Plastic-Electronics

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有机光电材料

有机光电材料

Design, Fabrication, and Performance Investigation of OrganicOptoelectronic DevicesChong-an DiABSTRACTOrganic optoelectronic materials and devices, which is also called …plastic electronics‟, att rached focus attention in past decade due to their potential application in large area and low cost flexible displays, solid-state lighting, radio frequency identification (RFID) cards and electronic papers etc. As important parts of organic optoelectronic devices, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic light-emitting transistors (OLEFTs) have made great achievements. The performance of these optoelectronic devices depends not only on the properties of the organic semiconductors involved, but is also dramatically affected by the properties of other functional layers and the nature of the interfaces present. Therefore, interface engineering, a novel approach towards high-performance OFETs, is a vital task for organic optoelectronic devices. Electrode/organic interfaces, dielectric/organic interfaces, organic/organic interfaces and organic/atmosphere interfaces are the three frequently reported interfaces in organic devices. In this dissertation, a systematic research has been carried out centering on the interface engineering of organic optoelectronic devices. With investigation of interface phenomenon and effective interface modification, dramatic decrease of power consumption and cost, obvious ehancement of device performance and improvement of stability are achieved. The main results are obtained as follows:1: Exploration of novel anode modification approach for OLEDs to reduce the power consumption and enhance the efficiency.Power consumption and light emitting property are the key parameters for the real application of organic light-emitting diodes. In fact, modification of electrodes is a widely applied approach to improve device performance of OLEDs since it can optimize the devices performance without change of organic functional materials. We demonstrated that the improvement of interface contact between ITO anode and organic semiconductor layer can be realized by the introduction of ultrathinhexadecafluoro copper phthalocyanine (F16CuPc) layer. Besides, The modification brings on formation of dipole layer on the ITO surface, which in turn leads to workfunction enhancement of ITO anode and dramatic decrease of hole injection barrier. With device design and optimization, we fabricated high performance low-operation voltage single-layer, double-layer and multi-layer OLEDs with tris(8-quinolinolato)aluminum (Alq3) as emissive layer. For the single layer Alq3 devices, the modification of the anode results in the significant enhancement in the current efficiency by about 30 times. The operation voltage decrease obviously for double layer devices, with minimum turn-on voltage of 2.6 V. As for multilayer OLEDs, the maximum current efficiency up to 7.63 cd/A and low turn-on voltage of 2.89 V are obtained by improving carrier density in the combination zone and optimization of carrier balance. The performance is one of the best one for OLEDs with Alq3 light emitting layer(Patent Number:ZL 200510126485.X; Di CA, et al. Appl. Phys. Lett. 2007, 90, 133508;Di CA, et al. Appl. Phys. Lett. 2006, 89, 033502).2: Development of novel organic light-emitting transistor structure and realization of light emission under ambient atmosphere.Organic light-emitting transistor is a highly integrated organic optoelectronic devices since both field-effect and light emitting can be realized in the same channel simultaneously. With optimized photolithograph techniques, we fabricated OFETs with Au and Al serves as source and drain electrode, respectively. Then, the laterally arranged heterojunction structures are achieved by successively inclined deposition of the field-effect and light-emitting materials. It has been observed that introduction of Au-Al source-drain electrodes and laterally arranged heterojunction structures result in enhancement of electron injection and improved carrier density of both holes and electrons. Besides, the designed device structure offers an ideal and widely applicable one to realize effective integration of field-effect property and light emission. It is because the two kind of organic semiconductors could take full use of their own advantages. We fabricated both small molecular and polymer based OLEFTs with pentacene, Alq3and TPA-PPV, respectively(Patent Number: ZL 200610089448.0;ZL 200510130758.8; Di CA, et al. Appl. Phys. Lett. 2006, 88, 121907;Di CA, et al.Adv. Funct. Mater. 2007, 17, 1567.). The results constitute first demonstration of organic light-emitting transistor under ambient atmosphere(Cicoira, F. et al. Adv. Funct. Mater. 2007, 17, 3421;Cicoira, F. et al. J. Mater. Chem. 2008, 18, 158).3: Exploration of novel approach to fabricate high performance low-cost OFETs.Low cost plays dominant role in determining the further development of OFETs. Source-drain electrodes are important parts in OFETs. Gold has been the most widely applied source–drain electrode for OFETs to date, due to its high conductivity, good stability, and formation of excellentcontact with many p-type organic semiconductors. However, the high cost of gold is an adverse factor in practical applications. On the other hand, low-cost electrodes such as Cu and Ag, are unsuitable for most p-type OFETs due to their relatively low workfunction. We provide a simple method to modify the bottom contact Cu or Ag electrodes with organic charge transfer compounds (Cu-TCNQ or Ag-TCNQ). The modification enhanced the workfunction of electrodes and improved the electrode/organic semiconductor contact which results in dramatic improvement of carrier injection. Therefore, we fabricated low cost Cu or Ag based OFETs with device performance comparable with the one of Au based OFETs. Besides, we investigated the influence of electrode morphology on the device performance by the formation of nanosized Cu electrodes. It has been discovered that introduction of source-drain electrodes with proper roughness is helpful to reduce the contact resistance. Fabrication of OFETs based on many organic semiconductors proved that it is a universal approach to improve the performance of bottom contact devices(Patent Number: 200610089591.X;Di CA, et al. J. Am. Chem. Soc. 2006, 128, 16418; Di CA, et al. Phys. Chem. Phys. Chem.2008, 10, 2302 (Front Cover)). The result possess potential application in the patterning of organic crystals and construction of corresponding devices(Di CA et al. Chem. Mater. 2009, 21, 4873).4: Discovery and investigation of high performance top contact OFETs with Cu electrodes. The typical OFET electrode structure, with a bottom gate, can be divided into top-contact and bottom-contact configurations. With varied electrode deposition sequence, the OFETs with different electrode structure required different modification techniques and exhibit varied device performance. Top-contact OFETs usually have a good electrode/organic layer contact and exhibit high device performance. We discovered that many organic semiconductors based OFETs with Cu top-contact electrodes show comparable device performance with the one of Au top-contact devices. The most excellent performance up to 0.8 cm2V-1s-1 can be obtained for pentacene FETs with Cu top-contact. The high performance is result from good electrode/organic layer contact and the formation of Cu x O during the electrode deposition process or device storage in air. The spontaneous formed Cu x O possess matched energy level with many organic semiconductors and bring on improved device performance (Patent Application Number: 200710118153.6;Di CA, et al. Adv. Mater. 2008, 20, 1286.). The results thus provide an effective way towards high performance low cost top-contact OFETs (High-tech Materials Alert, 2008, 25, 9).5: Development of novel graphene patterning method and its applications in OFETs. Graphene, single or few layer of two dimensional graphite, received great interest among condensed physics and material sciences due to its unusual and stable structure. We developed a novel vapor deposition method with ethanol as the carbon source to fabricate patterned gragheneusing the patterned copper or silver and demonstrated its application in OFETs. The patterned graphene exhibit good contact with organic semiconductors, with low carrier injection barrier for p-type OFETs and can serve as excellent source-drain electrodes for OFETs. The pentacene based bottom-contact devices with channel length of 5 m can reach high mobility of 0.53 cm2V-1s-1 which is one of the best result for pentacene bottom contact devices with bare SiO2 dielectric layer (Patent Application Number: 200710177814.2; Di CA, et al.Adv. Mater. 2008, 20, 3289). The result demonstrates novel approach to fabricate patterned graphene and open a new application of graphene in OFETs (NPG, Asia Materials, /asia-materials/highlight.php?id=291;Pang, SP et al. Adv. Mater. 2009, 21, 3488;Cao Y, et al. Adv. Funct. Mater. 2009, 19, 2743). The result is the first experimental step towards integrating graphene and conjugated organics (Burghard, M. et al. Adv. Mater. 2009, 21,2586.).6: Discovery of relationship between the device stability and dielectric/organic layer interfaces and fabrication of high performance pentacene FETs.Device stability, a hot topic in the organic optoelectronic device field, is widely believed to be related to the properties of organic semiconductors. Pentacene is the most widely investigated organic semiconductor for OFETs. However, poor device stability is the key shortcomings that impede its real application. We discovered that the device stability of pentacene OFETs in air is strongly related to the properties of dielectric layers. The device performance of pentacene FETs with bare SiO2 can maintain for 7 months. By the investigation of relationship between the device stability and dielectric layer surface energy, we suggest the pentacene aggregation and phase transfer should be responsible for the device performance degradation for devices with low surface energy dielectric layer (OTS modified SiO2). We obtained high performance pentancene FETs with high mobility up to 1.8 cm2V-1s-1 and excellent stability by the optimization of dielectric layer(Di CA, et al. Phys. Chem. Chem. Phys. 2009, 11, 7268.).In summary, centering on investigation of interface phenomenon, we fabricated high performance OLEDs, OFETs and OLEFTs by the device design and optimization. Also, a series of novel interface approaches were explored to improving the device performance and stability, lowering the the fabrication cost and power consumption (Di CA, et al.J. Phys. Chem. B 2007, 111, 14083(Feature Article, Front Cover), Di CA, et al. Acc. Chem. Res. 2009,42,1573). These results might boost further development of organic optoelectronic devices towards real applications.Key words: organic light-emitting diodes, organic field-effect transistors, organiclight-emitting transistors, interface, electrode modification中文摘要被称为“塑料电子学”的有机光电材料与器件因其在大面积和低成本的柔性显示、平板照明、射频标签和电子纸等方面的广阔应用前景在过去二十年中备受关注。

