WP132XNT;中文规格书,Datasheet资料

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BY359-1500,127;中文规格书,Datasheet资料

Philips Semiconductors Product specificationDamper diode BY359-1500, BY359-1500Sfast, high-voltageFEATURESSYMBOL QUICK REFERENCE DATA• Low forward volt drop • Fast switching• Soft recovery characteristic• High thermal cycling performance • Low thermal resistanceGENERAL DESCRIPTIONPINNINGSOD59 (TO220AC)Glass-passivated double diffused PIN DESCRIPTION rectifier diode featuring low forward voltage drop,fast reverse recovery 1cathode and soft recovery characteristic.The device is intended for use in TV 2anode receivers and PC monitors.tabcathodeThe BY359series is supplied in the conventional leaded SOD59(TO220AC)package.LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT V RSM Peak non-repetitive reverse -1500V voltageV RRM Peak repetitive reverse voltage -1500V V RWM Crest working reverse voltage -1300V I F(peak)Peak forward current16-32kHz TVBY359-1500 -10A 31-70kHz monitor BY359-1500S-7A I F(RMS)RMS forward current-15.7A I FRM Peak repetitive forward current sinusoidal; a = 1.57-60A I FSMPeak non-repetitive forward t = 10 ms -60A currentt = 8.3 ms-66A sinusoidal; T j = 150 ˚C prior to surge;with reapplied V RWM(max)T stg Storage temperature-40150˚C T jOperating junction temperature-150˚CTHERMAL RESISTANCESSYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT R th j-mb Thermal resistance junction to -- 2.0K/W mounting baseR th j-aThermal resistance junction to in free air.-60-K/Wambient1tab2Philips Semiconductors Product specificationDamper diode BY359-1500, BY359-1500Sfast, high-voltageSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise statedBY359-1500BY359-1500S SYMBOL PARAMETER CONDITIONS TYP.MAX.TYP.MAX.UNIT V F Forward voltage I F = 20 A1.3 1.8 1.52.0V I F = 10 A; T j = 150˚C 1.00 1.5 1.25 1.75V I RReverse currentV R = 1300 V 1010010100µA V R = 1300 V;50300100600µAT j = 100 ˚CDYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise statedBY359-1500BY359-1500S SYMBOL PARAMETERCONDITIONS TYP.MAX.TYP.MAX.UNIT t rr Reverse recovery time I F = 2 A; V R ≥ 30 V;0.470.600.280.35µs Q s Reverse recovery charge -dI F /dt = 20 A/µs 1.6 2.00.700.95µC V frPeak forward recovery voltageI F = 10 A;11.0-17.0-VdI F /dt = 30 A/µsPhilips Semiconductors Product specificationDamper diode BY359-1500, BY359-1500Sfast, high-voltagePhilips Semiconductors Product specificationDamper diode BY359-1500, BY359-1500Sfast, high-voltageMECHANICAL DATANotes1. Refer to mounting instructions for TO220 envelopes.2. Epoxy meets UL94 V0 at 1/8".Philips Semiconductors Product specification Damper diode BY359-1500, BY359-1500S fast, high-voltageDEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1998All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.分销商库存信息: NXPBY359-1500,127。

W948D6FBHX5E;W948D2FBJX5E;中文规格书,Datasheet资料

256Mb Mobile LPDDR TABLE OF CONTENTS1. GENERAL DESCRIPTION (4)2. FEATURES (4)3. PIN CONFIGURATION (5)3.1 Ball Assignment: LPDDR x16 (5)3.2 Ball Assignment: LPDDR x32 (5)4. PIN DESCRIPTION (6)4.1 Signal Descriptions (6)4.2 Addressing Table (7)5. BLOCK DIAGRAM (8)5.1 Block Diagram (8)5.2 Simplified State Diagram (9)6. FUNCTION DESCRIPTION (10)6.1 Initialization (10)6.1.1 Initialization Flow Diagram (11)6.1.2 Initialization Waveform Sequence (12)6.2 Register Definition (12)6.2.1 Mode Register Set Operation (12)6.2.2 Mode Register Definition (13)6.2.3. Burst Length (13)6.3 Burst Definition (14)6.4 Burst Type (15)6.5 Read Latency (15)6.6 Extended Mode Register Description (15)6.6.1 Extended Mode Register Definition (16)6.7 Status Register Read (16)6.7.1 SRR Register (A[n:0] = 0) (17)6.7.2 Status Register Read Timing Diagram (18)6.8 Partial Array Self Refresh (19)6.9 Automatic Temperature Compensated Self Refresh (19)6.10 Output Drive Strength (19)6.11 Commands (19)6.11.1 Basic Timing Parameters for Commands (19)6.11.2 Truth Table - Commands (20)6.11.3 Truth Table - DM Operations (21)6.11.4 Truth Table - CKE (21)6.11.5 Truth Table - Current State BANKn - Command to BANKn (22)6.11.6 Truth Table - Current State BANKn, Command to BANKn (23)7. OPERATION (24)7.1. Deselect (24)7.2. No Operation (24)7.2.1 NOP Command (25)7.3 Mode Register Set (25)256Mb Mobile LPDDR7.3.1 Mode Register Set Command (25)7.3.2 Mode Register Set Command Timing (26)7.4. Active (26)7.4.1 Active Command (26)7.4.2 Bank Activation Command Cycle (27)7.5. Read (27)7.5.1 Read Command (28)7.5.2 Basic Read Timing Parameters (28)7.5.3 Read Burst Showing CAS Latency (29)7.5.4 Read to Read (29)7.5.5 Consecutive Read Bursts (30)7.5.6 Non-Consecutive Read Bursts (30)7.5.7 Random Read Bursts (31)7.5.8 Read Burst Terminate (31)7.5.9 Read to Write (32)7.5.10 Read to Pre-charge (32)7.6 Write (33)7.6.1 Write Command (34)7.6.2 Basic Write Timing Parameters (34)7.6.3 Write Burst (min. and max. tDQSS) (35)7.6.4 Write to Write (35)7.6.5 Concatenated Write Bursts (36)7.6.6 Non-Consecutive Write Bursts (36)7.6.7 Random Write Cycles (37)7.6.8 Write to Read (37)7.6.9 Non-Interrupting Write to Read (37)7.6.10 Interrupting Write to Read (38)7.6.11 Write to Precharge (38)7.6.12 Non-Interrupting Write to Precharge (38)7.6.13 Interrupting Write to Precharge (39)7.7 Precharge (39)7.7.1 Precharge Command (40)7.8 Auto Precharge (40)7.9 Refresh Requirements (40)7.10 Auto Refresh (40)7.10.1 Auto Refresh Command (41)7.11 Self Referesh (41)7.11.1 Self Refresh Command (42)7.11.2 Auto Refresh Cycles Back-to-Back (42)7.11.3 Self Refresh Entry and Exit (43)7.12 Power Down (43)7.13 Deep Power Down (44)7.13.1 Deep Power-Down Entry and Exit (44)7.14 Clock Stop (45)7.14.1 Clock Stop Mode Entry and Exit (45)8. ELECTRICAL CHARACTERISTIC (46)8.1 Absolute Maximum Ratings (46)8.2 Input/Output Capacitance (46)8.3 Electrical Characteristics and AC/DC Operating Conditions (47)8.3.1 Electrical Characteristics and AC/DC Operating Conditions (47)8.4 IDD Specification Parameters and Test Conditions (48)8.4.1 IDD Specification Parameters and Test Conditions (48)8.5 AC Timings (51)8.5.1 CAS Latency Definition (With CL=3) (54)8.5.2 Output Slew Rate Characteristics (55)8.5.3 AC Overshoot/Undershoot Specification (55)8.5.4 AC Overshoot and Undershoot Definition (55)9. PACKAGE DIMENSIONS (56)9.1: LPDDR X 16 (56)9.2: LPDDR X 32 (57)10. ORDERING INFORMATION (58)11. REVISION HISTORY (59)1. GENERAL DESCRIPTIONW948D6FB / W948D2FB is a high-speed mobile double data rate synchronous dynamic random access memory (LPDDR SDRAM), Using pipelined architecture , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16 when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the LPDDR SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the pre-charging time. By setting programmable Mode Registers, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. The device supports special power saving functions such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR).2. FEATURESVDD = 1.7~1.95VVDDQ = 1.7~1.95VData width: x16 / x32Clock rate: 200MHz(-5),166MHz (-6), 133MHz (-75)Partial Array Self-Refresh(PASR)Auto Temperature Compensated Self-Refresh(ATCSR) Power Down ModeDeep Power Down Mode (DPD Mode)Programmable output buffer driver strengthFour internal banks for concurrent operationData mask (DM) for write dataClock Stop capability during idle periodsAuto Pre-charge option for each burst accessDouble data rate for data outputDifferential clock inputs (CK and CK)Bidirectional, data strobe (DQS)CAS Latency: 2 and 3Burst Length: 2, 4, 8 and 16Burst Type: Sequential or Interleave 64 ms Refresh periodInterface: LVCMOSSupport package:Operating Temperature Range3. PIN CONFIGURATION3.1 Ball Assignment: LPDDR x16(Top View) Pin Configuration 3.2 Ball Assignment: LPDDR x32(Top View) Pin Configuration4. PIN DESCRIPTION 4.1 Signal Descriptions4.2 Addressing Table5. BLOCK DIAGRAM 5.1 Block Diagram5.2 Simplified State Diagram6. FUNCTION DESCRIPTION6.1 InitializationLPDDR SDRAM must be powered up and initialized in a predefined manner. Operations procedures other than those specified may result in undefined operation. If there is any interruption to the device power, the initialization routine should be followed. The steps to be followed for device initialization are listed below.The Mode Register and Extended Mode Register do not have default values. If they are not programmed during the initialization sequence, it may lead to unspecified operation. The clock stop feature is not available until the device has been properly initialized from Step 1 through 11.●Step 1: Provide power, the device core power (VDD) and the device I/O power (VDDQ) must be brought upsimultaneously to prevent device latch-up. Although not required, it is recommended that VDD and VDDQ are from the same power source. Also Assert and hold Clock Enable (CKE) to a LVCMOS logic high level ●Step 2: Once the system has established consistent device power and CKE is driven high, it is safe to applystable clock.●Step 3: There must be at least 200μs of valid clocks before any command may be given to the DRAM. During thistime NOP or DESELECT commands must be issued on the command bus.●Step 4: Issue a PRECHARGE ALL command.●Step 5: Provide NOPs or DESELECT commands for at least tRP time.●Step 6: Issue an AUTO REFRESH command followed by NOPs or DESELECT command for at least tRFC time.Issue the second AUTO REFRESH command followed by NOPs or DESELECT command for at least tRFC time. Note as part of the initialization sequence there must be two Auto Refresh commands issued.The typical flow is to issue them at Step 6, but they may also be issued between steps 10 and 11.●Step 7: Using the MRS command, program the base mode register. Set the desired operation modes.●Step 8: Provide NOPs or DESELECT commands for at least tMRD time.●Step 9: Using the MRS command, program the extended mode register for the desired operating modes. Note theorder of the base and extended mode register programmed is not important.●Step 10: Provide NOP or DESELECT commands for at least tMRD time.●Step 11: The DRAM has been properly initialized and is ready for any valid command.分销商库存信息:WINBONDW948D6FBHX5E W948D2FBJX5E。

