STP40NF10L中文资料
STPR1010CT中文资料
LITE-ON SEMICONDUCTOR
STPR1010CT thru 1020CT
REVERSE VOLTAGE - 100 to 200 Volts FORWARD CURRENT - 10 Amperes
SUPER FAST GLASS PASSIVATED RECTIFIERS
IR CJ TRR
R0JC
uA
pF ns C/W
Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance Operating and Storage Temperature Range
TJ ,TSTG
C
REV. 4, 13-Sep-2001, KTGC04
CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC Method) Maximum forward Voltage Pulse Width =300us Duty cycle
2.29 2.79 1.14 0.51 0.30 0.64 3.53 4.09 3.56 4.83 L M 1.14 1.40 2.92 2.03 N All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
40塑料挤出机 技术参数
40塑料挤出机技术参数
40塑料挤出机是一种用于制造塑料制品的设备。
它具有以下技术参数：
1. 挤出能力：40塑料挤出机的挤出能力可根据不同的生产需求进行调整。
它可以连续挤出塑料材料，使其通过模具形成所需的形状和尺寸。
2. 加热方式：该挤出机采用电加热方式，通过加热器将塑料材料加热至适宜的温度。
这样可以提高塑料的流动性，使其更容易挤出并形成所需的制品。
3. 控制系统：40塑料挤出机配备了先进的控制系统，可以精确控制挤出过程中的温度、压力和速度等参数。
这样可以确保产品的质量和生产效率。
4. 模具设计：挤出机的模具设计非常重要，它决定了最终产品的形状和尺寸。
40塑料挤出机可以根据不同的产品要求进行模具设计，并具备灵活的模具更换功能，以满足不同产品的生产需求。
5. 能耗控制：为了提高能源利用效率，40塑料挤出机配备了能耗控制系统。
它可以监测和控制设备的能耗，以减少能源浪费并降低生产成本。
40塑料挤出机是一种功能强大、技术先进的设备，适用于制造各种
塑料制品。
它的挤出能力、加热方式、控制系统、模具设计和能耗控制等技术参数都经过精心设计，以提高生产效率和产品质量。
通过使用这种挤出机，我们可以实现高效、高质量的塑料制品生产，满足市场需求。
ST STP16NF06 STP16NF06FP 数据手册
1/9April 2002.STP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FPSTripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.08Ωs EXCEPTIONAL dv/dt CAPABILITY s LOW GATE CHARGE AT 100 o C sAPPLICATION ORIENTED CHARACTERIZATIONDESCRIPTIONThis Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONSs MOTOR CONTROL, AUDIO AMPLIFIERS s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENTTYPE V DSS R DS(on)I D STP16NF06STP60NF06FP60 V 60 V<0.1 Ω<0.1 Ω16 A 11 AABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.(*) Current Limited by package’s thermal resistance (1)I SD ≤ 16A, di/dt ≤ 200A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAX.(2) Starting T j = 25 o C, I D = 8A, V DD = 30VSymbol ParameterValueUnitSTP16NF06STP16NF06FPV DS Drain-source Voltage (V GS = 0)60V V DGR Drain-gate Voltage (R GS = 20 k Ω)60V V GS Gate- source Voltage± 20V I D Drain Current (continuous) at T C = 25°C 1611(*)A I D Drain Current (continuous) at T C = 100°C 117.5(*)A I DM (•)Drain Current (pulsed)6444(*)A P tot Total Dissipation at T C = 25°C 4525W Derating Factor0.30.17W/°C dv/dt (1)Peak Diode Recovery voltage slope 20V/ns E AS (2)Single Pulse Avalanche Energy 130mJ V ISO Insulation Withstand Voltage (DC)--------2500V T stg Storage Temperature-55 to 175°C T jOperating Junction Temperature查询STP16NF06供应商STP16NF06/FP2/9THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFFON (*)DYNAMICTO-220TO-220FPRthj-case Thermal Resistance Junction-caseMax 3.336°C/W Rthj-ambT lThermal Resistance Junction-ambientMaximum Lead Temperature For Soldering PurposeMax62.5300°C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 060V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 20 V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 24V R DS(on)Static Drain-source On ResistanceV GS = 10 VI D = 8 A0.080.1ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS = 15 VI D =8 A6.5S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 03157030pF pF pFSTP16NF06/FPSWITCHING ONSWITCHING OFFSOURCE DRAIN DIODE(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 30 VI D = 8 A R G =4.7 Ω V GS = 10 V (Resistive Load, Figure 3)718ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 48V I D = 16A V GS = 10V103.53.513nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 30 VI D = 8 A R G =4.7Ω, V GS = 10 V (Resistive Load, Figure 3)176ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)1664A A V SD (*)Forward On Voltage I SD = 16 AV GS = 01.3V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 16 Adi/dt = 100A/µs V DD = 30 V T j = 150°C (see test circuit, Figure 5)50883.5ns nC AELECTRICAL CHARACTERISTICS (continued)STP16NF06/FPSTP16NF06/FPSTP16NF06/FP6/9Fig. 3: Switching Times Test Circuits For ResistiveFig. 5: Test Circuit For Inductive Load SwitchingSTP16NF06/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronics® 2002 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.9/9。
SP-404SX Sampler 10 Turbo 产品说明书
