DG445DJ+中文资料
445中文资料
Previous Page | Return to Index | Next PageMIL-TYPE 1/4" PHONE PLUGS1. 2-CONDUCTOR SERIES 420, 4252. 3-CONDUCTOR SERIES 482, 4833. 2-CONDUCTOR SERIES 4304. 3-CONDUCTOR SERIES 480 (.206")5. 2-CONDUCTOR SERIES 440, 4456. 3-CONDUCTOR SERIES 484 (.206")click here to download a schematic drawing(you will need to have Adobe Acrobat installed on your system to do this)FEATURESDesigned for high quality communication equipment to meet military requirements, This series features one-piece tip rod and one-piece sleeve and plug body, assembled together into a mold as inserts, providing a finished plug with complete continuity of thermoplastic insulation between tip rod and plug sleeve. Internal (invisible externally) interlock mechanically engages the metal and plastic components providing a realistic lock to prevent parts shifting. Design and material in accordance with MIL-P-642(A), MIL part number molded or stamped on handle, manufacturer's trademark (as required by MIL specification) appears on plug body.SPECIFICATIONSTip Rod, Body and Screws: Copper alloy, natural finish.Terminals: Tinned copper alloy.Insulation: Thermoplastic, per MIL-P-22985, Type II, Class 1.Handles: Thermoplastic, Type 6, per MIL-M-20693, Type II. Shielded; machined from copper alloy, nickel-plated.STRAIN RELIEF CLAMPFor MIL-type Littel-Plug phone plugs. P2380 conforms to Specification SC-A-7674-F - supplied with Plug Numbers 430, 440, 445 and 470. P2381 meets Specification MS-35762 - supplied with Plug Number 480 and Extension-Jax® phone jack, Number 820.Previous Page | Return to Index | Next PageTo search a category please click on the corresponding icon:| Connectors | Jacks and Plugs || Patch Panels, Patch Kits & Jackfields | Cable Assemblies and Patch Cords | Switches | All products shown are covered by Switchcraft's limited lifetime warranty.| Switchcraft home |About Us | Products | What's New | Search | Contact Us。
DG444中文资料
7
D4
Drain (Output) Terminal for Switch 4
8
IN4
Logic Control for Switch 4
9
IN3
Logic Control for Switch 3
10
D3
Drain (Output) Terminal for Switch 3
11
S3
Source (Input) Terminal for Switch 3
Applications
• Audio Switching • Battery Operated Systems • Data Acquisition • Hi-Rel Systems • Sample and Hold Circuits • Communication Systems • Automatic Test Equipment
2
D1
Drain (Output) Terminal for Switch 1
3
S1
Source (Input) Terminal for Switch 1
4
V-
Negative Power Supply Terminal
5
GND Ground Terminal (Logic Common)
6
S4
Source (Input) Terminal for Switch 4
115
Maximum Junction Temperature (Plastic Packages) . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
DG445DY-T1中文资料
FEATURESD Low On-Resistance: 50D Low Leakage: 80 pAD Low Power Consumption: 22 nW D Fast Switching Action—tD Low Charge InjectionD DG211/DG212 Upgrades450 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .640 mWexceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings.SPECIFICATIONSParameter Analog SwitchAnalog Signal RangeDrain-Source On-Resistance Dynamic CharacteristicsCrosstak and Off Isolation vs. FrequencyCrosstalkOff IsolationTYPICAL CHARACTERISTICS Switching Time vs. Power Supply Voltaget (n s )16014012080100S V–V+TEST CIRCUITSV SR g = 50 W0V, 2.4 VDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
霍曼卷帘门445R中文说明书
1 1.1 1.2 1.3 1.4 1.5 2 2.1 2.2 2.3 2.4
概述 介绍 .......................................................................... 1-1 版权 .......................................................................... 1-1 保修 .......................................................................... 1-1 操作说明的结构 ........................................................ 1-1 电缆和单股电线的颜色码 .......................................... 1-2 安全 概述 .......................................................................... 2-1 指定应用 ................................................................... 2-1 人身安全 ................................................................... 2-1 安全内容 (根据章节排列)........................................... 2-1
5 操作 5.1 控制箱上的操作/控制器件......................................... 5-1 5.2 7-段显示 ................................................................... 5-2 5.2.1 项目定义............................................................. 5-2 5.2.2 门体位置的显示 .................................................. 5-2 5.2.3 可能出现的操作信息........................................... 5-2 5.2.4 显示 - 操作控制箱上的按钮 ................................ 5-3
DG444DYZ中文资料
Copyright © Intersil Americas Inc. 1999, 2003, 2004, 2006, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
元器件交易网
®
Data Sheet
DG444, DG445
June 4, 2007
FN3586.10
Monolithic, Quad SPST, CMOS Analog Switches
The DG444 and DG445 monolithic CMOS analog switches are drop-in replacements for the popular DG211 and DG212 series devices. They include four independent single pole single throw (SPST) analog switches and TTL and CMOS compatible digital inputs.
DG406中文资料
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Signals on SX, DX, EN or AX exceeding V+ or V- are clamped by internal diodes. Limit diode current to maximum current ratings. 2. θJA is measured with the component mounted on an evaluation PC board in free air.
