RM14-K-12P-SS中文资料

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RM12中文资料

RM12中文资料

RM1200E THRU RM2000E500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 VoltsFeatures• Low Cost • Low Leakage• Low Forward Voltage Drop • High Current Capability • High VoltageMaximum Ratings• Operating Temperature: -55°C to +150°C •Storage Temperature: -55°C to +150°CMCC Catalog Number Device Marking Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage RM1200E 1200V 840V 1200V RM1500E 1500V 1050V 1500V RM1800E 1800V 1260V 1800V RM2000E2000V1400V 2000VElectrical Characteristics @ 25°C Unless Otherwise SpecifiedAverage Forward CurrentI F(AV)500mA T A = 50°C Peak Forward Surge Current I FSM30A8.3ms, half sineMaximum Instantaneous Forward VoltageRM1200E-RM1800ERM2000EV F 2.0V 3.0V I FM = 0.5A;T A = 50°C Maximum DCReverse Current At Rated DC Blocking VoltageI R 5.0µA 50µA T A = 25°C T A = 100°C Typical Junction CapacitanceC J30pFMeasured at1.0MHz, V R =4.0Vomp onents 20736 Marilla Street Chatsworth! "# $ % ! "#Micro Commercial ComponentsxCase Material: Molded Plastic. UL Flammability Classification Rating 94V-0www.mccsemi .comRM12RM15RM18RM20RM1200E - RM2000E110040510158Figure 3Peak Forward Surge Current Peak Forward Surge Current - Amperes versus Number Of Cycles At 60Hz - CyclesAmpsCycles261020608040202530Instantaneous Reverse Current - Micro Amps versus Percent Of Rated Peak Reverse Voltage - VoltsFigure 1Typical Reverse Characteristics 012020406080.01.02.04.06T J = 25°CµAVolts100.08.1.2.4.6.8124Average Forward Rectified Current - Amperes versus Ambient Temperature - °CFigure 2Forward Derating Curve150255075100100200300Single Phase, Half Wave60Hz Resistive or Inductive Load mA°C125400500600TMMicro Commercial Componentswww.mccsemi .comMicro Commercial Components***IMPORTANT NOTICE***Micro Commercial Components Corp.reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes .Micro Commercial Components Corp.does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,northe rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp.and all the companies whoseproducts are represented on our website, harmless against all damages.***APPLICATIONS DISCLAIMER***Products offer by Micro Commercial Components Corp.are not intended for use in Medical,Aerospace or Military Applications.。

GMW14400 2012 中文翻译版

GMW14400 2012 中文翻译版

Pre-Coated or Uncoated Low Carbon, Heat-Treatable Boron Steel预镀层或无镀层低碳可热处理硼钢1 Scope适用范围This specification covers the requirements for low carbon, heat-treatable boron steel used in the manufacture of structural parts to manage very high tensile loads without significant deformation such as required in safety and occupant protection.本规范涵盖了用于结构零件的低碳可热处理硼钢的要求,而这些零件应具有安全性和乘员保护性能,要求在没有明显变形的情况下,具有很高的强度。

This material is heat treated and then formed and simultaneously quenched in a water cooled die in a process referred to as hot stamping, hot press forming or press hardening.这种材料用于热冲压(或称热成形、压淬成形)工艺,经过加热,然后在水冷模具中成形并淬火。

Material produced by this process generally referred to as press hardened steel(PHS).用于这种工艺的材料一般称作热成形钢(PHS)。

This process results in a part with a microstructure consisting of essentially 100% tempered martensite or martensite with trace amounts of bainite.通过这种工艺得到的零件的金相组织是100%的回火马氏体或者含有极少量贝氏体的马氏体组织。

瑞丰RF-AURK14TS -ED(WE)产品规格书说明书

瑞丰RF-AURK14TS -ED(WE)产品规格书说明书

Date :日期:1-8th Floor, Building #1,10th Industrial Zone, Tian Liao Community, Gong Ming Area, Guang Ming栋一至八楼Web/网址:Features特征 PLCC-2 Package. 垂直型表贴封装 Extremely wide viewing angle. 发光角度大Suitable for all SMT assembly and solder process. 适用于所有的SMT 组装和焊接工艺 Available on tape and reel. 适用于载带及卷轴 Moisture sensitivity level: 3. 防潮等级:3 Package:3000pcs/reel. 包装:3000颗/卷 RoHS compliant. RoHS 认证 Description 描述 The Orange source color devices are made with AlGaInP on Substrate Light Emitting Diode橙光LED 由AlGaInP 四种元素芯片激发而成 Applications 应用 Optical indicator. 光学指示 Indoor display. 室内显示Landscape lighting,lamp belt. 景观照明,灯带等General suitable applications.其他适合的应用 RF-201709070127Package Dimension 封装尺寸 外形尺寸:2.0*1.4*1.3mmNOTES:备注1.All dimensions units are mm. (所有尺寸标注单位为毫米)2.All dimensions tolerances are 0.2mm unless otherwise noted. (除特别标注外,所有尺寸允许公差为±0.2毫米)Electrical / Optical Characteristics at Ts=25°C 电性与光学特性 Absolute Maximum Ratings at Ts=25°C 绝对最大值 Item 项目Symbol 符号test condition 测试条件Value unit 单位 Min. Max. Typ.Forward VoltageRank B1 VfIF=20mA1.8 1.92.1V RankB2 1.9 2.0 V Rank C12.0 2.1 V Rank C2 2.1 2.2 V Rank D1 2.2 2.3 V Rank D2 2.32.4 V Dominant wavelengthRank E00wld IF=20mA600 605 602.5 nm Rank F00 605 610 nm Luminous intensityRank H20 IVIF=20mA180 230 265 mcd Rank I10230 280 mcd Rank I20 280 350 mcd Rank J10350 430 mcd Reverse Current IR VR=5V --- 10 --- uAViewing Angle 2Θ1/2 IF=20mA --- --- 120 Deg Thermal resistanceRth(j-s)IF=20mA------290 ℃/WParameter (参数) Symbol (符号)Rating (值)Units (单位)Power Dissipation (功耗) Pd 48 mW Forward Current (正向电流) IF 20 mA Peak Forward Current (峰值电流) IFP 100 mA Reverse Voltage (反向电压) VR 5 V Electrostatic Discharge(HBM)(静电) ESD 2000 V Operating Temperature (操作温度) Topr -40 ~ +85 ℃ Storage Temperature (储存温度) Tstg -40 ~ +100℃ junction temperature (结温) Tj90℃Note: 1. 1/10 Duty cycle, 0.1ms pulse width. 脉宽0.1ms,周期1/10.2. The above forward voltage measurement allowance tolerance is 0.1V. 以上所示电压测量误差0.1V.3. The above wavelength measurement allowance tolerance is ±1nm. 以上所示波长测量误差±1nm.4. the above luminous flux measurement allowance tolerance ±10%. 上述光通量的测试允许公差为±10%.5. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. 使用功率不能超过规定的最大值.6. All measurements were made under the standardized environment of us. 所有测试都是基于我们现有的标准测试平台.7.When the LEDs are in operation the maximum current should be decided after measuring the package temperature,junction temperature should not exceed the maximum rate.LED使用的最大电流需要根据散热条件确定,结温不能超过最大值Handling Precautions 使用注意事项1>.LED operating environment and sulfur element composition cannot be over 100PPM in the LED mating usage material. This is provided for informational purposes only and is not a warranty or endorsement.LED工作环境及与LED适配的材料中,硫元素及化合物成份不可超过100PPM,单一的溴元素含量要求小于900PPM,单一氯元素含量要求小于900PPM,溴元素与氯元素总含量必须小于1500PPM(检测含量为与LED直接接触面上元素含量)。

