BZX55-C9V1中文资料
BCX55中文资料
SOT89
D
B
A
b3
E HE
L
1
2
b2
3
c
w M
b1 e1 e
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13
Philips Semiconductors
Product specification
NPN medium power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCX54 BCX55 BCX56 VCEO collector-emitter voltage BCX54 BCX55 BCX56 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base PARAMETER collector-base voltage CONDITIONS open emitter
BZX84C16LT1G中文资料
BZX84B4V7LT1,BZX84C2V4LT1 Series Zener Voltage Regulators225 mW SOT−23 Surface MountThis series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables,and high density PC boards.Features•Pb−Free Packages are Available•225 mW Rating on FR−4 or FR−5 Board•Zener Breakdown V oltage Range − 2.4 V to 75 V•Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (>16 KV) per Human Body Model •Tight Tolerance Series Available (See Page 4)Mechanical CharacteristicsCASE: V oid-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 SecondsPOLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 X 0.75 X 0.62 in.2.Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATION(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°Cunless otherwise noted, V F = 0.95 V Max. @ I F = 10 mA)ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)Z*The “G” suffix indicates Pb−Free package available.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)Z*The “G” suffix indicates Pb−Free package available.V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)− 3− 2012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , NOMINAL ZENER VOLTAGEFigure 3. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()Ω1000100101V F , FORWARD VOLTAGE (V)Figure 4. Typical Forward VoltageI F , F O R W A R D C U R R E N T (m A )1000100101C , C A P A C I T A N C E (p F )V Z , NOMINAL ZENER VOLTAGE (V)Figure 5. Typical Capacitance 1000100101V Z , ZENER VOLTAGE (V)1001010.10.01I Z , Z E N ER C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )µV Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 7. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current(12 V to 91 V)PACKAGE DIMENSIONSSOT−23TO−236AB CASE 318−09ISSUE AK*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
BZX84C9V1S-7-F中文资料
Lead-freeBZX84C2V4S - BZX84C39SDUAL 200mW SURFACE MOUNT ZENER DIODEFeaturesMaximum Ratings@ T A = 25°C unless otherwise specified* Add “-7-F” to the appropriate type number in Table 1 from Sheet 2 example: 6.2V Zener = BZX84C6V2S-7-F.Notes: 1. Mounted on FR4 PC Board with recommended pad layout which can be found on our website at /datasheets/ap02001.pdf.2. Short duration test pulse used to minimize self-heating effect.3. f = 1KHz.4. For Packaging Details, got to our website at /datasheets/ap02007.pdf.5. No purposefully added lead.(Note 4)Ordering InformationElectrical Characteristics@ T A = 25°C unless otherwise specifiedNotes: 6. Short duration test pulse used to minimize self-heating effect. 7. f = 1KHz.Date Code KeyKXX = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002M = Month ex: 9 = SeptemberKXX YMK X X Y M Marking Information102030405012345678910I , Z E N E R C U R R E N T (m A )Z V , ZENER VOLTAGE (V)Z Fig. 2 Zener Breakdown CharacteristicsC , T O T A L C A P A C I T A N C E (p F )T 101001000V , NOMINAL ZENER VOLTAGE (V)Z Fig. 4. Total Capacitance vs Nominal Zener VoltageT , AMBIENT TEMPERATURE, (°C)A Fig. 1. Power Derating CurveP , P O W E R D I S S I P A T I O N (m W )D 200100300001002000102030I , Z E N E R C U R R E N T (m A )Z V , ZENER VOLTAGE (V)Z Fig. 3, Zener Breakdown Characteristics10203040IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。
BZX84B6V2LT1G中文资料
BZX84B4V7LT1,BZX84C2V4LT1 Series Zener Voltage Regulators225 mW SOT−23 Surface MountThis series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables,and high density PC boards.Features•Pb−Free Packages are Available•225 mW Rating on FR−4 or FR−5 Board•Zener Breakdown V oltage Range − 2.4 V to 75 V•Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (>16 KV) per Human Body Model •Tight Tolerance Series Available (See Page 4)Mechanical CharacteristicsCASE: V oid-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 SecondsPOLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 X 0.75 X 0.62 in.2.Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATION(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°Cunless otherwise noted, V F = 0.95 V Max. @ I F = 10 mA)ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)Z*The “G” suffix indicates Pb−Free package available.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)Z*The “G” suffix indicates Pb−Free package available.V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)− 3− 2012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , NOMINAL ZENER VOLTAGEFigure 3. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()Ω1000100101V F , FORWARD VOLTAGE (V)Figure 4. Typical Forward VoltageI F , F O R W A R D C U R R E N T (m A )1000100101C , C A P A C I T A N C E (p F )V Z , NOMINAL ZENER VOLTAGE (V)Figure 5. Typical Capacitance 1000100101V Z , ZENER VOLTAGE (V)1001010.10.01I Z , Z E N ER C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )µV Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 7. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current(12 V to 91 V)PACKAGE DIMENSIONSSOT−23TO−236AB CASE 318−09ISSUE AK*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
ZMM55C9V1中文资料
This is a complete series of zener diodes with limits and excellent operating characteristics that reflect thethe superior capabilities of silicon-oxide passivated junctions. It is designed for use in hybrid thick and thinfilm circuits.Maximum RatingsUnit Characteristics SymbolMaxTotal Device Dissipation @T A=25℃P tot 500 mWStorage Temperature Tstg -65 to +175 °CJunction Temperature Tj 175 °CElectrical Characteristics (T L=30℃, unless otherwise noted, V F=1.0V Max @I F=100mA for all types.)Test Current Maximum ZenerImpedance(Note 2)Maximum ReverseLeakage CurrentDevice NominalZenerVoltageVz at Iz T(V)(Note1)I ZT(mA)Z ZT atI ZT(Ω)Z ZK atI ZK=1mA(Ω)TypicalTemperatureCoefficient(%/℃) I R(μA)TestVoltage(V)MaximumRegulationCurrentI ZM(mA)(Note 3)ZMM55C2V4 2.28-2.56 5 85 600 -0.070 50 1.0 150 ZMM55C2V7 2.5-2.9 5 85 600 -0.070 10 1.0 135 ZMM55C3V0 2.8-3.2 5 85 600 -0.070 4 1.0 125 ZMM55C3V3 3.1-3.5 585 600 -0.065 2 1.0115ZMM55C3V6 3.4-3.8 585 600 -0.060 2 1.0105ZMM55C3V9 3.7-4.1 585 600 -0.050 2 1.095ZMM55C4V3 4.0-4.6 575 600 -0.025 1 1.090ZMM55C4V7 4.4-5.0 560 600 -0.010 0.5 1.085ZMM55C5V1 4.8-5.4 535 550 +0.015 0.1 1.080ZMM55C5V6 5.2-6.0 525 450 +0.025 0.1 1.070ZMM55C6V2 5.8-6.6 510 200 +0.035 0.1 2.0 64 ZMM55C6V8 6.4-7.2 58 150 +0.045 0.1 3.0 58 ZMM55C7V5 7.0-7.9 5 7 50 +0.050 0.1 5.0 53 ZMM55C8V2 7.7-8.7 5 7 50 +0.050 0.1 6.0 47 ZMM55C9V1 8.5-9.6 5 10 50 +0.060 0.1 7.0 43 ZMM55C10 9.4-10.6 5 15 70 +0.070 0.1 7.5 40 ZMM55C1110.4-11.6 5 20 70 +0.070 0.1 8.5 36 ZMM55C1211.4-12.7 5 20 90 +0.070 0.19.0 32 ZMM55C1312.4-14.1 526 110 +0.0700.110 29 ZMM55C1513.8-15.6 530 110 +0.0700.111 27 ZMM55C1615.3-17.1 540 170 +0.0700.112 24 ZMM55C1816.8-19.1 550 170 +0.0700.114 21 ZMM55C2018.8-21.2 555 220 +0.070 0.115 20 ZMM55C2220.8-23.3 5 55 220 +0.070 0.1 17 18 ZMM55C2422.8-25.6 5 80 220 +0.080 0.118 16 