IRFBC20LPBF中文资料

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F20C20中文资料

MOSPEC F20C05 Thru F20C20 SwitchmodeDual Fast Recovery Power RectifiersDesigned for use in switching power supplies. inverters and as freewheeling diodes. These state-of-the-art devices have the followingfeatures:Glass Passivated chip junctionsLow Reverse Leakage CurrentFast Switching for High Efficiency150¢J Operating Junction TemperatureLow Stored Charge Majority Carrier ConductionLow Forward Voltage , High Current CapabilityPlastic Material used Carries Underwriters LaboratoryFlammability Classification 94V-OMAXIMUM RATINGSF20CCharacteristic Symbol05 10 15 20UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R50 100 150200 VRMS Reverse Voltage V R(RMS) 35 70 105 140 V Average Rectifier Forward CurrentPer Leg T C=125¢J Per Total Device I F(AV)1020APeak Repetitive Forward Current(Rate V R, Square Wave, 20kHz)I FM 20 ANon-Repetitive Peak Surge Current(Surge applied at rate load conditionshalfware, single phase, 60Hz)I FSM 175 AOperating and Storage JunctionTemperature RangeT J , T stg-65 to +150 JELECTRIAL CHARACTERISTICSF20CCharacteristic Symbol05 10 15 20UnitMaximum Instantaneous Forward Voltage( I F=10 Amp T C = 25¢J) V F 1.30 V Maximum Instantaneous Reverse Current( Rated DC Voltage, T C = 25¢J) ( Rated DC Voltage, T C = 125¢J) I R10200uAReverse Recovery Time( I F = 0.5 A, I R =1.0 , I rr =0.25 A )T rr 150 nsTypical Junction Capacitance(Reverse Voltage of 4 volts & f=1 MHz) C P 55 P FFAST RECOVERYRECTIFIERS20 AMPERES50-200 VOLTSTO-220ABMILLIMETERSDIMMIN MAXA 14.68 15.32B 9.78 10.42C 5.02 6.52D 13.06 14.62E 3.57 4.07F 2.42 2.66G 1.12 1.36H 0.72 0.96I 4.22 4.98J 1.14 1.38K 2.20 2.98L 0.33 0.55M 2.48 2.98O 3.70 3.90F20C05 Thru F20C20FIG-3 FORWARD CURRENT DERATING CURVEA V E R A G E F O R W A R D R E C T I F I E D C U R R E N T (A m p .)LEAD TEMPERATURE (¢J )FIG-4TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E (P F )REVERSE VOLTAGE (Volts.)FIG-5PEAK FORWARD SURGE CURRENTP E A K F O R W A R D S U R G E C U R R E N T (A m p .)NUMBER OF CYCLES AT 60 HzFIG-1 TYPICAL FORWARD CHARACTERISITICSA V E R A G EF O R WA R D R E C T I F I E D C U R R E N T (A m p .)FORWARD VOLTAGE (Volts)FIG-2 TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T (u A .)PERCENT OF PEAK REVERSE VOLTAGE (¢M )Set time base for 20/50 ns/cmFIG-6 Reverse Recovery Time Characteristic and Test Circuit Diagram。

IRFR220NTRPBF中文资料

Units
mJ A mJ
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
10
3.0 2.5
TJ = 175 ° C
2.0 1.5
1
1.0
0.5 0.0 -60 -40 -20
0.1 4.0
Notes through are on page 10

1
11/29/00
元器件交易网
IRFR/U220N
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 200 ––– ––– V VGS = 0V, I D = 250µA ––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 600 mΩ VGS = 10V, I D = 2.9A 2.0 ––– 4.0 V VDS = VGS , ID = 250µA ––– ––– 25 VDS = 200V, VGS = 0V µA ––– ––– 250 VDS = 160V, VGS = 0V, T J = 150°C ––– ––– 100 VGS = 20V nA ––– ––– -100 VGS = -20V