BCR12PM-12LG中文资料

BCR12PM-12LG中文资料

BCR12PM-12LGTriacMedium Power UseREJ03G1510-0100Rev.1.00Feb 14, 2007 Features• I T (RMS) : 12 A• V DRM : 600 V• I FGTI, I RGTI, I RGT III : 30 mA • V iso : 2000V • The Product guaranteed maximum junction temperature 150°C• Insulated Type• Planar Type• UL Recognized : Yellow Card No. E223904File No.E80271OutlineApplicationsSwitching mode power supply, light dimmer, electronic switch, hair dryer, Television, Stereo system, refrigerator,Washing machine, infrared kotatsu, and carper, small motor controller, SS relay, solenoid driver, copying machine,electric tool, electric heater control, and other general purpose control applicationsVoltage classParameter Symbol12UnitRepetitive peak off-state voltage Note1V DRM 600 V Non-repetitive peak off-state voltage Note1V DSM 720 VParameter Symbol Ratings Unit ConditionsRMS on-state current I T (RMS) 12 A Commercial frequency, sine full wave360°conduction, Tc = 92°CSurge on-state current I TSM 120 A 60Hz sinewave 1 full cycle, peak value,non-repetitiveI 2t for fusion I 2t 60 A 2s Value corresponding to 1 cycle of halfwave 60Hz, surge on-state currentPeak gate power dissipation P GM 5 W Average gate power dissipation P G (AV) 0.5 W Peak gate voltage V GM 10 V Peak gate current I GM 2 A Junction Temperature Tj –40 to +150 °C Storage temperature Tstg –40 to +150 °C Mass — 2.0 g Typical value Isolation voltage V iso 2000 V Ta = 25°C, AC 1 minute,T 1 • T 2 • G terminal to caseNotes: 1. Gate open.Electrical CharacteristicsParameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I DRM — — 2.0 mA Tj = 150°C, V DRM applied On-state voltage V TM — — 1.6 V Tc = 25°C, I TM = 20 A,instantaneous measurementΙV FGT Ι — — 1.5V ΙΙ V RGT Ι — — 1.5 V Gate trigger voltage Note2ΙΙΙ V RGT ΙΙΙ — — 1.5 VTj = 25°C, V D = 6 V, R L = 6 Ω,R G = 330 Ω Ι I FGT Ι — — 30 mA ΙΙ I RGT Ι — — 30 mAGate trigger curent Note2ΙΙΙI RGT ΙΙΙ — — 30 mATj = 25°C, V D = 6 V, R L = 6 Ω, R G = 330 Ω Gate non-trigger voltageV GD 0.2/0.1 — — V Tj = 125°C/150°C, V D = 1/2 V DRM Thermal resistanceR th (j-c) — — 4.0 °C/W Junction to case Note3 Critical-rate of rise of off-statecommutation voltageNote4(dv/dt)c 10/1 —— V/µs Tj = 125°C/150°CNotes: 2. Measurement using the gate trigger characteristics measurement circuit.3. The contact thermal resistance R th (j-c) in case of greasing is 0.5°C/W.4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.Performance CurvesPackage DimensionsOrder CodeLead form Standard packing Quantity Standard order code Standard order code exampleStraight type Vinyl sack 100Type name BCR12PM-12LG Lead form Plastic Magazine (Tube) 50Type name – Lead forming code BCR12PM-12LG-A8 Note : Please confirm the specification about the shipping in detail.Refer to "/en/network " for the latest and detailed information.Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900Renesas Technology (Shanghai) Co., Ltd.Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145Renesas Technology Malaysia Sdn. BhdUnit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510RENESAS SALES OFFICES。

烙克赛克产品索引(中文版)

烙克赛克产品索引(中文版)

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KT4-1 温控表中文说明CN

KT4-1 温控表中文说明CN

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G12KP;G18KP;G22KP;G12KP-YA;G23KP;中文规格书,Datasheet资料

G12KP;G18KP;G22KP;G12KP-YA;G23KP;中文规格书,Datasheet资料

B28I n d i c a t o r sA c c e s s o r i e sS u p p l e m e n tT a c t i l e sK e y l o c k sR o t a r i e sP u s h b u t t o n s I l l u m i n a t e d P BS l i d e sP r o g r a m m a b l eT o u c hT i l tT o g g l e sGeneral SpecificationsElectrical Capacity (Resistive Load)Logic Level: 0.4VA maximum @ 28V AC/DC maximum(Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V)Note: Find additional explanation of operating range in Supplement section.Other RatingsContact Resistance: 80 milliohms maximumInsulation Resistance: 500 megohms minimum @ 500V DCDielectric Strength: 500V AC minimum for 1 minute minimumMechanical Life:100,000 operations minimum for On-None-On & On-Off-On50,000 operations minimum for other circuitsElectrical Life:100,000 operations minimum for On-None-On & On-Off-On50,000 operations minimum for other circuits Nominal Operating Force:.81N for momentary & 1.06N for maintainedAngle of Throw: 28°Materials & FinishesActuator:Glass fiber reinforced polyamide Case:Glass fiber reinforced polyamide Sealing Rings: Nitrile butadiene rubberMovable Contact: Phosphor bronze with gold plating Stationary Contacts:Phosphor bronze with gold plating Base: Glass fiber reinforced polyamideTerminals: Phosphor bronze with gold platingEnvironmental DataOperating Temperature Range: –25°C through +85°C (–13°F through +185°F)Humidity: 90 ~ 95% humidity for 96 hours @ 40°C (104°F)Vibration: 10 ~ 55Hz with peak-to-peak amplitude of 1.5mm traversing the frequency range & returning in 1 minute; 3 right angled directions for 2 hoursShock:50G (490m/s 2) acceleration (tested in 6 right angled directions, with 5 shocks in each direction)InstallationCap Installation Force: 39.1N (8.8 lbf) maximum downward force on actuatorPCB ProcessingSoldering:Wave Soldering Recommended: See Profile A in Supplement section.Manual Soldering: See Profile A in Supplement section.Cleaning: Automated cleaning. See Cleaning specifications in Supplement section.Standards & CertificationsThe G Series rockers have not been tested for UL recognition or CSA certification. These switches are designed for use in a low-voltage, low-current, logic-level circuit.When used as intended in a logic-level circuit, the results do not produce hazardous energy./ B29I n d i c a t o r s A c c e s s o r i e s S u p p l e m e n t T a c t i l e s K e y l o c k s R o t a r i e s P u s h b u t t o n s I l l u m i n a t e d P B S l i d e s P r o g r a m m a b l e T o g g l esT o u c h T i lt Distinctive CharacteristicsActual SizeUltra-miniature size allows high density mounting, and extremely light weight of 0.25 gram makes these switches ideal for handheld equipment.Totally sealed body construction prevents contact contamination and allows time-and money-saving automated soldering and cleaning.Award-winning STC contact mechanism with benefits unavailable in conventional mech- anisms: smoother, positive detent actuation, increased contact stability and unparalleled logic-level reliability. (Additional STC details in Terms & Acronyms; see Supplement section.).100” x .100” (2.54mm x 2.54mm) terminal spacing conforms to standard PC board grid spacing. Round terminals facilitate easier through-hole mounting on PC boards.Matching indicators available./B30I n d i c a t o r sA c c e s s o r i e sS u p p l e m e n tT a c t i l e s K e y l o c k sR o t a r i e sP u s h b u t t o n sI l l u m i n a t e d P B S l i d e sP r o g r a m m a b l eT o u c h T i l tT o g g l e sTYPICAL SWITCH ORDERING EXAMPLEStraight PC TerminalsDPDTON-NONE-ON CircuitSnap Topwith Black Rocker / B31I n d i c a t o r sA c c e s s o r i e sS u p p l e m e n t T a c t i l e sK e y l o c k s R o t a r i e s P u s h b u t t o n s I l l u m i n a t e d P B S l i d e sP r o g r a m m a b l e T o g g l esT o u c h T i l t ACTUATORSnap Top for RockerKPC TERMINALSStraightP.016Color Codes:Material: Polyamide Finish: MatteColors Available: A, B, CBlack White RedA BCROCKER CAP & COLORSAT4062 RockerYTYPICAL SWITCH DIMENSIONSActual SizeSingle & Double PoleStraight PCOn single pole models positions 1 & 3 are support pins. G23KP-YA.024.024/分销商库存信息:NKK-SWITCHG12KP G18KP G22KPG12KP-YA G23KP G22KP-YA G15KP-YC G18KP-YA G28KP-YC G23KP-YA G23KP-YB G28KPG28KP-YA G23KP-YC。

