MQF70.0-0660-06中文资料
CE标志、ENIEC标准对应产品(机种一览)
指令 LVD
标志 CE 标志
（交替型）
AON1 AON2 AON2G、AON2F AON3
（按旋转锁定型） （钥匙型） （摇杆型） （推拉开关） （方形双按钮式） （销锁定形）
双按钮交替型
指示灯 （LED 灯泡照明、 白炽灯泡照明）
AJN3 ABN5 ATN4 ATN23 UWQN1 ABN8P
UWQN2 ABBN11 APN1、APNE1 UPQN3B UPQN4、UPQNE4
DC-13：1.1A、125V DC
〈照明元器件额定值〉 （LED 灯泡照明） 全电压型： 6、12、24V AC/DC 变压器型： 100V 〜 480V AC （白炽灯泡照明） 全电压型： 6、12、24V AC/DC 变压器型： 100V 〜 480V AC
（按压检测指示灯） 照明按钮开关 （LED 灯泡照明）
开关／指示灯
照明元器件／ 组合式指示灯
组合式 数字显示器
继电器／插座
定时器
端子台
电源
安全设备
电路保护器
PLC／智能型 应用控制器
人机界面
传感器
通用型 电气控制箱
备注 对应 JIS 和 IEC JIS C8201-1 JIS C8201-5-1 IEC 60947-1 IEC 60947-5-1
防爆设备 各种资料
（白炽灯泡照明）
选择开关
选择按钮开关
ø30HN 系列
照明选择开关 （LED 灯泡照明、 白炽灯泡照明）
按锁旋转复位型 （触点块一体型）
APNI∗P
ALN2、ALNE2 AOLN2、AOLNE2 ALGN2、ALGNE2 AOLGN2 AOLGNE2 AJLN3 ALN3、ALNE3 AOLN3、AOLNE3 ALN、ALNE AOLN、AOLNE3 ALN∗G、ALNE3G ALN∗F、ALNE3F AOLN∗F、 AOLNE3F AJLN ALN3、ALNE3 AOLN3、AOLNE3 ULQN、UOLQN ULQN∗B、 UOLQN∗B ALN∗L ASN、ASN∗L ASN∗K ASTN、ASTN∗L ASTN∗K ABN ABN∗L ASLN
70N06中文资料
UNISONIC TECHNOLOGIES CO., LTD70N06MOSFET70 Amps,60 VoltsN-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.FEATURES* R DS(ON) = 15m Ω@V GS = 10 V* Ultra low gate charge ( typical 90 nC )* Low reverse transfer Capacitance ( C RSS = typical 80 pF ) * Fast switching capability* 100% avalanche energy specified * Improved dv/dt capabilitySYMBOL1.GateTO-22011TO-220F*Pb-free plating product number: 70N06LORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package 1 2 3 Packing70N06-TA3-T 70N06L-TA3-T TO-220 G D S Tube 70N06-TF3-T 70N06L-TF3-T TO-220F G D S TubeABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 VT C = 25 70 AContinuous Drain Current T C = 100 I D56 ADrain Current Pulsed (Note 1) I DM 280 A Single Pulsed Avalanche Energy (Note 2) E AS 600 mJ Repetitive Avalanche Energy (Note 1) E AR 20 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 10 V/nsTotal Power Dissipation (T C = 25 ) 200 WDerating Factor above 25P D1.4 W/ Operation Junction Temperature T J -55 ~ +150℃ Storage Temperature T STG -55 ~ +150℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL DATAPARAMETER SYMBOL MIN TYP MAX UNITThermal Resistance, Junction-to-Case θJC 1.2 °C/W Thermal Resistance, Case-to-Sink θCS 0.5 °C/W Thermal Resistance, Junction-to-Ambient θJA 62.5 °C/WELECTRICAL CHARACTERISTICS (T C =25℃, unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 µA 60 V Breakdown Voltage TemperatureCoefficientBV DSS /△T J I D = 1mA, Referenced to 25 0.08 V/V DS = 60 V, V GS = 0 V 1 µADrain-Source Leakage Current I DSS V DS = 60 V, V GS = 0 V,T J = 15010 µAGate-Source Leakage Current V GS = 20V, V DS = 0 V 100nAGate-Source Leakage Reverse I GSSV GS = -20V, V DS = 0 V -100nA On Characteristics Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250 µA 2.0 4.0V Static Drain-Source On-StateResistanceR DS(ON) V GS = 10 V, I D = 35 A 12 15 m ΩDynamic Characteristics Input Capacitance C ISS 3300 pFOutput Capacitance C OSS 530 pFReverse Transfer Capacitance C RSSV GS = 0 V, V DS = 25 Vf = 1MHz80 pF Switching Characteristics Turn-On Delay Time t D(ON) 12 nsRise Time t R 79 ns Turn-Off Delay Time t D(OFF) 80 nsFall Time t F V DD = 30V, I D =70 A, V GS =10V, (Note 4, 5) 52 ns Total Gate Charge Q G 90 140nCGate-Source Charge Q GS 20 35 nCGate-Drain Charge (Miller Charge) Q GD V DS = 60V, V GS = 10 VI D = 48A, (Note 4, 5)30 45 nCELECTRICAL CHARACTERISTICS(Cont.)2. L=19.5mH, I AS=70A, R G=20Ω, Starting T J=253. I SD≤48A, di/dt≤300A/µs, V DD≤BV DSS, Starting T J=254. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%5. Essentially independent of operating temperature.TEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS10101010Drain-Source Voltage , V DS (V)D r a i n C u r r e n t ,I D (A )On-State CharacteristicsGate -Source Voltage , V GS (V)Transfer Characteristics110D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) (m Ω)Drain Current , I D (A)30708012131415On-Resistance Variation vs . DrainCurrent and Gate Voltage102101000.2Source-Drain Voltage , V SD (V)R e v e r s e D r a i n C u r r e n t , I S D (A )Reverse Drain Current vs . AllowableCase Temperature1.60.40.60.8 1.0 1.2 1.41050100204060905Drain-Source Voltage , V DC (V)C a p a c i t a n c e (p F )Capacitance Characteristics100010G a t e -t o -S o u r c e V o l t a g e , V G S (V )Total Gate Charge, Q G (nC)81012Gate Charge Characteristics6402515203035TYPICAL CHARACTERISTICS-100D r a i n -S o u r c e B r e a k d ow n V o l t a g e , B V D S S (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150Breakdown Voltage Variation vs . JunctionD r a i n -S o u r c eO n -R e s i s t a n c e , R D S (O N ), (N o r m a l i z e d )-5050100150On-Resistance Variation vs . 01.0Junction Temperature , T J (℃)0.1Drain -Source Voltage, V D (V)D r a i n C u r r e n t , I D ,(A )Maximum Safe Operating100Case Temperature, T C (℃)Maximum Drain Current vs . CaseTemperatureSquare Wave Pulse Duration , t 1 (sec)T h e r m a l R e s p o n s e , Z θJ C (t )11E-50.10.110Transient Thermal Response Curve1E-41E-30.01。
Q67060-S6098中文资料
VLoaddump
Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
All other pins
BTS 4141D
Page 3
2004-01-27
元器件交易网
BTS 4141D
Electrical Characteristics
Parameter
Symbol
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified Thermal Characteristics
Slew rate off 70 to 40% VOUT,
RL = 47 Ω, Vbb = 15 V
ton toff dV/dton -dV/dtoff
Values
Unit
min. typ. max.