SP-404SX10SP-404SX Specifications■ Maximum Polyphony 12 voices ■ Recordable Data Samples: 120 (12 samples x 10 banks)(stored on SD card), Patterns: 120 (12 patterns x 10 banks)(stored on SD card) ■ Sampling Time(Total time for all samples) The maximum sampling time (size) for a single sample is approximately180 minutes in stereo (2 GB). The following shows the approximate total sampling time of thesamples that can be stored on one SD card. Card capacity / Stereo(Mono) 1GB / Approx. 90 min.(180 min.), 2GB / Approx. 180 min.(360 min.), 4GB / Approx. 360 min.(720 min.), 8GB / Approx. 720min.(24 hours), 16GB / Approx. 24 hours(48 hours), 32GB / Approx.48 hours (96 hours), Since the1 GB SD card included with the SP-404SX contains preload data, the available sampling time willbe less than the time above. ■ Data Format 16-bit linear(.wav / aif) ■ Sampling Frequency 44.1kHz ■ Pattern Sequencer Maximum recordable notes: Approx. 16,000 notes, Resolution: 96 ticksper quarter note, Pattern Length: 1–99 measures, Recording method: Realtime Loop Recording (withshuffle quantize function) ■ Effects 29 types ■ Pads 12 + Sub Pad x 1 ■ Controllers Control Knobx 3 ■ Display 7 segments, 3 characters (LED) ■ Onboard Mic Mono x 1 ■ Connectors LINE INPUTjacks (L, R)(RCA phono type), LINE OUTPUT jacks (L, R)(RCA phono type), Headphones (PHONES)jack (Stereo 1/4 inch phone type), MIC jack (1/4 inch phone type), MIDI IN connector, DC IN jack,SD card slot ■ Power Supply DC 9 V (Ni-MH AA SIZE Rechargeable Battery x 6, Alkaline AA SIZEDry Battery x 6 or AC Adaptor) * Batteries sold separately ■ Battery life for continuous use Ni-MHRechargeable batteries: approximately 5 hours, Alkaline dry batteries :approximately 4 hours *These figures will vary depending on the actual conditions of use. ■ Current Draw 450 mA■ Dimensions 177.6 (W) x 256.7 (D) x 72.1 (H) mm, 7 (W) x 10-1/8 (D) x 2-7/8 (H) inches ■ Weight1.2 kg, 2 lbs 11 oz (excluding batteries) ■ Accessories SD card (1GB), SP-404SX UTILITY CD-ROM,AC Adaptor PSB-1U, Owner’s Manual* The specifications are subject to change without notice.● Sample anytime, anywhere with the built-inmic and battery power● 29 DSP effects, including filter, delay, unique voiceeffects, subsonic, and looper● 3 control knobs, 12 trigger pads, and Sub Pad forrapid repeat triggering● Seamless effects switching for smooth, perfectperformance● Pattern sequencer with quantize mode and newshuffle feels● 1GB SD card included; expand sample storage upto 32GB with SDHC● Import audio files from computer, assign samplesto pads with bundled software (Mac/PC)■ SD MEMORY CARDSampling Time Unit: minutes1 GB2 GB4 GB8 GB16 GB32 GB9018036072014402880* Total time for all samples.* The maximum sampling time (size) for a single sample is approximately 180 minutes in stereo (2 GB).* Each sampling time is approximate. The times may change depending on the card specifications.* Since the 1 GB SD card included with the SP-404SX contains preload data, the available sampling timewill be less than the time above.Size of Memory card Stereo180360720144028805760Mono。
示乐思 探头 数据手册说明书
SIGLENT探头数据手册CN01ASIGLENT探头数据手册无源探头1X/10X 1X/10X 1X/10X 1X/10X10X 10X 10X 10XSIGLENT探头数据手册10X单端有源探头1.5GHz 1GHz 1GHz2.5GHzSIGLENT探头数据手册差分有源探头>2.5 GHzSIGLENT探头数据手册电流探头DC-200kHz DC-1MHz DC-300kHz DC-300kHzSIGLENT探头数据手册DC-50MHz DC-100MHz DC-12MHz DC-5MHzSIGLENT探头数据手册23℃ ,60%RH, 附近无载流线，被测导线穿过中心测试，负载阻抗1MΩSIGLENT探头数据手册高压差分探头70MHz 100MHz 70MHz 100MHzSIGLENT探头数据手册50MHz 50MHzSIGLENT探头数据手册高压探头DC-40MHzSIGLENT探头数据手册逻辑探头16 16 16SIGLENT探头数据手册近场探头300kHz to 3 GHz 300kHz to 3 GHz 300kHz to 3 GHz 300kHz to 3 GHzSIGLENT 探头数据手册关于鼎阳鼎阳科技（SIGLENT ）是通用电子测试测量仪器领域的行业领军企业。
同时，也是通用电子测试测量仪器行业第一家A 股上市公司。
2002年，鼎阳科技创始人开始专注于示波器研发，2005年成功研制出第一款数字示波器。
历经多年发展，鼎阳产品已扩展到数字示波器、手持示波表、函数/任意波形发生器、频谱分析仪、矢量网络分析仪、射频/微波信号源、台式万用表、直流电源、电子负载等基础测试测量仪器产品，是全球极少数能够同时研发、生产、销售数字示波器、信号发生器、频谱分析仪和矢量网络分析仪四大通用电子测试测量仪器主力产品的厂家之一，是这四大主力产品领域唯一一个国家级重点“小巨人”企业。
公司总部位于深圳，在美国克利夫兰和德国奥格斯堡成立了子公司，在成都成立了分公司，产品远销全球80多个国家和地区，SIGLENT 已经成为全球知名的测试测量仪器品牌。
SWPA4020S1R0NT 绕线功率电感规格书
Max. Typ. Ω
DCR 0.061 0.047 0.074 0.057 0.090 0.069 0.129 0.099 0.147 0.113 0.130 0.100 0.216 0.166 0.153 0.118 0.239 0.184 0.264 0.203 0.348 0.268 0.377 0.290 0.377 0.290 0.500 0.385 0.538 0.414 0.542 0.417 0.581 0.447 0.611 0.470 0.658 0.506 0.690 0.531 0.690 0.531 1.075 0.827 1.591 1.224 1.976 1.520
A
B
C
D
E
F
a Typ. b Typ. c Typ.
