BYV54V中文资料

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讯风通信北向接口协议.

BxViewIV告警上报方案文档名称版本号编写工具创建日期作者作用执行日期修改日期修改目的修改人版本更改修改日期修改目的修改人执行结论BxViewIV会定时向告警收集服务器发送设备的告警情况，BxViewIV也可以接受告警收集服务器的查询。

用户可以设置定时间隔的时间值，时间间隔以分钟为单位，系统设置了一个保护时间间隔，此值的最小值为20秒，系统默认的间隔时间是5分钟。

BxViewIV最多可以同时上报两个服务器，用户可以对服务器的IP地址和端口进行设置。

在出于对安全方面的考虑，BxViewIV对两个方向上的通信都加上了密码保护，如果密码不正确系统将拒绝接受查询。

两个方向的默认密码都是123456。

通信方式采用以太网UDP/IP方式，TCP方式通信端口主动上报的服务器端口：默认值10300，用户可以设置。

被查询时的客户端端口：默认值10400，用户可以设置。

通信数据结构上报告警信息格式：帧头【3个字节】【A5】【A5】【A5】帧类型【1个字节】【01】帧长【2个字节】密码【12个字节】告警时间【7个字节】（年月日时分秒）网络地址【1个字节】设备地址【1个字节】节点名称长度【1个字节】节点名称【N个字节】【N最大值为255】槽个数【1个字节】【决定接下来的功能盘结构个数】[00] 槽位地址【1个字节】功能盘名称长度【1个字节】功能盘名称【N个字节】【N最大值为255】告警个数【1个字节】【决定接下来的告警结构个数】[00] 告警名称长度【1个字节】告警名称【N个字节】【N最大值为255】告警解释长度【1个字节】告警解释【N个字节】【N最大值为255】告警端口信息长度【1个字节】告警端口信息【N个字节】【N最大值为255】告警状态【1个字节】【01表示告警，00表示正常】[02] 告警名称长度【1个字节】告警名称【N个字节】【N最大值为255】告警解释长度【1个字节】告警解释【N个字节】【N最大值为255】告警端口信息长度【1个字节】告警端口信息【N个字节】【N最大值为255】告警状态【1个字节】【01表示告警，00表示正常】……[FF] 告警名称长度【1个字节】告警名称【N个字节】【N最大值为255】告警解释长度【1个字节】告警解释【N个字节】【N最大值为255】告警端口信息长度【1个字节】告警端口信息【N个字节】【N最大值为255】告警状态【1个字节】【01表示告警，00表示正常】[01] 槽位地址【1个字节】功能盘名称长度【1个字节】功能盘名称【N个字节】【N最大值为255】告警个数【1个字节】[00] 告警名称长度【1个字节】告警名称【N个字节】【N最大值为255】告警解释长度【1个字节】告警解释【N个字节】【N最大值为255】告警端口信息长度【1个字节】告警端口信息【N个字节】【N最大值为255】告警状态【1个字节】【01表示告警，00表示正常】[02] 告警名称长度【1个字节】告警名称【N个字节】【N最大值为255】告警解释长度【1个字节】告警解释【N个字节】【N最大值为255】告警端口信息长度【1个字节】告警端口信息【N个字节】【N最大值为255】告警状态【1个字节】【01表示告警，00表示正常】……[FF] 告警名称长度【1个字节】告警名称【N个字节】【N最大值为255】告警解释长度【1个字节】告警解释【N个字节】【N最大值为255】告警端口信息长度【1个字节】告警端口信息【N个字节】【N最大值为255】告警状态【1个字节】【01表示告警，00表示正常】校验和【1个字节】【校验区中所有字节的和】【校验区是从帧长字节到校验和字节之前】帧尾【3个字节】【5A】【5A】【5A】查询告警信息格式：固定帧长22个字节帧头【3个字节】【93】【93】【93】帧类型【1个字节】【01】密码【12个字节】网络地址【1个字节】设备地址【1个字节】服务器序号【1个字节】校验和【1个字节】【校验区中所有字节的和】【校验区是从密码字节到校验和字节之前】帧尾【3个字节】【39】【39】【39】例如：环境：地址为（1.1）的设备上报6槽（从0开始）V35功能盘RLS的告警。

