IC失效分析理论与测试工具
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DECAP (Decapsulation / Delid )
Decapsulation or delid of ceramic, plastic and BGA packages as well as modules or C.O.B. (Chip On Board). Using fuming uric acid, the will cleanly exposed die is ready for subsequent inspection or test.
OBIRCH(雷射光束誘發阻抗變化)．其主要的原理是利用雷射光 束的掃描來改變其內部線路之（溫度）阻抗改變．當穩定狀況時 供給一IC之固定電壓，相對電流的消耗應該也是固定的．
Confidential
P18
Foxconn Technology Group
OBIRCH (Optical Beam Induced Resistance CHange)
Emission Microscopy
Confidential
P16
Foxconn Technology Group
Emission Microscopy
Confidential
P17
Foxconn Technology Group
OBIRCH (Optical Beam Induced Resistance CHange)
bonding wire integrity. ¾ Printed circuit boards (PCB) barrel plating in vias, registration
and manufacturing induced defects. ¾ Connector analysis for opens, shorts and improper seating ¾ BGA and flip chip solder ball integrity
Oscilloscope
Curve Tracer …
Fail
Application Group, Testing group,
Customer’s support
Non-destructive verification
X-ray, SAT
De-encapsulation
Confidential
Sample preparation for Physical Analysis Cross-section lapping
Confidential
P14
Foxconn Technology Group
Emission Microscopy
Specifications Hamamatsu Emission Microscope system : PHEMOS-75, 1000
Confidential
P15
Foxconn Technology Group
Internal probing Emission microscope
IR-OBRICH
Possible Fault coverage? Pass Electrical measurement
Application issue?
Tester (Ex. Mosaid,Adv)
Miscall?
Function Generator
Confidential
P12
Foxconn Technology Group
Backside Sample Preparation
Confidential
P13
Foxconn Technology Group
Emission Microscopy
對於故障分析而言，微光顯微鏡是一種相當有用且效率極高的分 析工具。微光顯微鏡其高靈敏度的偵測能力可偵測到電流通過元 件時所發射出來的微弱可見光。因此，它可以廣泛的應用於偵測 各種元件缺陷所產生的漏電流可見光。
Confidential
P6
Foxconn Technology Group
SAT (Scanning Acoustic Tomography)
Specifications﹕ SONIX UHR-2000 / UHR-2001 10MHZ ~ 230MHZ 0.252μm
Confidential
P7
V=I*R
Where V = Voltage of Power Supply I = Current R = Resistance of Interconnect of a device
Confidential
P19
Foxconn Technology Group
OBIRCH (Optical Beam Induced Resistance CHange)
當波長為 1300μm的雷射光束照射在Metal上，Metal會因此而改變其溫 度，而該Metal的阻抗也會隨著溫度的變化而變化．
ΔI ≒ - (ΔR/R) * I
Where
ΔR = function of (T) , T: Temperature of Coefficient of Resistance
Application 9矽基材缺陷 (如: Crystal defects, stacking faults, mechanical damage) 9接面漏電 (junction leakage) 9接點穿突 (contact spiking) 9熱載子效應 (飽和區電晶體) (hot electrons, saturated transistors) 9閂鎖現象 (latch-up) 9閘極氧化層漏電流 (oxide current leakage) 9復晶矽鎢絲型橋接 (polysilicon filaments)
SAM內部造影原理為電能經由聚焦轉換鏡產生超聲波觸擊在待測物 品上，將聲波在不同介面上反射或穿透訊號接收後影像處理，再以影像 及訊號加以分析。
SAM可以在不需破壞封裝的情況下探測到脫層、空洞和裂縫，且擁 有類似X-Ray的穿透功能，並可以找出問題發生的位置和提供介面資 料。
Main Applications ﹕ ¾Delamination Cracks (Die, Popcorn, Dielectirc) ¾ Cracks (Die, Popcorn, Dielectirc) ¾ Die Tilt ¾ Voids (Die Attach, Solder, Underfill, Solderball, Dielectric) ¾ Flip Chip analysis
