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TDA7350A, 规格书,Datasheet 资料

1/23TDA7350AFebruary 20051General Features■VERY FEW EXTERNAL COMPONENTS ■NO BOUCHEROT CELLS■NO BOOSTRAP CAPACITORS ■HIGH OUTPUT POWER■NO SWITCH ON/OFF NOISE■VERY LOW STAND-BY CURRENT ■FIXED GAIN (30dB STEREO)■PROGRAMMABLE TURN-ON DELAY1.1PROTECTIONS■OUTPUT AC-DC SHORT CIRCUIT TO GROUND AND TO SUPPLY VOLTAGE ■VERY INDUCTIVE LOADS■LOUDSPEAKER PROTECTION■OVERRATING CHIP TEMPERATURE ■LOAD DUMP VOLTAGE■FORTUITOUS OPEN GROUND ■ESD2DescriptionThe TDA7350A is a new technology class AB Au-dio Power Amplifier in the Multiwatt® package de-signed for car radio applications.Thanks to the fully complementary PNP/NPN out-put configuration the high power performance of the TDA7350A is obtained without bootstrap ca-pacitors.A delayed turn-on mute circuit eliminates audible on/off noise, and a novel short circuit protection system prevents spurious intervention with highly inductive loads.22W BRIDGE-STEREO AMPLIFIER FOR CAR RADIOFigure 2. Application Circuit (Bridge)Rev. 1Figure 1. PackageTable 1. Order CodesPart Number Package TDA7350AMultiwatt11TDA7350A2/23Figure 3. Pin connection (Top view)Table 2. Absolute Maximum RatingsTable 3. Thermal DataSymbol ParameterValue Unit V S Operating Supply Voltage 18V V S DC Supply Voltage28V V S Peak Supply Voltage (t = 50ms)40V I O Output Peak Current (non rep. t = 100µs)5A IO Output Peak Current (rep. freq. > 10Hz)4A P tot Power Dissipation at T case = 85°C 36W T stg , T jStorage and Junction Temperature-40 to 150°CSymbol ParameterValue Unit R thj-caseThermal Resistance Junction-caseMax.1.8°C/WTable 4. Electrical Characteristcs(Refer to the test circuits, T amb = 25°C, V S = 14.4V, f = 1KHz unless otherwise specified)Symbol ParameterTest ConditionMin. Typ.Max.Unit V S Supply Voltage Range 818 V I d Total Quiescent Drain Current stereo configuration120mA A SBStand-by attenuation6080dBI SB Stand-byCurrent 100 µAT sd Thermal Shut-down JunctionTemperature150 °C3/23TDA7350A(*) Curve A(**) 22Hz to 22KHzSTEREO P oOutput Power (each channel)d = 10% R L = 2ΩR L = 3.2ΩR L = 4Ω711 8 6.5 W W W d = 10%; V S = 13.2V R L = 2ΩR L = 3.2ΩR L = 4Ω9 6.5 5.5W W Wd DistortionPo = 0.1 to 4W; R L = 3.2Ω0.5 %SVRSupply Voltage RejectionR g = 10k Ω f = 100Hz C3 = 22µF C3 = 100µF 45 5057dB dB C T Crosstalkf = 1KHz f = 10KHz45 5550dB dB R I Input Resistance 30 50K ΩG V Voltage Gain 27 29 31 dBG VVoltage Gain Match1 dBE IN Input Noise Voltage R g = 50Ω(*)R g = 10K Ω(*)R g = 50Ω(**)R g = 10K Ω(**) 1.5222.77 µVµV µV µVBRIDGE P oOutput Powerd = 10%; R L = 4Ω d = 10%; R L = 3.2Ω 16 2022W W d = 10%; V S = 13.2V R L = 4Ω R L = 3.2Ω17.5 19W W d Distortion P o = 0.1 to 10W; R L = 4W1 % V OS Output Offset Voltage 250mV SVRSupply Voltage RejectionR g = 10k Ω f = 100Hz C3 = 22µF C3 = 100µF45 5057dB dB R I Input Resistance 50K ΩG V VoltageGain 33 35 37 dBE IN InputNoise Voltage R g = 50Ω(*)R g = 10K Ω(*)R g = 50Ω(**)R g = 10K Ω(**)22.5 2.7 3.2µV µV µV µVTable 4. Electrical Characteristcs (continued)(Refer to the test circuits, T amb = 25°C, V S = 14.4V, f = 1KHz unless otherwise specified)Symbol ParameterTest ConditionMin.Typ.Max.UnitTDA7350A4/23Figure 4. STEREO Test and Appication CircuitFigure 5. P.C. Board and Layout (STEREO) of the circuit of fig. 45/23TDA7350AFigure 6. BRIDGE Test and Appication CircuitFigure 7. P.C. Board and Layout (BRIDGE) of the circuit of fig. 6TDA7350A6/23Table 5. Recommended Values of the External Components (ref. to the Stereo Test and Application Circuit)ComponentRecommendedValuePurpose Larger than the Recomm.ValueSmaller than the Recomm.ValueC10.22µFInputDecoupling (CH1)——C20.22µF InputDecoupling(CH2)——C3100µF Supply VoltageRejection Filtering Capacitor Longer Turn-On Delay TimeWorse Supply Voltage Rejection.Shorter Turn-On Delay Time Danger of Noise (POP)C422µF Stand-ByON/OFF Delay Delayed T urn-Off by Stand-By SwitchDanger of Noise (POP)C5220µF (min) Supply By-Pass Danger of Oscillations C6100nF (min)Supply By-PassDanger of OscillationsC72200µF OutputDecoupling CH2- Decrease of Low Frequency Cut Off- Longer Turn On Delay- Increase of Low Frequency Cut Off- Shorter T urn On DelayFigure 8. Output Power vs. Supply Voltage (Stereo)Figure 9. Output Power vs. Supply Voltage (Stereo)Figure 10. Output Power vs. Supply Voltage (Stereo)Figure 11. Output Power vs. Supply Voltage (Bridge)7/23TDA7350AFigure 12. Output Power vs. Supply Voltage(Bridge)Figure 13. Drain Current vs Supply Voltage (Stereo)Figure 14. Distortion vs Output Power (Stereo)Figure 15. Distortion vs Output Power (Stereo)Figure 16. Distortion vs Output Power (Stereo)Figure 17. Distortion vs Output Power(Bridge)TDA7350A8/23Figure 18. SVR vs. Frequency & C SVR (Stereo)Figure 19. SVR vs. Frequency & C SVR ;(Stereo)Figure 20. SVR vs. Frequency & C SVR ;(Bridge)Figure 21. SVR vs. Frequency & C SVR ;(Bridge)Figure 22. Crosstalk vs. Frequency (Stereo)Figure 23. Power Dissipation & Efficiency vs.Output Power (Stereo)9/23TDA7350AFigure 24. Power Dissipation & Efficiency vs. Output Power (Stereo)Figure 25. Power Dissipation & Efficiency vs. Output Power (Bridge)Figure 26. Power Dissipation & Efficiency vs. Output Power (Bridge))3Amplifier OrganizationThe TDA7350A has been developed taking care of the key concepts of the modern power audio am-plifier for car radio such as: space and costs sav-ing due to the minimized external count, excellent electrical performances, flexibility in use, superior reliability thanks to a built-in array of protections.As a result the following performances has been achieved:■NO NEED OF BOOTSTRAP CAPACITORS EVEN AT THE HIGHEST OUTPUT POWER LEVELS■ABSOLUTE STABILITY WITHOUT EXTERNAL COMPENSATION THANKS TO THE NNOVA-TIVE OUT STAGE CONFIGURATION, ALSO ALLOWING INTERNALLY FIXED LOSED LOOP LOWER THAN COMPETITORS■LOW GAIN (30dB STEREO FIXED WITHOUT ANY EXTERNAL COMPONENTS) IN ORDER TO MINIMIZE THE OUTPUT NOISE AND OP-TIMIZE SVR■SILENT MUTE/ST-BY FUNCTION FEATUR-ING ABSENCE OF POP ON/OFF NOISE ■HIGH SVR■STEREO/BRIDGE OPERATION WITHOUT ADDITION OF EXTERNAL COMPONENT ■AC/DC SHORT CIRCUIT PROTECTION (TO GND, TO V S , ACROSS THE LOAD)■LOUDSPEAKER PROTECTION ■DUMP PROTECTION ■ESD PROTECTION4Block Description4.1PolarizationThe device is organized with the gain resistors di-rectly connected to the signal ground pin i.e. with-out gain capacitors (fig. 27).The non inverting inputs of the amplifiers are con-nected to the SVR pin by means of resistor divid-ers, equal to the feedback networks. This allows the outputs to track the SVR pin which is sufficient-ly slow to avoid audible turn-on and turn-off tran-sients.4.2SVRThe voltage ripple on the outputs is equal to the one on SVR pin: with appropriate selection of CS-VR, more than 55dB of ripple rejection can be ob-tained.TDA7350A10/234.3Delayed Turn-on (muting)The CSVR sets a signal turn-on delay too. A circuit is included which mutes the device until the voltage on SVR pin reaches ~2.5V typ (fig. 28). The mute function is obtained by duplicating the input differential pair (fig. 29): it can be switched to the signal source or to an internal mute input. This feature is necessary to prevent transients at the inputs reaching the loudspeaker(s) immediately after power-on).Fig. 28 represents the detailed turn-on transient with reference to the stereo configuration. At the power-on the output decoupling capacitors are charged through an internal path but the device itself remains switched off (Phase 1 of the represented diagram).When the outputs reach the voltage level of about 1V (this means that there is no presence of short cir-cuits) the device switches on, the SVR capacitor starts charging itself and the output tracks exactly the SVR pin.During this phase the device is muted until the SVR reaches the "Play" threshold (~2.5V typ.), after that the music signal starts being played.4.4Stereo/Bridge SwitchingThere is also no need for external components for changing from stereo to bridge configuration (figg. 27-30). A simple short circuit between two pins allows phase reversal at one output, yet maintaining the qui-escent output voltage.4.5Stand-byThe device is also equipped with a stand-by function, so that a low current, and hence low cost switch,can be used for turn on/off.4.6StabilityThe device is provided with an internal compensation wich allows to reach low values of closed loop gain.In this way better performances on S/N ratio and SVR can be obtained.Figure 27. Block Diagram; Stereo ConfigurationFigure 28. Turn-on Delay CircuitFigure 29. Mute Function DiagramFigure 30. Block Diagram; Bridge ConfigurationFigure 31. ICV - PNP Gain vs. I C Figure 32. ICV - PNP V CE(sat) vs. I CFigure 33. ICV - PNP cut-off frequency vs. I C4.7OUTPUT STAGEPoor current capability and low cutoff frequency are well known limits of the standard lateral posite PNP-NPN power output stages have been widely used, regardless their high saturation drop. This drop can be overcome only at the ex-pense of external components, namely, the boot-strap capacitors. The availability of 4A isolated collector PNP (ICV PNP) adds versatility to the de-sign. The performance of this component, in terms of gain, V CEsat and cut-off frequency, is shown in fig. 31, 32, 33 respectively. It is realized in a new bipolar technology, characterized by topbottomisolation techniques, allowing the implementationof low leakage diodes, too. It guarantees BV CEO > 20V and BV CBO > 50V both for NPN and PNP transis-tors. Basically, the connection shown in fig. 34 has been chosen. First of all because its voltage swing is rail-to-rail, limited only by the V CEsat of the output transistors, which are in the range of 0.3Ω each. Then, the gain VOUT/VIN is greater than unity, approximately 1+R2/R1. (VCC/2 is fixed by an auxiliary amplifier common to both channel). It is possible, controlling the amount of this local feedback, to force the loop gain (A . β) to less than unity at frequencies for which the phase shift is 180°. This means that the output buffer is intrinsically stable and not prone to oscillation.Figure 34. The New Output StageIn contrast, with the circuit of fig. 35, the solution adopted to reduce the gain at high frequencies is the use of an external RC network.4.8AMPLIFIER BLOCK DIAGRAMThe block diagram of each voltage amplifier is shown in fig. 36. Regardless of production spread, the cur-rent