SOP8Plastic-EncapsulateMOSFETS-长电科技

SOP8Plastic-EncapsulateMOSFETS-长电科技

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOP8 Plastic-Encapsulate MOSFETSCJQ4435 P-Channel Power MOSFETDESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent R DS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.APPLICATIONSz Battery Switch z Load SwitchMARKINGQ4435= Device codeSolid dot=Pin1 indicatorSolid dot = Green molding compound device,if none, the normal deviceFront side YY=Date CodeMAXIMUM RATINGS ( T a =25℃ unless otherwise noted )Parameter Symbol Limit UnitDrain-Source Voltage V DS-30VGate-Source Voltage V GS ±20 V Continuous Drain Current I D -9.1 A Pulsed Drain CurrentI DM -36 A Single Pulsed Avalanche Energy E AS (1) 20 mJ Power DissipationP D 1.4 W Thermal Resistance from Junction to Ambient R θJA 89 ℃/W Junction Temperature T J 150 ℃ Storage Temperature RangeT stg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) T L 260 ℃(1).E AS condition: V DD =-50V,L=0.5mH, R G =25Ω, Starting T J = 25°CELECTRICAL CHARACTERISTICS(T a =25℃ unless otherwise specified)ParameterSymbol Test Condition Min Typ Max UnitOff characteristicsDrain-source breakdown voltage V (BR) DSS V GS = 0V, I D =-250µA -30V Zero gate voltage drain current I DSS V DS =-30V, V GS =0V -1 µA Gate-body leakage current I GSSV DS =0V, V GS =±20V±100nAOn characteristics (note1) Gate-threshold voltageV GS(th) V DS =V GS , I D =-250µA -1.0 -3.0 V V GS =-10V, I D =-9.1A 24 m Ω Static drain-source on-sate resistance R DS(on)V GS =-4.5V, I D =-6.9A 35 m Ω Forward transconductanceg FSV DS =-10V, I D =-9.1A20SDynamic characteristics (note 2) Input capacitance C iss 1350 Output capacitanceC oss 215 Reverse transfer capacitance C rssV DS =-15V,V GS =0V, f =1MHz185pFSwitching characteristics (note 2)V DS =-15V, V GS =-10V,I D =-9.1A50 Total gate chargeQ g25 Gate-source charge Q gs 4 Gate-drain charge Q gd V DS =-15V, V GS =-4.5V, I D =-9.1A7.5 nC Turn-on delay time t d (on) 15 Turn-on rise time t r 15Turn-off delay time t d(off) 70 Turn-off fall time t f V DD =-15V,I D =-1A, V GS =-10V,R G =1Ω, R L =15Ω25nsGate ResistanceR gf =1MHz, V DS =0V, V GS =0V,5.8 ΩDrain-Source Diode Characteristics Drain-source diode forward voltage(note1) V SD V GS =0V, I S =-2A-1.2 VContinuous drain-source diode forward currentI S -9.1 A Pulsed drain-source diode forward current I SM-36 ANotes: 1. Pulse Test : Pulse Width ≤300µs, duty cycle ≤2%. 2.Guaranteed by design, not subject to production testing.255075100125-0.2-0.4-0.6-0.8-1.0JUNCTION TEMPERATURE TJ ()℃SOURCE TO DRAIN VOLTAGE VSD(V)SO P8 Suggested Pad LayoutSO P8 Package Outline DimensionsSO P8 Tape and Reel。