DG406, DG407
DG407 (PLCC) TOP VIEW
DG407 (PDIP, SOIC) TOP VIEW
V+ 1 DB 2 NC 3 S8B 4 S7B 5 S6B 6 S5B 7 S4B 8 S3B 9 S2B 10 S1B 11 GND 12 NC 13 NC 14
28 DA 27 V-
These multiplexers feature lower signal ON resistance (<100Ω) and faster transition time (tTRANS < 300ns) compared to the DG506A and DG507A. Charge injection has been reduced, simplifying sample and hold applications.
霍曼提升门AB445调试手册中文
章节
0 前视图 内容 A445控制器内视图 B445控制器内视图 连接视图
1 概述 1.1 简介 1.2 版权 1.3 保修 1.4 操作规程的构成 1.5 颜色代码
2 安全 2.1 概述 2.2 应用 2.3 人员安全 2.4 安全劝告条目
3 安装 3.1 概述 3.2 安装
4 4.1 4.2 4.2.1 4.2.2 4.3 4.3.1 4.3.2 4.4 4.4.1 4.4.2
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概述
1.5 电缆和单独电线的颜色码
电缆和电线的颜色编码色
DG442DY中文资料
Pin Descriptions
PIN
SYMBOL
1
IN1
2
D1
3
S1
4
V-
5
GND
6
S4
7
D4
8
IN4
9
IN3
10
D3
11
S3
12
NC
13
V+
14
S2
15
D2
16
IN2
DESCRIPTION Logic Control for Switch 1 Drain (Output) Terminal for Switch 1 Source (Input) Terminal for Switch 1 Negative Power Supply Terminal Ground Terminal (Logic Common) Source (Input) Terminal for Switch 4 Drain (Output) Terminal for Switch 4 Logic Control for Switch 4 Logic Control for Switch 3 Drain (Output) Terminal for Switch 3 Source (Input) Terminal for Switch 3 No Internal Connection Positive Power Supply Terminal (Substrate) Source (Input) Terminal for Switch 2 Drain (Output) Terminal for Switch 2 Logic Control for Switch 2
DG442DVZ (Note)
OPA445AP中文资料
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 Twx: 910-952-1111 • Internet: / • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
UNITS
mV µV/°C µV/V
pA nA pA nA
nV/√Hz fA/√Hz
V dB dB
Ω || pF Ω || pF
dB dB
MHz V/µs kHz ns
% % %
V V mA Ω mA
V V mA
°C °C °C
°C/W °C/W °C/W
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
DG642中文资料
FEATURESD Wide Bandwidth: 500 MHzD Low Crosstalk at 5 MHz: –85 dB D Low r DS(on): 5D TTL Logic CompatibleD Fast Switching: tD Single Supply CompatibilitySPECIFICATIONSParameter Analog SwitchAnalog Signal RangeDrain-Source On-ResistanceCMax b Unit8V889WTYPICAL CHARACTERISTICS 6543210C u r r e n t (m A )Charge Injection vs. V DTEST CIRCUITSS3 VIN3 VGNDV OUTR L75 W R LDocument Number: 70058 S-52433—Rev. E, S FaxBack 408-970-56004-9APPLICATIONS Power SuppliesPower supply flexibility is a useful feature of the DG641/642/643 series. It can be operated from a single positive supply (V+) if required (V– connected to ground). Note that the analog signal must not exceed V– by more than –0.3 V to prevent forward biasing the substrate p-n junction. The use of a V– supply has a number of advantages:1.It allows flexibility in analog signal handling, i.e., with V– =–5 V and V+ = 12 V; up to "5-V ac signals can be controlled.2.The value of on capacitance [C S(on)] may be reduced. Aproperty known as ‘the body-effect’ on the DMOS switch devices causes various parametric effects to occur. One of these effects is the reduction in C S(on) for an increasing V body-source. Note however that to increase V–normally requires V+ to be reduced (since V+ to V– = 21 V max.). A reduction in V+ causes an increase in r DS(on), hence a compromise has to be achieved. It is also useful to note that tests indicate that optimum video linearity performance (e.g., differential phase and gain) occurs when V– is around –3 V.3.V– eliminates the need to bias the analog signal usingpotential dividers and large coupling capacitors. DecouplingIt is an established rf design practice to incorporate sufficient bypass capacitors in the circuit to decouple the power supplies to all active devices in the circuit. The dynamic performance of the DG641/642/643 series is adversely affected by poor decoupling of power supply pins. Also, of even more significance, since the substrate of the device is connected to the negative supply, adequate decoupling of this pin is essential. Suitable decoupling capacitors are 1- to 10-m F tantalum bead, plus 10- to 100-nF ceramic or polyester. Rules:1.Decoupling capacitors should be incorporated on allpower supply pins (V+, V–). (See Figure 7).2.They should be mounted as close as possible to thedevice pins.3.Capacitors should be of a suitable type with good highfrequency characteristics – tantalum bead and/or ceramic disc types are adequate.