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模具(机械)英语词汇表

英语词汇表Aabrasive grinding 强力磨削L3 abrasive[breisiv] a.磨料的, 研磨的L2,3 absence [bsns] n.. 不在,缺席L17 accesssory[ksesri] n.附件L10 accommodate[kmdeit] v. 适应L5 accordingly[k:dili] adv.因此,从而,相应地L7,13accuracy[kjursi] n精度,准确性L1,3 actuate[ktjueit] vt.开动(机器), 驱动L8 adequate[dikwit] a. 足够的L13 adhesive[dhi:siv] n. 粘合剂L22 adjacent[deisnt] a. 邻近的L13adopt[dpt] vt. 采用L4advance [dv:ns] n.进步L7advisable [dvaizbl] adj. 可取的L20 agitate[diteit] v. 摇动L2a large extent 很大程度L4,13 algorithm [lrim] n. 算法L6align [lain] v 定位,调准L17alignment[lainmnt] n. 校直L11all-too-frequent 频繁L17allowance[luens] n. 容差, 余量L5 alternate[:ltnit]v.交替,轮流L1 alternative[:lt:ntiv] n. 替换物L3 alternatively[:lt:ntivli] ad. 做为选择, 也许L5aluminiun[ljuminjm] n.铝L2ample[mpl] adj. 充足的L20analysis [nlsis] n. 分析L6ancillary[nsilri] a.补助的, 副的L4 angular [jul] adj. 有角的L20 annealing[li:li] n.退火L2aperture [pt] n.孔L17applied loads 作用力L1appropriate [pruprieit] a. 适当的L6,20 arc[a:k] n.弧, 弓形L10arise[raiz] vi. 出现, 发生L21arrange[reid] v. 安排L12article[a:tikl] n.制品, 产品L21 ascertain[stein] vt. 确定, 查明L1 assemble[sembl] vt.组装L4attitude [titju:d] n 态度L17auxiliary [:ziljri]adj. 辅助的L8 avoid[vid] v.避免L7axis[ksis] n.轴L5axle[ksl] n.轮轴, 车轴L1Bbackup[bkp] n. 备份L9batch [bt] n 一批L17bearing[bri] n.轴承,支座L21bed[bed] n. 床身L5behavior[biheivj] n. 性能L1 bench-work 钳工工作L4bend[bend] v.弯曲L1beneath[bini:] prep在···下L4bin [bin] n. 仓,料架L19blank [blk] n. 坯料L20blank [blk] v. 冲裁,落料L17 blanking tool 落料模L17blast [blst] n.一阵(风) L18 blemish[blemi] n. 缺点, 污点L13 bolster[bulst] n. 模座,垫板L4,5 boost[bu:st] n. 推进L9boring[b:ri] n.镗削, 镗孔L4,5bracket [brkit] n. 支架L19brass [brs] n.黄铜L2break down 破坏L1breakage [breikid] n.破坏L17bridge piece L16brine[brain] n. 盐水L2brittle[britl] adv.易碎的L1buffer [bf] n.缓冲器L8built-in 内装的L9bulging [bldi] n. 凸肚L22burr [b:] n. 毛刺L17bush [bu] n. 衬套L17bush[bu]n. 衬套L5by far (修饰比较级, 最高级)···得多, 最L3 by means of 借助于L5Ccabinet [kbinit] n.橱柜L7call upon 要求L17carbide[ka:baid] n.碳化物L10 carburzing[ka:bjureti] n. 渗碳L2 carriage[krid] n.拖板, 大拖板L5carry along 一起带走L18carry down over 从···上取下L21 carry out 完成L17case hardening 表面硬化L2case[keis] n. 壳, 套L2cast steel 铸钢L17casting[ka:sti] n. 铸造,铸件L3 category[kturi] n. 种类L6,15 caution [k:n] n. 警告,警示L17 cavity and core plates 凹模和凸模板L11cavity[kviti] n.型腔, 腔, 洞L4,10 centre-drilling 中心孔L5ceramic[sirmik] n.陶瓷制品L3 chain doted line 点划线L11 channel[tnl] n.通道, 信道L8 characteristic[krktristik] n.特性L1 check[tek] v.核算L21chip[tip] n.切屑, 铁屑L3chuck [tk] n.卡盘L5,8chute [u:t] n. 斜道L19circa [sk:] adv. 大约L7circlip[s:klip] n.(开口)簧环L22circuit[s:kit] n. 回路, 环路L13 circular supoport block L5circulate[s:kjuleid] v.(使)循环L13 clamp [klmp] vt 夹紧L17clamp[klmp] n.压板L12clay[klei] n. 泥土L2,7clearance [klirns] n. 间隙L17clip [klip] vt. 切断,夹住L19cold hobbing 冷挤压L4cold slug well 冷料井L12collapse[klps] vi.崩塌, 瓦解L22 collapsible[klpsbl] adj.可分解的L22 combination [kmbinein] n. 组合L18 commence[kmens] v. 开始, 着手L16 commence[kmens]v. 开始L21 commercial [km:l] adj. 商业的L7 competitive[kmpetitiv] a. 竞争的L9 complementary[kmplimentri] a. 互补的L5complexity [kempleksiti] n.复杂性L8 complicated[kmplkeitid] adj.复杂的L2 complication [kmplikein] n. 复杂化L5,20compression [kmpren] n.压缩L1 comprise[kmprais] vt.包含L16 compromise[kmprmaiz] n. 妥协, 折衷L13concern with 关于L6concise[knsais] a. 简明的, 简练的L9 confront[knfrnt] vt. 使面临L14 connector[knekt] n. 连接口, 接头L14 consequent[knsikwnt] a. 随之发生的, 必然的L3console [knsoul] n.控制台L8 consume [knsjum] vt. 消耗, 占用L7 consummate [knsmeit] vt. 使完善L6 container[kntein] n. 容器L11 contingent[kentindnt] a.可能发生的L9 contour[kntu] n.轮廓L5,21 conventional[knvennl] a. 常规的L4 converge[knv:d] v.集中于一点L21 conversant[knv:snt] a. 熟悉的L15 conversion[knv:n] n 换算, 转换L7 conveyer[kenvei] n. 运送装置L12coolant[ku:lnt] n. 冷却液L13 coordinate [ku:dnit] vt. (使)协调L8 copy machine 仿形(加工)机床L4core[k:] n. 型芯, 核心L2,4 corresponding [ka:rispdi] n.相应的L7 counteract [kauntrkt] vt. 反作用,抵抗L20couple with 伴随L20CPU (central processing unit) 中央处理器L9crack[krk ] v.(使)破裂,裂纹L1,17 critical[kritikl] adj.临界的L2cross-hatching 剖面线L16cross-section drawn 剖面图L11cross-slide 横向滑板L5CRT (cathoder-ray tube) 阴极射线管L9 crush[kr]vt.压碎L1cryogenic[kraidenik ]a.低温学的L1 crystal[kristl] adj.结晶状的L1cubic[kju:bik] a. 立方的, 立方体的L3 cup [kp] vt (使)成杯状, 引伸L18 curable [kjurbl] adj. 可矫正的L20curvature[k:vt] n.弧线L21curve [k:v] vt. 使弯曲L20cutter bit 刀头, 刀片L3cyanide[sainaid] n.氰化物L2Ddash [d] n. 破折号L6daylight [deilait] n. 板距L12decline[diklain] v.下落,下降,减少, L3,9 deform[dif:m] v. (使)变形L1,3 demonstrate[demstreit ] v证明L21 depict[dipikt ] vt 描述L18deposite [dipzit] vt. 放置L20 depression[dipren] n. 凹穴L12 descend [disent] v. 下降L20 desirable[dizairbl] a. 合适的L2 detail [diteil] n.细节,详情L17 deterioration[ditiri:rein] n. 退化, 恶化L12determine[dit:min] v.决定L16 diagrammmatic[daigrmtik].a.图解的,图表的L10dictate[dikteit] v. 支配L12die[dai] n.模具, 冲模, 凹模L2 dielectric[daiilektrik] n. 电介质L10die-set 模架L19digital [diditl ] n.数字式数字, a.数字的L3,6dimensional[dddimennl] a. 尺寸的, 空间的L3discharge[dista:d] n.v. 放电, 卸下, 排出L3discharge[dista:d] v.卸下L8discrete [discri:t] adj. 离散的,分立的L7 dislodge[disld] v. 拉出, 取出L12 dissolution[dislu:n] n.结束L9distinct [distikt] a.不同的,显著的L6 distort [disd:t] vt. 扭曲L20distort[dist:t] vt. (使)变形, 扭曲L1 distributed system 分布式系统L9 dowel [daul] n. 销子L19dramaticlly [drmtikli] adv. 显著地L7 drastic [drstik] a.激烈的L17 draughting[dra:fti] n. 绘图L16 draughtsman[drftsmn] n. 起草人L16drawing[dr:i] n. 制图L11drill press 钻床L8drum [drm] n.鼓轮L8dual [dju:l] adv. 双的,双重的L18 ductility [dktiliti ] n.延展性L1,21 dynamic [dainmik ] adj 动力的L6Eedge [ed] n .边缘L20e.g.(exempli gratia) [拉] 例如L12 ejector [idekt] n.排出器, L18ejector plate 顶出板L16ejector rob 顶杆L5elasticity[ilstisiti] n.弹性L1electric dicharge machining 电火花加工L3electrical discharge machining电火花加工L10electrochemical machining 电化学加工L3electrode[ilektrud] n. 电极L10electro-deposition 电铸L4 elementary [elmentri] adj.基本的L2eliminate[ilimineit] vt. 消除, 除去L10 elongate[ilet] vt. (使)伸长, 延长L1 emerge [im:d] vi. 形成, 显现L20 emphasise[emfsaiz] vt. 强调L4 endeavour[endev] n. 尽力L17 engagement[ineidment] n. 约束, 接合L22enhance[inhns] vt. 提高, 增强L9 ensure [inu] vt. 确保,保证L17 envisage[invizid] vt.设想L15erase[ireis] vt. 抹去, 擦掉L16 evaluation[ivljuein] n. 评价, 估价L1 eventually[ivntuli ] adv.终于L21 evolution[evlu:n] n.进展L16 excecution[eksikju:n] n. 执行, 完成L9 execute [ekskju:t] v. 执行L8exerte [iz:t] vt. 施加L20experience[ikspirins] n. 经验L16 explosive[iksplusiv]adj.爆炸(性)的L22 extend[ekstend] v. 伸展L2external[ekst:nl] a. 外部的L5,11 extract[ekstrkt] v. 拔出L14extreme[ikstri:m] n. 极端L13 extremely[ikstri:mli] adv. 非常地L12 extremity[ikstmiti] n. 极端L13 extrusion[ekstru:n] n. 挤压, 挤出L3 FF (Fahrenheit)[frnhait] n.华氏温度L2 fabricate [fbrikeit] vt.制作,制造L7 facilitate [fsiliteit] vt. 帮助L6facility[fsiliti] n. 设备L4facing[feisi] n. 端面车削L5fall within 属于, 适合于L15fan[fn] n.风扇L7far from 毫不, 一点不, 远非L9 fatigue[fti] n.疲劳L1feasible [fi:zbl] a 可行的L18feature [fi:t] n.特色, 特征L7,17feed[fi:d] n.. 进给L5feedback [fi:dbk] n. 反馈L8female[fi:meil] a. 阴的, 凹形的L11 ferrule[ferl] n. 套管L14file system 文件系统L9fitter[fit] n.装配工, 钳工L4fix[fiks] vt. 使固定, 安装, vi. 固定L11 fixed half and moving half 定模和动模L11flat-panel technology 平面(显示)技术L9flexibility[fleksibiliti] n. 适应性, 柔性L9 flexible[fleksbl] a. 柔韧的L13flow mark 流动斑点L13follow-on tool 连续模L18foregoing [f:ui]adj. 在前的,前面的L8foretell[f:tell] vt. 预测, 预示, 预言L9 forge[f:d] n. v. 锻造L3forming[f:mi] n. 成型L3four screen quadrants 四屏幕象限L9 fracture[frkt] n.破裂L21free from 免于L21Ggap[p] n. 裂口, 间隙L10gearbox[ibks] n.齿轮箱L5general arrangement L16govern[vn] v.统治, 支配, 管理L13grain [rein] n. 纹理L20graphic [rfik] adj. 图解的L6grasp [rsp] vt. 抓住L8grid[rid] n. 格子, 网格L16grind[raind] v. 磨, 磨削, 研磨L3 grinding [raindi] n. 磨光,磨削L3,20 grinding machine 磨床L5gripper[rip] n. 抓爪, 夹具L9groove[ru:v] n. 凹槽L12guide bush 导套L5guide pillar 导柱L5guide pillars and bushes 导柱和导套L11Hhandset[hndset] n. 电话听筒L4 hardness[ha:dnis] n.硬度L1,2 hardware [ha:dw] n. 硬件L6 headstock[hedstk] n.床头箱, 主轴箱L5 hexagonal[heksnl] a. 六角形的, 六角的L11hindrance[hindrns] n.障碍, 障碍物L11 hob[hb] n. 滚刀, 冲头L4hollow-ware 空心件L21horizontal[hrizntl] a. 水平的L16hose[huz] n. 软管, 水管L13 hyperbolic [haipblik] adj.双曲线的L7Ii.e. (id est) [拉] 也就是L12identical[aidentikl] a同样的L16 identify [aidentifai] v. 确定, 识别L7 idle [aidl] adj.空闲的L8immediately[imi:djtli] adv. 正好, 恰好L12impact[impkt] n.冲击L1impart [impa:t] v.给予L11,17 implement [implimnt] vt 实现L6 impossibility[impsbiliti] n.不可能L21 impression[impren] n. 型腔L11in contact with 接触L1in terms of 依据L1inasmuch (as)[inzmt] conj.因为, 由于L3 inch-to-metric conversions 英公制转换L7inclinable [inklainbl] adj. 可倾斜的L20inclusion [inklun] n. 内含物L19 inconspicuous[inknspikjus] a. 不显眼的L14incorporate [ink:preit] v 合并,混合L17 indentation[indentein ] n.压痕L1 indenter[indent] n. 压头L1 independently[indipeinntli] a. 独自地, 独立地L16inevitably[inevitbli] ad. 不可避免地L14 inexpensive[inikspensiv]adj. 便宜的L2 inherently [inhirntli] adv.固有的L7 injection mould 注塑模L11injection[indekn] n. 注射L11in-line-of-draw 直接脱模L14insert[ins:t] n. 嵌件L16inserted die 嵌入式凹模L19 inspection[inspekn] n.检查,监督L9 installation[instlein] n. 安装L10 integration [intirein] n.集成L6 intelligent[intelidnt]a. 智能的L9 intentinonally [intennli] adv 加强地,集中地L17interface [intfeis] n.. 界面L6internal[int:nl] a. 内部的L1,5 interpolation [intplein] n.插值法L7 investment casting 熔模铸造L4 irregular [iregjul] adj. 不规则的,无规律L17irrespective of 不论, 不管L11 irrespective[irispektiv] a. 不顾的, 不考虑的L11issue [isju] vt. 发布,发出L6Jjoint line 结合线L14Kkerosene[kersi:n] n.煤油L10 keyboard [ki:b:d ] n. 健盘L6knock [nk] v 敲,敲打L17Llance [la:ns] v. 切缝L19lathe[lei] n. 车床L4latitude [ltitju:d] n. 自由L17lay out 布置L13limitation[limitein] n.限度,限制,局限(性)L3local intelligence局部智能L9locate [lukeit] vt. 定位L18logic [ldik] n. 逻辑L7longitudinal[lndtju:dinl] a. 纵向的L5 longitudinally[lndtju:dinl] a. 纵向的L13 look upon 视作, 看待L17lubrication[lju:brikein ] n.润滑L21Mmachine shop 车间L2machine table 工作台L8machining[mi:ni] n. 加工L3made-to-measure 定做L15 maintenance[meintinns] n.维护,维修L7 majority[mda:riti] n.多数L21make use of 利用L2male[meil] a. 阳的, 凸形的L11 malfunction[mlfn] n. 故障L9mandrel[mdtil] n.心轴L22 manifestation[mnifstein] n. 表现, 显示L9massiveness [msivnis ] 厚实,大块L19measure[me] n. 大小, 度量L1 microcomputer 微型计算机L9 microns[maikrn] n.微米L10 microprocessor 微处理器L9mild steel 低碳钢L17milling machine 铣床L4mineral[minrl] n.矿物, 矿产L2 minimise[minimaiz] v.把···减到最少, 最小化L13minute[minit] a.微小的L10mirror image 镜像L16mirror[mir] n. 镜子L16MIT (Massachusetts Institute of Technology) 麻省理工学院L7 moderate[mdrit]adj. 适度的L1,2 modification [mdifikein ] n. 修改, 修正L6modulus[mdjuls] n.系数L1mold[muld] n. 模, 铸模, v. 制模, 造型L3monitor [mnit ] v. 监控L6 monograph[mnra:f] n. 专著L4more often than not 常常L20 motivation[mutivein] n. 动机L9mould split line 模具分型线L12 moulding[mudi] n. 注塑件L5,11move away from 抛弃L17multi-imprssion mould 多型腔模L12 Nnarrow[nru] a. 狭窄的L12NC (numerical control ) 数控L7 nevertheless[nevles] conj.,adv.然而,不过L11nonferrous[nnfers] adj.不含铁的, 非铁的L2normally[n:mli]adv.通常地L22novice[nvis] n. 新手, 初学者L16 nozzle[nzl] n. 喷嘴, 注口L12 numerical [njumerikl] n. 数字的L6Oobjectionable [bdekbl] adj. 有异议的,讨厌的L17observe[bz:v] vt. 观察L2obviously [bvisli] adv 明显地L17off-line 脱机的L6on-line 联机L9operational [preinl] adj.操作的, 运作的L8opportunity[ptju:niti] n. 时机, 机会L13 opposing[puzi] a.对立的, 对面的L12 opposite[pzit] n. 反面L1 a.对立的,对面的L12optimization [ptimaizein] n.最优化L6 orient [:rint] vt. 确定方向L8orthodox [:dks] adj. 正统的,正规的L19 overall[uvr:l] a.全面的,全部的L8,13 overbend v.过度弯曲L20overcome[uvkm] vt.克服, 战胜L10 overlaping[uvlpi] n. 重叠L4 overriding[uvraidi] a. 主要的, 占优势的L11Ppack[pk] v. 包装L2package [pkid] vt.包装L7pallet [plit] n.货盘L8panel [pnl] n.面板L7paraffin[prfin] n. 石蜡L10 parallel[prlel] a.平行的L5 penetration[penitrein ] n.穿透L1 peripheral [prifrl] adj 外围的L6 periphery [prifri] n. 外围L18 permit[pmit] v. 许可, 允许L16 pessure casting 压力铸造L4 pillar[pil] n. 柱子, 导柱L5,17pin[pin] n. 销, 栓, 钉L5,17pin-point gate 针点式浇口L12 piston [pistn] n.活塞L1plan view 主视图L16plasma[plzm] n. 等离子L9 plastic[plstik] n. 塑料L3platen[pltn] n. 压板L12plotter[plt] n. 绘图机L9plunge [plnd] v翻孔L18plunge[plnd] v.投入L2plunger [plnd ] n. 柱塞L19 pocket-size 袖珍L9portray[p:trei] v.描绘L21pot[pt] n.壶L21pour[p:] vt. 灌, 注L22practicable[prktikb] a. 行得通的L14 preferable[prefrbl] a.更好的, 更可取的L3preliminary [priliminri] adj 初步的,预备的L19press setter 装模工L17press[pres] n.压,压床,冲床,压力机L2,8 prevent [privent] v. 妨碍L20 primarily[praimrili] adv.主要地L4 procedure[prsi:d] n.步骤, 方法, 程序L2,16productivity.[prudktiviti] n. 生产力L9 profile [prufail] n.轮廓L10 progressively[prresiv] ad.渐进地L15 project[prdekt] n.项目L2project[prdekt] v. 凸出L11 projection[prdekn] n.突出部分L21 proper[prp] a. 本身的L10property[prpti] n.特性L1prototype [pruttaip] n. 原形L7 proximity[prksimiti] n.接近L9prudent[pru:dnt] a. 谨慎的L16 punch [pnt] v. 冲孔L3punch shapper tool 刨模机L17 punch-cum-blanking die 凹凸模L18 punched tape 穿孔带L3purchase [p:ts] vt. 买,购买L6push back pin 回程杆L5 pyrometer[painmit] n. 高温计L2Qquality[kwaliti] n. 质量L1,3 quandrant[kwdrnt] n. 象限L9 quantity [kwntiti] n. 量,数量L17 quench[kwent] vt. 淬火L2Rradial[reidil] adv.放射状的L22ram [rm] n 撞锤. L17rapid[rpid]adj. 迅速的L2rapidly[rpidli]adv. 迅速地L1raster[rst] n. 光栅L9raw [r:] adj. 未加工的L6raw material 原材料L3ream [ri:m] v 铰大L17reaming[ri:mi] n. 扩孔, 铰孔L8recall[rik:l] vt. 记起, 想起L13recede [risi:d] v. 收回, 后退L20 recess [rises] n. 凹槽,凹座,凹进处L4,18 redundancy[ridndnsi] n. 过多L9re-entrant 凹入的L12refer[rif:] v. 指, 涉及, 谈及L1,12 reference[refrns] n.参照,参考L21 refresh display 刷新显示L9register ring 定位环L11register[redst] v. 记录, 显示, 记数L2 regrind[ri:aind](reground[ri:gru:nd]) vt. 再磨研L12relative[reltiv] a. 相当的, 比较的L12 relay [ri:lei] n. 继电器L7release[rili:s] vt. 释放L1relegate[relgeit] vt. 把··降低到L9 reliability [rilaibiliti] n. 可靠性L7relief valves 安全阀L22relief[rili:f] n.解除L22relieve[rili:v ]vt.减轻, 解除L2 remainder[rimeind] n. 剩余物, 其余部分L4removal[rimu:vl] n. 取出L14remove[rimu:v] v. 切除, 切削L4 reposition [ripzin] n.重新安排L17 represent[reprizent] v 代表,象征L11 reputable[repjutbl] a. 有名的, 受尊敬的L15reservoir[rezvwa: ] n.容器, 储存器L22 resident[rezidnt] a. 驻存的L9resist[rizist] vt.抵抗L1resistance[rizistns] n.阻力, 抵抗L1 resolution[rezlu:n] n. 分辨率L9 respective[rispektiv] a.分别的,各自的L11respond[rispnd] v.响应, 作出反应L9 responsibility[rispnsbiliti] n.责任L13 restrain[ristrein]v.抑制L21restrict [ristrikt] vt 限制,限定L18 restriction[ristrikn] n. 限制L12retain[ritein] vt.保持, 保留L2,12 retaining plate 顶出固定板L16reveal [rivil] vt.显示,展现L17reversal [rivsl] n. 反向L1,20right-angled 成直角的L20rigidity[rididiti] n. 刚度L1rod[rd] n. 杆, 棒L1,5rotate[ruteit] vt.(使)旋转L5rough machining 粗加工L5rough[rf] a. 粗略的L5,21routine [ru:ti:n] n. 程序L7rubber[rb] n.橡胶L3,22runner and gate systems 流道和浇口系统L11Ssand casting 砂型铸造L3 satisfactorily[stisfktrili] adv. 满意地L1 saw[a:] n. 锯子L4scale[skeil]n. 硬壳L2score[sk:] v. 刻划L14scrap[skrp] n.废料, 边角料, 切屑L2,3 screwcutting 切螺纹L4seal[si:l] vt.密封L22secondary storage L9section cutting plane 剖切面L16secure[sikju] v.固定L22secure[sikju] vt.紧固,夹紧,固定L5,22 segment[semnt] v. 分割L10sensitive[sensitiv]a.敏感的L1,7 sequence [si:kwns] n. 次序L6 sequential[sikwenl] a.相继的L16 seriously[sirisli] adv.严重地L1 servomechanism [s:vmeknizm] n.伺服机构L7Servomechanism Laboratoies 伺服机构实验室L7servomotor [s:vmut] n.伺服马达L8 setter [set] n 安装者L17set-up 机构L20sever [sev] v 切断L17severity [siveriti] n. 严重L20shaded[did] adj.阴影的L21shank [k] n. 柄. L17shear[i]n.剪,切L1shot[t] n. 注射L12shrink[rik] vi. 收缩L11side sectional view 侧视图L16signal [sinl] n.信号L8similarity[similriti] n.类似L15 simplicity[simplisiti] n. 简单L12 single-point cutting tool 单刃刀具L5 situate[sitjueit] vt. 使位于, 使处于L11 slide [slaid] vi. 滑动, 滑落L20 slideway[slaidwei] n. 导轨L5slot[slt] n. 槽L4slug[sl] n. 嵌条L12soak[suk] v. 浸, 泡, 均热L2software [sftw] n. 软件L6solid[slid] n.立体, 固体L9solidify[slidifai] vt.vi. (使)凝固, (使)固化L13solution[slu:n] n.溶液L2 sophisiticated [sfistikeitid] adj.尖端的,完善的L8sound[saund] a. 结实的, 坚固的) L1 spark erosion 火花蚀刻L10spindle[spindl] n. 主轴L5,8spline[splain] n.花键L4split[split] n. 侧向分型, 分型L12,14spool[spu:l] n. 线轴L14springback n.反弹L20spring-loaded 装弹簧的L18sprue bush 主流道衬套L11sprue puller 浇道拉杆L12square[skw] v. 使成方形L4stage [steid] n. 阶段L16,19 standardisation[stnddaizein] n. 标准化L15startling[sta:tli] a. 令人吃惊的L10 steadily[stedli ] adv. 稳定地L21step-by-step 逐步L8stickiness[stikinis] n.粘性L22 stiffness[stifnis] n. 刚度L1stock[stk] n.毛坯, 坯料L3storage tube display 储存管显示L9 storage[st:rid] n. 储存器L9 straightforward[streitf:wd]a.直接的L10 strain[strein] n.应变L1strength[stre] n.强度L1stress[stres] n.压力,应力L1stress-strain应力--应变L6stretch[stret] v.伸展L1,21strike [straik] vt. 冲击L20stringent[strindnt ] a.严厉的L22 stripper[strip] n. 推板L15stroke[strouk] n. 冲程, 行程L12 structrural build-up 结构上形成的L11 sub-base 垫板L19subject[sbdikt] vt.使受到L21 submerge[sbm:d] v.淹没L22 subsequent [sbsikwent] adj. 后来的L20subsequently [sbsikwentli] adv. 后来, 随后L5substantial[sbstnl] a. 实质的L10 substitute [sbstitju:t] vt. 代替,.替换L7 subtract[sbtrkt] v.减, 减去L15 suitable[su:tbl] a. 合适的, 适当的L5 suitably[su:tbli] ad.合适地L15sunk[sk](sink的过去分词) v. 下沉, 下陷L11superior[spiri] adj.上好的L22 susceptible[sseptbl] adj.易受影响的L7sweep away 扫过L17symmetrical[simetrikl] a. 对称的L14 synchronize [sikrnaiz] v.同步,同时发生L8Ttactile[tktail] a. 触觉的, 有触觉的L9 tailstock[teilstk] n.尾架L5tapered[teipd] a. 锥形的L12tapping[tpi] n. 攻丝L8technique[tekni:k] n. 技术L16 tempering[tempr] n.回火L2tendency[tendnsi] n. 趋向, 倾向L13 tensile[tensail] a.拉力的, 可拉伸的L2拉紧的, 张紧的L1tension [tenn] n.拉紧,张紧L1terminal [t:mnl ] n. 终端机L6 terminology[t:minldi ] n. 术语, 用辞L11theoretically [i:retikli ] adv.理论地L21 thereby[bai] ad. 因此, 从而L15 thermoplastic[:muplstik] a. 热塑性的, n. 热塑性塑料L3thermoset[:mset] n.热固性L12 thoroughly[ruli] adv.十分地, 彻底地L2 thread pitch 螺距L5thread[red] n. 螺纹L5thrown up 推上L17tilt [tilt] n. 倾斜, 翘起L20tolerance [tlrns] n..公差L17tong[t] n. 火钳L2tonnage[tnid] n.吨位, 总吨数L3tool point 刀锋L3tool room 工具车间L10toolholder[tu:lhuld] n.刀夹,工具柄L5 toolmaker [tu:lmeik] n 模具制造者L17 toolpost grinder 工具磨床L4toolpost[tu:lpust] n. 刀架L4torsional [t:nl] a扭转的 . L1 toughness[tfnis] n. 韧性L2trace [treis] vt.追踪L7tracer-controlled milling machine 仿形铣床L4transverse[trnsv:s] a. 横向的L5tray [trei] n. 盘,盘子,蝶L19treatment[tri:tmnt] n.处理L2 tremendous[trimends] a. 惊人的, 巨大的L9trend [trend] n.趋势L7trigger stop 始用挡料销L17tungsten[tstn] n.钨L10turning[t:ni] n.车削L4,5twist[twist ] v.扭曲,扭转L1two-plate mould 双板式注射模L12Uultimately[ltimitli] adv终于. L6 undercut moulding 侧向分型模L14 undercut[ndkt] n. 侧向分型L14 undercut[ndkt] n.底切L12underfeed[ndfi:d] a, 底部进料的L15 undergo[ndu] vt.经受L1underside[ndsaid] n 下面,下侧L11 undue[ndju:] a.不适当的, 过度的L4,10 uniform[ju:nif:m] a.统一的, 一致的L12 utilize [ju:tilaiz] v 利用L17Utopian[jutupin] adj.乌托邦的, 理想化的L21Vvalve[vlv] n.阀L22vaporize[veipraiz] vt.vi. 汽化, (使)蒸发L10variation [vriein] n. 变化L20various [vris] a.不同的,各种的L1,20 vector feedrate computation 向量进刀速率计算L7vee [vi:] n. v字形L20velocity[vilsiti] n.速度L1versatile[vstail] a.多才多艺的,万用的L5,8vertical[v:tikl] a. 垂直的L16via [vai] prep.经,通过L8vicinity[vsiniti] n.附近L13viewpoint[vju:pint] n. 观点L4Wwander[wnd] v. 偏离方向L13warp[w:p] v. 翘曲L2washer [w] n. 垫圈L18wear [w] v.磨损L7well line 结合线L13whereupon [hwrpn] adv. 于是L19 winding [waindi] n. 绕, 卷L8with respect to 相对于L1,5 withstand[wistnd] vt.经受,经得起L1 work[w:k] n. 工件L4workstage 工序L19wrinkle[rikl] n.皱纹vt.使皱L21Yyield[ji:ld] v. 生产L9Zzoom[zu:] n. 图象电子放大L9 glossary- - - - -- -。

