IDT05S60C_rev2[1].1

30
6 Typ. reverse current vs. reverse voltage I R=f(V R) parameter: T j
102
1
0.1
25
0.5
101
20
0.2
100
175ºC
P F(AV) [W]
15
I R [µA]
150ºC
10-1 10 10-2 5
25ºC
100ºC
-55ºC
1) 2) 3)
J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 5 7.5 42 Unit A
6
12
5
10
E c [µC]
3
Q c [nC]
0 100 200 300 400 500 600
4
8
6
2
4
1
2
0
0 100 400 700 1000
V R [V]
di F/dt [A/µs]
Rev. 2.1
page 5
2008-06-06
IDT05S60C
PG-TO220-2-2: Outline
0 0 2 4 6 8 10 12
10-3 100
200
300
400
500
600
I F(AV) [A]
V R [V]

7 Transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
8 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 °C, f =1 MHz
4)
Only capacitive charge occuring, guaranteed by design. page 2 2008-06-06
Rev. 2.1
IDT05S60C
1 Power dissipation P tot=f(T C) parameter: RthJC(max)
60
2 Diode forward current I F=f(T C); T j≤175 °C parameter: R thJC(max); V F(max)
T sold
-
-
260
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.07 mA I F=5 A, T j=25 °C I F=5 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C 600 1.5 1.7 0.6 1.7 2.1 70 µA V
15
100 °C 150 °C 175 °C
4 Typ. forward characteristic in surge current mode I F=f(V F); t p=400 µs; parameter: Tj
60
50
10
40
-55 °C 175 °C
I F [A]
I F [A]
25 °C
V R=600 V, T j=150 °C
-
2.5
700
AC characteristics Total capacitive charge Switching time3) Total capacitance Qc tc C V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f =1 MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 12 240 30 30 <10 nC ns pF
21 180 9 600 A2s V V/ns W °C Ncm 2008-06-06
VR = 0…480V T C=25 °C
50 55 -55 ... 175
M3 and M3.5 screws page 1
60
IDT05S60C
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6mm ( 0.063in.) from case for 10s 2.7 62 K/W Values typ. max. Unit
15
50
12.5
40
10
P tot [W]
30
I F [A]
25 50 75 100 125 150 175 200
7.5
20
5
10
2.5
0
0 25 50 75 100 125 150 175 200
T C [°C]
T C [°C]
3 Typ. forward characteristic I F=f(V F); t p=400 µs parameter: T j
300
250
0.5
100
0.2
200
Z thJC [K/W]
0.1 0.05 0.02
C [pF]
10-4 10-3 10-2 10-1 100
150
10-1
0.01
100
single pulse
50
10-2 10-5
0 10-1 100 101 102 103
t p [s]
V R [V]
Rev. 2.1
30
25 °C
5
20
100 °C
10
150 °C
-55 °C
0 0 1 2 3 4
0 0 2 4 6 8
V F [V]
V F [V]
Rev. 2.1
page 3
2008-06-06
IDT05S60C
5 Typ. forward power dissipation vs. average forward current P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
page 4
2008-06-06
IDT05S60C
9 Typ. C stored energy E C=f(V R) 10 Typ. capacitance charge vs. current slope Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
7
14
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2)
Product Summary V DC Qc IF 600 12 5 V nC A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDT05S60C Package PG-TO220-2-2 Marking I F=5 A, T j=25 °C D05S60C Pin 1 C Pin 2 A