FMM60-02TF;中文规格书,Datasheet资料
FT-60R中文手册2005-7-20
简要说明FT-60R是一款双段单显FM手持收发信机。
它具有很小的尺寸，你可以带着它到任何地方。
原装的FNB-83镍氢电池可以为FT-60R在144MHz和430MHz业余段提供高达5W的输出功率。
FT-60R可以在VHF和UHF电视波段、VHF AM航空波段以及较宽的商业和公众安全频率内接收信号。
FT-60R具有EAI（Emergency Automatic ID，紧急自动身份）功能。
它将自动发送你的呼号并且开启麦克风，即使你不能按下PTT。
同时，FT-60R也提供了安全密码功能，只有在输入了密码后才能开机和操作。
随机品：FNB-83：7.2V，1400mAh可充电镍氢电池NC-88B/C*：整夜式充电器（10小时）背夹天线操作手册保修卡选件：FBA-25A：6节AA干电池盒CD-29B/C*：快速充电器（1.5小时）CN-3 ：BNC转SMA适配器CT-27：复制线CT-44：麦克风适配器E-DC-5B：DC线带点火器适配器E-DC-6：DC线MH-34B4B：扬声器/麦克风MH37A4B：耳机/麦克风VC-25 ：声控耳麦*：B-100~120V AC，C-230~240V AC1、天线座：连接随机天线或者其他阻抗50欧姆的天线。
2、音量/电源开关：顺时针旋转开机并增加音量，逆时针旋转降低音量并关机。
3、发射/忙指示灯：打开静噪时为绿色，发射时为红色。
4、拨动轮（DIAL）[内]：20位的选转开关，用来操作频率，同时也用来作为菜单的选择和其他调整。
5、静噪[外]：调整接收时的背景噪音，顺时针旋转到背景噪音刚好消失（绿色的忙指示灯熄灭）。
6、显示屏7、扬声器8、麦克风9、键盘FT-60R屏幕显示说明1、PTT2、监听3、夜灯4、麦克风/扬声器5、外接DC：6~16V。
：激活ARTS天线安装随机提供的天线在业余频段提供很好的效果，但是如果想在非业余段增强接收效果，需要另外安装与所需波段相匹配的天线。
MMPQ2222A;FFB2222A;中文规格书,Datasheet资料
ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 100 50 40
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2222A 300 2.4 415
FMM110-015X2F;中文规格书,Datasheet资料
© 2009 IXYS CORPORATION, All Rights ReservedN-Channel Power MOSFETPhase Leg TopologyDS100145(04/09)SymbolTest Conditions Characteristic Values Min. Typ. Max.C P Coupling Capacitance Between Shorted 40 pFPins and Mounting Tab in the Case d S ,d A Pin - Pin 1.7 mm d S ,d A Pin - Backside Metal 5.5mmWeight9gSymbol Test Conditions Maximum Ratings V DSS T J = 25°C to 175°C150 V V DGR T J = 25°C to 175°C, R GS = 1M Ω 150VV GSM Transient ± 30 V I D25T C = 25°C53A I DM T C = 25°C, Pulse Width Limited by T JM 300 AI A T C = 25°C 55AE AS T C = 25°C800 mJ dV/dtI S ≤ I DM , V DD ≤ V DSS ,T J ≤ 175°C10 V/ns P D T C = 25°C180WSymbol Test Conditions Maximum RatingsTJ-55 ... +175°C T JM 175°C T stg -55 ... +175°C V ISOLD 50/60H Z , RMS, t = 1min, Leads-to-Tab2500~V T L1.6mm (0.062 in.) from Case for 10s 300°C T SOLD Plastic Body for 10s 260°C F CMounting Force20..120 / 4.5..27N/lb.DSSI D25= 53A R DS(on)≤ 20m Ωt rr(typ)= 85nsISOPLUS i4-Pak TM15FeatureszSilicon Chip on Direct-Copper Bond (DCB) Substrate- UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Avalanche Rated z Low Q Gz Low Drain-to-Tab Capacitance zLow Package InductanceAdvantagesz Easy to Mount zSpace SavingszHigh Power DensityApplicationsz DC-DC Converters zBattery ChargerszSwitched-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor DriveszUninterruptible Power Supplies zHigh Speed Power Switching ApplicationsSource-Drain Diode Characteristic ValuesT = 25°C Unless Otherwise Specified)Note 1: Pulse Test, t≤ 300μs, Duty Cycle, d ≤ 2 %.ADVANCE TECHNICAL INFORMATIONThe product presented herein is under development. The Technical Specifications offered arederived from a subjective evaluation of the design, based upon prior knowledge and experience,and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the rightto change limits, test conditions, and dimensions without notice.IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.IXYS MOSFETs and IGBTs are covered4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,5857,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,0725,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405 B26,759,6927,063,975 B24,881,1065,034,7965,187,1175,486,7156,306,728 B16,583,5056,710,4636,771,478 B27,071,537© 2009 IXYS CORPORATION, All Rights ReservedIXYS REF: F_110N15T2(61)4-23-09-A© 2009 IXYS CORPORATION, All Rights ReservedIXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.IXYS REF: F_110N15T2(61)4-23-09-A分销商库存信息: IXYSFMM110-015X2F。
DTU60N02规格书(最新版)
1N-Channel 20-V (D-S) 175 °C MOSFETFEATURES•TrenchFET ® Power MOSFET •175 °C Junction Temperature •100 % R g Tested •100 % UIS TestedAPPLICATIONS•OR-ingPRODUCT SUMMARYV (BR)DSS (V)r DS(on) (Ω)I D (A)a 200.0051 at V GS = 4.5 V 600.0078 at V GS = 2.5 V60Notes:a.Package limited.b.Duty cycle ≤1 %.c.See SOA curve for voltage derating.d.When mounted on 1" square PCB (FR-4 material).ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise notedParameterSymbol Limit Unit Drain-Source Voltage V DS 20VGate-Source VoltageV GS± 12Continuous Drain Current (T J = 175 °C)T C = 25 °C I D 60a AT C = 100 °C60a Pulsed Drain CurrentI DM120Single Pulse Avalanche Current L = 0.1 mH I AS 50Single Pulse Avalanche Energy E AS 125mJ Maximum Power DissipationbT C= 25 °C P D 120c W T A = 25 °C d3.75Operating Junction and Storage T emperature RangeT J , T stg- 55 to 175°CTHERMAL RESISTANCE RATINGSParameterSymbol Limit Unit Junction-to-Ambient (PCB Mount)d R thJA 40°C/WJunction-to-CaseR thJC1.25•Typical ESD Protection 4000 VTO-252G D STop View２３５５３Ｑ６８８７２黄Ｒ１３７６０３２电５０７０2Notes:a.Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %b.Independent of operating temperature.c.Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min. Typ.Max.UnitStaticDrain-Source Breakdown Voltage V (BR)DSS V DS = 0 V , I D = 250 µA 20V Gate-Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 0.82Gate-Body LeakageI GSS V DS = 0 V, V GS = ± 8 V ± 10u AZero Gate Voltage Drain Current I DSS V DS = 20 V , V GS = 0 V 1µA V DS = 20 V , V GS = 0 V , T J = 125 °C 50V DS = 20 V , V GS = 0 V , T J = 175 °C250On-State Drain Current aI D(on)V DS ≥ 5 V , V GS = 10 V 100A Drain-Source On-State Resistance ar DS(on)V GS = 4.5 V, I D = 20 A0.00310.0051ΩV GS = 4.5 V, I D = 20 A, T J = 125 °C 0.0058V GS = 4.5 V, I D = 20 A, T J = 175 °C0.007V GS = 2.5 V, I D = 20 A0.00720.0078Forward T ransconductance a g fsV DS = 10 V , I D = 20 A95S Dynamic bInput Capacitance C iss V GS = 0 V , V DS = 10 V , f = 1 MHz5950pFOutput CapacitanceC oss 985Reverse Transfer Capacitance C rss 365Total Gate Charge b Q g V DS = 10 V , V GS = 4.5 V , ID = 50 A 3350nC Gate-Source Charge b Q gs 18Gate-Drain Charge b Q gd 7Gate Resistance R g 0.751.52.3ΩTurn-On Delay Time b t d(on) V DD = 10 V, R L = 0.2 Ω I D ≅ 50 A, V GEN = 4.5 V, R g = 1.0Ω1525ns Rise Time bt r 711Turn-Off Delay Time b t d(off) 3555Fall Time bt f 812Source-Drain Diode Ratings and Characteristics T C = 25°C cContinuous Current I S 60A Pulsed Current I SM 100Forward Voltage a V SD I F = 20 A, V GS = 0 V0.85 1.5V Reverse Recovery Time t rr I F = 20 A, di/dt = 100 A/µs 4590ns Peak Reverse Recovery Current I RM 1.7 3.4A Reverse Recovery ChargeQ rr0.0390.155µC3On-Resistance vs. Gate-to-Source VoltageTransfer CharacteristicsCapacitance4TYPICAL CHARACTERISTICS 25°C, unless otherwise notedGate ChargeSource-Drain Diode Forward VoltageTypical Drain-Source Brakdown Voltagevs. Junction TemperatureOn-Resistance vs. Junction TemperatureThreshold VoltageSingle Pulse Avalanche Current vs. TimeTYPICAL CHARACTERISTICS 25°C, unless otherwise notedNormalized Thermal Transient Impedance, Junction-to-Case51TO-252AA CASE OUTLINENote•Dimension L3 is for reference only.MILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A 2.18 2.380.0860.094A1-0.127-0.005b 0.640.880.0250.035b20.76 1.140.0300.045b3 4.95 5.460.1950.215C 0.460.610.0180.024C20.460.890.0180.035D 5.97 6.220.2350.245D1 5.21-0.205-E 6.35 6.730.2500.265E1 4.32-0.170-H 9.4010.410.3700.410e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.780.0550.070L30.89 1.270.0350.050L4- 1.02-0.040L51.141.520.0450.060ECN: X12-0247-Rev. M, 24-Dec-12DWG: 53471A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR DPAK (TO-252)。
KTM0602Q_Module_Datasheet_V0.3
Parameter Current POUT=16dBm Consumption POUT=0dBm Standby Current
Typ 100 60 5
Max 10
Units mA mA μA
Table 3: FM Transmitter Characteristics (Unless otherwise noted Ta = -30~70℃, AVDD= 2.2V to 3.6V) Parameter Symbol Test/Operating Min Typ Condition RF Frequency Range Ftx KTM0602Q 160 Audio Dynamic Range1,2,3 DR A-weighted 100 Total Harmonic Distortion1,2,3 THD Vin = 1 Vp-p 0.3 Audio Input Swing Vin Audio Input Resistance Rin 5 Audio Frequency Response Fin Within 3dB 20 RF Output Impedance Rout 50 Maximum Transmit Power Pout 10 Spurious Emission Pout Channel Step Resolution STEP 25 Pilot frequency 24MHz crystal 30 24.576MHz crystal 30.72 Pilot Deviation 2.5 Maximum Frequency Deviation Pre-emphasis Time Constant Tpre PHTCNST = 1 75 Crystal CLK Input clock 24/ 24.576 2-wire I2C Clock SCL 50 Notes: 1. FMOD=1KHz 2. △F=50KHz 3. VEMF=1mV, Frequency=160MHz~270MHz
CM602-L中文资料
4. 在使用时，请详细了解本设备及软件的规格和限制后再进行。由于错误操作所导致的损害，本公司 概不承担任何责任。
5. 本资料所记载的产品（或技术）如果符合外汇或国际贸易法所规定的限制货物（或限制技术），从 日本出口（或提供技术）时，需按照本条例获得出口许可（或劳务交易许可）。
Ver. 2007.0725
P. 52, 68
膜厚计量规的追加
Ver. 2007.0820 Ver. 2008.0115
Ver. 2008.0215 Ver. 2008.0915 Ver. 2008.1215
P. 9, 15
P. 61, 68, 69, 71, 73, 74
P. 21, 61, 70, 74 P.9, 34, 39, 40
4. 机器构成 ................................................................................................................... 2
4.1 贴装头构成 .................................................................................................................... 2 4.2 贴装吸嘴种类和构成 ...................................................................................................... 2 4.3 识别单元构成................................................................................................................. 2 4.4 供给部的构成................................................................................................................. 2
F960中英文规格书