北斗定位代码

'目标运动轨迹显示Private Sub baidu_trace_Click()' WebBrowser1.Document.parentWindow.execScript "map.panTo(new BMap.Point( " & center_lng & "," & center_lat & "))", "javascript"' WebBrowser1.Document.parentWindow.execScript "map.addOverlay(new BMap.Marker(new BMap.Point( " & center_lng & "," & center_lat & ")))", "javascript"Dim a(100) As StringDim b(100) As String'实时定位时用到距离计算Dim lng1 As DoubleDim lat1 As DoubleDim lng2 As DoubleDim lat2 As DoubleDim lenght As DoubleDim i, p As Integeri = 1Open "C:\\Users\\Administrator\\Desktop\\test_complete_six\\test_map_data.txt" For Input As #1lng1 = center1_lng.Textlat1 = center1_lat.Textr = CDbl(Text3_R.Text)On Error GoTo hDo While Not EOF(1)'读取一行数据到s中，现在s是一个字符串Line Input #1, sp = Len(s)longitude = Mid(s, 1, 10)'读取字符串前10个字符a(i) = Mid(s, 1, 10)lng2 = a(i)'读取字符后八个字符b(i) = Mid(s, 12, 20)lat2 = b(i)WebBrowser1.Document.getElementsByTagName("input")("longitude").Value = a(i)WebBrowser1.Document.getElementsByTagName("input")("latitude").Value = b(i)If a(i) <> "" ThenWebBrowser1.Document.parentWindow.execScript "map.addOverlay(new BMap.Marker(new BMap.Point( " & a(i) & "," & b(i) & ")))"WebBrowser1.Document.parentWindow.execScript "map.panTo(new BMap.Point( " & a(i) & "," & b(i) & "))", "javascript"length = distance(lng1, lat1, CDbl(lng2), CDbl(lat2))If length < r ThenShape1.FillColor = vbGreenElseShape1.FillColor = vbRedEnd IfEnd If'========================i = i + 1Looph:Close #1End Sub'点击删除所有的标记点Private Sub baidu_delete_Click()Dim a(100) As StringDim b(100) As StringDim i, p As Integeri = 1Open "C:\\Users\\Administrator\\Desktop\\test_complete_six\\test_map_data.txt" For Input As #1On Error GoTo hDo While Not EOF(1)'读取一行数据到s中，现在s是一个字符串Line Input #1, sp = Len(s)longitude = Mid(s, 1, 10)'读取字符串前10个字符a(i) = Mid(s, 1, 10)'读取字符后八个字符b(i) = Mid(s, 12, 20)WebBrowser1.Document.getElementsByTagName("input")("longitude").Value = a(i)WebBrowser1.Document.getElementsByTagName("input")("latitude").Value = b(i)'====点击按钮============Dim vTag, k '定义变量For Each vTag In WebBrowser1.Document.All '用for each in查找所有元素If UCase(vTag.tagName) = "INPUT" Then '锁定iput标签If vTag.Type = "button" And vTag.Value = "删除" Then vTag.Click '找到标签下的按钮End IfNext'========================i = i + 1Looph:Close #1End Sub'=====================计算两点间的距离==============================Private Sub baidu_juli_jisuan_Click()Dim lng1 As DoubleDim lat1 As DoubleDim lng2 As DoubleDim lat2 As Doublelng1 = start_jingdu.Textlat1 = start_weidu.Textlng2 = end_jingdu.Textlat2 = END_WEIDU.Textlength = distance(lng1, lat1, lng2, lat2)JULI.Text = lengthWebBrowser1.Document.getElementsByTagName("input")("longitude1").Value = lng1WebBrowser1.Document.getElementsByTagName("input")("latitude1").Value = lat1WebBrowser1.Document.getElementsByTagName("input")("longitude1").Value = lng2WebBrowser1.Document.getElementsByTagName("input")("latitude1").Value = lat2Dim vTag, k '定义变量For Each vTag In WebBrowser1.Document.All '用for each in查找所有元素If UCase(vTag.tagName) = "INPUT" Then '锁定iput标签If vTag.Type = "button" And vTag.Value = "计算" Then vTag.Click '找到标签下的按钮End IfNextEnd Sub'===================================加载地图=================================== Private Sub Form_Load()WebBrowser1.Navigate App.Path & "\BaiduMap.htm"baidu_center_set.Enabled = Falseshi_ding_wei.Enabled = Falsebaidu_trace.Enabled = Falsebaidu_delete.Enabled = Falsebaidu_tishi.Enabled = Falsebaidu_juli_jisuan.Enabled = Falsebaidu_short_time.Enabled = Falsebaidu_zuiduan_lujing.Enabled = Falsebaidu_bikaisp.Enabled = FalseEnd Sub'==========================label提示信息======================================== Private Sub Label1_Click()Dim oWindowSet oWindow = WebBrowser1.Document.parentWindowoWindow.confirm "范围设定请不要超过10万米"End Sub'==========================实时定位系统==================================== Private Sub shi_ding_wei_Click()Dim a(100) As StringDim b(100) As StringDim i, p As Integeri = 1Dim lng1 As DoubleDim lng2 As DoubleDim lat1 As DoubleDim lat2 As DoubleDim r As DoubleOpen "C:\\Users\\Administrator\\Desktop\\test_complete_six\\test_map_data.txt" For Input As #1lng1 = center1_lng.Textlat1 = center1_lat.Textr = CDbl(Text3_R.Text)On Error GoTo hDo While Not EOF(1)'读取一行数据到s中，现在s是一个字符串Line Input #1, sp = Len(s)longitude = Mid(s, 1, 10)'读取字符串前10个字符a(i) = Mid(s, 1, 10)lng2 = CDbl(a(i))'读取字符后八个字符b(i) = Mid(s, 12, 20)lat2 = CDbl(b(i))If a(i) <> "" ThenWebBrowser1.Document.getElementsByTagName("input")("longitude").Value = a(i)WebBrowser1.Document.getElementsByTagName("input")("latitude").Value = b(i)'是否报警length = distance(lng1, lat1, CDbl(lng2), CDbl(lat2))If length < r ThenShape1.FillColor = vbGreenElseShape1.FillColor = vbRedEnd If'====点击按钮============Dim vTag, k '定义变量For Each vTag In WebBrowser1.Document.All '用for each in查找所有元素If UCase(vTag.tagName) = "INPUT" Then '锁定iput标签If vTag.Type = "button" And vTag.Value = "查询" Then vTag.Click '找到标签下的按钮End IfNextEnd If'========================i = i + 1Looph:Close #1End Sub'加载地图前是所有涉及到百度地图的按钮全部失效============================================Private Sub WebBrowser1_DocumentComplete(ByVal pDisp As Object, URL As Variant) '地图加载完成前按钮无效WebBrowser1.Document.body.Scroll = "no"baidu_center_set.Enabled = Trueshi_ding_wei.Enabled = Truebaidu_trace.Enabled = Truebaidu_delete.Enabled = Truebaidu_tishi.Enabled = Truebaidu_juli_jisuan.Enabled = Truebaidu_short_time.Enabled = Truebaidu_zuiduan_lujing.Enabled = Truebaidu_bikaisp.Enabled = TrueEnd Sub'==========================两点距离计算================================================Function distance(lng1 As Double, lat1 As Double, lng2 As Double, lat2 As Double)Dim Radius As DoubleDim DisA As DoubleDim DisB As DoubleDim DisC As DoubleDim Dpwr2 As DoubleDim DisD As DoubleDim Long1 As DoubleDim Lati1 As DoubleDim Long2 As DoubleDim Lati2 As DoubleDim DeltaLng As DoubleDim DeltaLat As DoubleDim X As DoubleConst EarthRadius = 6371000 'METERConst PI = 3.14159265358979Long1 = PI * lng1 / 180 '转换为弧度Long2 = PI * lng2 / 180Lati1 = PI * lat1 / 180Lati2 = PI * lat2 / 180DeltaLng = Long2 - Long1DeltaLat = Lati2 - Lati1Radius = Cos(Lati1)DisA = Radius * Sin(DeltaLng)DisB = Radius * (1 - Cos(DeltaLng))DisC = DeltaLatDpwr2 = DisA ^ 2 + DisB ^ 2 + DisC ^ 2 - 2 * DisB * DisC * Sin((Lati1 + Lati2) / 2) '余弦定理，cos已转为sinDisD = Sqr(Dpwr2)X = DisD / 2distance = Asin(X) * 2 * EarthRadiusEnd Function。

