BAV70-T中文资料
BAV70-7-F;BAV70-7;BAV70TA;中文规格书,Datasheet资料
DUAL SURFACE MOUNT SWITCHING DIODEFeatures• Fast Switching Speed • Surface Mount Package Ideally Suited for Automated Insertion • For General Purpose Switching Applications • High Conductance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Notes 3 & 4) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT23• Case Material: Molded Plastic. UL Flammability ClassificationRating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe(Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Polarity: See Diagram • Weight: 0.008 grams (approximate)Ordering Information (Note 5)Part Number Qualification Case PackagingBAV70-7-F Commercial SOT23 3,000/Tape & Reel BAV70-13-F Commercial SOT23 10,000/Tape & Reel BAV70Q-7-F Automotive SOT23 3,000/Tape & Reel BAV70Q-13-FAutomotive SOT23 10,000/Tape & ReelNotes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. Product manufactured with Date Code 9W (week 39, 2009) and newer are built with Green Molding Compound. Product manufactured prior to DateCode 9W are built with Non-Green Molding Compound and may contain Halogens or Sb 2O 3 Fire Retardants.5. For packaging details, go to our website at .Marking InformationDate Code KeyYear 2000 2001 ….. 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 CodeL M ….. U V W X YZ A B CDMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov DecCode 1 2 3 4 5 6 7 8 9 O N DTop View SOT23Internal SchematicK = SAT (Shanghai Assembly / Test site)JJ = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Z = 2012)M = Month (ex: 9 = September)C = CAT (Chengdu Assembly / Test site) JJ = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Z = 2012)M = Month (ex: 9 = September)CJJY MKJJ Y MMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitNon-Repetitive Peak Reverse Voltage V RM100 V Peak Repetitive Reverse VoltageWorking Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 75 V RMS Reverse Voltage V R(RMS) 53 V Forward Continuous Current (Note 6) I FM 300 mA Average Rectified Output Current (Note 6) I O 150 mA Repetitive Peak Forward Current I FRM450 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0μs@ t = 1.0sI FSM2.0 1.0 AThermal CharacteristicsCharacteristic Symbol Value UnitPower Dissipation (Note 6) P D 350 mW Thermal Resistance Junction to Ambient Air (Note 6) R θJA 357 °C/W Operating and Storage Temperature Range T J , T STG -65 to +150 °CElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Max Unit Test ConditionReverse Breakdown Voltage (Note 7) V (BR)R 75 ⎯ V I R = 2.5μAForward Voltage V F⎯ 0.7150.8551.0 1.25 V I F = 1.0mA I F = 10mA I F = 50mA I F = 150mAReverse Current (Note 7) I R ⎯2.550 30 25 μA μAμA nA V R = 75V V R = 75V, T J = 150°C V R = 25V, T J = 150°C V R = 20V Total Capacitance C T⎯ 2.0 pF V R= 0, f = 1.0MHz Reverse Recovery Time t rr ⎯4.0 ns I F = I R = 10mA,I rr = 0.1 x I R , R L = 100ΩNotes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at . 7. Short duration pulse test used to minimize self-heating effect.P , P O W E R D I S S I P A T I O N (m W )D T , AMBIENT TEMPERATURE (C)A °Fig. 1 Power Derating Curve, T otal PackageI , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V , INSTANTANEOUS FORWARD VOLTAGE (V)Fig. 2 Typical Forward Characteristics, Per ElementFV , INSTANTANEOUS REVERSE VOLTAGE (V)Fig. 3 Typical Reverse Characteristics, Per Element R I , I N S T A N T A N E O U S R E V E R S E C U R R E N T (n A )R C , T O T A L C A P A C I T A N C E (p F )T V , DC REVERSE VOLTAGE (V)Fig. 4 Total Capacitance vs. Reverse Voltage, Per Element RPackage Outline DimensionsSuggested Pad LayoutSOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11α0° 8° - All Dimensions in mmDimensionsValue (in mm)Z 2.9 X 0.8 Y0.9C 2.0 E1.35XEYCZIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息:DIODESBAV70-7-F BAV70-7BAV70TA。
BAV70中文资料_数据手册_参数
H E 2.10
T
0°
2.40 −−−
2.64 10°
MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014
0.083 0°
INCHES
NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−−
820 W
+10 V
2.0 k 100 mH IF 0.1 mF
50 W OUTPUT PULSE
GENERATOR
D.U.T.
