IXGH15N120C;中文规格书,Datasheet资料

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ME15N10规格书最新版

Parameter Symbol Rating UnitDrain-Source Voltage V DSS 100 VGate-Source Voltage V GSS ±20 V T C =25℃ 14.7 Continuous Drain Current(Tj=150℃) T C =70℃I D13.6APulsed Drain Current I DM 59 A T C =25℃ 34.7 Maximum Power Dissipation T C =70℃ P D 22.2 W Operating Junction TemperatureT J-55 to 150℃Thermal Resistance-Junction to Case *R θJC 3.6℃/W GENERAL DESCRIPTIONThe ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.FEATURES● R DS(ON)≦100m Ω@VGS=10V● Super high density cell design for extremely low R DS(ON) ● Exceptional on-resistance and maximum DC current capabilityAPPLICATIONS● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverterPIN CONFIGURATIONAbsolute Maximum Ratings (T A =25℃ Unless Otherwise Noted)* The device mounted on 1in 2 FR4 board with 2 oz coppere Ordering Information : ME15N10 (Pb-free)ME15N10-G (Green product-Halogen free)(TO-252-3L) Top ViewSymbolParameterLimitMin Typ Max UnitSTATICBV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250μA 100VV GS(th) Gate Threshold Voltage V DS =V GS , I D =250μA 1 3 VI GSS Gate Leakage CurrentV DS =0V, V GS =±20V ±100nA I DSS Zero Gate Voltage Drain Current V DS =80V, V GS =0V 1 μA R DS(ON) Drain-Source On-Resistance aV GS =10V, I D = 8A 80 100 m Ω V SD Diode Forward VoltageI S =8A, V GS =0V0.91.2VDYNAMIC Qg Total Gate Charge V DS =80V, V GS =10V, I D =10A24 QgTotal Gate Charge13Qgs Gate-Source Charge 4.6 Qgd Gate-Drain Charge V DS =80V, V GS =4.5V, I D =10A 7.6 nCC iss Input Capacitance 890 C oss Output Capacitance58 C rss Reverse Transfer Capacitance V DS =15V, V GS =0V, f=1MHz23 pF Rg Gate-Resistance V DS =0V, V GS =0V, f=1MHz0.9 Ω t d(on) Turn-On Delay Time 14 tr Turn-On Rise Time 33 t d(off) Turn-Off Delay Time 39t f Turn-Off Fall TimeV DS =50V, R L =5Ω, V GEN =10V, R G =1Ω5nsNotes: a. Pulse test: pulse width ≦ 300us, duty cycle ≦ 2%,Guaranteed by design, not subject to production testing. b. Matsuki reserves the right to improve product design, functions and reliability without notice.Electrical Characteristics (T A =25℃ Unless Otherwise Specified)ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFETTypical Characteristics (T J =25℃ Noted)ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFETNoted)Typical Characteristics (T J =25℃GENERAL DESCRIPTIONThe ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. FEATURES●R DS(ON)≦100mΩ@VGS=10V●Super high density cell design for extremely low R DS ●Exceptional on-resistance and maximum DC currencapabilityAPPLICATIONS●Power Management in Note book● DC/DC Converter● Load Switch●LCD Display inverter。

IXER60N120中文资料

元器件交易网
Advanced Technical Information
NPT3 IGBT
in ISOPLUS 247TM
IXER 60N120 IC25
VCES VCE(sat) typ.
C G
= 95 A = 1200 V = 2.1 V
ISOPLUS 247TM E153432
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
© 2002 IXYS All rights reserved
2-2
• single switches and with complementary free wheeling diodes • choppers • phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH
IC = 60 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V

美国电子公司 IXYS 产品说明书：IXYS 60N100C 电源电阻

Dimensions: [mm]Scale - 1:1Marking7843643201078436432010784364320107843643201078436432010T e m p e r a t u r eT pT L78436432010Cautions and Warnings:The following conditions apply to all goods within the product series of WE-HCFA ofWürth Elektronik eiSos GmbH & Co. KG:General:•This electronic component is designed and manufactured for use in general electronic equipment.•Würth Elektronik must be asked for written approval (following the PPAP procedure) before incorporating the components into any equipment in fields such as military, aerospace, aviation, nuclear control, submarine, transportation (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc. where higher safety and reliability are especially required and/or if there is the possibility of direct damage or human injury.•Electronic components that will be used in safety-critical or high-reliability applications, should be pre-evaluated by the customer. •The component is designed and manufactured to be used within the datasheet specified values. If the usage and operation conditions specified in the datasheet are not met, the wire insulation may be damaged or dissolved.•Do not drop or impact the components, the component may be damaged.•Würth Elektronik products are qualified according to international standards, which are listed in each product reliability report. Würth Elektronik does not warrant any customer qualified product characteristics beyond Würth Elektroniks’ specifications, for its validity and sustainability over time.•The responsibility for the applicability of the customer specific products and use in a particular customer design is always within the authority of the customer. All technical specifications for standard products also apply to customer specific products.Product specific:Soldering:•The solder profile must comply with the technical product specifications. All other profiles will void the warranty.•All other soldering methods are at the customers’ own risk.•Strong forces which may affect the coplanarity of the components’ electrical connection with the PCB (i.e. pins), can damage the part, resulting in avoid of the warranty.Cleaning and Washing:•Washing agents used during the production to clean the customer application might damage or change the characteristics of the wire insulation, marking or plating. Washing agents may have a negative effect on the long-term functionality of the product.•Using a brush during the cleaning process may break the wire due to its small diameter. Therefore, we do not recommend using a brush during the PCB cleaning process.Potting:•If the product is potted in the customer application, the potting material might shrink or expand during and after hardening. Shrinking could lead to an incomplete seal, allowing contaminants into the core. Expansion could damage the components. We recommend a manual inspection after potting to avoid these effects.Storage Conditions:• A storage of Würth Elektronik products for longer than 12 months is not recommended. Within other effects, the terminals may suffer degradation, resulting in bad solderability. Therefore, all products shall be used within the period of 12 months based on the day of shipment.•Do not expose the components to direct sunlight.•The storage conditions in the original packaging are defined according to DIN EN 61760-2.•The storage conditions stated in the original packaging apply to the storage time and not to the transportation time of the components. Packaging:•The packaging specifications apply only to purchase orders comprising whole packaging units. If the ordered quantity exceeds or is lower than the specified packaging unit, packaging in accordance with the packaging specifications cannot be ensured. Handling:•Violation of the technical product specifications such as exceeding the nominal rated current will void the warranty.•Applying currents with audio-frequency signals may result in audible noise due to the magnetostrictive material properties.•The temperature rise of the component must be taken into consideration. The operating temperature is comprised of ambient temperature and temperature rise of the component.The operating temperature of the component shall not exceed the maximum temperature specified.These cautions and warnings comply with the state of the scientific and technical knowledge and are believed to be accurate and reliable.However, no responsibility is assumed for inaccuracies or incompleteness.Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODPaC002.0012020-03-24DIN ISO 2768-1mDESCRIPTIONWE-HCFA High Current Flat WireInductor ORDER CODE78436432010SIZE/TYPE BUSINESS UNIT STATUS PAGEImportant NotesThe following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the areas, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibility for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime cannot be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component. Therefore, customer is cautioned to verify that data sheets are current before placing orders. The current data sheets can be downloaded at .3. Best Care and AttentionAny product-specific notes, cautions and warnings must be strictly observed. Any disregard will result in the loss of warranty.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve specific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Section 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a standard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability expectancy before or when the product for application design-in disposal is considered. The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG. Würth Elektronik eiSos GmbH & Co. KG does not warrant or represent that any license, either expressed or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, application, or process in which Würth Elektronik eiSos GmbH & Co. KG components or services are used.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODPaC002.0012020-03-24DIN ISO 2768-1mDESCRIPTIONWE-HCFA High Current Flat WireInductor ORDER CODE78436432010SIZE/TYPE BUSINESS UNIT STATUS PAGE。

IHW15N120R2H15R1202pdf

min.
-
Value typ.
342 90 1.3 1.3
Unit max.
-
2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
-
Reverse transfer capacitance
Crss
f=1MHz
-
Gate charge
QGate
VCC=960V, IC=15A
-
VGE=15V
Internal emitter inductance
LE
-
measured 5mm (0.197 in.) from case
1530 49 39 133
IHW15N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
13
- pF - nC
- nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol

