41SM30-H58;中文规格书,Datasheet资料

SPU0410HR5H-PB, 规格书,Datasheet 资料

“Ultra‐Mini” SiSonic™ Microphone Specification With MaxRF Protection –Halogen FreeKnowles Acoustics1151 Maplewood DriveItasca, IL 601431. DESCRIPTION AND APPLICATION1.1 Description“Ultra Mini” Surface Mount Silicon Microphone with Maximum RF Protection –Halogen Free 1.2 ApplicationHand held consumer electronics2. PART MARKINGIdentification Number ConventionS 1 2 34 5 6 7S: Manufacturing Location“S” –Knowles Electronics SuzhouSuzhou, China“No Alpha Character” –Knowles Electronics ItascaItasca, IL USA 3“E” –Engineering Samples Digits 1 –7: Job Identification Number3.TEMPERATURE RANGE 3.1 Operating Temperature Range: ‐40°C to +100°C 3.2 Storage Temperature Range: ‐40°C to +100°C4. ACOUSTIC & ELECTRICAL SPECIFICATIONSSymbol ConditionLimitsUnit Min.Nom.Max.Directivity Omni‐directionalSensitivity S@ 1kHz (0dB=1V/Pa)‐45‐42‐39dB Output impedance Z OUT@ 1kHz (0dB=1V/Pa)‐‐‐‐‐‐300ΩCurrent Consumption I DSS across 1.5 to 3.6 volts‐‐‐‐‐‐250μA Signal to Noise Ratio S/N@ 1kHz (0dB=1V/Pa)‐‐‐59‐‐‐dB Supply Voltage Vs 1.5‐‐‐ 3.6VSensitivity Loss acrossVoltage Change in sensitivity over3.6v to 1.5vNo Change Across VoltageRangedBTHD At 100dB SPL, THD < 1%At 115dB SPL, THD < 10%dB5. FREQUENCY RESPONSE CURVE66. MECHANICAL SPECIFICATIONS7. RECOMMENDED CUSTOMER7LAND PATTERN8. RECOMMENDED SOLDER STENCIL PATTERNN/A9. RECOMMENDED INTERFACE CIRCUIT10. DETAIL 10PACKAGING11. SOLDER REFLOW PROFILE170–180°CSolder Melt Pre ‐heat 260°C230°Csec sec Stage Temperature ProfileTime (maximum)Pre ‐heat 170 ~ 180 C 120 sec.Solder Melt Above 230 C 100 sec.100 sec.120 sec.Notes:1.Do not pull a vacuum over the port hole of the microphone. Pulling avacuum over the port hole can damage the device.the reflow process.Board washing and cleaning Peak260 C maximum30 sec.2.Do not board wash afteragents can damage the device. Do not expose to ultrasonic processing or cleaning.3.Number of Reflow = recommend no more than 3 cycles.12ADDITIONAL NOTES (A)Shelf life: Twelve (12) months when devices are to be stored in factory supplied, unopened ESD moisture sensitive bag under maximum environmental conditions of 30ºC, 70% R.H. (B)MSL (moisture sensitivity level) Class 2a.12.13. RELIABILITY SPECIFICATIONSNote: After test conditions are performed, the sensitivity of the microphone shall not deviate more than 3dB from its initial value.Test DescriptionThermal Shock100 cycles of air‐air thermal shock from ‐40C to +125Cwith 15min soaks. (ICE 68‐2‐4)High Temperature St +105C environment for 1,000 hours. (IEC 68‐2‐2 Test Ba)StorageLow TemperatureStorage‐40C environment for 1,000 hours. (IEC 68‐2‐2 Test Aa)High Temperature Bias+105C environment while under bias for 1,000 hours. (IEC68‐2‐2 Test Ba)Low Temperature Bias‐40C environment while under bias for 1,000 hours. (IEC68‐2‐2 Test Aa)Temperature / Humidity Bias +85C/85% RH environment while under bias for 500 hours. (JESD22‐A101A‐B)Vibration4 cycles lasting 12 minutes from 20 to 2,000Hz in X, Y, andZ direction with a peak acceleration of 20g. (MIL 883E,Method 2007.2, A)Electrostatic Discharge3 discharges at +/‐8kV direct contact to the lid when unitis grounded (IEC 61000‐4‐2) and 3 discharges at +/‐2kVdirect contact to the I/O pins (MIL 883E, Method 3015.7) Reflow5 reflow cycles with peak temperature of 260C. Mechanical Shock3 pulses of 10,000g in the X, Y, and Z direction. (IEC 68‐2‐27, Test Ea)14. SPECIFICATION REVISIONSRevision Detailed Specification Changes Date X1Preliminary Specification Release06‐24‐2008A Specification 02172009release‐‐The information contained in this literature is based on our experience to date and is believed to be reliable and it is subject to change without notice.It is intended as a guide for use by persons having technical skill at their own discretion and risk.We do not guarantee favorable results or assume any liability in connection with its use.Dimensions contained herein are for reference purposes only.For specific dimensional requirements consult factory.This publication is not to be taken as a license to operate under,or recommendation to infringe any existing patents.This supersedes and voids all previous literature.。