ZMM55C2725.1-28.9 580 220 +0.0800.120 14 ZMM55C3028-32 580 220 +0.0800.122 13 ZMM55C3331-35 580 220 +0.0800.124 12 ZMM55C3634-38 580 220 +0.0800.127 11 ZMM55C3937-41 2.5 90 500 +0.0800.130 10 ZMM55C4340-46 2.590 600 +0.0800.133 9.2 ZMM55C4744-50 2.5110 700 +0.0800.136 8.5 Note: 1.The type numbers listed have zener voltage min/max as shown. Device tolerance of ±2% are indicated by a “B”instead of a “C”. Zener voltage is measured with the device junction in thermal equilibrium at the lead temperatureof 30℃±1℃.2.Z ZT and Z ZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specifiedlimits are for I Z(ac) =0.1I Z(dc) with the ac frequency = 1k Hz.3.This data was calculated using nominal voltages. The maximum current handling capability on a worse case basis islimited by the actual zener voltage at the operating point and the powered derating curve.Mini- Melf (SOD-80C) Dimension*:Typical Inches Millimeters Inches MillimetersDIMMin. Max. Min. Max. DIMMin. Max. Min. Max.A 0.0512 0.0591 1.30 1.50 C 0.0118 0.0197 0.30 0.50B 0.0118 0.0197 0.30 0.50 D 0.1260 0.1417 3.2 3.6Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.Important Notice:• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.• CYStek reserves the right to make changes to its products without notice.• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.ABCDCathode MarkLL-34 Mini-Melf SOD-80CCYStek package code:SM。
启珑微电子产品手册说明书
产品手册PRODUCT MANUAL(北京︶有限公司并一直致力于为工业智能控制、医疗设备、轨道交通、智能交通以及智能家居等领域提供更优质的产品与服务。
公司具有深厚的文化底蕴，由多位有欧美留学、工作经历的归国人员创办，坚实的理论功底和丰富的芯片设计经验奠定了启珑微电子的高起点和高水准，并迅速成长为业内具有自主知识产权的中国IC设计品牌之一。
产品手册01序号产品型号封装形式产品概述兼容型号1CLM811HST-AXC TQFP-48SL811HST-AXC 2CLCP82C55AZ DIP-40CP82C55AZ 3CLIP82C55AZ DIP-40IP82C55AZ 4CLCS82C55AZ PLCC-44CS82C55AZ 5CLIS82C55AZ PLCC-44IS82C55AZ 6CLCQ82C55AZ MQFP-44CQ82C55AZ 7CLIQ82C55AZ MQFP-44IQ82C55AZ 8CLID82C55AZ DIP-40ID82C55A 9CLMD82C55A/B DIP-40MD82C55A/B 10CLMD82C55QA DIP-40MD82C55QA 11CLM65HVD230D SOIC-8SN65HVD230D 12CLM65HVD230QD SOIC-8SN65HVD230QD 13CLM65HVD231D SOIC-8SN65HVD231D 14CLM65HVD231QD SOIC-8SN65HVD231QD 15CLM65HVD232D SOIC-8SN65HVD232D 16CLM65HVD232QD SOIC-8SN65HVD232QD 17CLM65HVD233D SOIC-8具有待机模式和环回功能的 3.3V SN65HVD233D 18CLM65HVD233HD SOIC-8具有待机模式和环回功能的 3.3V SN65HVD233HD 19CLM65HVD233QDRQ1SOIC-8具有待机模式和环回功能的 3.3V SN65HVD233QDRQ120CLM65HVD233MDREP SOIC-8具有待机模式和环回功能的 3.3V SN65HVD233MDREP产品手册02序号产品型号封装形式产品概述兼容型号21CLM65HVD234D SOIC-8SN65HVD234D 22CLM65HVD234QDRQ1SOIC-8SN65HVD234QDRQ123CLM65HVD235D SOIC-8SN65HVD235D 24CLM65HVD235QDRQ1SOIC-8SN65HVD235QDRQ125CLM75176BPS SOIC-8SN75176BPSR 26CLM75176BDR SOIC-8SN75176BDR 27CLM75176ADR SOIC-8SN75176ADR 28CLM75176AP DIP-8SN75176AP 29CLM76176BP DIP-8SN75176BP 30CLM75179BPS SOIC-8SN75179BPS 31CLM75179BDR SOIC-8SN75179BDR 32CLM75179AP DIP-8SN75179AP 33CLM75179BP DIP-8SN75179BP 34CLM65HVD08D SOIC-8SN65HVD08D 35CLM65HVD08P DIP-8SN65HVD08P 36CLM65HVD75D SOIC-8具有IEC ESD保护功能和20Mbps的SN65HVD75D 37CLM65HVD75DGK VSSOIC-8具有IEC ESD保护功能和20Mbps的SN65HVD75DGK 38CLM65HVD75DRBT VDFN-8具有IEC ESD保护功能和20Mbps的SN65HVD75DRBT 39CLM3085CPA+DIP-8(10Mbps)、限摆率RS-485/MAX3085CPA+40CLM3085EPA+DIP-8(10Mbps)、限摆率RS-485/MAX3085EPA+产品手册03序号产品型号封装形式产品概述兼容型号41CLM3085EEPA DIP-8(10Mbps)、限摆率RS-485/MAX3085EEPA 42CLM3085CSA+T SOIC-8(10Mbps)、限摆率RS-485/MAX3085CSA+43CLM3085ECSA+T MSOIC-8(10Mbps)、限摆率RS-485/MAX3085ECSA+T 44CLM3085ESA+T SOIC-8(10Mbps)、限摆率RS-485/MAX3085ESA+45CLM3085EESA+T SOIC-8(10Mbps)、限摆率RS-485/MAX3085EESA+46CLM3088CSA+T SOIC-8MAX3088CSA+T 47CLM3088ECSA+T SOIC-8MAX3088ECSA+T 48CLM3088ESA+T SOIC-8MAX3088ESA+T 49CLM3088EESA+T SOIC-8MAX3088EESA+T 50CLM3088CPA+DIP-8MAX3088CPA+51CLM3088ECPA+DIP-8MAX3088ECPA+52CLM3088EPA+DIP-8MAX3088EPA+53CLM3088EEPA+DIP-8MAX3088EEPA+54CLM485CPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX485CPA+55CLM485ECPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX485ECPA+56CLM485EPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX485EPA+57CLM485EEPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX485EEPA+58CLM485CSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX485CSA+59CLM485ESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX485ESA+60CLM485EESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX485EESA+产品手册04序号产品型号封装形式产品概述兼容型号61CLM3490CSA+SOIC-8 3.3V供电、10Mbps、限摆率、真MAX3490CSA+62CLM3490ECSA+SOIC-8 3.3V供电、10Mbps、限摆率、真MAX3490ESA+63CLM3490ESA+SOIC-8 3.3V供电、10Mbps、限摆率、真MAX3490ESA+64CLM3490EESA+SOIC-8 3.3V供电、10Mbps、限摆率、真MAX3490EESA+65CLM3491CSD SOP-14 3.3V供电、10Mbps、限摆率、真MAX3491CSD+66CLM3491ECSD+SOP-14 3.3V供电、10Mbps、限摆率、真MAX3491ECSD+67CLM3491ESD+SOP-14 3.3V供电、10Mbps、限摆率、真MAX3491ESD+68CLM3491EESD+SOP-14 3.3V供电、10Mbps、限摆率、真MAX3491EESD+69CLM490CSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX490CSA+70CLM490ECSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX490ECSA+71CLM490ESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX490ESA+72CLM490EESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX490EESA+73CLM490CPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX490CPA+74CLM490ECPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX490ECPA+75CLM490EPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX490EPA+76CLM490EEPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX490EEPA+77CLM488CSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX488CSA+78CLM488ECSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX488ECSA+79CLM488ESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX488ESA+80CLM488EESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX488EESA+产品手册序号产品型号封装形式产品概述兼容型号81CLM488CPA+DIP-8MAX488CPA+82CLM488ECPA+DIP-8MAX488ECPA+83CLM488EPA+DIP-8MAX488EPA+84CLM488EEPA+DIP-8MAX488EEPA+85CLM232CSE SOIC-16MAX232CSE+T86CLM232ECSE SOIC-16MAX232ECSE+87CLM232ESE SOIC-16MAX232ESE+T88CLM232EESE SOIC-16MAX232EESE+T89CLM232CPE DIP-16MAX232CPE+90CLM232ECPE DIP-16MAX232ECPE+91CLM232EPE DIP-16MAX232EPE+92CLM232EEPE DIP-16MAX232EEPE+93CLM232CWE SOIC-16MAX232CWE+T94CLM232ECWE SOIC-16MAX232ECWE+T95CLM232EWE SOIC-16MAX232EWE+T96CLM232EEWE SOIC-16MAX232EEWE+T97CLM232ACWE SOIC-16MAX232ACWE+T98CLM232AEWE SOIC-16MAX232AEWE+99CLM3232CSE SOIC-16MAX3232CSE+T 100CLM3232ECSE SOIC-16MAX3232ECSE+T05产品手册06序号产品型号封装形式产品概述兼容型号101CLM3232ESE SOIC-16MAX3232ESE+T 102CLM3232EESE SOIC-16MAX3232EESE+T 103CLM1302S SOIC-8DS1302S+T&R 104CLM1302SN+SOIC-8DS1302SN+T&R 105CLM1302Z+T SOIC-8DS1302Z+T&R 106CLM1302ZN+SOIC-8DS1302ZN+T&R 107CLM1302+DIP-8DS1302+108CLM1302N+DIP-8DS1302N+109CLM307Z+SOIC-8DS1307Z+T&R 110CLM1307ZN+SOIC-8DS1307ZN+T&R 111CLM1307+DIP-8DS1307+112CLM1307N+DIP-8DS1307N+113CLM4717EUB+MSOP-10拟开关MAX4717EUB+114CLM231N/NOPB DIP-8LM231N/NOPB 115CLM231AN/NOPB DIP-8LM231AN/NOPB 116CLM331N/NOPB DIP-8LM331N/NOPB 117CLM331AN/NOPB DIP-8LM331AN/NOPB 118CLM298N Multiwatt-15L298N 119CLM298P POWERSO-20L298P 120CLM2543CDW SOIC-20TLC2543CDW产品手册07序号产品型号封装形式产品概述兼容型号121CLM2543IDW SOIC-20TLC2543IDW 122CLM2543CDB SSOP-20TLC2543CDB 123CLM2543IDB SSOP-20TLC2543IDB 124CLM2543CN DIP-20TLC2543CN 125CLM2543IN DIP-20TLC2543IN 126CLM1543CDW SOIC-20TLC1543CDW 127CLM1543IDW SOIC-20TLC1543IDW 128CLM1543CN DIP-20TLC1543CN 129CLM1543IN DIP-20TLC1543IN 130CLM5615CDGK VSSOIC-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615CDGK 131CLM5615IDGK VSSOIC-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615IGGK 132CLM5615CD SOIC-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615CD 