kw15n120中文资料

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode• 40% lower E off compared to previous generation •Short circuit withstand time – 10 µs • Designed for:- Motor controls - Inverter - SMPS• NPT-Technology offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour - parallel switching capabilityType V CE I C E off T j Package Ordering Code SKW15N1201200V15A1.5mJ150°CTO-247ACQ67040-S4281Maximum Ratings ParameterSymbol Value Unit Collector-emitter voltage V C E 1200V DC collector current T C = 25°C T C = 100°CI C3015Pulsed collector current, t p limited by T jmax I C p u l s 52Turn off safe operating area V CE ≤ 1200V, T j ≤ 150°C -52Diode forward current T C = 25°C T C = 100°CI F3215Diode pulsed current, t p limited by T jmax I F p u l s 50AGate-emitter voltage V G E ±20V Short circuit withstand time 1)V GE = 15V, 100V ≤ V CC ≤1200V, T j ≤ 150°Ct S C 10µs Power dissipation T C = 25°CP t o t 198W Operating junction and storage temperatureT j , T s t g -55...+150Soldering temperature, 1.6mm (0.063 in.) from case for 10s-260°CThermal Resistance Parameter Symbol Conditions Max. ValueUnit CharacteristicIGBT thermal resistance,junction – caseR t h J C 0.63Diode thermal resistance,junction – case R t h J C D 1.5Thermal resistance,junction – ambientR t h J ATO-247AC 40K/WElectrical Characteristic, at T j = 25 °C, unless otherwise specified ValueParameterSymbol Conditionsmin.typ.max.UnitStatic CharacteristicCollector-emitter breakdown voltage V (B R )C E S V G E =0V,I C =1000µA 1200--Collector-emitter saturation voltageV C E (s a t )V G E = 15V, I C =15A T j =25°C T j =150°C2.5-3.13.7 3.64.3Diode forward voltageV FV G E =0V, I F =15A T j =25°C T j =150°C- 2.01.752.5Gate-emitter threshold voltage V G E (t h )I C =600µA,V C E =V G E 345VZero gate voltage collector currentI C E SV CE =1200V,V GE =0V T j =25°C T j =150°C----200800µAGate-emitter leakage current I G E S V CE =1200V,V GE =0V --100nA Transconductance g f s V C E =20V, I C =15A 11-S Dynamic Characteristic Input capacitance C i s s -12901550Output capacitanceC o s s -155185Reverse transfer capacitance C r s s V C E =25V,V G E =0V,f =1MHz-90110pFGate chargeQ G a t e V C C =960V, I C =15A V G E =15V -130175nC Internal emitter inductancemeasured 5mm (0.197 in.) from case L E TO-247AC-13-nH Short circuit collector current1)I C (S C )V G E =15V,t S C ≤10µs 100V ≤V C C ≤1200V,T j ≤ 150°C-145-ASwitching Characteristic, Inductive Load, at T j =25 °C ValueParameterSymbolConditionsmin.typ.max.UnitIGBT Characteristic Turn-on delay time t d (o n )-1824Rise timet r -2330Turn-off delay time t d (o f f )-580750Fall time t f -2229nsTurn-on energy E o n - 1.1 1.5Turn-off energy E o f f -0.8 1.1Total switching energyE t sT j =25°C,V C C =800V,I C =15A,V G E =15V/0V,R G =33Ω,Energy losses include “tail” and diode reverse recovery.- 1.92.6mJ Anti-Parallel Diode Characteristic Diode reverse recovery timet r r t S t F---65 nsDiode reverse recovery charge Q r r -0.5µC Diode peak reverse recovery current I r r m -15A Diode peak rate of fall of reverse recovery current during t Fdi r r /dtT j =25°C,V R =800V, I F =15A,di F /dt =650A/µs-500A/µs Switching Characteristic, Inductive Load, at T j =150 °C ValueParameterSymbolConditionsmin.typ.max.UnitIGBT Characteristic Turn-on delay time t d (o n )-3846Rise timet r -3036Turn-off delay time t d (o f f )-652780Fall time t f -3137nsTurn-on energy E o n - 1.9 2.3Turn-off energy E o f f - 1.5 2.0Total switching energyE t sT j =150°C V C C =800V,I C =15A,V G E =15V/0V,R G =33ΩEnergy losses include “tail” and diode reverse recovery.- 3.44.3mJ Anti-Parallel Diode Characteristic Diode reverse recovery timet r r t S t F---200 nsDiode reverse recovery charge Q r r - 2.0µC Diode peak reverse recovery current I r r m -23A Diode peak rate of fall of reverse recovery current during t Fdi r r /dtT j =150°CV R =800V, I F =15A,di F /dt =650A/µs-140A/µsI C , C O L L E C T O R C U R R E N T10Hz100Hz 1kHz 10kHz 100kHz 0A 10A 20A 30A 40A 50A 60A 70AI C , C O L L E C T O R C U R R E N T1V 10V 100V 1000V0.1A1A10A100Af , SWITCHING FREQUENCYV CE , COLLECTOR -EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency(T j ≤ 150°C, D = 0.5, V CE = 800V,V GE = +15V/0V, R G = 33Ω)Figure 2. Safe operating area (D = 0, T C = 25°C, T j ≤ 150°C)P t o t , P O W E R D I S S I P A T I O N25°C50°C 75°C 100°C 125°C 0W 25W 50W 75W 100W 125W 150W 175W 200WI C , C O L L E C T O R C U R R E N T25°C50°C 75°C 100°C 125°C0A5A 10A 15A 20A 25A 30A35AT C , CASE TEMPERATURET C , CASE TEMPERATUREFigure 3. Power dissipation as a function of case temperature (T j ≤ 150°C)Figure 4. Collector current as a function of case temperature(V GE ≤ 15V, T j ≤ 150°C)I C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V 6V 7V0A 10A20A30A40A 50AI C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V 6V 7V0A 10A20A30A40A50AV CE , COLLECTOR -EMITTER VOLTAGEV CE , COLLECTOR -EMITTER VOLTAGEFigure 5. Typical output characteristics (T j = 25°C)Figure 6. Typical output characteristics (T j = 150°C)I C , C O L L E C T O R C U R R E N T3V5V 7V 9V 11V0A 10A20A30A40A50AV C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E-50°C0°C 50°C 100°C 150°C0V1V2V3V4V5V6VV GE , GATE -EMITTER VOLTAGET j , JUNCTION TEMPERATUREFigure 7. Typical transfer characteristics (V CE = 20V)Figure 8. Typical collector-emittersaturation voltage as a function of junction temperature (V GE = 15V)t , S W I T C H I N G T I M E S0A10A20A30A40A10ns100ns1000nst , S W I T C H I N G T I M E S0Ω25Ω50Ω10ns100ns1000nsI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 9. Typical switching times as a function of collector current(inductive load, T j = 150°C, V CE = 8600V,V GE = +15V/0V, R G = 33Ω)Figure 10. Typical switching times as a function of gate resistor(inductive load, T j = 150°C, V CE = 800V,V GE = +15V/0V, I C = 15A)t , S W I T C H I N G T I M E S-50°C0°C 50°C 100°C 150°C10ns100ns1000nsV G E (t h ), G A T E -E M I T T E R T H R E S H O L D V O L T A G E-50°C0°C 50°C 100°C150°C0V1V2V3V4V5V6VT j , JUNCTION TEMPERATURET j , JUNCTION TEMPERATUREFigure 11. Typical switching times as a function of junction temperature(inductive load, V CE = 800V, V GE = +15V/0V,I C = 15A, R G = 33Ω)Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.3mA)E , S W I T C H I N G E N E R G Y L O S S E S0A10A 20A 30A 40A 50A0mJ 2mJ 4mJ 6mJ 8mJ10mJ 12mJ14mJE , SW I T C H I N G E N E R G Y L O S S E S0Ω25Ω50Ω75Ω0mJ 1mJ2mJ3mJ4mJ5mJI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 13. Typical switching energy losses as a function of collector current(inductive load, T j = 150°C, V CE = 800V,V GE = +15V/0V, R G = 33Ω)Figure 14. Typical switching energy losses as a function of gate resistor(inductive load, T j = 150°C, V CE = 800V,V GE = +15V/0V, I C = 15A)E , SW I T C H I N G E N E R G Y L O S S E S-50°C0°C 50°C 100°C 150°C0mJ 1mJ2mJ3mJ4mJZ t h J C , T R A N S I E N T T H E R M A L I M P E D A N C E1µs10µs100µs1ms 10ms 100ms 1s10-3K/W10-2K/W 10-1K/WT j , JUNCTION TEMPERATUREt p , PULSE WIDTHFigure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 800V, V GE = +15V/0V,I C = 15A, R G = 33Ω)Figure 16. IGBT transient thermalimpedance as a function of pulse width (D = t p / T )V G E , G A T E -E M I T T E R V O L T A G E0nC50nC100nC150nC0V 5V10V15V20VC , C A P A C I T A N C E0V10V20V30V100pF1nFQ GE , GATE CHARGEV CE , COLLECTOR -EMITTER VOLTAGE Figure 17. Typical gate charge (I C = 15A)Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE = 0V, f = 1MHz)t s c , S H O R T C I R C U I T W I T H S T A N D T I M E10V 11V12V13V14V15V0µs10µs20µs30µsI C (s c ), S H O R T C I R C U I T C O L L E C T O R C U R R E N T10V12V 14V 16V18V 20V0A 50A100A150A200A250A300AV GE , GATE -EMITTER VOLTAGEV GE , GATE -EMITTER VOLTAGEFigure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE = 1200V, start at T j = 25°C)Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V ≤V CE ≤1200V, T C = 25°C, T j ≤ 150°C)t r r , R E V E R S E R E C O V E R Y T I M E200A/µs400A/µs 600A/µs 800A/µs 1000A/µs0ns50ns 100ns 150ns 200ns 250ns 300ns 350ns400nsQ r r , R E V E R S E R E C O V E R Y C H A R G E200A/µs400A/µs 600A/µs 800A/µs 1000A/µs0.0µC0.5µC1.0µC1.5µC2.0µC2.5µCdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 21. Typical reverse recovery time as a function of diode current slope (V R = 800V, T j = 150°C)Figure 22. Typical reverse recovery charge as a function of diode current slope (V R = 800V, T j = 150°C)I r r , R E V E R S E R E C O V E R Y C U R R E N T200A/µs400A/µs 600A/µs 800A/µs 1000A/µs0A5A10A15A20A25A30Ad i r r /d t , D I O D E P E A K R A T E O F F A L LO F R E V E R S E R E C O V E R Y C U R R E N T200A/µs400A/µs 600A/µs 800A/µs 1000A/µs0A/µs100A/µs200A/µs300A/µs400A/µsdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 23. Typical reverse recovery current as a function of diode current slope (V R = 800V, T j = 150°C)Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R = 800V, T j = 150°C)I F , F O R W A R D C U R R E N T0V1V 2V 3V 4V0A 10A20A30A40A50AV F , F O R W A R D V O L T A G E0°C40°C 80°C 120°C0.0V0.5V1.0V1.5V2.0V2.5V3.0VV F , FORWARD VOLTAGET j , JUNCTION TEMPERATUREFigure 25. Typical diode forward current as a function of forward voltage Figure 26. Typical diode forward voltage as a function of junction temperatureZ t h J C D , T R A N S I E N T T H E R M A L I M P E D A N C E10µs100µs 1ms 10ms 100ms 1s10-2K/W10-1K/W100K/Wt p , PULSE WIDTHFigure 27. Diode transient thermalimpedance as a function of pulse width (D = t p / T )dimensionssymbol[mm][inch]minmax minmax A 4.78 5.280.18820.2079B 2.29 2.510.09020.0988C 1.78 2.290.07010.0902D 1.09 1.320.04290.0520E 1.73 2.060.06810.0811F 2.67 3.180.10510.1252G 0.76 max 0.0299 maxH 20.8021.160.81890.8331K 15.6516.150.61610.6358L 5.21 5.720.20510.2252M 19.8120.680.77990.8142N 3.560 4.9300.14020.1941∅P3.610.1421Q6.126.220.24090.2449TO-247ACFigure A. Definition of switching timesIr r m90% Ir r m10% Ir r mdi/dtFtr rIFi,vtQSQFtStFVRdi/dtr rQ=Q Qr r S F+t=t tr r S F+Figure C. Definition of diodesswitching characteristicsτ1τ2nτr r rFigure D. Thermal equivalentcircuitFigure B. Definition of switching lossesPublished byInfineon Technologies AG i Gr.,Bereich KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protecthuman life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.。

