12N06

技θJA
θJC
100
°C/W
5
°C/W
科
安
达
众
市
圳
深
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Page 2

12N06
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TCASE=25°C, unless otherwise specified)
VGS(TH) VDS=VGS, ID=250µA
1
3V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=6A VGS=5V, ID=6A
0.08 0.10 Ω 0.10 0.12 Ω
DYNAMIC PARAMETERS Input Capacitance Output Capacitance
安VSD
IS=12A, VGS=0V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
达 Body Diode Reverse Recovery Current
tRR QRR IRRM
IS=12A, VDD=16V, di/dt=100A/µs TJ=150°C (Figure 3.)
1
TO-252
on-state resistance with extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps .
FEATURES
* VDS(V)= 60V
Page 3

12N06
Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
司
公
A
AA
D
G
D. U. T
FAST DIODE
L=100µH
S B
25Ω
B B
D
RG
G
D. U. T
VDD 1000µF 3.3µF
限
VDD
CRSS
QG QGS QGD tD(ON) tR
公 限 VGS=5V, VDD=48V, ID=12A 有 VDD=30V, ID=6A, RG=4.7Ω,
30
pF
7.5 10 nC
2.5
nC
3.0
nC
10
ns
35
ns
Turn-OFF Delay Time Fall-Time
tD(OFF) tF
技VGS=4.5V (Figure 1.)
UNISONIC TECHNOLOGIES CO., LTD
12N06
Preliminary
12 Amps, 60 Volts N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC UT12N06 is an N-channel mode Power MOSFET using UTC’s advanced technology to provide customers with minimum
VDS=Max rating, VGS=0V
1 µA
Gate- Source Leakage Current Forward Reverse
IGSS
VGS=+20V, VDS=0V VGS=-20V, VDS=0V
+100 nA -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
众
市
圳
深
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ቤተ መጻሕፍቲ ባይዱ
Page 4

12N06
Preliminary
Power MOSFET
深圳市众达安科技有限公司
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
司 公
* ID =12A * RDS(on) < 0.10Ω @VGS = 10 V * RDS(on) < 0.12Ω @VGS = 5.0 V * High switching speed * Low gate charge
限 有
SYMBOL
2.Drain
技 科
1.Gate
安
达 众 3.Source
ORDERING INFORMATION
市Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment
1
2
3
Packing
圳 12N06L-TN3-R
12N06G-TN3-R
TO-252
G
D
S Tape Reel
深
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有L
3.3µF
技 VD ID
2200µF
+
S
-
科 VI PW
D. U. T
安 Figure 3. Test Circuit for Inductive Load Switching and Diode Recovery Times 达
Figure 4. Unclamped Inductive Load Test Circuit
CISS COSS
VGS=0V, VDS=25V, f=1.0MHz
司350 75
pF pF
Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 1,2) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time
科 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
PD
30
W
Derating Factor
0.2
W/°C
Peak Diode Recovery dv/dt (Note 3)
dv/dt
15
V/ns
Avalanche Energy (Note 4)
EAS
100
mJ
Junction Temperature Storage Temperature
TJ TSTG
Page 5
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VDSS
60
V
Drain-Gate Voltage (RGS=20KΩ))
VDGR
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous TC = 25°C TC = 100°C
ID
12
A
8.5
A
Pulsed (Note 2)
IDM
48
A
Power Dissipation
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=25mA, VGS=0V
60
V
Drain-Source Leakage Current
IDSS
Notes: 1. Pulsed: pulse duration=300µs, duty cycle 1.5%
众 2. Essentially independent of operating temperature
20
ns
13
ns
12 A 48 A
1.5 V
50
ns
65
µC
2.5
A
市
圳
深
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
司+150
-55~+150
°C °C
公 Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area
3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDS ≤ 40V, TJ ≤ TJMAX 4. Starting TJ = 25°C, ID = 6A, VDD = 30V
限
THERMAL CHARACTERISTICS
PARAMETER
有 SYMBOL
RATINGS
UNIT
Junction to Ambient Junction to Case
Page 1

12N06
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)