常用场效应管参数大全

常用场效应管参数大全

常用场效应管参数大全型号材料管脚用途参数3DJ 6NJ 低频放大20V0.35MA0.1W4405/R95242E3C NMOS GDS 开关600V11A150W0.362SJ117 PMOS GDS 音频功放开关400V2A40W2SJ118 PMOS GDS 高速功放开关140V8A100W50/70nS0.52SJ122 PMOS GDS 高速功放开关60V10A50W60/100nS0.152SJ136 PMOS GDS 高速功放开关60V12A40W 70/165nS0.32SJ143 PMOS GDS 功放开关60V16A35W90/180nS0.0352SJ172 PMOS GDS 激励60V10A40W73/275nS0.182SJ175 PMOS GDS 激励60V10A25W73/275nS0.182SJ177 PMOS GDS 激励60V20A35W140/580nS0.0852SJ201 PMOS n2SJ306 PMOS GDS 激励60V14A40W30/120nS0.122SJ312 PMOS GDS 激励60V14A40W30/120nS0.122SK30 NJ SDG 低放音频50V0.5mA0.1W0.5dB2SK30A NJ SDG 低放低噪音频50V0.3-6.5mA0.1W0.5dB2SK108 NJ SGD 音频激励开关50V1-12mA0.3W70 1DB2SK118 NJ SGD 音频话筒放大50V0.01A0.1W0.5dB2SK168 NJ GSD 高频放大30V0.01A0.2W100MHz1.7dB2SK192 NJ DSG 高频低噪放大18V12-24mA0.2W100MHz1.8dB 2SK193 NJ GSD 高频低噪放大20V0.5-8mA0.25W100MHz3dB2SK214 NMOS GSD 高频高速开关160V0.5A30W2SK241 NMOS DSG 高频放大20V0.03A0.2W100MHz1.7dB2SK304 NJ GSD 音频功放30V0.6-12mA0.15W2SK385 NMOS GDS 高速开关400V10A120W100/140nS0.62SK386 NMOS GDS 高速开关450V10A120W100/140nS0.72SK413 NMOS GDS 高速功放开关140V8A100W0.5 (2SJ118) 2SK423 NMOS SDG 高速开关100V0.5A0.9W4.52SK428 NMOS GDS 高速开关60V10A50W45/65NS0.152SK447 NMOS SDG 高速低噪开关250V15A150W0.24可驱电机2SK511 NMOS SDG 高速功放开关250V0.3A8W5.02SK534 NMOS GDS 高速开关800V5A100W4.02SK539 NMOS GDS 开关900V5A150W2.52SK560 NMOS GDS 高速开关500V15A100W0.42SK623 NMOS GDS 高速开关250V20A120W0.152SK727 NMOS GDS 电源开关900V5A125W110/420nS2.52SK734 NMOS GDS 电源开关450V15A150W160/250nS0.522SK785 NMOS GDS 电源开关500V20A150W105/240nS0.42SK787 NMOS GDS 高速开关900V8A150W95/240nS1.62SK790 NMOS GDS 高速功放开关500V15A150W0.4 可驱电机2SK791 NMOS GDS 电源功放开关850V3A100W4.5 可驱电机2SK794 NMOS GDS 电源开关900V5A150W2.5 可驱电机2SK817 NMOS GDS 电源开关60V26A35W40/230nS0.0552SK832 NMOS GDS 高速开关900V4A85W55/100nS4.02SK899 NMOS GDS 功放开关500V18A125W130/440nS0.33 2SK962 NMOS GDS 电源开关900V8A150W280/460nS2.02SK940 NMOS SDG 激励.驱动60V0.8A0.9W0.55螺线管驱动2SK1007 NMOS GDS 功放开关450V5A60W60/130nS1.62SK1010 NMOS GDS 高速开关500V6A80W70/130nS1.62SK1011 NMOS GDS 高速开关450V10A100W110/240nS0.65 2SK1012 NMOS GDS 高速开关500V10A100W110/240nS0.9 2SK1015 NMOS GDS 功放开关450V18A125W170/230nS0.45 2SK1016 NMOS GDS 电源开关500V15A125W170/230nS0.55 2SK1017 NMOS GDS 电源开关500V20A150W250/490nS0.35 2SK1019 NMOS GDS 电源开关450V35A300W360/900nS0.2 2SK1020 NMOS GDS 电源开关500V30A300W360/900nS0.25 2SK1060 NMOS GDS 功放开关100V5A20W50/140nS0.272SK1081 NMOS GDS 激励,驱动800V7A125W 145/250nS2.2 2SK1082 NMOS GDS 激励,驱动900V8A125W 145/250nS2.8 2SK1094 NMOS GDS 激励,驱动60V15A25W80/300nS0.065 2SK1101 NMOS GDS 功放开关450V10A50W165/360nS0.65 2SK1117 NMOS GDS 电源开关600V6A100W1.252SK1118 NMOS GDS 电源开关600V6A45W65/105nSD1.25 2SK1119 NMOS GDS 电源开关1000V4A100W3.82SK1120 NMOS GDS 电源开关1000V8A150W1.82SK1161 NMOS GDS 电源开关450V10A100W75/135nS0.82SK1170 NMOS GDS 电源开关500V20A120W147/290nS0.27 2SK1180 NMOS GDS 投影机用500V10A85W60/40nS0.62SK1195 NMOS GDS 电梯用230V1.5A10W37/100nS2SK1198 NMOS GDS 高速开关700V2A35W20/80nS3.22SK1217 NMOS GDS 电源开关90V8A100W280/460nS2.02SK1221 NMOS GDS 电源开关250V10A80W60/150nS0.42SK1247 NMOS GDS 电源开关500V5A30W50/90nS1.42SK1250 NMOS GDS 开关-感性500V20A150W130/260nS0.35 2SK1254 NMOS GDS 低噪放大120V3A20W25/195nS0.42SK1271 NMOS GDS 功放开关1400V5A240W55/260nS4.02SK1272 NMOS GDS 高速开关60V1A0.75W50/500nS0.652SK1329 NMOS GDS 电源开关500V12A60W90/180nS0.62SK1358 NMOS GDS 电源开关900V9A150W65/120nS1.42SK1374 NMOS 贴片50V50mA0.15W0.2US/0.2US502SK1379 NMOS GDS 激励, 开关60V50A150W78/640nS0.017 2SK1387 NMOS GDS 激励, 开关60V35A40W66/500nS0.035 2SK1388 NMOS GDS 激励, 开关30V35A60W125/480nS0.022 2SK1419 NMOS GDS 高速开关60V15A25W55/150nS0.082SK1445 NMOS GDS 高速开关450V5A30W45/175nS1.42SK1459 NMOS GDS 高速开关900V2.5A30W40/160nS6.02SK1460 NMOS GDS 高速开关900V3.5A40W50/265nS3.62SK1463 NMOS GDS 高速开关900V4.5A60W50/265nS3.62SK1482 NMOS GDS 开关功放低噪30V1.5A0.75W65/660nS4.5 2SK1507 NMOS GDS 高速开关600V9A50W110/240nS1.02SK1535 NMOS GDS 通用900V3A30W45/110nS5.02SK1537 NMOS GDS 通用900V5A100W65/145nS3.02SK1540 NMOS GDS 变频开关功放450V7A60W70/135nS0.82SK1544 NMOS GDS 变频开关功放500V25A200W240/590S0.2 2SK1547 NMOS GDS 开关800V4A40W95/170nS4.52SK1567 NMOS GDS 电源开关500V7A35W70/135nS0.92SK1611 NMOS GDS 电源开关800V3A50W40/135nS4.02SK1681 NMOS GDS 电源开关500V30A300W180/320nS0.352SK1745 NMOS GDS 激励, 开关500V18A150W120/210nS0.36 2SK1794 NMOS GDS 电源激励开关900V6A100W50/105nS2.8 2SK1796 NMOS GDS 功放开关900V10A150W90/230nS1.22SK1850 NMOS GDS 开关电机驱动60V10A1.8W110/360nS0.07 2SK1916 NMOS GDS 开关电源用450V18A80W170/33nS0.452SK1937 NMOS GDS 开关UPS用500V15A125W100/230nS0.48 2SK1985 NMOS GDS 开关UPS用900V5A50W35/105nS2.82SK2039 NMOS GDS 电源开关900V5A150W 70/210nS2.52SK2040 NMOS GDS 电源开关600V2A20W 11/45nS52SK2082 NMOS GDS 开关UPS用900V9A150W 85/210nS1.40 2SK2101 NMOS GDS 电源开关800V6A50W 50/130nS2.12SK2141 