-
- 60 K/W
-
-
3 K/W
mΩ
- 150 200
- 270 320
0.7 -
-A
µs - 50 100
- 75 150
V/µs
-
1
2
-
1
2
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 2Nominal load current is limited by the current limitation ( see page 5 )
2SK3567_06中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」
25
Qg (nC)
栅源电压
4
2006-11-08
芯片中文手册,看全文,戳
2SK3567
rth – tw
10
1 th (ch-c)
/R
Duty=0.5 0.2
th (t)
0.1
0.1
0.05
阻抗ř 0.02
归一化瞬态热
0.01 0.01
SINGLE PULSE
0.001
10μ
100μ
2SK3567
单位：mm
绝对最大额定值
(Ta = 25°C)
特点
符号
等级
单元
漏源电压
漏极 - 栅极电压（R
栅源电压
GS = 20 kΩ)
漏极电流
漏极功耗（TC
DC （注1）
脉冲（T = 1毫秒） （注1）
= 25°C)
单脉冲雪崩能量
（注2）
雪崩电流
重复雪崩能量（注3）
通道温度
存储温度范围
VDSS VDGR VGSS
10
100
VDS (V)
Vth - 锝
5
4
3
(V)
th 2
V
COMMON SOURCE
1 栅极阈值电压
VDS = 10 V ID = 1 mA
PULSE TEST
0
80
40
0
40
外壳温度
80 120 160
Tc (°C)
PD - 锝
50
40
(W) 30
D
P 20
漏极功耗 10
0
0
40
80
外壳温度
120
7MBP100TEA060资料
Short operating
Collector-Emitter voltage *1
Collector current
DC
Inverter
1ms
Duty=72.3% *2
Collector power dissipation One transistor *3
Collector current
DC
元器件交易网
7MBP100TEA060
Econo IPM series
600V / 100A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction temperature of the IGBTs
Symbol
Condition
Min.
Brake
Inverter
Collector current at off signal input Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input Collector-Emitter saturation voltage
Symbol Iccp ICCN Vin(th)
Input zener voltage
VZ
Alarm signal hold time
tALM
Current limit resistor
RALM
Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal
EG8026芯片数据手册说明书
版本变更记录版本号日期描述V1.0 2022年01月20日EG8026数据手册初稿。
目录目录 (3)1.特点 (5)2.描述 (6)3.应用领域 (6)4.引脚 (7)4.1QFN70封装引脚定义 (7)4.2LQFP80封装引脚定义 (8)4.3引脚描述 (9)5.结构框图 (12)6.典型应用电路 (13)6.1EG8026 QFN70封装应用原理图 (13)6.2EG8026 LQFP80封装应用原理图 (14)6.348V/2KW双向逆变器主板应用图 (15)6.4EG1615 DC/DC控制板原理图 (16)7.电气特性 (17)7.1极限参数 (17)7.2典型参数 (18)8.应用设计 (20)8.1双向逆变器的主拓扑结构 (20)8.2EG8026实现的传统型Boost无桥PFC结构 (21)8.3EG8026实现的DC/AC Inverter结构 (22)8.4PFC和DC/AC Inverter、UPS功能切换 (23)8.5PWM调制方式 (23)8.6输出电压反馈 (24)8.7输出电流反馈 (26)8.8温度反馈 (27)8.9直流母线电压反馈和硬件过压保护 (27)8.10死区时间 (28)8.11H桥的左、右桥臂互换控制 (29)9.保护功能 (30)9.1输出过载保护 (30)9.2输出过流保护 (30)9.3直流母线电压过压保护 (30)9.4PCB过温保护 (30)9.5功率管过温保护 (30)9.6短路保护 (30)9.7MOS管峰值电流保护 (31)10.测试模式 (32)11.通讯功能（UART） (33)11.1串口描述 (33)11.2APP功能 (33)屹晶微电子有限公司11.2.1APP消息发送 (33)11.2.2APP消息接收 (34)11.3CFG功能 (36)11.3.1CFG请求消息 (36)11.3.2CFG应答消息 (36)11.3.30x10服务-会话切换 (37)11.3.40x22服务-读DID (38)11.3.50x2E服务-写DID (38)11.3.60x21 服务-读CFG (39)11.3.70x2D 服务-写CFG (39)11.3.80x2F服务-IO控制 (40)12.封装尺寸 (41)12.1LQFP80 (41)12.2QFN70 (42)屹晶微电子有限公司EG8026芯片数据手册V1.01. 特点集成了DC/AC逆变器和PFC升压两大功能支持UPS功能作逆变器DC/AC时的功能：⏹采用电流模式、中心对齐PWM调制方式，能带感性和容性负载⏹SPWM载波频率20KHz，适合大功率MOS管和IGBT管的应用⏹集成了两路600V半桥高压MOS管驱动器，驱动能力为±2A⏹集成四路独立的MOS管峰值电流保护电路及内置四路200mV基准源的比较器供用户设定保护值⏹集成了四路高速运放及一路高速比较器，两路运放用于交流电流放大器，一路运放用于交流输出电压反馈，一路运放用于短路保护和一路比较器用于限流保护⏹输出电压和输出电流是每个PWM周期实时处理，能实现精确跟踪⏹引脚可配置功能：●H桥左、右桥臂互换控制●4种死区时间可选配置: 300nS、500nS、1uS、1.5uS●2种固定正弦波频率可选配置：50Hz、60Hz●软启动开启和关闭⏹逆变器保护功能：●直流母线电压过压保护●交流输出欠压保护●输出过载保护●输出过流保护●PCB过温保护和IGBT过温保护●输出短路保护⏹串口通讯可设置参数：●50Hz纯正弦波固定频率●60Hz纯正弦波固定频率●交流输出电压●温度保护值●额定功率保护值●额定电流保护值●故障复位⏹串口通讯可读参数：●交流输出电压●交流输出频率●交流输出功率●交流输出电流●直流母线电压●故障代码作PFC升压时的功能：⏹采用传统型Boost无桥PFC结构，平均电流控制算法⏹SPWM载波频率20KHz，适合大功率MOS管和IGBT管的应用⏹升压输出电压由恒功率大小进行自动调节，正常电压为400V，可调电压范围为330V到450V⏹外部可设的硬件输出过压保护⏹交流输入电压欠压保护⏹输出过载和过流保护⏹支持UART串口通讯，实现跟前级DC/DC EG1615芯片进行通讯，读取充电电压和电流等信息⏹PF值可达0.98以上2. 描述EG8026芯片是一款专用于双向逆变器（同一套电路可作逆变器功能，又可作电池充电器功能）中的DC/AC逆变和PFC升压的控制芯片，集成了两路600V半桥高压MOS驱动器，驱动器的输出电流能力为+/-2A，内置四路独立的逐周PWM关断保护，可有效防止在极端情况下过高的峰值电流而损坏MOS的情况，另外提供了两路SD，分别为SD1，和SD2，SD1是驱动器1 HO1和LO1的逐周关断引脚，SD2是驱动器2 HO2和LO2的逐周关断引脚，结合外部比较器和SD功能可实现过流或短路保护等功能。