133CLM5615ID SOIC-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615ID 134CLM5615CP DIP-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615CP 135CLM5615IP DIP-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615IP 136CLM3616-00SOP-14IW3616-00137CLM3616-01SOP-14IW3616-01138CLM3617-00SOP-14IW3617-00139CLM3617-01SOP-14IW3617-01140CLM3630-00SOP-14IW3630-00产品手册序号产品型号封装形式产品概述兼容型号141CLM1100-0001BGA-128ASIC从站控制ET1100-0001142CLM1100-0002BGA-128ASIC从站控制ET1100-0002143CLM1100-0003BGA-128ASIC从站控制ET1100-0003144CLM1200-0001QFN-48ASIC从站控制ET1200-0001145CLM1200-0002QFN-48ASIC从站控制ET1200-0002146CLM1200-0003QFN-48ASIC从站控制ET1200-0003147CLM8656ARZ SOIC-8AD8656ARZ148CLM8656ARMZ MSOIC-8AD8656ARMZ149CLM1040T/CM,118SOIC-8TJA1040T/CM,118 150CLM1042T/CM,118SOIC-8TJA1042T/CM,118 151CLM1050T/CM,118SOIC-8TJA1050T/CM,118 152CLM1051T/CM,118SOIC-8TJA1051T/CM,118 153CLM82C250T/YM SOIC-8PCA82C250T/YM 154CLM82C251T/YM SOIC-8PCA82C251T/YM 155CLMEE80C196KC20PLCC-68EE80C196KC20 156CLMEN80C196KC20PLCC-68EN80C196KC20 157CLMN80C196KC20PLCC-68N80C196KC20 158CLMTN80C196KC20PLCC-68TN80C196KC20 159CLMEE87C196KC20PLCC-68EE87C196KC20 160CLMEN87C196KC20PLCC-68EN87C196KC2008产品手册09序号产品型号封装形式产品概述兼容型号161CLMN87C196KC20PLCC-68N87C196KC20162CLMTN87C196KC20PLCC-68TN87C196KC20163CLM8051F020-GQ TQFP-100C8051F020-GQ 164CLM8051F021-GQ TQFP-64C8051F021-GQ 165CLM8051F330-GM VFQFN-20C8051F330-GM 166CLM8051F500-IQ TQFP-48C8051F500-IQ 167CLM8051F500-IM VFQFN-48C8051F500-IM 168CLM8051F502-IQ LQFP-32C8051F502-IQ 169CLM8051F502-IM QFN-32C8051F502-IM170CLM08D1500CIYB/NOPB HLQFP-128ADC08D1500CIYB/NOPB 171CLM083000CIYB/NOPB HLQFP-128ADCADC083000CIYB/NOPB 172CLM10AQ190AVTPY EBGA-38010位5GSPS ADC EV10AQ190AVTPY 173CLM9680BCPZ-1250LFCSP-64双通道14位1GSPS ADC AD9680BCPZ-1250174CLM9739BBCZ BGA-16014位、2.5 GSPS、RF数模AD9739BBCZ 175CLM9779ABSVZ TQFP-100双通道16位1GSPS DAC AD9779ABSVZ 176CLM12DS130AVZPY FPBGA-19612位3GSPS DAC EV12DS130AVZPY 177CLM12DS460AVZP FPBGA-19612位6.4GSPS DAC EV12DS460AVZP 178CLM9434BCPZ-370LFCSP-5612位370MSPS ADC AD9434BCPZ-370179CLM9434BCPZ-500LFCSP-5612位500MSPS ADC AD9434BCPZ-500180CLM4149IRGZTVQFN-4814位250MSPS ADCADS4149IRGZT产品手册10序号产品型号封装形式产品概述兼容型号181CLM9467BCPZ-200LFCSP-7216位200MSPS ADC AD9467BCPZ-200182CLM9467BCPZ-250LFCSP-7216位250MSPS ADC AD9467BCPZ-250183CLM9656BCPZ-125LFCSP-56四通道16位125MSPS ADC AD9656BCPZ-125184CLM9245BCPZ-40LFCSP-3214位40MSPS ADC AD9245BCPZ-40185CLM9245BCPZ-65LFCSP-3214位65MSPS ADC AD9245BCPZ-80186CLM9245BCPZ-80LFCSP-3214位80MSPS ADC AD9245BCPZ-80187CLM9783BCPZ LFCSP-72双通道16位500MSPS DAC AD9783BCPZ 188CLM7656BSTZ-REEL LQFP-64六通道16位250KSPS ADC AD7656BSTZ-REEL 189CLM7960BCPZLFCSP-3218位2MSPS ADC AD7960BCPZ190CLM128S102CIMTX/NOPB TSSOP-1612位1MSPS ADC ADC128S102CIMTX/NOPB 191CLM5638IDR SOIC-8DACTLV5638IDR 192CLM7606BSTZ LQFP-64AD7606BSTZ 193CLM9625BBPZ-2.5BGA-19612位2.6GSPS ADC AD9625BBPZ-2.5194CLM9164BBCZ BGA-16516位12GSPS DAC AD9164BBCZ 195CLM9154BCPZ LFCSP-88四通道16位2.4GSPS DAC AD9154BCPZ 196CLM2160IUK#PBF QFN-4816位25MSPS ADC LTC2160IUK#PBF 197CLM9652BBCZ-310BGA-144双通道16位310MSPS ADC AD9652BBCZ-310198CLM7779ACPZ-RL LFCSP-6424位16KSPS ADC AD7779ACPZ-RL 199CLM9208BBPZ-3000BGA-196双通道14位3GSPS ADCAD9208BBPZ-3000200CLM320VC33PGE120LQFP-144TMS320VC33PGE120产品手册序号产品型号封装形式产品概述兼容型号201CLM320VC33PGEA120LQFP-144TMS320VC33PGEA120 202CLM320VC33PGE150LQFP-144TMS320VC33PGE150203CLM320VC5402PGE100LQFP-144TMS320VC5402PGE100 204CLM320F28335PGFA LQFP-176TMS320F28335PGFA205CLM320LF2406APZA LQFP-100TMS320LF2406APZA206CLM320LF2406APZS LQFP-100TMS320LF2406APZS207CLM320LF2407APGES LQFP-144TMS320LF2407APGES208CLM320LF2407APGEA LQFP-144TMS320LF2407APGEA 209CLM320C6713BPYP200HLQFP-208TMS320C6713BPYP200 210CLM320C6713BZDP225BGA-272TMS320C6713BZDP225 211CLM320C6713BGDP225BGA-272TMS320C6713BGDP225 212CLM320C6713BZDP300BGA-272TMS320C6713BZDP300 213CLM320C6713BGDG300BGA-272TMS320C6713BGDP30011邮箱：*******************。
卫星接收机使用手册.
安徽农村中小学远程教育工程的卫星接收机型号为 DVS-398F+，如下图：
图表 2-1 前面板图
图表 2-2 后面板图
2.1 产品特点
该机具有以下特点： (1) 中文、英文可切换电视屏幕菜单显示 克服以往只有英文菜单的缺陷； (2) PID 码输入手动搜索，区别以往的手动搜索更加省时省力； (3) 最多可存贮 700 个频道，解决频道存储的瓶颈； (4) 天线信号强度显示和快速选台功能，可以显示信号输入强度； (5) 初始频道设置功能，断电记忆，断电后机器有存储功能方便保存用户设置参数； (6) MCPC、SCPC 节目兼容，C/KU 波段兼容，可用于两个波段； (7) 所有功能可直接前面板操作，手动一样操作简便； (8) 预置国内上星的数字频道，用户可自行增减。
处理的方法
将电源插头在插座中插牢
屏幕显示“无 1。天线电缆未接好， 卫星信号” 2。卫星、转发器设定参数不对
1。接好 RF 输入电缆 2。正确设置卫星、转发器的参数
扬声器无声 音
1。音频电缆没有接好或接错 2。声音关闭 3。输出声道不对
1。对照接线图重新连接 2。打开声音，调节音量到合适大小 3。按<SOUND>，尝试其它声道模式
安徽省农村中小学现代远程教育工程
卫星接收机使用手册
安徽中科大讯飞信息科技有限公司
安徽省农村中小学现代远程教育工程
目录
1 设备简介 .......................................................................................................................... 2 2 产品介绍 .......................................................................................................................... 2
BZM55-C5V1中文资料
512at a D l a c i n a h c e M se r u t a eF Saving spaceHermetic sealed partsElectrical data identical with the devices BZT55..Series Fits onto SOD-323 / SOD-110 footprints Very sharp reverse characteristic Low reverse current level Very high stability Low noiseAvailable with tighter tolerances For voltage stabilizationCase: MicroMELFWeight: approx. 12 mgse i r e S 55M Z B se d o i D r e n e Z Wm 005:n o i t a p i s s i D r e w o P st l o V 57o t 4.2:e g n a R e g a t l o V r e n eZ sc i t s i r e t c a r a h C l a m r e h Td n a s g n i t a R m u m i x a M (T amb=25o C, unless otherwise specified)re t e m a r a P lo b m y S e u l a V t i n U )"s c i t s i r e t c a r a h C "e l b a T e e s (t n e r r u c r e n e Z I Z P t o t V /Z A m R t a n o i t a p i s s i d r e w o P A J h t <W /K 003P t o t 005Wm e r u t a r e p m e t n o i t c n u J T j 571oC e g n a r e r u t a r e p m e t e g a r o t S T g t s 571+o t 56-oCI t a e g a t l o v d r a w r o F F Am 002=V F 5.1V )1.g i F ,e u s s i t d r a h s s a l g -y x o p e n o d e t n u o m (t n e i b m a n o i t c n u J R θA J 005W /K 53(t n e i b m a n o i t c n u J u m m 9.0,d a l c r e p p o c m 2r e p a e r a r e p p o c ))e d o r t c e l e R θLJ 003W/K Package Dimensions in mm (inches)元器件交易网513sc i t s i r e t c a r a h C l a c i r t c e l E (T A =25o C unless otherwise noted)r e b m u n t r a P r o f C +V %5Z eg a t l o v r e n e Z )1V Z I @TZ )V (e c n a t s i s e r c i m a n y D t s e T tn e r r u c e r u t a r e p m e T t n e i c i f f e o c K T Z V )K /%(t s e T tn e r r u c t n e r r u c e g a k a e l e s r e v e R .n i M .x a M I t a T Z z H k 1=f r j z (Ω)I t a K Z z H k 1=f r j z (Ω)I T Z )A m (.n i M .x a M I K Z )A m (t a T b m a 52=o C I R (u )A t a T b m a 051=o C I R (u )A V t a R )s t l o V (4V 2C -55M Z B 82.265.258<006<590.0-60.0-105<001<17V 2C -55M Z B 05.209.258<006<590.0-60.0-101<05<10V 3C -55M Z B 08.202.309<006<580.0-50.0-14<04<13V 3C -55M Z B 01.305.309<006<580.0-50.0-12<04<16V 3C -55M Z B 04.308.309<006<580.0-50.0-12<04<19V 3C -55M Z B 07.301.409<006<560.0-30.0-12<04<13V 4C -55M Z B 00.406.409<006<550.0-20.0+11<02<17V 4C -55M Z B 04.400.508<006<520.0-20.0+15.0<01<11V 5C -55M Z B 08.404.506<055<550.0-50.0+11.0<2<16V 5C -55M Z B 02.500.604<054<530.0+60.0+11.0<2<12V 6C -55M Z B 08.506.601<002<530.0+70.0+11.0<2<28V 6C -55M Z B 04.602.78<051<530.0+70.0+11.0<2<35V 7C -55M Z B 00.709.77<05<530.0+80.0+11.0<2<52V 8C -55M Z B 07.707.87<05<530.0+90.0+11.0<2<2.61V 9C -55M Z B 05.806.901<05<530.0+1.0+11.0<2<8.601C -55M Z B 