in each final stage is kept low, with enough margin on the minimum, below which cross-over distortion would appear.Figure 35. A Classical Output StageFigure 36. Amplifier Block Diagram4.9BUILT-IN PROTECTION SYSTEMS4.9.1Short Circuit ProtectionThe maximum current the device can deliver can be calculated by considering the voltage that may be present at the terminals of a car radio amplifier and the minimum load impedance.Apart from consideration concerning the area of the power transistors it is not difficult to achieve peak cur-rents of this magnitude (5A peak).However, it becomes more complicated if AC and DC short circuit protection is also required.In particular, with a protection circuit which limits the output current following the SOA curve of the output transistors it is possible that in some conditions (highly reactive loads, for example) the protection circuit may intervene during normal operation. For this reason each amplifier has been equipped with a protection circuit that intervenes when the output current exceeds 4A.Fig 37 shows the protection circuit for an NPN power transistor (a symmetrical circuit applies to PNP).The VBE of the power is monitored and gives out a signal,available through a cascode.This cascode is used to avoid the intervention of the short circuit protection when the saturation is below a given limit.The signal sets a flip-flop which forces the amplifier outputs into a high impedance state.In case of DC short circuit when the short circuit is removed the flip-flop is reset and restarts the circuit (fig. 41). In case of AC short circuit or load shorted in Bridge configuration, the device is continuously switched in ON/OFF conditions and the current is limited.Figure 37. Circuitry for Short Circuit Detection4.9.2Load Dump Voltage SurgeThe TDA7350A has a circuit which enables it to withstand a voltage pulse train on pin 9, of the type shown in fig. 39.If the supply voltage peaks to more than 40V, then an LC filter must be inserted between the supply and pin 9, in order to assure that the pulses at pin 9 will be held within the limits shown.A suggested LC network is shown in fig. 38. With this network, a train of pulses with amplitude up to 120V and width of 2ms can be applied at point A. This type of protection is ON when the supply voltage (pulse or DC) exceeds 18V. For this reason the maximum operating supply voltage is 18V.Figure 38.Figure 39.4.9.3Polarity InversionHigh current (up to 10A) can be handled by the de-vice with no damage for a longer period than the blow-out time of a quick 2A fuse (normally con-nected in series with the supply). This features is added to avoid destruction, if during fitting to the car, a mistake on the connection of the supply is made.4.10Open GroundWhen the radio is in the ON condition and the ground is accidentally opened, a standard audio amplifier will be damaged. On the TDA7350A pro-tection diodes are included to avoid any damage.4.10.1DC VoltageThe maximum operating DC voltage for the TDA7350A is 18V. However the device can with-stand a DC voltage up to 28V with no damage. This could occur during winter if two batteries are series connected to crank the engine.4.10.2Thermal Shut-downThe presence of a thermal limiting circuit offers the following advantages:1)an overload on the output (even if it is perma-nent), or an excessive ambient temperature can be easily withstood.2)the heatsink can have a smaller factor of safetycompared with that of a conventional circuit.There is no device damage in the case of exces-sive junction temperature: all happens is that P o (and therefore P tot) and Id are reduced.The maximum allowable power dissipation de-pends upon the size of the external heatsink (i.e. its thermal resistance); Fig. 40 shows the dissi-pable power as a function of ambient temperature for different thermal resistance.Figure 40. Maximum Allowable Power Dissipation vs. Ambient TemperatureThe TDA7350A guarantees safe operations even for the loudspeaker in case of accidental shortcir-cuit.Whenever a single OUT to GND, OUT to V S short circuit occurs both the outputs are switched OFFso limiting dangerous DC current flowing through the loudspeaker.Figure 41. Restart Circuit5Application HintsThis section explains briefly how to get the best from the TDA7350A and presents some applica-tion circuits with suggestions for the value of the components.These values can change depending on the characteristics that the designer of the car radio wants to obtain,or other parts of the car radio that are connected to the audio block.To optimize the performance of the audio part it is useful (or indispensable) to analyze also the parts outside this block that can have an interconnection with the amplifier.This method can provide components and system cost saving.5.1Reducing Turn On-Off PopThe TDA7350A has been designed in a way that the turn on(off) transients are controlled through the charge(discharge) of the Csvr capacitor.As a result of it, the turn on(off) transient spectrum contents is limited only to the subsonic range.The following section gives some brief notes to get the best from this design feature(it will refer mainly to the stereo application which appears to be in most cases the more critical from the pop viewpoint.The bridge connection in fact,due to the common mode waveform at the outputs,does not give pop effect).5.2TURN-ONFig. 42 shows the output waveform (before and af-ter the "A" weighting filter) compared to the value of C svr.Better pop-on performance is obtained with higher C svr values (the recommended range is from 22µF to 220µF).The turn-on delay (during which the amplifier is in mute condition) is a function essentially of : C out, C svr. Being:T1 ≈ 120 · C outT2 ≈ 1200 · C svrThe turn-on delay is given by:T1+T2 STEREOT2 BRIDGEThe best performance is obtained by driving the st-by pin with a ramp having a slope slower than 2V/ ms.Figure 42.a) C svr = 22 µFb) C svr = 47 µFc) C svr = 100 µF5.3TURN-OFFA turn-off pop can occur if the st-by pin goes low with a short time constant (this can occur if other car radio sections, preamplifiers,radio.. are sup-plied through the same st-by switch).This pop is due to the fast switch-off of the internalcurrent generator of the amplifier.If the voltage present across the load becomes rapidly zero (due to the fast switch off) a small pop occurs, depending also on Cout,Rload.The parameters that set the switch off time constant of the st-by pin are:■the st-by capacitor (Cst-by)■the SVR capacitor (Csvr)■resistors connected from st-by pin to ground (Rext)The time constant is given by :T ≈ Csvr · 2000Ω // Rext + Cst-by · 2500Ω // RextThe suggested time constants are :T > 120ms with C out =1000µF, R L = 4ohm,stereoT > 170ms with C out = 2200µF, R L = 4ohm,stereoIf Rext is too low the Csvr can become too high and a different approach may be useful (see next section). Figg 43, 44 show some types of electronic switches (µP compatible) suitable for supplying the st-by pin (it is important that Qsw is able to saturate with V CE≤ 150mV).Also for turn off pop the bridge configuration is superior, in particular the st-by pin can go low faster.5.4Global Approach to Solving Pop Problem by Using the Muting/Turn On Delay FunctionIn the real case turn-on and turn-off pop problems are generated not only by the power amplifier, but also (very often) by preamplifiers,tone controls, radios etc. and transmitted by the power amplifier to the loud-speaker.A simple approach to solving these problems is to use the mute characteristics of the TDA7350A. If the SVR pin is at a voltage below 1.5 V, the mute attenuation (typ)is 30dB .The amplifier is in play mode when Vsvr overcomes 3.5 V.With the circuit of fig 45 we can mute the amplifier for a time Ton after switch-on and for a time Toff after switch-off. During this period the circuitry that precedes the power amplifier can produce spurious spikes that are not transmitted to the loudspeaker.This can give back a very simple design of this circuitry from the pop point of view. A timing diagram of this circuit is illustrated in fig 46.Other advantages of this circuit are:–A reduced time constant allowance of stand-by pin turn off. Consequently it is possible to drive all the car-radio with the signal that drives this pin.–A better turn-off noise with signal on the output. To drive two stereo amplifiers with this circuit it is possible to use the circuit of fig 47.Figure 43.Figure 45.Figure 46.5.5Balance Input In Bridge ConfigurationA helpful characteristic of the TDA7350A is that, in bridge configuration, a signal present on both the input capacitors is amplified by the same amount and it is present in phase at the outputs, so this signal does not produce effects on the load.The typical value of CMRR is 46 dB.Looking at fig 48, we can see that a noise signal from the ground of the power amplifier to the ground of the hypothetical preamplifier is amplified of a factor equal to the gain of the amplifier (2 · Gv). Using a con-figuration of fig. 49 the same ground noise is present at the output multiplied by the factor 2 · Gv/200. This means less distortion,less noise (e.g. motor cassette noise ) and/or a simplification of the layout of PC board.The only limitation of this balanced input is the maximum amplitude of common mode signals (few tens of millivolt) to avoid a loss of output power due to the common mode signal on the output, but in a large num-ber of cases this signal is within this range.5.6High Gain, Low Noise ApplicationThe following section describes a flexible preamplifier having the purpose to increase the gain of the TDA7350A.Figure 48.Figure 49.A two transistor network (fig. 50) has been adopted whose components can be changed in order to achieve the desired gain without affecting the good performances of the audio amplifier itself.The recommended values for 40 dB overall gain are :Table 6.Resistance Stereo StereoR110KΩ10KΩR2 4.3KΩ16KΩR310KΩ24KΩR450KΩ50KΩFigure 50.TDA7350A 6Package InformationFigure 51. Multiwatt11 (Vertical) Mechanical Data & Package Dimensions21/23TDA7350ATable 7. Revision HistoryDate Revision Description of Changes February 20051First Issue22/23TDA7350A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2005 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America23/23。