飞兆半导体推出全新双路集成电磁螺线管驱动器等

飞兆半导体推出全新双路集成电磁螺线管驱动器等飞兆半导体推出全新双路集成电磁螺线管驱动器飞兆半导体公司(FairchildSemiconductor)推出全新双集成电磁螺线管驱动器(DISD)解决方案FDMS2380，为汽车控制系统设计人员带来更可靠的螺线管控制运作性能，以及节省电路板空间。

FDMS2380是智能化并带有双独立通道的半桥驱动器，下桥臂驱动专为感性负载而设计的内置电流再循环和退磁电路，并具备其它集成功能包括过压、过流和过热电路，用于保护器件和诊断反馈引脚。

FDMS2380采用节省空间的8mm×12mm PQFN封装。

飞兆半导体的FDMS2380采用多晶片方式，在节省空间的单一封装中集成多个控制和功率半导体晶片，从而提供针对汽车和工业螺线管应用而优化的紧凑及高可靠性设计解决方案。

FDMS2380的主要特性包括：采用PQFN封装的独立双通道，较之于同级的单通道和分立式解决方案，可在较小的电路板空间中提供更多的功能诊断信号功能提供更好的故障处理和保护内置过流，过压、过热诊断功能，以防止器件故障具有扩展工作电压范围，无需附加保护功能即可处理汽车功率总线飞兆半导体拥有独特的先进工艺和封装技术，配合其将功率模拟，功率分立和光电功能集成到创新封装中的能力，使公司得以针对汽车电子市场开发出各种高能效的解决方案。

飞兆半导体拥有业界最广泛全面的产品组合，功耗范围从1w～1200w以上，能够最大限度地提高当前汽车电子应用的能源效率，涵盖功率管理、车身控制、电机控制、点火和引擎管理，以及电动和混合动力电动汽车系统。

FDMS2380采用无铅(Pb-free)端子，潮湿敏感度符合IPc／JEDECJ-STD-020标准对无铅回流焊的要求。

所有飞兆半导体产品均设计满足欧盟有害物质限用指令(RoHS)的要求。

奥地利微电子推出高速、高分辨率、磁线性、运动编码器IC AS5305奥地利微电子公司发布了一款磁线性运动编码器IC AS5305，该产品专为包括工业驱动、x －y平台或电机等应用在内的线性运动和离轴旋转测量而设计。

初一下册英语单词：Unit7

初一下册英语单词：Unit7初一下册英语单词：Unit7引导语：英语是最多国家使用的官方语言，英语也是世界上最广泛的第一语言。

学好英语对我们来说至关重要。

然而英语学习是一个循序渐进的过程。

它的首要就是对单词的积累。

下面是YJBYS的店铺为大家找到的初一下册英语单词：Unit7，希望能帮到大家!初一下册英语单词：Unit7 篇1rain v.下雨n.雨水windy adj.多风的cloudy adj多云的sunny adj晴朗的snow v.下雪；雪Snowweather n.天气cook v.做饭bad adj坏的；糟的park n.公园message n.信息；消息take a message捎个口信；传话him pron.他(he的宾格)could v.能；可以back adj.回来；回原处call(sb)back回电话prkblem n.困难；难题again adj.再一次；又一次dry adj.干燥的cold adj寒冷的；冷的hot adj热的warm adj温暖的visit v.拜访；参观Canada n.加拿大summer n.夏天；夏季sit v.坐juice n.果汁；饮料soon adv.不久；很快vacation n.假期on(a)vacation度假hard adv.努力地；困难的Europe n.欧洲mountain n.高山country n.国；国家skate v.滑冰snowy adj.下雪的winter n.冬天；冬季Russian adj.俄罗斯的；俄罗斯人；俄语snowman n.雪人rainy adj.阴雨的；多雨的Joe乔(男名)Jeff杰夫(男名)Moscow莫斯科Toronto多伦多Boston波士顿初一下册英语单词：Unit7 篇2guitar n.吉他sing v.唱；唱歌swim v.游泳dance v.跳舞；舞蹈draw v.画chess n.国际象棋play chess 下国际象棋speak v.说；说话speak English 说英语join v.参加；加入club n.俱乐部；社团be good at… 擅长于……tell v. n讲述；告诉story n故事；小说write v.写作,写字show n.演出；表演 v.展示；or conj.或者talk v. n说话；谈话talk to … 跟……说kungfu n.(中国)功夫drum n.鼓play the drums 敲鼓piano n.钢琴play the piano 弹钢琴violin n.小提琴play the violin 拉小提琴also adv也；而且people n人；人们home n 家,活动本部.adv到家；在家be good with… 善于应付……的；对……有办法make v.使成为；制造make friends 结交朋友today adv.在今天help (sb) with sth 在某方面帮助(某人) center n(=centre)中心,中央weekend. n.周末on the weekend. (在)周末teach v教,讲授musician n.音乐家Lisa 莉萨(女名)Jill 吉尔(女名)Peter 彼得(男名)七年级下册Unit 2英语单词Unit2 What time do you go to school up adv 向上get up 起床；站起dress v.穿衣服 n.连衣裙get dressed 穿上衣服brush v.刷刷净 n.刷子tooth n.(pl. teeth)牙齿shower n.v淋浴；淋浴器(间)take a shower 洗淋浴usually adv.通常地；一般地forty num.四十Wow intery.(表示惊奇或敬佩)哇；呀never adv从不；绝不early adv. adj早(的)fifty num.五十job n.工作；职业work n.& v.工作station n.电视台；车站radio station 广播电台o'clock adv.(表示整点)…点钟night n.晚上；夜晚funny adj奇怪的；滑稽好笑的exercise v.n锻炼；练习on weekends. (在)周末best adj.& adv.最好的(地)half n.一半,半数past prep.晚于；过(时间)adj.过去的quarter n.一刻钟；四分之一homework n.家庭作业do (one’s) homework 做作业run v 跑；奔clean v打扫；弄干净；adj干净的walk n.&v.行走；步行take a walk 散步走一走quickly adv很快地either adv或者；也(用在否定词组后) Either…or ……要么……要么……；或者……或者……lot pron. 大量；许多lots of 大量；许多sometimes adv.有时taste v.有…的味道；品尝n.味道；滋味Life n.生活,生命Rick 里克(男名)Jim 吉姆(男名)Scott 斯科特(男名)Tony 托尼(男名)七年级下册Unit 3英语单词Unit3 How do you get to schooltrain n.火车bus n.公交车subway n.地铁take the subway 乘地铁ride v骑 n旅行bike n.自行车aride a bike 骑自行车sixty num.六十seventy num.七十eighty num.八十ninety num.九十hundred num.一百minute n.分钟far adv.&adj远；远的kilometer n.公里new adj.新的；刚出现的every adj.每一；每个every day 每天by prep.(表示方式)乘(交通工具) by bike 骑自行车drive v.开车car n.小汽车；轿车live v.居住；生活stop n.车站；停止think of 认为cross v.横过；越过river n.河；江many adj.&pron.许多village n.村庄；村镇between prep.介于…之间between…and… 在……和……之间bridge n.桥boat n.小船Ropeway n.索道year n.年；岁afraid adj.害怕；惧怕like prep.像；怎么样leave v.离开dream n.梦想；睡梦 v.做梦true adj.真的；符合事实的come true 实现；成为现实Dave 戴夫(男名)初一下册英语单词：Unit7 篇3prepare [pr'per]v.预备；准备exam[ɡ'zm] 考试available['velbl] 可得到的；有空的；hang[h] 悬挂；(使)低垂until[n'tl] 直到 ... 的时候；直到…为止catch[kt] 赶上；抓住；捕捉invite [n'vat] 邀请accept[k'sept] 接受；refuse [r'fjuz] 拒绝invitation [nv'ten] 邀请；邀请函reply [r'pla] 回答，回复forward['frwrd] 转交；发送，向前的[d'lit] 删除preparation [prep'ren]准备，准备工作opening['opn]开幕式，落成典礼guest[ɡest] 客人concert ['kɑnsrt] 音乐会headmaster[hed'mstr] 校长event['vent] 大事，公开活动calendar['klndr] 日历，日程表Franklin ['frklin] 富兰克林湖noon n.中午sandy ['sndi:， 'sndi] adj.含沙的goodbye ['ɡd'ba] int.再见look through 浏览bookstore ['bk'st:] n.书店cross [krs] v.穿过；横过；越过elevator ['eliveit] n.电梯low [lu] adj.低的slow [slu] adj.慢的；缓慢的fan [fn] n.迷；狂热迷note [nut] n.短信；笔记come along ['l] 出现；发生get along 相处baby n.婴儿；小孩at least [li:st] 至少traffic ['trfik] n.交通least [li:st] adj.little的最高级REVIEW OF UNITS 6-10review [ri'vju:] n.复习；回顾erhu 二胡(乐器名)Subtitle ['sb'tatl] n.(电影或电视上的)字幕web page 网页amusement [''mju:zmnt] n.娱乐；消遣neither ['ni:] pron.(二者)都不玩的愉快disneyland ['dznlnd] 迪斯尼乐园Mickey Mouse ['miki] 米老鼠Donald Duck ['dnld] 唐老鸭character ['krikt] n.人物；角色seen v.see的过去分词theme [θi:m] n.主题attraction ['trkn] n.有吸引力的事物(人)roller coaster [rul,'kst] 过山车cruise [kru:z] n.巡游；巡航board [b:d] n.甲板on board 在船上route [ru:t] n.路线end up 结束island ['ailnd] n.岛；岛屿especially [is'peli] adv.特别；尤其exchange student [iks'teind] n.交换生attendant ['tendnt] n.服务员flight attendant (飞机上的)空中服务员discover [dis'kv] v.发现requirement [ri'kwaimnt] n.要求，必要条件guide [ɡaid] n.导游tour guide [tu] 导游three quarters [kw:ts] n.四分之三foreign ['frin] adj.外国的；外来的film n.电影s outheast ['sauθ'i:st] n.东南 adj.东南的wonderful ['wndful，'wndrfl] adj.极好的` holiday ['hldi] n.假日；假期节日quarter ['kw:t] n.四分之一；一刻钟population ['ppju'lein] n.人口fear [fi] v.害怕；担心brave [breiv] adj.勇敢的；无畏的excellent ['ekslnt] adj.卓越的；极好的Indian ['ndjn] adj.印度的；印度人的Night Safari [s'fɑ:ri:] 夜间野生动物园dark [dɑ:k] n.黄昏；黑暗fox [fks] n.狐狸wake [weik] v.醒来；唤醒wake up 睡醒；醒来daytime ['de'tam] n.白天；日间natural ['ntrl，'ntrl] 自然的；自然界的environment [in'vairnmnt] n.环境temperature ['temprit] n.温度all year round 一年到头，终年equator [I'kweit] n.赤道whenever [hwen'ev] conj.无论如何spring [spri] n.春天autumn [':tm] n.秋天season ['si:zn，'sizn] n.季节type ] [taip] n.类型awake ['weik] adj.醒着的comment ['kment] n.评论；意见album ['lbm] n.集子；唱片集；相片簿personal ['p:snl] adj.私人的；个人的special ['spel] adj.特别的；特殊的；专门的receive [ri'si:v] v.收到；接受gave [ɡeiv] v.give的过去式guy [ɡai] n.家伙；人spider ['spaid] n.蜘蛛mouse [maus] n.(pl.mice)老鼠hamster ['hmst] n.仓鼠snake [sneik] n.蛇turtle ['t:tl] n.海龟child [taild] n.孩子；儿女pot-bellied [pt],'belid] 大腹便便的；大肚子的pig n.猪advantage [d'vɑ:ntid] n.有利条件；优点disadvantage ['disd'vɑ:ntid] n.不利条件；缺点popular ['ppjul] adj.流行的perfect ['p:fikt] adj.完美的，理想的rabbit ['rbit] n.兔；野兔clean [kli:n] adj.清洁的；干净的company ['kmpni] n.伙伴cost [kst] v.价值(若干)；花(多少钱)asleep ['sli:p] adj.睡着的fall asleep 入睡choose [tu:z] v.选择present ['preznt] n.礼物open v.打开gave [ɡeiv] v.give的过去式give away 赠送；分发bench [bent] n.长凳；长椅rather than ['rɑ:] 而不是Sweden ['swi:dn] 瑞典instead [in'sted] adv.代替；而不是the Olympics ['lmpks] 奥林匹克运动会enter ['ent，'ent(r)] v.参加；进入nearly ['nili] adv.几乎sang [s] v.sing的过去式clearly ['kll] adv.清楚地；明显地stage [steid] n.舞台native ['neitiv] adj.本地的；本国的native speaker 以某种语言为母语的人；说本族语的人winner ['wn] n.胜利者modest ['mdist] adj.谦虚的，谦让的interested ['ntrstd] adj.感兴趣的encourage [in'krid] v.鼓励spokesperson ['spuksp:sn] n.发言人；代言人progress ['pruɡres] n.进步；前进take an interested in 对……感兴趣hear of 听说make progress ['pruɡres] 取得进步；取得进展besides 而且；除……之外make friends with 与……交友statement ['steitmnt] n.声明；陈述mention ['menn] v.提及；说起drive [draiv] v.开车；驾驶not at all 一点也不turn down 把……调低；关小yard [jɑ:d] n.院子right away 立刻；马上task [tɑ:sk] n.任务；工作；作业poster ['pust] n.海报waitress ['wetrs] n.女服务生brought [br:t] v.bring的过去式solution [s'lu:n] n.解答、解决办法line n.排；队；列wait in line 排队等候annoy ['ni] v.使恼怒，使生气annoyed ['nd] adj.恼怒的，生气的polite [p'lait] adj.有礼貌的；客气的perhaps [p'hps] adv.或许；大概door n.门cut in line 插队hasn't = has notterm [t:m] n.术语etiquette ['et'ket] n.礼节normal ['n:ml] adj.正常的；正规的behavior [b'hevj] n.行为；举止；表现at first 首先Asian ['en, 'en] adj.亚洲的；亚洲人的uncomfortable [n'kmftbl] adj.不舒服的impolite ['mp'lat] adj.无理的；粗鲁的allow ['lau] v.允许；准许keep …down 控制；抑制voice [vis] n.声音public ['pblik] n.公众take care 当心；小心cough [kf] v.咳嗽sneeze [sni:z] 打喷嚏break [breik] v.打破，违背reak the rule 违反规则politely [p'latl] adv.客气地；斯文地smoke [smuk] v.抽烟；吸烟put out 扑灭、熄灭(火)、关灯cigarette ['siɡ'ret] n.香烟criticize ['kritisaiz] v.批判careful ['kful] adj.当心；小心drop [drp] v.落下；掉下litter ['lit] n.垃圾pick [pik] v.采；摘；挑选pick …up 捡起behave [bi'heiv] v.举止；表现collect [k'lekt] v.收集；搜集shell [el] n.贝壳；壳marathon ['mr'θn] 体育比赛中)马拉松赛跑pair n.一对；一双skate [skeit] n.溜冰鞋since [sins] 自从；从……以来Hilltop School ['hl'tp] 一学校名称、可译为山顶学校raise [reiz] v.筹集several ['sevrl] 几个的；数个的skater ['sket] n.溜冰者stamp [stmp] n.邮票kite n.风筝monster ['mnst] n.怪物，妖怪globe [ɡlub] n.球状体；球体anyone 任何人run out of 用完；用尽store [st:] v.储存cake n.蛋糕；糕、饼类食品particularly [p'tikjulli] 特别；尤其；异乎寻常的collector [k'lekt] n.收藏家by the way 顺便；附带说说common [kmn] adj.共同的；公共的extra ['ekstr] adj.额外的coin [kin] n.钱币；硬币topic ['tpik] n.话题；主题been v.be的过去分词be interested in 对……感兴趣writer ['rait] n.作家，作者dynasty ['dainsti] n.朝代；王朝character ['krikt] n.(著名的)人物；名人capital ['kpitl] n.省会，首都European ['jr'pi:n] 欧洲的；欧洲人(的)Russian ['rn] adj.俄罗斯的；俄罗斯人(的) Australian [:'streljn] adj.澳大利亚的；澳大利亚人的 n.澳大利亚人Jewish ['du:] adj.犹太人的；犹太族的Jew [du:] n.犹太人thousand ['θaznd] n.一千emperor ['empr] n.皇帝foreigner ['frin] n.外国人quite [kwait] adv.相当；十分certain ['s:tn] adj.确实的；无疑的the Olympic Games ['lmpk] 奥林匹克运动会far away 在远处miss v.思念；想念【初一下册英语单词：Unit7】。