品管常用英文缩写

品管常用英文缩写

品管常用英文縮寫CEM Contract Manufacture service 合約委托代工IBSC Internet Business Solution Center 國際互聯網應用中心PCEG Personal Computer Enclosure group 個人電腦外設事業群(FOXTEQ)SABG system assembly business group 系統組裝事業群ES Engineer standard 工標Document center (database center) 資料中心DC Design Center 設計中心Painting 烤漆(廠)Assembly 組裝(廠)Stamping 沖壓(廠)Education and Training 教育訓練proposal improvement/creative suggestion 提案改善Technological exchange and study 技術交流研習會Technology and Development Committee 技術發展委員會BS Brain Storming 腦力激蕩QCC Quality Control Circle 品質圈/QC小组PDCA Plan Do Check Action 計劃執行檢查總結DCC delivery control center 交貨管制中心Computer 電腦類產品Consumer electronics 消費性電子產品Communication 通訊類產品Core value (核心价值)Love 愛心Confidence 信心Decision 決心Corporate culture (公司文化)Integration 融合Responsibility 責任Progress 進步Time to market 及時切入生產Time to volume 及時大量生產Time to money 及時大量交貨FOUR CONTROL SYSTEM 四大管制系統Engineering control system 工程管制系統Quality control system 品質管制系統Manufacturing control system 生產管制系統Management control system 經營管制系統Classification 整理(sorting, organization)-seiriRegulation 整頓(arrangement, tidiness)-seitonCleanliness 清掃(sweeping, purity)-seisoConservation 清洁(cleaning, cleanliness)-seiktsuCulture 教養(discipline)-shitsukeSave 節約Safety安全二:英文縮寫品質人員名稱類QC quality control 品質管理人員FQC final quality control 終點品質管制人員IPQC in process quality control 制程中的品質管制人員OQC output quality control 最終出貨品質管制人員IQC incoming quality control 進料品質管制人員TQC total quality control 全面質量管理POC passage quality control 段檢人員QA quality assurance 質量保證人員OQA output quality assurance 出貨質量保證人員QE quality engineering 品質工程人員品質保證類FAI first article inspection 新品首件檢查FAA first article assurance 首件確認CP capability index 能力指數CPI capability process index 模具製程能力參數SSQA standardized supplier quality audit 合格供應商品質評估FMEA failure model effectiveness analysis 失效模式分析FQC運作類AQL Acceptable Quality Level 運作類允收品質水準S/S Sample size 抽樣檢驗樣本大小ACC Accept 允收REE Reject 拒收CR Critical 極嚴重的MAJ Major 主要的MIN Minor 輕微的Q/R/S Quality/Reliability/Service 品質/可靠度/服務P/N Part Number 料號L/N Lot Number 批號AOD Accept On Deviation 特采UAI Use As It 特采FPIR First Piece Inspection Report 首件檢查報告PPM Percent Per Million 百萬分之一制程統計品管專類SPC Statistical Process Control 統計製程管制SQC Statistical Quality Control 統計品質管制GRR Gauge Reproductiveness & Repeatability 量具之再制性及重測性判斷量可靠與否DIM Dimension 尺寸DIA Diameter 直徑N Number 樣品數其它品質術語類QIT Quality Improvement Team 品質改善小組ZD Zero Defect 零缺點QI Quality Improvement 品質改善QP Quality Policy 目標方針TQM Total Quality Management 全面品質管理RMA Return Material Audit 退料認可7QCTools 7 Quality Control Tools 品管七大手法通用之件類ECN Engineering Change Notice 工程變更通知(供應商)ECO Engineering Change Order 工程改動要求(客戶)PCN Process Change Notice 工序改動通知PMP Product Management Plan 生產管制計劃SIP Standard Inspection Procedure 製程檢驗標準程序SOP Standard Operation Procedure 製造作業規範IS Inspection Specification 成品檢驗規範BOM Bill Of Material 物料清單PS Package Specification 包裝規範SPEC Specification 規格DWG Drawing 圖面系統文件類ES Engineering Standard 工程標準IWS International Workman Standard 工藝標準ISO International Standardization Organization 國際標準化組織GS General Specification 一般規格部類PMC Production & Material Control 生產和物料控制PCC Product control center 生產管制中心PPC Production Plan Control 生產計劃控制MC Material Control 物料控制DCC Document Control Center 資料控制中心QE Quality Engineering 品質工程(部)QA Quality Assurance 品質保證处QC Quality Control 品質管制(課)PD Product Department 生產部LAB Laboratory 實驗室IE Industrial Engineering 工業工程R&D Research & Design 設計開發部生產類PCs Pieces 個(根,塊等)PRS Pairs 雙(對等)CTN Carton 卡通箱PAL Pallet/skid 棧板PO Purchasing Order 采購訂單MO Manufacture Order 生產單D/C Date Code 生產日期碼ID/C Identification Code (供應商)識別碼SWR Special Work Request 特殊工作需求L/N Lot Number 批號P/N Part Number 料號OEM Original Equipment Manufacture 原設備製造PC Personal Computer 個人電腦CPU Central Processing Unit 中央處理器A.S.A.P As Soon As Possible 盡可能快的E-MAIL Electrical-Mail 電子郵件N/A Not Applicable 不適用QTY Quantity 數量I/O input/output 輸入/輸出NG Not Good 不行,不合格C=0 Critical=0 極嚴重不允許APP Approve 核準,認可,承認CHK Check 確認ASS'Y Assembly 裝配,組裝T/P True Position 真位度5WIH When, Where, Who, What, Why, How to6M Man, Machine, Material, Method, Measurement, Message4MTH Man, Material, Money, Method, Time, How 人力,物力,財務,技術,時間(資源) SQA Strategy Quality Assurance 策略品質保證DQA Design Quality Assurance 設計品質保證MQA Manufacture Quality Assurance 製造品質保證SSQA Sales and service Quality Assurance 銷售及服務品質保證LRR Lot Reject Rate 批退率DT Desk Top 臥式(機箱T Mini-Tower 立式(機箱)DVD Digital Video DiskVCD Video Compact DiskLCD Liquid Crystal Display 液晶顯示器CAD Computer Aided Design 計算機輔助設計CAM Computer Aided Manufacturing 計算機輔助生產PCB Printed Circuit Board 印刷電路板CAR Correction Action Report 改善報告NG Not Good 不良WDR Weekly Delivery Requirement 周出貨要求PPM Percent Per Million 百萬分之一TPM Total Production Maintenance 全面生產保養MRP Material Requirement Planning 物料需計劃OS Operation System 作業系統TBA To Be Assured 待定,定缺D/C Drawing ChangeP/P Plans & ProcedureEMI Electrical-Music Industry 電子音樂工業Electrical Magnetic Interference 電子干扰RFI Read Frequency Input 讀頻輸入MMC Maximum Material ConditionLED lighting-emitting diode 發光二极管CIP Continuous improvement process 持續改善過程B2C Business to customerB2B Business to businessA VL Approved vendor listPOP Procedure of packaging 包裝程序三:專業詞匯通用類president董事長operator作業員position職務general manager總經理special