74271112S;中文规格书,Datasheet资料

7.1 7.0 6.02012-06-272012-04-302008-01-03SStSStSMuSStSMu-Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyTel. +49 (0) 79 42 945 - 0A Dimensions: [mm] Additional FeaturesSafety key to lock/ unkock STAR-CLIP Fixation74271 7427711D2 General Properties:Ferrite core Ferrite core Ferrite core Plastic housing Plastic housing Test cable Test cablePropertiesMaterial Initial permeability Curie temperatureColourFlammability ClassificationApplicable cable Applicable cable lengthµi T CValue 4 W 620620150Black UL94-V0AWG2690Unit°Cmm Tol.typ.typ.F Typical Impedance Characteristics:I Cautions and Warnings:The following conditions apply to all goods within the product series of WE-STAR TECof Würth Elektronik eiSos GmbH & Co. KG:General:All recommendations according to the general technical specifications of the data sheet have to be complied with.The disposal and operation of the product within ambient conditions which probably alloy or harm the component surface has to be avoided.The packaging of the product is to encase the needed humidity of the plastic housing. To ensure the humidity level, the products have to be stored in this delivered packaging. If not, the products are losing their humidity. In this case you can re-condition the components according to the internal standard WE1883 to ensure the necessary humidity in the plastic.To ensure the operating mode of the product, the ambient temperature at processing (when the part will be mounted on the cable) has to be in the range of 15 to 25 °C.Before mounting, the part should be stored for one hour in this condition.The responsibility for the applicability of customer specific products and the use in a particular customer design is always within the authority of the customer. All technical specifications for standard products do also apply for customer specific products.Direct mechanical impact to the product and the forcible closing of this shall be prevented as the ferrite material of the ferrite body or the pla-stic housing could flake or in the worst case it could break.Product specific:Follow all instructions mentioned in the datasheet, especially:•The cable diameter must be pointed out, otherwise no warranty will be sustained.•Violation of the technical product specifications such as exceeding the nominal rated current will result in the loss of warranty.1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the are-as, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibi-lity for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime can-not be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component.3. Best Care and AttentionAny product-specific notes, warnings and cautions must be strictly observed.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve spe-cific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Secti-on 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a stan-dard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability ex-pectancy before or when the product for application design-in disposal is considered.The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .J Important Notes:The following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:分销商库存信息: WURTH-ELECTRONICS 74271112S。

RB520S30;中文规格书,Datasheet资料

RB520S30 — Schottky Barrier Diodes
Physical Dimension
SOD-523F
© 2009 Fairchild Semiconductor Corporation
RB520S30 Rev. A2
4
/
Units
VRRM
Maximum Repetitive Reverse Voltage
30
V
IF(AV)
Average Rectified Forward Current
200
mA
TJ
Operating Junction Temperature Range
-55 to +125
°C
TSTG
Storage Temperature Range
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVR Breakdown Voltage IR Reverse Leakage Current VF Forward Voltage
• Green Mold Compound
SOD-523F Band Indicates Cathode RB520S30 Marking : 1B
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
Value
Parameter
PD RθJA
Total Device Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient

SPU0414HR5H-SB, 规格书,Datasheet 资料

3. TEMPERATURE RANGE
3.1 Operating Temperature Range: -40 C to +100 C 3.2 Storage Temperature Range: -40 C to +100 C
Knowles Acoustics, a division of Knowles Electronics, LLC.
Identification Number Convention S 4 1 5 2 6 3 7
S: Manufacturing Location "S" - Knowles Electronics Suzhou Suzhou, China "No Alpha Character" - Knowles Electronics Itasca, IL USA "E" - Engineering Samples Digits 1-7: Job Identification Number
Date
4-23-2009 10-21-2010
The information contained in this literature is based on our experience to date and is believed to be reliable and it is subject to change without notice. It is intended as a guide for use by persons having technical skill at their own discretion and risk. We do not guarantee favorable results or assume any liability in connection with its use. Dimensions contained herein are for reference purposes only. For specific dimensional requirements consult factory. This publication is not to be taken as a license to operate under, or recommendation to infringe any existing patents. This supersedes and voids all previous literature.