FREDFET单die功率管数据表说明书

Absolute Maximum RatingsThermal and Mechanical CharacteristicsSingle die FREDFETUnitA V mJA UnitW °C/W°Coz g in·lbf N·mRatings 3724115±3078018Min Typ Max5200.240.11-551503000.22 6.2101.1ParameterContinuous Drain Current @ T C = 25°C Continuous Drain Current @ T C = 100°C Pulsed Drain Current 1Gate-Source VoltageSingle Pulse Avalanche Energy 2Avalanche Current, Repetitive or Non-RepetitiveCharacteristicTotal Power Dissipation @ T C = 25°C Junction to Case Thermal ResistanceCase to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case)Package WeightMounting Torque (TO-247 Package), 6-32 or M3 screwSymbol I D I DM V GS E AS I ARSymbol P D R θJC R θCS T J ,T STGT L W TTorque TYPICAL APPLICATIONS•ZVS phase shifted and other full bridge •Half bridge•PFC and other boost converter •Buck converter•Single and two switch forward •FlybackFEATURES•Fast switching with low EMI •Low t rr for high reliability•Ultra low C rss for improved noise immunity •Low gate charge •Avalanche energy rated •RoHS compliantAPT37F50B APT37F50SPower MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C rss /C iss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.N-Channel FREDFETMicrosemi Website - 050-8125 R e v D 8-2011Resistive Switching V DD = 333V , I D = 18A R G = 4.7Ω 6 , V GG = 15VStatic CharacteristicsT J = 25°C unless otherwise speci ﬁ edSource-Drain Diode CharacteristicsDynamic CharacteristicsT J = 25°C unless otherwise speci ﬁ edAPT37F50B_S1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2Starting at T J = 25°C, L = 4.81mH, R G = 25Ω, I AS = 18A.3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.4 C o(cr) is def ned as a f xed capacitance with the same stored charge as C OSS with V DS = 67% of V (BR)DSS .5 C o(er) is def ned as a f xed capacitance with the same stored energy as C OSS with V DS = 67% of V (BR)DSS . To calculate C o(er) for any value of V DS less than V (BR)DSS, use this equation: C o(er) = -1.33E-7/V DS ^2 + 3.06E-8/V DS + 8.83E-11.6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)Microsemi reserves the right to change, without notice, the speci ﬁ cations and information contained herein.Unit V V/°C ΩV mV/°C μA nAUnit SpFnCnsUnitAV ns μC A V/nsMin Typ Max 5000.600.13 0.152.54 5-102501000±100Min Typ Max275710 75 615 355180 14532 65 25 29 65 21Min Typ Max371151.22504500.88 2.18 8.4 11.820Test ConditionsV GS = 0V , I D = 250μA Reference to 25°C, I D = 250μAV GS = 10V , I D = 18AV GS = V DS , I D = 1mA V DS = 500V T J = 25°C V GS = 0VT J = 125°CV GS = ±30VTest ConditionsV DS = 50V , I D = 18AV GS = 0V , V DS = 25Vf = 1MHzV GS = 0V , V DS = 0V to 333VV GS = 0 to 10V , I D = 18A,V DS = 250V Test ConditionsMOSFET symbol showing theintegral reverse p-n junction diode (body diode)I SD = 18A , T J = 25°C, V GS = 0VT J = 25°C T J = 125°CI SD = 18A 3T J = 25°C di SD /dt = 100A/μs T J = 125°C V DD = 100VT J = 25°C T J = 125°CI SD ≤ 18A, di/dt ≤1000A/μs, V DD = 333V,T J = 125°CParameterDrain-Source Breakdown VoltageBreakdown Voltage Temperature Coeff cient Drain-Source On Resistance 3Gate-Source Threshold VoltageThreshold Voltage Temperature Coeff cient Zero Gate Voltage Drain Current Gate-Source Leakage CurrentParameterForward Transconductance Input CapacitanceReverse Transfer Capacitance Output CapacitanceEffective Output Capacitance, Charge RelatedEffective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall TimeParameterContinuous Source Current (Body Diode)Pulsed Source Current (Body Diode) 1Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dtSymbolV BR(DSS)∆V BR(DSS)/∆T JR DS(on)V GS(th)∆V GS(th)/∆T JI DSS I GSSSymbolg fs C iss C rss C oss C o(cr) 4C o(er) 5Q g Q gs Q gd t d(on)t r t d(off)t fSymbolI S I SM V SD t rr Q rr I rrm dv/dt050-8125 R e v D 8-2011V G S , G A T E -T O -S O U R C E V O L T A G E (V )g f s , T R A N S C O N D U C T A N C ER D S (O N ), D R A I N -T O -S O U R C E O N R E S I S T A N C EI D , D R A I N C U R R E N T (A )I S D , R E V E R S E D R A I N C U R R E N T (A )C , C A P A C I T A N C E (p F )I D , D R A I N C U R R E N T (A )I D , D R I A N C U R R E N T (A )V DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)V DS , DRAIN-TO-SOURCE VOLTAGE (V)Figure 1, Output CharacteristicsFigure 2, Output CharacteristicsT J , JUNCTION TEMPERATURE (°C) V GS , GATE-TO-SOURCE VOLTAGE (V)Figure 3, R DS(ON) vs Junction Temperature Figure 4, Transfer CharacteristicsI D , DRAIN CURRENT (A)V DS , DRAIN-TO-SOURCE VOLTAGE (V)Figure 5, Gain vs Drain CurrentFigure 6, Capacitance vs Drain-to-Source Voltage Q g , TOTAL GATE CHARGE (nC)V SD , SOURCE-TO-DRAIN VOLTAGE (V)Figure 7, Gate Charge vs Gate-to-Source VoltageFigure 8, Reverse Drain Current vs Source-to-Drain VoltageAPT37F50B_S050-8125 R e v D 8-2011D3PAK Package OutlineTO-247 (B) Package Outline1.22 (.048)1.32 (.052){3 Plcs}and Leadsare Platedne1 SAC: Tin, Silver, Copper e3 100% Sn PlatedDimensions in Millimeters (Inches)Dimensions in Millimeters (Inches) ID,DRAINCURRENT(A)VDS, DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V)Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area ZθJC,THERMALIMPEDANCE(°C/W)RECTANGULAR PULSE DURATION (seconds)Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse DurationID,DRAINCURRENT(A)2001001010.10.250.200.150.100.052001001010.1APT37F50B_S 05-8125RevD8-211。

制衣专用名词

制衣术语第一部分服装部件一、上装部位：1、前身肩缝：s h o u l d e r s e a m前后肩连接的部位领嘴：n o t c h领底口末端至门里襟止口的部位门襟：c l o s i n g锁眼的衣片门襟止口：f r o n t e d g e门襟的边沿搭门：f r o n t o v e r l a p门里襟叠在一起的部位扣眼：b u t t o n h o l e扣钮的眼孔眼距：b u t t o n h o l e s p a c i n g扣眼间的距离袖窿：a r m h o l e绱袖的部位驳头：l a p e l门里襟上部翻折部位平驳头：n o t c h与上领片的夹角呈三角形缺口的方角驳头戗驳头：p e a k l a p e l驳角向上形成尖角的驳头胸部：c h e s t衣服前胸丰满处腰节：w a i s t l i n e衣服腰部最细处摆缝：s i d e s e a m袖窿下面由前后身连接的缝里襟：u n d e r l a p钉钮的衣片底边：h e m衣服下部的边沿部位串口：g o r g e领面与驳头面缝合处假眼：m o c k b u t t o n h o l e不开眼口的装饰用扣眼驳口：r o l l l i n e驳头翻折部位单排扣：s i n g l e b r e a s t e d里襟钉一排钮扣双排扣：d o u b l e b r e a s t e d门里襟各钉一排钮扣止口圆角：f r o n t c u t门里襟下部的圆头前后披肩：f r o n t o r b a c k s h o u l d e r c a p e覆盖在肩部前后的部件扣位：b u t t o n p l a c e m e n t钮扣的位置滚眼：b o u n d b u t t o n h o l e用面料做的扣眼前过肩：f r o n t y o k e连接前身与肩缝合的部件门襟翻边：p l a c k e t外翻的门襟边领省：n e c k l i n e d a r t领窝部位的省道前腰省：f r o n t w a i s t d a r t衣服前身腰部的省道肋省：u n d e r a r m d a r t衣服两侧腋下处的省道横省：s i d e d a r t腋下摆缝处至胸部的省道前肩省：f r o n t s h o u l d e r d a r t前身肩部的省道肚省：f i s h d a r t大袋口部位的横省前身通省：f r o n t o p e n d a r t从肩缝到下摆的开刀缝刀背缝：p r i n c e s s s e a m弯形的开刀缝总肩：a c r o s s b a c k s h o u l d e r从左肩端至右肩端的部位后过肩：b a c k y o k e连接后身与肩缝合的部件背缝：c e n t e r b a c k s e a m后肩中间缝合的缝子背叉：v e n t背缝下部开叉摆叉：s i d e v e n t摆缝下部开叉后搭门：b a c k o v e r l a p门里襟开在后背处领窝：n e c k l i n e前后肩与领子缝合的部位后领省：b a c k n e c k d a r t后领窝处呈八字形的省道后肩省：b a c k s h o u l d e r d a r t后身肩部的省道后腰省：b a c k w a i s t d a r t后身腰部的省道后身通省：b a c k o p e n d a r t从肩缝到下摆的开刀缝二、上装部件1、领倒挂领：t u r n e d-d o w n c o l l a r领角向下的领型中山服领：Z h o n g s h a n c o l l a r由底领、翻领组成，领角成八字形的领型尖领：p o i n t e d c o l l a r领角呈尖形的领型衬衫领：s h i r t c o l l a r由上领、下领组成，衬衣专有的领型。