HGTG15N120C3资料

HGTG15N120C3, HGTP15N120C3,HGT1S15N120C3, HGT1S15N120C3S35A, 1200V, UFS Series N-Channel IGBTsFeatures•35A, 1200V , T C = 25o C•1200V Switching SOA Capability•Typical Fall Time . . . . . . . . . . . . . .350ns at T J = 150o C •Short Circuit Rating •Low Conduction LossFormerly Developmental T ype T A49145.DescriptionThe HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar tran-sistor. The much lower on-state voltage drop varies only moder-ately between 25o C and 150o C.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls,power supplies and drivers for solenoids, relays and contactors.SymbolPackagingINTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS Ordering InformationPART NUMBER PACKAGE BRANDHGTG15N120C3TO-24715N120C3HGTP15N120C3TO-220AB 15N120C3HGT1S15N120C3TO-262AA 15N120C3HGT1S15N120C3STO-263AB15N120C3NOTE:When ordering, use the entire part number. Add the sufﬁx 9A to obtain the TO-263 variant in tape and reel; i.e.,HGT1S15N120C3S9A.CEGJEDEC STYLE TO-247JEDEC TO-220AB (ALTERNATE VERSION)JEDEC TO-262AAJEDEC TO-263AB4,364,0734,417,3854,430,7924,443,9314,466,1764,516,1434,532,5344,567,6414,587,7134,598,4614,605,9484,618,8724,620,2114,631,5644,639,7544,639,7624,641,1624,644,6374,682,1954,684,4134,694,3134,717,6794,743,9524,783,6904,794,4324,801,9864,803,5334,809,0454,809,0474,810,6654,823,1764,837,6064,860,0804,883,7674,888,6274,890,1434,901,1274,904,6094,933,7404,963,9514,969,027EMITTERCOLLECTORGATECOLLECTOR (FLANGE)COLLECTOR (FLANGE)EMITTERCOLLECTOR GATEEMITTERCOLLECTORGATECOLLECTOR (FLANGE)EMITTERGATE COLLECTOR (FLANGE)June 1997File Number4244.3CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.Absolute Maximum Ratings T C = 25o C, Unless Otherwise SpeciﬁedHGTG15N120C3, HGTP15N120C3,HGT1S15N120C3S, HGT1S15N120C3S UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES1200V Collector Current ContinuousAt T C = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I C2535AAt T C = 110o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I C11015A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I CM120A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GES±20V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GEM±30V Switching Safe Operating Area at T J = 150o C, Figure 14 . . . . . . . . . . . . . .SSOA15A at 1200VPower Dissipation Total at T C = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D164W Power Dissipation Derating T C > 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32W/o C Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E ARV100mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . .T J, T STG-55 to 150o C Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . .T L260o C Short Circuit Withstand Time (Note 2) at V GE = 15V. . . . . . . . . . . . . . . . . . . .t SC6µs Short Circuit Withstand Time (Note 2) at V GE = 10V. . . . . . . . . . . . . . . . . . . .t SC25µsCAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.NOTES:1.Pulse width limited by maximum junction temperature.2.V CE(PK) = 720V, T J = 125o C, R GE = 25Ω.Electrical Speciﬁcations T C = 25o C, Unless Otherwise SpeciﬁedPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV CES I C = 250µA, V GE = 0V1200--V Emitter to Collector Breakdown Voltage BV ECS I C = 10mA, V GE= 0V1525-V Collector to Emitter Leakage Current I CES V CE = BV CES T C = 25o C--250µAT C = 150o C-- 3.0mACollector to Emitter Saturation Voltage V CE(SAT)I C = I C110,V GE = 15V T C = 25o C- 2.3 3.5V T C = 150o C- 2.4 3.2VGate to Emitter Threshold Voltage V GE(TH)I C = 250µA, V CE = V GE 4.0 5.67.5V Gate to Emitter Leakage Current I GES V GE =±20V--±100nASwitching SOA SSOA T J = 150o C, R G = 10ΩV GE = 15V, L = 1mH V CE(PK)= 960V40--A V CE(PK)= 1200V15--AGate to Emitter Plateau Voltage V GEP I C = I C110, V CE = 0.5 BV CES-8.8-VOn-State Gate Charge Q g(ON)I C = I C110,V CE = 0.5 BV ES V GE = 15V-75100nC V GE = 20V-100130nCCurrent Turn-On Delay Time t d(ON)I T J = 150o CI CE = I C110V CE(PK) = 0.8 BV CESV GE = 15VR G = 10ΩL = 1mH -17-nsCurrent Rise Time t rI-25-ns Current Turn-Off Delay Time t d(OFF)I-470550ns Current Fall Time t fI-350400ns Turn-On Energy E ON-2100-µJ Turn-Off Energy (Note 3)E OFF-4700-µJ Thermal Resistance RθJC--0.76o C/W NOTE:3.Turn-Off Energy Loss (E OFF) is deﬁned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse andending at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total T urn-Off Energy Loss. Turn-On losses include losses due to diode recovery.Typical Performance CurvesFIGURE 1.TRANSFER CHARACTERISTICS FIGURE 2.SATURATION CHARACTERISTICSFIGURE 3.COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4.COLLECTOR TO EMITTER ON-STATE VOLTAGEFIGURE 5.DC COLLECTOR CURRENT AS A FUNCTION OFCASE TEMPERATUREFIGURE 6.SHORT CIRCUIT WITHSTAND TIME1014I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )6V GE , GATE TO EMITTER VOLTAGE (V)800100DUTY CYCLE <0.5%, V CE = 10V PULSE DURATION = 250µs T C = -55o CT C = 150o C T C = 25o C128204060V CE , COLLECTOR TO EMITTER VOLTAGE (V)8001020I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )DUTY CYCLE <0.5%, T C = 25o C PULSE DURATION = 250µsV GE = 15V12V 10V 9V 8.5V 8V60402684I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )610V CE , COLLECTOR TO EMITTER VOLTAGE (V)2510PULSE DURATION = 250µsDUTY CYCLE <0.5%, V GE = 10VT C = 150o CT C = 25o C428051520I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )4V CE , COLLECTOR TO EMITTER VOLTAGE (V)2010100PULSE DURATION = 250µsDUTY CYCLE <0.5%, V GE = 15VT C = 25o C T C = 150o C40608002682550751001251500510152025I C E , D C C O L L E C T O R C U R R E N T (A )T C , CASE TEMPERATURE (o C)V GE = 15V3035I S C , P E A K S H O R T C I R C U I T C U R R E N T (A )2575125t S C , S H O R T C I R C U I T W I T H S T A N D T I M E (µs )101112V GE , GATE TO EMITTER VOLTAGE (V)14151315010050I SCt SC153035V CE = 720V , R GE = 25Ω, T J = 125o C252010FIGURE 7.TURN-ON DELAY TIME AS A FUNCTION OFCOLLECTOR TO EMITTER CURRENT FIGURE 8.TURN-OFF DELAY TIME AS A FUNCTION OFCOLLECTOR TO EMITTER CURRENTFIGURE 9.TURN-ON RISE TIME AS A FUNCTION OFCOLLECTOR TO EMITTER CURRENT FIGURE 10.TURN-OFF FALL TIME AS A FUNCTION OFCOLLECTOR TO EMITTER CURRENTFIGURE 11.TURN-ON ENERGY LOSS AS A FUNCTION OFCOLLECTOR TO EMITTER CURRENT FIGURE 12.TURN-OFF ENERGY LOSS AS A FUNCTION OFCOLLECTOR TO EMITTER CURRENTt d (O N )I , T U R N -O N D E L A Y T I M E (n s )1020305101520I CE , COLLECTOR TO EMITTER CURRENT (A)1002550V GE = 10VV GE = 15VT J = 150o C, R G = 10Ω, L = 1mH, V CE(PK) = 960VI CE , COLLECTOR TO EMITTER CURRENT (A)t d (O F F )I , T U R N -O F F D E L A Y T I M E (n s )40030010051015202520060050030V GE = 10V or 15VT J = 150o C, R G = 10Ω, L = 1mH, V CE(PK) = 960VI CE , COLLECTOR TO EMITTER CURRENT (A)t r I ,T U R N -O N R I S E T I M E (n s )10100510152025V GE = 15VV GE = 10VT J = 150o C, R G = 10Ω, L = 1mH, V CE(PK) = 960V1300I CE , COLLECTOR TO EMITTER CURRENT (A)t f I ,F A L L T I M E (n s )51015202530100300200400500V GE = 10VV GE = 15VT J = 150o C, R G = 10Ω, L = 1mH, V CE(PK) = 960VI CE , COLLECTOR TO EMITTER CURRENT (A)5101520E O N , T U R N -O N E N E R G Y L O S S (m J )25T J = 150o C, R G = 10Ω, L = 1mH, V CE(PK) = 960VV GE = 10VV GE = 15V246810I CE , COLLECTOR TO EMITTER CURRENT (A)E OF F , T U R N -O F F E N E RG Y L O S S (m J )510152025302468101201416T J = 150o C, R G = 10Ω, L = 1mH, V CE(PK) = 960VV GE = 10VV GE = 15VFIGURE 13.OPERATING FREQUENCY AS A FUNCTION OFCOLLECTOR TO EMITTER CURRENTFIGURE 14.SWITCHING SAFE OPERATING AREAFIGURE 15.CAPACITANCE AS A FUNCTION OF COLLECTORTO EMITTER VOLTAGEFIGURE 16.GATE CHARGE WAVEFORMSFIGURE 17.IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASEI CE , COLLECTOR TO EMITTER CURRENT (A)f M A X , O P E R A T I N G F R E Q U E N C Y (k H z )5102025101f MAX2= (P D - P C )/(E ON + E OFF )P D = ALLOWABLE DISSIPATION P C = CONDUCTION DISSIPATIONf MAX1 = 0.05/(t d(OFF)I + t d(ON)I )(DUTY FACTOR = 50%)R θJC =0.76o C/W V GE = 15V2030100V GE = 10VT J = 150o C, T C = 75o C, R G = 10ΩL = 1mH, V CE(PK)= 960VV CE(PK), COLLECTOR TO EMITTER VOLTAGE (V)I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )2004006008001000120001020304050T J = 150o C, V GE = 15V , R G = 10ΩC RES V CE , COLLECTOR TO EMITTER VOLTAGE (V)51015202505001000150020002500C , C A P A C I T A N C E (p F )C IESC OES300035004000FREQUENCY = 1MHzV G E , G A T E T O A E M I T T E R V O L T A G E (V )1286204080160120144100V CE = 400VV CE = 1200VV CE = 800VI G(REF) = 4.21mA, R L = 80Ω, T C = 25o CQ g , GATE CHARGE (nC)t 1,RECTANGULAR PULSE DURATION (s)10-310-210-110010-510-310-210-110010110-4SINGLE PULSEZ θJ C ,N O R M A L I Z E D T H E R M A L I M P E D A N C Et 1t 2P DDUTY FACTOR, D = t 1 / t 2PEAK T J = (P D X Z θJC X R θJC ) + T CDUTY CYCLE - DESCENDING ORDER 0.50.20.10.050.010.02Handling Precautions for IGBT’sInsulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures,however, IGBTs are currently being extensively used in pro-duction by numerous equipment manufacturers in military,industrial and consumer applications, with virtually no dam-age problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken:1.Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26™” or equivalent.2.When devices are removed by hand from their carriers,the hand being used should be grounded by any suitable means - for example, with a metallic wristband.3.Tips of soldering irons should be grounded.4.Devices should never be inserted into or removed from circuits with power on.5.Gate Voltage Rating - Never exceed the gate-voltage rat-ing of V GEM . Exceeding the rated V GE can result in per-manent damage to the oxide layer in the gate region.6.Gate Termination - The gates of these devices are es-sentially capacitors. Circuits that leave the gate open-cir-cuited or ﬂoating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.7.Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate pro-tection is required an external zener is recommended.ECCOSORBD ™ is a Trademark of Emerson and Cumming, Inc.Operating Frequency InformationOperating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a speciﬁc application. Other typical fre-quency vs collector current (I CE ) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows f MAX1 or f MAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junc-tion temperature.f MAX1 is deﬁned by f MAX1 = 0.05/(t d(OFF)I + t d(ON)I ). Dead-time (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other deﬁnitions are possible. t d(OFF)I and t d(ON)I are deﬁned in Figure 19.Device turn-off delay can establish an additional frequency limiting condition for an application other than T JMAX .t d(OFF)I is important when controlling output ripple under a lightly loaded condition.f MAX2 is deﬁned by f MAX2 = (P D - P C )/(E OFF + E ON ). The allowable dissipation (P D ) is deﬁned by P D = (T JMAX -T C )/R θJC . The sum of device switching and conduction losses must not exceed P D . A 50% duty factor was used (Figure 13) and the conduction losses (P C ) are approxi-mated by P C = (V CE x I CE )/2.E ON and E OFF are deﬁned in the switching waveforms shown in Figure 19. E ON is the integral of the instantaneous power loss (I CE x V CE ) during turn-on and E OFF is the inte-gral of the instantaneous power loss (I CE x V CE ) during turn-off. All tail losses are included in the calculation for E OFF ; i.e.the collector current equals zero (I CE = 0).Test Circuit and WaveformsFIGURE 18.INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19.SWITCHING TEST WAVEFORMSR G = 10ΩL = 1mH V DD = 960V+-RHRP15120t fIt d(OFF)It rI t d(ON)I10%90%10%90%V CEI CEV GEE OFFE ONTO-2473 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGELEAD NO. 1-GATE LEAD NO. 2-COLLECTOR LEAD NO. 3-EMITTER TERM. 4MOUNTING FLANGE-COLLECTORAbb 1c DELL 1ØR 12e 131J 1ØSQØPBACK VIEWTERM. 43e b 22SYMBOLINCHESMILLIMETERS NOTESMIN MAX MIN MAX A 0.1800.190 4.58 4.82-b 0.0460.051 1.17 1.292, 3b 10.0600.070 1.53 1.771, 2b 20.0950.105 2.42 2.661, 2c 0.0200.0260.510.661, 2, 3D0.8000.82020.3220.82-E 0.6050.62515.3715.87-e 0.219 TYP 5.56 TYP 4e 10.438 BSC 11.12 BSC 4J 10.0900.105 2.29 2.665L 0.6200.64015.7516.25-L 10.1450.155 3.69 3.931ØP 0.1380.144 3.51 3.65-Q 0.2100.220 5.34 5.58-ØR 0.1950.205 4.96 5.20-ØS0.2600.2706.616.85-NOTES:1.Lead dimension and ﬁnish uncontrolled in L 1.2.Lead dimension (without solder).3.Add typically 0.002 inches (0.05mm) for solder coating.4.Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.5.Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.6.Controlling dimension: Inch.7.Revision 1 dated 1-93.TO-220AB (Alternate Version)3 LEAD JEDEC TO-220AB PLASTIC PACKAGELEAD NO. 1-GATE LEAD NO. 2-COLLECTOR LEAD NO. 3-EMITTER TERM. 4-COLLECTOREØPDLL 160ob 1be e 1H 11J 123TERM. 4QcA 1ASYMBOLINCHESMILLIMETERS NOTESMIN MAX MIN MAX A 0.1700.180 4.32 4.57-A 10.0480.052 1.22 1.322, 4b 0.0300.0340.770.862, 4b 10.0450.055 1.15 1.392, 4c 0.0180.0220.460.552, 4D0.5900.61014.9915.49-E 0.3950.40510.0410.28-e 0.100 TYP 2.54 TYP 5e 10.200 BSC 5.08 BSC 5H 10.2350.255 5.97 6.47-J 10.0950.105 2.42 2.666L 0.5300.55013.4713.97-L 10.1100.130 2.80 3.303ØP0.1490.153 3.79 3.88-Q0.1050.1152.662.92-NOTES:1.These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87.2.Dimension (without solder).3.Solder finish uncontrolled in this area.4.Add typically 0.002 inches (0.05mm) for solder plating.5.Position of lead to be measured 0.250 inches (6.35mm) from bot-tom of dimension D.6.Position of lead to be measured 0.100 inches (2.54mm) from bot-tom of dimension D.7.Controlling dimension:Inch.8.Revision 2 dated 10-95.3 LEAD JEDEC TO-262AA PLASTIC PACKAGELEAD NO. 1-GATE LEAD NO. 2-COLLECTOR LEAD NO. 3-EMITTER TERM. 4-COLLECTORH 1DL 1L1e e 1bb 1A 1AcJ 1E15o23TERM. 460oSYMBOLINCHESMILLIMETERS NOTESMIN MAX MIN MAX A 0.1700.180 4.32 4.57-A 10.0480.052 1.22 1.323, 4b 0.0300.0340.770.863, 4b 10.0450.055 1.15 1.393, 4c 0.0180.0220.460.553, 4D0.4050.42510.2910.79-E 0.3950.40510.0410.28-e 0.100 TYP 2.54 TYP 5e 10.200 BSC 5.08 BSC 5H 10.0450.055 1.15 1.39-J 10.0950.105 2.42 2.666L 0.5300.55013.4713.97-L 10.1100.1302.803.302NOTES:1.These dimensions are within allowable dimensions of Rev. A of JEDEC TO-262AA outline dated 6-90.2.Solder finish uncontrolled in this area.3.Dimension (without solder).4.Add typically 0.002 inches (0.05mm) for solder plating.5.Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.6.Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.7.Controlling dimension:Inch.8.Revision 4 dated 10-95.SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGELEAD NO. 1-GATE LEAD NO. 3-EMITTER TERM. 4-COLLECTORMINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONSEA 1AH 1DLbee 1L 2b 1L 1cJ TERM. 413113L 3b 2TERM. 4.450.350.150(3.81).080(2.03).080(2.03).700(11.43)(8.89)(17.78).062(1.58).062(1.58)SYMBOLINCHESMILLIMETERS NOTESMIN MAX MIN MAX A 0.1700.180 4.32 4.57-A 10.0480.052 1.22 1.324, 5b 0.0300.0340.770.864, 5b 10.0450.055 1.15 1.394, 5b 20.310-7.88-2c 0.0180.0220.460.554, 5D 0.4050.42510.2910.79-E0.3950.40510.0410.28-e 0.100 TYP 2.54 TYP 7e 10.200 BSC 5.08 BSC 7H 10.0450.055 1.15 1.39-J 10.0950.105 2.42 2.66-L 0.1750.195 4.45 4.95-L 10.0900.110 2.29 2.794, 6L 20.0500.070 1.27 1.773L 30.315-8.01-2NOTES:1.These dimensions are within allowable dimensions of Rev. C of JEDEC TO-263AB outline dated 2-92.2.L 3 and b 2 dimensions established a minimum mounting surface for terminal 4.3.Solder finish uncontrolled in this area.4.Dimension (without solder).5.Add typically 0.002 inches (0.05mm) for solder plating.6.L 1 is the terminal length for soldering.7.Position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension D.8.Controlling dimension:Inch.9.Revision 7 dated 10-95.11All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.For information regarding Intersil Corporation and its products, see web site Sales Ofﬁce HeadquartersNORTH AMERICA Intersil CorporationP. O. Box 883, Mail Stop 53-204Melbourne, FL 32902TEL:(407) 724-7000FAX: (407) 724-7240EUROPE Intersil SAMercure Center100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111FAX: (32) 2.724.22.05ASIAIntersil (Taiwan) Ltd.Taiwan Limited7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of ChinaTEL: (886) 2 2716 9310FAX: (886) 2 2715 3029HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3STO-263AB24mm TAPE AND REEL330mm100mm13mm30.4mm24.4mm2.0mm4.0mm1.75mm 1.5mm DIA. HOLEC LCOVER TAPEUSER DIRECTION OF FEEDGENERAL INFORMATION1. USE "9A" SUFFIX ON PART NUMBER.2. 800 PIECES PER REEL.3. ORDER IN MULTIPLES OF FULL REELS ONL Y .4. MEETS EIA-481 REVISION "A" SPECIFICATIONS.16mm24mmACCESS HOLE40mm MIN.Revision 7 dated 10-95元器件交易网。

