STPSC10H12B2-TR 10A, 1200V SiC 超高性能电路级电阻说明书

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STPSC10H12B2-TR
A
K DPAK HV 2L
A
Features
•No or negligible reverse recovery
•Switching behavior independent of temperature
•Robust high voltage periphery
•Operating T j from -40 °C to 175 °C
•Low V F
•DPAK HV creepage distance (anode to cathode) = 3 mm min.
•ECOPACK2 compliant
Applications
•EV Charging station
•Servers
•DC/DC
•PFC
Description
This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature
Housed in DPAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, servers, DC/DC modules, easing the compliance to IEC-60664-1. The STPSC10H12B2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
1200 V, 10 A, silicon carbide power Schottky diode
STPSC10H12B2-TR
Datasheet
STPSC10H12B2-TR
Characteristics 1Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
1.(dP tot/dT j) < (1/R th(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameters
Table 3. Static electrical characteristics
1.Pulse test: t p = 5 ms, δ < 2%
2.Pulse test: t p = 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
•P = 1.03 x I F(AV) + 0.122 x I F2(RMS)
For more information, please refer to the following application notes related to the power losses:
•AN604: Calculation of conduction losses in a power rectifier
•AN4021: Calculation of reverse losses on a power diode
STPSC10H12B2-TR
Characteristics
Table 4. Dynamic electrical characteristics
1.
Most accurate value for the capacitive charge: Q cj V R= ∫0V R C j V dV
STPSC10H12B2-TR
Characteristics (curves) 1.1Characteristics (curves)
STPSC10H12B2-TR Characteristics (curves)
2Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: . ECOPACK is an ST trademark.
2.1DPAK HV 2L package information
•Epoxy meets UL 94,V0

Cooling method: by conduction (C)
Figure 9.
DPAK HV 2L package outline
STPSC10H12B2-TR
Package information
Table 5. DPAK HV 2L package mechanical data
Figure 10. Footprint (dimensions in mm)
1.50
STPSC10H12B2-TR
DPAK HV 2L package information
STPSC10H12B2-TR
DPAK HV 2L package information 2.1.1Creepage distance between Anode and Cathode
Table 6. Creepage distance between anode and cathode
Note:DPAK HV creepage distance (anode to cathode) = 0.3 mm min. (refer to IEC 60664-1)
STPSC10H12B2-TR
Ordering information 3Ordering information
Table 7. Ordering information
Revision history
Table 8. Document revision history
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STPSC10H12B2-TR。

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