587B062LPE中文资料

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AD587中文资料

FUNCTIONAL BLOCK DIAGRAM+V IN NOISE REDUCTIONOUTNOTE:PINS 1,3, AND 7 ARE INTERNAL TEST POINTS.NO CONNECTIONS TO THESE POINTS.REV.DInformation furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.aHigh Precision 10 V ReferenceAD587FEATURESLaser Trimmed to High Accuracy:10.000 V ؎5 mV (L and U Grades)Trimmed Temperature Coefficient:5 ppm/؇C max, (L and U Grades)Noise Reduction CapabilityLow Quiescent Current: 4 mA max Output Trim CapabilityMIL-STD-883 Compliant Versions AvailablePRODUCT HIGHLIGHTSser trimming of both initial accuracy and temperature coefficients results in very low errors over temperature with-out the use of external components. The AD587L has amaximum deviation from 10.000 V of ±8.5 mV between 0°C and +70°C, and the AD587U guarantees ±14 mV maximum total error between –55°C and +125°C.2.For applications requiring higher precision, an optional fine trim connection is provided.3.Any system using an industry standard pinout 10 volt refer-ence can be upgraded instantly with the AD587.4.Output noise of the AD587 is very low, typically 4 µV p-p. A noise reduction pin is provided for additional noise filtering using an external capacitor.5.The AD587 is available in versions compliant with MIL-STD-883. Refer to the Analog Devices Military Products Databook or current AD587/883B data sheet for detailed specifications.PRODUCT DESCRIPTION The AD587 represents a major advance in the state-of-the-art in monolithic voltage references. Using a proprietary ion-implanted buried Zener diode and laser wafer trimming of high stability thin-film resistors, the AD587 provides outstanding perfor-mance at low cost.The AD587 offers much higher performance than most other 10 V references. Because the AD587 uses an industry standard pinout, many systems can be upgraded instantly with the AD587. The buried Zener approach to reference design pro-vides lower noise and drift than bandgap voltage references. The AD587 offers a noise reduction pin which can be used to further reduce the noise level generated by the buried Zener.The AD587 is recommended for use as a reference for 8-, 10-,12-, 14- or 16-bit D/A converters which require an external precision reference. The device is also ideal for successiveapproximation or integrating A/D converters with up to 14 bits of accuracy and, in general, can offer better performance than the standard on-chip references.The AD587J, K and L are specified for operation from 0°C to +70°C, and the AD587S, T and U are specified for –55°C to +125°C operation. All grades are available in 8-pin cerdip. The J and K versions are also available in an 8-pin Small Outline IC (SOIC) package for surface mount applications, while the J, K,and L grades also come in an 8-pin plastic package.One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781/329-4700World Wide Web Site: Fax: 781/326-8703© Analog Devices, Inc., 2000AD587–SPECIFICATIONS(T A = +25؇C, V IN = +15 V unless otherwise noted)Model AD587J/S AD587K/T AD587L/UMin Typ Max Min Typ Max Min Typ Max Units OUTPUT VOLTAGE9.99010.0109.99510.0059.99510.005VOUTPUT VOLTAGE DRIFT10°C to +70°C20105ppm/°C –55°C to +125°C20105GAIN ADJUSTMENT+3+3+3%–1–1–1LINE REGULATION113.5 V ≤ + V IN≤ 36 VT MIN to T MAX100100100±µV/VLOAD REGULATION1Sourcing 0 < I OUT < 10 mAT MIN to T MAX100100100±µV/mA Sourcing –10 < I OUT < 0 mA2T MIN to T MAX100100100QUIESCENT CURRENT242424mAPOWER DISSIPATION303030mWOUTPUT NOISE0.1 Hz to 10 Hz444µV p-pSpectral Density, 100 Hz100100100nV/√HzLONG-TERM STABILITY151515±ppm/1000 Hr. SHORT-CIRCUIT CURRENT-TO-GROUND307030703070mASHORT-CIRCUIT CURRENT-TO-V IN307030703070mA TEMPERATURE RANGESpecified Performance (J, K, L)0+700+700+70°COperating Performance (J, K, L)3–40+85–40+85–40+85Specified Performance (S, T, U)–55+125–55+125–55+125Operating Performance (S, T, U)3–55+125–55+125–55+125NOTES1Spec is guaranteed for all packages and grades. Cerdip packaged parts are 100% production test.2Load Regulation (Sinking) specification for SOIC (R) package is ±200 µV/mA.3The operating temperature ranged is defined as the temperatures extremes at which the device will still function. Parts may deviate from their specified performance outside their specified temperature range.Specifications subject to change without notice.ORDERING GUIDEInitial Temperature Temperature PackageModel1Error Coefficient Range Options2AD587JQ10 mV20 ppm/°C0°C to +70°C Q-8AD587JR10 mV20 ppm/°C0°C to +70°C SO-8AD587JN10 mV20 ppm/°C0°C to +70°C N-8AD587KQ 5 mV10 ppm/°C0°C to +70°C Q-8AD587KR 5 mV10 ppm/°C0°C to +70°C SO-8AD587KN 5 mV10 ppm/°C0°C to +70°C N-8AD587LQ 5 mV 5 ppm/°C0°C to +70°C Q-8AD587LN 5 mV 5 ppm/°C0°C to +70°C N-8AD587SQ10 mV20 ppm/°C–55°C to +125°C Q-8AD587TQ10 mV10 ppm/°C–55°C to +125°C Q-8AD587UQ 5 mV 5 ppm/°C–55°C to +125°C Q-8AD587JCHIPS10 mV20 ppm/°C0°C to +70°CNOTES1For details on grade and package offerings screened in accordance with MIL-STD-883, refer to theAnalog Devices Military Products Databook or current AD587/883B data sheet.2N = Plastic DIP; Q = Cerdip; SO = SOIC.–2–REV. DAD587REV. D –3–ABSOLUTE MAXIMUM RATINGS*V IN to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 V Power Dissipation (+25°C) . . . . . . . . . . . . . . . . . . . . .500 mW Storage Temperature . . . . . . . . . . . . . . . . . . .–65°C to +150°C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . .+300°C Package Thermal ResistanceθJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22°C/W θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .110°C/W Output Protection: Output safe for indefinite short to ground and momentary short to V IN .*Stresses above those listed under Absolute Maximum Ratings may cause perma-nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.DIE SPECIFICATIONSThe following specifications are tested at the die level for AD587JCHIPS. These die are probed at +25°C only.(T A = +25°C, V IN = +15 V unless otherwise noted)AD587JCHIPS Parameter Min Typ Max UnitsOutput Voltage 9.99010.010V Gain Adjustment –13%Line Regulation13.5 V < + V IN < 36 V 100±µV/V Load RegulationSourcing 0 < I OUT < 10 mA 100µV/mA Sinking –10 < I OUT < 0 mA 100µV/mA Quiescent Current24mA Short-Circuit Current-to-Ground 70mA Short-Circuit Currrent-to-V OUT70mANOTES 1Both VOUT pads should be connected to the output.2Sense and force grounds must be tied together.Die Thickness: The standard thickness of Analog Devices Bipolar dice is 24 mils ± 2 mils.Die Dimensions: The dimensions given have a tolerance of ±2 mils.Backing : The standard backside surface is silicon (not plated). Analog Devices does not recommend gold-backed dice for most applications.Edges: A diamond saw is used to separate wafers into dice thus providing perpendicular edges half-way through the die.In contrast to scribed dice, this technique provides a more uniform die shape and size . The perpen-dicular edges facilitate handling (such as tweezer pick-up) while the uniform shape and size simplifies substrate design and die attach.Top Surface:The standard top surface of the die is covered by a layer of glassivation . All areas are covered except bonding pads and scribe lines.Surface Metalization: The metalization to Analog Devices bipolar dice is aluminum. Minimum thickness is 10,000Å.Bonding Pads: All bonding pads have a minimum size of 4 mils by 4 mils. The passivation windows have 3.5 mils by 3.5 mils minimum.DIE LAYOUTPIN CONFIGURATIONTP *TRIMV OUTTP *NOISEREDUCTION+V IN TP *GND *TP DENOTES FACTORY TEST POINT. NO CONNECTIONS SHOULD BE MADE TO THESE PINS.Die Size: 0.081 × 0.060 InchesAD587REV. D–4–THEORY OF OPERATIONThe AD587 consists of a proprietary buried Zener diode refer-ence, an amplifier to buffer the output and several high stability thin-film resistors as shown in the block diagram in Figure 1.This design results in a high precision monolithic 10 V output reference with initial offset of 5 mV or less. The temperature compensation circuitry provides the device with a temperature coefficient of under 5 ppm/°C.