BAV74-JA中文资料

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74系列芯片功能总汇

74系列芯片功能总汇1.基本逻辑门芯片：-74LS00：四输入与非门-74LS02：四输入与门-74LS04：六反相器门-74LS08：四输入与门-74LS32：四输入或门2.触发器芯片：-74LS74：双D触发器-74LS76：双JK触发器3.移位寄存器芯片：-74LS95：四位并行存储器-74LS164：八位串行输入并行输出移位寄存器4.计数器芯片：-74LS90：十进制计数器-74LS93：二进制计数器-74LS191：四位并行访问计数器5.译码器/编码器芯片：-74LS138：三到八译码器-74LS148：八到三译码器-74LS151：八输入多路选择器6.多路开关芯片：-74LS151：八输入多路选择器-74LS153：双四输入多路选择器-74LS157：四输入数据选择/多功能门7.模拟开关芯片：-74LS240：八位双向缓冲器-74LS541：八位缓冲/驱动器8.显示驱动芯片：-74LS47：BCD-七段LED显示驱动器9.存储器芯片：-74LS85：四位二进制比较器-74LS86：四输入异或门-74LS138：三到八译码器10.时序逻辑芯片：-74LS121：单稳态多谐振荡器-74LS123：可编程多谐振荡器-74LS125：四路三态缓冲器11.数据选择器/复用器芯片：-74LS151：八输入多路选择器-74LS153：双四输入多路选择器12.数据驱动器芯片：-74LS244：八位缓冲/驱动器13.时钟频率分频器芯片：-74LS390：双五位二进制分频器14.辅助功能芯片：-74LS368：八位全通滤波器-74LS393：双四位二进制计数器15.存储器扩展芯片：-74LS670：四位四进制加法器-74LS688：八位比较器/译码器16.控制器芯片：-74LS592：八位可移位输入存储器-74LS595：八位移位存储器这些仅仅是74系列芯片中的一小部分，并且还有许多其他功能的芯片未被列举出来。

