DMN5L06DMK-7;中文规格书,Datasheet资料
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DMN5L06DMK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • "Green" Device (Note 4) • Qualified to AEC-Q101 standards for High Reliability
Unit mW °C/W °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Mechanical Data
• Case: SOT-26 • Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.015 grams (approximate)
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Symbol PD RθJA
Tj, TSTG
Value 400 313 -65 to +150
200
150
PD, POWER DISSIPATION (mW)
100
50
RθJA = 556 °C/W
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C) Fig. 11 Derating Curve - Total
DMN5L06DMK
http://onDeocicum.ceonmt n/umber: DS30927 Rev. 4 - 2
ID(ON)
0.5
1.4
⎯
A
|Yfs|
200
⎯
⎯
mS
VSD
0.5
⎯
1.4
V
Ciss
⎯
Coss
⎯
Crss
⎯
⎯
50
pF
⎯
25
pF
⎯
5.0
pF
Notes:
1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.’s “Green” policy can be found on our website at /products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect.
2006 T
Jan
Feb
1
2
2007 U
Mar 3
2008 V
Apr
May
4
5
2009 W
Jun
Jul
6
7
2010 X
Aug
Sep
8
9
2011 Y
Oct O
2012 Z
Nov
Dec
N
D
Package Outline Dimensions
A
BC
H
K
M
J
DF
L
Suggested Pad Layout
E
E
VGS(th)
0.49
⎯
1.0
V
⎯
⎯
3.0
RDS (ON)
⎯
⎯
2.5
Ω
⎯
⎯
2.0
On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
DMN5L06DMK
http://onDeocicum.ceonmt n/umber: DS30927 Rev. 4 - 2
VDS = 25V, VGS = 0V f = 1.0MHz
September 2007
© Diodes Incorporated
DMN5L06DMK
NEW PRODUCT
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
M 0.10 0.20 0.15
α
0° 8°
–
All Dimensions in mm
Dimensions Z G X Y C E
Value (in mm) 3.20 1.60 0.55 0.80 2.40 0.95
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10
1
0 -50 -25 0 25 50 75 100 125 150
Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
Gate-Body Leakage
Symbol Min
Typ
Max
Unit
BVDSS
50
@ TC = 25°C
IDSS
⎯
IGSS
⎯
⎯
⎯
V
⎯
60
nA
1
μA
⎯
500nA50nAON CHARACTERISTICS (Note 5) Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Value
Unit
Drain Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 1)
Continuous Pulsed (Note 3)
ID
305 800
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
ZG
C
Y X
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
–
– 0.95
F
–
– 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
3 of 4
September 2007
© Diodes Incorporated
NEW PRODUCT
DMN5L06DMK
Ordering Information (Note 6)
Notes:
Part Number DMN5L06DMK-7
Case SOT-26
6. For packaging details, go to our website at /datasheets/ap02007.pdf.
VDS = VGS, ID = 250μA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA
Packaging 3000/Tape & Reel
Marking Information
Date Code Key Year Code
Month Code
DAB YM
D2
G1
S1
DAB YM
S2
G2
D1
DAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
2 of 4
September 2007
© Diodes Incorporated
DMN5L06DMK
IDR, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance
SOT-26
D2
G1
S1
NEW PRODUCT
ESD protected up 2kV
TOP VIEW
BOTTOM VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
S2
G2
D1
TOP VIEW Internal Schematic
Characteristic
vs. Ambient Temperature
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250
10
0
ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
1
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN5L06DMK
http://onDeocicum.ceonmt n/umber: DS30927 Rev. 4 - 2
1 of 4
Test Condition
VGS = 0V, ID = 10μA VDS = 50V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • "Green" Device (Note 4) • Qualified to AEC-Q101 standards for High Reliability
Unit mW °C/W °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Mechanical Data
• Case: SOT-26 • Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.015 grams (approximate)
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Symbol PD RθJA
Tj, TSTG
Value 400 313 -65 to +150
200
150
PD, POWER DISSIPATION (mW)
100
50
RθJA = 556 °C/W
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C) Fig. 11 Derating Curve - Total
DMN5L06DMK
http://onDeocicum.ceonmt n/umber: DS30927 Rev. 4 - 2
ID(ON)
0.5
1.4
⎯
A
|Yfs|
200
⎯
⎯
mS
VSD
0.5
⎯
1.4
V
Ciss
⎯
Coss
⎯
Crss
⎯
⎯
50
pF
⎯
25
pF
⎯
5.0
pF
Notes:
1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.’s “Green” policy can be found on our website at /products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect.
2006 T
Jan
Feb
1
2
2007 U
Mar 3
2008 V
Apr
May
4
5
2009 W
Jun
Jul
6
7
2010 X
Aug
Sep
8
9
2011 Y
Oct O
2012 Z
Nov
Dec
N
D
Package Outline Dimensions
A
BC
H
K
M
J
DF
L
Suggested Pad Layout
E
E
VGS(th)
0.49
⎯
1.0
V
⎯
⎯
3.0
RDS (ON)
⎯
⎯
2.5
Ω
⎯
⎯
2.0
On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
DMN5L06DMK
http://onDeocicum.ceonmt n/umber: DS30927 Rev. 4 - 2
VDS = 25V, VGS = 0V f = 1.0MHz
September 2007
© Diodes Incorporated
DMN5L06DMK
NEW PRODUCT
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
M 0.10 0.20 0.15
α
0° 8°
–
All Dimensions in mm
Dimensions Z G X Y C E
Value (in mm) 3.20 1.60 0.55 0.80 2.40 0.95
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10
1
0 -50 -25 0 25 50 75 100 125 150
Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
Gate-Body Leakage
Symbol Min
Typ
Max
Unit
BVDSS
50
@ TC = 25°C
IDSS
⎯
IGSS
⎯
⎯
⎯
V
⎯
60
nA
1
μA
⎯
500nA50nAON CHARACTERISTICS (Note 5) Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Value
Unit
Drain Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 1)
Continuous Pulsed (Note 3)
ID
305 800
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
ZG
C
Y X
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
–
– 0.95
F
–
– 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
3 of 4
September 2007
© Diodes Incorporated
NEW PRODUCT
DMN5L06DMK
Ordering Information (Note 6)
Notes:
Part Number DMN5L06DMK-7
Case SOT-26
6. For packaging details, go to our website at /datasheets/ap02007.pdf.
VDS = VGS, ID = 250μA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA
Packaging 3000/Tape & Reel
Marking Information
Date Code Key Year Code
Month Code
DAB YM
D2
G1
S1
DAB YM
S2
G2
D1
DAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
2 of 4
September 2007
© Diodes Incorporated
DMN5L06DMK
IDR, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance
SOT-26
D2
G1
S1
NEW PRODUCT
ESD protected up 2kV
TOP VIEW
BOTTOM VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
S2
G2
D1
TOP VIEW Internal Schematic
Characteristic
vs. Ambient Temperature
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250
10
0
ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
1
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN5L06DMK
http://onDeocicum.ceonmt n/umber: DS30927 Rev. 4 - 2
1 of 4
Test Condition
VGS = 0V, ID = 10μA VDS = 50V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V