Specifications Fein Focus FXS-100.25 ¾ Die size and feature measurement capability ¾ Magnification in excess of 1000x ¾ Resolution below 2um
Confidential
X-Ray
Real time high-magnification X-ray is being utilized successfully as a non-destructive inspection tool. The evaluations are performed: ¾ IC evaluation for delaminations, popcorn cracks, void and
Corrective Action FA Report
Customer
Confidential
P2
Foxconn Technology Group
Failure Analysis Procedure
Failure Event
History Tracking
Sample/Information Acquire
OBIRCH (Optical Beam Induced Resistance CHange)
Confidential
P21
Foxconn Technology Group
SEM (Scanning Electrical Microscope)
由於電子產業與科技的進步，IC元件線路的微縮，以及奈米科技的 到來，許多的量測已經超出光學檢測的極限(1um)，而必須利用電子顯微 鏡來完成。近年來場發射掃描式電子顯微鏡由於具有試片製作簡單，空 間解析度高，高亮度及景深長的優點，已大量地被用來作尺寸量測及表 面形態之觀察。冷陰極場發射式電子槍源，其更具備最高的電流亮度與 解像度，二次電子影像(SEI)可以在15kv的加速電壓下達到1nm；不過要 注意的是觀察樣品必須為良好的導體，否則會造成電子累積(charging)影 響二次電子的產生；一般都需作樣品前處理，比如表面鍍金或碳膜。
Confidential
P10
Foxconn Technology Group
DECAP (Decapsulation / Delid )
Confidential
P11
Foxconn Technology Group
Backside Sample Preparation
當IC製程微縮到深次微米時也相對的提高了金屬層的層數及密度，雖然 IC因此而縮小體積，卻增加了電性故障分析的困難度。甚至覆晶片封裝 IC的出現，更是傳統電性故障分析者的一大挑戰。因為從IC正面已無法 正確的偵測到故障點位置。 而從晶背分析則是目前已知唯一可行且又 可靠的解決方案﹕ 當從晶背做微光顯微分析時，可正確的定位到發光點而不會因金屬的阻 隔而失誤。 對覆晶片封裝IC而言，晶背分析更是唯一又不破壞IC電性分析的方式。 由此可知，晶背分析是符合現今光進製程IC的有效故障分析方式，而有 效的分析則需靠良好的樣品處理。因此一套高品質的晶背研磨系統是不 可或缺的輔助工具 。
P4
Foxconn Technology Group
X-Ray
Confidential
P5
Foxconn Technology Group
SAT (Scanning Acoustic Tomography)
超音波掃描顯微鏡(SAM)主要使用於封裝內部結構的分析，因為它能提 供IC封裝因水氣或熱能所造成破壞分析，例如裂縫、空洞和脫層。
Foxconn Technology Group
SAT (Scanning Acoustic Tomography)
Confidential
P8
Foxconn Technology Group
SAT (Scanning Acoustic Tomography)
Confidential
P9
Foxconn Technology Group
Package Related Fail Issue
External Visual Inspection
Failure Mode Classification
Internal Visual Inspection
Optical microscope
Defect Location Identification
Planer lapping De-layering
Physical Analysis EDX, SEM, TEM, FIB, AES, SIMS
Failure Mechanism Classification
Corrective Action (Responsible) FA report
P3
Foxconn Technology Group
Sample Return
Contact Window
FA Task Force Quality Eng. R&D Application Eng. Product Eng. Testing Eng. Process Eng.
FA Team Identification of the root cause
Foxconn Technology Group
Methodology of IC Failure Analysis
Confidential
P1
Foxconn Technology Group
Customer Complaint Handling Flow
Failure symptom
Customer Claim
所以當雷射光束掃描的Metal line有異常電流時，所反應出的溫度變化 會與正常電流時的不同，而相對阻抗也會不同，而根據此變化即可繪 出該Metal line上阻抗的變化，也就是電流的變化．如此便可輕易的找 出電流異常的位置及其路徑．
Confidential
P20
Foxconn Technology Group
Decapsulation or delid of ceramic, plastic and BGA packages as well as modules or C.O.B. (Chip On Board). Using fuming uric acid, the will cleanly exposed die is ready for subsequent inspection or test.