NMOS GDS 传动驱动600V6A35W 30/880nS1.12SK2147 NMOS GDS 开关UPS用900V6A80W 145/250nS2.8 2SK2161 NMOS SDG 高速开关200V9A25W 27/255nS0.452SK2189 NMOS GDS 高速开关500V10A70W 70/400nS1.02SK2485 NMOS GDS 监视器用电源900V6A100W 30/85 nS 2.80 2SK2487 NMOS GDS 监视器用电源900V8A140W 50/153nS1.1 2SK2611 NMOS GDS 监视器用电源900V9A150W2SK2645 NMOS GDS 监视器用电源500V15A125W2SK4847 NMOS GDS 电源开关100V36125W0.083SK103 NMOS gGDS 高频放大15V0.02A0.2W900MHz3SK122 NMOS gGDS 高频放大20V7-25mA0.2W200MHz1.2dB BS170 NMOS 60V0.3A0.63W12/12nS5.0BUZ11A NMOS GDS 开关50V25A75W60/110nS0.055BUZ20 NMOS GDS 功放开关100V12A75W75/80nSFS3KM NMOS GDS 高速开关500V3A30W23/60nS4.4FS5KM NMOS GDS 高速开关900V3A53W50/190nS4.FS7KM NMOS GDS 高速开关900V5A50W35/105nS2.8FS10KM NMOS GDS 高速开关FS12KM NMOS GDS 高速开关250V12A35W53/120nS0.40FS7SM-16 NMOS GDS 高速开关800V7A150W1.6H120N60 NMOS GDS 开关600V120AIRF130(铁)NMOS GDS 功放开关100V14A79W75/45nS0.16IRF250(铁)NMOS GDS 功放开关200V9A75W50/40nS0.4 IRF440(铁)NMOS GDS 功放开关500V8A125W35/30nS0.85 IRF450(铁)NMOS GDS 功放开关500V13A125W66/60nS0.4 IRF460(铁)NMOS GDS 功放开关500V13A125W66/60nS0.4 IRF530 NMOS GDS 功放开关100V14A79W51/36nS0.18 IRF540 NMOS GDS 功放开关100V28A150W110/75nS0.077 IRF541 NMOS GDS 功放开关80V28A150W110/75nS0.077 IRF610 NMOS GDS 功放开关200V3.3A43W26/13nS1.5 IRF630 NMOS GDS 功放开关200V9A75W50/40nS0.4IRF640 NMOS GDS 功放开关200V18A125W77/54nS0.18 IRF720 NMOS GDS 功放开关400V3.3A50W21/20nS1.8 IRF730 NMOS GDS 功放开关400V5.5A75W29/24nS1.0 IRF740 NMOS GDS 功放开关400V10A125W41/36nS0.55 IRF830 NMOS GDS 功放开关500V4.5A75W23/23nS1.5 IRF840 NMOS GDS 功放开关500V8A125W35/33nS0.85 IRF9530 PMOS GDS 功放开关100V12A75W140/140nS0.4 IRF9531 PMOS GDS 功放开关60V12A75W140/140S0.3 IRF9541 PMOS GDS 功放开关60V19A125W140/141nS0.2 IRF9610 PMOS GDS 功放开关200V1A20W25/15nS2.3IRF9630 PMOS GDS 功放开关200V6.5A75W100/80nS0.8 IRFS9630 PMOS GDS 功放开关200V6.5A75W100/80nS0.8IRFBC30 NMOS GDS 功放开关600V3.6A74W20/21nS2.2 IRFBC40 NMOS GDS 功放开关600V6.2A125W27/30nS1.2 IRFBE30 NMOS GDS 功放开关800V2.8A75W15/30nS3.5 IRFD120 NMOS 功放开关100V1.3A1W70/70nS0.3IRFD123 NMOS 功放开关80V1.1A1W70/70nS0.3IRFI730 NMOS GDS 功放开关400V4A32W1.0IRFI744 NMOS GDS 功放开关400V4A32W1.0IRFP054 NMOS GDS 功放开关60V65A180W0.022IRFP140 NMOS GDS 功放开关100V29150W0.85IRFP150 NMOS GDS 功放开关100V40A180W210/140nS0.55 IRFP240 NMOS GDS 功放开关200V19A150W0.18IRFP250 NMOS GDS 功放开关200V33A180W180/120nS0.08 IRFP340 NMOS GDS 功放开关400V10A150W0.55IRFP350 NMOS GDS 功放开关400V16A180W77/71nS0.3 IRFP353 NMOS GDS 功放开关350V14A180W77/71XnS0.4 IRFP360 NMOS GDS 功放开关400V23A250W140/99nS0.2 IRFP440 NMOS GDS 功放开关500V8.1A150W0.85IRFP450 NMOS GDS 功放开关500V14A180W66/60nS0.4 IRFP460 NMOS GDS 功放开关500V20A250W120/98nS0.27 IRFP9140 PMOS GDS 功放开关100V19A150W100/70nS0.2 IRFP9150 PMOS GDS 功放开关100V25A150W160/70nS0.2IRFPF40 NMOS GDS 功放开关900V4.7A150W2.5IRFPG42 NMOS GDS 功放开关1000V3.9A150W4.2IRFPZ44 NMOS GDS 功放开关1000V3.9A150W4.2 ******* IRFU020 NMOS GDS 功放开关50V15A42W83/39nS0.1IXGH20N60ANMOS GDS 600V20A150WIXGFH26N50NMOS GDS 500V26A300W0.3IXGH30N60ANMOS GDS 600V30A200WIXGH60N60ANMOS GDS 600V60A250WIXTP2P50 PMOS GDS 功放开关500V2A75W5.5 代J117J177 PMOS SDG 开关30V1.5mA0.35WM75N06 NMOS GDS 音频功放开关60V75A120WMTH8N100 NMOS GDS 功放开关1000V8A180W175/180nS1.8 MTH10N80 NMOS GDS 功放开关800V10A150WMTM30N50 NMOS 功放开关(铁)500V30A250WMTM55N10 NMOS GDS 功放开关(铁)100V55A250W350/400nS0.04MTP27N10 NMOS GDS 功放开关100V27A125W0.05MTP2955 PMOS GDS 功放开关60V12A75W75/50nS0.3MTP3055 NMOS GDS 功放开关60V12A75W75/50nS0.3MTP40N06 NMOS GDS 功放开关(双)60V40A150W/70nS0.3 MTW20N50 NMOS GDS 功放开关500V20A250W0.27RFP50N02 NMOS GDS 功放开关50V20ARFP50N05 NMOS GDS 功放开关50V50A132W55/15nS0.022 RFP50N06 NMOS GDS 功放开关60V50A145W55/15nS0.022 RFP6N60 NMOS GDS 功放开关600V6A75W80/100nS1.50RFP60N06 NMOS GDS 功放开关60V60A120W50/15nS0.03 RFP70N06 NMOS GDS 功放开关60V70A150WSMP50N06 NMOS GDS 功放开关50V60A125W50nS0.026SMP60N06NMOSG功放开关60V60A125W50nS0.023RFP50N05 NMOS GDS 功放开关50V50A132W55/15nS0.022SMP50N06 NMOS GDS 功放开关50V60A125W50nS0.026SMP60N06 NMOS GDS 功放开关60V60A125W50nS0.02SMW11N20 NMOS GDS 功放开关200V11A150WSMW11P20 PMOS GDS 功放开关200V11A150WSMW20N10 NMOS GDS 功放开关100V20A150WSMW20N10 PMOS GDS 功放开关100V20A150WSSH7N90 NMOS GDS 高速电源开关900V7A150WSSP6N60 NMOS GDS 高速电源开关600V6A150WSSP5N90 NMOS GDS 高速电源开关900V5A125WSSP7N80 NMOS GDS 高速电源开关800V7A75WSUP75N06 NMOS GDS 功放开关60V75A125W0.05W12NA50W NMOS GDS 功放开关50V12A150W300/600nSGT15Q101 NMOS GDS IGBT 1400V15A150WGT25J101 NMOS GDS IGBT 800V25A150WGT25Q101 NMOS GDS IGBT 1400V25A180WGT40T101 NMOS GDS IGBT 1500V40A300WGT60M103 NMOS GDS IGBT 900V60A300WGT60M301 NMOS GDS IGBT 900V60A300WIMBH60 NMOS GDS-100 IGBT 1000V60A300WIMBH60D NMOS GDS-100 IGBT 1000V60A300W(带阻) SDT3055 NMOS GDSTSD45N50V NMOS 场效应模块500V45A400WTN2460L35N120 1200V35A250WEXB841 IGBT驱动BUZ111S NMOS GDS 55V 80A。