Multisim里的NPN三极管参数资料大全

提醒您:你可以按Ctrl+F来查找你想要的资料.如你想查找频率敏感的三极管,那么你可以搜索关键词:"MHz"晶体管型号:2N1711(S)生产厂家:德国AEG公司,DIT,德国椤茨标准电器公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:75V最大电流允许值:0.5A最大耗散率:0.8W放大倍数:未知放大倍数最大工作频率:>70MHZ引脚数: 3可代换的型号:BC140,BC141,BC300,BC301,2N1990,晶体管型号:2N2102(A.L.S)生产厂家:美国国民半导体公司,美国无线电公司,SEM,美国得克萨斯仪表公司,德国凡尔伏公司制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S)封装形式:直插封装极限工作电压:120V最大电流允许值:1A最大耗散率:1W放大倍数:未知放大倍数最大工作频率:>120MHZ引脚数: 3可代换的型号:BC300,BSS42,BSS43,BSV84,BSW67,BSX47,2N2243,2N2405,2N3019,2N3020,3DK 03E,晶体管型号:2N2218(A)生产厂家:SEM,德国电子元件股份公司,美国得克萨斯仪表公司,美国晶体管有限公司,德国凡尔伏公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:60V最大电流允许值:0.8A最大耗散率:0.8W放大倍数:β>40最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC141,BC301,BFX96A,BSW51,BSW52,BSW53,BSW54,BSX45,BSX59,BSX60,BSX61, 2N3444,3DK3 D,晶体管型号:2N2219生产厂家:德国AEG公司,DIT,美国、法国费兰第有限公司,美国通用电器公司,德国椤茨标准电器公司,美国摩托罗拉半导体公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:60V最大电流允许值:0.8A最大耗散率:0.8W放大倍数:β300最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC140,BC302,BFX97,BSW52,BSX45,3DK3D,晶体管型号:2N2219(A)生产厂家:SEM,德国电子元件股份公司,美国得克萨斯仪表公司,美国晶体管有限公司,德国凡尔伏公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:60V最大电流允许值:0.8A最大耗散率:0.8W放大倍数:β>100最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC141,BC301,BFX97A,BSW51,BSW52,BSW53,BSW54,BSX45,BSX59,BSX60,BSX61, 2N3444,3DK3 D,晶体管型号:2221生产厂家:未知生产厂家制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:60V最大电流允许值:0.8A最大耗散率:0.625W放大倍数:β=40-120最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:2N2221,晶体管型号:2N2222生产厂家:德国AEG公司,DIT,美国、法国费兰第有限公司,美国通用电器公司,德国椤茨标准电器公司,美国摩托罗拉半导体公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:60V最大电流允许值:0.8A最大耗散率:0.5W放大倍数:β=300最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC546,BC639,BFX95,BSW62,BSW85,3DK3D,3DG2222,晶体管型号:2N2222A生产厂家:SEM,德国电子元件股份公司,美国得克萨斯仪表公司,美国晶体管有限公司,德国凡尔伏公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:60V最大电流允许值:0.8A最大耗散率:0.5W放大倍数:β>100最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC546,BC637,BFX95A,BSS40,BSS41,BSW61,BSW62,BSW63,BSW64,BSW85,2N4014 ,3DK3D,晶体管型号:2N2369(A)生产厂家:DIT,德国椤茨标准电器公司,美国摩托罗拉半导体公司,美国晶体管有限公司,德国凡尔伏公司制作材料:Si-NPN性质:高速开关(SS)封装形式:直插封装极限工作电压:40V最大电流允许值:0.2A最大耗散率:0.36W放大倍数:β>40最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX92,BSX93,B SY62,BSY63,2N 3227,2N3261,2SC2901,3DG84B,晶体管型号:2N2712生产厂家:美国通用电器公司,SEM,美国史普拉各电气公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:18V最大电流允许值:0.1A最大耗散率:0.12W放大倍数:β>75最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221 ,2N2222,3DG120 C,晶体管型号:2N1714生产厂家:SEM,美国得克萨斯仪表公司,美国晶体管有限公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:90V最大电流允许值:0.75A最大耗散率:0.8W放大倍数:β>20最大工作频率:>16MHZ引脚数: 3可代换的型号:BC141,BC301,BSS42,BSS43,BSX46,BSX47,2N5320,2N4239,3DK3D, 晶体管型号:2N2923生产厂家:SEM,法国巴黎珊斯公司,美国通用电器公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.1A最大耗散率:0.2W放大倍数:β>90最大工作频率:300MHZ引脚数: 3可代换的型号:BC168,BC183,BC238,BC548,晶体管型号:2N2924生产厂家:SEM,法国巴黎珊斯公司,美国通用电器公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.1A最大耗散率:0.2W放大倍数:β>150最大工作频率:300MHZ引脚数: 3可代换的型号:BC168,BC183,BC238,BC548,晶体管型号:2N2925生产厂家:SEM,法国巴黎珊斯公司,美国通用电器公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.1A最大耗散率:0.2W放大倍数:β>235最大工作频率:300MHZ引脚数: 3可代换的型号:BC168,BC183,BC238,BC548,晶体管型号:2N3019(S)生产厂家:德国AEG公司,法国巴黎珊斯公司,德国电子元件股份公司,美国摩托罗拉半导体公司,美国晶体管有限公司,德国凡尔伏公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:140V最大电流允许值:1A最大耗散率:0.8W放大倍数:β>100最大工作频率:>100MHZ引脚数: 3可代换的型号:BSS43,BSW68,2SC1860,2N3440,2N3500,2N3501,2G072C,晶体管型号:2N3020(S)生产厂家:德国AEG公司,法国巴黎珊斯公司,德国电子元件股份公司,美国摩托罗拉半导体公司,美国晶体管有限公司,德国凡尔伏公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:140V最大电流允许值:1A最大耗散率:0.8W放大倍数:β>40最大工作频率:>100MHZ引脚数: 3可代换的型号:BSS43,BSW68,2SC1860,晶体管型号:2N3055(E,H,S,U,)生产厂家:德国AEG公司,德国椤茨标准电器公司,法国巴黎珊斯公司,德国电子元件股份公司,美国摩托罗拉半导体公司,德国凡尔伏公司,德国西门子AG公司,美国晶体管有限公司,美国无线电公司制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S),功率放大(L)封装形式:直插封装极限工作电压:100V最大电流允许值:15A最大耗散率:115W放大倍数:未知放大倍数最大工作频率:>2.5MHZ引脚数: 3可代换的型号:BD130,BD317,BD745C,BDW51C,BDX10,BDY20,BDY39,BDY73,2N5629,2N5630,2N5 631,2N6254,3D D17D,晶体管型号:2N3390生产厂家:美国通用电器公司,法国巴黎珊斯公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.1A最大耗散率:0.36W放大倍数:β>400最大工作频率:140MHZ引脚数: 3可代换的型号:BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221 ,2N2222,3DG121 C,晶体管型号:2N3391(A)生产厂家:美国通用电器公司,法国巴黎珊斯公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.1A最大耗散率:0.36W放大倍数:β>250最大工作频率:160MHZ引脚数: 3可代换的型号:BC168,BC183,BC238,BC548,晶体管型号:2N3392生产厂家:美国通用电器公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.1A最大耗散率:0.36W放大倍数:β>150最大工作频率:120MHZ引脚数: 3可代换的型号:BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221 ,2N2222,3DG121 A,晶体管型号:2N3393生产厂家:美国通用电器公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.1A最大耗散率:0.36W放大倍数:β>90最大工作频率:120MHZ引脚数: 3可代换的型号:BC168,BC183,BC238,BC548, 晶体管型号:2N3394生产厂家:美国通用电器公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.1A最大耗散率:0.36W放大倍数:β>55最大工作频率:120MHZ引脚数: 3可代换的型号:BC168,BC183,BC238,BC548, 晶体管型号:2N3414生产厂家:美国通用电器公司,法国巴黎珊斯公司,美国国民半导体公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限__________工作电压:25V最大电流允许值:0.5A最大耗散率:0.36W放大倍数:β>75最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC338,BC378,BC738,BC838,2N220,2N221,2N2222,2N3402,3DK3A, 晶体管型号:2N3415生产厂家:美国通用电器公司,法国巴黎珊斯公司,美国国民半导体公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.5A最大耗散率:0.36W放大倍数:β>75最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:2N3403,晶体管型号:2N3416生产厂家:美国通用电器公司,法国巴黎珊斯公司,美国国民半导体公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.5A最大耗散率:0.36W放大倍数:β>75最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC337,BC377,BC737,BC837,2N2220,2N2221,2N2222,2N3404,3DK3A, 晶体管型号:2N3417生产厂家:美国通用电器公司,法国巴黎珊斯公司,美国国民半导体公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.5A最大耗散率:0.36W放大倍数:β>75最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:2N3405,晶体管型号:2N3439(L,S)生产厂家:德国AEG公司,美国无线电公司,美国得克萨斯仪表公司,德国电子元件股份公司,美国晶体管有限公司,德国凡尔伏公司制作材料:Si-NPN性质:开关管(S),视频输出(Vid)封装形式:直插封装极限工作电压:450V最大电流允许值:1A最大耗散率:1W放大倍数:未知放大倍数最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BSS49,BUX54,BUX55,BUX64,BUY59,BUY60,2N5095,3DK304B,晶体管型号:2N3441生产厂家:美国无线电公司,法国巴黎珊斯公司,德国西门子AG公司,SEM,美国硅晶体技术公司,美国晶体管有限公司制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S),功率放大(L)封装形式:直插封装极限工作电压:160V最大电流允许值:3A最大耗散率:25W放大倍数:未知放大倍数最大工作频率:>0.8MHZ引脚数: 2可代换的型号:BD193,BD241D,BD243D,BDX22,BDY72,BDY79,2SD386(A),2N3738,2N6264,3DD61E, 晶体管型号:2N3501(S)生产厂家:美国摩托罗拉半导体公司,美国国民半导体公司,美国晶体管有限公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:150V最大电流允许值:0.3A最大耗散率:1W放大倍数:β>100最大工作频率:>150MHZ引脚数: 3可代换的型号:BSS43,BSW68,2SC1860,晶体管型号:2N3700生产厂家:美国国民半导体公司,德国电子元件股份公司,德国凡尔伏公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:140V最大电流允许值:1A最大耗散率:0.5W放大倍数:β>100最大工作频率:200MHZ引脚数: 3可代换的型号:BSS43,BSS59,BSW68,2SC3228,2SC2383,2N2990,3DK204C, 晶体管型号:2N3707生产厂家:美国国民半导体公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:低频或音频放大(LF),前置放大(V),低噪放大(ra)封装形式:直插封装极限工作电压:30V最大电流允许值:0.03A最大耗散率:0.36W放大倍数:未知放大倍数最大工作频率:80MHZ引脚数: 3可代换的型号:BC109,BC169,BC173,BC184,BC209,BC239,BC384,BC549,BC584,3DG110B, 晶体管型号:2N3711生产厂家:美国国民半导体公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:低频或音频放大(LF)封装形式:直插封装极限工作电压:30V最大电流允许值:0.03A最大耗散率:0.36W放大倍数:β>180最大工作频率:80MHZ引脚数: 3可代换的型号:BC168,BC183,BC238,BC548,晶体管型号:2N3858生产厂家:美国通用电器公司,SEM,美国史普拉各电气公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:30V最大电流允许值:0.1A最大耗散率:0.36W放大倍数:β>60最大工作频率:125MHZ引脚数: 