BYV26资料

Fig.4 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage).
0
0
100
Tamb (oC)
200
BYV26F and G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Switched mode application.
元器件交易网
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV26 series Fast soft-recovery controlled avalanche rectifiers
Product speciﬁcation Supersedes data of February 1994
MSA856
handbook, h1alfpage I F(AV) (A)
0.5
MLB534
0
0
100
Tamb (oC)
200
BYV26A to E a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Switched mode application.
Ttp = 85 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11

4PL中文说明书

选择车辆数据" SEL" ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．39
数据模式的调用
复制车辆数据”COPY”．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．据模式
刹车混合、 4WS 混合、 A.B.S，刹车中位和其他特别的功能
本翻译为技术交流所用，原版权归 FUTABA 所有。未经允许用于商业用途者果自负。
错误指证请联系：thanksky@
Futaba 4 PL 说明书汉化版 BETA 2011/9/21 第一版
RCFANS 首发翻译：飘不见了
复位车辆数据"RESET" ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．41
复位车辆数据
接收器工作模式 " RX MODE " ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．42
车辆数据名称 " MDL NAME " ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．43
舵机中位调整
油门最大值调整 " EPA " ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．46
油门最大值调整
失控保护／电池保护 " F／S"．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．49
失控保护／电池保护
转向舵量曲线" STR EXP" ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．51

RV050中文资料

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。

BYV52资料

Tj = 25°C
IF = 1A VFR = 1.1 x VF
tr = 5 ns
10
ns
VFP
Tj = 25°C
IF = 1A
tr = 5 ns
1.5
V
2/6
元器件交易网
BYV52/PI
Fig.1 : Average forward power dissipation versus Fig.2 : Peak current versus form factor. average forward current.
元器件交易网
®
BYV52/PI
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF
4.10 0.157
0.161
5/6
元器件交易网
BYV52/PI
PACKAGE MECHANICAL DATA TOP3I (isolated)
Marking : Type number Cooling method : C Weight : 4.46 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N

BYV10-40中文资料

®BYV 10- 40SMALL SIGNAL SCHOTTKY DIODES DESCRIPTIONMetal to silicon rectifier diodes in glass case featu-ring very low forward voltage drop and fast recoverytime, intended for low voltage switching mode power supply, polarity protection and high fre-quency circuits.August 1998 Ed : 1A DO 41 (Glass)Symbol Parameter Value Unit I F(AV)Average Forward Current*T amb = 60°C1AI FSM Surge non Repetitive Forward Current T amb = 25°Ct p = 10ms25Sinusoidal PulseAT amb = 25°C t p = 300µs50 Rectangular PulseT stg T j Storage and Junction T emperature Range- 65 to + 150- 65 to + 125°C°CT L Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230°CABSOLUTE RATINGS (limiting values)Symbol Parameter BYV 10-40Unit V RRM Repetitive Peak Reverse Voltage40V* On infinite heatsink with 4mm lead lengthSymbol Test Conditions Value Unit R th(j-a)Junction-ambient*110°C/W * On infinite heatsink with 4mm lead lengthTHERMAL RESISTANCE1/4Symbol Test Conditions Min.Typ.Max.Unit I R *T j = 25°C V R = V RRM0.5mAT j = 100°C10V F*I F = 1A T j = 25°C 0.55VI F = 3A0.85STATIC CHARACTERISTICSELECTRICAL CHARACTERISTICS Symbol Test Conditions Min.Typ.Max.Unit CT j = 25°CV R = 0220pFDYNAMIC CHARACTERISTICS* Pulse test: t p ≤ 300µs δ < 2%.Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes.Nevertheless, when the device switches from for-ward biased condition to reverse blocking state,current is required to charge the depletion capaci-tance of the diode.This current depends only of diode capacitance and external circuit impedance. Satisfactory circuit be-haviour analysis may be performed assuming that Schottky rectifier consists of an ideal diode in pa-rallel with a variable capacitance equal to the junc-tion capacitance (see fig. 5 page 4/4).2/4Fig.1 : Forward current versus forward voltage at low level (typical values).Fig.2 : Forward current versus forward voltage at high level (typical values).BYV 10-40Fig.3 : Reverse current versus junctiontemperature.Fig.4 : Reverse current versus V RRM in percent.Fig.5 : Capacitance C versus reverse applied voltage V R(typical values).Fig.6 : Surge non repetitive forward current for a rectangular pulse with t ≤ 10 ms.3/4BYV 10-40Figure 7. Surge non repetitive forward currentversus number of cycles.4/4Marking : clear, ring at cathode end.Cooling method : by convection and conduction Weight: 0.33gPACKAGE MECHANICAL DATA DO 41 GlassCABO /O /DO /DCREF .DIMENSIONSMillimeters Inches Min.Max.Min.Max.A 4.07 5.200.1600.205B2.04 2.710.0800.107C 28 1.102D0.7120.8630.0280.034Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - MalaysiaMalta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.BYV 10-40。

