MBR30020CT中文资料

合集下载

MBR2060CT;MBR2050CT;MBR2045CT;MBR2035CT;中文规格书,Datasheet资料

MBR2035CT-MBR2060CT
MBR2035CT - MBR2060CT
Features • • • • • •
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
20
150 125 100 75 50 25 0
16
12
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS
8
4
0
0
25
50 75 100 125 Ambient Temperature [ºC]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
2000 1000 500
MBR2050CT-MBR2060CT MBR2035CT-MBR2045CT
Transient Thermal Impedance [ºC/W]
Thermal Characteristics

MBR10200CT-MBR20100CT ASEMI高压肖特基二极管规格

MBR10200CT ASEMI高压肖特基二极管
肖特基二极管MBR10200CT参数规格：
肖特基二极管MBR10200CT电流：10A；
肖特基二极管MBR10200CT电压：200V；
肖特基二极管MBR10200CT管装：50/管；盒装：1000PCS/盒。

肖特基二极管广泛应用于开关电源、变频器、驱动器等电路，作高频、低压、大电流整流二极管、续流二极管、保护二极管使用，或在微波通信等电路中作整流二极管、小信号检波二极管使用。

MBR10200CT ITO-220AB肖特基二极管PDF资料
MBR10200CT肖特基类型：高结温芯片，品牌：ASEMI，
应用市场：电源，小家电，LED电源，各式充电器，开关电源，LED显示屏等。

MBR10200CT肖特基相关参数如下：
MBR10200CT电压Vrrm:200V
MBR10200CT电流If平均：10A
MBR10200CT正向电压Vf最大：0.87V
MBR10200CT电流，Ifs最大：150A
MBR10200CT工作温度范围：-40°C to+150°C
MBR10200CT封装形式：TO-220/TO-220F/ITO-220
MBR10200CT反向恢复电流，Irrm:10UA
肖特基系列型号：
MBR1040CT,MBR1045CT,MBR1060CT,MBR1060FCT, MBR10100CT,MBR10100FCT,MBR10150FCT,MBR10150CT, MBR10200FCT,MBR10200CT
肖特基二极管封装：TO-251,TO-252,TO-263,
TO-220,TO-247,TO-3P。

MBR30H100CT中文资料

MBR30H100CT , MBRF30H100CT & MBRB30H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number New ProductReverse Voltage 90 to 100VForward Current 30A Maximum T J 175°CMounting Pad Layout TO-263ABITO-220AB (MBRF30H90CT, MBRF30H100CT)(MBR30H90CT, MBR30H100CT)TO-263AB (MBRB30H90CT, MBRB30H100CT)Features• Plastic package has Underwriters Laboratory Flammability Classification 94V-0• Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency• Guardring for overvoltage protection• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applicationsMechanical DataCase:JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic bodyTerminals:Plated leads, solderable per MIL-STD-750, Method 2026High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case Polarity:As markedMounting Position: AnyMounting Torque:10 in-lbs maximum Weight:0.08oz., 2.24gMBR30H100CT , MBRF30H100CT & MBRB30H100CT SeriesVishay Semiconductorsformerly General Semiconductor Document Number 88791Maximum Ratings (TC= 25°C unless otherwise noted)ParameterSymbol MBR30H90CTMBR30H100CTUnit Maximum repetitive peak reverse voltage V RRM 90100V Working peak reverse voltage V RWM 90100V Maximum DC blocking voltageV DC 90100V Maximum average forward rectified current Total device 30(see fig. 1)Per leg I F(AV)15A Peak forward surge current8.3ms single half sine-wave superimposed I FSM 275A on rated load (JEDEC Method) per legPeak repetitive reverse current per leg at t p = 2µs, 1KH Z I RRM 1.0A Voltage rate of change (rated V R )dv/dt 10,000V/µs Operating junction and storage temperature range T J , T STG –65 to +175°C RMS Isolation voltage (MBRF type only) from terminals 4500(1)to heatsink with t = 1 second, RH ≤30%V ISOL3500(2)V1500(3)Electrical Characteristics (TC= 25°C unless otherwise noted)ParameterSymbolValue Unit at I F = 15A, T J = 25°C 0.82Maximum instantaneous at I F = 15A, T J = 125°C V F0.67Vforward voltage per leg (4)at I F = 30A, T J = 25°C 0.93at I F = 30A, T J = 125°C0.80Maximum reverse current per leg T J = 25°C 5.0µA at working peak reverse voltage (4)T J = 125°CI R6.0mAThermal Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol MBR MBRF MBRB UnitTypical thermal resistance per legR θJC1.94.61.9OC/WNotes:(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)(4) Pulse test: 300µs pulse width, 1% duty cycleOrdering InformationProductCase Package CodePackage OptionMBR30H90CT - MBR30H100CT TO-220AB 45Anti-Static tube, 50/tube, 2K/carton MBRF30H90CT - MBRF30H100CT ITO-220AB 45Anti-Static tube, 50/tube, 2K/carton 3113” reel, 800/reel, 4.8K/cartonMBRB30H90CT - MBRB30H100CTTO-263AB45Anti-Static tube, 50/tube, 2K/carton81Anti-Static 13” reel, 800/reel, 4.8K/cartonMBR30H100CT , MBRF30H100CT & MBRB30H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number Ratings andCharacteristic Curves (T A = 25°C unless otherwise noted)100100.10.011.0J u n c t i o n C a p a c i t a n c e (p F )110100100100000.110Reverse Voltage (V)t, Pulse Duration (sec.)I F -- I n s t a n t a n e o u s F o r w a r d C u r r e n t (A )5101520253035Fig. 1 – Forward Derating CurvePer LegA v e r a g e F o r w a r d C u r r e n t (A )Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Per Leg1000。