3可代换的型号:BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221 ,2N2222,3DG121 M.,晶体管型号:2N3859生产厂家:美国通用电器公司,SEM,美国史普拉各电气公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:30V最大电流允许值:0.1A最大耗散率:0.36W放大倍数:β>100最大工作频率:140MHZ引脚数: 3可代换的型号:BC168,BC183,BC238,BC548,BC108,BC172,BC208,BC383,BC583,2N2220,2N2221 ,2N2222,3DG121 M,晶体管型号:2N3860生产厂家:美国通用电器公司,SEM,美国史普拉各电气公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:30V最大电流允许值:0.1A最大耗散率:0.36W放大倍数:β>150最大工作频率:170MHZ引脚数: 3可代换的型号:BC168,BC183,BC238,BC548,BC108,BC172,BC208,BC383,BC583,2N2220,2N2221 ,2N2222,3DG121 M,晶体管型号:2N3879生产厂家:美国无线电公司,美国硅晶体技术公司,美国晶体管有限公司制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S),功率放大(L)封装形式:直插封装极限工作电压:120V最大电流允许值:7A最大耗散率:35W放大倍数:未知放大倍数最大工作频率:>40MHZ引脚数: 2可代换的型号:BD193,BDX22,MJE15030,2N5202,2N6264,3DA27B,晶体管型号:2N3903生产厂家:美国摩托罗拉半导体公司,德国电子元件股份公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:60V最大电流允许值:0.2A最大耗散率:0.625W放大倍数:β>50最大工作频率:>250MHZ引脚数: 3可代换的型号:BC174,BC182,BC190,BC546,2N2220,2N2221,2N2222,3DK40B,晶体管型号:2N3904生产厂家:美国摩托罗拉半导体公司,德国电子元件股份公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:60V最大电流允许值:0.2A最大耗散率:0.625W放大倍数:β>100最大工作频率:>250MHZ引脚数: 3可代换的型号:BC174,BC182,BC190,BC546,晶体管型号:2N3947生产厂家:美国摩托罗拉半导体公司,美国国民半导体公司,SSI制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S)封装形式:直插封装极限工作电压:60V最大电流允许值:0.2A最大耗散率:0.36W放大倍数:β>100最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC182,BC546,BFX94,BSW61,BSW84,2N2221,2N2221(A),2N2222(A),3DG130B, 晶体管型号:2N4014生产厂家:美国摩托罗拉半导体公司,德国电子元件股份公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:开关管(S)封装形式:直插封装极限工作电压:80V最大电流允许值:1A最大耗散率:0.36W放大倍数:未知放大倍数最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:2N3737,3DG84C,晶体管型号:2N4123生产厂家:美国摩托罗拉半导体公司,德国电子元件股份公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S)封装形式:直插封装极限工作电压:40V最大电流允许值:0.2A最大耗散率:0.625W放大倍数:未知放大倍数最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC107,BC171,BC183,BC207,BC237,BC382,BC547,BC582,BSW41,2N2220,2N2221 ,2N2222(A),2N22 22,2N2221(A),3DK40A,晶体管型号:2N4124生产厂家:美国摩托罗拉半导体公司,德国电子元件股份公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S)封装形式:直插封装极限工作电压:30V最大电流允许值:0.2A最大耗散率:0.625W放大倍数:未知放大倍数最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC238,BC548,BSW41,2N2221(A),2N2222(A),晶体管型号:2N4264生产厂家:CSR,美国摩托罗拉半导体公司,美国半导体技术公司制作材料:Si-NPN性质:开关管(S)封装形式:直插封装极限工作电压:30V最大电流允许值:0.2A最大耗散率:0.625W放大倍数:β>40最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX90,BSX91,B SX92,BSX93,B SY62,BSY63,2N914,2N2368(A),2N2369(A),3DK40A,晶体管型号:2N4265生产厂家:CSR,美国摩托罗拉半导体公司,美国半导体技术公司制作材料:Si-NPN性质:开关管(S)封装形式:直插封装极限工作电压:30V最大电流允许值:0.2A最大耗散率:0.625W放大倍数:β>100最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX90,BSX91,B SX92,BSX93,B SY62,BSY63,2N914,2N2368(A),2N2369(A),3DK40A,晶体管型号:2N4286生产厂家:美国国民半导体公司,PIH制作材料:Si-NPN性质:低频或音频放大(LF)封装形式:直插封装极限工作电压:30V最大电流允许值:0.05A最大耗散率:0.25W放大倍数:未知放大倍数最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:3CG120c,晶体管型号:2N4400生产厂家:美国、法国费兰第有限公司,美国摩托罗拉半导体公司,美国史普拉各电气公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:60V最大电流允许值:0.6A最大耗散率:0.625W放大倍数:β>50最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC337A,BC487,BC537,BC637,BC639,2N2220,2N2221,2N2221(A),2N2222,2N222 2(A),3DK4B,晶体管型号:2N4401生产厂家:美国、法国费兰第有限公司,美国摩托罗拉半导体公司,美国史普拉各电气公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极__________限工作电压:60V最大电流允许值:0.6A最大耗散率:0.625W放大倍数:β>100最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC337A,BC637,BC639,2N2221(A),2N2222(A),晶体管型号:2N4409生产厂家:美国摩托罗拉半导体公司,\NSC,美国得克萨斯仪表公司制作材料:Si-NPN性质:数码驱动(Nix)封装形式:直插封装极限工作电压:80V最大电流允许值:0.25A最大耗散率:0.625W放大倍数:未知放大倍数最大工作频率:>60MHZ引脚数: 3可代换的型号:BF391,BF297,BF422,BFR22,BFR86,BSS38,BSV29,BSX21,MPSA43,2N5550,2SC16 70,3DG182H, 晶体管型号:2N4410生产厂家:美国摩托罗拉半导体公司,\NSC,美国得克萨斯仪表公司制作材料:Si-NPN性质:数码驱动(Nix)封装形式:直插封装极限工作电压:120V最大电流允许值:0.25A最大耗散率:0.625W放大倍数:未知放大倍数最大工作频率:>60MHZ引脚数: 3可代换的型号:BF391,BFR22,MPS-A43,2SC1670,晶体管型号:2N4424生产厂家:美国通用电器公司,法国巴黎珊斯公司,美国史普拉各电气公司制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S)封装形式:直插封装极限工作电压:60V最大电流允许值:0.5A最大耗散率:0.36W放大倍数:未知放大倍数最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC337A,BC487,BC537,BC637,BC640,2N2220,2N2221,2SD667,3DK40A,晶体管型号:2N4921生产厂家:美国摩托罗拉半导体公司,美国国民半导体公司,德国电子元件股份公司制作材料:Si-PNP性质:低频或音频放大(LF),开关管(S),功率放大(L)封装形式:直插封装极限工作电压:40V最大电流允许值:1A最大耗散率:30W放大倍数:未知放大倍数最大工作频率:>3MHZ引脚数: 3可代换的型号:BD135,BD165,BD175,BD185,BD233,BD437,3DD30A,晶体管型号:2N4922生产厂家:美国摩托罗拉半导体公司,美国国民半导体公司,德国电子元件股份公司制作材料:Si-PNP性质:低频或音频放大(LF),开关管(S),功率放大(L)封装形式:直插封装极限工作电压:60V最大电流允许值:1A最大耗散率:30W放大倍数:未知放大倍数最大工作频率:>3MHZ引脚数: 3可代换的型号:BD137,BD167,BD177,BD187,BD235,BD439,3DD30A,晶体管型号:2N4923生产厂家:美国摩托罗拉半导体公司,美国国民半导体公司,德国电子元件股份公司制作材料:Si-PNP性质:低频或音频放大(LF),开关管(S),功率放大(L)封装形式:直插封装极限工作电压:80V最大电流允许值:1A最大耗散率:30W放大倍数:未知放大倍数最大工作频率:>3MHZ引脚数: 3可代换的型号:BD139,BD169,BD179,BD189,BD237,BD441,3DD30A,晶体管型号:2N5038(-1)生产厂家:美国无线电公司,德国电子元件股份公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:开关管(S),功率放大(L)封装形式:直插封装极限工作电压:150V最大电流允许值:20A最大耗散率:140W放大倍数:未知放大倍数最大工作频率:>60MHZ引脚数: 2可代换的型号:BUV10,BUW57,BUX10,BUX40,晶体管型号:2N5039(-1)生产厂家:美国无线电公司,德国电子元件股份公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:开关管(S),功率放大(L)封装形式:直插封装极限工作电压:120V最大电流允许值:20A最大耗散率:140W放大倍数:未知放大倍数最大工作频率:>60MHZ引脚数: 2可代换的型号:BUV10,BUW57,BUX10,BUX40,晶体管型号:2N5058(S)生产厂家:美国摩托罗拉半导体公司,美国硅晶体技术公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:开关管(S),视频输出(Vid)封装形式:直插封装极限工作电压:300V最大电流允许值:0.15A最大耗散率:1W放大倍数:未知放大倍数最大工作频率:>30MHZ引脚数: 3可代换的型号:BF259,BF338,BF659,BFR59,BFS89,BFT49,3DG841,晶体管型号:2N5059(S)生产厂家:美国摩托罗拉半导体公司,美国硅晶体技术公司,美国得克萨斯仪表公司制作材料:Si-NPN性质:开关管(S),视频输出(Vid)封装形式:直插封装极限工作电压:250V最大电流允许值:0.15A最大耗散率:1W放大倍数:未知放大倍数最大工作频率:>30MHZ引脚数: 3可代换的型号:BF258,BF259,BF337,BF658,BF659,BFS89,BFR58,BFT48,3DG841, 晶体管型号:2N5088生产厂家:美国范恰得公司,美国摩托罗拉半导体公司,美国国民半导体公司制作材料:Si-NPN性质:低频或音频放大(LF),低噪放大(ra)封装形式:直插封装极限工作电压:35V最大电流允许值:0.05A最大耗散率:0.625W放大倍数:β>300最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC109,BC169,BC173,BC184,BC209,BC239,BC384,BC549,BC584,3DG120A, 晶体管型号:2N5089生产厂家:美国范恰得公司,美国摩托罗拉半导体公司,美国国民半导体公司制作材料:Si-NPN性质:低频或音频放大(LF),低噪放大(ra)封装形式:直插封装极限工作电压:30V最大电流允许值:0.05A最大耗散率:0.625W放大倍数:β>400最大工作频率:<1MHZ或者未知工作频率引脚数: 3可代换的型号:BC169,BC184,BC239,BC549,晶体管型号:2N5172生产厂家:美国通用电器公司,SEM,美国史普拉各电气公司制作材料:Si-NPN性质:通用型(Uni)封装形式:直插封装极限工作电压:25V最大电流允许值:0.1A最大耗散率:0.36W放大倍数:未知放大倍数最大工作频率:200MHZ引脚数: 3可代换的型号:BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,BC583,2N2220,2N2221 ,2N2222,3DG120 A,晶体管型号:2N5191生产厂家:美国摩托罗拉半导体公司,美国国民半导体公司,德国电子元件股份公司制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S),功率放大(L)封装形式:直插封装极限工作电压:60V最大电流允许值:4A最大耗散率:40W放大倍数:未知放大倍数最大工作频率:>2MHZ引脚数: 3可代换的型号:BD189,BD199,BD295,BD441,BD789,MJE240,MJE241,MJE242,MJE243,MJE244,3D D64C,晶体管型号:2N5192生产厂家:美国摩托罗拉半导体公司,美国国民半导体公司,德国电子元件股份公司制作材料:Si-NPN性质:低频或音频放大(LF),开关管(S),功率放大(L)封装形式:直插封装极限工作电压:80V最大电流允许值:4A最大耗散率:40W放大倍数:未知放大倍数最大工作频率:>2MHZ引脚数: 3可代换的型号:BD189,BD199,BD295,BD441,BD789,MJE240,MJE241,MJE242,MJE243,MJE244,3D D64C,晶体管型号:2N5209生产厂家:美国、法国费兰第有限公司,美国摩托罗拉半导体公司,美国国民半导体公司制作材料:Si-NPN性质:低频或音频放大(LF),低噪放大(ra)封装形式:直插封装极限工作电压:50V最大电流允许值:0.05A最大耗散率:0.625W放大倍数:未知放大倍数最大工作频率:80MHZ引脚数: 3可代换的型号:BC184,BC384,BC413,BC414,BC550,2SC2240,3DG110C,晶体管型号:2N5210生产厂家:美国、法国费兰第有限公司,美国摩托罗拉半导体公司,美国国民半导体公司制作材料:Si-NPN性质:低频或音频放大(LF),低噪放大(ra)封装形式:直插封装极限工作电压:50V最大电流允许值:0.05A最大耗散率:0.625W放大倍数:未知放大倍数最大工作频率:80MHZ引脚数: 3可代换的型号:BC184,BC413,BC414,BC550,2SC2240,晶体管型号:2N5223。