SWPA252010S Fig.1 2.5±0.1 2.0±0.1 1.0 Max. 1.5±0.2 0.80±0.2 0.80±0.2 0.80 0.85 2.0
SWPA252012S Fig.1 2.5±0.1 2.0±0.1 1.2 Max. 1.5±0.2 0.80±0.2 0.80±0.2 0.80 0.85 2.0
SWPA4030S Fig.2 4.0±0.2 4.0±0.2 3.0 Max. 3.3±0.2 0.95±0.2 2.1±0.2 1.9
1.1
3.7
SWPA5012S Fig.3 5.0±0.2 5.0±0.2 1.2 Max. 4.0±0.2 1.25±0.2 2.5±0.2 2.3
1.4
4.2
⑤
M N
Inductance Tolerance
±20% ±30%
⑥ T
Packing Tape Carrier Package
Spectrex 40 40UFI 超快速三光谱火焰检测器说明书
Headquarters: 8200 Market Boulevard | Chanhassen | MN 55317 | USATel: +1 (973) 239-8398 | +1 (800) 452-2107 (US only) | Fax: +1 (973) 239-7614 | Houston: +1 (832) 321-5229E-mail:*********************|FEATURES & BENEFITS 40/40UFI Ultra Fast Triple IR (IR3) Flame Detector Superior performance, reliability and immunity to false alarmsThe new 40/40UFI, an Ultra-Fast multi-spectrum IR3 Flame Detector, detectshydrocarbon fuel and gas fires at longdistances, and is especially designed todetect an explosive 1 ft (0.3m) diametergas cloud explosion in max. 50 msecs for1ft diameter sphere methane-air mixtureexplosion at 66 ft (20m) with the highestimmunity to false alarms. The 40/40UFIIR3 can also detect a 1 ft 2 (0.1m 2) gasoline/n-Heptane pan fire at up to 300 ft (90m).The 40/40UFI is part of the 40/40 Series,the most durable and weather resistantrange of flame detectors currently on themarket. Features include a heated window,to eliminate condensation and icing; HARTcapability for digital communications;lower power requirements; and a compact,lighter design. Due to increased reliability,the 40/40 Series warranty period has beenextended to 5 years and is SIL2 (TUV)approved per IEC 61508.Offshore Oil & Gas installations Onshore Oil & Gas installations and pipelines Chemical plants Petrochemicals plants Storage Tank farmsAircraft hangars • Multi Spectrum Design - for long distance detection and high false alarm immunity• High Speed Response - 50 msec • Sensitivity Selection - to ensure no zone crossover detection• Automatic Built-In-Test (BIT) - to assure continued reliableoperation• Heated window - for operation in harsh weather conditions(snow, ice, condensation)• Multiple output options for maximum flexibility andcompatibility- Relays (3) for Alarm, Fault and Auxiliary- Analogue output for fast detection- 0-20mA (stepped)- HART Protocol for maintenance and asset management- RS-485, Modbus Compatible• High Reliability - MTBF - minimum 150,000 hours• Safety Integrity Level SIL2 (TUV)• 5-Year Warranty • User Programmable via HART or RS-485• Hazardous area zones: - Zones 1 & 2 with IIC gas group vapors present - Zones 21 & 22 with IIIC dust type present • Ex approved to: - ATEX & IECEx - FM/FMC/CSA - TR CU (EAC)• 3rd party Performance - EN54-10 (VdS) - FM3260 (FM)Power Generation facilities Pharmaceutical Industry Printing Industry Warehouses Automotive Industry Explosives & MunitionsWaste Disposal facilities40/40R 40/40U-UB 40/40L4-L4B 40/40UFL 40/40L-LB 40/40I 40/40M 40/40UFISpectral Response Three IR Bands Detection Range Fuel ft / m Fuel ft / m Fuel ft / m (at highest Sensitivity Setting n-Heptane 300 / 90 Kerosene 205 / 62 Methane* 205 / 62for 1ft 2 (0.1m 2Gasoline 300 / 90 Ethanol 95% 185 / 55 LPG* 205 / 62High Speed