Product pictures:产品图片批准/日期深圳市永興輝實業發展有限公司Shenzhen YXH Industry Development Co.，Ltd编号:YXH-SPE-CE-3008版本:00/00日期:2009-7-03F960产品规格书地址:广东省深圳市龙岗区中心城五联社区连心路五联工业区桑格电子电话:0755-********Customer Approval:客户承认SpecificationProduct model：F960产品型号：F960Customer Model：客户型号：传真:0755-********编制/日期审核/日期F960锂离子电池规格说明书F960 Li-ion Battery specification1.范围 Range1.1 这份说明书适用于可充电的F960锂离子电池. This specification apply to rechargeable li-ion battery F9601.2 这份说明书仅适用于F960的电池 This specification only fit for F960 Battery2.种类型号 Type&model2.1 种类 Type锂离子可充电电池 Li-ion Rechargeable battery2.2 型号 modelSG-DVBT008-F960为公司型号 SG-DVBT008-F960 Company model3.规格 specification3.1 电芯18650规格 Battery Cell 18650 Specification数值C riteria 单位Units 单位U nits 数值C riteria单位Units单位U nits4.325-4.375伏（V）微安（uA）4.10-4.20伏（V）毫欧（m Ω）2.2-2.4伏（V）安（A）0.3-0.5毫秒（mS）KW76AABU1U211-153.2.7过流保护电流Over-currentprotection current数值C riteria 电性能参数 electrical property parameter项目Item 50-653.2.6内阻Conduction resistance 3.2.5自耗电流 self-consuming current项目I tem项目Item数值C riteria29-403.2.2过充恢复电压Over-chargeresuming voltage 3.2.3过放保护电压Over-discharge protection Voltage 3.2.8识别电阻（T） 识别电阻（D）锂电保护IC开关MOS管8205(SOP8)Picture and dimension3.3 F960 外壳规格 F960 Specification of shell3.1.14 外表标示 apperance marking ICR 18650目视 visual3.2.4短路保护延时间Short circuit protection delay外型尺寸3.2 F960 PCB板的规格 F960 PCB SpecificationMain chip application3.2.1过充保护电压Over-chargeProtection Voltage ItemTesting condition项目I tem 备注:1C=2100mAhThickness:1.9mm正负公差:0.1mm标 准 standard测试条件 Test condition3.4.1 标称电压 nominal voltage 6450mAh3.3.1 面3.4 F960成品规格 F960 finished-product Specification高精度数显卡尺high-precision callipers3.3.3 组合高精度数显卡尺high-precision callipers内阻仪 BVIR ≥6300mAh 典型6450mAhtypical 6450mAh高精度数显卡尺high-precision callipers 3.3.2 底5.5V 7.8V±0.1V ﹤86m Ω规 格 Specification 项目 item8.5V 3.4.7 出厂内阻 routine internal resistance 3.4.8 重量 weight3.4.9 外尺寸 outside dimension293g70.4*38.5*59.7mm分容老化柜 grading andaging cabinet 高精度万用表high precision digitalmultimeter天秤 Libra 3.4.6 出厂电压 routine voltage 7.2V3.4.2 标称容量 nominal capacity 高精度数显卡尺high-precision callipers3.4.3 实际容量 practical capacity 3.4.4 充电终止电压 final charging voltage3.4.5 放电终止电压final discharging voltage正负公差:0.1mm正负公差:0.1mm长宽公差:±0.1mm 厚度公差:±0.05mm4. 电池船运条件及保质期限 The shipping conditions and warranty4.1 船运条件:大约20-30%容量.4.2 保质期限:从电池生产完成日开始的12个月内.5. 电池使用时警告及注意事项：WARNINGS AND CAUTIONS IN HANDING THE LITHIUM-IONBATTERY警告warningA、危险警告： Danger warningDanger warning should be described in manual or instruction for users为防止电池可能发生泄漏，发热，爆炸，请注意以下预防措施：To prevent the possibility of the battery from leaking,heating, explosion please observe the following precautions:with metal objects such wirehairpins etcB、注意以下项目* 不要加热和扔进火中.Do not heat or expose charger to fire.* 禁止拆开电池及改变电池内部结构Do not open the battery and change the internal structure* 不要装配或遗留在高温(超过60℃)设备中.Do not assemble or leave it in the hightemperature equipment (≥60℃）* 不要用金属直接短接电池正极和负极终端.Do not use metal directly contacting battery positive and negative poles* 不要湿水,受潮.Keep away from water ; Dampproof充电注意chargering attention* 充电温度限制在 0℃至 +45℃.chargering temperature limited between 0℃ and +45℃.* 不要反充和未充电就进行过放电.Do not over discharge before* 最好的充电是按电池专门设计方式进行.The best charging way is according the battery special designed way* 充电时用制造厂指定的设备并遵循正确使用方法;When charging,using the appointed machine of factory and following thecorrect using way.放电注意Dischargering Attention* 放电温度限制在-20℃至 +60℃.discharging temperature limited between 20℃ and +60℃* 避免放电至2.5V以下, 不要过放电至1.0V以下.Avoid discharging below 2.5V,do not over discharger below1.0 V* 以规格书指定的电流放电并遵循环境温度.Following as specification appointed current dischargeand environmental temperature贮存注意Storage Attention* 贮存一个较长时期后要完全充放不少于三个循环.After storing for a long time,need fully charge anddischarge not less than three cycles.* 贮存在干燥和室温条件.Store at the dry and indoor condition* 贮存时电池带电量不多于30%.The battery with quantity ofelectricity less than 30% when storing.C、小心Carefulness引起电池过热，起火或功能失效，寿命减短。
EMF6T2R;中文规格书,Datasheet资料
TransistorsRev.A 1/5Power management (dual transistors)EMF62SA2018 and 2SK3019 are housed independently in a EMT6 package.z ApplicationPower management circuitz Features1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.z StructureSilicon epitaxial planar transistorz Equivalent circuitsz Packaging specificationsEMF6EMT6F6T2R 8000Type Package Marking CodeBasic ordering unit (pieces)z Dimensions (Units : mm) 0.221.21.6(1)(2)(5)(3)(6)(4)0.130.50.50.51.01.6ROHM : EMT6Abbreviated symbol : F6Each lead has same dimensionsTransistorsRev.A 2/5z Absolute maximum ratings (T a=25°C) Tr1ParameterSymbolV CBOV CEOV EBOI CI CPP C Tj Tstg Limits −15−12−6−500150(TOTAL)150−55 to +150−1.0∗1∗2Unit V V V mA A mW °C °CCollector-base voltage Collector-emitter voltage Emitter-base voltageCollector currentPower dissipationJunction temperatureRange of storage temperature ∗1 Single pulse P W =1ms∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.Tr2Parameter∗1 