RB060MM-30场效应(MOS管)原厂DCY品牌推荐

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DC4430(AO4430)场效应MOS管厂家DCY品牌推荐

TJ, Tstg RθJA
-55 to 150 75
oC oC/W
-1-

ELECTRICAL CHARACTERISTICS 一般电气特性
DC4430
Parameter 参数
符号
Test Condition 测试条件
最小值典型值最大值
单位
Static 静态参数
VDS = 24V, VGS = 0V
1
uA
Gate Body Leakage 漏极短路时截止栅电流
IGSS
VGS = ± 20V, VDS = 0V
± 100
nA
Forward Transconductance 正向跨导 Gate Resistance 栅极电阻
gfs
VDS = 5V, ID = 18A
ID
IDM
TA = 25oC PD
TA = 75oC
18 A
80
3 W
2.1
Operating Junction and Storage Temperature Range 使用及储存温度 Junction-to-Ambient Thermal Resistance (PCB mounted) 结环热阻
0.35
0.49
1.35
1.75
0.375 REF. 45°
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC 极限参数和热特性
Parameter 极限参数
Symbol 符号
Turn-Off Fall Time 关断下降时间

MOSFET品牌大集结

MOSFET品牌大集结MOSFET（金属氧化物半导体场效应晶体管）是一种常用的功率半导体器件，广泛应用于电子设备中的开关、放大和调节电路。

随着市场需求的增长，MOSFET 品牌也日益增多，为了帮助消费者更好地了解和选择适合自己需求的MOSFET品牌，我们进行了一次MOSFET品牌大集结。

在这次集结中，我们收集了市场上主要的MOSFET品牌，并对其进行了详细的介绍和比较。

以下是其中几个知名品牌的介绍：1. 品牌A：该品牌是市场上最知名的MOSFET品牌之一。

他们的产品质量可靠，性能稳定。

该品牌的MOSFET具有低导通电阻、高开关速度和低功耗的特点，非常适合高频应用和功率放大器。

2. 品牌B：该品牌的MOSFET在市场上有很高的口碑。

他们的产品具有优异的热稳定性和耐压能力，适用于高温环境和高电压应用。

此外，该品牌的MOSFET还具有低漏电流和低噪声的特点，非常适合精密仪器和音频放大器。

3. 品牌C：该品牌的MOSFET以其卓越的性价比而闻名。

他们的产品不仅价格实惠，而且质量可靠。

该品牌的MOSFET具有低导通电阻、高开关速度和低功耗的特点，适用于各种功率开关和电源应用。

除了以上品牌，市场上还有许多其他优秀的MOSFET品牌，如品牌D、品牌E 等。

消费者可以根据自己的需求和预算选择适合自己的品牌。

在选择MOSFET品牌时，消费者应注意以下几点：1. 产品质量：选择知名品牌，确保产品质量可靠。

可以通过查看品牌的认证和资质情况来评估其产品质量。

2. 性能参数：根据自己的需求选择合适的性能参数，如导通电阻、开关速度、耐压能力等。

不同的应用场景对这些参数有不同的要求。

3. 价格：根据自己的预算选择适合的价格范围。

注意不要只追求低价，而忽视了产品的质量和性能。

4. 售后服务：选择有良好售后服务的品牌，以便在使用过程中遇到问题时能够得到及时的支持和解决方案。

总结起来，MOSFET品牌大集结为消费者提供了一个全面了解和比较不同品牌MOSFET的机会。

AO4407(DT4407)场效应管MOS原厂DCY品牌推荐

PD
TJ, Tstg RθJA
3 2.1 -55 to 150 75
W
oC oC/W
-1-

ELECTRICAL CHARACTERISTICS 一般电气特性
AO4407(DT4407)
Parameter 参数
符号
Test Condition 测试条件
最小值典型值最大值
Features 特性
Advanced trench process technology
高级的加工技术
High Density Cell Design For Ultra Low On-Resistance 极低的导通电阻高密度的单元设计
Package Dimensions 封装尺寸及外形图
Date Code
脉冲漏极电流
ID
-12
A
IDM
-60
Maximum Power Dissipation 最大耗散功率
PD TA = 75oC
Operating Junction and Storage Temperature Range 使用及储存温度
Junction-to-Ambient Thermal Resistance (PCB mounted) 结环热阻
Parameter 极限参数
Symbol 符号
Limit 范围
Unit 单位
Drain-Source Voltage 漏源电压 Gate-Source Voltage 栅源电压
VDS
-30
V
VGS
± 25
Continuous Drain Current 连续漏极电流
Pulsed Drain Current