MBRP30045CT中文资料

元器件交易网
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRP30045CT/D
Preliminary Data Sheet
POWERTAP II SWITCHMODE™ Power Rectifiers
. . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Guaranteed Reverse Avalanche Mechanical Characteristics: • Case: Epoxy, Molded with metal heatsink base • Weight: 80 grams (approximately) • Finish: All External Surfaces Corrosion Resistant • Top Terminal Torque: 25–40 lb–in max 1 • Base Plate Torques: See procedure given in the Package Outline Section 2 • Shipped 25 units per foam • Marking: B30045T, B30060T MAXIMUM RATINGS

MBRS10100CT资料

100
0.70 0.57 0.80 0.65 0.1 6.0 2.0 -65 to +150 -65 to +175 0.85 0.75 0.95 0.85
V mA mA ℃/W ℃ ℃
TSTG
TJ
3. Thermal Resistance from Junction to Case Per Leg.
04.25.2005/rev. a
元器件交易网
RATINGS AND CHARACTERISTIC CURVES (MBRS1035CT THRU MBRS10100CT)
FIG.1- FORWARD CURRENT DERATING CURVE
5.0
180
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case

SBR20100CT中文资料

20A SBRSUPER BARRIER RECTIFIERFeatures• Low Forward Voltage Drop• Excellent High Temperature Stability• Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability• ±10kV ESD Protection Per IEC 61000-4-2 •Lead Free Finish, RoHS Compliant (Note 2)Mechanical Data• Case: TO-220AB, ITO-220AB• Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0• Moisture Sensitivity: Level 1 per J-STD-020D• Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2• Weight: TO-220AB – 2.1 grams (approximate)ITO-220AB – 1.9 grams (approximate)Package Pin Out ConfigurationTO-220ABITO-220ABMaximum Ratings @T A = 25°C unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.CharacteristicSymbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking VoltageV RRM V RWM V RM 100 VRMS Reverse VoltageV R(RMS) 71 V Average Rectified Output Current @ T C = 150ºC I O 20 ANon-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load I FSM 150 APeak Repetitive Reverse Surge Current (2uS-1Khz) I RRM2 AThermal CharacteristicsCharacteristicSymbol Value Unit Maximum Thermal Resistance (per leg) Package = TO-220AB Package = ITO-220ABR θJC 2 4ºC/W Operating and Storage Temperature Range T J , T STG-65 to +175ºCElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristicSymbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 1) V (BR)R 100 - - V I R = 0.1mAForward Voltage Drop V F - - 0.67 0.82 0.75 VI F = 10A, T J = 25ºCI F = 10A, T J = 125ºCLeakage Current (Note 1)I R- - 0.1 10 mAV R = 100V, T J = 25ºCV R = 100V, T J = 125ºCNotes: 1. Short duration pulse test used to minimize self-heating effect.2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.255075100125150175T C , CASE TEMPERATURE (°C)I F (A V E ), A V E R A G E F O R W A R D C U R R E N T (A )0.10.100.200.300.400.500.600.700.800.90V , INSTANTANEOUS FORWARD VOLTAGE (V)I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )Figure 1: Current Derating Curve, Per ElementFigure 2: Typical Forward Characteristics, Per Element0.0010.010.111010020406080100V , INSTANTANEOUS REVERSE VOLTAGE (V)I , I N S T A N T A N E O U S R E V E R S E C U R R E N T (m A )Figure 3: Typical Reverse Characteristics, Per ElementOrdering Information (Note 3)Part Number Case PackagingSBR20100CT TO-220AB 50 pieces/tubeSBR20100CTFP ITO-220AB 50 pieces/tubeNotes:3. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationSBR20100CTFP = Product Type Marking CodeAB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year, ex: 06 = 2006 WW = Week (01-52)SBR20100CT = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code Marking YY = Last two digits of year, ex: 06 = 2006 WW = Week (01-52)Package Outline DimensionsTO-220ABDim Min Typ MaxA 3.56 - 4.82 A1 0.51 - 1.39 A2 2.04 - 2.92 b 0.39 0.81 1.01 c 0.356 - 0.61 D 14.22 - 16.51D1 8.39 - 9.01e 2.54 e1 5.08E 9.66 - 10.66H1 5.85 - 6.85L 12.70 - 14.73L1 - - 6.35 P 3.54 - 4.08 Q 2.54 - 3.42 All Dimensions in mmITO-220AB (Note 4)Dim Min Typ Max A 4.50 4.70 4.90A1 3.04 3.243.44A2 2.56 2.762.96b 0.500.600.75b1 1.10 1.20 1.35c 0.500.600.70D 15.6715.8716.07D1 8.999.199.39e 2.54E 9.9110.1110.31L 9.459.7510.05L1 15.8016.0016.20P 2.98 3.18 3.38Q 3.10 3.30 3.50All Dimensions in mmITO-220AB ALTERNATE (Note 4)DIM. MIN. MAX. A 4.30 4.70 A1 1.3 b 0.50 0.75 b1 1.10 1.35 b2 1.50 1.75 c 0.50 0.75 D 14.80 15.20 E 9.96 10.36 e 2.54 typ F 2.80 3.20 J1 2.50 2.90 L 12.80 13.60 L1 1.70 1.90 L2 1.90 2.10 ØP 3.50 typ Q 2.70 typ All Dimensions in mmNotes:4. For product manufactured with Date Code 0733 (week 33, 2007) and newer, please refer to ITO-220AB dimensions. For product manufactured prior to Date Code 0733, please refer to ITO-220AB ALTERNATE dimensions.IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。

MBR30200CT台湾耐美肖特基三极管

MBR30200CT
Features
• • • • • • • • • •
Schottky Barrier Diodes 30 A Total (15A Per Diode Leg) Guard Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V 0 @ 0.125 in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction Pb Free Packages are Available*
260°C Max. for 10 Seconds
D
Leads are Readily Solderable
Symbol
A
Dimensions In Millimeters
O
F
I
c1 h
E1 E b1 b L L1
A1
e e1
A A1 b b1 c c1 D E E1 e e1 F h L L1 Φ
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C)
Symbol VRRM IF(AV) IFRM vF IFSM IRRM TJ dv/dt
IR
MBR 30200CT 200 15 30 0.95
NUMBER OF CY CLES AT 6 0HZ
Fig.4 Max Non- Repetitive Surge Current