Response 50 msec for 1ft diameter sphere methane-air mixture explosion at 66ft (20m)Response Time Typically 2 sec at 131ft (40m) Typically 10 sec at 300ft (90m)Adjustable Time Delay Up to 30 seconds Field of View Horizontal 90º; Vertical 90º Built-in-Test (BIT) Automatic Temperature RangeOperating: -67ºF to +167ºF (-55ºC to +75ºC)Option: -67ºF to +185ºF (-55ºC to +85ºC)Storage: -67ºF to +185ºF (-55ºC to +85ºC)Humidity Up to 95% non-condensing (withstands up to 100% RH for short periods) Heated OpticsTo eliminate condensation and icing on the window Operating Voltage 24 VDC nominal (18-32 VDC)Power ConsumptionStandby: Max. 90mA (110mA with heated window)Alarm: Max. 130mA (160mA with heated window)Cable Entries 2 x 3/4" - 14NPT conduits or 2 x M25 x 1.5 mm ISO Wiring 12 - 22AWG (0.3mm 2 - 2.5mm 2)Electrical Input Protection According to MIL-STD-1275B Electromagnetic Compatibility EMI/RFI protected to EN61326-3 and EN61000-6-3SPST volt-free contacts rated 2A at 30 VDC Analogue Output 4.75 - 5.25 V at detectionBIT Fault: 2mA ± 10% Alarm: 20mA ± 5%Normal: 4mA ± 10% Resistance Loop: 100-600 ΩHART Protocol Optional HART communications on the 0-20mA analog current (FSK) - used for maintenance, Dimensions Detector 4" x 4.6" x 6.18" (101.6 x 117 x 157 mm)WeightDetector (St.St.) 6.1 lb (2.8 kg) Tilt mount 2.2 lb (1.0 kg) Detector, aluminum 2.8 lb (1.3 kg)Environmental Standards Meets MIL-STD-810C for Humidity, Salt & Fog, Vibration, Mechanical Shock, High Temp, Low Temp Water and Dust IP66 and IP67 per EN60529, NEMA 250 6PPerformance EN54-10 (VdS) FM3260Reliability IEC61508 - SIL2 (TUV)Tilt Mount 40/40-001 789260-1 (3” pole) *777263 (Plastic)Duct Mount 777670 USB RS485 Harness Kit 794079 *Supplied free of charge with the detectorFor more information view manual or website Ex db eb op is IIC T4 Gb Ex db eb op is IIC T4 Gb Ex tb op is IIIC T96°C Db Ex tb op is IIIC T106°C Db (-55°C ≤ Ta ≤ +75°C) (-55°C ≤ Ta ≤ +85°C)FM/FMC/CSA Class I Div. 1, Groups B, C & D Class II/III Div. 1, Groups E, F & G TR CU (EAC) 1 Ex db eb op is IIC T4 Gb X Ex tb op is IIIC T96°C Db X (–55°C ≤ Ta ≤ +75°C) 1 Ex db eb op is IIC T4 Gb X Ex tb op is IIIC T106°C Db X (–55°C ≤ Ta ≤ +85°C) 1 Ex db eb mb op is II T4 Gb X Ex tb op is IIIC T98°C Db X (–55°C ≤ Ta ≤ +75°C)。
菲尼克斯电气开关电源中文样本
INTERFACE创新电源——系统的可靠保证菲尼克斯电气中国公司地址：南京市江宁开发区菲尼克斯路36号南京江宁236信箱电话：(025)52121888传真：(025)52121555/800 8289722邮编：211100h t t p: //e-mail: phoenix@ CN 11/12 INTERFACE 创新电源TNR 5768710/10.2011-01 Printed In China© PHOENIX CONTACT2011突破性技术——电源解决方案创新促进发展。
菲尼克斯电气的电源产品无疑印证了这一宗旨。
在对理想的电源探索中，我们洞悉市场，与客户密切合作，坚持与执着，不断创造出卓越的新产品技术。
我们的目标是最大程度提高您的设备和系统的可用性。
QUINT电源提供最优产品功能，三个新产品系列在各自领域里树立了新的标杆。
新产品采用ACB技术的冗余模块ACB（自动电流平衡）技术可使您的冗余电源系统的使用寿命翻倍。
该技术确保一定范围内所有的电源平衡输出。
QUINT ORING冗余模块的ACB技术还可检测临界工作状态，并为您提供提前预警。
新产品采用IQ技术的不间断电源具有持续电池监控和智能管理功能的IQ技术可随时为您提供电池的充电状态、剩余工作时间和使用寿命等相关信息。
智能通信功能将预警您危险工况的出现。
这可减少维护工作量，提升系统可用性。
新产品采用SFB技术的DC/DC变换器SFB（选择性触发）技术可在一旦输出回路出现短路时，可靠地切断故障回路。
在短路情况下，将能提供6倍额定输出电流，维持12ms时间。
因此，SFB技术能够可靠地触发标准断路器。
您可快速地进行故障定位，并确保系统的重要设备继续工作。
——采用SFB技术为系统有效性提供最高保证新一代紧凑型QUINT电源，将最大程度地保证系统的有效性。
该电源采用SFB技术（选择性触发技术），能在12ms内输出６倍的额定电流，可靠快速地触发标准断路器脱扣。
塑壳断路器1
10KA
D3 C45N
结论: 级联技术可以使得分断能力大大低于其安 装处预期短路电流的断路器可以在正常分断的条 件下运行.