++–3 VGNDs+15 VDG64XV+V–S1S2S3S4D1D2D3D4C1C2C1C2C1 = 10 m F TantalumC2 = 0.1 m F CeramicFIGURE 7.Supply DecouplingBoard LayoutPCB layout rules for good high frequency performance must also be observed to achieve the performance boasted by these analog switches. Some tips for minimizing stray effects are:e extensive ground planes on double sided PCB,separating adjacent signal paths. Multilayer PCB is even better.2.Keep signal paths as short as practically possible, with allchannel paths of near equal length.3.Careful arrangement of ground connections is also veryimportant. Star connected system grounds eliminate signal current, flowing through ground path parasitic resistance, from coupling between channels.Figure 8 shows a 4-channel video multiplexer using a DG641.In Figure 9, two coax cables terminated on 75 W bring two video signals to the DG642 switch. The two drains tied together lower the on-state capacitance. An Si582 video amplifier drives a double terminated 75-W cable. The double terminated coax cable eliminates line reflections.。
DG425中文资料
DG421/DG423/DG425Improved Low-Power,CMOS Analog Switches with Latches________________________________________________________________Maxim Integrated Products1_________________Pin Configurations__Functional Diagrams/Truth T ablesCall toll free 1-800-998-8800 for free samples or literature.19-0137; Rev 1; 3/94_______________General DescriptionMaxim’s redesigned DG421/DG423/DG425 monolithic analog switches now feature guaranteed on-resistance matching (3Ωmax) between switches and on-resistance flatness over the signal range (4Ωmax). These low on-resistance switches (20Ωtyp) conduct equally well in both directions. They guarantee a low charge injection of 15pC maximum and an ESD tolerance of 2000V minimum per Method 3015.7. Off leakage current over temperature has also been reduced (less than 5nA at +85°C).The DG421/DG423/DG425 are precision, dual CMOS switches with latchable logic inputs that simplify inter-facing with microprocessors (µPs). The single-pole/single-throw DG421 and double-pole/single-throw DG425 are normally open dual switches. The dual, single-pole/double-throw DG423 has two normally open and two normally closed switches. Fast switching times (175ns for t ON and 145ns for t OFF ) and low power consumption (35µW max) make these parts ideal for battery-powered applications requiring µP-compatible switches. Operation is from a single +10V to +30V supply,or bipolar ±4.5V to ±20V supplies. Fabricated with the same 44V silicon-gate process, these switches have rail-to-rail signal handling capabilities._______________________ApplicationsSample-and-Hold Circuits ModemsFax MachinesTest Equipment Battery-Operated SystemsPBX, PABX Guidance and Control Systems Military RadiosAudio Signal RoutingCommunication Systems______________________New Featureso Plug-In Upgrades for Industry-Standard DG421/DG423/DG425o Improved r (DS)ON Match Between Channels (3Ωmax)o Guaranteed r FLAT(ON)Over Signal Range (4Ωmax)o Improved Charge Injection (15pC max)o Improved Off Leakage Current Over Temperature (<5nA at +85°C)o Withstands Electrostatic Discharge (2000V min)per Method 3015.7__________________Existing Featureso Low r DS(ON)(35Ωmax)o Single-Supply Operation +10V to +30V Bipolar-Supply Operation ±4.5V to ±20V o Low Power Consumption (35µW max)o Rail-to-Rail Signal Handling Capability o TTL/CMOS-Logic Compatible______________Ordering Information*Contact factory for dice specifications.**Contact factory for availability and processing to MIL-STD-883B.D G 421/D G 423/D G 425Improved Low-Power,CMOS Analog Switches with LatchesVoltage Referenced to V-V+............................................................44V GND .........................................................25V V L ..................................(GND - 0.3V) to (V+ + 0.3V)Digital Inputs, V S , V D (Note 1)..............(V- - 2V) to (V+ + 2V)Current (any terminal, except S or D).................................30mA Continuous Current, S or D.................................................20mA Peak Current, S or D (pulsed at 1ms, 10% duty cycle max)...100mAContinuous Power Dissipation (T A = +70°C)16-Pin Plastic DIP (derate 10.53mW/°C above +70°C)...842mW 20-Pin PLCC (derate 10.00mW/°C above +70°C).....800mW 16-Pin CERDIP (derate 10.00mW/°C above +70°C) ...800mW Operating Temperature RangesDG42_C_..........................................0°C to +70°C DG42_D_ .......................................-40°C to +85°C DG42_A_ ......................................