04.906.0151<07<530.0+11.0+11.0<2<5.711C -55M Z B 04.0106.1102<07<530.0+11.0+11.0<2<2.821C -55M Z B 04.1107.2102<09<530.0+11.0+11.0<2<1.931C -55M Z B 04.2101.4162<011<530.0+11.0+11.0<2<0151C -55M Z B 08.3106.5103<011<530.0+11.0+11.0<2<1161C -55M Z B 03.5101.7104<071<530.0+11.0+11.0<2<2181C -55M Z B 08.6101.9105<071<530.0+11.0+11.0<2<3102C -55M Z B 08.8102.1255<022<540.0+21.0+11.0<2<5122C -55M Z B 08.0203.3255<022<540.0+21.0+11.0<2<6142C -55M Z B 08.2206.5208<022<540.0+21.0+11.0<2<8172C -55M Z B 01.5209.8208<022<540.0+21.0+11.0<2<0203C -55M Z B 00.8200.2308<022<540.0+21.0+11.0<2<2233C -55M Z B 00.1300.5308<022<540.0+21.0+11.0<2<4263C -55M Z B 00.4300.8308<022<540.0+21.0+11.0<2<7293C -55M Z B 00.7300.1409<005<5.240.0+21.0+5.01.0<5<0334C -55M Z B 00.0400.6409<006<5.240.0+21.0+5.01.0<5<3374C -55M Z B 00.4400.05011<007<5.240.0+21.0+5.01.0<5<6315C -55M Z B 00.8400.45521<007<5.240.0+21.0+5.01.0<01<9365C -55M Z B 00.2500.06531<0001<5.240.0+21.0+5.01.0<01<3426C -55M Z B 00.8500.66051<0001<5.240.0+21.0+5.01.0<01<7486C -55M Z B 00.4600.27002<0001<5.240.0+21.0+5.01.0<01<1557C -55M Z B 00.0700.97052<0051<5.240.0+21.0+5.01.0<01<65Notes:1. t p < 10 ms, T/t p > 1000.*) Additionnal measurement of Voltage group 9V1 to 75 at 95 % V zmin < 35 nA at T j 25 o C元器件交易网514sc i t s i r e t c a r a h C l a c i r t c e l E (T A =25o C unless otherwise noted)r e b m u n t r a P r o f B +V %2Z eg a t l o v r e n e Z )1V Z I @TZ )V (e c n a t s i s e r c i m a n y D t s e T tn e r r u c e r u t a r e p m e T t n e i c i f f e o c K T Z V )K /%(t s e T tn e r r u c t n e r r u c e g a k a e l e s r e v e R .n i M .x a M I t a T Z z H k 1=f r j z (Ω)I t a K Z z H k 1=f r j z (Ω)I T Z )A m (.n i M .x a M I K Z )A m (t a T b m a 52=o C I R (u )A t a T b m a 051=o C I R (u )A V t a R )s t l o V (4V 2B -55M Z B 53.254.258<006<590.0-60.0-105<001<17V 2B -55M Z B 56.267.258<006<590.0-60.0-101<05<10V 3B -55M Z B 49.260.309<006<580.0-50.0-14<04<13V 3B -55M Z B 42.363.309<006<580.0-50.0-12<04<16V 3B -55M Z B 25.386.309<006<580.0-50.0-12<04<19V 3B -55M Z B 28.389.309<006<560.0-30.0-12<04<13V 4B -55M Z B 22.483.409<006<550.0-20.0+11<02<17V 4B -55M Z B 6.48.408<006<520.0-20.0+15.0<01<11V 5B -55M Z B 00.502.506<055<550.0-50.0+11.0<2<16V 5B -55M Z B 84.527.504<054<530.0+60.0+11.0<2<12V 6B -55M Z B 80.623.601<002<530.0+70.0+11.0<2<28V 6B -55M Z B 66.649.68<051<530.0+70.0+11.0<2<35V 7B -55M Z B 53.756.77<05<530.0+80.0+11.0<2<52V 8B -55M Z B 40.863.87<05<530.0+90.0+11.0<2<2.61V 9B -55M Z B 29.882.901<05<530.0+1.0+11.0<2<8.601B -55M Z B 08.902.0151<07<530.0+11.0+11.0<2<5.711B -55M Z B 87.0122.1102<07<530.0+11.0+11.0<2<2.821B -55M Z B 67.1142.2102<09<530.0+11.0+11.0<2<1.931B -55M Z B 47.2162.3162<011<530.0+11.0+11.0<2<0151B -55M Z B 07.4103.5103<011<530.0+11.0+11.0<2<1161B -55M Z B 07.5103.6104<071<530.0+11.0+11.0<2<2181B -55M Z B 46.7163.8105<071<530.0+11.0+11.0<2<3102B -55M Z B 06.9104.0255<022<540.0+21.0+11.0<2<5122B -55M Z B 55.1254.2255<022<540.0+21.0+11.0<2<6142B -55M Z B 05.3205.4208<022<540.0+21.0+11.0<2<8172B -55M Z B 04.6206.7208<022<540.0+21.0+11.0<2<0203B -55M Z B 04.9206.0308<022<540.0+21.0+11.0<2<2233B -55M Z B 04.2306.3308<022<540.0+21.0+11.0<2<4263B -55M Z B 03.5307.6308<022<540.0+21.0+11.0<2<7293B -55M Z B 02.8308.9309<005<5.240.0+21.0+11.0<5<0334B -55M Z B 01.2409.3409<006<5.240.0+21.0+5.01.0<5<3374B -55M Z B 01.6409.74011<007<5.240.0+21.0+5.01.0<5<6315B -55M Z B 00.0500.25521<007<5.240.0+21.0+5.01.0<01<9365B -55M Z B 09.4501.75531<0001<5.240.0+21.0+5.01.0<01<3426B -55M Z B 08.0602.36051<0001<5.240.0+21.0+5.01.0<01<7486B -55M Z B 06.6604.96002<0001<5.240.0+21.0+5.01.0<01<1557B -55M Z B 05.3705.67052<0051<5.240.0+21.0+5.01.0<01<65Notes:1. t p < 10 ms, T/t p > 1000.*) Additionnal measurement of Voltage group 9V1 to 75 at 95 % V zmin < 35 nA at T j 25 o C元器件交易网515SE V R U C C I T S I R E T C A R A H C D N A S G N I T A R (T A = 25oC unless otherwise noted)元器件交易网516SE V R U C C I T S I R E T C A R A H C D N A S G N I T A R (T A = 25oC unless otherwise noted)元器件交易网517SE V R U C C I T S I R E T C A R A H C D N A S G N I T A R (T A = 25oC unless otherwise noted)元器件交易网。
BZV55C中文资料
Pb RoHSCOMPLIANCEBZV55C SERIES 0.5 Watts Hermetically Sealed GlassZener Voltage RegulatorsFeatures Zener voltage range 2.0 to 75 voltsLL-34(Mini-MELF) packageSurface device type mountingHermetically sealed glassCompression Bonded ConstructionAll external surfaces are corrosionresistant and terminals are readilysolderableRoHS compliantMatte Tin(Sn) lead finishBlue color band indicates negative polarityMINI-MELFDimensions in inches and (millimeters)Maximum Ratings and Electrical CharacteristicsRating at 25o C ambient temperature unless otherwise specified.Type Number Symbol Value Units Power Dissipation Ptot500 mW Operating and Storage Temperature Range T J, T STG-65 to + 200 o CNotes: These ratings are limiting values above which the serviceability of the diode may be impairedVersion: B07Figure 1. Total Power Dissipation vs. Ambient TemperatureFigure 2. Typical Change of Working Voltage under OperatingConditions at T amb =25°CFigure 3. Typical Change of Working Voltage vs. JunctionTemperature1201600100300400500600P t o t - T o t a l P o w e r D i s s i p a t i o n (m W )T am b - Am b ient Temperat ure (°C)20020080401015201101001000V Z - V o l t a g e C h a n g e (m V )V Z - Z-V oltage (V )5- 60601201800.80.91.01.11.21.3V Z t n - R e l a t i v e V o l t a g e C h an g eT j - J u nction Temperat u re (°C)0Figure 4. Temperature Coefficient of Vz vs. Z-VoltageFigure 5. Diode Capacitance vs. Z-VoltageFigure 6. Forward Current vs. Forward Voltage30- 5051015V Z - Z-V oltage (V )504010200T K V Z - T e m p e r a t u r e C o e f f i c i e n t o f V Z (10-4/K )101550C D - D i o d e C a p a c i t a n c e (p F )V Z - Z-V oltage (V )20500.20.40.60.80.0010.010.1110100I F - F o r w a r d C u r r e n t (m A )V F - For w ard V oltage (V )Figure 7. Z-Current vs. Z-VoltageFigure 8. Z-Current vs. Z-Voltage820020406080I Z - Z -C u r r e n t (m A )4612V Z - Z-V oltage (V )152025300I Z - Z -C u r r e n t (m A )V Z - Z-Voltage (V )Figure 9. Differential Z-Resistance vs. Z-Voltage051015201101001000(Ω)V Z - Z-V oltage (V )r Z - D i f f e r e n t i a l Z -R e s i s t a n c e Figure 10. Thermal ResponseZ t h p - T h e r m a l R e s i s t a n c e f o r P u l s e C o n d . (K W )t P - P u lse Length (ms)10-1100101102ELECTRICAL CHARACTERISTICS (TA=25O C unless otherwise noted)Type Z ZT @ I ZT I R @ V RNumber V Z V Z I ZT Ohms I ZK Z ZK @ I ZK uA V R Min (V)Max (V)mA Max mA Ohms Max V BZV55C2V0 1.88 2.115100 1.060050 1.0BZV55C2V2 2.08 2.335100 1.060050 1.0BZV55C2V4 2.28 2.56585 1.060050 1.0BZV55C2V7 2.51 2.89585 1.060010 1.0BZV55C3V0 2.8 3.2585 1.06004 1.0BZV55C3V3 3.1 3.5585 1.06002 1.0BZV55C3V6 3.4 3.8585 1.06002 1.0BZV55C3V9 3.7 4.1585 1.06002 1.0BZV55C4V3 4.0 4.6575 1.06001 1.0BZV55C4V7 4.4 5.0560 1.06000.5 1.0BZV55C5V1 4.8 5.4535 1.05500.1 1.0BZV55C5V6 5.2 6.0525 1.04500.1 1.0BZV55C6V2 5.8 6.6510 1.02000.1 2.0BZV55C6V8 6.47.258 1.01500.1 3.0BZV55C7V57.07.957 1.0500.1 5.0BZV55C8V27.78.757 1.0500.1 6.2BZV55C9V18.59.6510 1.0500.1 6.8BZV55C109.410.6515 1.0700.17.5BZV55C1110.411.6520 1.0700.18.2BZV55C1211.412.7520 1.0900.19.1BZV55C1312.414.1526 1.01100.110BZV55C1513.815.6530 1.01100.111BZV55C1615.317.1540 1.01700.112BZV55C1816.819.1550 1.01700.113BZV55C2018.821.1555 1.02200.115BZV55C2220.823.3555 1.02200.116BZV55C2422.825.6580 1.02200.118BZV55C2725.128.9280 1.02200.120BZV55C302832280 1.02200.122BZV55C333135280 1.02200.124BZV55C363438280 1.02200.127BZV55C3937412900.55000.128BZV55C4340462900.56000.132BZV55C47445021100.57000.135BZV55C51485421250.57000.138BZV55C56526021350.510000.142BZV55C625866 2.51500.510000.147BZV55C686472 2.51600.510000.151BZV55C7570802.51700.510000.156VF Forward Voltage = 1.0v Maximum @ IF=100mA for all types.Notes: 1. The type numbers listed have zener voltage min/max limits as shown.2. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rams value equal to 10% of the dc zener current (I ZT or I ZK ) is superimposed to I ZT or I ZK .Version: B 07V Z @ I ZT (Volts)。