施耐德电器公司－ABT产品培训教材－ZXF
23
E37960
Compact NS
有选择性的级联
Compact NS 的配合
无选择性的级联
I B
I A 5 0 k A
A
BP B
P A
Compact 系列产品
一般特性
KA
160
150
150
150
140
120
100
80
70
70
70
70
70
60
50
45
40 36
25
20
0
NS80
NS100 NS160/250 NS400/630 NS800/1250
施耐德电器公司－ABT产品培训教材－ZXF
E37951
=N =H =L
9
Compact NS
15 5/1 15 5/1 15 5/1 15 5/1 15 5/1155/1 15 5/1155/11 55/1155/1155/11 55/1 15 5/1155/1 15 5/1 25 0/2 2
15 5/1 15 5/1 15 5/1 15 5/1 15 5/1155/1 15 5/1155/11 55/1155/1155/11 55/1 15 5/1155/1 25 0/20/2 2
在承受门限电流的电动力之后：能量选择性
17
Compact NS
选择性
新系列
产品：
工具：
1 个标准的脱扣器
1 个简单的原则。
富奇高低温老化温箱参数
全面专业的环境模拟解决方案Test it. Heat it. Cool it.伟思富奇环境试验仪器（太仓）有限公司中国江苏省太仓市常胜路102号凯明科技开发园，邮编 215400电话：+86-512-5344 3110 传真： +86-512-5344 3111邮箱：*************************网址： 销售热线：400-858-2158售后热线：800-828-2663伟思富奇环境试验仪器（太仓）有限公司是德国伟思技术-环境模拟业务单元在泛亚太地区唯一的生产厂家。
作为德国伟思环境技术有限公司的子公司，自2004年建立以来，我们在太仓生产和销售标准型环境模拟试验箱、步入式和车入式环境模拟试验箱，这些试验箱可以模拟各种不同的气候条件。
另外，我们也作为总部在中国的代理商，销售和售后德国制造的环境试验箱和工业烘箱。
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关于我们德国伟思技术伟思技术将环境模拟技术和空气调制技术融为一体。
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伟思技术的专家遍布全球15个国家的22个服务中心，他们会随时为您提供服务。
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集团致力于碳技术，环境模拟技术和空气调制技术，金属烧结技术和超声波焊接技术的产品和服务。
2015年集团的营业额已经突破10亿欧元。
中国的生产基地在江苏省太仓市；在北京和上海分别设立分公司；销售和售后联络站包括以下城市：北京，青岛，武汉，长春上海，苏州，无锡成都，重庆，西安广州，深圳热线电话：销售热线：400-858-2158售后热线：800-828-2663伟思富奇（太仓）工厂步入式生产车间一角伟思技术吉森工厂伟思技术巴林根工厂2017年3月，伟思富奇获得了ISO 9001:2015的证书。
SUP40N10-35中文资料
FEATURESD TrenchFET r Power MOSFETS D 175_C Junction TemperatureAPPLICATIONSD Automotive −Motor Drives −12-V SystemsD Note Book PC adaptorsSUP40N10-35Vishay SiliconixNew ProductDocument Number: 72797S-40445—Rev. A, 15-Mar-041N-Channel 105-V (D-S) 175_C MOSFETPRODUCT SUMMARYV (BR)DSS (V)r DS(on) (W )I D(A)0.035 @ V GS = 10 V 37.51050.038 @ V GS = 6 V36.0DGN-Channel MOSFETTO-220ABTop ViewG D S Ordering Information: SUP40N10-35—E3ABSOLUTE MAXIMUM RATINGS (T C = 25_C UNLESS OTHERWISE NOTED)ParameterSymbolLimitUnitDrain-Source Voltage V DS 105Gate-Source VoltageV GS "20VT C = 25_C 37.5Continuous Drain Current (T J = 175_C)T C = 125_CI D 21.5Pulsed Drain Current I DM 75AAvalanche CurrentI AR 35Repetitive Avalanche Energy a L = 0.1 mH E AR 61mJ T C = 25_C 107b Maximum Power Dissipation aT A = 25_C c P D 3.75W Operating Junction and Storage Temperature RangeT J , T stg−55 to 175_CTHERMAL RESISTANCE RATINGSParameterSymbol LimitUnitJ ti t A bi t PCB Mount c40Junction-to-Ambient Free AirR thJA 62.5_Junction-to-Case (Drain)R thJC1.4C/WNotesa.Duty cycle v 1%.b.See SOA curve for voltage derating.c.When mounted on 1” square PCB (FR-4 material).SUP40N10-35Vishay SiliconixNew Product2Document Number: 72797S-40445—Rev. A, 15-Mar-04SPECIFICATIONS (T J =25_C UNLESS OTHERWISE NOTED)ParameterSymbol Test Condition Min Typ Max UnitStaticDrain-Source Breakdown Voltage V (BR)DSS V GS = 0 V, I D = 250 m A 105Gate-Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 24V Gate-Body LeakageI GSSV DS = 0 V, V GS = "20 V "100nAV DS = 105 V, V GS = 0 V1Zero Gate Voltage Drain Current I V DS = 105 V, V GS = 0 V, T J = 125_C 50A g DSS V DS = 105 V, V GS = 0 V, T J = 175_C250m On-State Drain Current aI D(on)V DS w 5 V, V GS = 10 V 75A V GS = 10 V, I D = 15 A0.0260.035Drain Source On State Resistance DS()V GS = 6 V, I D = 10 A0.0280.038Drain-Source On-State Resistance ar DS(on)V GS = 10 V, I D = 15 A, T J = 125_C 0.063WV GS = 10 V, I D = 15 A, T J = 175_C0.077Forward Transconductance ag fsV DS = 15 V, I D = 15 A10S Dynamic bInput Capacitance C iss 2400Output CapacitanceC oss V GS = 0 V, V DS = 25 V, f = 1 MHz270pFReverse Transfer Capacitance