IRF840中文资料_数据手册_参数
IRF840B参数
Power MOSFETIRF840, SiHF840Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •Fast Switching •Ease of Paralleling •Simple Drive Requirements •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 14 mH, R G = 25 Ω, I AS = 8.0 A (see fig. 12).c.I SD ≤ 8.0 A, dI/dt ≤ 100 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)500R DS(on) (Ω)V GS = 10 V0.85Q g (Max.) (nC)63Q gs (nC)9.3Q gd (nC)32ConfigurationSingleTO-220GDSORDERING INFORMATIONPackage TO-220Lead (Pb)-free IRF840PbF SiHF840-E3 SnPbIRF840SiHF840ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS500VGate-Source Voltage V GS ± 20 V Continuous Drain Current V GS at 10 VT C = 25 °C I D8.0A T C = 100 °C5.1Pulsed Drain Current a I DM 32Linear Derating Factor1.0W/°C Single Pulse Avalanche Energy b E AS 510mJ Repetitive Avalanche Current a I AR 8.0 A Repetitive Avalanche Energy a E AR 13mJ Maximum Power Dissipation T C = 25 °CP D 125WPeak Diode Recovery dV/dt cdV/dt 3.5V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in 1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may applyIRF840, SiHF840Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSARAMETER SYMBOL TY.MAX.UNITMaximum Junction-to-Ambient R thJA -62°C/W Case-to-Sink, Flat, Greased Surface R thCS 0.50-Maximum Junction-to-Case (Drain)R thJC- 1.0IRF840, SiHF840Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °CFig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. TemperatureIRF840, SiHF840 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating AreaIRF840, SiHF840Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsIRF840, SiHF840Vishay SiliconixFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test CircuitIRF840, SiHF840Vishay Siliconix Array Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?91070.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.。
IRF840A中文资料
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10us
10
TJ = 150 ° C
I D , Drain Current (A)
10 100us
1ms 1 10ms
1
TJ = 25 ° C
0.1 0.2
7/7/99
元器件交易网
IRF840A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Drain-to-Source Breakdown Voltage 500 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 2.0 ––– IDSS Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– IGSS Gate-to-Source Reverse Leakage ––– V(BR)DSS Typ. ––– 0.58 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.85 Ω VGS = 10V, ID = 4.8A 4.0 V VDS = VGS, ID = 250µA 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V
IRF840A说明书
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
510 8.0 13
2
IRF840A
100
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
2.5
10
TJ = 150 ° C
2.0
TJ = 25 ° C
1
1.5
1.0
0.5
0.1 4.0
V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
Typ.
––– 0.50
Max.
1.0 ––– 62
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units IS
I SM
VSD t rr Q rr ton
Conditions D MOSFET symbol ––– ––– 8.0 showing the A G integral reverse ––– ––– 32 S p-n junction diode. ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V ––– 422 633 ns TJ = 25°C, IF = 8.0A ––– 2.0 3.0 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
IRF840LCL中文资料
HEXFET ® Power MOSFETPD- 93766This new series of low charge HEXFET ® power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings.In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs.These device improvements combined with the proven ruggedness and reliability that characterize of HEXFET power MOSFETs offer the designer a new powertransistor standard for switching applications.l Ultra Low Gate Chargel Reduced Gate Drive Requirement l Enhanced 30V V GS Rating l Reduced C ISS , C OSS , C RSSl Extremely High Frequency Operation lRepetitive Avalanche RatedDescription1/3/2000ParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.0R θJAJunction-to-Ambient (PCB Mounted,steady-state)**–––40Thermal Resistance°C/WParameterMax.UnitsI D @ TC = 25°C Continuous Drain Current, V GS @ 10V 8.0I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 5.1A I DMPulsed