assistant 特助deputy manager |'depjuti| =vice manager副理deputy supervisor =vice supervisor副課長group leader組長line leader線長supervisor 課長responsible department負責單位Human Resources Department人力資源部Head count 人頭數production department生產部門planning department企劃部QC Section品管課stamping factory沖壓廠painting factory烤漆廠molding factory成型廠administration/general affairs dept./總務部production unit生產單位meeting minutes會議記錄distribution department分發單位subject主題conclusion結論decision items決議事項pre-fixed finishing date預定完成日Color management 顏色管理Visual management 目視管理production capacity生產力first count初盤first check初盤復櫂second count 復盤second check復盤復核quantity of physical inventory second count 復盤點數量physical inventory盤點數量physical count quantity帳面數量difference quantity差異量spare parts physical inventory list備品盤點清單cause analysis原因分析waste materials廢料description品名specification 規格model機種work order工令revision版次remark備注registration登記registration card登記卡to control管制application form for purchase請購單consume, consumption消耗to notify通知to fill in填寫to collect, to gather收集statistics統計cosmetic inspection standard 外觀檢驗規範computer case 電腦外殼(組件)personal computer enclosure 電腦機箱產品front plate前板rear plate后板chassis |'∫æsi| 基座bezel panel面板Hood 上蓋base pan 基座bezel 面板riser card 擴充卡flat cable 排線pin header 排針TOP driver cage 上磁架bottom driver cage 下磁架resin film 樹脂膜raw materials原料materials物料steel plate鋼板roll/coil material捲料spare parts =buffer備品plastic parts塑膠件sheet metal parts/stamping parts 沖件material check list物料檢查表finished product成品semi-finished product半成品good product/accepted goods/ accepted parts/good parts良品defective product/non-good parts不良品disposed goods處理品warehouse/hub倉庫packing material包材plastic basket膠筐flow chart流程表單production tempo生產進度現狀lots of production生產批量manufacture procedure制程to revise, modify修訂to switch over to, switch—to, switching over切換engineering bottleneck, project difficulty工程瓶頸glove(s)手套glove(s) with exposed fingers割手套Band-Aid創可貼Industrial alcohol工業酒精broom掃把mop拖把vacuum cleaner吸塵器rag 抹布garbage container灰箕garbage can垃圾箱garbage bag垃圾袋liaison聯絡單rags抹布lamp holder燈架to mop the floor拖地to clean a table擦桌子air pipe 氣管delivery deadline交貨期die worker模工production, to produce生產equipment設備resistance電阻beacon警示燈coolant冷卻液crusher粉碎機plate電鍍power button電源按鍵reset button重置鍵forklift*車Workshop traveler 天車trailer =long vehicle拖板車Hydraulic trolley手壓車hydraulic hand jack油壓板車casing = containerization裝箱velocity速度patent專利coordinate座標supply and demand供求career card履歷卡barricade隔板carton box紙箱to pull and stretch拉深work cell/work shop工作間bottleneck 瓶頸組裝類Assembly line組裝線Layout布置圖Conveyer流水線運輸帶Rivet machine拉釘機Rivet gun拉釘槍Screw driver起子Electric screw driver電動起子Hydraulic machine 液壓機Pneumatic screw driver氣動起子automation自動化to stake, staking, riveting鉚合add lubricant oil加潤滑油argon welding氬焊cylinder油缸robot機械手conveying belt輸送帶transmission rack輸送架to draw holes抽孔bolt螺栓nut 螺母screw 螺絲identification tag標示單screwdriver plug起子插座automatic screwdriver電動啟子to move, to carry, to handle搬運be put in storage入庫packing包裝staker = riveting machine鉚合機fit together組裝在一起fasten鎖緊(螺絲)fixture 夾具(治具)pallet/skid棧板barcode條碼barcode scanner條碼掃描器fuse together熔合fuse machine/heat stake熱熔機processing, to process加工delivery, to deliver 交貨to return delivery to. to send delivery back to return of goods退貨easily damaged parts易損件standard parts標準件to lubricate潤滑spring 彈簧spare tools location/buffer手工備品倉spare molds location模具備品倉tox machine自鉚機烤漆類high-speed transmission高速傳遞heat dissipation熱傳rack上料volatile揮發性degrease脫脂rinse水洗D.I. rinse純水次Chromate鉻酸處理Anodize陽性處理seal封孔scraped products報放品disposed products處理品dismantle the die折模auxiliary function輔助功能heater band 加熱片thermocouple熱電偶dryer烘干機induction感應induction light感應光response =reaction =interaction感應concave凸convex凹satin texture段面咬花grit沙礫granule =pellet =grain細粒sand blasting噴沙grit maker抽粒機cushion緩沖fillet鑲;嵌邊品質類qualified products, up-to-grade products良品defective products, not up-to-grade products不良品defective product box不良品箱poor processing 制程不良poor incoming part來件不良exposed metal/bare metal金屬裸露excessive defect過多的缺陷critical defect極嚴重缺陷major defect主要缺陷minor defect次要缺陷not up to standard不合規格cosmetic defect外觀不良lack of painting烤漆不到位slipped screw head/slippery slipped thread滑絲missing part漏件wrong part錯件oxidation氧化defective threading抽芽不良poor staking鉚合不良deficient purchase來料不良制程不良cosmetic inspection外觀檢查inner parts inspection內部檢查blister 氣泡angular offset 角度偏差dent 壓痕scratch 刮傷deformation 變形filings 鐵削defective label 不良標簽abrasion 磨損Breaking. (be)broken,(be)cracked 斷裂short射料不足nick缺口speck瑕疪shine亮班splay 銀紋gas mark焦痕delaminating起鱗speckle斑點mildewed =moldy = mouldy發霉deformation變形burr(金屬)flash(塑件)毛邊poor staking鉚合不良excessive gap間隙過大grease/oil stains油污inclusion雜質shrinking/shrinkage縮水mixed color雜色fold of packaging belt打包帶折皺painting make-up補漆discoloration羿色water spots水漬impurity 雜質Mismatch 錯位failure, trouble 故障deformation 變形rust 生銹peel 脫漆Shrink 縮水Contamination 臟污water spots 水漬Gap 間隙label error 標簽錯誤Missing label 漏貼rejection criteria 拒收標准Suspected rejects 可疑庇abrasion 損傷、磨損Texture surface 印花紋表面Streak 條紋stains 污點Blotch 斑點discoloration 脫色Inclusion 雜質slug mark 壓痕dirt grime 灰塵blush 毛邊薄膜sink 下凹Hickey 漏漆labels and logos 貼紙與商標Configuration labels 組合貼紙corrugated container 瓦擺紙箱Delaminating 脫層splattering 散點Gouge 銼孔puckering 折痕第11 页共11 页。