VLA503-01;中文规格书,Datasheet资料

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Hybrid ICIGBT Gate DriverVLA503-01Rev. 04/07Description:The VLA503-01 is a hybrid integrated circuit designed to provide optimum gate drive for IGBT modules. This device provides high current optically isolated gate drive with a large output voltage swing. The driver also provides short circuitprotection based on desaturation detection.Features:£ Electrical Isolation Voltage Between Input and Output with Opto-coupler(2500 V rms for 1 Minute)£ Two Supply Driver Topology £ Built-in Short-Circuit Protection (With a Pin for Fault Output)£ TTL Compatible Input Interface Application:To drive IGBT modules for inverter or AC servo systems applications Recommended IGBT Modules:600V module up to 600A 1200V module up to 400ADimensions Inches Millimeters A 2.0 51.0 B 1.02 26.0 C 0.4 10.0 D 0.45 11.5 E 0.12 3.0 F 0.3 7.5 G 0.25 6.5 H 0.10 2.54 J 0.02+0.006/-0.004 0.5+0.15/-0.1 K 0.18±0.06 4.5±1.5 L 0.01+0.01/-0.004 0.25+0.2/-0.1Note: All dimensions listed are maximums except H, J, K, and L./Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272VLA503-01Hybrid IC IGBT Gate DriverAbsolute Maximum Ratings, T a = 25°C unless otherwise specifiedCharacteristics Symbol VLA503-01 Units Supply Voltage, DC V CC 18 VoltsV EE-15 Volts Input Signal Voltage (Applied between Pin 13 - 14, 50% Duty Cycle, Pulse Width 1ms) V i -1 ~ +7 Volts Output Voltage (When the Output Voltage is "H") V O V CC Volts Output Current I OHP-5 Amperes (Pulse Width 2µs, f ≤ 20kHz) I OLP 5 Amperes Isolation Voltage (Sine Wave Voltage 60Hz, for 1 Minute) V ISO2500 V rms Case Temperature T C85 °C Operating Temperature (No Condensation Allowable) T opr-20 ~ +60 °C Storage Temperature (No Condensation Allowable) T stg-25 ~ +100* °C Fault Output Current (Applied Pin 8) I FO 20 mA Input Voltage at Pin 1 (Applied Pin 1) V R1 50 Volts *Differs from H/C condition.Electrical and Mechanical Characteristics, T a = 25°C unless otherwise specified, V CC = 15V, V EE = -10V) Characteristics Symbol Test Conditions Min. Typ. Max. Units Supply Voltage V CC Recommended Range 14 15 — VoltsV EE Recommended Range -7 — -10 Volts Pull-up Voltage on Primary Side V IN Recommended Range 4.75 5 5.25 Volts "H" Input Current I IH Recommended Range 15.2 16 19 mA Switching Frequency f Recommended Range — — 20 kHz Gate Resistance R G Recommended Range 2 — — W "H" Input Current I IH V IN = 5V — 16 — mA "H" Output Voltage V OH13 14 — Volts "L" Output Voltage V OL-8 -9 — Volts "L-H" Propagation Time t PLH I IH = 16mA — 0.5 1 µs "L-H" Rise Time t r I IH = 16mA — 0.3 1 µs "H-L" Propagation Time t PHL I IH = 16mA — 1 1.3 µs "H-L" Fall Time t f I IH = 16mA — 0.3 1 µs Timer t timer Between Start and Cancel 1 — 2 ms(Under Input Sign "L")Fault Output Current I FO Applied 8 Pin, R = 4.7k W— 5 — mA Controlled Time Detect Short-Circuit 1 t trip1Pin 1: 15V and More, Pin 2: Open — 2.6 — µs Controlled Time Detect Short-Circuit 2** t trip2Pin 1: 15V and More, Pins 2-4: 10pF — 3 — µs(Connective Capacitance)SC Detect Voltage V SC Collector Voltage of Module 15 — — Volts **Length of wiring capacitor controlled time detect short-circuit is within 5cm from Pin 2 and Pin 4 coming and going.Rev. 04/07 /VLA503-01Hybrid IC IGBT Gate DriverPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Rev. 04/07FAULTFAULTApplication Circuit/VLA503-01Hybrid IC IGBT Gate DriverPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-72724Rev. 04/07020604080AMBIENT TEMPERATURE, T a , (°C)010302040SUPPL Y VOLTAGE, V CC , (VOLTS)(PIN: 4 – 6)1.01.61.41.20.80.60.20.4P R O P A G A T I O N D E L A Y T I M E “L -H ”, t P L H , (µs )P R O P A G A T I O N D E L A Y T I M E “H -L ”, t P H L , (µs )0956784320257510012550150CONNECTIVE CAPACITANCE, C trip , (p F )(PIN: 2 – 4)C O N T R O L L ED T I ME S H O R T -C I R C U I T D E T E C T , t t r i p , (µs )01PROPAGATION DELAY TIME VS. AMBIENT CHARACTERISTICS(TYPICAL)PROPAGATION DELAY TIME VS. INPUT VOLTAGE CHARACTERISTICS(TYPICAL)PROPAGATION DELAY TIME VS.AMBIENT TEMPERATURE CHARACTERISTICS(TYPICAL)SWITCHING TIME DEFINITIONSV IN(PIN 14 TO 13)V O(PIN 5 TO 6)/VLA503-01Hybrid IC IGBT Gate DriverPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Rev. 04/07General DescriptionThe VLA503-01 is a hybrid integrated circuit designed to provide gate drive for high power IGBT modules. This circuit has been optimized for use with Powerex NF-Series and A-Series IGBT modules. However, the output characteristics are compatible with most MOS gated power devices. The VLA503-01 features a compact single-in-line package design. The upright mounting minimizes required printed circuit board space to allow efficient and flexible layout. The VLA503-01 converts logic level control signals into fully isolated +15V/-8V gate drive with up to 5A of peak drive current. Control signal isolation is provided by an integrated high speed opto-coupler. Short circuit protection is provided by means of destauration detection. Short Circuit ProtectionFigure 1 shows a block diagram of a typical desatura-tion detector. In this circuit, a high voltage fast recovery diode (D1) is connected to the IGBT’s collector to moni-tor the collector to emitter voltage. When the IGBT is in the off state, V CE is high and D1 is reverse biased. With D1 off the (+) input of the comparator is pulled up to the positive gate drive power supply (V+) which is normally +15V . When the IGBT turns on, the compara-tors (+) input is pulled down by D1 to the IGBT’s V CE(sat). The (-) input of the comparator is supplied with a fixed voltage (V TRIP ). During a normal on-state condition the comparator’s (+) input will be less than V TRIP and it’s output will be low. During a normal off-state condi-tion the comparator’s (+) input will be larger than V TRIPand it’s output will be high. If the IGBT turns on into a short circuit, the high current will cause the IGBT’s col-lector-emitter voltage to rise above V TRIP even though the gate of the IGBT is being driven on. This abnormal presence of high V CE when the IGBT is supposed to be on is often called desaturation . Desaturation can be detected by a logical AND of the driver’s input signal and the comparator output. When the output of the AND goes high a short circuit is indicated. The output of the AND can be used to command the IGBT to shut down in order to protect it from the short circuit. A delay (t TRIP ) must be provided after the comparator output to allow for the normal turn on time of the IGBT. The t TRIP delay is set so that the IGBTs V CE has enough time to fall below V TRIP during normal turn on switching. If t TRIP is set too short, erroneous desaturation detection will occur. The maximum allowable t TRIP delay is limited by the IGBT’s short circuit withstanding capability. In typical applications using Powerex IGBT modules the recom-mended limit is 10µs.Operation of the VLA503-01 Desaturation Detector The Powerex VLA503-01 incorporates short circuit protection using desaturation detection as described above. A flow chart for the logical operation of the short-circuit protection is shown in Figure 2. When a desaturation is detected the hybrid gate driver performs a soft shut down of the IGBT and starts a timed (t timer ) 1.5ms lock out. The soft turn-off helps to limit the tran-sient voltage that may be generated while interrupting the large short circuit current flowing in the IGBT . During the lock out the driver pulls Pin 8 low to indicate the fault status. Normal operation of the driver will resume after the lock-out time has expired and the control input signal returns to its off state.Adjustment of Trip TimeThe VLA503-01 has a default short-circuit detection time delay (t TRIP ) of approximately 2.5µs. This will prevent erroneous detection of short-circuit conditions as long as the series gate resistance (R G ) is near the minimum recommended value for the module being used. The 2.5µs delay is appropriate for most applica-tions so adjustment will not be necessary. However, in some low frequency applications it may be desirable to use a larger series gate resistor to slow the switching of the IGBT, reduce noise, and limit turn-off transient volt-ages. When R G is increased, the switching delay time of the IGBT will also increase. If the delay becomesINPUTFigure 1. Desaturation Detector/VLA503-01Hybrid IC IGBT Gate DriverPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Rev. 04/07Figure 2. VLA503-01 Desaturation DetectorV Figure 3. Adjustment of t triplong enough so that the voltage on the detect Pin 1 is greater than V SC at the end of the t TRIP delay the driver will erroneously indicate that a short circuit has occurred. T o avoid this condition the VLA503-01 has provisions for extending the t TRIP delay by connecting a capacitor (C TRIP ) between Pin 2 and V CC (Pins 4). The effect of adding C TRIP on trip time is shown in Figure 3. If t TRIP is extended care must be exercised not to exceed the short-circuit withstanding capability of the IGBT mod-ule. Normally this will be satisfied for Powerex NF and A-Series IGBT modules as long as the total shut-down time does not exceed 10µs./分销商库存信息: POWEREXVLA503-01。

MAX188DCPP+;MAX186DCPP+;MAX186DCWP+;MAX186DCAP+;MAX186DEWP+;中文规格书,Datasheet资料

o 8-Channel Single-Ended or 4-Channel Differential Inputs
o Single +5V or ±5V Operation o Low Power: 1.5mA (operating mode)
2µA (power-down mode) o Internal Track/Hold, 133kHz Sampling Rate o Internal 4.096V Reference (MAX186) o SPI-, QSPI-, Microwire-, TMS320-Compatible
-40°C to +85°C
20 Plastic DIP
MAX186_EWP -40°C to +85°C
Hale Waihona Puke 20 SOMAX186_EAP
-40°C to +85°C
20 SSOP
MAX186_MJP
-55°C to +125°C 20 CERDIP**
Ordering Information continued on last page. † NOTE: Parts are offered in grades A, B, C and D (grades defined in Electrical Characteristics). When ordering, please specify grade. Contact factory for availability of A-grade in SSOP package. * Dice are specified at +25°C, DC parameters only. * * Contact factory for availability and processing to MIL-STD-883.

Lenovo ThinkVision X23显示器说明书

LENOVO 产品、数据、计算机软件、及服务基于专项资金开发，作为48 C.F.R. 2.101定义的商品销售给政府机构，并授予政府机构有限的受限制的使用、复制和公开权利。

受限制的有限权利声明：如果产品、数据、计算机软件、或服务按照总务管理器“GSA”合约交付，则其使用、复制、或公开须遵循在合约号GS-35F-05925中制定的限制。

目录安全事项 (iii)一般安全原则 (iii)第1章开始使用..............................................................1-1物品清单............................................................................................................................................................................................... 1-1使用注意事项....................................................................................................................................................................................... 1-2产品概述............................................................................................................................................................................................... 1-3调整类型......................................................................................................................................................................................... 1-3倾斜................................................................................................................................................................................................. 1-3显示器控制..................................................................................................................................................................................... 1-4线缆锁槽......................................................................................................................................................................................... 1-4设置显示器........................................................................................................................................................................................... 1-5连接和打开显示器电源................................................................................................................................................................. 1-5注册您的选件....................................................................................................................................................................................... 1-7第2章调整和使用显示器......................................................2-1舒适和辅助功能................................................................................................................................................................................... 2-1安排您的工作区域......................................................................................................................................................................... 2-1放置显示器..................................................................................................................................................................................... 2-1关于健康工作习惯的小技巧......................................................................................................................................................... 2-2辅助功能信息................................................................................................................................................................................. 2-2调整显示器图像 ...................................................................................................................................................................................2-3使用直接访问控件......................................................................................................................................................................... 2-3使用On-Screen Display (OSD，屏幕显示)控件........................................................................................................................ 2-4选择受支持的显示模式................................................................................................................................................................. 2-8了解电源管理 .......................................................................................................................................................................................2-9保养显示器 .........................................................................................................................................................................................2-10卸下显示器底座和支撑臂................................................................................................................................................................. 2-10第3章参考信息..............................................................3-1显示器规格........................................................................................................................................................................................... 3-1故障排除............................................................................................................................................................................................... 3-3手动图像设置................................................................................................................................................................................. 3-4手动安装显示器驱动程序............................................................................................................................................................. 3-5在Windows 7系统中安装显示器驱动程序.............................................................. 3-5在Windows 10系统中安装显示器驱动程序............................................................. 3-6获得进一步帮助.................................................................................... 3-6附录A. 服务和支持...................................................................................................................... A-1在线技术支持...................................................................................................................................................................................... A-1附录B. 声明................................................................................................................................... B-1回收信息.............................................................................................................................................................................................. B-2商标...................................................................................................................................................................................................... B-3《废弃电器电子产品回收处理管理条例》提示性说明.................................................................................................................. B-3中国环境标志产品认证提示性说明.................................................................................................................................................. B-3中国能源效率标识.............................................................................................................................................................................. B-3有害物质.............................................................................................................................................................................................. B-4安全事项一般安全原则有关安全使用计算机方面的提示，请访问：/safetyBefore installing this product, read the Safety Information.第1章开始使用本用户指南为用户提供详细的操作说明。