BYV32中文资料

BYV32,BYVF32 & BYVB32 SeriesVishay Semiconductorsformerly General SemiconductorDocument Number Reverse Voltage 50 to 200VForward Current 18AReverse Recovery Time25nsMounting Pad Layout TO-263ABITO-220AB (BYVF32 Series)TO-220AB (BYV32 Series)TO-263AB (BYVB32 Series)Features• Plastic package has Underwriters Laboratory Flammability Classification 94V-0• Dual rectifier construction, positive centertap • Glass passivated chip junctions • Low power loss• Low forward voltage, high current capability • High surge current capability• Superfast recovery times for high efficiencyMechanical DataCase:JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic bodyTerminals:Plated leads, solderable per MIL-STD-750, Method 2026High temperature soldering guaranteed:250°C, 0.16" (4.06mm) from case for 10 seconds Polarity:As marked Mounting Position:Any Mounting Torque:10 in-lbs maximum Weight:0.08 oz., 2.24 gBYV32,BYVF32 & BYVB32 SeriesVishay Semiconductorsformerly General Semiconductor Document Number 88558Maximum Ratings (TC= 25°C unless otherwise noted)ParameterSymbol BYV32-50BYV32-100BYV32-150BYV32-200Unit Maximum repetitive peak reverse voltage V RRM 50100150200V Maximum RMS voltage V RMS 3570105140V Maximum DC blocking voltageV DC 50100150200V Maximum average forward rectified current at T C = 125°C I F(AV)18A Peak forward surge current8.3ms single half sine-wave superimposed I FSM 150A on rated load (JEDEC Method) per legOperating junction and storage temperature range T J , T STG –65 to +150°C RMS Isolation voltage (BYVF type only) from terminals to 4500 (1)heatsink with t = 1.0 second, RH ≤30%V ISOL3500 (2)V1500 (3)Electrical Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol BYV32-50BYV32-100BYV32-150BYV32-200Unit Maximum instantaneous forward voltage per leg at:(4)at I F = 20AV F1.15Vat I F = 5.0A,T J = 100°C 0.85Maximum DC reverse current per leg T J = 25°C 10at rated DC blocking voltageT J = 100°CI R 600µA Maximum reverse recovery time per leg atI F = 1A, V R = 30V , di/dt = 100A/µs, I rr = 10% I RM t rr 25ns Typical junction capacitance per leg at 4V , 1MHzC J45pFThermal Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol BYV BYVF BYVB Unit Thermal resistance from junction to case per legR ΘJC1.65.01.6°C/WNotes:(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110”offset (2) Clip mounting (on case), where leads do overlap heatsink(3) Screw mounting with 4-40 screw, where washer diameter is ≤4.9mm (0.19”)(4) Pulse test:300µs pulse width, 1% duty cycleBYV32,BYVF32 & BYVB32 SeriesVishay Semiconductorsformerly General SemiconductorDocument Number Ratings andCharacteristic Curves (T A = 25°C unless otherwise noted)I F – I n s t a n t a n e o u s F o r w a r d C u r r e n t (A )1001010.10.01Maximum Non-Repetitive Peak Forward Surge Current Per Leg4.01618208.0A v e r a g e F o r w a r d R e c t i f i e d C u r r e n t (A )1211010010020********Reverse Voltage (V)p F – J u n c t i o n C a p a c i t a n c eForward Current Derating Curve。

