5SHX03D6004中文资料

V DRM=5500V I TGQM=280A I TSM= 1.8kA V T0= 1.95V r T=7.2mΩV DClink=3300V Reverse Conducting Integrated Gate-Commutated Thyristor5SHX 03D6004Doc. No. 5SYA1225-03 Jan. 02•Direct fiber optic control•Fast response (t don < 3 µs, t doff < 6 µs) •Precise timing (∆t doff < 800 ns) •Patented free floating silicon technology •Optimized low On-state and switching losses •Very high EMI immunity•Cosmic radiation withstand ratingBlockingV DRM Repetitive peak off-state voltage5500V V GR≥ 2VI DRM Repetitive peak off-state current≤20mA V D= V DRM V GR≥ 2VV DClink Permanent DC voltage for 100FIT failure rate3300V0 ≤ T j≤ 115 °C. Ambient cosmicradiation at sea level in open air.Mechanical data (see Fig. 9)min.10kNF m Mounting forcemax.14kND p Pole-piece diameter34mm±0.1mmH Housing thickness26mm±0.5mmm Weight IGCT0.55kgD s Surface creepage distance≥33mmD a Air strike distance≥13mml Length IGCT202.5mm+0/-0.5mmh Height IGCT46.5mm±1.0mmw Width IGCT200mm+0/-0.5mmABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.I TAVM Max. average on-state current 110A Half sine wave, T C = 85 °CI TRMS Max. RMS on-state current 170A 1.8kA t p =10ms I TSMMax. peak non-repetitive surge current 3.6kA t p =1ms T j = 115 °C After surge:V D = V R = 0V16.9x103A 2s t p =10ms I 2t Limiting load integral 6.6x103A 2s t p =1ms V T On-state voltage ≤3.95V I T =280A V T0Threshold voltage 1.95V r TSlope resistance7.2m ΩI T=100 - 500AT j = 115 °C Turn-on switchingf =500Hz T j =115°C di/dt crit Max. rate of rise of on-state current90A/µs I T =280A V D =3900V t don Turn-on delay time ≤3µs V D=3300V T j =115°C t r Rise time ≤1µs I T =280A di/dt =75A/µs t on (min)Min, on-time10µs R S=5.2ΩL i=44.5µH E onTurn-on energy per pulse≤0.15JC CL =0.5µFL CL =1µHTurn-off switching (see Fig. 2, 3)V DM ≤V DRM T j=115°C I TGQM Max. controllable turn-off current 280A V D =3300V L CL ≤1µH t doff Turn-off delay time ≤6µs V D =3300V V DM ≤V DRMt f Fall time ≤1µs T j=115°C R s = 5.2Ωt off (min)Min. off-time10µs I TGQ =I TGQML i=44.5µH E offTurn-off energy per pulse≤ 1.5JC CL =0.5µF L CL ≤1µHI FAVM Max. average on-state current 65A I FRMS Max. RMS on-state current 100A Half sine wave, T C = 85 °C 1.9kA t p =10ms T j =115 °CI FSM Max. peak non-repetitive surge current4.4kAt p =1ms After surge:18.2×103A 2s t p =10ms V F = V R = 0V I 2t Limiting load integral 9.6×103A 2st p =1ms V F On-state voltage ≤6.5VI F =280A V F0Threshold voltage 3.52V T j =115 °Cr FSlope resistance10.7m ΩI F=100 - 500ATurn-off switching (see Fig. 5, 6)I F=280A T j =115°Cdi/dt crit Max. rate of rise of on-state current90A/µs V CL =3900V I rr Reverse recovery current ≤170A V CL =3300V I F =280A E rrTurn-off energy≤0.8Jdi/dt =75A/µs T j =115°C R s = 5.2ΩL i =44.5µH C CL =0.5µFL CL =1µHGate UnitPower supply (see Fig. 9 to 11)V GDC Gate Unit voltage20 ±0.5V DC Without galvanic isolation to power circuit.P GinGate Unit power consumption≤11Wf S = 500 Hz, I TGQ AV = 115 A, δ = 0.9X1Gate Unit power connector WAGO, Part Number 231-532/001-000 Note 1Optical control input/output (see Fig. 9 to 11)P on CS Optical input power >-20dBm P off CS Optical noise power <-45dBm Valid for 1mm plastic optical fibre (POF)t GLITCH Pulse width threshold ≤450nsMax. pulse width without responseCSReceiver for command signalAgilent, Type HFBR-2528 Note 2Note 1: WAGO, Note 2: Agilent Technologies, ThermalT jop Operating junction temperature range0…115°CT stg Storage temperature range-40…60°CT amb Ambient operational temperature range0…60°CThermal resistance junction to caseR thJC GCT Diode not dissipating≤70K/kW Double side cooled R thJC Diode GCT not dissipating≤90K/kWThermal resistance case to heatsinkR thCH GCT Diode not dissipating≤16K/kW Double side cooled R thCH Diode GCT not dissipating≤16K/kWGCT PartFig. 1GCT on-state characteristics.Fig. 2GCT turn-off energy per pulse vs.turn-off current.Fig. 3Max. repetitive GCT turn-off current.Diode PartFig. 4Diode on-state characteristics.Fig. 5Diode turn-off energy per pulse vs.turn-off current.Fig. 6Diode reverse recovery current vs.turn-off current.Fig. 7Max. repetitive diode forward current.Fig. 8Gate Unit power consumption.Fig. 9Device Outline Drawing.Fig. 10Block diagram.ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.ABB Switzerland LtdDoc. No. 5SYA1225-03 Jan. 02Semiconductors Fabrikstrasse 3CH-5600 Lenzburg, SwitzerlandTelephone +41 (0)58 586 1419Fax +41 (0)58 586 1306Email abbsem@Fig. 11General current and voltage waveforms with IGCT-specific symbols.Fig. 12Test circuit.。