TLP185全新原装东芝光藕

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TLP701场管输出光藕

The TLP701 is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP701 is capable of “direct” gate driving of low-power IGBTs.
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TLP701
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP701
Industrial inverters Inverter for air conditioners IGBT/Power MOS FET gate drive
TLP701 consists of a GaAℓAs light-emitting diode and an integrated photodetector.
• Supply current
: 2 mA (max)
• Power supply voltage
: 10 to 30 V
• Threshold input current
: IFLH = 5 mA (max)
• Switching time (tpLH / tpHL)
: 700 ns (max)
• Common mode transient immunity
: ±10 kV/µs (min)
• Isolation voltage
: 5000 Vrms (min)
• Construction mechanical rating
7.62-mm pitch standard type
10.16-mm pitch TLPXXXF type

TLP152原装东芝光藕中文资料及电路图

应用பைடு நூலகம்
家用光伏电源微型逆变器等离子平板显示器（ＰＤＰ）通用逆变器、ＡＣ伺服驱动器工业缝纫机
电路实例
轮廓图
ＴＯＳＨＩＢＡ深圳部：恒信宇
1
2012-09-14 Rev.3.0
ＩＧＢＴ／ＭＯＳＦＥＴ栅极驱动耦合器：ＴＬＰ１５２
ＴＬＰ１５２是ＳＯ６封装的ＩＣ光耦，可以直接驱动中型ＩＧＢＴ或功率ＭＯＳＦＥＴ。本产品可以达到ＳＯ６封装的工业最低输出电流２．５Ａ。与现有的产品ＴＬＰ７００（ＳＤＩＰ）相比，本产品的安装面积降低了５０％。而且，由于本产品与前一型号的产品相比，其工作电源电压从１５Ｖ（最小值）降到１０Ｖ（最小值），所以其功耗有所下降。凭借着可以保证的５ｍｍ的最小间隙和爬电距离以及０．４ｍｍ的内部绝缘厚度，该产品符合加强绝缘类的海外安全标准。本产品可以应用于众多要求减少尺寸的产品中，包括光伏电源微型逆变器、数码家电、工业设备以及控制器件，本产品有助于减小产品组件大小和降低成本。＊：由功率器件直接驱动的光耦，截止于２０１２年９月（根据东芝的调查）
特征
峰值输出电流：ＩＯＰ＝±２．５Ａ（最大值）传播延迟时间：ｔｐＨＬ＝１９０ｎｓ（最大值），ｔｐＬＨ＝１７０ｎｓ（最大值）宽广的工作温度范围保证：Ｔｏｐｒ＝－４０°Ｃ至１００°Ｃ工作电源电压：ＶＣＣ＝１０至３０Ｖ隔离电压：ＢＶｓ＝３７５０Ｖｒｍｓ已取得ＥＮ６０７４７－５－５标准认证

东芝(TOSHIBA)复印机耗材对照表

T-3500c
黑色粉盒
东芝E288/358/458/2800/3500
T-3500c
载体
288/358/458/2800/3500/4500/350/450/352/452
T-3500c
硒鼓
288/358/458/2800/3500/4500/350/450/352/452
T-2320c
黑色粉盒
东芝E230/230s/280/280s
T-1600c
载体
东芝E168/169/208/209/258/259
T-1600c
硒鼓
168/169/208/209/258/259/1600/2500/232\s/282\s
163/203/165/205/166/167/206/207/237/230\s/280\s
T-2500c
黑色粉盒
东芝E169/168/208/209/258/260
东芝(TOSHIBA)复印机耗材对照表
型号
颜色
适用机型
T-1820
黑色粉盒
东芝E180s
T-1640c5k
黑色粉盒
东芝E163/203/165/205/166/167
T-1640c
黑色粉盒
东芝E163/203/165/205/166/168
T-1600c
黑色粉盒
东芝E169/168/208/209/258/259
T-1710C
硒鼓
东芝T-1710/2310/2500/2540/2050/1650/2532/3210
T-2060C
黑色粉盒
2040/2060/2068/2860/2868/2870/2878
T-2060C
载体

C1815中文资料参数

C1815中文资料参数-2Sc1815引脚图-三极管c1815管脚排列-代换
本译文译自FAIRCHILE公司东芝飞利浦的1815特性与之基本相同
C1815三极管排列引脚图
命名：2SC1815如果叫法省略通常的叫法C1815 1815
2SC1815代换型号：2SC945 管脚排列一是样的
主要参数：
Symbol符号Parameter 参数Value数值Un VCBO Collector-Base Voltage 集电极-基极电压60
VCEO Collector-Emitter Voltage 集电极-射极电压50
VEBO Emitter-Base Voltage 射极-基极电压 5
IC Collector Current 集电极电流150
电参数：
放大倍数表示：
后缀符号O Y GR L 放大倍数70-140120-240200-400350-700
C1815特性曲线：
静态特性曲线
传输特性曲线
直流电流增益曲线
基极-发射饱和电压曲线集电极-射极饱和电压曲线
输出电容曲线
电流增益带宽曲线
外形封装图。