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90% INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA IR
SOT−23 (TO−236) CASE 318 STYLE 9
3 CATHODE
ANODE 1
2 ANODE
MARKING DIAGRAM
A4 M G G
1
A4 = Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location) *Date Code orientation and/or overbar may
Figure 3. Leakage Current
0.6
0.58
0.56
0.54
0.52
0.5
0.48
0
1
BAV70LT1中文资料
LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching DiodeCommon Cathode共阴极单片双开关二极管3CATHODE阴极DEVICE MARKING器件标识BAV70LT131ANODE阳极 12 2ANODE阳极CASE 318-08, STYLE 9SOT-23 (TO-236AB)BAV70LT1 = A4MAXIMUM RATINGS (EACH DIODE) 最大额定值Rating Symbol Value Unit Reverse Voltage反向电压V R 70 VdcForward Current正向电流I F 200 mAdcPeak Forward Surge Current正向浪涌电流峰值I FM(surge) 500 mAdcTHERMAL CHARACTERISTICS热特性Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) P D 225 mWT A = 25°CDerate above 25°C FR – 5板的器件总功耗 1.8 mW/°CThermal Resistance, Junction to Ambient R θJA 556 °C/WTotal Device Dissipation P D 300 mWAlumina Substrate, (2) T A = 25°CDerate above 25°C氧化铝基板的器件总功耗 2.4 mW/°CThermal Resistance, Junction to Ambient热阻，结到环境R θJA 417 °C/WJunction and Storage Temperature结温和存储温度T J , T stg -55 to +150 °CELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)电气特性Characteristic Symbol Min Max Unit OFF CHARACTERISTICS开关特性Reverse Breakdown Voltage反向击穿电压(I (BR) = 100 µAdc)Reverse Voltage Leakage Current反向漏电流电压(V R = 25 Vdc, T J = 150°C)(V R = 70 Vdc)(V R = 70 Vdc, T J = 150°C)Diode Capacitance二极管电容(V R = 0, f = 1.0 MHz) V (BR) 70 —VdcI R µAdc—60— 2.5—100C D — 1.5 pFForward Voltage正向电压(I F = 1.0 mAdc)(I F = 10 mAdc)(I F = 50 mAdc)(I F = 150 mAdc)Reverse Recovery Time反向恢复时间 R L = 100 Ω(I F = I R = 10 mAdc, V R = 5.0 Vdc, I R(REC) = 1.0 mAdc) (Figure 1) V F mVdc—715—855—1000—1250t rr — 6.0 ns1. FR-5 = 1.0 x 0.75 x 0.062 in.2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.G5-1/1。
BAV70;BAV74;BAV70_D87Z;BAV74_D87Z;中文规格书,Datasheet资料
BAV70 / 74Small Signal DiodeAbsolute Maximum Ratings * T A= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of the diode may be impaired.NOTES:1)These ratings are based on a maximum junction temperature of 150 degrees C.2)These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal CharacteristicsElectrical Characteristics T A=25°C unless otherwise notedSymbol ParameterValue Units V RRM Maximum Repetitive Reverse Voltage BAV70BAV747050V V I F(AV)Average Rectified Forward Current 200mA I FSMNon-repetitive Peak Forward Surge CurrentPulse Width = 1.0 secondPulse Width = 1.0 microsecond 1.02.0A A T STG Storage Temperature Range -55 to +150°C T JOperating Junction Temperature150°CSymbol ParameterValue Units P D Power Dissipation350mW R θJAThermal Resistance, Junction to Ambient357°C/WSymbol ParameterTest ConditionsMin.Max.Units V R Breakdown Voltage BAV70BAV74I R = 100µA I R = 5.0µA 7550V V V FForward Voltage BAV70BAV74I F = 1.0mA I F = 10mA I F = 50mA I F = 150mA I F = 100mA7158551.01.251.0mV mV V V V I RReverse Leakage BAV70BAV74V R = 25V, T A = 150°C V R = 70VV R = 70V, T A = 150°C V R = 50VV R = 50V, T A = 150°C 605.010*******µA µA µA nA µA C T Total Capacitance BAV70BAV74V R = 0V, f = 1.0MHz V R = 0V, f = 1.0MHz1.52.0pF pF t rrReverse Recovery Time BAV70BAV74I F = I R = 10mA, I RR = 1.0mA, R L = 100ΩI F = I R = 10mA, I RR = 1.0mA, R L = 100Ω6.04.0ns nsBAV70 / 74Connection Diagram123A4123SOT-23312BAV70 A4 BAV74 JAMARKINGDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®VCX™A CEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™分销商库存信息:FAIRCHILDBAV70BAV74BAV70_D87Z BAV74_D87Z。
BAV70,215;BAV70,235;BAV70T,115;BAV70W,135;BAV70W,115;中文规格书,Datasheet资料
1.Product profile1.1General descriptionHigh-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)plastic packages.1.2Features1.3ApplicationsI High-speed switchingI General-purpose switching1.4Quick reference data[1]When switched from I F =10mA to I R =10mA; R L =100Ω; measured at I R =1mA.BAV70 seriesHigh-speed switching diodesRev. 07 — 27 November 2007Product data sheetTable 1.Product overviewType numberPackage PackageconfigurationConfiguration NXPJEITA JEDEC BAV70SOT23-TO-236AB smalldual common cathode BAV70M SOT883SC-101-leadless ultra small dual common cathode BAV70S SOT363SC-88-very small quadruple commoncathode/common cathode BAV70T SOT416SC-75-ultra small dual common cathode BAV70WSOT323SC-70-very smalldual common cathodeI High switching speed: t rr ≤4ns I Low capacitance: C d ≤1.5pF I Low leakage currentI Reverse voltage: V R ≤100VI Small SMD plastic packagesTable 2.Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I R reverse current V R =80V--0.5µA V R reverse voltage --100V t rrreverse recovery time[1]--4ns2.Pinning information3.Ordering informationTable 3.PinningPin Description Simplified outline SymbolBAV70; BAV70T; BAV70W1anode (diode 1)2anode (diode 2)3common cathodeBAV70M 1anode (diode 1)2anode (diode 2)3common cathodeBAV70S 1anode (diode 1)2anode (diode 2)3common cathode (diode 3and diode 4)4anode (diode 3)5anode (diode 4)6common cathode (diode 1and diode2)006aaa144123006aab034132312Transparent top view006aab034132132456006aab104136254Table 4.Ordering informationType numberPackage NameDescriptionVersion BAV70-plastic surface-mounted package; 3leadsSOT23BAV70M SC-101leadless ultra small plastic package; 3solder lands;body 1.0×0.6×0.5mmSOT883BAV70S SC-88plastic surface-mounted package; 6leads SOT363BAV70T SC-75plastic surface-mounted package; 3leads SOT416BAV70WSC-70plastic surface-mounted package; 3leadsSOT3234.Marking[1]* = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China5.Limiting valuesTable 5.Marking codesType numberMarking code [1]BAV70A4*BAV70M S4BAV70S A4*BAV70T A4BAV70WA4*Table 6.