74系列芯片数据手册大全

74系列芯片数据手册大全【强烈推荐】74系列集成电路名称与功能常用74系列标准数字电路的中文名称资料7400 TTL四2输入端四与非门7401 TTL 集电极开路2输入端四与非门7402 TTL 2输入端四或非门7403 TTL 集电极开路2输入端四与非门7404 TTL 六反相器7405 TTL 集电极开路六反相器7406 TTL 集电极开路六反相高压驱动器7407 TTL 集电极开路六正相高压缓冲驱动器7408 TTL 2输入端四与门7409 TTL 集电极开路2输入端四与门7410 TTL 3输入端3与非门74107 TTL 带清除主从双J-K触发器74109 TTL 带预置清除正触发双J-K触发器7411 TTL 3输入端3与门74112 TTL 带预置清除负触发双J-K触发器7412 TTL 开路输出3输入端三与非门74121 TTL 单稳态多谐振荡器74122 TTL 可再触发单稳态多谐振荡器74123 TTL 双可再触发单稳态多谐振荡器74125 TTL 三态输出高有效四总线缓冲门74126 TTL 三态输出低有效四总线缓冲门7413 TTL 4输入端双与非施密特触发器74132 TTL 2输入端四与非施密特触发器74133 TTL 13输入端与非门74136 TTL 四异或门74138 TTL 3-8线译码器/复工器74139 TTL 双2-4线译码器/复工器7414 TTL 六反相施密特触发器74145 TTL BCD—十进制译码/驱动器7415 TTL 开路输出3输入端三与门74150 TTL 16选1数据选择/多路开关74151 TTL 8选1数据选择器74153 TTL 双4选1数据选择器74154 TTL 4线—16线译码器74155 TTL 图腾柱输出译码器/分配器74156 TTL 开路输出译码器/分配器74157 TTL 同相输出四2选1数据选择器74158 TTL 反相输出四2选1数据选择器7416 TTL 开路输出六反相缓冲/驱动器74160 TTL 可预置BCD异步清除计数器74161 TTL 可予制四位二进制异步清除计数器74162 TTL 可预置BCD同步清除计数器74163 TTL 可予制四位二进制同步清除计数器74164 TTL 八位串行入/并行输出移位寄存器74165 TTL 八位并行入/串行输出移位寄存器74166 TTL 八位并入/串出移位寄存器74169 TTL 二进制四位加/减同步计数器7417 TTL 开路输出六同相高压缓冲/驱动器74170 TTL 开路输出4×4寄存器堆74173 TTL 三态输出四位D型寄存器74174 TTL 带公共时钟和复位六D触发器74175 TTL 带公共时钟和复位四D 触发器74180 TTL 9位奇数/偶数发生器/校验器74181 TTL 算术逻辑单元/函数发生器74185 TTL 二进制—BCD代码转换器74190 TTL BCD同步加/减计数器74191 TTL 二进制同步可逆计数器74192 TTL 可预置BCD双时钟可逆计数器74193 TTL 可预置四位二进制双时钟可逆计数器74194 TTL 四位双向通用移位寄存器74195 TTL 四位并行通道移位寄存器74196 TTL 十进制/二-十进制可预置计数锁存器74197 TTL 二进制可预置锁存器/计数器7420 TTL 4输入端双与非门7421 TTL 4输入端双与门7422 TTL 开路输出4输入端双与非门74221 TTL 双/单稳态多谐振荡器74240 TTL 八反相三态缓冲器/线驱动器74241 TTL 八同相三态缓冲器/线驱动器74243 TTL 四同相三态总线收发器74244 TTL 八同相三态缓冲器/线驱动器74245 TTL 八同相三态总线收发器74247 TTL BCD—7段15V输出译码/驱动器74248 TTL BCD—7段译码/升压输出驱动器74249 TTL BCD—7段译码/开路输出驱动器7425 双4输入端或非门(有选通端74251 TTL 三态输出8选1数据选择器/复工器74253 TTL 三态输出双4选1数据选择器/复工器74256 TTL 双四位可寻址锁存器74257 TTL 三态原码四2选1数据选择器/复工器74258 TTL 三态反码四2选1数据选择器/复工器74259 TTL 八位可寻址锁存器/3-8线译码器7426 TTL 2输入端高压接口四与非门缓冲器74260 TTL 5输入端双或非门74266 TTL 2输入端四异或非门7427 TTL 3输入端三或非门74273 TTL 带公共时钟复位八D触发器74279 TTL 四图腾柱输出S-R锁存器7428 TTL 2输入端四或非门缓冲器74283 TTL 4位二进制全加器74290 TTL 二/五分频十进制计数器74293 TTL 二/八分频四位二进制计数器74295 TTL 四位双向通用移位寄存器74298 TTL 四2输入多路带存贮开关74299 TTL 三态输出八位通用移位寄存器7430 TTL 8输入端与非门7432 TTL 2输入端四或门74322 TTL 带符号扩展端八位移位寄存器74323 TTL 三态输出八位双向移位/存贮寄存器7433 TTL 开路输出2输入端四或非缓冲器74347 TTL BCD—7段译码器/驱动器74352 TTL 双4选1数据选择器/复工器74353 TTL 三态输出双4选1数据选择器/复工器74365 TTL 门使能输入三态输出六同相线驱动器74365 TTL 门使能输入三态输出六同相线驱动器74366 TTL 门使能输入三态输出六反相线驱动器74367 TTL 4/2线使能输入三态六同相线驱动器74368 TTL 4/2线使能输入三态六反相线驱动器7437 TTL 开路输出2输入端四与非缓冲器74373 TTL 三态同相八D锁存器74374 TTL 三态反相八D锁存器74375 TTL 4位双稳态锁存器74377 TTL 单边输出公共使能八D锁存器74378 TTL 单边输出公共使能六D 锁存器74379 TTL 双边输出公共使能四D锁存器7438 TTL 开路输出2输入端四与非缓冲器74380 TTL 多功能八进制寄存器7439 TTL 开路输出2输入端四与非缓冲器74390 TTL 双十进制计数器74393 TTL 双四位二进制计数器7440 TTL 4输入端双与非缓冲器7442 TTL BCD—十进制代码转换器7443 4线-10线译码器(余3码输入)7444 4线-10线译码器(余3葛莱码输入) 74447 TTL BCD—7段译码器/驱动器7445 TTL BCD—十进制代码转换/驱动器74450 TTL 16:1多路转接复用器多工器74451 TTL 双8:1多路转接复用器多工器74453 TTL 四4:1多路转接复用器多工器7446 TTL BCD—7段低有效译码/驱动器74460 TTL 十位比较器74461 TTL 八进制计数器74465 TTL 三态同相2与使能端八总线缓冲器74466 TTL 三态反相2与使能八总线缓冲器74467 TTL 三态同相2使能端八总线缓冲器74468 TTL 三态反相2使能端八总线缓冲器74469 TTL 八位双向计数器7447 TTL BCD—7段高有效译码/驱动器7448 TTL BCD—7段译码器/内部上拉输出驱动7449 4线-7段译码器74490 TTL 双十进制计数器74491 TTL 十位计数器74498 TTL 八进制移位寄存器7450 TTL 2-3/2-2输入端双与或非门74502 TTL 八位逐次逼近寄存器74503 TTL 八位逐次逼近寄存器7451 TTL 2-3/2-2输入端双与或非门7452 4路2-3-2-2输入与或门7453 4路2-2-2-2输入与或非门74533 TTL 三态反相八D锁存器74534 TTL 三态反相八D锁存器7454 TTL 四路输入与或非门74540 TTL 八位三态反相输出总线缓冲器7455 TTL 4输入端二路输入与或非门74563 TTL 八位三态反相输出触发器74564 TTL 八位三态反相输出D触发器74573 TTL 八位三态输出触发器74574 TTL 八位三态输出D触发器7460 双4输入与扩展器7461 三3输入与扩展器7462 4路2-3-3-2输入与或扩展器7464 4路4-2-3-2输入与或非门74645 TTL 三态输出八同相总线传送接收器7465 4路4-2-3-2输入与或非门(OC)74670 TTL 三态输出4×4寄存器堆7470 与门输入J-K触发器√7471 与或门输入J-K触发器√7472 与门输入J-K触发器7473 TTL 带清除负触发双J-K触发器7474 TTL 带置位复位正触发双上升沿D触发器7476 TTL 带预置清除双J-K 触发器7478 双D型触发器7483 TTL 四位二进制快速进位全加器7485 TTL 四位数字比较器7486 TTL 2输入端四异或门7487 4位二进制原码/反码7490 TTL 可二/五分频十进制计数器7493 TTL 可二/八分频二进制计数器7495 TTL 四位并行输入\输出移位寄存器7497 TTL 6位同步二进制乘法器74101 与或门输入J-K触发器74102 与门输入J-K触发器74107 双主-从J-K触发器74108 双主-从J-K触发器74109 双主-从J-K触发器74110 与门输入J-K触发器74111 双主-从J-K触发器74112 双下降沿J-K触发器113 双下降沿J-K触发器114 双下降沿J-K触发器116 双4位锁存器120 双脉冲同步驱动器121 单稳态触发器122 可重触发单稳态触发器123 可重触发双稳态触发器125 四总线缓冲器126 四总线缓冲器128 四2输入端或非线驱动器132 四2输入端与非门。

74系列芯片功能介绍

功能表见74110、
74LS112A 74F112、74ALS112 74S112、74HC112双J-K负沿触发器
（带预置和清除端）
功能表
74LS113A 74S113 74F113、74ALS113 74HC113双J-K负沿触发器
（带预置）
功能表
74LS114A 74F114 74ALS114 74F114 74HC114双J-K负沿触发器
端）
功能表
7480门输入全加器
功能表
7482 2位二进制全加器
执行两个2位二进制的加法，每一位都有和（艺）输出，由第二位产
生最后的进位（C2）。
功能表
7483A、74LS83A、74HC83、74C834位二进制全加器（带超前进位）功能表
执行两个4位二进制数加法，每位有一个和（艺）输出，最后的进位
74C20双四输入与非门
Y=/ABCD
7421、74F21、74ALS21、74LS21、74HC21双四输入与门
Y=ABCD
7422、74H22 74LS22、74S22、74ALS22 74HC22双四输入与非门（OC
Y二/ABCD是74XX20的集电极开路型。
7423可扩展双4输入或非门（带选通端）
复位/计数功能表7491A、74L91、74LS91、74HC918位移位寄存器
7492A、74LS92、74HC92十二分频计数器二分频和六分频；有复位输入。
7493A、74L93、74LS93、74HC93、74C934位二进制计数器二分频和六分频；有复位输入。
功能表
7494 4位寄存器执行右移操作，用作串入串出寄存器或双源并串转换器。预置功能表（位A，所有的典型）7495A、74LS95B、74HC95、74C954位并行存取移位寄存器具有并行和串行输入、并行输出、模式控制和二个时钟输入；有三种运算方式，并行写入、右移（方向从QA向QD、左移（方向从QD向QA）。