近藤效应

Tunable Kondo eﬀect in a single donor atomnsbergen 1,G.C.Tettamanzi 1,J.Verduijn 1,N.Collaert 2,S.Biesemans 2,M.Blaauboer 1,and S.Rogge 11Kavli Institute of Nanoscience,Delft University of Technology,Lorentzweg 1,2628CJ Delft,The Netherlands and2InterUniversity Microelectronics Center (IMEC),Kapeldreef 75,3001Leuven,Belgium(Dated:September 30,2009)The Kondo eﬀect has been observed in a single gate-tunable atom.The measurement device consists of a single As dopant incorporated in a Silicon nanostructure.The atomic orbitals of the dopant are tunable by the gate electric ﬁeld.When they are tuned such that the ground state of the atomic system becomes a (nearly)degenerate superposition of two of the Silicon valleys,an exotic and hitherto unobserved valley Kondo eﬀect appears.Together with the “regular”spin Kondo,the tunable valley Kondo eﬀect allows for reversible electrical control over the symmetry of the Kondo ground state from an SU(2)-to an SU(4)-conﬁguration.The addition of magnetic impurities to a metal leads to an anomalous increase of their resistance at low tem-perature.Although discovered in the 1930’s,it took until the 1960’s before this observation was satisfactorily ex-plained in the context of exchange interaction between the localized spin of the magnetic impurity and the de-localized conduction electrons in the metal [1].This so-called Kondo eﬀect is now one of the most widely stud-ied phenomena in condensed-matter physics [2]and plays a mayor role in the ﬁeld of nanotechnology.Kondo ef-fects on single atoms have ﬁrst been observed by STM-spectroscopy and were later discovered in a variety of mesoscopic devices ranging from quantum dots and car-bon nanotubes to single molecules [3].Kondo eﬀects,however,do not only arise from local-ized spins:in principle,the role of the electron spin can be replaced by another degree of freedom,for example or-bital momentum [4].The simultaneous presence of both a spin-and an orbital degeneracy gives rise to an exotic SU(4)-Kondo eﬀect,where ”SU(4)”refers to the sym-metry of the corresponding Kondo ground state [5,6].SU(4)Kondo eﬀects have received quite a lot of theoret-ical attention [6,7],but so far little experimental work exists [8].The atomic orbitals of a gated donor in Si consist of linear combinations of the sixfold degenerate valleys of the Si conduction band.The orbital-(or more speciﬁ-cally valley)-degeneracy of the atomic ground state is tunable by the gate electric ﬁeld.The valley splitting ranges from ∼1meV at high ﬁelds (where the electron is pulled towards the gate interface)to being equal to the donors valley-orbit splitting (∼10-20meV)at low ﬁelds [9,10].This tunability essentially originates from a gate-induced quantum conﬁnement transition [10],namely from Coulombic conﬁnement at the donor site to 2D-conﬁnement at the gate interface.In this article we study Kondo eﬀects on a novel exper-imental system,a single donor atom in a Silicon nano-MOSFET.The charge state of this single dopant can be tuned by the gate electrode such that a single electron (spin)is localized on the pared to quantum dots (or artiﬁcial atoms)in Silicon [11,12,13],gated dopants have a large charging energy compared to the level spac-ing due to their typically much smaller size.As a result,the orbital degree of freedom of the atom starts to play an important role in the Kondo interaction.As we will argue in this article,at high gate ﬁeld,where a (near)de-generacy is created,the valley index forms a good quan-tum number and Valley Kondo [14]eﬀects,which have not been observed before,appear.Moreover,the Valley Kondo resonance in a gated donor can be switched on and oﬀby the gate electrode,which provides for an electri-cally controllable quantum phase transition [15]between the regular SU(2)spin-and the SU(4)-Kondo ground states.In our experiment we use wrap-around gate (FinFET)devices,see Fig.1(a),with a single Arsenic donor in the channel dominating the sub-threshold transport charac-teristics [16].Several recent experiments have shown that the ﬁngerprint of a single dopant can be identiﬁed in low-temperature transport through small CMOS devices [16,17,18].We perform transport spectroscopy (at 4K)on a large ensemble of FinFET devices and select the few that show this ﬁngerprint,which essentially consists of a pair of characteristic transport resonances associ-ated with the one-electron (D 0)-and two-electron (D −)-charge states of the single donor [16].From previous research we know that the valley splitting in our Fin-FET devices is typically on the order of a few meV’s.In this Report,we present several such devices that are in addition characterized by strong tunnel coupling to the source/drain contacts which allows for suﬃcient ex-change processes between the metallic contacts and the atom to observe Kondo eﬀects.Fig.1b shows a zero bias diﬀerential conductance (dI SD /dV SD )trace at 4.2K as a function of gate volt-age (V G )of one of the strongly coupled FinFETs (J17).At the V G such that a donor level in the barrier is aligned with the Fermi energy in the source-drain con-tacts (E F ),electrons can tunnel via the level from source to drain (and vice versa)and we observe an increase in the dI SD /dV SD .The conductance peaks indicated bya r X i v :0909.5602v 1 [c o n d -m a t .m e s -h a l l ] 30 S e p 2009FIG.1:Coulomb blocked transport through a single donor in FinFET devices(a)Colored Scanning Electron Micrograph of a typical FinFET device.(b)Diﬀerential conductance (dI SD/dV SD)versus gate voltage at V SD=0.(D0)and(D−) indicate respectively the transport resonances of the one-and two-electron state of a single As donor located in the Fin-FET channel.Inset:Band diagram of the FinFET along the x-axis,with the(D0)charge state on resonance.(c)and(d) Colormap of the diﬀerential conductance(dI SD/dV SD)as a function of V SD and V G of samples J17and H64.The red dots indicate the(D0)resonances and data were taken at1.6 K.All the features inside the Coulomb diamonds are due to second-order chargeﬂuctuations(see text).(D0)and(D−)are the transport resonances via the one-electron and two-electron charge states respectively.At high gate voltages(V G>450mV),the conduction band in the channel is pushed below E F and the FET channel starts to open.The D−resonance has a peculiar double peak shape which we attribute to capacitive coupling of the D−state to surrounding As atoms[19].The current between the D0and the D−charge state is suppressed by Coulomb blockade.The dI SD/dV SD around the(D0)and(D−)resonances of sample J17and sample H64are depicted in Fig.1c and Fig.1d respectively.The red dots indicate the po-sitions of the(D0)resonance and the solid black lines crossing the red dots mark the outline of its conducting region.Sample J17shows aﬁrst excited state at inside the conducting region(+/-2mV),indicated by a solid black line,associated with the valley splitting(∆=2 mV)of the ground state[10].The black dashed lines indicate V SD=0.Inside the Coulomb diamond there is one electron localized on the single As donor and all the observable transport in this regionﬁnds its origin in second-order exchange processes,i.e.transport via a vir-tual state of the As atom.Sample J17exhibits three clear resonances(indicated by the dashed and dashed-dotted black lines)starting from the(D0)conducting region and running through the Coulomb diamond at-2,0and2mV. The-2mV and2mV resonances are due to a second or-der transition where an electron from the source enters one valley state,an the donor-bound electron leaves from another valley state(see Fig.2(b)).The zero bias reso-nance,however,is typically associated with spin Kondo eﬀects,which happen within the same valley state.In sample H64,the pattern of the resonances looks much more complicated.We observe a resonance around0mV and(interrupted)resonances that shift in V SD as a func-tion of V G,indicating a gradual change of the internal level spectrum as a function of V G.We see a large in-crease in conductance where one of the resonances crosses V SD=0(at V G∼445mV,indicated by the red dashed elipsoid).Here the ground state has a full valley degen-eracy,as we will show in theﬁnal paragraph.There is a similar feature in sample J17at V G∼414mV in Fig.1c (see also the red cross in Fig.1b),although that is prob-ably related to a nearby defect.Because of the relative simplicity of its diﬀerential conductance pattern,we will mainly use data obtained from sample J17.In order to investigate the behavior at the degeneracy point of two valley states we use sample H64.In the following paragraphs we investigate the second-order transport in more detail,in particular its temper-ature dependence,ﬁne-structure,magneticﬁeld depen-dence and dependence on∆.We start by analyzing the temperature(T)dependence of sample J17.Fig.2a shows dI SD/dV SD as a function of V SD inside the Coulomb diamond(at V G=395mV) for a range of temperatures.As can be readily observed from Fig.2a,both the zero bias resonance and the two resonances at V SD=+/-∆mV are suppressed with increasing T.The inset of Fig.2a shows the maxima (dI/dV)MAX of the-2mV and0mV resonances as a function of T.We observe a logarithmic dependence on T(a hallmark sign of Kondo correlations)at both resonances,as indicated by the red line.To investigate this point further we analyze another sample(H67)which has sharper resonances and of which more temperature-dependent data were obtained,see Fig.2c.This sample also exhibits the three resonances,now at∼-1,0and +1mV,and the same strong suppression by tempera-ture.A linear background was removed for clarity.We extracted the(dI/dV)MAX of all three resonances forFIG.2:Electrical transport through a single donor atom in the Coulomb blocked region(a)Diﬀerential conductance of sample J17as a function of V SD in the Kondo regime(at V G=395mV).For clarity,the temperature traces have been oﬀset by50nS with respect to each other.Both the resonances with-and without valley-stateﬂip scale similarly with increasing temperature. Inset:Conductance maxima of the resonances at V SD=-2mV and0mV as a function of temperature.(b)Schematic depiction of three(out of several)second-order processes underlying the zero bias and±∆resonances.(c)Diﬀerential conductance of sample H67as a function of V SD in the Kondo regime between0.3K and6K.A linear(and temperature independent) background on the order of1µS was removed and the traces have been oﬀset by90nS with respect to each other for clarity.(d)The conductance maxima of the three resonances of(c)normalized to their0.3K value.The red line is aﬁt of the data by Eq.1.all temperatures and normalized them to their respective(dI/dV)MAX at300mK.The result is plotted in Fig.2d.We again observe that all three peaks have the same(log-arithmic)dependence on temperature.This dependenceis described well by the following phenomenological rela-tionship[20](dI SD/dV SD)max (T)=(dI SD/dV SD)T 2KT2+TKs+g0(1)where TK =T K/√21/s−1,(dI SD/dV SD)is the zero-temperature conductance,s is a constant equal to0.22 [21]and g0is a constant.Here T K is the Kondo tem-perature.The red curve in Fig.2d is aﬁt of Eq.(1)to the data.We readily observe that the dataﬁt well and extract a T K of2.7K.The temperature scaling demon-strates that both the no valley-stateﬂip resonance at zero bias voltage and the valley-stateﬂip-resonance atﬁnite bias are due to Kondo-type processes.Although a few examples ofﬁnite-bias Kondo have been reported[15,22,23],the corresponding resonances (such as our±∆resonances)are typically associated with in-elastic cotunneling.Aﬁnite bias between the leads breaks the coherence due to dissipative transitions in which electrons are transmitted from the high-potential-lead to the low-potential lead[24].These dissipative4transitions limit the lifetime of the Kondo-type processes and,if strong enough,would only allow for in-elastic events.In the supporting online text we estimate the Kondo lifetime in our system and show it is large enough to sustain theﬁnite-bias Kondo eﬀects.The Kondo nature of the+/-∆mV resonances points strongly towards a Valley Kondo eﬀect[14],where co-herent(second-order)exchange between the delocalized electrons in the contacts and the localized electron on the dopant forms a many-body singlet state that screens the valley index.Together with the more familiar spin Kondo eﬀect,where a many-body state screens the spin index, this leads to an SU(4)-Kondo eﬀect,where the spin and charge degree of freedom are fully entangled[8].The ob-served scaling of the+/-∆-and zero bias-resonances in our samples by a single T K is an indication that such a fourfold degenerate SU(4)-Kondo ground state has been formed.To investigate the Kondo nature of the transport fur-ther,we analyze the substructure of the resonances of sample J17,see Fig.2a.The central resonance and the V SD=-2mV each consist of three separate peaks.A sim-ilar substructure can be observed in sample H67,albeit less clear(see Fig.2c).The substructure can be explained in the context of SU(4)-Kondo in combination with a small diﬀerence between the coupling of the ground state (ΓGS)-and theﬁrst excited state(ΓE1)-to the leads.It has been theoretically predicted that even a small asym-metry(ϕ≡ΓE1/ΓGS∼=1)splits the Valley Kondo den-sity of states into an SU(2)-and an SU(4)-part[25].Thiswill cause both the valley-stateﬂip-and the no valley-stateﬂip resonances to split in three,where the middle peak is the SU(2)-part and the side-peaks are the SU(4)-parts.A more detailed description of the substructure can be found in the supporting online text.The split-ting between middle and side-peaks should be roughly on the order of T K[25].The measured splitting between the SU(2)-and SU(4)-parts equals about0.5meV for sample J17and0.25meV for sample H67,which thus corresponds to T K∼=6K and T K∼=3K respectively,for the latter in line with the Kondo temperature obtained from the temperature dependence.We further note that dI SD/dV SD is smaller than what we would expect for the Kondo conductance at T<T K.However,the only other study of the Kondo eﬀect in Silicon where T K could be determined showed a similar magnitude of the Kondo signal[12].The presence of this substructure in both the valley-stateﬂip-,and the no valley-stateﬂip-Kondo resonance thus also points at a Valley Kondo eﬀect.As a third step,we turn our attention to the magnetic ﬁeld(B)dependence of the resonances.Fig.3shows a colormap plot of dI SD/dV SD for samples J17and H64 both as a function of V SD and B at300mK.The traces were again taken within the Coulomb diamond.Atﬁnite magneticﬁeld,the central Kondo resonances of both de-vices split in two with a splitting of2.2-2.4mV at B=FIG.3:Colormap plot of the conductance as a function of V SD and B of sample J17at V G=395mV(a)and H64at V G=464mV(b).The central Kondo resonances split in two lines which are separated by2g∗µB B.The resonances with a valley-stateﬂip do not seem to split in magneticﬁeld,a feature we associate with the diﬀerent decay-time of parallel and anti-parallel spin-conﬁgurations of the doubly-occupied virtual state(see text).10T.From theoretical considerations we expect the cen-tral Valley Kondo resonance to split in two by∆B= 2g∗µB B if there is no mixing of valley index(this typical 2g∗µB B-splitting of the resonances is one of the hall-marks of the Kondo eﬀect[24]),and to split in three (each separated by g∗µB B)if there is a certain degree of valley index mixing[14].Here,g∗is the g-factor(1.998 for As in Si)andµB is the Bohr magneton.In the case of full mixing of valley index,the valley Kondo eﬀect is expected to vanish and only spin Kondo will remain [25].By comparing our measured magneticﬁeld splitting (∆B)with2g∗µB B,weﬁnd a g-factor between2.1and 2.4for all three devices.This is comparable to the result of Klein et al.who found a g-factor for electrons in SiGe quantum dots in the Kondo regime of around2.2-2.3[13]. The magneticﬁeld dependence of the central resonance5indicates that there is no signiﬁcant mixing of valley in-dex.This is an important observation as the occurrence of Valley Kondo in Si depends on the absence of mix-ing(and thus the valley index being a good quantum number in the process).The conservation of valley in-dex can be attributed to the symmetry of our system. The large2D-conﬁnement provided by the electricﬁeld gives strong reason to believe that the ground-andﬁrst excited-states,E GS and E1,consist of(linear combi-nations of)the k=(0,0,±kz)valleys(with z in the electricﬁeld direction)[10,26].As momentum perpen-dicular to the tunneling direction(k x,see Fig.1)is con-served,also valley index is conserved in tunneling[27]. The k=(0,0,±k z)-nature of E GS and E1should be as-sociated with the absence of signiﬁcant exchange interac-tion between the two states which puts them in the non-interacting limit,and thus not in the correlated Heitler-London limit where singlets and triplets are formed.We further observe that the Valley Kondo resonances with a valley-stateﬂip do not split in magneticﬁeld,see Fig.3.This behavior is seen in both samples,as indicated by the black straight solid lines,and is most easily ob-served in sample J17.These valley-stateﬂip resonances are associated with diﬀerent processes based on their evo-lution with magneticﬁeld.The processes which involve both a valleyﬂip and a spinﬂip are expected to shift to energies±∆±g∗µB B,while those without a spin-ﬂip stay at energies±∆[14,25].We only seem to observe the resonances at±∆,i.e.the valley-stateﬂip resonances without spinﬂip.In Ref[8],the processes with both an orbital and a spinﬂip also could not be observed.The authors attribute this to the broadening of the orbital-ﬂip resonances.Here,we attribute the absence of the processes with spinﬂip to the diﬀerence in life-time be-tween the virtual valley state where two spins in seperate valleys are parallel(τ↑↑)and the virtual state where two spins in seperate valleys are anti-parallel(τ↑↓).In con-trast to the latter,in the parallel spin conﬁguration the electron occupying the valley state with energy E1,can-not decay to the other valley state at E GS due to Pauli spin blockade.It wouldﬁrst needs toﬂip its spin[28].We have estimatedτ↑↑andτ↑↓in our system(see supporting online text)andﬁnd thatτ↑↑>>h/k b T K>τ↑↓,where h/k b T K is the characteristic time-scale of the Kondo pro-cesses.Thus,the antiparallel spin conﬁguration will have relaxed before it has a change to build up a Kondo res-onance.Based on these lifetimes,we do not expect to observe the Kondo resonances associated with both an valley-state-and a spin-ﬂip.Finally,we investigate the degeneracy point of valley states in the Coulomb diamond of sample H64.This degeneracy point is indicated in Fig.1d by the red dashed ellipsoid.By means of the gate electrode,we can tune our system onto-or oﬀthis degeneracy point.The gate-tunability in this sample is created by a reconﬁguration of the level spectrum between the D0and D−-charge states,FIG.4:Colormap plot of I SD at V SD=0as a function of V G and B.For increasing B,a conductance peak develops around V G∼450mV at the valley degeneracy point(∆= 0),indicated by the dashed black line.Inset:Magneticﬁeld dependence of the valley degeneracy point.The resonance is ﬁxed at zero bias and its magnitude does not depend on the magneticﬁeld.probably due to Coulomb interactions in the D−-states. Figure4shows a colormap plot of I SD at V SD=0as a function of V G and B(at0.3K).Note that we are thus looking at the current associated with the central Kondo resonance.At B=0,we observe an increasing I SD for higher V G as the atom’s D−-level is pushed toward E F. As B is increased,the central Kondo resonance splits and moves away from V SD=0,see Fig.3.This leads to a general decrease in I SD.However,at around V G= 450mV a peak in I SD develops,indicated by the dashed black line.The applied B-ﬁeld splits oﬀthe resonances with spin-ﬂip,but it is the valley Kondo resonance here that stays at zero bias voltage giving rise to the local current peak.The inset of Fig.4shows the single Kondo resonance in dI SD/dV SD as a function of V SD and B.We observe that the magnitude of the resonance does not decrease signiﬁcantly with magneticﬁeld in contrast to the situation at∆=0(Fig.3b).This insensitivity of the Kondo eﬀect to magneticﬁeld which occurs only at∆= 0indicates the profound role of valley Kondo processes in our structure.It is noteworthy to mention that at this speciﬁc combination of V SD and V G the device can potentially work as a spin-ﬁlter[6].We acknowledge fruitful discussions with Yu.V. Nazarov,R.Joynt and S.Shiau.This project is sup-ported by the Dutch Foundation for Fundamental Re-search on Matter(FOM).6[1]Kondo,J.,Resistance Minimum in Dilute Magnetic Al-loys,Prog.Theor.Phys.3237-49(1964)[2]Hewson,A.C.,The Kondo Problem to Heavy Fermions(Cambridge Univ.Press,Cambridge,1993).[3]Wingreen N.S.,The Kondo eﬀect in novel systems,Mat.Science Eng.B842225(2001)and references therein.[4]Cox,D.L.,Zawadowski,A.,Exotic Kondo eﬀects in met-als:magnetic ions in a crystalline electricﬁeld and tun-neling centers,Adv.Phys.47,599-942(1998)[5]Inoshita,T.,Shimizu, A.,Kuramoto,Y.,Sakaki,H.,Correlated electron transport through a quantum dot: the multiple-level eﬀect.Phys.Rev.B48,14725-14728 (1993)[6]Borda,L.Zar´a nd,G.,Hofstetter,W.,Halperin,B.I.andvon Delft,J.,SU(4)Fermi Liquid State and Spin Filter-ing in a Double Quantum Dot System,Phys.Rev.Lett.90,026602(2003)[7]Zar´a nd,G.,Orbitalﬂuctuations and strong correlationsin quantum dots,Philosophical Magazine,86,2043-2072 (2006)[8]Jarillo-Herrero,P.,Kong,J.,van der Zant H.S.J.,Dekker,C.,Kouwenhoven,L.P.,De Franceschi,S.,Or-bital Kondo eﬀect in carbon nanotubes,Nature434,484 (2005)[9]Martins,A.S.,Capaz,R.B.and Koiller,B.,Electric-ﬁeldcontrol and adiabatic evolution of shallow donor impuri-ties in silicon,Phys.Rev.B69,085320(2004)[10]Lansbergen,G.P.et al.,Gate induced quantum conﬁne-ment transition of a single dopant atom in a Si FinFET, Nature Physics4,656(2008)[11]Rokhinson,L.P.,Guo,L.J.,Chou,S.Y.,Tsui, D.C.,Kondo-like zero-bias anomaly in electronic transport through an ultrasmall Si quantum dot,Phys.Rev.B60, R16319-R16321(1999)[12]Specht,M.,Sanquer,M.,Deleonibus,S.,Gullegan G.,Signature of Kondo eﬀect in silicon quantum dots,Eur.Phys.J.B26,503-508(2002)[13]Klein,L.J.,Savage, D.E.,Eriksson,M.A.,Coulombblockade and Kondo eﬀect in a few-electron silicon/silicon-germanium quantum dot,Appl.Phys.Lett.90,033103(2007)[14]Shiau,S.,Chutia,S.and Joynt,R.,Valley Kondo eﬀectin silicon quantum dots,Phys.Rev.B75,195345(2007) [15]Roch,N.,Florens,S.,Bouchiat,V.,Wernsdirfer,W.,Balestro, F.,Quantum phase transistion in a single molecule quantum dot,Nature453,633(2008)[16]Sellier,H.et al.,Transport Spectroscopy of a SingleDopant in a Gated Silicon Nanowire,Phys.Rev.Lett.97,206805(2006)[17]Calvet,L.E.,Wheeler,R.G.and Reed,M.A.,Observa-tion of the Linear Stark Eﬀect in a Single Acceptor in Si, Phys.Rev.Lett.98,096805(2007)[18]Hofheinz,M.et al.,Individual charge traps in siliconnanowires,Eur.Phys.J.B54,299307(2006)[19]Pierre,M.,Hofheinz,M.,Jehl,X.,Sanquer,M.,Molas,G.,Vinet,M.,Deleonibus S.,Oﬀset charges acting as ex-cited states in quantum dots spectroscopy,Eur.Phys.J.B70,475-481(2009)[20]Goldhaber-Gordon,D.,Gres,J.,Kastner,M.A.,Shtrik-man,H.,Mahalu, D.,Meirav,U.,From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor,Phys.Rev.Lett.81,5225(1998) [21]Although the value of s=0.22stems from SU(2)spinKondo processes,it is valid for SU(4)-Kondo systems as well[8,25].[22]Paaske,J.,Rosch,A.,W¨o lﬂe,P.,Mason,N.,Marcus,C.M.,Nyg˙ard,Non-equilibrium singlet-triplet Kondo ef-fect in carbon nanotubes,Nature Physics2,460(2006) [23]Osorio, E.A.et al.,Electronic Excitations of a SingleMolecule Contacted in a Three-Terminal Conﬁguration, Nanoletters7,3336-3342(2007)[24]Meir,Y.,Wingreen,N.S.,Lee,P.A.,Low-TemperatureTransport Through a Quantum Dot:The Anderson Model Out of Equilibrium,Phys.Rev.Lett.70,2601 (1993)[25]Lim,J.S.,Choi,M-S,Choi,M.Y.,L´o pez,R.,Aguado,R.,Kondo eﬀects in carbon nanotubes:From SU(4)to SU(2)symmetry,Phys.Rev.B74,205119(2006) [26]Hada,Y.,Eto,M.,Electronic states in silicon quan-tum dots:Multivalley artiﬁcial atoms,Phys.Rev.B68, 155322(2003)[27]Eto,M.,Hada,Y.,Kondo Eﬀect in Silicon QuantumDots with Valley Degeneracy,AIP Conf.Proc.850,1382-1383(2006)[28]A comparable process in the direct transport throughSi/SiGe double dots(Lifetime Enhanced Transport)has been recently proposed[29].[29]Shaji,N.et.al.,Spin blockade and lifetime-enhancedtransport in a few-electron Si/SiGe double quantum dot, Nature Physics4,540(2008)7Supporting InformationFinFET DevicesThe FinFETs used in this study consist of a silicon nanowire connected to large contacts etched in a60nm layer of p-type Silicon On Insulator.The wire is covered with a nitrided oxide(1.4nm equivalent SiO2thickness) and a narrow poly-crystalline silicon wire is deposited perpendicularly on top to form a gate on three faces.Ion implantation over the entire surface forms n-type degen-erate source,drain,and gate electrodes while the channel protected by the gate remains p-type,see Fig.1a of the main article.The conventional operation of this n-p-n ﬁeld eﬀect transistor is to apply a positive gate voltage to create an inversion in the channel and allow a current toﬂow.Unintentionally,there are As donors present be-low the Si/SiO2interface that show up in the transport characteristics[1].Relation between∆and T KThe information obtained on T K in the main article allows us to investigate the relation between the splitting (∆)of the ground(E GS)-andﬁrst excited(E1)-state and T K.It is expected that T K decreases as∆increases, since a high∆freezes out valley-stateﬂuctuations.The relationship between T K of an SU(4)system and∆was calculated by Eto[2]in a poor mans scaling approach ask B T K(∆) B K =k B T K(∆=0)ϕ(2)whereϕ=ΓE1/ΓGS,withΓE1andΓGS the lifetimes of E1and E GS respectively.Due to the small∆com-pared to the barrier height between the atom and the source/drain contact,we expectϕ∼1.Together with ∆=1meV and T K∼2.7K(for sample H67)and∆=2meV and T K∼6K(for sample J17),Eq.2yields k B T K(∆)/k B T K(∆=0)=0.4and k B T K(∆)/k B T K(∆= 0)=0.3respectively.We can thus conclude that the rela-tively high∆,which separates E GS and E1well in energy, will certainly quench valley-stateﬂuctuations to a certain degree but is not expected to reduce T K to a level that Valley eﬀects become obscured.Valley Kondo density of statesHere,we explain in some more detail the relation be-tween the density of states induced by the Kondo eﬀects and the resulting current.The Kondo density of states (DOS)has three main peaks,see Fig.1a.A central peak at E F=0due to processes without valley-stateﬂip and two peaks at E F=±∆due to processes with valley-state ﬂip,as explained in the main text.Even a small asym-metry(ϕclose to1)will split the Valley Kondo DOS into an SU(2)-and an SU(4)-part[3],indicated in Fig1b in black and red respectively.The SU(2)-part is positioned at E F=0or E F=±∆,while the SU(4)-part will be shifted to slightly higher positive energy(on the order of T K).A voltage bias applied between the source and FIG.1:(a)dI SD/dV SD as a function of V SD in the Kondo regime(at395mV G)of sample J17.The substructure in the Kondo resonances is the result of a small diﬀerence between ΓE1andΓGS.This splits the peaks into a(central)SU(2)-part (black arrows)and two SU(4)-peaks(red arrows).(b)Density of states in the channel as a result ofϕ(=ΓE1/ΓGS)<1and applied V SD.drain leads results in the Kondo peaks to split,leaving a copy of the original structure in the DOS now at the E F of each lead,which is schematically indicated in Fig.1b by a separate DOS associated with each contact.The current density depends directly on the density of states present within the bias window deﬁned by source/drain (indicated by the gray area in Fig1b)[4].The splitting between SU(2)-and SU(4)-processes will thus lead to a three-peak structure as a function of V SD.Figure.1a has a few more noteworthy features.The zero-bias resonance is not positioned exactly at V SD=0, as can also be observed in the transport data(Fig1c of the main article)where it is a few hundredµeV above the Fermi energy near the D0charge state and a few hundredµeV below the Fermi energy near the D−charge state.This feature is also known to arise in the Kondo strong coupling limit[5,6].We further observe that the resonances at V SD=+/-2mV diﬀer substantially in magnitude.This asymmetry between the two side-peaks can actually be expected from SU(4)Kondo sys-tems where∆is of the same order as(but of course al-ways smaller than)the energy spacing between E GS and。

