GATE DRIVE CIRCUIT FOR THYRISTOR
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专利名称：GATE DRIVE CIRCUIT FOR THYRISTOR 发明人：NAKATANI MAKOTO
申请号：JP11619388
申请日：19880513
公开号：JPH01286746A
公开日：
19891117
专利内容由知识产权出版社提供
摘要：PURPOSE:To continue supplying power to a load without momentary power interruption by momentarily short-circuiting the gates to the anodes of thyristors connected in anti-parallel of the backup power source system of an AC switch when a control power source common for power supply systems is abnormal. CONSTITUTION:The gate drive circuit of a thyristor is composed of a backup power source 1, an inverter 2 having a battery 5 as a power source to output an AC voltage Vi, an AC switch 3 for switching a power supply path to a load 4 without momentary power interruption, a control power source 6, a controlling circuit 11 of the inverter 2, an oscillator 7, an AC switch controlling circuit 8, a trouble detection circuit 9, etc. Leads (f), (h) connected through resistors Rg1, Rg2 are provided at thyristors TH1, TH2 of the power source 1 side, and photocouplers are connected correspondingly to the contacts of relays. Thus, when a relay is operated by the malfunction of the power source 6, the gates to the anodes of the thyristors TH1, TH2 are short-circuited through resistors Rg1, Rg2.
申请人：FUJI ELECTRIC CO LTD
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