MBR20H200CT中文资料

Features• Plastic package has Underwriters Laboratory Flammability Classification 94V-0• Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conductionPlated leads, solderable per As marked Mounting Position: Any 10 in-lbs maximum MBR20H200CT , MBRF20H200CT & MBRB20H200CT-1 SeriesVishay Semiconductorsformerly General SemiconductorDocument Number New ProductReverse Voltage 200V Forward Current 20AMax. Junction Temperature 175°CPIN 1PIN 3TO-220AB (MBR20H200CT)TO-262AA (MBRB20H200CT-1)Maximum Ratings (TC= 25°C unless otherwise noted)ParameterSymbol MBR20H200CT MBRF20H200CT MBRB20H200CT-1Unit Maximum repetitive peak reverse voltage V RRM 200V Working peak reverse voltage V RWM 200V Maximum DC blocking voltageV DC 200V Maximum average forward rectified current Total device 20(Fig. 1)Per leg I F(AV)10A Peak forward surge current8.3ms single half sine-wave superimposed I FSM 290A on rated load (JEDEC Method) per legPeak repetitive reverse current per leg at t p = 2µs, 1KH Z I RRM 1.0A Peak non-repetitive reverse surge energy E RSM 20mJ (8/20µs waveform)Non-repetitive avalanche energy per leg at 25°C, E AS = 2.0A, L=10mHE AS 20mJ Electrostatic discharge capacitor voltage Human body model: C = 100pF, R = 1.5K ΩV C 25KV Voltage rate of change (rated V R )dv/dt 10,000V/µs Operating junction and storage temperature range T J , T STG –65 to +175°C RMS Isolation voltage (MBRF type only) from terminals 4500(1)to heatsink with t = 1 second, RH ≤30%V ISOL3500(2)V1500 (3)Electrical Characteristics (TC= 25°C unless otherwise noted)ParameterSymbolTypical Maximum Unit Maximum instantaneous I F = 10A,T j = 25°C 0.810.88forward voltage per leg at:I F = 10A,T j = 125°C 0.650.75I F = 20A,T j = 25°C V F0.870.97V I F = 20A,T j = 125°C 0.740.85Maximum reverse current per leg T J = 25°C 5.0µA at working peak reverse voltage (4)T J = 125°CI R 1.0mA Typical junction capacitance at 4.0V, 1MHZCJ250pFThermal Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol MBR MBRF MBRB Unit Typical thermal resistance per legR ΘJC2.04.02.0°C/WNotes:(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads does overlap heatsink(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.97”)(4) Pulse test: 300µs pulse width, 1% duty cycleOrdering InformationProduct Case Package CodePackage OptionMBR20H200CT TO-220AB 45Anti-Static tube, 50/tube, 1K/carton MBRF20H200CT TO-200AB 45Anti-Static tube, 50/tube, 1K/carton MBRB20H200CT-1TO-262AA45Anti-Static tube, 50/tube, 1K/cartonMBR20H200CT , MBRF20H200CT & MBRB20H200CT-1 SeriesVishay Semiconductorsformerly General Semiconductor Document Number 88786MBR20H200CT , MBRF20H200CT & MBRB20H200CT-1 SeriesVishay Semiconductorsformerly General SemiconductorDocument Number 0.10.30.20.40.60.8 1.00.50.70.9 1.1100100.110.10.011101001,0000.011100100.1Fig. 3 – Typical Instantaneous Forward CharacteristicsI R -- I n s t a n t an e o u s R e v e r s e C u r r e n t (µA )J u n c t i o n C a p a c i t a n c e (p F )1101001001000100000.110Reverse Voltage (V)102030507010040608090Fig. 4 – Typical ReverseCharacteristicsFig. 6 – Typical Transient Thermal Impedance Per Legt -- Pulse Duration (sec.)Instantaneous Forward Voltage (V)Percent of Rated Peak Reverse Voltage (%)I F -- I n s t a n t a n e o u s F o r w a r d C u r r e n t (A )510152025255075100125150175A v e r a g e F o r w a r d C u r r e n t (A )Case T emperature (°C)0255075100125150175200225250275300325110100A v e r a g e F o r w a r d C u r r e n t (A )Number of Cycles at 60 H ZFig. 5 – Typical Junction CapacitanceFig. 1 – Forward Derating CurveFig. 2 – Maximum Non-Repetitive Peak Forward Surge Current35010,000Ratings andCharacteristic Curves (T A = 25°C unless otherwise noted)。

MBRB20200CT中文资料

ELECTRICAL CHARACTERISTICS (PER LEG)
Maximum Instantaneous Forward Voltage (1) 0.9 0.8 1.0 0.9 1.0 50 Volts
Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C)
Amps Amps Amps Amp °C °C V/µs °C/W
THERMAL CHARACTERISTICS (PER LEG)
Thermal Resistance — Junction to Case RθJC (IF = 10 Amps, TC = 25°C) (IF = 10 Amps, TC = 125°C) (IF = 20 Amps, TC = 25°C) (IF = 20 Amps, TC = 125°C) VF 2.0
150
160
Figure 3. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (AMPS) 20 500
Figure 4. Current Derating, Case
RθJA = 16°C/W RATED VOLTAGE C, CAPACITANCE (pF)
Figure 2. Typical Reverse Current (Per Leg)
SQUARE WAVE
RATED VOLTAGE RθJC = 2°C/W
20
15 SQUARE WAVE 10 dc
5
0
90