Drain Current 28P D @T A = 25°C Power Dissipation 3.1W P D @T C = 25°C Power Dissipation125W Linear Derating Factor 1.0W/°C V GS Gate-to-Source Voltage± 30V E AS Single Pulse Avalanche Energy‚ 510mJ I AR Avalanche Current8.0A E AR Repetitive Avalanche Energy 13mJ dv/dt Peak Diode Recovery dv/dt 3.5V/ns T J Operating Junction and-55 to + 150T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case)°CAbsolute Maximum Ratings 1IRF840LCS IRF840LCLD 2Pak IRF840LCS TO-262IRF840LCLIRF840LCS/LCLIRF840LCS/LCLIRF840LCS/LCLIRF840LCS/LCLIRF840LCS/LCLIRF840LCS/LCLIRF840LCS/LCLIRF840LCS/LCLIRF840LCS/LCL。
全系列场效应管参数
K2843 600V 10A 45W N07N03L 30V 80A 150W N10N20 10A 200V N 沟道MOS管10N60 10A 600V11N80 11A 800V 156W11P06 60V 9.4A P沟道直插13N60 13A 600V N 沟道15N03L 30V 42A 83W N2N7000 60V 0.2A 0.35W N2N7000 60V 0.2A 0.35W N40N03H 30V 40A N4232 内含P沟道,N沟道MOS管各一,4532M 内含P沟道,N沟道MOS管各一,50N03L(SD 30V 47A 50W N 沟道小贴片MOS 55N03 25V 55A 103W5N90 5A 900V5P25 250V 5A6030LX 30V 52A 42W N603AL 30V 25A 60W N 沟道小贴片MOS6A60 600V 6A N6N70 700V 6A N6P25 250V 6A70L0270N06 70A 60V 125W7N60 600V 7A N,铁7N70 7A 700V85L028N25 250V ,8A ,同IRF63495N03 25V 75A 125W9916H 18V 35A 58W 小贴片，全新9N60 9A 600V9N70 9A 700VAF4502CS 内含P沟道，N沟道MOS管各一A04403 30V 6.1A 单P沟道8脚贴片A04404 30V 8.5A 单N沟道8脚贴片A04405 30V 6A 3W 单P沟道8脚贴片A04406 30V,11.5A,单N沟道,8脚贴A04407 30V 12A 3W 单P沟道,8脚贴片A04407 30V 12A 3W 单P沟道,8脚贴片A04408 30V 12A 单N沟道,8脚贴片A04409 30V 15A P沟道场效应,8脚A04410 30V 18A 单N沟道8脚贴片A04411 30V 8A 3W P沟道场效应,8脚A04413 30V 15A 3W 单P沟道,8脚贴片A04413 30V 15A 3W 单P沟道,8脚贴片A04414 30V,8.5A,3WM 单N沟道，8脚A04418 30V 11.5A N沟道8脚贴片A04422 30V 11A N 沟道8脚贴片A04423 30V 15A 3.1W 单P沟道,8脚贴A04600 内含P沟道，N沟道MOS管各一A0D405 30V，18A，P高压板MOS管贴A0D408 30V，18A，P高压板MOS管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D420 30V,10A,N高压板MOS管贴A0D442 60V，38/27A，N 高压板MOS管贴A0D442 60V38/27A,N高压板MOS管贴A0D444 60V,12A,N 高压板MOS管贴A0P600 内含P,N沟道各1,30V 7.5AA0P605 内含P,N沟道各1,30V 7.5AA0P607 内含P、N沟道各1，60V 4。
irf840场效应管参数
irf840场效应管参数
irf840场效应管是一种N型场效应管，它的特性参数如下：
1.最大电压：VDSS=200V，即场效应管的最大漏源极电压为200V；
2.最大电流：ID=8A，即场效应管的最大漏源极电流为8A；
3.最小漏源极间电阻：RDS(on)=0.0085Ω，即场效应管的最小漏源极间电阻为0.0085Ω；
4.最大功耗：PD=25W，即场效应管的最大功耗为25W；
5.最大漏源极电容：Ciss=1000pF，即场效应管的最大漏源极电容为1000pF；
6.最大漏极极电容：Coss=50pF，即场效应管的最大漏极极电容为50pF；
7.最大漏极极电容：Crss=10pF，即场效应管的最大漏极极电容为10pF；
8.最大增益带宽：ft=100MHz，即场效应管的最大增益带宽为100MHz；
9.最大增益：hFE=50，即场效应管的最大增益为50。
irf840场效应管的特性参数可以满足大多数电子设备的要求，因此在电子设备中应用比较广泛。
它的最大电压、最大电流、最小漏源极间电阻、最大功耗、最大漏源极电容、最大漏极极电容、最大增益带宽和最大增益等参数都是比较重要的，可以根据不同的应用场合来选择合适的参数。
彩色显示器电源调整管主要参数与代换
P6N60FI 800V/3.9A/45W 2SK428,2SK1507,IRF832
SSH6N80 800V/6A/120W MTM6N90,MTM8N90
STP7NA60 600V/7.2A/125W 2SK554,IRF840,IRF841
2SC3460 1100V/6A/100W 2SC3461,2SC3463,2SD1432 2SK2039 900V/5A/150W 2SK793,2SK794,2SK833
2SC3461 1100V/8A/120W 2SC3464,2SC3465,2SD1433 2SK2139 900V/10A/150W 2SK787,2SK1512,2SK1796
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07N03L 30V 80A 150W N
10N20 10A 200V N 沟道MOS管
10N60 10A 600V
11N80 11A 800V 156W
A0D442 60V，38/27A，N 高压板MOS管贴
A0D442 60V38/27A,N高压板MOS管贴
A0D444 60V,12A,N 高压板MOS管贴
A0P600 内含P,N沟道各1,30V 7.5A
A0P605 内含P,N沟道各1,30V 7.5A
A0P607 内含P、N沟道各1，60V 4。7A
K1507: 9A 600V
2SK1537 N-FET 900V 5A 100W
K2045 600V, 6A , 35W 。代K1404, K2101, 2SK2118。
K1118,K2645,K2564,K2545,K1507,K2761,K1117,K2333代k2141
IRF840AL规格书
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 8.0 showing the A G integral reverse ––– ––– 32 S p-n junction diode. ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V ––– 422 633 ns TJ = 25°C, IF = 8.0A ––– 2.0 3.0 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF840AS/L
100000
20
VGS , Gate-to-Source Voltage (V)
Min. 500 ––– ––– 2.0 ––– ––– ––– ––– Min. 3.7 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.58 ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 11 23 26 19 1018 155 8.0 1490 42 56
Max.
8.0 5.1 32 125 3.1 1.0 ± 30 5.0 -55 to + 150 300 (1.6mm from case )
常用三极管参数