BZX84C18-V中文资料
Document Number Small Signal Zener DiodesFeatures•These diodes are also available in other case styles and other configurationsincluding: the SOD-123 case with type designation BZT52 series, the dual zenerdiode common anode configuration in the SOT-23case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23series.•The Zener voltages are graded according to the international E 24 standard. Standard Zener volt-age tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance.•Silicon Planar Power Zener Diodes •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECWeight: approx. 8.8 mgPackaging Codes/Options:GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/boxAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Device on fiberglass substrate, see layout.Thermal CharacteristicsT amb = 25°C, unless otherwise specified1)Device on fiberglass substrate, see layout.ParameterT est condition Symbol Value Unit Power dissipationP tot300 1)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 420 1)°C/W Junction temperature T j 150°C Storage temperature rangeT S- 65 to + 150°CElectrical CharacteristicsPartnumber MarkingCodeZenerVoltageRangeDynamic Resistance T estCurrentTemp.Coefficientof ZenerVoltageTestCurrentReverse LeakageCurrentV Z @ I ZT1r zj @ I ZT1r zj @ I ZT2I ZT1αVZ @ I ZT1I ZT2I R@ V R VΩmA10-4/°C mAµA Vmin max min maxBZX84C2V4-V Z11 2.2 2.670 (≤100)2755-9.0-4.01501 BZX84C2V7-V Z12 2.5 2.975 (≤100)300 (≤600)5-9.0-4.01201 BZX84C3V0-V Z13 2.8 3.280 (≤95)325 (≤600)5-9.0-3.01101 BZX84C3V3-V Z14 3.1 3.585 (≤95)350 (≤600)5-8.0-3.0151 BZX84C3V6-V Z15 3.4 3.885 (≤90)375 (≤600)5-8.0-3.0151 BZX84C3V9-V Z16 3.7 4.185 (≤90)400 (≤600)5-7.0-3.0131 BZX84C4V3-V Z174 4.680 (≤90)410 (≤600)5-6.0-1.0131 BZX84C4V7-V Z1 4.4550 (≤80)425 (≤500)5-5.0+2.0132 BZX84C5V1-V Z2 4.8 5.440 (≤60)400 (≤480)5-3.0+4.0122 BZX84C5V6-V Z3 5.2615 (≤40)80 (≤400)5-2.0+6.0112 BZX84C6V2-V Z4 5.8 6.6 6.0 (≤10)40 (≤150)5-1.0+7.0134 BZX84C6V8-V Z5 6.47.2 6.0 (≤15)30 (≤80)5+2.0+7.0124 BZX84C7V5-V Z677.9 6.0 (≤15)30 (≤80)5+3.0+7.0115 BZX84C8V2-V Z77.78.7 6.0 (≤15)40 (≤80)5+4.0+7.010.75 BZX84C9V1-V Z88.59.6 6.0 (≤15)40 (≤100)5+5.0+8.010.56 BZX84C10-V Z99.410.68.0 (≤20)50 (≤150)5+5.0+8.010.27 BZX84C11-V Y110.411.610 (≤20)50 (≤150)5+5.0+9.010.18 BZX84C12-V Y211.412.710 (≤25)50 (≤150)5+6.0+9.010.18 BZX84C13-V Y312.414.110 (≤30)50 (≤170)5+7.0+9.010.18 BZX84C15-V Y413.815.610 (≤30)50 (≤200)5+7.0+9.010.050.7 V Znom.BZX84C16-V Y515.317.110 (≤40)50 (≤200)5+8.0+9.510.050.7 V Znom.BZX84C18-V Y616.819.110 (≤45)50 (≤225)5+8.0+9.510.050.7 V Znom.BZX84C20-V Y718.821.215 (≤55)60 (≤225)5+8.0+1010.050.7 V Znom.BZX84C22-V Y820.823.320 (≤55)60 (≤250)5+8.0+1010.050.7 V Znom.BZX84C24-V Y922.825.625 (≤70)60 (≤250)5+8.0+1010.050.7 V Znom.BZX84C27-V Y1025.128.925 (≤80)65 (≤300)2+8.0+100.50.050.7 V Znom.BZX84C30-V Y11283230 (≤80)70 (≤300)2+8.0+100.50.050.7 V Znom.BZX84C33-V Y12313535 (≤80)75 (≤325)2+8.0+100.50.050.7 V Znom.BZX84C36-V Y13343835 (≤90)80 (≤350)2+8.0+100.50.050.7 V Znom.BZX84C39-V Y14374140 (≤130)80 (≤350)2+10+120.50.050.7 V Znom.BZX84C43-V Y15404645 (≤150)85 (≤375)2+10+120.50.050.7 V Znom.BZX84C47-V Y16445050 (≤170)85 (≤375)2+10+120.50.050.7 V Znom.BZX84C51-V Y17485460 (≤180)85 (≤400)2+10+120.50.050.7 V Znom.BZX84C56-V Y18526070 (≤200)100 (≤425)2+9.0+110.50.050.7 V Znom.BZX84C62-V Y19586680 (≤215)100 (≤450)2+9.0+120.50.050.7 V Znom.BZX84C68-V Y20647290 (≤240)150 (≤475)2+10+120.50.050.7 V Znom.BZX84C75-V Y21707995 (≤255)170 (≤500)2+10+120.50.050.7 V Znom. Document Number 85763Document Number Electrical CharacteristicsPartnumberMarking CodeZener Voltage Range Dynamic ResistanceTest CurrentT emp. Coefficient of Zener Voltage T est CurrentReverse LeakageCurrentV Z @ I ZT1r zj @ I ZT1r zj @ I ZT2I ZT1αVZ @ I ZT1I ZT2I R @ V R V ΩmA10-4/°C mAµAVminmax min max BZX84B2V4-V Z50 2.35 2.4570 (≤100)2755-9-41501BZX84B2V7-V Z51 2.65 2.7575 (≤100)300 (≤600)5-9-41201BZX84B3V0-V Z52 2.94 3.0680 (≤95)325 (≤600)5-9-31101BZX84B3V3-V Z53 3.23 3.3785 (≤95)350 (≤600)5-8-3151BZX84B3V6-V Z54 3.53 3.6785 (≤90)375 (≤600)5-8-3151BZX84B3V9-V Z55 3.82 3.9885 (≤90)400 (≤600)5-7-3131BZX84B4V3-V Z56 4.21 4.3980 (≤90)410 (≤600)5-6-1131BZX84B4V7-V Z57 4.61 4.7950 (≤80)425 (≤500)5-52132BZX84B5V1-V Z585 5.240 (≤60)400 (≤480)5-34122BZX84B5V6-V Z59 5.49 5.7115 (≤40)80 (≤400)5-26112BZX84B6V2-V Z60 6.08 6.32 6.0 (≤10)40 (≤150)5-17134BZX84B6V8-V Z61 6.66 6.94 6.0 (≤15)30 (≤80)527124BZX84B7V5-V Z627.357.65 6.0 (≤15)30 (≤80)537115BZX84B8V2-V Z638.048.36 6.0 (≤15)40 (≤80)54710.75BZX84B9V1-V Z648.929.28 6.0 (≤15)40 (≤100)55810.56BZX84B10-V Z659.810.28.0 (≤20)50 (≤150)55810.27BZX84B11-V Z6610.811.210 (≤20)50 (≤150)55910.18BZX84B12-V Z6711.812.210 (≤25)50 (≤150)56910.18BZX84B13-V Z6812.713.310 (≤30)50 (≤170)57910.18BZX84B15-V Z6914.715.310 (≤30)50 (≤200)57910.050.7 V Znom.BZX84B16-V Z7015.716.310 (≤40)50 (≤200)589.510.050.7 V Znom.BZX84B18-V Z7117.618.410 (≤45)50 (≤225)589.510.050.7 V Znom.BZX84B20-V Z7219.620.415 (≤55)60 (≤225)581010.050.7 V Znom.BZX84B22-V Z7321.622.420 (≤55)60 (≤250)581010.050.7 V Znom.BZX84B24-V Z7423.524.525 (≤70)60 (≤250)581010.050.7 V Znom.BZX84B27-V Z7526.527.525 (≤80)65 (≤300)28100.50.050.7 V Znom.BZX84B30-V Z7629.430.630 (≤80)70 (≤300)28100.50.050.7 V Znom.BZX84B33-V Z7732.333.735 (≤80)75 (≤325)28100.50.050.7 V Znom.BZX84B36-V Z7835.336.735 (≤90)80 (≤350)28100.50.050.7 V Znom.BZX84B39-V Z7938.239.840 (≤130)80 (≤350)210120.50.050.7 V Znom.BZX84B43-V Z8042.143.945 (≤150)85 (≤375)210120.50.050.7 V Znom.BZX84B47-V Z8146.147.950 (≤170)85 (≤375)210120.50.050.7 V Znom.BZX84B51-V Z82505260 (≤180)85 (≤400)210120.50.050.7 V Znom.BZX84B56-V Z8354.957.170 (≤200)100 (≤425)29110.50.050.7 V Znom.BZX84B62-V Z8460.863.280 (≤215)100 (≤450)29120.50.050.7 V Znom.BZX84B68-V Z8566.669.490 (≤240)150 (≤475)210120.50.050.7 V Znom.BZX84B75-VZ8673.576.595 (≤255)170 (≤500)210120.50.050.7 V Znom. Document Number 85763Typical Characteristics (Tamb = 25 °C unless otherwise specified)Figure 1. Forward characteristics Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure3. Pulse Thermal Resistance vs. Pulse Duration1811418115Figure 4. Dynamic Resistance vs. Zener CurrentFigure 5. Capacitance vs. Zener VoltageFigure6. Dynamic Resistance vs. Zener Current1811718118Document Number Figure 7. Dynamic Resistance vs. Zener CurrentFigure 8. Thermal Differential Resistance vs. Zener Voltage Figure9. Dynamic Resistance vs. Zener Voltage18120Figure 10. Temperature Dependence of Zener Voltage vs. ZenerVoltageFigure 11. Change of Zener Voltage vs. Junction TemperatureFigure 12. Temperature Dependence of Zener Voltage vs. ZenerVoltage18124°C18136 Document Number 85763Figure 13. Change of Zener Voltage vs. Junction TemperatureFigure 14. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltageFigure 15. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltage181261813718138Document Number Figure 16. Breakdown CharacteristicsFigure17. Breakdown Characteristics1811118112 Document Number 85763Layout for R Theta;JA testThickness: Fiberglass 0.059 in. (1.5 mm)Copper leads 0.012 in. (0.3 mm)Figure18. Breakdown Characteristics18113Package Dimensions in mm (Inches)Document Number Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85763。
