2SK3568

0
0
0
10
20
16
ID – VDS
8
COMMON SOURCE
Tc = 25°C
PULSE TEST
5.5
5.2
12
5
4.75 8
4.5 4
VGS = 4 V
0
0
10
20
30
40
50
60
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
ID – VGS
24
COMMON SOURCE 20 VDS = 20 V
Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V ID = 1 mA PULSE TEST
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
PD – Tc
50
40
30
20
10
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Total gate charge Gate-source charge Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
CAPACITANCE C (pF)
10000 1000 100
CAPACITANCE – VDS
Ciss Coss
10 COMMON SOURCE VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE VDS (V)
GATE THRESHOLD VOLTAGE Vth (V)
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2006-11-06
2SK3568
Electrical Characteristics (Ta = 25°C)
Characteristics
ID – VDS
12
5.2
5
10,15
6
10 COMMON SOURCE
Tc = 25°C
8
PULSE TEST
4.75 6
4
4.5
2
4.25
VGS = 4V
0
0
2
4
6
8
10
12
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
2SK3568
24 10,15
4 6
3 2
0
0
4
8
12
16
20
24
GATE-SOURCE VOLTAGE VGS (V)
FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S)
⎪Yfs⎪ – ID
100
10
1
0.1 0.1
Tc = −55°C
25 100
COMMON SOURCE VDS = 20 V PULSE TEST
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
PULSE TEST
16
12
8
100
Tc = −55°C
4 25
0
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
VDS – VGS
12 COMMON SOURCE Tc = 25℃
10 PULSE TEST
8
6
ID = 12 A
DRAIN REVERSE CURRENT IDR (A)
2SK3568
IDR – VDS
100 COMMON SOURCE Tc = 25°C PULSE TEST
10
1 10
5 3
1
VGS = 0, −1 V
0.1
0
−0.2
−0.4 −0.6 −0.8
−1.0 −1.2
DRAIN-SOURCE VOLTAGE VDS (V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
°C/W °C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
1
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.3 mH, IAR = 12 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
1
10
100
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω)
RDS (ON) – ID
10 COMMON SOURCE Tc = 25°C PULSE TEST
1 VGS = 10 V､15V
0.1
0.1
1
10
100
DRAIN CURRENT ID (A)
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch-c) Rth (ch-a)
3.125 62.5
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Symbol
IDR IDRP VDSF
trr Qrr
Test Condition
⎯
⎯ IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
12
A
⎯
⎯
48
A
⎯
⎯
−1.7
V
⎯ 1200 ⎯
ns
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID
IDP
PD
EAS
IAR EAR Tch Tstg
500
V
500
V
±30
VLeabharlann 12A 4840
W
364
mJ
12
A
4
mJ
150
°C
-55~150
°C
1: Gate 2: Drain 3: Source
DRAIN-SOURCE VOLTAGE VDS (V)
DYNAMIC INPUT / OUTPUT CHARACTERISTICS
500
20
VDS
400
16
300
12
400 VDD = 100 V
200
8
200 Common source
VGS 100
ID = 12 A
Tc = 25°C
4
Pulse test