IRFU02050V15A42W**NMOS场效应IRFPG421000V4A150W**NMOS场效应IRFPF40900V 4.7A150W**NMOS场效应IRFP9240200V12A150W**PMOS场效应IRFP9140100V19A150W**PMOS场效应IRFP460500V20A250W**NMOS场效应IRFP450500V14A180W**NMOS场效应IRFP440500V8A150W**NMOS场效应IRFP353350V14A180W**NMOS场效应IRFP350400V16A180W**NMOS场效应IRFP340400V10A150W**NMOS场效应IRFP250200V33A180W**NMOS场效应IRFP240200V19A150W**NMOS场效应IRFP150100V40A180W**NMOS场效应IRFP140100V30A150W**NMOS场效应IRFP05460V65A180W**NMOS场效应IRFI744400V4A32W**NMOS场效应IRFI730400V4A32W**NMOS场效应IRFD9120100V1A1W**NMOS场效应IRFD12380V 1.1A1W**NMOS场效应IRFD120100V 1.3A1W**NMOS场效应IRFD11360V0.8A1W**NMOS场效应IRFBE30800V 2.8A75W**NMOS场效应IRFBC40600V 6.2A125W**NMOS场效应IRFBC30600V 3.6A74W**NMOS场效应IRFBC20600V 2.5A50W**NMOS场效应IRFS9630200V 6.5A75W**PMOS场效应IRF9630200V 6.5A75W**PMOS场效应IRF9610200V1A20W**PMOS场效应IRF954160V19A125W**PMOS场效应IRF953160V12A75W**PMOS场效应IRF9530100V12A75W**PMOS场效应IRF840500V8A125W**NMOS场效应IRF830500V 4.5A75W**NMOS场效应IRF740400V10A125W**NMOS场效应IRF730400V 5.5A75W**NMOS场效应IRF720400V 3.3A50W**NMOS场效应IRF640200V18A125W**NMOS场效应IRF630200V9A75W**NMOS场效应IRF610200V 3.3A43W**NMOS场效应IRF54180V28A150W**NMOS场效应IRF540100V28A150W**NMOS场效应IRF530100V14A79W**NMOS场效应IRF440500V8A125W**NMOS场效应IRF230200V9A79W**NMOS场效应IRF130100V14A79W**NMOS场效应BUZ20100V12A75W**NMOS场效应BUZ11A50V25A75W**NMOS场效应BS17060V0.3A0.63W**NMOS场效应2SC4582600V15A75W**NPN2SC4517550V3A30W**NPN2SC44291100V8A60W**NPN2SC4297500V12A75W**NPN2SC42881400V12A200W**NPN2SC4242450V7A40W**NPN2SC4231800V2A30W**NPN2SC41191500V15A250W**NPN2SC41111500V10A250W**NPN2SC4106500V7A50W*20MHZ NPN2SC4059600V15A130W**NPN2SC403850V0.1A0.3W*180MHZ NPN2SC4024100V10A35W**NPN2SC39981500V25A250W**NPN2SC39971500V15A250W**NPN2SC398750V3A20W1000*NPN(达林顿) 2SC3953120V0.2A 1.3W*400MHZ NPN2SC3907180V12A130W*30MHZ NPN2SC38931400V8A50W*8MHZ NPN2SC38861400V8A50W*8MHZ NPN2SC3873500V12A75W*30MHZ NPN2SC3866900V3A40W**NPN2SC3858200V17A200W*20MHZ NPN2SC380730V2A 1.2W*260MHZ NPN2SC3783900V5A100W**NPN2SC37201200V10A200W**NPN2SC3680900V7A120W**NPN2SC3679900V5A100W**NPN2SC359530V0.5A 1.2W90*NPN2SC3527500V15A100W13*NPN2SC3505900V6A80W12*NPN2SC34601100V6A100W12*NPN2SC34571100V3A50W12*NPN2SC335820V0.15A**7000MHZ NPN2SC335520V0.15A**6500MHZ NPN2SC3320500V15A80W**NPN2SC3310500V5A40W20*NPN2SC3300100V15A100W**NPN2SC185520V0.02A0.25W*550MHZ NPN2SC1507300V0.2A15W**NPN2SC149436V6A40W*175MHZ NPN2SC122260V0.1A0.25W*100MHZ NPN2SC116235V 1.5A10W**NPN2SC100880V0.7A0.8W*50MHZ NPN2SC90030V0.03A0.25W*100MHZ NPN2SC82845V0.05A0.25W**NPN2SC81560V0.2A0.25W**NPN2SC38035V0.03A0.25W**NPN2SC10660V 1.5A15W**NPN2SB1494120V25A120W**PNP(达林顿）2SB1429180V15A150W**PNP2SB1400120V6A25W1000-20000*PNP(达林顿）2SB137560V3A2W**PNP2SB133580V4A30W**PNP2SB1317180V15A150W**PNP2SB1316100V2A10W15000*PNP(达林顿）2SB124340V3A1W*70MHZ PNP2SB124040V2A1W*100MHZ PNP2SB123880V0.7A1W*100MHZ PNP2SB118560V3A25W*75MHZ PNP2SB1079100V20A100W5000*PNP(达林顿）2SB1020100V7A40W6000*PNP(达林顿）2SB83460V3A30W**PNP2SB817160V12A100W**PNP2SB77240V3A10W**PNP2SB74470V3A10W**PNP2SB73460V1A1W**PNP2SB688120V8A80W**PNP2SB67560V7A40W**PNP(达林顿）2SB66970V4A40W**PNP(达林顿）2SB649180V 1.5A1W**PNP2SB647120V1A0.9W*140MHZ PNP2SB44950V 3.5A22W**PNP2SA1943230V15A150W**PNP2SA1785400V1A1W*140MHZ PNP2SA1668200V2A25W*20MHZ PNP2SA1516180V12A130W*25MHZ PNP2SA1494200V17A200W*20MHZ PNP2SA1444100V 1.5A2W*80MHZ PNP2SA1358120V1A10W*120MHZ PNP2SA1302200V15A150W**PNP2SA1301200V10A100W**PNP2SA1295230V17A200W**PNP2SA1265140V10A30W**PNP2SA1216180V17A200W**PNP2SA116250V0.15A0.15W**PNP2SA1123150V0.05A0.75W**PNP2SA102050V2A0.9W**PNP2SA1009350V2A15W**PNP2N6678650V15A175W**NPN2N568560V50A300W**NPN2N6277180V50A300W**NPN2N5551160V0.6A0.6W*100MHZ NPN2N5401160V0.6A0.6W*100MHZ PNP2N3773160V16A150W**NPN2N3440450V1A1W**NPN2N3055100V15A115W**NPN2N290760V0.6A0.4W200*NPN2N236940V0.5A0.3W*800MHZ NPN2N222260V0.8A0.5W45*NPN 901830V0.05A0.4W*1G NPN901550V0.1A0.4W*150MHZ PNP 901450V0.1A0.4W*150MHZ NPN 901350V0.5A0.6W**NPN 901250V0.5A0.6W**PNP 901150V0.03A0.4W*150MHZ NPNTIP147100V10A125W**PNPTIP142100V10A125W**NPNTIP127100V8A65W**PNPTIP122100V8A65W**NPNTIP102100V8A2W**NPNTIP42C100V6A65W**PNPTIP41C100V6A65W**NPNTIP36C100V25A125W**PNPTIP35C100V25A125W**NPNTIP32C100V3A40W**PNPTIP31C100V3A40W**NPN MJE130071500V 2.5A60W**NPN MJE13005400V4A60W**NPN