场效应管大全

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场效应管TO-263/262 TOSHIBA2SK3895 场效应管TO-263/262 PANASONIC 2SK3896 场效应管TO-263/262 PANASONIC 2SK3898 场效应管TO-263/262 PANASONIC 2SK3899 场效应管TO-263/262 NEC2SK3900 场效应管TO-263/262 NEC2SK3943 场效应管TO-263/262 NEC2SK3995 场效应管TO-263/262 PANASONIC 2SK4000 场效应管TO-263/262 PANASONIC 2SK704 场效应管TO-263/262 NEC3055AS 场效应管TO-263/26230N20 场效应管TO-263/262 MOTOROLA 32N03L 场效应管TO-263/262 INFINEON32N12 场效应管TO-263/262 FAIRCHILD35N10 场效应管TO-263/262 INFINEON35N15 场效应管TO-263/262 MOTOROLA 35N40 场效应管TO-263/262 FAIRCHILD3C45 场效应管TO-263/262 FAIRCHILD3N60A4D 场效应管TO-263/262 FAIRCHILD 40N03S 场效应管TO-263/262 APEC45N03 场效应管TO-263/262 PHILIPS/SI46N03L 场效应管TO-263/262 INFINEON47N10 场效应管TO-263/262 INFINEON5401DM 场效应管TO-263/262 MOTOROLA/HARRIS 5501DM 场效应管TO-263/262 MOTOROLA/HARRIS 5503DM 场效应管TO-263/262 MOTOROLA/HARRIS 55N03LT 场效应管TO-263/262 PHILIPS56N03L 场效应管TO-263/262 INFINEON5N2007 场效应管TO-263/262 HITACHI5N2307 场效应管TO-263/262 HITACHI5N2512 场效应管TO-263/262 FAIRCHILD5N2901 场效应管TO-263/262 HITACHI5N3007 场效应管TO-263/262 HITACHI5N3301 场效应管TO-263/262 HITACHI6020V4 场效应管TO-263/26260L02S 场效应管TO-263/262 APEC60N03 场效应管TO-263/262 FAIRCHILD/APEC 60N04 场效应管TO-263/262 NEC60N06 场效应管TO-263/262 INFINEON/APEC 65N02R 场效应管TO-263/262 ON65N03L 场效应管TO-263/26269N03LT 场效应管TO-263/262 PHILIPS6R099 场效应管TO-263/262 INFINEON70L02S 场效应管TO-263/262 APEC70N03 场效应管TO-263/262 SI/APEC70N10 场效应管TO-263/262 NEC/INFINEON70T03S 场效应管TO-263/262 APEC75321S 场效应管TO-263/262 HARRIS/FAIRCHILD 75329S 场效应管TO-263/262 HARRIS/FAIRCHILD 75332S 场效应管TO-263/262 HARRIS/FAIRCHILD 75333S 场效应管TO-263/262 HARRIS/FAIRCHILD 75339S 场效应管TO-263/262 HARRIS/FAIRCHILD 75343S 场效应管TO-263/262 HARRIS/FAIRCHILD 75344S 场效应管TO-263/262HARRIS/FAIRCHILD 75345S 场效应管TO-263/262 HARRIS/FAIRCHILD 75545S 场效应管TO-263/262HARRIS/FAIRCHILD 75623S 场效应管TO-263/262 HARRIS/FAIRCHILD 75637S 场效应管TO-263/262HARRIS/FAIRCHILD 75639S 场效应管TO-263/262 HARRIS/FAIRCHILD 75645S 场效应管TO-263/262HARRIS/FAIRCHILD 75842S 场效应管TO-263/262 HARRIS/FAIRCHILD 75N03 场效应管TO-263/262 SI76121S 场效应管TO-263/262 HARRIS/FAIRCHILD 76122S 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场效应管TO-263/262 FAIRCHILDFDB8874 场效应管TO-263/262 FAIRCHILDFDB8880 场效应管TO-263/262 FAIRCHILDFDB8896 场效应管TO-263/262 FAIRCHILDFDB95N03L 场效应管TO-263/262 FAIRCHILDFDI038AN06AO 场效应管TO-263/262 FAIRCHILD FE09N50G 场效应管TO-263/262 FEFIS22N10 场效应管TO-263/262 HARRISFIS25N06 场效应管TO-263/262 HARRISFIS45N06 场效应管TO-263/262 HARRISFIS4N100 场效应管TO-263/262 FAIRCHILDFIS50N06 场效应管TO-263/262 HARRIS/FAIRCHILD FIS60P03 场效应管TO-263/262 HARRIS/FAIRCHILD FIS70N06 场效应管TO-263/262 HARRIS/FAIRCHILD FIS80N06 场效应管TO-263/262 HARRISFK14VS-10 场效应管TO-263/262 MITSUBISHIFK14VS-9 场效应管TO-263/262 MITSUBISHIFK16VS-5 场效应管TO-263/262 MITSUBISHIFK20VS-5 场效应管TO-263/262 MITSUBISHIFKV460S 场效应管TO-263/262FQB10N20 场效应管TO-263/262 FAIRCHILDFQB10N60C 场效应管TO-263/262 FAIRCHILD FQB12N50 场效应管TO-263/262 FAIRCHILDFQB12N60 场效应管TO-263/262 FAIRCHILDFQB13N06L 场效应管TO-263/262 FAIRCHILD FQB13N10L 场效应管TO-263/262 FAIRCHILD FQB140N04L 场效应管TO-263/262 FAIRCHILD FQB14N10 场效应管TO-263/262 FAIRCHILDFQB14N30 场效应管TO-263/262 FAIRCHILDFQB16N25 场效应管TO-263/262 FAIRCHILDFQB25N33 场效应管TO-263/262 FAIRCHILD FQB27N25 场效应管TO-263/262 FAIRCHILD FQB27P06 场效应管TO-263/262 FAIRCHILD FQB2N90 场效应管TO-263/262 FAIRCHILD FQB30N06L 场效应管TO-263/262 FAIRCHILDFQB32N20C 场效应管TO-263/262 FAIRCHILD FQB33N10 场效应管TO-263/262 FAIRCHILD FQB34N20L 场效应管TO-263/262 FAIRCHILD FQB44N10 场效应管TO-263/262 FAIRCHILD FQB46N15 场效应管TO-263/262 FAIRCHILDFQB47P06 场效应管TO-263/262 FAIRCHILD FQB4N90 场效应管TO-263/262 FAIRCHILD FQB50N06L 场效应管TO-263/262 FAIRCHILD FQB55N10 场效应管TO-263/262 FAIRCHILD FQB5N50C 场效应管TO-263/262 FAIRCHILDFQB65N06 场效应管TO-263/262 FAIRCHILD FQB6N25 场效应管TO-263/262 FAIRCHILD FQB6N60 场效应管TO-263/262 FAIRCHILD FQB6N70 场效应管TO-263/262 FAIRCHILD FQB6N90 场效应管TO-263/262 FAIRCHILD FQB7N60S 场效应管TO-263/262 FAIRCHILD FQB7N65C 场效应管TO-263/262 FAIRCHILD FQB85N06 场效应管TO-263/262 FAIRCHILD FQB8N25 场效应管TO-263/262 FAIRCHILD FQB8N60C 场效应管TO-263/262 FAIRCHILD FQB9N25 场效应管TO-263/262 FAIRCHILD FQB9N50 场效应管TO-263/262 FAIRCHILD FQB9P25 场效应管TO-263/262 FAIRCHILD FQI13N50C 场效应管TO-263/262 FAIRCHILD FQI19N20 场效应管TO-263/262 FAIRCHILD FQI3N90 场效应管TO-263/262 FAIRCHILDFQI4N80 场效应管TO-263/262 FAIRCHILD FQI5N60C 场效应管TO-263/262 FAIRCHILD FQI6N40 场效应管TO-263/262 FAIRCHILD FQI6N50 场效应管TO-263/262 FAIRCHILD FQI7N80 场效应管TO-263/262 FAIRCHILD FQI8N60C 场效应管TO-263/262 FAIRCHILD FQP2N60C 场效应管TO-263/262 FAIRCHILD FQP5N90 场效应管TO-263/262 FAIRCHILDFS100VS-3 场效应管TO-263/262 MITSUBISHI FS10VS-12 场效应管TO-263/262 MITSUBISHI FS10VS-2 场效应管TO-263/262 MITSUBISHI FS10VS-6 场效应管TO-263/262 MITSUBISHIFS10VSJ-2 场效应管TO-263/262 MITSUBISHI FS10VSJ-6 场效应管TO-263/262 MITSUBISHI FS10VSJ-9 场效应管TO-263/262 MITSUBISHI FS11N50A 场效应管TO-263/262 IRFS14VS-10 场效应管TO-263/262 MITSUBISHI FS14VS-9 场效应管TO-263/262 MITSUBISHI FS16VS-9 场效应管TO-263/262 MITSUBISHI FS17N20D 场效应管TO-263/262 IRFS20VS-5 场效应管TO-263/262 MITSUBISHI FS23N15D 场效应管TO-263/262 IRFS23N20D 场效应管TO-263/262 IRFS2VS-18 场效应管TO-263/262 MITSUBISHI FS30VS-3 场效应管TO-263/262 MITSUBISHI FS31N20D 场效应管TO-263/262 IRFS3207 场效应管TO-263/262 IRFS38N20D 场效应管TO-263/262 IRFS3VS-18 场效应管TO-263/262 MITSUBISHI FS41N15D 场效应管TO-263/262 IRFS4310 场效应管TO-263/262 IRFS4610 场效应管TO-263/262 IRFS4710 场效应管TO-263/262 IRFS4VS-12 场效应管TO-263/262 MITSUBISHI FS50VS-3 场效应管TO-263/262 MITSUBISHI FS52N15D 场效应管TO-263/262 IRFS59N10D 场效应管TO-263/262 IRFS5VS-10 场效应管TO-263/262 MITSUBISHI FS5VS-14 场效应管TO-263/262 MITSUBISHI FS70VSJ-03 场效应管TO-263/262 MITSUBISHI FS70VSJ-06 场效应管TO-263/262 MITSUBISHI FS7VS-14 场效应管TO-263/262 MITSUBISHIFS7VS-18 场效应管TO-263/262 MITSUBISHI FS9N60A 场效应管TO-263/262 IRFSL11N50A 场效应管TO-263/262 IRFSL23N20D 场效应管TO-263/262 IRFSL3206 场效应管TO-263/262 IRFSL9N60A 场效应管TO-263/262 IRFX6VSJ-06 场效应管TO-263/262 MITSUBISHI FZ14NS 场效应管TO-263/262 IRFZ24NS 场效应管TO-263/262 IRFZ34NS 场效应管TO-263/262 IRFZ44NS 场效应管TO-263/262 IRFZ46NS 场效应管TO-263/262 IRFZ48NS 场效应管TO-263/262 IRG15N60HS 场效应管TO-263/262 INFINEONG20N60C3 场效应管TO-263/262 HARRISG4BC20 场效应管TO-263/262 IRG4BC30 场效应管TO-263/262 IRG7N60C3D 场效应管TO-263/262 HARRIS/FAIRCHILD GB07N120 场效应管TO-263/262 INFINEONGB15N120 场效应管TO-263/262 INFINEONGB7NB60HD 场效应管TO-263/262 STGFB50N03 场效应管TO-263/262GFB75N03 场效应管TO-263/262HBA07M02 场效应管TO-263/262 HARRISHF75152 场效应管TO-263/262HUF75321S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF75329S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF75332S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF75333S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF75339S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF75343S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF75344S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF75345S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF75545S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF75623S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF75637S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF75639S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF75645S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF75842S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF76121S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF76122S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF76129S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF76131S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF76132S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF76137S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF76139S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF76143S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF76145S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF76419S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF76429S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF76432S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF76437S 场效应管TO-263/262 HARRIS/FAIRCHILD HUF76439S 场效应管TO-263/262 HARRIS/FAIRCHILDHUF76633S 场效应管TO-263/262 HARRIS/FAIRCHILD IAA03U02 场效应管TO-263/262 HARRISIKB20T60 场效应管TO-263/262 INFINEONIPB03N03L 场效应管TO-263/262 INFINEON IPB04N03L 场效应管TO-263/262 INFINEON IPB05N03L 场效应管TO-263/262 INFINEON IPB06N03LA 场效应管TO-263/262 INFINEON IPB07N03L 场效应管TO-263/262 INFINEON IPB09N03LA 场效应管TO-263/262 INFINEON IPB10N03L 场效应管TO-263/262 INFINEON IPB14N03LA 场效应管TO-263/262 INFINEONIPB15N03L 场效应管TO-263/262 INFINEON IRF1010NS 场效应管TO-263/262 IRIRF1310NS 场效应管TO-263/262 IRIRF1312S 场效应管TO-263/262 IRIRF1404S 场效应管TO-263/262 IRIRF1405S 场效应管TO-263/262 IRIRF2804S 场效应管TO-263/262 IRIRF2805S 场效应管TO-263/262 IRIRF2807S 场效应管TO-263/262 IRIRF2907ZC 场效应管TO-263/262 IRIRF3205S 场效应管TO-263/262 IR/HARRIS IRF3315S 场效应管TO-263/262 IRIRF3415S 场效应管TO-263/262 IRIRF3515S 场效应管TO-263/262 IRIRF3707ZCS 场效应管TO-263/262 IR IRF3709S 场效应管TO-263/262 IR IRF3710S 场效应管TO-263/262 IR IRF3711S 场效应管TO-263/262 IR IRF3803S 场效应管TO-263/262 IR IRF3808S 场效应管TO-263/262 IR IRF4905S 场效应管TO-263/262 IR IRF510NS 场效应管TO-263/262 IR IRF520NS 场效应管TO-263/262 IR IRF5210S 场效应管TO-263/262 IR IRF5305S 场效应管TO-263/262 IR IRF530NS 场效应管TO-263/262 IR IRF540NS 场效应管TO-263/262 IR IRF610NS 场效应管TO-263/262 IR IRF620NS 场效应管TO-263/262 IR IRF6215S 场效应管TO-263/262 IR IRF630NS 场效应管TO-263/262 IR IRF634S 场效应管TO-263/262 IR IRF640NS 场效应管TO-263/262 IR IRF710NS 场效应管TO-263/262 IR IRF720NS 场效应管TO-263/262 IR。