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit Per diode V RRM repetitive peak reverse voltage -100V V R reverse voltage -100V I Fforward current BAV70T amb ≤25°C -215mA BAV70M T s =90°C -150mA BAV70S T s =60°C -250mA BAV70T T s =90°C -150mA BAV70WT amb ≤25°C-175mAI FRMrepetitive peak forward current BAV70-450mA BAV70M -500mA BAV70S -450mA BAV70T -500mA BAV70W-500mA I FSMnon-repetitive peak forward current square wave [1]t p =1µs-4A t p =1ms -1A t p =1s-0.5A[1]T j =25°C prior to surge.[2]Device mounted on an FR4Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.[3]Reflow soldering is the only recommended soldering method.6.Thermal characteristics[1]Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint.[2]Reflow soldering is the only recommended soldering method.P tottotal power dissipation [2]BAV70T amb ≤25°C -250mW BAV70M T amb ≤25°C [3]-250mW BAV70S T s =60°C -350mW BAV70T T s =90°C -170mW BAV70WT amb ≤25°C-200mWPer device I Fforward current BAV70T amb ≤25°C -125mA BAV70M T s =90°C -75mA BAV70S T s =60°C -100mA BAV70T T s =90°C -75mA BAV70WT amb ≤25°C-100mA T j junction temperature -150°C T amb ambient temperature −65+150°C T stgstorage temperature−65+150°CTable 6.Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit Table 7.Thermal characteristics Symbol ParameterConditions Min Typ Max UnitPer diode R th(j-a)thermal resistance from junction to ambient in free air[1]BAV70--500K/W BAV70M [2]--500K/W BAV70W--625K/WR th(j-t)thermal resistance from junction to tie-point BAV70--360K/W BAV70W--300K/WR th(j-sp)thermal resistance from junction to solder point BAV70S --255K/W BAV70T--350K/W7.CharacteristicsTable 8.CharacteristicsT amb=25°C unless otherwise specified.Symbol Parameter Conditions Min Typ Max UnitPer diodeV F forward voltage[1]I F=1mA--715mVI F=10mA--855mVI F=50mA--1VI F=150mA-- 1.25VI R reverse current V R=25V--30nAV R=80V--0.5µAV R=25V;T j=150°C--30µAV R=80V;T j=150°C--100µAC d diode capacitance V R=0V; f=1MHz-- 1.5pFt rr reverse recovery time[2]--4nsV FR forward recovery voltage[3]-- 1.75V[1]Pulse test: t p≤300µs;δ≤0.02.[2]When switched from I F=10mA to I R=10mA; R L=100Ω; measured at I R=1mA.[3]When switched from I F=10mA; t r=20ns.(1)T amb =150°C (2)T amb =85°C (3)T amb =25°C (4)T amb =−40°CBased on square wave currents.T j =25°C; prior to surgeFig 1.Forward current as a function of forwardvoltage; typical valuesFig 2.Non-repetitive peak forward current as afunction of pulse duration; maximum values(1)T amb =150°C (2)T amb =85°C (3)T amb =25°C (4)T amb =−40°Cf =1MHz; T amb =25°CFig 3.Reverse current as a function of reversevoltage; typical values Fig 4.Diode capacitance as a function of reversevoltage; typical values006aab107V F (V)0.21.41.00.6110102103I F (mA)10−1(1)(2)(3)(4)mbg704101102I FSM (A)10−1t p (µs)110410310102006aab10810−210−410−310110−1102I R (µA)10−5V R (V)10080406020(1)(2)(3)(4)08161240.80.60.40.2mbg446V R (V)C d (pF )8.Test information(1)I R =1mAInput signal: reverse pulse rise time t r =0.6ns; reverse voltage pulse duration t p =100ns; duty cycle δ=0.05Oscilloscope: rise time t r =0.35nsFig 5.Reverse recovery time test circuit and waveformsInput signal: forward pulse rise time t r =20ns; forward current pulse duration t p ≥100ns; duty cycle δ≤0.005Fig 6.Forward recovery voltage test circuit and waveformst rr(1)+ I Ftoutput signalt rt pt10 %90 %V Rinput signal V = V R + I F × R SR S = 50 ΩI FD.U.T.R i = 50 ΩSAMPLING OSCILLOSCOPEmga881t rtt p 10 %90 %Iinput signalR S = 50 ΩIR i = 50 ΩOSCILLOSCOPE1 k Ω450 ΩD.U.T.mga882V FRtoutput signalV9.Package outlineFig 7.Package outline BAV70(SOT23/TO-236AB)Fig 8.Package outline BAV70M (SOT883/SC-101)Fig 9.Package outline BAV70S (SOT363/SC-88)Fig 10.Package outline BAV70T (SOT416/SC-75)Fig 11.Package outline BAV70W (SOT323/SC-70)04-11-04Dimensions in mm0.450.151.91.10.93.02.82.52.1 1.41.20.480.380.150.0912303-04-03Dimensions in mm0.620.550.550.470.500.460.650.200.123210.300.220.300.221.020.950.3506-03-16Dimensions in mm0.250.100.30.2pin 1index1.30.652.22.0 1.351.152.21.8 1.10.80.450.1513246504-11-04Dimensions in mm0.950.601.81.41.751.450.90.70.250.1010.300.151230.450.1504-11-04Dimensions in mm0.450.151.10.82.21.82.22.0 1.351.151.30.40.30.250.1012310.Packing information[1]For further information and the availability of packing methods, see Section 14.[2]T1: normal taping [3]T2: reverse taping11.SolderingTable 9.Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number Package DescriptionPacking quantity 300010000BAV70SOT234mm pitch, 8mm tape and reel -215-235BAV70M SOT8832mm pitch, 8mm tape and reel --315BAV70S SOT3634mm pitch, 8mm tape and reel; T1[2]-115-1354mm pitch, 8mm tape and reel; T2[3]-125-165BAV70T SOT4164mm pitch, 8mm tape and reel -115-135BAV70WSOT3234mm pitch, 8mm tape and reel-115-135Fig 12.Reflow soldering footprint BAV70(SOT23/TO-236AB)solder resistoccupied areasolder landssolder paste Dimensions in mmsot0231.000.60(3x)1.301232.503.000.85 2.702.900.50 (3x)0.60 (3x)3.300.85Fig 13.Wave soldering footprint BAV70(SOT23/TO-236AB)Reflow soldering is the only recommended soldering method.Fig 14.Reflow soldering footprint BAV70M (SOT883/SC-101)sot0234.004.60 2.804.501.203.403211.20 (2x)preferred transport direction during solderingDimensions in mmsolder resist occupied areasolder lands solder lands solder pastesolder resist occupied areaDimensions in mm1.300.30R = 0.05 (12×)R = 0.05 (12×)0.600.700.800.900.30(2×)0.35(2×)0.200.40(2×)0.50(2×)0.25(2×)0.300.400.50分销商库存信息:NXPBAV70,215BAV70,235BAV70T,115 BAV70W,135BAV70W,115BAV70S,115 BAV70M,315BAV70S,135。
MCC BAV70WT 电路切换二极管数据手册说明书
BAV70WT
Packing Tape&Reel: 3Kpcs/Reel
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LBAV70LT1G中文资料
Max
—
60 2.5 100 1.5
715 855 1000 1250 6.0
Unit Vdc µAdc
pF mVdc
ns
LBAV70LT1–1/3
元器件交易网
IF, FORWARD CURRENT (mA)
LESHAN RADIO COMPANY, LTD.