+V IN NOISE REDUCTIONOUTNOTE:PINS 1,3, AND 7 ARE INTERNAL TEST POINTS.NO CONNECTIONS TO THESE POINTS.Figure 1.AD587 Functional Block DiagramA capacitor can be added at the NOISE REDUCTION pin (Pin 8) to form a low-pass filter with R S to reduce the noise contribu-tion of the Zener to the circuit.APPLYING THE AD587The AD587 is simple to use in virtually all precision reference applications. When power is applied to Pin 2, and Pin 4 is grounded, Pin 6 provides a 10 V output. No external compo-nents are required; the degree of desired absolute accuracy is achieved simply by selecting the required device grade. The AD587 requires less than 4 mA quiescent current from an oper-ating supply of +15 V.Fine trimming may be desired to set the output level to exactly 10.000 V (calibrated to a main system reference). System cali-bration may also require a reference voltage that is slightly differ-ent from 10.000 V, for example, 10.24 V for binary applications.In either case, the optional trim circuit shown in Figure 2 can offset the output by as much as 300 mV, if desired, with mini-mal effect on other device characteristics.C Figure 2.Optional Fine Trim ConfigurationNOISE PERFORMANCE AND REDUCTIONThe noise generated by the AD587 is typically less than 4 µV p-p over the 0.1 Hz to 10 Hz band. Noise in a 1 MHz band-width is approximately 200 µV p-p. The dominant source of this noise is the buried Zener which contributes approximately 100 nV/√Hz . In comparison, the op amp’s contribution is negli-gible. Figure 3 shows the 0.1 Hz to 10 Hz noise of a typical AD587. The noise measurement is made with a bandpass filter made of a 1-pole high-pass filter with a corner frequency at 0.1 Hz and a 2-pole low-pass filter with a corner frequency at 12.6 Hz to create a filter with a 9.922 Hz bandwidth.Figure 3.0.1 Hz to 10 Hz NoiseIf further noise reduction is desired, an external capacitor may be added between the NOISE REDUCTION pin and ground as shown in Figure 2. This capacitor, combined with the 4 k Ω R S and the Zener resistances, form a low-pass filter on the output of the Zener cell. A 1 µF capacitor will have a 3 dB point at 40 Hz, and it will reduce the high frequency (to 1 MHz) noise to about 160 µV p-p. Figure 4 shows the 1 MHz noise of a typi-cal AD587 both with and without a 1 µF capacitor.Figure 4.Effect of 1 µF Noise Reduction Capacitor on Broadband Noise TURN-ON TIMEUpon application of power (cold start), the time required for the output voltage to reach its final value within a specified error band is defined as the turn-on settling time. Two components normally associated with this are: the time for the active circuits to settle, and the time for the thermal gradients on the chip to stabilize. Figure 5 shows the turn-on characteristics of theAD587. It shows the settling to be about 60 µs to 0.01%. Note the absence of any thermal tails when the horizontal scale is ex-panded to 1 ms/cm in Figure 5b.AD587REV. D–5–DYNAMIC PERFORMANCEThe output buffer amplifier is designed to provide the AD587 with static and dynamic load regulation superior to less com-plete references.Many A/D and D/A converters present transient current loads to the reference, and poor reference response can degrade the converter’s performance.Figure 6 displays the characteristics of the AD587 output ampli-fier driving a 0 mA to 10 mA load.Output turn-on time is modified when an external noise reduc-tion capacitor is used. When present, this capacitor acts as an additional load to the internal Zener diode’s current source, re-sulting in a somewhat longer turn-on time. In the case of a 1 µF capacitor, the initial turn-on time is approximately 400 ms to 0.01% (see Figure 5c).a.Electrical Turn-Onb.Extended Time Scalec.Turn-On with 1 µF C N Figure 5.Turn-On CharacteristicsFigure 6a.Transient Load Test Circuit Figure rge-Scale Transient Response Figure 6c.Fine Scale Settling for Transient LoadOUTAD587REV. D–6–In some applications, a varying load may be both resistive and capacitive in nature, or the load may be connected to the AD587 by a long capacitive cable.Figure 7 displays the output amplifier characteristics driving a 1000 pF, 0 mA to 10 mA load.V OUTFigure 7a.Capacitive Load Transient /Response Test CircuitFigure 7b.Output Response with Capacitive Load LOAD REGULATIONThe AD587 has excellent load regulation characteristics. Figure 8 shows that varying the load several mA changes the output byonly a few µV.Figure 8.Typical Load Regulation Characteristics TEMPERATURE PERFORMANCEThe AD587 is designed for precision reference applications where temperature performance is critical. Extensive tempera-ture testing ensures that the device’s high level of performance is maintained over the operating temperature range.Some confusion exists in the area of defining and specifying ref-erence voltage error over temperature. Historically, references have been characterized using a maximum deviation per degree Centrigrade; i.e., ppm/°C. However, because of nonlinearities in temperature characteristics which originated in standard Zener references (such as “S” type characteristics), most manufactur-ers have begun to use a maximum limit error band approach to specify devices. This technique involves the measurement of the output at three or more different temperatures to specify an out-put voltage error band.Figure 9 shows the typical output voltage drift for the AD587L and illustrates the test methodology. The box in Figure 9 is bounded on the sides by thc operating temperature extremes,and on the top and the bottom by the maximum and minimum output voltages measured over the operating temperature range.The slope of the diagonal drawn from the lower left to the upper right corner of the box determines the performance grade of thedevice.Figure 9.Typical AD587L Temperature DriftEach AD587J, K, L grade unit is tested at 0°C, +25°C and +70°C. Each AD587S, T, and U grade unit is tested at –55°C,+25°C and +125°C. This approach ensures that the variations of output voltage that occur as the temperature changes within the specified range will be contained within a box whose diago-nal has a slope equal to the maximum specified drift. The posi-tion of the box on the vertical scale will change from device to device as initial error and the shape of the curve vary. The maxi-mum height of the box for the appropriate temperature range and device grade is shown in Figure 10. Duplication of these results requires a combination of high accuracy and stable temperature control in a test system. Evaluation of the AD587will produce a curve similar to that in Figure 9, but output readings may vary depending on the test methods and equip-ment utilized.Figure 10.Maximum Output Change in mVAD587REV. D –7–NEGATIVE REFERENCE VOLTAGE FROM AN AD587The AD587 can be used to provide a precision –10.000 V output as shown in Figure 11. The V IN pin is tied to at least a +3.5 V supply, the output pin is grounded, and the AD587 ground pin is connected through a resistor, R S , to a –15 V supply. The –10 V output is now taken from the ground pin (Pin 4) instead of V OUT . It is essential to arrange the output load and the sup-ply resistor R S so that the net current through the AD587 is be-tween 2.5 mA and 10.0 mA. The temperature characteristics and long-term stability of the device will be essentially the same as that of a unit used in the standard +10 V output configuration.1nF–15V–10VL <10mASFigure 11.AD587 as a Negative 10 V Reference USING THE AD587 WITH CONVERTERSThe AD587 is an ideal reference for a wide variety of 8-, 12-,14- and 16-bit A/D and D/A converters. Several representative examples follow.10 V REFERENCE WITH MULTIPLYING CMOS D/A OR A/D CONVERTERSThe AD587 is ideal for applications with 10- and 12-bit multi-plying CMOS D/A converters. In the standard hookup, as shown in Figure 12, the AD587 is paired with the AD754512-bit multiplying DAC and the AD711 high-speed BiFET Op Amp. The amplifier DAC configuration produces a unipolar 0 V to –10 V output range. Bipolar output applications and other operating details can be found on the individual product data sheets.Figure 12.Low Power 12-Bit CMOS DAC ApplicationThe AD587 can also be used as a precision reference for mul-tiple DACs. Figure 13 shows the AD587, the AD7628 dual DAC and the AD712 dual op amp hooked up for single supply operation to produce 0 V to –10 V outputs. Because both DACs are on the same die and share a common reference and output op amps; the DAC outputs will exhibit similar gain TCs.Figure 13. AD587 as a 10 V Reference for a CMOS Dual DACPRECISION CURRENT SOURCEThe design of the AD587 allows it to be easily configured as a current source. By choosing the control resistor R Cin Figure 14,you can vary the load current from the quiescent current (2 mA typically) to approximately 10 mA.+V I L = + I BIAS10VR CFigure 14. Precision Current SourceAD587REV. D –8–P R I N T E D I N U . S . A . C 1 1 3 6 a –0–2 / 0 0 ( r e v . D )PRECISION HIGH CURRENT SUPPLYFor higher currents, the AD587 can easily be connected to a power PNP or power Darlington PNP device. The circuit in Figure 15 can deliver up to 4 amps to the load. The 0.1 µF capacitor is required only if the load has a significant capacitive component. If the load is purely resistive, improved high fre-quency supply rejection results can be obtained by removing thecapacitor.Figure 15a. Precision High-Current Current Source Figure 15b.Precision High-Current Voltage SourceCerdip (Q-8) PackageMini-DIP (N-8) Package Small Outline (R-8) PackageOUTLINE DIMENSIONSDimensions shown in inches and (mm).。