LM2422TENOPB;中文规格书,Datasheet资料

LM2422LM2422 220V Monolithic Triple Channel 30 MHz CRT DTV DriverLiterature Number: SNOSAL7CLM2422220V Monolithic Triple Channel 30MHz CRT DTV DriverGeneral DescriptionThe LM2422is a triple channel high voltage CRT driver circuit designed for use in DTV applications.The IC contains three high input impedance,wide band amplifiers which directly drive the RGB cathodes of a CRT.Each channel has its gain internally set to −52and can drive CRT capacitive loads as well as resistive loads present in other applications,limited only by the package’s power dissipation.The IC is packaged in an industry standard 11-lead TO-220molded plastic power package designed specifically to meet high voltage spacing requirements.See Thermal Consider-ations section.Featuresn 30MHz bandwidthn Greater than 130V P-P output swing capability n 0V to 5V input voltage rangenStable with 0pF–20pF capacitive loads and inductive peaking networksn Convenient TO-220staggered thin lead package style Applicationsn HDTV applications using the 1080i format as well as other DTV and standard TV formats.Connection Diagram Schematic Diagram20138201FIGURE 1.Top View Order Number LM2422See NS Package Number TE11B20138202FIGURE 2.Simplified Schematic Diagram(One Channel)©2005National Semiconductor Corporation If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.Supply Voltage(V CC)+250V Bias Voltage(V BB)+16V Input Voltage(V IN)−0.5V to V BB+0.5V Storage Temperature Range(T STG)−65˚C to+150˚C Lead Temperature(Soldering,<10sec.)300˚C ESD Tolerance,Human Body Model2kV Machine Model200V Junction Temperature150˚C θJC(typ) 1.8˚C/W V CC+100V to+ V BB+7V to V IN+0V to V OUT+40V to+ Case Temperature(22W max power)1Do not operate the part without a heat sink.Heat si must have a thermal resistance under2.3˚C/W.(NoElectrical Characteristics(See Figure3for Test Circuit).Unless otherwise noted:V CC=+220V,V BB=+12V,C L=10pF,T C=60˚C.DC Tests:V +2.7V DC.AC Tests:Output=110V PP(80V–190V)at1MHz.Symbol Parameter ConditionsLM2422Min Typ MaxI CC Supply Current No Input Signal,No Video Input,NoOutput Load364554I BB Bias Current182736V OUT,1DC Output Voltage No AC Input Signal,V IN=2.7V DC124129134V OUT,2DC Output Voltage No AC Input Signal,V IN=1.2V DC200205210A V DC Voltage Gain No AC Input Signal−49−52−55∆A V Gain Matching(Note4),No AC Input Signal 1.0LE Linearity Error(Notes4,5),No AC Input Signal8t r Rise Time,80V to190V(Note6),10%to90%12+OS Overshoot12t f Fall Time,80V to190V(Note6),90%to10%12−OS Overshoot(Note6)4Note1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Note2:Operating ratings indicate conditions for which the device is functional,but do not guarantee specific performance limits.For guaranteed specificat test conditions,see the Electrical Characteristics.Datasheet min/max specification limits are guaranteed by design,test,or statistical analysis.The gu specifications apply only for the test conditions listed.Some performance characteristics may change when the device is not operated under the lis conditions.Note3:All voltages are measured with respect to GND,unless otherwise specified.Note4:Calculated value from Voltage Gain test on each channel.Note5:Linearity Error is the variation in DC gain from V IN=1.15V to V IN=4.35V.Note6:Input from signal generator:t r,t f<1ns.Note7:Running the1MHz to30MHz test pattern at1080i this part will dissipate approximately22W.This is the commonly accepted test patter representative of the worst case high frequency content for normal television viewing.This is the pattern used to estimate the worst case power dissipatio LM2422in its normal application.It is recommended to use a heat sink with a thermal resistance of2.3˚C/W or better.2Figure 3shows a typical test circuit for evaluation of the LM2422.This circuit is designed to allow testing of the LM2422in a 50Ωenvironment without the use of an expensive FET probe.The two 4990Ωresistors form a 400:1divider with the 50Ωresistor and the oscilloscope.A test point is included for easy use of an oscilloscope probe.The compensation capacitor is used to compensate the network to achieve flat frequency response.20138203Note:10pF load includes parasitic capacitance.FIGURE 3.Test Circuit (One Channel)320138204FIGURE 4.V OUT vs V IN20138205FIGURE 5.LM2422Pulse Response 20138206FIGURE 6.Bandwidth 20138207FIGURE 7.Speed vs Load Capacitance20138208FIGURE 8.Speed vs Offset20138209FIGURE 9.Speed vs Case Temperature 4201382010FIGURE 10.Power Dissipation vs Frequency 201382011FIGURE 11.Safe Operating Area201382012FIGURE 12.LM2422Cathode Response5driver suitable for DTV applications.The LM2422operates with220V and12V power supplies.The part is housed in the industry standard11-lead TO-220molded plastic power package with thin leads for improved metal-to-metal spacing. The circuit diagram of the LM2422is shown in Figure2.The PNP emitter follower,Q5,provides input buffering.Q1and Q2form a fixed gain cascode amplifier with resistors R1and R2setting the gain at−52.Emitter followers Q3and Q4 isolate the high output impedance of the cascode stage from the capacitance of the CRT cathode,which decreases the sensitivity of the device to load capacitance.Q6provides biasing to the output emitter follower stage to reduce cross-over distortion at low signal levels.Figure3shows a typical test circuit for evaluation of the LM2422.This circuit is designed to allow testing of the LM2422in a50Ωenvironment without the use of an expen-sive FET probe.In this test circuit,the two4.99kΩresistors form a400:1wideband,low capacitance probe when con-nected to a50Ωcoaxial cable and a50Ωload(such as a 50Ωoscilloscope input).The input signal from the generator is ac coupled to the base of Q5.Application HintsINTRODUCTIONNational Semiconductor(NSC)is committed to provide ap-plication information that assists our customers in obtaining the best performance possible from our products.The fol-lowing information is provided in order to support this com-mitment.The reader should be aware that the optimization of performance was done using a specific printed circuit board designed at NSC.Variations in performance can be realized due to physical changes in the printed circuit board and the application.Therefore,the designer should know that com-ponent value changes may be required in order to optimize performance in a given application.The values shown in this document can be used as a starting point for evaluation purposes.When working with high bandwidth circuits,good layout practices are also critical to achieving maximum per-formance.IMPORTANT INFORMATIONThe LM2422performance is targeted for the HDTV market. The application circuits shown in this document to optimize performance and to protect against damage from CRT arc over are designed specifically for the LM2422.If another member of the LM242X family is used,please refer to its datasheet.POWER SUPPLY BYPASSSince the LM2422is a wide bandwidth amplifier,proper power supply bypassing is critical for optimum performance. Improper power supply bypassing can result in large over-shoot,ringing or oscillation.0.1µF capacitors should be connected from the supply pins,V CC and V BB,to ground,as close to the LM2422as is practical.Additionally,a22µF or larger electrolytic capacitor should be connected from both supply pins to ground reasonably close to the LM2422. ARC PROTECTIONDuring normal CRT operation,internal arcing may occasion-ally occur.This fast,high voltage,high-energy pulse can damage the LM2422output stage.The application circuit current rating,low series impedance and low shunt c tance.1SS83or equivalent diodes are recommende and D2should have short,low impedance connecti V CC and ground respectively.The cathode of D1sho located very close to a separately decoupled bypass c tor(C3in Figure13).The ground connection of D2a decoupling capacitor should be very close to the L ground.This will significantly reduce the high freq voltage transients that the LM2422would be subjec during an arc over condition.Resistor R2limits the a current that is seen by the diodes while R1limits the c into the LM2422as well as the voltage stress at the o of the device.R2should be a1⁄2W solid carbon type re R1can be a1⁄4W metal or carbon film type resistor.H large value resistors for R1and R2would be desirab this has the effect of increasing rise and fall times.In L1is critical to reduce the initial high frequency v levels that the LM2422would be subjected to.The in will not only help protect the device but it will als minimize rise and fall times as well as minimize EM proper arc protection,it is important to not omit any of protection components shown in Figure13.EFFECT OF LOAD CAPACITANCEFigure7shows the effect of increased load capacita the speed of the device.This demonstrates the impo of knowing the load capacitance in the application.In ing the load capacitance from10pF to20pF adds 4.5ns to the rise time and3.5ns to the fall time important to keep the board capacitance as low as po to maximize the speed of the driver.EFFECT OF OFFSETFigure8shows the variation in rise and fall times wh output offset of the device is varied from120V to13 Offset has little effect on the LM2422.The rise ti creases less than0.5ns as the offset is increased in v and the fall time decreases by about0.5ns with the offset adjustment.THERMAL CONSIDERATIONSFigure9shows the performance of the LM2422in t circuit shown in Figure3as a function of case tempe The figure shows that the rise time of the LM2422inc by about2ns as the case temperature increases from to110˚C.Over the same case temperature range t time increased by about2.5ns.201 FIGURE13.One Channel of the LM2422with t Recommended Application Circuit6LM2422vs.Frequency when all three channels of the device are driving into a 10pF load with a 110V P-P alternating one pixel on,one pixel off.Note that the frequency given in Figure 10is half of the pixel frequency.The graph assumes a 72%active time (device operating at the specified fre-quency),which is typical in a TV application.The other 28%of the time the device is assumed to be sitting at the black level (190V in this case).A TV picture will not have frequency content over the whole picture exceeding 20MHz.It is important to establish the worst case condition under normal viewing to give a realistic worst-case power dissipation for the LM2422.One test is a 1to 30MHz sine wave sweep over the active line.This would give a slightly lower power than taking the average of the power between 1and 30MHz.This average is 23.5W.A sine wave will dissipate slightly less power,probably about 21W or 22W of power dissipa-tion.All of this information is critical for the designer to establish the heat sink requirement for his application.The designer should note that if the load capacitance is in-creased the AC component of the total power dissipation will also increase.The LM2422case temperature must be maintained below 110˚C given the maximum power dissipation estimate of 22W.If the maximum expected ambient temperature is 60˚C and the maximum power dissipation is 22W then a maximum heat sink thermal resistance can be calculated:This example assumes a capacitive load of 10pF and no resistive load.The designer should note that if the load capacitance is increased the AC component of the total power dissipation will also increase.OPTIMIZING TRANSIENT RESPONSEReferring to Figure 13,there are three components (R1,R2and L1)that can be adjusted to optimize the transient re-sponse of the application circuit.Increasing the values of R1and R2will slow the circuit down while decreasing over-shoot.Increasing the value of L1will speed up the circuit as well as increase overshoot.It is very important to use induc-tors with very high self-resonant frequencies,preferably above 300MHz.Ferrite core inductors from ler Magnetics (part #78FR--K)were used for optimizing thepoint for the evaluation of the ing a variable resistor for R1will simplify finding the value needed for optimum performance in a given application.Once the opti-mum value is determined the variable resistor can be re-placed with a fixed value.Due to arc over considerations it is recommended that the values shown in Figure 13not be changed by a large amount.Figure 12shows the typical cathode pulse response with an output swing of 110V PP inside a modified production TV set using the LM1237pre-amp.PC BOARD LAYOUT CONSIDERATIONSFor optimum performance,an adequate ground plane,iso-lation between channels,good supply bypassing and mini-mizing unwanted feedback are necessary.Also,the length of the signal traces from the signal inputs to the LM2422and from the LM2422to the CRT cathode should be as short as possible.The following references are recommended:Ott,Henry W.,“Noise Reduction Techniques in Electronic Systems”,John Wiley &Sons,New York,1976.“Video Amplifier Design for Computer Monitors”,National Semiconductor Application Note 1013.Pease,Robert A.,“Troubleshooting Analog Circuits”,Butterworth-Heinemann,1991.Because of its high small signal bandwidth,the part may oscillate in a TV if feedback occurs around the video channel through the chassis wiring.To prevent this,leads to the video amplifier input circuit should be shielded,and input circuit wiring should be spaced as far as possible from output circuit wiring.TYPICAL APPLICATIONThe typical application for the LM2422is in HDTV systems with scan rates as high as 1080i.Full resolution of a 1080i system requires 30MHz of bandwidth matching the capabil-ity of the ed in conjunction with an AVP with a 1.2V black level output no buffer transistors are required to obtain the correct black level at the cathodes.If the AVP has a black level closer to 2V,then an NPN transistor should be used to drop the video black level voltage closer to 1.2V.Some AVPs have black levels at about 2.5V.This level would require two buffer transistors to drop the black level to the desired 1.2V.For more information on typical applications or for demonstration boards please contact your local National Semiconductor representative.7NOTE:Available only with lead free platingNS Package Number TE11B Order Number LM2422National does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National re the right at any time without notice to change said circuitry and specifications.For the most current product information visit us at .LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR S WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICON CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life s device or system whose failure to perform can be reas expected to cause the failure of the life support de system,or to affect its safety or effectiveness.BANNED SUBSTANCE COMPLIANCENational Semiconductor manufactures products and uses packing materials that meet the provisions of the Customer Pr Stewardship Specification (CSP-9-111C2)and the Banned Substances and Materials of Interest Specification (CSP-9-111S2)and c no ‘‘Banned Substances’’as defined in CSP-9-111S2.Leadfree products are RoHS compliant.National Semiconductor Americas Customer Support CenterEmail:new.feedback@ Tel:1-800-272-9959National SemiconductorEurope Customer Support CenterFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Support CenterEmail:ap.support@National Semiconduc Japan Customer Sup Fax:81-3-5639-7507Email:jpn.feedback@n Tel:81-3-5639-7560L M 2422220V M o n o l i t h i c T r i p l e C h a n n e l 30M H z C R T D T VIMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements,improveme and other changes to its products and services at any time and to discontinue any product or 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CAT2300VP2-GT3;中文规格书,Datasheet资料

