IMPROVED METHOD FOR PRODUCING ASYMMETRIC DOUBLE-G
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专利名称：IMPROVED METHOD FOR PRODUCING
ASYMMETRIC DOUBLE-GATE TRANSISTORS 发明人：VINET, Maud,THOMAS, Olivier,ROZEAU,
Olivier,POIROUX, Thierry
申请号：EP2007064627
申请日：20071228
公开号：WO08/080977P1
公开日：
20080710
专利内容由知识产权出版社提供
摘要：The invention relates to a method for producing a microelectronic device with one or more double-gate transistors, comprising a step in which one or more structures are formed on a substrate, said structures comprising respectively at least a first block (110a, 310a) intended to form a first gate of a double-gate and at least a second block (120a, 320a) intended to form the second gate of the double-gate, said first and second blocks being located on either side of at least one semiconductor zone (115a) and separated from the semiconductor zone respectively by a first gate dielectric zone (109a) and a second gate dielectric zone (119a).
申请人：VINET, Maud,THOMAS, Olivier,ROZEAU, Olivier,POIROUX, Thierry
地址：FR,FR,FR,FR,FR
国籍：FR,FR,FR,FR,FR
代理机构：ILGART, Jean-Christophe
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