5082-7408-GHZ00中文资料
惠普全系列
3380 3530 3650 4200 4350 5090 4200 4540 5180
8000 Elite CMT
WM145PA#AB2
6380
Elite 7100 MT(Intel H57 芯片组) 芯片组
Elite 7100 MT WL852PA#AB2 3750
6000 Pro MT Intel Q43 芯片组 DDR3 内存的最大速度均取决于 Q43 芯片组（最大频率 芯片组* 芯片组（最大频率1066Mhz）和安装的处理器前端总线（FSB） ）和安装的处理器前端总线（ ）
2980 3350 3800
6005 Pro MT (AMD 785G 芯片组 芯片组)
6005 Pro MT 6005 Pro MT 6005 Pro MT WL851PA#AB2 6005 Pro MT-Athlon II X2 B24(3.0G/2M/65W)-1G DDR3 1333-320G-DVD- No FDD-FreeDOS- PS2KB-PS2 Optical Mouse -3/3/3 CTO CTO 6005 Pro MT-Phenom II X2 B55(3.0G/7M/80W)-2G DDR3 1333-320G-DVD- No FDD-FreeDOS- PS2KB-PS2 Optical Mouse -3/3/3 6005 Pro MT-Phenom II X4 B95(3.0G/8M/95W)-2G DDR3 1333-320G-NVIDIA GF 310 DP SH x16 512MB显卡-DVDRW- No FDD-Windows 7 Home BasicPS2KB-PS2 光电Mouse -3/3/3-22in1 Media Card Reader-并口-MS Office Ready 2007(60天试用)-HP Power Manager能耗管理
中兴 F160 中国联通定制手机 说明书
1 版权.................................................................................................................................. 1 2 关于中兴手机“防伪短信息自发功能”的声明 .............................................................. 2 3 简介.................................................................................................................................. 3 4 安全事项.......................................................................................................................... 4
4.1 安全须知..................................................................................................................... 4 4.2 安全警告和注意事项................................................................................................. 4 4.3 驾驶车辆时使用手机注意事项................................................................................. 4 4.4 医用设备及公共医疗场所......................................................................................... 4 4.5 日常使用..................................................................................................................... 5 4.6 可能引起爆炸的地点及爆破区................................................................................. 5 4.7 电子设备..................................................................................................................... 5 4.8 汽车安全..................................................................................................................... 5 4.9 飞机上的注意事项..................................................................................................... 6 4.10 电池使用................................................................................................................... 6 4.11 SAR 值 (电磁辐射比吸收率) ................................................................................. 6 4.12 使用充电器的注意事项........................................................................................... 7 4.13 清洁和维护............................................................................................................... 7 5 免责声明.......................................................................................................................... 8 6 您的手机.......................................................................................................................... 9 6.1 简述............................................................................................................................. 9 6.2 手机概观..................................................................................................................... 9 6.3 按键及功能............................................................................................................... 11 7 使用入门........................................................................................................................ 14 7.1 开启手机后盖........................................................................................................... 14 7.2 安装电池................................................................................................................... 14 7.3 取出电池................................................................................................................... 15 7.4 安装 SIM 卡 ............................................................................................................. 15 7.5 存储卡....................................................................................................................... 16
历代CPU最全明细参数表
历代CPU最全明细参数表－－添加CPU代码表下载曾几何时，我们判断计算机性能高低的标准只是处理器产品数字的大小以及外频的高低。
数字大的表示电脑的运算速度越快。
例如，80286要比8088和 8086要快，但80386要比80286快，而80486则是最快的。
但是时光荏苒，现在的计算机世界已经不同于十几年前了。
那么今天就让我们来看看当前的处理器。
与以往单凭处理器产品数字和外频来判断处理器性能相比，如今判断的标准还加入了处理器产品名称，型号名称，核心名称以及架构。
要想通过这些纷繁复杂的技术标准来判断处理器的性能的确不是一件简单的事情。
当然，你可以通过一些媒体了解具体某款或者某几款处理器的性能，但是，这多少有些片面。
今天我们要做的就是把过去7年内AMD和英特尔公司推出的处理器做一个详细列表，相信这样可以帮助你在更好的了解处理器的同时，也为自己在以后购买处理器时能够做到心中有数。
由于现在的处理器更新换代的速度极快，因此在这次的测评中，我们将英特尔Pentium II处理器，AMD Athlon处理器之前的产品都排除在外。
这次测评中两家公司的处理器产品的性能测试都是在适合处理器本身的条件下进行的。
那么我们这次对比处理器的测评都将就那些细节进行评定呢？主频大小，总线频率，缓存大小，晶体管数量，处理器核心名以及其他一些细节都将在下面的测试中被逐项列出。
由于处理器的型号是我们对于处理器的第一印象，因此这次的评定也将包括AMD Athlon XP以及后续处理器，英特尔Pentium 4以及后续处理器的型号。
我们首先要对处理器的核心名以及架构进行列表。
总体来说，它将更好的帮助我们去了解不同的x86处理器的性能究竟如何。
我们首先来看一下AMD处理器，也许有些英特尔的支持者会问为什么不先看英特尔处理器。
但是凡事都有先后，A在字母表中排了I前，因此我们还是先来看一下AMD公司的产品。
AMD处理器产品列表首先有几点需要说明，在列表中，通过核心名为Applebred和Thorton的处理器的模具尺寸与晶体管数量可以看出，他们的核心其实分别为 Thoroughbred和Barton。
毛斯（Moxa）UC-8200系列双核ARM Cortex-A7 1GHz IIoT网关产品说明书
UC-8200SeriesArm Cortex-A7dual-core1GHz IIoT gateways with built-in LTE Cat.4,1mini PCIe expansion slot for a Wi-Fi module,1CAN port,4DIs,4DOsFeatures and Benefits•Armv7Cortex-A7dual-core1GHz•ISASecure IEC62443-4-2Security Level2certified with Moxa IndustrialLinux3Secure•Moxa Industrial Linux with10-year superior long-term support•LTE-ready computer with Verizon/AT&T certification and industrial-grade CE/FCC/UL certifications•Dual-SIM slots•2auto-sensing10/100/1000Mbps Ethernet ports•Integrated LTE Cat.4module with US/EU/APAC band support•1CAN port supports CAN2.0A/B•microSD socket for storage expansion•-40to85°C wide temperature range and-40to70°C with LTE enabledCertificationsIntroductionThe UC-8200computing platform is designed for embedded data acquisition applications.The computer comes with dual RS-232/422/485serial ports,dual10/100/1000Mbps Ethernet ports,and one CAN port as well as dual Mini PCIe socket to support Wi-Fi/cellular modules.These versatile capabilities let users efficiently adapt the UC-8200to a variety of complex communications solutions.The UC-8200is built around a Cortex-A7dual core processor that has been optimized for use in energy monitoring systems,but is widely applicable to a variety of industrial solutions.With flexible interfacing options,this tiny embedded computer is a reliable and secure gateway for data acquisition and processing at field sites as well as a useful communications platform for many other large-scale deployments.Wide temperature LTE-enabled models are available for extended temperature applications.All units are thoroughly tested in a testing chamber, guaranteeing that the LTE-enabled computing platforms are suitable for wide-temperature applications.AppearanceUC-8210UC-8220SpecificationsComputerCPU Armv7Cortex-A7dual-core1GHzDRAM2GB DDR3LSupported OS Moxa Industrial Linux1(Debian9,kernel4.4),2027EOLMoxa Industrial Linux31(Debian11,kernel5.10),2031EOLSee /MILStorage Pre-installed8GB eMMCExpansion Slots MicroSD(SD3.0)socket x13OS is selectable via Moxa Computer Configuration System(CCS)for CTO models.For the model names,see the Ordering Information section of thedatasheet PDF file.Computer InterfaceEthernet Ports Auto-sensing10/100/1000Mbps ports(RJ45connector)x2 Serial Ports RS-232/422/485ports x2,software selectable(DB9male) CAN Ports CAN2.0A/B x1(DB9male)Digital Input DIs x4Digital Output DOs x4USB2.0USB2.0hosts x1,type-A connectorsWi-Fi Antenna Connector UC-8220Models:RP-SMA x2Cellular Antenna Connector UC-8220Models:SMA x2GPS Antenna Connector UC-8220Models:SMA x1Expansion Slots UC-8220-T-LX:mPCIe slot x2UC-8220-T-LX US/EU/AP Models:mPCIe slot x1SIM Format UC-8220Models:NanoNumber of SIMs UC-8220Models:2Buttons Programmable buttonTPM TPM v2.0Ethernet InterfaceMagnetic Isolation Protection 1.5kV(built-in)Security FunctionsHardware-based Security TPM2.0Hardware Root of Trust Secure BootIntrusion Detection Host-based Intrusion DetectionSecurity Tools Security Diagnostic ToolSecurity Event AuditingSecure UpdateDisk Protection LUKS Disk EncryptionRecovery One-step recovery to the last known secure stateDual-system design with automatic failbackReliability Network Keep AliveNetwork Failover and FailbackSerial InterfaceBaudrate300bps to921.6kbpsData Bits7,8Stop Bits1,2Parity None,Even,Odd,Space,MarkFlow Control RTS/CTS,XON/XOFFADDC(automatic data direction control)for RS-485RTS Toggle(RS-232only)Console Port1x4-pin header to DB9console portRS-232TxD,RxD,RTS,CTS,DTR,DSR,DCD,GNDRS-422Tx+,Tx-,Rx+,Rx-,GNDRS-485-2w Data+,Data-,GNDCAN InterfaceNo.of Ports1Connector DB9maleBaudrate10to1000kbpsIndustrial Protocols CAN2.0ACAN2.0BIsolation2kV(built-in)Signals CAN_H,CAN_L,CAN_GND,CAN_SHLD,CAN_V+,GNDDigital InputsConnector Screw-fastened Euroblock terminalDry Contact Off:openOn:short to GNDIsolation3K VDCSensor Type Wet contact(NPN)Dry contactWet Contact(DI to COM)On:10to30VDCOff:0to3VDCDigital OutputsConnector Screw-fastened Euroblock terminalCurrent Rating200mA per channelI/O Type SinkVoltage24VDC nominal,open collector to30VDCCellular InterfaceCellular Standards LTE Cat.4Band Options US Models:LTE Band2(1900MHz)/LTE Band4(1700MHz)/LTE Band5(850MHz)/LTE Band13(700MHz)/LTE Band17(700MHz)UMTS/HSPA850MHz/1900MHzCarrier Approval:Verizon,AT&TEU Models:LTE Band1(2100MHz)/LTE Band3(1800MHz)/LTE Band5(850MHz)/LTE Band7(2600MHz)/LTE Band8(900MHz)/LTE Band20(800MHz)UMTS/HSPA850MHz/900MHz/1900MHz/2100MHzAP Models:LTE Band1(2100MHz)/LTE Band3(1800MHz)/LTE Band5(850MHz)/LTE Band7(2600MHz)/LTE Band8(900MHz)/LTE Band28(700MHz)UMTS/HSPA850MHz/900MHz/1900MHz/2100MHzReceiver Types GPS/GLONASS/GalileoState-of-the-art GNSS solutionAccuracy Position:2.0m@CEP50Acquisition Hot starts:1.1secCold starts:29.94secSensitivity Cold starts:-145dBmTracking:-160dBmTime Pulse0.25Hz to10MHzLED IndicatorsSystem Power x2Programmable x1SIM card indicator x1Wireless Signal Strength Cellular/Wi-Fi x6Power ParametersNo.of Power Inputs Redundant dual inputsInput Voltage12to48VDCPower Consumption10WInput Current0.8A@12VDCReliabilityAlert Tools External RTC(real-time clock)Automatic Reboot Trigger External WDT(watchdog timer)Physical CharacteristicsDimensions UC-8220Models:141.5x120x39mm(5.7x4.72x1.54in)UC-8210Models:141.5x120x27mm(5.7x4.72x1.06in)141.5x120x27mm(5.7x4.72x1.06in)Weight UC-8210Models:560g(1.23lb)UC-8220Models:750g(1.65lb)Housing SECCMetalIP Rating IP30Installation DIN-rail mountingWall mounting(with optional kit)Environmental LimitsOperating Temperature-40to70°C(-40to158°F)Storage Temperature(package included)-40to85°C(-40to185°F)Ambient Relative Humidity5to95%(non-condensing)Shock IEC60068-2-27Vibration2Grms@IEC60068-2-64,random wave,5-500Hz,1hr per axis(without USB devicesattached)Standards and CertificationsEMC EN55032/35EN61000-6-2/-6-4EMI CISPR32,FCC Part15B Class AEMS IEC61000-4-2ESD:Contact:4kV;Air:8kVIEC61000-4-3RS:80MHz to1GHz:10V/mIEC61000-4-4EFT:Power:2kV;Signal:1kVIEC61000-4-6CS:10VIEC61000-4-8PFMFIEC61000-4-5Surge:Power:0.5kV;Signal:1kV Industrial Cybersecurity IEC62443-4-1IEC62443-4-2Hazardous Locations Class I Division2ATEXIECExCarrier Approvals VerizonAT&TSafety UL62368-1EN62368-1Green Product RoHS,CRoHS,WEEEMTBFTime UC-8210-T-LX-S:708,581hrsUC-8220-T-LX:650,836hrsUC-8220-T-LX-US-S/EU-S/AP-S:528,574hrs Standards Telcordia(Bellcore)Standard TR/SRWarrantyWarranty Period5yearsDetails See /warrantyPackage ContentsDevice1x UC-8200Series computerDocumentation1x quick installation guide1x warranty cardInstallation Kit1x DIN-rail kit(preinstalled)1x power jack6x M2.5mounting screws for the cellular module Cable1x console cableDimensions UC-8210UC-8220Ordering Information12UC-8210-T-LX-SDefault:MIL1(-Debian9),2027EOLOrder WithModel UC-8210-T-LX-S(CTO):MIL3(Debian11)Secure/Standard,2031EOLWith MIL3Secure1GHzDual CoreBuilt in––-40to85°CUC-8220-T-LXDefault:MIL1(-Debian9),2027EOLOrder WithModel UC-8220-T-LX(CTO):MIL3(Debian11)Secure/Standard,2031EOLWith MIL3Secure1GHzDual CoreBuilt in Reserved Reserved-40to70°CUC-8220-T-LX-US-SDefault:MIL1(-Debian9),2027EOLOrder WithModel UC-8220-T-LX-US-S(CTO):MIL3(Debian11)Secure/Standard,2031EOLWith MIL3Secure1GHzDual CoreBuilt inUS region LTEmodulepreinstalledReserved-40to70°CUC-8220-T-LX-EU-SDefault:MIL1(-Debian9),2027EOLOrder WithModel