MJE13003400V 1.5A14W**NPN MJE2955T60V10A75W**NPN MJE350300V0.5A20W**NPN MJE340300V0.5A20W**NPNMJ15025400V16A250W**PNPMJ15024400V16A250W**NPNMJ13333400V20A175W**NPNMJ11033120V50A300W**NPNMJ11032120V50A300W**NPNMJ10025850V20A250W**NPNMJ10016500V50A200W**NPN BUS13A1000V15A175W**NPN BUH5151500V10A80W**NPNBU25321500V15A150W**NPNBU25271500V15A150W**NPNBU25251500V12A150W**NPNBU25221500V11A150W**NPNBU2520800V10A150W**NPNBU2508700V8A125W**NPNBU25061500V7A50W**NPNBU932R500V15A150W**NPNBU806400V8A60W**NPNBU406400V7A60W**NPNBU323450V10A125W**NPN(达林顿) BF458250V0.1A10W**NPNBD682100V4A40W**PNPMJ10015400V50A200W**NPNMJ10012400V10A175W**NPN(达林顿) MJ450290V30A200W**PNPMJ305560V15A115W**NPNMJ295560V15A115W**PNPMN6501500V6A80W**NPNBUX98A400V30A210W**NPN BUX84800V2A40W**NPN BUW13A1000V15A150W**NPN BUV48A450V15A150W**NPN BUV28A225V10A65W**NPN BUV2690V14A65W**NPN BUT12A450V10A125W**NPN BUT11A1000V5A100W**NPN BUS14A1000V30A250W**NPNBD681100V4A40W**NPNBD24445V6A65W**PNPBD24345V6A65W**NPNBD238100V2A25W**PNPBD237100V2A25W**NPNBD13860V 1.5A12.5W**PNPBD13760V 1.5A12.5W**NPNBD13645V 1.5A12.5W**PNPBD13545V 1.5A12.5W**NPNBC54750V0.2A0.5W*300MHZ NPNBC54680V0.2A0.5W**NPNBC33850V0.8A0.6W**NPNBC33750V0.8A0.6W**NPNBC32750V0.80.6W**PNPBC30750V0.2AA0.3W**PNP2SDK55400V4A60W**NPN2SD24451500V12.5A120W**NPN2SD238890V3A 1.2W**NPN(达林顿) 2SD23351500V7A100W**NPN2SD23341500V5A80W**NPN2SD2156120V25A125W2000-20000*NPN(达林顿) 2SD2155180V15A150W**NPN2SD203660V1A 1.2W**NPN2SD201260V3A2W**NPN2SD200880V1A 1.5W**NPN2SD199740V3A 1.5W*100MHZ NPN2SD199460V1A1W**NPN2SD199350V0.1A0.4W**NPN2SD1980100V2A10W1000-10000*NPN(达林顿) 2SD1978120V 1.5A1W30000*NPN(达林顿) 2SD1975180V15A150W**NPN2SD1930100V2A 1.2W1000*NPN(达林顿) 2SD184750V1A1W**NPN(低噪) 2SD176260V3A25W*90MHZ NPN2SD1718180V15A 3.2W*20MHZ NPN2SD1640120V2A 1.2W4000-40000*NPN(达林顿) 2SD1590150V8A25W15000*NPN(达林顿) 2SD1559100V20A20W5000*NPN(达林顿) 2SD141580V7A40W6000*NPN(达林顿) 2SD141680V7A40W6000*NPN(达林顿) 2SD130225V0.5A0.5W*200MHZ NPN2SD127380V3A40W*50MHZ NPN2SD1163A350V7A40W*60MHZ NPN2SD1047160V12A100W**NPN2SD1037150V30A180W**NPN2SD1025200V8A50W**NPN(达林顿) 2SD789100V1A0.9W**NPN2SD774100V1A1W**NPN2SD669180V 1.5A1W*140MHZ NPN2SD667120V1A0.9W*140MHZ NPN( 达林顿 ) 2SD560150V5A30W**NPN( 达林顿 ) 2SD547600V50A400W**NPN2SD438500V1A0.75W*100MHZ NPN2SD415120V0.8A5W**NPN2SD385100V7A30W**NPN( 达林顿 ) 2SD32550V3A25W**NPN2SD40C40V0.5A40W**NPN( 达林顿 ) 2SC52521500V15A100W**NPN2SC52511500V12A50W**NPN2SC52501000V7A100W**NPN2SC52441500V15A200W**NPN2SC52431500V15A200W**NPN2SC52071500V10A50W**NPN2sc5200230V15A150W**NPN2sc51321500V16A50W**NPN2sc50881500V10A50W**NPN2sc50861500V10A50W**NPN2sc50681500V10A50W**NPN2sc50201000V7A100W**NPN2sc4953500V2A25W**NPN2sc49411500V6A65W**NPN2sc49271500V8A50W**NPN2sc4924800V10A70W**NPN2sc49132000V0.2A35W**NPN2sc47691500V7A60W**NPN( 带阻尼 ) 2sc47471500V10A50W**NPN2sc47451500V6A50W**NPN2sc47421500V6A50W**NPN( 带阻尼 ) 2sc4706900V14A130W*6MH NPN2SD18871500V10A70W**NPN2SD18861500V8A70W**NPN2SD18851500V6A60W**NPN2SD18841500V5A60W**NPN2SD18831500V4A50W**NPN2SD18821500V3A50W**NPN2SD18811500V10A70W**NPN2SD18801500V8A70W**NPN2SD18791500V6A60W**NPN2SD18781500V5A60W**NPN2SD18761500V3A50W**NPN2SD17391500V6A100W**NPN2SD17381500V5A100W**NPN 2SD17371500V 3.5A60W**NPN 2SD17321500V7A120W**NPN 2SD17311500V6A100W**NPN 2SD17301500V5A100W**NPN 2SD17291500V 3.5A60W**NPN 2SD17111500V7A100W**NPN 2SD17101500V6A100W**NPN 2SD16561500V6A60W**NPN 2SD16551500V5A60W**NPN 2SD16541500V 3.5A50W**NPN 2SD16531500V 2.5A50W**NPN 2SD16521500V6A60W**NPN 2SD16511500V5A60W**NPN 2SD16501500V 3.5A50W**NPN 2SD16351500V5A100W**NPN 2SD16321500V4A70W**NPN 2SD15771500V5A80W**NPN 2SD15541500V 3.5A40W**NPN 2SD15481500V10A50W**NPN 2SD15471500V7A50W**NPN 2SD15461500V6A50W**NPN 2SD15451500V5A50W**NPN 2SD14561500V6A50W**NPN 2SD14551500V5A50W**NPN 2SD14541700V4A50W**NPN 2SD14341700V5A80W**NPN 2SD14311500V5A80W**NPN 2SD14261500V 3.5A80W**NPN 2SD14021500V5A120W**NPN 2SD13991500V6A60W**NPN 2SD13441500V6A50W**NPN 2SD13431500V6A50W**NPN 2SD13421500V5A50W**NPN 2SD19411500V6A50W**NPN 