彩显常用大功率三极管、场效应管参数表

彩显常用大功率三极管、场效应管参数表型号功率(W)反压(V)电流(A)功能BU208A 50 1500 5 电源开关管BU508A 75 1500 8 电源开关管BU2508AF 45 1500 8 行管*BU2508DF 125 1500 8 行管*BU2508D 125 1500 8 行管BU2520AF 45 1500 10 行管BU2520AX 45 1500 10 行管*BU2520DF 125 1500 10 行管BU2522AF 45 1500 10 行管*BU2522DF 80 1500 10 行管*BU2525DF 45 800 12 行管BUH515 60 1500 8 行管BUH515D 60 1500 8 行管C1520 10 250 0.2 视放C1566 1.2 250 0.1 视放C1573 0.6 250 0.07 视放C1875 50 1500 3.5 电源开关管C3153 100 900 6 电源开关管C3026 50 1700 5 行管C3457 50 1100 3 电源开关管C3459 90 1100 4.5 电源开关管C3460 100 1100 6 电源开关管C3461 140 1100 8 行管*C3683 50 1500 5 行管C3686 50 1400 8 行管C3687 150 1500 8 行管C3481 120 1500 5 电源开关管*C3842 120 1500 6 行管*C3883 50 1500 5 行管C3885 50 1400 7 行管C3886 50 1400 8 行管C3887 80 1400 7 行管C3888 80 1400 80 行管C3889 80 1400 80 行管*C3891 50 1400 6 行管*C3892 50 1400 7 行管*C3893 50 1400 8 行管C3895 60W 1400V 7A 行管C3896 70 1400 8 行管*C3897 180 1500 12 行管C3897 250 1500 25 行管C3998 250 1500 25 行管*C4122 60 1500 6 行管*C4123 60 1500 7 行管*C4124 70 1500 8 行管*C4125 70 1500 10 行管C4237 150 800 10 行管*C4269 60 1500 7 行管*C4293 50 1500 5 行管*C4294 50 1500 6 行管*C4589 50 1500 10 行管*C4742 50 1500 6 行管*C4744 50 1500 6 行管C4747 50 1500 10 行管*C4769 60 1500 7 行管C4770 60 1500 7 行管C5088 45 1500 8 行管C5129 50 1500 6 行管C5144 200 1700 20 行管C5148 50 1500 8 行管C5250 50 1500 8 行管C5297 60 1500 8 行管C5299 60 1400 8 行管C5339 50 1500 7 行管C5418 120 1500 6 行管*D1396 50 1500 2 行管*D1398 50 1500 5 行管D1402 120 1500 5 电源开关管D1403 120 1500 6 电源开关管*D1426 80 1500 3.5 行管*D1427 80 1500 5 行管*D1428 80 1500 6 行管D1433 80 1500 7 行管D1434 80 1500 5 行管*D1455 50 1500 5 行管*D1554 40 1500 3.5 行管D1555 50 1500 5 电源开关管*D1878 60 1500 6 行管*D1879 60W 1500V 5A 行管*D1880 70 1500 8 行管*D1881 70 1500 10 行管D1886 70 1500 8 行管D1887 70 1500 10 行管*D2125 50 1500 5 行管*D870 50 1500 5 行管功率Pcm/W 反压BVCBO 电流ICM/A（*带阻尼）进口与国产显示器常用三极管代换表型号可代用型号用途价格2SA562 CG673B、2SB689 预视放2SA670 2SA1069、2SB513 电源调整管2SA673 2SA719、2SA697 帧激励2SA715 3CF3A、2SB529 场输出管2SA778A 3CG21C、CG75-1AB 开关电源误差放大2SA778AK C3CG21G、CG75-1A 开关电源误差放大2SA844D 3CG21C、CG75-1AB 视放2SA844E 3CG21G 视放2SA940 CD568B 场输出管2SA6395 2SA778、2SA858 行激励管2SB337 B337 电源调整管2SB407 3L780 电源调整管2SB548 3CF3B、2SA794 场输出管2SB566AK CD77-1A、3CF5A 电源调整管2SB556K CD77-1A、3CF5B 电源调整2SB621 3CG23B、2SB1035 电源推动管2SC458 3DG4A、2SC664 行振荡2SC536 3DG4A、2SC2320 电源推动管2SC562 G6738、B689 预视放2SC633 3DG6B、2SC1684 行振荡管2SC634 3DG12B 行振荡管2SC643A D2027、2SD818 行输出管2SC680A 3DD205B、2SC1025 场输出2SC681 3DD102B、2SC901 行输出2SC734 3DX200B、2SC2274 行振荡管2SC828 3DG56B、2SC3330 电源误差放大管2SC935 3DD102D、2SD320 电源调整管2SC8937 D2027、2SD818 行输出管2SC1034 2SD818、2SD299 行输出管2SC1162 FA433A、2SC2068 场输出枕形校正2SC1172 D2027、2SD820 行输出管2SC1209 3DG12A、2SD734 电源误差放大管2SC1213 3DG130A、2SC2120 电源误差放大管2SC1213A 3DG12B、2SC1247A 电源误差放大2SC1214 3DA151A、2SC2002 枕形校正2SC1308 D209、2SD820 行输出管2SC1318 3DG12A、2SC2274 行激励管2SC1364 3DX2038、2SC2320 行激励管2SC1505 DA1722B、2SC1757 行视放2SC1507 DA1722B、2SC1756、2SC1757 行激励管2SC1364 3DX2038、C23020 行激励管2SC1520 DA1722B、2SC2068 预视放2SC1566 3DA151D、2SC1514 视放2SC1573 3DA87C、2SC1762 视放2SC1672 3DD102B、2SC2433 电源调整管2SC1685 3DD180、2SC1570 脉冲开关2SC1819 3DA151D、2SC2425 视放2SC1890A 3DA878、2SC2363 视放2SC1905 3DA151D、2SD1163 视放2SC1942 D209、2SD1401 行输出管2SC2233 3DD12B、2SC2373 行输出2SD201 3DD102A、2SD125A 电源调整管2SD226 3DD207、2SD315 电源调整管2SD299 D2027、2SC1308 行输出管2SD350 D2027、2SD348 行输出管2SD380 D209、2SD348 行输出管2SD869 2SD993、2SD898B 行输出管C3150 C3151、C3152 开关管BU508A BU508D、C3893、C3895、C3897 开关管彩显中易损场效应管主要参数表型号功率Pcm/W 最大电流IDM/A D-S极间耐压价格2SK534 100W 5A 800V2SK538 100 3 9002SK557 100 12 5002SK560 100 15 5002SK566 78 3 8002SK644 125 10 5002SK719 120 5 9002SK725 125 15 5002SK727 125 5 9002SK774 120 18 5002SK785 150 20 5002SK787 150 8 9002SK788 150 13 5002SK790 150 15 5002SK872 150 6 9002SK955 150 9 8002SK956 150 9 8002SK962 150 8 9002SK1019 300 30 5002SK1020 300 30 5002SK1045 150 5 9002SK1081 125 7 8002SK1082 125 6 8002SK1117 100 6 6002SK1118 45 6 6002SK1119 100 4 10002SK1120 150 8 10002SK1171 240 5 14002SK1198 75 3 8002SK1249 130 15 5002SK1250 150 20 5002SK1271 240 15 1400 2SK1280 150 18 5002SK1281 120 4 7002SK1341 100 5 9002SK1342 100 8 9002SK1356 40 3 9002SK1357 125 5 9002SK1358 150 9 9002SK1451 120 5 9002SK1498 120 20 5002SK1500 160 25 5002SK1502 120 7 9002SK1507 50 6 6002SK1512 150 10 8502SK1531 150 15 5002SK1537 100 5 9002SK1539 150 10 9002SK1563 150 12 5002SK1649 100 6 9002SK1794 150 6 9002SK2038 125 6 9002N7000 0.4 0.2 60 BUZ385 125 6 500GH30N60 180 30 600 GH30N100 250 30 1000GH40N60 200 40 600 H1245 120 12 450H13N50 150 13 500 IBF834 100 3 500 IPF440 125 8 500 IRT450 150 13 500 IRF350 150 13 500 IRF360 300 25 400 IRF440 125 8 500 IRF451 150 13 450 IRF460 300 21 500 IRF620 40 5 200IRF630 75 9 200IRF634 75 8.1 250 IRF640 125 18 200 IRF730 75 5.5 400 IRF740 125 10 400 IRF820 50 2.5 500 IRF830 75 4.5 500 IRF834 100 5 500 IRF840 125 8 500 IRF841 125 8 450 IRF842 125 7 500 IRF9610 20 1 200 IRF9630 75 6.5 200 IRF9640 125 11 200 IRF450 150 13 500 IRFD113 1 0.8 80 IRFD123 1 1.1 80 FIRP150 180 41 100IRFP151 180 19 60IRFP240 150 31 200IRFP250 180 31 200IRFP251 180 33 150IRFP254 180 23 250IRFP350 180 16 400IRFP351 180 16 350IRFP360 250 23 400IRFP450 180 14 500IRFP452 180 12 500IRFP460 250 20 500 IRFBC40 125 6.2 600IRF4P51 180 14 450 IXGH10N100 100 10 1000 IXGH15N100 150 150 1000 IXGH20N60 150 20 600 IXTH50N30 150 50 300 IXTH50X20 250 50 200 IXTH67N10 200 67 100 LXTH24N50 250 24 500 LXTH30N20 180 30 200 LXTH30N30 180 30 300 LXTH30N50 300 30 500 LXTH40N30 250 40 300 LXTH50N10 150 50 100 LXTH50N20 150 50 200 LXTH67N70 200 67 100 LXTH75N10 200 75 100 MTH8N50 120 8 500 MTM6N80 120 6 800METH10N50 120 10 500MTH12N50 120 12 500MTH14N50 150 14 500MTH20N20 120 20 200MTH25N10 150 25 200MTH30N10 120 30 100MTH35N15 150 35 150MTH40N10 150 40 100MTH8N60 120 8 600MTM10N20 75 10 200MTM20N20 125 20 200MTM25N10 100 25 100MTM30N10 120 30 100MTM40N10 150 40 100MTM6N90 150 6 900MTM8N50 100 8 500MTM8N90 150 8 900MTP3N60 75 3 600MTP3N100 75 3 1000MTP4N60 50 4 600MTP4N80 50 4 800MTP5P25 75 5 250MTP5N45 75 5 450MTP5N50 75 5 500MTP6N60 125 6 600MTP6N60E 125 6 600RFP50N05 132 50 50RFP50N05L 110 50 50型号反压 (V) 电流 (A) 功率(W) β值阻尼D1175 1500 5 100 15 有D1391 1500 5 80 12 有D1398 1500 5 50 12 有D1403 1500 6 120 20 无D1426 1500 3.5 80 有D1427 1500 5 80 有D1428 1500 6 80 12 有D1429 1500 2.5 80 20 有D1431 1500 5 80 无D1432 1500 6 80 20 有D1433 1500 7 80 20 有D1439 1500 3 50 有D1453 1500 3 50 无D1497 1500 6 50 15 有D1545 1500 5 50 20 无D1547 1500 7 50 20 无D1554 1500 3.5 40 有D1555 1500 5 50 有D1556 1500 6 50 12 有D1651 1500 5 60 有D1652 1500 6 60 15 有D1710 1500 6 100 20 无D1878 1500 6 50 15 有D1879 1500 6 60 15 有D1880 1500 8 70 有D1881 1500 10 70 有D1884 1500 5 60 无D1885 1500 6 60 无D1887 1500 10 70 12 无D1910 1500 3 40 20 有D2125 1500 5 50 12 有D2251 1500 7 60 有D2252 1500 7 60 无D2253 1700 6 50 有D2334 1500 5 80 15 无D2335 1500 7 100 15 无型号 P/N 参数备注及用途型号 P/N 参数A940 P 150V1.5A25W 4MHz TO-220 D1271 N 150V7A40W C2073 N 150V1.5A25W 4MHz TO-220 D1273A N 100V3A40WA1304C3296 150V1.5A20W 4MHz D1275A N 80V2A35WB647D667 120V1A0.9W 140MHz D1266 N 80V3A35WB649D669 180V1.5A 140MHz D1264A N 200V2A30WB834D880 60V3A30W TO-220 D1309 N 150V8A40WB546D401 200V2A20W 5MHz D1365 N 800V3A40WB772D882 40V3A10W 80MHz D1415 N 100V7A40W56105609 50V0.8A0.625W 100MHz D1499 N 100V5A40WB1185D1762 60V3A25W 70MHz D2025 N 100V8A30WB1186D1763 120V1.5A20W 50MHz TIP102 N 100V8A80WTIP42CTIP41C 100V5A65W >3MHz TOP202 TOP222TIP127TIP122 100V5A65W >1000 TOP223 TOP224封装 MJE13003 N 400V1.5A40WC2335 N 400V7A40W MJE13005 N 400V4A75WC3148 N 800V3A40W MJE13007 N 400V8A80WC3309 N 400V2A20W MJE13009 N 400V12A100WC3310 N 400V5A30WC4004 N 800V1A30W C388A N 25V0.02AC3039 N 400V7A50W C458 N 30V0.1A0.2WC2233 N 200V4A40W C536 N 40V0.1A0.2WC2373 N 200V7.5A40W C945 N 60V0.1A0.25WC3852A N 100V3A25W 15MHz >500 C752 N 30V0.1A0.1W C4834 N 400V8A45W <300/140nS C1047 N 30V0.02A65MHz C5027 N C1162 N 35V2.5A10WC5249 N C1213 N 50V0.5A0.4WD313 N 60V3A30W 8MHz C1360 N 50V0.05A1WD1138 N C1383 N 30V1A1WD1071 N 450V6A40W >500 C1473 N 300V0.07A0.75W参数备注及用途型号参数备注及用途BUW11A N 1000/450V5A100W 电源 AF=50W PHIBUW12A N 1000/450V10A125W 电源 AF=50W PHIBUW13A N 1000/450V15A175W 电源 AF=50W PHIBU2508AF N 1500/700V8A50W 电源 PHIBU2508DF N 1500/700V8A50W 行 PHIBU2508AX N 1500/700V8A50W 电源 PHIBU2508DX N 1500/700V8A50W 行 PHIBU2520AF N 1500/800V10A50W 电源 PHIBU2520DF N 1500/800V10A50W 行 PHIBU2520AX N 1500/800V10A50W 电源/行 PHIBU2520DX N 1500/800V10A60W 行 PHIBU2522AX N 1500/800V10A60W 电源/行 PHIBU2523AX N 1500/800V10A60W 电源/行 PHIBU2527AX N 1500/800V12A60W 电源/行 PHIBU2527DX N 1500/800V12A60W 行 PHIC4236 N 1200/800V6A100W 电源 SHIC4237 N 1200/800V10A50W 电源 SHID1541 N 1500V3A50W 行 MATC4111 N 1500/700V10A150W 电源 MATMN650 N 1500/600V5A80W 电源 SAKC4058 N 600/450V10A100W 电源 SHID2333 N 1500/600V5A80W 行 MATD2334 N 1500/600V5A80W 电源 MATD2335 N 1500/600V7A100W 行 MATC4706 N 900/600V14A130W 电源 SAKBUH715N N 1500/700V10A60W 电源 STC3927 N 900/600V10A120W 电源 SAKC3679 N 900/800V5A100W 电源 SAKC5287 N 900/550V5A80W 电源 SAK型号 P/N 参数备注及用途型号 P/N 参数D2445 N 1500/800V6A50W