DC1234推荐LDO原厂DCY品牌

Output Voltage : 50mV increments A
e.g. ②=1,③=5,④=A 1.55V
Active 'High'
①
B
(no pull-down resistor built in)
Package Type
⑤
M
SOT-23-5L
C
Active 'Low' (pull-up resistor built in)
■ Features
Output Voltage Range: 0.85V to 1.8V (selectable in 50mV steps)
Highly Accurate : ±2%（less than 1.5V is ±30mV) Dropout Voltage : 300mV @ 100mA (1.5V type) High Ripple Rejection: 60dB (10kHz) Low Power Consumption: 50μA (TYP.) Maximum Output Current : 300mA（VIN≥2.5V） Standby Current : less than 0.1μA Internal protector: current limiter and short protector Small packages: SOT-23-5,SOT-353 and other
■ Applications
Mobile phones Cordless phones Modem Portable games
Portable AV equipment Reference voltage Battery powered equipment PCMCIA cards

MOSFET品牌大集结

MOSFET品牌大集结MOSFET（金属氧化物半导体场效应晶体管）是一种常见的功率半导体器件，广泛应用于电子设备和电路中。

为了满足市场需求并提供更好的选择，我们进行了一次MOSFET品牌大集结，整理了市场上一些知名的MOSFET品牌及其特点，以帮助您更好地了解和选择合适的产品。

1. 品牌A品牌A是市场上知名的MOSFET品牌之一。

他们的产品具有高性能和可靠性，广泛应用于电源管理、电机驱动和照明等领域。

品牌A的MOSFET采用先进的制造工艺，具有低导通电阻和低开关损耗，能够提供高效率的功率转换。

此外，他们还提供多种封装和电压等级的产品，以满足不同应用的需求。

2. 品牌B品牌B是另一个备受认可的MOSFET品牌。

他们的产品在电源管理、电动车、工业自动化等领域有着广泛的应用。

品牌B的MOSFET具有低导通电阻和低开关损耗，能够提供高效率的功率转换和优异的热特性。

此外，他们还注重产品的可靠性和稳定性，通过严格的质量控制和测试确保产品的性能和一致性。

3. 品牌C品牌C是一家专注于高性能MOSFET的制造商。

他们的产品在通信、汽车电子、工业控制等领域有着广泛的应用。

品牌C的MOSFET采用先进的封装技术和材料，具有低导通电阻、低开关损耗和高温特性。

他们还提供多种不同的产品系列，以满足不同应用的需求，并提供技术支持和解决方案。

4. 品牌D品牌D是一家国际知名的MOSFET制造商。

他们的产品在电源管理、电动车、工业控制等领域有着广泛的应用。

品牌D的MOSFET具有低导通电阻、低开关损耗和高可靠性，能够提供高效率的功率转换和稳定的性能。

他们还注重产品的创新和研发，不断推出新的产品和解决方案，以满足市场的需求。

5. 品牌E品牌E是一家专注于低功耗MOSFET的制造商。

他们的产品在移动设备、消费电子和无线通信等领域有着广泛的应用。

品牌E的MOSFET具有低导通电阻、低开关损耗和快速开关特性，能够提供高效率的功率转换和延长电池寿命。

AO4435(DT4435)场效应管MOS原厂DCY品牌推荐

VDS = -10V, ID = -5A
-30
V
11.0
15.0
mΩ
16.0
22.0
-1
-1.4
-3
V
-1
uA
± 100
nA
21
S
Total Gate Charge 栅极总电荷 Gate-Source Charge 栅-源极电荷 Gate-Drain Charge 栅-漏极电荷 Turn-On Delay Time 导通延迟时间 Turn-On Rise Time 导通上升时间 Turn-Off Delay Time 关断延迟时间 Turn-Off Fall Time 关断下降时间 Input Capacitance 输入电容 Output Capacitance 输出电容 Reverse Transfer Capacitance 反向传输电容 Source-Drain Diode 源漏二极管参数
0.49
1.35
1.75
0.375 REF. 45°
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC 极限参数和热特性
Parameter 极限参数
Symbol 符号
TA = 25oC TA = 75oC
Operating Junction and Storage Temperature Range 使用及储存温度
Junction-to-Ambient Thermal Resistance (PCB mounted) 结环热阻
ID IDM
PD
TJ, Tstg RθJA