BCX70J贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-23 Plastic-Encapsulate Transistors Value Unit ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions M in T yp M ax Unit Collector-base breakdown voltageV (BR)CBO I C =10μA,I E 0 45 V Collector-emitter breakdown voltageV (BR)CEO I C =2mA,I B 0 45 V Emitter-base breakdown voltageV (BR)EBO I E =1μA,I C 0 5 V Collector cut-off currentI CES V CE =45V,V BE 0 20 nA h FE1 V CE =5V,I C =10μA 30 h FE2V CE =5V,I C 2mA 250 460 DC current gain BCX70J h FE3V CE =1V,I C 50mA 90 h FE1V CE =5V,I C =10μA 100 h FE2V CE =5V,I C 2mA 380 630 DC current gain BCX70K h FE3V CE =1V,I C 50mA 100 V CE(sat)1I C = 10mA I B = 0.25 mA 0.05 0.35 V Collector-emitter saturation voltage V CE(sat)2I C = 50mA I B =1.25 mA 0.1 0.55 V V BE(sat)1I C = 10mA I B =-0.25 mA 0.6 0.85 V Base -emitter saturation voltage V BE(sat)2I C = 50mA I B = 1.25 mA 0.7 1.05 V Base-emitter voltage V BEV CE =5V,I C =2mA 0.55 0.75 V Collector output capacitance C obV CB =10V,I E =0,f =1MHz 1.7 pF Noise Figure NFV CE =5V,I C =200μA, f=1KHz,BW=200Hz,RS=2K Ω 6 dB Gain-Bandwidth Product f T V CE = 5 V, I C =10mA,f =100 MHz 100 250 MHzSOT-23 1. BASE2. EMITTER3. COLLECTOR A,May,2011【南京南山半导体有限公司 — 长电贴片三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

1C10C0G101J050B(vishay)中文数据手册「EasyDatasheet」

J K M
TOLERANCE
± 5% ± 10% ± 20%
AVAILABLE IN EIA CHARACTERISTIC
C0G X7R Z5U
B = Bulk
R = Tape and Reel
* 1.0 [25.4] minimum lead length.
文件编号：42012 修订25九月00
31
050 DC VOLTAGE RATING
Thisisexpressed in volts. To complete the three-digit block, zeros precede the voltage rating.
B LEAD LENGTH*
See Dimensional Configurations.
文件编号：42012 修订25九月00
芯片中文手册,看全文,戳
标准零件编号
1C20C0G222J050R 1C20C0G222J100B 1C20C0G222J100R 1C20C0G330J050B 1C20C0G330J050R 1C20C0G330J100B 1C20C0G330J100R 1C20C0G331J050B 1C20C0G331J050R 1C20C0G331J100B 1C20C0G331J100R 1C20C0G332J050B 1C20C0G332J050R 1C20C0G332J100B 1C20C0G332J100R
1C20X7R333K100B 1C20X7R333K100R 1C20X7R472K050B 1C20X7R472K050R 1C20X7R472K100B 1C20X7R472K100R 1C20X7R473K050B 1C20X7R473K050R 1C20X7R473K100B 1C20X7R473K100R 1C20Z5U103M050B 1C20Z5U103M050R 1C20Z5U103M100B 1C20Z5U103M100R 1C20Z5U104M050B 1C20Z5U104M050R 1C20Z5U104M100B 1C20Z5U104M100R 1C20Z5U223M050B 1C20Z5U223M050R

Datasheet MLX90614 中文数据手册 rev008

标准上，MLX90614 是按照目标物体发射率 1 进行校准的。客户可根据其目标物体的发射率进行修改，可修改范围为 0.1 至 1.0，修改后，客户也不需要用黑体进行校准。
10-位 PWM 输出模式是连续输出所测物体温度的标准配置，测量物体的温度范围为-20…120 °C，分辨率为 0.14 °C。PWM 通过修改 EEPROM 内 2 个单元的值，实际上可以根据需求调整至任何温度范围，而这对出厂校准结果并无影响。
传感器的测量结果均出厂校准化，数据接口为数字式的 PWM 和 SMBus(System Management Bus) 输出。
作为标准，PWM 为 10 位，且配置为-20˚C 至 120 ˚C 内，分辨率为 0.14 ˚C 的连续输出。
传感器出厂默认，上电复位时为 SMBus 通信。
3901090614 Rev 008
PWM 引脚也可配置为热继电器(输入是 To)，这样可以实现简单且性价比高的恒温控制器或温度报警(冰点/沸点)应用，其中的温度临界值是用户可编程的。在 SMBus 系统里，这个功能可以作为处理器的中断信号，以此触发读取主线上从动器的值，并确定精度条件。
传感器有两种供电电压选择：5V 或 3V(电池供电)。其中，5V 也可简便的从更高供电电压(例如 8 至 16V)上通过外接元件调制。(具体请参考“应用信息”)
MLX90614 connection to SMBus
图 1: 典型应用电路
2 概述
MLX90614 是一款用于非接触式的红外温度传感器，集成了红外探测热电堆芯片与信号处理专用集成芯片，全部封装在 TO-39。
低噪声放大器、17 位 ADC 和强大的 DSP 处理单元的全集成，使传感器实现了高精度，高分辨率的测量。

BCX53中文资料

Product speciﬁcation
BCX51; BCX52; BCX53
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
D
B
A
b3
E HE
L
1
2
PNP medium power transistors
Product speciﬁcation
BCX51; BCX52; BCX53
DEFINITIONS
Data Sheet Status
Objective speciﬁcation Preliminary speciﬁcation Product speciﬁcation
BCX51-10; BCX52-10; BCX53-10
63 −
BCX51-16; BCX52-16; BCX53-16
100 −
collector-emitter saturation voltage IC = −500 mA; IB = −50 mA
−
−
base-emitter voltage
IC = −500 mA; VCE = −2 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point note 1

FPGA可编程逻辑器件芯片XC5VFX70T-1FF1136I中文规格书

*Notes: 1) The recommended replacement part is not a drop in replacement. A board redesign may be necessary.
Table 2: Virtex-II Pro X Products Affected
XCN08011 (v1.2) April 27, 2010
Product Discontinuation Notice
Table 4: XC4000XL Products Affected (All Devices in this product line are affected.)
Part Number
XCN08011 (v1.2) April 27, 2010
Product Discontinuation Notice
Overview
The purpose of this notification is to communicate that Xilinx is discontinuing certain XC3000, XC4000XL, XC5206, Virtex, Spartan-3 products, and Aerospace & Defense “XQ” products.
Part Number
Replacement Part
XC2VPX20-5FF896C XC2VPX20-5FF896I XC2VPX20-5FFG896C XC2VPX20-5FFG896I
* No direct replacement * No direct replacement * No direct replacement * No direct replacement

74435561100;中文规格书,Datasheet资料

74435561100
DATUM / DATE : 2009-11-02 Gurtspezifikation / Tape specification:
G H
SPEICHERDROSSEL WE-HCI POWER-CHOKE WE-HCI
I Rollenspezifikation / tape and reel specification:
74435561100
DATUM / DATE : 2009-11-02
SPEICHERDROSSEL WE-HCI POWER-CHOKE WE-HCI
H Induktivitätskurve / Inductance curve:
Induktivität vs Strom (typ.) Inductance vs Current (typ.)
08-09-29
Geprüft / checked
Kontrolliert / approved
Datum / date
D-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400 http://www.we-online.de
12,00
10,00
8,00
L (µH)
6,00
4,00
2,00
0,00 0 5 10 15 Current (A) 20 25 30 35
Freigabe erteilt / general release:
..................................................................................