gv_man_kc

gv_man_kc

LASER
1 OUT 2
发射激光辐射指示灯
感测头 绝缘板 安装支架 主机板螺帽 M3 x L30 螺丝 激光警告标签
Байду номын сангаас
x1 x1 x1 x1 x2 x1
感测头 绝缘板 安装支架 主机板螺帽 M4 x L35 螺丝 激光警告标签
x1 X1 x1 x1 x2 x1
在出厂前, 我们已经彻底检查了包装中的物品。 然而, 当您发现了有缺陷或破损 物品, 请联系您最近的 KEYENCE 分支机构。
䞥ሲ᥹⚍ 㓚㒓
SET
DATUM
䆒ᅮؐ˄㓓㡆˅
1 2
MODE
A䚼
䞥ሲ᥹⚍
ᔧࠡؐ˄㑶㡆˅
DATUM DATUM
Ѹ᳓
SET
1 2
MODE
SET
1 2
MODE
安装感测头
使用专用的安装支架来安装感测头。 当没有使用专用的安装支架时, 内含的绝缘板必须如图所示插入到安装面和感测头之间。 (使用了专用的安装支架, 绝缘板就没有必要使用了。 )
六角头螺钉 (附件)
● 当前值和显示分辨率
在默认状态下, 当工件位于最大检测距离时当前值显示为 0。 将工件逐渐移近感 测头会提高显示值, 直到工件位于最小检测距离。 项目 当前值
● 当检测目标离墙很近时的安装。
● 当检测目标在洞中时的安装。
GV-H45
GV-H130
GV-H450 160 至 450 290 至 0 1
对于激光的安全措施
■ 发射激光辐射指示灯
在打开电源开关并且发出激光光束之后, 发射激光辐射指示灯就亮起。
传感器放大器
DATUM LASER 1 OUT 2 SEL 1spot

PLM12K44 产品列表说明书

PLM12K44 产品列表说明书

R622
x
Resistor 2R7 .33W 5% Surface Mounted 1206
R623
x
Resistor 10K .125W 1% Surface Mounted 0805
R500, R524, R526, R391,
x
R722, R330, R333, R533,
R570, R335, R429, R567,
PLM12K44
Part list
Ic Shunt Regulator TL431A SOT-23 Ic Voltage Regulator Lm317 Full Pack Ic Regulator Lm337 TO-220 Ic Comparator Lm339D Ic Digital Isolator SI8441-C
Transistor high-voltage NPN PMBTA42 SOT-23 Transistor high-voltage PNP PMBTA92 SOT-23 Transistor Bipolar Signal BC847B SOT-23 Transistor Signal MMBF4392 Transistor resistor-equipped NPN PDTC144ET SOT-23 Transistor Darlington BCV47 SOT-23 Ic Bus buffer/line driver 3 state 74AHC1G125 SOT353-1 Ic Photocoupler Tcet1102g
74AHC1G14
BAS21 1N4006 6V2.225W2%SOT23 BAV99B BAV70 FFPF60SA60DS 18V.225W2%SOT23 US1J

鸿志电子科技有限公司 HEL 14D102K 级别 K 普通型 K Series 压敏电阻商品说明书

鸿志电子科技有限公司 HEL 14D102K 级别 K 普通型 K Series 压敏电阻商品说明书

版本号:A/01压敏电阻承认书APPROVED SHEET FOR VARISTOR规格型号Part No.HEL 14D102K级别Class K 普通型 K SeriesUL认证号UL File No.E324904CSA认证号CSA File No.215101VDE认证号VDE File No.40037512CQC认证号CQC File No.CQC04001010845 (5D)CQC04001010847 (7D)CQC04001010846 (10D)CQC04001010844 (14D)CQC04001010848 (20D)(各规格压敏电阻对应的安规认证参见本承认书第14页)广东鸿志电子科技有限公司地址:广东省汕头市龙湖区浦江路6号GUANGDONG HONGZHI ELECTRONICS TECHNOLOGY CO., LTD.No.6 Pujiang Rd., Longhu district, Shantou City, Guangdong Province, China TEL: +86-754-88831426 ext. 0 / +86-754-88784177 / +86-754-89659651FAX: +86-754-88888417E-mail:*****************/****************一、 特殊要求和变更记录 (3)二、 HEL产品规格型号说明 (4)三、 尺寸和电性能 (5)四、 产品结构、材料及制造工艺流程 (6)五、 浪涌电流冲击级别 (7)六、 脉冲降额曲线图和伏安特性图、温度降额曲线 (8)七、 HEL压敏电阻技术术语及安全可靠性…………………………………………………… 9~13八、 安规认证 (14)九、 包装方法及储存条件…………………………………………………………………… 15~18十、 使用注意事项....................................................................................... 19~21十一、附录1:关于压敏电阻不同标准中浪涌冲击条款的简要说明 (22)十二、附录2:压敏电阻选型原则与方法 (23)十三、附录3:第三方检测报告……………………………………………………………… 24~37十四、附录:体系证书 (38)(承认书其它页内容与此表不一致时,以此表为准)HEL产品规格型号说明产品外型尺寸和电性能一、产品尺寸二、产品电性能型号规格压敏电压最大允许使用电压最大限制电压通流容量静态功率能量耐量静态电容量(参考值)V1mA(V)AC(V)DC(V)V50A(V)Imax(8/20μs)(A)In(15次)(8/20μs)(A)(W)(10/1000μs)(J)1kHz(PF)HEL 14D102K1000(900~1100)6258251,65045003,0000.6210180产品结构、材料及制造工艺流程(一)产品结构图(二)材料(三)制造工艺流程材料主要成分 化学式CAS No.瓷片ZnO, Bi 2O 3, Co 2O 3等1314-13-2内电极金属导电材料/焊锡Sn, Ag,Cu 7440-31-5导线Fe, Cu,Sn7439-89-63包封层环氧树脂C 21H 24O 4或有机硅树脂H 4Si9003-36-5 / 67763-03-5浪涌电流冲击级别Remark: the Impluse voltage testing standards(1.2/50μs) with 40 times are only applicable to the products whichwith the varistor voltage more than 430V.脉冲降额曲线图和伏安特性图温度降额曲线最大连续交流电压或最大连续直流电压降额曲线安规认证包装方法及储存条件 Packaging methods and storage conditions 一、编带包装方法 Taping Packaging Method(一)插件编带包装方式 Plug-in taping packaging method外箱尺寸Carton size:540mm×350mm×300mm注:内盒*即为最小包装Note:The inner box packing is the smallest package(二)平脚编带包装方式 Flat foot taping packaging外箱尺寸 Carton size:355mm×350mm×365mmNote:The Reel packing is the smallest package二、散装包装方式 Bulk Packin外箱尺寸 Carton size:435mm×280mm×200mm注:内盒*即为最小包装Note:The inner box packing is the smallest package三、储存条件 storage conditions储存条件 Storage conditions温度 temperature: -40℃~+125℃湿度 humidity: < 65%RH推荐条件 Recommended storage conditions温度 temperature:-10℃~+45℃湿度 humidity: < 55%RH插件编带尺寸 Plug-in Tape Packing平脚编带尺寸 Flat Knitting Tape Packing使用注意事项 Precautions for use附录1:关于压敏电阻不同标准中浪涌冲击条款的简要说明附录2:压敏电阻选型原则与方法附录3:第三方检测报告(一)赛宝实验室年度确认检测报告 完整版(二)国网检测报告 封面(完整版共28页)(三)RoHS测试报告 首页(完整版共7页)(四)Reach测试报告 首页(完整版共19页)(需要详细报告请与业务员联系)(需要详细报告请与业务员联系)(需要详细报告请与业务员联系)(需要详细报告请与业务员联系)(需要详细报告请与业务员联系)(需要详细报告请与业务员联系)附录4:体系证书。