CAT2300Current Mirror and Switch Controller for SENSEFET )MOSFETsDescriptionCAT2300 is a controller for SENSEFET ® MOSFET current monitoring in high-side switch applications.CAT2300 provides current mirroring and ON/OFF control for SENSEFET MOSFETs. Exact control and matching of the Sense output of the SENSEFET with the Kelvin voltage insures accurate current monitoring over many decades of current.Designed for use with NTMFS4833NST1G, NTMFS4854NST1G or similar SENSEFET MOSFETs from ON Semiconductor, CA T2300is the single chip alternative to discrete circuits for monitoring and controlling 0.9 V − 1.5 V power busses. When teamed with a SENSEFET, CAT2300 will track currents up to 25 A and resolve currents below 100 mA.CAT2300 provides logic level ON/OFF control of the power MOSFET and its own internal circuitry, reducing power consumption to virtually zero milliwatts.Packaged in a space saving low profile 2 x 3 mm TDFN, CAT2300operates over the full industrial temperature range of −40°C to +85°C.Features •Precision Current Measurement of 0.9 V − 1.5 V Power Supply Rails •ON/OFF Power FET Control with Soft −start •Sense Current Mirroring to 70 mA (equal to 25 A flowing in the power bus)•User Adjustable Current to V oltage Conversion Ratio•150 m V Typical Matching between Kelvin and Sense Leads •Less than 1 m A Current Consumption in Shutdown Mode •This Device is Pb −Free, Halogen Free/BFR Free and RoHS CompliantTypical Applications•Portable Computers •Backplane Bus Control •Power DistributionFigure 1. System ApplicationSystem LoadSee detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.ORDERING INFORMATIONPIN CONFIGURATIONTDFN −8VP2 SUFFIX CASE 511AKSense KS Kelvin Gate1GNDV DD EN I MEAS (Top View)MARKING DIAGRAMF3T = Specific Device Code L = Assembly Location Code AA = Assembly Lot Number (Last Two Digits)Y = Production Year (Last Digit)M = Production Month (1−9, O, N, D)G= Pb −Free MicrodotF3T LAA YM GDevice Package Shipping †ORDERING INFORMATIONCAT2300TDFN3,000 / Tape &ReelMarking F3T†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.SenseKSKelvin Gate ENFigure 2. Simplified Block DiagramI MEASV DDTable 1. PIN FUNCTION DESCRIPTIONPin No.Pin Name Function1Sense Connects to Sense pin of SENSEFET and directs sensed current to IMEAS output.2KS Kelvin Sense; a Kelvin connection for the current mirror control amplifier. This connection must be made directly to Sense on the SENSEFET package. Do not share any trace length with CAT2300’s Sense lead.3Kelvin Connects to Kelvin pin of the SENSEFET. Serves as the reference point for Sense lead biasing.4Gate Connects to Gate of the SENSEFET and controls SENSEFET operation.5GND Electrical ground for IC.6V DD External voltage supply for driving the gate of the SENSEFET and power supply for CAT2300 internal circuitry via an internal voltage regulator.7EN Enable: High true logic input. Turns ON SENSEFET and CAT2300’s internal circuitry. A logic LOW on EN grounds Gate, shutting off the SENSEFET and shuts down the internal current source and mirroring circuitry.8I MEASSensed current output. A resistor between I MEAS and ground develops a voltage proportional to the current flowing through the SENSEFET.PADBackside paddle is internally connected to GND. This pad may be left floating but if connected with PCB it must be to the ground plane of circuitry which is also grounded.Table 2. ABSOLUTE MAXIMUM RATINGS (Note 1)ParameterSymbol Value Unit V DD V DD6.5V Gate±15mA V K , EN, Sense, KS, Kelvin, I MEAS 6.5V Junction Temperature150°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Guaranteed by design.Table 3. RECOMMENDED OPERATING CONDITIONSParameterSymbol Value Unit V K V K 0.9 to 1.5V V DDV DD 5V Maximum Junction Temperature T JUNCTION 125°C Ambient Temperature RangeT AMBIENT−40 to +85°CTable 4. PACKAGE THERMAL PERFORMANCEPackage Symbol Test Conditions Min Typ Max UnitTDFN−8q JA1 oz Copper Thickness, 100 mm2160°C/W q JC35SOIC−8q JA1 oz Copper Thickness, 100 mm2160°C/W q JC25Table 5. DC ELECTRICAL CHARACTERISTICS(V K = 0.9 – 1.5 V; V DD = +5 V; T AMBIENT =−40°C to +85°C, T JUNCTION =−40°C to +125°C, unless otherwise specified.)Parameter Symbol Test ConditionsLimitsUnits Min Typ MaxKelvin voltage V K0.9 1.5V Gate Drive input voltage V DD 4.5 5.5V Supply Current on V DD pin I VDD EN = logic 01m AEN = logic 16577100m A Gate drive Sourcing I GATE V GATE = V DD– 1 V−235−280−330m A Gate drive Sinking V GATE = 0.6 V79.613mA Offset Voltage V OS V OS = V KELVIN− V SENSEV K = 0.9 V to 1.5 V±150±300m VInput Bias Current;Kelvin and KS inputsI K100150nA Power Supply Rejection Ratio PSRR70db I MEAS output current I MEAS070mA Output voltage of I MEAS amplifier V O_IM0V K – 0.1V LOGICLow level input voltage V IL EN0.9 1.1 1.26V High level input voltage V IH EN 1.4 1.65 1.9V Hysteresis0.55V Low level input current I IL EN, V DD = 0 V or 5.5 V2m A High level input current I IH EN, V DD = 0 V or 5.5 V2m A Table 6. AC OPERATING CHARACTERISTICS(V K = 0.9 V – 1.5 V; V DD = 5 V; T AMBIENT =−40°C to +85°C, T JUNCTION =−40°C to +125°C, unless otherwise specified.)Parameter Symbol Test ConditionsLimitsUnits Min Typ MaxI MEAS output rise time t R 20 W, 100 pF, V K = 1.5 VI SENSE : 2 mA – 70 mA 38m sI MEAS output fall time t F33m s I MEAS Settling time t S EN = Logic 0³1, I SENSE = 1 mA30m sEN = Logic 0³1, I SENSE = 70 mA50m sTYPICAL PERFORMANCE CHARACTERISTICSFigure 3. Load Step: 1 A – 10 A50 m s / divI BusV MEASPIN DESCRIPTIONSenseSense connects directly to the SENSEFET’s Sense pin and directs the sensed current to the I MEAS output. Sense is controlled by an amplifier with a FET follower stage to maintain Sense at exactly the Kelvin voltage, thus insuring accuracy of the SENSEFET’s mirror current.KSKS = Kelvin Sense; a Kelvin connection for the mirroring amplifier. Current measurement accuracy is dependent upon the voltage match between the SENSEFET’s Sense and Kelvin leads. To minimize voltage losses in the PCB trace between CA T2300 and the SENSEFET, a Kelvin connection for the control amplifier is provided. KS must be a dedicated connection, shared by no other circuitry , and tied directly to the Sense pin on of the SENSEFET.Figure 4. Current SenseSENSEFETSENSEFETSENSEFETCareful layout is critical in achieving full SENSEFET perfomance. PCB trace resistance can no longer be ignored as it can be in typical low current circuit designs. Microvolt offsets (m V) produce meaningful errors in current ratio tracking. A few milliohms of trace resistance carrying a few milliamps of current produces microvolts of potential difference between CAT2300 and the SENSEFET. To circumvent this error CA T2300 provides a Kelvin lead (KS)for monitoring the SENSEFET’s Sense pin. Under no circumstances should the KS connection share any portion of the current path between the sense pins of CAT2300 and the SENSEFET. Doing so will degrade measurement accuracy.KelvinKelvin connects directly to the SENSEFET’s Kelvin pin and acts the reference voltage for CAT2300’s mirroring circuit. It too must be a dedicated connection, shared by no other circuitry.GateGate connects to the SENSEFET’s Gate pin and controls the SENSEFET’s operation. Gate is controlled by EN: a logic 1 turns the SENSEFET ON, a logic 0 turns it OFF.When ON, voltage is applied to the SENSEFET’s gate via a current source inside CAT2300.By controlling the gate drive current a controlled turn-ON is achieved. Faster turn-on times can be done by adding a supplemental current source to augment the internal current source. Placing a resistor between V DD and Gate will provide extra current and boost turn-on speeds.For a softer turn-on characteristic, add capacitance between the SENSEFET’s Gate and Source pins;approximately 1 nF for every ms of increased delay.When switching OFF the SENSEFET, Gate provides a strong pull-down, 7.5 mA typical, so the SENSEFET will be switched off quickly.V DDV DD provides gate drive for the SENSEFET and power for CAT2300’s internal circuitry and must be +5 V .I MEAS I MEAS is the mirror current output. Placing a resistor between I MEAS and ground produces a voltage proportional to I BUS . The maximum voltage producible at IMEAS is the Kelvin voltage (V K ) – 0.1 V . This sets a limitation on the maximum value of R MEAS .R MEAS +ǒV K *0.1V ǓI SENSE+CSRǒV K *0.1V ǓI buswhere:CSR = Current Sensing Ratio taken from the SENSEFET data sheet.I bus = Max current through the SENSEFET.ENEnable is a high true logic input controlling the SENSEFET’s ON/OFF state. A logic high on EN turns the switch ON; a logic low turns it OFF.Bus turn-ON time is controlled by the FET’s input gate capacitance and the drive current applied to the gate.To minimize power consumption EN disables the internal gate drive current source and current mirroring circuitry whenever the SENSEFET is OFF.ENFigure 5. Typical ApplicationV DDV MEASPACKAGE DIMENSIONSTDFN8, 2x3CASE 511AK −01ISSUE ATOP VIEW SIDE VIEW BOTTOM VIEWFRONT VIEWA1Notes:(1) All dimensions are in millimeters.(2) Complies with JEDEC MO-229.SYMBOLMIN NOM MAX A 0.700.750.80A10.000.020.05A30.20 REFb 0.200.250.30D 1.90 2.00 2.10D2 1.30 1.40 1.50E 3.00E2 1.201.30 1.40e 2.900.50 TYP3.10L0.200.300.40A20.450.550.65Example of Ordering Information (Notes 2 − 5)Prefix Device #Suffix ORDERING INFORMATIONPart Number Temperature Range Package Quantity per Reel (Note 6)Package MarkingCAT2300VP2−GT3−40°C to +85°CTDFN3,000F3T2.All packages are RoHS −compliant (Lead −free, Halogen −free).3.The standard lead finish is NiPdAu pre −plated (PPF).4.The device used in the above example is a CAT2300VP2−GT3 (TDFN, NiPdAu, Tape & Reel, 3,000).5.For additional package and temperature options, please contact your nearest ON Semiconductor Sales office.6.For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.SENSEFET is a registered trademark of Semiconductor Components Industries, LLCPUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMICAT2300VP2-GT3。

PVD2352N;中文规格书,Datasheet资料

Data Sheet No. PD10053 revISeries PVD33N & PbFMicroelectronic Power ICHEXFET ® Power MOSFET Photovoltaic RelaySingle-Pole, Normally-Open0-300V DC, 240mAGeneral DescriptionThe PVD33 Series DC Relay (PVD) is a single-pole,normally open, solid-state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes International Rectifier’s HEXFET power MOSFET as the output switch, driven by an integrated circuit photovoltaic generator of novel construction. The output switch is controlled by radiation from a GaAlAs light emitting diode (LED), which is optically isolated from the photovoltaic generator.The PVD33 Series overcomes the limitations of both conventional electromechanical and reed relays by offering the solid state advantages of long life, fast operating speed, low pick up power, bounce-free operation, low thermal offset voltages and miniature package. These advantages allow product improvement and design innovations in many applications such as process control, multiplexing,automatic test equipment and data acquisition.The PVD33 can switch analog signals from thermocouple level to 300 Volts peak DC. Signal frequencies into the RF range are easily controlled and switching rates up to 500Hz are achievable. The extremely small thermally generated offset voltages allow increased measurement accuracies.These relays are packaged in 8-pin, molded DIP packages and available with either thru-hole or surface-mount (“gull-wing”) leads, in plastic shipping tubes.Applications§Process Control §Data Acquisition §Test Equipment§Multiplexing and ScanningFeatures§ Bounce-Free Operation §1010 Off-State Resistance §1,000 V/µsec dv/dt § 5 mA Input Sensitivity §4,000 V RMS I/O Isolation §Solid-State Reliability §UL Recognized §ESD Tolerance:4000V Human Body Model 500V Machine Model(HEXFET is the registered trademark for International Rectifier Power MOSFETs)Part IdentificationPVD2352N & PbF PVD3354N & PbFPVD2352NS & PbF PVD3354NS & PbFsurface-mount (gull-wing) 1thru-holeOBSOLETESeries PVD33N & PbF 2Electrical Specifications (-40°C ≤ T A ≤ +85°C unless otherwise specified )International Rectifier does not recommend the use of this product in aerospace, avionics, military or life support ers of this International Rectifier product in such applications assume all risks of such use and indemnify International Rectifier against all damages resulting from such use.Series PVD33N & PbF3Figure 1. Current Derating CurvesFigure 2. Typical Control Current RequirementsFigure 4. Typical On-ResistanceR D (o n ) (N o r m a l i z e d25o C )I LED (mA)M a x . L o a d C u r r e n t (m A )Ambient Temperature (°C)5 mA Control l D = 50 mASeries PVD33N & PbF 4I D O f f /I D O f f 25°CFigure 5. Normalized Off-State LeakageFigure 6. Input Characteristics(Current Controlled)Figure 7.Typical Delay TimesFigure 8. Delay Time DefinitionsLED Forward Voltage Drop (Volts DC)I n p u t C u r r e n t (m A )Ambient Temperature (°C)Series PVD33N & PbFWiring DiagramIR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105Data and specifications subject to change without notice. 2/2008 6分销商库存信息: IRPVD2352N。

AT45DB321D-SU;AT45DB321D-SU-2.5;AT45DB321D-MU;AT45DB321D-TU;AT45DB321D-MWU;中文规格书,Datasheet资料

All programming and erase cycles are self timed.
Figure 1-1. Pin configurations and pinouts.
MLF(1) (VDFN) Top View
SI 1 SCK 2 RESET 3
CS 4
8 SO 7 GND 6 VCC 5 WP
To allow for simple, in-system reprogrammability, the AT45DB321D does not require high input voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB321D is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the serial input (SI), serial output (SO), and serial clock (SCK) lines.
Note:
TSOP package is not recommended for new designs. Future die shrinks will support 8-pin packages only.
/
Atmel AT45DB321D
2
3597Q–DFLASH–6/11
A NC NC NC NC
B NC SCK GND VCC NC