K30A 50VIdss>0.3up<5VC4745 N 1500/800V6A50W 电源HIT K117 50VIdss>0.6up<10VC4746 N 1500/800V8A50W 电源HIT K118 50VIdss>0.3up<1.5VC5250 N 1500V8A50W 行 HIT K304 30VIdss>0.6up<4VC5207A N 1500/800V10A50W 电源 HIT K1117 600V6A100W D2300 N 1500V5A50W 行 HIT K1118 600V6A45WC4297 N 500/400V12A75W 电源 SAK K1119 1000V4A100W C4927 N 1500V8A50W 行 HIT K2141 600V+/-6A35WD1959 N 1400/650V10A50W 电源 HIT K1507 600V9A50WC4589 N 1500/800V10A50W 电源 HIT K1995 900V+/-3A35W C4877 N 1500V8A50W 行 HIT K1445 450V5A30WKSD5072 N 1500/800V5A60W 行 SAM K2056 800V4A40W KSD5076 N 1500/800V5A60W 行SAM IRFBC30 600V3.6A74WKSC5802 IRFBC40R 600V6.2A125WKSC5803 N 1500/800V7A50W 行 SAM IRFBC60KSC5386 N 1500/800V7A50W 行SAM IRF530N 100V15A80WKSC5088 N 1500/800V8A50W 电源SAM IRF9530N 100V13A75WKSD5702 N 1500V6A70W 行 SAM IRF540N 100V27A94WKSD5703 IRF9540N 100V19A94WBUS13A N 1000/450V15A175W 电源VAL TO-3 IRF610 200V3.3A43WBUS14A N 1000/450V30A250W 电源VAL TO-3 IRF9610 200V1.8A20WBUV48A N 1000/450V15A150W 电源 ST IRF620 200V5A40W C3552 N 1100/800V12A150W 电源 SAK IRF9620 200V5A40W C5386 N 1500/600V8A50W 电源 TOS IRF630 200V9A75WC4119 N 1500/800V15A250W 达林顿+阻尼IRF9630 200V6.5A75W系列晶振 455KHz-503KHz IRF640 200V18A125W3.57MHz-30MHz IRF9640 200V11A125W二极管开关管快恢复整流管 IRF730 400V5.5A75W稳压管阻尼管 IRF740 400V10A125W型号参数特性型号参数BC327 P 50V0.8A0.625W 100MHz BTA08 8A双向BC337 N 50V0.8A0.625W 100MHz BTA12 12A双向BC328 P 30V0.8A0.625W 100MHz BTA20 20A双向BC338 N 30V0.8A0.625W 100MHz BTA26 26A双向BC369 P 25V1A.8W 65MHz BTA41 41A双向BC546 N 80V0.1A0.5W 300MHz BTA16 16A双向BC547 N 50V0.1A0.5W 300MHz 2P4M 3A单向BC558 N 30V0.1A0.5W 150MHz CR3AM 3A单向BC556 P 80V01A0.5W 150MHz TLC336 3A双向BC557 P 50V0.1A0.5W 150MHz BCR3AM 3A双向9011 N 50V0.03A0.4W 150MHz FD312 彩电用9012 P 40V0.5A0.625W FD315 彩电用9013 N 40V0.5A0.625W PH2369 彩电用9014 N 50V0.1A0.45W 150MHz 1W稳压管9015 P 50V0.1A0.45W 100MHz 1N4728A 3.3V9016 N 30V0.025A0.4W 620MHz 1N4730A3.9V9018 N 30V0.05A0.4W 700MHz 1N4732A 4.7V8050 N 40V1.5A1W 100MHz 1N4734A5.6V8550 P 40V1.5A1W 100MHz 1N4736A 6.8V2N5551 N 180V0.6A0.625W 100MHz 1N4738A 8.2V2N5401 P 180V0.6A0.625W 100MHz 1N4740A 10V可控硅 1N4742A 12V1A单向 BT169 100-6 100-8 FOR1B FOR3G 1N4744A 15V 1A双向 97A6 94A4 97A4 1N4746A 18VBT136 6A双向中间引线通散热片1N4748A 22VBT137 8A双向中间引线通散热片1N4750A 27VBT138 10A 双向中间引线通散热片1N4752A 33VBT139 12A双向中间引线通散热片1N4756A 47VBTA06 6A双向中间线不通散热片1N4764A 100V型号参数特性型号参数D820 N 1500/600V5A80W 电源 D1047 N 160V12A100WD869 N 1500/600V3.5A50W 行 B817 P 160V12A100WD850 N 1500/700V3A65W 电源 D1559 N 100V20A100WD870 N 1500/600V5A50W 行 B1079 P 100V20A100WD905 N 1400/650W8A50W 电源 D2256 N 120V25A120WD871 N 1500/600V6A50W 行 B1494 P 120V25A120WD1204 N 500/400V15A100W 电源 D718 N 120V8A80WD898 N 1500V3.5A50W 行 B688 P 120V8A80WD1279 N 1400/700V10A50W 电源 D1435 N 100V15A100W D951 N 1500V3A65W 行 B1031 P 100V15A100WC1942 N 1500/800V3A50W 电源带阻三极管D1173 N 1500V5A70W 行 RN1201 RN1202C2027 N 1500/800V5A50W 电源 RN1206 RN2201D1175 N 1500V5A100W 行 RN1001 RN1001大功率功放管 DTA114 DTA144C3280 N 160V12A120W HiFi TOS DTC144A1301 P 160V12A120W HiFi TOD 光耦及三端C3281 N 200V15A150W HiFi TOS 521-1 621-1A1302 P 200V15A150W HiFi TOS 631 632C5200 N 230V15A150W HiFi TOS 4N35 CNX62AA1943 P 230V15A150W HiFi TOS PC113 PC117D2155 N 180V15A150W HiFi TOS SE090 SE110B1429 P 180V15A150W HiFi TOS SE120 SE125C5198 N 140V10A100W HiFi TOS SE135 SE140A1941 P 140V10A100W HiFi TOS 78(L)06 78(L)08C5196 N 120V6A60W HiFi TOS 78(L)12 78(L)15A1939 P 120V6A60W HiFi TOS 78(L)24 79(L)05C3182 N 140V10A100W HiFi TOS 79(L)08 79(L)09A1265 P 140V10A100W HiFi TOS 79(L)15 79(L)18型号 P/N 参数备注及用途型号 P/N 参数C1514 N 300V0.1A1.25W 80MHz Vid-L HIT C2481 N 150V1.5A20WC1507 N 300V0.2A15W 80MHz Vid-L NIP C2611 N 300V0.1A0.8WC1569 N 300V0.15A12.5W 100MHz Vid TOS C2330 N 300V0.1A1WC1573 N 300V0.07A1W 80MHz NF Vid MAT C2331 N 80V0.7A1WC1627 N 80V0.4A0.8W Uni TOS C2655 N 60V2A0.9WC1687 N 40V0.03A0.4W NF/ZF MAT C2688 N 300V0.2A10W C1756 N 300V0.2A15W >50MHz SAY C2653 N 350V0.2A15W C1740 N 50V0.1A0.3W 180MHz Uni TOS C2785 N 60V0.1A0.25WC1815 N 60V0.15A0.4W >80MHz Uni TOS C2878 N 50V0.3A0.4WC1846 N 45V1A5W 200MHzNF/S-LMAT C3355 N 20V0.1A0.6WC1906 N 30V0.05A1GHz UHF HIT C3417 N 300V0.1A5WC1959 N 35V0.5A0.5W 300MHz Uni TOS C3419 N 40V0.8A5WC2001 N 30V0.7A0.6W 70MHz Uni NIP C3420 N 50V5A10W C2068 N 300V0.05A1.5W 95MHz Vid TOS C3807 N 30V2A15WC2120 N 30V0.8A0.6W 120MHz Uni TOS C3789 N 300V0.1A7WC2026 N 30V0.05A0.25W 2GHz UHF NIP C3198 N 60V0.15A0.4WC2060 N 40V1A0.75W 150MHz Uni TOY C4075 N 300V0.2A10WC2229 N 200V0.05A0.8W 120MHz Vid TOS C4544 N 300V0.1A8WC2230 N 200V0.1A0.8W >50MHz Vid TOS D400 N 25V1A1WC2271 N 300V0.1A0.9W Vid TOS D471 N 30V1A1WC2258 N 300V0.1A4W Vid MAT D965 N 40V5A0.75WC2240 N 120V0.1A0.3W 100MHz NF.rd TOS D966 N 40V5A1WC2482 N 300V0.1A0.9W Vid TOS D612 N 35V2A10WC2236 N 30V1.5A0.9W Uni TOS D789 N 100V1A0.9WC2371 N 300V0.1A10W Vid NIP D1640 N 120V2A1.2WC2383 N 160V1A0.9W NF/VA TOS D415 N 120V0.8A10WC2482 N 300V0.1A0.9W Vid TOS C3946 N 350V0.2A15WC2594 N 40V5A10W 150MHz D1406 N 60V3A30WC2500 N 30V2A0.9W 150MHz Uni TOS型号 P/N 参数备注及用途型号 P/N 参数A42 N 300V0.5A0.625W MPSA>50MHz A1266 P 50V0.15A0.4WA92 P 300V.05A.0625W MPSA>50MHz A1300 P 20V2A0.75W A44 N 500V0.3A0.625W MPSA>20MHz A1309 P 60V0.1A0.3WA94 P 400V0.3A0.625W MPSA A1320 P 250V0.05A0.6WA562 P 30V0.4A0.3W 70MHz A539 P 60V0.2A0.25WA564 P 25V0.1A0.4W 200MHz A642 P 30V0.2A0.25WA608 P 40V0.1A0.25W 180MHz A984 P 60V0.5A0.5WA673 P 50V0.5A0.4W 50MHz A1150 P 35V0.8A0.5WA683 P 30V1A1W 200MHz A1011 P 180V1.5A25WA684 P 60V1A1W 200MHz A1598 P 60V7A25WA733 P 60V0.1A0.25W 180MHz A1698 P 300V0.07A1.2WA788 P 150V0.05A0.2W 60MHz A1668 P 200V2A25WA817 P 80V0.4A0.8W Uni A1859A P 180V2A20WA844 P 55V0.1A0.3W 200MHz B562 P 25V1A0.5WA934 P 40V1A0.75W 150MHz B564 P 30V1A1WA933 P 50V0.1A0.3W 140MHz B764 P 60V1A0.9WA937 P 50V0.1A0.3W 140MHz B774 P 30V0.1A0.4WA950 P 30V0.8A0.6W 120MHz B892 P 60V2A1WA952 P 30V0.7A0.6W 160MHz B940 P 200V2A30WA966 P 30V1.5A0.9W 120MHz B946 P 130V7A40WA1013 P 160V1A0.9W >15MHz B1015 P 60V3A25WA1015 P 50V0.15A0.4W >80MHz B1274 P 60V3A20WA1018 P 200V0.07A0.75W >50MHz BUT11A N 1000V5A100WA1020 P 50V2A0.9W 100MHz BUT11AF N 1000V8A50WA1048 P 50V0.15A0.2W 80MHz BUT12AF N 1000V8A50WA1175 P 60V0.1A0.25W 180MHz BU406 N 400V7A60WA1160 P 20V2A0.9W 150MHz BUX87P N 450V0.5A20WA1162 P 50V0.15A >80MHz BU806 N 200V8A60WA1246 P 60V0.15A0.4W 100MHZ BU807 N 150V8A60W型号 N/P 参数备注及用途型号 N/P 参数D998 N 120V10A80W HiFi KIA D1710 N 1500/800V5A100W B778 P 120V10A80W HiFi KIA D1651 N 1500/800V5A60WC4278 N 150V10A100W 30MHz TOY BU508A N 1500/700V6A125WA1633 P 150V10A100W 30MHz TOY D1403 N 1500/800V120WHSE830 C3895 N 1500/800V7A60WHSE838 C3897 N 1500/800V10A70WHSE839 C5302 N 1500/800V15A75WHSE831 D1885 N 1500/800V6A60WC4468 N 200V10A80W 20MHz D1886 N 1500/800V8A70W A1695 P 200V10A80W 20MHz D1887 N 1500/800V10A70W TIP142 N 100V10A80W >500TIX D1877 N 1500/800V4A50W TIP147 P 100V10A80W >500TIX D1878 N 1500/800V5A60W C3907 N 180V12A130W 30MHz TOS D1879 N1500/800V6A60WA1516 P 180V12A130W 30MHz TOS D1880 N 1500/800V8A70WC2837 N 150V10A100W HiFi SAK D1881 N 1500/800V10A70WA1186 P 150V10A100W HiFi SAK C4429 N 1100/800V8A60W C3858 N 200V17A200W HiFi SAK C4769 N 1500/800V7A60W A1494 P 200V17A200W HiFi SAK C5296 N 1500/800V8A60W C2922 N 180V17A200W HiFi SAK C5297 N 1500/800V8A60W A1216 P 180V17A200W HiFi SAK C5298 N 1500/800V10A70WC2921 N 160V15A150W HiFi SAK C5299 N 1500/800V10A70WA1215 P 160V15A150W HiFi SAK D1397 N 1500/800V3.5A80WMJ15003 N 140V20A250W TO-3 MOT D1398 N 1500/800V5A80WMJ15004 P 140V20A250W TO-3 MOT D1453 N 1500/800V3A50WMJ15024 N 250V16A250W TO-3 MOT D1439 N 1500/800V3A50WMJ15025 P 250V16A250W TO-3 MOT C4424 N 1500/400V3A50WMJ11032 N 120V50A300W >1000MOT C3997 N 1500/800V20A250WMJ11033 P 120V50A300W >1000 MOT C3998 N 1500/800V25A250W120V30A200W TO-3 MOT HPA100 N 1500/800V10A150W 型号 P/N 参数备注及用途型号 P/N 参数IRF830 500V4.5A75W N-E K1180 500V+/-10A85WIRF840 500V8A125W N-E K1181 500V+/-13A85W BUZ90 600V4A75W N-E K1938 500V18A100W BUZ91 600V8A150W N-E K1916 450V18A80W6N60 600V6A125W N-E K2611 900V9A150W60N60 600V60A150W N-E K385 400V10A120WK725 500V15A125W N-E K386 450V10A120WK727 900V5A125W N-E IRFP150 100V40A180WK785 500V20A150W N-E IRFP250 200V30A190WK787 900V8A150W N-E IRFP350 400V16A180WK790 500V15A150W N-E IRFP450 500V14A180WK794 900V5A150W N-E IRFP460 500V20A280WK798 100V40A150W N-E 8NA80 800V8A150WK1794 900V+/-6A100W N-FET 5N90 900V5A150W K1796 900V+/-10A150W N-FET 7N90 900V7A150W K1081 800V7A125W N-E 10NA60 1000V10A150W K1082 900V6A125W N-E 8NA100 1000V8A150WK2485 900V+/-6A100W N-FET 9N80 800V9A150W K1120 1000V8A150W N-E 23N60 600V23A180WK1198 700V+/-2A35W N-FET 40N20 200V40A180W K1460 900V3.5A40W N-E IRFP254 250V23A190W K1017 450V20A150W N-E K428 60V10A50WK1018 500V18A125W N-E J122 60V10A50WK1358 900V9A150W N-E K413 140V8A100WK1217 900V8A100W N-E J118 140V8A100WK1248 500V10A100W N-E K399 100V10A100WK2039 900V5A100W N-E J113 100V10A100WK599 450V15A100W N-E K1058 160V7A100WK560 500V15A100W N-E J162 160V7A100W。

