AO3421

Symbol
t ≤ 10s Steady-State Steady-State
R θJL
7010090°C
Thermal Characteristics
Units Parameter
Typ Max V Units V W A
Maximum Junction-to-Ambient A Maximum Junction-to-Lead
°C/W
°C/W Maximum Junction-to-Ambient A D 6312580°C/W R θJA D
G
S
G
S
D
Symbol
Min Typ Max Units BV DSS -30
V
V DS =-30V, V GS =0V
-1T J =55°
C -5I GSS ±100
nA V GS(th)Gate Threshold Voltage -1.4-1.9
-2.4V I D(ON)
-20
A 77110T J =125°
C 100140125180
m Ω
g FS 5S V SD -0.8
-1V I S
-1.5
A C iss 197
240pF C oss 42pF C rss 2637pF R g
3.5
7.211.0ΩQ g (10V) 4.3
5.2nC Q g (4.5V) 2.23
nC Q gs 0.7nC Q gd 1.1nC t D(on)7.5
ns t r 4.1ns t D(off)11.8ns t f 3.8ns
t rr 11.314
ns Q rr
4.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I F =-2.6A, dI/dt=100A/µs
Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Turn-On DelayTime DYNAMIC PARAMETERS
Total Gate Charge V GS =-10V, V DS =-15V, I D =-2.6A
Gate Source Charge Gate Drain Charge V GS =-10V, V DS =-15V, R L =5.8Ω,
R GEN =3Ω
Total Gate Charge Gate resistance
V GS =0V, V DS =0V, f=1MHz
V GS =-10V, I D =-2.6A
Reverse Transfer Capacitance I S =-1A,V GS =0V
V DS =-5V, I D =-2.6A V GS =-4.5V, I D =-2A
Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance
Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions I DSS µA Drain-Source Breakdown Voltage On state drain current
I D =-250µA, V GS =0V V GS =-10V, V DS =-5V V DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current V DS =V GS I D =-250µA R DS(ON)Static Drain-Source On-Resistance
Diode Forward Voltage
I F =-2.6A, dI/dt=100A/µs
V GS =0V, V DS =-15V, f=1MHz SWITCHING PARAMETERS
Body Diode Reverse Recovery Time
m ΩForward Transconductance A. The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design.B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°
C. Ratings are based on low frequency and duty cycles to keep initialT J =25°C.
D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°
C. The SOA curve provides a single pulse ratin g.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-V GS (Volts)
Figure 2: Transfer Characteristics (Note E)
-I D (A )
-V DS (Volts)
Fig 1: On-Region Characteristics (Note E)
-I D (A )
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
2345
Q g (nC)
Figure 7: Gate-Charge Characteristics
-V G S (V o l t s )
5
10
15202530
-V DS (Volts)
Figure 8: Capacitance Characteristics C a p a c i t a n c e (p F )
Vds
Charge
Gate Charge Test Circuit & Waveform
Vdd
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
E = 1/2 LI AR AR
BV DSS
I AR
Vdd Vdd
Resistive Switching Test Circuit & Waveforms
90%
10%。