UC-8220-T-LX-EU-S(CTO):MIL3(Debian11)Secure/Standard,2031EOLWith MIL3Secure1GHzDual CoreBuilt inEurope regionLTE modulepreinstalledReserved-40to70°CUC-8220-T-LX-AP-SDefault:MIL1(-Debian9),2027EOLOrder WithModel UC-8220-T-LX-AP-S(CTO):MIL3(Debian11)Secure/Standard,2031EOLWith MIL3Secure1GHzDual CoreBuilt inAPAC regionLTE modulepreinstalledReserved-40to70°CUC-8210-T-LX-S(CTO)MIL3(Debian11)Secure orStandard,2031EOLWith MIL3Secure1GHzDual CoreBuilt in––-40to85°CUC-8220-T-LX(CTO)MIL3(Debian11)Secure orStandard,2031EOLWith MIL3Secure1GHzDual Core–Reserved Reserved-40to70°CUC-8220-T-LX-US-S (CTO)MIL3(Debian11)Secure orStandard,2031EOLWith MIL3Secure1GHzDual CoreBuilt inUS region LTEmodulepreinstalledReserved-40to70°C12UC-8220-T-LX-EU-S (CTO)MIL3(Debian11)Secure orStandard,2031EOLWith MIL3Secure1GHzDual CoreBuilt inEurope regionLTE modulepreinstalledReserved-40to70°CUC-8220-T-LX-AP-S (CTO)MIL3(Debian11)Secure orStandard,2031EOLWith MIL3Secure1GHzDual CoreBuilt inAPAC regionLTE modulepreinstalledReserved-40to70°CAccessories(sold separately)Power AdaptersPWR-12150-EU-SA-T Locking barrel plug,12VDC,1.5A,100to240VAC,EU plug,-40to75°C operating temperature PWR-12150-UK-SA-T Locking barrel plug,12VDC,1.5A,100to240VAC,UK plug,-40to75°C operating temperature PWR-12150-USJP-SA-T Locking barrel plug,12VDC1.5A,100to240VAC,US/JP plug,-40to75°C operating temperature PWR-12150-AU-SA-T Locking barrel plug,12VDC,1.5A,100to240VAC,AU plug,-40to75°C operating temperature PWR-12150-CN-SA-T Locking barrel plug,12VDC,1.5A,100to240VAC,CN plug,-40to75°C operating temperature Power WiringCBL-PJTB-10Non-locking barrel plug to bare-wire cableCablesCBL-F9DPF1x4-BK-100Console cable with4-pin connector,1mWi-Fi Wireless ModulesUC-8200-WLAN22-AC Wireless package for UC-8200V2.0or later with Wi-Fi module,2screws,2spacers,1heat sink,1pad AntennasANT-LTEUS-ASM-01GSM/GPRS/EDGE/UMTS/HSPA/LTE,1dBi,omnidirectional rubber-duck antennaANT-LTE-ASM-04BK704to960/1710to2620MHz,LTE omnidirectional stick antenna,4.5dBiANT-LTE-OSM-03-3m BK700-2700MHz,multiband antenna,specifically designed for2G,3G,and4G applications,3m cable ANT-LTE-ASM-05BK704-960/1710-2620MHz,LTE stick antenna,5dBiANT-LTE-OSM-06-3m BK MIMO Multiband antenna with screw-fastened mounting option for700-2700/2400-2500/5150-5850MHzfrequenciesANT-WDB-ARM-02022dBi at2.4GHz or2dBi at5GHz,RP-SMA(male),dual-band,omnidirectional antennaDIN-Rail Mounting KitsUC-8210DIN-rail Mounting Kit DIN-rail mounting kit for UC-8210with4M3screwsUC-8220DIN-rail Mounting Kit DIN-rail mounting kit for UC-8220with4M3screwsWall-Mounting KitsUC-8200Wall-mounting Kit Wall-mounting kit for UC-8200with4M3screws©Moxa Inc.All rights reserved.Updated Jul18,2023.This document and any portion thereof may not be reproduced or used in any manner whatsoever without the express written permission of Moxa Inc.Product specifications subject to change without notice.Visit our website for the most up-to-date product information.。
Intercore2duo处理器列表大全
桌面型处理器[编辑] Core 2 Duo[编辑] Allendale (65 nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，EIST，XD bit，Intel 64，iAMT2型号时钟(MHz)L2缓存(KB)总线(MT/s)倍频(X)电压(V)功耗(W)脚座发行日代码E4300 1800 2048 800 9 1.5 65 LGA7752007年1月27日BX80557E4300E4400 2000 2048 800 10 1.5 65 LGA7752007年4月22日BX80557E4400E4500 2200 2048 800 11 1.5 65 LGA7752007年7月22日BX80557E4500E4600 2400 2048 800 12 1.5 65 LGA7752007年10月21日BX80557E4600E4700 2600 2048 800 13 1.5 65 LGA7752008年3月2日BX80557E4700[编辑] Conroe 1 (65 nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，EIST，XD bit，Intel 64，iAMT2，Intel VT，Intel TXT型号时钟(MHz)L2缓存(KB)总线(MT/s)倍频(X)电压(V)功耗(W)脚座发行日代码E6300 1866 2048 1066 7 1.35 65 LGA7752006年7月27日BX80557E630E6320 1866 4096 1066 7 1.35 65 LGA7752007年4月22日BX80557E632E6400 2133 2048 1066 8 1.35 65 LGA7752006年7月27日BX80557E640E6420 2133 4096 1066 8 1.35 65 LGA7752007年4月22日BX80557E642E6600 2400 4096 1066 9 1.35 65 LGA7752006年7月27日BX80557E660E6700 2666 4096 1066 10 1.35 65 LGA7752006年7月27日BX80557E670[编辑] Conroe 2 (65 nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，EIST，XD bit，Intel 64，iAMT2，Intel VT，Intel TXT型号时钟(MHz)L2缓存(KB)总线(MT/s)倍频(X)电压(V)功耗(W)脚座发行日代码E6540 2333 4096 1333 7 1.35 65 LGA7752007年7月22日BX80557E654E6550 2333 4096 1333 7 1.35 65 LGA7752007年7月22日BX80557E655E6750 2666 4096 1333 8 1.35 65 LGA7752007年7月22日BX80557E675E6850 3000 4096 1333 9 1.35 65 LGA7752007年7月22日BX80557E685[编辑] Wolfdale 1 (45nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，SSE4.1，EIST，XD bit，Intel 64，iAMT2型号时钟(MHz)L2缓存(KB)总线(MT/s)倍频(X)电压(V)功耗(W)脚座发行日代码E7200 2533 3072 1066 9.5 1.36 65 LGA7752008年5月11日BX80571E720E7300 2666 3072 1066 10 1.36 65 LGA7752008年5月11日BX80571E730E7400 2800 3072 1066 10.5 1.36 65 LGA7752008年10月19日BX80571E740E7500 2933 3072 1066 11 1.36 65 LGA7752009年1月18日BX80571E750E7600 3066 3072 1066 11.5 1.36 65 LGA7752009年5月31日BX80571E760[编辑] Wolfdale 2 (45nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，SSE4.1，EIST，XD bit，Intel 64，iAMT2，Intel VT，Intel TXT型号时钟(MHz)L2缓存(KB)总线(MT/s)倍频(X)电压(V)功耗(W)脚座发行日代码E8190 2666 6144 1333 8 1.36 65 LGA7752008年1月20日BX80570E819E8200 2666 6144 1333 8 1.36 65 LGA7752008年1月20日BX80570E820E8300 2830 6144 1333 8.5 1.36 65 LGA7752008年5月11日BX80570E830E8400 3000 6144 1333 9 1.36 65 LGA7752008年1月20日BX80570E840E8500 3160 6144 1333 9.5 1.36 65 LGA7752008年1月20日BX80570E850E8600 3333 6144 1333 10 1.36 65 LGA7752008年8月20日BX80570E860[编辑] Core 2 Quad[编辑] Kentsfield (65 nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，EIST, Intel 64，XD bit，iAMT2 , Intel VT，Intel TXT型号sSpecNumber时钟(MHz)L2缓存(KB)总线(MT/s)倍频(X)电压(V)功耗(W)脚座发行日Box代码 Part NumberQ6400 2133 4096 ×21066 8 1.35 100LGA7752007年1月7日BX80562Q6400无正式版与至强X3210相同Q6600 SL9UM(B3)SLACR(G0)24004096 ×21066 9 1.3510095LGA7752007年1月7日2007年7月20日BX80562Q6600HH80562PH0568MQ6700 SLACQ(G0)26664096 ×21066 10 1.35 95LGA7752007年7月20日BX80562Q6700HH80562PH0678MK[编辑] Yorkfield 1 (45nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，SSE4.1，EIST, Intel 64，XD bit，iAMT2型号时钟(MHz)L2缓存(KB)总线(MT/s)倍频(X)电压(V)功耗(W)脚座发行日BOX代码Q8200 2333 2048 × 2 1333 7 1.36 95 LGA7752008年8月31日BX80580Q820Q8300 2500 2048 × 2 1333 7.5 1.36 95 LGA7752008年11月30日BX80580Q830Q8400 2666 2048 × 2 1333 8 1.36 95 LGA7752009年4月19日BX80580Q840Q9300 2500 3072 × 2 1333 7.5 1.36 95 LGA7752008年3月10日BX80580Q930Q9400 2666 3072 × 2 1333 8 1.36 95 LGA7752009年8月31日BX80580Q940Q9505 2833 3072 × 2 1333 8.5 1.36 95 LGA7752008年8月18日BX80580Q9505[编辑] Yorkfield 2 (45nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，SSE4.1，EIST, Intel 64，XD bit，iAMT2，Intel VT，Intel TXT型号时钟(MHz)L2缓存(KB)总线(MT/s)倍频(X)电压(V)功耗(W)脚座发行日代码Q9450 2666 6144 × 2 1333 8 1.36 95 LGA7752008年3月25日BX80569Q945Q9550 2833 6144 × 2 1333 8.5 1.36 95 LGA7752008年3月25日BX80569Q955Q9650 3000 6144 × 2 1333 9 1.36 95 LGA7752008年8月10日BX80569Q965[编辑] Core 2 Extreme[编辑] Conroe XE (65 nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，EIST，XD bit，Intel 64，Intel VT ▪未锁倍频型号时钟（MHz）L2缓存（KB）前端总线倍频（倍）电压（V）TDP(W)插座发行日Part Number(s)X6800 2933 4096 1066MT/s111.35Vmax75LGA7752006年7月23日BX80557X6800[编辑] Kentsfield XE(65 nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，Enhanced Intel SpeedStep Technology (EIST), Intel 64，XD bit，Intel VT▪未锁倍频型号时钟（MHz）L2缓存（KB）前端总线倍频（倍）电压（V）TDP(W)插座发行日Part Number(s)QX6700 2666 4096 × 2 1066MT/s101.35Vmax130WLGA7752006年11月BX805620X6700SL9ULQX6800 2933 4096 × 2 1066MT/s111.35Vmax130WLGA775QX6850 3000 4096 × 2 1333MT/s91.35Vmax130WLGA7752007年7月BX80562QX6850[编辑] Yorkfield (45 nm)▪指令集：MMX，SSE，SSE2，SSE3，SSSE3，SSE4.1，Enhanced Intel SpeedStep Technology (EIST), Intel 64，XD bit，Intel VT▪未锁倍频型号时钟（MHz）L2缓存（KB）前端总线倍频（倍）电压（V）TDP(W)插座发行日Part Number(s)QX9650 3000 6144 × 2 1333MT/s90.85–1.3625130LGA7752007年11月11日EU80569XJ080NLQX9770 3200 6144 × 2 1600 0.85–1.136 LGA 2008年3月EU80569XL088NLMT/s 3625 77524日QX9775 3200 6144 × 2 1600MT/s8 1.212 150LGA7712008年3月24日EU80574XL088N[编辑] 笔记本（移动）处理器[编辑] Core 2 Duo[编辑] Merom（标准电压，65nm）指令集：MMX，SSE，SSE2，SSE3，SSSE3，EIST，XD bit，Intel VT型号频率（MHz）L2缓存（KB）前端总线倍频（倍）电压（V）TDP(W)插座发行日Part Number(s)T5200 1600 2048 533MT/s121.075-1.250V34Socket M2006年10月LF80537GE0251MT5250 1500 2048 667MT/s91.075V-1.175V35Socket MLF80537GE0251MT5270 1400 2048 800MT/s71.075V-1.175V35Socket PLF80537GG0172MT5300 1733 2048 533MT/s13 34Socket MLF80537GE0302MT5450 1666 2048 667MT/s101.075V-1.175V35Socket MLF80537GF0282MTT5470 1600 2048 800MT/s81.075V-1.175V35Socket PLF80537GG0252MT5500 1666 2048 667MT/s101.0375-1.30V34Socket M2006年7月27日LF80537GF0282MT5550 1833 2048 667MT/s111.075V-1.175V35Socket MLF80537GF0342MTT5600 1833 2048 667MT/s111.0375-1.30V34Socket M2006年7月27日LF80537GF0342MT5670 1800 2048 800MT/s91.075V-1.175V36Socket P2006年7月27日LF80537GG0332MNT5750 2000 2048 667MT/s121.075V-1.175V35Socket MLF80537GF0412MT5800 2000 2048 800MT/s101.075V-1.175V35Socket PLF80537GG041FT5850 2166 2048 667MT/s131.075V-1.175V35Socket MLF80537GF0482MT5870 2000 2048 800MT/s101.075V-1.175V35Socket PLF80537GG0412MNT5900 2200 2048 800MT/s111.075V-1.175V35Socket PLF80537GG049FT7100 1800 2048 800MT/s9 34Socket PLF80537GG0332MT7200 2000 4096 667MT/s12 34Socket M2006年7月27日LF80537GF0414MT7250 2000 2048 800MT/s10 35Socket PLF80537GG0412MT7300 2000 4096 800MT/s9 35Socket P2007年5月9日LF80537GG0414MT7400 2166 4096 667MT/s13 34Socket M2006年7月27日LF80537GF0484MT7500 2200 4096 800MT/s11 35Socket P2007年5月9日LF80537GG0494MT7600 2333 4096 667MT/s14 34Socket M2006年7月27日LF80537GF0534MT7700 2400 4096 800MT/s12 35Socket P2007年5月9日LF80537GG0564MT7800 2600 4096 800MT/s13 35Socket P2007年9月2日LF80537GG0644ML[编辑] Penryn（标准电压，45nm）指令集：MMX，SSE，SSE2，SSE3，SSSE3，SSE4.1，EIST，XD bit，Intel VT型号频率（MHz）L2缓存（KB）前端总线倍频（倍）电压（V）TDP(W)插座发行日Part Number(s)T8100 2100 3072 800MT/s10.51.00-1.25035SocketPFF80576GG0453MT8300 2400 3072 800MT/s121.00-1.25035SocketPEC80576GG0563MT9300 2500 6144 800MT/s12.51.00-1.25035SocketPEC80576GG0606MT9400 2530 6144 1066MT/s9.5 35SocketPT9500 2600 6144 800MT/s131.00-1.25035SocketPEC80576GG0646MT9600 2800 6144 1066MT/s10.5 35SocketM[编辑] Penryn (medium-voltage, 45 nm)指令集：MMX，SSE，SSE2，SSE3，SSSE3，SSE4.1，EIST，XD bit，Intel VT型号sSpecNumber频率(MHz)L1缓存(KB)L2缓存(KB)L3缓存(KB)前端总线倍频（倍）电压(V)TDP(W)插座发行日PartNumber(s)发行时价格（USD）P7350 SLB53 2000MHz3072KiB1066MT/s7.5x1.00V-1.250V25WSocket PMid2008AW80577SH0413MOEMP7370 SLGF9 2000MHz323072KiB1066MT/s7.5x1.00V-1.250V25WSocket PNov2008AW80577SH0413MLP7450 SLB542133MHz3072KiB1066MT/s7.5x1.050V-1.150V25WSocket P Nov2009AW80577SH0463MSLB56uFCPGA8AW80577SH0463MP7550 SLGF8 2266MHz323072KiB1066MT/s7.5x1.00V-1.250V25WSocket PJan2010AW80577SH0513MAP7570 SLGLW 2266MHz323072KiB1066MT/s7.5x1.00V-1.250V25WSocket PJan2009AW80577SH0513MLP8400 SLB3R2266MHz3072KiB1066MT/s8.5x1.00V-1.250V25WSocket PJune13,2008[1]AW80577SH0513M$209 SLB4MFCBGA6AV80577SH0513MP8600 SLB3S2400MHz3072KiB1066MT/s9x1.00V-1.250V25WSocket PJune13,2008[2]AW80577SH0563M$241 SLB4NFCBGA6AV80577SH0563MP8700 SLGFE2533MHz3072KiB1066MT/s9.5x1.00V-1.250V25WPGA478AW80577SH0613MG$209.00 SLGFGBGA479AV80577SH0613MGP8800 SLGLR2660MHz3072KiB1066MT/s9.5x1.00V-1.250V25WPGA478BX80577P8800$241.00 SLGLRPGA478AW80577SH0673MGSLGLABGA479AV80577SH0673MGP9500 SLB4E 2533MHz6144KiB1066MT/s9.5x1.050V-1.162V25WSocket PJuly142008AW80576SH0616M$348P9600 SLGE6 2660MHz6144KiB1066MT/s9.5x1.050V-1.212V25WPGA478Nov2008AW80576SH0676MG$348P9700 SLGQS 2800MHz6144KiB1066MT/s9.5x1.012V-1.175V28WPGA478July2009AW80576SH0726MG$348SP9300 SLB63 2266MHz6144KiB1066MT/s8.5x1.050-1.150V25WFCBGA6July2008AV80576SH0516M$284SP9400 SLB64 2400MHz6144KiB1066MT/s9x1.050-1.150V25WFCBGA6July2008AV80576SH0566M$316SP9600 SLGER 2533MHz6144KiB1066MT/s9.5x1.050-1.150V25WBGA956Jan2009AV80576SH0616M$316AV80576SH0516M[编辑] Penryn（低电压，45nm）指令集：MMX，SSE，SSE2，SSE3，SSSE3，SSE4.1，EIST，XD bit，Intel VT型号sSpecNumber频率(MHz)L2缓存(KB)前端总线倍频（倍）电压(V)TDP(W)插座发行日PartNumber(s)发行时价格（USD）SL9300 SLB66 1600MHz6144KiB1066MT/s6x1.050 -1.150 V17 WFCBGA6September 2008AV80576LH0366M$284SL9400 SLB65 1866MHz6144KiB1066MT/s7x1.050 -1.150 V17 WFCBGA6September 2008AV80576LH0256M$316[编辑] Penryn-3M （超低电压，45nm ）▪指令集：MMX ，SSE ，SSE2，SSE3，SSSE3，SSE4.1，EIST ，XD bit ，Intel VT型号sSpec Number频率(MHz )L2缓存(KB)前端总线 倍频（倍） 电压(V) TDP (W) 插座发行日 PartNumber(s)发行时价格（USD ）Core 2Duo SU7300SLGS6 1300 MHz 3072 KiB 800 MT/s 6.5x 1.050- 1.150 V10 W FCB GA6 September 2008AV80577UG0133M$289Core 2Duo SU7800SLGS5 1400 MHz 3072 KiB 800MT/s7x1.050- 1.150 V 10 W FCB GA6 Septem ber 2008AV80577UG0173M$289Core 2 Duo SU9300 SLB5Q 1200 MHz 3072 KiB 800MT/s6x1.050- 1.150 V 10 W FCB GA6 September 2008AV80577UG0093M$262Core 2Duo SU9400SLB5V 1400 MHz 3072 KiB 800MT/s7x1.050 -1.150 V 10 W FCB GA6 Septem ber 2008AV80577UG0173M$289Core 2 Duo SU9600 SLGEX 1600 MHz 3072 KiB 800MT/s8x1.050- 1.150 V10 W FCB GA6 Quarter 1 2009AV80577UG0253M$289[编辑] Core 2 Quad （标准电压，45nm ）▪指令集：MMX ，SSE ，SSE2，SSE3，SSSE3，SSE4.1，Enhanced Intel SpeedStep Technology (EIST), Intel 64，XD bit ，iAMT2 (Intel Active Management), Intel VT ，Intel TXT型号SPEC Code 频率（MHz ） L2缓存（KB ） 前端总线 倍频（倍） 电压（V ） TDP(W) 插座 发行日 PartNumber(s)首发价格(USD) Q9000SLGEJ 200061441066 MT/s8.61.050-1.1745Sock et P 2008$348.005Q9100 SLB5G 2260 6144 x2 1066MT/s8.61.050-1.17545Socket P2008AW80581GH051003$851.00Q9200 2400 6144 x2 1066MT/s9Socket P[编辑] Core 2 Extreme指令集：MMX，SSE，SSE2，SSE3，SSSE3，SSE4.1，Enhanced Intel SpeedStep Technology (EIST), Intel 64，XD bit，iAMT2 (Intel Active Management), Intel VT，Intel TXT型号SPECCode频率（MHz）L2缓存（KB）前端总线倍频（倍）电压（V）TDP(W)插座发行日PartNumber(s)首发价格（USD）X7800 SLA6Z 2660 4096 800MT/s13 44Socket PLF80537GG0644MX7900 2800 4096 800MT/s141.100-1.37544Socket P$827.00X9000 2800 6144 800MT/s141.000-1.27544Socket PFF80576ZG0726M$851.00X9100 3060 6144 1066MT/s12 44Socket PAW80576ZH0836M$851.00QX9300 SLB5J 2530 6144 x2 1066MT/s9.41.050-1.17545Socket PAW80581ZH061003$1038.00。
