TLP550光耦

000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
IF = 0→ 16 mA, VCC = 5V, RL = 4.1 kΩ
―
0.3 0.8
(Note 7) Rank 0: RL = 1.9 kΩ ―
0.5 0.8
IF = 16→ 0 mA, VCC = 5V, RL = 4.1 kΩ
―
1.0 2.0
(Note 7) Rank 0: RL = 1.9 kΩ ―
1.0
1.2
1.4
1.6
1.8
2.0
Forward voltage VF (V)
IOH (1) – Ta
0
100
50 30
10
5 3
1
0.6
0
40
80
120
160
Ambient temperature Ta (℃)
IO / IF – IF
100 VCC = 5V
VO = 0.4V 50
30 Ta = -25°C
TOSHIBA Weight: 0.54 g
11−10C4
Pin Configuration (top view)
1
8
1 : N.C.
2 : Anode
2
7
3 : Cathode
4 : N.C.
3
6
5 : Emitter 6 : Collector
7 : N.C.
4
5
8 : Cathode
Schematic
TLP550
Symbol
(Note 1)
IF
(Note 2)
IFP
(Note 3) (Note 4)
(Note 5) (Note 6)
IFPT
VR PD
IO IOP VCC VO PO
Topr Tstg Tsol BVS
Rating 25 50 1 5 45 8 16
-0.5~15 -0.5~15
100 -55~100 -55~125
TLP550
∆VF / ∆Ta – IF
-2.6
-2.4
-2.2
-2.0
-1.8
-1.6 -1.4
0.1
10 5 3 1
0.5 0.3
0.3 0.5
1
35
10
30
Forward current IF (mA)
lO – IF
VCC = 5V VO = 0.4V Ta = 25°C
0.1
0.05 0.03
―
IOH
IF = 0 mA, VCC = VO = 15 V Ta = 70°C
―
ICCH IO / IF
VOL RS
IF = 0 mA, VCC = 15 V
―
Ta = 25°C
10
IF = 16 mA VCC = 4.5 V VO = 0.4 V
Rank : 0 19
Ta = 0~70°C
5
Rank : 0 15
VCC=5V
1
8
IF
2
7
RL
3
6
VO
4
5
Output monitor
VCM
Pulse gen
ZO=50Ω 160 (V)
CMH= tf (µs)
160 (V) , CML=
tf (µs)
VCM tr
VO (IF = 0mA)
VO (IF = 16mA)
(Note 9) Maximum electrostatic discharge voltage for any pins: 100V (C = 200pF, R = 0)
Symbol
Test condition
Min.
VF ∆VF /∆Ta
IR CT
IF = 16 mA IF = 16 mA VR = 5 V VF = 0, f = 1MHz
1.45 ― ― ―
IOH (1)
IF = 0 mA, VCC = VO = 5.5 V
―
IOH (2)
IF = 0 mA, VCC = VO = 15 V
TLP550
VO – IF
5
IF
VCC = 5V
4
RL
VO
3
Ta=25°C
2
RL=2kΩ
3.9kΩ 10kΩ 1
0
0
4
8
12
16
20
24
Forward current IF (mA)
Propagation delay time tpLH, tpHL (µs)
6
2002-09-25
TLP550
RESTRICTIONS ON PRODUCT USE
90% 10% tf
200V
0V
5V 2V 0.8V VOL
4
2002-09-25
Forward current IF (mA)
High level output current IOH (µA)
100 Ta = 25°C
50 30
IF – VF
10
5 3
1
0.5 0.3
0.1
0.05 0.03
0.01
10
100°C
5
25°C
3
1
0.3 0.5
1
35
10
Forward current IF (mA)
30 50
Normalized IO / IF
Output current IO (mA)
Forward voltage temperature coefficient ∆VF / ∆Ta (mV / ℃)
TLP550
Unit in mm
TLP550 constructs a high emitting diode and a one chip photo diode− transistor. TLP550 has no base connection, and is suitable for application at noisy environmental condition. This unit is 8−lead DIP package.
Output current Peak output current Supply voltage Output voltage Output power dissipation
Operating temperature range Storage temperature range Lead solder temperature (10s) Isolation voltage (AC, 1min., R.H. = 40~60%)
IF 2
VF 3
ICC VCC
8
IO 6 VO GND 5
1
2002-09-25
Detector
LE D
Maximum Ratings (Ta = 25°C)
Characteristic
Forward current Pulse forward current Peak transient forward current Reverse voltage Diode power dissipation
0.01 0.1
0.3 0.5 1
3 5 10
30 50 100 300
Forward current IF (mA)
IO / IF – Ta
1.2
1.0 0.8
0.6
Normalized To :
0.4
IF = 16mA