BSS84AKS,115;中文规格书,Datasheet资料

1.Product profile1.1General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology.1.2Features and benefitsLogic-level compatible Very fast switchingTrench MOSFET technologyESD protection up to 1 kV AEC-Q101 qualified1.3ApplicationsRelay driverHigh-speed line driverHigh-side loadswitch Switching circuits1.4Quick reference data[1]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm 2.BSS84AKS50 V, 160 mA dual P-channel Trench MOSFETRev. 1 — 23 May 2011Product data sheetTable 1.Quick reference data Symbol ParameterConditions Min Typ Max Unit Per transistorV DS drain-source voltage T j =25°C---50V V GS gate-source voltage -20-20VI D drain currentV GS =-10V;T amb =25°C [1]---160mA Static characteristics (per transistor)R DSondrain-source on-state resistanceV GS =-10V;I D =-100mA; T j =25°C-4.57.5Ω2.Pinning information3.Ordering information4.Marking[1]% = placeholder for manufacturing site codeTable 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol1S1source 1SOT363 (TSSOP6)2G1gate 13D2drain 24S2source 25G2gate 26D1drain 1132456sym147G1G2Table 3.Ordering informationType numberPackage NameDescriptionVersion BSS84AKSTSSOP6plastic surface-mounted package; 6 leadsSOT363Table 4.Marking codesType number Marking code [1]BSS84AKS%VY5.Limiting valuesTable 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit Per transistorV DS drain-source voltage T j=25°C--50VV GS gate-source voltage-2020VI D drain current V GS=-10V; T amb=25°C[1]--160mAV GS=-10V; T amb=100°C[1]--100mA I DM peak drain current T amb=25°C; single pulse; t p≤10µs--640mA P tot total power dissipation T amb=25°C[2]-280mW[1]-320mWT sp=25°C-990mW Per deviceP tot total power dissipation T amb=25°C[2]-445mW T j junction temperature-55150°C T amb ambient temperature-55150°C T stg storage temperature-65150°C Source-drain diodeI S source current T amb=25°C[1]--160mA ESD maximum ratingV ESD electrostatic discharge voltage HBM[3]-1000V[1]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.[2]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.[3]Measured between all pins.6.Thermal characteristicsTable 6.Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit Per deviceR th(j-a)thermal resistance from junction to ambient in free air[1]--300K/W Per transistorR th(j-a)thermal resistance from junction to ambient in free air[1]-390445K/W[2]-340390K/W R th(j-sp)thermal resistance from junction to solder point--130K/W[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.7.CharacteristicsTable 7.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor)V(BR)DSS drain-source breakdownvoltageI D=-10µA; V GS=0V;T j=25°C-50--VV GSth gate-source thresholdvoltageI D=-250µA; V DS=V GS; T j=25°C-1.1-1.6-2.1VI DSS drain leakage current V DS=-50V; V GS=0V; T j=25°C---1µAV DS=-50V; V GS=0V; T j=150°C---2µA I GSS gate leakage current V GS=-20V;V DS=0V; T j=25°C---10µAV GS=20V;V DS=0V; T j=25°C---10µAR DSon drain-source on-stateresistance V GS=-10V;I D=-100mA; T j=25°C- 4.57.5ΩV GS=-10V;I D=-100mA; T j=150°C-813.5ΩV GS=-5V; I D=-100mA; T j=25°C- 5.78.5Ωg fs forward transconductance V DS=-10V; I D=-100mA; T j=25°C-150-mS Dynamic characteristics (per transistor)Q G(tot)total gate charge V DS=-25V; I D=-200mA; V GS=-5V;T j=25°C -0.260.35nCQ GS gate-source charge-0.12-nC Q GD gate-drain charge-0.09-nCC iss input capacitance V DS=-25V; f=1MHz; V GS=0V;T j=25°C -2436pFC oss output capacitance- 4.5-pF C rss reverse transfercapacitance- 1.3-pFt d(on)turn-on delay time V DS=-30V; R L=250Ω; V GS=-10V;R G(ext)=6Ω; T j=25°C -1326nst r rise time-11-ns t d(off)turn-off delay time-4896ns t f fall time-25-ns Source-drain diode (per transistor)V SD source-drain voltage I S=-115mA; V GS=0V; T j=25°C-0.48-0.85-1.2V分销商库存信息: NXPBSS84AKS,115。

Ra-01S规格书说明书

文档“按现状”提供，不负任何担保责任，包括对适销性、适用于特定用途或非侵权性的任何担保，和任何提案、规格或样品在他处提到的任何担保。

本文档不负任何责任，包括使用本文档内信息产生的侵犯任何专利权行为的责任。

本文档在此未以禁止反言或其他方式授予任何知识产权使用许可，不管是明示许可还是暗示许可。

文中所得测试数据均为安信可实验室测试所得，实际结果可能略有差异。

文中提到的所有商标名称、商标和注册商标均属其各自所有者的财产，特此声明。

最终解释权归深圳市安信可科技有限公司所有。

注意由于产品版本升级或其他原因，本手册内容有可能变更。

深圳市安信可科技有限公司保留在没有任何通知或者提示的情况下对本手册的内容进行修改的权利。

本手册仅作为使用指导，深圳市安信可科技有限公司尽全力在本手册中提供准确的信息，但是深圳市安信可科技有限公司并不确保手册内容完全没有错误，本手册中的所有陈述、信息和建议也不构成任何明示或暗示的担保。

文件制定/修订/废止履历表版本日期制定/修订内容制定核准V1.02020.8.12首版徐V1.12020.8.19更新部分参数徐目录一、产品概述 (5)二、电气参数 (6)三、外观尺寸 (8)四、管脚定义 (10)五、原理图 (11)六、设计指导 (12)七、回流焊曲线图 (14)八、包装信息 (15)九、联系我们 (15)一、产品概述安信可LoRa系列模块（Ra-01S）由安信可科技设计开发。

