RN1108FS中文资料

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)RN1107FS,RN1108FS,RN1109FSSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications• Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN2107FS~RN2109FSEquivalent Circuit and Bias Resistor ValuesAbsolute Maximum Ratings (Ta = 25°C) (Q1, Q2common)Characteristics Symbol Rating UnitCollector-base voltage V CBO 20 V Collector-emitter voltageRN1107FS~RN1109FSV CEO 20 VRN1107FS 6RN1108FS 7 Emitter-base voltageRN1109FSV EBO 15V Collector currentI C 50 mA Collector power dissipation P C 50 mW Junction temperature T j 150 °C Storage temperature rangeRN1107FS~RN1109FST stg−55~150°CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Unit: mmWeight: 0.0006g (typ.)BType No.R1 (k Ω) R2 (k Ω)RN1107FS 10 47 RN1108FS 22 47 RN1109FS 4722Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)Characteristics Symbol Test Condition Min Typ. Max UnitI CBO V CB = 20 V, I E = 0 ⎯ ⎯ 100Collector cut-off currentRN1107FS~1109FSI CEOV CE = 20 V, I B = 0⎯ ⎯ 500nARN1107FS V EB = 6 V, I C = 00.088 ⎯ 0.131RN1108FS V EB = 7 V, I C = 0 0.085 ⎯ 0.126Emitter cut-off currentRN1109FSI EBO V EB = 15 V, I C = 00.182⎯ 0.271mA RN1107FS 120 ⎯ ⎯RN1108FS 120 ⎯ ⎯ DC current gainRN1109FSh FEV CE = 5 V, I C = 10 mA100⎯⎯Collector-emittersaturation voltageRN1107FS~1109FS V CE (sat)I C = 5 mA, I B = 0.25 mA⎯⎯ 0.15VRN1107FS0.7 ⎯ 1.5RN1108FS 0.8 ⎯ 2.2 Input voltage (ON)RN1109FS V I (ON)V CE = 0.2 V, I C = 5 mA 1.6 ⎯ 5.0 V RN1107FS0.5 ⎯ 1.0 RN1108FS 0.6 ⎯ 1.1 Input voltage (OFF)RN1109FSV I (OFF)V CE = 5 V, I C = 0.1 mA1.3⎯ 2.6V Collector output capacitanceRN1107FS~1109FS C obV CB = 10 V, I E = 0, f = 1 MHz⎯ 1.2 ⎯pFRN1107FS8 10 12 RN1108FS 17.6 22 26.4Input resistorRN1109FS R1⎯37.6 47 56.4k ΩRN1107FS0.17 0.213 0.255RN1108FS 0.374 0.468 0.562Resistor ratioRN1109FSR1/R2⎯1.712.14 2.560.1110100IC - VI(ON)0.11101000.1110100IC - VI(ON)0.11101000.11101000.20.40.60.811.21.4IC - VI(OFF)101001000100000.20.40.60.811.21.41.6IC - VI(OFF)101001000100000.611.41.82.22.63INPUT VOLTAGE VI(ON) (V)INPUT VOLTAGE VI(OFF) (V)INPUT VOLTAGE VI(ON) (V)C O L L E C T O R C U R R E N T I C (m A )INPUT VOLTAGE VI(ON) (V)C O L L E C T O R C U R R E N T I C (m A )INPUT VOLTAGE VI(OFF) (V)C O L L E C T O R C U R R E N T I C (μA )INPUT VOLTAGE VI(OFF) (V)C O L L E C T O R C U R R E N T I C (μA )RN1108FS RN1108FSRN1109FS RN1109FShFE - IC101001000110100hFE - IC101001000110100RN1108FShFE - IC101001000110100RN1109FSVCE(sat) - IC101001000110100VCE(sat) - IC101001000110100RN1108FSVCE(sat) - IC101001000110100RN1109FSCOLLECTOR CURRENT IC (mA)D C C U R RE N T G A I N hF ECOLLECTOR CURRENT IC (mA)C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E V C E (s a t ) (m V )COLLECTOR CURRENT IC (mA)D C C U R RE N T G A I N hF ECOLLECTOR CURRENT IC (mA)D C C U R RE N T G A I N hF ECOLLECTOR CURRENT IC (mA)C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E V C E (s a t ) (m V )COLLECTOR CURRENT IC (mA)C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E V C E (s a t ) (m V )RN1107FSRN1107FSHANDLING PRECAUTIONWhen handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.RESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。