bp6904中文规格书

bp6904中文规格书Firstly, it is important to understand the nature of the bp6904中文规格书. This document is likely a technical specification book written in Chinese, possibly related to a specific product or industry. It may contain detailed information about the specifications, features, and functions of a particular product or system. The problem arises when individuals who do not understand Chinese need to access and comprehend the information contained in this document.One possible solution to this problem is to seek out a professional translation of the bp6904中文规格书. By engaging the services of a qualified translator or translation agency, it may be possible to obtain an accurate and reliable English version of the document. This would enable non-Chinese speakers to access the information and gain a better understanding of the specifications and technical details outlined in the document.Another approach to addressing this issue is to seek assistance from bilingual individuals or colleagues who are proficient in both Chinese and English. By enlisting the help of someone who can accurately translate and explain the content of the bp6904中文规格书, it may be possible to overcome the language barrier and gain a clearer understanding of the information presented in the document.Furthermore, it may be beneficial to explore the possibility of accessing similar technical specifications or resources in English. If the specific details contained in the bp6904中文规格书 are related to a particular product or industry, it is likely that similar information is available in English. By conducting research and seeking out alternative sources of information, it may be possible to gain a more comprehensive understanding of the specifications and technical details that are relevant to the document in question.In addition to seeking out translations and alternative sources of information, it is important to consider the potential implications of misunderstanding ormisinterpreting the content of the bp6904中文规格书. In technical and industrial contexts, accurate understanding of specifications and technical details is crucial for ensuring safety, compliance, and effective use of products and systems. Therefore, it is essential to take the necessary steps to address the language barrier and gain a clear understanding of the information presented in the document.Finally, it is important to recognize the value of clear and accessible communication in technical and industrial settings. The existence of language barriers should not hinder the ability of individuals to access and understand important technical information. By addressing the problem of the bp6904中文规格书 and finding effective solutions to overcome the language barrier, it is possible to promote better communication, understanding, and collaboration in diverse and multilingual environments. This, in turn, can contribute to improved safety, efficiency, and innovation in various industries and sectors.。

广电五舟 S724E5 服务器用户手册说明书

用户手册五舟AMD高性能高扩展通用服务器S724E5广州广电五舟科技股份有限公司声明感谢您选择广电五舟产品：•本手册的用途在于帮助您正确地使用广电五舟服务器产品（以下称“本产品”），在安装和第一次使用本产品前，请您务必先仔细阅读随机配送的所有资料，特别是本手册中所提及的注意事项。

这会有助于您更好和安全地使用本产品。

请妥善保管本手册，以便日后参阅。

•本手册的描述并不代表对本产品规格和软、硬件配置的任何说明。

有关本产品的实际规格和配置，请查阅相关协议、装箱单、产品规格配置描述文件，或向产品的销售商咨询。

•如您不正确地或未按本手册的指示和要求安装、使用或保管本产品，或让非广电五舟授权的技术人员修理、变更本产品，广电五舟将不对由此导致的损害承担任何责任。

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10 INCH-D-4V;5 INCH-G-4V;1 MBAR-D-4V;10 INCH-G-4V;5 INCH-D-4V;中文规格书,Datasheet资料

DS-0024 Rev C
Amplified Low Pressure Sensors
/
Performance Characteristics for 1 INCH-D-4V
Parameter, note 1 Operating Range, differential pressure Output Span, note 5 Offset Voltage @ zero differential pressure Offset Temperature Shift (5°C-50°C), note 2 Offset Warm-up Shift, note 3 Offset Position Sensitivity (±1g) Offset Long Term Drift (one year) Linearity, hysteresis error, note 4 Span Temperature Shift (5°C-50°C), note 2 ±10 ±5 ±10 0.05 0.25 ±2 ±1.90 2.15 Minimum Nominal ±1.0 ±2.0 2.25 ±2.10 2.35 ±60 Maximum Units inH2O V V mV mV mV mV %FSS
Applications
• Medical Instrumentation • Environmental Controls • HVAC
General Description
The Amplified line of low pressure sensors are based upon a proprietary technology to reduce all output offset or common mode errors. This model provides a ratiometric 4-volt output with superior output offset characteristics. Output offset errors due to change in temperature, stability to warm-up, stability to long time period, and position sensitivity are all significantly reduced when compared to conventional compensation methods. In addition the sensor utilizes a silicon, micromachined, stress concentration enhanced structure to provide a very linear output to measured pressure. These calibrated and temperature compensated sensors give an accurate and stable output over a wide temperature range. This series is intended for use with non-corrosive, non-ionic working fluids such as air, dry gases and the like. The output of the device is ratiometric to the supply voltage over a supply voltage range of 4.5 to 5.5 volts.