Z8F082APJ020SG2156中文资料(zilog)中文数据手册「EasyDatasheet - 矽搜」

高性能8位微控制器Z8喝采！ XP®F082A 列产品规格PS022825-0908版权所有©2008 Zilog公司®公司防护留所有权利.警告：不要使用生命支持生命支持政策ZiLOG产品不得用作生命中关键部件支持设备或系统未经事先书面批准主席和ZILOG股份有限公司总法律顾问.如本文所用生命支持设备或系统是其中（a）打算通过外科手术移植到体内设备,或（b）支持或维持生命,其未履行时,正确使用符合在标签规定使用说明可以合理预期到导致显著伤害使用者.关键部件是在生命支持设备或系统,其不履行可以合理预期造成生命支持设备或系统故障或影响其安全性或效力任何部件.文档免责声明©2008 Zilog公司防护留所有权利.本出版物中关于设备信息,应用程序,或技术描述意在暗示可能用途,并且可以被替代. ZILOG,INC.不承担赔偿责任或提供精度表示资料,设备或技术描述这份文件.作者：Z I L O G A L S O D O E S N O T A S S U M E L I A B I L I T Y F O R I N T E L L E C T U A L P R O P E RT Y 侵权相关以任何方式使用信息,设备或技术此处描述或以其他方式.在本文档中包含信息已经根据机电工程基本原则得到验证.Z8,Z8喝采！和Z8喝采！ XP注册Zilog公司商标.所有其它产品或服务名称均为其各自所有者财产.PS022825-0908iii 修订记录在修订历史记录每个实例反映更改这个文件从以前版本.更多细节,请参见相应页面和适当链接在下表.Date 九月2008修订Level25描写页码增加引用F042A系列回3, 9, 16, 19, 37,251in表1,适用货物,表5,表7,表13,订购信息部分.更改标题Z8喝采！ XP F082A系列并删除引用F042A系列表1,适用货物,表5,表7,表13,订货信息部分.更新图3中,表14,表58通过表60.All2008年5月24十二月2007 2007年7月232210, 41,and95更新表15and表128.更新44, 221功率消耗在电特点一章.修订版本号更新.All2007年6月21PS022825-0908修订记录iv 目录概述. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1特征 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .部分选择指南. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .框图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CPU和外设概述. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .eZ8 CPU功能. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10位模拟数字转换器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .低功耗运算放大器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .内部精密振荡器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .温度感应器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .模拟比较器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .外部晶体振荡器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .低电压检测. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .片上调试. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .通用异步接收器/发送器. . . . . . . . . . . . . . . . . . . . . . .计时器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .通用输入/输出. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .直接驱动LED. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .闪存控制器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .非易失性数据存储. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .中断控制器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .复位控制器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 2 4 5 5 5 6 6 6 6 6 6 6 7 7 7 7 7 7 8 8引脚说明. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9可用软件包. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9引脚配置. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9信号说明. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11引脚特性. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13地址空间. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15寄存器文件. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .程序存储器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .数据存储器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .闪光信息区. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 15 17 17寄存器映射. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 PS022825-0908目录v 复位,停止模式恢复和低电压检测. . . . . . . . . . . . . . 23复位类型. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .复位源. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .上电复位. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .电压欠压复位. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .看门狗定时器复位. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .外部复位输入. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .外部复位指示灯. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .片上调试启动重置. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .停止模式恢复. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .停止模式恢复使用看门狗定时器超时. . . . . . . . . . . . . . .停止模式恢复使用GPIO端口引脚过渡. . . . . . . . . . . . . . .停止模式恢复使用外部复位引脚. . . . . . . . . . . . . . . . .低电压检测. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .复位寄存器定义. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 25 25 26 27 27 28 28 28 29 29 30 30 30低功耗模式. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33STOP模式. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . HALT模式. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .圆周级功率控制. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .功率控制寄存器定义. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 34 34 34通用输入/输出. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37GPIO端口可用性通过设备. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .建筑. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GPIO备用功能. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .直接驱动LED. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .共享复位引脚. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .共享调试引脚. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .晶体振荡器替代. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 V容差. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .外部时钟设置. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GPIO中断. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GPIO控制寄存器定义. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .端口A-D地址寄存器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .端口A-D控制寄存器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .端口A-D数据方向分寄存器. . . . . . . . . . . . . . . . . . . . . . . . . . .端口A-D备用功能子登记. . . . . . . . . . . . . . . . . . . . . . . .37 38 38 39 39 39 40 40 40 45 45 46 46 47 47PS022825-0908目录。