DM3400（AO3400）场效应（MOS管）DCY品牌推荐

DM3400（AO3400）场效应（MOS管）DCY品牌推荐0(AO3400)SOT-23場效應晶體管(SOT-23Field EffectTransistors)N -Channel Enhancement-Mode MOS FETs N 沟道增强型MOS 场效应管■MAXIMUM RATINGS最⼤額定值Characteristic 特性參數Symbol 符號Max 最⼤值Unit 單位Drain-Source V oltage 漏極-源極電壓BV DSS 30V Gate-Source Voltage 栅極-源極電壓V GS +12V Drain Current (continuous)漏極電流-連續I D 5A Drain Current (pulsed)漏極電流-脉冲I DM 18A Total Device Dissipation 總耗散功率T A =25℃環境溫度爲25℃P D 1400mW Junction 結溫T J 150℃Storage Temperature 儲存溫度T stg-55to+150℃■DEVICEMARKING 打標DM DM340034003400==B00DM340■ELECTRICAL CHARACTERISTICS 電特性(T A =25℃unless otherwise noted 如無特殊說明，溫度爲25℃)Characteristic 特性參數Symbol 符號Min 最⼩值Typ 典型值Max 最⼤值Unit 單位Drain-Source Breakdown Voltage漏極-源極擊穿電壓(I D =250uA,V GS =0V)BV DSS 30——V Gate Threshold Voltage栅極開启電壓(I D =250uA,V GS =V DS )V GS(th)0.6—2V Diode Forward Voltage Drop内附⼆極管正向壓降(I S =1.25A,V GS =0V)V SD —0.71VZero Gate Voltage Drain Current零栅壓漏極電流(V GS =0V,V DS =30V)I DSS ——1u A Gate Body Leakage栅極漏電流(V GS =+12V,V DS =0V)I GSS ——+100n AStatic Drain-Source On-State Resistance 静态漏源導通電阻(I D =5A,V GS =10V)R DS(ON)—3541mΩStatic Drain-Source On-State Resistance 静态漏源導通電阻(I D =3.5A,V GS =4.5V)R DS(ON)—4045mΩStatic Drain-Source On-State Resistance静态漏源導通電阻(I D =3A,V GS =2.5V)R DS(ON)—5055mΩInput Capacitance 輸⼊電容(V GS =0V,V DS =15V,f=1MHz)C ISS —545—pF Output Capacitance 輸出電容(V GS =0V,V DS =15V,f=1MHz)C OSS —66—pF Turn-ON Time 开启時間(V DS =15V,V GS =10V,R GEN =6Ω)t (on)—9.6—ns Turn-OFF Time 关断時間(V DS =15V,V GS =10V,R GEN =6Ω)t (off)—39—nsPulse Width<300µs;Duty Cycle<2.0%0(AO3400)DM340。

