BD911中文资料

3 2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
IC = 10 A
IB = 2.5 A
VBE∗ Base-Emitter Voltage IC = 5 A
VCE = 4 V
hFE∗ DC Current Gain
IC = 0.5 A IC = 5 A IC = 10 A
VCE = 4 V VCE = 4 V VCE = 4 V
fT
Transition frequency IC = 0. 5 A
DC Current Gain (PNP type)
DC Transconductance(NPN type)
DC Transconductance(PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
0.49 0.61 1.14 1.14 4.95 2.4 10.0
13.0 2.65 15.25 6.2 3.5 3.75
TO-220 MECHANICAL DATA
mm TYP. 1.27
16.4
MAX. 4.60 1.32 2.72
0.70 0.88 1.70 1.70 5.15 2.7 10.40
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. .
6/6
5 5 1 1 1
1 3 2.5
1.5 250 150
Unit µA µA mA mA mA mA mA
V V
V V V
V
MHz
Safe Operating Area
Derating Curves
2/6
元器件交易网
DC Current Gain (NPN type)
BD909 / BD910 / BD911 / BD912
3/6
元器件交易网
BD909 / BD910 / BD911 / BD912
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
Transition Frequency (NPN type)
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0.027 0.034 0.067 0.067 0.203 0.106 0.409
0.551 0.116 0.620 0.260 0.154 0.151
P011/ BD910 / BD911 / BD912
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
Symbo l
Pa ram et e r
Test Conditions
ICBO
Collector Cut-off Current (IE = 0)
for BD909/910
for BD911/912 Tcase = 150 oC for BD909/910
for BD911/912
VCB = 80 V VCB = 100 V
VEBO Emitter-Base Voltage (IC = 0)
IE,IC Collector Current
IB
Base Current
Ptot Total Dissipation at Tc ≤ 25 oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
Transition Frequency (PNP type)
4/6
元器件交易网
DIM.
A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA.
BD909 / BD910 / BD911 / BD912
MIN. 4.40 1.23 2.40
For PNP types voltage and current values are negative.
October 1999
NPN PNP
Value
BD909
BD911
BD910
BD912
80
100
80
100
5
15
5
90
-65 to 150
150
Un it
V V V A A W oC oC
1/6
元器件交易网
BD909 / BD910 / BD911 / BD912
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.4
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
VCB = 80 V VCB = 100 V
ICEO
Collector Cut-off Current (IB = 0)
for BD909/910 for BD911/912
VCE = 40 V VCE = 50 V
IEBO Emitter Cut-off Current (IC = 0)
VCEO(s us)∗ Collector-Emitter Sustaining Voltage (IB = 0)
元器件交易网
BD909/911
®
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively.
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative.
VCE = 4 V
Min. Typ.
80 100
40 15 5 3
Max. 500 500
14.0 2.95 15.75 6.6 3.93 3.85
MIN. 0.173 0.048 0.094
0.019 0.024 0.044 0.044 0.194 0.094 0.393
0.511 0.104 0.600 0.244 0.137 0.147
inch TYP. 0.050
0.645
MAX. 0.181 0.051 0.107
VCE(sat)∗ Collector-Emitter Saturation Voltage