BAV70;BAV74;BAV70_D87Z;BAV74_D87Z;中文规格书,Datasheet资料

BAV70 / 74Small Signal DiodeAbsolute Maximum Ratings * T A= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of the diode may be impaired.NOTES:1)These ratings are based on a maximum junction temperature of 150 degrees C.2)These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal CharacteristicsElectrical Characteristics T A=25°C unless otherwise notedSymbol ParameterValue Units V RRM Maximum Repetitive Reverse Voltage BAV70BAV747050V V I F(AV)Average Rectified Forward Current 200mA I FSMNon-repetitive Peak Forward Surge CurrentPulse Width = 1.0 secondPulse Width = 1.0 microsecond 1.02.0A A T STG Storage Temperature Range -55 to +150°C T JOperating Junction Temperature150°CSymbol ParameterValue Units P D Power Dissipation350mW R θJAThermal Resistance, Junction to Ambient357°C/WSymbol ParameterTest ConditionsMin.Max.Units V R Breakdown Voltage BAV70BAV74I R = 100µA I R = 5.0µA 7550V V V FForward Voltage BAV70BAV74I F = 1.0mA I F = 10mA I F = 50mA I F = 150mA I F = 100mA7158551.01.251.0mV mV V V V I RReverse Leakage BAV70BAV74V R = 25V, T A = 150°C V R = 70VV R = 70V, T A = 150°C V R = 50VV R = 50V, T A = 150°C 605.010*******µA µA µA nA µA C T Total Capacitance BAV70BAV74V R = 0V, f = 1.0MHz V R = 0V, f = 1.0MHz1.52.0pF pF t rrReverse Recovery Time BAV70BAV74I F = I R = 10mA, I RR = 1.0mA, R L = 100ΩI F = I R = 10mA, I RR = 1.0mA, R L = 100Ω6.04.0ns nsBAV70 / 74Connection Diagram123A4123SOT-23312BAV70 A4 BAV74 JAMARKINGDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®VCX™A CEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™分销商库存信息:FAIRCHILDBAV70BAV74BAV70_D87Z BAV74_D87Z。