IXGH20N120中文资料

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
元器件交易网
IGBT
Preliminary Data Sheet
IXGH 20N120 VCES IXGT 20N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 40 A = 2.5 V = 380 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
power supplies discharge
Advantages
• Easy to mount with one screw • Reduces assembly time and cost • High power density
© 2002 IXYS All rights reserved
DS98966 (11/02)
TO-247 (IXGH)
TO-268 (IXGT)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md Weight Mounting torque (TO-247) TO-247 TO-268

FGA15N120FTDTU;中文规格书,Datasheet资料

FGA15N20FTD 1200V, 15A Trench IGBT
January 2008
FGA15N120FTD
1200V, 15A Field Stop Trench IGBT
Features
• Field stop trench technology • High speed switching • Low saturation voltage: VCE(sat) =1.58V @ IC = 15A • High input impedance • RoHS complaint
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2350 70 45 pF pF pF
1200 -
-
1 ±250
V mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125oC 3.5 6 1.58 1.83 7.5 2 V V V
tm
General Description
Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggeness. This device is designed for soft switching applications.

24G15N 用户手册说明书

24G15N安全 (1)标志惯例 (1)电源 (2)安装 (3)清洁 (4)其它 (5)设置 (6)物品清单 (6)安装支架和底座 (7)调整视角 (8)连接显示器 (9)Adaptive-Sync功能 (10)HDR (11)调节显示器 (12)热键 (12)OSD设定 (13)Luminance（明亮度） (14)Color Setup（颜色设置） (15)Picture Boost（窗口增亮） (16)OSD Setup（OSD设置） (17)Game Setting（游戏设置） (18)Extra（其它） (19)Exit（退出） (20)LED指示灯 (21)故障排除 (22)规格 (23)主要规格 (23)预设显示模式 (24)引脚分配 (25)即插即用版权说明.................................................................................................................................................................. ..................................................................................................................................................................2626安全标志惯例以下小节描述此文档中使用的标志惯例。

注释、注意和警告在本指南中，文本块可能带有图标并且以粗体或斜体打印。

这些文本块是注释、注意和警告，如下所示：注释：注意事项指示帮助你更好地使用你的计算机系统的重要信息。

注意：“注意”表示潜在的硬件损坏或数据丢失，并告诉您如何避免出现问题。

IXER60N120;中文规格书,Datasheet资料

644Features•NPT 3 IGBT- low saturation voltage- positive temperature coefficient for easy paralleling - fast switching- short tail current for optimized performance in resonant circuits•ISOPLUS 247TM package - isolated back surface- low coupling capacity between pins and heatsink - high reliability- industry standard outline Applications•single switchesand with complementary free wheeling diodes •choppers•phaselegs, H bridges, three phase bridges e.g. for- power supplies, UPS - AC, DC and SR drives - induction heatingIGBT Symbol Conditions Maximum RatingsV CES T VJ = 25°C to 150°C1200VV GES ± 20V I C25T C = 25°C 95A I C90T C = 90°C 60At SCV CE = 900 V; V GE = ±15 V; R G = 22 Ω; T VJ = 125°C 10µs (SCSOA)non-repetitiveP totT C = 25°C375W Symbol ConditionsCharacteristic Values(T VJ = 25°C, unless otherwise specified)min.typ.max.I C25=95AV CES=1200V V CE(sat) typ.= 2.1VNPT 3 IGBTin ISOPLUS 247TMG C EG = GateC = CollectorE = EmitterIsolated BacksideISOPLUS 247TME153432a su644Component Symbol ConditionsMaximum Ratings T VJ -55...+150°C T stg -55...+125°C V ISOL I ISOL ≤ 1 mA; 50/60 Hz 2500V~F Cmounting force with clip 20 (120)NSymbol ConditionsCharacteristic Values min.typ.max.C p coupling capacity between shorted 30pF pins and mounting tab in the case Weight6gEquivalent Circuits for SimulationConductionIGBT (typ. at V GE = 15 V; T J = 125°C)V 0 = 0.99 V; R 0 = 25 m ΩThermal ResponseIGBT (typ.)C th1 = 0.13 J/K; R th1 = 0.06 K/W C th2 = 0.32 J/K; R th2 = 0.27 K/Wp h a se - o ut644012340204060801001200123420406080100120V CEV I CV CEA V A4681012144080120160V V GEA I CV GE 01002003004005005101520nC Q GVV GEFig. 1Typ. output characteristics Fig. 2Typ. output characteristicsFig. 3Typ. transfer characteristicsFig. 4Typ. turn on gate chargeph- out64420400481216200.00010.0010.010.1110200400600800100012001400E onV CEts VmJE onFig. 5Typ. turn on energy and switching times versus collector currentFig. 9Reverse biased safe operating area Fig. 10Typ. transient thermal impedanceRBSOA分销商库存信息: IXYSIXER60N120。