常用MOS管型号参数

场效应管分‎类型号‎简介封装‎DISC‎R ETE‎M OS F‎E T 2N‎7000 ‎60V,0‎.115A‎TO-9‎2 DIS‎C RETE‎MOS ‎F ET 2‎N7002‎60V,‎0.2A ‎S OT-2‎3 DIS‎C RETE‎MOS ‎F ET I‎R F510‎A 100‎V,5.6‎A TO-‎220 D‎I SCRE‎T EMO‎S FET‎IRF5‎20A 1‎00V,9‎.2A T‎O-220‎DISC‎R ETE‎M OS F‎E T IR‎F530A‎100V‎,14A ‎T O-22‎0 DIS‎C RETE‎MOS ‎F ET I‎R F540‎A 100‎V,28A‎TO-2‎20 DI‎S CRET‎EMOS‎FET ‎I RF61‎0A 20‎0V,3.‎3A TO‎-220 ‎D ISCR‎E TEM‎O S FE‎T IRF‎620A ‎200V,‎5A TO‎-220 ‎D ISCR‎E TEM‎O S FE‎T IRF‎630A ‎200V,‎9A TO‎-220 ‎D ISCR‎E TEM‎O S FE‎T IRF‎634A ‎250V,‎8.1A ‎T O-22‎0 DIS‎C RETE‎MOS ‎F ET I‎R F640‎A 200‎V,18A‎TO-2‎20 DI‎S CRET‎EMOS‎FET ‎I RF64‎4A 25‎0V,14‎A TO-‎220 D‎I SCRE‎T EMO‎S FET‎IRF6‎50A 2‎00V,2‎8A TO‎-220 ‎D ISCR‎E TEM‎O S FE‎T IRF‎654A ‎250V,‎21A T‎O-220‎DISC‎R ETE‎M OS F‎E T IR‎F720A‎400V‎,3.3A‎TO-2‎20 DI‎S CRET‎EMOS‎FET ‎I RF73‎0A 40‎0V,5.‎5A TO‎-220 ‎D ISCR‎E TEM‎O S FE‎T IRF‎740A ‎400V,‎10A T‎O-220‎DISC‎R ETE‎M OS F‎E T IR‎F750A‎400V‎,15A ‎T O-22‎0 DIS‎C RETE‎MOS ‎F ET I‎R F820‎A 500‎V,2.5‎A TO-‎220 D‎I SCRE‎T EMO‎S FET‎IRF8‎30A 5‎00V,4‎.5A T‎O-220‎DISC‎R ETE‎M OS F‎E T IR‎F840A‎500V‎,8A T‎O-220‎DISC‎R ETE‎M OS F‎E T IR‎F9520‎-100‎V,-6A‎TO-2‎20 DI‎S CRET‎EDISC‎R ETE‎M OS F‎E T IR‎F9610‎-200‎V,-1.‎8A TO‎-220 ‎D ISCR‎E TEM‎O S FE‎T IRF‎9620 ‎-200V‎,-3.5‎A TO-‎220 D‎I SCRE‎T EMO‎S FET‎IRFP‎150A ‎100V,‎43A T‎O-3P‎D ISCR‎E TEM‎O S FE‎T IRF‎P250A‎200V‎,32A ‎T O-3P‎DISC‎R ETE‎M OS F‎E T IR‎F P450‎A 500‎V,14A‎TO-3‎P DIS‎C RETE‎MOS ‎F ET I‎R FR02‎4A 60‎V,15A‎D-PA‎K DIS‎C RETE‎MOS ‎F ET I‎R FR12‎0A 10‎0V,8.‎4A D-‎P AK D‎I SCRE‎T EMO‎S FET‎IRFR‎214A ‎250V,‎2.2A ‎D-PAK‎DISC‎R ETE‎M OS F‎E T IR‎F R220‎A 200‎V,4.6‎A D-P‎A K DI‎S CRET‎EMOS‎FET ‎I RFR2‎24A 2‎50V,3‎.8A D‎-PAK ‎D ISCR‎E TEM‎O S FE‎T IRF‎R310A‎400V‎,1.7A‎D-PA‎K DIS‎C RETE‎MOS ‎F ET I‎R FR90‎20 -5‎0V,-9‎.9A D‎-PAK ‎D ISCR‎E TEM‎O S FE‎T IRF‎S540A‎100V‎,17A ‎T O-22‎0F DI‎S CRET‎EMOS‎FET ‎I RFS6‎30A 2‎00V,6‎.5A T‎O-220‎F DIS‎C RETE‎MOS ‎F ET I‎R FS63‎4A 25‎0V,5.‎8A TO‎-220F‎DISC‎R ETE‎M OS F‎E T IR‎F S640‎A 200‎V,9.8‎A TO-‎220F ‎D ISCR‎E TEM‎O S FE‎T IRF‎S644A‎250V‎,7.9A‎TO-2‎20F D‎I SCRE‎T EMO‎S FET‎IRFS‎730A ‎400V,‎3.9A ‎T O-22‎0F DI‎S CRET‎EMOS‎FET ‎I RFS7‎40A 4‎00V,5‎.7A T‎O-220‎F DIS‎C RETE‎MOS ‎F ET I‎R FS83‎0A 50‎0V,3.‎1A TO‎-220F‎DISC‎R ETE‎M OS F‎E T IR‎F S840‎A 500‎V,4.6‎A TO-‎220F ‎D ISCR‎E TEM‎O S FE‎T IRF‎S9Z34‎-60V‎,-12A‎TO-2‎20F D‎I SCRE‎T EDISC‎R ETE‎M OS F‎E T IR‎F SZ34‎A 60V‎,20A ‎T O-22‎0FDI‎S CRET‎EMOS‎FET ‎I RFU1‎10A 1‎00V,4‎.7A I‎-PAK‎D ISCR‎E TEM‎O S FE‎T IRF‎U120A‎100V‎,8.4A‎I-PA‎KDIS‎C RETE‎MOS ‎F ET I‎R FU22‎0A 20‎0V,4.‎6A I-‎P AKD‎I SCRE‎T EMO‎S FET‎IRFU‎230A ‎200V,‎7.5A ‎I-PAK‎DISC‎R ETE‎M OS F‎E T IR‎F U410‎A 500‎V ,1.‎2A I-‎P AKD‎I SCRE‎T EMO‎S FET‎IRFU‎420A ‎500V,‎2.3A ‎I-PAK‎DISC‎R ETE‎M OS F‎E T IR‎F Z20A‎50V,‎15A T‎O-220‎DISC‎R ETE‎M OS F‎E T IR‎F Z24A‎60V,‎17A T‎O-220‎DISC‎R ETE‎M OS F‎E T IR‎F Z30 ‎50V,3‎0A TO‎-220‎D ISCR‎E TEM‎O S FE‎T IRF‎Z34A ‎60V,3‎0A TO‎-220‎D ISCR‎E TEM‎O S FE‎T IRF‎Z40 5‎0V,50‎A TO-‎220D‎I SCRE‎T EMO‎S FET‎IRFZ‎44A 6‎0V,50‎A TO-‎220D‎I SCRE‎T EMO‎S FET‎IRLS‎530A ‎100V,‎10.7A‎,Logi‎c TO-‎220F ‎D ISCR‎E TEM‎O S FE‎T IRL‎S Z14A‎60V,‎8A,Lo‎g ic T‎O-220‎F DIS‎C RETE‎MOS ‎F ET I‎R LZ24‎A 60V‎,17A,‎L ogic‎TO-2‎20DI‎S CRET‎EMOS‎FET ‎I RLZ4‎4A 60‎V,50A‎,Logi‎c TO-‎220D‎I SCRE‎T EMO‎S FET‎SFP3‎6N03 ‎30V,3‎6A TO‎-220‎D ISCR‎E TEM‎O S FE‎T SFP‎65N06‎60V,‎65A T‎O-220‎DISC‎R ETE‎M OS F‎E T SF‎P9540‎-100‎V,-17‎A TO-‎220D‎I SCRE‎T EMO‎S FET‎SFP9‎634 -‎250V,‎-5A T‎O-220‎DISC‎R ETE‎M OS F‎E T SF‎P9644‎-250‎V,-8.‎6A TO‎-220‎D ISCR‎E TEDIS‎C RETE‎MOS ‎F ET S‎F R921‎4 -25‎0V,-1‎.53A ‎D-PAK‎DISC‎R ETE‎M OS F‎E T SF‎R9224‎-250‎V,-2.‎5A D-‎P AK D‎I SCRE‎T EMO‎S FET‎SFR9‎310 -‎400V,‎-1.5A‎D-PA‎K DIS‎C RETE‎MOS ‎F ET S‎F S963‎0 -20‎0V,-4‎.4A T‎O-220‎F DIS‎C RETE‎MOS ‎F ET S‎F S963‎4 -25‎0V,-3‎.4A T‎O-220‎F DIS‎C RETE‎MOS ‎F ET S‎F U922‎0 -20‎0V,-3‎.1A I‎-PAK‎D ISCR‎E TEM‎O S FE‎T SSD‎2002 ‎25V N‎/P Du‎a l 8S‎O P DI‎S CRET‎EMOS‎FET ‎S SD20‎19 20‎V P-c‎h Dua‎l 8SO‎P DIS‎C RETE‎MOS ‎F ET S‎S D210‎1 30V‎N-ch‎Sing‎l e 8S‎O P DI‎S CRET‎EMOS‎FET ‎S SH10‎N80A ‎800V,‎10A T‎O-3P ‎D ISCR‎E TEM‎O S FE‎T SSH‎10N90‎A 900‎V,10A‎TO-3‎P DIS‎C RETE‎MOS ‎F ET S‎S H5N9‎0A 90‎0V,5A‎TO-3‎P DIS‎C RETE‎MOS ‎F ET S‎S H60N‎10 10‎0V,60‎A TO-‎3PDI‎S CRET‎EMOS‎FET ‎S SH6N‎80A 8‎00V,6‎A TO-‎3PDI‎S CRET‎EMOS‎FET ‎S SH70‎N10A ‎100V,‎70A T‎O-3P ‎D ISCR‎E TEM‎O S FE‎T SSH‎7N90A‎900V‎,7A T‎O-3P‎D ISCR‎E TEM‎O S FE‎T SSH‎9N80A‎800V‎,9A T‎O-3P‎D ISCR‎E TEM‎O S FE‎T SSP‎10N60‎A 600‎V,9A ‎T O-22‎0 DIS‎C RETE‎MOS ‎F ET S‎S P1N6‎0A 60‎0V,1A‎TO-2‎20DI‎S CRET‎EMOS‎FET ‎S SP2N‎90A 9‎00V,2‎A TO-‎220D‎I SCRE‎T EMO‎S FET‎SSP3‎5N03 ‎30V,3‎5A TO‎-220‎D ISCR‎E TEM‎O S FE‎T SSP‎3N90A‎900V‎,3A T‎O-220‎DISC‎R ETEDIS‎C RETE‎MOS ‎F ET S‎S P4N6‎0AS 6‎00V,4‎A TO-‎220D‎I SCRE‎T EMO‎S FET‎SSP4‎N90AS‎900V‎,4.5A‎TO-2‎20 DI‎S CRET‎EMOS‎FET ‎S SP5N‎90A 9‎00V,5‎A TO-‎220D‎I SCRE‎T EMO‎S FET‎SSP6‎0N06 ‎60V,6‎0A TO‎-220‎D ISCR‎E TEM‎O S FE‎T SSP‎6N60A‎600V‎,6A T‎O-220‎DISC‎R ETE‎M OS F‎E T SS‎P70N1‎0A 10‎0V,55‎A TO-‎220D‎I SCRE‎T EMO‎S FET‎SSP7‎N60A ‎600V,‎7A TO‎-220‎D ISCR‎E TEM‎O S FE‎T SSP‎7N80A‎800V‎,7A T‎O-220‎DISC‎R ETE‎M OS F‎E T SS‎P80N0‎6A 60‎V,80A‎TO-2‎20DI‎S CRET‎EMOS‎FET ‎S SR1N‎60A 6‎00V,0‎.9A D‎-PAK‎D ISCR‎E TEM‎O S FE‎T SSR‎2N60A‎600V‎,1.8A‎D-PA‎K DIS‎C RETE‎MOS ‎F ET S‎S R305‎5A 60‎V,8A ‎D-PAK‎DISC‎R ETE‎M OS F‎E T SS‎S10N6‎0A 60‎0V,5.‎1A TO‎-220F‎DISC‎R ETE‎M OS F‎E T SS‎S2N60‎A 600‎V,1.3‎A TO-‎220F ‎D ISCR‎E TEM‎O S FE‎T SSS‎3N80A‎800V‎,2A T‎O-220‎F DIS‎C RETE‎MOS ‎F ET S‎S S3N9‎0A 90‎0V,2A‎TO-2‎20FD‎I SCRE‎T EMO‎S FET‎SSS4‎N60AS‎600V‎,2.3A‎TO-2‎20F D‎I SCRE‎T EMO‎S FET‎SSS4‎N90AS‎900V‎,2.8A‎TO-2‎20F D‎I SCRE‎T EMO‎S FET‎SSS5‎N80A ‎800V,‎3A TO‎-220F‎DISC‎R ETE‎M OS F‎E T SS‎S6N60‎600V‎, 3.2‎A TO-‎220(F‎/P) ‎。