C rss 90Total Gate Charge c Q g 3560Gate-Source Charge c Q gs V = 50 V, V = 10 V, I = 40 A 11nC Gate-Drain Charge c Q gd DS ,GS ,D 9Gate Resistance R g 1.7WTurn-On Delay Time c t d(on)1120Rise Time ct r V W1220Turn-Off Delay Time c t d(off)DD = 50 V, R L = 1.25 I D ^ 40 A, V GEN = 10 V, R g = 2.5 W 3045ns Fall Time ct f1220Source-Drain Diode Ratings and Characteristics (T C = 25_C)bContinuous Current I S 37.5Pulsed Current I SM 75A Forward Voltage a V SD I F = 30 A, V GS = 0 V1.0 1.5V Reverse Recovery Time t rr 60100ns Peak Reverse Recovery Current I RM(REC)I F = 30 A, di/dt = 100 A/m s 58A Reverse Recovery ChargeQ rr0.150.4m CNotesa.Pulse test; pulse width v 300 m s, duty cycle v 2%.b.Guaranteed by design, not subject to production testing.c.Independent of operating temperature.SUP40N10-35Vishay SiliconixNew ProductDocument Number: 72797S-40445—Rev. A, 15-Mar-04306001200180024003000204060801000481216201020304050607002040608010015304560750.000.020.040.060.0815304560750123456246810CapacitanceGate ChargeTransconductanceOn-Resistance vs. Drain CurrentV DS − Drain-to-Source Voltage (V)V GS − Gate-to-Source Voltage (V)− G a t e -t o -S o u r c e V o l t a g e (V )Q g − Total Gate Charge (nC)I D − Drain Current (A)V DS − Drain-to-Source Voltage (V)C − C a p a c i t a n c e (p F )V G S − T r a n s c o n d u c t a n c e (S )g f s − O n -R e s i s t a n c e (r D S (o n )W )I D − Drain Current (A)SUP40N10-35Vishay SiliconixNew Product4Document Number: 72797S-40445—Rev. A, 15-Mar-04TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)Source-Drain Diode Forward Voltage0.00.51.01.52.02.5−50−250255075100125150175On-Resistance vs. Junction TemperatureT J − Junction Temperature (_C)V SD − Source-to-Drain Voltage (V)− S o u r c e C u r r e n t (A )I S 1001010.30.60.9 1.2105110115120125130135140−50−250255075100125150175Drain-Source Breakdown Voltage vs.Junction TemperatureT J − Junction Temperature (_C)100.1(a )I D a v 1001Avalanche Current vs. TimeD r a i n -S o u r c e B r e a k d o w n V o l t a g e (V )r D S (o n ) − O n -R e s i i s t a n c e (N o r m a l i z e d )SUP40N10-35Vishay SiliconixNew ProductDocument Number: 72797S-40445—Rev. A, 15-Mar-045THERMAL RATINGSSafe Operating AreaMaximum Avalanche and Drain Currentvs. Case Temperature− D r a i n C u r r e n t (A )I D Square Wave Pulse Duration (sec)210.10.0110−410−310−210−11N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eLegal Disclaimer NoticeVishay Document Number: Revision: 08-Apr-051NoticeSpecifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.。
STP40NF03L中文资料
STP40NF03LN -CHANNEL 30V -0.020Ω-40A TO-220STripFET ™POWER MOSFETs TYPICAL R DS(on)=0.020ΩsLOW THRESHOLD DRIVEDESCRIPTIONThis Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ™”strip-based process.The resulting transistor shows extremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERSs MOTOR CONTROL,AUDIO AMPLIFIERS s DC-DC &DC-AC CONVERTERS®INTERNAL SCHEMATIC DIAGRAMOctober 1999ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)30V V DGR Drain-gate Voltage (R GS =20k Ω)30V V GS Gate-source Voltage±20V I D Drain Current (continuous)at T c =25o C 40A I D Drain Current (continuous)at T c =100o C 28A I DM (•)Drain Current (pulsed)160A P tot Total Dissipation at T c =25oC 70W Derating Factor0.46W/o C E AS (1)Single Pulse Avalanche Energy 250m/JT st g Storage Temperature-65to 175o C T jMax.Operating Junction Temperature175oC(•) Pulse width limited by safe operating area(1) starting T j =25oC,I D =20A ,V DD =15VTYPE V DSS R DS(o n)I D STP40NF03L30V<0.022Ω40A123TO-2201/8THERMAL DATAR thj-case