820 Ω
RL=100Ω
(IF= IR=10 mAdc, VR=5.0Vdc, IR(REC)= 1.0 mAdc) (Figure 1)
trr
1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
Unit Vdc mAdc mAdc
Junction and Storage Temperature
TJ, Tstg
DEVICE MARKING
Max 70 200 500
Max 225
1.8 556 300
2.4 417 –55 to +150
LBAV70LT1 = A4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Rating
Symbol
Reveard Surge Current THERMAL CHARACTERISTICS
VR IF IFM(surge)
Characteristic
Symbol
Total Device Dissipation FR–5 Board(1)
TA = 85°C
1.0
TA = 25°C
BAV70-V中文资料
BAV70-VDocument Number 85546 Rev. 1.7, 09-Mar-06Vishay Semiconductors1Small Signal Switching Diode, DualFeatures•Silicon Epitaxial Planar Diode•Fast switching dual diode with commoncathode•This diode is also available in other con-figurations including:a dual common anode tocathode with type designation BAV99-V, a dualcommon anode with type designation BAW56-V,and a single diode with type designation BAL99-V. •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002-96/ECMechanical Data Case: SOT23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options:GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/boxParts TableAbsolute Maximum Ratings T amb = 25°C, unless otherwise specified 1) Device on fiberglass substrate, see layoutPart Ordering code Marking Remarks BAV70-V BAV70-V-GS18 or BAV70-V-GS08JJ T ape and ReelParameter T est condition Symbol Value Unit Reverse voltage, peak reversevoltageV R, V RM70V Forward current (continuous)I F250mA Non repetitive peak forwardcurrentt p = 1 µs I FSM2At p = 1 ms I FSM1At p = 1 s I FSM0.5A Power dissipation P tot3501)mW 2Document Number 85546Rev. 1.7, 09-Mar-06BAV70-VVishay Semiconductors Thermal CharacteristicsT amb = 25°C, unless otherwise specified1)Device on Fiberglass substrate, see layout on second page.Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedTypical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterT est condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 4301)°C/W Junction temperature T j 150°C Storage temperature rangeT j = T stg- 65 to + 150°CParameterTest conditionSymbol MinTyp.Max Unit Forward voltageI F = 1 mA V F 715mV I F = 10 mA V F 855mV I F = 50 mA V F 1V I F = 150 mAV F 1.25VReverse currentV R = 70 VI R 2.5µA V R = 70 V , T j = 150°C I R 50µA V R = 25 V , T j = 150°CI R 30µA Diode capacitance V R = 0, f = 1 MHz C D 1.5pF Reverse recovery timeI F = 10 mA to I R = 1 mA, V R = 6 V , R L = 100 Ωt rr6nsFigure 1. Forward Current vs. Forward VoltageV F -For w ard V oltage (V )14356Figure 2. Peak forward current I FM = f (t p )BAV70-VDocument Number 85546Rev. 1.7, 09-Mar-06Vishay Semiconductors3Package Dimensions in mm (Inches) 4Document Number 85546 Rev. 1.7, 09-Mar-06BAV70-VVishay SemiconductorsOzone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the L ondon Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
DIODES小讯号开关二极管BAV70选型手册
Packaging 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https:///quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Month Code
2000 L
Jan 1
2001 M
Feb 2
….. 2013 2014 2015 2016 2017 2018 2019
…..
A
B
C
D
E
F
G
Mar
Apr
May
Jun
3
4
5
6
Jul
Aug
Sep
7
8
9
2020 H
Oct O
2021 I
Nov N
2022 J
Dec D
BAV70
Document number: DS12006 Rev. 23 - 2
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
变频器常见故障处理及简单维修ppt课件
• 经验分享：对于18.5KW以下的机器，整流桥损坏的时候，一般开关 电源部分常坏的元件有开关管K2225（K2717），缓冲电阻及开关电 源部分的一些小贴片电阻。
图片
www.invt
2.逆变模单块击损坏此处编辑母版标题样式
• 故障原因：一般是由于电机短路或电缆损坏引起，模块损坏的同时一
• 单 般驱击动电此路处也会编损坏辑。母版文本样式 • 第二级 • 故障现象：逆变模块损坏通常会报OUT1，OUT2，OUT3等故障，其
分别对应逆变模块U、V、W相故障，有时也会报SPO。
• 第三级
• 对策：如果在公司修机则应该在拆下模块的同时将驱动电路修复并测
• 第四级 量其驱动波形正常后更换新的模块。在现场服务则应该将模块连驱动 板一起更换，更换之后测量主回路电路正常后还不能立即上电测试，
• 第二级 • 对策：由于CH系列18.5KW以下的机器整流桥跟逆变模块是集成在一 块功率模块上的，整流桥损坏的同时逆变部分也极有可能损坏,同时还
• 第三级 可能殃及开关电源电路，驱动电路。因此在维修的时候应该将模块取 下来后，检查驱动电源板是否正常，如果在现场修机的话应该将驱动
• 第四级 板跟模块一块更换。18.5KW以上的机器因为可控硅或整流桥跟逆变 模块、驱动电源板都是分离的，因此整流桥损坏的时候一般只需更换
• 第三级 一类就是参数设置不当或选型不当等外部原因导致报故障。在这里， 我们不妨将其归为两大类分别加以讲解：第一类即变频器内部电路故
• 第障；四第级二类称为外部故障。 • 第五级
www.invt
单击此处编辑母版标题样式 •第单一击类此：处C编H辑系母列版变文频本器样常式见内部电路故障
• 第五级 应该脱开马达连接电缆。在确定无任何故障的情况下，运行变频器。
BAV70中文资料
DATA SHEET
book, halfpage
M3D088
BAV70 High-speed double diode
Product specification Supersedes data of 1997 Nov 24
1999 May 05
Philips Semiconductors
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode VRRM VR IF
High-speed double diode
Product specification
BAV70
FEATURES
• Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage:
max. 70 V • Repetitive peak reverse voltage:
200
Fig.5 Reverse current as a function of junction temperature.