MBRF20200CT中文资料

Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 125°C Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz) TC = 90°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) Operating Junction Temperature and Storage Temperature Voltage Rate of Change (Rated VR) Per Leg Per Package Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ, Tstg dv/dt
1
元器件交易网 MBRF20200CT
ELECTRICAL CHARACTERISTICS, PER LEG
Rating Maximum Instantaneous Forward Voltage (1) (iF = 10 Amp, TC = 25°C) (iF = 10 Amp, TC = 125°C) (iF = 20 Amp, TC = 25°C) (iF = 20 Amp, TC = 125°C) Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) Symbol vF 0.9 0.8 1.0 0.9 iR 1.0 50 mA Max Unit Volts

MBR30200CT-ASEMI

如何看产品参数？
【MBR30200CT】代表本产品的完整型号其中【MBR】为本产品的封装方式【30】代表其正向电流为30A 【200】代表其反向耐压为200V 后缀【CT】代表芯片连接方式为共阴连接
END 谢谢大家观看
如何看产品参数？
品牌：A。
DH18：生产批号
中间输出
MBR30200CT 30电流参数：30A 200电压参数：200V CT：封装为TO-220共阴
MBR30200CT 外形尺寸参数
MBR30200CT产品解析
这款整流桥产品是采用了高纯度无氧铜材料，导电性能更佳，引脚加粗设计，宽度达1.01mm，可持续长时间工作不发热。产品表面采用激光打标，永不退色，解决油墨丝印易掉色问题，激光打标生产效率高，订货货期短，解决油墨印字货期长、低效率问题。
开关电源变频器
逆变器
MBR30200CT芯片工艺
这款肖特基产品是采用了俄罗斯Mikron芯片,高抗冲击性能 122MIL的芯片，品质稳定性与参数一致性非常好。 28条台湾健鼎测试线，确保MBR30200CT的高可靠性，确保产品通过先进的生产工艺制作与严苛的电性监测，保障每一颗出厂产品都能让客户放心。
MBR30200CT包装方式
它的包装方式为：一箱5000pcs，共5盒；每盒1000pcs，共20管，单管50pcs。
MBR30200CT 应用领域
MBR30200CT肖特基二极管广泛应用于开关电源、变频器、驱动器等电路，作高频、低压、大电流整流二极管、续流二极管、保护二极管使用，或在微波通信等电路中作整流二极管、小信号检波二极管使用。
ASEMI课堂产品介绍之MBR30200CT
MBR30200CT

MBR1545CT中文资料

Tj = 25°C f = 1 MHZ VSIG = 50mV p–p
1000
100 0.1
15344
1.0
10
100
VR – Reverse Voltage ( V )
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
Rev. A2, 24-Jun-98
15343
10
Tj = 150°C
1.0
Tj = 125°C
0.1
0.01
Tj = 75°C Tj = 25°C
10 Number of Cycles at 60 Hz
100
15345
0.001 0
20
40
60
80
100 120 140
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
4000 C D – Diode Capacitance ( pF )
Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
3 (5)
元器件交易网
MBR1530CT–MBR1560CT
Vishay Lite–On Power Semiconductor Dimensions in mm
14468
Case: molded plastic Polarity: as marked on body Approx. weight: 2.24 grams Mounting position: any Marking: type number

MBRB20100CTG中文资料

MBRB20100CTPreferred Device SWITCHMODE tPower RectifierD2PAK Surface Mount Power PackageThe D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.Features•Package Designed for Power Surface Mount Applications •Center−T ap Configuration•Guardring for Stress Protection•Low Forward V oltage•175°C Operating Junction Temperature•Epoxy Meets UL 94 V−0 @ 0.125 in•Short Heat Sink Tab Manufactured − Not Sheared!•Similar in Size to Industry Standard TO−220 Package•Pb−Free Packages are AvailableMechanical Characteristics•Case: Epoxy, Molded, Epoxy Meets UL 94 V−0•Weight: 1.7 Grams (Approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds•Device Meets MSL1 Requirements•ESD Ratings:Machine Model, C >400 VHuman Body Model, 3B >8000 VMAXIMUM RATINGS (Per Leg)Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.The heat generated must be less than the thermal conductivity fromJunction−to−Ambient: dP D/dT J < 1/R q JA.D2PAKCASE 418BSTYLE 3341SCHOTTKY BARRIERRECTIFIER20 AMPERES100 VOLTS13Preferred devices are recommended choices for future use and best overall value.MARKING DIAGRAMAY WWB20100GAKASee detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONA= Assembly LocationY= YearWW= Work WeekB20100= Device CodeG= Pb−Free PackageAKA= Diode PolarityELECTRICAL CHARACTERISTICS (Per Leg)3.Pulse Test: Pulse Width = 300 m s, Duty Cycle ≤2.0%.ORDERING INFORMATIONSpecifications Brochure, BRD8011/D.Figure 3. Typical Current Derating, Case, Per Leg i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )AVERAGE CURRENT (AMPS)T C , CASE TEMPERATURE (°C)I F (A V ), A V E R A G E F O R W A R D C U R R E N T (A M P S )Figure 4. Average Power Dissipation & Average CurrentPACKAGE DIMENSIONSD 2PAK CASE 418B−04ISSUE Jǒmm inchesǓSOLDERING FOOTPRINT**For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.STYLE 3:PIN 1.ANODE2.CATHODE3.ANODE4.CATHODEVARIABLEVIEW W−WVIEW W−WVIEW W−W123SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