HPMLDL系列服务器
HPMLDL系列服务器hpML系列服务器HP ProLiant ML110G7(C8R00A)参数规格差不多参数产品类型工作组级产品类别塔式产品结构4U处理器CPU类型奔腾双核CPU型号奔腾双核G860CPU频率3GHzHP ProLiant ML330 G6(600911-AA1)参数规格差不多参数产品类型企业级产品类别塔式产品结构5U处理器CPU类型Intel 至强5600CPU型号Xeon E5620CPU频率 2.4GHz智能加速主2.666GHz频标配CPU1颗数量最大CPU2颗数量制程工艺32nm三级缓存12MB总线规格QPI 5.86GT/sCPU核心四核HP ProLiant ML330 G6(B9D22A)参数规格差不多参数产品类型企业级产品类别塔式产品结构5U处理器CPU类型Intel 至强5600 CPU型号Xeon E5606CPU频率 2.13GHz标配CPU1颗数量最大CPU2颗数量制程工艺32nm三级缓存8MB总线规格QPI 4.8GT/sHP ProLiant ML330 G6(600911-AA1)参数规格差不多参数产品类型企业级产品类别塔式产品结构5U处理器CPU类型Intel 至强5600CPU型号Xeon E5620CPU频率 2.4GHz智能加速主2.666GHz频标配CPU1颗数量最大CPU2颗数量制程工艺32nm三级缓存12MB总线规格QPI 5.86GT/sCPU核心四核HP ProLiant ML350 G6(638180-AA1)参数规格差不多参数产品类别塔式产品结构5U处理器CPU类型Intel 至强5600CPU型号Xeon E5606CPU频率 2.13GHz标配CPU1颗数量最大CPU2颗数量制程工艺32nm三级缓存8MB总线规格QPI 4.8GT/sCPU核心四核CPU线程四线程数主板HP ProLiant ML350 G6(600431-AA5)参数规格差不多参数产品类别塔式产品结构5U处理器CPU类型Intel 至强5600CPU型号Xeon E5620CPU频率 2.4GHz智能加速主2.666GHz频标配CPU1颗数量最大CPU2颗数量制程工艺32nm三级缓存12MB总线规格QPI 5.86GT/sCPU核心四核CPU线程八线程数HP ProLiant ML350 G6(594869-AA1)参数规格差不多参数产品类别塔式产品结构5U处理器CPU类型Intel 至强5600CPU型号Xeon E5620CPU频率 2.4GHz智能加速主2.666GHz频标配CPU1颗数量最大CPU2颗数量制程工艺32nm三级缓存12MB总线规格QPI 5.86GT/sCPU核心四核CPU线程八线程数HP ProLiant ML310e Gen8(686146-AA5)参数规格差不多参数产品类型企业级产品类别塔式产品结构4U处理器CPU类型Intel 至强E3-1200 v2 CPU型号Xeon E3-1220 v2CPU频率 3.1GHz标配CPU1颗数量最大CPU4颗数量制程工艺22nm三级缓存8MB总线规格DMI 5GT/sHP ProLiant ML310e Gen8(686147-AA5)参数规格差不多参数产品类型企业级产品类别塔式产品结构4U处理器CPU类型Intel 至强E3-1200 v2 CPU型号Xeon E3-1240 v2CPU频率 3.4GHz智能加速主3.8GHz频标配CPU1颗数量最大CPU4颗数量制程工艺22nm三级缓存8MBHP ProLiant ML350e Gen8(C3Q10A)参数规格差不多参数产品类型企业级产品类别塔式产品结构5U处理器CPU类型Intel 至强E5-2400 CPU型号Xeon E5-2403CPU频率 1.8GHz标配CPU1颗数量最大CPU4颗数量制程工艺32nm三级缓存10MB总线规格QPI 6.4GT/sHP ProLiant ML350e Gen8(C3Q08A)参数规格差不多参数产品类型企业级产品类别塔式产品结构5U处理器CPU类型Intel 至强E5-2400 CPU型号Xeon E5-2407CPU频率 2.2GHz标配CPU1颗数量最大CPU4颗数量制程工艺32nm三级缓存10MB总线规格QPI 6.4GT/sHP ProLiant ML350e Gen8(C3Q09A)参数规格差不多参数产品类型企业级产品类别塔式产品结构5U处理器CPU类型Intel 至强E5-2400 CPU型号Xeon E5-2420CPU频率 1.9GHz标配CPU1颗数量最大CPU4颗数量制程工艺32nm三级缓存15MB总线规格QPI 6.4GT/sHP ProLiant ML350e Gen8(C3F91A)参数规格差不多参数产品类型企业级产品类别塔式产品结构5U处理器CPU类型Intel 至强E5-2400 CPU型号Xeon E5-2430CPU频率 2.2GHz标配CPU1颗数量最大CPU4颗数量制程工艺32nm三级缓存15MB总线规格QPI 6.4GT/sHP ProLiant ML350p Gen8(646675-AA1)参数规格差不多参数产品类别塔式产品结构5U处理器CPU类型Intel 至强E5-2600 CPU型号Xeon E5-2609CPU频率 2.4GHz标配CPU1颗数量最大CPU2颗数量制程工艺32nm三级缓存10MB总线规格QPI 6.4GT/sHP ProLiant ML350p Gen8(668271-AA5)参数规格差不多参数产品类别塔式产品结构5U处理器CPU类型Intel 至强E5-2600 CPU型号Xeon E5-2620CPU频率2GHz智能加速主2.5GHz频标配CPU1颗数量最大CPU2颗数量制程工艺32nm。
华硕F550V电脑配置信息–电脑管家检测结果
华硕F550V电脑配置信息–电脑管家检测结果----------------------------------以下信息由电脑管家提供导出时间：2014-11-7 23:43:37----------------------------------电脑概览电脑型号华硕 X550VB操作系统 Microsoft Windows 8 中文版 (64位)CPU (英特尔)Intel(R) Core(TM) i5-3230M CPU @ 2.60GHz(2601 MHz)主板华硕 X550VB内存 4.00 GB ( 1600 MHz)主硬盘 500 GB ( TMA55DTF138W 已使用时间: 1861小时)显卡 NVIDIA GeForce GT 740M显示器三星 SAMSUNG 32位真彩色 60Hz声卡 Realtek High Definition Audio网卡 Qualcomm Atheros AR9485 Wireless Network Adapter ---------------------------------------------------------------------------------------------------------------------------- CPU详情CPU厂商 GenuineIntelCPU (英特尔)Intel(R)Core(TM)*******************CPU核心数 4CPU默认频率 2601 MHzCPU外频 100 MHzCPU当前频率 2601 MHz二级缓存 512 KB三级缓存 3072 KBCPU序列号 BFEBFBFF000306A9数据宽度 64bit指令集 MMX,SSE,SSE2,SSE3,SSSE3,SSE4.1,SSE4.2,EM64T扩展版本 Ext.Family 0 Ext.Model 3---------------------------------------------------------------------------------------------------------------------------- 主板详情制造商华硕主板型号 X550VB制造日期 2013/05/20主板序列号 D7N0CV64599330ABIOS厂商 American Megatrends Inc.BIOS版本 _ASUS_ - 1072009 X550VB.210BIOS大小 0 Bytes芯片组英特尔 3rd Gen Core processor DRAM Controller电脑厂商华硕电脑型号 X550VB系统安装日期 2013/12/12最近启动时间 2014/11/07---------------------------------------------------------------------------------------------------------------------------- 内存详情内存名称 1600 MHz内存大小 4 GB内存频率 1600 MHz插槽 ChannelA-DIMM0数据宽度 64bit---------------------------------------------------------------------------------------------------------------------------- 显卡1详情显卡名称 Intel(R) HD Graphics 4000显卡厂商英特尔显存大小 1798 MB内核名称 Intel(R) HD Graphics Family显卡2详情显卡名称 NVIDIA GeForce GT 740M显卡厂商英伟达显存大小 2048 MB内核名称 GeForce GT 740M---------------------------------------------------------------------------------------------------------------------------- 显示器详情显示器厂商三星显示器名称 SAMSUNG显示器代号 SEC334a屏幕尺寸 15.3 英寸 (34厘米X19厘米)屏幕比例 16:9当前分辨率 1366 * 768 (32位真彩色@60Hz)最大分辨率 1366 * 768制造时间 2011/1---------------------------------------------------------------------------------------------------------------------------- 硬盘详情硬盘名称 HGST HTS545050A7E680硬盘大小 500 GB硬盘缓存 8 MB硬盘已使用时间 1861小时 (S.M.A.R.T.)硬盘序列号 HGST HTS545050A7E680 (BIOS 版本: GG2OAF)---------------------------------------------------------------------------------------------------------------------------- 声卡1详情声卡名称 Realtek High Definition Audio声卡厂商瑞昱UAA总线名称 7 Series Chipset Family High Definition Audio Controller声卡2详情声卡名称英特尔(R) 显示器音频声卡厂商英特尔UAA总线名称 7 Series Chipset Family High Definition Audio Controller---------------------------------------------------------------------------------------------------------------------------- 网卡1详情网卡名称Qualcomm Atheros AR9485 Wireless Network Adapter网卡厂商创锐讯Mac地址 6C:71:D9:80:AF:2E网卡2详情网卡名称 Realtek PCIe GBE Family Controller网卡厂商瑞昱Mac地址 AC:22:0B:AC:0D:BD---------------------------------------------------------------------------------------------------------------------------- 键盘详情名称增强型(101 或 102 键)制造商 GreenAsia Inc.类型 USB Input Device---------------------------------------------------------------------------------------------------------------------------- 鼠标详情---------------------------------------------------------------------------------------------------------------------------- 其它硬件详情制造商群光名称 USB Composite Device----------------------------------------------------------------------------------------------------------------------------。
技嘉主板支持CPU列表
GA-8I945PLGE-RH CPU支持列表主板型号GA-8I945PLGE-RH PCB 版本1.xCPU 广商CPU 型号外频800Intel Core™ 2 Extreme QX9770(C1,Yorkfield,45nm,3.2GHz,12 MB) 1600 - Intel Core™ 2 Extreme QX9770(C0,Yorkfield,45nm,3.2GHz,12 MB) 1600 - Intel Core™ 2 Extreme QX9650(C1,Yo rkfield,45nm,3GHz,12 MB) 1333 - Intel Core™ 2 Extreme QX9650(C0,Yorkfield,45nm,3GHz,12 MB) 1333 - Intel Core™ 2 Quad Q9650(E0,Yorkfield,45nm,3.0 GHz,12MB) 1333 - Intel Core™ 2 Quad Q9550(E0,Yorkfield,45nm,2.83GHz,12MB) 1333 - Intel Core™ 2 Quad Q9550(C1,Yorkfield,45nm,2.83GHz,12MB) 1333 - Intel Core™ 2 Quad Q9450(C1,Yorkfield,45nm,2.66GHz,12MB) 1333 - Intel Core™ 2 Quad Q9400(R0,Yorkfield,45nm,2.66GHz,6MB) 1333 -Intel Core™ 2 Quad Q9300(M1,Yorkfield,45nm,2.50GHz,6MB) 1333 -Intel Core™ 2 Qu ad Q8200(M1,Yorkfield,45nm,2.33GHz,4MB) 1333 -Intel Core™ 2 Duo E8600(E0,Wolfdale,45nm,3.33GHz,6MB) 1333 -Intel Core™ 2 Duo E8500(C0,Wolfdale,45nm,3.16GHz,6MB) 1333 -Intel Core™ 2 Duo E8500(E0,Wolfdale,45nm,3.16GHz,6MB) 1333 -Intel Core™ 2 Duo E8400(C0,Wolfdale,45nm,3GHz,6MB) 1333 -Intel Core™ 2 Duo E8400(E0,Wolfdale,45nm,3GHz,6MB) 1333 -Intel Core™ 2 Duo E8300(C0,Wolfdale,45nm,2.83GHz,6MB) 1333 -Intel Core™ 2 Duo E8200(C0,Wolfdale,45nm,2.66GHz,6MB) 1333 -Intel Core™ 2 Duo E8190(C0,W olfdale,45nm,2.66GHz,6MB) 1333 -Intel Core™ 2 Extreme QX6850(G0,Kentsfield,65nm,3GHz,8MB) 1333 - Intel Core™ 2 Extreme QX6800(G0,Kentsfield,65nm,2.93GHz,8MB) 1066 - Intel Core™ 2 Extreme QX6700(B3,Kentsfield,65nm,2.66GHz,8MB) 1066 - Intel Core™ 2 Extreme X6800(B2,Conroe XE,65nm,2.93GHz,4MB) 1066 - Intel Core™ 2 Quad Q6700(G0,Kentsfield,65nm,2.66GHz,8MB) 1066 - Intel Core™ 2 Quad Q6600(G0,Kentsfield,65nm,2.40HGz,8MB) 1066 - Intel Core™ 2 Quad Q6600(B3,Kentsfield,65nm,2.40GHz,8MB) 1066 - Intel Core™ 2 Duo E7500(M0,Wolfdale,45nm,2.93GHz,3MB) 1066 -Intel Core™ 2 Duo E7400(R0,Wolfdale,45nm,2.8GHz,3MB) 1066 -Intel Core™ 2 Duo E7300(M0,Wolfdale,45nm,2.66GHz,3MB) 1066 -Intel Core™ 2 Duo E7200(M0,Wolfdale,45nm,2.53GHz,3MB) 1066 -Intel Cor e™ 2 Duo E6850(G0,Conroe,65nm,3GHz,4MB) 1333 -Intel Core™ 2 Duo E6750(G0,Conroe,65nm,2.66GHz,4MB) 1333 -Intel Core™ 2 Duo E6700(B2,Conroe,65nm,2.66GHz,4MB) 1066 -Intel Core™ 2 Duo E6600(B2,Conroe,65nm,2.40GHz,4MB) 1066 -Intel Core™ 2 Duo E6550(G0,Conroe,65nm,2.33GHz,4MB) 1333 -Intel Core™ 2 Duo E6540(G0,Conroe,65nm,2.33GHz,4MB) 1333 -Intel Core™ 2 Duo E6420(B2,Conroe,65nm,2.13GHz,4MB) 1066 -Intel Core™ 2 Duo E6400(L2,Conroe,65nm,2.13GHz,2MB) 1066 -Intel Core™ 2 Duo E6400(B2,Conroe,65nm,2.13GHz,2MB) 1066 -Intel Core™ 2 Duo E6320(B2,Conroe,65nm,1.86GHz,4MB) 1066 -Intel Core™ 2 Duo E6300(L2,Conroe,65nm,1.86GHz,2MB) 1066 -Intel Core™ 2 Duo E6300(B2,Conroe,65nm,1.86GHz,2MB) 1066 -Intel Core™ 2 Duo E4700(G0,Conroe,65nm,2.60GHz,2MB) 800 -Intel Core™ 2 Duo E4600(M0,Conroe,65nm,2.40GH,2MB) 800 -Intel Core™ 2 Duo E4500(M0,Conroe,65nm,2.20GHz,2MB) 800 -Intel Core™ 2 Duo E4400(M0,Conroe,65nm,2GHz,2MB) 800 -Intel Core™ 2 Duo E4400(L2,Conroe,65nm,2GHz,2MB) 800 -Intel Core™ 2 Duo E4300(L2,Conroe,65nm,1.80GHz,2MB) 800 -Intel Pentium Dual-Core E5200(M0,Wolfdale,45nm,2.50GHz,2MB) 800 -Intel Pentium Dual-Core E2220(M0,Conroe,65nm,2.40GHz,1MB) 800 -Intel Pentium Dual-Core E2200(M0,Conroe,65nm,2.2GHz,1MB) 800 -Intel Pentium Dual-Core E2180(M0,Conroe,65nm,2.0GHz,1MB) 800 -Intel Pentium Dual-Core E2160(M0,Conroe,65nm,1.8GHz,1MB) 800 -Intel Pentium Dual-Core E2160(L2,Conroe,65nm,1.8GHz,1MB) 800 -Intel Pentium Dual-Core E2140(M0,Conroe,65nm,1.6GHz,1MB) 800 -Intel Pentium Dual-Core E2140(L2,Conroe,65nm,1.6GHz,1MB) 800 -Intel Celeron Dual-Core E1400(M0,Conroe,65nm,2.0GHz,512KB) 800 -Intel Celeron Dual-Core E1200(M0,Conroe,65nm,1.60GHz,512KB) 800 -Intel Pentium Extreme Edition 965(C1,Presler,65nm,3.73GHz,4MB) 1066 -Intel Pentium Extreme Edition 955(B1,Presler,65nm,3.46GHz,4MB (2x2)) 1066 - Intel Pentium Extreme Edition 840-XE(A0,Smithfield,90nm,3.20GHz,2MB) 800 - Intel Pentium D 960(D0,Presler,65nm,3.60GHz,4MB) 800 -Intel Pentium D 960(C1,Presler,65nm,3.60GHz,4MB (2x2)) 800 -Intel Pentium D 950(B1,Presler,65nm,3.40GHz,4MB (2x2)) 800 -Intel Pentium D 945(D0,Presler,65nm,3.40GHz,4MB) 800 -Intel Pentium D 945(C1,Presler,65nm,3.40GHz,4MB) 800 -Intel Pentium D 940(C1,Presler,65nm,3.20GHz,4MB) 800 -Intel Pentium D 940(B1,Presler,65nm,3.20GHz,4MB (2x2)) 800 -Intel Pentium D 935(D0,Presler,65nm,3.20GHz,4MB) 800 -Intel Pentium D 930(C1,Presler,65nm,3GHz,4MB) 800 -Intel Pentium D 930(B1,Presler,65nm,3GHz,4MB (2x2)) 800 -Intel Pentium D 925(C1,Presler,65nm,3GHz,4MB) 800 -Intel Pentium D 920(B1,Presler,65nm,2.80GHz,4MB (2x2)) 800 -Intel Pentium D 915(C1,Presler,65nm,2.80GHz,4MB) 800 -Intel Pentium D 840(B0,Smithfield,90nm,3.20GHz,2MB) 800 -Intel Pentium D 840(A0,Smithfield,90nm,3.20GHz,2MB) 800 -Intel Pentium D 830(B0,Smithfield,90nm,3GHz,2MB) 800 -Intel Pentium D 830(A0,Smithfield,90nm,3GHz,2MB) 800 -Intel Pentium D 820(B0,Smithfield,90nm,2.80GHz,2MB) 800 -Intel Pentium D 820(A0,Smithfield,90nm,2.80GHz,2MB) 800 -Intel Pentium D 805(B0,Smithfield,90nm,2.66GHz,2MB) 533 -Intel P4-Extreme Edition(N0,Prescott,90nm,3.73GHz,2MB) 1066 -Intel P4-Extreme Edition(M0,Northwood,0.13 micron,3.46GHz,2MB) 1066 - Intel P4-Extreme Edition(M0,Northwood,0.13 micron,3.40GHz,2MB) 800 -Intel Pentium 4 672(R0,Prescott,90nm,3.80GHz,2MB) 800 -Intel Pentium 4 670(R0,Prescott,90nm,3.80GHz,2MB) 800 -Intel Pentium 4 670(N0,Prescott,90nm,3.80GHz,2MB) 800 -Intel Pentium 4 662(R0,Prescott,90nm,3.60GHz,2MB) 800 -Intel Pentium 4 661(B1,Cedar Mill,65nm,3.60GHz,2MB) 800 -Intel Pentium 4 660(N0,Prescott,90nm,3.60GHz,2MB) 800 -Intel Pentium 4 651(D0,Cedar Mill,65nm,3.40GHz,2MB) 800 -Intel Pentium 4 651(B1,Cedar Mill,65nm,3.40GHz,2MB) 800 -Intel Pentium 4 650(R0,Prescott,90nm,3.40GHz,2MB) 800 -Intel Pentium 4 650(N0,Prescott,90nm,3.40GHz,2MB) 800 -Intel Pentium 4 641(D0,Cedar Mill,65nm,3.20GHz,2MB) 800 -Intel Pentium 4 641(B1,Cedar Mill,65nm,3.20GHz,2MB) 800 -Intel Pentium 4 640(N0,Prescott,90nm,3.20GHz,2MB) 800 -Intel Pentium 4 631(D0,Cedar Mill,65nm,3GHz,2MB) 800 -Intel Pentium 4 631(B1,Cedar Mill,65nm,3GHz,2MB) 800 -Intel Pentium 4 630(N0,Prescott,90nm,3GHz,2MB) 800 -Intel Pentium 4 571(E0,Prescott,90nm,3.80GHz,1MB) 800 -Intel Pentium 4 570J(E0,Prescott,90nm,3.80GHz,1MB) 800 -Intel Pentium 4 561(E0,Prescott,90nm,3.60GHz,1MB) 800 -Intel Pentium 4 560(D0,Prescott,90nm,3.60GHz,1MB) 800 -Intel Pentium 4 560J(E0,Prescott,90nm,3.60GHz,1MB) 800 -Intel Pentium 4 551(G1,Prescott,90nm,3.40GHz,1MB) 800 -Intel Pentium 4 551(E0,Prescott,90nm,3.40GHz,1MB) 800 -Intel Pentium 4 550(E0,Prescott,90nm,3.40GHz,1MB) 800 -Intel Pentium 4 550J(E0,Prescott,90nm,3.40GHz,1MB) 800 -Intel Pentium 4 541(E0,Prescott,90nm,3.20GHz,1MB) 800 -Intel Pentium 4 540(E0,Prescott,90nm,3.20GHz,1MB) 800 -Intel Pentium 4 531(E0,Prescott,90nm,3.00GHz,1MB) 800 -Intel Pentium 4 530(D0,Prescott,90nm,3GHz,1MB) 800 -Intel Pentium 4 530J(E0,Prescott,90nm,3GHz,1MB) 800 -Intel Pentium 4 524(G1,Prescott,90nm,3.06GHz,1MB) 533 -Intel Pentium 4 521(E0,Prescott,90nm,2.80GHz,1MB) 800 -Intel Pentium 4 520(D0,Prescott,90nm,2.80GHz,1MB) 800 -Intel Pentium 4 519K(G1,Prescott,90nm,3.06GHz,1MB) 533 -Intel Pentium 4 516(G1,Prescott,90nm,2.93GHz,1MB) 533 -Intel Pentium 4 516(E0,Prescott,90nm,2.93GHz,1MB) 533 -Intel Pentium 4 506(E0,Prescott,90nm,2.66GHz,1MB) 533 -Intel Pentium 4 505J(E0,Prescott,90nm,2.66GHz,1MB) 533 -Intel Celeron 400 Sequence 440(A1,Conroe-L,65nm,2GHz,512KB) 800 - Intel Celeron 400 Sequence 430(A1,Conroe-L,65nm,1.8GHz,512KB) 800 - Intel Celeron 400 Sequence 420(A1,Conroe-L,65nm,1.60GHz,512KB) 800 - Intel Celeron D 365(D0,Cedar Mill,65nm,3.60GHz,512KB) 533 -Intel Celeron D 360(D0,Cedar Mill,65nm,3.46GHz,512KB) 533 -Intel Celeron D 356(C1,Cedar Mill,65nm,3.33GHz,512KB) 533 -Intel Celeron D 355(G1,Prescott,90nm,3.33GHz,256KB) 533 -Intel Celeron D 352(C1,Cedar Mill,65nm,3.20GHz,512KB) 533 - Intel Celeron D 351(E0,Prescott,90nm,3.20GHz,256KB) 533 - Intel Celeron D 346(E0,Prescott,90nm,3.06GHz,256KB) 533 - Intel Celeron D 345J(E0,Prescott,90nm,3.06GHz,256KB) 533 - Intel Celeron D 341(E0,Prescott,90nm,2.93GHz,256KB) 533 - Intel Celeron D 340J(E0,Prescott,90nm,2.93GHz,256KB) 533 - Intel Celeron D 336(E0,Prescott,90nm,2.80GHz,256KB) 533 - Intel Celeron D 335J(E0,Prescott,90nm,2.80GHz,256KB) 533 - Intel Celeron D 331(E0,Prescott,90nm,2.66GHz,256KB) 533 - Intel Celeron D 330J(E0,Prescott,90nm,2.66GHz,256KB) 533 - Intel Celeron D 326(E0,Prescott,90nm,2.53GHz,256KB) 533 - Intel Celeron D 325J(E0,Prescott,90nm,2.53GHz,256KB) 533 - Intel Core™ 2 Extreme QX9770(3.2GHz,12 MB) 1600 N/AIntel Core™ 2 Extreme QX9650(3.0GHz,12MB) 1333 N/AIntel Core™ 2 Quad Q9650(3.0 GHz,12MB) 1333 N/AIntel Core™ 2 Quad Q9550(2.83GHz,12MB) 1333 N/AIntel Core™ 2 Quad Q9450(2.66GHz,12MB) 1333 N/AIntel Core™ 2 Quad Q9400(2.66GHz,6MB) 1333 N/AIntel Core™ 2 Quad Q9300(2.50GHz,6MB) 1333 N/AIntel Core™ 2 Quad Q8200(2.33GHz,4MB) 1333 N/AIntel Core™ 2 Duo E8600(3.33GHz,6MB) 1333 N/AIntel Core™ 2 Duo E8500(3.16GHz,6MB) 1333 N/AIntel Core™ 2 Duo E8400(3GHz,6MB) 1333 N/AIntel Core™ 2 Duo E8300(2.83GHz,6MB) 1333 N/AIntel Core™ 2 Duo E8200(2.66GHz,6MB) 1333 N/AIntel Core™ 2 Duo E8190(2.66GHz,6MB) 1333 N/AIntel Core™ 2 Extreme QX6850(3.0GHz,8MB) 1333 N/AIntel Core™ 2 Extreme QX6800(2.93GHz,8MB) 1066 N/AIntel Core™ 2 Extreme QX6700(2.66GHz,8MB) 1066 N/AIntel Core™ 2 Quad Q6700(2.66MHz,8MB) 1066 N/AIntel Core™ 2 Quad Q6600(2.4GHz,8MB) 1066 N/AIntel Core™ 2 Extreme X6800(2.93GHz,4MB) 1066 N/AIntel Core™ 2 Duo E7500(2.93GHz,3M B) 1066 N/AIntel Core™ 2 Duo E7400(2.8GHz,3MB) 1066 N/AIntel Core™ 2 Duo E7300(2.66GHz,3MB) 1066 N/AIntel Core™ 2 Duo E7200(2.53GHz,3MB) 1066 N/AIntel Core™ 2 Duo E6850(3.0GHz,4MB) 1333 N/AIntel Core™ 2 Duo E6750(2.66GHz,4MB) 1333 N/AIntel Core™ 2 Duo E6550(2.33GHz,4MB) 1333 N/AIntel Core™ 2 Duo E6540(2.33GHz,4MB) 1333 N/AIntel Core™ 2 Duo E6700(2.66GHz,4MB) 1066 N/AIntel Core™ 2 Duo E6600(2.4GHz,4MB) 1066 N/AIntel Core™ 2 Duo E6420(2.13GHz,4MB) 1066 N/AIntel Core™ 2 Duo E6400(2.13GHz,2MB) 1066 N/AIntel Core™ 2 Duo E6320(1.86GHz,4MB) 1066 N/AIntel Core™ 2 Duo E6300(1.86GHz,2MB) 1066 N/AIntel Core™ 2 Duo E4700(2.60GHz,2MB) 800 N/AIntel Core™ 2 Duo E4600(2.40GHz,2MB) 800 N/AIntel Core™ 2 Duo E4500(2.2GHz,2MB) 800 N/AIntel Core™ 2 Duo E4400(2.0GHz,2MB) 800 N/AIntel Core™ 2 Duo E4300(1.8GHz,2MB) 800 N/AIntel Pentium Dual-Core E5200(2.50GHz,2MB) 800 N/AIntel Pentium Dual-Core E2220(2.40GHz,1MB) 800 N/AIntel Pentium Dual-Core E2200(2.2GHz,1MB) 800 N/AIntel Pentium Dual-Core E2180(2.00GHz,1MB) 800 N/AIntel Pentium Dual-Core E2160(1.8GHz,1MB) 800 N/AIntel Pentium Dual-Core E2140(1.6GHz,1MB) 800 N/AIntel Celeron Dual-Core E1400(2.0GHz,512KB) 800 N/A Intel Celeron Dual-Core E1200(1.60GHz,512KB) 800 N/A Intel Pentium-Extreme Edition 965(3.73GHz,4MB) 1066 N/A Intel Pentium-Extreme Edition 955(3.46GHz,4MB) 1066 N/A Intel Pentium-Extreme Edition 840-XE(3.2GHz,2MB) 800 N/A Intel Pentium D 960(3.6GHz,4MB) 800 F4Intel Pentium D 950(3.4GHz,4MB) 800 F2Intel Pentium D 945(3.4GHz,4MB) 800 F4Intel Pentium D 940(3.2GHz,4MB) 800 F2Intel Pentium D 935(3.2GHz,4MB) 800 F2Intel Pentium D 930(3.0GHz,4MB) 800 F2Intel Pentium D 925(3.0GHz,4MB) 800 F4Intel Pentium D 920(2.8GHz,4MB) 800 F2Intel Pentium D 915(2.8GHz,4MB) 800 F4Intel P4-Extreme Edition 3.73GHz(2MB) 1066 F2(Run at FSB 800 MHz)Intel P4-Extreme Edition 3.46GHz(2MB) 1066 F2(Run at FSB 800 MHz)Intel P4-Extreme Edition 3.4GHz(2MB) 800 F2Intel Pentium D 840(3.2GHz,2MB) 800 F2Intel Pentium D 830(3.0GHz,2MB) 800 F2Intel Pentium D 820(2.8GHz,2MB) 800 F2Intel Pentium D 805(2.66GHz,2MB) 533 F2Intel Pentium 4 672(3.8GHz,2MB) 800 F2Intel Pentium 4 670(3.8GHz,2MB) 800 F2Intel Pentium 4 662(3.6GHz,2MB) 800 F2Intel Pentium 4 661(3.6GHz,2MB) 800 F2Intel Pentium 4 660(3.6GHz,2MB) 800 F2Intel Pentium 4 651(3.4GHz,2MB) 800 F2Intel Pentium 4 650(3.4GHz,2MB) 800 F2Intel Pentium 4 641(3.2GHz,2MB) 800 F2Intel Pentium 4 640(3.2GHz,2MB) 800 F2Intel Pentium 4 631(3.0GHz,2MB) 800 F2Intel Pentium 4 630(3.0GHz,2MB) 800 F2Intel Pentium 4 571(3.8GHz,1MB) 800 F2Intel Pentium 4 570J(3.8GHz,1MB) 800 F2Intel Pentium 4 561(3.6GHz,1MB) 800 F2Intel Pentium 4 560(J)(3.6GHz,1MB) 800 F2Intel Pentium 4 551(3.4GHz,1MB) 800 F2Intel Pentium 4 550(J)(3.4GHz,1MB) 800 F2Intel Pentium 4 541(3.2GHz,1MB) 800 F2Intel Pentium 4 540(J)(3.2GHz,1MB) 800 F1Intel Pentium 4 531(3.0GHz,1MB) 800 F2Intel Pentium 4 530(J)(3.0GHz,1MB) 800 F2Intel Pentium 4 524(3.06GHz,1MB) 533 F4Intel Pentium 4 521(2.8GHz,1MB) 800 F2Intel Pentium 4 520(J)(2.8GHz,1MB) 800 F2Intel Pentium 4 519K(3.06GHz,1MB) 533 F2Intel Pentium 4 516(2.93GHz,1MB) 533 F2Intel Pentium 4 515(J)(2.93GHz,1MB) 533 F2Intel Pentium 4 511(2.8GHz,1MB) 533 F1Intel Pentium 4 510(J)(2.8GHz,1MB) 533 F1Intel Pentium 4 506(2.66GHz,1MB) 533 F2Intel Pentium 4 505(J)(2.66GHz,1MB) 533 F2Intel Celeron 400 Sequence (Conroe-L) 440(2.0GHz,512KB) 800 N/A Intel Celeron 400 Sequence (Conroe-L) 430(1.8GHz,512KB) 800 N/A Intel Celeron 400 Sequence (Conroe-L) 420(1.6GHz,512KB) 800 N/A Intel Celeron D 360(3.46GHz,512KB) 533 F4Intel Celeron D 356(3.33GHz,512KB) 533 F4Intel Celeron D 355(3.33GHz,256KB) 533 F2Intel Celeron D 352(3.2GHz,512KB) 533 F4Intel Celeron D 351(3.2GHz,256KB) 533 F2Intel Celeron D 347(3.06GHz,512KB) 533 F4Intel Celeron D 346(3.06GHz,256KB) 533 F1Intel Celeron D 345J(3.06GHz,256KB) 533 F2Intel Celeron D 341(2.93GHz,256KB) 533 F1Intel Celeron D 340J(2.93GHz,256KB) 533 F2Intel Celeron D 336(2.8GHz,256KB) 533 F2Intel Celeron D 335J(2.8GHz,256KB) 533 F2Intel Celeron D 331(2.66GHz,256KB) 533 F2Intel Celeron D 330J(2.66GHz,256KB) 533 F2Intel Celeron D 326(2.53GHz,256KB) 533 F1Intel Celeron D 325J(2.53GHz,256KB) 533 F1。
服务器金-银-铜 至强CPU速查表
DDR4-2933 150W
金牌 6136 3.0G, 12C/24T, 24.75M 缓存,10.4GT/s 2UPI, Turbo,HT
DDR4-2666 150W
金牌 6138 2.0G, 20C/40T, 27M 缓存, 10.4GT/s 2UPI, Turbo,HT
DDR4-2666 125W
DDR4-2667
85W
金牌 5117 2.0-2.8G, 14C/28T 19.25M缓存 2UPI Turbo, HT
DDR4-2400 105W
金牌 5217 3.0-3.7G, 8C/16T 11MB缓存 Turbo, HT
DDR4-2667 115W
金牌 5118 2.3-3.2G, 12C/24T, 16M 缓存, 10.4GT/s 2UPI, Turbo, HT DDR4-2400 105W
DDR4-2400 100W
银牌 4112 2.6-3.0G, 4C/8T, 8.25M缓存, 9.6GT/s 2UPI, Turbo, HT
DDR4-2400
85W
银牌 4114 2.2-3.0G, 10C/20T, 13.75M 缓存, 9.6GT/s 2UPI, Turbo, HT
DDR4-2400
85W
银牌 4214 2.2-3.2G 12C/24T 17MB 缓存， Turbo, HT
DDR4-2400
85W
银牌 4214R 2.4-3.5G 12C/24T 16.5MB缓存 Turbo, HT 深度学习提升
DDR4-2400 100W
银牌 4215 2.5-3.5G 8C/16T 11MB 缓存， Turbo, HT
英特尔至强铂金 规格参数
戴尔易安信 PowerEdge 服务器第二代 AMD EPYC 处理器的平衡内存说明书
WhitepaperBalanced Memory with 2nd GenerationAMD EPYC TM Processorsfor PowerEdge ServersOptimizing Memory PerformanceRevision: 1.4Issue Date: 4/21/2020AbstractProperly configuring a server with balanced memory is critical to ensure memorybandwidth is maximized and latency is minimized. When server memory is configured incorrectly, unwanted variables are introduced into the memory controllers’ algorithm, which inadvertently slows down overall system performance. To mitigate this risk of reducing or even bottlenecking system performance, it is important to understand what constitutes balanced, near balanced and unbalanced memory configurations.Dell EMC has published this brief to educate PowerEdge customers on what balanced memory means, why it is important and how to properly populate memory to 2ndGeneration AMD EPYC TM server processors for a balanced configuration.RevisionsDate Description12 September 2019 Initial release for 1st wave of AMD CPUs21 April 2020Includes all AMD CPU SKUs AcknowledgementsThis paper was produced by the following people:Name RoleMatt Ogle Technical Product Marketing, Dell EMC Trent Bates Product Management, Dell EMCJose Grande Software Senior Principal Engineer, Dell EMC Andres Fadul Software Senior Principal Engineer, Dell EMCTable of Contents1.Introduction (4)2.Memory Topography and Terminology (5)3.Memory Interleaving (6)3.1NPS and Quadrant Pairing (6)4.Memory Population Guidelines (9)4.1Overview (9)4.2Memory Channel Population (9)4.3Identical CPU and DIMM Parts (10)4.4Identical Memory Configurations for Each CPU (10)5.Balanced Configurations (Recommended) (11)6.Near Balanced Configurations (12)7.Unbalanced Configurations (13)8.Conclusion (19)9. References (19)1. IntroductionUnderstanding the relationship between a server processor (CPU) and its memory subsystem is critical when optimizing overall server performance. Every processor generation has a unique architecture, with volatile controllers, channels and slot population guidelines, that must be satisfied to attain high memory bandwidth and low memory access latency.2nd Generation AMD EPYC TM server processors, which will be referred to by their code name throughout this white paper, Rome processors, offer a total of eight memory channels with up to two memory slots per channel.1 This presents numerous possible permutations for configuring the memory subsystem with traditional Dual In-Line Memory Modules (DIMMs), yet there are only a couple of balanced configurations that will achieve the peak memory performance for Dell EMC PowerEdge servers.Memory that has been incorrectly populated is referred to as an unbalanced configuration. From a functionality standpoint, an unbalanced configuration will operate adequately, but introduces significant additional overhead that will slow down data transfer speeds. Similarly, a near balanced configuration does not yield fully optimized data transfer speeds but it is only suboptimal to that of a balanced configuration. Conversely, memory that has been correctly populated is referred to as a balanced configuration and will secure optimal functionality and data transfer speeds.This white paper explains how to balance memory configured for Rome processors within Dell EMC PowerEdge servers.2. Memory Topography and TerminologyFigure 1: CPU-to-memory subsystem connectivity for Rome processorsTo understand the relationship between the CPU and memory, terminology illustrated in Figure 1 must first be defined:•Memory controllers are digital circuits that manage the flow of data going from the computer’s main memory to the corresponding memory channels.2 Romeprocessors have eight memory controllers in the processor I/O die, with onecontroller assigned to each channel.