贴片三极管l6

贴片三极管l6

IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=6V,IC=1mA IC=100mA,IB=10mA IC=100mA,IB=10mA VCE=6V,IC=10mA
60 50 5 0.1 0.1 90
200
μA μA
SOT-23 SOT
2SC1623 2SC1623
TRANSISTOR (NPN)
FEATURES FEA z High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA =200 =6V z High voltage:VCEO=50V volt MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) CHARA amb=25℃ other
Parabreakdown voltage breakdo Collector-emitter breakdown voltage brea kdo olt Emitter-base breakdown voltage Emitter-bas breakdo Collector cut-off current Emitter cut-off current DC current gain curr Collector-emitter saturation voltage Collector satur Base-emitter saturation voltage Bas -emitte satu ratio Transition frequency fre que Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Test conditions MIN TYP MAX UNIT V V V

塑料减胶 英语

塑料减胶 英语

塑料减胶英语In today's world, plastic has become an integral part of our daily lives. It is used in packaging, containers, electronics, automobiles, and various other applications. However, the excessive use of plastic has led to a significant environmental crisis, with millions of tons of plastic waste being generated each year. This plastic waste not only pollutes our land, water, and air but also poses a threat to marine life and human health. Therefore, it is crucial to reduce plastic usage and promote sustainable alternatives.One of the most effective ways to reduce plastic waste is through the concept of "plastic reduction." This involves reducing the amount of plastic we use in our daily lives, whether it's through using reusable items, switching to biodegradable alternatives, or simply reducing our consumption. By adopting these practices, we can significantly lower the amount of plastic waste generated and thereby reduce the negative environmental impacts.For instance, we can start by using reusable shopping bags instead of single-use plastic bags. This simple changecan significantly reduce the number of plastic bags ending up in landfills and oceans. Additionally, we can choose to use refillable containers for items like water, juice, and shampoo, instead of buying them in plastic bottles. Thisnot only reduces plastic waste but also saves money in the long run.Moreover, we can support companies that are committedto reducing their plastic footprint. Many companies are now offering products in packaging made from recycled plasticor biodegradable materials. By purchasing these products,we are not only reducing our own plastic waste but also encouraging other companies to adopt more sustainable practices.Apart from individual actions, governments and organizations also play a crucial role in plastic reduction. Governments can implement policies and regulations to encourage the use of sustainable packaging and discourage the production and use of single-use plastics.Organizations can also promote awareness and educationabout the negative impacts of plastic waste and provideresources and support to help individuals and businesses make the switch to more sustainable options.In conclusion, plastic reduction is essential for addressing the environmental crisis caused by excessive plastic usage. By adopting sustainable practices, supporting companies that are committed to reducing their plastic footprint, and collaborating with governments and organizations, we can make a significant impact in reducing plastic waste and protecting our planet for future generations.**塑料减胶及其环境影响:行动的呼唤**在当今世界,塑料已成为我们日常生活中不可或缺的一部分。

2022年专四作文范文 塑料

2022年专四作文范文 塑料

2022年专四作文范文塑料英文回答:Plastic is a material that has become an integral part of our daily lives. It is used in almost everything, from packaging to electronics to construction. However, the overuse and improper disposal of plastic has led to serious environmental issues. For example, plastic pollution in the ocean has caused harm to marine life, and microplastics have been found in drinking water.In my opinion, we need to take action to reduce our reliance on plastic. For instance, we can start using reusable bags instead of plastic ones when we go shopping, and choose products with minimal or no plastic packaging. Additionally, recycling is also crucial in reducing the amount of plastic waste that ends up in landfills or the environment.中文回答:塑料是一种已经成为我们日常生活中不可或缺的材料。

它被用于几乎所有东西,从包装到电子产品再到建筑材料。

然而,塑料的过度使用和不当处理已经导致了严重的环境问题。

塑料知识点总结英语

塑料知识点总结英语

塑料知识点总结英语History of PlasticPlastic has been around for a relatively short period of time, compared to other materials such as wood, metal, and glass. The first synthetic plastic, Bakelite, was invented in 1907 by Leo Baekeland. This marked the beginning of the modern plastics industry. Over the years, advancements in technology and materials science have led to the development of a wide variety of plastics with different properties and applications.Production ProcessPlastics are derived from natural resources such as oil, gas, and coal. The production process involves polymerization, where small molecules called monomers are chemically bonded together to form long chains called polymers. These polymers are then processed and molded into various shapes to create the final plastic products.Types of PlasticsPlastics can be classified into several categories based on their chemical composition, properties, and uses. The most common types of plastics include:1. Polyethylene (PE): This type of plastic is widely used in packaging, containers, and plastic bags due to its low cost and excellent moisture resistance.2. Polypropylene (PP): PP is known for its high heat resistance and is commonly used in applications such as food containers, automotive parts, and medical devices.3. Polyvinyl Chloride (PVC): PVC is a versatile plastic that is used in pipes, tubing, flooring, and siding due to its durability and weather resistance.4. Polystyrene (PS): PS is used in products such as disposable cups, food packaging, and insulation due to its lightweight and insulating properties.5. Polyethylene Terephthalate (PET): PET is commonly used in the production of beverage bottles, food containers, and synthetic fibers due to its clarity and strength.Uses of PlasticPlastic is used in a wide range of applications across various industries. Some common uses of plastic include:1. Packaging: Plastic is used to package a wide range of products, including food, beverages, and consumer goods, due to its lightweight, durable, and cost-effective nature.2. Construction: Plastics are used in construction materials such as pipes, insulation, and roofing due to their strength, weather resistance, and versatility.3. Healthcare: Plastics are used in medical devices, equipment, and packaging due to their sterile, non-reactive, and lightweight properties.4. Electronics: Plastics are used in electronics components such as casings, connectors, and insulation due to their electrical insulation and lightweight properties.Benefits of PlasticPlastic offers several advantages that make it a popular choice for manufacturers and consumers.1. Lightweight: Plastic is lightweight, which makes it easy to transport and handle, reducing the overall cost of production and logistics.2. Durable: Plastic is durable and can withstand harsh environmental conditions, making it suitable for a wide range of applications.3. Versatile: Plastics can be easily molded into various shapes and sizes, making them suitable for a wide range of products and applications.4. Cost-effective: Plastic is a cost-effective material, which makes it an attractive option for manufacturers looking to reduce production costs.Challenges of PlasticWhile plastic offers several benefits, it also poses significant environmental challenges.1. Non-biodegradable: Most plastics are non-biodegradable, which means they can persist in the environment for hundreds of years, leading to pollution and ecological damage.2. Pollution: Improper disposal of plastic waste has led to pollution of land, water, and air, posing a significant threat to ecosystems and wildlife.3. Resource depletion: The production of plastic requires the extraction of natural resources such as oil and gas, contributing to resource depletion and environmental degradation.4. Health risks: Some plastic additives and chemicals have been linked to health risks such as cancer, hormonal disruptions, and reproductive issues.Solutions to Plastic PollutionTo address the environmental challenges posed by plastic, various solutions have been proposed and implemented.1. Recycling: Recycling of plastic waste can help reduce the amount of plastic ending up in landfills and oceans, while also conserving natural resources.2. Biodegradable plastics: The development of biodegradable plastics that can decompose in the environment offers a potential solution to the problem of plastic pollution.3. Regulation and policy: Governments and organizations are implementing regulations and policies to discourage the use of single-use plastics and promote sustainable alternatives.4. Consumer education: Educating consumers about the impact of plastic pollution and the importance of reducing, reusing, and recycling plastic can help change behaviors and attitudes towards plastic use.ConclusionPlastic is a valuable and versatile material that has transformed the way we live and work. However, its non-biodegradable nature and improper disposal pose significant environmental challenges. By understanding the key points about plastic, including its production process, types, uses, benefits, and challenges, we can work towards finding sustainable solutions to mitigate its impact on the planet. Through innovation, regulation, and consumer awareness, we can ensure that we continue to benefit from the advantages of plastic while minimizing its negative environmental impact.。