74系列各个芯片详细介绍

74系列芯片资料程序匠人发表于 2005-10-29 19:20:00 阅读全文(2477) | 回复(0) | 引用通告(0) | 编辑74系列芯片资料反相器驱动器 LS04 LS05 LS06 LS07 LS125 LS240 LS244 LS245与门与非门 LS00 LS08 LS10 LS11 LS20 LS21 LS27 LS30 LS38或门或非门与或非门 LS02 LS32 LS51 LS64 LS65异或门比较器 LS86译码器 LS138 LS139寄存器 LS74 LS175 LS373反相器:Vcc 6A 6Y 5A 5Y 4A 4Y 六非门 74LS04┌┴─┴─┴─┴─┴─┴─┴┐六非门(OC门) 74LS05_ │14 13 12 11 10 9 8│六非门(OC高压输出) 74LS06Y = A ）││ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1Y 2A 2Y 3A 3Y GND驱动器:Vcc 6A 6Y 5A 5Y 4A 4Y┌┴─┴─┴─┴─┴─┴─┴┐│14 13 12 11 10 9 8│Y = A ）│六驱动器(OC高压输出) 74LS07│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1Y 2A 2Y 3A 3Y GNDVcc -4C 4A 4Y -3C 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐_ │14 13 12 11 10 9 8│Y =A+C ）│四总线三态门 74LS125│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘-1C 1A 1Y -2C 2A 2Y GNDVcc -G B1 B2 B3 B4 B8 B6 B7 B8┌┴─┴─┴─┴─┴─┴─┴─┴─┴─┴┐ 8位总线驱动器 74LS245 │20 19 18 17 16 15 14 13 12 11│）│ DIR=1 A=>B│ 1 2 3 4 5 6 7 8 9 10│ DIR=0 B=>A└┬─┬─┬─┬─┬─┬─┬─┬─┬─┬┘DIR A1 A2 A3 A4 A5 A6 A7 A8 GND页首非门,驱动器与门,与非门或门,或非门异或门,比较器译码器寄存器正逻辑与门,与非门:Vcc 4B 4A 4Y 3B 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐│14 13 12 11 10 9 8│Y = AB ）│ 2输入四正与门 74LS08 │ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1B 1Y 2A 2B 2Y GNDVcc 4B 4A 4Y 3B 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐__ │14 13 12 11 10 9 8│Y = AB ）│ 2输入四正与非门 74LS00 │ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1B 1Y 2A 2B 2Y GNDVcc 1C 1Y 3C 3B 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐___ │14 13 12 11 10 9 8│Y = ABC ）│ 3输入三正与非门 74LS10 │ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1B 2A 2B 2C 2Y GNDVcc H G Y┌┴─┴─┴─┴─┴─┴─┴┐│14 13 12 11 10 9 8│）│ 8输入与非门 74LS30│ 1 2 3 4 5 6 7│ ________└┬─┬─┬─┬─┬─┬─┬┘ Y = ABCDEFGHA B C D E F GND页首非门,驱动器与门,与非门或门,或非门异或门,比较器译码器寄存器正逻辑或门,或非门:Vcc 4B 4A 4Y 3B 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐ 2输入四或门 74LS32│14 13 12 11 10 9 8│）│ Y = A+B│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1B 1Y 2A 2B 2Y GNDVcc 4Y 4B 4A 3Y 3B 3A┌┴─┴─┴─┴─┴─┴─┴┐ 2输入四或非门 74LS02│14 13 12 11 10 9 8│ ___）│ Y = A+B│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1Y 1A 1B 2Y 2A 2B GNDVcc 2Y 2B 2A 2D 2E 1F┌┴─┴─┴─┴─┴─┴─┴┐双与或非门 74S51│14 13 12 11 10 9 8│ _____）│ 2Y = AB+DE│ 1 2 3 4 5 6 7│ _______└┬─┬─┬─┬─┬─┬─┬┘ 1Y = ABC+DEF1Y 1A 1B 1C 1D 1E GNDVcc D C B K J Y┌┴─┴─┴─┴─┴─┴─┴┐ 4-2-3-2与或非门 74S64 74S65(OC门) │14 13 12 11 10 9 8│ ______________）│ Y = ABCD+EF+GHI+JK│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘A E F G H I GND页首非门,驱动器与门,与非门或门,或非门异或门,比较器译码器寄存器2输入四异或门 74LS86Vcc 4B 4A 4Y 3Y 3B 3A┌┴─┴─┴─┴─┴─┴─┴┐│14 13 12 11 10 9 8│）│ _ _│ 1 2 3 4 5 6 7│ Y=AB+AB└┬─┬─┬─┬─┬─┬─┬┘1A 1B 1Y 2Y 2A 2B GND8*2输入比较器 74LS688_Vcc Y B8 A8 B7 A7 B6 A6 B5 A5┌┴─┴─┴─┴─┴─┴─┴─┴─┴─┴┐ 8*2输入比较器 74LS688│20 19 18 17 16 15 14 13 12 11│）││ 1 2 3 4 5 6 7 8 9 10│└┬─┬─┬─┬─┬─┬─┬─┬─┬─┬┘CE A1 B1 A2 B2 A3 B3 A4 B4 GND_Y=A1⊙B1+A2⊙B2+A3⊙B3+A4⊙B4+A5⊙B5+A6⊙B6+A7⊙B7+A8⊙B8页首非门,驱动器与门,与非门或门,或非门异或门,比较器译码器寄存器3-8译码器 74LS138Vcc -Y0 -Y1 -Y2 -Y3 -Y4 -Y5 -Y6 __ _ _ _ __ _ _ __ _ _ __ _ ┌┴─┴─┴─┴─┴─┴─┴─┴┐ Y0=A B C Y1=A B B Y2=A B C Y3=A B C │16 15 14 13 12 11 10 9 │）│ __ _ _ __ _ __ _ __│ 1 2 3 4 5 6 7 8│ Y4=A B C Y5=A B C Y6=A B C Y7=A B C └┬─┬─┬─┬─┬─┬─┬─┬┘A B C -CS0 -CS1 CS2 -Y7 GND双2-4译码器 74LS139Vcc -2G 2A 2B -Y0 -Y1 -Y2 -Y3 __ __ __ __ __ __ __ __┌┴─┴─┴─┴─┴─┴─┴─┴┐ Y0=2A 2B Y1=2A 2B Y2=2A 2B Y3=2A 2B │16 15 14 13 12 11 10 9 │）│ __ __ __ __ __ __ __ __│ 1 2 3 4 5 6 7 8│ Y0=1A 1B Y1=1A 1B Y2=1A 1B Y3=1A 1B └┬─┬─┬─┬─┬─┬─┬─┬┘-1G 1A 1B -Y0 -Y1 -Y2 -Y3 GND8*2输入比较器 74LS688_Vcc Y B8 A8 B7 A7 B6 A6 B5 A5┌┴─┴─┴─┴─┴─┴─┴─┴─┴─┴┐ 8*2输入比较器 74LS688│20 19 18 17 16 15 14 13 12 11│）││ 1 2 3 4 5 6 7 8 9 10│└┬─┬─┬─┬─┬─┬─┬─┬─┬─┬┘CE A1 B1 A2 B2 A3 B3 A4 B4 GND_Y=A1⊙B1+A2⊙B2+A3⊙B3+A4⊙B4+A5⊙B5+A6⊙B6+A7⊙B7+A8⊙B8寄存器:Vcc 2CR 2D 2Ck 2St 2Q -2Q┌┴─┴─┴─┴─┴─┴─┴┐双D触发器 74LS74│14 13 12 11 10 9 8 │）││ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1Cr 1D 1Ck 1St 1Q -1Q GNDVcc 8Q 8D 7D 7Q 6Q 6D 5D 5Q ALE┌┴─┴─┴─┴─┴─┴─┴─┴─┴─┴┐ 8位锁存器 74LS373│20 19 18 17 16 15 14 13 12 11│）││ 1 2 3 4 5 6 7 8 9 10│└┬─┬─┬─┬─┬─┬─┬─┬─┬─┬┘-OE 1Q 1D 2D 2Q 3Q 3D 4D 4Q GND型号器件名称厂牌[数据表]SN7400四2输入端与非门 TI[DATA]SN7401四2输入端与非门(OC) SN7402四2输入端或非门 TI[DATA]SN7403四2输入端与非门(OC)TI[DATA]SN7404六反相器 TI[DATA]SN7405六反相器(OC)TI[DATA]SN7406六高压输出反相器 (OC,30V)TI[DATA]SN7407六高压输出缓冲,驱动器(OC,30V)TI[DATA]SN7408四2输入端与门 TI[DATA]SN7409四2输入端与门(OC)TI[DATA]SN7410三3输入端与非门 TI[DATA]SN7412三3输入端与非门(OC)TI[DATA]SN7413双4输入端与非门 TI[DATA]SN7414六反相器TI[DATA]SN7416六高压输出反相缓冲/驱动器 I[DATA]SN7417六高压输出缓冲/驱动器(OC,15V)TI[DATA]SN7420双4输入端与非门 TI[DATA]SN7422双4输入端与非门(OC)TI[DATA]SN7423可扩展双4输入端或非门 TI[DATA]SN7425双4输入端或非门TI[DATA]SN7426四2输入端高压输出与非缓冲器 [DATA]SN7427三3输入端或非门TI[DATA]SN7428四2输入端或非缓冲器 I[DATA]SN74308输入端与非门TI[DATA]SN7432四2输入端或门。

BAV70-V中文资料

BAV70-VDocument Number 85546 Rev. 1.7, 09-Mar-06Vishay Semiconductors1Small Signal Switching Diode, DualFeatures•Silicon Epitaxial Planar Diode•Fast switching dual diode with commoncathode•This diode is also available in other con-figurations including:a dual common anode tocathode with type designation BAV99-V, a dualcommon anode with type designation BAW56-V,and a single diode with type designation BAL99-V. •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002-96/ECMechanical Data Case: SOT23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options:GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/boxParts TableAbsolute Maximum Ratings T amb = 25°C, unless otherwise specified 1) Device on fiberglass substrate, see layoutPart Ordering code Marking Remarks BAV70-V BAV70-V-GS18 or BAV70-V-GS08JJ T ape and ReelParameter T est condition Symbol Value Unit Reverse voltage, peak reversevoltageV R, V RM70V Forward current (continuous)I F250mA Non repetitive peak forwardcurrentt p = 1 µs I FSM2At p = 1 ms I FSM1At p = 1 s I FSM0.5A Power dissipation P tot3501)mW 2Document Number 85546Rev. 1.7, 09-Mar-06BAV70-VVishay Semiconductors Thermal CharacteristicsT amb = 25°C, unless otherwise specified1)Device on Fiberglass substrate, see layout on second page.Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedTypical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterT est condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 4301)°C/W Junction temperature T j 150°C Storage temperature rangeT j = T stg- 65 to + 150°CParameterTest conditionSymbol MinTyp.Max Unit Forward voltageI F = 1 mA V F 715mV I F = 10 mA V F 855mV I F = 50 mA V F 1V I F = 150 mAV F 1.25VReverse currentV R = 70 VI R 2.5µA V R = 70 V , T j = 150°C I R 50µA V R = 25 V , T j = 150°CI R 30µA Diode capacitance V R = 0, f = 1 MHz C D 1.5pF Reverse recovery timeI F = 10 mA to I R = 1 mA, V R = 6 V , R L = 100 Ωt rr6nsFigure 1. Forward Current vs. Forward VoltageV F -For w ard V oltage (V )14356Figure 2. Peak forward current I FM = f (t p )BAV70-VDocument Number 85546Rev. 1.7, 09-Mar-06Vishay Semiconductors3Package Dimensions in mm (Inches) 4Document Number 85546 Rev. 1.7, 09-Mar-06BAV70-VVishay SemiconductorsOzone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the L ondon Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。