handbook0, .h8alfpage Cd (pF)
0.6
MBG446
0.4
0.2
0
0
4
8
12 VR (V) 16
f = 1 MHz; Tj = 25 °C.
BAV70_SER
BAV70_SERBAV70seriesHigh-speedswitchingdiodes1.Productprofile1.1GeneraldescriptionHigh-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages.1.2Features1.3ApplicationsnHigh-speedswitchingnGeneral-purposeswitching1.4Quickreferencedata[1]WhenswitchedfromIF=10mAtoIR=10mA;RL=100?;measuredatIR=1mA.Rev.07—27November2007Productdatasheet Table1.Productoverview TypenumberPackagePackageconfigurationConfigurationNXPJEITAJEDECBAV70SOT23-TO-236ABsmalldualcommoncathode BAV70MSOT883SC-101-leadlessultrasmalldualcommoncathodeBAV70SSOT363SC-88-verysmallquadruplecommon cathode/commoncathodeBAV70TSOT416SC-75-ultrasmalldualcommoncathode BAV70WSOT323SC-70-verysmalldualcommoncathode nHighswitchingspeed:trr≤4nsnLowcapacitance:Cd≤1.5pF nLowleakagecurrentnReversevoltage:VR≤100VnSmallSMDplasticpackagesTable2.QuickreferencedataSymbolParameterConditionsMinTypMaxUnit PerdiodeIRreversecurrentVR=80V--0.5μAVRreversevoltage--100Vtrrreverserecoverytime[1]--4nsNXPSemiconductorsBAV70series High-speedswitchingdiodes2.Pinninginformation3.OrderinginformationTable3.Pinning PinDescriptionSimplifiedoutlineSymbol BAV70;BAV70T;BAV70W1anode(diode1)2anode(diode2)3commoncathodeBAV70M1anode(diode1)2anode(diode2)3commoncathodeBAV70S1anode(diode1)2anode(diode2)3commoncathode(diode3 anddiode4)4anode(diode3)5anode(diode4)6commoncathode(diode1 anddiode2)006aaa144123006aab034132312 Transparent topview 006aab034 132132456006aab104 136254Table4.OrderinginformationTypenumberPackageNameDescriptionVersionBAV70-plasticsurface-mountedpackage;3leadsSOT23BAV70MSC-101leadlessultrasmallplasticpackage;3solderlands;body1.0×0.6×0.5mmSOT883BAV70SSC-88plasticsurface-mountedpackage;6leadsSOT363BAV70TSC-75plasticsurface-mountedpackage;3leadsSOT416BAV70WSC-70plasticsurface-mountedpackage;3leadsSOT323BAV70_SER_7?NXPB.V.2007.Allrightsreserved.ProductdatasheetRev.07—27November20072of15NXPSemiconductorsBAV70series High-speedswitchingdiodes 4.Marking[1]=-:madeinHongKong=p:madeinHongKong=t:madeinMalaysia=W:madeinChina5.LimitingvaluesTable5.Markingcodes TypenumberMarkingcode [1]BAV70A4BAV70MS4BAV70SA4BAV70TA4BAV70WA4Table6.LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60 134).SymbolParameterConditionsMinMaxUnitPerdiodeVRRMrepetitivepeakreversevoltage-100VVRreversevoltage-100VIF forwardcurrent BAV70Tamb≤25°C-215mA BAV70MTs=90°C-150mA BAV70STs=60°C-250mA BAV70TTs=90°C-150mA BAV70WTamb≤25°C-175mAIFRM repetitivepeakforward currentBAV70-450mABAV70M-500mABAV70S-450mABAV70T-500mABAV70W-500mAIFSMnon-repetitivepeakforward currentsquarewave[1]tp=1μs-4Atp=1ms-1Atp=1s-0.5ABAV70_SER_7?NXPB.V.2007.Allrightsreserved. ProductdatasheetRev.07—27November20073of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes[1]Tj=25°Cpriortosurge.[2]DevicemountedonanFR4Printed-CircuitBoard(PCB),single-sidedcopper,tin-platedandstandard footprint.[3]Reflowsolderingistheonlyrecommendedsolderingmethod.6.ThermalcharacteristicsPtottotalpowerdissipation[2]BAV70Tamb≤25°C-250mWBAV70MTamb≤25°C[3]-250mW BAV70STs=60°C-350mW BAV70TTs=90°C-170mW BAV70WT amb≤25°C-200mW PerdeviceIF forwardcurrent BAV70Tamb≤25°C-125mA BAV70MTs=90°C-75mA BAV70STs=60°C-100mA BAV70TTs=90°C-75mA BAV70WTamb≤25°C-100mATjjunctiontemperature-150°CTambambienttemperature?65+150°CTstgstoragetemperature?65+150°CTable6.Limitingvalues…continuedInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60 134).SymbolParameterConditionsMinMaxUnitTable7.Thermalcharacteristics SymbolParameterConditionsMinTypMaxUnit PerdiodeRth(j-a)thermalresistancefrom junctiontoambientinfreeair[1]BAV70--500K/WBAV70M[2]--500K/WBAV70W--625K/WRth(j-t)thermalresistancefromjunctiontotie-pointBAV70--360K/WBAV70W--300K/WRth(j-sp)thermalresistancefromjunctiontosolderpointBAV70S--255K/WBAV70T--350K/WBAV70_SER_7?NXPB.V.2007.Allrightsreserved.ProductdatasheetRev.07—27November20074of15[1]DevicemountedonanFR4PCB,single-sidedcopper,tin-platedandstandardfootprint.[2]Reflowsolderingistheonlyrecommendedsolderingmethod.NXPSemiconductorsBAV70series High-speedswitchingdiodes 7.Characteristics[1]Pulsetest:tp≤300μs;δ≤0.02.[2]WhenswitchedfromIF=10mAtoIR=10mA;RL=100?;measuredatIR=1mA.