two tones of plastic谓语动词

two tones of plastic谓语动词

two tones of plastic谓语动词Plastic, one of the most widely used materials in the world, has become a symbol of our modern society. It is lightweight, durable, and versatile, making it an ideal choice for countless applications. However, the overwhelming prevalence of plastic has also brought about a grave environmental crisis. In recent years, there has been a growing concern about the impact of plastic waste on our planet. This article will examine the two tones of plastic – its benefits and its detrimental effects – and offer potential solutions to mitigate its negative consequences.Part 1: The Benefits of Plastic (900 words)Plastic has revolutionized various industries and improved our daily lives in many ways. Firstly, its lightweight nature makes transportation and packaging more efficient. Plastic packaging helps to extend the shelf life of food, reducing waste and ensuring that products reach consumers in the best condition. Additionally, plastic is an essential material for medical devices and equipment, enabling advancements in healthcare and saving countless lives.Moreover, plastic has played a significant role in the automotive industry, contributing to improved fuel efficiency by reducing the weight of vehicles. It has also revolutionized the electronics industry, leading to smaller, lighter, and more technologically advanced devices. Plastic is an integral part of our modern infrastructure, used in pipes, cables, and insulation materials, ensuring the efficient delivery of electricity and clean water.Furthermore, plastic has provided affordable and accessible products for people around the world. From household items to consumer electronics, plastic has made these goods more affordable, allowing a broader range of individuals to enjoy a higher standard of living. Its flexibility and versatility allow for innovative designs and the creation of aesthetically pleasing products.Part 2: The Detrimental Effects of Plastic (900 words)While plastic offers numerous benefits, its improper disposal and mismanagement have led to severe environmental consequences. Plastic waste, particularly single-use items, poses a significant threat to ecosystems, wildlife, and human health. Plastic pollution in the oceans, for example, has reached alarming levels, with plastic debris endangering marine life through entanglement and ingestion.Plastics are typically made from non-renewable resources, such as crude oil and natural gas. The extraction and production of these resources contribute to carbon emissions, exacerbating climate change. Additionally, plastic manufacturing processes release harmful chemicals, pollutants, and greenhouse gases into the atmosphere, further contaminating our air, water, and soil.Plastic waste takes centuries to decompose, and much of it ends up in landfills or as litter in the environment, persisting for generations. Microplastics, tiny particles resulting from the breakdown of larger plastic items, have been found in water sources, soil, and even in the air we breathe. These microplastics can enter the food chain, posing potential risks to human health.Part 3: Solutions to Mitigate the Negative Consequences (900 words)To address the detrimental effects of plastic, various measures can be implemented. Firstly, promoting a shift towards sustainable alternatives to plastic, such as bio-based or biodegradable materials, can help reduce the environmental impact. Governments and businesses need to invest in research and development of these alternatives and incentivize their adoption through policies and regulations.Waste management systems play a crucial role in reducing plastic pollution. Improving recycling infrastructure, implementing effective recycling programs, and encouraging individuals to participate in recycling initiatives are vital steps. Additionally, reducing the production and consumption of single-use plastics, such as plastic bags and disposable cutlery, can greatly minimize plastic waste.Education and awareness campaigns are essential in changing societal attitudes and behaviors towards plastic. Teaching the importance of responsible plastic use, proper waste disposal, and the benefits of recycling can have a significant impact. Encouraging individuals to embrace reusable alternatives, such as reusable bags, water bottles, and food containers, can create a culture of sustainability.Furthermore, international cooperation is crucial in addressing the global plastic crisis. Countries need to collaborate to develop and enforce agreements on plastic waste management, promote technology transfer, and share best practices. By working together, we can effectively tackle the issue of plastic pollution and protect our planet for future generations.ConclusionPlastic, with its dual nature of benefits and detrimental effects, presents a complex challenge that requires immediate attention. Understanding and acknowledging the positive aspects of plastic allows us to leverage its advantages while mitigating its negative consequences. By implementing sustainable practices, promoting alternatives, and educating individuals, we can work towards a future where plastic coexists harmoniously with our environment. It is our collective responsibility to preserve and protect our planet, ensuring its sustainability for generations to come.。