2SD19111500V5A50W**NPN 2SD13411500V5A50W**NPN 2SD12191500V3A65W**NPN 2SD12901500V3A50W**NPN 2SD11751500V5A100W**NPN 2SD11741500V5A85W**NPN 2SD11731500V5A70W**NPN 2SD11721500V5A65W**NPN 2SD11431500V5A65W**NPN 2SD11421500V 3.5A50W**NPN 2SD10161500V7A50W**NPN 2SD9952500V3A50W**NPN 2SD9941500V8A50W**NPN 2SD957A1500V6A50W**NPN 2SD9541500V5A95W**NPN2SD9521500V3A70W**NPN 2SD9041500V7A60W**NPN 2SD9031500V7A50W**NPN 2SD8711500V6A50W**NPN 2SD8701500V5A50W**NPN 2SD8691500V 3.5A50W**NPN 2SD8382500V3A50W**NPN 2SD8221500V7A50W**NPN 2SD8211500V6A50W**NPN 2SD3481500V7A50W**NPN 2SC4303A1500V6A80W**NPN 2SC42921500V6A100W**NPN 2SC42911500V5A100W**NPN 2SC4199A1500V10A100W**NPN 2SC38831500V5A50W**NPN 2SC37291500V5A50W**NPN 2SC36881500V10A150W**NPN 2SC36871500V8A150W**NPN 2SC36861500V7A120W**NPN 2SC36851500V6A120W**NPN 2SC34861500V6A120W**NPN 2SC34851500V5A120W**NPN 2SC34841500V 3.5A80W**NPN 2SC34821500V6A120W**NPN 2SC34811500V5A120W**NPN 2SC34801500V 3.5A80W**NPN 2SC21252200V5A50W**NPN 2SC20271500V5A50W**NPN BUY712200V2A40W**NPN BU508A1500V7.5A75W**NPN BU5001500V6A75W**NPN BU3081500V5A12.5W**NPN BU209A1700V5A12.5W**NPN BU208D1500V5A12.5W**NPN BU208A1500V5A12.5W**NPN BU1081500V5A12.5W**NPN 2SD158560V3A15W**NPN 2SD77320V2A1W**NPN 2SC278560V0.1A0.3W**NPN 2SC40350V0.1A0.1W**NPN 2SD124630V2A0.75W**NPN 2SC2570A25V0.07A0.6W**NPN 2SC104730V0.015A0.15W**NPN 2SC311460V0.15A0.2W**NPN 2SD40025V1A0.75W**NPN 2SC192340V0.02A0.1W**NPN 2SC2621300V0.2A10W**NPN 2SC2568300V0.2A10W**NPN 2SC221650V0.05A0.3W**NPN 2SC167430V0.02A0.1W**NPN2SC536F40V0.1A0.25W**NPN 2SA608F30V0.1A0.25W**PNP 2SD1271A130V7A40W**NPN 2SD113370V4A40W**NPN 2SC1890A120V0.05A0.3W**NPN 2SC136050V0.05A0.5W**NPN 2SA1304150V 1.5A25W**PNP 2SD1274A150V5A40W**NPN 2SC2371300V0.1A10W**NPN 2SA966Y30V 1.5A0.9W**PNP 2SD137880V0.7A10W**NPN 2SD553Y70V7A40W**NPN RN120450V0.1A0.3W**NPN 2SD1405Y50V3A30W**NPN 2SC287850V0.3A0.4W**NPN 2SC195930V0.4A0.5W**NPN 2SC1569300V0.15A 1.5W**NPN 2SC2383Y160V1A0.9W**NPN 2SA129950V0.5A0.3W**PNP 2SB564A45V0.050.25W**PNP 2SD1877800V4A50W**NPN BU508A1500V8A125W**NPN BUT111500V5A80W**NPN 2SD3505900V6A50W**NPN 2SD9061400V8A50W**NPN 2SD9051400V8A50W**NPN 2SC19421500V3A100W**NPN 2SD13971500V 3.5A50W**NPN 2SD13961500V 2.5A50W**NPN 2SC3153900V6A100W**NPN 2SD14031500V6A50W**NPN 2SD14101500V 3.5A80W**NPN 2SD20571500V5A100W**NPN 2SD20271500V5A50W**NPN 2SD9531500V7A95W**NPN 2SD9511500V3A65W**NPN 2SD9501500V 3.5A80W**NPN 2SD8521500V5A70W**NPN 2SD8501500V3A25W**NPN 2SD900B1500V5A50W**NPN 2SD899A1500V4A50W**NPN 2SD898B1500V3A50W**NPN 2SD8711500V6A50W**NPN 2SD8701500V5A50W**NPN 2SD8691500V 3.5A50W**NPN 2SD14331500V7A80W**NPN 2SD14321500V6A80W**NPN 2SD14311500V5A80W**NPN 2SD8201500V5A50W**NPN 2SD8191500V 3.5A50W**NPN2SD14971500V6A50W**NPN 2SD13981500V5A50W**NPN 2SD14271500V5A80W**NPN 2SD14281500V6A80W**NPN 2SD14261500V 3.5A80W**NPN 2SC206870V0.2A0.62W**NPN 2SC1627Y80V0.3A0.6W**NPN 2SC495Y70V0.8A5W**NPN 2SC388A20V0.02A0.2W**NPN 2SB686100V6A60W**PNP 2SA940150V 1.5A 1.5W**PNP 2SC2120Y30V0.8A0.6W**NPN 2SD15551500V5A50W**NPN 2SD880660V3A30W**NPN 2SC2456300V0.1A10W**NPN 2SA130020V2A0.7W**PNP 2SC304CD60V0.5A0.8W**NPN 2SC2238160V 1.5A25W**NPN 2SC332880V2A0.9W**NPN 2SC2190450V5A100W**NPN 2SA968Y160V 1.5A25W**PNP 2SC340250V0.1A0.3W**NPN 2SC2168200V2A30W**NPN 2SC3198G60V0.15A0.4W**NPN 2SC2655Y60V2A0.9W**NPN 2SC182780V4A30W**NPN 2SA1266Y50V0.15A0.4W**PNP 2SD88060V3A30W**NPN 2SC190630V0.05A0.3W**NPN 2SC94550V0.1A0.25W**NPN 2SC327930V2A0.75W**NPN 2SC2229200V0.05A0.8W**NPN 2SC223630V 1.5A0.9W**NPN 2SC38320V0.05A0.2W**NPN 2SA950Y150V0.8A0.6W**PNP BC548B30V0.2A0.5W**NPN 2SC339950V0.1A0.3W**NPN 2SD14551500V5A50W**NPN 2SC1983R80V3A30W**NPN 2SC227300V0.1A0.75W**NPN 2SC1213D50V0.5A0.4W**NPN 2SA778AK180V0.05A0.2W**PNP DTC114ES50V0.1A0.25W**NPN 2SC3413C40V0.1A0.5W**NPN 2SC2611300V0.1A 1.25W**NPN 2SC1514300V0.1A 1.25W**NPN DTC124ES50V0.1A0.25W**PNP 2SD107850V2A20W**NPN 2SA139035V0.5A0.3W**PNP 