IRG4BC20KD中文资料

ParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 16I C @ T C = 100°C Continuous Collector Current 9.0I CM Pulsed Collector Current Q32AILMClamped Inductive Load Current R 32I F @ T C = 100°C Diode Continuous Forward Current 7.0I FM Diode Maximum Forward Current 32t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 60P D @ T C = 100°C Maximum Power Dissipation 24T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)IRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 600VV CE(on) typ. = 2.27V@V GE = 15V, I C = 9.0AShort Circuit RatedUltraFast IGBT4/24/2000• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V GE = 15V • Generation 4 IGBT design provides tighterparameter distribution and higher efficiency than previous generation• IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations• Industry standard TO-220AB packageBenefitsPD -91599AParameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT –––––– 2.1R θJC Junction-to-Case - Diode–––––– 3.5°C/WR θCS Case-to-Sink, flat, greased surface–––0.50–––R θJA Junction-to-Ambient, typical socket mount ––––––80WtWeight–––2 (0.07)–––g (oz)Thermal ResistanceAbsolute Maximum RatingsW• Latest generation 4 IGBTs offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses• This part replaces the IRGBC20KD2 and IRGBC20MD2 products• For hints see design tip 97003 1IRG4BC20KDParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—3451I C = 9.0A Q ge Gate - Emitter Charge (turn-on)— 4.97.4nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—1421V GE = 15V t d(on)Turn-On Delay Time —54—t r Rise Time —34—T J = 25°Ct d(off)Turn-Off Delay Time —180270I C = 9.0A, V CC = 480V t f Fall Time —72110V GE = 15V, R G = 50ΩE on Turn-On Switching Loss —0.34—Energy losses include "tail"E off Turn-Off Switching Loss —0.30—mJ and diode reverse recovery E ts Total Switching Loss —0.640.96See Fig. 9,10,14t sc Short Circuit Withstand Time 10——µs V CC = 360V, T J = 125°CV GE = 15V, R G = 50Ω , V CPK < 500Vt d(on)Turn-On Delay Time —51—T J = 150°C,See Fig. 11,14t rRise Time—37—I C = 9.0A, V CC = 480Vt d(off)Turn-Off Delay Time —220—V GE = 15V, R G = 50Ωt f Fall Time—160—Energy losses include "tail"E ts Total Switching Loss—0.85—mJ and diode reverse recovery L E Internal Emitter Inductance —7.5—nH Measured 5mm from package C ies Input Capacitance —450—V GE = 0V C oes Output Capacitance—61—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —14—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —3755ns T J = 25°C See Fig.—5590T J = 125°C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current — 3.5 5.0A T J = 25°C See Fig.— 4.58.0T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —65138nC T J = 25°C See Fig.—124360T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery —240—A/µs T J = 25°C See Fig.During t b—210—T J = 125°C 17Parameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 600——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.49—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.27 2.8I C = 9.0A V GE = 15V— 3.01—V I C = 16ASee Fig. 2, 5— 2.43—I C = 9.0A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage —-10—mV/°CV CE = V GE , I C = 250µA g feForward Transconductance T 2.9 4.3—S V CE = 100V, I C = 9.0A I CES Zero Gate Voltage Collector Current ——250µAV GE = 0V, V CE = 600V——1000V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop — 1.4 1.7VI C = 8.0A See Fig. 13— 1.3 1.6I C = 8.0A, T J = 150°C I GES Gate-to-Emitter Leakage Current ——±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsIRG4BC20KD 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC20KDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC20KD 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter VoltageFig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 9 - Typical Switching Losses vs. GateResistance Fig. 10 - Typical Switching Losses vs.Junction TemperatureCollector-to-Emitter CurrentFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current0.11101000.40.81.21.62.02.42.83.2FM F I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Forward Voltage Drop - V (V)IRG4BC20KD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt1002003004005001001000fdi /dt - (A/µs)R R Q - (n C )1001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )204060801001001000fdi /dt - (A/µs)t - (n s)r r 1101001001000fdi /dt - (A/µs)I - (A )I RR MIRG4BC20KDFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft1t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4BC20KD 9V g G A T E S IG NA LDE V ICE U NDE R T E S TCUR RE N T D.U.T.V O LT A G E IN D.U.T.CUR RE N T IN D1t0t1t2Figure 19. Clamped Inductive Load TestCircuit Figure20. Pulsed Collector CurrentTest Circuit=480V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4BC20KDNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 50Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.Case Outline TO-220AB0.55 (.022)0.46 (.018)3 X2.92 (.115)2.64 (.104)1.32 (.052)1.22 (.048)- B -4.69 (.185)4.20 (.165)3.78 (.149)3.54 (.139)- A -6.47 (.255)6.10 (.240)1.15 (.045) M IN4.06 (.160)3.55 (.140)3 X3.96 (.160)3.55 (.140)3 X 0.93 (.037)0.69 (.027)0.36 (.014) M B A M10.54 (.415)10.29 (.405)2.87 (.113)2.62 (.103)15.24 (.600)14.84 (.584)14.09 (.555)13.47 (.530)1.40 (.055)1.15 (.045)3 X2.54 (.100)2X1 2 34CONFORMS TO JEDEC OUTLINE TO-220ABD im e ns io ns in M illim e ters a nd (In c he s)LE A D A S S IG N M E N T S 1 - G A TE2 - C O LLE C TO R3 - EM IT TE R4 - C O LLE C TO RN O TE S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N TR O LLIN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M ILLIM E TE R S (IN C HES ).4 C O N FO R M S TO JE D E C O U TLIN E T O -220AB.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 10/00元器件交易网Note: For the most current drawings please refer to the IR website at:/package/。

IRF720PBF;IRF720LPBF;IRF720;中文规格书,Datasheet资料

Power MOSFETIRF720, SiHF720Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •Fast Switching •Ease of Paralleling •Simple Drive Requirements•Compliant to RoHS Directive 2002/95/ECDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 30 mH, R g = 25 Ω, I AS = 3.3 A (see fig. 12).c.I SD ≤ 3.3 A, dI/dt ≤ 65 A/μs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)400 VR DS(on) (Ω)V GS = 10 V1.8Q g (Max.) (nC)20Q gs (nC) 3.3Q gd (nC)11ConfigurationSingleTO-220ABGDSORDERING INFORMATIONPackage TO-220AB Lead (Pb)-free IRF720PbF SiHF720-E3 SnPbIRF720SiHF720ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)PA AMETE SYMBOL LIMIT UNIT Drain-Source Voltage V DS400VGate-Source Voltage V GS ± 20VContinuous Drain Current V GS at 10 VT C = 25 °C I D3.3A T C = 100 °C2.1Pulsed Drain Current a I DM 13Linear Derating Factor0.40W/°C Single Pulse Avalanche Energy b E AS 190mJ Repetitive Avalanche Current a I AR 3.3 A Repetitive Avalanche Energy a E AR 5.0mJ Maximum Power Dissipation T C = 25 °CP D 50WPeak Diode Recovery dV/dt cdV/dt 4.0V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in1.1N · mIRF720, SiHF720Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSPA AMETE SYMBOL TYP.MAX.UNITMaximum Junction-to-Ambient R thJA -62°C/W Case-to-Sink, Flat, Greased Surface R thCS 0.50-Maximum Junction-to-Case (Drain)R thJC- 2.5IRF720, SiHF720Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)Fig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °CFig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. TemperatureIRF720, SiHF720 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating AreaIRF720, SiHF720Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRF720, SiHF720Vishay SiliconixFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test CircuitIRF720, SiHF720Vishay SiliconixFig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several q ualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?91043.Package InformationVishay SiliconixTO-220ABNote* M = 1.32 mm to 1.62 mm (dimension including protrusion)Heatsink hole for HVMMILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A 4.25 4.650.1670.183b 0.69 1.010.0270.040b(1) 1.20 1.730.0470.068c 0.360.610.0140.024D 14.8515.490.5850.610E10.0410.510.3950.414e 2.41 2.670.0950.105e(1) 4.88 5.280.1920.208F 1.14 1.400.0450.055H(1)6.09 6.480.2400.255J(1) 2.41 2.920.0950.115L 13.3514.020.5260.552L(1)3.32 3.820.1310.150Ø P 3.54 3.940.1390.155Q2.603.000.1020.118ECN: X10-0416-Rev. M, 01-Nov-10DWG: 5471Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.分销商库存信息:VISHAYIRF720PBF IRF720LPBF IRF720。

IRFR420资料

tf
-
12 18
ns
Qg(TOT) VGS = 10V, ID = 2.5A, VDS = 0.8 x Rated BVDSS
-
13 19 nC
IG(REF) = 1.5mA (Figure 14)
Qgs
Gate Charge is Essentially Independent of Operating Temperature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
DRAIN SOURCE
4-407
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
300 260
oC oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS

