Infineon-FS200R12KT4R

ModuleLabelCode
BarcodeCode128 ContentoftheCode
ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek)
反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t-值 I²t-value
最大额定值/MaximumRatedValues
最大额定值/MaximumRatedValues
Tvj = 25°C TC = 95°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C tP = 1 ms TC = 25°C, Tvj max = 175°C VCES 1200 200 280 400 1000 +/-20 min. IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V IC = 7,60 mA, VCE = VGE, Tvj = 25°C VGE = -15 V ... +15 V Tvj = 25°C f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V VCE = 1200 V, VGE = 0 V, Tvj = 25°C VCE = 0 V, VGE = 20 V, Tvj = 25°C IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 1,1 Ω IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 1,1 Ω IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 1,1 Ω IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 1,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES td on 5,2 typ. 1,75 2,05 2,10 5,8 1,65 3,5 14,0 0,50 0,14 0,15 0,15 0,03 0,035 0,04 0,32 0,40 0,42 0,09 0,16 0,18 10,5 18,5 20,5 11,0 16,5 18,5 800 0,085 150 max. 2,15 V V V V µC Ω nF nF mA nA µs µs µs µs µs µs µs µs µs µs µs µs mJ mJ mJ mJ mJ mJ A V A A
技术信息/TechnicalInformation
IGBT-模块 IGBT-modules
FS200R12KT4R
初步数据 PreliminaryData
IGBT,逆变器/IGBT,Inverter
集电极－发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极－发射极峰值电压 Gate-emitterpeakvoltage
技术信息/TechnicalInformation
IGBT-模块 IGBT-modules
FS200R12KT4R
初步数据/PreliminaryData
VCES = 1200V IC nom = 200A / ICRM = 400A
典型应用 • 电机传动 • 伺服驱动器 电气特性 • 低VCEsat • 沟槽栅IGBT4 • Tvjop=150°C 机械特性 • 低热阻的三氧化二铝（Al2O3衬底 • 铜基板 • 标封装
IRM

Qr


Erec RthJC RthCH Tvj op
-40

0,26 K/W K/W °C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
IC nom I A W V
特征值/CharacteristicValues
集电极－发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极-发射极截止电流 Collector-emittercut-offcurrent 栅极-发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload 上升时间(电感负载) Risetime,inductiveload 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload 下降时间(电感负载) Falltime,inductiveload 开通损耗能量(每脉冲) Turn-onenergylossperpulse 关断损耗能量(每脉冲） Turn-offenergylossperpulse 短路数据 SCdata 结－外壳热阻 Thermalresistance,junctiontocase 外壳－散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions preparedby:CM approvedby:RS
Eon


Eoff ISC RthJC RthCH Tvj op
-40

0,15 K/W K/W °C
技术信息/TechnicalInformation
IGBT-模块 IGBT-modules
FS200R12KT4R
初步数据 PreliminaryData
二极管,逆变器/Diode,Inverter
Tvj = 25°C tP = 1 ms VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM IF IFRM I²t min. IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 1200 200 400 5200 5000 typ. 1,70 1,65 1,65 240 250 260 18,5 33,5 38,5 8,10 14,5 16,0 0,15 150 max. 2,20 V V V A A A µC µC µC mJ mJ mJ V A A A²s A²s
6,4 1,0 400
tr


td off


tf


IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 5400 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,1 Ω Tvj = 150°C IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 5000 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,1 Ω Tvj = 150°C VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt 每个IGBT/perIGBT 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) dateofpublication:2013-11-05 revision:2.0 2 tP ≤ 10 µs, Tvj = 150°C
IF = 200 A, - diF/dt = 5400 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C IF = 200 A, - diF/dt = 5400 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C IF = 200 A, - diF/dt = 5400 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C 每个二极管/perdiode 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K)
TypicalApplications • MotorDrives • ServoDrives ElectricalFeatures • LowVCEsat • TrenchIGBT4 • Tvjop=150°C MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • CopperBasePlate • StandardHousing