TLP521中文资料 datasheet

TLP521是可控制的光电藕合器件，光电耦合器广泛作用在电脑终端机，可控硅系统设备，测量仪器，影印机，自动售票，家用电器，如风扇，加热器等电路之间的信号传输，使之前端与负载完全隔离，目的在于增加安全性，减小电路干扰，减化电路设计。

东芝TLP521－1，－2和－4组成的砷化镓红外发光二极管耦合到光三极管。

该TLP521－2提供了两个孤立的光耦8引脚塑料封装，而TLP521－4提供了4个孤立的光耦中16引脚塑料DIP封装集电极-发射极电压： 55Ｖ（最小值）经常转移的比例： 50 ％（最小）隔离电压： 2500 Vrms （最小）图1 TLP521 TLP521-2 TLP521-4 光藕内部结构图及引脚图图2 TLP521-2 光电耦合器引脚排列图Absolute Maximum Ratings 绝对最大额定值(Ta = 25℃)注：使用连续负载很重的情况下（如高温/电流/温度/电压和重大变化等），可能会导致本产品的可靠性下降明显甚至损坏。

Recommended Operating Conditions建议操作条件*1: Ex. rank GB: TLP521−1 (GB)(Note): Application type name for certification test, please use standard product type name, i.e.TLP521−1 (GB): TLP521−1, TLP521−2 (GB): TLP521−2Individual Electrical Characteristic 单独的电气特性参数(Ta = 25℃)Coupled Electrical Characteristic 耦合电气特性参数s(Ta = 25℃)Isolation Characteristic 耦合电气特性参数(Ta = 25℃)Switching Characteristic 开关特性参数(Ta = 25℃)图3 TLP521-1 封装图图4 TLP521-2 封装图图5 TLP521-4 封装图图6 开关时间测试电路特性曲线图：应用电路：图7 打开或关闭12V直流电动机的TTL控制信号输入电路图74HC04 特性:∙缓冲输入∙传输延迟(典型值): 6ns at V CC = 5V, C L = 15pF, T A= 25°C∙扇出（驱动）能力： (在温度范围内)- 标准输出 . . . . . . . . . . . . . . . 10 LSTTL Loads- 总线驱动 . . . . . . . . . . . . . . . 15 LSTTL Loads ∙宽工作温度范围 . . . –55°C to 125°C∙对称的传输延迟和转换时间∙相对于LSTTL逻辑IC，功耗减少很多∙HC Types- 工作电压：2V到6V- 高抗扰度: N IL = 30%, N IH= 30% of V CC at V CC = 5V∙HCT Types- 工作电压：4.5V到5.5V- 兼容直接输入LSTTL逻辑信号, V IL= 0.8V (Max), V IH = 2V (Min)- 兼容CMOS逻辑输入, I l1μA at V OL, V O该74HC04/74HCT04是高速CMOS器件，低功耗肖特基的TTL(LSTTL)电路。

C1815

VEB=5V, IC=0
-
-
0.1
μA
hFE1 hFE2
DC Current Gain直流电流增益
VCE=6V, IC=2mA
VCE=6V, IC=150mA
70
25
-
700
-
VCE(sat)
Collector-Emitter Saturation Voltage集电极-发射极饱和电压
IC=100mA, IB=10mA
℃
电参数：
Symbol符号
Parameter参数
Test Condition测试条件
Min.最小
Typ.平均
Max.最大
Units单位
ICBO
Collector Cut-off Current集电极截止电流
VCB=60V, IE=0
-
-
0.1
μA
IEBO
Emitter Cut-off Current射极截止电流
5
V
IC
Collector Current集电极电流
150
mA
IB
Base Current基极电流
50
mA
PC
Collector Power Dissipation耗散功率
400
mW
TJ
Junction Temperature结温
5
℃
TSTG
Storage Temperature贮藏温度
-55 ~ 150
-
0.1
0.25
V
VBE (sat)
Base-Emitter Saturation Voltage基极-射极饱和电压
IC=100mA, IB=10mA