R thj-ambT l Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxMaximum Lead Temperature For Soldering Purpose2.162.5300o C/Wo C/Wo CELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V GS=030VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating T c=125o C110µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS=V GS I D=250µA1 1.7 2.5VR DS(on)Static Drain-source OnResistance V GS=10V I D=20AV GS=4.5V I D=20A0.0180.0280.0220.035ΩΩI D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma xV GS=10V40A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg f s(∗)ForwardTransconductanceV DS>I D(o n)x R DS(on)ma x I D=20A20SC iss C os s C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=083023092pFpFpFSTP40NF03L 2/8ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on Delay TimeRise TimeV DD=15V I D=20AR G=4.7 ΩV GS=4.5V(Resistive Load,see fig.3)35205nsnsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=24V I D=40A V GS=5V187823nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(of f) t f Turn-off Delay TimeFall TimeV DD=15V I D=20AR G=4.7 ΩV GS=4.5V(Resistive Load,see fig.3)90240nsnst d(of f) t f t c Off-voltage Rise TimeFall TimeCross-over TimeVclamp=24V I D=20AR G=4.7 ΩV GS=4.5V(Inductive Load,see fig.5)150155340nsnsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM(•)Source-drain CurrentSource-drain Current(pulsed)40160AAV SD(∗)Forward On Voltage I SD=40A V GS=0 1.5Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=40A di/dt=100A/µsV DD=15V T j=150o C(see test circuit,fig.5)65722nsnCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area Thermal ImpedanceSTP40NF03L3/8Output Characteristics TransconductanceGate Charge vs Gate-source Voltage Transfer CharacteristicsStatic Drain-source On Resistance Capacitance VariationsSTP40NF03L 4/8Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureSTP40NF03L5/8Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.2:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesSTP40NF03L6/8DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.402.720.0940.107D1 1.270.050E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.010.400.3930.409L216.40.645L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.3.75 3.850.1470.151L6ACDED 1FGL7L2Dia.F 1L5L4H 2L9F 2G 1TO-220MECHANICAL DATAP011CSTP40NF03L7/8Information furnished is believed to be accurate and reliable.However,STMicroelect r onics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all informat i on previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©1999STMicroelectronics –Printed in Italy –All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japa n -Malaysia -Malta -Morocco -Singapore -Spain -Sweden -Switzerland -United Kingdom -U.S.A..STP40NF03L8/8。
SL40N10原厂资料
Lead Free and Green Devices AvailableC unless otherwise noted)Symbol Parameter Value100±20401101.25 A50 W25 W-55 to 15050Figure 1．Switching times test circuit for Resistive loadFigure 2. Gate charge test circuitFigure 3．Test circuit for inductive load and diode recovery timesFigure 4. Unclamped Inductive load test circuit switchingFigure 5. Unclamped inductive waveformFigure 6.Switching time waveformMay 2011Doc ID 0065 Rev 1 5/8Test circuitL 40N10Package InformationTO-252TO-252MILLIMETERSINCHESS Y M B O LMIN.MAX.MIN.MAX. A 2.182.390.0860.094 A10.130.005 b 0.50 0.890.0200.035 b3 4.95 5.460.1950.215 c 0.46 0.610.0180.024 c2 0.46 0.890.0180.035 D 5.33 6.220.2100.245 D1 4.57 6.000.1800.236E 6.35 6.730.2500.265 E1 3.816.000.1500.236 e 2.29 BSC 0.090BSCH 9.40 10.410.3700.410 L 0.90 1.780.0350.070 L3 0.892.030.0350.080 L41.020.040 