•Memory channels are the physical layer on which the data travels between the CPU and memory modules.3 As seen in Figure 1, Rome processors have eightmemory channels designated A, B, C, D, E, F, G and H. These channels wereintended to be organized into pairs such as two-way (AB, CD, EF, GH), four-way (ABCD, EFGH) or eight-way (ABCDEFGH).•The memory slots are internal ports that connect the individual DIMMs to their respective channels.4 Rome processors have two slots per channel, so there are a total of sixteen slots per CPU for memory module population. DIMM 1 slots are the first eight memory modules to be populated while DIMM 0 slots are the last eight.In the illustrations ahead, DIMM 1 slots will be represented with black text marked A1-A8 and DIMM 0 slots will be represented with white text marked A9-A16.•The memory subsystem is the combination of all the independent memory functions listed above.3. Memory InterleavingMemory interleaving allows a CPU to efficiently spread memory accesses across multiple DIMMs. When memory is put in the same interleave set, contiguous memory accesses go to different memory banks. Memory accesses no longer must wait until the prior access is completed before initiating the next memory operation. For most workloads, performance is maximized when all DIMMs are in one interleave set creating a single uniform memory region that is spread across as many DIMMs as possible.5 Multiple interleave sets create disjointed memory regions.3.1 NPS and Quadrant PairingRome processors achieve memory interleaving by using Non-Uniform Memory Access (NUMA) in Nodes Per Socket (NPS).6 There are four NPS options available in the Dell EMC BIOS:1. NPS 0– One NUMA node per system (on two processors systems only). Thismeans all channels in the system are using one interleave set.2. NPS 1– One NUMA node per socket (on one processor systems). This means allchannels in the socket are using one interleave set.3. NPS 2– Two NUMA nodes per socket (one per left/right half). This means eachhalf containing four channels is using one interleave set; a total of two sets.4. NPS 4– Up to four NUMA nodes per socket (one per quadrant). This means eachquadrant containing two channels is using one interleave set; a total of four sets. The simplest visual aid for understanding the NPS system is to divide the CPU into four quadrants. We see below in Figure 2 that each quadrant contains two paired DIMM channels that can host up to two DIMMs. The paired DIMM channels in each quadrant were designed to group and minimize the travel distance for interleaved sets. NPS 1 would correlate to all four quadrants being fully populated. NPS 2 would correlate to having either the left or right half quadrant being fully populated. NPS 4 would correlate to having any one quadrant being fully populated.Figure 2: Quadrant layout of Rome processors3.2 NPS and Quadrant PairingNPS 0 and NPS 1 will typically yield the best memory performance, followed by NPS 2 and then NPS 4. The Dell EMC default setting for BIOS NUMA NPS is NPS 1 and mayneed to be manually adjusted to match the NPS option that supports the CPU model. As seen below in Figure 3 there are various CPUs that will not support NPS 2 or 4 that require awareness of which memory configurations are optimized for each CPU. Figure 4 below shows our recommended NPS setting for each # of DIMMs per CPU:Figure 3: A full list of 2nd Gen AMD EPYC™ CPUs and their respectivesupported NPS models. The CPUs with an asterisk have been optimizedto reduce the performance impact of only filling four DIMM channels.Figure 4: Recommended NPS setting for each# of DIMMs per CPUIf the NPS setting for a memory configuration will limit performance (as seen in Figure 5), Dell EMC BIOS will return the following informative prompts to the user:UEFI0391: Memory configuration supported but not optimal for the enabledNUMA node Per Socket (NPS) setting. Please consider the following actions:1) Changing NPS setting under System Setup>System BIOS>ProcessorSettings>NUMA Nodes Per Socket, if supported.2) For optimized memory configurations please refer to the General MemoryModule Installation Guidelines section in the Installation and ServiceManual, of the respective server model available on the support site.In layman’s terms, a different NPS setting or memory configuration will result in better memory performance. The system is fully functional when this message appears, but it is not fully optimized for best performance.Figure 5: Color-coded table illustrating whenan informative message will occur (yellow) orno message (green)4. M emory Population Guidelines4.1 OverviewDIMMs must be populated into a balanced configuration to yield the highest memory bandwidth and lowest memory access latency. Various factors will dictate whether a configuration is balanced or not. Please follow the guidelines below for best results 7:o Memory Channel Population•Balanced Configuration-All memory channels must be fully populated with one or two DIMMs for best performance; a total of eight or sixteen DIMMs per CPU•Near Balanced Configuration-Populate four or twelve DIMMs per socket-Populate DIMMs in sequential order (A1-A8)o CPU and DIMM parts must be identicalo Each CPU must be identically configured with memory4.2 Memory Channel PopulationTo achieve a balanced configuration, populate either eight or sixteen DIMMs per CPU. By loading each channel with one or two DIMMs, the configuration is balanced and has data traveling across channels most efficiently on one interleave set. Following this guideline will yield the highest memory bandwidth and the lowest memory latency. If a balanced configuration of sixteen or eight DIMMs per CPU cannot be implemented, then the next best option is a near balanced configuration. To obtain a near balanced population, populate four or twelve DIMMs per CPU in sequential order. When any number of DIMMs other than 4, 8, 12 or 16 is populated, disjointed memory regions are created making NPS 4 the only supported BIOS option to select.The last guideline is that DIMMs must be populated in an assembly order because Rome processors have an organized architecture for each type of CPU core count. To simplify this concept, the lowest core count was used as a common denominator, so the assembly order below will apply across all Rome processor types. Populating in this order ensures that for every unique Rome processor, any DIMM configuration is guaranteed the lowest NPS option, therefore driving the most efficient interleave sets and data transfer speeds. Figure 6 illustrates the assembly order in which individual DIMMs should be populated, starting with A1 and ending with A16:Figure 6: DIMM population order, starting with A1 and ending with A164.3 Identical CPU and DIMM PartsIdentical DIMMs must be used across all DIMM slots (i.e. same Dell part number). Dell EMC does not support DIMM mixing in Rome systems. This means that only one rank, speed, capacity and DIMM type shall exist within the system. This principle applies to the processors as well; multi-socket Rome systems shall be populated with identical CPUs.4.4 Identical Memory Configurations for Each CPUEvery CPU socket within a server must have identical memory configurations. When only one unique memory configuration exists across both CPU sockets within a server, memory access is further optimized. Figure 7 below illustrates the expected memory bandwidth curve when these rules are followed:Figure 7: Bar graph illustrating expected performance variation as # of dimms increases 16151413121110987654321M e m o r y B a n d w i d t h #DIMMs per CPU populatedR6525 Memory Bandwidth per DIMM Population BalancedNear-Balanced Unbalanced5. Balanced Configurations (Recommended)Balanced configurations satisfy NPS 0/1 conditions by requiring each memory channel to be populated with one or two identical DIMMs. By doing this, one interleave set can optimally distribute memory access requests across all the available DIMM slots; therefore, maximizing performance. Memory controller logic was designed around fullypopulated memory channels, so it should come as no surprise thateight or sixteen populated DIMMs are recommended. Having eight DIMMs will reap the highestmemory bandwidth while having sixteen DIMMs will yield the highest memory capacity.Figure 8: Eight DIMMs are populated in a balanced configuration, producing the highest memorybandwidth while at a lower capacity than sixteenFigure 9: Sixteen DIMMs are populated in a balanced configuration, producing the highest memorycapacity while at a lower bandwidth than eight6. Near Balanced ConfigurationsNear balanced configurations satisfy NPS 1 or 2 conditions by populating either four or twelve identical DIMMs per CPU. These configurations are not optimized because the channels are partially populated, which creates disjointed memory regions that reduce performance (making it near balanced). Performance for near balanced configurationswill undergo degradation when compared to balanced configurations. Although the below configurations are adequate for implementation, they are not highly recommended. *Note that CPUs 7282, 7252, 7232P and 7272 were designed to reduce the performance impact of populating four DIMM channels.Figure 10: Four DIMMs are populated in a near balanced configurationFigure 11: Twelve DIMMs are populated in a near balanced configuration7. U nbalanced ConfigurationsUnbalanced configurations can only satisfy NPS 4 conditions. More than two interleave sets can now be introduced to the memory controller algorithm which causes very disjointed regions. Memory performance for the unbalanced configurations below are significantly less than balanced or near balanced and are not recommended.Figure 12: One DIMM is populated in an unbalanced configurationFigure 13: Two DIMMs are populated in an unbalanced configurationFigure 14: Three DIMMs are populated in an unbalanced configurationFigure 15: Five DIMMs are populated in an unbalanced configurationFigure 16: Six DIMMs are populated in a near balanced configurationFigure 17: Seven DIMMs are populated in an unbalanced configurationFigure 18: Nine DIMMs are populated in an unbalanced configurationFigure 19: Ten DIMMs are populated in a near balanced configurationFigure 20: Eleven DIMMs are populated in an unbalanced configurationFigure 21: Thirteen DIMMs are populated in an unbalanced configurationFigure 22: Fourteen DIMMs are populated in a near balanced configurationFigure 23: Fifteen DIMMs are populated in an unbalanced configuration8. ConclusionBalancing memory with 2nd Generation EPYC TM server processors increases memory bandwidth and reduces memory access latency. When memory modules are configured in such a way that the memory subsystems are identical, and channels are fully populated with one or two DIMMs, one interleave set will create a single uniform memory region that is spread across as many DIMMs as possible. This allows the distribution of data to perform most efficiently on Dell EMC PowerEdge servers. Applying the balanced memory guidelines demonstrated in this brief will ensure that both memory bandwidth and memory access latency are optimized, therefore ensuring peak memory performance within Dell EMC PowerEdge servers.9. References1 https:///wp-content/resources/56301_1.0.pdf2 https:///travel_guide/124468/hardware/computer_memory_controllers_how_they_work.html3 https:///jargon/d/dual-channel-memory.htm4 https:///jargon/m/memoslot.htm5 https:///memory-interleaving/6 https:///system/files/2018-03/AMD-Optimizes-EPYC-Memory-With-NUMA.pdf7 https:///wp-content/resources/56301_1.0.pdfThe information in this publication is provided “as is.” Dell Inc. makes no representations or warranties of any ki nd withrespect to the information in this publication, and specifically disclaims implied warranties of merchantability or fitness for a particular purpose.Use, copying, and distribution of any software described in this publication requires an applicable software license.© 2020 Dell Inc. or its subsidiaries. All Rights Reserved. Dell, EMC, Dell EMC and other trademarks are trademarks of DellInc. or its subsidiaries. Other trademarks may be trademarks of their respective owners.Dell believes the information in this document is accurate as of its publication date. The information is subject to changewithout notice.。
飞鸟科技 FP2 系列产品参数表说明书
0.5A (12-24V DC), 0.1A (5V DC) 0.1A (12-24V DC), 50mA (5V DC) 0.1A (12-24V DC), 50mA (5V DC)
FP2-Y16P FP2-Y32P FP2-Y64P
DC input, Transistor Input 32 points
Note: Please refer to “FPΣ Product Types” for FP Memory Loader.