数字逻辑电路课程设计bit模加法器VHDL实现含完整样本

电子科技大学UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA数字逻辑设计实验报告实验题目: 4bit模9加法器学生姓名:指引教师:一、实验内容设计一种4bit模9加法器。

输入为两个4bit二进制数, 输出为两数相加后模9成果。

其数学表达式为: y=(x1+x2)mod 9。

二、实验规定1.功能性规定:可以实现4bit无符号数模9加法运算, 即输入两个4比特数据时可以对的输出其相加并模9运算成果。

2.算法规定:模加法器有各种算法, 可采用任意算法进行设计。

3.设计性规定:采用全加器、半加器和基本门构造化描述。

可以编写Test Bench文献, 并运用Modelsim进行仿真。

在Modelsim仿真对的基本上, 可以生成bit文献并上板验证其对的性。

4.基本上板规定:在上板实验时, 输入两个4bit数采用拨码开关输入, 输出采用LED灯进行显示。

三、设计思路1.整体思路:为了实现4bit无符号数模9加法运算, 可以先将两个4bit加数a和b先分别模9, 相加之后再模9得到最后成果。

2.模9器:先找出读入5bit数与模9后4bit数之间关系, 画出卡诺图, 再依照卡诺图得出其相应逻辑表达式即可。

设读入5bit数为carry、a、b、c、d, 模9后得到4bit 数为w、x、y、z。

则化简后得到逻辑表达式分别为:w = carry’ab’c’d’,x= carry’bc + carry’a’b + carry’bd + carrya’b’c’d’,y = carry’a’c + carry’cd + carry’abc’d’+ carrya’b’c’d’,z= carry’a’d + carry’acd’ + carry’abd’ + carry a’b’c’d’。

3.全加器:全加器可以实现两个1bit数a、b和进位输入cin相加, 其真值表如下所示：这里全加器由半加器和或门构成, 其原理图如下:半加器:半加器是全加器基本构成单元, 可以实现两个1bit数a和b相加, 并将进位输出, 其真值表如下：半加器由一种异或门和一种与门构成, 其原理图如下所示:5.数码管显示:单个数码管一共有7个端（不含小数点）, 用来表达构成一种数字7个某些, 故只要找到这7个段和模9后4bit数间相应关系, 将其画出卡诺图并化简成逻辑表达式即可。

国际商务英语函电常用缩写

相同，同值
ESQ;ESQRE
ESQUIRE
先生阁下
ET,AL.
ET ALII = AND OTHERS
及其他
E.T.A.
ESTIMATED TIME OF ARRIVAL
估计到达的时间
ETC.
ET CETERA = AND SO FORTH
等等
E.T.D.
ESTIMATED TIME OF DEPARTURE
COMMISSION
佣金
CON.INV.
CONSULAR INVOICE
领事发票
CONSGT,CONS'T
CONSIGNMENT
委托销售，寄售
CONT,CONTR
CONTRACT
合同，契约
CONTG
CONTAINING,CONTINUING
包括，内容，继续
CORP
CORPORATION
公司
COOP
COOPERATION
国际商务英语函电常用缩写（二）
CL
CLASS;CLAUSE;CLERK
级，条款，职员
CM
CENTIMETRE
公分
CMDTY
COMMODITY
商品
C.N.;C/N
CREDIT NOTE
收款通知，货款清单
CNCL
CANCEL
撤销
CNCLSN
CONCLUSION
结论，商定
CNSDRTN
CONSIDERATION
考虑
CNT
CONTRACT
合同，契约
C.O.
CERTIFICATE OF ORIGIN
原产地证明书
C/O
CASH ORDER;CARE OF

高中英语选修六单词表

fragrant [^][ freigrant] adj.香的:令人愉快的contemporary [英][kan'tempren] adj.当代的；同时代的permanent [英]「p3：manant] adj,永久的；持久的district [英H'distnkt] n.区;区域：行政区committee [英][ka'miti] n.委员会signature [^K signatfafr〕] n.署名:签字Unit 2poetry[^ICpauatn] n.诗〔总称〕;诗意tick [英][tik] vt.给............... 标记号rhyme [英][raim] n.韵：押韵；押韵的词<vi. & vt.〔使〕押韵convey [英][ken'vei] vt.传达：运送emotion[^][i'mdufdn] n,情感：情绪：感情nursery [英]「n3：san] n.托所nursery rhyme [^][ ne:sari raim] 童谣concrete [英]「kDrjkrtt] adj.具体的repetition[^Jl.repa'tifn] n.重复；反复：循环contradictory [ kontra^ikteri] adj.引起矛盾的:好反驳的hush[^][hAf] vi. & vt.〔使某人〕安静下来diamond [英][,daiamand] n,钻石；菱形Jbrass [英][bra:s] n.黄铜：黄铜器billy-goat[^H'bilirg'aut] n.公山羊flexible [^][ ffleksabl] adj.灵活的；可弯曲的:柔顺的pattern [^]['paetn] n.模式：式样：图案squire[英]['skwaia〔r〕] n.乡绅cottage [英]「kDtidj] n.村舍:小屋c.//.[英U'kDfin] n.棺材sparrow [英]「spaerau] n.麻雀kitten[英]['kitn] n.小猫take it easy [^]〔teik it i:zi]轻松:不紧张：沉着Arun out of [^][rAn aut ov]用完be made up of [英][bi: meid Ap ov] 由.... 构成tease [英]vi. & vt.取笑；招惹：戏弄salty [^IPsoJti] adj.含盐的；咸的droop[^][dru:p] vi,低垂；凋萎;萎靡dread[英][dred] vi. & vt.害怕:畏惧endless[英][endlas] adj.无穷的；无止境的syllable[英]「silabl] n.音节minimum [英]fminimam] n.最低限度:最少量：最小数translation [英][traens'leijn] n.译：译文Ibranch [^][bra:ntf] n.枝条：支流；部门melt[^][melt] vi.融化；溶化：软化brimful[^][ brimful] adj.盈满的；满到边际的in particular [英][in pd tikjula]尤其:特别eventually [^Kiventjuali] adv.最后：终于await[^][a'weit] vt.等候：期待transform [英][traens'bm] vi. & vt.转化：转换: 改造；变换revolve[英]T I'VD I V] vi. & vt.〔使〕旋转utter[^]['Atd〔r〕] vt.说：讲：发出〔声音〕sorrow [英]T SIH M n.悲伤:悲哀:懊悔<bare [英][bea〔r〕] adj.赤裸的：光秃的:稀少的n.最根本的要素librarian [^[lai'brearidn] n.图书馆馆长；图书馆管理员forever [英][fer'eva〔r〕] adv.永远stem [英][stem] n.茎；干ccmeot [英][si'ment] n.水泥section [^K'sekfn] n.局部;V J：切下的块appropriate [d'prdupnat] adj.适当的:正当的exchange[英][ikstjeindj] n.交换：交流：互换vt.&vi.调换;交换Idiploma [英][di'plauma] n,毕业文凭;学位证书sponsor [^K'sponsdfr〕] n.赞助人；主办者;建议者vt.发起：举办：建议blank [英][blaerjk] n.空白adj.空白的：茫然的compass [英]['kAmpas] n.指南针：罗盘：〔复数〕圆规championship [^]['tfaempidnfip] n.冠军称号rhythmic [^K'ndmik] adj.有节奏的:有规律的darkness [英]「dcrknas] n.黑暗:漆黑warmth [^][wo:m9] n.暖和:温暖try out [英][trai aut]测试：试验scholarship [^K'skolafip] n.奖学金；学问;学术成就Apianist [^[ pianist] n.钢琴家；钢琴演奏者violinist [^][ vaid'linist] n.小提琴演奏者let out [英中et aut]发出：放走load [^][laud] n.负担：负荷物〔尤指沉重的〕Unit 3cigarette [^][ siga ret] n.香烟；纸烟alcohol[^JCaelkahol] n.酒：酒精alcoholic [英][.矣Ika'hHik] adj.酒精的abuse [英]Q'bju:s] n. & vt.滥用;虐待/iSess [英][ fitnas] n.健康Asexua/[英][ sekju训adj.性的：性别的stress [^][stres] n.压力；重音vt.加压力于；使紧张stressful [^H'stresfl] adj.产生压力的；紧张的obesity [英][Mbi:s刈n.〔过度〕肥胖;肥胖症adolescent [ aedd lesnt] n.青少年adj.青春期的adolescence [^][ aed0 lesns] n.青春明] ban [英][baen] vt.禁止；取缔n.禁令：谴责due [英][dju:] adj.欠款的：预定的:到期的due to [英Hdju： tu:]由于9tough [英HtAf] adj.困难的；强硬的addicted [英旧diktid] adj.入了迷的:上了瘾的addicted to 对……有瘾nicotine[英][ nikati:n] n.尼古丁accustom [英]Q'kAstam] vt.使习惯于accustomed][d'kAstamd] adj.惯常的：习惯了的accustomed to 习惯于......withdrawal英][wddo:训n.收回；撤退：戒毒〔或脱瘾〕过程bad-tempered[英][baed'tempad] adj.脾气暴躁的；易怒的automatic 〔oztd'maetikj adj.无意识的：自动的automatically [英儿Tta'maetikh] adv.无意识地:自动地mental [^K'mentl] adj.精神的:智力的mentally[^K'mentdli] adv.精神上:智力上quit[英][kwit] vt.停止〔做某事〕:离开effect[英M/fekt] n.结果：效力lung [英川AIJ] n.肺pregnant [^[ pregnant] adj.怀孕的abnormal [英]俄adj.畸形的：异常的breathless [^][a bre9lds] adj.气喘吁吁的:屏息的unfithn'fit] adj.不健康的:不适宜的:不合格的<strengthen [英MstrerjOn] vt.增强：稳固:使坚强vi.变强resolve[^Jlri'zolv] n.决心:决定decide on [英][di'said on]对.... 作出决定packet [英][ paekit] n.小包：小盒feel like 〔doing〕想要〔做〕...........relaxation [^Jl/idaek'seifn] n.放松；松弛desperate [^K'desparat] ] adj.绝望的；拼命的chemist [英H'kemist] n.药剂师；化学家gum[英][gAm] n,树胶/chewing gum[英][tjuurj] □香糖disappointed [ disa p3intid] adj.失望的；沮丧的waake/?[英HVkkan] vi.〔对某事的决心〕动摇：减弱vt.〔使〕变弱ashamed [英Ha'Jeimd] adj.感到惭愧或羞耻的comprehension [^][ kDmpri henfnJ n.理解〔力〕in spite of [英][in spait ov]不顾；不管take risks 〔a risk〕冒险get into陷入：染上〔坏习惯〕etc 〔et cetera〕 adv.诸如此类的事物；等等appendix [英]Q'pendiks] n,附录;附件illegal [英adj.不合法的:违法的pill [英即山n.药丸:药片robbe/y [英]"Dban] n.抢劫；盗窃slippery[英]「shpari][美][ shpari] adj.滑的at risk 处境危险：遭受危险/Tnmuce [英][i'mju:n] adj.有免疫力的survival [英][sa vaM] n,幸存；幸存者sex [英][seks] n.性：性别fluid[^][B flu:id] n.液体：流体inject[^Kin'djekt] vt.注射rinjection[^][in djekfn] n.注射；注射剂needle[英]rni:dl] n.针;〔注射器的〕针头spill[^][spil] vi.溢出：洒落vt.使溢出：使洒落male [^][meil] adj.男性的：雄性的n.男人：雄性动〔植〕物female [^][a fi:meil] adj.女性的:雌性的n.雌性的动〔植〕物：女人condom[英]「kDndDm] n.避孕套prejudice [英H'predjudis] n.偏见：成见judgement ['djAdjmant] n.看法；判决；判断abortion [^Ka'bxfan] n.流产:中途失败cigar [英Hsi'gci:〔rj] n.雪茄烟embarrassed [英][im'baerast] adj.为难的：陷入困境的awkward [英][b:kwad] adj.局促不安的;笨拙的Unit 4consume [^][kdn'sju:m] vt.消费：消耗：耗尽：吃完renewable[ri'nju：dbl] adj.能再生的：可更新的greecbouse [英][,grimhaus] n.温室：花房come about 发生：造成〔graph英][graef] n.图表：坐标图：曲线图random [英]「raendam] adj.胡乱的：任意的phenomenon [fa^omindn]〔复数-ena〕 n.现象subscribe [^][sdb'skraib] vi.同意；捐赠；订阅vt.签署〔文件〕：捐助subscribe to 同意:赞成:订购fossil['fosl] n.化石：从地下采掘出来的〔矿物〕fuel [英]「fju:al] n.燃料byproduct[^^"bai prDdAkt] n.副产品methane[^]['mi:0ein] n.甲烷:沼气quantity [^][,kwontdti] n.量；数量quantities of 大量的tend [英][tend] vi.趋向：易于:照顾vt.照顾：护理go up上升：增长；升起measurement['mejamant] n,衡量；测量：尺寸per [英][p;〔ij][美][p*] prep,每：每一data [英]['delta] n.资料；数据result in 导致trend [英][trend] n.趋势：倾向：走向¥catastrophe [^][kd'taestrdfi] n.大灾难：浩劫flood [英][flAd] n.洪水；水灾drought[^][draut] n.旱灾：干旱/am/oe [英]「faemin] n.饥荒oppose [d'pauz] vt.反对；对抗；与〔某人〕较量opposed[英][a'pauzd] adj.反对的；对立的be opposed to 反对 ........mild [英][maild] adj.温和的；温柔的：淡的environmental[^][m vairan'mentl] adj.环境的environmentalist[^][m vairan'mentdlist] n.环境保护论者〕consequence [ lonsikwdns] n.结果；后果：影响state [英][steit] vt.陈述：说明range [英][reindj] n.种类:范围even if [英]「i:van if]即使keep on [英][ki:p on]继续glance [^][gla:ns] vi.看一下:扫视n. 一瞥steady [英]「stedi] adj.平稳的；持续的；稳固的steadily [英]['sted山]adv.平稳地：持续地tendency [英]「tendansi] n.倾向；趋势widespread[英][waidspred] adj.分布广的；普遍的.on the whole 大体上：根本上economical[^Kjzkd'nomikl] adj.行约的；经济的hectare[英]]hektea〔rj] n.公顷average[英][,aevandj] adj.平均的existence [英][ig'zistans][美][ig'zistans] n.生存：存在outer [^H'aotafr〕] adj.外部的；外面的on behalf of [英]bn bi'ha:f DV]代表....... . 方；作为……的代言人individual[^ll.indi vidjual] n.个人；个体adj.单独的；个别的advocate [英]「aedvakeit] vt.拥护；提倡：主张• ••commitment [kd'mitmdnt] n,承诺；交托：信奉put up with [英][put Ap wid]忍受：容忍pollution[英][pa'lujn] n.污染;弄脏growth [英][grau.] n.增长；生长electrical [^Ki'lektrikl] adj.电的：与电有关的appliance[^][d'plaidns] n.用具；工具：器具so long as [英][sau brj aez]只要casual [英][ kaewal] adj.随便的：漫不经心的：偶然的and so on 等等motor [英]「mau3〔tj] n.发动机can [英][kaen] n.容器:罐头circumstance [英][*s3：kamstans] n.环境：情况microwave [英]「maikraweiv] ] n.微波炉；微波refresh [英HnWrej] ] vt.使恢复:使振动educator [ edjukeitdfr)] n.教育工教育家contribution [^][ kDntri bju:fn] n.奉献imperative[^Kim'perativ] n.祈使语气;命令heading[英][,hedirj] n.标题slogan [英]「slaugen] n.标语：口号•presentation [英]Lprezn'teijn] n.显示；演出nuclear [ nju:klid(r)] adj.核的；核能的；原子核的disagreement [^][ disd'gri:mdnt] n.分歧：不一致Unit 5diagram [英Mdaiagraem] n.图解：图表：示意图volcano [英][vDl'keinau] n.火山erupt [英】U'nvpt] vi.(指火山)爆发：忽然发生eruption (1'rApfn] n.火山爆发：(战争等)爆发ash [英][aef] n.灰：灰末crater[英]「kreita(r)] n.火山口;弹坑lava[^]['la:va] n.(火山喷出的)熔岩；火山岩hurricane [英]「hAnkan] n.,飓风：风暴questionnaire [ kwestja'neafr)] n.问卷；调查表alongside [^[d.lorj said] adv.在旁边:沿着边prep.[英][prep]在.... 旁边:沿着..... 的边equipment [^][i'kwipmdnt] n.设备：装备appoint [英]Qgnt] vt.任命；委派observatory[^Kab'za^dtn] n.观象台;天文台; 气象台database [英]「deitabeis] n.数据库：资料库evaluate [^Hi'vaeljueit] vt.评估:评价：估计burn to the ground [be:n tu: da graund]全部焚毁wave [英][weiv] n.波浪：波涛vi.波动；起伏；挥手英]rmaultan] adj.熔化的：熔融的fountain [英]「fauntan] vi. & vt.泉水般地喷出或涌出n.喷泉：源泉absolute [^][ aebsdlu:t] adj.绝对的：完全的absolutely[英][aebsalu:tli] adv.绝对地；完全地spaceman [^]['speismaen] n.宇航员：航天专家suit[su:t] n. 一套外衣;套装vt.适合；使适宜¥helmet [英]「helmit] n.头盔boot [^][bu:t] n.靴子make one' s way [英Rmcik WAOZ wei]前往potential[英][paten川n.潜在性：可能性：潜能adj.可能的：潜在的actual [英][aektju训adj.实在的：实际的geology [英][d引'Had列n.地质学samp/e [英]rsa:mpl] n.样品；样本candidate [英]['kaendidat] n.候选人：候补者tb/eat [英][Oret] n.恐吓：威胁Ibungalow [英]「bAtjgalau] n.平房；小屋tomado [英][tx'neidau] n.龙卷风；旋风typhoon [英]n.台风thunderstorm [英]['0Andast):m] n.雷暴precious [英]「pr*s] adj.贵重的：珍贵的novelist [英]['rwvahst] n.小说家fog [英][fog] n.雾document [英]「dDkjumant] n.文件：证件rainbow [英]「reinbau] n.彩虹uncomfortable[英][An'kAmftabl] adj.不舒服的：不舒适的balcony [英][baelkam] n.阳台unconscious [英][An'kDnJas] adj.失去知觉的：未发觉的shoot [英]vt.射中：射伤shot [英][jDt] n.射击;枪炮声tremble [^][,trembl] vi.摇晃：摇动；颤抖sweat [英][swet] n.汗vi.出汗anxious [^][ aer)kfas] adj.忧虑的：不安的anxiety [^][aer)'zaidti] n.担忧：焦虑：渴望panic [英][,paenik] vi. & vt.惊慌n.惊慌；恐慌tsucamj [英][tsuTncrmi] n.海啸：地宸海啸glance through [英][glci:ns 0ru:]匆匆看一遍vary from…to… 由....................... 到... 不等diverse [英][daiS:s] adj.多种多样的:不同的diversity [英][daigsati] n.多种多样：多样性crane[^][krein] n.鹤：吊车：起重机leopard[^K'lepad] n.豹spectacular[^][spek'taekjdld(r)] adj.引人入胜的：壮观的bathe [英HbeiG] vi.洗澡：游泳arouse英][a'rauz] vt.激发：唤醒某人appreciation [a.priji'eifn] n.欣赏:感谢；感谢peak [英][pi:k] n.山顶：顶峰persuasion[^Upd'sweijn] n.信服；说服guarantee [^[.gaeran'ti:] vt.保证；担保。