APT60DQ120SG商品说明书

APT60DQ120SGDatasheet Ultrafast Soft Recovery Rectifier DiodeFinalApril 2018Contents1Revision History (1)1.1Revision A (1)2Product Overview (2)2.1Benefits (2)2.2Applications (2)3Electrical Specifications (3)3.1Absolute Maximum Ratings (3)3.2Electrical Performance (3)3.3Dynamic Characteristics (4)3.4Typical Performance Curves (4)3.5Reverse Recovery Overview (6)4Package Specification (7)4.1Package Outline Drawing (7)1Revision HistoryThe revision history describes the changes that were implemented in the document. The changes arelisted by revision, starting with the most current publication.1.1Revision ARevision A was published in April 2018. It is the first publication of this document.2Product OverviewFeaturesThe following are key features of the APT60DQ120SG device:Ultrafast recovery timesSoft recovery characteristicsLow forward voltageLow leakage currentAvalanche energy ratedRoHS compliant2.1BenefitsThe following are benefits of the APT60DQ120SG device:Higher switching frequencyLow switching lossesLow noise (EMI) switchingHigher reliability systemsIncreased system power density2.2ApplicationsThe APT60DQ120SG device is designed for the following applications: Power Factor Correction (PFC)Anti-parallel diodeSwitch-mode power supplyInverters/convertersMotor controllersFreewheeling diodeSwitch-mode power supplyInverters/convertersSnubber/clamp diode3Electrical SpecificationsThis section shows the electrical specifications for the APT60DQ120SG device.3.1Absolute Maximum RatingsThe following table shows the absolute maximum ratings for the APT60DQ120SG device.All ratings: T = 25 °C unless otherwise specified.CTable 1 • Absolute Maximum RatingsSymbol Parameter Ratings UnitV R Maximum DC reverse voltage1200VV RRM Maximum peak repetitive reverse voltage1200V RWM Maximum working peak reverse voltage1200I F(AV)Maximum average forward current (T = 103 °C, duty cycle = 0.5)C60AI F(RMS)RMS forward current87I FSM Non-repetitive forward surge current (T = 45 °C, 8.3 ms)J540E AVL Avalanche energy (1 A, 40 mH)20mJT , TJ STG Operating and storage temperature range–55 to 175°CT L Lead temperature for 10 seconds300The following table shows the thermal and mechanical characteristics of the APT60DQ120SG device.Table 2 • Thermal and Mechanical CharacteristicsSymbol Characteristic Min Typ Max UnitRθJC Junction-to-case thermal resistance0.40°C/WW T Package weight0.14oz4.0g 3.2Electrical PerformanceThe following table shows the static characteristics of the APT60DQ120SG device.Table 3 • Static CharacteristicsSymbol Characteristic Test Conditions Min Typ Max UnitV F Forward Voltage I = 60 AF 2.8 3.3VI = 120 AF 3.35I = 60 A, T = 125 °CF J 2.11I RM Maximum reverse leakage current V = 1200 VR100μAV = 1200 V, T = 125 °CR J500C J Junction capacitance V = 200 VR37pF3.3Dynamic CharacteristicsThe following table shows the dynamic characteristics of the APT60DQ120SG device.Table 4 • Dynamic CharacteristicsSymbol Characteristic Test ConditionsMin Typ Max Unit t rrReverse recovery timeI = 1 A, di /dt = –100 A/µs F F V = 30 V R T = 25 °CJ30nst rr Reverse recovery time I = 60 A, di /dt = –200 A/µs F F V = 800 V R T = 25 °CC 320 Q rr Reverse recovery change 630 nC I RRM Maximum reverse recovery current 5 A t rr Reverse recovery time I = 60 A, di /dt = –200 A/µs F F V = 800 V R T = 125 °CC 420 ns Q rr Reverse recovery charge 2810 nC I RRM Maximum reverse recovery current 12 A t rr Reverse recovery time I = 60 A, di /dt = –1000 A/µs F F V = 800 V R T = 125 °CC 190 ns Q rr Reverse recovery change 4415 nC I RRMMaximum reverse recovery current38A3.4Typical Performance CurvesThis section shows the typical performance curves for the APT60DQ120SG device.Figure 1 • Maximum Transient Thermal ImpedanceFigure 2 • Forward Current vs. Forward Voltage Figure 3 • trr vs. Current Rate of ChangeFigure 2 • Forward Current vs. Forward Voltage Figure 3 • trr vs. Current Rate of ChangeFigure 4 • Qrr vs. Current Rate of Change Figure 5 • IRRM vs. Current Rate of ChangeFigure 6 • Dynamic Parameters vs. Junction TemperatureFigure 7 • Maximum Average Forward Current vs. Case TemperatureFigure 8 • Junction Capacitance vs. Reverse Voltage1. 2. 3. 4. 5.Figure 8 • Junction Capacitance vs. Reverse Voltage3.5Reverse Recovery OverviewThe following illustration shows the reverse recovery testing and measurement information for the APT60DQ120SG device.Figure 9 • Diode Reverse Recovery Waveform and DefinitionsI —Forward conduction current.F di /dt—Rate of diode current change through zero crossing.F I —Maximum reverse recovery current.RRM t —Reverse recovery time, measured from zero crossing where diode current goes from positive to rr negative, to the point at which the straight line through I and 0.25 × I passes through zero.RRM RRM Q —Area under the curve defined by I and t .rr RRM rr4Package SpecificationThis section outlines the package specification for the APT60DQ120SG device.4.1Package Outline DrawingThis section details the D PAK package drawing of the APT60DQ120SG device. Dimensions are in3millimeters and (inches).Figure 10 • Package Outline DrawingMicrosemi Corporate HeadquartersOne Enterprise, Aliso Viejo,CA 92656 USAWithin the USA: +1 (800) 713-4113Outside the USA: +1 (949) 380-6100Fax: +1 (949) 215-4996Email:***************************© 2018 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners.Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice.Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at .053-4250。

IXSH35N120A;中文规格书,Datasheet资料

1250
18
TJ = 125°C
IC = 35A
1000
17
tfi
750
16
Eoff - millijoules tfi - nanoseconds
500
10
Eoff
250 0
5 10 20 30 40 50 60 70
IC - Amperes
Fig.9 Gate Charge Characteristic Curve
W RG = 2.7
dV/dt < 5V/ns
1
0.1
0.01 0
200 400 600 800 1000 1200 VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
0.1 D=0.2 D=0.1
D=0.05 D=0.02 0.01 D=0.01
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
70
A
35
A
140
A
ICM = 70
A
@ 0.8 VCES
10
ms
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
BVCES V
GE(th)
I
CES
10
9
TJ = 25°C
8
7
6
5
IC = 70A

IXGH16N170A;IXGH16N170AH1;IXGT16N170AH1;中文规格书,Datasheet资料

© 2005 IXYS All rights reservedV CES =1700V I C25= 16A V CE(sat)= 5.0V t fi(typ)= 70nsIXGH 16N170A IXGT 16N170A IXGH 16N170AH1IXGT 16N170AH1C (TAB)G = Gate C = Collector,E = EmitterTAB =CollectorTO-247 (IXGH)FeatureszHigh blocking voltage zHigh current handling capability zMOS Gate turn-on -drive simplicity zRugged NPT structure zMolding epoxies meet UL 94 V-0flammability classification zSONIC-FRD TM fast recovery copack diode zInternational standard packages JEDEC TO-268and JEDEC TO-247 ADApplications zCapacitor discharge & pulser circuits zAC motor speed control zDC servo and robot drives zDC choppers zUninterruptible power supplies (UPS)zSwitched-mode and resonant-mode power suppliesAdvantages zHigh power density zSuitable for surface mounting zEasy to mount with 1 screw,(isolated mounting screw hole)DS99235A(06/05)Symbol Test ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.BV CES I C = 250 μA, V GE = 0 V 1700V V GE(th)I C = 250 μA, V CE = V GE3.05.0V I CESV CE = 0.8 • V CES 16N170A 50μA V GE = 0 V, Note 116N170AH1100μA T J = 125°C 16N170A750μA 16N170AH1 1.5mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)I C= I C90, V GE = 15 V4.05.0V T J = 125°C4.8VSymbol Test Conditions Maximum RatingsV CES T J = 25°C to 150°C1700V VCGRT J = 25°C to 150°C; R GE = 1 M Ω1700V V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 16A I C90T C = 90°C 11A I F90T C = 90°C, Diode 17A I CMT C = 25°C, 1 ms40A SSOA V GE = 15 V, T VJ = 125°C, R G = 10Ω I CM = 40A (RBSOA)Clamped inductive load@ 0.8 V CESt SC T J = 125°C, V CE = 1200 V; V GE = 15 V, R G = 22Ω 10μs P C T C = 25°C190W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C M dMounting torque (M3)TO-247 1.13/10Nm/lb.in.Maximum lead temperature for soldering 300°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s 260°CWeightTO-2476g TO-2684gTO-268 (IXGT)GEHigh Voltage IGBTH1Preliminary Data SheetIXYS reserves the right to change limits, test conditions, and dimensions.SymbolTest ConditionsCharacteristic Values(T J = 25°C unless otherwise specified)min.typ. max.g fs I C = I C25; V CE = 10 V 713S Note 2C ies 1620pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz16N170A 83pF 16N170AH1110pF C res 31pF Q g 83nC Q ge I C = I C90, V GE = 15 V, V CE = 0.5 V CES10nC Q gc 31nC t d(on)36ns t ri 57ns t d(off)160300ns t fi 70150nsE off 0.851.5mJt d(on)38ns t ri 59ns E on 16N170A 1.5mJ 16N170AH12.5mJ t d(off)175ns t fi 155ns E off 2.0mJ R thJC 0.65K/WR thCK(TO-247)0.25K/WInductive load, T J = 125°C I C = I C25, V GE = 15 V, R G = 10 ΩV CE = 0.5 V CES ,Note 3Inductive load, T J = 25°C I C = I C25, V GE = 15 V, R G = 10 ΩV CE = 0.5 V CES ,Note 3Notes:1.Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.2.Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %3.Switching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R G .IXYS MOSFETs and IGBTs are covered by 4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,585 one or moreof the following U.S. patents:4,850,0725,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405B26,759,6924,881,1065,034,7965,187,1175,486,7156,306,728 B16,583,5056,710,4636771478 B2Reverse Diode (FRED)Characteristic Values Symbol Test Conditionsmin.typ. max. (T J = 25°C unless otherwise specified)V F I F = 20A, V GE = 0 V, Note 22.5 2.9V T J = 125°C2.5V t rr I F = 20A, V GE = 0 V, -di F /dt = 450 A/μs 230ns V R = 1200 VT J = 125°C400ns I RM23A T J = 125°C27AR thJC0.9K/W© 2005 IXYS All rights reservedPRELIMINARY T ECHNICAL I NFORMATIONThe product presented herein is under development. The Technical Specifications offeredare derived from data gathered during objective characterizations of preliminary engineer-ing lots; but also may yet contain some information supplied during a subjective pre-production design evaluation. IXYS reserves the right to change limits, test conditions, anddimensions without notice.IXYS reserves the right to change limits, test conditions, and dimensions.分销商库存信息:IXYSIXGH16N170A IXGH16N170AH1IXGT16N170AH1。