-55°C to +125°C Storage Temperature RangesDG42_C_/DG42_D_ ...........................-65°C to +125°C DG42_A_ .....................................-65°C to +150°C Lead Temperature (soldering, 10sec)....................+300°CELECTRICAL CHARACTERISTICS(V+ = 15V, V- = -15V, V L = +5V, GND = 0V, V INH = +2.4V, V INL = +0.8V, T A = T MIN to T MAX , unless otherwise noted.)Stresses beyond those listed under "Absolute Maximum Ratings " may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.ABSOLUTE MAXIMUM RATINGSNote 1:Signals on S, D, or IN exceeding V+ or V- are clamped by internal diodes. Limit forward current to maximum current ratings.DG421/DG423/DG425Improved Low-Power,CMOS Analog Switches with Latches_______________________________________________________________________________________3ELECTRICAL CHARACTERISTICS (continued)(V+ = 15V, V- = -15V, V L = +5V, GND = 0V, V= +2.4V, V = +0.8V, T = T to T , unless otherwise noted.)Note 2:Typical values are for design aid only , are not guaranteed, and are not subject to production testing. The algebraic convention,where the most negative value is a minimum and the most positive value a maximum, is used in this data sheet.Note 3:Guaranteed by design.Note 4:On-resistance match between channels and flatness are guaranteed only with bipolar-supply operation. Flatness is defined as the dif-ference between the maximum and minimum value of on-resistance as measured at the extremes of the specified analog signal range.Note 5:Leakage parameters I S(OFF), I D(OFF), and I D(ON)are 100% tested at the maximum rated hot temperature and guaranteed bycorrelation at +25°C.Note 6:Off-Isolation Rejection Ratio = 20log (V D /V S ), V D = output, V S = input to off switch.Note 7:Between any two switches.D G 421/D G 423/D G 425Improved Low-Power,CMOS Analog Switches with Latches 4_______________________________________________________________________________________505520-20ON-RESISTANCE vs. V D (DUAL-SUPPLIES)2545V D (V)r D S (O N ) (Ω)103530-100204015105355-20ON-RESISTANCE vs. V D AND TEMPERATURE (DUAL SUPPLIES)1030V D (V)r D S (O N ) (Ω)202015-101025014020ON-RESISTANCE vs. V D (SINGLE SUPPLY)40120V D (V)r D S (O N ) (Ω)208060515100107010ON-RESISTANCE vs. V D AND TEMPERATURE (SINGLE SUPPLY)2060V D (V)r D S (O N ) (Ω)20403051550101000.0001-75125OFF LEAKAGE CURRENTS vs.TEMPERATURE0.00110TEMPERATURE (°C)O F F L E A K A G E(n A )0.10.012511000.0001-75125ON LEAKAGE CURRENTS vs.TEMPERATURE0.00110TEMPERATURE (°C)O N L EA K A G E (n A )0.10.0125160-60-2020CHARGE INJECTION vs. ANALOG VOLTAGE-4040V D (V)Q(p C )100-20-100201000.0001-75125SUPPLY CURRENT vs. TEMPERATURE0.00110TEMPERATURE (°C)I +, I -, I L (µA )0.10.01251__________________________________________Typical Operating Characteristics(T A = +25°C, unless otherwise noted.)DG421/DG423/DG425Improved Low-Power,CMOS Analog Switches with Latches_______________________________________________________________________________________5___________________Pin Descriptions__________Applications InformationOperation with Supply VoltagesOther Than ±15VThe DG421/DG423/DG425 switches operate with ±4.5V to ±20V bipolar supplies or with a +10V to +30V single supply. In either case, analog signals ranging from V+to V- can be switched. The Typical Operating Characteristics graphs illustrate typical analog-signal and supply-voltage on-resistance variations. The usual on-resistance temperature coefficient is 0.5%/°C (typ).Logic InputsThese devices operate with a single positive supply or with bipolar supplies. They maintain TTL compatibility with supplies anywhere in the ±4.5V to ±20V range as long as V L = +5V. If V L is connected to V+ or another supply at voltages other than +5V, the devices will operate at CMOS-logic-level inputs.Overvoltage ProtectionProper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maxi-mum ratings because stresses beyond the listed rat-ings may cause permanent damage to the devices.Always sequence V+ on first, followed by V L , V-, and logic inputs. If power-supply sequencing is not possi-ble, add two small, external signal diodes in series with supply pins for overvoltage protection (Figure 1).Adding diodes reduces the analog signal range to 1V below V+ and 1V above V-, without affecting low switch resistance and low leakage characteristics. Device operation is unchanged, and the difference between V+and V- should not exceed +44V.D G 421/D G 423/D G 425Improved Low-Power,CMOS Analog Switches with Latches 6_______________________________________________________________________________________Figure 2. Switching TimeFigure 3. Latch TimingV OUT is the steady-state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the output waveform.