基于51单片机公交车自动报站系统的设计,开题报告,贾彦坤

毕业设计（论文）开题报告设计（论文）题目: 基于51单片机的电子报站系统设计院系名称: 电气与信息工程学院专业班级: 自动化08-1班****: ***导师姓名: 谢忠玉开题时间: 2012年3月28日指导委员会审查意见：签字：年月日1. 课题研究的目的和意义目的：现今社会，公交事业关乎到大多数城市居民的出行，但公交车上的传统的人工按键报站依然无法满足大家对其的要求。

主要表现为：(1)报站不准确，由于司机在操作报站系统时经常会按错键或忘记按键，而且在调整系统时会连续报出几个站点，让不熟悉路线站点的乘客不知所措；(2)安全隐患，每次报站时都需要由驾驶员对报站器进行操作，而在车辆起动与进站时，往往是路面情况最复杂的时候，驾驶员既要对行驶中的汽车进行起动或制动等操作，同时还要兼顾报站系统的操作，给行驶中的车辆带来一定的安全隐患。

公交车自动报站器的设计主要是为了弥补传统人工语音报站的落后方式，使进站、出站及服务用语的信息实现自动播报，为市民提供更人性化，更完善的服务，以减少各种可能产生不必要的交通流量，提高公交的运作效率[1]。

意义：我国相当数量的中小城市的机动车保有量已经达到几乎饱和的程度，大力发展城市公共交通已经成为城市管理者解决城市拥堵的主要措施。

给乘坐公交车出行的人们提供舒适便捷已经成为公交系统的主要任务，作为一个城市的公交企业，它既要代表政府体现当地城市的形象，又要尽一切力量减少政府投资，创造良好的社会效益和经济效益。

而传统的公交运营系统的装备和管理模式较难达到这两者的完美结合。

随着科学技术的发展，公交应用系统带给公交企业的将不仅是形象的提升，也是效益的增长。

虽然现在已经有些车上已经采用GPS定位系统自动报站，但其昂贵的成本，难以实现普及。

为了实现城市公交车的自动报站，设计了一套低廉、高性能的城市公交车自动报站系统系统具有一定的现实意义。

而对我么应届毕业生而言，通过设计可以使我们初步掌握单片机的工作原理和使用方法。

国际商务英语函电常用缩写2

直径
DIFF
DIFFERENCE
差额，剩余
DIR
DIRECTOR
董事
DIS;DISC;DISCT
DISCOUNT
折扣
DIST
DISTRICT
地区
DIV
DIVIDEND
红利，股息
;DK
DOCK
船坞，码头
DLS
DOLIARS
元
DLT
DAY LETTER TELEGRAM
书信电
DMቤተ መጻሕፍቲ ባይዱ
DECIMETRE
公寸
D/N
DEBT,DEBIT
借，借方
D/D .
DEMAND DRAFT
即期汇票
DE.;DEF
DEFERRED
延迟
DEB
DEBENTURE
退税证明书
DEBT
DEBTOR
借方
DEC
DECEMBER
十二月
DECSN
DECISION
决定
DESCV
DECISIVE
决定性的
DEG
DEGREE
等级，程度
DELY
DELIVERY
交货
DEM
DEMURRAGE
延期费
DEP
DEPOSIT,DEPUTY
存款，代理
DEPT;DPT
DEPARTMENT
部，科，处
DEVELOPG
DEVELOPING
发展
;
DEAD FREIGHT
空舱费
DIS
THIS
这个
DISAPNTD
DISAPPOINTED
失望
DRT
DRAFT
汇票

需求不明推迟中国跃升MOCVD装机量全球第一

止补贴政策，因此在今年上半年开始大量采购ＭＯＣＶＤ机台，希望赶上补助政策有效期。
然而，由于货币紧缩政策影响，国内ＬＥＤ
企业的财政补贴金额取得不易，影响扩产进度，加上整体终端销售不振与芯片价格大幅下降等因素，部分ＬＤ芯片厂商产能利用率下降Ｅ至五成，生产用机台转为工程研发用。因此各
中指出，中国ＬＤ市场正呈现不寻常的增长，Ｅ
在这种背景下，ＬＤ产业不仅需要关注专利、Ｅ
当地厂商不断提高ＬＥＤ产业的投资规模，可望产品性能、质量等方面的发展，还需关注将在在２１年成为ＭＯＣＶＤ设备累计装置量全球第价格与产量方面带来莫大影响的中国市场的动０２
计装机量将较去年同期增长６．％，成为全球４２
ＭＯＣＶＤ设备累计装机量第一大国。 ’
Ｄｉｐａｂｎ资深分析师Ｂｒａｅ示，ｓｌｙａｋｉｎＢａ表
除此之外，中国为因应通货膨胀，不断调
■■■■■■■●■－ ■■ ■ 誓 ■■－ ■■ ■—■＿ ■ 图１各国ＭＯＣＶＤ设备累计装置量预测
３ｍｔ１
守态度。ＬＤｉｓｄ预估，２年ＭＯＣＶＤ新Ｅｎｉｅ０１１

英语长单词集合

英语长单词集合(总7页) -CAL-FENGHAI.-(YICAI)-Company One1-CAL-本页仅作为文档封面，使用请直接删除international[,int'nnl]adj国际的organization[,:ɡnai'zein]n组织；机构communication[k,mju:ni'kein]n交流通讯independent[,indi'pendnt]adj独立自主的transportation[,trnsp'tein]n运输；运送transportation[,trnsp'tein]n运输；运送similarity[,simi'lriti]n类似；类似处unforgettable[,nf'ɡetbl]adj难忘的opportunity[,p'tju:niti]n机会；时机apologise['pldaiz]vi英=apologize（美）道歉preparation[,prep'rein]n准备；预备professionaladj[pru'fenl]专业的；职业competitor[km'petit]n竞争者，对手disagreement[,dis'ɡri:mnt]n不一致；分歧environmental[in,vairn'mentl]adj环境的announcement['naunsmnt]n宣告；公告intelligence[in'telidns]n智力；聪明；智能invitation[,invi'tein]n邀请；邀请信commercial[k'm:l]adj商业的；贸易的generation[,den'rein]n一代destruction[di'strkn]n破坏；毁灭generation[,den'rein]n一代（人）dormitory['d:mitri]宿舍application[,pli'kein]n应用,实施,用途disadvantage[disd'vɑ:ntid]n不利；不利条件conclusion[kn'klu:n]n结束；结论thunderstorm['θndst:m]n雷雨；雷暴experiment[ik'speriment,ek's-]n实验；protection[pru'tekn]n保护；防卫agricultural[,ɡri'kltrl]adj农业的；农艺conference['knfrns]n会议；讨论会humourous['hju:mrs]adj（＝humorous）富于幽默感的；滑稽的interpretation[in,t:pri'tein]n解释；阐明appreciate['pri:ieit]vt赏识；鉴赏；感激attraction['trkn]n．吸引人的事物；吸引；吸引力conservation[,kns'vein]n（自然资源的）保护；管理；保存imagination[i,mdi'nein]n想像（力）；空想helicopter['helikpt]n直升（飞）机perspiration[,p:sp'rein]n.汗水;出汗radioactivity[,reidiuk'tivti]n.放射性;放射现象;放射线misunderstand[,misnd'stnd]vt.(misunderstood,misunderstood)误解;误会observation[,bz:'vein]n.注意;观察;观测exploration[,ekspl:'rein]n.探究;考察;勘探interviewee[,intvju:'i:]n.被接见者;被采访者;被面试者introduction[,intr'dkn]n.序言;介绍;引进atmosphere['tm,sfi]n.气氛;情绪;大气;大气层stadium['steidim]n.(有看台的)露天体育场extraordinary[ik'str:dnri]adj.特别的;不平常的;惊人的contribute[kn'tribju:t]vi.作出贡献contemporary[kn'temprri]adj.当代的;现代的;consumer[kn'sju:m]n.消费者;用户;客户definition[,difi'nin]n.定义;解释contagious[kn'teids]adj.(指疾病)接触(传)染的;(情绪等)感染性的motorcycle['mut,saikl]n.摩托车premier['premj,pri'mi,'pri:m-]n.总理;首相responsibility[ri.spns'biliti]n.责任;责任心;职责cooperation[ku,p'rein]n.合作;配合representative[,repri'zenttiv]n.代表;典型;议员explanation[,ekspl'nein]n.解释;说明;阐述thermometer[θ'mmit]n.温度计;体温表sustainable[s'steinbl]adj.能持续的;能维持的;能承受的constitution[,knsti'tju:n]n.宪法economic[,i:k'nmik]adj.经济的；经济学的；foundation[faun'dein]n.基础；建立rejuvenate[ri'd?u:vineit]vt.&vi.（使）恢复（青春）活力；（使）返老还童impressive[im'presiv]adj.给人深刻印象的companion[km'pnjn]n.同伴；同伙collision[k'lin]n.碰撞；（利益、意见等）冲突relationship[ri'leinip]n.关系；联系；亲属关系demonstration[,demn'strein]n.游行；集会；discrimination[dis,krimi'nei?n]n.歧视；区别independence[,indi'pendns]n.独立；自主；unconditional[,nkn'dinl]adj.无条件的arrangement['reindmnt]n.安排；unemployment[,nim'plimnt]n.失业（状态）；失业众人数reconstruction[,ri:kn'strkn]n.重建；重建物economical[,i:k'nmikl]adj.经济的；节约的segregation[,seɡri'ɡei?n]n.隔离；分离injustice[in'd?stis]n.不公平；非正义financial[fai'nnl]adj.财务的；金融的；disability[,dis'bilti]n.伤残；无能；无力encouragement[in'kridmnt]n.鼓励；促进accessible[k'sesbl]adj.可以使用（或得到）的；能进入的motivate['mutiveit]vt.使有动机；激发background['b?kɡraund]n.背景possibility[,ps'bilti]n.可能（性）；可能的事connection[k'nekn]n.联系；关系；联结reasonable['ri:znbl]adj.合乎情理的；讲理的consequence['knsi,kwns]n.结果；后果；影响archaeological[,ɑ:ki'ldikl]adj.考古学的archaeologist[,ɑ:ki'ldist]n.考古学家decoration[,dek'rein]n.装饰；装潢requirement[ri'kwaimnt]n.需要；规定distinction[dis'tikn]n.差别；对比accompany['kmpni]vt.陪伴；陪同investigation[in,vesti'ɡein]n.调查研究punishment['pnimnt]n.惩罚administration[d,mini'strein]n.管理；行政（机关）；经营concentrate['knsntreit]vi.集中；全神贯注vt.集中；聚集；浓缩rhinoceros[rai'nsrs,ri-]n.犀牛dedication[,dedi'kein]n.忠诚；奉献technological[,tekn'ldikl]adj.技术的pronunciation[pru,nnsi'ein]n.发音；发音方式immigration[,imi'ɡrein]n.移民aboriginal[,b'ridnl]adj.土着的procedure[pr'si:d]n.步骤；程序；手续identification[ai,dentifi'kein]n.验明；鉴别consideration[kn,sid'rein]n.考虑；体贴nutritional[nju:'trinl]adj.营养（品）的promotion[pru'mun]n.（商品等）宣传；推销；促进；提升anniversary[,ni'v:sri]n周年纪念(日)granddaughter['ɡrn,d:t]n.（外）孙女comprehension[,kmpri'henn]n.理解（力）fundamental[,fnd'mentl]adj.基本的；根本的prosperity[pr?s'periti]n.繁荣；成功proficiency[pru'finsi]n.熟练；精通insurance[in'urns]n.保险；保险业；significance[siɡ'nifikns]n.意义；重要性expectation[,ekspek'tein]n.预料;期待;期望questionnaire[,kwest'nε,,kes-]n.问卷;调查表bureaucratic[,bjuru'krtik]adj.官僚的;官僚制度的contradictory[,kntr'diktri]adj.互相矛盾的;互相对立的congratulate[kn'ɡrtu,leit]vt.祝贺;庆贺combination[,kmbi'nein]n.结合;混合物compulsory[km'plsri]adj.义务的;有责任的;必须做的corporation[,k:p'rein]n.公司;法人团体presentation[,prezn'tein,,pri:-]n.描述;介绍;提出transparent[trns'prnt]adj.透明的enthusias m[in'θju:zizm]n.热心;热情satisfaction[,stis'fkn]n.满意;满足competitive[k?m'petitiv]adj.比赛性的;好竞争的tournament['tunmnt,'t:-,'t:-]n.联赛;比赛;锦标赛。