BAV74_04资料

output signal
Fig.8 Forward recovery voltage test circuit and waveforms.
2004 Jan 14
6
元器件交易网
Philips Semiconductors
Product speciﬁcation
High-speed double diode
Top view
umns
BAV74
PINNING PIN 1 2 3 anode (a1) anode (a2) cathode DESCRIPTION
2
1
2 3 3
MAM108
1
MARKING TYPE NUMBER BAV74 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W: Made in China. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. 2004 Jan 14 2 total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 250 +150 150 A A A mW °C °C single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 − − − − − 60 50 215 125 450 V V mA mA mA PARAMETER CONDITIONS MIN. MAX. UNIT MARKING CODE(1) JA* Fig.1 Simplified outline (SOT23) and symbol.

BAV74LT1G;BAV74LT1;BAV74LT3G;中文规格书,Datasheet资料

© Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 51Publication Order Number:BAV74LT1/DBAV74LT1GMonolithic DualSwitching DiodeFeatures•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGS (EACH DIODE)Rating Symbol Value Unit Reverse Voltage V R50Vdc Forward Current I F200mAdc Peak Forward Surge Current I FM(surge)500mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board (Note 1), T A = 25°CDerate above 25°C PD2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R q JA556°C/WTotal Device Dissipation Alumina Substrate, (Note 2) T A = 25°C Derate above 25°C P D3002.4mWmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/W Junction and Storage Temperature T J, T stg−55 to +150°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in 99.5% alumina.SOT−23CASE 318STYLE 9MARKING DIAGRAMDevice Package Shipping†ORDERING INFORMATIONBAV74LT1G SOT−23(Pb−Free)3000/Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.312BAV74LT3G SOT−23(Pb−Free)10,000/T ape & Reel1JA M GGJA= Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation and/or overbar may vary depending upon manufacturing location.2ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 5.0 m Adc)V (BR)50−Vdc Reverse Voltage Leakage Current, (Note 3)(V R = 50 Vdc, T J = 125°C)(V R = 50 Vdc)I R−−1000.1m AdcDiode Capacitance(V R = 0, f = 1.0 MHz)C D − 2.0pF Forward Voltage (I F = 100 mAdc)V F − 1.0Vdc Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, measured at I R = 1.0 mA, R L = 100 W )t rr−4.0ns3.For each individual diode while the second diode is unbiased.100V F , FORWARD VOLTAGE (VOLTS)101.00.110V R , REVERSE VOLTAGE (VOLTS)1.00.10.010.0011.00V R , REVERSE VOLTAGE (VOLTS)0.90.80.70.6C D , D I O D E C A P A C I T A N C E (p F )2468I F , F O R W A R D C U R R E N T (m A )Figure 1. Forward Voltage Figure 2. Leakage CurrentFigure 3. CapacitanceI R , R E V E R S E C U R R E N T (μA )Curves Applicable to Each AnodePACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE ANNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEADTHICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.SOLDERING FOOTPRINT*VIEW CDIM A MIN NOM MAX MIN MILLIMETERS0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1STYLE 9:PIN 1.ANODE2.ANODE3.CATHODE2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.029*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIBAV74LT1G BAV74LT1BAV74LT3G。

常用74系列标准数字电路的中文名称资料

常用74系列标准数字电路的中文名称资料收藏常用74系列标准数字电路的中文名称资料器件代号器件名称74 74LS 74HC00 四2输入端与非门√√√01 四2输入端与非门(OC) √√02 四2输入端或非门√√√03 四2输入端与非门(OC) √√04 六反相器√√√05 六反相器(OC) √√06 六高压输出反相器(OC,30V) √√07 六高压输出缓冲,驱动器(OC,30V) √√√08 四2输入端与门√√√09 四2输入端与门(OC) √√√10 三3输入端与非门√√√11 三3输入端与门√√12 三3输入端与非门(OC) √√√13 双4输入端与非门√√√14 六反相器√√√15 三3输入端与门(OC) √√16 六高压输出反相器(OC,15V) √17 六高压输出缓冲,驱动器(OC,15V) √20 双4输入端与非门√√√21 双4输入端与门√√√22 双4输入端与非门(OC) √√25 双4输入端或非门(有选通端) √√√26 四2输入端高压输出与非缓冲器√√√27 三3输入端或非门√√√28 四2输入端或非缓冲器√√√器件代号器件名称74 74LS 74HC30 8输入端与非门√√√32 四2输入端或门√√√33 四2输入端或非缓冲器(OC) √√37 四2输入端与非缓冲器√√38 四2输入端与非缓冲器(OC) √√40 双4输入端与非缓冲器√√√42 4线-10线译码器(BCD输入) √√43 4线-10线译码器(余3码输入) √44 4线-10线译码器(余3葛莱码输入) √48 4线-7段译码器√49 4线-7段译码器√50 双2路2-2输入与或非门√√√51 2路3-3输入,2路2-2输入与或非门√√√52 4路2-3-2-2输入与或门√53 4路2-2-2-2输入与或非门√54 4路2-3-3-2输入与或非门√√55 2路4-4输入与或非门√60 双4输入与扩展器√√61 三3输入与扩展器√62 4路2-3-3-2输入与或扩展器√64 4路4-2-3-2输入与或非门√65 4路4-2-3-2输入与或非门(OC) √70 与门输入J-K触发器√71 与或门输入J-K触发器√72 与门输入J-K触发器√器件代号器件名称74 74LS 74HC74 双上升沿D型触发器√√78 双D型触发器√√85 四位数值比较器√86 四2输入端异或门√√√87 4位二进制原码/反码√95 4位移位寄存器√101 与或门输入J-K触发器√102 与门输入J-K触发器√107 双主-从J-K触发器√108 双主-从J-K触发器√74F74是高速的TTL芯片和74HC一样就是速度高109 双主-从J-K触发器√110 与门输入J-K触发器√111 双主-从J-K触发器√√112 双下降沿J-K触发器√113 双下降沿J-K触发器√114 双下降沿J-K触发器√116 双4位锁存器√120 双脉冲同步驱动器√121 单稳态触发器√√√122 可重触发单稳态触发器√√√123 可重触发双稳态触发器√√√125 四总线缓冲器√√√126 四总线缓冲器√√√128 四2输入端或非线驱动器√√√132 四2输入端与非门√√√d触发器芯片有:74HC74 74LS90 双D触发器74LS7474LS364八D触发器（三态）7474、74 H74、74F74、74ALS74、74L74、74LS74A、74S74、74HC73、74C74双D型正沿触发器（带预置和清除端）74174、74LS174、74F174、74ALS174、74S174、74HC174、74C174六D型触发器（带清除端）74175、74LS175、74F175、74ALS175、74S175、74HC175、74C175 四D型触发器（带清除端）74273、74LS273、74S273、74F273、74ALS273、74HC273 八D型触发器（带清除端）74LS364八D触发器（三态）74LS377、74F377、74S3777八D 触发器74LS378、74F378、74S378、74HC378六D 触发器74LS379、74F379、74S379、74HC379八D 触发器。