Vishay Siliconix S19-0701-Rev. A 晶体管数据手册说明书

N-Channel 80 V (D-S) MOSFETFEATURES•TrenchFET ® Gen IV power MOSFET •Very low R DS - Q g figure-of-merit (FOM)•Tuned for the lowest R DS - Q oss FOM •100 % R g and UIS tested•Material categorization: for definitions ofcompliance please see /doc?99912APPLICATIONS•Synchronous rectification •Primary side switch •DC/DC converter •Motor drive switch•Battery and load switch •IndustrialNotesa.Package limitedb.Surface mounted on 1" x 1" FR4 boardc.t = 10 sd.See solder profile (/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnectione.Rework conditions: manual soldering with a soldering iron is not recommended for leadless componentsf.Maximum under steady state conditions is 63 °C/Wg.T C = 25 °CPRODUCT SUMMARYV DS (V)80R DS(on) max. (Ω) at V GS = 10 V 0.0072R DS(on) max. (Ω) at V GS = 4.5 V 0.0095Q g typ. (nC)17.7I D (A)63ConfigurationSinglePowerPAK ® 1212-8STop View3.3 m m3 1.3mm Bottom ViewD 8D 7D 6D 51S2S3S4GORDERING INFORMATIONPackagePowerPAK 1212-8S Lead (Pb)-free and halogen-freeSiSS32LDN-T1-GE3ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)PARAME T ERSYMBOL LIMI T UNIT Drain-source voltage V DS 80VGate-source voltageV GS ± 20Continuous drain current (T J = 150 °C)T C = 25 °C I D63AT C = 70 °C 50.3T A = 25 °C 17.4 b, c T A = 70 °C13.9 b, cPulsed drain current (t = 100 μs)I DM 150Continuous source-drain diode current T C = 25 °C I S59.7T A = 25 °C 4.5 b, cSingle pulse avalanche current L = 0.1 mH I AS 20Single pulse avalanche energyE AS20mJ Maximum power dissipationT C = 25 °CP D65.7WT C = 70 °C42T A = 25 °C 5 b, c T A = 70 °C3.2 b, cOperating junction and storage temperature range T J , T stg -55 to +150°CSoldering recommendations (peak temperature) c260THERMAL RESISTANCE RATINGSPARAME T ER SYMBOL T YPICAL MAXIMUM UNI T Maximum junction-to-ambient b t ≤ 10 s R thJA 2025°C/WMaximum junction-to-case (drain)Steady state R thJC1.5 1.9Notesa.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %b.Guaranteed by design, not subject to production testingStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS (T J = 25 °C, unless otherwise noted)PARAME T ER SYMBOL T ES T CONDI T IONS MIN.T YP.MAX.UNI T StaticDrain-source breakdown voltage V DS V GS = 0 V, I D = 1 mA80--V V DS temperature coefficient ∆V DS /T J I D = 10 mA -60-mV/°C V GS(th) temperature coefficient ∆V GS(th)/T J I D = 250 μA --4.8-Gate-source threshold voltage V GS(th)V DS = V GS , I D = 250 μA 1- 2.5V Gate-source leakageI GSS V DS = 0 V, V GS = ± 20 V --100nA Zero gate voltage drain current I DSS V DS = 80 V, V GS = 0 V --1μA V DS = 80 V, V GS = 0 V, T J = 70 °C--15On-state drain current aI D(on)V DS ≥ 10 V, V GS = 10 V 40--A Drain-source on-state resistance a R DS(on)V GS = 10 V, I D = 15 A -0.00580.0072ΩV GS = 4.5 V, I D = 10 A -0.00730.0095Forward transconductance a g fs V DS = 15 V, I D = 15 A-55-SDynamic bInput capacitance C iss V DS = 40 V, V GS = 0 V, f = 1 MHz-2550-pF Output capacitanceC oss -250-Reverse transfer capacitance C rss -15.5-Total gate charge Q gV DS = 40 V, V GS = 10 V, I D = 10 A -37.557nC V DS = 40 V, V GS = 4.5 V, I D =10 A -17.727Gate-source charge Q gs -7.3-Gate-drain charge Q gd - 4.6-Output charge Q oss V DS = 40 V, V GS = 0 V-35-Gate resistance R g f = 1 MHz0.30.86 1.5ΩTurn-on delay time t d(on)V DD = 40 V, R L = 4 Ω, I D ≅ 10 A,V GEN = 10 V, R g = 1 Ω-1224ns Rise timet r -612Turn-off delay time t d(off)-2856Fall timet f -612Turn-on delay time t d(on)V DD = 40 V, R L = 4 Ω, I D ≅ 10 A,V GEN = 7.5 V, R g = 1 Ω-2244Rise timet r -61122Turn-off delay time t d(off)-2652Fall timet f-1020Drain-Source Body Diode Characteristics Continuous source-drain diode current I S T C = 25 °C --59.7A Pulse diode forward current I SM --150Body diode voltageV SD I S = 5 A, V GS = 0 V -0.75 1.1V Body diode reverse recovery time t rr I F = 10 A, di/dt = 100 A/μs,T J = 25 °C-4080ns Body diode reverse recovery charge Q rr -4590nC Reverse recovery fall time t a -24-nsReverse recovery rise timet b-16-TYPICAL CHARACTERISTICS (25°C, unless otherwise noted)Output CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate ChargeTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction TemperatureTYPICAL CHARACTERISTICS (25°C, unless otherwise noted)Source-Drain Diode Forward VoltageOn-Resistance vs. Gate-to-Source VoltageThreshold VoltageSingle Pulse Power, Junction-to-AmbientSafe Operating Area, Junction-to-AmbientNotea.V GS > minimum V GS at which R DS(on) is specifiedTYPICAL CHARACTERISTICS (25°C, unless otherwise noted)Current Derating aPower, Junction-to-Case Power, Junction-to-AmbientNotea.The power dissipation P D is based on T J max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below thepackage limitTYPICAL CHARACTERISTICS (25°C, unless otherwise noted)Normalized Thermal Transient Impedance, Junction-to-CaseVishay Siliconix maintains worldwide manufacturing cap ability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see /ppg?77179.Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED。

BC857S;中文规格书,Datasheet资料

PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8
300
Power Dissipation vs Ambient Temperat ure
PD - POWE R DIS SIPATION (W) 500 400
SC70 -6
300 200 100 0
0
25
50 75 100 TE MPE RATURE (°C)
125
150
/
100
I B - BASE CURRENT (uA)
V CE - COLLECTOR VOLTAGE (V)
/
BC857S
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
TA = 25°C unless otherwise noted
Parameter
Value
45 50 50 5.0 200 -55 to +150
Units
V V V V mA °C
4
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
PNP Multi-Chip General Purpose Amplifier

744710215;中文规格书,Datasheet资料

5.1 5.0 4.02012-06-272012-05-022009-06-30SStSStRStSStCZWürth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyTel. +49 (0) 79 42 945 - 0A Dimensions: [mm]F Typical Impedance Characteristics:H4: Classification Wave Soldering Profile:H5: Classification Wave ProfileProfile FeaturePreheat- Temperature Min (T smin )- Temperature Typical (T stypical ) - Temperature Max (T smax ) - Time (t s ) from (T smin to T smax )Δ preheat to max Temperature Peak temperature (T p )Time of actual peak temperature (t p )Ramp-down rate - Min - Typical - MaxTime 25°C to 25°C Pb-Free Assembly 100°C 120°C 130°C 70 seconds 150°C max.250°C - 260°C max. 10 secondsmax. 5 second each wave ~ 2 K/s ~ 3.5 K/s ~ 5 K/s 4 minutesSn-Pb Assembly 100°C 120°C 130°C 70 seconds 150°C max.235°C - 260°C max. 10 secondsmax. 5 second each wave ~ 2 K/s ~ 3.5 K/s ~ 5 K/s 4 minutesrefer to EN 61760-1:2006H Soldering Specifications:I Cautions and Warnings:The following conditions apply to all goods within the product series of WE-SDof Würth Elektronik eiSos GmbH & Co. KG:General:All recommendations according to the general technical specifications of the data-sheet have to be complied with.The disposal and operation of the product within ambient conditions which probably alloy or harm the wire isolation has to be avoided.If the product is potted in customer applications, the potting material might shrink during and after hardening. Accordingly to this the product is exposed to the pressure of the potting material with the effect that the core, wire and termination is possibly damaged by this pressure and so the electrical as well as the mechanical characteristics are endanger to be affected. After the potting material is cured, the core, wire and termination of the product have to be checked if any reduced electrical or mechanical functions or destructions have occurred.The responsibility for the applicability of customer specific products and use in a particular customer design is always within the authority of the customer. All technical specifications for standard products do also apply for customer specific products.Washing varnish agent that is used during the production to clean the application might damage or change the characteristics of the wire in-sulation, the marking or the plating. The washing varnish agent could have a negative effect on the long turn function of the product.Direct mechanical impact to the product shall be prevented as the ferrite material of the core could flake or in the worst case it could break. Product specific:Follow all instructions mentioned in the datasheet, especially:•The solder profile has to be complied with according to the technical wave soldering specification, otherwise no warranty will be sustai-ned.•All products are supposed to be used before the end of the period of 12 months based on the product date-code, if not a 100% solderabi-lity can´t be warranted.•Violation of the technical product specifications such as exceeding the nominal rated current will result in the loss of warranty.1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the are-as, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibi-lity for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime can-not be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component.3. Best Care and AttentionAny product-specific notes, warnings and cautions must be strictly observed.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve spe-cific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Secti-on 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a stan-dard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability ex-pectancy before or when the product for application design-in disposal is considered.The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .J Important Notes:The following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:分销商库存信息: WURTH-ELECTRONICS 744710215。