Backplane
Part number AFP2207 AFP5208 AFP5209 AIC50020 AIC52000
Product name
FP2 Backplane
AFP25005 AFP25007 AFP25009 AFP25012 AFP25014 AFP25011MH AFP25010EH AFP2510 AFP2512
Product name
Specification
Product number Part number
FP2 Power supply unit
Not available
note 2)
note 3)
Available
AvailableFP2-CBiblioteka FP2-C1D FP2-C1SL
Standard type CPU unit FPSH CPU unit with IC memory card interface
CPU unit with IC memory card interface
Product types
CPU units (Built-in RAM)
Product name
计算机硬件指标
显存容量决定了显示芯片能处理的数据量。除显存频率和位宽外，影响显卡性能的一个非常重要的指标就是显存的容量。从理论上讲，显存容量越大，显卡性能就越好。
⑵显示器的性能参数
显示器作为最重要的输出设备，其性能好坏直接影响到用户的使用和身体健康。根据显示器成像原理，可分为CRT显示器、LCD（液晶）显示器和等离子显示器（PD），目前用户常用的是CRT显示器和LCD（液晶）显示器。
BIOS惠普68CPC Ver. F.02
制造日期06/09/2011
内存：
DIMM 0:海力士DDR3 1333MHz 2GB
制造日期2010年01月
型号AD HMT125S6BFR8C-H9 N0
序列号:BD43B222
DIMM 3:金士顿DDR3 1333MHz 2GB
制造日期2011年04月
CPU的接口是指CPU与主板插槽接触的部位。
⑹制造工艺
CPU的制造工艺一般是指CPU内部主要电子元件之间所间隔的距离，其单位通常为nm(纳米)，生产工艺越先进，连接线越细，CPU内部功耗和发热量越小，其集成度越高。
主板：
⑴主板的结构
主板上的主要结构元素有以下几点：
①主板的接口
目前大多数主板的接口一般有IDE接口、SATA接口、软驱接口等。
④可扩充性
主板的扩充能力主要体现在有足够的扩展槽、内存插槽、CPU插槽及硬盘、光驱接口、USB接口等。
内存：
内存的主要性能参数有容量、工作电压、存取时间、工作频率、数据宽度等。
⑴容量
计算机中内存容量越大，计算机运行速度也就越快。但内存容量的增加受到主板芯片支持能力和内存插槽数量的制约。因此在扩充内存容量时，要了解所使用的主板所支持的最大内存容量和空闲的内存插槽数量。
TCLMBO508说明书
MBO508感谢您选购了TCL手机，为使您的手机使用在最佳状态，请详细阅读本手册。
1.安全及注意事项 (2)2.手机外观 (7)3.手机规格一览表 (8)4.使用前的准备工作 (8)5.手机简要说明 (11)6.手机基本操作 (13)7.使用菜单功能 (15)通话记录 (15)信息 (16)电话本 (19)蓝牙 (20)多媒体 (21)娱乐 (24)网络服务 (24)时尚MBO (25)工具 (27)文件管理 (28)贴心助理 (28)设置 (30)8.输入法操作说明 (33)第 1 页9.附录一 常见故障诊断 (35)10.附录二 缩略语及其解释 (36)声明：本公司保留不作预先通知的情况下对产品进行改进的权利，对公司产品的性能说明保留最终解释权。
本公司致力改善产品的质量，不断推出更新版，故说明书所载与产品的功能、规格或设计略有不同，请以您的手机为准，此等更改恕未能另行通知，敬请见谅。
1.安全及注意事项为了减少对人身伤害、电击、火的危险性，以及设备的损坏，请仔细阅读以下规则，并遵守这些规则，以防危险和违法。
重大安全事项提示易燃易爆区域◆在易燃易爆区域，请您关机。
请勿安装/取出电池、或给电池充电、使用手机，以免引起爆炸或火灾，易燃易爆区域有：化工厂、空气中含化学物质或微粒（如：颗粒、灰尘、金属粉末）的区域。
加油站、油库。
燃料区（如：船甲板下的舱体）。
有爆炸危险标志的区域。
有“关掉双向无线电设备”标志的区域。
通常建议您关闭汽车引擎区域等。
手机使用安全◆在雷雨天气时，请勿在充电时使用手机，或者在室外使用手机，以免受到雷击或其它伤害。
◆请不要将电池放在高温环境下（高温会导致电池热量提升），否则可能会导致着火或爆炸。
第 2 页◆请勿将手机整夜(或长时间)地进行充电，并请将充电中的手机、充电器远离人身或其它易燃易爆物品的旁边，以免发生着火、爆炸或其它危险！◆在禁止使用手机场合，请严格遵守，务必将手机关机!◆请勿将手机、电池及充电器放置于具有强大电磁场的器具中，如电磁锅和微波炉，否则可能会导致电路故障、着火或爆炸。
全志科技股份有限公司Allwinner A系列SDRAM支持列表说明书
Allwinner Axx SDRAM Support ListGeneral Description:1.The purpose of this document is the guide of DDR seclection for customer using our solution.2.There are some DDRs that not mentioned here. Since DDR is an universal device. So you can test3. Since DDR is high speed device. Please directly copy our PCB DRAM Part Template and followAbbr. and Definition of Status:Abbr.DefinitionX Do Not SupportD/S Datasheet SupportS/T Sample Tested√Sample Tested and Mass ProductionVendor Part Number Type package Density Organization A31(s)A20A23A80A33A83R58R16A64Hynix H5TQ2G83CFR-xxC DDR3FBGA 782Gb256Mx8√√S/T D/S D/S D/S D/S D/SH5TQ2G83DFR-xxC DDR3FBGA 782Gb256Mx8√√D/S D/S D/S D/S D/S D/SH5TQ2G63DFR-xxC DDR3FBGA 962Gb128Mx16D/S D/S X D/S D/S D/S D/S D/SH5TQ2G83EFR-xxC DDR3FBGA 782Gb256Mx8√√√D/S D/S D/S D/S D/SH5TQ2G83FFR-xxC DDR3FBGA 782Gb256Mx8D/S D/S D/S D/S D/S D/S D/S D/SH5TQ2G63FFR-xxC DDR3FBGA 962Gb128Mx16S/T D/S X S/T D/S D/SH5TQ4G83MFR-xxC DDR3FBGA 784Gb512Mx8D/S D/S D/S D/S D/S D/S D/S D/SH5TQ4G63MFR-xxC DDR3FBGA 964Gb256Mx16S/T S/T S/T D/S D/S S/T S/T D/SH5TQ4G83AFR-xxC DDR3FBGA 784Gb512Mx8S/T S/T√D/S D/S D/S D/S D/SH5TQ4G63AFR-xxC DDR3FBGA 964Gb256Mx16√√√S/T S/T S/T S/T S/TH5TQ4G63AFR-RDC DDR3FBGA 964Gb256Mx16S/T S/T S/T S/T H5TC2G83EFR-xxA DDR3L FBGA 782Gb256Mx8D/S D/S S/T D/S D/S D/S D/S D/SH5TC2G83FFR-xxA DDR3L FBGA 782Gb256Mx8D/S D/S D/S D/S D/S D/S D/S D/SH5TC2G63FFR-xxA DDR3L FBGA 962Gb128Mx16S/T S/T X S/T D/S D/SH5TC4G83AFR-xxA DDR3L FBGA 784Gb512Mx8S/T D/S S/T D/S D/S D/S D/S D/SH5TC4G63AFR-xxA DDR3L FBGA 964Gb256Mx16S/T S/T S/T S/T D/S S/T S/T D/S S/T H5TC4G83BFR-PBA DDR3L FBGA 784Gb512Mx8D/S D/S S/T D/S S/T D/S D/S S/TH5TC2G83EFR-xxR DDR3L-RS FBGA 782Gb256Mx8D/S D/S D/S D/S D/S D/S D/S D/SH5TC2G63DFR-xxR DDR3L-RS FBGA 962Gb128Mx16D/S D/S X D/S D/S D/S D/S D/SH5TC2G63FFR-xxR DDR3L-RS FBGA 962Gb128Mx16D/S D/S X D/S D/S D/S D/S D/SH5TC4G83AFR-xxR DDR3L-RS FBGA 784Gb512Mx8D/S D/S D/S D/S D/S D/S D/S D/SH5TC4G63AFR-xxR DDR3L-RS FBGA 964Gb256Mx16D/S D/S D/S D/S D/S D/S D/S D/SH5TC8G63AMR-PBA DDR3L FBGA 968Gb256Mx16x2CS D/S D/S X S/T S/T S/T S/T S/TH5TC8G83AMR-PBA DDR3L FBGA 788Gb512Mx8x2CS D/S D/S X D/S D/S D/S D/S D/SH5TC4G63CFR-PBA DDR3L FBGA 964Gb256Mx16D/S D/S D/S D/S D/S S/T S/T D/S S/T H9TKNNN8JDAPLR-NGN LPDDR28Gb128Mx32x2CS D/S X X D/S X D/S D/S XH9CCNNN8JTALAR-NTD LPDDR3FBGA 1788Gb128Mx32x2CS D/S X X S/T X S/T S/T XH9CCNNNBLTALAR-NTM LPDDR3FBGA 17816Gb256Mx32x2CS S/T S/TH9CKNNN8GTMPLR-NUH LPDDR3POP 1688Gb128Mx32x2CS S/T S/TH9CCNNNBJTMLAR-NUM LPDDR3POP 16816Gb256Mx32x2CSNanya（南亚）NT5CB128M8DN-xx DDR3FBGA 781Gb128Mx8D/S S/T X X X D/S D/S XNT5CB256M8GN-xx DDR3FBGA 782Gb256Mx8S/T S/T S/T D/S S/T D/S D/S S/TNT5CB256M8FN-xx DDR3FBGA 782Gb256Mx8S/T S/T S/T D/S D/S D/S D/S D/SNT5CB128M16HP-xx DDR3FBGA 962Gb128Mx16S/T S/T X S/T D/S D/SNT5CB128M16FP-xx DDR3FBGA 962Gb128Mx16D/S D/S X D/S D/S D/SNT5CB256M16BP-xx DDR3FBGA 964Gb256Mx16S/T S/T S/T S/T S/T D/S D/S S/TNT5CC512M8CN-xx DDR3L FBGA 784Gb512Mx8S/T S/T S/T D/S D/S D/S D/S D/SNT5CC256M16CP-xx DDR3L FBGA 964Gb256Mx16S/T D/S D/S D/S D/S D/S D/S D/SNT5CC256M16CP-DI DDR3L FBGA 964Gb256Mx16S/T S/T S/T S/T S/T S/T NT6CL256T32AQ-H2LPDDR3POP 1688Gb128Mx32x2CS S/T S/TNT6CL128M32AQ-H2LPDDR3POP 1684Gb128Mx32x1CS D/S D/SNT5CC256M16DP-DI DDR3L FBGA 964Gb256Mx16S/T S/T S/T S/T NT5CC128M16IP-DI DDR3L FBGA 962Gb128Mx16NT5CB64M16FP-DH DDR3FBGA 961Gb64Mx16NT6TL256T32AQ-G1LPDDR2POP 1688Gb128Mx32x2CS S/T S/TNT6TL128M32AQ-G0LPDDR2POP 1684Gb128Mx32x1CS S/T S/TNT5CC64M16GP-DI DDR3L FBGA 961Gb64Mx16Elpida EDJ2108BDBG-DJ-F DDR3FBGA 782Gb256Mx8D/S D/S D/S D/S D/S D/S D/S D/SEDJ4216EFBG-GN-F DDR3FBGA 964Gb256Mx16S/T S/T S/T S/T S/T D/S D/S S/TEDJ4208EFBG-GNL-F DDR3L FBGA 784Gb512Mx8S/T S/T D/S D/S D/S D/S D/S D/SEDJ4208EFBG-GN-F DDR3FBGA 784Gb512Mx8S/T S/T D/S D/S D/S D/S D/S D/SEDJ4216EFBG-GNL-F DDR3L FBGA 964Gb256Mx16S/T S/T S/T D/S S/T D/S D/S S/T S/T J2108DEBG-DJ-F DDR3FBGA 782Gb256Mx8D/S D/S D/S D/S D/S D/S D/S D/SAllwinner Technology CO., Ltd.ElpidaEDB8132B3MC-8D-F LPDDR28Gb128Mx32x2CS S/T X X S/T X D/S D/S XEDB8132B2MA-8D-F LPDDR28Gb128Mx32x2CS D/S X X S/T X D/S D/S XEDFA232A1MA-GD-F LPDDR316Gb256Mx32x2CS D/S X X D/S X D/S D/S XMicron MT41K256M8DA-125DDR3L FBGA 782Gb256Mx8D/S D/S S/T D/S D/S D/S D/S D/SMT41K128M16JT-125DDR3L FBGA 962Gb128Mx16S/T D/S X X X D/S D/S XMT41J128M16JT-107DDR3FBGA 962Gb128Mx16S/T S/T X X X D/S D/S XMT41K256M16HA-125DDR3L FBGA 964Gb256Mx16S/T D/S S/T S/T S/T D/S D/S S/T S/T MT41K512M8RH-125DDR3L FBGA 784Gb512Mx8D/S D/S S/T D/S D/S D/S D/S D/SMT41J256M8HX-15DDR3FBGA 782Gb256Mx8D/S D/S S/T D/S S/T D/S D/S S/TSAMSUNG K4B4G1646B-HCK0DDR3FBGA 964Gb256Mx16S/T S/T S/T D/S D/S S/T S/T D/SK4B2G1646E-BCK0DDR3FBGA 962Gb128Mx16S/T D/S X D/S D/S D/SK4B2G0846D-HCK0DDR3FBGA 782Gb256Mx8D/S D/S D/S D/S D/S D/S D/S D/SK4B2G1646Q-BCK0DDR3FBGA 962Gb128Mx16S/T D/S X D/S S/T D/S D/S S/TK4B4G1646Q-HYK0DDR3L FBGA 964Gb256Mx16S/T S/T S/T S/T S/T S/T S/T S/T S/T K4B8G1646Q-MYK0DDR3L FBGA968Gb256Mx16x2CS D/S D/S X D/S D/S S/T S/T D/SK4B4G1646D-BCK0DDR3FBGA964Gb256Mx16S/T K4E8E304ED-EGCF LPDDR3FBGA 1788Gb128Mx32x2CS D/S X X S/T X S/T S/T XK4E8E304ED-EGCE LPDDR3FBGA 1788Gb128Mx32x2CS D/S X X D/S X S/T S/T XK4E8E304ED-EGCC LPDDR3FBGA 1788Gb128Mx32x2CS D/S X X S/T X S/T S/T XK4E4E324ED-EGCF LPDDR3FBGA 1784Gb128Mx32x1CS S/T X X D/S X D/S D/S XK4P8G304EG-AGC2LPDDR2POP 1688Gb128Mx32x2CS S/T X X D/S X D/S D/S XK4E8E304EE-EGCE LPDDR3FBGA 1788Gb128Mx32x2CS D/S X X S/T X S/T S/T X S/T K4E6E304EE-EGCE LPDDR3FBGA 17816Gb256Mx32x2CS S/T S/TK4P8G304EQ-AGC2LPDDR2POP 1688Gb128Mx32x2CS S/T S/T S/T K4E8E304EE-AGCE LPDDR3POP 1688Gb128Mx32x2CS S/T S/TK4E4E164EB-EGCE LPDDR3FBGA 1784Gb128Mx32x1CS S/T S/TKingston（金士顿）D2516EC4BXGGB DDR3FBGA 964Gb256Mx16S/T S/T S/T D/S D/S S/T S/T D/SPSC/Mira (力晶)P3P4GF3BLF-GGN DDR3FBGA 784Gb512Mx8D/S S/T S/T D/S D/S D/S D/S D/S P3P4GF4BLF-GGN DDR3FBGA 964Gb256Mx16S/T S/T S/T D/S S/T D/S D/S S/T P3P4GF4BLF-GDJ DDR3FBGA 964Gb256Mx16D/S S/T S/T D/S D/S D/S D/S D/S P3P2GF3BLF-AGGN DDR3FBGA 782Gb256Mx8S/TAllwinner Technology CO., Ltd.Etron （钰创）EM6GE16EW5B-15H DDR3FBGA 964Gb 256Mx16S/T S/T S/T D/S D/S D/S D/S D/S EM6GD08EWUA-15H DDR3FBGA 782Gb 256Mx8D/S D/S S/T D/S S/T D/S D/S S/T EM6GD08EWUA-12H DDR3FBGA 782Gb 256Mx8D/SD/S S/T D/S D/S D/S D/S D/SEM6GD16EWXC-12HDDR3FBGA 962Gb 128Mx16EM6GE16EWXC-12HDDR3FBGA 964Gb 256Mx16S/T D/S D/S EM6GD08EWUC-12H DDR3FBGA 782Gb 256Mx8S/T D/S D/S EM6GE08EW8C-12H DDR3FBGA 784Gb 512Mx8S/TD/S D/SEM6GE16EWXD-12H DDR3FBGA 964Gb 256Mx16SCSemicon （华芯）HXB15H2G800BF-15H DDR3FBGA 782Gb 256Mx8S/T S/T S/T D/S D/S D/S HXB15H2G160BF-15H DDR3FBGA 962Gb 128Mx16D/S S/T X X X X HXB15H4G160BF-15HDDR3FBGA 964Gb 256Mx16S/T S/T S/T D/S S/T S/T HXB15H4G800BF-15H DDR3FBGA 784Gb 512Mx8D/S D/S S/T D/S D/S D/S HXB15H4G800AF-15HDDR3FBGA 784Gb 512Mx8D/S D/S S/T D/S D/SD/S HXB13H4G160BF(L)-13K DDR3L FBGA 964Gb 256Mx16D/S D/SD/S D/S D/S S/T S/T D/SHXB15H2G800BF-13K DDR3FBGA 782Gb 256Mx8S/THXB15H2G160BF-13KDDR3FBGA 962Gb 128Mx16PI （补丁）PMF511808DBR-KADN DDR3FBGA 782Gb 256Mx8D/S D/S S/T D/S D/S D/S PMF512816BBR-KADN DDR3FBGA 964Gb 256Mx16S/T S/T S/T D/S D/S S/T S/T D/S PMF511808BBRDDR3FBGA 782Gb 256Mx8D/S D/S S/T D/S D/S D/S eorex （森富）EM47DM0888SBA-150DDR3FBGA 781Gb 128Mx8D/S D/S X X X XEM47EM0888SBA-150DDR3FBGA 782Gb 256Mx8D/S D/S S/T D/S D/S D/S EM47CM1688SBB-150DDR3FBGA 961Gb 64Mx16D/S D/S X X X X EM47EM1688SBA-150DDR3FBGA 964Gb 256Mx16D/S S/T S/T D/S D/S D/S EM47EM3288SBA-150DDR38Gb 256Mx32S/T D/S X X XXGT （创芯）GT8UB128M16HP DDR3FBGA 962Gb 128Mx16S/T S/T X D/S D/S D/S GT8UB128M16BP DDR3FBGA 962Gb 128Mx16D/S S/T X D/S D/S D/S GT8UB256M16BP DDR3FBGA 964Gb 256Mx16S/T S/T S/T D/S D/S S/T S/T D/S GT8UB256M8EN-BG DDR3FBGA 782Gb 256Mx8D/S D/S S/T D/S D/S D/S GT8UB512M8EN-BGDDR3FBGA 784Gb512Mx8D/SD/S S/T D/S D/S D/SEG EG1L256M88BA12LH DDR3FBGA 782Gb 256Mx8D/S D/S S/T D/S D/S D/SAllwinner Technology CO., Ltd. EGElixir N2CB2G80GN DDR3FBGA 782Gb256Mx8D/S S/T S/T D/S D/S D/S N2CB4G16CP-DI DDR3FBGA 964Gb256Mx16D/S D/S S/T D/S D/S D/S华聆 xeme H2A402G1666ADBC DDR3FBGA 962Gb128Mx16H2A402G0866CD3C DDR3FBGA 782Gb256Mx8H2A404G0866ED9C DDR3FBGA 784Gb512Mx8H2C402G1666ADBC DDR3FBGA 962Gb128Mx16H2C402G0866CD3C DDR3FBGA 782Gb256Mx8H2C402G0866BD3C DDR3FBGA 782Gb256Mx8H2C404G0866ADEC DDR3FBGA 784Gb512Mx8H2C404G1666ADFC DDR3FBGA 964Gb256Mx16S/T S/T S/T S/T H2C404G0866CD8C DDR3FBGA 784Gb512Mx8H2C402G1666BDBC DDR3FBGA 962Gb128Mx16X X H2A402G0866CD3C DDR3FBGA 782Gb256Mx8XGCAI GDB41A32ED7-D1S LPDDR2POP 1684Gb128Mx32x1CS GDB42A32ED7-D1S(25nm)LPDDR2POP 1688Gb128Mx32x2CS GDB42A32ED7-D1S(30nm)LPDDR2POP 1688Gb128Mx32x2CS。
amdcpu型号大全
型号核心数规格(主频/L2缓存/工艺) 报价涨跌闪龙双核2100+(散) 双核1800MHz/512KB/65nm 230速龙64 X2 4450e(散) 双核2300MHz/1MB/65nm/45W 320 - 速龙64 X2 4850e(散) 双核2500MHz/1MB/65nm/45W 390 - 速龙64 X2 5050e(盒) 双核2600MHz/1MB/65nm/45W 440 - 速龙64 X2 5000+(散) 双核2600MHz/1MB/65nm 330 -速龙64 X2 5200+(散) 双核2700MHz/1MB/65nm 355 -速龙64 X2 6000+(散) 双核3000MHz/2MB/90nm 365速龙X2 5000(盒) 双核2200MHz/1MB/45nm/VT395 -速龙II X2 215(散) 双核2700MHz/1MB/45nm 295 -速龙II X2 245(盒) 双核2900MHz/2MB/45nm 395 ↓15速龙II X2 250(盒) 双核3000MHz/2MB/45nm 425 -速龙II X3 435(盒) 三核2900MHz/1.5MB/45nm 535 -速龙II X3 440(盒) 三核3000MHz/1.5MB/45nm 580 -速龙II X4 605e(散) 四核2300MHz/2MB/45nm/45W650 新品速龙II X4 630(盒) 四核2800MHz/2MB/45nm730 -速龙II X4 635(盒) 四核2900MHz/2MB/45nm 850 - Phenom II X2 545(盒) 双核3000MHz/7MB/45nm 650 缺货Phenom II X2 550(盒) 双核3100MHz/7MB/45nm 655 - Phenom 8450(散) 三核2100MHz/1.5MB/65nm 410 - Phenom 8650(散) 三核2300MHz/1.5MB/65nm 440 - Phenom 9150e(散) 四核1800MHz/2MB/65nm 850 - Phenom 9350e(盒) 四核2000MHz/2MB/65nm 870 - Phenom 9550(盒) 四核2200MHz/2MB/65nm 890 缺货Phenom 9650(盒) 四核2300MHz/2MB/65nm 595 - Phenom II X3 710(散) 三核2600MHz/7.5MB/45nm 595 - Phenom II X3 710(盒) 三核2600MHz/7.5MB/45nm 695 -Phenom II X3 720(散) 三核2800MHz/7.5MB/45nm 720 -Phenom II X4 900e(盒) 四核2400MHz/6MB/45nm/65W 785 - Phenom II X4 905e(盒) 四核2500MHz/8MB/45nm/65W 805 - Phenom II X4 925(盒) 四核2800MHz/8MB/45nm935 ↓5Phenom II X4 945(盒) 四核3000MHz/8MB/45nm995 -Phenom II X4 955(散) 四核3200MHz/8MB/45nm -缺货Phenom II X4 955(盒) 四核3200MHz/8MB/45nm 1085 -Phenom II X4 965(盒) 四核3400MHz/8MB/45nm/140W 1270 Phenom II X6 1055T(盒) 六核2800MHz/6MB/45nm/TC 1900amd 公司的主要cpu 系列型号有：k5k6k6-2duronathlon xpsempronathlon 64opteron 等等amd cpu的独门秘术- hypertransport总线amd，这个成立于1969年、总部位于美国加利福尼亚州桑尼维尔的处理器厂商，经过多年不懈地与英特尔的抗争，终于小有成就了—凭借此前的athlonxp及目前k8处理器，amd这个品牌旗下的处理器产品已经成为了不少消费者心中的“最爱”。
诺基亚 N508 用户手册说明书