C.N-2015中文规格书

深圳市菜鸟电子有限公司地址：深圳市龙华新区上油松村产品规格书产品型号.:C.N-2015版本号：X1.0客户:产品描述: Input:110~240V AC 50/60Hz Output:12VDC1.5A客户型号:样品编号：日期:1.范围 (4)2.电气规格 (4)2.1. 交流输入 (4)2.1.1.输入电压 (4)2.1.2. 输入频率 (4)2.1.3. 效率 (4)2.1.4. 待机功耗 (4)2.1.5. 浪涌电流 (4)2.1.6. 最大AC输入电流 (4)2.2. DC 输出 (4)2.2.1. 输出电压 (4)2.2.2. 输出过冲电压 (4)2.2.3. 输出电流 (5)2.2.4. 输出纹波和杂讯 (5)2.2.5. 输出开机;延时 (5)2.2.6. 过功率保护 (5)2.2.7. 保持时间 (5)2.2.8. 动态负载规则 (5)2.2.9. 短路保护 (5)3. 机械性能 (5)3.1. 外观尺寸 (5)4. 环境 (6)4.1. 温度和湿度 (6)4.2. 振动 (6)4.3. 落地试验 (6)4.4 EMI (6)4.4.1. 传导 (6)4.4.2. 辐射 (6)4.5. 产品温度 (6)5. 可靠性 (6)5.1平均无故障时间…….…………………………………………………………………………. .66. 安全测试 (7)6.1. Hi-Pot (7)6.2.绝缘测试 (7)6.3.泄漏电流 (7)7. ROHS (7)1. 范围本产品C.N-2015、18W为宽电压输入,单组直流电压输出的开关电源适配器2. 电器规格2.1. 交流输入2.1.1. 输入电压产品工作电压110-240VAC + 10% .2.1.2.输入频率47 到63 Hz.2.1.3. 效率本产品转换效率可达到75%以上, 输入115VAC/60HZ 输出满载的条件下．2.1.4. 待机功耗当产品输入电压为240VAC/50HZ输出为0A时，最大损耗为0.8W2.1.5. 浪涌电流产品在冷开机状态下输入电压为110VAC 90度角时50A MAX输入电压为240V AC90度角时50A MAX2.1.6最大输入ＡＣ电流0.6A @110Vac,0.4A @180Vac.2.2. DC 输出2.2.1. 输出电压在额定的电压和频率．连续输出电流的最小值和最大值如下表．输出电压的量测在输出末端.2.2.2. 输出过冲电压当产品输入电压为规格要求的最大或最小，输出为空载时，开机或关机瞬间的最大输出电压调节率不大于8%。

15N120-ASEMI场效应管15N120

15N120-ASEMI场效应管15N120编辑-Z15N120在TO-220封装⾥引出3个引脚，是⼀款低功耗场效应管。

15N120的⼆极管浪涌正向电流(IFM)为45A，G-E漏电流(IGES)为100nA，其⼯作时耐温度范围为-55~150摄⽒度。

15N120的栅极-发射极电压(VGES)为±20V。

15N120的电性参数是：⼆极管连续正向电流(IF)为15A，集电极-发射极电压(VCES)为1200V，⼆极管正向电压降(VFM)为1.7V，反向恢复时间(trr)为210NS。

15N120参数描述型号：15N120封装：TO-220特性：低功耗场效应管电性参数：15A 1200V⼆极管连续正向电流(IF)：15A⼆极管浪涌正向电流(IFM)：45A集电极-发射极电压(VCES)：1200V栅极-发射极电压(VGES)：±20V⼆极管正向电压降(VFM)：1.7VG-E漏电流(IGES)：100nA反向恢复时间(trr)：210NS⼯作温度：-55~+150℃引线数量：315N120插件封装系列。

它的本体长度为20.1mm，加引脚长度为40.4mm，宽度为15.8mm，⾼度为5.0mm，脚间距为5.45mm。

15N120有⾼速切换、⾼输⼊阻抗等特性。

15N120采⽤NPT技术，提供低传导和开关损耗，为感应加热(IH)，电机控制，通⽤逆变器和不间断电源(UPS)等应⽤提供解决⽅案。

以上就是关于15N120-ASEMI场效应管15N120的详细介绍。

强元芯电⼦是⼀家集科研开发、制造、销售为⼀体的国家⾼新技术企业。

12年专注于整流桥、电源IC、及肖特基、快恢复⼆极管、汽车电⼦的研发与⽣产，致⼒于半导体⾏业，专注电源领域。

ASEMI产品⼴泛应⽤于：开关电源、LED照明、集成电路、移动通讯、计算机、⼯业⾃动化控制设备、汽车电⼦以及液晶电视、IoT、智能家居、医疗仪器、电磁炉等⼤⼩家电。

IXDT30N120资料

Symbol Conditions Maximum RatingsV CES T J = 25°C to 150°C1200V V CGR T J = 25°C to 150°C; R GE = 20 k W 1200V V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 60A I C90T C = 90°C38A I CMT C = 90°C, t p = 1 ms76A RBSOA V GE = ±15 V, T J = 125°C, R G = 47 W I CM = 50A Clamped inductive load, L = 30 µH V CEK < V CESt SCV GE = ±15 V, V CE = V CES , T J = 125°C 10µs (SCSOA)R G = 47 W , non repetitive P C T C = 25°CIGBT 300W Diode135W T J -55 ... +150°C T stg-55 ... +150°C Maximum lead temperature for soldering 300°C1.6 mm (0.062 in.) from case for 10 s M d Mounting torque1.1/10Nm/lb.in.Weight6gV CES = 1200 VI C25= 60 A V CE(sat) typ = 2.4 VFeaturesq NPT IGBT technology q low saturation voltage q low switching lossesq square RBSOA, no latch up q high short circuit capabilityqpositive temperature coefficient for easy parallelingq MOS input, voltage controlled q optional ultra fast diodeqInternational standard packagesAdvantagesq Space savingsqHigh power density qIXDT:surface mountable high power packageTypical ApplicationsqAC motor speed control q DC servo and robot drives q DC choppersq Uninteruptible power supplies (UPS)qSwitch-mode and resonant-mode power suppliesHigh Voltage IGBT with optional DiodeShort Circuit SOA Capability Square RBSOAIXDH 30N120IXDH 30N120 D1IXDT 30N120IXDT 30N120 D1Symbol ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.V (BR)CES V GE = 0 V1200V V GE(th)I C = 1 mA, V CE = V GE 4.56.5VI CES V CE = V CEST J = 25°C 1.5mAT J = 125°C2.5mA I GES V CE = 0 V, V GE = ± 20 V ± 500nAV CE(sat)I C = 30 A, V GE = 15 V2.42.9VTO-247 AD (IXDH)G ECC (TAB)TO--268 AA (IXDT)GEC (TAB)IXDH 30N120IXDH 30N120 D1IXDT 30N120IXDT 30N120 D1GCE031SymbolConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)C ies C oes V CE = 25 V, V C res Q g I C = 30 A, V GE d(on)r d(off)f E on E off R thJC R Package with heatsink compoundInductive load, T I C = 30 A, V V CE = 600 V, R Reverse Diode (FRED) [D1 version only]Characteristic Values(T J = 25°C, unless otherwise specified)Symbol Conditionsmin.typ.max.V F I F = 30 A, V GE = 0 V2.5 2.7V I F = 30 A, V GE = 0 V, T J = 125°C 2.0V I F T C = 25°C 60A T C = 90°C35A I RM I F = 30 A, -di F /dt = 400 A/µs, V R = 600 V 20A t rr V GE = 0 V, T J = 125°C200ns t rr I F = 1 A, -di F /dt = 100 A/µs, V R = 30 V, V GE = 0 V40ns R thJC1K/W0123410203040506070800.00.5 1.001020304050600.00.5 1.0 1.5 2.02.53.0 3.5T J = 25°C567891011A I CV CEVV V V GEV FA Fig. 1Typ. output characteristics Fig. 2Typ. output characteristicsFig. 3Typ. transfer characteristicsFig. 4Typ. forward characteristics offree wheeling diodeFig. 5Typ. turn on gate chargeFig. 6Typ. turn off characteristics offree wheeling diodeFig. 7Typ. turn on energy and switchingtimes versus collector currentFig. 11Reverse biased safe operating areaFig. 12Typ. transient thermal impedanceRBSOA1020024681012140.000010.00010.0010.010.1120040060080010001200E ont d(on)t r E on V CEts VmJ。