该模组用于超长距离扩频通信，其射频芯片SX1268主要采用LoRa™远程调制解调器，用于超长距离扩频通信，抗干扰性强，能够最大限度降低电流消耗。

借助SEMTECH的LoRa™专利调制技术，SX1268具有超过-148dBm的高灵敏度，+22dBm的功率输出，传输距离远，可靠性高。

同时，相对传统调制技术，LoRa™调制技术在抗阻塞和选择方面也具有明显优势，解决了传统设计方案无法同时兼顾距离、抗干扰和功耗的问题。

DSEI60-06A;中文规格书,Datasheet资料

166 W
0.8...1.2 Nm
6
g
Symbol
IR
VF
VT0 rT RthJC RthCH trr IRM
Conditions
Characteristic Values typ. max.
VR = VRRM VR = 0.8·VRRM VR = 0.8·VRRM
TVJ = 25°C TVJ = 25°C TVJ = 125°C
IXYS reserves the right to change limits, test conditions and dimensions
© 2007 IXYS All rights reserved
/
0549
2-2
Dimensions TO-247 AD
C
D
t = 8.3 ms (60 Hz), sine
TC = 25°C mounting torque typical
Maximum Ratings
100 A 60 A
550 A 600
480 A 520Biblioteka 1510 A2s 1490
1150 A2s 1120
-55...+150 °C 150 °C
-55...+150 °C
Fast Recovery Epitaxial Diode (FRED)
DSEI60-06A DSEI60-06AT
IFAV = 60 A VRRM = 600 V trr = 35 ms
VRSM V
600 600
VRRM V
600 600
Type
DSEI 60-06A DSEI 60-06AT
A

SGH30N60RUFDTU;中文规格书,Datasheet资料

-- 1733 2430 uJ
--
34
--
ns
--
67
--
ns
--
60
90
ns
--
281 400
ns
--
921
--
uJ
-- 1556 --
uJ
-- 2477 3470 uJ
10
--
--
us
--
85 120 nC
--
17
25
nC
--
39
55
nC
--
14
--
nH
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
E
SGH30N60RUFD 600 ± 20 48 30 90 25 220 10 235 90
-55 to +150 -55 to +150
300
Typ. ----
Max. 0.53 0.83 40
Units V V A A A A A us W W °C °C °C
Units °C/W °C/W °C/W
Symbol VCES VGES
IC
ICM (1) IF IFM TSC PD
TJ Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current Collector Current Pulsed Collector Current
Thermal Characteristics

IXTP08N100D2;IXTY08N100D2;IXTA08N100D2;中文规格书,Datasheet资料

Characteristic Values Min. Typ. Max. 1000 - 2.0 - 4.0 V V
±50 nA 1 μA 15 μ A 21 800 Ω mA
© 2009 IXYS CORPORATION, All Rights Reserved
DS100182A(12/09)
/
VGS = - 3.00V - 3.25V - 3.50V - 3.75V - 4.00V
1E-02
ID - Amperes
ID - Amperes
0.5 0.4 0.3 0.2 0.1
-1V
1E-04
1E-05
1E-06
- 4.25V
-2V
1E-07
-3V 0.0 0 5 10 15 20 25 30
G
DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages • Easy to Mount • Space Savings • High Power Density Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads
Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 800V, ID = 45mA, TC = 75°C, Tp = 5s Characteristic Values Min. Typ. Max. 36 W

M5839中文规格书

恒流工作
M5839 的恒压/恒流特征曲线如图 1 所示。M5839 被设计应用于工作在非连续模式下的反激式系统中。
在正常工作时，当 INV 电压低于内部 2.0V 的基准电压好时，系统工作在恒流模式，否则系统工作在恒压
模式。当次级输出电流达到了系统设定的最大电流时，系统就进入恒流模式，并且会引起输出电压的下降。
M5839 在 CS 端设计了一个约为 540ns 的前沿消隐时间用来防止在开关导通时刻错误的过流保护被触发。因此，不需要在 CS 端在增加额外的 RC 滤波电路。采样电流的输入信号 CS 和误差放大器的输出 COM 共同决定开关的占空比，稳定输出. EMI 特性的改善
为了改善 M5839 系统的 EMI 特性，芯片内部采用了两种方式。其中一种方式是采用频率抖动，即在 M5839 正常工作频率的基础上叠加一个微小的扰动。也就是说，内部振荡器的频率被调制用来分散谐波干扰能量，分散的能量能够最小化 EMI 带宽。另一种方式是软驱动，即逐渐打开功率 MOSFET。当提供给功率 MOSFET 的栅驱动太强时， EMI 特性会变差；当提供给功率 MOSFET 的栅驱动太弱时，开关损耗又会加大，因此需要在 EMI 特性和开关损耗之间寻求折衷来提供合适的栅驱动。M5839 采用了软驱动和图腾柱输出结构，既获得了很好的 EMI 特性，又降低了开关损耗。频率抖动和软驱动的综合应用使系统的 EMI 特性获得了很大的改善。保护控制
4/8
V1.0 版
M5839
流/恒压控制，系统必须工作在反激式系统的非连续模式。（参照典型应用电路）在非连续模式的反激式转换器中，输出电压能够通过辅助绕组来设定。当功率 MOSFET 导通时，负载电流由输出滤波电容 CO 提供，原边电流呈斜坡上升，系统将能量存储在变压器的磁芯中，当功率 MOSFET 关断时，存储在变压器磁芯中的能量传递到输出。