光耦问题大解决

最近在使用光耦的时候遇到几个问题恳请指教？小生在使用光耦的时候遇到几个问题，恳请大侠指教：1：CTR（50%-300%）是什么意思？在电路中这个CTR是多少？与If有关吗？2：光耦的工作方式是电流控制还是电压控制。

最近在PS2561与TL431配合稳压反馈的电路中，外部参数怎么调整光耦都在正常工作，很费解。

3：希望有大侠分享光耦的使用心得。

潮光光耦网答：1、CTR（50%-300%）是电流传输比，CTR（Curremt-Trrasfer Ratio），它等于直流输出电流IC与直流输入电流IF的百分比。

简单来讲，就是个电流放大系数。

50%-600%是该系列光耦的CTR，在电路中是多少要看你选择的是哪个光耦。

? 2、光耦是电流控制的，你调节外部参数还在那个工作的范围里面，肯定可以工作啊，如果你把限流的电阻加很大就会出问题了。

? 3、CTR是电流传输比Ice/If我知道。

但是在具体电路中CTR的值是变化的还是固定的呢。

我用的光耦是NEC的PS2561，W系列。

传输比是130%-260%，看规格书是说CTR与If有关，是吗？另外我也想知道怎么来测量光耦的传输比。

在这个电路中，我通过改变R425的阻值，从100R改变为15K，光耦均能正常工作，R426两端的电压维持在1V。

当R425=100R的时候，Vk=22.9V，计算得出流过光耦的电流为1.1mA；当R425=15K的时候，Vk=3.68V，计算得出流过光耦的电流为0.13mA.这个电流变化还是很大的，但是光耦正常工作。

关于东芝光耦缺货型号,瑞萨(原NEC)光耦替代方案.关于东芝光耦缺货型号,潮光光耦网()建议各位采购和技术人员,瑞萨(原NEC)光耦替代方案另外还有很多高速光耦型号的替代详情登录光耦器件在变频器电路中的作用一、电路中为什么要使用光耦器件？电气隔离的要求。

A与B电路之间，要进行信号的传输，但两电路之间由于供电级别.一、电路中为什么要使用光耦器件？电气隔离的要求。

TLP185全新原装东芝光藕

恒信宇电子仪表电器元件器材配套：集成电路IC、二三极管、光电藕合器、可控硅、LED电源驱动IC……
TLP181可一采用TLP185进行替代
由于使用了S06封装，TLP184 和TLP185晶体管耦合器比前一代产品要轻薄，而且能在高温
下正常工作(Ta = 110度最大值)。

TLP184 和TLP185分别是TLP180 and TLP181的更新产品。

能轻易用这些产品代替现在的这些型号，因为这些产品的参考衰减器尺寸与现在的MFSOP6封装型号的尺寸是一样的。

而且，由于更轻薄，这些产品能将安装高度从先前的2.8毫米，降低到2.3毫米。

因为SO6封装能确保最小的间隙和爬电距离为5毫米，而不是现有型号MFSOP6封装中的4毫米。

所以这些产品的最大允许操作隔离电压为707 Vpk，EN60747-5-2中已明确规定过。

所以，TLP184 和TLP185能更换DIP封装区域的零件(TLP781，TLP785等)。

而且，这种产品能确保内部绝缘厚度为0.4毫米，而且属于加强绝缘种类，符合国外安全标准。

因为这些产品都达到了UL、cUL、VDE及BSI等国际认证的安全标准，所以他们非常适合AC 适配器、开关电源供电及FA设备等电子应用场合。

TLP785/TLP781代替TLP521/TLP421/TLP621
TLP785/TLP781是东芝TOSHIBA研发的TLP521/TLP421/TLP621升级版，并将逐步取代TLP521/TLP421/TLP621的生产。