F6系列中文使用说明书(all)
使用手册ATEQ F6th 系列F620 / F610 / F6701.04 版Reference: RF-28300D-UF6系列使用手册修订由于持续更新，本使用手册中包含的信息，本设备的功能和设计如有更改，将不另行通知。
前言/演示:定义、特点和测量原理(#673) 前面板和界面 (#676)安装/ 配件:气源 (#677)启动 (#678)配件 (#682)选配件 (#683)错误消息 (#684)以 CC/min显示结果 (#687)F610 电子连接器 (#692/1)F620 电子连接器(#692/2)F670 电子连接器(#692/7)气动连接器(#693)参数/ 特殊循环:特殊循环 (#623)服务特殊循环 (#631)程序选择 (#679)程序参数 (#680)测试循环管理 (#681)爆裂测试 (#698)程序功能:功能管理 (#601)名称 (#602)程序链接 (#603)单位 (#604)自动连接器 (#605)测试检查 (#606)ATR (#607)预充气模式和充气模式 (#608) 阀代码 & 24V辅助输出 (#609) 循环结束 (#610)迷你阀 (#611)复工界限 (#612)密封零件 (#613)N 测试 (#614)参考容积 (#615)标记 (#617)温度校正 1 (#618)峰值保持 (#620) 正负号 (#621)过滤 (#622)流量水平 (#624)非负 (#625)绝对值 (#626)显示模式 (#627) 不排气(#630)蜂鸣器 (#639)外部排气 (#655)ATF (#685)隔断 (#686)By pass (#691)配置菜单:日期 / 时间 (#635)语言 (#642)电子调压阀 (#645)调压阀控制 (#646)稳定调压阀 (#647)压力传感器自动归零 (#648)自动短归零 (#649)排气水平 (#651)RS232 (#652)安全性 (#653)I/O 配置 (#654)IN7 测试 (#656)智能键 (#688)压力单位 (#695)USB (#696)结果菜单 / USB 菜单:储存 (#638)阀服务 (#658)I/O服务 (#661)系统信息 (#665)重置参数 (#669)结果菜单 (#689)服务 / USB (#690)CAN 状态 (#697)# 601: 功能管理# 602: 名称# 603: 程序链接# 604: 单位# 605: 自动连接器# 606: 测试检查# 607: ATR# 608: 预充气模式和充气模式# 609: 阀代码 & 24V 辅助输出# 610: 循环结束# 611: 迷你阀# 612: 复工界限# 613: 密封零件# 614: N 测试# 615: 参考容积# 617: 标记# 618: 温度校准 1# 620: 峰值保持# 621: 符号取反# 622: 过滤# 623: 特殊循环# 624: 流量水平# 625: 非负# 626: 绝对值# 627: 显示模式# 631: 服务特殊循环# 635: 日期 / 时间# 638: 储存# 639 : 蜂鸣器# 642: 语言# 645: 电子调压阀# 646: 调压阀控制# 647: 稳定调压阀# 648: 压力传感器自动归零# 649: 自动短归零# 651: 排气水平# 652: RS232# 653: 安全性# 654: I/O 配置# 655 : 外部排气# 656: IN7 测试# 658: 阀服务# 661: I/O 服务# 665: 系统信息# 669: 重置参数# 673: 定义，特性和测试原理# 676: 前面板和界面# 677: 气源# 678: 启动# 679: 程序选择# 680: 程序参数 (Leak)# 681: 测试循环管理# 682: 配件# 683: 选配件# 684: 错误消息# 685: ATF# 686: 隔断# 687: 以CC/min显示结果# 688: 智能键# 689: 结果菜单# 690: 服务 / USB# 691: By pass# 692/1: F610电子连接器# 692/2: F620电子连接器# 692/7: F670 电子连接器# 693: 气动# 695: 压力单位# 696: USB# 697: CAN 状态# 698 : 爆裂测试功能管理扩展菜单功能能够进行个性化设置和添加个人选项到测试循环当中。
光学指纹模块用户手册
光学指纹模块用户手册第1章概述1.1 模块特色FM-70 系列光学指纹模块以高性能高速DSP 处理器为核心，结合具有公司自主知识产权的光学指纹传感器，在无需上位机参与管理的情况下，具有指纹录入、图像处理、指纹比对、搜索和模板储存等功能的智能型模块。
和同类指纹产品相比， FM-70 模块具有以下特色：◆自主知识产权，成像清晰光学指纹传感器、模块硬件所有技术，均由杭州指安自主开发，获得多项国家专利，光路设计优秀，◆反应灵敏，指纹适应性强指纹图像读取时，对干湿手指都有灵敏的反应和判断，获得最佳的成像质量，适用人群广泛。
也可定制自学习适应功能，根据使用者的习惯、气候等的变化自动调整参数，做到更好的匹配。
◆特定绿色LED 高亮光源，抗衰老性能优采用特定绿色高亮光源组件，超低光衰，使用寿命更长，性能更持久耐用。
◆符合指纹行业现行最高标准通过国家和公安部安全防范报警系统产品质量监督检验，符合GA701-2007《指纹防盗锁通用技术条件》标准，可提供检验报告，让您的产品更快捷更方便的通过相关标准检验。
◆二次开发应用简单无需具备指纹识别专业知识即可应用，用户根据FM-70 模块提供的丰富控制指令，可自行开发出功能强大的指纹识别应用系统。
◆灵活设置安全等级针对不同应用场合或环境，用户可自行设定1—5 级的不同安全等级。
◆应用范围广泛FM-70 模块应用广泛，只要涉及到授权、管理、开关等方面的功能，均可用FM-70 模块的指纹识别功能来代替IC 卡、密码、硬件开关等，适合从低端到高端的所有系统，比如：●指纹门锁、保险柜、枪盒、金融等安全领域；●门禁系统、工控机、POS 机、驾培、考勤等身份领域；●私人会所、管理软件、授权许可等管理领域；●●医保领取、养老领取、指纹支付等金融领域。
指安科技拥有完备的技术团队，所有员工均来自指纹行业的专业人才，可以对用户开发提供良好的技术支持和售前售中售后服务工作。
1.2 新特性◆绿色LED 背光FM-70 系列模块采用绿色LED 背光，视觉感受更柔和。
RFG70N06中文资料
3-52
元器件交易网
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves
500 ID, DRAIN CURRENT (A) TC = +25oC 2 1 ZθJC, NORMALIZED THERMAL RESPONSE 100 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 100 0.01 10-5 10-4 10-3 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-2 10-1 100 101 PDM
80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 25 50 75 100 150 IDM, PEAK CURRENT CAPABILITY (A)
1000
VGS = 10V 100
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101
100µs
1msபைடு நூலகம்
10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
10ms 100ms
VDSS MAX = 60V
DC
t, RECTANGULAR PULSE DURATION (s)
Formerly developmental type TA49007.
