2SK1478资料

Drain current ID (A)
PD Ta
50
Area of safe operation (ASO)
100 Non repetitive pulse TC=25˚C IDP ID t=100µs 1ms
Allowable power dissipation PD (W)
(1) TC=Ta (2) Without heat sink (PD=2W) 40
Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss
1
元器件交易网
Power F-MOS FETs
ID VDS
16 14 12 10 8 6 4 6V 2 0 0 5 10 15 20 5V 25 30 7V
250
Drain current ID (A)
Ciss
8
200
td(off)
6
Coss Crss
150 ton tf
41002 Nhomakorabea50
0 0 2 4 6 8 10 12
200
250
0 0 5 10 15 20 25
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
元器件交易网
Power F-MOS FETs
2SK1478
Silicon N-Channel Power F-MOS FET
s Features
q Low ON-resistance RDS(on): RDS(on) = 0.4Ω (typ.) q High-speed switching: tf = 44ns (typ.) q No secondary breakdown q High breakdown voltage, large allowable power dissipation
10000
Ciss, Coss, Crss VDS
300
f=1MHz TC=25˚C
ton, tf, td(off) ID
VDD=100V VGS=10V TC=25˚C
Switching time ton,tf,td(off) (ns)
3000 1000 300 100 30 10 3 1 0 50 100 150
30 10 3
30
(1)
Drain current ID (A)
DC 1 0.3 0.1 0.03
20
100ms 10ms
10 (2) 0 0 20 40 60 80 100 120 140 160 0.01 1 3 10 30 100 300 1000
Ambient temperature Ta (˚C)
12
2SK1478
| Yfs | ID
Forward transfer admittance |Yfs| (S)
RDS(on) ID
VDS=10V TC=25˚C
Drain to source ON-resistance RDS(on) (Ω)
0.6 VGS=10V TC=25˚C 0.5
TC=25˚C
Drain to source voltage VDS (V)
2
ID VGS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
12 VDS=10V TC=25˚C 10
unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
7.5±0.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
0.5 +0.2 –0.1 0.8±0.1
2.54±0.25
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VDSS VGSS ID IDP PD Tch Tstg Ratings 250 ±20 ±8 ±16 40 2 150 −55 to +150 Unit V V A A W °C °C
5.08±0.5 1 2
1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a)
3
s Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Output capacitance (Common Source) Turn-on time Fall time Turn-off time (delay time) Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 200V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 5A VDS = 25V, ID = 5A VDS = 10V, VGS = 0, f = 1MHz 2.7 250 1 0.4 4.7 1100 200 60 VGS = 10V, ID = 5A VDD = 100V, RL = 20Ω 72 44 136 5 0.6 min typ max 0.1 ±1 Unit mA µA V V Ω S pF pF pF ns ns ns
10
Drain current ID (A)
VGS=10V
9V
8V
8
0.4
6
0.3
4
0.2
2
0.1
0 0 5 10 15 20 25
0 0 2 4 6 8 10
Drain to source voltage VDS (V)
Drain current ID (A)
Drain current ID (A)