RDA5876p_datasheet_v1.11

RDA5876PSINGLE CHIP FOR BLUETOOTH & FM RADIO TUNERRev.1.11–08.2012GPIO2/ WLAN_ACTIVEHOST_WAKEFM_OUTR1 General DescriptionRDA5876P integrates industry-lead Bluetooth and FM radio tuner into one chip and is optimized for mobile applications. Bluetooth and FM can work simultaneously and independently, with low power consumption levels target to battery powered devices. For the highest integration level, the required board space has been minimized and customer cost has been reduced. Manufacturers can easily and fast integrate RDA5876P on their product to enable a rapid time to market. RDA5876P uses CMOS process with a compact 4*4mm 32-pin QFN package.UART_RX 1 PCM_DOUT 2 PCM_DIN 3 PCM_CLK 4 PCM_SYNC 5 VIO 6 VOUT18 7 NC8UART_TXFM_OUTLVOUT12NC26323130292827NC2524 23NC FM_IP FM_IN AGPIO1/BT_PRIORITY AGPIO0/BT_ACTIVE RF NC NCGND PAD RDA5876P 32 Pins22 21 20 19 18 17910111213141516XIN_32KI2C_SDAXEN_OUTFigure1-1. RDA5876P Top View1.1 Bluetooth FeaturesCMOS single-chip fully-integrated radio and baseband Compliant with Bluetooth 2.1 + EDR specification Bluetooth Piconet and Scatternet support ARM7-based microprocessor with on-chip ROM and RAM Meet class 1, 2 and class 3 transmitting power requirement, support class1 operation with external power amplifier Provides +10dbm transmitting power NZIF receiver with -90dBm sensitivity Battery power supply directly with internal LDO Up-to 4Mbps high speed UART HCI supportCopyright © RDA Microelectronics Inc. 2009. All rights are reserved. The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA.Support AFH Support 3-wire WIFI Co-existence handshake signals Low power consumption Minimum external component Internal 32k LPO.LDO_ONI2C_SCLVBATXINNCRDA Microelectronics, Inc.RDA5876P Datasheet V1.111.2 FM FeaturesCMOS single-chip fully-integrated FM tuner Low power consumption Total current consumption lower than 20mA at 3.0V power supply Support worldwide frequency band 50 -115 MHz Support flexible channel spacing mode 100KHz, 200KHz, 50KHz and 25KHz Support RDS/RBDS Digital low-IF tuner Image-reject down-converter High performance A/D converter IF selectivity performed internally Fully integrated digital frequency synthesizer Fully integrated on-chip RF and IF VCO Fully integrated on-chip loop filter Autonomous search tuning Support 32.768KHz crystal oscillator Digital auto gain control (AGC) Digital adaptive noise cancellation Mono/stereo switch Soft mute High cutProgrammable de-emphasis (50/75 μs) Receive signal strength indicator (RSSI) Bass boost Volume control Line-level analog output voltage I2C control bus interface Directly support 32Ω resistance loading Integrated LDO regulator 1.8 to 5.5 V operation voltage1.3 ApplicationsMobile handset MP3,MP4 and PMP PDA Cordless phoneThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 2 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.112 Table of Contents1 General Description ....................................................................................................................................1 1.1 Bluetooth Features .............................................................................................................................1 1.2 FM Features........................................................................................................................................2 1.3 Applications ........................................................................................................................................2 Table of Contents.........................................................................................................................................3 Bluetooth Section Functional Description.................................................................................................4 Bluetooth Section Features.........................................................................................................................5 Bluetooth Section Electrical Characteristics ............................................................................................6 Bluetooth Section Radio Characteristics...................................................................................................8 FM Section Functional Description .........................................................................................................10 FM Section Electrical Characteristics.....................................................................................................12 FM Section Receiver Characteristics ......................................................................................................13 Pins Description.........................................................................................................................................14 Application Circuit....................................................................................................................................17 Package Physical Dimension ....................................................................................................................17 PCB Land Pattern.....................................................................................................................................18 Change List................................................................................................................................................21 Contact Information .................................................................................................................................222 3 4 5 6 7 8 9 10 11 12 13 14 15The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 3 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.113 Bluetooth Section Functional DescriptionVBATDC/DCBBModemA AΦ BT_RF PLLx xRFLDOROMROMDEnvelonFM_IP LDO_ONPORRAMRAMFM_IN GPIO_FM1AHB ARM TRAP SPI2 FMGPIO_FM2 GPIO_FM3 FM_OUTRVICI2C_SDA I2C_SCLSCUFM_OUTLI2C DMA TIMER PLLXINUART_TX UART_RXUARTAPB BRIDGEAPB GPIO 32K/LPOXIN_32KFigure3-1. RDA5876P Bluetooth Block Diagram RDA5876P is designed for use in UART HCI with handset chipsets. As shown in Figure3-1, RDA5876P integrates radio unit, baseband core, ARM7 core and memory which provides a complete lower Bluetooth protocol stack including the LC, LM and HCI interface.The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 4 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.114 Bluetooth Section FeaturesRadio♦ ♦ ♦ ♦ ♦ ♦ ♦ Build-in TX/RX switch Fully integrated synthesizer without any external component Support external reference clock direct input Class1, 2 and class3 transmit output power supported and over 30dB dynamic control range Supports π/4 DQPSK and 8DPSK modulation High performance in receiver sensitivity and over 80dB dynamic range Integrated channel filterAuxiliary features♦ ♦ ♦ ♦ ♦ On-chip regulator to support battery power supply directly Power management support low power mode Support share handset system reference clock Support 3-wire wifi cooperation handshake protocol Support external class1 PA and antenna switchBaseband♦ ♦ ♦ ♦ ♦ Internal RAM allows fully speed data transfer, mixed voice and data, and fully piconet operation Logic for forward error correction, header error control, access code correlation, CRC, demodulation , encryption bit stream generation, whitening and transmit pulse shaping Support eSCO and AFH Support up to Bluetooth v2.1 + EDR Support A-law, μ-law and CVSD digitize audio CODEC in PCM interfaceInterface♦ ♦ ♦ ♦ Provides UART HCI interface, up-to 4Mbps Provides I2C interface for host to do configuration Provides PCM audio interface Provides 3-wire and 2-wire WIFI Co-existence handshake interfaceBluetooth Stack♦ Compliant with Bluetooth 2.1 + EDR specificationThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 5 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.115 Bluetooth Section Electrical CharacteristicsTable 5-1SYMBOLDC Electrical Specification (Recommended Operation Conditions):DESCRIPTION Supply Voltage from battery or LDO Ambient Temperature CMOS Low Level Input Voltage CMOS High Level Input Voltage CMOS Threshold Voltage MIN 3.3 -20 0 0.7*VIO 0.5*VIO TYP 4.0 27 MAX 4.2 +50 0.3*VIO VIO UNIT V ℃ V V VVBAT Tamb VIL VIH VTHNotes:1. VIO=1.8~3.3VTable 5-2SYMBOLDC Electrical Specification (Absolute Maximum Ratings):DESCRIPTION Ambient Temperature Input Current Input Voltage LNA Input Level MIN -20 -10 -0.3 TYP MAX +60 +10 VIO+0.3 +5 UNIT °C mA V dBmTamb IIN VIN VlnaTable 5-3LDOPower consumption specification(VBAT = 4.0 V, VIO = 2.8V, TA = +27℃, RF 9dBm, LDO mode unless otherwise specified) STATE Headset voice Headset SNIFF HCI only active Both SCAN DeepSleep internal LDO off 1.28S cycle 26Mhz crystal off LDO_ON off INQUIRE and PAGE SCAN DESCRIPTION HV3 type 500ms cycle NO INQUIRE and PAGE SCAN Condition TYP 18 0.5 5.7 1.0 118 7 UNIT mA mA mA mA μA μAIvbat=105uA,Ivio=13uA,External 32K input Ivbat=6uA,Ivio=1uAThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 6 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.116 Bluetooth Section Radio CharacteristicsTable 6-1 Receiver Characteristics ------ Basic Data Rate(VBAT = 4.0 V, TA = 27°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN / 0 / F=F0 + 1MHz F=F0 - 1MHz Adjacent channel selectivity C/I F=F0 + 2MHz F=F0 - 2MHz F=F0 + 3 MHz F=F0 - 3MHz Adjacent channel selectivity C/I F=Fimage 30MHz–2000MHz Out-of-band blocking performance 2000MHz–2400MHz 2500MHz–3000MHz 3000MHz–12.5GHz Intermodulation Spurious output level / / / / / / / -10 -27 -27 -10 -35 -150 TYP -90 / +10 / / / / / / / / / / / / / MAX / / / -5 0 -33 -30 -45 -40 0 / / / / / / UNIT dBm dBm dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm/HzGeneral specificationsSensitivity @0.1% BER Maximum received signal@0.1% BER C/I c-channelNotes:Table 6-2Transmit Characteristics ------ Basic Data Rate(VBAT = 4.0V, TA = 27 °C, unless otherwise specified) SYMBOL General specifications PARAMETER CONDITIONS MIN / 20 / F=F0 + 1MHz F=F0 - 1MHz F=F0 + 2MHz F=F0 - 2MHz F=F0 + 3MHz F=F0 - 3MHz F=F0 + >3MHz / / / / / / / TYP +4 / 0.9 -20 -20 -35 -35 -40 -40 / MAX +10 / / / / / / / / -46 UNIT dBm dB MHz dBm dBm dBm dBm dBm dBm dBmMaximum RF transmit power RF power control range 20dB band widthAdjacent channel transmit powerThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 7 of 22RDA Microelectronics, Inc.F=F0 - >3MHz △f1avg Maximum modulation △f2max Minimum modulation △f2avg/△f1avg ICFT Drift rate Drift (1 slot packet) Drift (5 slot packet) -46 / / 0.80 / / / /RDA5876P Datasheet V1.11 / 164 145 / +4 0.1 -2 -2 / / / / / / / / dBm kHz kHz / kHzkHz/50uskHz kHzNotes:Table 6-3Receiver Characteristics ------ Enhanced Data Rate(VBAT = 4.0 V, TA = 27°C, unless otherwise specified) PARAMETER CONDITIONS MIN / 0 / F=F0 + 1MHz F=F0 - 1MHz Adjacent channel selectivity C/I F=F0 + 2MHz F=F0 - 2MHz F=F0 + 3MHz F=F0 - 3MHz Adjacent channel selectivity C/I F=Fimage / / / / / / / TYP -86 / / / / / / / / / MAX / / +13 +5 0 -20 -20 -40 -40 -7 UNIT dBm dBm dB dB dB dB dB dB dB dBπ/4 DQPSK Sensitivity @0.01% BER Maximum received signal@0.1% BER C/I c-channel8DPSKSensitivity @0.01% BER Maximum received signal@0.1% BER C/I c-channelF=F0 + 1MHz F=F0 - 1MHz Adjacent channel selectivity C/I F=F0 + 2MHz F=F0 - 2MHz F=F0 + 3MHz F=F0 - 3MHz Adjacent channel selectivity C/I F=Fimage/ 0 / / / / / / / /-83 / / / / / / / / // / +18 +5 +5 -20 -20 -35 -35 0dBm dBm dB dB dB dB dB dB dB dBNotes:The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 8 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.11Table 6-4Transmit Characteristics ------ Enhanced Data Rate(VBAT = 4.0 V, TA = 27°C, unless otherwise specified) PARAMETER General specifications CONDITIONS MIN / / / / / / / / RMS DEVM / / / / / / / / / / / / / / 99% DEVM Peak DEVM RMS DEVM TYP +2 -1.6 +7.4 +6.7 +2.4 +7.1 +4.4 +2.7 4.7 / 8.8 4.6 / 11.3 -14.7 -15.2 -51.0 -51.2 -30 -30 / 100 MAX / / / / / / / / / 30 / / 20 / / / / / / / -32 / UNIT dBm dB kHz kHz kHz kHz kHz kHz kHz % % % % % % dBm dBm dBm dBm dBm dBm dBm %Maximum RF transmit powerRelative transmit controlπ/4 DQPSK max w0 π/4 DQPSK max wi π/4 DQPSK max |wi + w0| 8DPSK max w0 8DPSK max wi 8DPSK max |wi + w0| π/4 DQPSK Modulation Accuracy8DPSK Modulation Accuracy99% DEVM Peak DEVM F=F0 + 1MHz F=F0 - 1MHz F=F0 + 