恒信宇Emal:jsong820@。

东芝TLP620,TLP620-2,TLP620-4光耦合器说明书

TOSHIBA Photocoupler GaAs Ired & Photo−TransistorTLP620, TLP620−2, TLP620−4Programmable ControllersAC / DC−Input ModuleTelecommunicationThe TOSHIBA TLP620, −2 and −4 consists of a photo−transistoroptically coupled to two gallium arsenide infrared emitting diodeconnected in inverse parallel.The TLP620−2 offers two isolated channels in an eight lead plastic DIP,while the TLP620−4 provides four isolated channels in a sixteen plasticDIP.· Collector−emitter voltage: 55V (min.)· Current transfer ratio: 50% (min.)Rank GB: 100% (min.)Pin Configurations (top view)TLP6201 2431 : ANODECATHODE2 : CATHODEANODE3 : EMITTER4 : COLLECTOR1, 3 : ANODECATHODE2, 4 : CATHODEANODE5, 7 : EMITTER6, 8 : COLLECTOR234561, 3, 5, 7 : ANODE, CATHODE2, 4, 6, 8 : CATHODE, ANODE9, 11, 13, 15 :EMITTER10, 12, 14, 16 : COLLECTORTOSHIBA 11−5B2Weight: 0.26 gTOSHIBA 11−10C4Weight: 0.54 gTOSHIBA 11−20A3Weight: 1.1 gUnit in mmMade In Japan Made In Thailand UL recognized E67349 *1E 152349 *1BSI approved7426, 7427*27426, 7427*2*1 UL 1577*2 BS EN60065: 1994, BS EN60950: 1992· Isolation voltage: 5000V rms (min.)· Option (D4) typeVDE approved: DIN VDE0884 / 06.92, certificate no. 68384 Maximum operating insulation voltage: 890V PK Highest permissible over voltage: 8000V PK(Note) When a VDE0884 approved type is needed,please designate the “Option(D4)”.· Creepage distance: 6.4mm (min.)Clearance: 6.4mm (min.)Insulation thickness: 0.4mm (min.)Maximum Ratings (Ta = 25°C)RatingCharacteristic SymbolTLP620TLP620-2 TLP620-4UnitForward current I F (RMS) 60 50 mAForward current derating ∆I F / °C -0.7 (Ta ≥ 39°C)-0.5 (Ta ≥ 25°C)mA / °CPulse forward current I FP 1 (100µs pulse, 100pps) APower dissipation (1 circuit) P D 100 70 mW Power dissipation derating ∆P D / °C-1.0-0.7 mW / °CL E DJunction temperature T j125 °CCollector -emitter voltage V CEO 55 VEmitter -collector voltage V ECO 7 VCollector currentI C 50 mA Collector power dissipation (1 circuit)P C 150 100 mW Collector power dissipation derating (1 circuit) (Ta ≥ 25°C) ∆P C / °C-1.5-1.0 mW / °CD e t e c t o rJunction temperature T j 125 °CStorage temperature range T stg -55~125 °COperating temperature range T opr-55~100 °CLead soldering temperature T sold 260 (10s) °C Total package power dissipation P T 250 150 mW Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) ∆P T / °C-2.5-1.5 mW / °CIsolation voltageBV S 5000 (AC, 1 min., RH ≤ 60%)V rmsRecommended Operating ConditionsCharacteristic Symbol Min.Typ.Max.UnitSupply voltage V CC ― 5 24 V Forward current I F (RMS) ― 16 20 mA Collector current IC ― 110 mAOperating temperatureT opr-25― 85 °CIndividual Electrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min. Typ. Max.UnitForward voltage V F I F = ±10mA 1.01.151.3 VFoward currentI FV F = ±0.7V ― 2.5 20 µA L E DCapacitance C T V = 0, f = 1MHz ― 60 ― pF Collector -emitterbreakdown voltage V (BR) CEO I C = 0.5mA55―― VEmitter -collector breakdown voltage V (BR) ECOI E = 0.1mA 7 ― ― V V CE = 24V―10100nACollector dark current I CEO V CE = 24V, Ta = 85°C ― 2 50 µA D e t e c t o rCapacitance(collector to emitter)C CEV CE = 0, f = 1MHz―10― pFCoupled Electrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition MIn. Typ. Max.Unit50 ― 600Current transfer ratioI C / I FI F = ±5mA, V CE = 5V Rank GB100― 600%― 60 ― Saturated CTRI C / I F (sat)IF = ±1mA, V CE = 0.4V Rank GB30 ――%I C = 2.4mA, I F = ±8mA―― 0.4― 0.2 ― Collector -emitter saturation voltageV CE (sat)I C = 0.2 mA, I F = ±1 mA Rank GB― ― 0.4 VOff -state collector current I C (off) V F = ± 0.7V, V CE = 24V ― 110 µACTR symmetryI C (ratio)I C (I F = -5mA) / I C (I F = +5mA)0.331 3 ―Isolation Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min. Typ. Max.UnitCapacitance input tooutputC S V S = 0, f = 1MHz ― 0.8 ― pF Isolation resistanceR SV S = 500V 1×1012 1014 ― Ω AC, 1 minute5000 ― ― AC, 1 second, in oil ― 10000 ― V rms Isolation voltageBV SDC, 1 minute, in oil―10000―V dcSwitching Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min. Typ. Max.UnitRise time tr ― 2 ―Fall time t f ― 3 ― Turn -on time t on ― 3 ― Turn -off time t off V CC = 10V I C = 2mA R L = 100Ω― 3 ― µsTurn -on time t ON ― 2 ― Storage time t s ―15―Turn -off timet OFFR L = 1.9k Ω (Fig.1)V CC = 5V, I F = ±16mA ― 25 ―µsFig. 1 Switching time test circuitI FV CCV CECCTLP620-2 TLP620-4 I F – TaAmbient temperature Ta (°C)A l l o w a b l e f o r w a r d c u r r e n t I F (R M S ) (m A )100-2060400 20 40 60 80 100 8020120TLP620 P C – TaAmbient temperature Ta (°C)A l l o w a b l e c o l l e c t o r p o w e r d i s s i p a t i o n P C (m W )240-20 4016060100120080200120204080TLP620-2 TLP620-4 P C – TaAmbient temperature Ta (°C)A l l o w a b l e c o l l e c t o r p o w e r d i s s i p a t i o n P C (m W )1200-20400 40 10080602020 60 80 100 120TLP620 I FP – D RDuty cycle ratio D R A l l o w a b l e p u l s e f o r w a r d c u r r e n t I F P (m A )1 310311 3 3TLP620-2 TLP620-4 I FP – D RDuty cycle ratio D RA l l o w a b l e p u l s e f o r w a r d c u r r e n t I FP (m A )111 310 310 3100103TLP620 I F – TaAmbient temperature Ta (°C) A l l o w a b l e f o r w a r d c u r r e n t I F (R M S ) (m A )0-208040200 20 40 60 8010060100120∆V F / ∆Ta – I FForward current I F (mA)F o r w a r d v o l t a g e t e m p e r a t u r e c o e f f i c i e n t ∆V F / ∆T a (m V/ °C ) 1-2.8-2.4-2.0-1.6-1.2-0.8-0.40.10.331030I D – T aAmbient temperature Ta (°C)C o l l e c t o r d a r k c u r r e n t ID (µA )4080120160101010-10-10-10-I FP – V FPPulse forward voltage V FP (V)P u l s e f o r w a r d c u r r e n t I F P (m A )1100.40.81.21.6 2.01 2.4C o l l e c t o r c u r r e n t I C (m A )I C – V CECollector-emitter voltage V CE (V)C o l l e c t o r c u r r e n t I C (m A )24610I F – V FForward voltage V F (V) F o r w a r d c u r r e n tI F (m A )110.0.40.60.81.01.21.41.6I C – V CECollector-emitter voltage V CE(V)1100.40.61.4V F – I FForward voltage V F (V)F o r w a r d v o l t a g e I F (m A )-- 20.313103010011I C / I F – I FForward current I F (mA)C u r r e n t t r a n s f e r r a t i o I C / I F (%)I C – V FForward voltage V F (V)C o l l e c t o r c u r r e n t I C (m A )110.0.0I C – I FForward current I F (mA) C o l l e c t o r c u r r e n t I C (m A )110.I C – TaAmbient temperature Ta (°C)110. C o l l e c t o r c u r r e n t I C (mA )1111R L – Switching TimeLoad resistance R L (k Ω)S w i t c h i n g t i m e (µs )V CE (sat) – TaAmbient temperature Ta (°C)C o l l e c t o r -e m i t t e r s a t u r a t i on v o l t a g e V C E (s a t ) (V )2040600.10.10· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws.· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.000707EBCRESTRICTIONS ON PRODUCT USEThis datasheet has been download from: Datasheets for electronics components.。