FQPF70N10中文资料
Features
• 35A, 100V, RDS(on) = 0.023Ω @VGS = 10 V • Low gate charge ( typical 85 nC) • Low Crss ( typical 150 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 70 A, RG = 25 Ω
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 250 µA
100 --
ID = 250 µA, Referenced to 25°C -- 0.1
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 2500 3300 pF
-- 720 940
pF
-- 150 200
50WQ06FN中文资料
SCHOTTKY RECTIFIER5.5 Amp50WQ06FNBulletin PD-20525 rev. E 03/03D-Pak (TO-252AA)50WQ06FNBulletin PD-20525 rev. E 03/032Part number50WQ06FNV RMax. DC Reverse Voltage (V)V RWM Max. Working Peak Reverse Voltage (V)Voltage RatingsV FMMax. Forward Voltage Drop 0.57V @ 5A * See Fig. 1(1)0.74V @ 10A 0.54V @ 5A 0.68V @ 10A I RMMax. Reverse Leakage Current 3mA T J = 25 °C * See Fig. 2(1)35mA T J = 125 °CV F(TO)Threshold Voltage 0.35VT J = T J max.r t Forward Slope Resistance 25.5m ΩC T Typical Junction Capacitance 360pF V R = 5V DC , (test signal range 100Khz to 1Mhz) 25 °C L STypical Series Inductance5.0nH Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change10000V/µs(Rated V R )T J = 25 °C T J = 125 °C V R = rated V RElectrical SpecificationsParameters50WQ...UnitsConditions(1) Pulse Width < 300µs, Duty Cycle < 2%T J Max. Junction Temperature Range(*)-40 to 150°C T stgMax. Storage Temperature Range-40 to 150°CR thJC Max. Thermal Resistance Junction3.0°C/W DC operation * See Fig. 4to Case wtApproximate Weight 0.3 (0.01)g (oz.)Case StyleD - PAKSimilar to TO-252AAThermal-Mechanical SpecificationsParameters50WQ...UnitsConditions60I F(AV)Max. Average Forward Current5.5A50% duty cycle @ T C = 132°C, rectangular wave form* See Fig. 5I FSM Max. Peak One Cycle Non-Repetitive 3205µs Sine or 3µs Rect. pulse Surge Current * See Fig. 710510ms Sine or 6ms Rect. pulseE AS Non-Repetitive Avalanche Energy 7mJ T J = 25 °C, I AS = 1.2 Amps, L = 10 mHI ARRepetitive Avalanche Current0.8ACurrent decaying linearly to zero in 1 µsecFrequency limited by T J max. V A = 1.5 x V R typicalAbsolute Maximum RatingsFollowing any rated load condition and with rated V RRM appliedA Parameters50WQ... UnitsConditions< thermal runaway condition for a diode on its own heatsink (*) dPtot1dTjRth( j-a)50WQ06FN3 50WQ06FNBulletin PD-20525 rev. E 03/03 450WQ06FN5 5K3A712A50WQ06FNBulletin PD-20525 rev. E 03/03 6IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7309Visit us at for sales contact information. 03/03。
5962-8670402PA资料
UC2842/3/4/5UC3842/3/4/5 Current Mode PWM ControllerFEATURES•Optimized For Off-line And DC To DC Converters•Low Start Up Current(<1mA)•Automatic Feed ForwardCompensation•Pulse-by-pulse Current Limiting •Enhanced Load ResponseCharacteristics•Under-voltage Lockout With Hysteresis•Double Pulse Suppression •High Current Totem PoleOutput•Internally Trimmed Bandgap Reference•500khz Operation•Low R O Error Amp DESCRIPTIONThe UC1842/3/4/5family of control ICs provides the necessary features to implement off-line or DC to DC fixed frequency current mode control schemes with a minimal external parts count.Internally implemented circuits include under-voltage lockout featuring start up current less than1mA,a precision reference trimmed for accuracy at the error amp input,logic to insure latched operation,a PWM comparator which also provides current limit control,and a totem pole output stage designed to source or sink high peak current.The output stage,suitable for driving N Channel MOSFETs,is low in the off state. Differences between members of this family are the under-voltage lockout thresholds and maximum duty cycle ranges.The UC1842and UC1844have UVLO thresholds of16V(on)and10V(off),ideally suited to off-line applications.The corresponding thresholds for the UC1843and UC1845are 8.4V and7.6V.The UC1842and UC1843can operate to duty cycles approaching100%.A range of zero to50%is obtained by the UC1844and UC1845by the addition of an internal toggle flip flop which blanks the output off every other clockcycle. BLOCK DIAGRAMUC3842/3/4/5 ABSOLUTE MAXIMUM RATINGS(Note1)Supply Voltage(Low Impedance Source) (30V)Supply Voltage(I CC<30mA).................Self LimitingOutput Current (1)Output Energy(Capacitive Load)....................5µJAnalog Inputs(Pins2,3)...................-0.3V to+6.3VError Amp Output Sink Current....................10mAPower Dissipation at T A≤25°C(DIL−8).................1WPower Dissipation at T A≤25°C(SOIC-14).........725mWStorage Temperature Range..............-65°C to+150°CJunction Temperature Range.............-55°C to+150°CLead Temperature(soldering,10seconds)...........300°CNote1:All voltages are with respect to Pin5.All currents are positive into the specified terminal.Consult Packaging Section of Databook for thermallimitations and considerations of packages.Package TA≤25°CPower RatingDerating FactorAbove TA≤25°CTA≤70°CPower RatingTA≤85°CPower RatingTA≤125°CPower RatingW700mW 5.5mW/°C452mW370mW150mW DISSIPATION RATING TABLEPARAMETERTEST CONDITIONSUC1842/3/4/5UC2842/3/4/5UC3842/3/4/5UNITSMINTYPMAXMINTYPMAXReference Section Output Voltage T J =25°C,I O =1mA 4.955.00 5.05 4.905.00 5.10V Line Regulation 12≤V IN ≤25V 620620mV Load Regulation 1≤I 0≤20mA 625625mV Temp.Stability (Note 2)(Note 7)0.20.40.20.4mV/°C Total Output Variation Line,Load,Temp.(Note 2)4.95.14.825.18V Output Noise Voltage 10Hz ≤f ≤10kHz,T J =25°C (Note2)5050µV Long Term Stability T A =125°C,1000Hrs.(Note 2)525525mV Output Short Circuit -30-100-180-30-100-180mAOscillator Section Initial Accuracy T J =25°C (Note 6)475257475257kHz Voltage Stability 12≤V CC ≤25V0.210.21%Temp.Stability T MIN ≤T A ≤T MAX (Note 2)55%Amplitude V PIN 4peak to peak (Note 2)1.71.7VError Amp Section Input Voltage V PIN 1=2.5V2.452.50 2.55 2.422.50 2.58V Input Bias Current -0.3-1-0.3-2µA A VOL2≤V O ≤4V 65906590dB Unity Gain Bandwidth (Note 2)T J =25°C 0.710.71MHz PSRR12≤V CC ≤25V60706070dB Output Sink Current V PIN 2=2.7V,V PIN 1=1.1V 2626mA Output Source Current V PIN 2=2.3V,V PIN 1=5V -0.5-0.8-0.5-0.8mA V OUT High V PIN 2=2.3V,R L =15k to ground 5656V V OUT LowV PIN 2=2.7V,R L =15k to Pin 80.71.10.71.1VCurrent Sense Section Gain(Notes 3and 4) 2.853 3.15 2.853 3.15V/V Maximum Input Signal V PIN 1=5V (Note 3)0.91 1.10.91 1.1V PSRR12≤V CC ≤25V (Note 3)(Note 2)7070dB Input Bias Current -2-10-2-10µA Delay to Output V PIN 3=0to 2V (Note 2)150300150300nsELECTRICAL CHARACTERISTICS:Unless otherwise stated,these specifications apply for -55°C ≤T A ≤125°C for theUC184X;-40°C ≤T A ≤85°C for the UC284X;0°C ≤T A ≤70°C for the 384X;V CC =15V (Note 5);R T =10k;C T =3.3nF,T A =T J.Note 2:These parameters,although guaranteed,are not 100%tested in production.Note 3:Parameter measured at trip point of latch with V PIN 2=0.Note 4:Gain defined asA VPIN VPIN VPIN V≤≤130308,.Note 5:Adjust V CC above the start threshold before setting at 15V.Note 6:Output frequency equals oscillator frequency for the UC1842and UC1843.Output frequency is one half oscillator frequency for the UC1844and UC1845.Note 7:Temperature stability,sometimes referred to as average temperature coefficient,is described by the equation:Temp Stability V max VREF min TJ max TJ min REF=−−()()()()V REF (max)and V REF (min)are the maximum and minimum reference voltages measured over the appropriate temperature range.Note that the extremes in voltage do not necessarily occur at the extremes in temperature.PARAMETERTEST CONDITIONUC1842/3/4/5UC2842/3/4/5UC3842/3/4/5UNITSMINTYPMAXMINTYPMAXOutput Section Output Low Level I SINK =20mA 0.10.40.10.4V I SINK =200mA 1.5 2.21.52.2V Output High Level I SOURCE =20mA 1313.51313.5V I SOURCE =200mA1213.51213.5V Rise Time T J =25°C,C L =1nF (Note 2)5015050150ns Fall TimeT J =25°C,C L =1nF (Note 2)5015050150nsUnder-voltage Lockout Section Start Threshold X842/415161714.51617.5V X843/57.88.49.07.88.49.0V Min.Operating Voltage After Turn On X842/4910118.51011.5V X843/57.07.68.27.07.68.2VPWM SectionMaximum Duty Cycle X842/395971009597100%X844/5464850474850%Minimum Duty Cycle 0%Total Standby Current Start-Up Current0.510.51mA Operating Supply CurrentV PIN 2=V PIN 3=0V11171117mA V CC Zener Voltage I CC =25mA 30343034VNote 3:Parameter measured at trip point of latch with V PIN 2=0.Note 4:Gain defined as:A VPIN VPIN VPIN V =≤≤∆∆130308;..Note 