纸币器BV20中文技术手册

BV20 程序设置模式 ..................................................................................................................... 8 BV20 配制卡程序设置模式........................................................................................................... 8 如何显示当前 BV20 的接口方式................................................................................................... 8 5.3 附加硬件功能............................................................................................................................ 8 6. 硬件接口协议: ............................................................................................................................ 10 6.1 并行输出:................................................................................................................................ 10 6.2 脉冲输出： ............................................................................................................................. 10 6.5 Smiley® 安全串口协议- SSP.................................................................................................. 10 6.6 MDB 协议 (MDB/ICP)............................................................................................................. 11 7. 如何使用BV20 配置卡................................................................................................................ 11 8. 机械安装..................................................................................................................................... 12 9. 日常维护..................................................................................................................................... 13 9.1 再校验。 ................................................................................................................................. 13 10. 支持工具..................................................................................................................................... 13 10.1 配置卡..................................................................................................................................... 13 10.2 ITL 纸币器管理软件 ................................................................................................................ 13 附件 B – 暂存功能 ......................................................................................................................... 13 附件 C – 接口工具 DA1 – DA2 ...................................................................................................... 14 附件 D – 配置卡 ............................................................................................................................. 16 附件 F – 低功耗模式 ...................................................................................................................... 22

(整理)常用晶体管参数表 (2)

*
180MHZ
NPN
2SC4024
100V
10A
35W
*
*
NPN
2SC3998
1500V
25A
250W
*
*
NPN
2SC3997
1500V
15A
250W
*
*
NPN
2SC3987
50V
3A
20W
1000
*
NPN(达林顿)
2SC3953
120V
0.2A
1.3W
*
400MHZ
NPN
2SC3907
180V
12A
2SC4582
600V
15A
75W
*
*
NPN
2SC4517
550V
3A
30W
*
*
NPN
2SC4429
1100V
8A
60W
*
*
NPN
2SC4297
500V
12A
75W
*
*
NPN
2SC4288
1400V
12A
200W
*
*
NPN
2SC4242
450V
7A
40W
*
*
NPN
2SC4231
800V
2A
30W
*
*
PNP
2SB1240
40V
2A
1W
*
100MHZ
PNP
2SB1238
80V
0.7A
1W
*
100MHZ
PNP
2SB1185
60V

IRGPC20F中文资料

C-69IRGPC20FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORParameter Min.Typ.Max.UnitsR θJC Junction-to-Case—— 2.1R θCS Case-to-Sink, flat, greased surface—0.24—°C/W R θJA Junction-to-Ambient, typical socket mount ——40WtWeight—6 (0.21)—g (oz)Features• Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveV CES = 600V V CE(sat) ≤ 2.8V@V GE = 15V, I C = 9.0ADescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.Absolute Maximum RatingsParameterMax.UnitsV CESCollector-to-Emitter Voltage 600V I C @ T C = 25°C Continuous Collector Current 16I C @ T C = 100°C Continuous Collector Current 9.0AI CM Pulsed Collector Current64I LM Clamped Inductive Load Current 64V GE Gate-to-Emitter Voltage±20V E ARVReverse Voltage Avalanche Energy 5.0mJ P D @ T C = 25°C Maximum Power Dissipation 60WP D @ T C = 100°C Maximum Power Dissipation 24T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting torque, 6-32 or M3 screw.10 lbf•in (1.1N•m)Thermal ResistancePD - 9.1022Revision 0IRGPC20FC-70C-71Fig. 1 - Typical Load Current vs. Frequency(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK )Fig. 2 - Typical Output Characteristics Fig. 3- Typical Transfer CharacteristicsC-72Fig. 5 - Collector-to-Emitter Voltage vs. Case TemperatureFig. 4 - Maximum Collector Current vs.Case TemperatureIRGPC20FIRGPC20FC-73C-74。

IRFBC40中文资料

IRFBC40N -CHANNEL 600V -1.0Ω-6.2A -TO-220PowerMESH ™MOSFETs TYPICAL R DS(on)=1.0Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTEDs VERY LOW INTRINSIC CAPACITANCES sGATE CHARGE MINIMIZEDDESCRIPTIONThis power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY ™process.This technology matches and improves the performances compared with standard parts from various sources.APPLICATIONS s HIGH CURRENT,HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER®INTERNAL SCHEMATIC DIAGRAMAugust 1998ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)600V V DGR Drain-gate Voltage (R GS =20k Ω)600V V GS Gate-source Voltage±20V I D Drain Current (continuous)at T c =25oC 2A ID Drain Current (continuous)at T c =100o C 3.9A I DM (•)Drain Current (pulsed)25A P t ot Total Dissipation at T c =25oC 125W Derating Factor1.0W/oC dv/dt(1)Peak Diode Recovery voltage slope 3V/nsT stg Storage Temperature-65to 150o C T jMax.Operating Junction Temperature150o C(•)Pulse width limited by safe operating area(1)I SD ≤ 6.2A,di/dt ≤ 80A/µs,V DD ≤V (BR)DSS ,Tj ≤T JMAXTYPE V DSS R DS(on)I D IRFBC40600V<1.2Ω6.2A123TO-2201/8THERMAL DATAR t hj-ca se Rthj-amb R thc-si nkT l Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose1.062.50.5300o C/WoC/Wo C/Wo CAVALANCHE CHARACTERISTICSSymbol Parameter Max Value UnitI AR Avalanche Current,Repetitive or Not-Repetitive(pulse width limited by T j max)6.2AE AS Single Pulse Avalanche Energy(starting T j=25o C,I D=I AR,V DD=50V)580mJELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V GS=0600VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating T c=125o C150µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate ThresholdVoltageV DS=V GS I D=250µA234VR DS(on)Static Drain-source OnResistanceV GS=10V I D=3.7A 1.0 1.2ΩI D(o n)On State Drain Current V DS>I D(on)x R DS(on)maxV GS=10V6.2A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg fs(∗)ForwardTransconductanceV DS>I D(on)x R DS(on)max I D=3.7A 4.7SC iss C oss C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=0130018015pFpFpFIRFBC40 2/8ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on TimeRise TimeV DD=300V I D=3.6AR G=4.7 ΩV GS=10V(see test circuit,figure3)188nsnsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=480V I D=6.2A V GS=10V389.913.350nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt r(Vof f) t ft c Off-voltage Rise TimeFall TimeCross-over TimeV DD=480V I D=6.2AR G=4.7 ΩV GS=10V(see test circuit,figure5)8515nsnsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM(•)Source-drain CurrentSource-drain Current(pulsed)6.225AAV SD(∗)Forward On Voltage I SD=6.2A V GS=0 1.6Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=6.2A di/dt=100A/µsV DD=100V T j=150o C(see test circuit,figure5)5304.517nsµCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area Thermal ImpedanceIRFBC403/8Output Characteristics TransconductanceGate Charge vs Gate-source Voltage Transfer CharacteristicsStatic Drain-source On Resistance Capacitance VariationsIRFBC40 4/8Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureIRFBC405/8Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.1:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesIRFBC406/8DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.402.720.0940.107D1 1.270.050E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.010.400.3930.409L216.40.645L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.3.75 3.850.1470.151L6ACDED 1FGL7L2Dia.F 1L5L4H 2L9F 2G 1TO-220MECHANICAL DATAP011CIRFBC407/8Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics ©1998STMicroelectronics –Printed in Italy –All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia -Brazil -Canada -China -France -Germany -Italy -Japan -Korea -Malaysia -Malta -Mexico -Morocco -The Netherlands -Singapore -Spain -Sweden -Switzerland -Taiwan -Thailand -United Kingdom -U.S.A..IRFBC408/8。