友台半导体UMW TLP181小型光电耦合器说明书

OFFICE MACHINEPROGRAMMABLE CONTROLLERSAC/DC-INPUT MODULETELECOMMUNICATIONThe UMW MINI FLAT COUPLER TLP181 is a small outline coupler, suitable for surface mount assembly.TLP181 consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP package.•Collector-Emitter Voltage •Current Transfer RatioRank GB •Isolation Voltage•UL Recog nized : 80V(M in.): 50%(Min.): 100%(Min.): 3750V nn s (Min.): UL1577, File No. E4924401: Anode3: Cathode4: Emitter6: CollectorCURRENT TRANSFER RATIOCLASSI-�URRENT TRANSFER RATIO(%)(I r,/ I F)TYPE FICATION I F=5mA, V c E=5V, T a=25°C*1MIN. MAX.(None) 50 600Rank Y 50 150 TLP181 Rank GR 100 300Rank B L 200 600Rank GB 100 600*1 : EX, R ank GB : UM W TLP181 G B MARKIN G OF CLASSIFICATION B LANK, Y, Y曰G,G•,B,B•,GB Y, y■G,G•B,B■G,G•,B,B•,GBMAXIMUM RATINGS (Ta= 25°C)CHARACTERISTICF orward Current目占F orward Current DetatingPulse F orward CurrentReverse VoltageJunction TemperatureCollector-Emitter Voltage恳Emitter-Collector VoltageCollector Current且仁Collector Power Dissipation (1 Circuit) Collector Power Dissipation Derating(1 Circuit Ta�25°0)Junction TemperatureStorage Temperature RangeOperating Temperature Range Lead Soldering TemperatureTotal Package Power DissipationTotal Package Power Dissipation Derating (Ta�25°C) Isolation Voltage(Note 1)SYM B OL I FL1I F / o c l F P V R T j V c EO V ECOI c P cL1P c 1°c T i T stgT 。