V54C3256164VBS中文资料

All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock.
Operating the four memory banks in an interleaved fashion allows random access operation to occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up to 166 MHz is possible depending on burst length, CAS latency and speed grade of the device.
referenced to clock rising edge ■ Single Pulsed RAS Interface ■ Data Mask for Read/Write Control ■ Four Banks controlled by BA0 & BA1 ■ Programmable CAS Latency: 2, 3 ■ Programmable Wrap Sequence: Sequential or
TSOP TSOP TSOP
WBGA WBGA WBGA
SOC BGA SOC BGA SOC BGA
V54C3256(16/80/40)4V(T/S/B) Rev. 1.6 September 2002
2
元器件交易网
MOSEL VITELIC

Poly VVX 150、VVX 250、VVX 350 和 VVX 450 商业 IP 电话（OB

RELEASE NOTES Software 6.4.2 | March 2021 | 3725-85482-005A Poly OBi EditionApplies to Poly VVX150, VVX250, VVX350, and VVX450 Business IP Phones, OBi EditionContentsWhat’s New in This Release (1)Release History (4)Security Updates (6)Resolved Issues (6)Known Issues (6)System Constraints and Limitations (6)Get Help (7)Privacy Policy (7)Copyright and Trademark Information (8)What’s New in This ReleaseThese release notes provide information on software updates, phone features, and known issues for Poly VVX 150, VVX 250, VVX 350, and VVX 450 business IP phones, OBi Edition.This release includes the following features:●AES 256-bit Encryption Support for SRTP●SIPS+D2T and SIP-D2S Support for NAPTR Records●Enabling and Disabling the Handset●Enabling and Disabling the Speaker Button and Headset Button●Showing Notification Icons for Disabled Handset, Speaker Button, and Headset Button●Support for 4G LTE Network Access for VVX 350 and VVX 450PLANTRONICS + POLYCOMAES 256-bit Encryption Support for SRTPThis release includes the new X_SRTPCryptos parameter in the SP n Service web page from the phone, where n = 1-6. You can find this parameter on the IP Phone > Phone Settings > Calling Features page in the system web interface.Configure the order of cryptos using the following format:●AES{kbits}CM-SHA1{abits} where {kbits} = 192 or 256 and {abits} = 32 or 80.This release also includes support for AES{kbits}GCM where {kbits} = 256.SIPS+D2T and SIP-D2S Support for NAPTR Records SIPS+D2T and SIP-D2S handling is supported in NAPTR records.Enabling and Disabling the HandsetYou can enable or disable the handset for your phones by specifying options in the new HandsetEnable parameter. You can find this parameter on the IP Phone > Phone Settings > Calling Features page in the system web interface.Enabling and Disabling the Speaker Button and Headset ButtonYou can enable or disable the speaker button and headset button for your phones by specifying options in the new SpeakerKeyEnable and HeadsetKeyEnable parameters. Find these parameters on the IP Phone > Phone Settings > Calling Features page in the system web interface.Showing Notification Icons for Disabled Handset, Speaker Button, and Headset ButtonNotification icons are displayed by default when you disable the handset, speaker button, or headset button.To hide the icons, set the following parameters:●Phone Settings — Calling Features::ShowHandsetDisabledIcon = false●Phone Settings — Calling Features::ShowSpeakerDisabledIcon = false●Phone Settings — Calling Features::ShowHeadsetDisabledIcon = falseFor more information on these new features, see the Poly VVX Business IP Phones, OBi Edition Administrator Guide, located at the Poly Online Support Center.Support for 4G LTE Network Access for VVX 350 and VVX 450VVX 350 and VVX 450 business IP phones (OBi2 SKU only) enable voice over a 4G LTE network when you install the TITAN 4G LTE USB Dongle or the NetStick 4G LTE USB Dongle.TITAN/NetStick Notification IconsThree new notification icons provide status information when you connect a TITAN/NetStick 4G LTE USB dongle:•Connected and Active: The USB dongle is connected and operational, and the phone is using it for all network traffic.•Connected and Inactive: The USB dongle is connected and operational, but the phone isn’t using it for network traffic.•Signal Strength: Displays the 4G LTE signal strength (0 to 5 bars)4G LTE Status In Network SettingsThis release includes the new ShowLteNotFoundInSettingsNetwork parameter. Find this parameter on the IP Phone > Phone Settings > Calling Features page in the system web interface.The default value of the parameter is false. If the value of the parameter is True, then the message LTE Device NOT found displays in Network Settings when the phone doesn’t detect the USB dongle.If the phone detects the USB dongle, then the following statistics display in Network Settings:•RSSI (dBm): Maps to the Signal Strength notification icon.