LTC6421IUDC-20#PBF中文资料

1642120faTYPICAL APPLICATIONFEATURESAPPLICATIONSDESCRIPTION1.3GHz Differential Ampliﬁ ers/ADC Drivers The L TC ®6421-20 is a dual high speed differential ampliﬁ er targeted at processing signals from DC to 140MHz. The part has been speciﬁ cally designed to drive 12-, 14- and 16-bit ADCs with low noise and low distortion, but can also be used as a general-purpose broadband gain block.The L TC6421-20 is easy to use, with minimal support circuitry required. The output common mode voltage is set using an external pin, independent of the inputs, which eliminates the need for transformers or AC-coupling capacitors in many applications. The gain is internally ﬁ xed at 20dB (10V/V).The L TC6421-20 saves space and power compared to alternative solutions using IF gain blocks and transformers. The LTC6421-20 is packaged in a compact 20-lead 3mm × 4mm QFN package and operates over the –40°C to 85°C temperature range.Distribution of Gain MatchnMatched Gain ±0.1dBn Matched Phase ±0.2° at 100MHz n Channel Separation 80dB at 100MHzn 1.3GHz –3dB Bandwidth; Fixed Gain of 10V/V (20dB)n IMD 3 = –76dBc at 100MHz, 2V P-P n Equivalent OIP 3 = 42dBm at 100MHz n 1nV/√Hz Internal Op Amp Noise n 6.2dB Noise Figuren Differential Inputs and Outputs n Rail-to-Rail Output Swingn 40mA Supply Current (120mW) per Ampliﬁ er n 1V to 1.6V Output Common Mode Voltage, Adjustablen DC- or AC-Coupled Operation n 20-Lead 3mm × 4mm × 0.75mm QFN PackagenDifferential ADC Driver n Differential Driver/Receivern Single Ended to Differential Conversion n IF Sampling (Diversity) ReceiversMatched Dual Ampliﬁ ers with Output Common Mode BiasingL , L T , L TC and L TM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.OCMAOCMAVV OCMBOCMBCHANNEL-TO-CHANNEL GAIN MATCH (dB)–0.25P E R C E N T A G E O F U N I T S4035302520151050.15642120 TA01b–0.15–0.050.050.252642120faABSOLUTE MAXIMUM RATINGSSupply Voltage (V + – V –) .........................................3.6V Input Current (Note 2) ..........................................±10mA Operating Temperature Range (Note 3)....–40°C to 85°C Speciﬁ ed Temperature Range (Note 4) ....–40°C to 85°C Storage Temperature Range ...................–65°C to 150°C Maximum Junction Temperature...........................150°C Output Short-Circuit Duration ..........................Indeﬁ nite(Note 1)2019181778TOP VIEW21UDC PACKAGE20-LEAD (3mm × 4mm) PLASTIC QFN 910654321111213141516+INA –INA V –V ––INB +INB –OUTAV + AV –V –V + B –OUTBV + AV O C M AE N A B L E A+O U T AV + BV O C M BE N A B L E B+O U T BT JMAX = 150°C, θJA = 43°C/W , θJC = 5°C/WEXPOSED PAD (PIN 21) IS V –, MUST BE SOLDERED TO PCBORDER INFORMATIONSELECTOR GUIDEPART NUMBER GAIN(dB)GAIN (V/V)Z IN (DIFFERENTIAL)(Ω)COMMENT SINGLE DUALL TC6400-88 2.5400Lowest Distortion L TC6400-14145200Lowest Distortion L TC6400-20L TC6420-202010200Lowest Distortion L TC6400-26262050Lowest Distortion L TC6401-88 2.5400Lowest Power L TC6401-14145200Lowest Power L TC6401-20L TC6421-202010200Lowest Power L TC6401-26262050Lowest PowerPIN CONFIGURATIONLEAD FREE FINISH TAPE AND REEL PART MARKING*PACKAGE DESCRIPTIONSPECIFIED TEMPERATURE RANGE L TC6421CUDC-20#PBF L TC6421CUDC-20#TRPBF LDDN20-Lead (3mm × 4mm) Plastic QFN 0°C to 70°C L TC6421IUDC-20#PBFL TC6421IUDC-20#TRPBFLDDN20-Lead (3mm × 4mm) Plastic QFN–40°C to 85°CConsult L TC Marketing for parts speciﬁ ed with wider operating temperature ranges. *The temperature grade is identiﬁ ed by a label on the shipping container .Consult L TC Marketing for information on non-standard lead based ﬁ nish parts.For more information on lead free part marking, go to: http://www.linear .com/leadfree/ For more information on tape and reel speciﬁ cations, go to: http://www.linear .com/tapeandreel/DC ELECTRICAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Input/Output CharacteristicG DIFF Gain V IN = ±100mV Differential l19.62020.4dB ΔG Gain Matching Channel-to-Channel l±0.1±0.25dB TC GAIN Gain Temperature Drift V IN = ±100mV Differential l0.0015dB/°C V SWINGMIN Output Swing Low (V OCM = 1.5V)Each Output, V IN = ±400mV Differential l0.10.25V V SWINGMAX Output Swing High (V OCM = 1.5V)Each Output, V IN = ±400mV Differential l 2.75 2.9V V OUTDIFFMAX Maximum Differential Output Swing l5 5.6V P-P I OUT Output Current Drive2V P-P, OUT (Note 10)l10mA V OS Input Offset Voltage Differential l–2±0.42mV TCV OS Input Offset Voltage Drift Differential l 1.4μV/°C I VRMIN Input Common Mode Voltage Range, MIN l1V I VRMAX Input Common Mode Voltage Range, MAX l 1.6V R INDIFF Input Resistance (+IN, –IN)Differential l170200230ΩΔR IN Input Impedance Matching Channel-to-Channel l±1±2.5% C INDIFF Input Capacitance (+IN, –IN)Differential, Includes Parasitic1pF R OUTDIFF Output Resistance (+OUT, –OUT)Differential l202536ΩCMRR Common Mode Rejection Ratio Input Common Mode Voltage 1V to 1.6V l4568dB Output Common Mode Voltage ControlG CM Common Mode Gain V OCM = 1V to 1.6V1V/V V OCMMIN Output Common Mode Range, MIN l1V V OCMMAX Output Common Mode Range, MAX l 1.6V V OSCM Common Mode Offset Voltage V OCM = 1.25V to 1.5V l–10±210mV TCV OSCM Common Mode Offset Voltage Drift l6μV/°C IV OCM V OCM Input Current l–15–30μA ENABLE x Pins (x = A, B)V IL ENABLEx Input Low Voltage l0.8V V IH ENABLEx Input High Voltage l 2.4VENABLEx Input Current ENABLEx ≤ 0.8VENABLEx ≥2.4V ll 1.5±0.53μAμAPower SupplyV S Operating Supply Range l 2.853 3.5V I S Supply Current ENABLEx≤ 0.8V; per Ampliﬁ er l4050mA I SHDN Shutdown Supply Current ENABLEx≥ 2.4V; per Ampliﬁ er,Inputs Floatingl13mAPSRR Power Supply Rejection Ratio (DifferentialOutputs)V+ = 2.85V to 3.5V l5586dBThel denotes the speciﬁ cations which apply over the full operating temperature range, otherwise speciﬁ cations are at T A = 25°C. V+ = 3V, V– = 0V, +IN = –IN = V OCM = 1.25V, ENABLE = 0V, No R L unless otherwise noted.3642120faAC ELECTRICAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS ΔG Gain Matching f = 100MHz (Note 9)l±0.1±0.25dB ΔP Phase Matching f = 100MHz±0.2deg Channel Separation (Note 8) f = 100MHz80dB –3dBBW–3dB Bandwidth200mV P-P, OUT (Note 6) 1.3GHz 0.5dBBW Bandwidth for 0.5dB Flatness200mV P-P, OUT (Note 6)250MHz 0.1dBBW Bandwidth for 0.1dB Flatness200mV P-P, OUT (Note 6)130MHz NF Noise Figure R L = 375Ω (Note 5), f = 100MHz 6.2dB e IN Input Referred Voltage Noise Density Includes Resistors (Short Inputs), f = 100MHz 2.2nV/√Hz e ON Output Referred Voltage Noise Density Includes Resistors (Short Inputs), f = 100MHz22nV/√Hz 1/f1/f Noise Corner12.5kHz SR Slew Rate Differential (Note 6)4500V/μs t S1%1% Settling Time2V P-P, OUT (Note 6)2ns t OVDR Overdrive Recovery Time 1.9V P-P, OUT (Note 6) Single Ended7ns P1dB1dB Compression Point R L = 375Ω (Notes 5, 7), f = 100MHz18dBm t ON Turn-On Time+OUT, –OUT Within 10% of Final Values80ns t OFF Turn-Off Time I CC Falls to 10% of Nominal150ns –3dBBW VOCM V OCM Pin Small Signal –3dB BW0.1V P-P at V OCM, Measured Single-Ended atOutput (Note 6)15MHzIMD33rd Order Intermodulation Distortion f = 100MHz (1MHz Spacing),V OUT = 2V P-P Composite–76dBc OIP33rd Order Output Intercept f = 100MHz (Note 7)42dBcIIP33rd Order Input Intercept f = 100MHz (Z IN = 50Ω)f = 100MHz (Z IN = 200Ω)2216dBcdBcHD22nd Order Harmonic Distortion f = 100MHz, V OUT = 2V P-P–74dBc HD33rd Order Harmonic Distortion f = 100MHz, V OUT = 2V P-P–78dBcNote 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.Note 2: Input pins (+IN, –IN) are protected by steering diodes to either supply. If the inputs go beyond either supply rail, the input current should be limited to less than 10mA.Note 3: The L TC6421C and L TC6421I are guaranteed functional over the operating temperature range of –40°C to 85°C.Note 4: The L TC6421C is guaranteed to meet speciﬁ ed performance from 0°C to 70°C. It is designed, characterized and expected to meet speciﬁ ed performance from –40°C to 85°C but is not tested or QA sampled at these temperatures. The L TC6421I is guaranteed to meet speciﬁ ed performance from –40°C to 85°C.Note 5: Input and output baluns used. See Test Circuit A.Note 6: Measured using Test Circuit B. R L = 87.5Ω on each output.Note 7: Since the L TC6421-20 is a feedback ampliﬁ er with low output impedance, a resistive load is not required when driving an AD converter. Therefore, typical output power is very small. In order to compare theL TC6421-20 with ampliﬁ ers that require 50Ω output load, the output voltage swing driving a given R L is converted to OIP3 and P1dB as if it were driving a 50Ω load. Using this modiﬁ ed convention, 2V P-P is by deﬁ nition equal to 10dBm, regardless of actual R L.Note 8: Channel separation (the inverse of crosstalk) is measured by driving a signal into one input, while terminating the other input. Channel separation is the ratio of the resulting output signal at the driven channel to the channel that is not driven.Note 9: Not production tested. Guaranteed by design and by correlation to production tested parameters.Note 10: The output swing range is at least 2V P-P differential even when sourcing or sinking 20mA. Tested at V OCM = 1.5V.Thel denotes the speciﬁ cations which apply over the full operating temperature range, otherwise speciﬁ cations are at T A = 25°C. V+ = 3V, V– = 0V, V OCM = 1.25V, ENABLE = 0V, No R L unless otherwise noted.4642120fa5642120faInput and Output Impedance vs FrequencyNoise Figure and Input Referred Noise Voltage vs FrequencySmall-Signal Transient ResponseTYPICAL PERFORMANCE CHARACTERISTICSFrequency ResponseChannel-to-Channel Gain Match vs FrequencyInput and Output Reﬂ ection and Reverse Isolation vs FrequencyFREQUENCY (MHz)10–0.1G A I N M A T C H (d B )00.10.20.310010002000642120 G01–0.2–0.3–0.4–0.50.40.5FREQUENCY (MHz)10–0.1G R O U P D E L A Y M A T C H (n s )00.10.20.310010002000642120 G02–0.2–0.3–0.4–0.50.40.5FREQUENCY (MHz)10–1.0P H A S E M A T C H (D E G )–0.51.0100500642120 G030.5Channel-to-Channel Group Delay Match vs FrequencyChannel-to-Channel Phase Match vs FrequencyFREQUENCY (MHz)1010010003000G A I N (d B )2520151050642120 G04S21 Phase and Group Delay vs FrequencyFREQUENCY (MHz)0P H A S E (D E G R E E )100–100–200–300–400GROUP DELAY (ns)1.51.20.90.60.302004006008001000642120 G05FREQUENCY (MHz)10S P A R A M E T E R S (d B )0–10–20–30–40–50–60–70–8010010003000642120 G06FREQUENCY (MHz)1I M P E D A N C E M A G N I T U D E (Ω)2502001501005002251751257525IMPEDANCE PHASE (DEGREE)10080604020–80–60–40–200–100101001000642120 G07FREQUENCY (MHz)10N O I S E F I G U R E (d B )1510241214680113513791INPUT REFERRED NOISE VOLTAGE (nV/√Hz)64201001000642120 G08TIME (ns)0O U T P U T V O L T A G E (V )1.351.201.251.301.155101520642120 G096642120faHarmonic Distortion vs FrequencyTYPICAL PERFORMANCE CHARACTERISTICSThird Order Intermodulation Distortion vs FrequencyEquivalent Output Third Order Intercept vs FrequencyChannel Separation vs FrequencyOverdrive Transient ResponseTIME (ns)O U T P U T V O L T A G E (V )2.50.51.02.01.5050100150200642120 G10050100150200–40–50–60–80–90–70–120–110–100FREQUENCY (MHz)T H I R D O R D E R I M D (d B c )642120 G12050100150200FREQUENCY (MHz)642120 G13O U T P U T I P 3 (d B m )706050402010300FREQUENCY (MHz)140C H A N N E L S E P A R A T I O N (d B )6080101001000642120 G142040120100FREQUENCY (MHz)–100H A R M O N I C D I S T R O T I O N (d B c )–90–80–70–60–50–4050100150200642120 G11PIN FUNCTIONS+INA, –INA, –INB, +INB (Pins 1, 2, 5, 6): Differential Inputs of A and B channel respectively.V– (Pins 3, 4, 13, 14, 21): Negative Power Supply. All four pins, as well as the exposed back, must be connected to same voltage/ground.ENABLEA, ENABLEB (Pins 9, 18): Logic inputs. If low, the ampliﬁ er is enabled. If high, the ampliﬁ er is disabled and placed in a low-power shutdown mode, making the ampliﬁ er outputs high impedance. These pins are internally separate. These pins should not be left ﬂ oating.V+ A , V+ B (Pins 15, 20, 7, 12 ): Positive Power Supply (Normally tied to 3V or 3.3V). Supply pins of A and B channels are internally separate. Bypass each pin with 1000pF and 0.1μF capacitors as close to the pins as possible.–OUTA, +OUTA, –OUTB, +OUTB (Pins 16, 17, 11, 10): Differential Outputs of channels A and B respectively.V OCMA, V OCMB (Pins 19, 8): These pins set the output common mode voltage for the respective channel. They are internally separate. A 0.1μF external bypass capacitor is recommended.Exposed Pad (Pin 21): V–. The Exposed Pad must be connected to same voltage/ground as pins 3, 4, 13, 14.7642120fa8642120faBLOCK DIAGRAMV +BV +A –OUTA –OUTBOCMB+INA –INA V –V –V –V –+–INB +INB9642120faCircuit OperationEach of the two channels of the L TC6421-20 is composed of a fully differential ampliﬁ er with on chip feedback and output common mode voltage control circuitry. Differential gain and input impedance are set by 100Ω/1000Ω resistors in the feedback network. Small output resistors of 12.5Ω improve the circuit stability over various load conditions.The L TC6421-20 is very ﬂ exible in terms of I/O coupling. It can be AC- or DC-coupled at the inputs, the outputs or both. If the inputs are AC-coupled, the input common mode voltage is automatically biased close to V OCM and thus no external circuitry is needed for bias. The L TC6421-20 provides an output common mode voltage set by V OCM , which allows driving an ADC directly without external components s uch a s a t ransformer o r A C c oupling c apacitors. The input signal can be either single-ended or differential with only minor differences in distortion performance.Figure 1. Input Termination for Differential 50Ω Input Impedance Using Shunt Resistor Figure 2. Input Termination for Differential 50Ω Input Impedance Using a 1:4 BalunAPPLICATIONS INFORMATIONInput Impedance and MatchingThe differential input impedance of the L TC6421-20 is 200Ω. If a 200Ω source impedance is unavailable, then the differential inputs may need to be terminated to a lower value impedance, e.g. 50Ω, in order to provide an impedance match for the source. Several choices are available. One approach is to use a differential shunt resistor (Figure 1). Another approach is to employ a wideband transformer (F igure 2). Both methods provide a wide band impedance match. The termination resistor or the transformer must be placed close to the input pins inorder to minimize the reﬂection due to input mismatch. Alternatively, one could apply a narrowband impedance match at the inputs of the L TC6421-20 for frequency selection and/or noise reduction.APPLICATIONS INFORMATION Referring to Figure 3, L TC6421-20 can be easily conﬁ gured for single-ended input and differential output without a balun. The signal is fed to one of the inputs through a matching network while the other input is connected to the same matching network and a source resistor. Because the return ratios of the two feedback paths are equal, the two outputs have the same gain and thus symmetrical swing. In general, the single-ended input impedance and termination resistor R T are determined by the combination of R S, R G and R F. For example, when R S is 50Ω, it is found that the single-ended input impedance is 202Ω and R T is 66.5Ωin order to match to a 50Ω source impedance.The LTC6421-20 is unconditionally stable. However, the overall differential gain is affected by both source impedance and load impedance as follows:A V=V OUTV IN=2000R S+200•R L25+R LFigure 3. Input Termination for Single-Ended 50Ω Input ImpedanceOutput Impedance MatchThe L TC6421-20 can drive an ADC directly without externaloutput impedance matching. Alternatively, the differentialoutput impedance of 25Ω can be matched to a highervalue impedance, e.g. 50Ω, by series resistors or an LCnetwork.Output Common Mode AdjustmentThe output common mode voltage is set by the V OCM pin,which is a high impedance input. The output commonmode voltage is capable of tracking V OCM in a range from1V to 1.6V. The bandwidth of V OCM control is typically15MHz, which is dominated by a low pass ﬁ lter connectedto the V OCM pin and is aimed to reduce common modenoise generation at the outputs. The internal commonmode feedback loop has a –3dB bandwidth of 300MHz,allowing fast rejection of any common mode output voltagedisturbance. The V OCM pin should be tied to a DC bias10642120favoltage with a 0.1μF bypass capacitor. When interfacing with A/D converters such as the L TC22xx families, the V OCM pin can be connected to the V CM pin of the ADC. Driving A/D ConvertersThe L TC6421-20 has been speciﬁ cally designed to interface directly with high speed A/D converters. The back page of this data sheet shows the L TC6421-20 driving an L TC2285, which is a dual 14-bit, 125Msps ADC.The V OCM pins of the L TC6421-20 are connected to the V CM pins of the L TC2285, which provide a DC voltage level of 1.5V. Both ICs are powered from the same 3V supply voltage.The inputs to the L TC6421-20 can be conﬁ gured in various ways, as described in the Input Impedance and Matching section of this datasheet. The outputs of the L TC6421-20 may be connected directly to the analog inputs of an ADC, or a simple lowpass or bandpass ﬁ lter network may be inserted to reduce out-of-band noise. Test CircuitsDue to the fully-differential design of the L TC6421 and its usefulness in applications with differing characteristic speciﬁ cations, two test circuits are used to generate the information in this datasheet. Test Circuit A is DC1299, a two-port demonstration circuit for the L TC6420/L TC6421 family. The schematic and silkscreen are shown in F igure 4. This circuit includes input and output transformers (baluns) for single-ended-to-differential conversion and impedance transformation, allowing direct hook-up to a 2-port network analyzer. There are also series resistors at the output to avoid loading the ampliﬁ er directly with a 50Ω load. Due to the input and output transformers, the –3dB bandwidth is reduced from 1.3GHz to approximately 1.1GHz.Test Circuit B uses a 4-port network analyzer to measure S-parameters and gain/phase response. This removes the effects of the wideband baluns and associated circuitry, for a true picture of the >1GHz S-parameters and AC characteristics.APPLICATIONS INFORMATION11642120faAPPLICATIONS INFORMATIONFigure 4a. Top Silkscreen of DC1299 (Test Circuit A)12642120fa13642120faAPPLICATIONS INFORMATION+INA+INB+V V V Figure 4b. Demo Circuit 1299 Schematic (Test Circuit A)TYPICAL APPLICATIONSTest Circuit B, 4-Port Measurements(Only the Signal-Path Connections Are Shown)Parallel ADC Drivers to Reduce Wideband Noise14642120fa15642120faInformation furnished by Linear Technology Corporation is believed to be accurate and reliable. However , no responsibility is assumed for its use. Linear Technology Corporation makes no representa-tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.UDC Package20-Lead Plastic QFN (3mm × 4mm)(Reference L TC DWG # 05-08-1742 Rev Ø)PACKAGE DESCRIPTIONNOTE:1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE2. DRAWING NOT TO SCALE3. ALL DIMENSIONS ARE IN MILLIMETERS4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDEMOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGEBOTTOM VIEW—EXPOSED PADPIN 1 NOTCH RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED16642120faLinear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417(408) 432-1900 ● FAX: (408) 434-0507 ● © LINEAR TECHNOLOGY CORPORA TION 2008LT 1008 REV A • PRINTED IN USARELATED PARTSPART NUMBER DESCRIPTIONCOMMENTSHigh-Speed Differential Ampliﬁ ers/Differential Op AmpsL T ®1993-2800MHz Differential Ampliﬁ er/ADC Driver A V = 2V/V , OIP3 = 38dBm at 70MHz L T1993-4900MHz Differential Ampliﬁ er/ADC Driver A V = 4V/V , OIP3 = 40dBm at 70MHz L T1993-10700MHz Differential Ampliﬁ er/ADC Driver A V = 10V/V , OIP3 = 40dBm at 70MHzL T1994Low Noise, Low Distortion Differential Op Amp 16-Bit SNR and SFDR at 1MHz, Rail-to-Rail OutputsL T5514Ultralow Distortion IF Ampliﬁ er/ADC Driver with Digitally Controlled GainOIP3 = 47dBm at 100MHz, Gain Control Range 10.5dB to 33dB L T5524Low Distortion IF Ampliﬁ er/ADC Driver with Digitally Controlled GainOIP3 = 40dBm at 100MHz, Gain Control Range 4.5dB to 37dB L TC6400-14/L TC6400-20/L TC6400-26Low Noise, Low Distortion, Differential ADC DriversA V = 14dB/20dB/26dB, Single Ampliﬁer per IC, High Performance L TC6401-8/ L TC6401-14/ L TC6401-20/L TC6401-26Low Noise, Low Distortion, Differential ADC DriversA V = 8dB/14dB/20dB/26dB, Single Ampliﬁ er per IC, Low PowerL T6402-6300MHz Differential Ampliﬁ er/ADC Driver A V = 6dB, Distortion < –80dBc at 25MHz L T6402-12300MHz Differential Ampliﬁ er/ADC Driver A V = 12dB, Distortion < –80dBc at 25MHz L T6402-20300MHz Differential Ampliﬁ er/ADC DriverA V = 20dB, Distortion < –80dBc at 25MHzL TC6404-1600MHz, Low Noise, AC Precision, Fully DifferentialInput/Output Ampliﬁ er/Driver A V = Unity Gain, e n = 1.5nV/Hz, Distortion < –90dBc at 10MHz L TC6404-2900MHz, Low Noise, AC Precision, Fully Differential Input/Output Ampliﬁ er/Driver A V = 2V/V , e n = 1.5nV/Hz, Distortion < –95dBc at 10MHz L TC6404-41800MHz, Low Noise, AC Precision, Fully Differential Input/Output Ampliﬁ er/Driver A V = 4V/V , e n = 1.5nV/Hz, Distortion < –98dBc at 10MHz L TC64063GHz Rail-to-Rail Input Differential Op Amp1.6nV/√Hz Noise, –72dBc Distortion at 50MHz, 18mAL T6411Low Power Differential ADC Driver/Dual Selectable Gain Ampliﬁ er16mA Supply Current, IMD3 = –83dBc at 70MHz, A V = 1, –1 or 2TYPICAL APPLICATIONDual ADC Driver for Wideband Direct-Conversion Receivers642120 TA03–3dB FIL TER BANDWIDTH = 140MHz。