NUC123中文手册

NuMicro NUC123 规格书
ARM Cortex™-M0 32位微控制器
NuMicro™ 家族 NUC123 系列规格书
The information described in this document is the exclusive intellectual property of Nuvoton Technology Corporation and shall not be reproduced without permission from Nuvoton.
5.3
系统管理器 .................................................................................................................... 28
5.3.1 5.3.2 5.3.3 概述 ................................................................................................................................ 28 系统复位 ......................................................................................................................... 28 系统电源分配 .................................................................................................................. 28

PCW1J-C24-BAB103;PCW1J-C24-BAB104;PCW1D-B16-MAB753;PCW1D-B24-NAD104;中文规格书,Datasheet资料

ห้องสมุดไป่ตู้
CO M
■
Linear or audio taper versions
*R oH S
PC - “Slimline” 22 mm Square Single Turn Panel Control
Electrical Characteristics
Standard Resistance Range Linear Tapers.....................................................................................................................................................................................500 ohms to 1 megohm Audio Tapers....................................................................................................................................................................................1 K ohms to 500 K ohms Total Resistance Tolerance ...............................................................................................................................................................................................±20 % Independent Linearity .........................................................................................................................................................................................................±5 % Absolute Minimum Resistance........................................................................................................................................................................5 ohms maximum Effective Electrical Angle ............................................................................................................................................................................................270 ° ± 5 ° Contact Resistance Variation ..................................................................................................................................................................7 % of total resistance Dielectric Withstanding Voltage (MIL-STD-202, Method 301) Sea Level ................................................................................................................................................................................................1,000 VAC minimum 70,000 Feet ................................................................................................................................................................................................500 VAC minimum Insulation Resistance (500 V) ....................................................................................................................................................................1,000 ohms minimum Power Rating @ 70 ºC (Voltage Limited by Power Dissipation or 350 VAC, Whichever is Less) Linear ........................................................................................................................................................................................................................ .75 watt Audio ........................................................................................................................................................................................................................ .25 watt Theoretical Resolution.....................................................................................................................................................................................Essentially infinite

NJW1302G;NJW3281G;中文规格书,Datasheet资料

Bandwidth Product
VCE = 5 V
125°C
25°C 100
-30°C
125°C
25°C 100
-30°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10 0.01
1000 100
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
125°C
-30°C
-30°C
125°C
0.01
0.01
0.1
1
0.01
10
100
0.01
0.1
1
10
100
IC, COLLECTER CURRENT (A)
IC, COLLECTER CURRENT (A)
Figure 9. VCE(sat), Collector-Emitter Saturation Voltage
5A
5A 3A
1A 1A
0.1
0.1
0.5 A
3A
IC = 0.1 A
0.5 A
IC = 0.1 A
0.01 0.001
TJ = 25°C
0.01
0.1
0.01
1
0.001
IB, BASE CURRENT (A)
Figure 7. Saturation Region
TJ = 25°C
0.01
0.1
1
Adc
4
-
-
-
75
-
150
75
-
150
75
-
150
60

DS1603;中文规格书,Datasheet资料

Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device may be simultaneously available through various sales channels. For information about device errata, click here: /errata .FEATURES§ Two 32-bit counters keep track of real -time and elapsed time§ Counters keep track of seconds for over 125 years§ Battery powered counter counts seconds from the time battery is attached until V BAT is less than 2.5V§ V CC powered counter counts seconds while V CC is above V TP and retains the count in the absence of V CC under battery backup power § Clear function resets selected counter to 0 § Read/write serial port affords low pin count § Powered internally by a lithium energy cell that provides over 10 years of operation§ One-byte protocol defines read/write, counter address and software clear function§ Self-contained crystal provides an accuracy of ±2 min per month§ Operating temperature range of 0°C to +70°C § Low-profile SIP module§ Underwriters Laboratory (UL) recognized PIN ASSIGNMENTPIN DESCRIPTIONRST- Reset CLK - ClockDQ - Data Input/Output GND - Ground V CC - +5VOSC - 1Hz Oscillator Output NC- No ConnectDESCRIPTIONThe DS1603 is a real -time clock/elapsed time counter designed to count seconds when V CC power is applied and continually count seconds under battery backup power with an additional counter regardless of the condition of V CC . The continuous counter can be used to derive time of day, week, month, and year by using a software algorithm. The V CC powered counter will automatically record the amount of time that V CC power is applied. This function is particularly useful in determining the operational time of equipment in which the DS1603 is used. Alternatively, this counter can also be used under software control to record real -time events. Communication to and from the DS1603 takes place via a 3-wire serial port. A 1-byte protocol selects read/ write functions, counter clear functions and oscillator trim. The device contains a 32.768kHz crystal that will keep track of time to within ±2 min/mo. An internal lithium energy source contains enough energy to power the continuous seconds counter for over 10 years.OPERATIONThe main elements of the DS1603 are shown in Figure 1. As shown, communications to and from the elapsed time counter occur over a 3-wire serial port. The port is activated by driving RST to a high state.V CC RST DQ NC CLK OSC GND DS1603Elapsed Time Counter Moduleselect, register clear, and oscillator trim information. Each bit is serially input on the rising edge of the clock input. After the first eight clock cycles have loaded the protocol register with a valid protocol additional clocks will output data for a read or input data for a w rite. V CC must be present to access the DS1603. If V CC < V TP, the DS1603 will switch to internal power and disable the serial port to conserve energy. When running off of the internal power supply, only the continuous counter will continue to count and the counter powered by V CC will stop, but retain the count, which had accumulated when V CC power was lost. The 32-bit V CC counter is gated by V CC and the internal 1Hz signal.PROTOCOL REGISTERThe protocol bit definition is shown in Figure 2. Valid protocols and the resulting actions are shown in Table 1. Each data transfer to the protocol register designates what action is to occur. As defined, the MSB (bit 7 which is designated ACC) selects the 32-bit continuous counter for access. If ACC is a logical 1 the continuous counter is selected and the 32 clock cycles that follow the protocol will either read or write this counter. If the counter is being read, the contents will be latched into a different register at the end of protocol and the latched contents will be read out on the next 32 clock cycles. This avoids reading garbled data if the counter is clocked by the oscillator during a read. Similarly, if the counter is to be written, the data is buffered in a register and all 32 bits are jammed into the counter simultaneously on the rising edge of the 32nd clock. The next bit (bit 6 which is designated AVC) selects the 32–bit V CC active counter for access. If AVC is a logical 1 this counter is selected and the 32 clock cycles that follow will either read or write this counter. If both bit 7 and bit 6 are written to a logic high, all clock cycles beyond the protocol are ignored and bit 5, 4, and 3 are loaded into the oscillator trim register. A value of binary 3 (011) will give a clock accuracy of ±120 seconds per month at +25°C. Increasing the binary number towards 7 will cause the real-time clock to run faster. Conversely, lowering the binary number towards 0 will cause the clock to run slower. Binary 000 will stop the oscillator completely. This feature can be used to conserve battery life during storage. In this mode the internal power supply current is reduced to 100 nA maximum. In applications where oscillator trimming is not practical or not needed, a default setting of 011 is recommended. Bit 2 of protocol (designated CCC) is used to clear the continuous counter. When set to logic 1, the continuous counter will reset to 0 when RST is taken low. Bit 1 of protocol (designated CVC) is used to clear the V CC active counter. When set to logical 1, the V CC active counter will reset to 0 when RST is taken low. Both counters can be reset simultaneously by setting CCC and CVC both to a logical 1. Bit 0 of the protocol (designated RD) determines whether the 32 clocks to follow w ill write a counter or read a counter. When RD is set to a logical 0 a write action will follow when RD is set to a logical 1 a read action will follow. When sending the protocol, 8 bits should always be sent. Sending less than 8 bits can produce erroneous results. If clearing the counters or trimming the oscillator, the data transfer can be terminated after the 8-bit protocol is sent. However, when reading or writing the counters, 32 clock cycles should always follow the protocol.RESET AND CLOCK CONTROLAll data transfers are initiated by driving the RST input high. The RST input has two functions. First, RST turns on the serial port logic, which allows access to the protocol register for the protocol data entry. Second, the RST signal provides a method of terminating the protocol transfer or the 32-bit counter transfer. A clock cycle is a sequence of a rising edge followed by a falling edge. For write inputs, data must be valid during the rising edge of the clock. Data bits are output on the falling edge of the clock when data is being read. All data transfers terminate if the RST input is transitioned low and the DQ pin goes to a high-impedance state. RST should only be transitioned low while the clock is high to avoid disturbing the last bit of data. All data transfers must consist of 8 bits when transferring protocol only or 8 + 32 bits when reading or writing either counter. Data tran sfer is illustrated in Figure 3.DATA INPUTFollowing the 8-bit protocol that inputs write mode, 32 bits of data are written to the selected counter on the rising edge of the next 32 CLK cycles. After 32 bits have been entered any additional CLK cycles will be ignored until RST is transitioned low to end data transfer and then high again to begin new data transfer.DATA OUTPUTFollowing the eight CLK cycles that input read mode protocol, 32 bits of data will be output from the selected counter on the next 32 CLK cycles. The first data bit to be transmitted from the selected 32-bit counter occurs on the falling edge after the last bit of protocol is written. When transmitting data from the selected 32-bit counter, RST must remain at high level as a transition to low level will terminate data transfer. Data is driven out the DQ pin as long as CLK is low. When CLK is high the DQ pin is tristated. OSCILLATOR OUTPUTPin 6 of the DS1603 module is a 1Hz output signal. This signal is present only when V CC is applied and greater than the internal power supply. However, the output is guaranteed to meet TTL requirement only while V CC is within normal limits. This output can be used as a 1-second interrupt or time tick needed in some applications.INTERNAL POWERThe internal battery of the DS1603 module provides 35mAh and will run the elapsed time counter for over 10 years in the absence of power.PIN DESCRIPTIONSV CC, GND – DC power is provided to the device on these pins. V CC is the +5V input. When 5V is applied within normal limits, the device is fully accessible and data can be written and read. When a 3V battery is connected to the device and V CC is below 1.25 x V BAT, reads and writes are inhibited. As V CC falls below V BAT the continuous counter is switched over to the internal battery.CLK (Serial Clock Input) – CLK is used to synchronize data movement on the serial interface.DQ (Data Input/Output) – The DQ pin is the bi-directional data pin for the 3-wire interface.RST (Reset) – The reset signal must be asserted high during a read or a write.OSC (One Hertz Output Signal) – This signal is only present when Vcc is at a valid level and the oscillator is enabled.Figure 1. ELAPSED TIME COUNTER BLOCK DIAGRAMFigure 2. PROTOCOL BIT MAP7 6 5 4 3 2 1 0ACC AVC OSC2 OSC1 OSC0 CCC CVC RDTable 1. VALID PROTOCOLSPROTOCOLACTIONACC AVC OSC2 OSC1 OSC0 CCC CVC RDFUNCTION ReadContinuous Counter 1 0 X X X X X 1Output continuouscounter on the 32 clocksfollowing protocol.Oscillator trim registeris not updated. Countersare not reset.WriteContinuous Counter 1 0 X X X X X 0Input data to continuouscounter on the 32 clocksfollowing protocol.Oscillator trim registeris not updated. Countersare not reset.Read V CCActive Counter 0 1 X X X X X 1Output V CC activecounter on the 32 clocksfollowing protocol,oscillator trim registeris not updated. Countersare not reset.Write V CCActive Counter 0 1 X X X X X 0Input data to continuouscounter on the 32 clocksfollowing protocol.Oscillator trim registeris not updated. Countersare not reset.ClearContinuous Counter 0 0 X X X 1 X XResets the continuouscounter to all zeros atthe end of protocol.Oscillator trim registeris not updated.Clear V CCActive Counter 0 0 X X X X 1 XResets the V CC activecounter to all zeros atthe end of protocol.Oscillator trim registeris not updated.Set Oscillator Trim Bits 1 1 A B C X X 0Sets the oscillator trimregister to a value ofABC. Counters areunaffected.X = Don’t CareFigure 3. DATA TRANSFERTIMING DIAGRAM: READ/WRITE DATA TRANSFERNote: t CL, t CH, t R, and t F apply to both read and write data transfer.ABSOLUTE MAXIMUM RATINGSVoltage Range on Any Pin Relative to Ground -0.3V to +7.0VOperating Temperature Range 0°C to +70°CStorage Temperature Range -40°C to +70°CSoldering Temperature Range See IPC/JEDEC J-STD-020A (See Note 11)This is a stress rating only and functional operation of the device at these or any other conditions beyond t h ose indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time can affect reliability.RECOMMENDED DC OPERATING CONDITIONS (0°C to +70°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Supply Voltage V CC 4.5 5.0 5.5 V 1 Logic 1 Input V IH 2.0 V CC + 0.3 V 1 Logic 0 Input V IL-0.3 0.8 V 1DC ELECTRICAL CHARACTERISTICS (0°C to +70°C; V CC = 5V ±10%) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Leakage I LI-1 +1 µAI/O Leakage I LO-1 +1 µALogic 1 Output V OH 2.4 V 2 Logic 0 Output V OL0.4 V 3 Active Supply Current I CC 1 mA 4 Timekeeping Current I CC150 µA 5 Battery Trip Point V TP 3.0 4.5 V 9 CAPACITANCE (T A = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance C I 5 pFI/O Capacitance C I/O10 pF(T A = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Expected Datat DR10 years 10 Retention TimeNOTES:1) All voltages are referenced to ground.2) Logic 1 voltages are specified at a source current of 1mA.3) Logic 0 voltages are specified at a sink current of 4mA.4) I CC is specified with the DQ pin open.5) I CC1 is specified with V CC at 5.0V and RST = GND.6) Measured at V IH= 2.0V or V IL = 0.8V.7) Measured at V OH = 2.4V or V OL - 0.4V.8) Load capacitance = 50pF.9) Battery trip point is the point at which the V CC powered counter and the serial port stops operation.The battery trip point drops below the minimum once the internal lithium energy cell is exhausted. 10) The expected t D R is defined as accumulative time in the absence of V CC with the clock oscillatorrunning.11) Real-time clock modules can be successfully processed through conventional wave-solderingtechniques as long as temperature exposure to the lithium energy source contained within does not exceed +85°C. Post-solder cleaning with water-washing techniques is acceptable, provided that ultrasonic vibration is not used.DS1603DS1603 7-PIN MODULEPKG7-PIN DIM MIN MAX A IN. MM 0.830 21.08 0.850 21.59 B IN. MM 0.650 16.51 0.670 17.02 C IN. MM 0.310 7.87 0.330 8.38 D IN. MM 0.015 0.38 0.030 0.76 E IN. MM 0.110 2.79 0.140 3.56 F IN. MM 0.015 0.38 0.021 0.53 G IN. MM 0.090 2.29 0.110 2.79 H IN. MM 0.105 2.67 0.135 3.43 J IN. MM 0.360 9.14 0.390 9.91分销商库存信息: MAXIMDS1603。

