AOD468

Symbol R θJA R θCS R θJC

Maximum Case-to-sink

A

Maximum Junction-to-Case

D,F

°C/W

°C/W 0.7

0.51

Absolute Maximum Ratings T =25°C unless otherwise noted

Typical Maximum Junction-to-Ambient A,G -55

Maximum

Thermal Characteristics

Units °C/W 45Parameter

G

S D

G

S

D

G

G D

D

S S

Symbol

Min Typ Max Units

300

350BV DSS /∆TJ 0.29

V/ o C

110I GSS Gate-Body leakage current ±100n ΑV GS(th)Gate Threshold Voltage

3.4

4 4.5V R DS(ON)0.310.42

Ωg FS 11S V SD 0.74

1V I S Maximum Body-Diode Continuous Current 12A I SM

29

A C iss 500

632790pF C oss 5590125pF C rss 3711pF R g

1.3

2.7 4.1ΩQ g 10

12.816

nC Q gs 4.4nC Q gd 4.3nC t D(on)18

ns t r 31ns t D(off)36ns t f 20ns t rr 130170205ns Q rr

1

1.3

1.6µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Drain-Source Breakdown Voltage Body Diode Reverse Recovery Time

Static Drain-Source On-Resistance DYNAMIC PARAMETERS Turn-On Rise Time Forward Transconductance V GS =10V, V DS =150V, I D =12A, R G =25Ω

Gate resistance

Diode Forward Voltage

Reverse Transfer Capacitance I F =12A,dI/dt=100A/µs,V DS =100V

V GS =0V, V DS =25V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions BV DSS µA V

Zero Gate Voltage Drain Current ID=250µA, VGS=0V I DSS Zero Gate Voltage Drain Current V DS =300V, V GS =0V I D =250µA, V GS =0V, T J =25°C I D =250µA, V GS =0V, T J =150°C V DS =5V I D =250µA V DS =240V, T J =125°C I S =1A,V GS =0V

V DS =40V, I D =6A V DS =0V, V GS =±30V V GS =10V, I D =6A Total Gate Charge V GS =10V, V DS =240V, I D =12A

Gate Source Charge Gate Drain Charge Body Diode Reverse Recovery Charge I F =12A,dI/dt=100A/µs,V DS =100V

Maximum Body-Diode Pulsed Current

Input Capacitance Output Capacitance Turn-On DelayTime Turn-Off DelayTime V GS =0V, V DS =0V, f=1MHz

Turn-Off Fall Time

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation P D is based on T J(MAX)=175°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.

G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.H. L=60mH, I AS =3.8A, V DD =150V, R G =10Ω, Starting T J =25°C