•RSRP, RSSQ, SINR, TxPwr: For information about these statistics, see the TITAN/NetStick documentation provided by Global Telecom Engineering.•Software and firmware versions of the USB dongle.TITAN/NetStick Disconnection MessageWhen the USB dongle is disconnected during normal operation, a dialog informs you that an LTE USB device is disconnected.When you reconnect the USB dongle and it’s operating normally, the message stops displaying.Real-time 4G LTE Statistics During a CallWhen you enable 4G LTE, you can view real-time RSSI (Mx/Mn/Av) statistics during a call.To view these statistics, press OK when the Call item displays on the screen. If needed, press theup/down key to highlight the call item.You can view the following RSSI (Mx/Mn/Av) statistics:●Current RSSI (dBM)●Maximum, minimum, and average RSSI recorded so far during the callFor example: RSSI (Mx/Mn/Av): -78 (-75/-82/-79)4G LTE Statistics Stored In Call HistoryThe following statistics are available in Call History when you use 4G LTE for the call: •LTE RSSI MAX, LTE RSSI MIN, LTE RSSI AVG: Stores the corresponding RSSI values recorded at the end of a call.•LTE Down At: If present, shows the time offset (in seconds) from the beginning of the call when the last LTE Down event occurred during the call. If the event happens more than once duringthe call, then the phone logs only the last event.4G LTE Statistics Reported In SIP MessagesIn SIP BYE or in responses to SIP BYE messages, the X-RTP-Stat header includes the following statistics when you end an established LTE call:•RSSI-MAX, RSSI-MIN, RSSI-AVG: The corresponding RSSI values (in dBm) recorded at the end of the call.•LTE-Down-Mark: If present, shows the time offset (in seconds) from the beginning of the call to the last LTE Down event during the call.Release HistoryThis following table lists the release history of Poly VVX business IP phones, OBi Edition.Release HistoryRelease APIRelease Date FeaturesRelease6.4.2 6.4.2 March 2021 This release includes important field fixes and support for thefollowing features:•AES 256-bit encryption support for SRTP•SIPS+D2T and SIP-D2S support for NAPTR records•Enabling and disabling the handset•Enabling and disabling the speaker button and headset button•Showing notification icons for disabled handset, speakerbutton, and headset button•Support for 4G LTE network access for VVX 350 and VVX 450Release APIRelease Date FeaturesRelease6.4.1 6.4.1 December 2019 This release includes important field fixes and support for thefollowing features:•Enhanced Opus support•Generic hot-desking without reboot•Local phone book import and export•Main menu customization enhancement•Custom notification icon enhancements•Enhanced caller ID logging in call history•Emergency call web hook•Page group enhancements•Clear local phone books and call histories•EM50 background picture customization•Progress alert messages customization•Internal string customization•QR code generation•Support for Cisco Discovery Protocol (CDP)•Hold notification tone6.4.0 6.4.0 July 2019 This release includes important field fixes and support for thefollowing features:•Support for SideCar/Expansion Module (EM50) on VVX 450•Support for streaming live phone audio to NLP (NaturalLanguage Processing)•Support for USB flash drive for transferring user-generatedcontent6.3.1 6.3.1 February 2019 This release includes important field fixes and support for thefollowing features:•DNS NAPTR Support•Enable call quality report back to PDMS-SP•Language selection•Password masking for hoteling login•Removed prefix in Number Field for BroadSoft remote officefeature•Search phone book contacts list•Wi-Fi address change reboot confirmation•Background firmware update•3CX plug-and-play provisioning with uaCSTA support•Phone app shows all pages of line keys on screen•Web hooks for call events6.3.0 6.3.0November 2018Initial release of OBi Edition on VVX business IP phonesSecurity UpdatesPlease refer to the Poly Security Center for information for information about known and resolved security vulnerabilities.Resolved IssuesThe following table lists the resolved