BFR280W中文资料

fT = 7.5 GHz F = 1.5 dB at 900 MHz
2 1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BFR280W
REs
Maximum Ratings
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V
f = 1.8 GHz
5
7.5
- GHz
- 0.27 0.45 pF
- 0.18 -
- 0.22 -
dB
-
1.5
-
-
2
-
Power gain, maximum stable 1)
Gms
IC = 3 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
f = 1.8 GHz
1
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10
0
10
-7
10 -6
10 -5
10 -4
10 -3Hale Waihona Puke 10 -2s 10 0
tp
5
Jun-27-2001
元器件交易网
BFR280W
Collector-base capacitance Ccb = f (VCB) f = 1MHz
1
Jun-27-2001
元器件交易网
BFR280W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
deg
VJC = 1.1943 V
MJC = 0.30017 -
TR = 2.3693 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC = 0.96275 -
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST)
9
10V
8
8V
5V 7
3V
6 2V
5
4 1V
3
0.7V
2
1
0
0
2
4
6
8 mA 11
IC
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
14
dB
10V
3V
2V 10
G
G
14
8
1V
1V
12
6
0.7V
0.7V
10
4
8
2
6
0
2
4
6
8 mA 11
IC
6
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation TS = 115 °C 1) Junction temperature
4
Jun-27-2001
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BFR280W
Total power dissipation Ptot = f (TS)
Ptot
100 mW
80 70 60 50 40 30 20 10
00 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load RthJS = f (tp)
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
fT
IC = 6 mA, VCE = 5 V, f = 500 MHz
Collector-base capacitance
20
IC=3mA
dB
S2 1
16
14
12
10
8
6
10V
4
1V
0.7V 2
0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
Jun-27-2001
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: /products/discrete/index.htm
20 dBm
12
8V 5V 3V
2V
IP 3
8
1V 4
0
-4
-8
-12
0
2
4
6
Power Gain |S21|2= f(f)
8 mA 11
IC
G
VCE = Parameter
30
IC=3mA
dB
20
15
10 10V
0.7V
5
1V
0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
VCE = Parameter
V(BR)CEO 8
-
-V
ICES
-
- 100 µA
ICBO
-
- 100 nA
IEBO
-
-
1 µA
hFE
30 100 200 -
2
Jun-27-2001
元器件交易网
BFR280W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
- 17.5 - 13.5 -
Transducer gain
IC = 3 mA, VCE = 5 V, ZS = ZL = 50 ,
f = 900 MHz IC = 3 mA, VCE = 5 V
|S21e|2
-
14
-
-
9
-
1Gms = |S21 / S12|
3
Jun-27-2001
元器件交易网
0
0
2
4
6
8 mA 11
IC
Jun-27-2001
元器件交易网
BFR280W
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
18
IC=3mA
dB
0.9GHz
14
0.9GHz
1.8GHz 12
10 3
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 1
Ptotmax / PtotDC
RthJS
K/W 10 2
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0
0.005
0.01
0.02
-
0.05
0.1
0.2
0.5
10
Ccb
VCB = 5 V, f = 1 MHz
Collector-emitter capacitance
Cce
VCE = 5 V, f = 1 MHz
Emitter-base capacitance
Ceb
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 1.5 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz
Ambient temperature
Storage temperature
Pin Configuration
1=B
2=E
3=C
Package SOT323
Symbol VCEO VCES VCBO VEBO IC IB Ptot
Tj TA Tstg
Value
Unit
8
V