IXSH35N120A;中文规格书,Datasheet资料

1250
18
TJ = 125°C
IC = 35A
1000
17
tfi
750
16
Eoff - millijoules tfi - nanoseconds
500
10
Eoff
250 0
5 10 20 30 40 50 60 70
IC - Amperes
Fig.9 Gate Charge Characteristic Curve
W RG = 2.7
dV/dt < 5V/ns
1
0.1
0.01 0
200 400 600 800 1000 1200 VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
0.1 D=0.2 D=0.1
D=0.05 D=0.02 0.01 D=0.01
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
70
A
35
A
140
A
ICM = 70
A
@ 0.8 VCES
10
ms
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
BVCES V
GE(th)
I
CES
10
9
TJ = 25°C
8
7
6
5
IC = 70A

HIH6130-021-001;HIH6131-021-001;中文规格书,Datasheet资料

Thermal Hysteresis
Total Error Band should not be confused with “Accuracy”, which is actually a component of Total Error Band. Many competitors simply specify the accuracy of their device; however, the specification may exclude hysteresis and temperature effects, and may be calculated over a very narrow range, at only one point in the range, or at their absolute best accuracy level. It is then up to the customer to calibrate the device to make sure it has the accuracy needed for the life of the application. Honeywell’s industry-leading Total Error Band provides the following benefits to the customer: Eliminates individually testing and calibrating every sensor, which can increase their manufacturing time and process Supports system accuracy and warranty requirements Helps to optimize system uptime Provides excellent sensor interchangeability—the customer can remove one sensor from the tape, remove the next sensor from the tape, and there is no part-to-part variation in accuracy For more information about Total Error Band, please see the related Technical Note “Explanation of the Total Error Band Specification for Honeywell’s Digital Humidity/Temperature Sensors.”

SHT30中文资料资料

SHT30温湿度传感器部分翻译资料3 Pin Assignment3、引脚分配The SHT3x-DIS comes in a tiny 8-pin DFN package see Table 6.SHT3x-DIS 是一个8位的DFN小包，见表63.1 Power Pins (VDD, VSS)3.1、电源引脚（VDD, VSS）The electrical specifications of the SHT3x-DIS are shown in Table 3. The power supply pins must be decoupled with a 100 nF capacitor that shall be placed as close to the sensor as possible – see Figure 11 for a typical application circuit.SHT3x-DIS的电气参数如表3所示。

电源引脚必须与一个100nF的电容器尽可能地隔离，以便尽可能靠近传感器——请参见典型应用电路图11。

3.2 Serial Clock and Serial Data (SCL, SDA)3.2、串行时钟和串行数据（SCL，SDA）SCL is used to synchronize the communication between microcontroller and the sensor. The clock frequency can be freely chosen between 0 to 1000 kHz. Commands with clock stretching according to I2C Standard 11 are supported.SCL用于同步微控制器和传感器之间的通信。