KOCH-MBR-技术手册

膜分离前在生化池中的停留时间至少不能低于 40 分钟。平均水力停留时间不能低于 4 小时。另外，应确保通过整体的设计，平均水力停留时间的偏差不应超过 15％。提醒注意的是，这个原则适用的是普通生活污水。当有部分或全部为工业废水时，应另行考虑。 2）所有的膜组件应能平均接触原水，这样就保证了每个膜组件具有相同的操作条件、相同的污泥浓度以及相同的污泥负荷； 3）由于膜丝仅在底端固定，因此液体要顺应膜组件的方向在任何时候都应该是向上运行的，向上流的流速不能低于 2mm/s； 4）反洗系统应能实现每隔 240－600 秒（因具体工程而异）自动反洗一次，反洗的时间为 20－25 秒，最大不超过 40 秒。反洗的间隔和反洗时间应是可调的。 5）由于透过液的负压系统，一般会有气体在系统中形成。为了确保透过液中气体的消除，应在透过液系统的最高点设置合适的管道除气系统（Deaeration）。 6） PURON 膜丝是一端固定的，当产水通量较低时，膜丝中可能会有一定的空气存在，为此，系统要进行一天一次的大通量的膜丝抽气（Degassing）过程。
参数mbr传统工艺产水tssmg1015产水codmg304050沉淀后p总mg氧化池中的mlss含量kochchemicaltechnologygroupllccompany膜件特性参数特性参数性能指标技术类型超滤uf公称膜孔径005膜材料结构加筋pes膜丝内径外径12mm26mm过滤方向外进内出膜表面特性框架尺寸长宽高19819802800mm有效膜丝长度1800mm有效膜面积500m2产水母管直径dn80曝气管接口尺寸dn50膜件总重干400kg空气母管膜件排列空气分布管纤维护栏产水母管一端密封膜丝组件框架puronkochchemicaltechnologygroupllccompany表2500m2标准膜件运行参数特性参数指标ph适用范围312最高使用温度40运行压力05bar01bar反洗压力05bar三

厦门鲲扬膜科技有限公司MBR膜及产品介绍课件

进水浊度低于3NTU，通量50LMH 进水浊度1-3NTU，通量30LMH 用于料液过滤，前道工序需预处理（离心，砂滤，板框过滤等），通量5-12LMH
水洗 NaClO 1000-2000ppm 1小时（废水）膜清洗剂（料液）气洗
清洗条件
水洗 NaClO 1000-2000ppm 1小时（废水）膜清洗剂（料液）气洗
第二章.膜产品介绍
柱式膜——操作参数
4040 流量小于4m3/h，压力低于3Bar 温度低于50度 8050常温型流量小于20m3/h ，压力低于3Bar 温度低于50度 8050高温型流量小于20m3/h ，压力低于3Bar 温度低于80度
第二章.膜产品介绍
柱式膜——使用条件
使用条件和设计通量
西安建筑科技大学
上海问鼎环保
同济大学
闽南师范大学
浙江医药高专
2
公司B
废水
广州海纳
4
公司B
广州海纳
5
公司B
上海泰克比亚
1
公司B
广州海纳
6
公司B
韩国东国环境
1
公司B
山东大学环境系
2
科研
成都新塘环保
1
公司B
乌鲁木齐鸿安润诚
1
公司B
云南七冠科技
5
公司B
自来水
Metiska Farma
1
公司B
山东大学环境系
3
科研
陕西立佳工程
1
公司B
山东大学环境系
通化诺泽生物
1
公司A
中药分级过滤
厦门天泉鑫
1
公司B
玉米废水
华中师范大学化学学院