[3]WhenswitchedfromIF=10mA;tr=20ns.Table8.CharacteristicsTamb=25°Cunlessotherwisespecified. SymbolParameterConditionsMinTypMaxUnit PerdiodeVFforwardvoltage[1]IF=1mA--715mV IF=10mA--855mV IF=50mA--1VIF=150mA--1.25V IR reversecurrentVR=25V--30nA VR=80V--0.5μAVR=25V;Tj=150°C--30μA VR=80V;Tj=150°C--100μACd diodecapacitanceVR=0V;f=1MHz--1.5pFtrr reverserecoverytime [2]--4nsVFR forwardrecoveryvoltage [3]--1.75VBAV70_SER_7?NXPB.V.2007.Allrightsreserved. ProductdatasheetRev.07—27November20075of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes(1)Tamb=150°C(2)Tamb=85°C(3)Tamb=25°C(4)Tamb=?40°C Basedonsquarewavecurrents.Tj=25°C;priortosurgeFig1.Forwardcurrentasafunctionofforward voltage;typicalvaluesFig2.Non-repetitivepeakforwardcurrentasa functionofpulseduration;maximumvalues (1)Tamb=150°C(2)Tamb=85°C(3)Tamb=25°C(4)Tamb=?40°Cf=1MHz;Tamb=25°CFig3.Reversecurrentasafunctionofreverse voltage;typicalvaluesFig4.Diodecapacitanceasafunctionofreverse voltage;typicalvalues006aab107VF(V)0.21.41.00.6 110102103IF(mA)10-1(1)(2)(3)(4)mbg704 101102IFSM(A)101tp(μs) 110410310102006aab108 10-210-410-310110-1102IR(mA)10-5VR(V) 010*********(1)(2)(3)(4)08161240.80.60.40.2mbg446VR(V)Cd(pF)BAV70_SER_7?NXPB.V.2007.Allrightsreserved.ProductdatasheetRev.07—27November20076of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes8.Testinformation(1)IR=1mAInputsignal:reversepulserisetimetr=0.6ns;reversevoltagepulsedurationtp=100ns;dutycycleδ=0.05Oscilloscope:risetimetr=0.35nsFig5.Reverserecoverytimetestcircuitandwaveforms Inputsignal:forwardpulserisetimetr=20ns;forwardcurrentpulsedurationtp≥100ns;dutycycleδ≤0.005Fig6.Forwardrecoveryvoltagetestcircuitandwaveforms trr(1)+IFtoutputsignaltrtpt10%90%VR inputsignal V=VR+IF·RSRS=50WIFD.U.T.Ri=50W SAMPLING OSCILLOSCOPEmga881trttp10%90%I inputsignal RS=50?IRi=50?OSCILLOSCOPE1k?450?D.U.T.mga882VFRtoutputsignalVBAV70_SER_7?NXPB.V.2007.Allrightsreserved. ProductdatasheetRev.07—27November20077of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes9.PackageoutlineFig7.PackageoutlineBAV70(SOT23/TO-236AB)Fig8.PackageoutlineBAV70M(SOT883/SC-101)Fig9.PackageoutlineBAV70S(SOT363/SC-88)Fig10.PackageoutlineBAV70T(SOT416/SC-75)04-11-04Dimensionsinmm0.450.151.91.10.93.02.82.52.11.41.20.480.380.150.0912303-04-03Dimensionsinmm 0.620.550.550.470.500.460.650.200.123210.300.220.300.221.020.950.3506-03-16Dimensionsinmm 0.250.100.30.2 pin1 index 1.3 0.65 2.2 2.0 1.351.152.2 1.8 1.1 0.8 0.45 0.1513246504-11-04Dimensionsinmm 0.950.601.81.41.751.450.90.70.250.1010.300.151230.450.1504-11-04Dimensionsinmm 0.450.151.10.82.21.82.22.01.351.151.30.40.30.250.10123BAV70_SER_7?NXPB.V.2007.Allrightsreserved.ProductdatasheetRev.07—27November20078of15Fig11.PackageoutlineBAV70W(SOT323/SC-70)NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodes10.Packinginformation[1]Forfurtherinformationandtheavailabilityofpackingmethod s,seeSection14.[2]T1:normaltaping[3]T2:reversetaping11.SolderingTable9.PackingmethodsTheindicated-xxxarethelastthreedigitsofthe12NCorderingcode.[1]TypenumberPackageDescriptionPackingquantity300010000BAV70SOT234mmpitch,8mmtapeandreel-215-235BAV70MSOT8832mmpitch,8mmtapeandreel--315BAV70SSOT3634mmpitch,8mmtapeandreel;T1[2]-115-1354mmpitch,8mmtapeandreel;T2[3]-125-165BAV70TSOT4164mmpitch,8mmtapeandreel-115-135 BAV70WSOT3234mmpitch,8mmtapeandreel-115-135 Fig12.ReflowsolderingfootprintBAV70(SOT23/TO-236AB) solderresistoccupiedareasolderlandssolderpasteDimensionsinmmsot0231.000.60(3x)1.301232.503.000.852.702.900.50(3x)0.60(3x)3.300.85BAV70_SER_7?NXPB.V.2007.Allrightsreserved. ProductdatasheetRev.07—27November20079of15 NXPSemiconductorsBAV70seriesHigh-speedswitchingdiodesFig13.WavesolderingfootprintBAV70(SOT23/TO-236AB)Reflowsolderingistheonlyrecommendedsolderingmethod. Fig14.ReflowsolderingfootprintBAV70M(SOT883/SC-101) sot0234.004.602.804.501.203.403211.20(2x) preferredtransportdirectionduringsoldering Dimensionsinmmsolderresistoccupiedareasolderlands solderlands solderpaste solderresist occupiedarea Dimensionsinmm1.300.30R=0.05(12·)R=0.05(12·) 0.600.700.800.900.30(2·)0.35(2·)0.200.40。
AOCV27TChinese
电视机的连接和准备
在墙上安装电视
本电视符合墙上安装的 VESA 标准，请参阅规格页了解壁挂尺寸。 需要挂墙时，为保障您及本机的安全，请使用原厂挂墙支架并由专业人员安装。 如果您要把电视机挂在墙上，所有连接线都必须先插入电视机的接口。电视机 与墙面必须至少保持 6 厘米的距离以确保所有接口都有足够的空间可以插入。 不论您在何处放置或悬挂电视机，都应确保空气可以通过通风槽进行自由流 通。 不要把电视机放在封闭的空间内。