PW ≤10ms Duty cycle ≤50%∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.Symbol V DSS V GSS I D I DRP P DTch Tstg Limits 30±20100200150(TOTAL)150−55 to +150∗1∗1∗2UnitV V mA I DP 200mA mA I DR 100mA mW °C °CDrain-source voltageGate-source voltageDrain currentReverse draincurrent Total power dissipation Channel temperatureRange of storage temperature ContinuousContinuous PulsedPulsedz Electrical characteristics (T a=25°C) Tr1ParameterSymbol Min.Typ.Max.Unit ConditionsV CB =−10V, I E =0mA, f =1MHzTransition frequencyf T −260−MHz V CE =−2V, I E =10mA, f =100MHz BV CEO −12−−V I C =−1mA Collector-emitter breakdown voltage BV CBO −15−−V I C =−10µA Collector-base breakdown voltage BV EBO −6−−V I E =−10µA Emitter-base breakdown voltage I CBO −−−100nA V CB =−15V Collector cut-off current I EBO −−−100nA V EB =−6VEmitter cut-off currentV CE(sat)−−100−250mV I C =−200mA, I B =−10mA Collector-emitter saturation voltage h FE 270−680−V CE =−2V, I C =−10mADC current gainCob − 6.5−pFCollector output capacitanceTransistorsRev.A 3/5zElectrical characteristic curves Tr1BASE TO EMITTER VOLTAGE : V BE (V)C O L L E C T O R C U R R E N T : I C (m A )Fig.1 Grounded emitter propagationcharacteristicsCOLLECTOR CURRENT : I C (mA)D C C U R R E N T G A I N : h F EFig.2 DC current gain vs.collector currentCOLLECTOR CURRENT : I C (mA)C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (m V )Fig.3 Collector-emitter saturation voltagevs. collector current ( Ι )COLLECTOR CURRENT : I C (mA)C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (m V )Fig.4 Collector-emitter saturation voltagevs. collector current ( ΙΙ )COLLECTOR CURRENT : I C (mA)B A S E R S A T U R A T I O N V O L T A G E : V B E (s a t ) (m V )Fig.5 Base-emitter saturation voltagevs. collector currentEMITTER CURRENT : I E (mA)1T R A N S I T I O N F R E Q U E N C Y : f T (M H z )101000100Fig.6 Gain bandwidth productvs. emitter current1101001000C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (pF )EMITTER TO BASE VOLTAGE : V EB (V)Fig.7 Collector output capacitancevs. collector-base voltage Emitter input capacitance vs. emitter-base voltageTransistorsRev.A 4/5Tr2D R A I N C U R RE N T : I D (A )DRAIN-SOURCE VOLTAGE : V DS (V)Fig.9 Typical output characteristicsD R A I N C U R RE N T : I D (A )GATE-SOURCE VOLTAGE : V GS (V)Fig.10 Typical transfer characteristicsG A T E T H R E S H O L D V O L T A G E : V G S (t h ) (V )CHANNEL TEMPERATURE : Tch (°C)Fig.11 Gate threshold voltage vs.channel temperatureS T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (Ω)DRAIN CURRENT : I D (A)Fig.12 Static drain-source on-stateresistance vs. drain current ( Ι )S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (Ω)DRAIN CURRENT : I D (A)Fig.13 Static drain-source on-stateresistance vs. drain current ( ΙΙ )GATE-SOURCE VOLTAGE : V GS (V)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (Ω)Fig.14 Static drain-source on-stateresistance vs. gate-source voltageCHANNEL TEMPERATURE : Tch (°C)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (Ω)Fig.15 Static drain-source on-stateresistance vs. channel temperatureF O R W A R D T R A N S F E R A D M I T T A N C E : |Y f s | (S )DRAIN CURRENT : I D (A)Fig.16 Forward transfer admittance vs.drain currentR E V E R S E D R A I N C U R R E N T : I D R (A )SOURCE-DRAIN VOLTAGE : V SD (V)Fig.17 Reverse drain current vs.source-drain voltage ( Ι )TransistorsRev.A 5/5R E V E R S E D R A I N C U R R E N T : I D R (A )SOURCE-DRAIN VOLTAGE : V SD (V)Fig.18 Reverse drain current vs.source-drain voltage (ΙΙ )C A P A C I T A N C E : C (p F )DRAIN-SOURCE VOLTAGE : V DS (V)Fig.19 Typical capacitance vs.drain-source voltageS W I T H I N G T I M E : t (n s )DRAIN CURRENT : I D (mA)Fig.20 Switching characteristicsAppendix1-Rev2.0Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact your nearest sales office.ROHM Customer Support SystemTHE AMERICAS / EUROPE / ASIA / JAPANContact us : webmaster@rohm.co.jpAppendix分销商库存信息: ROHMEMF6T2R。
2SD2012(F,M);中文规格书,Datasheet资料
