杰尼奥 EE-SJ3 系列光学传感器（透光型）说明书

110
EE-SJ3 Series Photomicrosensor (Transmissive)
■Dimensions
Note:All units are in millimeters unless otherwise indicated.
■Features
•High-resolution model with a 0.2-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available.
■Absolute Maximum Ratings (Ta =25°C)
Note:1.Refer to the temperature rating chart if the ambient temper-ature exceeds 25°C.
2.The pulse width is 10 μs maximum with a frequency of 100Hz.
plete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name A Anode K Cathode C Collector E Emitter
Dimensions Tolerance 3 mm max. ±0.33 < mm ≤ 6 ±0.3756 < mm ≤ 10 ±0.4510 < mm ≤ 18 ±0.5518 < mm ≤ 30
±0.65
Model Aperture (a x b)
EE-SJ3-C 2.1 x 1.0EE-SJ3-D 2.1 x 0.2EE-SJ3-G
0.5 x 2.1
Four, 0.5
Four, 0.25
Center mark
Cross section BB
Cross section AA
7.2±0.2
2.54±0.27.6±0.3
6
0.2
10.2
6.2
0.3
Unless otherwise specified, the tolerances are as shown below.
Item
Symbol Rated value Emitter
Forward current I F 50 mA (see note 1)Pulse forward current
I FP
1 A (see note 2)Reverse voltage V R
4 V Detector
Collector–Emit-ter voltage
V CEO 30 V Emitter–Collec-tor voltage V ECO ---Collector cur-rent
I C
20 mA
Collector dissi-pation
P C 100 mW (see note 1)
Ambient tem-perature
Operating Topr –25°C to 85°C Storage
Tstg –30°C to 100°C Soldering temperature
Tsol
260°C
(see note 3)
Item
Symbol
Value Condition
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Emitter
Forward voltage V F 1.2 V typ., 1.5 V max.I F = 30 mA Reverse current I R 0.01 μA typ., 10 μA max.V R = 4 V Peak emission wave-length
λP 940 nm typ.I F = 20 mA
Detector
Light current I L 1 to 28 mA typ.0.1 mA min.
0.5 to 14 mA
I F = 20 mA, V CE = 10 V Dark current I D 2 nA typ., 200 nA max.
V CE = 10 V, 0l x Leakage current I LEAK ------Collector–Emitter satu-rated voltage
V CE (sat)
0.1 V typ.,
0.4 V max.---0.1 V typ., 0.4 V max.
I F = 20 mA,I L = 0.1 mA Peak spectral sensitivity wavelength
λP 850 nm typ.V CE = 10 V Rising time tr 4 μs typ.V CC = 5 V,R L = 100 Ω,I L = 5 mA
Falling time
tf
4 μs typ.
Be sure to read Precautions on page 25.
EE-SJ3 Series Photomicrosensor (Transmissive) 111
■Engineering Data
Dissipation Temperature Rating
Voltage Characteristics (Typical)
Light Current vs. Collector −Emitter Voltage Characteristics (EE-SJ3-G)
Dark Current vs. Ambient Temperature Characteristics (Typical)
Sensing Position Characteristics (EE-SJ3-D)
Sensing Position Characteristics (EE-SJ3-G)
Sensing Position Characteristics (EE-SJ3-C)
Distance d (mm)
Input Output
Input
Output
90 %10 %
Center of optical axis
Center of optical axis
d
0−
+
Response Time Measurement Circuit
Distance d (mm)
Distance d (mm)
Center of optical axis
Ambient temperature T a (°C)
C o l l e c t o r d i s s i p a t i o n P C (m W )
Forward voltage V F (V)
F o r w a r d c u r r e n t I F (m A )
F o r w a r d c u r r e n t I F (m A )
Forward current I F (mA)
L i g h t c u r r e n t I L (m A )
Collector −Emitter voltage V CE (V)
L i g h t c u r r e n t I L (m A )
Ambient temperature Ta (°C)Load resistance R L (k Ω)
T a = −30°C T a = 25°C T a = 70°C
T a = 25°C V CE = 10 V
I F = 40 mA I F = 30 mA I F = 20 mA I F = 10 mA
T a = 25°C
V CE = 10 V 0 l x
I F = 20 mA V CE = 5 V
I F = 20 mA V CE = 10 V T a = 25°C
V CC = 5 V T a = 25°C
R e s p o n s e t i m e t r , t f (μs )
R e l a t i v e l i g h t c u r r e n t I L (%)
D a r k c u r r e n t I D (n A )
I F = 50 mA Ambient temperature Ta (°C)
I F P C
R e l a t i v e l i g h t c u r r e n t I L (%)
I F = 20 mA V CE = 10 V T a = 25°C
R e l a t i v e l i g h t c u r r e n t I L (%)
I F = 20 mA V CE = 10 V T a = 25°C
R e l a t i v e l i g h t c u r r e n t I L (%)
Relative Light Current vs. Ambi-ent Temperature Characteristics (Typical)
Response Time vs. Load Resist-ance Characteristics (Typical)。