幼儿身高体重分析表

年龄中上中下2sdisdisdisdisd2sd体重千克身高公分胸围公分头围公分超过臂围公分低于二你孩子目前体型如下
中心幼儿园儿童身高、体重测量分析表
姓名：
性别：
出生：
年
月
日
（一）你孩子目前体格发育评价：
年龄
体重千克身高公分胸围公分头围公分臂围公分
岁月
上
中上中+
X-
X-
2SD
ISD
ISD
（二）你孩子目前
1. 匀称型
（三）根据你孩子年龄、体重、身高分析，其营养状况如下：
中- 中下
下
┄
┄
┄
ISD#43; 优+
中++
中+
中
差差+ 差++
超过（四）你孩子目前体重
低于属于：
1.体重正常
3.营养不良I型
5.营养不良III型
标准体重
%
2.肥胖 4.营养不良II型
注：1.符合项目用√或○表示；2.说明：优++（肥胖），优+（目前营养良好），优（目前营养好，过去营养不良）；中++（高个子，营养正常），中+（营养正常），中（目前营养正常，过去营养不良）。差（目前营养不良）。差+（目前营养不良）。差++（目前营养不良++）。3.X包括在X-ISD内。
报告人：
报告日期：年月日

NS4110B 宽电压5V-18V 20W单声道音频功放IC

NS4110B 超低EMI，差分输入，20W 单声道AB/D 类音频功率放大器1特性●工作电压范围：6V-14V ●输出功率：7W （CLASS D ，7.4V/4Ω，THD=10%）10W （CLASS D ，9V/4Ω，THD=10%）18W （CLASS D ，12V/4Ω，THD=10%）●最高可达92%效率（12V/8Ω）●电平设置工作模式●无需输出滤波器●差分输入●优异的“上电，掉电”噪声抑制●过流保护、过热保护、欠压保护●eSOP-8封装2应用范围●大功率蓝牙音响●移动音箱扩音器●其他消费类音频设备3说明NS4110B 是一款差分输入，超低EMI ，无需滤波器，20W 单声道ABD 类音频功率放大器。

可通过不同电平控制芯片的工作模式：CTRL 脚电压为2.0V 以上时，芯片进入D 类工作模式，0.9-1.6V 时芯片进入AB 类工作模式，0.5V 以下时芯片关断，应用灵活方便。

NS4110B 采用先进的技术，在全带宽范围内极大地降低了EMI 干扰，最大限度地减少了对其他外部元件的影响。

其输出无需滤波器的PWM 调制结构减少了外部元件、PCB 面积和系统成本。

NS4110B 在12V 的工作电压时，能够向4Ω负载提供高达18W 的输出功率，90%以上的效率更加适合便携式音频系统。

NS4110B 内置过流保护、过热保护及欠压保护功能，有效保护芯片在异常工作状况下不被损坏。

NS4110B 提供eSOP-8封装，额定的工作温度范围为-40℃至85℃。

4典型应用电路:5管脚配置eSOP-8的管脚图如下图所示：编号管脚名称管脚描述1CTRL模式控制端2BYPASS内部参考电压外接去耦电容3INP放大器正输入端4INN放大器负输入端5VON输出负端6VDD电源输入7GND电源地8VOP输出正端6极限工作参数●输入电压范围6V~14V ●CTRL管脚电压0V~5V ●ESD电压2000V ●工作温度范围-40℃~+85℃●存储温度范围-65℃~+150℃●最大结温+150℃●焊接温度（10s内）+220℃●θJC/θJA10/60o C/W 注：超过上述极限工作参数范围可能导致芯片永久性的损坏。

新课标高一英语必修一单词表

新课标高一英语必修一单词表Module 1academic [,k'demik] adj. 学术的province ['prvins] n. 省enthusiastic [in,θju:zi'stik] adj.热心的,amazing ['meizi] adj.令人吃惊的；令人惊讶的information [,inf'mein] n. 消息website [ web’sait] n.网站；网址brilliant ['briljnt] adj.(口语)极好的comprehension [,kmpri'henn] n. 理解,领悟instruction [in'strkn] n.（常作复数）指示；说明method ['meθd] n. 方法bored ['b: d] adj.厌烦的；厌倦的embarrassed [im'brst] adj.尴尬的；难堪的；困窘的attitude ['titju:d] n. 态度behaviour [bi'heivj] n. 行为；举动previous ['pri:vis] adj.以前的；从前的description [di'skripn] n.记述；描述amazed ['meizd] adj. 吃惊的;惊讶的embarrassing [im'brsi] adj.令人尴尬的；令人难堪的technology [tek'nldi] n. 技术impress [im'pres] vt.使印象深刻correction [k'rekn] n. 改正；纠正encouragement [in'kridmnt] n. 鼓励；激励enjoyment [in'dimnt] n.享受；乐趣fluency ['flu:nsi] n.流利；流畅misunderstanding [,misnd'stndi] n. 误解disappointed [,dis'pintid] adj. 失望的disappointing [,dis'pinti] adj.令人失望的system ['sistm] n. 制度；体系；系统teenager ['ti:nid] n.少年disappear [,dis'pi] vi. 消失move [mu:v] adj.搬家assistant ['sistnt] n. 助手, 助理cover ['kv] vt.包含diploma [di'plum] n. 文凭, 毕业证书|Module 2amusing ['mju:zi] adj. 有趣的；可笑的energetic [,en'detik] adj. 精力充沛的intelligent [in'telidnt] adj. 聪明的nervous ['n:vs] adj.紧张的；焦虑的organized [':gnaizd] adj.有组织的；有系统的patient ['peint] adj.耐心的serious ['siris] adj. 严肃的shy [ai] adj.害羞的；羞怯的strict [strikt] a. 严格的；严厉的impression [im'pren] n. 印象avoid ['vid] vt.（故意）避开hate [heit] vt.讨厌；不喜欢incorrectly [,ink'rektli] adv.不正确地completely [km'pli:tli] adv. 十分地;完全地immediately [i'mi:ditli] adv.立即；即刻appreciate ['pri:ieit] vt.感激admit [d'mit] vt. 承认scientific [,sain'tifik] adj. 科学的literature ['litrt] n. 文学loudly ['laudli] adv. 大声地wave [weiv] vt.挥（手）；招（手）joke [duk] n. 玩笑；笑话summary ['smri] n.总结；摘要；提要respect [ri'spekt] vt.&n.尊敬；尊重grade [greid] n.（美）成绩；分数headmaster ['hed'mɑ:st] n.校长headmistress ['hed'mistris] n.女校长period ['pirid] n.一段时间revision [ri'vin] n.复习translation [trns'lein] n. 翻译timetable ['taimteibl] n. 时间表topic ['tpik] n.话题；题目vacation [vei'kein] n. 假期revise [ri'vaiz] vt.温习（功课）discipline ['disiplin] n.纪律relationship [ri'leinip] n. 关系formal ['f:ml] adj. 正式的relaxed [ri'lkst] adj.轻松的；松懈的；宽松的similarly ['similli] adv.同样地，类似地Module 3helicopter ['helikpt] n.直升飞机motorbike ['mut, baik] n.摩托车tram [trm] n.电车distance ['distns] n. 距离abandoned ['bndnd] adj.被遗弃的camel ['kml] n. 骆驼cassette [k'set] n.录音带desert ['dezt] n. 沙漠diamond ['daimnd] n. 钻石expert ['eksp:t] n. 专家midnight ['midnait] n. 半夜product ['prdkt] n. 产品scenery ['si:nri] n. 风景; 景色shoot [u:t] vt.(shot,shot)射杀soil [sil] n. 土壤journey ['d:ni] n. 旅程train [trein] vt. 训练circus ['s:ks] n. 马戏团seaside ['si:said] n. 海滨stadium ['steidim] n. 运动场；体育场eagle ['i:gl] n. 鹰frighten ['fraitn] vt.是吃惊；惊吓kindergarten ['kind,gɑ:tn] n.幼儿园apartment ['pɑ:tmnt] n.（美）公寓；单元住宅cartoon [kɑ:'tu:n] n. 卡通；漫画interview ['intvju:] n.面试；面谈interviewer ['intvju:] n.（面试时的）主考官；面谈者event [i'vent] n. 事件exhausted [ig'z:stid] adj.疲惫不堪的downtown ['daun'taun] adj.商业区的；市中心的vacuum [`'vkjum] n. 真空；空白rail [reil] n.铁轨ceremony ['serimni] n.仪式track [trk] n. 轨道souvenir [,su:v'ni] n. 纪念品Module 4survey [s'vei] n. 调查neighbourhood n.四邻local ['lukl] adj.地方的；局部的suburb ['sb:b] n.城郊；郊区hometown [hum'taun] n.家乡attractive ['trktiv] adj.有吸引力的;吸引人的fortunate ['f:tnit] adj.幸运的；吉祥的pretty ['priti] adv.很；相当sound [saund] vi.听起来tourist ['turist]n.旅游者；观光客bother ['be] vt.打扰；烦扰；麻烦nuisance ['nju:sns] n.令人讨厌的人或事rent [rent] n. 租金district ['distrikt] n.地域；区域；行政区approach ['prut] vt. 接近harbour n.海港gorgeous ['g:ds] adj.美丽的；宜人的architecture ['ɑ:kitekt] n. 建筑starve [stɑ:v] vi.饿死park [pɑ:k] vt. 停车traffic ['trfik] n. 交通committee [k'miti] n. 委员会organization [':gnai'zn] n.组织unemployed [,nim'plid] adj.失业的；没有工作的household ['haushuld] n.家属；家人occupation [,kju'pein] n. 职业professional [pr'fenl] adj.专业的manual ['mnjul] adj.用手的；手的employment [im'plimnt] n.就业；工作；职业gallery ['glri] n.美术馆；画廊exchange [iks'teind] vt. 交换fascinating ['fsineiti] adj. 迷人的, 吸引人的afford ['f:d] vt. 买得起;有能力支付survive [s'vaiv] vi.死里逃生；大难不死contact ['kntkt] vt.联络；联系（某人）Module 5liquid ['likwid] n. 液体expand [ik'spnd] vi.膨胀contract ['kntrkt] vi.收缩substance ['sbstns] n. 物质mixture ['mikst] n.混合物oxygen ['ksdn] n. 氧气electricity [,ilek'trisiti] n. 电stage [steid] n. 阶段；时期conclusion [kn'klu:n] n. 结论aim [eim] n. 目标；目的reaction [ri'kn] n. 反应electrical [i'lektrikl] adj.与电有关的；用电的equipment [i'kwipmnt] n. 设备；装备react [ri'kt] vi.（化学）反应potassium n. 钾sodium ['sudim] n. 钠calcium ['klsim] n. 钙magnesium [mg'ni:zim] n. 镁aluminium [,lju'minim] n. 铝zinc [zik] n. 锌partial ['pɑ:l] adj.部分的；局部的copper ['kp] n. 铜oxide ['ksaid] n. 氧化物rust [rst] vi. 生锈boil [bil] vt.生锈ordinary [':dinri] adj. 普通的;平常的steam [sti:m] n. 蒸汽;水气float [flut] vi.漂浮form [f:m] vi.形成dissolve [di'zlv] vt. 溶解；分解；分离balance ['blns] n.天平crucible ['kru:sibl] n. 坩锅tongs [tz] (复）夹子；小钳子flame [fleim] n. 火焰facility [f'siliti] n.（常作复数）设备；工具lecture ['lekt] n. 演讲department [di'pɑ:tmnt] n.（大学的）科、系astonished ['stnit] adj.吃惊的；惊愕的Module 6contain [kn'tein] vt. 包含；包括access ['kses] n.接近；通路crash [kr] vi.(计算机)崩溃keyword ['ki: , w:d] n.密码；口令log [lg] vt.记录；登录software ['sftw] n. 软件breakdown ['breikdaun] n.故障source [s:s] n.来源；出处accessible [k'sesbl] adj.可进入的；可使用的data ['deit] n.（复）数据defence [di'fens] n.保护；防卫create [kri:'eit] vt. 创造；发明network ['netw:k] n. 网络via [vai] prep.途径；经由percentage [p'sentid] n.百分数；百分率design [di'zain] vt. 设计document ['dkjumnt] n. 文件invention [in'venn] n. 发明permission [p'min] n. 许可military ['militri] adj.军事的；军队的concentrate ['knsntreit] vi.集中（注意力、思想等）definite ['definit] adj. 明确的fantastic [fn'tstik] adj.极好的；美妙的independent [,indi'pendnt] adj.独立的essay ['esei] n.文章pass [ps] vt.超过frequently ['fri:kwntli] adv.时常；经常disadvantage [,disd'vɑ:ntid] n.弊端；缺点average ['vrid] adj.平均的statistics [st'tistiks] n.（复）统计数字shorten [':tn] vt.缩短sideways ['saidweiz] adv.横着地；斜着地。

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db_32bit_opsize = is_32;
db_32bit_addrsize = is_32;
instruction_begin = instruction = instr;
seg_override = NULL;
db_rep_prefix = 0;
db_repne_prefix = 0;
sreg_mod10_rm16[6] = "SS";
sreg_mod10_rm16[7] = "DS";
segment_name[0] = "ES";
segment_name[1] = "CS";
segment_name[2] = "SS";
segment_name[3] = "DS";
#include "bochs.h"
bx_disassemble_c bx_disassemble;
bx_disassemble_c::bx_disassemble_c(void)
{
sreg_mod01_rm32[0] = "DS";
sreg_mod01_rm32[1] = "DS";
sreg_mod00_rm16[4] = "DS";
sreg_mod00_rm16[5] = "DS";
sreg_mod00_rm16[6] = "DS";
sreg_mod00_rm16[7] = "DS";
sreg_mod01_rm16[0] = "DS";
sreg_mod01_rm16[1] = "DS";
base_name16[4] = "??";
base_name16[5] = "??";
base_name16[6] = "BP";
base_name16[7] = "BX";
index_name16[0] = "SI4;;
index_name16[2] = "SI";
sreg_mod01_rm16[2] = "SS";
sreg_mod01_rm16[3] = "SS";
sreg_mod01_rm16[4] = "DS";
sreg_mod01_rm16[5] = "DS";
sreg_mod01_rm16[6] = "SS";
sreg_mod01_rm16[7] = "DS";
sreg_mod01_base32[2] = "DS";
sreg_mod01_base32[3] = "DS";
sreg_mod01_base32[4] = "SS";
sreg_mod01_base32[5] = "SS";
sreg_mod01_base32[6] = "DS";
sreg_mod01_base32[7] = "DS";
segment_name[4] = "FS";
segment_name[5] = "GS";
segment_name[6] = "??";
segment_name[7] = "??";
general_8bit_reg_name[0] = "AL";
general_8bit_reg_name[1] = "CL";
// /
//
// This library is free software; you can redistribute it and/or
// modify it under the terms of the GNU Lesser General Public
sreg_mod10_base32[0] = "DS";
sreg_mod10_base32[1] = "DS";
sreg_mod10_base32[2] = "DS";
sreg_mod10_base32[3] = "DS";
sreg_mod10_base32[4] = "SS";
sreg_mod10_base32[5] = "SS";
sreg_mod00_base32[4] = "SS";
sreg_mod00_base32[5] = "DS";
sreg_mod00_base32[6] = "DS";
sreg_mod00_base32[7] = "DS";
sreg_mod01_base32[0] = "DS";
sreg_mod01_base32[1] = "DS";
general_8bit_reg_name[2] = "DL";
general_8bit_reg_name[3] = "BL";
general_8bit_reg_name[4] = "AH";
general_8bit_reg_name[5] = "CH";
general_8bit_reg_name[6] = "DH";
// License as published by the Free Software Foundation; either
// version 2 of the License, or (at your option) any later version.
//
// This library is distributed in the hope that it will be useful,
general_32bit_reg_name[1] = "ECX";
general_32bit_reg_name[2] = "EDX";
general_32bit_reg_name[3] = "EBX";
general_32bit_reg_name[4] = "ESP";
general_32bit_reg_name[5] = "EBP";
general_16bit_reg_name[4] = "SP";
general_16bit_reg_name[5] = "BP";
general_16bit_reg_name[6] = "SI";
general_16bit_reg_name[7] = "DI";
general_32bit_reg_name[0] = "EAX";
sreg_mod01_rm32[2] = "DS";
sreg_mod01_rm32[3] = "DS";
sreg_mod01_rm32[4] = "??";
sreg_mod01_rm32[5] = "SS";
sreg_mod01_rm32[6] = "DS";
sreg_mod01_rm32[7] = "DS";
index_name32[2] = "EDX";
index_name32[3] = "EBX";
index_name32[4] = "???";
index_name32[5] = "EBP";
index_name32[6] = "ESI";
index_name32[7] = "EDI";
// Copyright (C) 2001 MandrakeSoft S.A.
//
// MandrakeSoft S.A.
// 43, rue d'Aboukir
// 75002 Paris - France
// /
index_name16[3] = "DI";
index_name16[4] = "SI";
index_name16[5] = "DI";
index_name16[6] = "??";
index_name16[7] = "??";
index_name32[0] = "EAX";
index_name32[1] = "ECX";
sreg_mod10_rm32[0] = "DS";
sreg_mod10_rm32[1] = "DS";
sreg_mod10_rm32[2] = "DS";
sreg_mod10_rm32[3] = "DS";
sreg_mod10_rm32[4] = "??";
sreg_mod10_rm32[5] = "SS";