罗格斯公司XtremeSpeed RO1200系列极低损耗数字电路板材料说明书

罗格斯公司XtremeSpeed RO1200系列极低损耗数字电路板材料说明书

XtremeSpeed™ RO1200™ extremely low loss digital circuit materials are ceramic-filled laminates reinforced with woven fiberglass. These materials are engineered to offer exceptional electrical performance and mechanical stability for the most demanding high speed applications.XtremeSpeed RO1200 series laminates combine the surface smoothness of a non-woven PTFE laminate, for finer line etching tolerances, with the rigidity of a woven-glass PTFE laminate. These materials can be fabricated into printed circuit boards using standard PTFE circuit board processing techniques as described in the application note, XtremeSpeed RO1200 Extremely Low Loss Digital Laminate Quick Reference Processing Guide. Features and Benefits:Superior signal integrity• Low dielectric constant• Low dissipation factor• Low profile copper for reducedinsertion lossExcellent thermal/mechanical performance characteristics• Ideal for high layer count structures • Suitable for lead free processing • Td: 500°C (TGA)• Low CTEWoven glass reinforcement• Improved rigidity for ease ofhandling• Spread glass for reduced signal skewThe information in this data sheet is intended to assist you in designing with Rogers’ circuit materials. It is not intended to and does not create any warranties express or implied, including any warranty of merchantability or fitness for a particular purpose or that the results shown on this data sheet will be achieved by a user for a particular purpose. The user should determine the suitability of Rogers’ circuit materials for each application.The Rogers’ logo, Helping power, protect, connect our World, XtremeSpeed and RO1200 are trademarks of Rogers Corporation or one of its subsidiaries. © 2022 Rogers Corporation, Printed in U.S.A., All rights reserved. Revised 1588 080122 Publication 92-173NOTE:[1] The design Dk is an average number from several different tested lots of material and on the most common thickness/s. If more detailed information is required*Contact Customer Service or Sales Engineering to inquire about additional available product configurations。

NAM12S06-D 电源模块 技术手册说明书

NAM12S06-D 电源模块 技术手册说明书

NAM12S06-D 电源模块技术手册文档版本 1.0发布日期2021-08-10华为技术有限公司前言概述本文档主要介绍NAM12S06-D模块电源的物理结构、电气特性和简单应用。

本文图片仅供参考,具体以实际为准。

读者对象本文档主要适用于以下工程师:●硬件工程师●软件工程师●系统工程师●技术支持工程师符号约定在本文中可能出现下列标志,它们所代表的含义如下。

符号说明表示如不避免则将会导致死亡或严重伤害的具有高等级风险的危害。

表示如不避免则可能导致死亡或严重伤害的具有中等级风险的危害。

表示如不避免则可能导致轻微或中度伤害的具有低等级风险的危害。

用于传递设备或环境安全警示信息。

如不避免则可能会导致设备损坏、数据丢失、设备性能降低或其它不可预知的结果。

“须知”不涉及人身伤害。

对正文中重点信息的补充说明。

“说明”不是安全警示信息,不涉及人身、设备及环境伤害信息。

修改记录修改记录累积了每次文档更新的说明。

最新版本的文档包含以前所有文档版本的更新内容。

文档版本 1.0 (2021-08-10)第一次正式发布。

目录前言 (i)1 安全注意事项 (1)1.1 通用安全 (1)1.2 人员要求 (2)1.3 电气安全 (3)2 产品概述 (4)3 电气规格 (5)3.1 绝对最大额定值 (5)3.2 输入特性 (5)3.3 输出特性 (6)3.4 保护特性 (6)3.5 动态特性 (7)3.6 效率特性 (7)3.7 其他特性 (9)4 推荐电路 (10)5 引脚描述和应用 (12)5.1 封装尺寸图 (12)5.2 结构尺寸图 (12)5.3 引脚分布 (14)5.4 引脚应用 (15)5.4.1 EN (15)5.4.2 输出电压调节(FB) (16)5.4.3 PG (17)6 特性曲线 (18)7 典型波形 (22)7.1 开机/关机波形 (22)7.2 输出电压纹波 (23)7.3 输出电压动态响应 (23)7.4 输入反射纹波电流 (24)8 保护特性 (25)9 二次组装 (26)10 存储要求 (27)11 产品包装 (28)A 可靠性测试 (30)1安全注意事项1.1 通用安全声明在安装、操作和维护设备时,请先阅读本手册,并遵循设备上标识及手册中所有安全注意事项。

计量经济学第二版课后习题1-14章中文版答案汇总

计量经济学第二版课后习题1-14章中文版答案汇总

第四章习题 1.(1)22ˆ=TSR estScore T =520.4-5.82×22=392.36 (2)ΔTestScore=-5.82×(23-19)=-23.28即平均测试成绩所减少的分数回归预测值为23.28。

(3)core est S T =βˆ0 +βˆ1×CS =520.4-5.82×1.4=395.85 (4)SER 2=∑=-n i u n 1ˆ21i 2=11.5 ∴SSR=∑=ni u1ˆi2=SER 2×(n-2)=11.5×(100-2)=12960.5R 2=T SS ESS =1-T SSSSR =0.08∴TSS=SSR ÷(1-R 2)=12960.5÷(1-0.08)=14087.5=21)(Y ∑=-ni iY∴s Y 2=1-n 121)(Y ∑=-ni iY =14087.5÷(100-1)≈140.30∴s Y ≈11.93 2. (1)①70ˆ=Height eight W =-99.41+3.94×70=176.39 ②65ˆ=Height eight W =-99.41+3.94×65=156.69 ③74ˆ=Height eight W=-99.41+3.94×74=192.15(2)ΔWeight=3.94×1.5=5.91(3)1inch=2.54cm,1lb=0.4536kg①eight Wˆ(kg)=-99.41×0.4536+54.24536.0×94.3Height(cm)=-45.092+0.7036×Height(cm)②R 2无量纲,与计量单位无关,所以仍为0.81③SER=10.2×0.4536=4.6267kg 3.(1)①系数696.7为回归截距,决定回归线的总体水平②系数9.6为回归系数,体现年龄对周收入的影响程度,每增加1岁周收入平均增加$9.6 (2)SER=624.1美元,其度量单位为美元。

m1ma141kt1g, m1ma142kt1g 单片硅开关二极管 数据表说明书

m1ma141kt1g, m1ma142kt1g 单片硅开关二极管 数据表说明书

M1MA141KT1G,M1MA142KT1GSingle Silicon Switching DiodeThis Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications.This device is housed in the SC--70 package which is designed for low power surface mount applications. Features∙Fast t rr,<3.0ns∙Low C D,<2.0pF∙These Devices are Pb--Free,Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGS(T A=25︒C)Rating Symbol Value UnitReverse VoltageM1MA141KT1M1MA142KT1V R4080VdcPeak Reverse VoltageM1MA141KT1M1MA142KT1V RM4080VdcForward Current I F100mAdc Peak Forward Current I FM225mAdcPeak Forward Surge Current I FSM(Note1)500mAdcTHERMAL CHARACTERISTICSRating Symbol Max Unit Power Dissipation P D150mW Junction Temperature T J150︒C StorageTemperature T stg--55~+150︒C Stresses exceeding Maximum Ratings may damage the device.MaximumRatings are stress ratings only.Functional operation above the Recommended Operating Conditions is not implied.Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.t=1secSC--70(SOT--323)CASE419STYLE2MARKING DIAGRAMMx=Device Codex=H for141I for142M=Date Code*G=Pb--Free PackageDevice Package Shipping†ORDERING INFORMATION†For information on tape and reel specifications, including part orientation and tape sizes,please refer to our Tape and Reel Packaging Specifications Brochure,BRD8011/D.Mx M GGM1MA142KT1G SC--70(Pb--Free)3000/Tape&Reel M1MA141KT1G SC--70(Pb--Free)3000/Tape&Reel (Note:Microdot may be in either location)*Date Code orientation may vary depending upon manufacturing location.CATHODE12ELECTRICAL CHARACTERISTICS(T A=25 C)Characteristic Condition Symbol Min Max Unit Reverse Voltage Leakage CurrentM1MA141KT1 M1MA142KT1V R=35VV R=75VI R--0.1m AdcForward Voltage I F=100mA V F-- 1.2VdcReverse Breakdown VoltageM1MA141KT1M1MA142KT1I R=100m A V R4080--VdcDiode Capacitance V R=0,f=1.0MHz C D-- 2.0pFReverse Recovery Time(Figure1)I F=10mA,V R=6.0V,R L=100Ω,I rr=0.1I Rt rr(Note2)-- 3.0ns2.t rr Test CircuitRt p =2m s t r =0.35nsrr RI F =10mA V R =6V R L =100ΩRECOVERY TIME EQUIVALENT TEST CIRCUITINPUT PULSEOUTPUT PULSEFigure 1.Recovery Time Equivalent Test Circuit100V F ,FORWARD VOLTAGE (VOLTS)101.00.110V R ,REVERSE VOLTAGE (VOLTS)1.00.10.010.0010.680V R ,REVERSE VOLTAGE (VOLTS)0.640.60.560.52C D ,D I O D E C A P A C I T A N C E (p F )2468I F ,F O R W A R D C U R R E N T (m A )Figure 2.Forward Voltage Figure 3.Reverse CurrentFigure 4.Diode CapacitanceI R ,R E V E R S E C U R R E N T (μA )SC −70 (SOT −323)CASE 419ISSUE PDATE 07 OCT 2021SCALE 4:1STYLE 3:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 2:PIN 1.ANODE2.N.C.3.CATHODE STYLE 1:CANCELLEDSTYLE 5:PIN 1.ANODE 2.ANODE 3.CATHODE STYLE 6:PIN 1.EMITTER 2.BASE3.COLLECTORSTYLE 7:PIN 1.BASE 2.EMITTER 3.COLLECTORSTYLE 8:PIN 1.GATE 2.SOURCE 3.DRAINSTYLE 9:PIN 1.ANODE 2.CATHODE3.CATHODE-ANODESTYLE 10:PIN 1.CATHODE 2.ANODE3.ANODE-CATHODEXX M G G XX = Specific Device Code M = Date CodeG= Pb −Free PackageGENERICMARKING DIAGRAM1STYLE 11:PIN 1.CATHODE2.CATHODE3.CATHODE*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products maynot follow the Generic Marking.MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSPUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

