Method of forming Cu-Ca-O thin films on Cu surface
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专利名称：Method of forming Cu-Ca-O thin films on Cu
surfaces in a chemical solution and
semiconductor device thereby
发明人：Sergey Lopatin,Krishnashree Achuthan
申请号：US09895038
申请日：20010629
公开号：US06423433B1
公开日：
20020723
专利内容由知识产权出版社提供
专利附图：
摘要：A method of fabricating a semiconductor device having a Cu—Ca—O thin film formed on a Cu surface by immersing the Cu surface into a unique chemical (electroless
plating) solution containing salts of calcium (Ca) and copper (Cu), their complexing agents, a reducing agent, a pH adjuster, and surfactants; and a semiconductor device thereby formed for improving Cu interconnect reliability, electromigration resistance, and corrosion resistance. The method controls the parameters of pH, temperature, and time in order to form a uniform conformal Cu-rich Cu—Ca—O thin film, possibly containing carbon (C) and/or sulphur (S), for reducing -electromigration in Cu interconnect lines by decreasing the drift velocity therein which decreases the Cu migration rate in addition to decreasing the void formation rate. The method for forming a semiconductor device having a copper-calcium-oxide (Cu—Ca—O) thin film on a copper (Cu) surface, the Cu surface having been formed by CVD, PVD, or electroplating, by treating the Cu surface in a chemical solution, comprises the steps of: (1) providing the chemical solution which comprises: (a) at least one calcium (Ca) ion source for providing a plurality of Ca ions; (b) at least one complexing agent for complexing the plurality of Ca ions; (c) at least one copper (Cu) ion source for providing a plurality of Cu ions; (d) at least one complexing agent for complexing the plurality of Cu ions; (e) at least one pH adjuster; (f) at least one reducing agent for facilitating deposition of the plurality of Cu ions; (g) at least one wetting agent for stabilizing the chemical solution; and (h) a volume of water, (a) through (g) being dissolved in (h); (2) immersing the Cu surface in said chemical solution, thereby forming the Cu—Ca—O thin film on the Cu surface; and (3) rinsing the Cu—Ca—O thin film formed on the Cu surface in water; drying the the Cu—Ca—O thin film formed on the Cu surface under a nitrogen flow (GN); and completing formation of the semiconductor device.
申请人：ADVANCED MICRO DEVICES, INC.
代理机构：LaRiviere, Grubman & Payne, LLP
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