5:Adjust V CC above the start threshold before setting at 15V.Note 6:Output frequency equals oscillator frequency for the UC1842and UC1843.Output frequency is one half oscillator frequency for the UC1844and UC1845.ELECTRICAL CHARACTERISTICS:Unless otherwise stated,these specifications apply for −55°C ≤T A ≤125°C for the UC184X;−40°C ≤T A ≤85°C for the UC284X;0°C ≤T A ≤70°C for the 384X;V CC =15V (Note 5);R T =10k;C T =3.3nF,T A =T J.OUTPUT SATURATION CHARACTERISTICSERROR AMPLIFIER OPEN-LOOP FREQUENCY RESPONSESHUT DOWN TECHNIQUESUC3842/3/4/5 OFFLINE FLYBACKREGULATORPACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)5962-8670401PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670401VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670401VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670401XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC 5962-8670402PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670402VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670402VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670402XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC 5962-8670403PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670403VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670403VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670403XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC 5962-8670404PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670404VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670404VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670404XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1842J ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC1842J883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC1842JQMLV ACTIVE CDIP JG8None Call TI Call TIUC1842L883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1842W ACTIVE CFP W141None A42SNPB Level-NC-NC-NC UC1843J ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC1843J883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC1843JQMLV ACTIVE CDIP JG8None Call TI Call TI UC1843L ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1843L883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1843LQMLV ACTIVE LCCC FK20None Call TI Call TI UC1843W ACTIVE CFP W141None A42SNPB Level-NC-NC-NC UC1844J ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC1844J883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC1844JQMLV ACTIVE CDIP JG8None Call TI Call TI UC1844L ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1844L883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1844LQMLV ACTIVE LCCC FK20None Call TI Call TI UC1844W ACTIVE CFP W141None A42SNPB Level-NC-NC-NC UC1845J ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC1845J883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC1845JQMLV ACTIVE CDIP JG8None Call TI Call TI UC1845L ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1845L883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1845LQMLV ACTIVE LCCC FK20None Call TI Call TI UC1845W ACTIVE CFP W141None A42SNPB Level-NC-NC-NCOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)UC2842D ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2842D8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2842D8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2842DR ACTIVE SOIC D14None Call TI Call TIUC2842DTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2842DW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC2842DWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC2842J OBSOLETE CDIP JG8None Call TI Call TIUC2842N ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC2842P OBSOLETE PDIP P8None Call TI Call TIUC2843D ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2843D8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2843D8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2843DR OBSOLETE SOIC D14None Call TI Call TIUC2843DTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2843J OBSOLETE CDIP JG8None Call TI Call TIUC2843N ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC2844D ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2844D8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2844D8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2844DTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2844N ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC2845D ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2845D8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2845D8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2845DTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2845J OBSOLETE CDIP JG8None Call TI Call TIUC2845N ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC3842D ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3842D8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3842D8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3842DTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3842J ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC3842N ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC3842P OBSOLETE PDIP P8None Call TI Call TIUC3843D ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3843D8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3843D8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3843DTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3843J ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)UC3843N ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC3843P OBSOLETE PDIP P8None Call TI Call TIUC3843QTR OBSOLETE PLCC FN20None Call TI Call TIUC3844D ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3844D8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3844D8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3844DTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3844J ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC3844N ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC3844P OBSOLETE PDIP P8None Call TI Call TIUC3845D ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3845D8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3845D8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3845DTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3845J ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC3845N ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC3845P OBSOLETE PDIP P8None Call TI Call TI(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-May not be currently available-please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead(Pb-Free).Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green(RoHS&no Sb/Br):TI defines"Green"to mean"Pb-Free"and in addition,uses package materials that do not contain halogens, including bromine(Br)or antimony(Sb)above0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.元器件交易网元器件交易网IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. T o minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. 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MQ-7
MQ-7 一氧化碳气体检测用半导体气敏元件MQ-7气体传感器所使用的气敏材料是在清洁空气中电导率较低的二氧化锡(SnO 2)。
采用高低温循环检测方式低温（1.5V 加热）检测一氧化碳，传感器的电导率随空气中一氧化碳气体浓度增加而增大，高温（5.0V 加热）清洗低温时吸附的杂散气体。
使用简单的电路即可将电导率的变化，转换为与该气体浓度相对应的输出信号。
MQ-7气体传感器对一氧化碳的灵敏度高，这种传感器可检测多种含一氧化碳的气体，是一款适合多种应用的低成本传感器。
特点 元件外形结构 *对一氧化碳气体有良好的灵敏度 *长寿命、低成本 *简单的驱动电路即可应用*家庭用气体泄漏报警器 *工业用一氧化碳气体报警器 *便携式气体检测器技术指标基本测试回路上图是传感器的基本测试电路。
该传感器需要施加2个电 压：加热器电压（V H ）和测试电压（V C ）。
其中 V H 用于为传 感器提供特定的工作温度。
V C 则是用于测定与传感器串联 的负载电阻（R L ）上的电压（V RL ）。
这种传感器具有轻微的 极性， V C 需用直流电源。
在满足传感器电性能要求的前提 下，V C 和V H 可以共用同一个电源电路。
为更好利用传感器的 性能，需要选择恰当的RL 值。
敏感体功耗（Ps ）值可用计算下式：Ps=Vc 2×Rs/(Rs+R L )2产品型号 MQ-7产品类型 半导体气敏元件标准封装 塑封检测气体 一氧化碳检测浓度 10-1000ppmCO 标准电路条件回路电压 V c ≤10V DC加热电压 V H 5.0V±0.2V ACorDC （高） 1.5V ±0.1V ACorDC （低）加热时间 T L 60±1S （高）90±1S （低）负载电阻R L 可调标准测试条件下元件特性 加热电阻 R H 31Ω±3Ω（室温）加热功耗 P H ≤350mW敏感体表面电阻 R s 2K Ω-20K Ω(in100ppmCO) 灵敏度 S Rs(in air)/Rs(100ppmCO)≥5浓度斜率α≤0.6(R 300ppm /R 100ppm CO) 标准测试条件温度、湿度 20℃±2℃；65%±5%RH 标准测试电路 Vc:5.0V±0.1V ； V H （高）: 5.0V±0.1V ； V H（低）: 1.5V±0.1V 预热时间不少于48小时VcV HGNDR LV RL传感器电阻（Rs），可用下式计算： Rs=(Vc/V RL-1)×R LSO9001认证企业灵敏度特性 温/湿度的影响图1是传感器典型的灵敏度特性曲线。
SMC中文四版电子样本第一册(执行元件)2of6
杆侧 气缸通口TP
⑦
⑧
⑥
R□LQB 缸径 -B□ 后退方向锁,右侧配管(虚线为左侧配管) . . ＝ ＝ .TH .TH ⑤ ① ④ ② ③
＝ .Max. T1
杆侧 气缸通口TP
无杆侧 气缸通口TP
⑥ ⑧ ⑦
＝ .Max. T2
＝ .T3
.