长电开关二极管SOD-323封装规格书

长电开关二极管SOD-323封装规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate DiodesBAV16WS/1N4148WS FAST SWITCHING DIODEFEATURESMARKING: T6, T4Maximum Ratings and Electrical Characteristics, Single Diode @T a =25℃Parameter SymbolLimitUnitNon-Repetitive Peak R everse V oltage V RM 100 V Peak Repetitive Peak R everse V oltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R100 VRMS Reverse Voltage V R(RMS) 71 VForward Continuous Current I FM 300mA Average Rectified Output Current I O 150 mA Peak F orward S urge C urrent @t =1.0μs@t =1.0s I FSM2.0 1.0APower DissipationPd 200 mW Thermal Resistance Junction to AmbientR θJA625 ℃/WJunction T emperature T j 150 Storage T emperatureT STG -55~+150℃ Electrical Ratings @T a =25℃ParameterSymbol MinTypMaxUnit Conditions V F1 0.715V I F =1mA V F2 0.855VI F =10mA V F3 1.0 V I F =50mA Forward voltageV F4 1.25 VI F =150mAI R1 1 μA V R =75V Reverse currentI R2 25 nA V R =20V Capacitance between terminals C T2 pF V R =0V,f=1MHz Reverse r ecovery t imet rr4 ns I F =I R =10mA Irr=0.1XI R ,R L =100ΩSOD-323℃2550751001251500.010.111010051015200.81.01.2Reverse CharacteristicsAMBIENT TEMPERATURE T a ()℃1N4148WSTypical CharacteristicsF O R W A R D C U R R E N T I F (m A )REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes1N4448WS FAST SWITCHING DIODEFEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High ConductanceMARKING: T5Maximum Ratings and Electrical Characteristics, Single Diode @T a =25℃Parameter SymbolLimitUnitNon-Repetitive Peak R everse V oltage V RM 100 V Peak Repetitive Peak R everse V oltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R75 VRMS Reverse Voltage V R(RMS) 53VForward Continuous Current I FM 500 mAAverage Rectified Output Current I O 250 mA Peak F orward S urge C urrent @t =1.0μs @t =1.0s I FSM4.0 1.5APower DissipationPd 200 mW Thermal Resistance Junction to AmbientR θJA 625 ℃/WStorage T emperature T STG -55~+150 ℃Electrical Ratings @T a =25℃ParameterSymbol MinTypMaxUnitConditionsReverse b reakdown v oltage V (BR)75 V I R =10μA V F1 0.62 0.72 VI F =5mA V F2 0.855VI F =10mA V F3 1.0 V I F =100mA Forward voltageV F4 1.25 VI F =150mAI R1 2.5 μA V R =75V Reverse currentI R2 25 nA V R =20V Capacitance between terminals C T4 pF V R =0V,f=1MHzReverse r ecovery t imet rr4 ns I F =I R =10mA0.60.81.01.21.41.60.1110100REVERSE VOLTAGE V R (V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )AMBIENT TEMPERATURE T a ()℃0.3330300F O R W A R D C U R R E N T I F (m A )1N4448WSTypical CharacteristicsJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes1SS355 FAST SWITCHING DIODEFEATURES1) Small surface mounting type 2) High speed3) High reliability with high surge current handling capabilityMARKING: AMaximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃Parameter SymbolLimitUnitNon-repetitive peak reverse voltage V RM 90 VDC blocking voltage V R 80 V Peak forword currentI FM 225 mAAverage rectified output current I O 100mA Surge current (@t=1s) I surge 500 mA Junction temperature Tj 150 ℃ Storage temperatureT STG -55~+150 ℃Electrical Ratings @T a =25℃ParameterSymbol MinTypMaxUnitConditions Forward voltage V F1.2 V I F =100mA Reverse currentI R0.1 µA V R =80VCapacitance between terminalsC T3 pF V R =0.5V,f=1MHz Reverse r ecovery t ime t rr4 ns I F =10mA ,V R =6V,R L =100Ω2550751001251500.010.111010051015200.81.01.2AMBIENT TEMPERATURE Ta ()℃ 1SS355Typical CharacteristicsF O R W A R D C U R R E N T I F (m A )REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )A,Jun,2012JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate DiodesBAS16WX HIGH-SPEED SWITCHING DIODEFEATURES z Fast Switching Speedz For General Purpose Switching Applications z High ConductanceMARKING: T4MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )Symbol Parameter Value Unit V RM Non-Repetitive Peak Reverse Voltage 85VV RRM V RWM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 75 VV R(RMS)RMS Reverse Voltage 53 V I OForward Current100mAP D Power Dissipation 200 mW R θjA Thermal Resistance from Junction to Ambient 625 ℃/W T JJunction Temperature150℃ T stg Storage Temperature-55~+150℃ELECTRICAL CHARACTERISTICS(T a =25℃ unless otherwise specified)Parameter Symbol Test conditions Min Typ Max UnitReverse voltageV (BR)I R =10μA 75 VI F =1mA 0.715I F =10mA0.855I F =50mA 1 Forward voltageV FI F =150mA1.25VReverse current I R V R =75V 1 μA Total capacitance C tot V R =0V,f =1MHz 2 pFReverse recovery timet rrI F = I R =10mA, I rr =0.1×I R,R L =100Ω6 nsJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate DiodesBAS316 SWITCHING DIODEFEATURES● Very Small Plastic Package ● High Switching Speed APPLICATIONS● High-Speed Switching in e.g. Surface Mounted CircuitsMARKING: A6·MAXIMUM RATINGS ( T a =25℃ unless otherwise noted )Symbol ParameterValue Unit V RRM Peak Repetitive Reverse Voltage 85 V R DC Blocking Voltage 75 V I O Continuous Forward Current 250 mA P D Power Dissipation250 mW R θJA Thermal Resistance from Junction to Ambient 500 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55~+150℃ELECTRICAL CHARACTERISTICS(Ta =25℃ unless otherwise specified)ParameterSymbol Test conditionsMin Typ Max Unit Reverse voltage V (BR) I R =100μA 100 V V R =25V 30 nA Reverse currentI RV R =75V 1 μAI F =1mA0.715 I F =10mA 0.855 I F =50mA 1 Forward voltageV FI F =150mA1.25 V Total capacitance C tot V R =0V,f=1MHz 1.5 pF Reverse recovery time t rrI F = I R =10mA, I rr =0.1×I R4nsSOD-3232550751001251500501001502002503000.00.20.40.60.81.01.220406080110100100010000Power Derating CurveP O W E R D I S S I P A T I O N P D (m W )AMBIENT TEMPERATURE T a ()℃BAS316Typical CharacteristicsF O R W A R D C U R R E N T I F (m A )FORWARD VOLTAGE V F (V)R E V E R S E C U R R E N T I R (n A )REVERSE VOLTAGE V R (V)REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOD-323 Plastic-Encapsulate DiodesBAV19WS~BAV21WS SWITCHING DIODEFEATURESz Low Reverse Currentz Surface Mount Package Ideally Suited for Automatic Insertionz Fast Switching Speedz For General Purpose Switching ApplicationsMARKING:BAV19WS: A8BAV20WS: T2BAV21WS: T3MAXIMUM RATINGS ( T a=25℃unless otherwise noted )Value Symbol ParameterBAV19WS BAV20WS BAV21WSUnit V RM Non-Repetitive Peak Reverse Voltage 120 200 250 VV RRM Peak Repetitive Reverse Voltage V RWM Working Peak Reverse Voltage 100 150 200VV R(RMS)RMS Reverse Voltage 71 106 141 VI O Average Rectified Output Current 200 mAI FSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 1.7 AP D Power Dissipation 250 mWRΘJA Thermal Resistance from Junction to Ambient 500 ℃/WT j Junction Temperature 150 ℃T stg Storage Temperature -55~+150 ℃ELECTRICAL CHARACTERISTICS(T a=25℃unless otherwise specified)Parameter Symbol Testconditions MinTyp Max UnitV R=100V BAV19WS0.1V R=150V BAV20WS0.1Reverse current I RV R=200V BAV21WS0.1uAI F=100mA1Forward voltage V FI F=200mA1.25VTotal capacitance C tot V R=0V,f=1MHz5 pF Reverse recovery time t rr I F= I R =30mA, I rr=0.1*I R50 ns25507510012515011010051015200.40.60.81.01.21.4Forward CharacteristicsReverse CharacteristicsAMBIENT TEMPERATURE Ta ()℃400BAV19WSTypical Characteristics303F O R W A R D C U R R E N T I F (m A )REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )B,Sep,2013。

塑料零部件的通用技术规范和要求详解

塑料零部件的通用技术规范和要求详解

塑料零部件的通用技术规范和要求详解General Technical Requirements for Plastic PartsPlastic parts play a vital role in various industries, ranging from automotive to electronics. To ensure the quality and functionality of plastic parts, there are several general technical requirements that need to be met.1. Material Selection: The choice of plastic material is crucial in determining the performance and durability of plastic parts. Factors such as mechanical properties, chemical resistance, and temperature resistance should be considered when selecting the appropriate material.2. Dimensional Accuracy: Plastic parts should meet specific dimensional tolerances to ensure proper fit and function. This requires precise design and manufacturing processes, including injection molding or 3D printing.3. Surface Finish: The surface finish of plastic parts affects not only their appearance but also their performance. Smoothsurfaces are desirable to prevent friction and improve aesthetics.4. Strength and Durability: Plastic parts should possess sufficient strength and durability to withstand the intended application. This involves considering factors such as load-bearing capacity, impact resistance, and fatigue life.5. Environmental Compatibility: Plastic parts should be designed to be environmentally friendly, considering factors such as recyclability, biodegradability, and the use of eco-friendly materials.6. Assembly and Integration: Plastic parts often need to be assembled or integrated with other components. Compatibility, ease of assembly, and proper integration should be considered to ensure seamless operation.7. Regulatory Compliance: Plastic parts should adhere to applicable regulations and standards, such as safety requirements and material restrictions.中文回答:塑料件通用技术要求塑料件在各个行业中起着重要的作用,从汽车到电子产品都有使用。