OBIRCH(雷射光束誘發阻抗變化)．其主要的原理是利用雷射光 束的掃描來改變其內部線路之（溫度）阻抗改變．當穩定狀況時 供給一IC之固定電壓，相對電流的消耗應該也是固定的．
Confidential
P18
Foxconn Technology Group
OBIRCH (Optical Beam Induced Resistance CHange)
Emission Microscopy
Confidential
P16
Foxconn Technology Group
Emission Microscopy
Confidential
P17
Foxconn Technology Group
OBIRCH (Optical Beam Induced Resistance CHange)
bonding wire integrity. ¾ Printed circuit boards (PCB) barrel plating in vias, registration
and manufacturing induced defects. ¾ Connector analysis for opens, shorts and improper seating ¾ BGA and flip chip solder ball integrity
Oscilloscope
Curve Tracer …
Fail
Application Group, Testing group,
Customer’s support
Non-destructive verification
X-ray, SAT
De-encapsulation
Confidential
Sample preparation for Physical Analysis Cross-section lapping
Confidential
P14
Foxconn Technology Group
Emission Microscopy
Specifications Hamamatsu Emission Microscope system : PHEMOS-75, 1000
Confidential
P15
Foxconn Technology Group
Internal probing Emission microscope
IR-OBRICH
Possible Fault coverage? Pass Electrical measurement
Application issue?
Tester (Ex. Mosaid,Adv)
Miscall?
Function Generator
Confidential
P12
Foxconn Technology Group
Backside Sample Preparation
Confidential
P13
Foxconn Technology Group
Emission Microscopy
對於故障分析而言，微光顯微鏡是一種相當有用且效率極高的分 析工具。微光顯微鏡其高靈敏度的偵測能力可偵測到電流通過元 件時所發射出來的微弱可見光。因此，它可以廣泛的應用於偵測 各種元件缺陷所產生的漏電流可見光。
Confidential
P6
Foxconn Technology Group
SAT (Scanning Acoustic Tomography)
Specifications﹕ SONIX UHR-2000 / UHR-2001 10MHZ ~ 230MHZ 0.252μm
Confidential
P7
V=I*R
Where V = Voltage of Power Supply I = Current R = Resistance of Interconnect of a device
Confidential
P19
Foxconn Technology Group
OBIRCH (Optical Beam Induced Resistance CHange)
當波長為 1300μm的雷射光束照射在Metal上，Metal會因此而改變其溫 度，而該Metal的阻抗也會隨著溫度的變化而變化．
ΔI ≒ - (ΔR/R) * I
Where
ΔR = function of (T) , T: Temperature of Coefficient of Resistance
Application 9矽基材缺陷 (如: Crystal defects, stacking faults, mechanical damage) 9接面漏電 (junction leakage) 9接點穿突 (contact spiking) 9熱載子效應 (飽和區電晶體) (hot electrons, saturated transistors) 9閂鎖現象 (latch-up) 9閘極氧化層漏電流 (oxide current leakage) 9復晶矽鎢絲型橋接 (polysilicon filaments)
SAM內部造影原理為電能經由聚焦轉換鏡產生超聲波觸擊在待測物 品上，將聲波在不同介面上反射或穿透訊號接收後影像處理，再以影像 及訊號加以分析。
SAM可以在不需破壞封裝的情況下探測到脫層、空洞和裂縫，且擁 有類似X-Ray的穿透功能，並可以找出問題發生的位置和提供介面資 料。
Main Applications ﹕ ¾Delamination Cracks (Die, Popcorn, Dielectirc) ¾ Cracks (Die, Popcorn, Dielectirc) ¾ Die Tilt ¾ Voids (Die Attach, Solder, Underfill, Solderball, Dielectric) ¾ Flip Chip analysis