TOSHIBA Transistor Silicon NPN Triple Diffused Type2SD2012Audio Frequency Power Amplifier Applications• Low saturation voltage: V CE (sat) = 0.4 V (typ.) (I C = 2A / I B = 0.2A) • High power dissipation: P C = 25 W (Tc = 25°C)Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitCollector-base voltage V CBO 60 V Collector-emitter voltage V CEO 60 V Emitter-base voltage V EBO 7 V Collector current I C 3 A Base current I B 0.5 A Ta = 25°C 2.0 Collector powerdissipationTc = 25°CP C25WJunction temperature T j 150 °C Storage temperature rangeT stg−55 to 150°CNote 1: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Unit: mmJEDEC ― JEITA―TOSHIBA 2-10R1A Weight: 1.7 g (typ.)Electrical Characteristics (Ta = 25°C)Typ.Max UnitCondition Min Characteristics Symbol TestCollector cut-off current I CBO V CB = 60 V, I E = 0 ―― 100μA Emitter cut-off current I EBO V EB = 7 V, I C = 0 ―― 100μA Collector-emitter breakdown voltage V (BR) CEO I C = 50 mA, I B = 0 60 ―― Vh FE (1)V CE = 5 V, I C = 0.5 A 100 ― 320DC current gainh FE (2)V CE = 5 V, I C = 2 A 20 ――Collector-emitter saturation voltage V CE (sat)I C = 2 A, I B = 0.2 A ― 0.4 1.0 V Base-emitter voltage V BE V CE = 5 V, I C = 0.5 A ― 0.75 1.0 V Transition frequency f T V CE = 5 V, I C = 0.5 A ― 3 ― MHz Collector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz ― 35 ― pF MarkingD2012Note 2: A line under a Lot No. identifies the indication of product Labels.Not underlined: [[Pb]]/INCLUDES > MCVUnderlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHScompatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.Collector-emitter voltage V CE (V)I C – V CECo l le c t o r c u r r e n tI C (A )Collector current I C (A)h FE – ICD C c u r r e n t g a in h F ECollector current I C (A)V CE (sat) – I CC o l l e c t o r -e m i t t e r s a t u r a t io nv o l t a g e V C E (sa t ) (V )Base-emitter voltage V BE (V)I C – V BEC ol lect o rc u rr en tI C(A )Ambient temperature Ta (°C)P C – TaC o l l e c t o r p o w e r d i s s i p a t i o n P C (W )Collector-emitter voltage V CE (V)Safe Operating AreaC o l l e c t o r c u r r e n t I C (A )Pulse width t w (s)r th – t wT r a n s i e n t t h e r m a l r e s i s t a n c e r t h (°C /W )1 10 1000.10.010.001RESTRICTIONS ON PRODUCT USE•Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.•This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.•Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) theinstructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.•Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.•Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.•Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.•The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.•ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITYWHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.•Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. •Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.分销商库存信息: TOSHIBA2SD2012(F,M)。
FKPF12N60中文资料
FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80Electrical Characteristics T C =25°C unless otherwise notedNotes:1.Gate Open2.Measurement using the gate trigger characteristics measurement circuit3.The critical-rate of rise of the off-state commutating voltage is shown in the table below4.The contact thermal resistance R TH(c-f) in case of greasing is 0.5 °C/WQuadrant Definitions for a TriacSymbol ParameterTest ConditionMin.Typ.Max.Units I DRM Repetieive Peak Off-State Current V DRM applied--20µA V TMOn-State VoltageT C =25°C, I TM =17AInstantaneous measurement-- 1.5V V GTGate Trigger Voltage (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)-- 1.5V II T2(+), Gate (-)-- 1.5V IIIT2(-), Gate (-)-- 1.5V I GT Gate Trigger Current (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)--30mA II T2(+), Gate (-)--30mA IIIT2(-), Gate (-)--30mA V GD Gate Non-Trigger Voltage T J =125°C, V D =1/2V DRM 0.2--V I H Holding Current V D = 12V, I TM = 1A 50mA I L Latching Current I, III V D = 12V, I G = 1.2I GT 50mA II70mA dv/dt Critical Rate of Rise of Off-State VoltagV DRM = Rated, T j = 125°C,Exponential Rise300V/µs (dv/dt)CCritical-Rate of Rise of Off-State Commutating Voltage (Note 3)10--V/µsV DRM (V)Test ConditionCommutating voltage and current waveforms(inductive load)FKPF12N601. Junction Temperature T J =125°C2. Rate of decay of on-state commutating current (di/dt)C = - 6.0A/ms3. Peak off-state voltage V D = 400VFKPF12N80Supply VoltageMain CurrentMain VoltageTimeTimeTime V D(dv/dt)C(di/dt)CT2 Positive+-T2 NegativeQuadrant IIQuadrant IQuadrant IIIQuadrant IVI GT -+I GT(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。
BAT60JFILM;中文规格书,Datasheet资料