华之美半导体MOS管型号选型指南

型号 HM2301/A HM2301B HM2301C HM2301D HM2301E HM2301DR HM2301KR HM2301BKR /BSR/BJR
沟道 P沟道 P沟道 P沟道 P沟道 P沟道 P沟道 P沟道
VGS -10V -12V -12V -6V -12V -6V -10V
IDM -10A -10A -10A -4A -7A -4A -6A
60V 60V 100V 100V 100V 100V 150V 200V 150V
20V 20V 20V 20V 20V 20V 20V 20V 20V
3V 3V 2V 2V 1.8V 1.4V 3.2V 3.0V 2.0V
单P沟道低压MOS场效应管 VDS (Max) -20V -20V -12V -20V -12V -20V -20V VTH (Typ) -0.65V -0.7V -0.7V -0.45V -0.7V -0.45V -0.65V ID (Max) -3A -2.8A -2.8A -0.8A -2A -0.8A -3A RDS(on) (Max) 65mΩ 83mΩ 85mΩ 350mΩ 95mΩ 350mΩ 65mΩ
-0.45V -0.7V -0.7V -0.65V
-0.8A -4.1A -4.0A -6A -4.2A -4.2A -2.5A -4.6A -5.2A
-1.6A -15A -15A -20A -30A -30A -10A -32A -30A
350mΩ 39mΩ 40mΩ 30mΩ 50mΩ 50mΩ 72mΩ 50mΩ 50mΩ
双P沟道双P沟道双P沟道双P沟道双P沟道双P沟道 P沟道双P沟道双P沟道双P沟道双P沟道双P沟道
-20V -30V -30V -30V -40V -40V -40V -55V -60V -100V -30V -20V

AO3407A场效应MOS管原厂DCY品牌推荐

AO3407A30V P-Channel MOSFETGeneral DescriptionThe AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.Product SummaryVDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -4.3A < 48mΩ < 78mΩSOT23 Top View Bottom ViewDDDS G SGG SAbsolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTGMaximum -30 ±20 -4.3 -3.5 -25 1.4 0.9 -55 to 150Units V V AW ° CSymbolt ≤ 10s Steady-State Steady-StateRθJA RθJLTyp 70 100 63Max 90 125 80Units ° C/W ° C/W ° C/WRev 5: Nov 2011Page 1 of 5AO3407AC unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4.3A IS=-1A,VGS=0V C TJ=125° -1.4 -25 34 52 54 10 -0.7 -1 -2 520 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3.5 100 65 7.5 9.2 VGS=-10V, VDS=-15V, ID=-4.3A 4.6 1.6 2.2 7.5 VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=3Ω IF=-4.3A, dI/dt=100A/µs 5.5 19 7 11 5.3 11.5 11 6 48 68 78 -1.9 Min -30 -1 -5 ±100 -2.4 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nCSTATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain currentMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistanceSWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µsA. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Rev 5: Nov 2011Page 2 of 5AO3407ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS30 25 -10V 20 -ID (A) 15 -4V 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 Normalized On-Resistance 70 60 RDS(ON) (mΩ ) 50 40 30 20 10 0 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 4 VGS=-10V VGS=-4.5V VGS=-3.5V 10 5 0 0.5 1.5 2.5 3.5 4.5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125°C 25°C -4.5V 20 -ID(A) 15 -6V 25 30 VDS=-5V1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 VGS=-10V ID=-4.3AVGS ID=-3A17 5 2 10 =-4.5V0 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)120 ID=-4.3A 100 RDS(ON) (mΩ )1.0E+02 1.0E+01 1.0E+00 -IS (A)4080 125°C 60125°C 1.0E-01 1.0E-02 1.0E-0325°C4025°C1.0E-04 1.0E-0520 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2 40.00.20.40.60.81.01.2-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)Rev 5: Nov 2011Page 3 of 5AO3407ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS10 VDS=-15V ID=-4.3A 600 6 Capacitance (pF) -VGS (Volts) Ciss 80084004Coss 2002 Crss 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 300 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 100100.040 TA=25°C10.010µsPower (W)30ID (Amps)RDS(ON) limited1.0100µs 1ms 10ms 10ms200.1TJ(Max)=150°C TA=25°C10s DC100.0 0.01 0.1 1 VDS (Volts) 10 1000 0.0001 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 0.01Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=125°C/WIn descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) PD Ton T TRev 5: Nov 2011Page 4 of 5AO3407AGate Charge Test Circuit & WaveformVgs Qg -10VVDCVDCDUT Vgs IgResistive Switching Test Circuit & WaveformsRL Vds Vgs Vgs Rg DUTVDCVgs VdsDiode Recovery Test Circuit & WaveformsVds + DUT Vgst rrVds Isd Vgs IgLVDC+ Vdd -VdsRev 5: Nov 2011+Chargeton td(on) tr t d(off) toff tf+--+-VdsQgsQgdVdd90%10%Q rr = - Idt-Isd-I FdI/dt -I RM VddPage 5 of 5。

常用MOS管型号大全

GSD
高频低噪放大
20V0.5-8mA0.25W100MHz3dB
2SK214
NMOS
GSD
高频高速开关
160V0.5A30W
2SK241
NMOS
DSG
高频放大
-20V0.03A0.2W100MHz1.7dB
2SK304
NJ
GSD
音频功放
30V0.6-12mA0.15W
2SK385
NMOS
GDS
高速开关
J177
PMOS
2SJ177
PMOS
GDS
激励(无)
-60V20A35W140/580nS0.085
J201
PMOS
GDS
高频放大
10V0.4A1.3W8GHZ
2SJ312
PMOS
GDS
激励
60V14A40W30/120nS0.12
2SK30
NJ
SDG
低放音频
-50V0.5mA0.1W0.5dB
2SK30A
NMOS
GDS
高速开关
500V15A100W0.4
2SK623
NMOS
GDS
高速开关
250V20A120W0.15
2SK727
NMOS
GDS
电源开关
-900V5A125W110/420nS2.5
2SK734
NMOS
GDS
电源开关
450V15A150W160/250nS0.52
2SK785
NMOS
GDS
2SK2487
NMOS
GDS
监视器用电源
900V8A140W 50/153nS1.1

MOSFET品牌大集结

MOSFET品牌大集结MOSFET（金属氧化物半导体场效应晶体管）是一种常用的半导体器件，广泛应用于电子设备中的功率放大、开关和调节电路中。

在市场上，有许多不同品牌的MOSFET可供选择，每个品牌都有其独特的特点和优势。

本文将为您介绍一些知名的MOSFET品牌及其特点，以帮助您在选购时做出明智的决策。

1. Infineon Technologies（英飞凌科技）Infineon Technologies是一家全球领先的半导体解决方案提供商，其MOSFET 产品以其高性能和可靠性而闻名。

该品牌的MOSFET具有低导通电阻、高开关速度和低漏电流等优点，适用于高功率应用，如电源管理和电动汽车。

2. STMicroelectronics（意法半导体）STMicroelectronics是一家国际领先的半导体制造商，其MOSFET产品具有良好的性能和可靠性。

该品牌的MOSFET采用先进的封装技术和优化的设计，能够在高温和高电压环境下工作稳定，适用于工业自动化和电力应用。

3. ON Semiconductor（安森美半导体）ON Semiconductor是一家全球领先的半导体解决方案供应商，其MOSFET产品以其高效能和低功耗而受到市场的青睐。

该品牌的MOSFET具有低导通电阻、高开关速度和低漏电流等特点，适用于电源管理、电池管理和无线通信等领域。

4. Toshiba（东芝）Toshiba是一家知名的日本半导体制造商，其MOSFET产品以其高品质和可靠性而备受推崇。

该品牌的MOSFET具有低导通电阻、高温稳定性和低漏电流等优点，适用于电源管理、消费电子和通信设备等领域。

5. Vishay（威世）Vishay是一家全球领先的半导体和电子元件制造商，其MOSFET产品以其卓越的性能和可靠性而广受好评。

该品牌的MOSFET具有低导通电阻、高开关速度和低漏电流等特点，适用于工业控制、汽车电子和医疗设备等应用。

除了以上提到的品牌，市场上还有许多其他可靠的MOSFET品牌，如Fairchild Semiconductor、NXP Semiconductors、Rohm Semiconductor等。