74系列功能大全(中文)

74HC155 2-4 LINE DECODER 2线至4线译码器
74HC157 QUAD 2-INPUT MUX 四个双端多路器
ቤተ መጻሕፍቲ ባይዱ74HC161 BINARY COUNTER 二进制计数器
74HC163 DECADE COUNTERS 十进制计数器
74HC164 SERIAL-PARALLEL SHIFT REG 串入并出
7404 HEX INVERTING GATES 反向器
7406 HEX INVERTING GATES HV 高输出反向器
7408 QUAD 2-INPUT AND GATE 与门
7409 QUAD 2-INPUT AND GATES OC 与门
7410 TRIPLE 3-INPUT NAND GATES 与非门
7420 DUAL 4-INPUT NAND GATES 双四输入与非门
7426 QUAD 2-INPUT NAND GATES 与非门
7427 TRIPLE 3-INPUT NOR GATES 三输入或非门
7430 8-INPUT NAND GATES 八输入端与非门
7432 QUAD 2-INPUT OR GATES 二输入或门
7485 4-BIT MAGNITUDE COMPARATOR 四位比较器
7486 2-INPUT EXCLUSIVE OR GATES 双端异或门
74HC00 QUAD 2-INPUT NAND GATES 双输入与非门
74HC02 QUAD 2-INPUT NOR GATES 双输入或非门
74HC195 4BIT PARALLEL SHIFT 4位并行移位寄存器
74HC20 QUAD 4-INPUT NAND GATE 四个四入与非门

电子行业74系列芯片中文资料超级全

电子行业74系列芯片中文资料超级全CD4506双二组2输入可扩展或非门CD4508双4位锁存D型触发器CD4510可预置BCD码加/减计数器CD4511BCD锁存,7段译码,驱动器CD4512八路数据选择器CD4513BCD锁存,7段译码,驱动器(消隐)CD45144位锁存,4线-16线译码器CD45154位锁存,4线-16线译码器CD4516可预置4位二进制加/减计数器CD4517双64位静态移位寄存器CD4518双BCD同步加计数器CD4519四位与或选择器CD4520双4位二进制同步加计数器CD452124级分频器CD4522可预置BCD同步1/N计数器CD4526可预置4位二进制同步1/N计数器CD4527BCD比例乘法器CD4528双单稳态触发器CD4529双四路/单八路模拟开关CD4530双5输入端优势逻辑门CD453112位奇偶校验器CD45328位优先编码器CD4536可编程定时器CD4538精密双单稳CD4539双四路数据选择器CD4541可编程序振荡/计时器CD4543BCD七段锁存译码,驱动器CD4544BCD七段锁存译码,驱动器CD4547BCD七段译码/大电流驱动器CD4549函数近似寄存器CD4551四2通道模拟开关CD4553三位BCD计数器CD4555双二进制四选一译码器/分离器CD4556双二进制四选一译码器/分离器CD4558BCD八段译码器CD4560"N"BCD加法器CD4561"9"求补器CD4573四可编程运算放大器CD4574四可编程电压比较器CD4575双可编程运放/比较器CD4583双施密特触发器CD4584六施密特触发器CD45854位数值比较器CD45998位可寻址锁存器。