______________________________________________Timing Diagrams/Test CircuitsDG421/DG423/DG425Improved Low-Power,CMOS Analog Switches with Latches_______________________________________________________________________________________7Figure 5. Charge Injection_________________________________Timing Diagrams/Test Circuits (continued)Figure 4. DG423 Break-Before-Make IntervalFigure 6 . Off-Isolation Rejection RatioD G 421/D G 423/D G 425Improved Low-Power,CMOS Analog Switches with Latches 8_______________________________________________________________________________________Figure 8. Drain/Source-Off Capacitance _________________________________Timing Diagrams/Test Circuits (continued)Figure 7. CrosstalkFigure 9. Drain/Source-On CapacitanceDG421/DG423/DG425Improved Low-Power,CMOS Analog Switches with Latches_____________________________________________Pin Configurations (continued)_____________________________Functional Diagrams/Truth Tables (continued)D G 421/D G 423/D G 425Improved Low-Power,CMOS Analog Switches with Latches 10______________________________________________________________________________________*Contact factory for dice specifications.**Contact factory for availability and processing to MIL-STD-883B._Ordering Information (continued)___________________________________________________________Chip Topographies(2.66mm)0.082" (2.08mm)D1S1IN1N.C.N.C.N.C.N.C.D2RS S2IN2V-VL V+WR(2.66mm)0.082" (2.08mm)D1S1IN1D3S3S4D4D2RSS2IN2V-VL V+WRDG421DG423DG421DG423/DG425V L V L TRANSISTOR COUNT: 100SUBSTRATE CONNECTED TO V+TRANSISTOR COUNT: 100SUBSTRATE CONNECTED TO V+DG421/DG423/DG425Improved Low-Power,CMOS Analog Switches with Latches______________________________________________________________________________________11________________________________________________________Package InformationMaxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.12__________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 (408) 737-7600©1994 Maxim Integrated ProductsPrinted USAis a registered trademark of Maxim Integrated Products.D G 421/D G 423/D G 425Improved Low-Power,CMOS Analog Switches with Latches___________________________________________Package Information (continued)。
DG412DY中文资料
• Widest Dynamic Range • Low Signal Errors and Distortion • Break-Before-Make Switching Action • Simple Interfacing
APPLICATIONS
• Precision Automatic Test Equipment • Precision Data Acquisition • Communication Systems • Battery Powered Systems • Computer Peripherals
Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V
DG411 ON OFF
DG413
DG413
Dual-In-Line and SOIC
LCC
IN1 1
D1 IN1 NC IN2 D2
Key
16 IN2
3 2 1 20 19
D1 2 S1 3 V- 4 GND 5 S4 6 D4 7 IN4 8
Switch Off Leakage Current
Symbol VANALOG
rDS(on) IS(off) ID(off)
Channel On Leakage Current
Digital Control Input Current, VIN Low Input Current, VIN High Dynamic Characteristics
To achieve high-voltage ratings and superior switching performance, the DG411 series was built on Vishay Siliconix’s high voltage silicon gate process. An epitaxial layer prevents latchup.
DG450操作手册.中文版
目录1 DG450大钩使用维护手册 (1)1.1 技术规范 (1)1.2 结构说明 (1)1.3 使用与维护保养 (2)1.4 润滑 (3)1.5 运输包装 (3)1.6 轴承一览表 (3)1.7 专用工具 (3)1.8 附图 (3)1 DG450大钩使用维护手册1.1 技术规范最大钩载 4500kN弹簧行程 200mm弹簧负荷行程开始时 30600N行程终了时 56500N主钩口直径 180mm副钩口直径 120mm主钩口开口尺寸 220mm钩身旋转半径 510mm外形尺寸(长×宽×高) 2953×890×880mm质量 3496kg1.2 结构说明DG450大钩的钩身、吊环、吊环座是由特种合金钢铸造而成。
筒体、钩杆是由合金钢锻造而成,所以该大钩有较高的负荷能力。
大钩吊环(1)与吊环座(13)用吊环销(5)连接。
筒体(15)与钩身(32)用左旋螺纹连接,并用止动块防止螺纹松动。
钩身和筒体可沿钩杆上下运动,筒体和弹簧座(19)内装青铜衬套(12)和(20),以减少钩杆的磨损。
筒体内装有两个内、外弹簧,能使立根松扣后向上弹起。
DG450大钩是完全按照API SPEC 8A规范设计制造的。
大钩装配好后开有液流通道的弹簧座把钩身和筒体内的空腔分为两部分。
当筒体内装有机油后,可借助缓冲机构消除钩身上下运动时产生的轴向冲击,防止卸扣时钻杆的反弹振动及随着发生对钻杆接头螺纹的损坏,机油也同时润滑轴承(21)、制动装置(24)及其它零件。
筒体上部装有安全定位装置,该定位装置由安装在筒体上端的弹簧(11)和由弹簧推动的定位盘(10)组成,定位盘可上下滑动但不能转动。
当提升空吊卡时,定位盘与吊环座的环形面相接触,借助弹簧在环形面之间产生的摩擦力,来阻止钩身的转动,这样可避免吊卡转位,便于井架工操作吊卡。
当悬挂有钻杆柱时,定位盘与吊环座脱开,不起定位作用。
钩身就可以任意转动,就不会有转动游动滑车的倾向。
SN74LS445资料