2MHzIn-band spurious emissionsF=F0 - 2MHz F=F0 + 3MHz F=F0 - 3MHz F=F0 +/- > 3MHzEDR Differential Phase CodingNotes:The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 9 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.117 FM Section Functional DescriptionLOUTI PGALNAP LNAN LNA +I ADCAudio DSP Coredigital filter MPX decoder stereo/mono audioL DACLimiterQ PGAQ ADCR DACROUT32.768 KHzVCO SynthesizerRDS /RBDS RSSIGPIOGPIORCLK 2.7-5.5 V VDDSCLKMCU LDOInterface Bus SDIO VIOFM ReceiverFigure 7-1. RDA5876P FM Tuner Block Diagram The PGA amplifies the mixer output IF signal and then digitized with ADCs. The DSP core finishes the channel selection, FM demodulation, stereo MPX decoder and output audio signal. The MPX decoder can autonomous switch from stereo to mono to limit the output noise. The DACs convert digital audio signal to analog and change the volume at same time. The DACs has low-pass feature and -3dB frequency is about 30 KHz. Synthesizer The frequency synthesizer generates the local oscillator signal which divide to quadrature, then be used to downconvert the RF input to a constant low intermediate frequency (IF). The synthesizer reference clock is 32.768 KHz. The synthesizer frequency is defined by bits CHAN[9:0] with the range from 50MHz to 115MHz.The receiver uses a digital low-IF architecture that avoids the difficulties associated with direct conversion while delivering lower solution cost and reduces complexity, and integrates a low noise amplifier (LNA) supporting the FM broadcast band (50 to 115MHz), a quadrature image-reject mixer, a programmable gain control (PGA), a high resolution analog-to-digital converters (ADCs), an audio DSP and a highfidelity digital-to-analog converters (DACs). The LNA has differential input ports (LNAP and LNAN) and supports any input port by set according registers bits (LNA_port_sel[1:0]). It default input common mode voltage is GND. The limiter prevents overloading and limits the amount of intermodulation products created by strong adjacent channels. The quadrature mixer down converts the LNA output differential RF signal to low-IF, it also has image-reject function.The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 10 of 22RDA Microelectronics, Inc. Power Supply The RDA5876P FM section integrated LDO which supplies power to the chip. The external supply voltage range is 1.8-5.5 V. RESET and Control Interface select The RDA5876P FM section is RESET itself When VIO is Power up. And also support soft reset by trigger 02H BIT1 from 0 to 1. The control interface is I2C. Control Interface The I2C interface is compliant to I2C Bus Specification 2.1. It includes two pins: SCL and SDA. A I2C interface transfer begins with START condition, a command byte and data bytes, each byte has a followed ACK (or NACK) bit, and ends with STOP condition. The command byte includes a 7-bit chip address (0010000b) and a R/W bit. The ACK (or NACK) is always sent out by receiver. When in write transfer, data bytes is written out from MCU, and when in read transfer, data bytes is read out from RDA5876P. There is no visible register address in I2C interface transfers. The I2C interface has a fixed start register address (0x02h for write transfer and 0x0Ah for read transfer), and an internal incremental address counter. If register address meets the end of register file, 0x3Ah, register address will wrap back to 0x00h. For write transfer, MCU programs registers from register 0x02h high byte, then register 0x02h low byte, then register 0x03h high byte, till the last register. RDA5876P always gives out ACK after every byte, and MCU gives out STOP condition when register programming is finished. For read transfer, after command byte from MCU, RDA5876P sends out register 0x0Ah high byte, then register 0x0Ah low byte, then register 0x0Bh high byte, till receives NACK from MCU. MCU gives out ACK for data bytes besides last data byte. MCU gives out NACK for last data byte, and then RDA5876P will return the bus to MCU, and MCU will give out STOP condition. Details please refer to RDA5876P Programming Guide and RDA5802N Programming Guide and Datasheet.RDA5876P Datasheet V1.11The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 11 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.118 FM Section Electrical CharacteristicsTable 8-1 DC Electrical Specification (Recommended Operation Conditions): SYMBOL VBAT VIO Tamb VIL VIH VTHNotes: 1. VIO=1.8~3.3VDESCRIPTION Supply Voltage Interface Supply Voltage Ambient Temperature CMOS Low Level Input Voltage CMOS High Level Input Voltage CMOS Threshold VoltageMIN 3.3 1.5 -20 0 0.7*VIOTYP 4.0 3.0 27MAX 4.2 3.6 +75 0.3*VIO VIOUNIT V V ℃ V V V0.5*VIOTable 8-2 DC Electrical Specification (Absolute Maximum Ratings): SYMBOL VIO Tamb IIN VIN Vlna Notes: 1. For Pin: SCL, SDA DESCRIPTION Interface Supply Voltage Ambient Temperature Input Current (1) Input Voltage(1) LNA FM Input Level MIN -0.5 -40 -10 -0.3 TYP MAX +3.6 +90 +10 VIO+0.3 +10 UNIT V °C mA V dBmTable 8-3 Power Consumption Specification (VBAT = 4.0 V, VIO=1.5 to 3.6V, TA = -25 to 85 ℃, unless otherwise specified) SYMBOL IA IVIO IAPD IVIO DESCRIPTION Analog Supply Current Interface Supply Current Analog Powerdown Current Interface Powerdown Current Condition ENABLE=1 SCL and SDA inactive ENABLE=0 ENABLE=0 TYP 20 90 5 10 UNIT mA μA μA μAThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 12 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.119 FM Section Receiver CharacteristicsTable 9-1 Receiver Characteristics (VBAT = 4.0 V, VIO= 3.0V, TA = 25 °C, unless otherwise specified)SYMBOL PARAMETER FM Input Frequency Range CONDITIONS Adjust BAND Register 50MHz 65MHz 88MHz 98MHz 108MHz 115MHz MIN 50 80 60 50 60 55 53 35 Single-ended Volume[3:0] =1111 Rload=1KΩ Rload=32Ω 32 Volume[3:0]=0000 1KHz=0dB ±3dB point Low Freq9TYPMAX 115UNIT MHzGeneral specificationsFin1.4 1.2 1.2 1.3 1.3 1.3 70 85 360 57 55 0.15 0.2 100 141.8 1.5 1.5 1.5 1.5 1.8 0.2 0.05 dBμV dB dB dB mV dB dB Ω % dB dB Hz μV EMFVrfSensitivity1,2,3S/N=26dBIP3inInput IP34AGCD=11,2αamS200 S400 VAFL; VAFR S/NAM Suppressionm=0.3 ±200KHz ±400KHz1,2Adjacent Channel Selectivity 400KHz Selectivity Audio L/R Output Voltage (Pins LOUT and ROUT) Maximum Signal to Noise Ratio1,2,3,5Volume [3:0] =1111 Mono2 Stereo6αSCS RLTHDStereo Channel Separation Audio Output Loading Resistance Audio Total Harmonic Distortion1,3,6αAOIRmute BWaudioAudio Output L/R Imbalance1,6 Mute Attenuation Ratio1 Audio Response160 -High FreqPins LNAN, LNAP, LOUT, ROUT and NC(22,23)Vcom_rfin Vcom Vcom_ncPinsLNAN/LNAPInputCommon Mode Voltage Audio Output Common Mode Voltage8 Pins NC ( 22,23 ) Common Mode Voltage 1.00 1.05 1.1V V VFloatingNotes:1. Fin=65 to 115MHz; Fmod=1KHz; de-emphasis=75μs; MONO=1; L=R unless noted otherwise;2. Δf=22.5KHz; 3. BAF = 300Hz to 15KHz, RBW <=10Hz; 6. Δf=75KHz,fpilot=10% 5. PRF=60dBUV; 8. At LOUT and ROUT pins 4. |f2-f1|>1MHz, f0=2xf1-f2, AGC disable, Fin=76 to 108MHz; 7. Measured at VEMF = 1 m V, f RF = 65 to 108MHz 9. AdjustableThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 13 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.1110 Pins DescriptionGPIO2/ WLAN_ACTIVE HOST_WAKEFM_OUTRUART_TXFM_OUTLVOUT12323130292827NC26UART_RX 1 PCM_DOUT 2 PCM_DIN 3 PCM_CLK 4 PCM_SYNC 5 VIO 6 VOUT18 7 NC 8NC2524 23NC FM_IP FM_IN AGPIO1/BT_PRIORITY AGPIO0/BT_ACTIVE RF NC NCGND PAD RDA5876P 32 Pins22 21 20 19 18 17910111213141516XIN_32KI2C_SDAXEN_OUTFigure10-1. RDA5876P Top ViewThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 14 of 22LDO_ONI2C_SCLVBATXINNCRDA Microelectronics, Inc.RDA5876P Datasheet V1.11Table 10-1RDA5876P Pins DescriptionPINNO.DESCRIPTIONUART_RX PCM_DOUT PCM_DIN PCM_CLK PCM_SYNC VIO VOUT18 NC VBAT XIN_32K I2C_SDA I2C_SCL XEN_OUT XIN NC LDO_ON NC NC RF AGPIO0 AGPIO1 FM_IN FM_IP NC NC NC FM_OUTL FM_OUTR VOUT12 GPIO2 HOST_WAKE UART_TX1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32UART data input Synchronous data output Synchronous data input Synchronous data clock Synchronous data sync IO power supply Analog voltage output, connected with decouple capacitor Should be not connected Bluetooth and FM power supply 32.768K clock input I2C interface Data signal I2C interface Clock signal Clock request output For 26Mhz external clock input Should be not connected Internal LDO power on Should be not connected Should be not connected Bluetooth Radio signal Programmable I/O Also used ad bt_active when using WIFI co-existence handshake interface. Programmable I/O. Also used as bt_priority when using WIFI co-existence handshake interface. LNA input port. For single-ended input, LNAN should be connected to RFGND LNA input port. For single-ended input, LNAN should be connected to RFGND Should be not connected Should be not connected Should be not connected Left audio output Right audio output Digital voltage output, connected with decouple capacitor Programmable I/O. Also used as wl_active when using WIFI co-existence handshake interface. Output to wakeup host UART data outputThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 15 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.1111 Application CircuitThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 16 of 22RDA Microelectronics, Inc.RDA5876P Datasheet V1.1112 Package Physical DimensionFigure12-1illustratesthepackage RoHS-compliant. details for the RDA5876P. The package is lead-free andThe information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 17 of 22RDA Microelectronics, Inc. Figure12-1. 32-Pin 4x4 Quad Flat No-Lead (QFN)RDA5876P Datasheet V1.1113 PCB Land PatternFigure13-3.Classification Reflow ProfileTable 13-1Classification Reflow ProfilesSn-Pb Eutectic Assembly 3 ℃/second max. Pb-Free Assembly 3 ℃/second max.Profile Feature Average Ramp-Up Rate (TSmax to Tp) Preheat -Temperature Min (Tsmin) -Temperature Max (Tsmax) -Time (tsmin to tsmax) Time maintained above: -Temperature (TL) -Time (tL) Peak /Classification Temperature(Tp) Time within 5 oC of actual Peak Temperature (tp) Ramp-Down Rate Time 25 oC to Peak100 ℃ 100 ℃ 60-120 seconds 183 ℃ 60-150seconds See Table 9-2 10-30 seconds 6 ℃/second max. 6 minutes max.150 ℃ 200 ℃ 60-180 seconds 217℃ 60-150 seconds See Table 9-3 20-40 seconds 6 ℃/seconds max. 8 minutes max.The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 18 of 22RDA Microelectronics, Inc. TemperatureRDA5876P Datasheet V1.11Table 13-2 Pb-free Process – Package Peak Reflow Temperatures Package Thickness Volume mm3 <350＜2.5mm ≥2.5mm 240 + 0/-5 ℃ 225 + 0/-5 ℃Volume mm3 ≥350 225 + 0/-5 ℃ 225 + 0/-5 ℃Table 13-3 Pb-free Process – Package Classification Reflow Temperatures Package Volume mm3 Volume mm3 Volume mm3 Thickness 350-2000 ＜350 ＞2000＜1.6mm 1.6mm – 2.5mm ≥2.5mm 260 + 0 ℃ * 260 + 0 ℃ * 250 + 0 ℃ * 260 + 0 ℃ * 250 + 0 ℃ * 245 + 0 ℃ * 260 + 0 ℃ * 245 + 0 ℃ * 245 + 0 ℃ **Tolerance : The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature(this mean Peak reflow temperature + 0 ℃. For example 260+ 0 ℃ ) at the rated MSL Level. Note 1: All temperature refer topside of the package. Measured on the package body surface. Note 2: The profiling tolerance is + 0 ℃, - X ℃ (based on machine variation capability)whatever is required to control the profile process but at no time will it exceed – 5 ℃. The producer assures process compatibility at the peak reflow profile temperatures defined in Table 13-3. Note 3: Package volume excludes external terminals(balls, bumps, lands, leads) and/or non integral heat sinks. Note 4: The maximum component temperature reached during reflow depends on package the thickness and volume. The use of convection reflow processes reduces the thermal gradients between packages. However, thermal gradients due to differences in thermal mass of SMD package may sill exist. Note 5: Components intended for use in a “lead-free” assembly process shall be evaluated using the “lead free” classification temperatures and profiles defined in Table13-1, 13-2, 13-3 whether or not lead free.RoHS CompliantThe product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) or polybrominated biphenyl ethers (PBDE), and are therefore considered RoHS compliant.ESD SensitivityIntegrated circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices.The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 19 of 22。