VX-5-1C23;VX-52-1A3;VX-52-1C23;VX-01-1C23;VX-56-1C23;中文规格书,Datasheet资料

Snap Action Switch VX135Miniature Snap Action Switch•Compact snap action switch with low force operation •Wide variation extends from microload to 5 A switching current, with shapes identical to those of the V-series Miniature Basic Snap Action Switch.•Internal hinge lever mechanism assures outstanding con-tact reliability •RoHS CompliantOrdering InformationModel Number LegendActuatorTerminal StyleOF max.Rated current5 A0.1 APin plungerA25 gf VX-5-1A2 VX-01-1A250 gf VX-5-1A3 VX-01-1A3C225 gf VX-5-1C22 VX-01-1C2250 gf VX-5-1C23 VX-01-1C23Short hinge leverA 50 gfVX-51-1A3VX-011-1A3C2VX-51-1C23 VX-011-1C23Hinge leverA 30 gfVX-52-1A3 VX-012-1A3C2VX-52-1C23 VX-012-1C23Long hinge leverA 20 gfVX-53-1A3 VX-013-1A3C2VX-53-1C23 VX-013-1C23Simulated roller leverA 30 gfVX-54-1A3 VX-014-1A3C2VX-54-1C23 VX-014-1C23Short hinge roller leverA 60 gfVX-55-1A3 VX-015-1A3C2VX-55-1C23 VX-015-1C23Hinge roller leverA 30 gfVX-56-1A3 VX-016-1A3C2VX-56-1C23 VX-016-1C23136Snap Action Switch VXSpecifications■CharacteristicsNote:1.Data shown are of initial value.2.The dielectric strength shown is measured using a separator between the switch and metal mounting plate.3.For the pin plunger models, the above values apply for use at the free position and total travel position. For lever models, they apply at the total travel position. Contact separation time is within 1 ms.■Ratings (reference values)Note:1.Inductive load has a power factor of 0.4 min. (AC) and a time constant of 7 milliseconds max. (DC).mp load has an inrush current of 10 times the steady-state current3.The electrical rating applies under the following test conditions:Ambient T emperature = 20±2°C, Ambient Humidity = 65±5%, Operating frequency = 30 operations/minute■Approved StandardsUL Recognized (File No. E41515) CSA Certified (File No. LR21642)EN61058-1 - - VDE approval (File No. 124761)T esting conditions: 5E4 (50,000 operations), T105 (0°C to 105°C)■Contact SpecificationsNote:Minimum applicable loads are indicated by N standard refer-ence values. This value represents the failure rate at a 60%(λ60) reliability level (JIS C5003).The equation λ60=0.5 x 10-6 / operations indicates that a failure rate of 1/2,000,000 operations can be expected at a reliability level of 60%ItemVX-5VX-01Operating speed 0.1 mm to 1 m/s (pin plunger models)Operating frequencyMechanical: 600 operations per minute Electrical: 30 operations per minute Contact resistance 30 m Ω max.50 m Ω max.Insulation resistance100 M Ω min. at 500 VDCDielectric strength (see note 2)1,000 VAC, 50/60 Hz for 1 minute between terminals of same polarity1,500 VAC, 50/60 Hz for 1 minute between current-carrying metal parts and ground and between each terminal and non-current-carrying metal parts Vibration resistance (see note 3)Malfunction: 10 to 55 Hz, 1.5 mm double amplitude Shock resistance (see note 3)Destruction: 400 m/s 2 (approx. 40G) max. Malfunction: 100 m/s 2 (approx. 10G) max Degree of protectionIEC IP40Degree of protection against electric shock Class I Proof tracking index175Ambient operating temperature -25°C to 80°C (at 60% RH max.) with no icing Ambient operating humidity 85% max (for 5°C to 35°C)Service life Mechanical50,000,000 operations min. (60 ops/minute)10,000,000 operations min. (60 ops/minute)Electrical500,000 operations min. (30 ops/minute)1,000,000 operations min. (30 ops/minute)WeightApprox. 6.2 g (pin plunger models)Type Rated voltage Resistive load Lamp load Inductive loadNC NO NC NO NC NO5 A250 VAC 5 - - -- - -125 VAC 5 0.548 VDC 5 3430 VDC 5 34125 VDC 0.40.10.4250 VDC 0.30.050.20.1 A125 VAC 0.1- - -- - -8 VDC 0.1- - -- - -30 VDC0.1- - -- - -Rated Voltage VX-5VX-01125 VAC 5 A 0.1 A 250 VAC 5 A - - -30 VDC- - -0.1 ARated Voltage VX-5VX-01125 VAC 5 A 0.1 A 250 VAC5 A- - -ItemVX-5VX-01Specification Rivet Crossbar MaterialSilver alloy Gold alloy Gap (standard value)0.5 mmInrush currentN C: 15A max.N O: - - -- - -Minimum applicable load (see note)160 mA at 5 VDC 1 mA at 5 VDCSnap Action Switch VX137Engineering Data■Mechanical service life■Electrical service life■MountingPanel MountingAll switches may be panel mounted using M3 mounting screws withplane washers or spring washers to securely mount the switch.Tighten the screws to a torque of 0.39 to 0.59 N ·m.■Contact FormVX-5N u m b e r o f o p e r a t i o n s (x 10 )6N u m b e r o f o p e r a t i o n s (x 10 )6VX-01Am b ient temperat u re: 20±2°C Am b ient h u midity: 65±5%W itho u t loadOperating fre qu ency: 600 operations/minF u ll strokeRated v al u eof OT200100501000.20.40.60.8 1.0 1.2 1.4(1.6) 1.8F u ll strokeRated v al u e of OT200100501000.20.40.60.8 1.0 1.2 1.4(1.6) 1.8O v ertra v el (mm)O v ertra v el (mm)Am b ient temperat u re: 20±2°C Am b ient h u midity: 65±5%W itho u t loadOperating fre qu ency: 600 operations/min125 V AC, 30 V DCAm b ient temperat u re: 20±2°C Am b ient h u midity: 65±5%W itho u t loadOperating fre qu ency: 60 operations/min cos φ = 1, 250 V AC5210.50.30.100.5123456789101112105210.50.30.100.010.020.050.080.1S w itching c u rrent (A)S w itching c u rrent (A)Am b ient temperat u re: 20±2°CAm b ient h u midity: 65±5%W itho u t loadOperating fre qu ency: 60 operations/min cos φ = 1, 250 V ACw o, 3.1-dia. mo u nting holes or M3 scre w holes22.2 ± 0.110.3 ± 0.1SPST-NCSPST-NOCOMNONC COMNCCOMNO138Snap Action Switch VXDimensions■TerminalsNote:1.Unless otherwise specified, all units are in millimeters and a tolerance of ±0.4 mm applies to all dimensions2.The following illustrates the SPDT contact form■Dimensions and Operating CharacteristicsNote:1.Unless otherwise specified, all units are in millimeters and a tolerance of ±0.4 mm applies to all dimensions2.The following illustrations and dimensions are for solder terminal models. Refer to “Terminals” for models with quick-connect terminals (#187).3.The @ in the model number is for the terminal code. (A = Solder Terminal, C2 = #187 quick-connect terminal)4.The operating characteristics are for operation in the A direction(Three, solder terminals(5.5)(6.5)2.9(10)t=0.5Three, qu ick-connect terminals (#187)(5.5)(6.5)2.9(10)t=0.51.6 dia.2.4 dia.6.353.2 (see note)4.75±0.1The length to the center of the 1.6-dia. holes.1.6-dia. terminal hole6.353.24.75±0.1Three, solder terminals22.2±0.127.81.6(10)15.918.80.12.82.810.337.8±0.82.8Characteristics VX-5-1@2 VX-01-1@2VX-5-1@3VX-01-1@3OF max.25 gf 50 gf RF min. 3 gf5 gfPT max. 1.2 mm OT min.1.0 mm MD max.0.3 mm OP14.7 ± 0.4 mmThree, solder terminals3.1+0.13–0.03dia. holest = 0.5 (stainless-steel le v er)22.2±0.127.8 2.8(10)15.918.80.18.14.32.810.337.8±0.822.11.6Short Hin g e Lever ModelsVX-51-13VX-011-13ANote: The reference value applies for cases when theinstallation direction is such that the lever weight is not applied to the plungerCharacteristics VX-51-1@3VX-011-1@3OF max.50 gf (reference value)RF min. 4 gf (reference value)PT max. 1.6 mm OT min.0.8 mm MD max.0.5 mm OP15.2 ± 0.5 mmThree, solder terminals3.1+0.13–0.03dia. holes3.1+0.13–0.033.40.15 dia.t = 0.5 (stainless-steel le v er)22.2±0.127.8 1.6(10)15.918.810.3±0.1OPPT8.14.32.810.337.8±0.835.6±0.82.8Hin g e Lever ModelsVX-52-13VX-012-13Characteristics VX-52-1@3VX-012-1@3OF max.30 gf RF min.- - -PT max. 4.0 mm OT min. 1.6 mm MD max.0.8 mm OP15.2 ± 1.2 mmSnap Action Switch VX139Note:1.Unless otherwise specified, all units are in millimeters and a tolerance of ±0.4 mm applies to all dimensions2.The following illustrations and dimensions are for solder terminal models. Refer to “Terminals” for models with quick-connect terminals (#187).3.The @ in the model number is for the terminal code. (A = Solder Terminal, C2 = #187 quick-connect terminal)4.Three, solder terminals3.1+0.13–0.033.4±0.15 dia.22.2±0.127.8 2.8(10)15.918.810.3±0.1OP8.12.810.337.8±0.81.6Characteristics VX-53-1@3VX-013-1@3OF max.20 gf RF min.- - -PT max.9.0 mm OT min. 3.2 mm MD max. 2.0 mm OP15.2 ± 2.6 mmSimulated Roller Lever ModelsVX-54-13VX-014-13Three, solder terminals3.1+0.13–0.03dia. holes3.1+0.13–0.033.40.15 dia.t = 0.5 (stainless-steel le v er)22.2±0.127.8 2.8(10)15.918.810.3±0.1OPPT8.14.32.810.337.8±0.832.6±0.82.8 1.63.5RACharacteristicsVX-54-1@3VX-014-1@3OF max.30 gf RF min. 2 gf PT max. 4.0 mm OT min. 1.6 mm MD max.0.8 mm OP18.7 ± 1.2 mmShort Hin g e Roller Lever ModelsVX-55-13VX-015-13Three, solder terminals4.8 dia. × 4.8 (oilless polyacetar resin roller)3.1+0.13–0.03dia. holest = 0.5 (stainless-steel le v er)22.2±0.127.8 2.8(10)15.918.80.1OPPT8.15.110.337.8±0.820.11.6ANote: The reference value applies for cases when theinstallation direction is such that the lever weight is not applied to the plungerCharacteristics VX-55-1@3VX-015-1@3OF max.60 gf (reference value)RF min. 4 gf (reference value)PT max. 1.6 mm OT min.0.8 mm MD max.0.5 mm OP20.7 ± 0.6 mmHin g e Roller Lever ModelsVX-56-13VX-016-13Three, solder terminals4.8 dia. × 4.8(oilless polyacetar resin roller)3.1+0.13–0.03dia. holes3.1+0.13–0.030.15 dia.t = 0.5 (stainless-steel le v er)22.2±0.127.8 1.6(10)15.918.810.3±0.1OP8.15.110.337.8±0.834.0±0.82.8 2.8Characteristics VX-56-1@3VX-016-1@3OF max.30 gf RF min.- - -PT max. 4.0 mm OT min. 1.6 mm MD max.0.8 mm OP20.7 ± 1.2 mm140Snap Action Switch VXPrecautions■Correct UseMounting DirectionFor a switch with an actuator, mount the switch in a direction where the actuator weight will not be applied to the switch.Since the switch is designed for a small load, its resetting force is small. Therefore, resetting failure may occur if unnecessary load is applied to the switch.OperationKeep the operation control completely separate from the actuator of the switch, and push it down fully when starting operation. Do not dis-place the operating position of the actuator when machining.Consult OMRO N in advance if the operating speed is to be extremely slow, or if the pushbutton is to be set somewhere between the free position and operating position.Mount pin pushbutton switches so that stroke of the pushbutton and the stroke of the operating control overlap on a vertical line. The stroke of the switch, after operation, should be set to 60- 90% that of standard OT (MI N operation).Using MicroloadsUsing a model for ordinary loads to switch microloads may result in faulty operation. Instead, use the models that are designed for micro-loads and that operate in the following range;H owever, even when using microload models within the operating range shown above, if inrush current or inductive voltage spikes occur when the contact is opened or closed, it may increase contact wear and so decrease the service life. Therefore, insert a contact protection circuit where necessary.■CautionsHandlingBe careful not to drop the switch. Doing so may cause damage to the switch’s internal components because it is designed for a small load.Solder Terminal ConnectionQuickly finish the soldering of the lead wire to its terminal. Use a sol-dering iron rated at 60W and preferably complete the soldering within 5 seconds.Excess wattage or prolonged heating can deteriorate the characteris-tics of the switch.Insulation DistanceWhen mounting, make sure there is sufficient insulation distance between the switch and its mounting panel. If it is insufficient, install an insulation guard or separator. Always install an insulation guard or separator when mounting the microswitch on a metallic body. Con-tact your OMRO N representative for information about insulation guards and separators.Application EnvironmentDo not use the Switch in locations that are subject to toxic gas, sili-con, excessive dust, excessive dirt, high temperatures, high humidity,sudden temperature changes, water splashes, or oil splashes.Otherwise, damage resulting by faulty contact of the Switch contacts,corrosion, or other causes, or other functional faults may occur.Depending on environmental conditions, the switch should be rechecked about 3 to 6 months after it has been assembled.Operating range for micro load models V X-01Operating range for general-load models V X-5C u rrent (mA)V o l t a g e (V )Inopera b le range 1,0001001010.1301224501mA100mA 160mA100mA0.16mA 26mASnap Action SwitchVXMEMOSnap Action Switch VXOMRON ON-LINEGlobal - USA - Cat. N o. X303-E-1Printed in USAOMRON ELECTRONIC COMPONENTS LLC55 E. Commerce Drive, Suite B Schaumburg, IL 60173847-882-228811/10 Specifications subject to change without noticeAll sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which can be found at /components/web/webfiles.nsf/sales_terms.html ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.T o convert millimeters into inches, multiply by 0.03937. T o convert grams into ounces, multiply by 0.03527.分销商库存信息:OMRONVX-5-1C23VX-52-1A3VX-52-1C23 VX-01-1C23VX-56-1C23VX-55-1C23 VX-56-1A3VX-013-1C23VX-015-1C23 VX-5-1A3VX-5-1A2VX-5-1C22 VX-51-1A3VX-01-1A2VX-01-1A3 VX-53-1A3VX-53-1C23VX-012-1A3 VX-014-1A3VX-55-1A3VX-015-1A3 VX-016-1C23VX-016-1A3VX-51-1C23 VX-01-1C22VX-54-1A3VX-54-1C23 VX-011-1A3VX-011-1C23VX-012-1C23 VX-014-1C23VX-013-1A3。