S8050 J3Y SOT-23封装 0.5A 25V NPN功率管

S8050 J3Y SOT-23封装 0.5A 25V NPN功率管

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate TransistorsS8050 TRANSISTOR (NPN)FEATURES z Complimentary to S8550 z Collector Current: I C =0.5AMARKING: J3YELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions M in T ypM axU nit Collector-base breakdown voltage V (BR)CBOI C = 100μA, I E =040V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 25VEmitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5V Collector cut-off current I CBO V CB =40 V ,I E =00.1 μA Collector cut-off current I CEO V CB =20V , I E =0 0.1 μA Emitter cut-off currentI EBO V EB = 5V , I C =00.1 μAh FE(1)V CE =1V, I C = 50mA 120400DC current gainh FE(2)V CE =1V, I C = 500mA50Collector-emitter saturation voltage V CE (sat) I C =500 mA, I B = 50mA0.6 V Base-emitter saturation voltage V BE (sat) I C =500 mA, I B = 50mA 1.2 V Transition frequencyf TV CE =6V, I C = 20mAf=30MHz150MHzSOT-23 2. EMITTER 3. COLLECTORCLASSIFICATION OF h FE (1)Rank L HJRange120-200 200-350 300-4001A,Jun,2014D,Oct,2014MAXIMUM RATINGS (T a =25℃ unless otherwise noted)Symbol ParameterValue Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current500 mA P C Collector Power Dissipation300 mW R ΘJA Thermal Resistance From Junction To Ambient 417 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55~+150℃温馨提示:原装长电可用紫光灯辨别真伪!Sxinen品牌:S8050 参考价:0.018101001000102550751001251501002003004000.00.40.81.2D C C U R RE N T G A I N hF ECOLLECTOR CURRENT I C(mA) 30300C O L L E C T O R -E M I T T E R S A T U R A T I O NV O L T A G E V C E s a t (m V )COLLECTOR CURRENT I C (mA)50030103REVERSE VOLTAGE V (V)C A P A C I T A N C E C (p F )T R A N S I T I O N F R E Q U E N C Y f T (M H z )COLLECTOR CURRENT I C (mA)C O L L E C T O R P O W E RD I S S I P A T I O NP C (m W )AMBIENT TEMPERATURE T a ()℃P C —— T a5003C O L L E C T O R C U R R E N T I C (m A )BASE-EMMITER VOLTAGE V BE (V)B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (V )COLLECTOR CURRENT I C (mA)C O L L E C T O R C U R R E N T I C (m A )COLLECTOR-EMITTER VOLTAGE V CE (V)2A,Jun,2014D,Oct,2014Typical CharacteristicsSO T -23 Package Outline DimensionsSO T -23Suggested Pad Layout3A,Jun,2014D,Oct,2014 D,Oct,20144A,Jun,2014。

什么是塑料英文介绍作文

什么是塑料英文介绍作文

什么是塑料英文介绍作文英文:Plastic is a synthetic material that is made from polymers. It is a very versatile material that can be molded into different shapes and used for a variety of purposes. Plastic is used in many everyday items such as water bottles, food containers, toys, and electronics.One of the benefits of plastic is its durability. It can last for a long time without breaking down, which makes it ideal for items that need to last for a long time. Another benefit is its low cost. Plastic is a relatively inexpensive material to produce, which makes it a popular choice for manufacturers.However, plastic is also a major contributor to pollution and environmental damage. Plastic waste can take hundreds of years to decompose, and it can harm wildlife and ecosystems. This is why it is important to recycle andproperly dispose of plastic waste.Despite its drawbacks, plastic remains an important material in our daily lives. It is up to us to use it responsibly and find ways to reduce its impact on the environment.中文:塑料是一种由聚合物制成的合成材料。

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For the semiconductor to conduct we need to provide the electrons with energy greater than the bandgap.
There are two possible sources of energy to excite electron across bandgap: • thermal (heat energy) • light
There are two possible sources of energy to excite electron across bandgap: • thermal (heat energy) • light
bound to atom
heat
light
E hf with f c wavelength
bound to atom
heat
light
E hf with f c wavelength
E kBT
semiconductor
Conduction in semiconductors
electron energy
free to move bandgap
For the semiconductor to conduct we need to provide the electrons with energy greater than the bandgap.
Flexible displays
Benefits for Organic Electronics
• • • • • Weight Flexibility Relatively simple processing Large areas (displays) Cost
Disadvantage: Slow compared to silicon
Cu Fe
Doped
Si Si
{
polyethylene
Organic Light-Emitting Diodes Organic light-emitting diode (OLED)
Anode (Al)
Conjugated Material
Cathode (ITO)
V
Glass
Energy
R.H. Friend et al., Nature 397, 121 (1990)
Applications for Molecular Electronics
• Displays
• Electronic paper • Low-cost chips (e.g. packaging …) • Solar energy
Solar Cell: demonstration
The plotted voltage is proprtional to light intensity – this is shown vs. time
Solarmer
Molecular solar cells
Molecular solar cells
Photosynthesis
Photosynthesis: at the molecular level
Nanophysics group
Summary
• Metals, insulators and semiconductors • Molecules and energy levels • Some new devices made from plastic electronics • Solar energy and world energy requirements • Current developments in molecular solar cells • Photosynthesis: the oldest and most advanced solar cell technology
voltage
time
Organic solar cell
PPV
C60
n
E
Organic solar cell
Glass ITO
Donor
Acceptor
Al
()
PPV C60
n
E
Organic solar cell
Glass ITO
Donor
Acceptor
Al
() ()
PPV C60
n
E
Problem: The exciton can only travel < 20 nm before the electron and hole recombine
conductor
Cu Fe
Doped
Si Si
polyethylene
Conductivity = 1 / Resistivity
insulator
semiconductor
{
Nobel Prize for Chemistry 2000
“For the Discovery and Development of Conductive Polymers”
Energy levels in materials
electron energy single atom many atoms
bandgap
metal
insulator
semiconductor
Conduction in semiconductors
electron energy
free to move bandgap
• Could we make electronics from molecules or plastic? • What would the benefits be?
– Cheaper than silicon to produce – Flexible sheets
• Has anyone seen solar cells made from molecules? Today?
Conductivity scale
s (W-1 cm-1) 106 104 102 1 (100) 10-2 10-4 10-6 10-8 10-10 10-12 10-14 10-16
conductor
Cu Fe
Si
polyethylene
Conductivity = 1 / Resistivity
E kBT
semiconductor
Demo: effect of wavelength of light
electron energy
red 650 nm
violet 470 nm
E hf with
semiconductor
c f wavelength
Semiconductors
Energy
Si Si Si Si Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
light
Si
Si
Si
Si
Semiconductors
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
As Si
Si
Si
As Si
Si
Si
Si
Si
Si
Si
Si
Si
Donor
Semiconductors
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Semiconductors
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
-
+
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Conductivity scale
s (W-1 cm-1) 106 104 102 1 (100) 10-2 10-4 10-6 10-8 10-10 10-12 10-14 10-16
How do molecules act as semiconductors?
We must have alternating single and double bonds
We have: • bound electrons between the atoms in the ring (sp2) • A cloud of partly free electrons above and below the ring (p-electrons)
World in Transition – Towards Sustainable Energy Systems German Advisory Council on Global Change Berlin, 2003
http://www.wbgu.de/wbgu_jg2003_kurz_engl.pdf
Nanophysics group
Organic Electronics
J Emyr Macdonald,
School of Physics and Astronomy
Nanophysics group
Issues
We have had electronics and solar cells made from semiconductors like silicon for years.
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