RDA5876&5875_硬件应用指南_V1.5

IV 蓝牙射频前端滤波器可选型号
完全支持客户之前所用的蓝牙射频前端滤波器（单端）型号，有任何疑问，请咨询 RDA 当地 FAE。已验证过的滤波器型号如下表所示，供参考。
品牌
型号
Murata
LFB182G45SG9A213
yer
LTB-1608-2G4H6-B1
Microgate
MBPF18M2450-M11
该信号为省晶体设计下, BT 向系统索要 26MHz 时钟的 request 信号。推荐接到系统 26M 晶体起振的使能控制信号。比如 MTK6225 的 T2 脚（SRCLKENAI，并将该接口配置为相应的模式）。注：如果 Transceiver 芯片采用 AD6548，需要将 XENOUT 同时接到 SRCLKENAI 和 EINT。详见 AD6548 共用晶体应用指南。在非省晶体模式下，该信号为 NC。是芯片的使能信号，需要连到一个 GPIO 口上。电平状态需要通过软件来配置。不要与其他信号复用。需要连到 PMU 上一个常高的电平, 只有关机后才为低电平。在省晶体模式下，由 RF Transceiver 的 26M 时钟输出信号，并经过滤波器网络送给蓝牙芯片。默认情况下用 100pF 电容串联接入 26MHz 即可。
注:
Page 3
RDA Microelectronics, Inc.
RDA5876 & 5875 Application Note V1.0
1. 对于某些 WIFI 芯片只支持 1-wire 模式, 则上图中 WL_ACTIVITY 信号可以不连接.
VI FM 部分
关于 FM 部分 Layout 设计的详细内容请参考 5802(E)的相关应用指南。

W78E58B中文手册

? ? ? ? :December 22, 2004
-1-
? ? : SC1
W78E58B
8.3 AC特性................................................................................................................ 25
8.3.1 时钟输入波形...................................................................................................................... 25 8.3.2 程序读取周期...................................................................................................................... 26 8.3.3 数据读取周期...................................................................................................................... 26 8.3.4 数据写周期.......................................................................................................................... 27 8.3.5 端口访问周期...................................................................................................................... 27

2SJ587资料

-0.1
Drain Current I D (A)
-0.2 -0.16 -0.12
Reverse Drain Current vs. Source to Drain Voltage
VGS = 0,5V
-5 V -10 V
-0.08
-0.04
Pulse Test
0
-0.4 -0.8 -1.2 -1.6 -2.0
Drain Current I D (A)
-0.2 -0.16
Typical Output Characteritics
-6 V -5 V
-4 V
Pulse Test
-0.12 -3 V
-0.08
-0.04
VGS = -2V
0
-2 -4- -6 -8 -10
Drain to Source Voltage VDS (V)
-0.001 Ta=25 °C -0.0005
-0.05 -0.1 -0.2 -0.5 -1.0 -2
-5 -10 -20 -50
Drain to Source Voltage VDS (V)
*Value on the alumina ceramic board.(12.5x20x0.7mm) Value on the alumina ceramic board.(12.5x20x0.7mm)
0.1 0.1
0.4
0.8
+ –
0.1 0.1
0.4
1.6
+ 0.2 – 0.2
0.15
+ –
0.1 0.05
0 ~ 0.1
2SJ587
Unit: mm
Hitachi Code EIAJ

Philips BZX585 BZX585 稳压二极管 DATA SHEET

BZX585 series
MAX. V V µA µA µA µA µA µA µA µA µA µA µA µA µA nA nA nA nA nA nA nA
UNIT
2004 Jun 22
4
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 1 Per type BZX585-B/C2V4 to B/C24 Tamb = 25 °C unless otherwise speciﬁed. WORKING VOLTAGE VZ (V) at IZtest = 5 mA Tol. ± 5% (C) MIN. 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 MAX. 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 15 20 20 20 25 25 25 25 50 50 60 60 60 MAX. 400 450 500 500 500 500 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 at IZtest = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 2 2 2 2 2 2 2 3 10 10 15 20 25 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 10 10 10 10 10 10 10 15 40 45 55 55 70 −1.3 −1.4 −1.6 −1.8 −1.9 −1.9 −1.7 −1.2 −0.5 1.0 2.2 3.0 3.6 4.3 5.2 6.0 6.9 7.9 8.8 10.7 12.4 14.4 16.4 18.4 20.4 TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see ﬁgs 3 AND 4) TYP. 450 440 425 410 390 370 350 325 300 275 250 215 170 150 120 110 110 105 105 100 90 80 70 60 55 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs MAX. 2004 Jun 22 5 Philips Semiconductors

RDA5876编程指南_v1.3

RDA5876编程指南上电配置顺序5875 RF I2C协议5875 Core I2C协议I2C地址配置UART波特率配置UART流控配置PCM接口配置TM配置共用晶体配置32K时钟输入pin配置睡眠握手机制配置蓝牙地址配置PSKEY配置说明寄存器读写说明DUT测试模式进入非调制信号输出调制信号输出上电配置顺序：RDA5875的配置包括RF部分和core部分的配置，分为2种配置方式，一.使用iic来初始化rf部分，配置顺序是：1．芯片上电，拉高LDOON。

2．等待20ms。

3．拉低LDOON4．通过iic配置5875 RF部分。

5．拉高LDOON，等待20ms6．通过iic再次配置5875 RF部分。

7．通过uart 配置5875 pskey rf部分8．通过uart配置5875的core部分。

直接接电池时上电时序图如下：二.使用uart来初始化rf部分，配置顺序是：1.芯片上电，拉高LDOON。

2.等待20ms。

3.通过uart配置5875 RF部分。

4.拉低LDOON，core部分随之复位，复位core部分。

5.拉高LDOON，等待20ms6.通过uart配置5875 RF部分7.通过uart配置5875 pskey rf部分8.通过UART配置5875的core部分。

直接接电池时上电时序图如下：RDA5875的电源输入VBAT可以直接接电池或者接在LDO后，推荐电压范围为3.3v-4v5875 RF 部分I2C 协议：5875 RF 部分的I2C slave 设备地址是0010110。

寄存器地址是8位，数据宽度是16位，高byte 在前，低byte 在后。

读写寄存器时序如下：Chip addressReg addressChip addressRead Byte 1Read Byte 0注意，read5875 Core部分I2C协议：5875 core部分的I2C slave 设备地址是0010101。

BA5912BFP中文资料

Japan / (Internal Sales)
Tokyo Yokohama Nagoya Kyoto 2-1-1, Yaesu, Chuo-ku, Tokyo 104-0082 TEL : +81(3)5203-0321 FAX : +81(3)5203-0300 2-4-8, Shin Yokohama, Kohoku-ku, Yokohama, Kanagawa 222-8575 TEL : +81(45)476-2131 FAX : +81(45)476-2128 Dainagayo Building 9F 3-28-12, Meieki, Nakamura-ku, Nagoya,Aichi 450-0002 TEL : +81(52)581-8521 FAX : +81(52)561-2173 579-32 Higashi Shiokouji-cho, Karasuma Nishi-iru, Shiokoujidori, Shimogyo-ku, Kyoto 600-8216 TEL : +81(75)311-2121 FAX : +81(75)314-6559 TEL : +81(45)476-9270 FAX : +81(045)476-9271
Please contact our San Diego Atlanta Dallas Germany / Dusseldorf TEL : +1(858)625-3630 TEL : +1(770)754-5972 TEL : +1(972)312-8818 TEL : +49(2154)9210 FAX : +1(858)625-3670 FAX : +1(770)754-0691 FAX : +1(972)312-0330 FAX : +49(2154)921400 FAX : +44(1)908-282-528