Copyright © 1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.1POST OFFICE BOX 655303 • DALLAS, TEXAS 752652POST OFFICE BOX 655303 • DALLAS, TEXAS 75265元器件交易网IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1999, Texas Instruments Incorporated。
DG454资料
Vishay SiliconixDG454/DG455/DG456High Voltage 4-Ω Quad SPST CMOS Analog SwitchFEATURES•Low on-resistance (4 Ω typical)•On-resistance flatness (0.2 Ω typical) •100 mA continuous current •44 V supply maximum rating •± 15 V analog signal range•Fully specified at supply voltages of ± 5 V, 12 V and ± 15 V •NoV L required•Fast switching speed: - t on 80 ns - t off 60 ns•TTL/CMOS compatible •ESD protection 2 kV•Pin compatible with DG411, DG412, and DG413, exceptno V L requiredAPPLICATIONS•Audio and video signal switching •Precision automatic test equipment •Precision data acquisition •Relay replacement•Communications systems•Automotive and avionics applications •Sample and hold systemsDESCRIPTIONThe DG454 series has four independently selectable high voltage (44 V) SPST switches, each with a typical on resistance of 4 Ω and a typical flatness of 0.2 Ω, ideal parameters for low distortion audio signal switching.The DG454 (NC) and DG455 (NO) are identical except for the digital logic control input, which is inverted as shown in the Truth Table. The DG456 has two normally closed and two normally open switches.These are high voltage switches that are fully specified with dual supplies at ± 5 V and ± 15 V and a single supply of 12 V. Fast switching speeds coupled with high signal bandwidth makes these parts suitable for video switching applications.All digital inputs have 0.8 V and 2.4 V logic thresholds ensuring low voltage TTL/CMOS compatibility. Each switch conducts equally well in both directions when on and can handle an input signal range that extends to the supply voltage rails.The DG454 DG455 and DG456 are pin compatible with the DG411, DG412 and DG413, except they require no V L supply.FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONTRUTH TABLELogic DG454DG4550ON OFF 1OFFONTRUTH TABLELogic SW 1, SW 4SW 2, SW 30OFF ON 1ONOFFVishay SiliconixDG454/DG455/DG456Notes:a. - 40 °C to 85 °C datasheet limits apply.Notes:a. Signals on S X , D X , or IN X exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.b. All leads welded or soldered to PC board.c. Derate 5.6 mW/°C above 70 °C.d. Derate 8.0 mW/°C above 75 °C.ORDERING INFORMATIONTemp RangePackagePart NumberDG454/DG455/DG456- 40 °C to 125 °C a16-Pin TSSOPDG454EQ-T1-E3DG455EQ-T1-E3DG456EQ-T1-E316-Pin Narrow SOICDG454EY -T1-E3DG455EY -T1-E3DG456EY -T1-E3ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise notedParameter Limit Unit V+ to V- 44VGND to V- 25Digital Inputs a , VS , V D(V-) - 2 to (V+) + 2or 30 mA, whichever occurs firstContinuous Current (Any Terminal)100mA Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)300Storage T emperature - 65 to 150°C Power Dissipation (Package)b 16-Pin TSSOP c 450mW 16-Pin Narrow SOIC d 600Thermal Resistance (Package)b 16-Pin TSSOP 178°C/W 16-Pin Narrow SOIC125ESD (HBM)2kVSPECIFICATIONS FOR DUAL SUPPLIESParameter Symbol Test Conditions Unless Specified V+ = 15 V , V- = - 15 V V IN = 2.4 V , 0.8 V a Temp.b Typ.c- 40 to 125 °C- 40 to 85 °C UnitMin.dMax.dMin.dMax.dAnalog Switch Analog Signal Range e V ANALOG Full - 1515- 1515VOn-Resistance R ON I S = - 10 mA, V D = - 10 V to + 10 VRoom Full 3.8 5.38.3 5.37.3ΩOn-Resistance Match ΔR ONI S = - 10 mA, V D = ± 10 VRoom Full 0.120.510.50.5On-Resistance Flatness R FLATNESS I S = - 10 mA, V D = - 5 V , 0 V , + 5 V Room Full 0.250.50.50.50.5Switch OffLeakage Current I S(off)V D = ± 10 V , V S = 10 VRoom Full ± 0.1- 0.5- 200.520- 0.5- 2.50.52.5nA I D(off)Room Full ± 0.1- 0.5- 200.520- 0.5- 2.50.52.5Channel On Leakage CurrentI D(on)V S = V D = ± 10 VRoom Full± 0.1- 1- 40140- 1- 515±Vishay SiliconixDG454/DG455/DG456Parameter Symbol Test Conditions Unless Specified V+ = 15 V , V- = - 15 V V IN = 2.4 V , 0.8 V a Temp.b Typ.c- 40 to 125 °C- 40 to 85 °C UnitMin.dMax.dMin.dMax.dDigital Control Input Current, V IN Low I IL V IN Under T est = 0.8 V Full 0.005- 0.50.5- 0.50.5µA Input Current, V IN High I IH V IN Under T est = 2.4 VFull 0.005- 0.50.5- 0.50.5Input Capacitance e C INf = 1 MHzRoom7pFDynamic Characteristics T urn-On Time t ON R L = 300 Ω, C L = 35 pF V S = ± 10 V , See Figure 2Room Full 88118160118144nsT urn-Off Time t OFF Room Full 699712097112Break-Before-MakeTime Delay t D DG456 only, V S = 10 V R