3535 N302B7 产品规格书说明书

产品规格书 Product Specification文件编号 Document number WE-WI-RD-962 版本版次Version editionA/0产品名称 Product name 3535内封ICN302B7产品规格Product specificationWE-3535AY0203Z-001文件编制 Documentation 马明海批准发行Approved issue马小其客户服务 Custormer Service 联系电话 Contact number客户名称 Customer name 样品编号 Sample number产品验证 Product verification批准承认 Recognition approval注： 1.此规格书以中英文方式书写，若有冲突以中文版文本为准。

/This specification is written in both Chinese and English. In case of conflict, the Chinese version shall prevail.2.此规格书的最终解释权归由本公司。

/The final interpretation of this specification shall be vested in the company.目录Catalog0.0、封面/co ver ..........................................................................第1页page 10.1、目录/Catalog ......................................................................... 第2页page 21、产品概述/Product Overview ..............................................................第3页page 32、功能特点/Functional characteristics.....................................................第3页page 33、应用领域/Application area ..............................................................第3页page 34、外观描述 /Appearance description ......................................................第4页page 45、封装尺寸/Size .........................................................................第4页page 46、脚位图/Foot map .........................................................................第5页page 5第5页page 5 7、最大额定值/MaximumRating ............................................................第6页page 6 8、推荐工作范围/Recommended scope ofwork .................................................9、电气参数/Electrical parameters..........................................................第6页page 610、开关特性/Switching第7页page 7 characteristics.....................................................11、内置LED参数/Built-in LED parameters..................................................第7页page 712、功能说明/Description of functions......................................................第7页page 713、恒流曲线/Constant-current第10页page 10 curve........................................................14、应用线路图/Application Route Diagram..................................................第10页page 1015、使用注意事项/Precautions ............................................................第11页page 111、产品概述/Product Overview：N302B7-3535RGB是一款集成高质量单线级联恒流驱动IC N302B7和高质量RGB LED芯片的外控恒流3535集成灯珠。

07 BC.JX手册

9
BC.J1 下载程序跳线图 3.7. 传感器接口联接多传感器时，各个传感器（350Ω 的最多四个并联）应通过接线盒形成一路称重信号接至控制器，接线盒至控制器的电缆要求有金属屏蔽层，建议配用传感器专用信号电缆。控制器最长可联接的称重信号电缆长度见下表：
接350欧姆称重传感器数量 1 4（最多） 24号线(米) 240 60 20号线(米) 600 180 16号线(米) 1200 300
2
1.4. 技术指标 1.4.1. 主要性能高精度、高分辨率 - 型 A/D 转换，330（675）Hz 采样控制器温度系数：2 ppm/℃（百万分之二/每度）控制器非线性度：0.005%（十万分之五）最小可分辨能力：0.5µv 检定分度 3000e；最大显示分度 100000d A/D 转换速度（337Hz，675 Hz 可设置）工业级抗干扰设计，通过 EMC、RFI 等方面的测试符合 GB/T 7724-2008，JJG649-1990 标准一个 RS232 串口，带光电隔离保护一个 RS485 串口，带光电隔离保护 1.4.2. 负载能力激励电压：+10V DC，最多可驱动 4 只 350的模拟式传感器。输入信号范围：-1.5～20 mV 零点信号范围：-2.3～10 mV 1.4.3. 全球电源电压范围：18V～36VDC 直流电源，最大功耗 3 瓦。控制器需要良好的接地线控制器不可与易产生电源噪声的设备共用一个电源 1.4.4. 使用环境使用温度为：-30+60℃，湿度为 10％80％，无冷凝存贮温度为：-40+70℃，湿度为 10％90％，无冷凝 1.4.5. 外形安装控制器外壳：铝合金整体拉伸件，增强 EMC 性能控制器尺寸产品尺寸(长 x 宽 x 高)：安装孔中心距： 112 x 91 x 45 mm 131mm

E5CS-R1KJX中文资料(omron)中文数据手册「EasyDatasheet - 矽搜」

开关.有关DIP开关设置详细信息,请参阅
功能设置.
-DIN 8（0至400） 3 (0.0 to 99.9) 1 (–50 to 50) °C
开关
20 s 2s
反向操作无法设置
DIN 2（上限）
, JIS和 DIN标准类型）
600
800
400
300
0
0
0
0
5
6
7
8
°C
°C °C/°F °C/°F
1
0
00006 Nhomakorabea6
7
8
9
°F °C °C °C/°F °C/°F
1
芯片中文手册,看全文,戳
E5CS-X
E5CS-X
铂电阻温度计类型
标准温度范围（开关选择）
温度单位（可选）计量单位控制方式如果没欧有报一警个
随着一a个larm
继电器输出电压输出继电器输出电压输出
I在npUuTt
设置无. 0
°C
K（ CA）镍铬 - 镍铝
999
600 500 400 300
0
0
0
00
1
2
3
4
5
°C °C/°F °C/°F °C/°F °C/°F
1 开/关或PID E5CS-RKJX E5CS-QKJX E5CS-R1KJX E5CS-Q1KJX
J（下 IC）铁 - 康铜
999
500 400
300 200
约. 170克（主机箱只）
Note: 设定值必须在对报警值,控制输出等允许范围限制.如果一组值不满足以下条件,选择其他范围：
温度范围最低
x Tset ±X x 最大温度范围

BCW70LT1G;BCW70LT1;中文规格书,Datasheet资料

BCW70LT1GGeneral Purpose TransistorPNP SiliconFeatures•These Devices are Pb −Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGSRatingSymbol Value Unit Collector −Emitter Voltage V CEO −45Vdc Emitter −Base VoltageV EBO −5.0Vdc Collector Current − ContinuousI C−100mAdcTHERMAL CHARACTERISTICSCharacteristicSymbol Max Unit Total Device Dissipation FR-5 Board (Note 1) T A = 25°C Derate above 25°CP D2251.8mW mW/°C Thermal Resistance, Junction −to −Ambient R q JA 556°C/W Total Device Dissipation Alumina Substrate, (Note 2) @T A = 25°C Derate above 25°CP D3002.4mW mW/°C Thermal Resistance, Junction −to −AmbientR q JA 417°C/WJunction and Storage TemperatureT J , T stg−55 to +150°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR −5 = 1.0 x 0.75 x 0.062 in.2.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% aluminaDevice Package Shipping †ORDERING INFORMATIONSOT −23 (TO −236AB)CASE 318STYLE 6MARKING DIAGRAMH2= Device Code M = Date Code*G = Pb −Free PackageCOLLECTOR12EMITTERBCW70LT1GSOT −23(Pb −Free)3000 / Tape & Reel†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.(Note: Microdot may be in either location)1H2 M G G *Date Code orientation and/or overbar may vary depending upon manufacturing location.ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)Characteristic Symbol Min Max Unit OFF CHARACTERISTICSCollector−Emitter Breakdown Voltage(I C = −2.0 mAdc, I B = 0)V(BR)CEO−45−VdcCollector−Emitter Breakdown Voltage(I C = −100 m Adc, V EB = 0)V(BR)CES−50−VdcEmitter−Base Breakdown Voltage(I E = −10 m Adc, I C = 0)V(BR)EBO−5.0−VdcCollector Cutoff Current(V CB= −20 Vdc, I E = 0)(V CB= −20 Vdc, I E = 0, T A = 100°C)I CBO−−−100−10nAdcm AdcON CHARACTERISTICSDC Current Gain(I C= −2.0 mAdc, V CE = −5.0 Vdc)h FE215500−Collector−Emitter Saturation Voltage(I C = −10 mAdc, I B = −0.5 mAdc)V CE(sat)−−0.3VdcBase−Emitter On Voltage(I C = −2.0 mAdc, V CE = −5.0 Vdc)V BE(on)−0.6−0.75VdcSMALL−SIGNAL CHARACTERISTICSOutput Capacitance(I E= 0, V CB = −10 Vdc, f = 1.0 MHz)C obo−7.0pFNoise Figure(I C = −0.2 mAdc, V CE = −5.0 Vdc, R S = 2.0 k W, f = 1.0 kHz, BW = 200 Hz)N F−10dB(V CE = −5.0 Vdc, T A = 25°C)Figure 1. Noise Voltage f, FREQUENCY (Hz)5.07.0103.0Figure 2. Noise Currentf, FREQUENCY (Hz)1.0102050100200500 1.0 k 2.0 k5.0 k10 k1.07.05.03.02.01.00.70.50.30.1e n , N O I S E V O L T A G E (n V )I n , N O I S E C U R R E N T (p A )102050100200500 1.0 k 2.0 k 5.0 k10 k2.00.2NOISE FIGURE CONTOURS(V CE = −5.0 Vdc, T A = 25°C)500 k2005001.0 k 10 k 5.0 k 20 k 50 k 200 k 2.0 k 1.0 M 500 k 1002005001.0 k 10 k 5.0 k 20 k 50 k 100 k 200 k 2.0 k 1.0 M Figure 3. Narrow Band, 100 Hz I C , COLLECTOR CURRENT (m A)Figure 4. Narrow Band, 1.0 kHzI C , COLLECTOR CURRENT (m A)R S , S O U R C E R E S I S T A N C E (O H M S )R S , S O U R C E R E S I S T A N C E (O H M S )Figure 5. WidebandI C , COLLECTOR CURRENT (m A)10R S , S O U R C E R E S I S T A N C E (O H M S )Noise Figure is Defined as:NF +20log 10ƪe n 2)4KTR S )I n 2R S 24KTR Sƫ1ń2= Noise Voltage of the Transistor referred to the input. (Figure 3)= Noise Current of the Transistor referred to the input.(Figure 4)= Boltzman’s Constant (1.38 x 10−23 j/°K)= Temperature of the Source Resistance (°K)= Source Resistance (Ohms)e n I n K T R S500 k 2001.0 k 10 k 5.0 k 20 k 50 k 200 k 2.0 k 1.0 MFigure 6. Collector Saturation Region I C , COLLECTOR CURRENT (mA)1.4Figure 7. Collector CharacteristicsI C , COLLECTOR CURRENT (mA)V , V O L T A G E (V O L T S )1.6Figure 8. “On” Voltages I B , BASE CURRENT (mA)0.40.60.81.00.2V C E , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )Figure 9. Temperature CoefficientsV CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)40608010020I C , C O L L E C T O R C U R R E N T (m A )1.21.00.80.60.40.20 2.40.81.60.8V , T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°θFigure 10. Turn −On Time I C , COLLECTOR CURRENT (mA)500Figure 11. Turn −Off TimeI C , COLLECTOR CURRENT (mA)1000t , T I M E (n s )t , T I M E (n s )5.07.010203050701003001020305070100200300500700200-5.0-7.0-50-70C , C A P A C I T A N C E (p F )Figure 12. Current −Gain — Bandwidth Product I C , COLLECTOR CURRENT (mA)Figure 13. CapacitanceV R , REVERSE VOLTAGE (VOLTS)5000.510f , C U R R E N T -G A I N — B A N D W I D T H P R O D U C T (M H z )T 50701002003000.7 1.02.03.0 5.07.0102030501.02.05.07.00.10.20.5 1.0 2.0 5.01020500.05Figure 14. Thermal Responset, TIME (ms)1.00.01r (t ) T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )0.010.020.030.050.070.10.20.30.50.70.020.050.10.20.51.02.05.0102050100200500 1.0 k 2.0 k5.0 k 10 k 20 k50 k 100T J , JUNCTION TEMPERATURE (°C)104-40I C , C O L L E C T O R C U R R E N T (n A )Figure 15. Typical Collector Leakage CurrentDESIGN NOTE: USE OF THERMAL RESPONSE DATAA train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles.To find Z qJA(t), multiply the value obtained from Figure 14 by the steady state value R q JA .Example:Dissipating 2.0 watts peak under the following conditions:t 1 = 1.0 ms, t 2 = 5.0 ms (D = 0.2)Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22.The peak rise in junction temperature is thereforeD T = r(t) x P (pk) x R q JA = 0.22 x 2.0 x 200 = 88°C.For more information, see AN −569.10-210-1100101102103-20+20+40+60+80+100+120+140+160PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE ANNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE,NEW STANDARD 318−08.SOLDERING FOOTPRINT*VIEW CDIM A MIN NOM MAX MIN MILLIMETERS0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTOR2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.029*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIBCW70LT1G BCW70LT1。