【精品】职业危害物质接触限值

表1工作场所空气中有毒物质容许浓度
序号
中文名CASNo.
英文名
最高容许浓度
（mg/m3)
时间加权平均容许浓度
（mg/m3)
＊短时间接触容许浓度
(mg/m3）
1.
安妥
（86—88-4)
Antu
-
0.3
0.9＊
2。
氨
（7664-41-7)
Ammonia
-
20
30
3.
2—氨基吡啶(皮)
504—29—0
2-Aminopyridine（skin)
534-52—1
4，6—Dinitro—o—cresol（skin）
-
0.2
0.6*
80.
二氧化氮
10102—44—0
Nitrogendioxide
—
5
10
81。
二氧化硫
7446—09-5
Sulfurdioxide
—
5
10
82.
二氧化氯
10049-04-4
Chlorinedioxide
—
0.3
0。8
83。
二氧化碳
124-38-9
Carbondioxide
—
9000
18000
84。
二氧化锡(按Sn计）
1332-29-2
Tindioxdie，asSn
—
2
5＊
85.
2—二乙氨基乙醇（皮)
100-37—8
2—Diethylaminoethanol(skin)
—
50
100*
86.
二乙撑三胺（皮）
111—40-0

API682机械密封分类编码

API682机械密封分类编码机械密封的材料与结构特点，务必根据下列分类系统来编码：第一位字母：平衡型（B）或者不平衡型（U）第二位字母：单端面（S），无压的双重密封（T）——即第7版中称“串联密封”，或者有压的双重密封（D）——即第7版中称“双端面密封”第三位字母：密封板（即密封压盖）型式：P＝普通式，不带节流衬套；T=节流衬套式，设有急冷、泄漏液接收孔与（或者）排液接孔；A=辅助密封装置，型号需要加以规定。

第四位字母：垫（密封环）材料（见表1）第五位字母：端面材料（见表2）举例来说：一种编码为BSTFM的密封，就是一种平衡型、单端面的、装有带节流衬套的密封板的机械密封，静密封环垫材料为氟橡胶（FKM），动密封环与轴套之间的垫为氟橡胶（FKM），动静环端面副材料为碳对2型碳化钨，对以上材料以外的密封材料应当编码为X，并应在数据单上明确规定之。

机械密封的注解：1、除非另有规定，使用多弹簧密封的弹簧材料务必使用哈斯特洛伊合金（Hastelloy C）。

单弹簧密封的弹簧材料务必使用奥氏体不锈钢（AISI标准型316或者同等材料）。

其它金属零件也务必使用奥氏体不锈钢（AISI标准型316或者同等材料）或者适用于使用条件的其它耐腐蚀材料，但对金属波纹管除外，假如使用金属波纹管，其材料务必由密封制造厂根据使用条件推荐，金属波纹管的腐蚀速率应低于每年50μm（2mils，密耳）。

2、除非另有规定，密封板（即密封压盖）与密封室之间的密封应当使用氟橡胶的O形环，其使用温度低于150℃（300°F）。

假如温度超过150℃以上或者假如有规定，务必使用石墨充填的奥氏体不锈钢蜗形缠绕垫，此蜗形缠绕垫务必能够承受泵送液体的全温（即未采取冷却降温的）。

3、金属密封环不应当使用喷镀覆盖层来代替一体化的密封端面。

4、假如泵送温度超过175℃（350°F）时，泵制造厂与密封制造厂应当共同磋商对密封端面采取冷却冲洗液或者对一头不通的密封室使用不断保持流通的冷却水室。

587B062中文资料

587B062thru587B302240V AC POWER LINE SURGE SUPPRESSOROnly One Name Means ProTek’Tion™05047APPLICA TIONS✔ Hard Wired Equipment AC Power Protection✔ Load Side Distribution Systems✔ Secondary Protection for Light Industrial AC Power IEC COMPA TIBILITY (EN61000-4)✔ 61000-4-5 (Surge): 1kA, 8/20µs - Level 4(Line-Line)FEA TURES✔ Meets ANSI/IEEE C62.41 Requirements ✔ Listed to CSA, File LR65240✔ Differential Mode Protection ✔ Low Clamping Voltage✔ Nanosecond Response Time ✔ Long Life and Maintenance FreeMECHANICAL CHARACTERISTICS✔ Plastic Package✔ Weight: 485 Grams (Approximate)✔ Flammability Rating UL 94V-0✔ Device Marking: Part Number, Date Code, Logo, Voltage and Current Rating DESCRIPTIONThe 587B Series of 240 Volt AC Surge Suppressors is designed for use by the OEM,equipment installer and or maintenance contractor. These modules employ a three stage technology proven to be the most cost effective and reliable method in protect-ing sensitive electronic equipment from over voltage transients.This series is designed to protect AC powered equipment from the 6,000 volt peak open circuit voltage and 3,000 Amp short circuit current as defined in ANSI/IEEE C62.41, Category C1.The 587B Series offers a high degree of protection against 240 VAC EMI line noise. It is ideal for protecting 800 Volt components because the solid state TVS technology assures that the line-to-neutral voltage will not exceed 800 Volts. While the modules are designed for transient voltage protection, the advanced circuitry will also attenuate the amplitude and slow the rate of rise of high frequency noise acting as an EMI filter.The 587B Series includes differential mode protection, which is effective in reducing interference from line to equipment and are effective in reducing equipment gener-ated noise to meet FCC, VDE and CSA interference requirements.U.S PA TENT 4,563,7200 10 20 30 40 50 600 10 20 30 40 50 60FIGURE 2TYPICAL CLAMPING ACTIONOF A 16 AMP MODULEK i l o v o l t s Time - µs264FIGURE 1TRANSIENT VOLTAGE T HREATCONDITIONK i l o v o l t sTime - µs2486Figures 1 and 2 are photographs of digitized waveforms showing the typical clamping action of a 16 ampere module.A 12 Ohm resistor is used to represent a 10 Amp equipment load. The load is then subjected to the ANSI/IEEE C62.41Category CI test conditions (6,000V/3,000A). These photo-graphs contrast the effect on equipment with and without the protector.587B062thru587B302DEVICE CHARACTERISTICSARRESTER DEFINITIONSClamping Voltage: The clamping voltage of an arrester is the voltage that appears across its terminals during conduction of a transient current.Standard Wave Form: The waveform of a surge current or voltage is designated by a combination of two numbers. The first number is for the time of the wave front expressed in microseconds from zero to the peak of the wave. The second number is for the time of the wavetail also expressed in microseconds from zero to the instant that the wavetail reaches one half of the crest or peak value, i.e., 8/20 µs waveform.Transient Current: The transient current of an arrestor is the peak surge current which flows through the arrester when voltage clamping occurs.OPERA TIONFor maximum effectiveness, the protector should be installed directly after the AC line on/off switch and fuse. This will protect the electronics from the AC line switch arcing and the severe transients caused by a fuse clearing.Some heat is produced when operating at full current load, and heat sinking may be required to maintain case temperature below 85°C. The case temperature is measured at the center of the mounting surface. The unit should not be mounted to a low combusting temperature material such as wood.High energy transients will cause a large circulating current in the AC input line (2,500A is possible). To prevent electromagnetic coupling, the AC line on the input side of the protector must be dressed away from other wiring, magnetic shielding may be required. In addition, the electrical service must be connected to a low impedance earth ground.FILTER CHARACTERISTICS (Noise Attenuation dB)MAXIMUM RATINGSSPECIFICA TIONS @ 25°CRESPONSE TO TRANSIENT VOLT AGESCLAMPINGTEST CONDITIONDIFFERENTIAL (Line-to-Neutral)Operating Line Voltage:Maximum Line Current:Transient Voltage:Transient Current:Current Leakage:Line-to-Neutral:Storage & Operating Temperature:(Measured at center ofmounting surface)240 VAC +10%587B062: 6A587B162: 16A 587B302: 30A6000V peak 3000A peak@ 240 VAC 1.0mA -40°C to 85°CPROTECTIONMODE MAXIMUM CLAMPING VOLTAGE OPEN CIRCUIT VOLTAGE @ 1.2/50 µsSHORT CIRCUITCURRENT @ 8/20 µsFrequency (MHz)Differential Mode Attenuation0.15300.5551.0555.05510503045800V6000V3000A587B062thru587B302COPYRIGHT © ProTek Devic es 2003SPECIFICATIONS: ProTek reserves the right to change the electrical and or mechanical characteristics described herein without notice (except JEDEC).DESIGN CHANGES: ProTek reserves the right to discontinue product lines without notice, and that the final judgement concerning selection and specifications is the buyer’s and that in furnishing engineering and technical assistance,ProTek assumes no responsibility with respect to the selection or specifications of such products.P ACKAGE OUTLINE & DIMENSIONSProTek Devices2929 South Fair Lane, T empe, AZ 85282Tel: 602-431-8101 Fax: 602-431-2288E-Mail: sales@ Web Site: 0.169”PROTEK P ART NUMBERCASE (INCHES)CASE (CENTIMETERS)APPROX.WEIGHT IN GRAMSTERMINAL THREADS587B62587B162587B302A 333B 333C 3.53.53.5D 3.853.853.85E 1.51.51.5F 0.60.60.6A 7.627.627.62B 7.627.627.62C 8.898.898.89D 10.1610.1610.16E 3.813.813.81F 1.521.521.52750750750M5M5M5。