74系列各个芯片详细介绍

74系列芯片资料程序匠人发表于 2005-10-29 19:20:00 阅读全文(2477) | 回复(0) | 引用通告(0) | 编辑74系列芯片资料反相器驱动器 LS04 LS05 LS06 LS07 LS125 LS240 LS244 LS245与门与非门 LS00 LS08 LS10 LS11 LS20 LS21 LS27 LS30 LS38或门或非门与或非门 LS02 LS32 LS51 LS64 LS65异或门比较器 LS86译码器 LS138 LS139寄存器 LS74 LS175 LS373反相器:Vcc 6A 6Y 5A 5Y 4A 4Y 六非门74LS04 ┌┴─┴─┴─┴─┴─┴─┴┐六非门(OC门) 74LS05_ │1413 12 11 10 9 8│六非门(OC高压输出) 74LS06Y = A ）││ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1Y 2A 2Y 3A 3Y GND驱动器:Vcc 6A 6Y 5A 5Y 4A 4Y┌┴─┴─┴─┴─┴─┴─┴┐│1413 12 11 10 9 8│Y = A ）│六驱动器(OC高压输出) 7 4LS07│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1Y 2A 2Y 3A 3Y GNDVcc -4C 4A 4Y -3C 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐_ │1413 12 11 10 9 8│Y =A+C ）│四总线三态门 74LS125 │ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘-1C 1A 1Y -2C 2A 2Y GNDVcc -G B1 B2 B3 B4 B8 B6 B7 B8┌┴─┴─┴─┴─┴─┴─┴─┴─┴─┴┐8位总线驱动器 74LS245│2019 18 17 16 15 14 13 12 11│）│DIR =1 A=>B│ 1 2 3 4 5 6 7 8 9 10│DIR=0 B=>A└┬─┬─┬─┬─┬─┬─┬─┬─┬─┬┘DIR A1 A2 A3 A4 A5 A6 A7 A8 GND页首非门,驱动器与门,与非门或门,或非门异或门,比较器译码器寄存器正逻辑与门,与非门:Vcc 4B 4A 4Y 3B 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐│1413 12 11 10 9 8│Y = AB ）│2输入四正与门 74LS08 │ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1B 1Y 2A 2B 2Y GNDVcc 4B 4A 4Y 3B 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐__ │1413 12 11 10 9 8│Y = AB ）│2输入四正与非门 74LS 00│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1B 1Y 2A 2B 2Y GNDVcc 1C 1Y 3C 3B 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐___ │1413 12 11 10 9 8│Y = ABC ）│3输入三正与非门 74LS 10│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1B 2A 2B 2C 2Y GNDVcc H G Y┌┴─┴─┴─┴─┴─┴─┴┐│1413 12 11 10 9 8│）│8输入与非门 74LS30│ 1 2 3 4 5 6 7│________└┬─┬─┬─┬─┬─┬─┬┘Y = ABCDEFGHA B C D E F GND页首非门,驱动器与门,与非门或门,或非门异或门,比较器译码器寄存器正逻辑或门,或非门:Vcc 4B 4A 4Y 3B 3A 3Y┌┴─┴─┴─┴─┴─┴─┴┐2输入四或门 74LS32│1413 12 11 10 9 8│）│Y = A+B│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1A 1B 1Y 2A 2B 2Y GNDVcc 4Y 4B 4A 3Y 3B 3A┌┴─┴─┴─┴─┴─┴─┴┐2输入四或非门 74LS02│1413 12 11 10 9 8│ ___）│ Y = A+B│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1Y 1A 1B 2Y 2A 2B GNDVcc 2Y 2B 2A 2D 2E 1F┌┴─┴─┴─┴─┴─┴─┴┐双与或非门 74S51│1413 12 11 10 9 8│ _____）│2Y = AB+DE│ 1 2 3 4 5 6 7│ _______└┬─┬─┬─┬─┬─┬─┬┘1Y = ABC+DEF1Y 1A 1B 1C 1D 1E GNDVcc D C B K J Y┌┴─┴─┴─┴─┴─┴─┴┐4-2-3-2与或非门 74S64 74S65(OC门)│1413 12 11 10 9 8│______________）│Y = ABCD+EF+GHI+JK│ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘A E F G H I GND页首非门,驱动器与门,与非门或门,或非门异或门,比较器译码器寄存器2输入四异或门 74LS86Vcc 4B 4A 4Y 3Y 3B 3A┌┴─┴─┴─┴─┴─┴─┴┐│1413 12 11 10 9 8│）│_ _│ 1 2 3 4 5 6 7│Y=AB+AB└┬─┬─┬─┬─┬─┬─┬┘1A 1B 1Y 2Y 2A 2B GND8*2输入比较器 74LS688_Vcc Y B8 A8 B7 A7 B6 A6 B5 A5┌┴─┴─┴─┴─┴─┴─┴─┴─┴─┴┐8*2输入比较器 74LS688│2019 18 17 16 15 14 13 12 11│）││ 1 2 3 4 5 6 7 8 9 10│└┬─┬─┬─┬─┬─┬─┬─┬─┬─┬┘CE A1 B1 A2 B2 A3 B3 A4 B4 GND_Y=A1⊙B1+A2⊙B2+A3⊙B3+A4⊙B4+A5⊙B5+A6⊙B6+A7⊙B7+A8⊙B8页首非门,驱动器与门,与非门或门,或非门异或门,比较器译码器寄存器3-8译码器 74LS138Vcc -Y0 -Y1 -Y2 -Y3 -Y4 -Y5 -Y6 __ _ _ _ __ _ _ __ _ _ __ _ ┌┴─┴─┴─┴─┴─┴─┴─┴┐Y0=A B C Y1=A B B Y2=A B C Y3=A B C│1615 14 13 12 11 10 9 │）│__ _ _ ___ __ _ __│ 1 2 3 4 5 6 7 8│Y4=A B C Y5=A B C Y6=A B C Y 7=A B C└┬─┬─┬─┬─┬─┬─┬─┬┘A B C -CS0 -CS1 CS2 -Y7 GND双2-4译码器 74LS139Vcc -2G 2A 2B -Y0 -Y1 -Y2 -Y3 __ __ __ __ __ __ __ __┌┴─┴─┴─┴─┴─┴─┴─┴┐Y0=2A 2B Y1=2A 2B Y2=2A 2B Y3=2A 2B│1615 14 13 12 11 10 9 │）│__ __ __ __ __ __ __ __│ 1 2 3 4 5 6 7 8│Y0=1A 1B Y1=1A 1B Y2=1A 1B Y 3=1A 1B└┬─┬─┬─┬─┬─┬─┬─┬┘-1G 1A 1B -Y0 -Y1 -Y2 -Y3 GND8*2输入比较器 74LS688_Vcc Y B8 A8 B7 A7 B6 A6 B5 A5┌┴─┴─┴─┴─┴─┴─┴─┴─┴─┴┐8*2输入比较器 74LS688│2019 18 17 16 15 14 13 12 11│）││ 1 2 3 4 5 6 7 8 9 10│└┬─┬─┬─┬─┬─┬─┬─┬─┬─┬┘CE A1 B1 A2 B2 A3 B3 A4 B4 GND_Y=A1⊙B1+A2⊙B2+A3⊙B3+A4⊙B4+A5⊙B5+A6⊙B6+A7⊙B7+A8⊙B8寄存器:Vcc 2CR 2D 2Ck 2St 2Q -2Q┌┴─┴─┴─┴─┴─┴─┴┐双D触发器 74LS74│1413 12 11 10 9 8 │）││ 1 2 3 4 5 6 7│└┬─┬─┬─┬─┬─┬─┬┘1Cr 1D 1Ck 1St 1Q -1Q GNDVcc 8Q 8D 7D 7Q 6Q 6D 5D 5Q ALE┌┴─┴─┴─┴─┴─┴─┴─┴─┴─┴┐8位锁存器 74LS373│2019 18 17 16 15 14 13 12 11│）││ 1 2 3 4 5 6 7 8 9 10│└┬─┬─┬─┬─┬─┬─┬─┬─┬─┬┘-OE 1Q 1D 2D 2Q 3Q 3D 4D 4Q GND型号器件名称厂牌[数据表]SN7400四2输入端与非门 TI[DATA]SN7401四2输入端与非门(OC) SN7402四2输入端或非门 TI[DATA]SN7403四2输入端与非门(OC)TI[DATA]SN7404六反相器 TI[DATA]SN7405六反相器(O C)TI[DATA]SN7406六高压输出反相器(OC,30V)TI[DATA]SN7407六高压输出缓冲,驱动器(OC,30V)TI[DATA]SN7408四2输入端与门TI[DATA]SN7409四2输入端与门(OC)TI[DATA]SN7410三3输入端与非门 TI[DATA]SN7412三3输入端与非门(OC)TI[DATA]SN7413双4输入端与非门TI[DATA]SN7414六反相器TI[DATA]SN7416六高压输出反相缓冲/驱动器 I[DATA]SN7417六高压输出缓冲/驱动器(OC,15V)TI[DATA]SN7420双4输入端与非门 TI[DATA]SN7422双4输入端与非门(OC)TI[DATA]SN7423可扩展双4输入端或非门 TI[DATA]SN7425双4输入端或非门TI[DATA]SN7426四2输入端高压输出与非缓冲器 [DATA]SN7427三3输入端或非门TI[DATA]SN7428四2输入端或非缓冲器 I[DATA]SN74308输入端与非门TI[DATA]SN7432四2输入端或门。