IXTL2X200N085T;中文规格书,Datasheet资料

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537
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分销商库存信息:
IXYS IXTL2X200N085T
VDS= 10 V; ID = 60 A, Note 1
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Pulse width limited by TJM IF = 50 A, VGS = 0 V, Note 1 IF = 25 A, -di/dt = 100 A/μs VR = 40 V, VGS = 0 V
Advance Technical Information
TrenchMVTM Power MOSFETs Common-Gate Pair
N-Channel Enhancement Mode Avalanche Rated

PZU5.1BA,115;PZU24BA,115;PZU6.2B2A,115;PZU7.5B3A,115;PZU3.9B1A,115;中文规格书,Datasheet资料

1.Product proﬁle1.1General descriptionGeneral-purpose Zener diodes in a SOD323(SC-76) very small Surface-Mounted Device (SMD) plastic package.1.2Features1.3ApplicationsI General regulation functions1.4Quick reference data[1]Pulse test: t p ≤300µs;δ≤0.02.[2]t p =100µs; square wave; T j =25°C prior to surge[3]Device mounted on an FR4Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.PZUxBA seriesSingle Zener diodesRev. 01 — 19 September 2008Product data sheetI Non-repetitive peak reverse power dissipation: P ZSM ≤40WI Low reverse current I R range I Total power dissipation: P tot ≤320mW I Small plastic package suitable for surface-mounted design I T olerance series:B:approximately ±5%;B1,B2,B3:approximately ±2%I AEC-Q101 qualiﬁedI Wide working voltage range:nominal 2.4V to 36V (E24range)Table 1.Quick reference data Symbol Parameter Conditions Min Typ Max Unit V F forward voltageI F =100mA[1]-- 1.1V P ZSM non-repetitive peak reverse power dissipation [2]--40W P tottotal power dissipationT amb ≤25°C [3]--320mW2.Pinning information[1]The marking bar indicates the cathode.3.Ordering information[1]The series consists of 97types with nominal working voltages from 2.4V to 36V .[2]/DG: halogen-freeTable 2.PinningPin Description Simpliﬁed outlineGraphic symbol1cathode [1]2anode21006aaa15221Table 3.Ordering informationType numberPackage NameDescriptionVersion PZU2.4BA to PZU36BA [1]SC-76plastic surface-mounted package; 2leadsSOD323PZU2.4BA/DG to PZU36BA/DG [1][2]4.MarkingTable 4.Marking codesType number[1]Marking code Type number[1]Marking codeB B1B2B3B B1B2B3PZU2.4*A X8---PZU2.4*A/DG Y8---PZU2.7*A X9XA XB-PZU2.7*A/DG Y9YA YB-PZU3.0*A XT XU XV-PZU3.0*A/DG YT YU YV-PZU3.3*A XW XX XY-PZU3.3*A/DG YW YX YY-PZU3.6*A XZ MC MD-PZU3.6*A/DG YZ NC ND-PZU3.9*A ME MF MG-PZU3.9*A/DG NE NF NG-PZU4.3*A MM MN MP MR PZU4.3*A/DG NM NN NP NRPZU4.7*A MS MT MU MV PZU4.7*A/DG NS NT NU NVPZU5.1*A MW MX MY MZ PZU5.1*A/DG NW NX NY NZPZU5.6*A LF LG LH LK PZU5.6*A/DG RF RG RH RKPZU6.2*A LL LM LN LP PZU6.2*A/DG RL RM RN RPPZU6.8*A LR LS LT LU PZU6.8*A/DG RR RS RT RUPZU7.5*A LV LW LX L Y PZU7.5*A/DG RV RW RX RYPZU8.2*A LZ CR CS CT PZU8.2*A/DG RZ ER ES ETPZU9.1*A CU CV CW CX PZU9.1*A/DG EU EV EW EXPZU10*A VA VB VC VD PZU10*A/DG WA WB WC WDPZU11*A VE VF VG VH PZU11*A/DG WE WF WG WHPZU12*A VK VL VM VN PZU12*A/DG WK WL WM WNPZU13*A VP VR VS VT PZU13*A/DG WP WR WS WTPZU14*A--VU-PZU14*A/DG--WU-PZU15*A VV VW VX VY PZU15*A/DG WV WW WX WYPZU16*A VZ X1X2X3PZU16*A/DG WZ Y1Y2Y3PZU18*A X4X5X6X7PZU18*A/DG Y4Y5Y6Y7PZU20*A XC XD XE XF PZU20*A/DG YC YD YE YFPZU22*A XG XH XK XL PZU22*A/DG YG YH YK YLPZU24*A XM XN XP XR PZU24*A/DG YM YN YP YRPZU27*A XS---PZU27*A/DG YS---PZU30*A MH---PZU30*A/DG NH---PZU33*A MK---PZU33*A/DG NK---PZU36*A ML---PZU36*A/DG NL---[1]* = B: tolerance series B, approximately±5%* = B1, B2, B3: tolerance series B1, B2, B3: approximately±2%5.Limiting values[1]t p =100µs; square wave; T j =25°C prior to surge[2]Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint.[3]Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm 2.6.Thermal characteristics[1]Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint.[2]Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm 2.[3]Soldering point of cathode tab.7.Characteristics[1]Pulse test: t p ≤300µs;δ≤0.02.Table 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit I F forward current-200mAI ZSMnon-repetitive peak reverse current[1]-see Table 8and 9P ZSM non-repetitive peak reverse power dissipation [1]-40W P tot total power dissipation T amb ≤25°C[2]-320mW [3]-490mW T j junction temperature -150°C T amb ambient temperature −55+150°C T stgstorage temperature−65+150°CTable 6.Thermal characteristics Symbol ParameterConditions Min Typ Max Unit R th(j-a)thermal resistance from junction to ambient in free air[1]--390K/W [2]--255K/W R th(j-sp)thermal resistance from junction to solder point[3]--55K/WTable 7.CharacteristicsT j =25°C unless otherwise speciﬁed.Symbol Parameter ConditionsMin Typ Max Unit V Fforward voltage[1]I F =10mA --0.9V I F =100mA--1.1V[1]f =1MHz; V R =0V[2]t p =100µs; square wave; T j =25°C prior to surgeTable 8.Characteristics per type; PZU2.4BA to PZU5.6B3A and PZU2.4BA/DG to PZU5.6B3A/DG T j =25°C unless otherwise speciﬁed.PZUxBASelWorking voltage V Z (V)Differential resistance r dif (Ω)Reverse currentI R (µA)Temperature coefﬁcient S Z (mV/K)Diode capacitance C d (pF)[1]Non-repetitivepeak reverse current I ZSM (A)[2]I Z =5mA I Z =0.5mA I Z =5mA I Z =5mA MinMax Max Max Max V R (V)Typ Max Max 2.4B 2.3 2.61000100501−1.645082.7B 2.5 2.91000100201−2.04408B1 2.5 2.75B22.65 2.93.0B 2.8 3.2100095101−2.14258B1 2.8 3.05B22.953.23.3B 3.1 3.510009551−2.44108B1 3.1 3.35B23.25 3.53.6B 3.4 3.810009051−2.43908B1 3.4 3.65B23.55 3.83.9B 3.7 4.110009031−2.53708B1 3.7 3.97B23.874.104.3B 4.01 4.4810009031−2.53508B1 4.01 4.21B2 4.15 4.34B34.28 4.484.7B 4.42 4.98008021−1.43258B1 4.42 4.61B2 4.55 4.75B34.69 4.95.1B 4.84 5.37250602 1.50.3300 5.5B1 4.84 5.04B2 4.98 5.2B35.14 5.375.6B 5.31 5.92100401 2.5 1.9275 5.5B1 5.31 5.55B2 5.49 5.73B35.675.92Table 9.Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG T j=25°C unless otherwise speciﬁed.PZUxBA Sel WorkingvoltageV Z(V)Differential resistancer dif(Ω)ReversecurrentI R(nA)TemperaturecoefﬁcientS Z(mV/K)DiodecapacitanceC d(pF)[1]Non-repetitivepeak reversecurrentI ZSM(A)[2]I Z=5mA I Z=0.5mA I Z=5mA I Z=5mAMin Max Max Max Max V R(V)Typ Max Max 6.2B 5.86 6.5380305003 2.7250 5.5B1 5.86 6.12B2 6.06 6.33B3 6.26 6.536.8B 6.477.146020500 3.5 3.4215 5.5B1 6.47 6.73B2 6.65 6.93B3 6.867.147.5B7.067.8460105004 4.0170 3.5B17.067.36B27.287.60B37.527.848.2B7.768.6460105005 4.6150 3.5B17.768.1B28.028.36B38.288.649.1B8.569.5560105006 5.5120 3.5B18.568.93B28.859.23B39.159.5510B9.4510.5560101007 6.4110 3.5 B19.459.87B29.7710.21B310.1110.5511B10.4411.56601010087.41083 B110.4410.88B210.7611.22B311.111.5612B11.4212.6801010098.41053 B111.4211.9B211.7412.24B312.0812.613B12.4713.968010100109.4103 2.5 B112.4713.03B212.9113.49B313.3713.96[1]f =1MHz; V R =0V[2]t p =100µs; square wave; T j =25°C prior to surge14B213.7014.3080101001110.4101215B 13.8415.528015501111.4992B113.8414.46B214.3414.98B314.8515.5216B 15.3717.098020501212.497 1.5B115.3716.01B215.8516.51B316.3517.0918B 16.9419.038020501314.493 1.5B116.9417.7B217.5618.35B318.2119.0320B 18.8621.0810020501516.488 1.5B118.8619.7B219.5220.39B320.2121.0822B 20.8823.1710025501718.484 1.3B120.8821.77B221.5422.47B322.2323.1724B 22.9325.5712030501920.480 1.3B122.9323.96B223.7224.78B324.5425.5727B 25.128.915040502123.473130B 283220040502326.666133B 313525*********.7600.936B343830060502733.0590.8Table 9.Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG …continued T j =25°C unless otherwise speciﬁed.PZUxBASelWorking voltage V Z (V)Differential resistance r dif (Ω)Reverse currentI R (nA)Temperature coefﬁcient S Z (mV/K)Diode capacitance C d (pF)[1]Non-repetitivepeak reverse current I ZSM (A)[2]I Z =5mA I Z =0.5mA I Z =5mA I Z =5mA MinMaxMaxMax Max V R (V)Typ Max MaxT j =25°C (prior to surge)T j =25°CFig 1.Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum valuesFig 2.Forward current as a function of forward voltage; typical valuesT j =25°C to 150°C V Z =2.4V to 4.3VT j =25°C to 150°C V Z =4.7V to 12VFig 3.Temperature coefﬁcient as a function of working current; typical valuesFig 4.Temperature coefﬁcient as a function of working current; typical values006aab21510210103P ZSM (W)1t p (s)10−410−210−3V F (V)0.610.8mbg781100200300I F (mA)00600−2−3−1mgl2732040I Z (mA)S Z (mV/K)4.33.93.63.33.02.42.702016100−55mgl2744812I Z (mA)S Z (mV/K)4.71211109.18.27.56.86.25.65.1T j =25°C V Z =2.4V to 4.3VT j =25°C V Z =4.7V to 12VFig 5.Working current as a function of working voltage; typical valuesFig 6.Working current as a function of working voltage; typical valuesT j =25°C V Z =13V to 36VFig 7.Working current as a function of working voltage; typical values006aab24610−110−2101102I Z (mA)10−3V Z (V)054231V Z(nom) (V) = 2.42.73.03.33.63.94.3006aab24710−110−2101102I Z (mA)10−3V Z (V)01410128624V Z(nom) (V) = 4.75.15.66.26.87.58.29.1101112006aab24810−110−2101102I Z (mA)10−3V Z (V)10403020V Z(nom) (V) = 1318202224273033361415168.Test information8.1Quality informationThis product has been qualiﬁed in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualiﬁcation for discrete semiconductors , and is suitable for use in automotive applications.9.Package outline10.Packing information[1]For further information and the availability of packing methods, see Section 13.Fig 8.Package outline SOD323(SC-76)03-12-17Dimensions in mm0.250.100.450.152.72.3 1.81.60.400.251.10.81.351.1512Table 10.Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number Package DescriptionPacking quantity 300010000PZU2.4BA to PZU36BA SOD3234mm pitch, 8mm tape and reel-115-135PZU2.4BA/DG to PZU36BA/DG分销商库存信息:NXPPZU5.1BA,115PZU24BA,115PZU6.2B2A,115 PZU7.5B3A,115PZU3.9B1A,115PZU20B1A,115 PZU10BA,115PZU11BA,115PZU12BA,115 PZU13BA,115PZU15BA,115PZU16BA,115 PZU18BA,115PZU2.4BA,115PZU2.7BA,115 PZU20BA,115PZU22BA,115PZU27BA,115 PZU3.0BA,115PZU3.3BA,115PZU3.6BA,115 PZU3.9BA,115PZU30BA,115PZU33BA,115 PZU36BA,115PZU4.3BA,115PZU4.7BA,115 PZU5.6BA,115PZU6.2BA,115PZU6.8BA,115 PZU5.1B1A,115PZU10B1A,115PZU10B2A,115 PZU10B3A,115PZU11B1A,115PZU11B2A,115 PZU11B3A,115PZU12B1A,115PZU12B2A,115 PZU12B3A,115PZU13B1A,115PZU13B2A,115 PZU13B3A,115PZU14B2A,115PZU15B1A,115 PZU15B2A,115PZU15B3A,115PZU16B1A,115 PZU16B2A,115PZU16B3A,115PZU18B1A,115 PZU18B2A,115PZU18B3A,115PZU2.7B1A,115 PZU2.7B2A,115PZU20B2A,115PZU20B3A,115 PZU22B1A,115PZU22B2A,115PZU22B3A,115 PZU24B1A,115PZU24B2A,115PZU24B3A,115 PZU3.0B1A,115PZU3.0B2A,115PZU3.3B1A,115 PZU3.3B2A,115PZU3.6B1A,115PZU3.6B2A,115 PZU4.3B1A,115PZU8.2B1A,115PZU8.2B2A,115。