2SD78820V2A0.9W**NPN2SD88240V3A10W**NPN2SD78720V2A0.9W**NPN2SD401AK200V2A25W**NPN2SC2610300V0.1A0.8W**NPN2SC2271N300V0.1A0.75W**NPN2SC174050V0.3A0.3W**NPN2SC1214C50V0.5A0.6W**NPN2SC458D30V0.1A0.2W**NPN2SA67350V0.5A0.4W**PNP2SD15561500V6A50W**NPN2SD1499100V5A40W**NPN2SD1264A200V2A30W**NPN2SD101050V0.05A0.3W**NPN2SD96660V5A1W**NPN2SD601AR60V0.1A0.2W**NPN2SC3265Y30V0.8A0.2W**NPN2SC3063300V0.1A 1.2W**NPN2SC259440V5A10W**NPN2SC1317-R30V0.5A0.4W**NPN2SB1013A30V0.5A0.3W**PNP2SD122660V3A35W**NPN2SC2636Y30V0.05A0.4W**NPN2SB940200V2A30W**PNP2SA720-Q50V0.5A0.4W**PNP2SD13911500V5A80W**NPN2SC218845V0.05A0.6W**NPN2SK301-R*0.14A0.25W**N沟场效应管2SD126660V3A35W**NPN2SD11751500V5A100W**NPN2SD97330V1A1W**NPN2SC2923300V0.2A15W**NPN2SC2653H250V0.2A15W**NPN2SC2377C30V0.15A0.2W**NPN2SC1685Q30V0.1A0.25W**NPN2SC1573A250V0.07A0.6W**NPN2SB642-R60V0.2A0.4W**PNP2SA1309A25V0.1A0.3W**PNP2SA1018150V0.07A0.75W**PNP2SA564A25V0.1A0.25W**PNP2SK301-Q*0.14A0.25W**N沟场效应管2SD15411500V3A50W**NPN2SC168530V0.1A0.25W**NPN2SC1573A250V0.07A0.6W**NPN2SA1309A25V0.1A0.3W**PNPUN421350V0.1A0.25W**NPNUN421150V0.1A0.25W**NPNUN421250V0.1A0.25W**NPNUN411150V0.1A0.25W**PNP2SD15411500V3A50W**NPN2SD96540V5A0.75W**NPN2SC283930V0.1A0.1W**NPN 2SC2258250V0.1A1W**NPN 2SC184645V1A 1.2W**NPN 2SC1573A250V0.07A0.6W**NPN 2SA1309A25V0.1A0.3W**PNP 2SD15441500V 3.5A40W**NPN 2SD802900V6A50W**NPN 2SC271735V0.8A7.5W**NPN 2SC2482150V0.1A0.9W**NPN 2SC2073150V 1.5A25W**NPN 2SC1815Y60V0.15A0.4W**NPN 2SB774T30V0.01A0.25W**PNP 2SA1015R50V0.15A0.4W**PNP 2SA90490V0.05A0.2W**PNP 2SA562T30V0.4A0.3W**PNP。
IRFS840A中文资料
Value Units A V mJ A mJ V/ns W W/A V TO-220F1.Gate2. Drain3. Source321oC5004.62.9326474.64.43.5440.3530TRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.UHC™VCX™。
irf840工作原理
irf840工作原理
IRF840是一种功率MOSFET晶体管，其工作原理是基于功率MOSFET的原理。
MOSFET（金属-氧化物-半导体场效应晶体管）是一种基于场效应原理的三极管。
在MOSFET中，有三个电极：栅极（G），漏极（D）和源极（S）。
源极和漏极之间的电流由栅极-源极电压（VGS）控制。
当栅极-源极电压大于MOSFET 的阈值电压时，MOSFET通导，形成一个导通的通道，电流从漏极流过。
当栅极-源极电压小于阈值电压时，MOSFET处于截止状态，没有电流通过。
IRF840是一种N沟道MOSFET，意味着通道中的载流子是n 型电子。
它具有较低的导通电阻和较高的功率处理能力。
IRF840的工作电压范围很广，通常在10V到500V之间。
它的漏极电流（ID）和漏极-源极电压（VDS）之间的关系是线性关系。
IRF840晶体管主要用于功率放大器、开关电源、变频器等高电压、高功率应用。
IRF840资料
1/8May 2002IRF840N-CHANNEL 500V - 0.75Ω - 8A TO-220PowerMesh™II MOSFETs TYPICAL R DS (on) = 0.75 Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTEDs NEW HIGH VOLTAGE BENCHMARK sGATE CHARGE MINIMIZEDDESCRIPTIONThe PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge for what concerns switching speed, gate charge and ruggedness.APPLICATIONSs HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVESABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating areaTYPE V DSS R DS(on)I D IRF840500 V< 0.85 Ω8 ASymbol ParameterValue UnitV DS Drain-source Voltage (V GS = 0)500V V DGR Drain-gate Voltage (R GS = 20 k Ω)500V V GS Gate- source Voltage± 20V I D Drain Current (continuos) at T C = 25°C 8A I D Drain Current (continuos) at T C = 100°C 5.1A I DM (l )Drain Current (pulsed)32A P TOTTotal Dissipation at T C = 25°C 125W Derating Factor1.0W/°C dv/dt (1)Peak Diode Recovery voltage slope 3.5V/ns T stg Storage Temperature–65 to 150°C T jMax. Operating Junction Temperature150°CSD DD (BR)DSS j JMAX.IRF8402/8THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMICRthj-case Thermal Resistance Junction-case Max 1°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)8A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)520mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0500V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating1µA V DS = Max Rating, T C = 125 °C 50µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 20V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 3.5 A0.750.85ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS > I D(on) x R DS(on)max, I D =3.5A6.4S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 0832pF C oss Output Capacitance 131pF C rssReverse Transfer Capacitance17pF3/8IRF840ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise Time V DD = 250 V, I D = 3.5 A R G =4.7Ω V GS = 10 V (see test circuit, Figure 3)1021ns ns Q g Total Gate Charge V DD = 400V, I D = 7 A,V GS = 10V29.639nC Q gs Gate-Source Charge 4.9nC Q gdGate-Drain Charge13.9nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t r(Voff)Off-voltage Rise TimeV DD = 400V, I D = 7 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 5)9ns t f Fall Time 9ns t cCross-over Time19nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 8A I SDM (2)Source-drain Current (pulsed)32A V SD (1)Forward On Voltage I SD = 8 A, V GS = 0 1.6V t rr Reverse Recovery Time I SD = 7 A, di/dt = 100A/µs V DD = 100V, T j = 150°C (see test circuit, Figure 5)384ns Q rr Reverse Recovery Charge 2.2µC I RRMReverse Recovery Current11.8ASafe Operating Area Thermal ImpedenceIRF8404/8IRF8405/8IRF8406/8Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadIRF8407/8IRF8408/8Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.© 。
IRF840B_NL中文资料
--
--
8.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
32
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.0 A
--
--
1.4
V
trr
Reverse Recovery Time
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
元器件交易网
IRF840B/IRFS840B
Typical Characteristics
ID, Drain Current [A]
Drain-SouRrDcS(eON)O[n-ΩR],esistance
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10 100 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) Gate Threshold Voltage
3.0
2.5 VGS = 10V
2.0 VGS = 20V
1.5
1.0
※ Note : TJ = 25℃
0.5
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
常用IR场管参数
页码，3/6
TO-204AA TO-204AA TO-3 TO-3 TO-3 TO-3 TO-204AE TO-204AE TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
中国宁波维修网--常用场效应管参数表
页码，1/6
常用场效应管参数表
型号 IRF48 厂家 IR 用途 构造 沟道 方式 N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N v111 (V) 60 60 60 60 60 60 60 100 60 100 60 100 60 100 60 100 60 100 60 100 60 100 60 200 150 200 150 250 250 200 150 200 150 250 250 200 区分 ixing (A) 50 17 30 25 30 30 30 8.0 8.0 7.0 7.0 14 14 12 12 27 27 24 24 40 40 33 33 5.0 5.0 4.0 4.0 3.8 3.3 9.0 9.0 8.0 8.0 8.1 6.5 18 pdpch (W) 190 60 90 90 150 150 180 40 40 40 40 75 75 75 75 125 125 125 125 150 150 150 150 40 40 4.0 40 40 40 75 75 75 75 75 75 125 waixing TO-220AB TO-204AA TO-204AE TO-204AE TO-204AE TO-204AE TO-204AA TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-3 TO-3 TO-3 TO-3 TO-204AA TO-204AA TO-3 TO-3 TO-3 TO-3 TO-204AA TO-204AA TO-204AE 2003-03-06
IRF系列场效应管参数
TO-3 TO-3 TO-204AA TO-204AA TO-3 TO-3 TO-3 TO-3 TO-204AA TO-204AA TO-204AE TO-204AE TO-204AE TO-204AE TO-204AA TO-204AA TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-3 TO-3 TO-3 TO-3 TO-3 TO-3
4 4 3.8 3.3 9 9 8 8 8.1 6.5 18 18 16 16 14 13 2.0 2.0 1.7 1.7 3.3 3.3 2.8 2.8 5.5 5.5 4.5 4.5
40 40 40 40 75 75 75 75 75 75 125 125 125 125 125 125 36 36 36 36 50 50 50 50 74 74 74 74
12 12 21 19 5.6 5.6 4.9 4.9 9.2 9.2 8 8 14 14 12 12 28 28 25 25 3.3 3.3 2.6 2.6 2.0 1.6 5 5
150 150 300 300 43 43 43 43 60 60 60 60 79 79 79 79 150 150 150 150 43 43 43 43 20 20 40 40
IRF 系列场效应管参数明细
型号 IRF48 IRF024 IRF034 IRF035 IRF044 IRF045 IRF054 IRF120 IRF121 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 厂家 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR 用途 构造 沟道 方式 N N N N N N N N N N N N N N N N N N N N N N N N N v111(V) 60 60 60 60 60 60 60 100 60 100 60 100 60 100 60 100 60 100 60 100 60 100 60 200 150 区分 ixing(A) 50 17 30 25 30 30 30 8.0 8.0 7.0 7.0 14 14 12 12 27 27 24 24 40 40 33 33 5.0 5.0 pdpch(W) waixing 190 60 90 90 150 150 180 40 40 40 40 75 75 75 75 125 125 125 125 150 150 150 150 40 40 TO-220AB TO-204AA TO-204AE TO-204AE TO-204AE TO-204AE TO-204AA TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-3 TO-3
常用场效应管及晶体管参数
TIP147 TIP142 TIP127 TIP122 TIP102 TIP42C TIP41C TIP36C TIP35C TIP32C TIP31C MJE13007 MJE13005 MJE13003 MJE2955T MJE350 MJE340 MJ15025 MJ15024 MJ13333 MJ11033 MJ11032 MJ10025 MJ10016 BUS13A BUH515 BU2532 BU2527 BU2525 BU2522 BU2520 BU2508 BU2506 BU932R BU806 BU406 BU323 BF458 BD682 MJ10015 MJ10012 MJ4502 MJ3055 MJ2955 MN650 BUX98A BUX84 BUW13A BUV48A BUV28A BUV26 BUT12A BUT11A BUS14A