常用三极管型号及参数

常用三极管型号及参数晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 IRFU020 50V 15A 42W NMOS场效应 IRFPG42 1000V 4A 150W NMOS场效应IRFPF40 900V 4.7A 150W NMOS场效应IRFP9240 200V 12A 150W PMOS场效应IRFP9140 100V 19A 150W PMOS场效应IRFP460 500V 20A 250W NMOS场效应IRFP450 500V 14A 180W NMOS场效应 IRFP440 500V 8A 150W NMOS场效应IRFP353 350V 14A 180W NMOS场效应IRFP350 400V 16A 180W NMOS场效应 IRFP340 400V 10A 150W NMOS 场效应 IRFP250 200V 33A 180W NMOS场效应 IRFP240 200V 19A 150W NMOS场效应 IRFP150 100V 40A 180W NMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 IRFP140 100V 30A 150W NMOS场效应 IRFP054 60V 65A 180W NMOS场效应 IRFI744 400V 4A 32W NMOS场效应 IRFI730 400V 4A 32W NMOS场效应 IRFD9120 100V 1A 1W NMOS场效应IRFD123 80V 1.1A 1W NMOS场效应IRFD120 100V 1.3A 1W NMOS场效应 IRFD113 60V 0.8A 1W NMOS场效应 IRFBE30 800V 2.8A 75W NMOS场效应 IRFBC40 600V 6.2A 125W NMOS场效应IRFBC30 600V 3.6A 74W NMOS场效应 IRFBC20 600V 2.5A 50W NMOS场效应IRFS9630 200V 6.5A 75W PMOS场效应IRF9630 200V 6.5A 75W PMOS场效应 IRF9610 200V 1A 20W PMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRF9541 60V 19A 125W PMOS场效应IRF9531 60V 12A 75W PMOS场效应 IRF9530 100V 12A 75W PMOS场效应 IRF840 500V 8A 125W NMOS场效应 IRF830 500V 4.5A 75W NMOS场效应 IRF740 400V 10A 125W NMOS场效应 IRF730 400V 5.5A 75WNMOS场效应 IRF720 400V 3.3A 50W NMOS场效应 IRF640 200V 18A 125W NMOS场效应IRF630 200V 9A 75W NMOS场效应IRF610 200V 3.3A 43W NMOS场效应IRF541 80V 28A 150W NMOS场效应 IRF540 100V 28A 150W NMOS场效应 IRF530 100V 14A 79W NMOS场效应 IRF440 500V 8A 125W NMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 IRF230 200V 9A 79W NMOS场效应 IRF130 100V 14A 79W NMOS场效应 BUZ20 100V 12A 75W NMOS场效应 BUZ11A 50V 25A 75W NMOS场效应BS170 60V 0.3A 0.63W NMOS场效应2SC4582 600V 15A 75W NPN 2SC4517 550V 3A 30W NPN 2SC4429 1100V 8A 60W NPN 2SC4297 500V 12A 75W NPN 2SC4288 1400V 12A 200W NPN 2SC4242 450V 7A 40W NPN 2SC4231 800V 2A 30W NPN 2SC4119 1500V 15A 250W NPN 2SC4111 1500V 10A 250W NPN 2SC4106 500V 7A 50W 20MHZ NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SC4059 600V 15A 130W NPN 2SC4038 50V 0.1A 0.3W 180MHZ NPN 2SC4024 100V 10A 35W NPN 2SC3998 1500V 25A 250W NPN 2SC3997 1500V 15A 250W NPN 2SC3987 50V 3A 20W 1000 NPN(达林顿) 2SC3953 120V 0.2A 1.3W 400MHZ NPN 2SC3907 180V 12A 130W 30MHZ NPN 2SC3893 1400V 8A 50W 8MHZ NPN 2SC3886 1400V 8A 50W 8MHZ NPN 2SC3873 500V 12A 75W 30MHZ NPN 2SC3866 900V 3A 40W NPN 2SC3858 200V 17A 200W 20MHZ NPN 2SC3807 30V 2A 1.2W 260MHZ NPN 2SC3783 900V 5A 100W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SC3720 1200V 10A 200W NPN 2SC3680 900V 7A 120WNPN 2SC3679 900V 5A 100W NPN 2SC3595 30V 0.5A 1.2W 90 NPN 2SC3527 500V 15A 100W 13 NPN 2SC3505 900V 6A 80W 12 NPN 2SC3460 1100V 6A 100W 12 NPN 2SC3457 1100V 3A 50W 12 NPN 2SC3358 20V 0.15A 7000MHZ NPN 2SC3355 20V 0.15A 6500MHZ NPN 2SC3320 500V 15A 80W NPN 2SC3310 500V 5A 40W 20 NPN 2SC3300 100V 15A 100W NPN 2SC1855 20V 0.02A 0.25W 550MHZ NPN 2SC1507 300V 0.2A 15W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SC1494 36V 6A 40W 175MHZ NPN 2SC1222 60V 0.1A 0.25W 100MHZ NPN 2SC1162 35V 1.5A 10W NPN 2SC1008 80V 0.7A 0.8W 50MHZ NPN 2SC900 30V 0.03A 0.25W 100MHZ NPN 2SC828 45V 0.05A 0.25W NPN 2SC815 60V 0.2A 0.25W NPN 2SC380 35V 0.03A 0.25W NPN 2SC106 60V 1.5A 15W NPN 2SB1494 120V 25A 120W PNP(达林顿） 2SB1429 180V 15A 150W PNP 2SB1400 120V 6A 25W 1000-20000 PNP(达林顿） 2SB1375 60V 3A 2W PNP 2SB1335 80V 4A 30W PNP 2SB1317 180V 15A 150W PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SB1316 100V 2A 10W 15000 PNP(达林顿） 2SB1243 40V 3A 1W 70MHZ PNP 2SB1240 40V 2A 1W 100MHZ PNP 2SB1238 80V 0.7A 1W 100MHZ PNP 2SB1185 60V 3A 25W 75MHZ PNP 2SB1079 100V 20A 100W 5000 PNP(达林顿） 2SB1020 100V 7A 40W 6000 PNP(达林顿） 2SB834 60V 3A 30W PNP 2SB817 160V 12A 100W PNP 2SB772 40V 3A 10W PNP 2SB744 70V 3A 10W PNP 2SB734 60V 1A 1W PNP 2SB688 120V 8A 80W PNP 2SB675 60V 7A 40W PNP(达林顿） 2SB669 70V 4A 40W PNP(达林顿）晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SB649 180V 1.5A 1W PNP 2SB647 120V 1A 0.9W 140MHZ PNP 2SB449 50V 3.5A 22W PNP 2SA1943 230V 15A 150W PNP 2SA1785 400V 1A 1W 140MHZ PNP 2SA1668 200V 2A 25W 20MHZ PNP 2SA1516 180V 12A 130W 25MHZ PNP 2SA1494 200V 17A 200W 20MHZ PNP 2SA1444 100V 1.5A 2W 80MHZ PNP 2SA1358 120V 1A 10W 120MHZ PNP 2SA1302 200V 15A 150W PNP 2SA1301 200V 10A 100W PNP 2SA1295 230V 17A 200W PNP 2SA1265 140V 10A 30W PNP 2SA1216 180V 17A 200W PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SA1162 50V 0.15A 0.15W PNP 2SA1123 150V 0.05A 0.75W PNP 2SA1020 50V 2A 0.9W PNP 2SA1009 350V 2A 15W PNP 2N6678 650V 15A 175W NPN 2N5685 60V 50A 300W NPN 2N6277 180V 50A 300W NPN 2N5551 160V 0.6A 0.6W 100MHZ NPN 2N5401 160V 0.6A 0.6W 100MHZ PNP 2N3773 160V 16A 150W NPN 2N3440 450V 1A 1W NPN 2N3055 100V 15A 115W NPN 2N2907 60V 0.6A 0.4W 200 NPN 2N2369 40V 0.5A 0.3W 800MHZ NPN 2N2222 60V 0.8A 0.5W 45 NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型9018 30V 0.05A 0.4W 1G NPN 9015 50V 0.1A 0.4W 150MHZ PNP 9014 50V 0.1A 0.4W 150MHZ NPN 9013 50V 0.5A 0.6W NPN 9012 50V 0.5A 0.6W PNP 9011 50V 0.03A 0.4W 150MHZ NPN TIP147 100V 10A 125W PNP TIP142 100V 10A 125W NPN TIP127 100V 8A 65W PNP TIP122 100V 8A 65W NPN TIP102 100V 8A 2W NPN TIP42C 100V 6A 65W PNP TIP41C 100V 6A 65W NPN TIP36C 100V 25A 125W PNP TIP35C 100V 25A 125W NPN子类型TIP32C 100V 3A 40W PNP TIP31C 100V 3A 40W NPN MJE13007 1500V 2.5A 60W NPN MJE13005 400V 4A 60W NPN MJE13003 400V 1.5A 14W NPN MJE2955T 60V 10A 75W NPN MJE350 300V 0.5A 20W NPN MJE340 300V 0.5A 20W NPN MJ15025 400V 16A 250W PNP MJ15024 400V 16A 250W NPN MJ13333 400V 20A 175W NPN MJ11033 120V 50A 300W NPN MJ11032 120V 50A 300W NPN MJ10025 850V 20A 250W NPN MJ10016 500V 50A 200W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 BUS13A 1000V 15A 175W NPN BUH515 1500V 10A 80W NPN BU2532 1500V 15A 150W NPN BU2527 1500V 15A 150W NPN BU2525 1500V 12A 150W NPN BU2522 1500V 11A 150W NPN BU2520 800V 10A 150W NPN BU2508 700V 8A 125W NPN BU2506 1500V 7A 50W NPN BU932R 500V 15A 150W NPN BU806 400V 8A 60W NPN BU406 400V 7A 60W NPN BU323 450V 10A 125W NPN(达林顿) BF458 250V 0.1A 10W NPN BD682 100V 4A 40W PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 MJ10015 400V 50A 200W NPN MJ10012 400V 10A 175W NPN(达林顿) MJ4502 90V 30A 200W PNP MJ3055 60V 15A 115W NPN MJ2955 60V 15A 115W PNP MN650 1500V 6A 80W NPN BUX98A 400V 30A 210W NPN BUX84 800V 2A 40W NPN BUW13A 1000V 15A 150W NPN BUV48A 450V 15A 150W NPN BUV28A 225V 10A 65W NPN BUV26 90V 14A 65W NPN BUT12A 450V 10A 125W NPN BUT11A 1000V 5A 100W NPN BUS14A 1000V 30A 250W NPN子类型 BD681 100V 4A 40W NPN BD244 45V 6A 65W PNP BD243 45V 6A 65W NPN BD238 100V 2A 25W PNP BD237 100V 2A 25W NPN BD138 60V 1.5A 12.5W PNP BD137 60V 1.5A 12.5W NPN BD136 45V 1.5A 12.5W PNP BD135 45V 1.5A 12.5W NPN BC547 50V 0.2A 0.5W 300MHZ NPN BC546 80V 0.2A 0.5W NPN BC338 50V 0.8A 0.6W NPN BC337 50V 0.8A 0.6W NPN BC327 50V 0.8 0.6W PNP BC307 50V 0.2AA 0.3W PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SDK55 400V 4A 60W NPN 2SD2445 1500V 12.5A 120W NPN 2SD2388 90V 3A 1.2W NPN(达林顿) 2SD2335 1500V 7A 100W NPN 2SD2334 1500V 5A 80W NPN 2SD2156 120V 25A 125W 2000-20000 NPN(达林顿) 2SD2155 180V 15A 150W NPN 2SD2036 60V 1A 1.2W NPN 2SD2012 60V 3A 2W NPN 2SD2008 80V 1A 1.5W NPN 2SD1997 40V 3A 1.5W 100MHZ NPN 2SD1994 60V 1A 1W NPN 2SD1993 50V 0.1A 0.4W NPN 2SD1980 100V 2A 10W 1000-10000 NPN(达林顿) 2SD1978 120V 1.5A 1W 30000 NPN(达林顿)晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SD1975 180V 15A 150W NPN 2SD1930 100V 2A 1.2W 1000 NPN(达林顿) 2SD1847 50V 1A 1W NPN(低噪) 2SD1762 60V 3A 25W 90MHZ NPN 2SD1718 180V 15A 3.2W 20MHZ NPN 2SD1640 120V 2A 1.2W 4000-40000 NPN(达林顿) 2SD1590 150V 8A 25W 15000 NPN(达林顿) 2SD1559 100V 20A 20W 5000 NPN(达林顿) 2SD1415 80V 7A 40W 6000 NPN(达林顿) 2SD1416 80V 7A 40W 6000 NPN(达林顿) 2SD1302 25V 0.5A 0.5W 200MHZ NPN 2SD1273 80V 3A 40W 50MHZ NPN 2SD1163A 350V 7A 40W 60MHZ NPN 2SD1047 160V 12A 100W NPN 2SD1037 150V 30A180W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1025 200V 8A 50W NPN(达林顿) 2SD789 100V 1A 0.9W NPN 2SD774 100V 1A 1W NPN 2SD669 180V 1.5A 1W 140MHZ NPN 2SD667 120V 1A 0.9W 140MHZ NPN(达林顿) 2SD560 150V 5A 30W NPN(达林顿) 2SD547 600V 50A 400W NPN 2SD438 500V 1A 0.75W 100MHZ NPN 2SD415 120V 0.8A 5W NPN 2SD385 100V 7A 30W NPN(达林顿) 2SD325 50V 3A 25W NPN 2SD40C 40V 0.5A 40W NPN(达林顿) 2SC5252 1500V 15A 100W NPN 2SC5251 1500V 12A 50W NPN 2SC5250 1000V 7A 100W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC5244 1500V 15A 200W NPN 2SC5243 1500V 15A 200W NPN 2SC5207 1500V 10A 50W NPN 2sc5200 230V 15A 150W NPN 2sc5132 1500V 16A 50W NPN 2sc5088 1500V 10A 50W NPN 2sc5086 1500V 10A 50W NPN 2sc5068 1500V 10A 50W NPN 2sc5020 1000V 7A 100W NPN 2sc4953 500V 2A 25W NPN 2sc4941 1500V 6A 65W NPN 2sc4927 1500V 8A 50W NPN 2sc4924 800V 10A 70W NPN 2sc4913 2000V 0.2A 35W NPN 2sc4769 1500V 7A 60W NPN(带阻尼)晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2sc4747 1500V 10A 50W NPN 2sc4745 1500V 6A 50W NPN 2sc4742 1500V 6A 50W NPN(带阻尼) 2sc4706 900V 14A 130W 6MH NPN 2SD1887 1500V 10A 70W NPN 2SD1886 1500V 8A 70W NPN 2SD1885 1500V 6A 60W NPN 2SD1884 1500V 5A 60W NPN 2SD1883 1500V 4A 50W NPN 2SD1882 1500V 3A 50W NPN 2SD1881 1500V 10A 70W NPN 2SD1880 1500V 8A 70W2SD1876 1500V 3A 50W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SD1739 1500V 6A 100W NPN 2SD1738 1500V 5A 100W NPN 2SD1737 1500V 3.5A 60W NPN 2SD1732 1500V 7A 120W NPN 2SD1731 1500V 6A 100W NPN 2SD1730 1500V 5A 100W NPN 2SD1729 1500V 3.5A 60W NPN 2SD1711 1500V 7A 100W NPN 2SD1710 1500V 6A 100W NPN 2SD1656 1500V 6A 60W NPN 2SD1655 1500V 5A 60W NPN 2SD1654 1500V 3.5A 50W NPN 2SD1653 1500V 2.5A 50W NPN 2SD1652 1500V 6A 60W NPN 2SD1651 1500V 5A 60W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SD1650 1500V 3.5A 50W NPN 2SD1635 1500V 5A 100W NPN 2SD1632 1500V 4A 70W NPN 2SD1577 1500V 5A 80W NPN 2SD1554 1500V 3.5A 40W NPN 2SD1548 1500V 10A 50W NPN 2SD1547 1500V 7A 50W NPN 2SD1546 1500V 6A 50W NPN 2SD1545 1500V 5A 50W NPN 2SD1456 1500V 6A 50W NPN 2SD1455 1500V 5A 50W NPN 2SD1454 1700V 4A 50W NPN 2SD1434 1700V 5A 80W NPN 2SD1431 1500V 5A 80W NPN 2SD1426 1500V 3.5A 80W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SD1402 1500V 5A 120W NPN 2SD1399 1500V 6A 60W NPN 2SD1344 1500V 6A 50W NPN 2SD1343 1500V 6A 50W NPN 2SD1342 1500V 5A 50W NPN 2SD1941 1500V 6A 50W NPN 2SD1911 1500V 5A 50W NPN 2SD1341 1500V 5A 50W NPN 2SD1219 1500V 3A 65W NPN 2SD1290 1500V 3A 50W NPN 2SD1175 1500V 5A 100W NPN 2SD1174 1500V 5A 85W NPN2SD1143 1500V 5A 65W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SD1142 1500V 3.5A 50W NPN 2SD1016 1500V 7A 50W NPN 2SD995 2500V 3A 50W NPN 2SD994 1500V 8A 50W NPN 2SD957A 1500V 6A 50W NPN 2SD954 1500V 5A 95W NPN 2SD952 1500V 3A 70W NPN 2SD904 1500V 7A 60W NPN 2SD903 1500V 7A 50W NPN 2SD871 1500V 6A 50W NPN 2SD870 1500V 5A 50W NPN 2SD869 1500V 3.5A 50W NPN 2SD838 2500V 3A 50W NPN 2SD822 1500V 7A 50W NPN 2SD821 1500V 6A 50W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD348 1500V 7A 50W NPN 2SC4303A 1500V 6A 80W NPN 2SC4292 1500V 6A 100W NPN 2SC4291 1500V 5A 100W NPN 2SC4199A 1500V 10A 100W NPN 2SC3883 1500V 5A 50W NPN 2SC3729 1500V 5A 50W NPN 2SC3688 1500V 10A 150W NPN 2SC3687 1500V 8A 150W NPN 2SC3686 1500V 7A 120W NPN 2SC3685 1500V 6A 120W NPN 2SC3486 1500V 6A 120W NPN 2SC3485 1500V 5A 120W NPN 2SC3484 1500V 3.5A 80W NPN 2SC3482 1500V 6A 120W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SC3481 1500V 5A 120W NPN 2SC3480 1500V 3.5A 80W NPN 2SC2125 2200V 5A 50W NPN 2SC2027 1500V 5A 50W NPN BUY71 2200V 2A 40W NPN BU508A 1500V 7.5A 75W NPN BU500 1500V 6A 75W NPN BU308 1500V 5A 12.5W NPN BU209A 1700V 5A 12.5W NPN BU208D 1500V 5A 12.5W NPN BU208A 1500V 5A 12.5W NPN BU108 1500V 5A 12.5W NPN 2SD1585 60V 3A 15WNPN 2SD773 20V 2A 1W NPN 2SC2785 60V 0.1A 0.3W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SC403 50V 0.1A 0.1W NPN 2SD1246 30V 2A 0.75W NPN 2SC2570A 25V 0.07A 0.6W NPN 2SC1047 30V 0.015A 0.15W NPN 2SC3114 60V 0.15A 0.2W NPN 2SD400 25V 1A 0.75W NPN 2SC1923 40V 0.02A 0.1W NPN 2SC2621 300V 0.2A 10W NPN 2SC2568 300V 0.2A 10W NPN 2SC2216 50V 0.05A 0.3W NPN 2SC1674 30V 0.02A 0.1W NPN 2SC536F 40V 0.1A 0.25W NPN 2SA608F 30V 0.1A 0.25W PNP 2SD1271A 130V 7A 40W NPN 2SD1133 70V 4A 40W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC1890A 120V 0.05A 0.3W NPN 2SC1360 50V 0.05A 0.5W NPN 2SA1304 150V 1.5A 25W PNP 2SD1274A 150V 5A 40W NPN 2SC2371 300V 0.1A 10W NPN 2SA966Y 30V 1.5A 0.9W PNP 2SD1378 80V 0.7A 10W NPN 2SD553Y 70V 7A 40W NPN RN1204 50V 0.1A 0.3W NPN 2SD1405Y 50V 3A 30W NPN 2SC2878 50V 0.3A 0.4W NPN 2SC1959 30V 0.4A 0.5W NPN 2SC1569 300V 0.15A 1.5W NPN 2SC2383Y 160V 1A 0.9W NPN 2SA1299 50V 0.5A 0.3W PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SB564A 45V 0.05 0.25W PNP 2SD1877 800V 4A 50W NPN BU508A 1500V 8A 125W NPN BUT11 1500V 5A 80W NPN 2SD3505 900V 6A 50W NPN 2SD906 1400V 8A 50W NPN 2SD905 1400V 8A 50W NPN 2SC1942 1500V 3A 100W NPN 2SD1397 1500V 3.5A 50W NPN 2SD1396 1500V 2.5A 50W NPN 2SC3153 900V 6A 100W NPN 2SD1403 1500V 6A 50W NPN 2SD1410 1500V 3.5A 80W NPN 2SD2057 1500V 5A 100W NPN 2SD20271500V 5A 50W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SD953 1500V 7A 95W NPN 2SD951 1500V 3A 65W NPN 2SD950 1500V 3.5A 80W NPN 2SD852 1500V 5A 70W NPN 2SD850 1500V 3A 25W NPN 2SD900B 1500V 5A 50W NPN 2SD899A 1500V 4A 50W NPN 2SD898B 1500V 3A 50W NPN 2SD871 1500V 6A 50W NPN 2SD870 1500V 5A 50W NPN 2SD869 1500V 3.5A 50W NPN 2SD1433 1500V 7A 80W NPN 2SD1432 1500V 6A 80W NPN 2SD1431 1500V 5A 80W NPN 2SD820 1500V 5A 50W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SD819 1500V 3.5A 50W NPN 2SD1497 1500V 6A 50W NPN 2SD1398 1500V 5A 50W NPN 2SD1427 1500V 5A 80W NPN 2SD1428 1500V 6A 80W NPN 2SD1426 1500V 3.5A 80W NPN 2SC2068 70V 0.2A 0.62W NPN 2SC1627Y 80V 0.3A 0.6W NPN 2SC495Y 70V 0.8A 5W NPN 2SC388A 20V 0.02A 0.2W NPN 2SB686 100V 6A 60W PNP 2SA940 150V 1.5A 1.5W PNP 2SC2120Y 30V 0.8A 0.6W NPN 2SD1555 1500V 5A 50W NPN 2SD8806 60V 3A 30W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SC2456 300V 0.1A 10W NPN 2SA1300 20V 2A 0.7W PNP 2SC304CD 60V 0.5A 0.8W NPN 2SC2238 160V 1.5A 25W NPN 2SC3328 80V 2A 0.9W NPN 2SC2190 450V 5A 100W NPN 2SA968Y 160V 1.5A 25W PNP 2SC3402 50V 0.1A 0.3W NPN 2SC2168 200V 2A 30W NPN 2SC3198G 60V 0.15A 0.4W NPN 2SC2655Y 60V 2A 0.9W NPN 2SC1827 80V 4A 30W NPN 2SA1266Y 50V 0.15A 0.4W PNP 2SD880 60V 3A 30W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SC945 50V 0.1A 0.25W NPN 2SC3279 30V 2A 0.75W NPN 2SC2229 200V 0.05A 0.8W NPN 2SC2236 30V 1.5A 0.9W NPN 2SC383 20V 0.05A 0.2W NPN 2SA950Y 150V 0.8A 0.6W PNP BC548B 30V 0.2A 0.5W NPN 2SC3399 50V 0.1A 0.3W NPN 2SD1455 1500V 5A 50W NPN 2SC1983R 80V 3A 30W NPN 2SC227 300V 0.1A 0.75W NPN 2SC1213D 50V 0.5A 0.4W NPN 2SA778AK 180V 0.05A 0.2W PNP DTC114ES 50V 0.1A 0.25W NPN 2SC3413C 40V 0.1A 0.5W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SC2611 300V 0.1A 1.25W NPN 2SC1514 300V 0.1A 1.25W NPN DTC124ES 50V 0.1A 0.25W PNP 2SD1078 50V 2A 20W NPN 2SA1390 35V 0.5A 0.3W PNP 2SD788 20V 2A 0.9W NPN 2SD882 40V 3A 10W NPN 2SD787 20V 2A 0.9W NPN 2SD401AK 200V 2A 25W NPN 2SC2610 300V 0.1A 0.8W NPN 2SC2271N 300V 0.1A 0.75W NPN 2SC1740 50V 0.3A 0.3W NPN 2SC1214C 50V 0.5A 0.6W NPN 2SC458D 30V 0.1A 0.2W NPN 2SA673 50V 0.5A 0.4W PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SD1556 1500V 6A 50W NPN 2SD1499 100V 5A 40W NPN 2SD1264A 200V 2A 30W NPN 2SD1010 50V 0.05A 0.3W NPN 2SD966 60V 5A 1W NPN 2SD601AR 60V 0.1A 0.2W NPN 2SC3265Y 30V 0.8A 0.2W NPN 2SC3063 300V 0.1A 1.2W NPN 2SC2594 40V 5A 10W NPN 2SC1317-R 30V 0.5A 0.4W NPN 2SB1013A 30V 0.5A 0.3W PNP 2SD1226 60V 3A 35W NPN 2SC2636Y 30V 0.05A 0.4W NPN 2SB940 200V 2A 30W PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SD1391 1500V 5A 80W NPN 2SC2188 45V 0.05A 0.6W NPN 2SK301-R 0.14A 0.25W N沟场效应管 2SD1266 60V 3A 35W NPN 2SD1175 1500V 5A 100W NPN 2SD973 30V 1A 1W NPN 2SC2923 300V 0.2A 15W NPN 2SC2653H 250V 0.2A 15W NPN 2SC2377C 30V 0.15A 0.2W NPN 2SC1685Q 30V 0.1A 0.25W NPN 2SC1573A 250V 0.07A 0.6W NPN 2SB642-R 60V 0.2A 0.4W PNP 2SA1309A 25V 0.1A 0.3W PNP 2SA1018 150V 0.07A 0.75W PNP 2SA564A 25V 0.1A 0.25W PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SK301-Q 0.14A 0.25W N沟场效应管 2SD1541 1500V 3A 50W NPN 2SC1685 30V 0.1A 0.25W NPN 2SC1573A 250V 0.07A 0.6W NPN 2SA1309A 25V 0.1A 0.3W PNP UN4213 50V 0.1A 0.25W NPN UN4211 50V 0.1A 0.25W NPN UN4212 50V 0.1A 0.25W NPN UN4111 50V 0.1A 0.25W PNP 2SD1541 1500V 3A 50W NPN 2SD965 40V 5A 0.75W NPN 2SC2839 30V 0.1A 0.1W NPN 2SC2258 250V 0.1A 1W NPN 2SC1846 45V 1A 1.2W NPN 2SC1573A 250V 0.07A 0.6W NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型 2SA1309A 25V 0.1A 0.3W PNP 2SD1544 1500V 3.5A 40W NPN 2SD802 900V 6A 50W NPN 2SC2717 35V 0.8A 7.5W NPN 2SC2482 150V 0.1A 0.9W NPN 2SC2073 150V 1.5A 25W NPN 2SC1815Y 60V 0.15A 0.4W NPN 2SB774T 30V 0.01A 0.25W PNP 2SA1015R 50V 0.15A 0.4W PNP 2SA904 90V 0.05A 0.2W PNP 2SA562T 30V 0.4A 0.3W PNP。