时钟频率可以在0到1000千赫之间自由选择。

支持按I2C标准11进行时钟扩展的命令。

SILICON SM5812 5852 Datasheet

SILICONMICROSTRUCTURES I N C O R P O R A T E DSM5812/SM5852Amplified Pressure Sensor• N OW WITH ACCESS TO D IGITAL T EMPERATURE AND C ORRECTED D IGITAL P RESSURE • L OW -COST , FULLY AMPLIFIED , CALIBRATED , AND COMPENSATED IN A SINGLE PACKAGE• A VAILABLE FOR D IFFERENTIAL , S INGLE -ENDED DIFFERENTIAL , G AGE & A BSOLUTE APPLICATIONS •M ULTIPLE PRESSURE RANGES AVAILABLE TO MEASURE PRESSURE DOWN TO 0.15 PSI FULL -SCALEAND UP TO 100 PSI FULL -SCALEDESCRIPTIONThe Silicon Microstructures SM5812 and SM5852 series of OEM pressure sensors combines state-of-the-art pressure sensor technology with CMOS digital signal processing technology to produce an amplified, fully conditioned, multi-order pressure and temperature compensated sensor in a dual in-line package (DIP) configuration.Combining the pressure sensor with acustom signal conditioning ASIC in a single package simplifies the use of advanced silicon micromachined pressure sensors. Now, the pressure sensor can be mounted directly to a standard printed circuit board and an amplified, high level, calibrated pressure signal can be acquired from the digital interface or analog output. This eliminates the need of additional circuitry, such as a compensation network or micro-controller containing a custom correction algorithm.The SM5812/SM5852 Series pressure sensors are based on SMI's highly stable, piezoresistive pressure sensor chips mounted on a ceramic substrate. An electronically programmable ASIC iscontained in the same package to provide calibration and temperature compensation.The model SM5812 is designed foroperating pressure ranges from 0-5 PSI up to 0-100 PSI. The model SM5852 isdesigned for operating pressure ranges from 0-0.15 PSI up to 0-3 PSI. For both models, the sensor output is ratiometric with the supply voltage.FEATURES• Amplified, calibrated, fully signalconditioned output span of 4.0 VDC FS (0.5 to 4.5 V signal)• Digital temperature and calibratedpressure available through I 2C interface • Output ratiometric with supply voltage • Multi-order correction for pressure non-linearity (factory programmed)• Multi-order correction for temperature coefficient of span and offset (factory programmed)• Gage, differential, and absolute versions •SMI’s unique low-pressure die allows for a full-scale pressure range of 0-0.15 PSITYPICAL APPLICATIONS• Barometric measurement • Medical instrumentation • Pneumatic control • Gas flow• Respirators and ventilators•Heating, Ventilation and Air Conditioning (HVAC)查询SM5812-005-A-3-L供应商SM5812/SM5852THEORY OF OPERATIONThe operation of the signal processor is depicted in the block diagram below. The external pressure sensor is a piezoresistive bridge. This transduces the applied pressure into an electronic signal, which is then inputted into the integrating amplifier of the ASIC. During the amplification step an offset correction factor is added in order to allow maximum gain for a given pressure while minimizing the offset error.The signal is then passed to an 11-bit analog to digital converter (ADC). The ADC samples the signal multiple times and uses the sum of those samples as a 13-bit word.A digital signal processor (DSP) is then used to correct and calibrate the pressure signal. The DSP provides multi-order correction of both pressure and temperature non-linearity through the use of factory-programmed coefficients. A combined total of twenty coefficients are available for correcting pressure and temperature non-linearity. The unique coefficients are determined during a calibration process performed at the factory. Factory calibration is the last step performed which means the effect of the package on the pressure signal will also be taken into account. This provides a great advantage over conventional laser-trimming approaches.The DSP outputs a corrected digital word, which travels to a 12-bit digital to analog converter (DAC) to provide a calibrated analog output. In addition to the analog output, the corrected pressure signal is accessible through an I2C digital interface. See SMI application note AN05-001 for a detailed description of how to read out the digital corrected pressure signal using theI2C bus interface.Analog OutputSDA SCLSILICONMICROSTRUCTURES I N C O R P O R A T E DSM5812/SM5852CHARACTERISTICS FOR SM5812/SM5852 – SPECIFICATIONSAll parameters are measured at room temperature while applying 5.000V supply, unless otherwise specified.Absolute 1, Gage & Single 2DifferentialMIN TYP MAX MIN TYP MAX UNITS NOTES Zero output (absolute and gauge) 0.42 0.50 0.58 V 3 Zero output (differential)2.422.502.58V3Output Span3.924.00 4.08 1.96 2.00 2.04 V FS 3, 40.15 PSI 3.80 4.00 4.20 1.90 2.00 2.10 V FS 3, 4 Linearity -0.5 +0.5 -0.5 +0.5 %FS 5 0.15 PSI-2.5+2.5-2.5+2.5%FS5 Pressure hysteresis 5812 -0.1 +0.1 -0.1 +0.1 %FS5852 -0.3+0.3 -0.3 +0.3 %FS Temperature coefficient - Zero-1.0 +1.0 -1.0 +1.0 %FS 0.15 PSI-2.5 +2.5 -2.5 +2.5 %FS Temperature coefficient – Span-1.0 +1.0 -1.0 +1.0 %FS 0.15 PSI-2.0 +2.0 -2.0 +2.0 %FS Thermal hysteresis -0.1 +0.1 -0.1 +0.1 %FS Response Time 2 2 msec Supply voltage 4.75 5.00 5.25 4.75 5.00 5.25 V 3, 7Current consumption10 10 mAOverpressure 5812 3X 3X %FS 65852 15X15X %FS 6 Operating temperature range -40 25 +125 -40 25 +125 °C Compensated temperature range 0 25 +70 0 25 +70 °CStorage temperature range -5525+135-5525+135°CMedia compatibility 8Weight 3 3 gramNotes: 1. Absolute parts are only offered in the SM5812 Series.2. Single-ended parts (Pressure Type - S) have 2 ports and are for higher gain differential applications where the differential pressure is always positive.3. Sensor output is ratiometric to supply.4.Full-scale (FS) is defined as zero pressure to rated pressure; differential parts can be used ±FS. Absolute and Gauge zero output is 0.5 V typical and full-scale output is 4.5 V. Span is the difference between Full-scale output and zero output, (4 V). For Differential parts, the negative full-scale is typically at 0.5 V, zero is typically 2.5 V, and positive full-scale is 4.5 volts to give a span of ±2.0 V.5. Defined as best fit straight line for positive pressure applied to the part6. Or 225 PSI, whichever is less. Output amplifier will saturate at about 0.25 V for applied pressure below the rated Zero and at about 4.75 V for applied pressure above the rated Full-scale.7. A 100 nF filter capacitor must be placed between Vsupply and Ground.8.Clean, dry gas compatible with wetted materials. Wetted materials include Pyrex glass, silicon, alumina ceramic, epoxy, RTV, gold, aluminum, and nickel.SM5812/SM5852ADDITIONAL INFORMATIONFull-Scale Pressure RangesSM5812 PSI [kPa] SM5852 PSI [kPa]005 5 [34.5] 001 0.15 [1.0] 015 15 [103.4]003 0.30 [2.1] 030 30 [206.8]008 0.80 [5.5] 060 60 [413.7]015 1.50 [10.3] 100 100[689.5]030 3.00 [20.7]。