BCX70中文资料

open emitter open base open collector
Tamb ≤ 25 °C
MIN.
− − − − − − − −65 − −65
MAX. 45 45 5 100 200 200 250 +150 150 +150
UNIT
V V V mA mA mA mW °C °C °C
THERMAL CHARACTERISTICS
NPN general purpose transistors
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
Product speciﬁcation
BCX70 series
SOT23
D
B
E
A
X
3
1
e1
bp
e
2
wM B
HE
vM A
A A1
− − − −
220 310 460 630
− − − − 350 550 850 1 050 − 750 − − − −
6
UNIT nA µA nA
mV mV mV mV mV mV mV pF pF MHz dB
1999 Apr 15
3
元器件交易网
Philips Semiconductors
0.45 0.55 0.15 0.45
0.2
0.1
OUTLINE
VERSION
IEC
SOT23
1999 Apr 15
REFERENCES
JEDEC
EIAJ
4
EUROPEAN PROJECTION
ISSUE DATE 97-02-28

新CW13J-017中文版产品规格书_P2_

● 电芯的智能平衡处理，平衡电流可通过外部器件灵活调整
● 充放电过程中有相应的温度保护 ● 硬件的过流、短路保护功能处理 ● 所有的保护延时均可编程设置 ● 标准的 I2C 接口 ● 精确报告电池当前电量信息 ● 精确的实时时钟功能 ● 在充电开始、停止充电、放电完全结束时，
记录电池实际容量（FCC）、剩余电量（RM）、电压、电流以及时间点，而且即使保护板已损坏也可以读取这些数据。
力通威电子有限公司
LI TONG WEI ELECTRONIC TECHNOLOGY CO.,LTD
TEL： 0755-81489983 FAX： 0755-81489955 Add：深圳市宝安区龙华镇大浪同胜村上横朗
百富利工业园 C 栋 http:
样品规格书
客户名称绿威长宜送样日期 2012.04.28 版次 V1.0 页数 15
LT-GP705 SPEC
文件编号： LTW-QR-YF1979
LT-GP705（7S）SPEC
1. 介绍 Introduction
LT-GP705 是力通威公司专门针对锂电动自行车 5~7 串电池包而设计的保护板方案；可适用不同化学性质的锂电芯，如锂离子、锂聚合物、磷酸铁锂等。
保护板预留了两个 I2C 通讯接口，保护部份通讯端口可用来设置各种保护电压、电流等参数，灵活性很强。保护板带载能力强，持续放电电流最大可达 16A。
400
uA
120
150
uA
以上参数为推荐值，用户可以依据实际应用进行修改
REV 1.0 4/20/2012

Characteristics subject to change without notice. 2 of 14

Schurter PG07 70°C 可重连接 C19 插座产品说明书

14790IEC Connector C19, Rewireable, AngledRewireable connector Example with assembled cableApprovals and CompliancesC1970° CDescription- Rewireable connector for cable 90° entry : Screwing cable terminal- Connector , Pin temperature 70 °C , Protection class I - Screw clampsCharacteristics - Suitable for use in equipment according to IEC/UL 60950References Substitute for type 1651Weblinkspdf datasheet , html-datasheet , General Product Information , Distributor-Stock-Check , Accessories , Detailed request for productT echnical DataRatings IEC16 A / 250 VAC; 50 Hz Ratings UL/CSA 20 A / 250 VAC; 60 Hz Dielectric Strength> 2 kVAC between L-N > 2 kVAC between L/N-PE (1 min/50 Hz)Allowable Operation Tempe-rature-25 °C to 70 °CInsulation cover Suitable for appliances with protection class I acc. to IEC 61140TerminalScrewMaterial: HousingThermoplastic, black, UL 94V-0appliance inlet/-outletC19 acc. to IEC 60320-1UL 60320-1, CSA C22.2 no. 60320-1 (for cold conditions) pin-temperature 70 °C, 16 A, Protection Class IApprovals and CompliancesDetailed information on product approvals, code requirements, usage instructions and detailed test conditions can be looked up in Details about ApprovalsApprovalsThe approval mark is used by the testing authorities to certify compliance with the safety requirements placed on electronic products. Approval Reference T ype: 4790Approval LogoCertificates Certification Body DescriptionVDE Approvals VDECertificate Number: 40040046UL Approvals ULUL File Number: E96454CQC ApprovalsCQCCCC File Number: 2014010204709145Product standardsProduct standards that are referencedOrganizationDesignStandardDescriptionDesigned according to IEC 60320-1Appliance couplers for household and similar general purposes Designed according to UL 60320-1Standard for Attachment Plugs and ReceptaclesDesigned according toCSA C22.2 no. 60320-1General Use Receptacles, Attachment Plugs, and Similar Wiring Devices4790Application standardsApplication standards where the product can be usedOrganization Design StandardDescriptionDesigned for applications acc.IEC/UL 60950IEC 60950-1 includes the basic requirements for the safety of informationtechnologyequipment.CompliancesThe product complies with following Guide LinesIdentification Details Initiator DescriptionCE declaration of conformity SCHURTER AG The CE marking declares that the product complies with the applicablerequirements laid down in the harmonisation of Community legislation onits affixing in accordance with EU Regulation 765/2008.RoHS SCHURTER AG EU Directive RoHS 2011/65/EUChina RoHS SCHURTER AG The law SJ / T 11363-2006 (China RoHS) has been in force since 1 March2007. It is similar to the EU directive RoHS.REACH SCHURTER AG On 1 June 2007, Regulation (EC) No 1907/2006 on the Registration,Evaluation, Authorization and Restriction of Chemicals 1 (abbreviated as"REACH") entered into force.Dimensions [mm]1) Cut strain relief 8 (10) mm here for 10 mm cableA: Strain relief 8 mm: 76.1 mmB: Strain relief 10 mm: 71.1 mmAll VariantsPackaging unit 50 Pcs24790 Mating Inlets/PlugsCategory / DescriptionAppliance Inlet Overview completeIEC Appliance Inlet C20, Screw-on Mounting, Rear Side, PCB Terminal1601IEC Appliance Inlet C20, Screw-on Mounting, Front Side, Solder or Quick-connect Terminal4798IEC Appliance Inlet C20, Snap-in Mounting, Front Side, Solder or Quick-connect Terminal4793IEC Appliance Inlet C20, Screw-on Mounting, Front Side, Solder, Quick-connect or Screw Terminal1621Appliance Inlet further types to 4790Appliance inlets/-outlets Overview completePlug Coupler IEC C20 / IEC J, Screw-on Mounting4730Appliance inlets/-outlets further types to 4790IEC Inlet Filter Overview completeIEC Appliance Inlet C20 with Filter, ECO design, front or rear side Mounting5130C20F, 20 A, prewired, Standard and Medical Version, Solder, quick connect or wires (stranded), Capacitor: X2, Screw,Mounting Front-/Rear-Side, Power Entry Modules with FilterC20FC20F, 20 A, prewired, Standard and Medical Version, Solder, quick connect or wires (stranded), Capacitor: X2, Screw,Mounting Front-/Rear-Side, Power Entry Modules with FilterC22FIEC Inlet Filter further types to 4790Plug Overview completeIEC Plug I, Cord Connector (Rewireable), Straight4796IEC Plug I, Cord Connector (Rewireable), Angled4789Plug further types to 4790Power Entry Module Overview completeIEC Appliance Inlet C20 with Line Switch, 2-pole EC11IEC Appliance Inlet C20 with Circuit Breaker TA45EF11Power Entry Module further types to 4790Power Entry Module with line filter Overview completeEC12, 20 A, prewired, Standard and Medical Version, Quick connect terminals 6.3 x 0.8 mm, Capacitor: X2, Screw,Mounting Front-Side, Power Entry Modules with FilterEC12IEC Appliance Inlet C20 with Filter, Circuit Breaker TA45 (recessed)EF12Power Entry Module with line filter further types to 4790The specifications, descriptions and illustrations indicated in this document are based on currentinformation. All content is subject to modifications and amendments. Information furnished is believed29.11.2173。