L = 300 Ω, C L = 35 pF Room 18Charge Injection e Q V g = 0 V , R g = 0 Ω, C L = 1 nFRoom 22pCOff Isolation eOIRR R L = 50 Ω, C L = 5 pFf = 1 MHzRoom - 60dB Channel-to-Channel Crosstalk eX TALK Room - 85Source Off Capacitance e C S(off) f = 1 MHzRoom 31pF Drain Off Capacitance e C D(off)Room 34Channel On Capacitance e C D(on)Room 103T otal Harmonic Distortion e THDSignal = 5 V RMS , 20 Hz to 20 kHz,R L = 600 ΩRoom0.04%Power Supplies Power Supply Current I+V+ = 16.5 V , V- = - 16.5 VV IN = 0 or 5 VRoom Full 25100100100100µANegative Supply Current I- Room Full - 0.001- 0.5- 5- 0.5- 5Ground CurrentI GNDRoom Full- 25- 100- 100- 100- 100SPECIFICATIONS FOR DUAL SUPPLIESSPECIFICATIONS FOR DUAL SUPPLIESParameter Symbol Test Conditions Unless Specified V+ = 5 V , V- = - 5 VV IN = 2.4 V , 0.8 V a Temp.b Typ.c- 40 to 125 °C - 40 to 85 °C UnitMin.dMax.dMin.dMax.dAnalog Switch Analog Signal Range e V ANALOG Full - 55- 55VOn-Resistance R ON V+ = + 5 V , V- = - 5 VI S = - 10 mA, V D = - 3.5 V to + 3.5 VRoom Full 3.811151112ΩOn-Resistance Match ΔR ONV+ = + 5 V, V- = - 5 V ,I S = - 10 mA, V D = ± 3.5 VRoom Full0.130.510.50.5Dynamic Characteristics T urn-On Time e t ON R L = 300 Ω, C L = 35 pF V S = 3 V, See Figure 2Room Full 170200296200256nsT urn-Off Time e t OFF Room Full 669612496113Break-Before-Make eTime Delay t D DG456 only, V S = 3 V R L = 300 Ω, C L = 35 pF Room 98Charge Injection eQV g = 0 V , R g = 0 Ω, C L = 1 nFRoom8pCVishay SiliconixDG454/DG455/DG456Notes:a. V IN = input voltage to perform proper function.b. Room = 25 °C, Full = as determined by the operating temperature suffix.c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.e. Guaranteed by design, not subject to production test.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Parameter Symbol Test Conditions Unless Specified V+ = 5 V , V- = - 5 VV IN = 2.4 V , 0.8 V a Temp.b Typ.c- 40 to 125 °C - 40 to 85 °C UnitMin.dMax.dMin.dMax.dPower Supplies Power Supply Current I+V IN = 0 or 5 VRoomFull 14100100100100µANegative Supply Current I- Room Full - 0.001- 0.5- 5- 0.5- 5Ground CurrentI GNDRoom Full- 14- 100- 100- 100- 100SPECIFICATIONS FOR DUAL SUPPLIESSPECIFICATIONS FOR UNIPOLAR SUPPLIESParameter Symbol Test Conditions Unless Specified V+ = 12 V, V- = 0 V V IN = 2.4 V, 0.8 V a Temp.b Typ.c- 40 to 125 °C- 40 to 85 °C UnitMin.dMax.dMin.dMax.dAnalog Switch Analog Signal Range e V ANALOG Full 1212VOn-Resistance R ON I S = - 10 mA, V D = 0 V to + 10 V Room Full 5.58.112.48.110.4ΩOn-Resistance Match ΔR ON I S = - 10 mA, V D = + 10 V Room Full 0.140.510.50.5On-Resistance Flatness R FLATNESSI S = - 10 mA, V D = 0 V , + 5 V , + 10 VRoom Full0.941.51.71.51.5Dynamic Characteristics Turn-On Time t ON R L = 300 Ω, C L = 35 pF V S = 8 V , See Figure 2Room Full 132162238162210nsTurn-Off Time t OFF Room Full 619111791105Break-Before-MakeTime Delay t D DG456 only, V S = 8 V R L = 300 Ω, C L = 35 pF Room 70Charge Injection e QV g = 0 V , R g = 0 Ω, C L = 1 nFRoom1pCPower Supplies Power Supply Current I+V+ = 13.5 V, V- = 0 VV IN = 0 or 5 VRoom Full 25100100100100µANegative Supply Current I- Room Full - 0.001- 0.5- 5- 0.5- 5Ground CurrentI GNDRoom Full- 25- 100- 100- 100- 100Vishay SiliconixDG454/DG455/DG456TYPICAL CHARACTERISTICS 25°C, unless otherwise notedDDOn-Resistance vs. V D and Single Supply VoltageDVishay SiliconixDG454/DG455/DG456TYPICAL CHARACTERISTICS 25°C, unless otherwise notedCharge Injection vs. Analog VoltageSwitching Time vs. Dual Supply VoltageSwitching Time vs. Single Supply VoltageSwitching Time vs. Temperature andDual Supply VoltageSingle Supply VoltageSupply Current vs. Input Switching FrequencyVishay SiliconixDG454/DG455/DG456TYPICAL CHARACTERISTICS 25°C, unless otherwise notedTEST CIRCUITSSwitching Threshold vs. Supply VoltageInsertion Loss, Off-Isolation, Crosstalkvs. FrequencyFigure 1. Switching TimeFigure 2. Break-Before-Make (DG456)Vishay SiliconixDG454/DG455/DG456TEST CIRCUITSVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?74473.Figure 3. Charge InjectionFigure 4. CrosstalkFigure 5. Off-IsolationFigure 6. Source/Drain CapacitancesDisclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
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PIN-PACKAGE 16 Plastic DIP 16 Narrow SO Dice* 16 Plastic DIP 16 Narrow SO
Ordering Information continued at end of data sheet. *Contact factory for dice specifications.