AO4409(MOS场效应管)原厂DCY品牌推荐

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
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AO4409

945
pF
745
pF
2
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
100 120 nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-15A
51.5
nC
14.5
On state drain current
VGS=-10V, VDS=-5V
-80
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-15A
TJ=125°C
6.2 7.5 mΩ
8.2 11.5
VGS=-4.5V, ID=-10A
9.5 12 mΩ
RθJA
31 59
Maximum Junction-to-Lead
Steady-State
RθJL
16
Max 40 75 24
Units V V
A
A mJ W °C
Units °C/W °C/W °C/W
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AO4409

Electrical Characteristics (TJ=25°C unless otherwise noted)

SI2301DS场效应管原厂DCY品牌推荐

DMS2301AL / SI2301DS
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic 特性參數
Symbol Min 符號最小值
Typ 典型值
Max 最大值
Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID = -250uA,VGS=0V)
t(off)
—
60
—
Unit 單位
V V V uA nA
mΩ mΩ
pF pF ns ns
Pulse Width<300μs; Duty Cycle<2.0%
(VGS=0V, VDS= -16V, TA=55℃)
IDSS
—
—
-1
-10
Gate Body Leakage 栅極漏電流(VGS=+8V, VDS=0V)
IGSS
—
—
+100
Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -2.4A,VGS= -4.5V)
Output Capacitance 輸出電容 (VGS=0V, VDS= -10V,f=1MHz)
COSS
—
120
—
Turn-ON Time 开启時間 (VDS= -10V, ID= -2.4A, RGEN=6Ω)
t(on)
—
8
—
Turn-OFF Time 关断時間 (VDS= -10V, ID= -2.4A, RGEN=6Ω)

DME12N04场效应管MOS工厂DCY品牌推荐

The DME12N04 is the N-Channel logic enhancement mode powerN- Channel 40-V (D-S) MOSFETGENERAL DESCRIPTIONfield effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.FEATURES● 40V/12A,R DS(ON)=25m Ω@V GS =10V (N-Ch) ● 40V/6A,R DS(ON)=52m Ω@V GS =4.5V (N-Ch)● Super high density cell design for extremely low R DS(ON) ● Exceptional on-resistance and maximum DC current capabilityAPPLICATIONS● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverterPIN CONFIGURATION(TO-252) Top ViewAbsolute Maximum Ratings (T A =25℃ Unless Otherwise Noted)Parameter Symbol Maximum UnitDrain-Source VoltageV DSS 40 VGate-Source Voltage V GSS ±25 V T A =25℃ 12Continuous DrainCurrent(tJ=150℃) T A =70℃ I D9.6APulsed Drain Current I DM 30 AContinuous Source Current (Diode Conduction) I S 12 A Avalanche Energy with Single Pulse(L=0.1mH) EAS 20 mJ T A =25℃ 2.0 Maximum Power DissipationT A =70℃ P D 1.3 W Operating Junction Temperature T J -55 to 150℃ T≦10 sec 20 Thermal Resistance-Junction to Ambient*R θJASteady State48℃/WThermal Resistance-Junction to CaseR θJC 27℃/W *The device mounted on 1in 2 FR4 board with 2 oz copperME12N04ME12N04N- Channel 40-V (D-S) MOSFETElectrical Characteristics (T A =25℃ Unless Otherwise Specified)Symbol ParameterLimitMin Typ MaxUnitSTATIC V (BR)DSSDrain-Source Breakdown VoltageV GS =0V, I D =250μA N-Ch 40 V V GS(th) Gate Threshold Voltage V DS =V GS , I D =250μAN-Ch1 1.9 3 VI GSSGate Leakage CurrentV DS =0V, V GS =±25V N-Ch ±100 nA V DS =40V, V GS =0V N-Ch1I DSS Zero Gate Voltage Drain CurrentV DS =40V, V GS =0V,T J =55℃N-Ch 10 μAI D(ON) On-State Drain Current aV D S ≧5V, V GS = 10V N-Ch 30 A V GS =10V, I D = 12AN-Ch 18 25R DS(ON) Drain-Source On-State ResistanceV GS =4.5V, I D = 6AN-Ch4052m ΩV SD Diode Forward Voltage I S =1.7A, V GS =0V N-Ch0.78 1.2 VDYNAMIC QgTotal Gate ChargeN-Ch 8.5 10 Qgs Gate-Source Charge N-Ch 3 Qgd Gate-Drain Charge N-ChannelV DS =20V, V GS =4.5V, I D =6AN-Ch2.5 nC Rg Gate Resistance V GS =0V, V DS =0V, f=1MH ZN-Ch 2.7 Ω Ciss Input capacitance N-Ch550 650 Coss Output CapacitanceN-Ch P-Ch 80 Crss Reverse Transfer CapacitanceN-ChannelV DS =20V, V GS =0V, F=1MHzN-Ch 21 pF t d(on) Turn-On Delay Time N-Ch11 14 t r Turn-On Rise Time N-ChP-Ch7.5 9 t d(off) Turn-Off Delay Time N-Ch35 45 t fTurn-On Fall TimeN-ChannelV DD =15V, R L =15ΩI D =1A, V GEN =10V, R G =6Ω N-Ch3.5 5ns Notes:a. Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%N- Channel 40-V (D-S) MOSFETTypical Characteristics (T J =25℃ Noted) N-CHANNELME12N04N- Channel 40-V (D-S) MOSFET Typical Characteristics (T J =25℃ Noted) N-CHANNELME12N04N- Channel 40-V (D-S) MOSFETTO-252 Package OutlineME12N04。

MOSFET品牌大集结

MOSFET品牌大集结引言概述：MOSFET（金属氧化物半导体场效应晶体管）是一种常用的半导体器件，广泛应用于电子设备中的功率开关和放大电路中。

随着市场需求的不断增长，各个品牌的MOSFET产品也在不断涌现。

本文将为大家介绍一些知名的MOSFET品牌，帮助大家更好地了解市场上的选择。

一、Infineon1.1 Infineon是一家德国半导体公司，拥有丰富的MOSFET产品线，涵盖了各种功率等级和封装形式。

1.2 Infineon的MOSFET产品具有优良的性能和稳定的质量，广泛应用于汽车电子、工业控制和消费电子等领域。

1.3 Infineon的MOSFET产品在市场上享有很高的声誉，深受客户信赖。

二、STMicroelectronics2.1 STMicroelectronics是一家总部位于瑞士的半导体公司，也是全球领先的MOSFET供应商之一。

2.2 STMicroelectronics的MOSFET产品具有高效率、低功耗和高可靠性的特点，适用于各种应用场景。

2.3 STMicroelectronics不断推出新品，满足客户不断增长的需求，在市场上具有很强的竞争力。

三、Vishay3.1 Vishay是一家美国半导体公司，拥有丰富的MOSFET产品系列，覆盖了各种功率等级和封装形式。

3.2 Vishay的MOSFET产品具有高性能、高可靠性和良好的稳定性，被广泛应用于通信、工业和汽车电子等领域。

3.3 Vishay致力于不断提升产品质量和技术水平，赢得了客户的信赖和好评。

四、Fairchild Semiconductor4.1 Fairchild Semiconductor是一家美国半导体公司，也是MOSFET领域的知名品牌之一。

4.2 Fairchild Semiconductor的MOSFET产品具有优良的性能和稳定的质量，广泛应用于电源管理、汽车电子和消费电子等领域。

4.3 Fairchild Semiconductor不断推出创新产品，满足客户不断变化的需求，赢得了广泛的市场认可。

常用全系列场效应管MOS管型号参数封装资(精)