1/5January 2003-Ed:6ASMALL SIGNAL SCHOTTKY DIODESymbol ParameterValue Unit V RRM Repetitive peak reverse voltage10V I F Peak forward currentδ=0.113A I FSM Surge non repetitive forward current tp=10ms 5A P tot Power Dissipation Ta=25°C310mW T stg Storage temperature range-65to +150°C Tj Maximum operating junction temperature *150°C TL Maximum temperature for soldering during 10s260°CABSOLUTE RATINGS (limiting values)Symbol ParameterValue Unit R th (j-a)Junction to ambient (*)400°C/W(*)Mounted on epoxy board with recommended pad layout.THERMAL RESISTANCE *:dPtot dTj Rth j a <−1()thermal runaway condition for a diode on its own heatsinkBAT60JSTATIC ELECTRICAL CHARACTERISTICSSymbol Tests Conditions Tests conditions Min.Typ.Max.Unit V F*Forward voltage drop Tj=25°C I F=10mA0.280.32VI F=100mA0.350.40I F=1A0.530.58I R**Reverse leakage current Tj=25°C V R=5V13µATj=25°C V R=8V 1.34Tj=25°C V R=10V26Tj=25°C V R=12V 2.57.5Tj=80°C V R=8V73150Pulse test:*tp=380µs,δ<2%**tp=5ms,δ<2%To evaluate the conduction losses the following equation:P=0.38x I F(AV)+0.17I F2(RMS)2/5BAT60J3/50.00.10.20.30.40.50.60.70.000.050.100.150.200.250.300.35PF(av)(W)Fig. 1:Average forward power dissipation versus average forward current.2550751001251500.00.40.81.21.62.02.42.83.2IF(A)Fig. 2-1:Peak forward current versus ambient temperature (δ= 0.11).2550751001251500.000.050.100.150.200.250.300.350.400.450.500.550.60IF(av)(A)Fig. 2-2:Average forward current versus ambient temperature (δ= 0.5).1E-31E-21E-11E+0IM(A)Fig. 3:Non repetitive surge peak forward current versus overload duration (maximum values).1E-41E-31E-21E-11E+01E+11E+2Zth(j-a)/Rth(j-a)Fig.4:Relative variation of thermal impedance junc-tion to ambient versus pulse duration (Epoxy printed circuit board FR4with recommended pad layout).123456789101E-41E-31E-21E-1IR(mA)Fig.5:Reverse leackage current versus reverse voltage applied (typical values).BAT60J4/52550751001251501E-11E+01E+11E+21E+31E+41E+5IR[Tj] / IR[Tj=25°C]Fig.6:Reverse leackage current versus junction temperature (typical values).110C(pF)Fig.7:Junction capacitance versus reverse voltage applied (typical values).0.00.20.40.60.81.01.21.41.61.81E-1IFM(A)Fig.8-1:Forward voltage drop versus forward cur-rent (High level).0.00.10.20.30.40.50.60.70.80.00.10.20.30.40.50.60.70.80.91.0IFM(A)Fig.8-2:Forward voltage drop versus forward cur-rent (Low level).102030405060708090100100150200250300350400450500550600Rth(j-a) (°C/W)Fig.9:Thermal resistance junction to ambient ver-sus copper surface (epoxy printed circuit board FR4,copper thickness:35µm).BAT60J5/5Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics ©2003STMicroelectronics -Printed in Italy -All rights reserved.STMicroelectronics GROUP OF COMPANIESAustralia -Brazil -Canada -China -Finland -France -GermanyHong Kong -India -Israel -Italy -Japan -Malaysia -Malta -Morocco -SingaporeSpain -Sweden -Switzerland -United Kingdom -United States.PACKAGE MECHANICAL DATA SOD-323Type Marking Package Weight Base qty Delivery mode BAT60JFILM60SOD-3230.005g.3000Tape &reelsEpoxy meets UL94V-0MARKING分销商库存信息: STMBAT60JFILM。
22-16-2090;中文规格书,Datasheet资料
Assy Proc: Hooks Cut: Housing No: Terminal No: Dim C: Plating: Packaging: Voids: Material No
22-14-2024 22-14-2034 22-14-2044 22-14-2054 22-14-2064 22-14-2074 22-14-2084 22-14-2094 22-14-2104 22-14-2114 22-14-2124 22-14-2134 22-14-2144 22-14-2154 22-14-2164 22-14-2174 22-14-2184 22-14-2194 22-14-2204 22-14-2214 22-14-2224 22-14-2234 22-14-2244 22-14-2254
/
KK 100 PCB ASSY 2-25 CKT
4455 SERIES
A-4455- *
ASSY PROCEDURE A=RIGHT ANGLE B=BOTTOM ENTRY C=TOP ENTRY
STANDARD PRODUCT
*
N
*
*-*
HOUSING TYPE A=4455-AN B=4455-BN E=4455-NHH H=4455-N2 P=4455-NR (HOOKS CUT OFF) R=4455-NR W=4455-N-2 (HOOKS CUT OFF) Y=4455-N (HOOKS CUT OFF) Z=4455-N NO OF CIRCUITS TERMINAL TYPE Code A B C D F G J L M T Number 4316-4 6516-4 6516-5C 4316-3B 6516-6C 4316-3 6516-3B 6516-3C 6516-4A 4316-4A Material Brass Phos Bronze Phos Bronze Brass Phos Bronze Brass Phos Bronze Phos Bronze Phos Bronze Brass Form Standard Standard Cat Ear / V Std / V Cat Ear / V Standard Std / V Cat Ear / V Cat Ear Cat Ear VOID LOCATION NUMBER = CIRCUIT VOIDED MULTIPLE VOIDS START WITH 51 BLANK = NONE
ECMF02-2AMX6;中文规格书,Datasheet资料
June 2011Doc ID 17815 Rev 21/15ECMF02-2AMX6Common mode filter with ESD protection for USB 2.0 and MIPI D-PHY/MDDI interfaceFeatures■Very large differential bandwidth > 6 GHz ■High common mode attenuation:–-34 dB at 900 MHz–-20 dB between 800 MHz and 2.2 GHz ■Very low PCB space consumption ■Thin package: 0.55 mm max ■Lead-free package■High reduction of parasitic elements through integrationComplies with the following standards:■IEC 61000-4-2 level 4 input and output pins:–±15 kV (air discharge)–±8 kV (contact discharge)Applications■Mobile phones ■Notebook, laptop ■Portable devices ■PNDDescriptionThe ECMF02-2AMX6 is a highly integrated common mode filter designed to suppress EMI/RFI common mode noise on high speed differential serial buses like MIPI D-PHY , MDDI or USB 2.0.The ECMF02-2AMX6 can protect and filter one differential lane.Characteristics ECMF02-2AMX62/15Doc ID 17815 Rev 21 CharacteristicsCompliant with USB 2.0 high speed sync field test (150 mV diff).Table 1.Absolute maximum ratings (T amb = 25 °C)Symbol ParameterValue Unit V PP Peak pulse voltage (1)IEC 61000-4-2 contact discharge IEC 61000-4-2 air discharge820kV I DC Maximum DC current 200mA T op Operating temperature -40 to +85°C T j Maximum junction temperature 125°C T stgStorage temperature range- 55 to +150°C1.Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353.Table 2.Electrical characteristics (values, T amb = 25 °C)Symbol Test conditionsMin.Typ.MaxUnit V BR I R = 1 mA6V I RM V RM = 1.5 V per line 100nA R DCDC serial resistance1.82.5ΩECMF02-2AMX6CharacteristicsDoc ID 17815 Rev 23/15Figure 7.SCC21 common mode attenuation measurements (Z= 45 Ω)Figure 3.SDD21 differential attenuation measurements (Z 0 diff = 100 Ω)Figure 4.SCC21 common mode attenuation measurements Figure 5.SDD11 / SDD22 differential returnloss measurements Figure 6.SDD21 differential attenuation measurements (Z 0 diff = 90 Ω)CharacteristicsECMF02-2AMX64/15Doc ID 17815 Rev 2Figure 10.MIPI D-PHY low power mode test setupFigure 11.Low power pulse response - see Figure 10 for test setupFigure 8.ESD response to IEC 61000-4-2 Figure 9.ESD response to IEC 61000-4-2PIN 6PIN 520V/Div20 ns/Div50V/Div 20 ns/DivC2C382.3V 112VPIN 6-71.1V-115VPIN 520V/Div20 ns/Div50V/Div 20 ns/DivC2C3500 mV/div500 mV/div200 ns/div200 ns/divPulse:50 ns,t r = t f = 5 nsECMF02-2AMX6CharacteristicsFigure B 2.0 HSync measurement result200 mV/Div200 mV/Div 5 ns/Div5 ns/DivFigure B 2.0 eye diagram, mask T10.2V/div342.2ps/divDoc ID 17815 Rev 25/15Application schematics ECMF02-2AMX66/15Doc ID 17815 Rev 22 Application schematicsFigure 15.MIPI D-PHYECMF04-4AMX12ECMF02-2AMX6ECMF02-2AMX6Application schematicsDoc ID 17815 Rev 27/15Ordering information scheme ECMF02-2AMX6 3 Ordering information scheme8/15Doc ID 17815 Rev 2ECMF02-2AMX6Package informationDoc ID 17815 Rev 29/154 Package information●Epoxy meets UL94, V0●Lead-free packagesIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: . ECOPACK ® is an ST trademark.Note:Product marking may be rotated by 90° for assembly plant differentiation. In no case should this product marking be used to orient the component for its placement on a PCB. Only pin 1 mark is to be used for this purpose.Package information ECMF02-2AMX610/15Doc ID 17815 Rev 2分销商库存信息: STMECMF02-2AMX6。
60HQ100;60HQ080;60HQ060;中文规格书,Datasheet资料
Major Ratings and Characteristics TO-203AB (DO-5)SCHOTTKY RECTIFIER60 Amp60HQ... SERIESBulletin PD-2.055 rev. E 11/0260HQ... Series2Bulletin PD-2.055 rev. E 11/02I F(AV)Max. Average Forward Current60A50% duty cycle @ T C = 118 °C, rectangular wave form * See Fig. 5I FSM Max. Peak One Cycle Non-Repetitive 84005µs Sine or 3µs Rect. pulse Surge Current * See Fig. 7120010ms Sine or 6ms Rect. pulseE AS Non-Repetitive A valanche E nergy 15mJ T J = 25 °C, I AS = 1 Amps, L = 30 mH I ARRepetitive A valanche C urrent1ACurrent decaying linearly to zero in 1 µsec Frequency limited by T J max. V A = 1.5 x V R typicalParameters60HQ UnitsConditionsAbsolute Maximum RatingsV FMMax. Forward Voltage Drop (1)0.89V @ 60A * See Fig. 11.09V @ 120A 0.70V @ 60A 0.84V @ 120A I RM Max. Reverse Leakage Current (1) 1.5mA T J = 25 °C * See Fig. 220mA T J = 125 °CC T Max. Junction Capacitance 1400pF V R = 5V DC , (test signal range 100Khz to 1Mhz) 25 °C L STypical Series Inductance7.5nH Measured from top of terminal to mounting planedv/dt Max. Voltage Rate of Change10000V/ µs(Rated V R )T J = 25 °C T J = 125 °C V R = rated V RElectrical SpecificationsParameters60HQUnitsConditions(1) Pulse Width < 300µs, Duty Cycle < 2%T J Max. Junction Temperature Range -65 to 175°C T stgMax. Storage Temperature Range-65 to 175°C R thJC Max. Thermal Resistance Junction0.83°C/W DC o peration * See Fig. 4to Case R thCS Typical Thermal Resistance, Case to0.25°C/WMounting surface , smooth and greasedHeatsink wt Approximate Weight 15 (0.53)g (oz.)TMounting T orque Min.23 (20)Non-lubricated t hreads Max.46 (40)Case S tyleDO-203AB(DO-5)JEDECKg-cm (Ibf-in)Thermal-Mechanical SpecificationsParameters60HQUnitsConditionsA Following any rated load condition andwith rated V RRM appliedPart number60HQ06060HQ08060HQ09060HQ100V RMax. DC Reverse Voltage (V)V RWM Max. Working Peak Reverse Voltage (V)608090100Voltage Ratings60HQ... Series360HQ... Series4Bulletin PD-2.055 rev. E 11/02Fig. 8 - Unclamped Inductive Test CircuitFig. 5 - Maximum Allowable Case Temperature Vs. Average Forward CurrentFig. 6 - Forward Power Loss CharacteristicsFig. 7 - Maximum Non-Repetitive Surge CurrentFREE-WHEEL DIODE 40HFL40S02CURRENT MONITORHIGH-SPEEDSWITCH IRFP460LDUT Rg = 25 ohmVd = 25 Volt+120130140150160170180020*********A l l o w a b l e C a s e T e m p e r a t u r e - (°C )F(AV)Average Forward Current - I (A)01020304050600102030405060708090A v e r a g e P o w e r L o s s - (W a t t s )F(AV)Average Forward Current - I (A)10001000010100100010000FS M pN o n -R e p e t i t i v e S u r g e C u r r e n t - I (A )Square Wave Pulse Duration - t (microsec)60HQ... Series5Bulletin PD-2.055 rev. E 11/02 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7309Visit us at for sales contact information. 11/02Data and specifications subject to change without notice.This product has been designed for Industrial Level.Qualification Standards can be found on IR's Web site.分销商库存信息:VISHAY60HQ10060HQ08060HQ060。