issues for Poly VVX business IP phones, OBi Edition 6.4.2. Resolved IssuesCategory Issue ID DescriptionCalling EN-199108 If you use SRTP for a call and the peer offers multiple cryptos, the phonemay incorrectly indicate the selected crypto in the reply to the peer.Therefore, the call has no audio.Calling EN-199104 The phone sends an a=recvonly attribute in SDP when resuming a callthat the peer placed on hold. The attribute may cause the resume operationto fail with some service providers.Calling EN-199097 If the userinfo@ data is missing from the SIP INVITE message, ashared-line call may fail to resume with certain service providerdeployments.Calling EN-187006 If you set the SRTP option to Use SRTP When Possible and the peersends a re-INVITE with an offer SDP that is an audit, the call might haveno audio.Calling EN-185365 If a user sets up a voice call using the OPUS codec, the DTMF event digitduration calculation is wrong, creating a timing issue.Device Management EN-189690 If the ConfigURL configuration parameter includes the syntax to query the status of an expansion module connection and the expansion module isn’tpowered on or connected, the phone enters into a reboot loop on startup.User Interface EN-183517 Some ringtones cause speaker distortion at a high volume. Known IssuesThere are no known issues in this release.System Constraints and LimitationsThis release includes the following constraints and limitations when using Poly VVX 350 and VVX 450 business IP phones, OBi Edition:●When you use 4G LTE for network traffic, upgrading the software over 4G LTE is not supported inPoly UPDATER and is automatically disabled. To upgrade software using UPDATER, use Ethernet or Wi-Fi.•When you use 4G LTE for network traffic, upgrading the software over 4G LTE is supported when using the background software update option with the .fw firmware format.You must convert the phone to use the .fw firmware format. For OBi or OBi2 SKUs, the phones ship from the factory with the .fw firmware preloaded.During the background software update, the .fw file downloads over 4G LTE while the phone is in normal operation. However, the .fw file download halts and postpones during a call. Get HelpFor more information about installing, configuring, and administering Poly/Polycom products or services, go to the Poly Online Support Center.Related Poly and Partner ResourcesSee the following sites for information related to this product.●The Poly Online Support Center is the entry point to online product, service, and solution supportinformation including Video Tutorials, Documents & Software, Knowledge Base, CommunityDiscussions, Poly University, and additional services.●The Poly Document Library provides support documentation for active products, services, andsolutions. The documentation displays in responsive HTML5 format so that you can easily access and view installation, configuration, or administration content from any online device.●The Poly Community provides access to the latest developer and support information. Create anaccount to access Poly support personnel and participate in developer and support forums. You can find the latest information on hardware, software, and partner solutions topics, share ideas, and solve problems with your colleagues.●The Poly Partner Network is a program where resellers, distributors, solutions providers, andunified communications providers deliver high-value business solutions that meet critical customer needs, making it easy for you to communicate face-to-face with the applications and devices you use every day.●The Poly Services help your business succeed and get the most out of your investment through thebenefits of collaboration.Privacy PolicyPoly products and services process customer data in a manner consistent with the Poly Privacy Policy. Please direct comments or questions to ****************.Copyright and Trademark Information© 2021 Plantronics, Inc. All rights reserved. No part of this document may be reproduced, translated into another language or format, or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express written permission of Plantronics, Inc.Plantronics, Inc. (Plantronics + Polycom, Now together as Poly)345 Encinal StreetSanta Cruz, California95060Poly and the propeller design are trademarks of Plantronics, Inc. All other trademarks are the property of their respective owners.。

