STB3NC90Z-1中文资料

1/11January 2001STP3NC90Z - STP3NC90ZFPSTB3NC90Z-1N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAKZener-Protected PowerMESH™III MOSFETs TYPICAL R DS (on) = 3.2ΩsEXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES s 100% AVALANCHE TESTEDs VERY LOW GATE INPUT RESISTANCE sGATE CHARGE MINIMIZEDDESCRIPTIONThe third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar-rangement gives extra ESD capability with higher rug-gedness performance as requested by a large variety of single-switch applications.APPLICATIONSs SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating areaTYPE V DSS R DS(on)I D STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1900V< 3.5Ω3.5 ASymbol ParameterValueUnitSTP(B)3NC90Z(-1)STP3NC90ZFPV DS Drain-source Voltage (V GS = 0)900V V DGR Drain-gate Voltage (R GS = 20 k Ω)900V V GS Gate- source Voltage± 25VI D Drain Current (continuos) at T C = 25°C 3.5 3.5(*)A I D Drain Current (continuos) at T C = 100°C 2.2 2.2(*)A I DM (q )Drain Current (pulsed)1414A P TOT Total Dissipation at T C = 25°C 10035W Derating Factor 0.80.28W/°C I GS Gate-source Current (*)±50mA V ESD(G-S)Gate source ESD(HBM-C=100pF, R=15K Ω) 2.5KV dv/dt Peak Diode Recovery voltage slope 3V/ns V ISO Insulation Withstand Voltage (DC)--2000V T stg Storage Temperature–65 to 150°C T jMax. Operating Junction Temperature150°C (1)I SD ≤3.5A, di/dt ≤100A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAX (*).Limited only by maximum temperature allowedTO-22012TO-220FP123I2PAKSTP3NC90Z/FP/STB3NC90Z-12/11THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMICTO-220 / I2PAKTO-220FP Rthj-case Thermal Resistance Junction-case Max 1.253.57°C/W Rthj-amb Thermal Resistance Junction-ambient Max 62°C/W Rthc-sinkThermal Resistance Case-sink Typ0.1°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)3.5A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)220mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSSDrain-sourceBreakdown VoltageI D = 250 µA, V GS = 0900V ∆BV DSS /∆T J Breakdown Voltage Temp.CoefficientI D = 1 mA, V GS = 01V/°C I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating1µA V DS = Max Rating, T C = 125 °C 50µA I GSSGate-body Leakage Current (V DS = 0)V GS = ±20V±10µASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250µA 345V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 1.75 A 3.23.5ΩI D(on)On State Drain CurrentV DS > I D(on) x R DS(on)max, V GS =10V3.5ASymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS > I D(on) x R DS(on)max, I D =1.75A3S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 01250pF C oss Output Capacitance 78pF C rssReverse Transfer Capacitance7pF3/11STP3NC90Z/FP/STB3NC90Z-1ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODEGATE-SOURCE ZENER DIODENote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.3.∆V BV = αT (25°-T) BV GSO (25°)PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)Turn-on Delay Time Rise Time V DD = 450 V, I D = 1.5 A R G =4.7Ω V GS = 10V (see test circuit, Figure 3)28ns t r 14ns Q g Total Gate Charge V DD = 720V, I D = 3A,V GS = 10V2738nC Q gs Gate-Source Charge 8nC Q gdGate-Drain Charge10nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t r(Voff)Off-voltage Rise TimeV DD = 720V, I D = 3 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 5)16ns t f Fall Time 10ns t cCross-over Time18nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 3.5A I SDM (2)Source-drain Current (pulsed)14A V SD (1)Forward On Voltage I SD = 3 A, V GS = 0 1.6V t rr Reverse Recovery Time I SD = 3 A, di/dt = 100A/µs, V DD = 100V, T j = 150°C (see test circuit, Figure 5)712ns Q rr Reverse Recovery Charge 4450µC I RRMReverse Recovery Current13ASymbol ParameterTest ConditionsMin.Typ.Max.Unit BV GSO Gate-Source Breakdown VoltageIgs=± 1mA (Open Drain)25V αT Voltage Thermal Coefficient T=25°C Note(3) 1.310-4/°C RzDynamic ResistanceI D = 50 mA90ΩSTP3NC90Z/FP/STB3NC90Z-14/11Output Characteristics5/11STP3NC90Z/FP/STB3NC90Z-1TransconductanceSTP3NC90Z/FP/STB3NC90Z-1Source-drain Diode Forward Characteristics6/117/11STP3NC90Z/FP/STB3NC90Z-1Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadSTP3NC90Z/FP/STB3NC90Z-18/11STP3NC90Z/FP/STB3NC90Z-19/11STP3NC90Z/FP/STB3NC90Z-110/11元器件交易网STP3NC90Z/FP/STB3NC90Z-1Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2000 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.11/11。