安装底座
从纸箱中取出电视以及底座,利用附件盒中的螺丝将它们组装起来,具体如下 图所示: 1. 将电视机正面朝下放在桌面上的软布或软垫上。拧紧底座上的螺丝，
将脚座和支架固定在一起。 2. 将脚座插入电视底部的孔中。
拆卸底座
请使用螺丝刀头插入支架固定孔，用力向下按压，同时拔出底座。
电视机的连接和准备
将电视放在稳固的平面上
20. 电力线路 – 室外天线应远离电力线路。 21. 室外天线接地 – 如果外部天线连接到接收器，确定该天线系统已接地，可以提
供保护，能防止电涌和静电聚集。 National Electric Code 的 810 节， ANSI/NFPA No. 70-1984 提供了以下方面 的信息：线网正确接地，天线引入线到天线放电装置的支撑结构接地，接地接头 的大小，天线充电装置的位置，接地电极的连接，以及接地电极的要求。请参阅 下图。
中国大陆rohs法规标示要求根据中国大陆电子信息产品污染控制管理办法也称为中国大陆rohs以下部分列出了本产品中可能包含的有毒有害物质或元素的名称和含量本表适用之产品显示器液晶及crt平板电视液晶及等离子监视器有毒有害物质或元素有毒有害物质或元素部件名称铅pb汞hg镉cd多溴联苯pbbpbde外壳
BAV70WT1资料
IR1 IR2 CD VF
— — —
5.0 100 1.5
µAdc nAdc pF mVdc
— — — — trr VRF — —
715 855 1000 1250 6.0 1.75 ns V
0.062 in. 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
1.0
TA = 55°C 0.01 TA = 25°C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.001 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
Figure 3. Forward Voltage
1
元器件交易网 BAV70WT1
BAV70
RS = 50 Ω IF SAMPLING OSCILLOSCOPE RL = 50 Ω
tr
tp I 10% +IF trr OUTPUT PULSE
VR
90% INPUT PULSE
10% OF
VR 100 W
Figure 1. Recovery Time Equivalent Test Circuit
BAS16T-TP;BAV70T-TP;BAW56T-TP;BAV99T-TP;中文规格书,Datasheet资料
0.1
0.01
0.001
0.0001 0 50 100 150 200 Tj, JUNCTION TEMPERATURE (° C) Fig. 3istics
Revision: A
2 of 3
2011/01/01
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B
C
Electrical Characteristics @ 25qC Unless Otherwise Specified
Peak Repetitive Reverse Voltage Continuous Forward Current Power Dissipation Peak Forward Surge Current @t=1.0us @t=1.0ms @t=1.0s Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Total Capacitance Reverse Recovery Time VRRM IF PD IFSM 85V 75mA 150mW 4.0A 1.0A 0.5A 715mV 855mV 1000mV 1250mV 2PA 0.03PA 1.5pF 4nS IF = 1mA IF = 10mA; IF = 50mA IF = 150mA VR=75Volts VR=25Volts Measured at 1.0MHz, VR=0V IF = IR = 10mA, Irr = 0.1 x IR, RL = 100:
MCC
Micro Commercial Components
TM
Ordering Information :
MTC CBT-70T 分布式扬声器系统适配器说明书
MTC-CBT-70T Bolt-On TransformerModule for CBT 70 ModelsProfessional SeriesKey Features:᭤Adapts the CBT 70J-1 (and 70JE-1)for Use on Distributed SpeakerLines᭤120W, 60W, 30W for 70V or 100V(plus 15W for 70V)᭤Bolts onto Back of CBT 70J-1 or70JE-1 Speaker᭤Gland Nuts Provide Water TightSealApplications:MTC-CBT-70T is a bolt-ontransformer module to adaptCBT70J-1 and CBT 70JE-1 (andCBT70J-1/JE-1 arrays) for use ondistributed loudspeaker lines. It allows long cable runs and multiple speakers to be driven from a single distributed system amplifier channel. Transformer taps include 120W,60W, and 30W for 70V and 100V distributed lines, plus 15W for 70V only.Connections are made via customer-supplied cable to screw-down terminals inside the enclosure. Two gland nuts are provided –one for the cable into the enclosure from the amplifier and one for the cable from the enclosed terminal strip tothe input terminal of the loudspeaker. The gland nuts form a water-tightseal when used with round jacketed cable with outside diameter between 4.0 mm (0.16 in) and 9.0 mm(0.36in).The tap selection is made via the terminal connection of the cable from the power amplifier to the appropriate terminals on the internal terminal strip.Mounting holes are provided thatfit via two 6 mm screws to any of the two side-by-side insert points on the back of the CBT 70J-1 or CBT 70JE-1 cabinet.Note that MTC-CBT-70T extends86mm (3.4 in) from the back of the CBT cabinet.Available in black or white (-WH).Specifications:Transformer Taps:120W, 60W, 30W (and 15W at 70V only)Connection:CE-compliant barrier strip terminals. Terminals accept up to8mm outside 4 mm inside open-lug (#6 or #8) plus bare wireup to 2.5 mm2(12 AWG).TERMINALS:Terminal 1 = Common (black wire from transformer)Terminal 2 = 120W @ 70V, N/C @ 100V (orange wire from transformer)Terminal 3 = 60W @ 70V, 120W@100V (purple wire from transformer)Terminal 4 = 30W @ 70V, 60W @ 100V (blue wire from transformer)Terminal 5 = 15W @ 70V, 30W @ 100V (white wire from transformer)Terminal 6 = N/C (no wire from transformer)Terminal 7 = + Output to loudspeaker + terminal (yellow wire fromtransformer)Terminal 8 = –Output to loudspeaker - terminal (green wire fromtransformer)Maximum Insertion Loss= Less than 1 dB at any tap.Gland Nuts:Two total. One gland nut by the transformer selectionterminals