东芝TLP350F光耦合器数据表说明书

TOSHIBA Photocoupler GaA ℓAs IRED + Photo ICTLP350FIndustrial InverterInverter for Air ConditionerIGBT/Power MOSFET Gate Drive IH(Induction Heating)The TOSHIBA TLP350F consists of a GaA ℓAs light-emitting diode and an integrated photodetector.This unit is an 8-lead DIP package.The TLP350F is suitable for gate driving IGBTs or power MOSFETs.Absolute maximum ratings and electrical characteristics are the same as TLP350technical datasheet.• Peak output current: I O = ±2.5A (max)• Guaranteed performance over temperature: −40 to 100°C • Supply current:I CC = 2 mA (max) • Power supply voltage: V CC = 15 to 30 V • Threshold input current : I FLH = 5 mA (max) • Switching time (t pLH /t pHL ) : 500 ns (max) • Common mode transient immunity: 15 kV/μs • Isolation voltage: 3750 Vrms• UL Recognized : UL1577,File No.E67349 • Option(D4)VDE Approved : DIN EN 60747-5-2Maximum Operating Insulation Voltage : 1140V PK Highest Permissible Over Voltage : 6000V PK (Note): When an EN60747-5-2 approved type is needed, Please designate “Option(D4)”• Construction mechanical ratingTruth Table Input LED Tr1 Tr2 Output H ON ON OFF H LOFF OFF ONLUnit: mmTOSHIBA 11-10C402 Weight: 0.54 g (typ.)81: NC 2: Anode 3: Cathode 4: NC 5: GND6: V O (output)7: NC 8: V CC7 6 51234A 0.1 μF bypass capacitor must be connected between pins 8 and 5. (See Note 6)2+3−V CCV OGND(Tr1)(Tr2) I CC I O I FV F8657.62mm pitch TLP350 type 10.16mm pitch TLP350F type Creepage distance ClearanceInsulation thickness6.4 mm (min) 6.4 mm (min) 0.4 mm (min) 8.0 mm (min) 8.0 mm (min) 0.4 mm (min)Pin Configuration (top view)SchematicRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.•GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

光耦器件选型列表

高速，转换时间：0.5us
SHARP 电流转换率 50%-400%@5mA 50%-400%@5mA 50%-600%@5mA [Min] 1000%@1mA [Min] 20%@1mA [Min] 20%@1mA [Min] 50%@5mA [Min] 80%@5mA [Min] 80%@5mA [Min] 80%@5mA NEC 电流转换率转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-400%@5mA，详见PDF 转换率范围：50%-300%@5mA，详见PDF 转换率范围：50%-400%@5mA，详见PDF 转换率范围：50%-300%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF AVAGO 电流转换率 [Min] 0.25%@10mA [Min] 0.36%@10mA 其它描述高速，10MBd 其它描述其它描述
HCPL-4504 HCPL-4506
1 1
8mA 15mA
20V -
3750Vrms 3750Vrms
FAIRCHILD 最大电流输出 100mA 100mA 100mA 100mA 150mA 150mA 150mA 2mA / 100mA 100mA 8mA 8mA 50mA 60mA 60mA 最大电压输出 30V 30V 30V 30V 30V 30V 30V 20V 20V 7V 7V / 18V 隔离电压 2500Vrms 7500Vrms 7500Vrms 7500Vrms 5300Vrms 多种 5300Vrms 多种 7500Vrms 2500Vrms 2500Vrms 2500Vrms 2500Vrms 2500Vrms

TLP351伺服光藕

Recommended Operating Conditions
Characteristics
Symbol
Min Typ. Max Unit
Input current, ON Input voltage, OFF Supply voltage Peak output current Operating temperature
Note 5: Device considered a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together.
Note 6: A ceramic capacitor(0.1 μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm.
“H” Level “L” Level
Supply current
Threshold input current Threshold input voltage Supply voltage
“H” Level “L” Level
L→H H→L
Symbol VF
Test Circuit
Test Condition