元器件交易网
DG444/DG445
Improved, Quad, SPST Analog Switches
ABSOLUTE MAXIMUM RATINGS
(Voltage Referenced to V-) V+ ........................................................................................44V GND ....................................................................................25V VL ..................................................(GND - 0.3V) to (V+ + 0.3V)
ELECTRICAL CHARACTERISTICS—Dual Supplies
(V+ = 15V, V- = -15V, VL = 5V, GND = 0, VINH = 2.4V, VINL = 0.8V, TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
________________________Applications
Sample-and-Hold Circuits Communication Systems
Test Equipment
Battery-Operated Systems
Heads-Up Displays
PBX, PABX
Guidance and Control Systems
Continuous Power Dissipation (TA = +70°C) 6-Pin Narrow SO (derate 8.70mW/°C above +70°C) ...696mW 16-Pin PDIP (derate 10.53mW/°C above +70°C)..........842mW 16-Pin Thin QFN (derate 33.3mW/°C above +70°C) ..2667mW
TA = +25°C TA = TMIN to TMAX
50
85
100
On-Resistance Match Between Channels (Note 4)
∆RDS(ON)
VD = ±10V, IS = -10mA
TA = +25°C TA = TMIN to TMAX
4 5
On-Resistance Flatness (Note 4) RFLAT(ON)
VD = ±5V, IS = -10mA
TA = +25°C TA = TMIN to TMAX
9 15
Source Leakage Current (Note 5)
Drain Off-Leakage Current (Note 5)
Drain On-Leakage Current (Note 5)
SWITCH Analog Signal Range
Drain-Source On-Resistance
SYMBOL
CONDITIONS
MIN TYP MAX (Note 2)
VANALOG (Note 3)
-15
+15
RDS(ON)
V+ = 13.5V, V- = -13.5V, VD = ±8.5V, IS = -10mA
Military Radios
Audio Signal Routing Modems/44CY DG444C/D DG444DJ DG444DY
Ordering Information
TEMP RANGE 0°C to +70°C 0°C to +70°C 0°C to +70°C
元器件交易网
19-4705; Rev 4; 6/04
Improved, Quad, SPST Analog Switches
DG444/DG445
General Description
New Features
Maxim’s redesigned DG444/DG445 analog switches now feature on-resistance matching (4Ω max) between switches and guaranteed on-resistance flatness over the signal range (9Ω max). These low on-resistance switches conduct equally well in either direction. They guarantee low charge injection (10pC max), low power consumption (35µW max), and an electrostatic discharge (ESD) tolerance of 2000V (min) per Method 3015.7. The new design offers lower off-leakage current over temperature (less than 5nA at +85°C).
The DG444/DG445 are quad, single-pole/single-throw (SPST) analog switches. The DG444 has four normally closed switches and the DG445 has four normally open switches. Switching times are less than 250ns for tON and less than 70ns for tOFF. Operation is from a single +10V to +30V supply, or bipolar ±4.5V to ±20V supplies. Maxim’s improved DG444/DG445 continue to be fabricated with a 44V silicon-gate process.
Operating Temperature Ranges DG444C/DG445C ................................................0°C to +70°C DG444D, E/DG445D, E ....................................-40°C to +85°C
(< 5nA at +85°C) ♦ Withstand ESD (2000V min)
per Method 3015.7
Existing Features
♦ Low RDS(ON) (85Ω max) ♦ Single-Supply Operation +10V to +30V
Bipolar-Supply Operation ±4.5V to ±20V ♦ Low Power Consumption (35µW max) ♦ Rail-to-Rail Signal Handling ♦ TTL/CMOS-Logic Compatible
13
S1 1 V- 2 GND 3
DG444
D4 7 IN4 8
10 D3 9 IN3
S4 4
DIP/SO
DG444
LOGIC
SWITCH
0
ON
1
OFF
5
6
7
8
D4 IN4 IN3 D3
Thin QFN
SWITCHES SHOWN FOR LOGIC "0" INPUT
Pin Configurations continued at end of data sheet.
INPUT Input Current with Input Voltage High Input Current with Input Voltage Low
Pin Configurations/Functional Diagrams/Truth Tables
TOP VIEW
IN1 1 D1 2 S1 3 V- 4 GND 5 S4 6
DG444
16 IN2 15 D2 14 S2 13 V+ 12 VL 11 S3
D1 IN1 IN2 D2
16
15
14
Digital Inputs VS, VD (Note 1).......(V- - 2V) to (V+ + 2V) or 30mA (whichever occurs first)
Continuous Current (any terminal) ......................................30mA Peak Current, S or D (pulsed at 1ms, 10% duty cycle max) .100mA