BZV55B5V1中文资料
Pb RoHSCOMPLIANCEBZV55B SERIES 0.5 Watts Hermetically Sealed GlassZener Voltage RegulatorsFeatures Zener voltage range 2.0 to 75 voltsLL-34(Mini-MELF) packageSurface device type mountingHermetically sealed glassCompression Bonded ConstructionAll external surfaces are corrosionresistant and terminals are readilysolderableRoHS compliantMatte Tin(Sn) lead finishBlue color band indicates negative polarityMINI-MELFDimensions in inches and (millimeters)Maximum Ratings and Electrical CharacteristicsRating at 25o C ambient temperature unless otherwise specified.Type Number Symbol Value Units Power Dissipation Ptot500 mW Operating and Storage Temperature Range T J, T STG-65 to + 200 o CNotes: These ratings are limiting values above which the serviceability of the diode may be impairedVersion: B07Figure 1. Total Power Dissipation vs. Ambient TemperatureFigure 2. Typical Change of Working Voltage under OperatingConditions at T amb =25°CFigure 3. Typical Change of Working Voltage vs. JunctionTemperature1201600100300400500600P t o t - T o t a l P o w e r D i s s i p a t i o n (m W )T am b - Am b ient Temperat ure (°C)20020080401015201101001000V Z - V o l t a g e C h a n g e (m V )V Z - Z-V oltage (V )5- 60601201800.80.91.01.11.21.3V Z t n - R e l a t i v e V o l t a g e C h an g eT j - J u nction Temperat u re (°C)0Figure 4. Temperature Coefficient of Vz vs. Z-VoltageFigure 5. Diode Capacitance vs. Z-VoltageFigure 6. Forward Current vs. Forward Voltage30- 5051015V Z - Z-V oltage (V )504010200T K V Z - T e m p e r a t u r e C o e f f i c i e n t o f V Z (10-4/K )101550C D - D i o d e C a p a c i t a n c e (p F )V Z - Z-V oltage (V )20500.20.40.60.80.0010.010.1110100I F - F o r w a r d C u r r e n t (m A )V F - For w ard V oltage (V )Figure 7. Z-Current vs. Z-VoltageFigure 8. Z-Current vs. Z-Voltage820020406080I Z - Z -C u r r e n t (m A )4612V Z - Z-V oltage (V )152025300I Z - Z -C u r r e n t (m A )V Z - Z-Voltage (V )Figure 9. Differential Z-Resistance vs. Z-Voltage051015201101001000(Ω)V Z - Z-V oltage (V )r Z - D i f f e r e n t i a l Z -R e s i s t a n c e Figure 10. Thermal ResponseZ t h p - T h e r m a l R e s i s t a n c e f o r P u l s e C o n d . (K W )t P - P u lse Length (ms)10-1100101102ELECTRICAL CHARACTERISTICS (TA=25O C unless otherwise noted)Type Z ZT @ I ZT IR @ VR Number V Z V Z I ZT Ohms I ZK Z ZK @ I ZK uA VR Min (V)Max (V)mA Max mA Ohms MaxV BZV55B2V0 1.96 2.045100 1.060050 1.0BZV55B2V2 2.16 2.245100 1.060050 1.0BZV55B2V4 2.35 2.45585 1.060050 1.0BZV55B2V7 2.65 2.75585 1.060010 1.0BZV55B3V0 2.94 3.06585 1.06004 1.0BZV55B3V3 3.23 3.37585 1.06002 1.0BZV55B3V6 3.53 3.67585 1.06002 1.0BZV55B3V9 3.82 3.98585 1.06002 1.0BZV55B4V3 4.21 4.39575 1.06001 1.0BZV55B4V7 4.61 4.79560 1.06000.5 1.0BZV55B5V1 5.00 5.2535 1.05500.1 1.0BZV55B5V6 5.49 5.71525 1.04500.1 1.0BZV55B6V2 6.08 6.32510 1.02000.1 2.0BZV55B6V8 6.66 6.9458 1.01500.1 3.0BZV55B7V57.357.6557 1.0500.1 5.0BZV55B8V28.048.3657 1.0500.1 6.2BZV55B9V18.929.28510 1.0500.1 6.8BZV55B109.8010.2515 1.0700.17.5BZV55B1110.4011.22520 1.0700.18.2BZV55B1211.4012.24520 1.0900.19.1BZV55B1312.7413.26526 1.01100.110BZV55B1514.7015.30530 1.01100.111BZV55B1615.6816.32540 1.01700.112BZV55B1817.6418.36550 1.01700.113BZV55B2019.6020.40555 1.02200.115BZV55B2221.5622.44555 1.02200.116BZV55B2423.5224.48580 1.02200.118BZV55B2726.4627.54280 1.02200.120BZV55B3029.4030.60280 1.02200.122BZV55B3332.3433.66280 1.02200.124BZV55B3635.2836.72280 1.02200.127BZV55B3938.2239.782900.55000.128BZV55B4342.1443.862900.56000.132BZV55B4746.0647.9421100.57000.135BZV55B5149.9852.0221250.57000.138BZV55B5654.8857.1221350.510000.142BZV55B6260.7663.24 2.51500.510000.147BZV55B6866.6469.36 2.51600.510000.151BZV55B7573.5076.502.51700.510000.156VF Forward Voltage = 1.0v Maximum @ IF=100mA for all types.Notes: 1. The type numbers listed have zener voltage min/max limits as shown.2. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (I ZT or I ZK ) is superimposed to I ZT or I ZK .Version: B 07(Volts)V Z @ I ZT。
BZX84C2V7V中文资料
SILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageLow voltage general purpose voltage regulator diode ABSOLUTE MAXIMUM RATINGS (T a =25°C)UNIT %Repetitive Peak Forward Current mA Repetitive Peak Working Current mA mW mW °C °CTHERMAL RESISTANCE K/W* Device mounted on a ceramic alumna** Device mounted on an FR5 printed circuit boardELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficient ResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mA at I Z test=1mAmin max min max max Max (V)BZX84C2V4 2.20 2.60 -3.560050 1.0Z11BZX84C2V72.50 2.90 -3.560020 1.0Z12BZX84C3V0 2.80 3.20 -3.560010 1.0Z13BZX84C3V3 3.10 3.50 -3.5600 5.0 1.0Z14BZX84C3V6 3.40 3.80 -3.5600 5.0 1.0Z15BZX84C3V9 3.70 4.10-3.56003.0 1.0Z16BZX84C4V34.00 4.60 -3.5600 3.0 1.0Z17BZX84C4V7 4.40 5.00 -3.5 0.2500 3.0 2.0Z1BZX84C5V1 4.80 5.40 -2.7 1.2480 2.0 2.0Z2BZX84C5V6 5.20 6.00 -2.0 2.5400 1.0 2.0Z3BZX84C6V2 5.80 6.60 0.4 3.7150 3.0 4.0Z4BZX84C6V8 6.407.20 1.2 4.580 2.0 4.0Z5BZX84C7V57.007.90 2.5 5.380 1.0 5.0Z6BZX84C8V27.708.70 3.2 6.2800.7 5.0Z7BZX84C9V18.509.60 3.8 7.01000.5 6.0Z8BZX84C109.4010.604.5 8.01500.27.0Z9BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms1515152060401015909090801001009595 + 5VALUE max I ZRM Storage Temperature T stg Junction to Ambient*R th (j-a)DESCRIPTIONI FRM Working Voltage Tolerance Power Dissipation upto T a =25ºC SYMBOL *P D ***V Z ( + 5%)(V)at I Z test=5mA Resistance rdiff (Ω)at I Z test=5mA250420300- 65 to +150250Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAVoltage 150250Differential Working Power Dissipation upto T c =25ºC **P D Junction Temperature T j Pin Configuration1 = A N ODE2 = N C3 =CATHODE12Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficientResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mAat I Z test=1mA min max min max max Max (V)BZX84C1110.4011.60 5.4 9.01500.18Y1BZX84C1211.4012.70 6.0 101500.18Y2BZX84C1312.4014.10 7.0 111700.18Y3BZX84C1513.8015.60 9.2 132000.0510.5Y4BZX84C1615.3017.10 10.4 142000.0511.2Y5BZX84C1816.8019.10 12.4 162250.0512.6Y6BZX84C2018.8021.20 14.4 182250.0514.0Y7BZX84C2220.8023.30 16.4 202500.0515.4Y8BZX84C2422.8025.60 18.4 222500.0516.8Y9at I Z Test=2mA at I Z Test=0.5mABZX84C2725.1028.90 21.4 25.33000.0518.9Y10BZX84C3028.0032.00 24.4 29.43000.0521.0Y11BZX84C3331.0035.00 27.4 33.43250.0523.1Y12BZX84C3634.0038.00 30.4 37.43500.0525.2Y13BZX84C3937.0041.00 33.4 41.23500.0527.3Y14BZX84C4340.0046.00 37.6 46.63750.0530.1Y15BZX84C4744.0050.00 42.0 51.83750.0532.9Y16BZX84C5148.0054.00 46.6 