.
.
带旁通管路气缸的构成
序号 1 2 3 4 5 6 7 8 名 称 带锁带气缓冲的薄型气缸 PT弯头 节流阀 PT三通 金属体速度控制阀 弯头 旁通管 防火花罩 数量 1 1 1 1 2 2 1 2 型号
47.5 57.5 67.5
19 26 26
!"#$ !"=E
%/ F
!": RQ
安装件型号 CQ-L032
RQL·RDQL
63 80 100
CQ-L040 CQ-L050 CQ-L063 CQ-L080 CQ-L100 30～100 40～100 40～100 81.2 95 111 55 63.5 76 29 33.5 42 18 20 22 43.5 53.5 53.5 11 13 13
旁通配管 无记号 无
R
带旁通配管右配管 (防止落下)
L 带旁通配管左配管 (防止落下)
(
外形尺寸图 (毫米) ¿32(非常停止)
两端螺孔/R□LQA32
PL锁开放通口 加压状态下锁开放 55 22.5 9
锁方向 F 前进方向锁 B 后退方向锁
非 常 停 止
＊配管的左右，是从杆侧观察。
＊1台气缸应订购2只脚座。 ＊脚座型、法兰型附本体安装螺钉。 ＊双耳环型附耳环用销轴，弹性挡圈， 本体安装螺钉及垫圈。
FQP7N65C中文资料
FQP7N65C中文资料Notes:1. Repetitive Rating : Pulse width limited by maximumjunction temperature2. L = 8mH, I AS = 7A, V DD = 50V, R G = 25 ?, Starting T J = 25°C3. I SD ≤ 7A, di/dt ≤200A/μs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 μA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 3.5 A-- 1.2 1.4?g FSForward TransconductanceV DS = 40 V, I D = 3.5 A (Note 4)--8--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--9551245pF C oss Output Capacitance--100130pF C rssReverse Transfer Capacitance--1216pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 325 V, I D = 7A,R G = 25 ?(Note 4, 5)--2050ns t r Turn-On Rise Time --50110ns t d(off)Turn-Off Delay Time --90190ns t f Turn-Off Fall Time --55120ns Q g TotalGate Charge V DS = 520 V, I D = 7A,V GS = 10 V(Note 4, 5)--2836nC Q gs Gate-Source Charge -- 4.5--nC Q gdGate-Drain Charge--12--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----7A I SM Maximum Pulsed Drain-Source Diode Forward Current----28A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 7A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 7A,dI F / dt = 100 A/μs (Note 4)--400--ns Q rrReverse Recovery Charge-- 3.3--μCFQP7N65C/FQPF7N65CDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FAST ?FASTr?FPS?FRFET?GlobalOptoisolator?GTO?HiSeC?I 2C?i-Lo ?ImpliedDisconnect?ISOPLANAR?LittleFET?MICROCOUPLER?MicroFET?MicroPak?MICROWIRE?MSX?M SXPro?OCX?OCXPro?OPTOLOGIC ?OPTOPLANAR?PACMAN?PO P?Power247?PowerSaver?PowerTrench ?QFET ?QS?QT Optoelectronics?Quiet Series?RapidConfigure?RapidConnect?μSerDes?SILENT SWITCHER ?SMART START?SPM?Stealth?SuperFET?SuperSOT?-3SuperSOT?-6SuperSOT?-8SyncFET?TinyLogic ?TINYOPTO?TruTranslation?UHC?UltraFET ? VCX?A CEx?ActiveArray?Bottomless?CoolFET?CROSSVOLT ?DOME?EcoSPARK?E 2CMOS?EnSigna?FACT?FACT Quiet Series?Across the board. Around the world.?The Power Franchise ? Programmable Active Droop?。
FS70VSJ-06F-T11资料
Maximum Safe Operating Area
Drain Power Dissipation PD (W)
125 100 75 50 25 0
Drain Current ID (A) 10 ms 100 ms DC
5 7 101 2 3 5 7 102
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.1.00, Aug.20.2004, page 4 of 6
元器件交易网
FS70VSJ-06F
On-State Resistance vs. Channel Temperature (Typical)
VGS = 0V Pulse Test
Gate-Source Voltage VGS (V)
Tch = 25°C ID = 70A
Source Current IS (A)
8
80
Tc = 125°C
60
6
VDS = 10V 20V
4
40
40V
2
75°C 25°C
20
0 0
40
80
120
160
200
0
104 7 5 3 2 103 7 5
Ciss
Switching Time (ns)
Tch = 25°C f = 1MHz VGS = 0V
td(off) tf
Coss
Crss 3 10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
102 7 5 td(on) 4 3 Tch = 25°C 2 VDD = 30V VGS = 10V RGEN = RGS = 50Ω 1 10 100 2 3 4 5 7 101 2 3 4 5 7 102
场效应管参数查询库文库(精)
场效应管参数查询库文库.txt 型号电压电流功率封装极性 15N80 800V 15A TO-3PN IGBT 16N06 60V 16A 1N60 600V 1A 20N60 600V 20A TO-3PN N-FET25N120 1200V 25A TO-3PN IGBT 2N60 600V 2A 54W TO-220 N-FET 2N60 小 N-FET 30N120 1200V 30A TO-3PN IGBT 4N50 500V 4A 75W TO-220 N-FET 4N80 800V 4A 75W TO-220 N-FET 50N06 46A 60V 105W TO-220 N-FET 6N60 600V 6A 125W TO-220F N-FET 7N60 600V 7A 147W TO-220F N-FET BUP203 1000V 23A 165W TO-220 IGBT BUP304 1000V 35A 310W TO-3PN IGBT GT40T101 1500V 40A TO-3PN IGBT GT60N90 900V 60A TO-3PN IGBT IRF1010E 55V 84A 170W TO-220 N-FET IRF150 100V 40A 150W TO-3PN N-FET IRF250 200V 30A 150W TO-3 N-FET IRF460 500V 21A 300W TO-3 