施耐德电气 C120H 断路器用户指南

How to ensure maintenance of installationRoutine operating checks of residual current devices: local test and loop testLegal informationThe Schneider Electric brand and any trademarks of Schneider Electric SE and its subsidiaries referred to in thisguide are the property of Schneider Electric SE or its subsidiaries. All other brands may be trademarks of theirrespective owners.This guide and its content are protected under applicable copyright laws and furnished for informational use only.No part of this guide may be reproduced or transmitted in any form or by any means (electronic, mechanical,photocopying, recording, or otherwise), for any purpose, without the prior written permission of Schneider Electric.Schneider Electric does not grant any right or license for commercial use of the guide or its content, except for anon-exclusive and personal license to consult it on an "as is" basis.The installation, maintenance and eventual replacement of Schneider Electric products and equipment must onlybe carried out by a qualified electrician.As standards, specifications, and designs change from time to time, information contained in this guide may besubject to change without notice.To the extent permitted by applicable law, no responsibility or liability is assumed by Schneider Electric and itssubsidiaries for any errors or omissions in the informational content of this material or consequences arising out ofor resulting from the use of the information contained herein.As part of a group of responsible, inclusive companies, we are updating our communications that containnon-inclusive terminology. Until we complete this process, however, our content may still contain standardizedindustry terms that may be deemed inappropriate by our customers.1- Test frequencyResidual current devices must be tested as required by local regulations or guidelines on electrical installation inspection and maintenance.In the absence of any local regulations or guidelines, Schneider Electric recommends that the test is carried out:For Voltage independent RCDs:b after initial connection and any subsequent reconnectionb every six months , for devices installed in AF1* environmental conditions (no dust, corrosion, high humidity, etc.)b every month , for devices installed in AF2* to AF4* environmental conditions or highly exposed to voltage surges.(*) Refer to tables in page 5 for definition of classes of environmental conditions.For Voltage dependent RCDs:b after initial connection and any subsequent reconnectionb every month , whatever the environmental conditions or exposition to voltage surges.Residual current devices are designed to protect against hazardous earth fault current.That is why:- the electrical installation operation andmaintenance standards require these protection devices to be tested at regular intervals - the IEC 61008 and IEC 61009 series ofproduct standards require such devices to be fitted with a test button (marked "T") on the front panel.The user can therefore check and be certain that the device is working correctly .The test button allows the user to check if the RCD is able to trip in presence of an earth leakage current. If the device doesn't trip, it must be examined to determine if the device is out of service.2Version : 1.0 - 11/05/2023CA9UG000E3- If the RCD doesn't trip during the testThis event is mainly due to a cause that is external to the residual current device.The table below shows the possible causes, the additional checks and tests to becarried out and the corrective actions to be taken, depending on the results.After a corrective action has been performed, repeat the test.If the RCD doesn't trip after all the additional actions, it must be tested with an external RCD tester.3 Version : 1.0 - 11/05/2023CA9UG000E4- Checking with a RCD testerIf the RCD doesn't trip after all the additional actions, it must be tested with an external RCD tester. If it is confirmed that it is out of service, it must be replaced immediately.For the tests performed to be valid, these devices must comply with IEC/EN 61557-6.These devices are used to check: b the operating voltageb the tripping threshold (according to the sensitivity I∆n) of the residual current deviceb the tripping times (I∆n, 2 x I∆n, 5 x I∆n, etc.).Procedureb Disconnect the fixed and portable loads (if the residual current device protects the power outlets).b Connect the test device to the downstream terminals of the residual current device or to a downstream power outlet.b the residual current device (RCD) should trip.Some tertiary and industrial installation maintenance regulations require residualcurrent devices to be checked with a specificdevice.I m a g e 15299.e p sEarth leakage currentRCD testerRCD testerIn case of TN method of earthing with RCD short-circuit current, Ik calculated by some testers can be wrong if the measurement is done downstream of the RCD, especially if RCD is 30 mA.Measurement shall be done upstream RCD to obtain correct values of Ik. The protection provided by the RCD is independent from the value of Ik.4Version : 1.0 - 11/05/2023CA9UG000ETable 1: classification for external influences in the presence of corrosive or polluting substances andExample: a technical local of swimming pool must be considered as AF4, because it is subject to the permament presence of corrosive chlorinated derivatives.The materials must be specially studied according to the nature of the agents: reinforced A-SI type of Acti9 offer and cabinet in overpressure.Version : 1.0 - 11/05/2023CA9UG000E。

IXYS SEMICONDUCTOR DSA 20 C 150PN 说明书

protection circuits ● Low noise switching ● Low losses
Applications:
● Rectifiers in switch mode power supplies (SMPS)
● Free wheeling diode in low voltage converters
DSA 20 C 150PN
advanced
VRRM = 150 V IFAV = 2x 10 A VF = 0.74 V
Package:
TO-220FPAB ● Industry standard outline ● Plastic overmolded tab for
electrical isolation ● Epoxy meets UL 94V-0 ● RoHS compliant
TC = 25 °C
tp = 10 ms (50 Hz), sine TVJ = 45 °C
VR = V; f = 1 MHz
TVJ = 25 °C
I AS = A; L = 100 µH TVJ = 25 °C
VA = 1.5·VR typ.; f = 10 kHz
Ratings min. typ. max.
© 2005 IXYS all rights reserved
DSA 20 C 150PN
advanced
Symbol IRMS R thCH MD FC T stg Weight
Definition
RMS current thermal resistance case to heatsink mounting torque mounting force with clip storage temperature

XITANIUM电源说明书

Standard Lead Length
in. cm. Black White
Blue Red Green Violet
Enclosure
Case Length Case Width Case Height Mounting Length Mounting Width Overall Length
in. (mm) 3.30 (83) 3.06 (77) 1.34 (33.7) 2.91 (73.4) 2.67 (67.4) 3.29 (83)
Section I – Physical Characteristics 1.1 LED Driver shall be installed inside an electrical enclosure. 1.2 Wiring inside electrical enclosure shall comply with 600V/105°C rating or higher. 1.3 Housing is made of UL94-V0 flame retardant plastic. White color.
Electrical Specifications
LED120A1400C24F
Brand Name Driver Type Input Voltage Input Frequency
RoHS Approbations
Status
XITANIUM Electronic 120 50/60Hz No UL, CSA Active
Maximum Wiring Distance (at full load)
Wire Size (AWG) Distance (feet)
26
4

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IGBT
Lightspeed
Series
V CES =1200 V
I C25
=30 A V CE(sat)= 3.8 V t fi(typ)=115 ns
IXGH 15N120C IXGT 15N120C
C (TAB)
G = Gate, C = Collector,E = Emitter,
TAB = Collector
TO-247 AD (IXGH)
Features
•International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD •Low switching losses •MOS Gate turn-on -drive simplicity Applications
•AC motor speed control •DC servo and robot drives •DC choppers
•Uninterruptible power supplies (UPS)•
Switched-mode and resonant-mode power supplies
Advantages
•High power density
•Suitable for surface mounting •Easy to mount with 1 screw,(mounting screw hole)
98633A (7/00)
Symbol Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.
typ.max.
BV CES I C = 250 m A, V GE = 0 V 1200V V GE(th)I C = 250 m A, V CE = V GE
2.5
5V I CES V CE = V CES T J = 25°C 100m A V GE = 0 V
T J = 125°C
3.5mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)
I C
= I C90, V GE = 15 V
3.8
V T J = 125°C
3.0
V
Symbol Test Conditions Maximum Ratings
V CES T J = 25°C to 150°C
1200V V CGR T J = 25°C to 150°C; R GE = 1 M W 1200V V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 30A I C90T C = 90°C 15A I CM
T C = 25°C, 1 ms
60
A SSOA V GE = 15 V, T VJ = 125°C, R G = 10 W I CM = 40
A (RBSOA)Clamped inductive load @ 0.8 V CES
P C T C = 25°C
150
W T J -55 ... +150
°C T JM 150
°C T stg
-55 ... +150
°C Maximum Lead temperature for soldering 300
°C 1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
M d Mounting torque (M3)
1.13/10Nm/lb.in.
Weight
TO-247 AD 6g TO-268
4
g
TO-268 (IXGT)
(TAB)
G
E
IXYS reserves the right to change limits, test conditions, and dimensions.Preliminary data
Remarks: Switching times may
increase for V CE (Clamp) > 0.8 • V CES ,higher T J or increased R G Remarks: Switching times may
increase for V CE (Clamp) > 0.8 • V CES ,higher T J or increased R G
Symbol
Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.typ.max.
g fs I C = I C90; V CE = 10 V,
12
15S Pulse test, t £ 300 m s, duty cycle £ 2 %
C ies 1720
pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz
95pF C res 35pF Q g 69
nC Q ge I C = I C90, V GE = 15 V, V CE = 0.5 V CES 13nC Q gc 26nC t d(on)25ns t ri 15ns t d(off)150200ns t fi 115190ns E off 1.05 1.6
mJ t d(on)25ns t ri 18ns E on 0.60mJ t d(off)220ns t fi 250ns E off 2.1
mJ
R thJC 0.83K/W
R thCK
(TO-247)
0.25
K/W
Inductive load, T J = 125°C I C = I C90, V GE = 15 V
V CE = 0.8 V CES , R G = R off = 10 W Inductive load, T J = 25°C I C = I C90, V GE = 15 V
V CE = 0.8 V CES
, R G = R off = 10 W limeter
Inches Min.Max.Min.Max.A 19.8120.320.7800.800B 20.8021.460.8190.845C 15.7516.260.6100.640D 3.55 3.650.1400.144E 4.32 5.490.1700.216F 5.4 6.20.2120.244G 1.65 2.130.0650.084H - 4.5-0.177J 1.0 1.40.0400.055K 10.811.00.4260.433L 4.7 5.30.1850.209M 0.4
0.8
0.0160.031N
1.5
2.49
0.0870.102
TO-268AA (D 3 PAK)
Dim.
Millimeter Inches Min.Max.Min.Max.A 4.9 5.1.193.201A 1 2.7 2.9.106.114
A 2
.02.25.001.010b 1.15 1.45.045.057b 2 1.9 2.1.75.83C .4.65.016.026D 13.8014.00.543.551E 15.8516.05.624.632
E 1
13.313.6.524.535e 5.45 BSC .215 BSC H 18.7019.10.736.752L 2.40 2.70.094.106L1 1.20 1.40.047.055L2 1.00 1.15.039.045L3 0.25 BSC .010 BSC L4 3.80 4.10.150.161
分销商库存信息: IXYS
IXGH15N120C。