IXYS IXTP 01N100D 数据手册

2 - Drain 4 - Drain Bottom Side
Source-Drain Diode
Symbol
Test Conditions
VSD
VGS = -10 V, IF = ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
TL
Weight
Test Conditions
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C;TJ = 25°C to 150°C
T C
=
25°C,
pulse
width
limited
by
T J
TC = 25°C TA = 25°C
Vgs = 0 V, to -10 V, ID = 50 mA Vds = 100 V RG = 30Ω, (External)
100 150
120 15 3
8 6 30 51
mS
pF pF pF
ns ns ns ns
5 K/W
IXTP 01N100D
TO-220 AD Dimensions
Pins: 1 - Gate 3 - Source
Note 1
1.0 1.5 V
t rr
IF = 0.75 A, -di/dt = 10 A/µs,
VDS = 25 V, VGS = -10V
1.5 µs
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
250
mA
Applications
l Level shifting l Triggers l Solid state relays l Currentregulators
© 2001 IXYS All rights reserved
98809A (12/01)
Symbol
gfs Ciss Coss Crss td(on) tr td(off) tf RthJC
Features
l Normally ON mode l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Fast switching speed
Symbol
VDSS VGS(off) IGSS I
DSS(off)
V -5 V
VGS = ±20 VDC, VDS = 0
±100 nA
V = V , V = -10 V
DS
DSS GS
T J
=
25°C
TJ = 125°C
10 µA 250 µA
VGS = 0 V, ID = 50 mA Note 1
90 110 Ω
VGS = 0 V, VDS = 50V Note 1
RDS(on)
ID(on)
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = -10 V, ID = 25 µA VDS = 25V, ID = 25 µA
1000 -2.5
4,850,072
4,881,106 4,931,844
5,017,508 5,034,796
5,049,961 5,187,117 5,486,715 5,063,307 5,237,481 5,381,025
查询IXTP01N100供应商
High Voltage MOSFET
N-Channel, Depletion Mode
IXTP 01N100D
V = 1000 V DSS
ID25 = 100 mA = RDS(on) 110 Ω
Symbol
V DSS
VDGR VGS VGSM ID25 I
DM
PD
TJ TJM Tstg
1.6 mm (0.063 in.) from case for 10 s

V
1000
V
±20
V
±30
V
100
mA
400
mA
25
W
1.1
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1
g
TO-220AB (IXTP)
GDS
D (TAB)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VDS = 50 V; ID = ID25
Note 1
VGS = -10 V, VDS = 25 V, f = 1 MHz