好达电子 49s-smd-4.000-20-30-30-a规格书说明书

规格书编号SPEC NO : HD20170429-01-产品规格书S P E C I F I C A T I O NCUSTOMER客户：PRODUCT 产品：CRYSTAL RESONATORMODEL NO 型号：49S-SMD-4.000-20-30/30/APREPARED 编制：LEO CHECKED 审核：JENNYAPPROVED 批准：PERCY D A T E日期：2017-04-29客户确认CUSTOMER RECEIVED:审核CHECKED 批准APPROVED 日期DATE无锡市好达电子有限公司Shoulder Electronics Limited更改历史记录History Record更改日期Date 规格书编号Spec No产品型号Part No客户产品型号Customer No更改内容描述Modify Content备注Remark1. GENERAL SPECIFICATIONS:FREQUENCY RANGE 4.000MHzLOAD CAPACITANCE 20PFFREQUENCY TOLERANCE AT 25℃+/-2℃–/+30PPMFREQUENCY STABILITY AT –20 TO +70℃–/+30PPMOPERATING TEMPERATURE RANGE –20 TO +70℃OSCILLATING MODE/CUTTING Fundamental AT-CUT STORAGE TEMPERATURE RANGE –40 TO +85℃EQUIVALENT SERIES RESISTANCE (ESR) 120ΩMAXDRIVE LEVEL 100μWSHUNT CAPACITANCE 7PF MAXAGING –/+5PPM PER YEAR INSULATION RESISTANCE 500 MOhm MIN 2. DIMENSIONS3. MECHANICAL SPECIFICATIONReliability specification（信赖性测试）1.Mechanical endurance 机械性能A.SHOCK TEST 抗冲击能力测试Electrical requirement and specification of ITEM 3.A and 3.C shall be satisfied after dropping three times from the height of 75 cm onto hard woden board of thickness more than 30 mm.75 cm高度自然落在30 mm厚硬木板上3次后，电气特性检查满足第3条的A项及C项规格。

