2SK3541中文资料

2SK3541中文资料
Transistor
Small switching (30V, 0.1A)
2SK3541
!Applications
Interfacing, switching (30V , 100mA)
!Features
1) Low on-resistance.2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for portable equipment.
4) Easily designed drive circuits.5) Easy to parallel.
!Structure
Silicon N-channel MOSFET
!External dimensions (Units : mm)
!Absolute maximum ratings (T a=25°C)
Parameter
Drain-source voltage Gate-source voltage Drain current Total power dissipation (Tc =25°C)Channel temperature Storage temperature
V DSS V GSS I DR P D
2Tch 30V V mA mA mW °C ±20100I D I DRP ?1mA I DP ?1Continuous Pulsed Continuous Pulsed
mA 400100400150150Tstg
°C
55~+150
Symbol Limits Unit ?1 Pw ≤10μs, Duty cycle <1%
2 With each pin mounted on the recommended lands.
Reverse drain current
!Equivalent circuit
A pr otection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in e a protection circuit when the fixed voltages are exceeded.
Transistor
!Electrical characteristics (T a=25°C)
!Packaging specifications
T2R 8000
2SK3541
Type
Package
Code
Basic ordering unit (pieces)
Taping !Electrical characteristic curves
D R
A I N C U R R E N T : I D (A )
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.1 Typical output characteristics
D R A I N C U R R
E N T : I D (A )
GATE-SOURCE VOLTAGE : V GS (V)Fig.2 Typical transfer characteristics
G A T E T H R E S H O L D V O L T A G E : V G S (t h ) (V )
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
Transistor
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)
DRAIN CURRENT : I D (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)
DRAIN CURRENT : I D (A)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
GATE-SOURCE VOLTAGE : V GS (V)
S T A T I C D R A I N -S O U R
C E O N -S T A T E R E S I S T A N C E : R
D S (o n ) (?)
Fig.6 Static drain-source
on-state resistance vs. gate-source voltage
CHANNEL TEMPERATURE : Tch (°C)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
F O R W A R D T R A N S F E R A D M I T T A N C E : |Y f s | (S ) DRAIN CURRENT : I D (A)
Fig.8 Forward transfer
admittance vs. drain current
R E V E R S E D R A I N C U R R E N T : I D R (A ) SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
R E V E R S E D R A I N C U R R E N T : I D R (A )
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
C A P A C I T A N C E : C (p F )
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.11 Typical capacitance vs.
drain-source voltage
S W I T H I N G T I M E : t (n s )
DRAIN CURRENT : I D (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for the measurement circuit and resultant waveforms)
Transistor
!Switching characteristics measurement circuit
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled
goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0。