SIB-110-02-F-S-LC;中文规格书,Datasheet资料

OPTION -LC: LOCKING CLIPS (USE LC-09-TM)(SEE NOTE 13) [N/A WITH THREADED INSERT OPTION -E, -M OR -TI] ROW SPECIFICATION -S: SINGLE (USE SIBM-XX-02-S)
.335 8.509 REF 01
.100 SINGLE INTERFACE BEAM ASSEMBLY
SIB-1XX-XX-XX-S-XX-XX
9/20/2000
SHEET 3 OF 3
/
F:\DWG\MISC\MKTG\SIB-1XX-XX-XX-S-XX-XX-MKT.SLDDRW
BY: DEAN P
FIG. 1
"A"
.150 3.810 REF
.207±.005 5.267±0.127
C3
'A'
.045 1.143 SEE NOTE 11
"A" (No OF POSITIONS -2) x .100[2.54] REF (No OF POSITIONS -1) x .100(2.54) REF
FIG. 2
THREADED INSERT ("C" PLCS)
THREADED INSERT TO BE FLUSH TO BELOW TOP OF BODY
"B" "B" REF "A" REF
SIB-XX-02-S-TI
SECTION "B"-"B"
SIB-120-02-X-S-TI SHOWN
.264 6.706 REF

SBR3A40SA-13;中文规格书,Datasheet资料

3.0A SBRSUPER BARRIER RECTIFIERSMAFeatures• Low Leakage Current • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • 150ºC Operating Junction Temperature • Lead Free Finish, RoHS Compliant (Note 1) • Green Molding Compound (No Halogen and Antimony)(Note 7)Mechanical Data• Case: SMA • Case Material: Molded Plastic, UL Flammability ClassificationRating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Lead Free Plating (Matte Tin Finish.) Solderableper MIL-STD-202, Method 208 • Polarity Indicator: Cathode Band • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.064 grams (approximate)Maximum Ratings @T A = 25°C unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.Characteristic Symbol Value UnitPeak Repetitive Reverse VoltageWorking Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V RM40 V Maximum Voltage Rate of Change (Rated V R )dv/dt 10,000 V/μs RMS Reverse Voltage V R(RMS)28 V Average Rectified Output Current (See Figure 1) I O3 A Non-Repetitive Peak Forward Surge Current 8.3msSingle Half Sine-Wave Superimposed on Rated Load I FSM45 AThermal CharacteristicsCharacteristic Symbol Value UnitMaximum Thermal Resistance Thermal Resistance Junction to Soldering (Note 2)Thermal Resistance Junction to Ambient (Note 3)Thermal Resistance Junction to Case (Note 3)R θJS R θJAR θJC 5 124 14.3 ºC/W Power Disspation (Note 3) @ T A = 25 ºC P D 1.2 WOperating and Storage Temperature Range T J , T STG-65 to +150 ºCElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit TestConditionReverse Breakdown Voltage (Note 5) V (BR)R 40 - - V I R = 0.4mAForward Voltage Drop V F-- -0.300.330.43 - 0.35 0.38 0.50 0.48 V I F = 0.5A, T J = 25ºC I F = 1.0A, T J = 25ºC I F = 3.0A, T J = 25ºC I F = 3.0A, T J = 125ºCLeakage Current (Note 5) I R - 45 80 9 250 400 40 μAμAmA V R = 5V, T J = 25ºC V R = 40V, T J = 25ºC V R = 40V, T J = 125ºCNotes:1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at /quality/lead_free.html.2. Theoretical R θJS calculated from the top center of the die straight down to the PCB cathode tab solder junction.3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per /datasheets/ap02001.pdf. Top View Bottom ViewGreenFig. 1 Forward Power Dissipation1I , AVERAGE FORWARD CURRENT (A)F(AV)P , P O W E R D I S S I P A T I O N (W )D Fig. 2 Typical Forward CharacteristicsV , INSTANTANEOUS FORWARD VOLTAGE (V)F 1101001,00010,000I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (m A )FFig. 3 Typical Reverse Characteristics100510152025303540V , INSTANTANEOUS REVERSE VOLTAGE (V)R I , I N S T A N T A N E O U S R E V E R S E C U R R E N T (m A )R Fig. 4 Total Capacitance vs. Reverse Voltage V , DC REVERSE VOLTAGE (V)R C , T O T A L C A P A C I T A N C E (p F )T 100Fig. 5 Forward Current Derating Curve0.51.01.52.02.53.03.5T , AMBIENT TEMPERATURE (°C)A I , A V E R A G E F O R W A R D C U R R E N T (A )F (A V )Fig. 6 Operating T emperature DeratingV , DC REVERSE VOLTAGE (V)R T , D E R A T E D A M B I E N T T E M P E R A T U R E (°C )AOrdering Information(Note 8)Part Number Case PackagingSBR3A40SA-13 SMA 5000/Tape & Reel Notes: 8. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationPackage Outline DimensionsSuggested Pad LayoutSMADim Min MaxA 2.29 2.92B 4.00 4.60C 1.27 1.63D 0.15 0.31E 4.80 5.59G 0.050.20H 0.761.52J 2.01 2.30All Dimensions in mmDimensions Value (in mm)Z 6.5G 1.5X 1.7Y 2.5C 4.0SV 4 = Product Type Marking Code= Manufacturers’ code markingYWW = Date Code MarkingY = Last digit of year (ex: 7 for 2007)WW = Week code 01 to 52YWWIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2009, Diodes Incorporated分销商库存信息: DIODESSBR3A40SA-13。

WP132XIT;中文规格书,Datasheet资料

T-1 (3mm) SOLID STATE LAMP
Part Number: WP132XIT High Efficiency Red
Features
z Low power consumption. z Popular T-1 diameter package. z General purpose leads. z Reliable and rugged. z Long life-solid state reliability. z Available on tape and reel. z RoHS compliant.
SPEC NO: DSAF2130 APPROVED: WYNEC
REV NO: V.4 CHECKED: Allen Liu
DATE: FEB/28/2011 DRAWN: J.Yu
PAGE: 1 OF 6 ERP: 1101009206
/
Selection Guide
High Efficiency Red
WP132XIT
SPEC NO: DSAF2130 APPROVED: WYNEC
REV NO: V.4 CHECKED: Allen u
DATE: FEB/28/2011 DRAWN: J.Yu
PAGE: 3 OF 6 ERP: 1101009206
/
Notes: 1.Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V.
Absolute Maximum Ratings at TA=25°C
Parameter Power dissipation DC Forward Current Peak Forward Current [1] Reverse Voltage Operating/Storage Temperature Lead Solder Temperature [2] Lead Solder Temperature [3]

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Electrical / Optical Characteristics at TA=25°C
Symbol λpeak λD [1] Δλ1/2 C VF [2] IR Parameter Peak Wavelength Dominant Wavelength Spectral Line Half-width Capacitance Forward Voltage Reverse Current Device Pure Orange Pure Orange Pure Orange Pure Orange Pure Orange Pure Orange Typ. 607 610 35 15 2.05 2.5 10 Max. Units nm nm nm pF V uA Test Conditions IF=20mA IF=20mA IF=20mA VF=0V;f=1MHz IF=20mA VR = 5V
Description
The Pure Orange source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Pure Orange Light Emitting Diode.
Package Dimensions
Pure Orange
WP132XNT
SPEC NO: DSAF2133 APPROVED: WYNEC
REV NO: V.3 CHECKED: Allen Liu
DATE: FEB/28/2011 DRAWN: J.Yu
PAGE: 3 OF 6 ERP: 1101001113
/
PACKING & LABEL SPECIFICATIONS
WP132XNT
SPEC NO: DSAF2133 APPROVED: WYNEC
REV NO: V.3 CHECKED: Allen Liu
DATE: FEB/28/2011 DRAWN: J.Yu
PAGE: 4 OF 6 ERP: 1101001113
Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base. 3. 5mm below package base.
Pure Orange 62.5 25 145 5 -40°C To +85°C 260°C For 3 Seconds 260°C For 5 Seconds
Units mW mA mA V
SPEC NO: DSAF2133 APPROVED: WYNEC
REV NO: V.3 CHECKED: Allen Liu
DATE: FEB/28/2011 DRAWN: J.Yu
PAGE: 2 OF 6 ERP: 1101001113
/
SPEC NO: DSAF2133 APPROVED: WYNEC
REV NO: V.3 CHECKED: Allen Liu
DATE: FEB/28/2011 DRAWN: J.Yu
PAGE: 1 OF 6 ERP: 1101001113
/
Selection Guide
Part No. Dice Lens Type Iv (mcd) [2] @ 10mA Min. WP132XNT Pure Orange (GaAsP/GaP) Orange Transparent 20 Typ. 50 Viewing Angle [1] 2θ1/2 50°
Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Luminous intensity/ luminous Flux: +/-15%.
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.
Notes: 1.Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V.
Absolute Maximum Ratings at TA=25°C
Parameter Power dissipation DC Forward Current Peak Forward Current [1] Reverse Voltage Operating/Storage Temperature Lead Solder Temperature [2] Lead Solder Temperature [3]
T-1 (3mm) SOLID STATE LAMP
Part Number: WP132XNT Pure Orange
Features
z Low power consumption. z Popular T-1 diameter package. z General purpose leads. z Reliable and rugged. z Long life-solid state reliability. z Available on tape and reel. z RoHS compliant.
/
SPEC NO: DSAF2133 APPROVED: WYNEC
REV NO: V.3 CHECKED: Allen Liu
DATE: FEB/28/2011 DRAWN: J.Yu
PAGE: 5 OF 6 ERP: 1101001113
/
SPEC NO: DSAF2133 APPROVED: WYNEC

REV NO: V.3 CHECKED: Allen Liu
DATE: FEB/28/2011 DRAWN: J.Yu
PAGE: 6 OF 6 ERP: 1101001113
/
分销商库存信息:
KINGBRIGHT WP132XNT