Specifications Fein Focus FXS-100.25 ¾ Die size and feature measurement capability ¾ Magnification in excess of 1000x ¾ Resolution below 2um
Confidential
X-Ray
Real time high-magnification X-ray is being utilized successfully as a non-destructive inspection tool. The evaluations are performed: ¾ IC evaluation for delaminations, popcorn cracks, void and
Corrective Action FA Report
Customer
Confidential
P2
Foxconn Technology Group
Failure Analysis Procedure
Failure Event
History Tracking
Sample/Information Acquire
OBIRCH (Optical Beam Induced Resistance CHange)
Confidential
P21
Foxconn Technology Group
SEM (Scanning Electrical Microscope)
由於電子產業與科技的進步，IC元件線路的微縮，以及奈米科技的 到來，許多的量測已經超出光學檢測的極限(1um)，而必須利用電子顯微 鏡來完成。近年來場發射掃描式電子顯微鏡由於具有試片製作簡單，空 間解析度高，高亮度及景深長的優點，已大量地被用來作尺寸量測及表 面形態之觀察。冷陰極場發射式電子槍源，其更具備最高的電流亮度與 解像度，二次電子影像(SEI)可以在15kv的加速電壓下達到1nm；不過要 注意的是觀察樣品必須為良好的導體，否則會造成電子累積(charging)影 響二次電子的產生；一般都需作樣品前處理，比如表面鍍金或碳膜。
Confidential
P10
Foxconn Technology Group
DECAP (Decapsulation / Delid )
Confidential
P11
Foxconn Technology Group
Backside Sample Preparation
當IC製程微縮到深次微米時也相對的提高了金屬層的層數及密度，雖然 IC因此而縮小體積，卻增加了電性故障分析的困難度。甚至覆晶片封裝 IC的出現，更是傳統電性故障分析者的一大挑戰。因為從IC正面已無法 正確的偵測到故障點位置。 而從晶背分析則是目前已知唯一可行且又 可靠的解決方案﹕ 當從晶背做微光顯微分析時，可正確的定位到發光點而不會因金屬的阻 隔而失誤。 對覆晶片封裝IC而言，晶背分析更是唯一又不破壞IC電性分析的方式。 由此可知，晶背分析是符合現今光進製程IC的有效故障分析方式，而有 效的分析則需靠良好的樣品處理。因此一套高品質的晶背研磨系統是不 可或缺的輔助工具 。
P4
Foxconn Technology Group
X-Ray
Confidential
P5
Foxconn Technology Group
SAT (Scanning Acoustic Tomography)
超音波掃描顯微鏡(SAM)主要使用於封裝內部結構的分析，因為它能提 供IC封裝因水氣或熱能所造成破壞分析，例如裂縫、空洞和脫層。
Foxconn Technology Group
SAT (Scanning Acoustic Tomography)
Confidential
P8
Foxconn Technology Group
SAT (Scanning Acoustic Tomography)
Confidential
P9
Foxconn Technology Group
Package Related Fail Issue
External Visual Inspection
Failure Mode Classification
Internal Visual Inspection
Optical microscope
Defect Location Identification
Planer lapping De-layering
Physical Analysis EDX, SEM, TEM, FIB, AES, SIMS
Failure Mechanism Classification
Corrective Action (Responsible) FA report
P3
Foxconn Technology Group
Sample Return
Contact Window
FA Task Force Quality Eng. R&D Application Eng. Product Eng. Testing Eng. Process Eng.
FA Team Identification of the root cause
Foxconn Technology Group
Methodology of IC Failure Analysis
Confidential
P1
Foxconn Technology Group
Customer Complaint Handling Flow
Failure symptom
Customer Claim
所以當雷射光束掃描的Metal line有異常電流時，所反應出的溫度變化 會與正常電流時的不同，而相對阻抗也會不同，而根據此變化即可繪 出該Metal line上阻抗的變化，也就是電流的變化．如此便可輕易的找 出電流異常的位置及其路徑．
Confidential
P20
Foxconn Technology Group