TVM-B系列热敏电阻中文资料

TVM-B系列热敏电阻中文资料

压敏电压 (@ 1mA DC)
最大连续工作电压
V1mA
△V1mA
VAC (rms)
VDC
(V)
(±%)
(V)
(V)
27
10
17
22
27
10
17
22
27
10
17
22
27
10
17
22
27
10
17
22
27
10
17
22
27
10
17
22
33
10
20
26
33
10
20
26
33
10
20
26
33
10
20
26
33
10
20
最大连续工作电压
VAC(rms)
VDC
(V)
(V)
4
5.5
4
5.5
4
5.5
4
5.5
4
5.5
4
5.5
4
5.5
6
8
6
8
6
8
6
8
6
8
6
8
6
8
7
9
7
9
7
9
8
11
8
11
8
11
8
11
8
11
8
11
8
11
11
14
11
14
11
14
11
14
11
14
11
14
11
14
14
18

瑞达康科技RMF120-12S12 DC DC电源技术指标书说明书

瑞达康科技RMF120-12S12 DC DC电源技术指标书说明书

RMF120-12S12
DC/DC电源技术指标书
Ver1.0
产品简介
RMF120-12S12DC/DC宽输入范围(18Vdc~36Vdc)工业级电源模块。

具有体积小和短路保护等功能,提供输入与输出1500Vdc的高隔离耐压和120W的输出功率。

应用于工业电脑、电力系统、智能家居、仪器仪表和电信等领域。

性能参数(测试条件:如无特殊说明,所有参数测试均在25℃条件下测得。


输入电压范围182436Vdc-
输入欠压保护15—17.9Vdc-
最大输入电流——7.92A Vin=12Vdc,Iomax 静态输入电流——80mA Vin=9Vdc~18Vdc,Io=0A 遥控电流—1—mA-
遥控高电平或悬空
开通
3.5—30Vdc相对-Vin
遥控低电平关断0— 1.5Vdc相对-Vin
启动延时时间——200ms Vin=12Vdc,纯电阻负载,90%Vin与10%Vo时间差
外形图及管脚说明
注:单位:mm(inch)
未注公差:X.X±0.5mm(X.XX±0.02inch)
X.XX±0.25mm(X.XXX±0.010inch)
序号12345678符号FG+Vin-Vin CNT TRIM NC-VO+VO 含义壳针输入正输入负遥控输出调节空针输出负输出正。

K G P S 中 频 电 源 装 置 12 脉 中 频 电 源 控 制 板

K G P S 中 频 电 源 装 置 12 脉 中 频 电 源 控 制 板

法,即炉衬材料中不能掺水。
2) 如 本 设 备 暂 时 不 用 时 , 应 加 强 通 风 和 干 燥 措 施 , 以 免 设 备 内 部 因 受 潮 而 造 成 损 坏 。
在室内可能结冻的情况下,应设法把装置内所有器件的冷却积水清除干净。
3) 设 备 的 使 用 、 日 常 维 护 和 保 养 , 应 参 照 说 明 书 第 八 节 的 有 关 要 求 。
洛阳市万聪电力设备有限公司
L8: 电 源 异 常 指 示 灯 : 当 进 线 电 压 过 低 或 缺 相 、 反 相 时 , 设 备 自 动 停 机 , 此 灯 被 点 亮 。 控 制 电 源 的 +24V 过 低 时 也 产 生 保 护 , 并 点 亮 此 灯 。 L9: 整 流 1 的 过 流 1 指 示 灯 ; L10: 整 流 1 的 限 流 1 指 示 灯 ; L12: 限 压 指 示 灯 ;
指示灯一只:电源通电指示。
三、 开机准备
1. 先 开 水 泵 , 并 检 查 各 水 路 是 否 符 合 以 下 要 求 : 1) 中 频 柜 和 电 容 器 柜 进 水 压 力 :0.1M p a~ 0.2M p a;进 水 温 度 : ≤ 30 ℃ ; 2) 熔 炼 炉 进 水 压 力 : 0.2M p a~ 0.3M p a; 进 水 温 度 : ≤ 35 ℃ ; 3) 各 水 接 头 无 渗 漏 水 问 题 。
起动也在工作。经过数次起动后,频率表首先升起,其他仪表停止摆动,但显示值较小。
随 旋 钮 继 续 慢 旋 , 所 有 仪 表 都 慢 慢 升 高 , 中 频 电 压 应 有 指 示 , 并 可 听 到 中 频 啸 叫 声 ,表
明起动成功。
5 ) 继 续 慢 旋 “ 调 压 电 位 器 ”, 频 率 表 会 逐 渐 稳 定 在 某 一 值 基 本 不 动 , 其 他 仪 表 随 旋 钮 继 续 升高。使中频电压达到工作位置。在此过程中随时观察两只直流电流表和两只中频电流

纳利尔(Nailor)1200SS系列静态钢材多叶火阻熔炉门说明书

纳利尔(Nailor)1200SS系列静态钢材多叶火阻熔炉门说明书
❑ 1201SS Non-standard sleeve. Specify _______ length _____ ga.
Available up to 36" (914) dependent upon wall thickness and
10 through 20 ga. (3.5 through 1.0).
• California State Fire Marshal Listing No. 03225-0935:101.
• City of New York MEA# 366-03-M.
The 1200SS Series dampers are ideal for high humidity, mildly corrosive or, with optional Type 316 construction, more severe environment applications where building codes require a fire damper for the protection of ductwork penetrations in walls that have a fire resistance rating of up to 2 hheights less than 8" (203) require a Type ‘B’ sleeve enclosure (Model 1202SS-3). Duct sizes less than 8" (203) in width only, or in both width and height require a Type ‘C’ enclosure (Model 1203SS-3).
Minimum

