MA3J745中文资料

Detection efficiency
65
0.15 −Hale Waihona Puke 0.05+ 0.1
0.3 − 0
I Features
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse
Ambient temperature Ta (°C)
Reverse voltage VR (V)
Ct VR
3.2 2.8 f = 1 MHz Ta = 25°C
IR T a
104
Terminal capacitance Ct (pF)
103
VR = 30 V 3V 1V
2.0 1.6 1.2 0.8 0.4 0
0.9 ± 0.1
1 : Anode 2 : NC 3 : Cathode EIAJ : SC-70 Flat S- Mini Type Package (3-pin)
Marking Symbol: M2M Internal Connection
1 3 2
I Electrical Characteristics Ta = 25°C
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C
Reverse current IR (µA)
Ta = 125°C
0.8 IF = 30 mA 0.6
103 75°C 102
10
10 mA 0.4
1
10
25°C
10−1
0.2 1 mA
1
10−2
0
0.4
0.8
1.2
1.6
2.0
2.4
0 −40
10−1
0
40
80
120
160
0
5
10
15
20
25
30
Forward voltage VF (V)
元器件交易网
Schottky Barrier Diodes (SBD)
MA3J745
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425
2.1 ± 0.1 1.25 ± 0.1 0.425
+ 0.1
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 30 0.3 1.0 Unit µA V V pF ns
1
元器件交易网
MA3J745
IF V F
103
Schottky Barrier Diodes (SBD)
VF Ta
1.0
IR VR
104 Ta = 125°C
Forward voltage IF (mA)
102
75°C 25°C − 20°C
Forward voltage VF (V)
Reverse current IR (µA)
0 5 10 15 20 25 30
2.4
102
10
1
10−1 −40
0
40
80
120
160
200
Reverse voltage VR (V)
Ambient temperature Ta (°C)
2
tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
1 3 2
• Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short reverse recovery time (trr)