RF中文数据手册要点

IRF540 N沟道MOS管特性‘Thrench’工艺低的导通内阻快速开关低热敏电阻综述使用沟渠工艺封装的N通道增强型场效应功率晶体管应用：DC到DC转换器开关电源电视及电脑显示器电源IRF540中提供的是SOT78(TO220AB)常规铅的包裹。

IRF540S中提供的是SOT404(D PAK)表面安装的包裹。

管脚管脚描述1Gate2Drain3SourceTab Drain极限值系统绝对最大值依照限制值符号参数条件最小值最大值单位V_DSSV_DGRV_GSI_DI_DMP_DTj，Tsig 漏源极电压漏门极电压门源极电压连续漏电流脉冲漏电流总功耗操作点和存储温度Tj= 25 ?C to 175?CTj = 25 ?C to 175?C;RGS = 20 k?Tmb = 25 ?C; VGS = 10 VTmb = 100 ?C; VGS = 10 VTmb = 25 ?CTmb = 25 ?C--------55100100±20231692100175VVVAAAW℃雪崩能量极限值符号参数条件最小值最大值单位非重复性雪崩能量最大非重复性雪崩电流Unclamped inductive load, IAS = 10 A;tp = 350 μs; Tj prior to avalanche =25?C;VDD ≤ 25 V; RGS = 50 ?; VGS = 10 V; referto fig:14--23023mJA热敏电阻符号参数条件最小值典型值最大值单位安装底座交界SOT78封装，自由空间--K/W电特性25℃除非另有说明反向二极管极限值及特性底座温度-自然功率降低百分比图1：自然功率损耗底座温度-漏电流降低百分比图2 ：自然持续漏电流漏源极电压-脉冲漏极电流峰值图3 ：安全操作区域脉宽-瞬态热阻抗图4：瞬态热阻抗漏源极电压-漏极电流图5：典型输出特性漏极电流-漏源极导通阻抗图6：典型导通阻抗图7：典型传递特性图8：典型跨导图9：漏源极导通阻抗图10：门阀电压图11：阈漏极电流图12：典型电容值图13：典型的反向二极管电流图14：最大允许非重复性雪崩电流(IAS)和雪崩的时间。

IRFBC30中文资料

IRFBC30N -CHANNEL 600V -1.8Ω-3.6A -TO-220PowerMESH ™ΙΙ MOSFETs TYPICAL R DS(on)=1.8Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTEDs VERY LOW INTRINSIC CAPACITANCES sGATE CHARGE MINIMIZEDDESCRIPTIONThe PowerMESH ™ΙΙis the evolution of the first generation of MESH OVERLAY ™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed,gate charge and ruggedness.APPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER®INTERNAL SCHEMATIC DIAGRAMJanuary 2000ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)600V V DGR Drain-gate Voltage (R GS =20k Ω)600V V GS Gate-source Voltage±20V I D Drain Current (continuous)at T c =25o C 3.6A I D Drain Current (continuous)at T c =100o C 2.3A I DM (•)Drain Current (pulsed)14A P tot Total Dissipation at T c =25o C 75W Derating Factor0.6W/o C dv/dt(1)Peak Diode Recovery voltage slope 3V/nsT s tg Storage Temperature-65to 150o C T jMax.Operating Junction Temperature150oC(•)Pulse width limited by safe operating area(1)I SD ≤3.6A,di/dt ≤60A/µs,V DD ≤V (BR)DSS ,Tj ≤T JMAXTYPE V DSS R DS(on)I D IRFBC30600V<2.2Ω3.6A123TO-2201/8THERMAL DATAR thj-case Rthj-amb R thc-sinkT l Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose1.762.50.5300o C/WoC/Wo C/Wo CAVALANCHE CHARACTERISTICSSymbol Parameter Max Value UnitI AR Avalanche Current,Repetitive or Not-Repetitive(pulse width limited by T j max)3.6AE AS Single Pulse Avalanche Energy(starting T j=25o C,I D=I AR,V DD=50V)300mJELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V GS=0600VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating T c=125o C150µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate ThresholdVoltageV DS=V GS I D=250µA234VR DS(on)Static Drain-source OnResistanceV GS=10V I D=2.2A 1.8 2.2ΩI D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma xV GS=10V3.6A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg f s(∗)ForwardTransconductanceV DS>I D(o n)x R DS(on)ma x I D=2.2A 2.5SC iss C os s C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=04757210pFpFpFIRFBC30 2/8ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on TimeRise TimeV DD=250V I D=2.5AR G=4.7 ΩV GS=10V(see test circuit,figure3)1414nsnsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=480V I D=3.6A V GS=10V16.52.5923.1nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt r(Voff) t f t c Off-voltage Rise TimeFall TimeCross-over TimeV DD=480V I D=3.6AR G=4.7 ΩV GS=10V(see test circuit,figure5)151924nsnsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM(•)Source-drain CurrentSource-drain Current(pulsed)3.614AAV SD(∗)Forward On Voltage I SD=3.6A V GS=0 1.6Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=5A di/dt=100A/µsV DD=100V T j=150o C(see test circuit,figure5)6002.89nsµCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area Thermal ImpedanceIRFBC303/8Output Characteristics TransconductanceGate Charge vs Gate-source Voltage Transfer CharacteristicsStatic Drain-source On Resistance Capacitance VariationsIRFBC30 4/8Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureIRFBC305/8Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.1:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesIRFBC306/8DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.402.720.0940.107D1 1.270.050E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.010.400.3930.409L216.40.645L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.3.75 3.850.1470.151L6ACDED 1FGL7L2Dia.F 1L5L4H 2L9F 2G 1TO-220MECHANICAL DATAP011CIRFBC307/8Information furnished is believed to be accurate and reliable.However,STMicroelect r onics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all informat i on previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©1999STMicroelectronics –Printed in Italy –All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japa n -Malaysia -Malta -Morocco -Singapore -Spain -Sweden -Switzerland -United Kingdom -U.S.A..IRFBC308/8。

常用近500个三极管(MOSFET)中文资料

9011,9012,9013,9014,8050,8550三极管的区别9011 NPN 30V 30mA 400mW 150MHz 放大倍数20-809012 PNP 50V 500mA 600mW 低频管放大倍数30-909013 NPN 20V 625mA 500mW 低频管放大倍数40-1109014 NPN 45V 100mA 450mW 150MHz 放大倍数20-908050 NPN 25V 700mA 200mW 150MHz 放大倍数30-1008550 PNP 40V 1500mA 1000mW 200MHz 放大倍数40-140详情如下：90系列三极管参数90系列三极管大多是以90字为开头的，但也有以ST90、C或A90、S90、SS90、UTC90开头的，它们的特性及管脚排列都是一样的。

9011 结构：NPN集电极-发射极电压30V集电极-基电压50V射极-基极电压5V集电极电流0.03A耗散功率0.4W结温150℃特怔频率平均370MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989012 结构：PNP集电极-发射极电压-30V集电极-基电压-40V射极-基极电压-5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009013 结构：NPN集电极-发射极电压25V集电极-基电压45V射极-基极电压5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009014 结构：NPN集电极-发射极电压45V集电极-基电压50V射极-基极电压5V集电极电流0.1A耗散功率0.4W结温150℃特怔频率最小150MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009015 结构：PNP集电极-发射极电压-45V集电极-基电压-50V射极-基极电压-5V集电极电流0.1A耗散功率0.45W结温150℃特怔频率平均300MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009016 结构：NPN集电极-发射极电压20V集电极-基电压30V射极-基极电压5V集电极电流0.025A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989018 结构：NPN集电极-发射极电压15V集电极-基电压30V射极-基极电压5V集电极电流0.05A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198三极管85508550是一种常用的普通三极管。

20CTQSPBF资料

Document Number: 94163For technical questions, contact: diodes-tech@Schottky Rectifier, 2 x 10 A20CTQ...SPbF/20CTQ...-1PbFVishay High Power ProductsFEATURES•175 °C T J operation •Center tap TO-220 package •Low forward voltage drop •High frequency operation•H igh purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance •Guard ring for enhanced ruggedness and long term reliability •Lead (Pb)-free (“PbF” suffix)•Designed and qualified for Q101 levelDESCRIPTIONThe 20CTQ.. center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes,and reverse battery protection.PRODUCT SUMMARYI F(AV) 2 x 10 A V R35 to 45 VB as e common c a thode2MAJOR RATINGS AND CHARACTERISTICSSYMBOL CHARACTERISTICS VALUESUNITS I F(AV)Rectangular waveform20A V RRM Range 35 to 45V I FSM t p = 5 µs sine1060A V F 10 Apk, T J = 125 °C (per leg)0.57V T JRange- 55 to 175°CVOLTAGE RATINGSPARAMETER SYMBOL 20CTQ035SPbF 20CTQ035-1PbF20CTQ040SPbF 20CTQ040-1PbF20CTQ045SPbF 20CTQ045-1PbFUNITS Maximum DC reverse voltageV R 354045VMaximum working peak reverse voltageV RWMABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL TEST CONDITIONSVALUES UNITSMaximum average forward current See fig. 5I F(AV)50 % duty cycle at T C = 145 °C, rectangular waveform 20A Maximum peak one cycle non-repetitive surge current per leg See fig. 7I FSM 5 µs sine or 3 µs rect. pulseFollowing any rated loadcondition and with rated V RRM applied106010 ms sine or 6 ms rect. pulse265Non-repetitive avalanche energy per leg E AS T J = 25 °C, I AS = 2.0 A, L = 6.5 mH13mJ Repetitive avalanche current per legI ARCurrent decaying linearly to zero in 1 µsFrequency limited by T J maximum V A = 1.5 x V R typical2.0A * Pb containing terminations are not RoHS compliant, exemptions may apply 元器件交易网For technical questions, contact: diodes-tech@Document Number: 9416320CTQ...SPbF/20CTQ...-1PbFVishay High Power Products Schottky Rectifier, 2 x 10 ANote(1)Pulse width < 300 µs, duty cycle < 2 %ELECTRICAL SPECIFICATIONSPARAMETER SYMBOLTEST CONDITIONSV ALUES UNITS Maximum forward voltage drop per leg See fig. 1V FM (1)10 AT J = 25 °C 0.64V20 A 0.7610 A T J = 125 °C 0.5720 A0.68Maximum reverse leakage current per leg See fig. 2I RM (1)T J = 25 °C V R = Rated V R2mA T J = 125 °C15Maximum junction capacitance per leg C T V R = 5 V DC (test signal range 100 kHz to 1 MHz) 25 °C 900pF Typical series inductance per leg L S Measured lead to lead 5 mm from package body 8.0nH Maximum voltage rate of change dV/dtRated V R10 000V/µs THERMAL - MECHANICAL SPECIFICATIONSPARAMETER SYMBOL TEST CONDITIONSVALUES UNITS Maximum junction and storagetemperature rangeT J , T Stg- 55 to 175°CMaximum thermal resistance, junction to case per leg R thJCDC operation See fig. 4 3.25°C/W Maximum thermal resistance, junction to case per package DC operation1.63Typical thermal resistance,case to heatsink R thCSMounting surface, smooth and greased0.50Approximate weight 2g 0.07oz.Mounting torque minimum 6 (5)kgf ⋅ cm (lbf ⋅ in)maximum12 (10)Marking deviceCase style D 2PAK 20CTQ045S Case style TO-26220CTQ045-1元器件交易网Document Number: 94163For technical questions, contact: diodes-tech@20CTQ...SPbF/20CTQ...-1PbFSchottky Rectifier, 2 x 10 A Vishay High Power ProductsFig. 1 - Maximum Forward Voltage Drop Characteristics(Per Leg)Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage (Per Leg)Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics (Per Leg)元器件交易网 For technical questions, contact: diodes-tech@Document Number: 9416320CTQ...SPbF/20CTQ...-1PbFVishay High Power Products Schottky Rectifier, 2 x 10 AFig. 5 - Maximum Allowable Case Temperature vs.Average Forward Current (Per Leg)Fig. 6 - Forward Power Loss Characteristics (Per Leg)Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)Fig. 8 - Unclamped Inductive Test Circuit元器件交易网元器件交易网Schottky Rectifier, 2 x 10 A Vishay High Power ProductsORDERING INFORMATION TABLELINKS TO RELATED DOCUMENTSDimensions /doc?95014Part marking information /doc?95008Packaging information /doc?95032Document Number: 94163For technical questions, contact: diodes-tech@ Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。

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元器件交易网
IRFBC20S/LPbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
14.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
元器件交易网
PD - 95543
IRFBC20S/LPbF
•
Lead-Free

1
7/21/04
元器件交易网
IRFBC20S/LPbF
2

元器件交易网
IRFBC20S/LPbF
D AT E COD E Y E AR 7 = 1 99 7 W E E K 19 L IN E C
OR
IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R D AT E COD E P = D E S IGN AT E S L E AD -F R E E P R OD U CT (OP T ION AL ) Y E AR 7 = 19 97 WE E K 19 A = AS S E MB L Y S IT E COD E
8

元器件交易网
IRFBC20S/LPbF
TO-262 Package Outline
TO-262 Part Marking Information
E X AMP L E : T H IS IS AN IR L 31 03 L L OT COD E 17 89 AS S E MB L E D ON W W 1 9, 19 97 IN T H E AS S E MB L Y L IN E "C" N ote: "P " in as s em bly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R
元器件交易网
IRFBC20S/LPbF

7
元器件交易网
IRFBC20S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 8 0 24 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly line pos ition in dicates "L ead-F ree" IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L O T CO D E P AR T N U M B E R F 530S D AT E C O D E Y E AR 0 = 2 0 0 0 WE E K 02 L IN E L

3
元器件交易网
IRFBC20S/LPbF
4

元器件交易网
IRFBC20S/LPbF

5
元器件交易网
IRFBC20S/LPbF
6

OR
IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD - F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 WE E K 02 A = AS S E M B L Y S IT E C O D E
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at for sales contact information.07/04 10