midi各乐器列表

midi各乐器列表

No. 英‎语中文‎Pian‎o(钢琴)‎1 ‎A cous‎t ic G‎r and ‎P iano‎大钢琴‎2Bri‎g ht A‎c oust‎i c Pi‎a no 亮‎音钢琴3‎Elec‎t ric ‎G rand‎Pian‎o大电钢‎琴4 H‎o nky-‎t onk ‎P iano‎酒吧钢琴‎5 El‎e ctri‎c Pia‎n o 1 ‎电钢琴1‎6Ele‎c tric‎Pian‎o 2 电‎钢琴27‎Harp‎s icho‎r d 大键‎琴8 C‎l avin‎e t 电翼‎琴Ch‎r omat‎i c Pe‎r cuss‎i on(固‎定音高敲击‎乐器)‎9 Ce‎l esta‎钢片琴‎10 Gl‎o cken‎s piel‎钟琴1‎1Mus‎i cal ‎b ox 音‎乐盒12‎Vibr‎a phon‎e颤音琴‎13 M‎a rimb‎a马林巴‎琴14 ‎X ylop‎h one ‎木琴15‎Tubu‎l ar B‎e ll 管‎钟16 ‎D ulci‎m er 洋‎琴Or‎g an(风‎琴)‎17 Dr‎a wbar‎Orga‎n音栓风‎琴18 ‎P ercu‎s sive‎Orga‎n敲击风‎琴19 ‎R ock ‎O rgan‎摇滚风琴‎20 C‎h urch‎orga‎n教堂管‎风琴21‎Reed‎orga‎n簧风琴‎22 A‎c cord‎i on 手‎风琴23‎Harm‎o nica‎口琴2‎4Tan‎g o Ac‎c ordi‎o n 探戈‎手风琴‎G uita‎r(吉他)‎25‎Acou‎s tic ‎G uita‎r(nyl‎o n) 木‎吉他(尼龙‎弦)26‎Acou‎s tic ‎G uita‎r(ste‎e l) 木‎吉他(钢弦‎)27 ‎E lect‎r ic G‎u itar‎(jazz‎)电吉他‎(爵士)‎28 El‎e ctri‎c Gui‎t ar(c‎l ean)‎电吉他(‎清音)2‎9Ele‎c tric‎Guit‎a r(mu‎t ed) ‎电吉他(闷‎音)30‎Over‎d rive‎n Gui‎t ar 电‎吉他(驱动‎音效)3‎1Dis‎t orti‎o n Gu‎i tar ‎电吉他(失‎真音效)‎32 Gu‎i tar ‎h armo‎n ics ‎吉他泛音‎Bass‎(贝斯)‎33 ‎A cous‎t ic B‎a ss 贝‎斯34 ‎E lect‎r ic B‎a ss(f‎i nger‎)电贝斯‎(指奏)‎35 El‎e ctri‎c Bas‎s(pic‎k) 电贝‎斯(拨奏)‎36 F‎r etle‎s s Ba‎s s 无品‎贝斯37‎Slap‎Bass‎1 捶鈎‎贝斯38‎Slap‎Bass‎2 捶鈎‎贝斯39‎Synt‎h Bas‎s 1 合‎成贝斯1‎40 Sy‎n th B‎a ss 2‎合成贝斯‎2St‎r ings‎(弦乐器‎)4‎1Vio‎l in 小‎提琴42‎Viol‎a中提琴‎43 C‎e llo ‎大提琴4‎4Con‎t raba‎s s 低音‎大提琴4‎5Tre‎m olo ‎S trin‎g s 颤弓‎弦乐46‎Pizz‎i cato‎Stri‎n gs 弹‎拨弦乐4‎7Orc‎h estr‎a l Ha‎r p 竖琴‎48 T‎i mpan‎i定音鼓‎Ens‎e mble‎(合奏)‎49 ‎S trin‎g Ens‎e mble‎1 弦乐‎合奏15‎0Str‎i ng E‎n semb‎l e 2 ‎弦乐合奏2‎51 S‎y nth ‎S trin‎g s 1 ‎合成弦乐1‎52 S‎y nth ‎S trin‎g s 2 ‎合成弦乐2‎53 V‎o ice ‎A ahs ‎人声“啊”‎54 V‎o ice ‎O ohs ‎人声“喔”‎55 S‎y nth ‎V oice‎合成人声‎56 O‎r ches‎t ra H‎i t 交响‎打击乐‎B rass‎(铜管乐‎器)‎57 Tr‎u mpet‎小号5‎8Tro‎m bone‎长号5‎9Tub‎a大号(‎吐巴号、低‎音号)6‎0Mut‎e d Tr‎u mpet‎闷音小号‎61 F‎r ench‎horn‎法国号(‎圆号)6‎2Bra‎s s Se‎c tion‎铜管乐‎63 Sy‎n th B‎r ass ‎1合成铜‎管164‎Synt‎h Bra‎s s 2 ‎合成铜管2‎Ree‎d(簧乐‎器)‎65 So‎p rano‎Sax ‎高音萨克斯‎风66 ‎A lto ‎S ax 中‎音萨克斯风‎67 T‎e nor ‎S ax 次‎中音萨克斯‎风68 ‎B arit‎o ne S‎a x 上低‎音萨克斯风‎69 O‎b oe 双‎簧管70‎Engl‎i sh H‎o rn 英‎国管71‎Bass‎o on 低‎音管(巴颂‎管)72‎Clar‎i net ‎单簧管(黑‎管、竖笛)‎Pip‎e(吹管‎乐器)‎73 P‎i ccol‎o短笛‎74 Fl‎u te 长‎笛75 ‎R ecor‎d er 竖‎笛76 ‎P an F‎l ute ‎排笛77‎Blow‎n Bot‎t le 瓶‎笛78 ‎S haku‎h achi‎尺八7‎9Whi‎s tle ‎哨子80‎Ocar‎i na 陶‎笛Sy‎n th L‎e ad(合‎成音主旋律‎)8‎1Lea‎d 1(s‎q uare‎)方波‎82 Le‎a d 2(‎s awto‎o th) ‎锯齿波8‎3Lea‎d 3(c‎a llio‎p e) 汽‎笛风琴8‎4Lea‎d 4(c‎h iff)‎合成吹管‎85 L‎e ad 5‎(char‎a ng) ‎合成电吉他‎86 L‎e ad 6‎(voic‎e) 人声‎键盘87‎Lead‎7(fi‎f ths)‎五度音‎88 Le‎a d 8(‎b ass ‎+ lea‎d) 贝斯‎吉他合奏‎Synt‎h Pad‎(合成音和‎弦衬底)‎89 ‎P ad 1‎(new ‎a ge) ‎新世纪9‎0Pad‎2(wa‎r m) 温‎暖91 ‎P ad 3‎(poly‎s ynth‎)多重合‎音92 ‎P ad 4‎(choi‎r) 人声‎合唱93‎Pad ‎5(bow‎e d) 玻‎璃94 ‎P ad 6‎(meta‎l lic)‎金属9‎5Pad‎7(ha‎l o) 光‎华96 ‎P ad 8‎(swee‎p) 扫掠‎Syn‎t h Ef‎f ects‎(合成音效‎果)‎97 FX‎1(ra‎i n) 雨‎98 F‎X 2(s‎o undt‎r ack)‎电影音效‎99 F‎X 3(c‎r ysta‎l) 水晶‎100 ‎F X 4(‎a tmos‎p here‎)气氛‎101 F‎X 5(b‎r ight‎n ess)‎明亮1‎02 FX‎6(go‎b lins‎)魅影‎103 F‎X 7(e‎c hoes‎)回音‎104 F‎X 8(s‎c i-fi‎)科幻‎Ethn‎i c(民族‎乐器)‎105‎Sita‎r西塔琴‎106 ‎B anjo‎五弦琴(‎斑鸠琴)‎107 S‎h amis‎e n 三味‎线108‎Koto‎十三弦琴‎(古筝)‎109 K‎a limb‎a卡林巴‎铁片琴1‎10 Ba‎g pipe‎苏格兰风‎笛111‎Fidd‎l e 古提‎琴112‎Shan‎a i 兽笛‎,发声机制‎类似唢呐‎Perc‎u ssiv‎e(打击‎乐器)‎113 ‎T inkl‎e Bel‎l叮当铃‎114 ‎A gogo‎阿哥哥鼓‎115 ‎S teel‎Drum‎s钢鼓‎116 W‎o odbl‎o ck 木‎鱼117‎Taik‎o Dru‎m太鼓‎118 M‎e lodi‎c Tom‎定音筒鼓‎119 ‎S ynth‎Drum‎合成鼓‎120 R‎e vers‎e Cym‎b al 逆‎转钹声‎S ound‎effe‎c ts(特‎殊音效)‎12‎1Gui‎t ar F‎r et N‎o ise ‎吉他滑弦杂‎音122‎Brea‎t h No‎i se 呼‎吸杂音1‎23 Se‎a shor‎e海岸‎124 B‎i rd T‎w eet ‎鸟鸣12‎5Tel‎e phon‎e Rin‎g电话铃‎声126‎Heli‎c opte‎r直升机‎127 ‎A ppla‎u se 拍‎手128‎Guns‎h ot 枪‎声‎打击乐音符‎(Perc‎u ssio‎n not‎e s)‎在‎G ener‎a l MI‎D I中,频‎道10被保‎留作为打击‎乐器使用,‎不论音色编‎号为何。

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