74系列芯片功能略表

电子元件知识-74系列芯片功能略表
74HC01 2输入四与非门 (oc)
74HC02 2输入四或非门
74HC03 2输入四与非门 (oc)
74HC04 六倒相器
74HC05 六倒相器(oc)
74HC06 六高压输出反相缓冲器/驱动器(oc,30v)
74HC07 六高压输出缓冲器/驱动器(oc,30v)
74HC150 16选1数据选择器(反补输出)
74HC151 8选1数据选择器(互补输出)
74HC152 8选1数据选择器多路开关
74HC153 双4选1数据选择器/多路选择器
74HC154 4线-16线译码器
74HC155 双2-4译码器/分配器(图腾柱输出)
74HC156 双2-4译码器/分配器(集电极开路输出)
“74”指的是商用器件，“54”是军用的，它们的适用温度范围不同，军用的范围大。商用：0℃ ～ 70℃；军用：-55℃～125℃。
LS等是子系列的名称。
L:低功耗
H:高速
S:肖特基
LS:低功耗消特基
ALS:先进低功耗肖特基
AS:先进肖特基
LS：低功耗消特基
至于商家ID，是在“74LS”之前，比如“SN74LS”的“SN”表明生产者为德州仪器公司。
74HC49 bcd-七段译码器/驱动器(oc)
74HC50 双二路2-2输入与或非门(一门可扩展)
74HC51 双二路2-2输入与或非门
74HC51 二路3-3输入,二路2-2输入与或非门
74HC52 四路2-3-2-2输入与或门(可扩展)
74HC53 四路2-2-2-2输入与或非门(可扩展)

BAV74

FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance
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1 3
2
Marking: JA
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range

BAV74L中文资料

The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
DEVICE MARKING
BAV74LT1 = JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 5.0 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc, TJ = 125°C) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 Ω) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR — — CD VF trr — — — 100 0.1 2.0 1.0 4.0 pF Vdc ns 50 — Vdc µAdc

BAV99中文资料_数据手册_参数

1
10−1 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (V)
(1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C
Fig 1. Forward current as a function of forward voltage; typical values
IFRM
repetitive peak forward
-
current
IFSM
non-repetitive peak
forward current
Ptot Per device
total power dissipation BAV99 BAV99S BAV99W
square wave tp = 1 μs tp = 1 ms tp = 1 s
Max Unit
715 mV
855 mV
1
V
1.25 V
30 nA
0.5 μA
30 μA
50 μA
1.5 pF
4
ns
1.75 V
BAV99_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes

BYV74中文资料

Dual rectifier diodes BYV74 seriesultrafastGENERAL DESCRIPTIONQUICK REFERENCE DATAGlass passivated,high efficiency SYMBOL PARAMETERMAX.MAX.MAX.UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop,BYV74-300400500ultra fast reverse recovery times and V RRM Repetitive peak reverse 300400500V soft recovery characteristic.They are voltageintended for use in switched mode V F Forward voltage1.12 1.12 1.12V power supplies and high frequency I O(AV)Average output current 303030A circuits in general,where both low (both diodes conducting)conduction losses and low switching t rrReverse recovery time606060nslosses are essential.PINNING - SOT93PIN CONFIGURATIONSYMBOLLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT -300-400-500V RRM Repetitive peak reverse voltage -300400500V V RWM Crest working reverse voltage -300400500V V R Continuous reverse voltage T mb ≤ 136˚C -300400500V I O(AV)Average output current (both square wave; δ = 0.5;-30A diodes conducting)1T mb ≤ 94 ˚Csinusoidal; a = 1.57;-27A T mb ≤ 98 ˚CI O(RMS)RMS output current (both -43A diodes conducting)I FRM Repetitive peak forward current t = 25 µs; δ = 0.5;-30A per diodeT mb ≤ 94 ˚C I FSMNon-repetitive peak forward t = 10 ms -150A current per diode.t = 8.3 ms-160A sinusoidal; with reapplied V RRM(max)I 2t I 2t for fusingt = 10 ms-112A 2s T stg Storage temperature-40150˚C T jOperating junction temperature-150˚C1 Neglecting switching and reverse current losses.For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITRth j-hs Thermal resistance junction to per diode-- 2.4K/W heatsink both diodes conducting-- 1.4K/WRth j-a Thermal resistance junction to in free air.-45-K/W ambientSTATIC CHARACTERISTICSTj= 25 ˚C unless otherwise statedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITVF Forward voltage (per diode)IF= 15 A; Tj= 150˚C-0.95 1.12VIF= 15 A- 1.08 1.25VIF= 30 A- 1.15 1.36VI R Reverse current (per diode)VR= VRRM-1050µAVR= VRRM; Tj= 100 ˚C-0.30.8mADYNAMIC CHARACTERISTICSTj= 25 ˚C unless otherwise statedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITQs Reverse recovery charge (per IF= 2 A to VR≥ 30 V;-4060nC diode)dIF/dt = 20 A/µst rr Reverse recovery time (per IF= 1 A to VR≥ 30 V;-5060ns diode)dIF/dt = 100 A/µsI rrm Peak reverse recovery current IF= 10 A to VR≥ 30 V;- 4.2 5.2A (per diode)dIF/dt = 50 A/µs; Tj= 100˚CVfr Forward recovery voltage (per IF= 10 A; dIF/dt = 10 A/µs- 2.5-V diode)MECHANICAL DATANotes1. Refer to mounting instructions for SOT93 envelope.2. Epoxy meets UL94 V0 at 1/8".DEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1996All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。