RA30H0608M-01中文资料

MITSUBISHI RF MOSFET MODULERA30H0608M68-88MHz 30W 12.5V MOBILE RADIO ELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONSTENTAT V • Low-Power Control Current I GG =1mA (typ) at V GG =5V • Module Size: 66 x 21 x 9.88 mm• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input powerORDERING INFORMATION:ORDER NUMBER SUPPLY FORM RA30H0608M-E01RA30H0608M-01(Japan - packed without desiccator)Antistatic tray, 10 modules/tray5MAXIMUM RATINGS (T case =+25°C, unless otherwise specified)SYMBOL PARAMETER CONDITIONS RATING UNIT V DD Drain Voltage V GG <5V17 V V GG Gate Voltage V DD <12.5V, P in =0mW 6 V P in Input Power 100 mW P out Output Powerf=68-88MHz, Z G =Z L =50Ω 45 W T case(OP) Operation Case Temperature Range-30 to +110 °C T stgStorage Temperature Range-40 to +110°CThe above parameters are independently guaranteed.ELECTRICAL CHARACTERISTICS (T case =+25°C, Z G =Z L =50Ω, unless otherwise specified) All parameters, conditions, ratings, and limits are subject to change without notice.OUTLINE DRAWING (mm)1 RF Input (P in )2 Gate Voltage (V GG )3 Drain Voltage (V DD )4 RF Output (P out )5 RF Ground (Case)12.0 ±1 16.5 ±143.5 ±155.5 ±1Ø0.45 ±0.1551234(50.4)1 RF Input (P in)2 Gate Voltage (V GG)3 Drain Voltage (V DD)4 RF Output (P out)5 RF Ground (Case)EQUIVALENT CIRCUITPRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:Construction:This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.Following conditions must be avoided:a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)d) Frequent on/off switching that causes thermal expansion of the resine) ESD, surge, overvoltage in combination with load VSWR, and oscillationESD:This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting:Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added).A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.Soldering and Defluxing:This module is designed for manual soldering.The leads must be soldered after the module is screwed onto the heat sink.The soldering temperature must be lower than 260°C for a maximum of 10 seconds, or lower than 350°C for a maximum of three seconds.Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires).Thermal Design of the Heat Sink:At P out=30W, V DD=12.5V and P in=50mW each stage transistor operating conditions are:Stage P in(W)P out(W)R th(ch-case)(°C/W)I DD@ ηT=40%(A)V DD(V)1st0.05 5.0 4.5 0.952nd 5.0 30.0 1.2 5.012.5The channel temperatures of each stage transistor T ch = T case + (V DD x I DD - P out + P in) x R th(ch-case) are: T ch1 = T case + (12.5V x 0.95A – 5.0W + 0.05W) x 4.5°C/W = T case + 31.2 °CT ch2 = T case + (12.5V x 5.0A - 30.0W + 5.0W) x 1.2°C/W = T case + 45.0 °CFor long-term reliability, it is best to keep the module case temperature (T case) below 90°C. For an ambient temperature T air=60°C and P out=30W, the required thermal resistance R th (case-air) = ( T case - T air) / ( (P out / ηT ) - P out + P in ) of the heat sink, including the contact resistance, is:R th(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/WWhen mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor is:T ch1 = T air + 61.2 °CT ch2 = T air + 75.0 °CThe 175°C maximum rating for the channel temperature ensures application under derated conditions.Output Power Control:Depending on linearity, the following two methods are recommended to control the output power:a) Non-linear FM modulation:By the gate voltage (V GG).When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain.Around V GG=4V, the output power and drain current increases substantially.Around V GG=4.5V (typical) to V GG=5V (maximum), the nominal output power becomes available.b) Linear AM modulation:By RF input power P in.The gate voltage is used to set the drain’s quiescent current for the required linearity.Oscillation:To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.When an amplifier circuit around this module shows oscillation, the following may be checked:a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?b) Is the load impedance Z L=50Ω?c) Is the source impedance Z G=50Ω?Frequent on/off switching:In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress.Quality:Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios.This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.Keep safety first in your circuit designs!Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap.SALES CONTACTJAPAN:Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-kuTokyo, Japan 100Email: sod.sophp@hq.melco.co.jp Phone: +81-3-3218-4854Fax: +81-3-3218-4861GERMANY:Mitsubishi Electric Europe B.V. SemiconductorGothaer Strasse 8D-40880 Ratingen, Germany Email: @ Phone: +49-2102-486-0Fax: +49-2102-486-3670HONG KONG:Mitsubishi Electric Hong Kong Ltd. Semiconductor Division41/F. Manulife Tower, 169 Electric Road North Point, Hong KongEmail: scdinfo@ Phone: +852 2510-0555Fax: +852 2510-9822 FRANCE:Mitsubishi Electric Europe B.V. Semiconductor25 Boulevard des BouvetsF-92741 Nanterre Cedex, France Email: @ Phone: +33-1-55685-668Fax: +33-1-55685-739SINGAPORE:Mitsubishi Electric Asia PTE Ltd Semiconductor Division307 Alexandra Road#3-01/02 Mitsubishi Electric Building, Singapore 159943Email: semicon@ Phone: +65 64 732 308Fax: +65 64 738 984 ITALY:Mitsubishi Electric Europe B.V. SemiconductorCentro Direzionale Colleoni, Palazzo Perseo 2, Via ParacelsoI-20041 Agrate Brianza, Milano, Italy Email: @ Phone: +39-039-6053-10Fax: +39-039-6053-212TAIWAN:Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department9F, No. 88, Sec. 6Chung Shan N. RoadTaipei, Taiwan, R.O.C.Email: metwnssi@ Phone: +886-2-2836-5288Fax: +886-2-2833-9793 U.K.:Mitsubishi Electric Europe B.V. SemiconductorTravellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: @ Phone: +44-1707-278-900Fax: +44-1707-278-837U.S.A.:Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group1050 East Arques AvenueSunnyvale, CA 94085Email: customerservice@ Phone: 408-730-5900Fax: 408-737-1129CANADA:Mitsubishi Electric Sales Canada, Inc. 4299 14th AvenueMarkham, Ontario, Canada L3R OJ2 Phone: 905-475-7728Fax: 905-475-1918AUSTRALIA:Mitsubishi Electric Australia, Semiconductor Division348 Victoria RoadRydalmere, NSW 2116 Sydney, AustraliaEmail: semis@ Phone: +61 2 9684-7210+61 2 9684 7212+61 2 9684 7214+61 3 9262 9898 Fax: +61 2 9684-7208+61 2 9684 7245。

SM系列规格书

SM型功率电感器特性：●有出色的高抗饱和性能●体积小，厚度薄用途：●可用于DC-DC变压器和充电器中作储能电感和滤波电感。

外观尺寸：1.SM型电感器外形尺寸规格编码：SM 3521 – 1R0 M (f)○1○2○3○4○5①产品类型代号：②外形尺寸：直径×厚度如：3521：3.5×2.1③标称值：电感器电感量（L）用三位数字、字母表示：对L≥10μH，用三位数字表示，ABC＝AB×10C，单位为微亨，如：100：10μH、121：120μH；对1.0nH≤L＜10μH，用二位数字和表示小数点位置的字母R表示，单位为微亨：如2N7：2.7nH、R10：0.1μH。

○4公差值：用字母“N”表示电感器公差：J＝±5%，K＝±10%，M＝±20%，N＝±30%○5表示无铅产品规格特性：SM3511系列□:表示电感量偏差代号为K、M或者N。

K：±10%；M：±20%；N：±30% SM3516系列□:表示电感量偏差代号为K、M或者N。

K：±10%；M：±20%；N：±30%SM3521系列□:表示电感量偏差代号为K、M或者N。

K：±10%；M：±20%；N：±30%□:表示电感量偏差代号为K、M或者N。

K：±10%；M：±20%；N：±30% SM5845系列□:表示电感量偏差代号为K、M或者N。

K：±10%；M：±20%；N：±30% SM7835系列□:表示电感量偏差代号为K、M或者N。

K：±10%；M：±20%；N：±30% SM7850系列□:表示电感量偏差代号为K、M或者N。