N-FET IRF4905 55V 74A 200W TO-220 P-FET IRF530 100V 14A 79W TO-220 N-FET IRF5305 55V 31A 110W TO-220 N-FET IRF540N100V 28A 150W TO-220 N-FET IRF540N 100V 28A 150W TO-220 N-FET IRF610 200V 3.3A 40W TO-220 N-FET IRF620 200V 5A 40W TO-220 N-FET IRF630 200V9A 75W TO-220 N-FET IRF630 200V 9A 75W TO-220 N-FET IRF640 200V 18A125W TO-220 N-FET IRF640 200V 18A 125W TO-220 N-FET IRF710原 400V 2A36W TO-220 N-FET IRF730 400V 5.5A 75W TO-220 N-FET IRF730 400V 5.5A 75W TO-220 N-FET IRF740 400V 10A 125W TO-220 N-FET IRF740 400V 10A 125W TO-220 N-FET IRF830 500V 4.5A 75W TO-220 N-FET IRF830 500V 4.5A 75W TO-220N-FET IRF840 500V 8A 125W TO-220 N-FET IRF840 500V 8A 125W TO-220 N-FET IRF9530 100V 12A 75W TO-220 P-FET IRF9530 100V 12A 75W TO-220 P-FETIRF9540 100V 19A 125W TO-220 P-FET IRF9630 200V 6.5A 75W TO-220 P-FET IRF9630 200V 6.5A 75W TO-220 P-FET IRF9640 200V 11A 125W TO-220 P-FET IRF9Z34 60V 18A 74W TO-220 N-FET IRFP150A 43A 100V 193W TO-3PN N-FET IRFP250 200V 33A 180W TO-3PN N-FET IRFP260 200V 46A 280W TO-3PN N-FET IRFP264 250V 38A 280W TO-3PN N-FET IRFP350A 400V 17A 200W TO-3PN N-FET IRFP450 500V 14A 180W TO-3PN N-FET IRFP460 500V 20A 250W TO-3PN N-FET IRFZ44N 55V 49A 110W TO-220 N-FET IRG4BC30F 600V 30A TO-220 IGBTK1081 800V 7A 125W TO-3PN N-FET K1082 800V 8A 125W TO-3PN N-FET K1117600V 6A 100W TO-220 N-FET K1118 600V 6A 45W TO-220F N-FET K1119 1000V 4A 100W TO-220 N-FET K1120 1000V 8A 150W TO-3PN N-FET K1358 900V 9A 150W TO-3PN N-FET K1389 60V 50A 125W TO-3PN N-FET K1489 1000V 12A200W TO-3PN N-FET K1507 600V 9A 50W TO-220F N-FET K1531 500V 15A 150W TO-3PN N-FET K1940 600V 12A 125W TO-3PN N-FET K2028 600V 6A 35W TO-220F N-FET K2141 600V 6A 35W TO-220F N-FET K2333 700V 6A 50W TO-220F N-FET K2543 500V 8A 40W TO-220F N-FET K2545 600V 6A 40W TO-220 N-FETK2610 900V 5A 125W TO-3PN N-FET K2611 900V 9A 150W TO-3PN N-FET K2645 600V 9A 50W TO-220F N-FET K2645 600V 9A 50W TO-220F N-FET K2648 800V9A 150W TO-3PN N-FET K2651 900V 6A 50W TO-220F N-FET K2652 900V 6A 125W TO-3PN N-FET K2654 900V 8A 150W TO-3PN N-FET K2677 900V 10A 120W TO-3PN N-FET K2750 600V 3.5A 35W TO-220F N-FET K2761 600V 10A 50W TO-220F N-FET K2765 800V 7A 125W TO-3PN N-FET K727 900V 5A 125W TO-3PN N-FET K787 900V 8A 150W TO-3PN N-FETK902 250V 30A 125W TO-3PN N-FET K952 800V 2.5A 45W TO-3PN N-FETK955 800V 5A 125W TO-3PN N-FET K956 800V 9A 150W TO-3PN N-FET K962 900V 8A 150W TO-3PN N-FET 全新原装仙童系列 FQP50N06 FQP65N06 FQP85N06 FQP70N08 FQP90N08 FQP33N10 FQP55N10 FQP70N10 FQP90N10v2100V/9A/0.01Ω/TO220 FQP46N15 150V/46A/0.14Ω/TO220 FQP34N20200V/31A/0.065Ω/TO220 FQP13N50 500V/13A/0.33Ω/TO220 FQP18N50v2500V/18A/0.225Ω/TO220 FQP5N60C 600V/4.5A/2Ω/TO220 FQP12N60600V/12A/0.55Ω/TO220 HGTG5N120BND 1200V/21A/167W/Tf130nsHGTG10N120BND 1200V/35A/298W/Tf100ns HGTG11N120CND1200V/43A/298W/Tf190ns HGTG18N120BND 1200V/24A/192W/Tf70nsFGA15N120AND 1200V/40A/310W/Tf70ns FGA25N120AND1200V/40A/310W/Tf70ns FGA25N135AND 1350V/40A310W/Tf70nsSGP10N60RUFD 600V/16A/75W/TO220 SGP15N60RUFD 600V/24A/160W/TO-3P SGP20N60RUFD 600V/32A/195W/TO-3P SGP30N60RUFD 600V/48A/235W/TO-3PSGP50N60RUFD 600V/80A/250W/TO264 FQP6N80C 800V5.5A/2.1Ω/TO220 FQP7N80C 800V6.6A/2.1Ω/TO220 FQP4N90C 900V4A/3.5Ω/TO220 FQP4N90 900V4.2A/2.7Ω/TO220 FQP5N90 900V5.4A/1.8Ω/TO220 FQP6N90C900V6A/1.93Ω/TO220 FQP9N90C 900V/8A/1.12Ω/TO220 FQA90N0880V/90A/0.012Ω/TO3P FQA160N08 80V/160A/0.0056Ω/TO3P FQA70N10100V/70A/0.019Ω/TO3P FQA140N10 100V/140A/0.008Ω/TO3P FQA70N15150V/70A/0.023Ω/TO3P FQA90N15 150V/90A/0.014Ω/TO3P FQA34N20200V/34A/0.06Ω/TO3P FQA48N20 200V/48A/0.037Ω/TO3P FQA65N20200V/65A/0.025Ω/TO3P FQA40N25 250V/40A/0.051Ω/TO3P FQA55N25250V/50A/0.03Ω/TO3P FQA62N25C 250V/62A/0.029Ω/TO3P FQA17N40400V/17A/0.21Ω/TO3P FQA35N40 400V/35A/0.08Ω/TO3P FQA16N50500V/16A/0.25Ω/TO3P FQA24N50 500V/24A/0.156Ω/TO3P FQA28N50500V/28A/0.126Ω/TO3P FQA24N60 600V/23.5A/0.18Ω/TO3P