华北工控 EMB-5872 嵌入式工业主板说明书 V1.0

EMB-5872嵌入式工业主板说明书V1.0目录第一章产品介绍 (1)1.1简介 (1)1.2产品规格 (1)第二章安装说明 (4)2.1接口位置和尺寸图 (4)2.2安装步骤 (4)2.3跳线功能设置 (5)2.3.1CMOS内容清除/保持设置（JCC） (5)2.3.2防病毒BIOS写跳线（JAV） (6)2.3.3来电开机硬件开关（JAT) (7)2.3.4COM2跳线功能设置（J1、J2、J3） (7)2.3.5LVDS液晶屏额定电压选择跳线（J8) (8)2.4接口说明 (9)2.4.1SATA接口和SATA硬盘电源接口（SATA1，SATA2，J7） (9)2.4.2串行接口（COM1,COM2） (11)2.4.3显示接口（VGA，LVDS） (12)2.4.4LVDS背光控制（J9） (14)2.4.5USB接口（USB_LAN，USB34，USB56，USB78） (14)2.4.6并行接口（LPT） (16)2.4.7GPIO接口（JGP） (17)2.4.8JLPC接口 (17)2.4.9Audio接口 (18)2.4.10键盘鼠标接口（KMS） (18)2.4.11风扇接口 (19)2.4.12MiniPCIE接口（MINI_PCIE，J4) (20)2.4.13PCIE_X4接口 (20)2.4.14PCI接口 (20)2.4.15PC104接口（J12） (20)2.4.16JTAG接口 (22)2.4.17前面板接口（JFP） (23)第三章BIOS程序设置 (25)AMI BIOS刷新 (25)AMI BIOS描述 (25)BIOS参数设置 (25)3.1Main菜单 (26)3.2Advanced菜单 (27)3.2.1CPU Configuration (28)3.2.2IDE Configuration (29)3.2.3Supper IO Configuration (30)3.2.4Hardware Health Configuration (31)3.2.5ACPI Configuration (32)3.2.6AHCI Configuration (36)3.2.7APM Configuration (37)3.2.8Smbios Configuration (39)3.2.9USB Configuration (40)3.2.10On board LAN Option ROM (42)3.3PCI PnP菜单 (43)3.4Boot菜单 (44)3.4.1Boot Setting Configuration (45)3.4.2Boot Device Priority (47)3.4.3Hard Disk Drives (48)3.5Security菜单 (49)3.6Chipset菜单 (50)3.6.1North Bridge Configuration (51)3.6.2South Bridge Chipset Configuration (53)3.7Exit菜单 (54)附录 (56)附一：Watchdog编程指引 (56)附二：术语表 (57)第一章产品介绍1.1简介EMB-5872是一款高性能嵌入式工业主板。

LYW57B资料

• wavelength: 617 nm (amber), 587 nm (yellow) • viewing angle: Lambertian Emitter (120°) • technology: InGaAlP • optical efficiency: 20 lm/W • grouping parameter: luminous flux,
Applications
• traffic signaling • backlighting (illuminated advertising, general
lighting) • Interior and exterior automotive lighting
(e.g. dashboard backlighting, rear combination lamp (RCL)) • substitution of micro incandescent lamps • portable light souce (e. g. bicycle, flashlight) • decorative and entertainment lighting (incl. fiber optic illumination) • signal and symbol luminaire for orientation • marker lights (e.g. steps, exit ways, etc.) • indoor and outdoor commercial and residential architectural lighting
6000 (typ.)
6000 (typ.)
Ordering Code
Q65110A2728 Q65110A2739

铜58-2成分

铜58-2成分铜58-2是一种常见的铜合金，其成分主要由铜和少量的其他元素组成。

铜是一种重要的金属材料，具有良好的导电性、导热性和可塑性。

铜58-2由于其特殊的成分配比，在工业生产和日常生活中得到广泛应用。

铜58-2的成分中含有58%的铜，这是其名称的由来。

在剩余的成分中，一般会添加少量的铝、锰、镍、铁和锡等元素，以提高铜合金的强度、硬度和耐腐蚀性能。

这些元素的加入可以改善铜材料的机械性能，使其更适合于各种工程和制造领域的应用。

铜58-2具有良好的导电性能，适用于制作导电线、电缆和电子元件等。

铜是一种优良的导电材料，电阻率低，能够有效地传导电流。

而铜58-2作为一种铜合金，通过调整其成分配比，可以进一步提高导电性能，使其在电子行业中得到广泛应用。

铜58-2还具有良好的导热性能。

导热性能是指物质传导热量的能力，对于散热和热传导的应用非常重要。

铜58-2的成分中添加的其他元素，可以进一步提高材料的导热性能，使其在制造散热器、制冷设备和电子器件等领域具有重要的应用价值。

铜58-2的可塑性也是其重要的特点之一。

可塑性是指材料在受力作用下发生塑性变形的能力。

铜属于典型的延展性金属，具有很强的可塑性，可以通过加工和锻造等工艺方式制成各种形状的零件和构件。

铜58-2通过添加适量的合金元素，可以进一步增强铜合金的强度和硬度，同时保持较好的可塑性，使其在制造工艺复杂的零部件时表现出色。

铜58-2还具有良好的耐腐蚀性能。

铜本身具有较好的耐腐蚀性，但在特定环境下可能会受到腐蚀的影响。

通过调整铜58-2的成分配比，可以使其具有更强的耐腐蚀性，适用于一些特殊环境下的使用，如海洋工程、化学工业和航空航天等领域。

铜58-2作为一种铜合金，具有良好的导电性、导热性、可塑性和耐腐蚀性能。

其成分中含有58%的铜，并添加适量的其他元素，使其在各种工程和制造领域得到广泛应用。

铜58-2的优异性能，使其成为一种重要的金属材料，对于推动工业发展和提高产品质量具有重要意义。

阿卢浮漂数据教学教材

阿卢浮漂数据阿卢LPB02接口罗非芦苇立式浮漂（行程接口）号数漂长㎝漂身长㎝漂尾长㎝最大直径㎜漂尾先径㎜漂尾元径㎜漂尾特征漂脚直径目数净重(g)0 35.4 8.5 18.5 5.8 0.3 0.9 细硬尾竹脚0.71 38.3 9.5 20.2 6.8 0.3 0.9 细硬尾竹脚0.82 40 9.9 21.2 7.5 0.4 0.9 细硬尾竹脚0.93 41 10.3 21.7 7.7 0.4 0.9 细硬尾竹脚 14 42.2 10.8 22.1 8.3 0.。

4 1 细硬尾竹脚 1.15 43.6 11.4 22.6 8.9 0.5 1 细硬尾竹脚 1.36 44.9 11.7 23.6 9.3 0.5 1 细硬尾竹脚 1.4 LPB01官方介绍: 是一款可对付多种鱼情的钓罗非浮子.LPB01使用心得: 15目长漂尾,一款比较综合的罗非漂,在广东很多用阿芦漂的罗非比赛钓手,都有这一款,它有点类似综合漂里的A01,算是罗非专用漂里的万能型号,钓鱼时给人比较稳定的感觉,调灵调顿都有上好表现.阿卢LPB06罗非芦苇1号立式浮漂（罗非）号数漂长㎝漂身长㎝漂尾长㎝最大直径㎜漂尾先径㎜漂尾元径㎜漂尾特征漂脚直径目数净重(g)1 39.1 6.7 22.2 6.9 0.3 0.9 细硬尾长碳脚150.62 40.4 7.3 22.6 7.7 0.3 0.9 细硬尾长碳脚150.83 41.5 7.9 23.1 8 0.3 0.9 细硬尾长碳脚150.94 42.5 8.3 23.7 8.4 0.3 0.9 细硬尾长碳脚150.95 43.5 8.9 24.2 8.5 0.4 1 细硬尾长碳脚151此款系列浮漂是在钓罗非墨鱼时，可以过滤杂信号，给你提供准确提竿及时的浮漂。

材质：芦苇长碳脚漂尾特征：细硬尾；颜色：本色阿卢LPC01混养芦苇立式浮漂（混养轻口）号数漂长㎝漂身长㎝漂尾长㎝最大直径㎜漂尾先径㎜漂尾元径㎜漂尾特征漂脚直径目数净重(g)1 39.5 7.1 19.9 7.3 0.4 0.9 细硬尾长碳脚0.72 41 7.7 20.5 7.8 0.4 0.9 细硬尾长碳脚0.83 42.3 8.2 21.2 8.2 0.6 1 细硬尾长碳脚0.94 43.6 8.8 21.8 8.3 0.4 1 细硬尾长碳脚15 45 9.3 22.6 8.7 0.4 1 细硬尾长碳脚1此款系列浮漂是一款对付混养在开口较弱时的综合性浮漂，在接口或底钓时都可以给你很干脆的信号。