BYV74中文资料

Dual rectifier diodes BYV74 seriesultrafastGENERAL DESCRIPTIONQUICK REFERENCE DATAGlass passivated,high efficiency SYMBOL PARAMETERMAX.MAX.MAX.UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop,BYV74-300400500ultra fast reverse recovery times and V RRM Repetitive peak reverse 300400500V soft recovery characteristic.They are voltageintended for use in switched mode V F Forward voltage1.12 1.12 1.12V power supplies and high frequency I O(AV)Average output current 303030A circuits in general,where both low (both diodes conducting)conduction losses and low switching t rrReverse recovery time606060nslosses are essential.PINNING - SOT93PIN CONFIGURATIONSYMBOLLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT -300-400-500V RRM Repetitive peak reverse voltage -300400500V V RWM Crest working reverse voltage -300400500V V R Continuous reverse voltage T mb ≤ 136˚C -300400500V I O(AV)Average output current (both square wave; δ = 0.5;-30A diodes conducting)1T mb ≤ 94 ˚Csinusoidal; a = 1.57;-27A T mb ≤ 98 ˚CI O(RMS)RMS output current (both -43A diodes conducting)I FRM Repetitive peak forward current t = 25 µs; δ = 0.5;-30A per diodeT mb ≤ 94 ˚C I FSMNon-repetitive peak forward t = 10 ms -150A current per diode.t = 8.3 ms-160A sinusoidal; with reapplied V RRM(max)I 2t I 2t for fusingt = 10 ms-112A 2s T stg Storage temperature-40150˚C T jOperating junction temperature-150˚C1 Neglecting switching and reverse current losses.For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITRth j-hs Thermal resistance junction to per diode-- 2.4K/W heatsink both diodes conducting-- 1.4K/WRth j-a Thermal resistance junction to in free air.-45-K/W ambientSTATIC CHARACTERISTICSTj= 25 ˚C unless otherwise statedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITVF Forward voltage (per diode)IF= 15 A; Tj= 150˚C-0.95 1.12VIF= 15 A- 1.08 1.25VIF= 30 A- 1.15 1.36VI R Reverse current (per diode)VR= VRRM-1050µAVR= VRRM; Tj= 100 ˚C-0.30.8mADYNAMIC CHARACTERISTICSTj= 25 ˚C unless otherwise statedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITQs Reverse recovery charge (per IF= 2 A to VR≥ 30 V;-4060nC diode)dIF/dt = 20 A/µst rr Reverse recovery time (per IF= 1 A to VR≥ 30 V;-5060ns diode)dIF/dt = 100 A/µsI rrm Peak reverse recovery current IF= 10 A to VR≥ 30 V;- 4.2 5.2A (per diode)dIF/dt = 50 A/µs; Tj= 100˚CVfr Forward recovery voltage (per IF= 10 A; dIF/dt = 10 A/µs- 2.5-V diode)MECHANICAL DATANotes1. Refer to mounting instructions for SOT93 envelope.2. Epoxy meets UL94 V0 at 1/8".DEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1996All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。

BYV38中文资料

Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode Capacitance Test Conditions IF=1A Tj=150°C IF=0.5A, IR=1A, iR=0.25A VR=4V, f=1MHz Type Symbol VF IR IR trr CD Min Typ 1.0 Max 1.1 5 150 300 Unit V mA mA ns pF
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
www.vishay.de • FaxBack +1-408-970-5600 2 (4)
Document Number 86045 Rev. 2, 24-Jun-98
元器件交易网
l
RthJA=100K/W PCB: d=25mm
94 9552
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 4. Max. Average Forward Current vs. Ambient Temperature
10
500 PR – Reverse Power Dissipation ( mW ) 450 400 350 300 250 200 150 100 50 0 25
15774
VR = VRRM IF – Forward Current ( A ) RthJA= 45K/W 100K/W 160K/W Tj = 175°C 1 Tj = 25°C 0.1 0.01