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3目录安全事项............... 6概述.. (9)密码功能...................... 9通过网络提供的诺基亚技术支持 (10)1.使用入门 (11)安装 UIM 卡和电池............................ 11为电池充电................ 13开机或关机................ 15正常操作位置 (15)2.您的手机 (17)按键与组件(正面)........................ 17按键与组件(侧面) (18)待机模式和快捷操作............................ 18键盘锁........................ 20数据传送.. (20)3.通话功能 (22)拨打和接听电话........ 22进行电话会议............ 22扬声器 (23)4.输入法 (24)中文输入法................ 24使用拼音输入法..... 24使用笔画输入法..... 26英文输入法................ 27传统英文输入法..... 27联想英文输入法.. (27)5.功能表功能 (29)信息 (29)目录4版权所有 © 2008 诺基亚。
笔记本CPU参数大全-真的很全
型号制程L2 主频FSB 核心虚拟化|超线程|节电|64位|防病毒T7600 65nm 4MB 2.33 667 2 Yes NO Yes Yes YesT7400 65nm 4MB 2.16 667 2 Yes NO Yes Yes YesT7200 65nm 4MB 2.00 667 2 Yes NO Yes Yes YesT5600 65nm 2MB 1.83 667 2 Yes NO Yes Yes YesT5500 65nm 2MB 1.66 667 2 NO NO Yes Yes YesT5300 65nm 2MB 1.73 533 2 NO NO Yes Yes YesT5200 65nm 2MB 1.60 533 2 NO NO Yes Yes YesL7400 65nm 4MB 1.50 667 2 Yes NO Yes Yes YesL7200 65nm 4MB 1.33 667 2 Yes NO Yes Yes YesT2700 65nm 2MB 2.33 667 2 Yes NO Yes NO YesT2600 65nm 2MB 2.16 667 2 Yes NO Yes NO YesT2500 65nm 2MB 2.00 667 2 Yes NO Yes NO YesT2450 65nm 2MB 2.00 533 2 Yes NO Yes NO YesT2400 65nm 2MB 1.83 667 2 Yes NO Yes NO YesT2350 65nm 2MB 1.86 533 2 NO NO Yes NO YesT2300 65nm 2MB 1.66 667 2 Yes NO Yes NO YesT2300E 65nm 2MB 1.66 667 2 NO NO Yes NO YesT2250 65nm 2MB 1.73 533 2 NO NO Yes NO YesL2500 65nm 2MB 1.83 667 2 Yes NO Yes NO YesL2400 65nm 2MB 1.66 667 2 Yes NO Yes NO YesT2350 65nm 2MB 1.86 533 2 NO NO Yes NO YesT2050 65nm 2MB 1.60 533 2 NO NO Yes NO YesL2300 65nm 2MB 1.50 667 2 Yes NO Yes NO YesU2400 65nm 2MB 1.06 533 2 Yes NO Yes NO YesU2500 65nm 2MB 1.20 533 2 Yes NO Yes NO YesIntel奔腾CPU型号制程L2 主频FSB 核心虚拟化|超线程|节电|64位|防病毒T2130 65nm 1MB 1.8 533 2 NO NO Yes NO YesT2080 65nm 1MB 1.73 533 2 NO NO Yes NO YesT2060 65nm 1MB 1.60 533 2 NO NO Yes NO YesT1400 65nm 2MB 1.83 667 1 NO NO Yes NO YesT1350 65nm 2MB 1.86 533 1 NO NO Yes NO YesT1300 65nm 2MB 1.66 667 1 NO NO Yes NO YesU1500 65nm 2MB 1.33 533 1 Yes NO Yes NO YesU1400 65nm 2MB 1.20 533 1 Yes NO Yes NO YesU1300 65nm 2MB 1.06 533 1 Yes NO Yes NO YesPM780 90nm 2MB 2.26 533 1 NO NO Yes NO YesPM770 90nm 2MB 2.13 533 1 NO NO Yes NO YesPM765 90nm 2MB 2.10 400 1 NO NO Yes NO NOPM760 90nm 2MB 2.00 533 1 NO NO Yes NO YesPM755 90nm 2MB 2.00 400 1 NO NO Yes NO NOPM750 90nm 2MB 1.86 533 1 NO NO Yes NO YesPM745A 90nm 2MB 1.80 400 1 NO NO Yes NO YesPM745 90nm 2MB 1.80 400 1 NO NO Yes NO NOPM740 90nm 2MB 1.73 533 1 NO NO Yes NO YesPM735A 90nm 2MB 1.70 400 1 NO NO Yes NO YesPM735 90nm 2MB 1.70 400 1 NO NO Yes NO NOPM730 90nm 2MB 1.60 533 1 NO NO Yes NO YesPM725A 90nm 2MB 1.60 400 1 NO NO Yes NO YesPM725 90nm 2MB 1.60 400 1 NO NO Yes NO NOPM715 90nm 2MB 1.50 400 1 NO NO Yes NO NOPM710 90nm 2MB 1.40 400 1 NO NO Yes NO NOPM705 130nm 1MB 1.50 400 1 NO NO Yes NO NOPM778 90nm 2MB 1.60 400 1 NO NO Yes NO YesPM758 90nm 2MB 1.50 400 1 NO NO Yes NO YesPM738 90nm 2MB 1.40 400 1 NO NO Yes NO NOPM718 130nm 1MB 1.30 400 1 NO NO Yes NO NOPM753 90nm 2MB 1.20 400 1 NO NO Yes NO YesPM733J 90nm 2MB 1.10 400 1 NO NO Yes NO YesPM733 90nm 2MB 1.10 400 1 NO NO Yes NO NOPM723 90nm 2MB 1.00 400 1 NO NO Yes NO NOPM713 130nm 1MB 1.10 400 1 NO NO Yes NO NO型号制程L2 主频FSB 核心虚拟化|超线程|节电|64位|防病毒CM520 65nm 1MB 1.60 533 1 NO NO NO Yes YesCM450 65nm 1MB 2.00 533 1 NO NO NO NO YesCM440 65nm 1MB 1.86 533 1 NO NO NO NO YesCM430 65nm 1MB 1.73 533 1 NO NO NO NO YesCM420 65nm 1MB 1.60 533 1 NO NO NO NO YesCM410 65nm 1MB 1.46 533 1 NO NO NO NO YesCM390 90nm 1MB 1.70 400 1 NO NO NO NO YesCM380 90nm 1MB 1.60 400 1 NO NO NO NO YesCM370 90nm 1MB 1.50 400 1 NO NO NO NO YesCM360J 90nm 1MB 1.40 400 1 NO NO NO NO YesCM360 90nm 1MB 1.40 400 1 NO NO NO NO NOCM350J 90nm 1MB 1.30 400 1 NO NO NO NO YesCM350 90nm 1MB 1.30 400 1 NO NO NO NO NOCM340 130nm 512KB 1.50 400 1 NO NO NO NO NOCM330 130nm 512KB 1.40 400 1 NO NO NO NO NOCM320 130nm 512KB 1.30 400 1 NO NO NO NO NOCM310 130nm 512KB 1.20 400 1 NO NO NO NO NOCM443 65nm 1MB 1.20 533 1 NO NO NO NO YesCM423 65nm 1MB 1.06 533 1 NO NO NO NO YesCM383 90nm 1MB 1.00 400 1 NO NO NO NO YesCM373 90nm 512KB 1.00 400 1 NO NO NO NO YesCM353 90nm 512KB 0.90 400 1 NO NO NO NO NOCM333 130nm 12KB 0.90 400 1 NO NO NO NO NO-----------------------------------------------------------AMD Turion 64 X2 TL炫龙64位双核CPU-均支持DDR2内存型号制程 L1 L2 主频 FSB 核心功耗TL50 90nm 128KB*2 256KB*2 1.6G 800MHz 2 31WTL52 90nm 128KB*2 512KB*2 1.6G 800MHz 2 31WTL56 90nm 128KB*2 512KB*2 1.8G 800MHz 2 33W(31W)TL60 90nm 128KB*2 512KB*2 2.0G 800MHz 2 35W(31W)TL64 90nm 128KB*2 512KB*2 2.2G 800MHz 2 35WTL66 90nm 128KB*2 512KB*2 2.3G 800MHz 2 35W-----------------------------------------------------------AMD Turion 64 MK炫龙64位单核CPU-均支持DDR2内存型号制程 L1 L2 主频 FSB 核心功耗MK-36 90nm 128KB 512KB 2.0G 800MHz 1 31WMK-37 90nm 128KB 1MB 2.0G 800MHz 1 31WMK-38 90nm 128KB 512KB 2.2G 800MHz 1 31W-----------------------------------------------------------AMD Turion 64 MT炫龙64位单核CPU-支持DDR内存型号制程 L1 L2 主频 FSB 核心功耗MT-28 90nm 128KB 512KB 1.6G 800MHz 1 25WMT-30 90nm 128KB 1MB 1.6G 800MHz 1 25WMT-32 90nm 128KB 512KB 1.8G 800MHz 1 25WMT-34 90nm 128KB 1MB 1.8G 800MHz 1 25WMT-37 90nm 128KB 1MB 2.0G 800MHz 1 25WMT-40 90nm 128KB 1MB 2.2G 800MHz 1 25W-----------------------------------------------------------AMD Mobile Athlon 64 X2 移动式双核速龙64位CPU-支持DDR-2 800内存型号制程 L1 L2 主频 FSB 核心功耗TK-53 65nm 128KB 256KB*2 1.7G 800MHz 2 31WTK-55 65nm 128KB 256KB*2 1.8G 800MHz 2 31WCPU参数大全1 AMD系列：-----------------------------------------------------------------------------------规格核心代号制造工艺主频外频倍频前端总线（fhao）二级缓存（l2）电压duron1.4g appelbred0.13 1.4g133m10.5266m64k 1.5vduron1.6g appelbred0.13 1.6g133m12266m64k 1.5vduron1.8g appelbred0.13 1.8g133m13.5266m64k 1.5v这是amd2003年中推出的新毒龙系列处理器，跟以前的老毒龙比，规格变化不大，l2都是64k，区别主要是前端总线从200mhz提升到266mhz！工艺从0.18微米换成0.13微米，总体性能提升不少！这系列的价钱十分便宜，但性能不会比celeron系列差！加上超频性能强劲、功耗低、而且还有可能改造成athlom xp的特点，绝对是低端的超值首选！-------------------------------------------------------------------------------------------------规格核心代号制造工艺主频外频倍频前端总线（fhao）二级缓存（l2）电压athlom xp1500+ palomino0.18 1.33g133m10266m256k 1.75vathlom xp1700+ palomino0.18 1.4g133m10.5266m256k 1.75vathlom xp1700+ palomino0.18 1.47g133m11266m256k 1.75vathlom xp1800+ palomino0.18 1.53g133m11.5266m256k 1.75vathlom xp1900+ palomino0.18 1.6g133m12266m256k 1.75vathlom xp2000+ palomino0.18 1.67g133m12.5266m256k 1.75vathlom xp2100+ palomino0.18 1.73g133m13266m256k 1.75v老核心的athlom xp，超频性能一般，而且基本是锁了倍频的，超频难道更大！加上是0.18微米的工艺，发热量也大一点。
HP5082-7740中文资料
Features• Industry Standard Size • Industry Standard Pinout 7.62 mm (0.300 inch) DIP Leads on 2.54 mm (0.100 inch) Centers • Choice of ColorsRed, AlGaAs Red, HighEfficiency Red, Yellow, Green • Excellent Appearance Evenly Lighted SegmentsGray Package Gives Optimum Contrast±50° Viewing Angle • Design Flexibility Common Anode or Common Cathode Single DigitsLeft or Right Hand Decimal Point±1. Overflow Character• Categorized for Luminous IntensityYellow and Green Categorized for ColorUse of Like Categories Yields a Uniform Display • High Light Output • High Peak Current• Excellent for Long Digit String Multiplexing • Intensity and Color Selection Available See Intensity and ColorSelected Displays Data Sheet • Sunlight Viewable AlGaAsDescriptionThe 7.6 mm (0.3 inch) and 10.9mm (0.43 inch) LED sevenRed AlGaAs [1]HER [1]Yellow Green Package 5082-Red HDSP-5082-5082-HDSP-DescriptionDrawing77307610762036007.6 mm Common Anode Left Hand Decimal A 77317611762136017.6 mm Common Anode Right Hand Decimal B 77407613762336037.6 mm Common Cathode Right Hand Decimal C 77367616762636067.6 mm Universal ±1. Overflow Right Hand Decimal [2]D 7750E15076507660460010.9 mm Common Anode Left Hand Decimal E 7751E15176517661460110.9 mm Common Anode Right Hand Decimal F 7760E15376537663460310.9 mm Common Cathode Right Hand Decimal G 7756E15676567666460610.9 mm Universal ±1. Overflow Right Hand Decimal [2]HNotes:1. These displays are recommended for high ambient light operation. Please refer to the HDSP-E10X AlGaAs and HDSP-335X HER data sheet for low current operation.2. Universal pinout brings the anode and cathode of each segment’s LED out to separate pins. See internal diagram D.3. Universal pinout brings the anode and cathode of each segment’s LED out to separate pins. See internal diagram H.Devices5082-761X Series 5082-762X Series 5082-765X Series 5082-766X Series 5082-773X Series 5082-77405082-775X Series 5082-7760HDSP-360X Series HDSP-460X Series HDSP-E15X Series7.6 mm (0.3 inch)/10.9 mm (0.43 inch) Seven Segment Displays Technical Datasegment displays are designed for viewing distances up to 3 metres (10 feet) and 5 metres (16 feet).These devices use an industry standard size package andpinouts. All devices are available as either common anode or common cathode.元器件交易网2ambient design. The low current displays are ideal for portable applications. The high light ambient displays are ideal for high light ambients or long string lengths. For additional informa-tion see the Low Current Seven Segment Displays, or High Light Ambient Seven Segment Displays data sheets.NOTES;1. DIMENSIONS IN MILLIMETRES AND (INCHES).2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY.3. REDUNDANT ANODES.4. UNUSED DP POSITION.5. SEE INTERNALCIRCUIT DIAGRAM.6. REDUNDANT CATHODE.7. SEE PART NUMBER TABLE FOR L.H.D.P.AND R.H.D.P.DESIGNATION.8. FOR YELLOW AND GREEN DEVICES ONLY.Package DimensionsThese displays are ideal for most applications. Pin for pin equiva-lent displays are also available in a low current or high light元器件交易网3Device Test Series ParameterSymbol Min.Typ.Max.Units Conditions 5082-773X Luminous Intensity/Segment [1,2]360770µcdI F = 20 mA5082-774X (Digit Average)I V5082-775X 3601100µcd I F = 20 mA 5082-776XForward Voltage/Segment or DP V F 1.6 2.0V I F = 20 mAPeak WavelengthλPEAK 655nm Dominant Wavelength [3]λd 640nm AllReverse Voltage/Segment or DP [4]V R 3.012V I R = 100 µA Temperature Coefficient of ∆V F /°C -2mV/°C V F /Segment or DP Thermal Resistance LED R θJ-PIN280°C/W/SegJunction-to-PinElectrical/Optical Characteristics at T A = 25°CRedDevice SeriesParameterSymbol Min.Typ.Max.Units Test Conditions Luminous Intensity/Segment [1,2,5]I V8.515.0mcd I F = 20 mA (Digit Average)1.8VI F = 20 mAForward Voltage/Segment or DPV F2.03.0V I F = 100 mAHDSP-E15XPeak Wavelength λPEAK 645nm Dominant Wavelength [3]λd 637nm Reverse Voltage/Segment or DP [4]V R 3.015V I R = 100 µA Temperature Coefficient of ∆V F /°C -2mV/°C V F /Segment or DPThermal Resistance LED Junction-R θJ-PIN340°C/W/Segto-PinAlGaAs RedHigh Efficiency RedDeviceSeries Parameter Symbol Min.Typ.Max.Units Test Conditions 5082-761X Luminous Intensity/Segment[1,2,6]340800µcd I F = 5 mA (Digit Average)I V5082-765X3401115µcd I F = 5 mA Forward Voltage/Segment or DP V F 2.1 2.5V I F = 20 mAPeak WavelengthλPEAK635nmDominant Wavelength[3]λd626nm AllReverse Voltage/Segment or DP[4]V R 3.030V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED RθJ-PIN280°C/WJunction-to-PinYellowDeviceSeries Parameter Symbol Min.Typ.Max.Units Test Conditions 5082-762X Luminous Intensity/Segment[1,2]205620µcd I F = 5 mA (Digit Average)I V5082-766X290835µcd I F = 5 mA Forward Voltage/Segment or DP V F 2.2 2.5V I F = 20 mAPeak WavelengthλPEAK583nmDominant Wavelength[3,7]λd581.5586592.5nm AllReverse Voltage/Segment or DP[4]V R 3.040V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED RθJ-PIN280°C/W/SegJunction-to-PinHigh Performance GreenDevice Test Series ParameterSymbol Min.Typ.Max.Units Conditions HDSP-360X Luminous Intensity/Segment [1,2]8602700µcdI F = 10 mA(Digit Average)I VHDSP-460X10304000µcd I F = 10 mA Forward Voltage/Segment or DP V F 2.1 2.5V I F = 10 mAPeak WavelengthλPEAK 566nm Dominant Wavelength [3,7]λd 571577nm AllReverse Voltage/Segment or DP [4]V R 3.050V I R = 100 µA Temperature Coefficient of ∆V F /°C -2mV/°C V F /Segment or DP Thermal Resistance LED R θJ -PIN280°C/W/SegJunction-to-PinNotes:1. Device case temperature is 25°C prior to the intensity measurement.2. The digits are categorized for luminous intensity. The intensity category is designated by a letter on the side of the package.3. The dominant wavelength, λd , is derived from the CIE chromaticity diagram and is that single wavelength which defines the color of the device.4. Typical specification for reference only. Do not exceed absolute maximum ratings.5. For low current operation, the AlGaAs HDSP-E10X series displays are recommended. They are tested at 1 mA dc/segment and are pin for pin compatible with the HDSP-E15X series.6. For low current operation, the HER HDSP-335X series displays are recommended. They are tested at 2 mA dc/segment and are pin for pin compatible with the 5082-7650 series.7. The Yellow (5082-7620/7660) and Green (HDSP-3600/4600) displays are categorized for dominant wavelength. The category is designated by a number adjacent to the luminous intensity category letter.Red, AlGaAs RedFigure 1. Maximum Tolerable Peak Current vs.Pulse Duration – Red.Red, AlGaAs Red (Continued)Data subject to change.Copyright © 1999 Agilent Technologies, Inc.Obsoletes 5954-0870 (11/84), 5954-0874(12/84)5963-7394E (11/99)元器件交易网。