FQA10N80C800V/10A/0.93Ω/TO3P FQA13N80 800V/13A/0.58Ω/TO3P FQA7N90900V/7.4A/1.2Ω/TO3P FQA9N90C 900V/9A/1.12Ω/TO3P FQA11N90C900V/11A/0.91Ω/TO3P FQA40N50 500V/40A/0.085Ω/TO264 全系列原装仙童型号参数FQP6N80C 800V5.5A/2.1Ω/TO220 FQP7N80C 800V6.6A/2.1Ω/TO220FQP4N90C 900V4A/3.5Ω/TO220 FQP4N90 900V4.2A/2.7Ω/TO220 FQP5N90900V5.4A/1.8Ω/TO220 FQP6N90C 900V6A/1.93Ω/TO220 FQP9N90C900V/8A/1.12Ω/TO220 FQA90N08 80V/90A/0.012Ω/TO3P FQA160N0880V/160A/0.0056Ω/TO3P FQA70N10 100V/70A/0.019Ω/TO3P FQA140N10100V/140A/0.008Ω/TO3P FQA70N15 150V/70A/0.023Ω/TO3P FQA90N15150V/90A/0.014Ω/TO3P FQA34N20 200V/34A/0.06Ω/TO3P FQA48N20200V/48A/0.037Ω/TO3P FQA65N20 200V/65A/0.025Ω/TO3P FQA40N25250V/40A/0.051Ω/TO3P FQA55N25 250V/50A/0.03Ω/TO3P FQA62N25C250V/62A/0.029Ω/TO3P FQA17N40 400V/17A/0.21Ω/TO3P FQA35N40400V/35A/0.08Ω/TO3P FQA16N50 500V/16A/0.25Ω/TO3P FQA24N50500V/24A/0.156Ω/TO3P FQA28N50 500V/28A/0.126Ω/TO3P FQA24N60600V/23.5A/0.18Ω/TO3P FQA10N80C 800V/10A/0.93Ω/TO3P FQA13N80800V/13A/0.58Ω/TO3P FQA7N90 900V/7.4A/1.2Ω/TO3P FQA9N90C900V/9A/1.12Ω/TO3P FQA11N90C 900V/11A/0.91Ω/TO3P FQA40N50500V/40A/0.085Ω/TO264 FQP50N06 FQP65N06 FQP85N06 FQP70N08 FQP90N08 FQP33N10 FQP55N10 FQP70N10 FQP90N10v2100V/9A/0.01Ω/TO220 FQP46N15 150V/46A/0.14Ω/TO220 FQP34N20200V/31A/0.065Ω/TO220 FQP13N50 500V/13A/0.33Ω/TO220 FQP18N50v2500V/18A/0.225Ω/TO220 FQP5N60C 600V/4.5A/2Ω/TO220 FQP12N60600V/12A/0.55Ω/TO220 FQP50N06 FQP65N06 FQP85N06 FQP70N08 FQP90N08 FQP33N10 FQP55N10 FQP70N10 FQP90N10v2 100V/9A/0.01Ω/TO220 FQP46N15 150V/46A/0.14Ω/TO220 FQP34N20 200V/31A/0.065Ω/TO220 FQP13N50500V/13A/0.33Ω/TO220 FQP18N50v2 500V/18A/0.225Ω/TO220 FQP5N60C600V/4.5A/2Ω/TO220 FQP12N60 600V/12A/0.55Ω/TO220 专业原装正品仙童IGBT 系列,广泛用于UPS电源,AC&DC马达驱动,电磁炉等产品设备以下是常用IGBT型号,因板面有限,未能尽详,如需详细产品技术资料请致电我司. FGA25N120AND TO-3P IGBT 40A 1200V 310W FGA15N120AND TO-3P IGBT 25A 1200V 192WSGH10N120RUFD TO-3P IGBT 16A 1200V 125W SGH15N120RUFD TO-3P IGBT 24A 1200V 180W SGH20N120RUFD TO-3P IGBT 32A 1200V 230WSGL25N120RUFD TO-264 IGBT 40A 1200V 270W HGTG11N120CND TO-247 IGBT 43A 1200V 298W (11N120CND HGTG10N120BND TO-247 IGBT 35A 1200V 298W (10N120BND HGTG18N120BND TO-247 IGBT 54A 1200V 390W(18N120BND SGL60N90DG3 TO-264 IGBT 60A 900V 180W FGL60N100D TO-264 IGBT 60A 1000V 176W FGL40N150D TO-264 IGBT 40A 1500V 200W FGL60N170D TO-264 IGBT 60A 1700V 200W HGTG12N60A4D TO-247 IGBT 54A 600V 167W(12N60A4D HGTP12N60A4D TO-220AB IGBT 54A 600V 167W(12N60A4DHGT1S12N60A4DS TO-263 IGBT 54A 600V 167W(12N60A4D HGTG20N60A4D TO-247 IGBT 70A 600V 290W(20N60A4D HGTG30N60A4D TO-247 IGBT 75A600V 463W(30N60A4D FGH40N6S2D TO-247 IGBT 75A 600V 290W FGH50N6S2DTO-247 IGBT 75A 600V 463W FGK60N6S2D TO-247 IGBT 75A 600V 625WSGP13N60UFD TO-220 IGBT 13A 600V 60W SGH23N60UFD TO-3P IGBT 23A600V 100W SGH40N60UFD TO-3P IGBT 40A 600V 160W SGH80N60UFD TO-3P IGBT 80A 600V 195W SGL160N60UFD TO-264 IGBT 160A 600V 250WSGL5N150UF TO-264 IGBT 10A 1500V 125W SGP10N60RUFD TO-220 IGBT 16A 600V 75W SGH15N60RUFD TO-3P IGBT 24A 600V 160W SGH20N60RUFD TO-3P IGBT 32A 600V 195W SGH30N60RUFD TO-3P IGBT 48A 600V 235WSGL50N60UFD TO-264 IGBT 80A 600V 250W FMG2G100US60 7PM-GA IGBT100A 600V 400W(模块 FMG2G150US60 7PM-HA IGBT 150A 600V 595W(模块FMG2G200US60 7PM-HA IGBT 200A 600V 695W(模块 FMG2G300US60 7PM-IA IGBT 300A 600V 892W(模块 FMG2G400US60 7PM-IA IGBT 800A 600V 1136W(模块 FMG2G150US60E 7PM-GA IGBT 300A 600V 500W(模块 FMG2G300US60E7PM-HA IGBT 300A 600V 892W(模块 FGH50N3 TO-247 IGBT 75A 300V 463WISL9R460P2,ISL9R460S2,ISL9R460S3S TO-220AC,TO-262,TO-263AB 4A 600V 58W ISL9R860P2,ISL9R860S2,ISL9R860S3S TO-220AC,TO-262,TO-263AB 8A 600V 85W ISL9R156G2,ISL9R150P2,ISL9R1560S2,ISL9R1560S3S TO-247,TO-220AC,TO-262,TO0263AB ISL9R3060G2,ISL9R3060P2, TO-247 TO-220AC 30A 600VISL9K3060G3 TO-247 30A 600V************************************************************************************************************************ ****。