TLP185耐高温光偶

BS EN60950-1:2006, Certificate No. 9021
• Option (V4) type
VDE approved: EN60747-5-2, Certificate No. 40009347
(Note): When a EN60747-5-2 approved type is needed,
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
Collector power dissipation derating (Ta ≥ 25°C)
—
3750 —
—
— 10000 —
— 10000 —
pF Ω Vrms Vdc
4
2012-02-14
TLP185
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Collector−emitter saturation voltage Off−state collector current
Symbol
Test Condition
IC / IF
IF = 5 mA, VCE = 5 V Rank GB
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V Rank GB
1.1 1.25 1.4
V

东芝光电耦合器TLP291

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTORTLP291-4Programmable Controllers Power SuppliesThe Toshiba TLP291-4 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291-4 is housed in the SO16 package, very small and thin coupler.Since TLP291-4 are guaranteed wide operating temperature (Ta=-55 to 110 ˚C), it ’s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs.Collector-Emitter Voltage : 80 V (min) Current Transfer Ratio: 50% (min) Rank GB : 100% (min) Isolation Voltage: 2500 Vrms (min)Guaranteed performance over -55 to 110 ˚CUL approved : UL1577 , File No. E67349 cUL approved : CSA Component Acceptance ServiceNo.5AOption (V4) typeVDE approved : EN60747-5-2(Note) : When a EN60747-5-2 approved type is needed,Please designate “Option(V4)” Construction mechanical ratingCreepage distance : 5.0 mm(min) Clearance: 5.0 mm(min) Insulation thickness : 0.1 mm(min)TOSHIBA 11-11F1 1,3,5,7 :ANODE 2,4,6,8:CATHODE 9,11,13,15 :EMITTER 10,12,14,16 :COLLECTORTLP291-4 910 11 12 13 14 15 16 Pin ConfigurationUnit in mmCurrent Transfer RatioNote1: ex. Rank GB: TLP291-4 (GB)Application type name for certification test, please use standard product type name, i.e.TLP291 4 (GB,E: TLP291-4Absolute Maximum Ratings (Ta = 25℃)Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly evenif the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximumratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).Note2: Pulse width 100μs, frequency 100HzNote3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted together.Individual Electrical Characteristics (Ta = 25℃)Coupled Electrical Characteristics (Ta = 25℃)Isolation Characteristics (Ta = 25℃)Switching Characteristics (Ta = 25℃)(Fig.1) Switchin Time Test CircuitSoldering and Storage1. Soldering1.1 SolderingWhen using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as much as possible by observing the following conditions.1) Using solder reflow∙Temperature profile example of lead (Pb) solder∙Temperature profile example of using lead (Pb)-free solderReflow soldering must be performed once or twice.The mounting should be completed with the interval from the first to the last mountings being 2 weeks.2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder) ・Please preheat it at 150°C between 60 and 120 seconds.・Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once. 3) Using a soldering ironComplete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may be heated at most once.Time(s)(°C)P a c k a g e s u r f a c e t e m p e r a t u r eTime(s)(°C)P a c k a g e s u r f a c e t e m p e r a t u r eThis profile is based on the device ’s maximum heat resistance guaranteed value.Set the preheat temperature/heatingtemperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile.2. Storage1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.2) Follow the precautions printed on the packing label of the device for transportation and storage.3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively.4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions.5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads.6) When restoring devices after removal from their packing, use anti-static containers.7) Do not allow loads to be applied directly to devices while they are in storage.8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use.Option:Specification for Embossed-Tape Packing(TP) for Mini-Flat Coupler1. Applicable Package2. Product Naming SystemType of package used for shipment is denoted by a symbol suffix after a product number. The method of classification is as below.（Example ）ＴＬＰ２９１－４（ＧＢ－ＴＰ，E[[G]]/RoHS COMPATIBLE (Note6) Tape type CTR rank Device name3. Tape Dimensions3.1 Orientation of Device in Relation to Direction of Tape MovementDevice orientation in the recesses is as shown in Figure 1.Figure １ Device Orientation3.2 Tape Packing Quantity ：2000 devices per reel3.3 Empty Device Recesses are as Shown in Table 1.Table １ Empty Device Recesses3.4 Start and End of TapeThe start of the tape has 50 or more empty holes. The end of tape has 50 or more empty holes and two empty turns only for a cover tape.TLP291－43.5 Tape Specification(1) Tape material: Plastic (protection against electrostatics)(2) Dimensions: The tape dimensions are as shown in Figure 2 and table 2.Figure2 Tape FormsTable2 Tape DimensionsUnit: mm3.6Reel(1) Material: Plastic(2) Dimensions: The reel dimensions are as shown in Figure 3 and Table 3.Figure 3 Reel Forms4. PackingEither one reel or five reels of photocouplers are packed in a shipping carton.5. Label IndicationThe carton bears a label indicating the product number, the symbol representing classification of standard, the quantity, the lot number and the Toshiba company name.6. Ordering MethodWhen placing an order, please specify the product number, the CTR rank, the tape type and the quantity as shown in the following example.（Example ）TLP291-4(GB-TP ,E 2000 PcsQuantity (must be a multiple of 2000) [[G]]/RoHS COMPATIBLE (Note6) Tape type CTR rank Device nameNote6 : P lease contact your TOSHIBA sales representative for details as to environmental matters such as theRoHS compatibility of Product.The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronics equipment.Table 3 Reel DimensionsUnit: mmRESTRICTIONS ON PRODUCT USEToshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) theinstructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITYWHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.。