3A 4A 15A 2A 3A 2A 0.7A 3A 20A 7A 3A 12A 3A 3A 1A 8A 7A 4A 1.5A 1A 3.5A 15A 1A 2A 12A 17A 1.5A 1A 15A 10A 17A 10A 17A 0.15A 0.05A 2A 2A 15A 50A 50A 0.6A 0.6A 16A 1A 15A 0.6A 0.5A 0.8A 0.05A 0.1A 0.1A 0.5A 0.5A 0.03A
PNP PNP PNP PNP(达林顿） PNP PNP PNP PNP PNP(达林顿） PNP(达林顿） PNP PNP PNP PNP PNP PNP PNP(达林顿） PNP(达林顿） PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN PNP NPN NPN NPN NPN NPN NPN NPN PNP NPN NPN PNP NPN
IRF840中文特性
１）V DS :最大工作电压５００v
.２）V DG(20KΩ)耐压５００Ｖ。
３）Ｖ GS 栅源电压正负２０Ｖ
４）ＩＤ２５度时８Ａ,１ＯＯ度时５．１Ａ
５）ＩＤＭ最大工作电流３２Ａ
６）Ｐtot 温度２５度时峰值功率１２５Ｗ
７）Ｄv/Ｄt 二极管恢复电压峰值斜率3.5v/ns
８）工作温度范围－６５－－－－１５０度
要使增强型N沟道MOSFET工作，要在G、S之间加正电压VGS及在D、S之间加正电压VDS，则产生正向工作电流ID。
改变VGS的电压可控制工作电流ID
MOSFET全称功率场效应晶体管。
它的三个极分别是源极(S)、漏极(D)和栅极(G)。
主要优点：热稳定性好、安全工作区大。
缺点：击穿电压低，工作电流小。
IGBT全称绝缘栅双极晶体管，是MOSFET和GTR(功率晶管)相结合的产物。
它的三个极分别是集电极(C)、发射极(E)和栅极(G)。
特点：击穿电压可达1200V，集电极最大饱和电流已超过1500A。
由IGBT作为逆变器件的变频器的容量达250kVA以上，工作频率可达20kHz。
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tf
Turn-off fall time
VDD = 250 V; RD = 30 Ω; RG = 9.1 Ω
Ld
Internal drain inductance Measured from tab to centre of die
Ld
Internal drain inductance Measured from drain lead to centre of die
CONDITIONS in free air
MIN. TYP. MAX. UNIT
-
- 0.85 K/W
- 60 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
SYMBOL PARAMETER
CONDITIONS
EAS EAR IAS, IAR
Non-repetitive avalanche energy
Unclamped inductive load, IAS = 7.4 A; tp = 0.22 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17
MIN.
- 55
MAX.
500 500 ± 30 8.5 5.4 34 147 150
UNIT
V V V A A A W ˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
30 ID, Drain current (Amps) Tj = 25 C
25
20
15
10
5
PHP8N50
10 V 7V
6.5 V
6V 5.5 V
5V VGS = 4.5 V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS
MIN. TYP. MAX. UNIT
500 -
-
V
- 0.1 - %/K
- 0.6 0.85 Ω
2.0 3.0 4.0 V
3.5 6
-
S
-
1 25 µA
- 40 250 µA
- 10 200 nA
- 55 80 nC - 5.5 7 nC - 30 45 nC
- 18 - ns - 37 - ns - 80 - ns - 36 - ns
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS VDGR VGS ID IDM PD Tj, Tstg
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current
The IRF840 is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
PIN
DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
RDS(ON) VGS(TO)
Drain-source on resistance VGS = 10 V; ID = 4.8 A
Gate threshold voltage
VDS = VGS; ID = 0.25 mA
gfs
Forward transconductance VDS = 30 V; ID = 4.8 A
Tmb / C
Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID% 120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0 0 20 40 60 80 100 120 140
Ls
Internal source inductance Measured from source lead to source
bond pad
Ciss
Input capacitance
Coss
Output capacitance
Crss
FeedbaLeabharlann k capacitanceVGS = 0 V; VDS = 25 V; f = 1 MHz
Philips Semiconductors
PowerMOS transistor Avalanche energy rated
Product specification
IRF840
FEATURES
SYMBOL
• Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance
Total gate charge Gate-source charge Gate-drain (Miller) charge
ID = 8.5 A; VDD = 400 V; VGS = 10 V
td(on)
Turn-on delay time
tr
Turn-on rise time
td(off)
Turn-off delay time
d g
s
QUICK REFERENCE DATA
VDSS = 500 V ID = 8.5 A
RDS(ON) ≤ 0.85 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
0.2
0.1 0.1 0.05 0.02
0.01 single pulse
PD
tp
D = tp T
T
t
0.0011us
10us 100us 1ms
10ms 100ms
1s
tp, pulse width (s)
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
2 RDS(on), Drain-Source on resistance (Ohms) PHP8N50
4.5 V
5V
5.5 V VGS = 6 V Tj = 25 C
1.5 6.5 V 7V
1
10 V
0.5
0
0
5
10
15
20
25
ID, Drain current (Amps)
0.1 1
10
100
1000
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp
Product specification
IRF840
1 Zth j-mb, Transient thermal impedance (K/W) PHP6N60 D = 0.5
IDSS
Drain-source leakage current VDS = 500 V; VGS = 0 V
VDS = 400 V; VGS = 0 V; Tj = 125 ˚C
IGSS
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot) Qgs Qgd
Tmb / C
Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
ID / A 100
10
RDS(ON) = VDS/ID
1
DC
BUK457-500B
tp = 10 us 100 us 1 ms 10 ms 100 ms
trr
Reverse recovery time
IS = 8.5 A; VGS = 0 V; dI/dt = 100 A/µs
Qrr
Reverse recovery charge