士兰微电子 SVF2N60CN NF M MJ F D 说明书 2A、600V N沟道增强型场效应管
2A、600V N沟道增强型场效应管描述SVF2N60CN/NF/M/MJ/F/D N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-Cell TM平面高压VDMOS工艺技术制造。
先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。
该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。
特点♦2A，600V，R DS(on)(典型值)=3.7Ω@V GS=10V♦低栅极电荷量♦低反向传输电容♦开关速度快♦提升了dv/dt 能力命名规则士兰F-Cell工艺VDMOS产品标识额定电流标识,采用1-2位数字；例如:4 代表 4A,10 代表 10A, 08 代表 0.8A额定耐压值，采用2位数字例如：60表示600V,65表示650V封装外形标识例如：N:TO-126; NF:TO-126F;M:TO-251D; MJ:TO-251J;F:TO-220F; D:TO-252;S V F X N E X X C X沟道极性标识，N代表N 沟道特殊功能、规格标识，通常省略例如：E 表示内置了ESD保护结构版本产品规格分类产 品 名 称 封装形式 打印名称 材料 包装形式 SVF2N60CN TO-126-3L SVF2N60CN 无铅料管SVF2N60CN TO-126-3L SVF2N60CN 无铅袋装SVF2N60CNF TO-126F-3L SVF2N60CNF 无铅料管SVF2N60CM TO-251D-3L SVF2N60C 无卤料管SVF2N60CMJ TO-251J-3L SVF2N60C 无卤料管SVF2N60CF TO-220F-3L SVF2N60CF 无铅料管SVF2N60CD TO-252-2L SVF2N60CD 无卤料管SVF2N60CDTR TO-252-2L SVF2N60CD 无卤编带极限参数(除非特殊说明，TC=25°C)参 数 名 称 符号参数范围单位 SVF2N60CNSVF2N60CNFSVF2N60CM/DSVF2N60CMJSVF2N60CF漏源电压V DS600 V 栅源电压V GS±30 V漏极电流T C=25°CI D2.0A T C=100°C 1.3漏极脉冲电流I DM8.0 A耗散功率(T C=25°C)- 大于25°C每摄氏度减少P D30 16 34 35 23 W0.24 0.13 0.27 0.28 0.18 W/°C单脉冲雪崩能量(注1) E AS115 mJ 工作结温范围T J-55～+150 °C 贮存温度范围T stg-55～+150 °C热阻特性参数名称符号参数范围单位SVF2N60CNSVF2N60CNFSVF2N60CM/DSVF2N60CMJSVF2N60CF芯片对管壳热阻RθJC 4.17 7.81 3.7 3.57 5.56 °C/W 芯片对环境的热阻RθJA62.5 120 62.0 62.0 62.5 °C/W电性参数(除非特殊说明，TC=25°C)参 数 符 号 测试条件 最小值 典型值 最大值 单位 漏源击穿电压B VDSS V GS=0V，I D=250µA 600 -- -- V漏源漏电流I DSS V DS=600V，V GS=0V -- -- 1.0 µA栅源漏电流I GSS V GS=±30V，V DS=0V -- -- ±100 nA栅极开启电压V GS(th)V GS= V DS，I D=250µA 2.0 -- 4.0 V导通电阻R DS(on)V GS=10V，I D=1.0A -- 3.7 4.2 Ω输入电容C issV DS=25V，V GS=0V，f=1.0MHz 179 233 303pF输出电容C oss-- 32 -- 反向传输电容C rss-- 2.8 --开启延迟时间t d(on)V DD=300V，I D=2.0A，R G=25Ω(注2，3) -- 8.9 --ns开启上升时间t r-- 23.0 -- 关断延迟时间t d(off)-- 23.4 -- 关断下降时间t f-- 24.9 --栅极电荷量Q gV DS=480V，I D=2.0A，V GS=10V(注2，3) -- 8.24 --nC栅极-源极电荷量Q gs-- 1.64 -- 栅极-漏极电荷量Q gd-- 4.44 --源-漏二极管特性参数参 数符号 测试条件最小值 典型值 最大值 单位 源极电流 I S MOS 管中源极、漏极构成的反偏P-N 结-- -- 2.0 A 源极脉冲电流 I SM -- -- 8.0 源-漏二极管压降 V SD I S =2.0A ，V GS =0V -- -- 1.4 V 反向恢复时间 T rr I S =2.0A ，V GS =0V ， dI F /dt=100A/µS-- 326 -- ns 反向恢复电荷 Q rr--0.87--µC注：1. L=30mH ，I AS =2.52A ，V DD =100V ，R G =25Ω，开始温度 T J =25°C ； 2. 脉冲测试： 脉冲宽度≤300μs ，占空比≤2%；3. 基本上不受工作温度的影响。
深圳亚特尔 M60-2M 电机保护器 中文说明书
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© 2008 IXYS CORPORATION, All rights reserved
N-Channel Power MOSFET
Phase Leg Topology
DS100048(09/08)
Symbol
Test Conditions Characteristic Values Min. Typ. Max.
C P Coupling capacitance between shorted 40 pF
pins and mounting tab in the case d S ,d A pin - pin 1.7 mm d S ,d A pin - backside metal 5.5
mm
Weight
9
g
Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C
200 V V DGR T J = 25°C to 150°C, R GS = 1M Ω 200
V
V GSM Transient ± 30 V I D25T C = 25°C
33A I DM T C = 25°C, pulse width limited by T JM 150 A
I A T C = 25°C 5 A E AS T C = 25°C
1
J
dV/dt
I S ≤ I DM , V DD ≤ V DSS ,T J ≤ 150°C
10 V/ns P D T C = 25°C
125
W
Symbol Test Conditions Maximum Ratings
T J
-55 ... +150°C T JM 150°C T stg -55 ... +150
°C V ISOLD 50/60H Z , RMS, t = 1min, leads-to-tab 2500~V T L
1.6mm (0.062 in.) from case for 10s 300°C T SOLD Plastic body for 10s 260°C F C
Mounting force
20..120 / 4.5..27
N/lb.
DSS
I D25
= 33A R DS(on)≤ 40m Ωt rr(typ)
= 82ns
Features
z
Silicon chip on Direct-Copper Bond (DCB) substrate
- UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z Low Q G
z Low Drain-to-Tab capacitance z
Low package inductance
Advantages
z Low gate drive requirement z High power density z Fast intrinsic rectifier
z Low drain to ground capacitance z
Fast switching
Applications
z DC and AC motor drives
z UPS, solar and wind power inverters z Synchronous rectifiers
z Multi-phase DC to DC converters z Industrial battery chargers z
Switching power supplies
ISOPLUS i4-Pak TM
1
5
Source-Drain Diode Characteristic Values
T = 25°C unless otherwise specified)
Note 1: Pulse test, t≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,5857,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,0725,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405 B26,759,6927,063,975 B2
4,881,1065,034,7965,187,1175,486,7156,306,728 B16,583,5056,710,4636,771,478 B27,071,537
分销商库存信息: IXYS
FMM60-02TF。