光藕TLP701

Note 7: Input signal rise time (fall time) < 0.5 μs.
2
2007-10-01
TLP701
Electrical Characteristics (Ta = −40 to 100 °C, unless otherwise specified)
Characteristics
4.58±0.25 654
123
+0.15 −0.25
6.8±0.25
Unit in mm
7.62±0.25
+0.25 −0.20
4.0
+0.10 −0.05
3.65
0.25±
• Peak output current
: ±0.6 A (max)
• Guaranteed performance over temperature : −40 to 100°C
The TLP701 is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP701 is capable of “direct” gate driving of low-power IGBTs.
Note 4: For the effective lead soldering area
Note 5: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively.
(Note 1)
(Note 2) (Note 2)

tlp2355原理

tlp2355原理
tlp2355是一种光耦合器件，也被称为光电耦合器。

它通常由
发光二极管（LED）和光敏二极管（光探测器）组成。

其工作原理是
利用LED发出的光信号照射到光敏二极管上，从而实现输入和输出
之间的电气隔离和信号传输。

从LED的角度来看，当LED端施加电压时，LED会发出光信号。

这个光信号经过光耦合器中的隔离层传播到光敏二极管的光敏区域。

光敏二极管的光敏区域会吸收LED发出的光信号，产生电荷载流子，从而在光敏二极管中产生电流或电压信号。

这个电流或电压信号可
以视为光耦合器的输出信号。

从电气隔离的角度来看，光耦合器实现了输入和输出之间的电
气隔离。

这是因为LED和光敏二极管之间的信号传输是通过光信号
而不是直接的电气连接。

这种电气隔离可以带来很多优势，比如可
以防止输入端的电气噪声传播到输出端，提高系统的稳定性和安全性。

总的来说，tlp2355光耦合器的工作原理涉及LED发出光信号，光信号经过隔离层照射到光敏二极管上，光敏二极管产生对应的电
流或电压信号，实现输入和输出之间的电气隔离和信号传输。

这种器件在工业控制、通信设备和医疗器械等领域有着广泛的应用。

tlp2355原理

tlp2355原理
TLP2355是一种高速光耦合器件，它能够在输入端和输出端之间传递光信号，实现电-光转换和光-电转换的功能。

它的原理是利用光电二极管和发光二极管之间的光耦合效应，将电信号转化为光信号或将光信号转化为电信号。

通过这种原理，TLP2355能够实现高速的信号传输，具有很高的带宽和低的传输延迟。

它广泛应用于通信、计算机网络、工业自动化等领域，可以实现高速数据传输和远距离信号传输。

TLP2355的工作原理是当输入端的电信号发生变化时，光电二极管会产生相应的光信号，这个光信号经过光耦合器件的光导道传输到输出端，然后通过光电二极管转换为电信号。

这样，输入端的电信号就能够在输出端得到准确的传输。

TLP2355的工作原理非常稳定可靠，能够在各种环境条件下正常工作。

它具有很高的隔离电压和抗干扰能力，能够有效地阻止输入端和输出端之间的干扰信号传播。

除了高速传输和稳定可靠的特点，TLP2355还具有体积小、功耗低、使用方便等优点。

它的封装形式多样，可以根据不同的应用需求选择不同的封装尺寸和引脚排布。

总结起来，TLP2355是一种高速光耦合器件，利用光电二极管和发光二极管之间的光耦合效应实现电-光转换和光-电转换。

它具有高速
传输、稳定可靠、隔离电压高、抗干扰能力强等特点，广泛应用于通信、计算机网络、工业自动化等领域。

通过TLP2355，我们能够实现高速数据传输和远距离信号传输，为各种应用提供了便利和可靠性。