AMORPHOUS CARBON FILM, SEMICONDUCTOR DEVICE, FILM
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专利名称：AMORPHOUS CARBON FILM,
SEMICONDUCTOR DEVICE, FILM FORMING
METHOD, FILM FORMING APPARATUS AND
STORAGE MEDIUM
发明人：KIKUCHI, Yoshiyuki,KOBAYASHI,
Yasuo,KAWAMURA, Kohei,NOZAWA,
Toshihisa,ISHIKAWA, Hiraku
申请号：JP2007073228
申请日：20071130
公开号：WO08/066173P1
公开日：
20080605
专利内容由知识产权出版社提供
摘要：Provided are an amorphous carbon film having a high elasticity and a low thermal contraction ratio with a suppressed specific dielectric constant, a semiconductor device provided with the film and a technology for forming the amorphous carbon film. The amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation. Thus, the amorphous carbon film having a high elasticity and a low thermal contraction ratio with a suppressed specific dielectric constant of 3.3 or less is obtained. Therefore, troubles such as film peeling can be suppressed when the amorphous carbon film is used as a film that configures a semiconductor device.
申请人：KIKUCHI, Yoshiyuki,KOBAYASHI, Yasuo,KAWAMURA, Kohei,NOZAWA, Toshihisa,ISHIKAWA, Hiraku
地址：3-6, Akasaka 5-chome Minato-ku Tokyo 1078481 JP,c/o Tokyo Electron America, Inc., 20004, NW Tanasbourne Drive, Hillsboro, Oregon 97124 US,c/o Tokyo
Electron Technology Development Institute, Inc., 650, Mitsuzawa, Hosaka-cho, Nirasaki-shi Yamanashi 4070192 JP,c/o Tokyo Electron Technology Development Institute, Inc., 650, Mitsuzawa, Hosaka-cho, Nirasaki-shi Yamanashi 4070192 JP,c/o Tokyo Electron Technology Development Institute, Inc., 1-8, Fuso-cho, Amagasaki-shi, Hyogo 6600891 JP,c/o Tokyo Electron Technology Development Institute, Inc., 132-8, Ogasawa, Aza-osawa, Nanakita, Izumi-ku, Sendai-shi, Miyagi 9813131 JP
国籍：JP,US,JP,JP,JP,JP
代理机构：YOSHITAKE, Kenji
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