五舟 AMD 高性能 AI 超算服务器 S748E5 用户手册说明书
用户手册五舟AMD高性能AI超算服务器S748E5广州广电五舟科技股份有限公司声明感谢您选择广电五舟产品：•本手册的用途在于帮助您正确地使用广电五舟服务器产品（以下称“本产品”），在安装和第一次使用本产品前，请您务必先仔细阅读随机配送的所有资料，特别是本手册中所提及的注意事项。
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7.6 mm (0.3 inch) Micro Bright Seven Segment Displays Technical DataFeatures• Available with Colon for Clock Display • Compact Package 0.300 x 0.500 inchesLeads on 2.54 mm (0.1 inch)Centers• Choice of Colors AlGaAs Red, HighEfficiency Red, Yellow, Green,Orange• Excellent Appearance Evenly Lighted Segments Mitered Corners on Segments Surface Color Gives Optimum Contrast±50° Viewing Angle • Design FlexibilityCommon Anode or Common CathodeRight Hand Decimal Point ±1. Overflow Character • Categorized for Luminous IntensityYellow and Green Categorized for ColorUse of Like Categories Yields a Uniform Display • High Light Output • High Peak Current• Excellent for Long Digit String Multiplexing • Intensity and Color Selection Available See Intensity and ColorSelected Displays Data Sheet • Sunlight Viewable AlGaAsDescriptionThe 7.6 mm (0.3 inch) LED seven segment displays are designed for viewing distances up to 3 metres (10 feet). These devices use an industry standard size package and pinout. Both the numeric andDevicesOrange AlGaAs [1]HER [1]Yellow [1]Green [1]Package HDSP-HDSP-HDSP-HDSP-HDSP- DescriptionDrawingA401A151750174017801Common Anode Right A Hand Decimal750274027802Common Anode Right Hand B Decimal, Colon A403A153750374037803Common Cathode Right C Hand Decimal750474047804Common Cathode Right Hand D Decimal, ColonA157750774077807Common Anode ±1. Overflow E A158750874087808Common Cathode ±1. OverflowFNote:1. These displays are recommended for high ambient light operation. Please refer to the HDSP-A10X AlGaAs, HDSP-335X HER, HDSP-A80X Yellow, and HDSP-A90X Green data sheet for low current operation.HDSP-740x Series HDSP-750x Series HDSP-780x Series HDSP-A15x Series HDSP-A40x Series±1. overflow devices feature a right hand decimal point. All devices are available as either common anode or common cathode.These displays are ideal for most applications. Pin for pin equiv-alent displays are also available in a low current design. The low current displays are ideal forportable applications. For additional information see the Low Current Seven Segment Displays.Part Numbering SystemNotes:1. For codes not listed in the figure above, please refer to the respective datasheet or contact your nearest Agilent representative for details.2. Bin options refer to shippable bins for a part number. Color and Intensity Bins are typically restricted to 1bin per tube (exceptions may apply). Please refer to respective datasheet for specific bin limit information.5082 -X X X X-X X X X X HDSP-X X X X-X X X X XMechanical Options [1]00: No Mechanical OptionColor Bin Options [1,2]0: No Color Bin Limitation3: Color Bins 3- and 3+ only (applicable for Yellow devices only)Z: Color Bins 2- and 3+ only (applicable for Yellow devices only)Maximum Intensity Bin [1,2]0: No Maximum Intensity Bin Limitation Minimum Intensity Bin [1,2]0: No Minimum Intensity Bin Limitation Device Configuration/Color [1]1: Common Anode 2: Common Anode 3: Common Cathode 4: Common CathodeDevice Specific Configuration [1]Refer to Respective DatasheetPackage [1]A: 7.6 mm (0.3 inch) Single Digit Seven Segment DisplayPackage Dimensions NOTES:1. ALL DIMENSIONS IN MILLIMETRES (INCHES).2. MAXIMUM.3. ALL UNTOLERANCED DIMENSIONS AREFOR REFERENCE ONLY.4. REDUNDANT ANODES.5. REDUNDANT CATHODES.6. FOR HDSP-7400/-7800 SERIES PRODUCT ONLY.Device Series HDSP-ParameterSymbol Min.Typ.Max.Units Test Conditions Luminous Intensity/Segment [1,2,5]I V6.914.0mcd I F = 20 mA (Digit Average)1.8VI F = 20 mAForward Voltage/Segment or DPV F2.03.0V I F = 100 mAA15xPeak Wavelength λPEAK 645nm Dominant Wavelength [3]λd 637nm Reverse Voltage/Segment or DP [4]V R 3.015.0V I R = 100 µA Temperature Coefficient of ∆V F /°C -2mV/°C V F /Segment or DPThermal Resistance LED Junction-R θJ-PIN255°C/W/Segto-PinAlGaAs RedElectrical/Optical Characteristics at T A = 25°C Absolute Maximum RatingsAlGaAs Red HER/Orange Yellow GreenHDSP-A150HDSP-7500/-A40X HDSP-7400HDSP-7800DescriptionSeriesSeries SeriesSeriesUnits Average Power per Segment or DP 9610580105mW Peak Forward Current per 160[1]90[3]60[5]90[7]mA Segment or DPDC Forward Current per 40[2]30[4]20[6]30[8]mASegment or DPOperating Temperature Range –20 to +100[9]–40 to +100°CStorage Temperature Range –55 to +100°C Reverse Voltage per Segment or DP 3.0V Lead Solder Temperature for 3Seconds (1.59 mm [0.063 in.] 260°Cbelow seating plane)Notes:1. See Figure 1 to establish pulsed conditions.2. Derate above 46°C at 0.54 mA/°C.3. See Figure 6 to establish pulsed conditions.4. Derate above 53°C at 0.45 mA/°C.5. See Figure 7 to establish pulsed conditions.6. Derate above 81°C at 0.52 mA/°C.7. See Figure 8 to establish pulsed conditions.8. Derate above 39°C at 0.37 mA/°C.9. For operation below –20°C, contact your local Agilent components sales office or an authorized distributor.High Efficiency RedDeviceSeriesHDSP-Parameter Symbol Min.Typ.Max.Units Test Conditions Luminous Intensity/Segment[1,2,6]360980I F = 5 mA(Digit Average)I Vµcd5390I F = 20 mA Forward Voltage/Segment or DP V F 2.0 2.5V I F = 20 mA 750x Peak WavelengthλPEAK635nmDominant Wavelength[3]λd626nmReverse Voltage/Segment or DP[4]V R 3.030V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED Junction-RθJ-PIN200°C/W/Segto-PinOrangeDeviceSeriesHDSP-Parameter Symbol Min.Typ.Max.Units Test Conditions Luminous Intensity/Segment[1,2,6]I V0.70mcd I F = 5 mA(Digit Average)Forward Voltage/Segment or DP V F 2.0 2.5V I F = 20 mA A40x Peak WavelengthλPEAK600nmDominant Wavelength[3]λd603nmReverse Voltage/Segment or DP[4]V R 3.030V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED Junction-RθJ-PIN200°C/W/Segto-PinYellowDeviceSeriesHDSP-Parameter Symbol Min.Typ.Max.Units Test Conditions Luminous Intensity/Segment[1,2,7]225480I F = 5 mA(Digit Average)I Vµcd2740I F = 20 mA Forward Voltage/Segment or DP V F 2.2 2.5V I F = 20 mA 740x Peak WavelengthλPEAK583nmDominant Wavelength[3,9]λd581.5586592.5nmReverse Voltage/Segment or DP[4]V R 3.050.0V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED Junction-RθJ-PIN200°C/W/Segto-PinHigh Performance GreenDeviceSeriesHDSP-Parameter Symbol Min.Typ.Max.Units Test Conditions Luminous Intensity/Segment[1,2,8]8603000I F = 10 mA(Digit Average)I Vµcd6800I F = 20 mA Forward Voltage/Segment or DP V F 2.1 2.5V I F = 10 mA 780x Peak WavelengthλPEAK566nmDominant Wavelength[3,9]λd571577nmReverse Voltage/Segment or DP[4]V R 3.050.0V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED Junction-RθJ-PIN200°C/W/Segto-PinNotes:1. Case temperature of device immediately prior to the intensity measurement is 25°C.2. The digits are categorized for luminous intensity. The intensity category is designated by a letter on the side of the package.3. The dominant wavelength, λd, is derived from the CIE chromaticity diagram and is that single wavelength which defines the color ofthe device.4. Typical specification for reference only. Do not exceed absolute maximum ratings.5. For low current operation the AlGaAs HDSP-A101 series displays are recommended.6. For low current operation the HER HDSP-7511 series displays are recommended.7. For low current operation the Yellow HDSP-A801 series displays are recommended.8. For low current operation the Green HDSP-A901 series displays are recommended.9. The yellow (HDSP-7400) and Green (HDSP-7800) displays are categorized for dominant wavelength. The category is designated by anumber adjacent to the luminous intensity category letter.AlGaAs Redt – PULSE DURATION – µs P101100R A T I O O F M A X I M U M O P E R A T I N G P E A K C U R R E N T T O T E M P E R A T U R E D E R A T E D M A X I M U M D C C U R R E N TI P E A K F I M A X DC Figure 4. Relative Luminous Intensity vs. DC Forward Current.Figure 2. Maximum Allowable DC Current per Segment as a Function of Ambient Temperature.Figure 1. Maximum Allowed Peak Current vs.Pulse Duration – AlGaAs Red.Figure 5. Relative Efficiency (LuminousIntensity per Unit Current) vs. Peak Current.Figure 3. Forward Current vs.Forward Voltage.T A – AMBIENT TEMPERATURE – °C I D C M A X . – M A X I M U M D C C U R R E N T P E R S E G M E N T– m AV F – FORWARD CURRENT – VI F – F O R W A R D C U R R E N T P E R S E G M E N T – m AI PEAK – PEAK FORWARD CURRENT PER SEGMENT – mAηP E A K – N O R M A L I Z E D R E L A T I V E E F F I C I E N C YI F – FORWARD CURRENT PER SEGMENT – mA R E L A T I V E L U M I N O U S I N T E N S I T Y (N O R M A L I Z E D T O 1 A T 20 m A )Figure 12. Relative Efficiency (Luminous Intensity per Unit Current) vs. Peak Current.ηP E A K – R E L A T I V E E F F I C I E N C Y (N O R M A L I Z E D T O 1 A T 5 m A F O R H E R ,O R A N G E A N D Y E L L O W , A N D 10 m A F O R G R E E N )I PEAK – PEAK FORWARD CURRENTPER SEGMENT – mAHER, Yellow, Green, OrangeFigure 6. Maximum Tolerable Peak Current vs.Pulse Duration – HER, Orange.Figure 7. Maximum Tolerable Peak Current vs. Pulse Duration – Yellow.Figure 10. Forward Current vs.Forward Voltage Characteristics.Figure 11. Relative LuminousIntensity vs. DC Forward Current.Figure 8. Allowable Peak Current vs.Pulse Duration – Green.Figure 9. Maximum Allowable DC Current per Segment as a Function of Ambient Temperature.R A T I O O F M A X I M U M O P E R A T I N G P E A K C U R R E N T T O T E M P E R A T U R E D E R A T E D D C C U R R E N TI P E A K F I M A X D C t – PULSE DURATION – µs P 101100DCR A T I O O F M A X I M U M O P E R A T I N G P E A K C U R R E N T T O T E M P E R A T U R E D E R A T E D D C C U R R E N TI P E A K FI M A X D C t – PULSE DURATION – µs P101100R A T I O O F M A X I M U M O P E R A T I N G P E A K C U R R E N T T O T E M P E R A T U R E D E R A T E D D C C U R R E N TI P E A K FI M A X D C t – PULSE DURATION – µs P10110040051015202530352010090807060504030T – AMBIENT TEMPERATURE – °C AI M A X –M A X I M U M D C C U R R E N T P E R S E G M E N T – m AD C120110504510080604020I – F O R W A R D C U R R E N T P E R S E G M E N T – m A FV – FORWARD VOLTAGE – V F R E L A T I V E L U M I N O U S I N T E N S I T Y (N O R M A L I Z E D T O 1 A T 5 m A F O R H E R A N D )t (Y E L L O W A N D T O1 A T 10 m A F O R G R E E N )1510205301025I – FORWARD CURRENT PER SEGMENT – mA FHDSP-A15x IV Bin Category Min.Max.M 7.0713.00N 10.6019.40O 15.9029.20P 23.9043.80Q 35.8065.60Intensity Bin Limits (mcd)AlGaAs RedHDSP-750x IV Bin Category Min.Max.B 0.3420.630C 0.5160.946D 0.774 1.418E 1.160 2.127F 1.740 3.190G 2.610 4.785H 3.9157.177HERHDSP-740x IV Bin Category Min.Max.B 0.2290.387C 0.3170.582D 0.4760.872E 0.714 1.311F 1.073 1.967G 1.609 2.950H 2.4134.425YellowHDSP-780x IV Bin Category Min.Max.H 0.86 1.58I 1.29 2.37J 1.94 3.55K 2.90 5.33L 4.378.01GreenOrangeHDSP-A40XIV Bin Category Min.Max.A 0.2840.433B 0.3540.541C 0.4430.677D 0.5540.846E 0.692 1.057F 0.856 1.322G 1.082 1.652H 1.352 2.066I 1.692 2.581J 2.114 3.227K 2.641 4.034L 3.300 5.042M 4.127 6.303N 5.1577.878Color CategoriesNote:All categories are established for classification of products. Products may not be available in all categories. Please contact your Agilent representatives for further clarification/information.Contrast EnhancementFor information on contrastenhancement, please seeApplication Note 1015.Soldering/CleaningCleaning agents from the ketonefamily (acetone, methyl ethylketone, etc.) and from thechlorinated hydrocarbon family(methylene chloride, trichloro-ethylene, carbon tetrachloride,etc.) are not recommended forcleaning LED parts. All of thesevarious solvents attack or dissolvethe encapsulating epoxies used toform the package of plastic LEDparts.For further information onsoldering LEDs, please refer toApplication Note 1027.元器件交易网/semiconductorsFor product information and a complete list ofdistributors, please go to our web site.For technical assistance call:Americas/Canada: +1 (800) 235-0312 or(408) 654-8675Europe: +49 (0) 6441 92460China: 10800 650 0017Hong Kong: (+65) 271 2451India, Australia, New Zealand: (+65) 271 2394Japan: (+81 3) 3335-8152(Domestic/Interna-tional), or 0120-61-1280(Domestic Only)Korea: (+65) 271 2194Malaysia, Singapore: (+65) 271 2054Taiwan: (+65) 271 2654Data subject to change.Copyright © 2002 Agilent Technologies, Inc.Obsoletes 5988-0382ENFebruary 11, 20025988-4434EN。