57.24000.0535.7Y17BZX84C5652.0060.00 52.2 63.84250.0539.2Y18BZX84C6258.0066.00 58.8 71.64500.0543.4Y19BZX84C6864.0072.00 65.6 79.84750.0547.6Y20BZX84C7570.0079.0073.4 88.65000.0552.5Y21BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms2002152402551301501701808080908025303070at I Z test=5mA at I Z test=5mA max at I Z test=2mAat I Z Test=2mA4045555520Resistance ***V Z ( + 5%)rdiff (Ω)(V)Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAWorking Differential Voltage Pin Configuration1 = A N ODE2 = N C3 =CATHODE12BZX84C2V4 to 75V SOT-23Formed SMD PackageSOT-23 Package Reel InformationReel specification for W" Packing (13" reel)BZX84C2V4_75V Rev_060506ESOT-23 Formed SMD PackageTape Specification for SOT-23 Surface Mount DeviceS O T -23 T &R3K /reel 10K /reel136 g m /3K p c s 415 g m /10K p c s3" x 7.5" x 7.5"9" x 9" x 9"13" x 13" x 0.5"12 K 51 K 10 K17" x 15" x 13.5"19" x 19" x 19"17" x 15" x 13.5"192 K 408 K 300 K12 k g s 28 k g s 16 k g sPACKAGEN e t W e i g h t /Q t y DetailsS T A N D A R D PACKI N N E R C A R T O N B O XQ t y O U T E R C A R T O N B O XQ t y G r W t SizeSizePacking Detail±0.0114.47.9 – 10.9T R A I L E RF I X I N GT A P EL E A D E R9.2±0.5MAXNOTES:No. of Devices8mm Tape Size of Reel 330 mm (13")10,000 Pcs 8mm Tape Size of Reel 180 mm (7")3,000 Pcs1.The bandolier of 330 mm reel contains at least 10,000 devices.2.The bandolier of 180 mm reel contains at least 3,000 devices.3.No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.15 empty compartments for 180 mm reel.4.Three consecutive empty places might be found provided this gap is followed by 6 consecutive devices.5.The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330 mm).In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At the end of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.3.15Customer Notes BZX84C2V4 to 75VSOT-23Formed SMD Package1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to pleasedispose as per prevailing Environmental Legislation of their Country.2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical andElectronic Equipment (WEEE).BZX84C2V4_75V Rev_060506E DisclaimerThe product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product;neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems.CDIL customers selling these products(either as individual Semiconductor Devices or incorporated in their end products),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119email@ 。
埃森电子系统55型号预制分布板的说明说明书
Eaton 1967805I-32G1400-0S-44. S55, 1f, MCB 3 gr 2 ALS 44General specificationsEaton Systeem 55 compact distribution board pre-wired 1967805I-32G1400-0S-448711426213531292 mm140 mm 234 mm1.69 kg EN 61439-3Product Name Catalog Number Model CodeEAN Product Length/Depth Product Height Product Width Product Weight Certifications220 mmNoneSurface mounted (plaster)Miniature- / earth leakage circuit breaker 3312None40 ANone1IP3X (housing/enclosure)IP3X eaton-insulated-boards-systeem55-lv-systems-dimensions-002.eps IL014053ZUEnclosure heightCooker groupNumber of poles at main switchNumber of switches (earth leakage 300 mA) Mounting methodProtected byNumber of groupsNumber of light groups protected by 30 mA Number of circuit breakers (earth leakage) Width in number of modular spacings Fitted with:Number of arc fault detection devices AFDD Current rating of RCD and main switch Functional groupNumber of phasesNumber of outgoing waysDegree of protection DrawingsInstallation instructionsSpecial featuresGroup cabinet Group cabinets for residential construction, (retail) business, offices and practice rooms according to NEN 1010 with earth leakage protection of all groups unless otherwise specified Snap-in, robust plastic mounting frame with integrated DIN profile(s) Integrated, divided pipe entry with 17 pipe entry openings diameter 16/19 mm, of which 10 in the lower row Lid with manual sealable quick fasteners Standard connection block for phase and zero Connection block (= option) for outgoing groups of lower row components number of poles and nominal current main switch and earth leakage switches the sameNumber of groups (total)3ColorBlack RAL 9005 (bins and lid)Light gray (RAL 7035, mounting frame)Built-in depth - max0 mmFunctionsExtension possibleMaterialThermoplastic plasticNumber of direct groupsCurrent rating of main switch0 AEnclosure materialPlasticBuilt-in depth - min0 mmTypeGroup enclosure Group enclosures with miniature circuit breakersNumber of switches (earth leakage 30 mA)2Number of groups behind earth leakage switch3Main switchNoneEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All Rights Reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmedia。
bzv55
DATA SHEETProduct specificationSupersedes data of 1999May 212002Feb 28BZV55 seriesVoltage regulator diodes1/3 page (Datasheet)M3D054Voltage regulator diodesBZV55 seriesFEATURES•Total power dissipation: max.500mW •Two tolerance series:±2%, and approx.±5%•Working voltage range: nom.2.4to 75V (E24range)•Non-repetitive peak reverse power dissipation:max.40W.APPLICATIONS•Low voltage stabilizers or voltage references.DESCRIPTIONLow-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The diodes are available in the normalized E24±2% (BZV55-B) and approx.±5% (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4to 75V.columnsMAM215kaFig.1Simplified outline (SOD80C) and symbol.The cathode is indicated by a yellow band.LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).Note1.Device mounted on a ceramic substrate of 10×10×0.6mm.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT I F continuous forward current −250mAI ZSM non-repetitive peak reverse current t p =100µs; square wave;T j =25°C prior to surge see Tables 1and 2A P tot total power dissipationT amb ≤50°C; note 1−400mW tie-point ≤50°C; note 1−500mW P ZSM non-repetitive peak reverse power dissipationt p =100µs; square wave;T j =25°C prior to surge; see Fig.3−40W T stg storage temperature −65+200°C T j junction temperature−65+200°CVoltage regulator diodes BZV55 seriesELECTRICAL CHARACTERISTICSTotal BZV55-B and BZV55-C seriesT j=25°C; unless otherwise specified.SYMBOL PARAMETER CONDITIONS MAX.UNIT V F forward voltage I F=10mA; see Fig.40.9V I R reverse currentBZV55-B/C2V4V R=1V50µABZV55-B/C2V7V R=1V20µABZV55-B/C3V0V R=1V10µABZV55-B/C3V3V R=1V5µABZV55-B/C3V6V R=1V5µABZV55-B/C3V9V R=1V3µABZV55-B/C4V3V R=1V3µABZV55-B/C4V7V R=2V3µABZV55-B/C5V1V R=2V2µABZV55-B/C5V6V R=2V1µABZV55-B/C6V2V R=4V3µABZV55-B/C6V8V R=4V2µABZV55-B/C7V5V R=5V1µABZV55-B/C8V2V R=5V700nABZV55-B/C9V1V R=6V500nABZV55-B/C10V R=7V200nABZV55-B/C11V R=8V100nABZV55-B/C12V R=8V100nABZV55-B/C13V R=8V100nABZV55-B/C15to BZV55-B/C75V R=0.7V Znom50nA4Product specificationBZV55 series3V3 3.23 3.37 3.1 3.53506008595−3.5−2.40450 6.03V6 3.53 3.67 3.4 3.83756008590−3.5−2.40450 6.03V9 3.82 3.98 3.7 4.14006008590−3.5−2.50450 6.04V3 4.21 4.39 4.0 4.64106008090−3.5−2.50450 6.04V7 4.61 4.79 4.4 5.04255005080−3.5−1.40.2300 6.05V1 5.00 5.20 4.8 5.44004804060−2.7−0.8 1.2300 6.05V6 5.49 5.71 5.2 6.0804001540−2.0 1.2 2.5300 6.06V2 6.08 6.32 5.8 6.6401506100.4 2.3 3.7200 6.06V8 6.66 6.94 6.47.23080615 1.2 3.0 4.5200 6.07V57.357.657.07.93080615 2.5 4.0 5.3150 4.08V28.048.367.78.74080615 3.2 4.6 6.2150 4.09V18.929.288.59.640100615 3.8 