场效应管分类型号简介封装 DISCRETEMOS FET 2N7000 60V,0.115A TO-92 DISCRETE MOS FET 2N7002 60V,0.2A SOT-23 DISCRETE MOS FET IRF510A 100V,5.6A TO-220 DISCRETE MOS FET IRF520A 100V,9.2A TO-220 DISCRETE MOS FET IRF530A 100V,14A TO-220 DISCRETE MOS FET IRF540A 100V,28A TO-220 DISCRETE MOS FET IRF610A 200V,3.3A TO-220 DISCRETE MOS FET IRF620A 200V,5A TO-220 DISCRETE MOS FET IRF630A 200V,9A TO-220 DISCRETE MOS FET IRF634A 250V,8.1A TO-220 DISCRETE MOS FET IRF640A 200V,18A TO-220 DISCRETE MOS FET IRF644A 250V,14A TO-220 DISCRETE MOS FET IRF650A 200V,28A TO-220 DISCRETE MOS FET IRF654A 250V,21A TO-220 DISCRETE MOS FET IRF720A 400V,3.3A TO-220 DISCRETE MOS FET IRF730A 400V,5.5A TO-220 DISCRETE MOS FET IRF740A 400V,10A TO-220MOS FET IRF750A 400V,15A TO-220 DISCRETEMOS FET IRF820A 500V,2.5A TO-220 DISCRETE MOS FET IRF830A 500V,4.5A TO-220 DISCRETE MOS FET IRF840A 500V,8A TO-220 DISCRETE MOS FET IRF9520 TO-220 DISCRETEMOS FET IRF9540 TO-220 DISCRETEMOS FET IRF9610 TO-220 DISCRETEMOS FET IRF9620 TO-220 IRF610 200V 3.3A 43W IRF820 500V 2.5A 50WIRF830 500V 4.5A 45WIRF840 500V 8A 125WIRF9620 200V 2A 40WIRFBC40R 600V 6.2A 125W IRFBC30 600V 3.6A 74W IRFPF50 900V 6.8A 150WIRFP450 500V 14A 180WDISCRETEMOS FET IRFP150A 100V,43A TO-3P DISCRETE MOS FET IRFP250A 200V,32A TO-3P DISCRETE MOS FET IRFP450A 500V,14A TO-3P DISCRETE MOS FET IRFR024A 60V,15A D-PAK DISCRETEMOS FET IRFR120A 100V,8.4A D-PAKMOS FET IRFR214A 250V,2.2A D-PAK DISCRETE MOS FET IRFR220A 200V,4.6A D-PAK DISCRETE MOS FET IRFR224A 250V,3.8A D-PAK DISCRETE MOS FET IRFR310A 400V,1.7A D-PAK DISCRETE MOS FET IRFR9020TF D-PAK DISCRETEMOS FET IRFS540A 100V,17A TO-220F DISCRETE MOS FET IRFS630A 200V,6.5A TO-220F DISCRETE MOS FET IRFS634A 250V,5.8A TO-220F DISCRETE MOS FET IRFS640A 200V,9.8A TO-220F DISCRETE MOS FET IRFS644A 250V,7.9A TO-220F DISCRETE MOS FET IRFS730A 400V,3.9A TO-220F DISCRETE MOS FET IRFS740A 400V,5.7A TO-220F DISCRETE MOS FET IRFS830A 500V,3.1A TO-220F DISCRETE MOS FET IRFS840A 500V,4.6A TO-220F DISCRETE MOS FET IRFS9Z34 -60V,12A TO-220F DISCRETE MOS FET IRFSZ24A 60V,14A TO-220F DISCRETE MOS FET IRFSZ34A 60V,20A TO-220FMOS FET IRFU110A 100V,4.7A I-PAK DISCRETEMOS FET IRFU120A 100V,8.4A I-PAK DISCRETEMOS FET IRFU220A 200V,4.6A I-PAK DISCRETEMOS FET IRFU230A 200V,7.5A I-PAK DISCRETEMOS FET IRFU410A 500V I-PAK DISCRETEMOS FET IRFU420A 500V,2.3A I-PAK DISCRETEMOS FET IRFZ20A TO-220DISCRETEMOS FET IRFZ24A 60V,17A TO-220 DISCRETEMOS FET IRFZ30 TO-220DISCRETEMOS FET IRFZ34A 60V,30A TO-220 DISCRETEMOS FET IRFZ40 TO-220DISCRETEMOS FET IRFZ44A 60V,50A TO-220 DISCRETEMOS FET IRLS530A 100V,10.7A,Logic TO-220F DISCRETE MOS FET IRLSZ14A 60V,8A,Logic TO-220F DISCRETE MOS FET IRLZ24A 60V,17A,Logic TO-220 DISCRETE MOS FET IRLZ44A 60V,50A,Logic TO-220 DISCRETE MOS FET SFP36N03 30V,36A TO-220MOS FET SFP65N06 60V,65A TO-220 DISCRETEMOS FET SFP9540 -100V,17A TO-220 DISCRETEMOS FET SFP9634 -250V,5A TO-220 DISCRETEMOS FET SFP9644 -250V,8.6A TO-220 DISCRETEMOS FET SFP9Z34 -60V,18A TO-220 DISCRETEMOS FET SFR9214 -250V,1.53A D-PAK DISCRETEMOS FET SFR9224 -250V,2.5A D-PAK DISCRETEMOS FET SFR9310 -400V,1.5A D-PAK DISCRETEMOS FET SFS9630 -200V,4.4A TO-220F DISCRETEMOS FET SFS9634 -250V,3.4A TO-220F DISCRETEMOS FET SFU9220 -200V,3.1A I-PAK DISCRETEMOS FET SSD2002 25V N/P Dual 8SOP DISCRETEMOS FET SSD2019 20V P-ch Dual 8SOP DISCRETEMOS FET SSD2101 30V N-ch Single 8SOP DISCRETEMOS FET SSH10N80A 800V,10A TO-3P DISCRETEMOS FET SSH10N90A 900V,10A TO-3P DISCRETEMOS FET SSH5N90A 900V,5A TO-3PDISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FETDISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET SSP70N10A 100V,55A TO-220 SSP6N60A 600V,6A TO-220 SSP60N06 60V,60A TO-220 SSP5N90A 900V,5A TO-220 SSP4N90AS 900V,4.5A TO-220 SSP4N60AS 600V,4A TO-220 SSP4N60A 600V,4A TO-220 SSP3N90A 900V,3A TO-220 SSP35N03 30V,35A TO-220SSP2N90A 900V,2A TO-220 SSP1N60A 600V,1A TO-220 SSP10N60A 600V,9A TO-220 SSH9N80A 800V,9A TO-3P SSH7N90A 900V,7A TO-3P SSH70N10A 100V,70A TO-3P SSH6N80A 800V,6A TO-3P SSH60N10 TO-3PDISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET DISCRETE MOS FET 2SK105 2SK161 2SK192 SSS6N60A 600V, 50V 18V 18V 0.01A 0.25W 0.1A 0.2W 0.1A 0.2W TO-220(F/P SSS5N80A 800V,3A TO-220F SSS4N90AS 900V,2.8A TO-220F SSS4N60AS 600V,2.3A TO-220F SSS4N60AS600V,2.3A TO-220(F/P SSS4N60A 600V,3.5A TO-220(F/P SSS3N90A 900V,2A TO-220F SSS3N80A 800V,2A TO-220F SSS2N60A 600V,1.3A TO-220F SSS10N60A 600V,5.1A TO-220F SSR3055A 60V,8A D-PAK SSR2N60A 600V,1.8A D-PAKSSR1N60A 600V,0.9A D-PAK SSP80N06A 60V,80A TO-220 SSP7N80A 800V,7A TO-220 SSP7N60A 600V,7A TO-2202SK413 2SK418 2SK544 2SK659 2SK701 2SK940 2SK1117 2SK1198 2SK1270 140V 8A 140V 8A 20V 60V 60V 60V 600V 700V 60V 100W 100W 0.02A 0.03W 12A 2A 35W 15W 0.8A 0.9W 6A 2A 2A 100W 35W 10W 75W 83W BUK453. 100A 100V 22A BUK455. 60A 60V 38A IRFBG20，IRFBG30，IRFPG50 IRFPG40 1000V。