for cable from amplifier and one gland nut by thetransformer secondary terminals (green and yellow wires) foroutput to speaker terminals. It is recommended to orient glandnuts toward bottom of enclosure.Watertight seal requiresround jacketed cable with outside diameter between 4.0 mm(0.16 in) and 9.0 mm (0.36in).Mounting to Speaker Cabinet:Two holes in the back of the enclosure 70 mm (2.75 in) apart.Insert included 6 mm screw from inside MTC-CBT-70Tenclosure, using 1 flat washer and 1 lock washer, into theside-by-side M6 insert points on the back of the CBT70J-1 orCBT70JE-1 cabinet.Enclosure Material:Fiberglass filled ABS.Environmental Capability:IP-55 rated, per IEC529. UV, moisture and salt-spray resistant.Agency Rating:Transformer UL registered per UL1876, Isolating Signal andFeedback Transformers for Use in Electronic Equipment.Dimensions (H x W x D):157 x 114 x 86 mm (6.2 x 4.5 x 3.4 in) including gland nuts.128 mm (5.0 in) enclosure height for enclosure only.Net Weight: 1.13 kgs (2.5 lbs)Shipping Weight: 1.36 kgs (3.0 lbs)Included Accessories:Two 6 mm (x 15mm length x 1.0 thread pitch) bolts, flatwashers & lock washersJBL continually engages in research related to product improvement. Some materials, production methods and designrefinements are introduced into existing products without notice as a routine expression of that philosophy. For this reason, any current JBL product may differ in some respect from its published description, but will always equal or exceed the original design specifications unless otherwise stated.Cable not included.SS MTC-CBT-70T CRP 01/13᭤MTC-CBT-70T Bolt-On Transformer Module for CBT 70 Models DimensionsJBL Professional8500 Balboa Boulevard, P.O. Box 2200Northridge, California 91329 U.S.A.© Copyright 2013 JBL ProfessionalWiring DiagramMounting onto SpeakerShown mounted to top insert points of CBT 70J-1.。
Yokogawa TXDIN70 双通道双通道DIN筒温度传感器转换器说明书
Dual DIN Rail Temperature TransmitterTXDIN70U P rovides Two-ChannelTransmitters or SignalIsolators (4 to 20 or 0 to 20 mA)U P rogrammable Input Typesand Ranges with the OptionalExternal DisplayU D IN Rail MountedU U se UngroundedThermocouple OnlyU U niversal Power SupplyIt provides 2 channels of configurable inputs, and supports multiple voltage, RTD, thermocouple inputs with auto reference junction compensation. Each channel has its own digital filtering and can adjust its filtering degree.• G enerates two isolated current outputs, 4 to 20 or0 to 20 mA• R ange of retransmission output can be freely defined • T he model is DIN rail mounted. Its width is only22.5 mm• C an be easily configured by connecting to ourE8 handset display• U niversal power supply of 100 to 240 Vac or 24 VdcSpecificationsInput TypeThermocouple: K, S, R, E, J, T, B, N, WRe5-WRe26 RTD: Pt100, Cu50Linear Voltage: 0 to 20 mV, 0 to 60 mV, 0 to 100 mV, 0 to 1V, 0.2 to 1VInstrument Input Range:Style K: -50 to 1300°CStyle S: -50 to 1700°CStyle R: -50 to 1700°CStyle T: -200 to 350°CStyle E: 0 to 1000°CStyle J: 0 to 1200°CStyle B*: 0 to 1800°CStyle N: -50 to 1300°CStyle WRe5%WRe26: 0 to 2300°CStyle Pt100: -200 to 900°C* Note: B thermocouple obtains the measurement accuracy only at the range of 400 to 1800°C. It’s measurement from 60 to 400°C is less accurate.Linear Input: -9990 to 30,000 units defined by user Retransmission Accuracy: 0.3% full scale ±1 digit (including input and output error)Output Specification: Can be freely defined in therange of 0 to 22 mA with maximum output voltage ≥11V Temperature Drift: ≤0.015%FS/°C (including thetemperature drift of input and output)Electromagnetic Compatibility (EMC): ±4 KV/5 KHz according to IEC61000-4-4 (EFT); 4 KV according toIEC61000-4-5Isolation Withstanding Voltage: Voltage betweenpower, signal input and output terminals ≥2300 VdcPower Supply: 100 to 240 Vac, -15%, +10%/50 to 60 Hz; or 24 VdcPower Consumption:≤3WOperating Ambient Temperature: -10 to 60°C;humidity ≤90% RHDimensions: 100 H x 22.5 W x 100 mm D(3.9 x 0.89 x 3.9")Weight: 85 g (0.18 lb)Ordering Example: TXDIN70, DIN rail temperature transmitter and TXDIN70-DISPLAY, plug-in display.TXDIN70-DISPLAY,external plug-indisplay.Both shown smallerthan actual size.TXDIN70, DIN railtemperaturetransmitter.1。