5.57.0150 3.0109.8010.209.410.650150820 4.5 6.48.090 3.01110.8011.2010.411.6501501020 5.47.49.085 2.51211.8012.2011.412.7501501025 6.08.410.085 2.51312.7013.3012.414.150********.09.411.080 2.51514.7015.3013.815.65020010309.211.413.075 2.01615.7016.3015.317.150200104010.412.414.075 1.51817.6018.4016.819.150225104512.414.416.070 1.52019.6020.4018.821.260225155512.315.618.060 1.52221.6022.4020.823.360250205514.117.620.060 1.252423.5024.5022.825.660250257015.919.622.0551.255Product specificationBZV55 series3635.3036.7034.038.080350359026.031.837.4450.83938.2039.8037.041.0803504013028.734.841.2450.74342.1043.9040.046.0853754515031.438.846.6400.64746.1047.9044.050.0853755017035.042.951.8400.55150.0052.0048.054.0904006018038.646.957.2400.45654.9057.1052.060.01004257020042.252.063.8400.36260.8063.2058.066.01204508021558.864.471.6350.36866.6069.4064.072.01504759024065.671.779.8350.257573.5076.5070.079.01705009525573.480.288.6350.2Voltage regulator diodesBZV55 seriesTHERMAL CHARACTERISTICS Note1.Device mounted on a ceramic substrate of 10×10×0.6mm.SYMBOL PARAMETERCONDITIONSVALUE UNIT R th j-tp thermal resistance from junction to tie-point300K/W R th j-a thermal resistance from junction to ambient see Fig.2 and note 1380K/WGRAPHICAL DATAhandbook, full pagewidth10−1110102103104105MBG930102101103t p (ms)t pt p TTδ =0.020.01≤0.0010.750.500.330.200.100.05δ = 1R th j-a (K/W)Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.Voltage regulator diodes BZV55 seriesFig.3Maximum permissible non-repetitive peak reverse power dissipation versus duration.handbook, halfpageMBG8011031duration (ms)P ZSM (W)1010210−1101(1)(2)(1)T j =25°C (prior to surge).(2)T j =150°C (prior to surge).Fig.4Typical forward current as a function of forward voltage.handbook, halfpage0.61.03001000200MBG7810.8V F (V)I F (mA)T j =25°C.Fig.5Temperature coefficient as a function of working current; typical values.handbook, halfpage060−2−3−1MBG7832040I Z (mA)S Z (mV/K)4V33V93V63V02V42V73V3BZV55-B/C2V4to BZV55-B/C4V3.T j =25to 150°C.Fig.6Temperature coefficient as a function of working current; typical values.handbook, halfpage0201610−55MBG7824812I Z (mA)S Z (mV/K)4V71211109V18V27V56V86V25V65V1BZV55-B/C4V7to BZV55-B/C12.T j =25to 150°C.Voltage regulator diodesBZV55 seriesPACKAGE OUTLINEREFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IEC JEDECEIAJNote1. The marking band indicates the cathode.SOD80C100H0197-06-20Hermetically sealed glass surface mounted package; 2 connectorsSOD80CUNIT D mm 1.601.453.73.30.3H L DIMENSIONS (mm are the original dimensions)HDLL(1)1 2 mmscalekaVoltage regulator diodesBZV55 seriesDATA SHEET STATUS Notes1.Please consult the most recently issued data sheet before initiating or completing a design.2.The product status of the device(s) described in this data sheet may have changed since this data sheet waspublished. The latest information is available on the Internet at URL .DATA SHEET STATUS (1)PRODUCT STATUS (2)DEFINITIONSObjective dataDevelopmentThis data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice.Preliminary data QualificationThis data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.Product data ProductionThis data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.DEFINITIONSShort-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.Exposure to limiting values for extended periods may affect device reliability.Application information Applications that are described herein for any of these products are forillustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.DISCLAIMERSLife support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products canreasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.Right to make changes Philips Semiconductorsreserves the right to make changes,without notice,in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. PhilipsSemiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent, copyright, or mask work right to these products,and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.Voltage regulator diodes BZV55 seriesNOTESPhilips Semiconductors Product specification Voltage regulator diodes BZV55 seriesNOTES2002Feb2811Philips Semiconductors – a worldwide companyContact informationFor additional information please visit .Fax:+31402724825For sales offices addresses send e-mail to:sales.addresses@.© Koninklijke Philips Electronics N.V. 2002SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands613514/03/pp12 Date of release:2002Feb28Document order number: 939775009386。
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BZX55 – C0V8(3)
0.73 … 0.83< 8< 600– 0.25–––––BZX55 – C2V7
2.5 … 2.9< 85< 600– 0.08– 0.06< 10000< 501135BZX55 – C3V0
2.8 …
3.2< 85< 600– 0.08– 0.06< 4000< 401125BZX55 – C3V3
3.1 … 3.5< 85< 600– 0.08– 0.05< 2000< 401115BZX55 – C3V6
3.4 … 3.9< 85< 600– 0.08– 0.04< 2000< 401105BZX55 – C3V9
3.7 …
4.1< 85< 600– 0.07– 0.03< 2000< 40195BZX55 – C4V3
4.0 … 4.6< 75< 600– 0.04– 0.01< 1000< 20190BZX55 – C4V7
4.4 …
5.0< 60< 600– 0.03+0.01< 500< 10185BZX55 – C5V1
4.8 …
5.4< 35< 550– 0.02+0.05< 100< 2180BZX55 – C5V6
5.2 …
6.0< 25< 450– 0.01+0.06< 100< 2170BZX55 – C6V2
5.8 …
6.6< 10< 2000+0.07< 100< 2264BZX55 – C6V8
6.4 …
7.2< 8< 150+0.01+0.08< 100< 2358BZX55 – C7V5
7.0 … 7.9< 7< 50+0.01+0.09< 100< 2553BZX55 – C8V2
7.7 … 8.7< 7< 50+0.01+0.09< 100< 2647BZX55 – C9V1
8.5 … 9.6< 10< 50+0.02+0.10< 100< 2743BZX55 – C10
9.4 … 10.6< 15< 70+0.03+0.11< 100< 27.540BZX55 – C11
10.4 … 11.6< 20< 70+0.03+0.11< 100< 28.536BZX55 – C12
11.4 … 12.7< 20< 90+0.03+0.11< 100< 2932BZX55 – C13
12.4 … 14.1< 26< 110+0.03+0.11< 100< 21029BZX55 – C15
13.8 … 15.6< 30< 110+0.03+0.11< 100< 21127BZX55 – C16
15.3 … 17.1< 40< 170+0.03+0.11< 100< 21224BZX55 – C18
16.8 … 19.1< 50< 170+0.03+0.11< 100< 21421BZX55 – C20
18.8 … 21.2< 55< 220+0.03+0.11< 100< 21520BZX55 – C22
20.8 … 23.3< 55< 220+0.03+0.11< 100< 21718BZX55 – C24
22.8 … 25.6< 80< 220+0.04+0.12< 100< 21816BZX55 – C27
25.1 … 28.9< 80< 220+0.04+0.12< 100< 22014BZX55 – C30
28 … 32< 80< 220+0.04+0.12< 100< 22213BZX55 – C33
31 … 35< 80< 220+0.04+0.12< 100< 22412BZX55 – C36
34 … 38< 80< 220+0.04+0.12< 100< 22711BZX55 – C39
37 … 41(4)< 90(4)< 500(5)+0.04+0.12< 100< 52810BZX55 – C43
40 … 46(4)< 90(4)< 600(5)+0.04+0.12< 100< 5329.2BZX55 – C47
44 … 50(4)< 110(4)< 700(5)+0.04+0.12< 100< 5358.5BZX55 – C51
48 … 54(4)< 125(4)< 700(5)+0.04+0.12< 100< 10387.8BZX55-C56
52.0 … 60.0(4)< 135(4)< 1000(5)typ. +0.1(4)< 100< 10427.0BZX55-C62
58.0 … 66.0(4)< 150(4)< 1000(5)typ. +0.1(4)< 100< 1047 6.4BZX55-C68
64.0 … 72.0(4)< 200(4)< 1000(5)typ. +0.1(4)< 100< 1051 5.9BZX55-C7570.0 … 79.0(4)< 250(4)< 1000(5)typ. +0.1(4)
< 100< 1056 5.3BZX55-C0V8 THRU BZX55-C75
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Type
Zener Voltage range (1)at I Z = 5 mA V Z V at I Z = 5 mA f = 1 kHz r zj ΩDynamic resistance Temp. coefficient of Zener Voltage at I Z = 5 mA αV Z %/K at I Z = 1mA f = 1 kHz
r zj Ωmin max I R nA I R µA at V R V Admissible Zener current (2)I ZM mA Reverse leakage current at T amb =150°C at T amb =25°C NOTES:
(1) Tested with pulses t p = 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
(3) The BZX55–C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”.Connect the cathode lead to the negative pole
(4) at I Z = 2.5 mA
(5) at I Z = 0.5 mA。