00°8°0°8°May 2011 Doc ID 0065 Rev 1 6/8Package mechanicaldata L 40N10PackageCarrier Tape & Reel DimensionsApplicationAHT1Cd D W E1 F330.0±2.00 50 MIN16.4+2.00 -0.00 13.0+0.50-0.20 1.5MIN.20.2MIN.16.0±0.30 1.75±0.10 7.5±0.10 P0 P1 P2 D0 D1 T A0 B0 K0 TO-2524.00±0.108.00±0.102.00±0.051.5+0.10-0.001.5MIN.0.6+0.05-0.406.80±0.1010.4±0.202.50±0.20Devices per UnitPackage TypeUnit Q uantity Quantity TO-252Tape & Reel2500May 2011 Doc ID 0065 Rev 1 7/8L 40N10Please Read CarefullyInformation in this document is provided solely in connection with DIN-TEK products. DIN-TEK Microelectronics and its subsidiaries (“DIN-TEK”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All DIN-TEK products are sold pursuant to DIN-TEK’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the DIN-TEK products and services described herein, and DIN-TEK assumes no liability whatsoever relating to the choice, selection or use of the DIN-TEK products and services described herein.No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by DIN-TEK for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNLESS OTHERWISE SET FORTH IN DIN-TEK IS TERMS AND CONDITIONS OF SALE DIN-TEK DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF DIN-TEK PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.）UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED DIN-TEK REPRESENTATIVE, DIN-TEK PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. DIN-TEK PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.Resale of DIN-TEK products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by DIN-TEK for the DIN-TEK product or service described herein and shall not create or extend in any manner whatsoever, any liability of DIN-TEK.DIN-TEK and the DIN-TEK logo are trademarks or registered trademarks of DIN-TEK in various countries. Information in this document supersedes and replaces all information previously supplied.The DIN-TEK logo is a registered trademark of DIN-TEK Microelectronics. All other names are the property of their respective owners.© 2011 DIN-TEK Microelectronics - All rights reservedDIN-TEK Microelectronics group of companies8/8。
士林变频器说明书
(注 3) 交流电抗器 / 直流电抗器使用的好处︰ 1. 变频器在运转时会产生高频谐波电流，高频谐波电流会经由电源部流出，将对其它用电设备 造成破坏(包括发电设备)，加装「交流电抗器」或者「直流电抗器」能有效的吸收高频谐波电流。 对于「交流电抗器/直流电抗器」的选购如有疑惑，欢迎来电咨询。 2. 提高功率因子与降低三相电源电压不平衡的影响。
REV FWD
SET SH-DU01
PU Digital Unit
1-3-4 操作器 SH-DU02（0.75K ~3.7K）
Shihlin
MON
EXT
REV
Hz A V PU FWD
REV FWD
SET SH-DU02
PU Digital Unit
－5－
1-4 各部分.0
17.5
24.0
33.0
过电流能力
150% 60 秒 ； 200% 0.5 秒 (反限时特性)
最大输出电压
3 相 200~230V
额定电源电压
3 相 200~230V 50Hz / 60Hz
电 电源电压容许范围
170~253V 50Hz / 60Hz
源 电源频率变动范围
±5%
电源容量 kVA
－1－
1-2 一般规格 (变频器特性)
控制方式
SPWM 控制， V/F 控制。
输出频率范围
0.2~400Hz (启动频率设定范围为 0~60Hz)。
频率设定在 100Hz 之内，分辨率为 0.01Hz :
数字设定
频率设定
频率设定在 100Hz 以上时，分辨率为 0.1Hz。
【商品说明书】fortinet40f中文版说明书
fortinet40f中文版说明书1️⃣ 设备概述与开箱检查Fortinet 40F作为一款高性能的企业级防火墙，集成了先进的威胁防护、应用控制以及网络可见性等功能，专为中型企业及分支机构设计。
在初次使用前，请进行开箱检查，确保设备完好无损，配件齐全，包括但不限于防火墙主机、电源线、安装光盘（或电子版软件下载链接）、快速安装指南等。
2️⃣ 硬件安装与初始配置2.1 硬件安装将Fortinet 40F防火墙放置于通风良好、干燥且稳固的位置，确保设备周围有足够的空间以便于散热。
连接电源线至防火墙及电源插座，并开启电源开关，等待设备启动。
使用网线将防火墙的LAN口连接到内部网络的交换机或路由器，WAN口连接到外部网络（如互联网）。
2.2 初始配置使用PC或笔记本电脑，通过网线直接连接到防火墙的任意一个LAN口，或设置PC为同一子网内的静态IP地址，确保能够访问防火墙的管理界面。
打开浏览器，输入防火墙默认的管理IP地址（如192.168.1.1，具体请参考快速安装指南），登录管理界面。
首次登录需进行管理员账户的设置，包括用户名、密码及安全问题的配置，确保账户安全。
根据提示完成基本网络设置，包括时间设置、DNS服务器配置等。
3️⃣ 高级配置与安全策略3.1 网络接口配置在防火墙管理界面中，配置各个网络接口的IP地址、子网掩码、网关等信息，确保网络通信顺畅。
根据需要启用VLAN（虚拟局域网）功能，优化网络流量管理。
3.2 安全策略制定制定详细的安全策略，包括访问控制列表（ACL）、NAT（网络地址转换）、端口转发等，以控制进出网络的流量，防止未经授权的访问。
启用防火墙内置的病毒防护、入侵检测与防御（IDSIPS）系统，实时监控并阻止潜在的网络威胁。
配置应用控制策略，限制或允许特定应用程序的网络访问，提高网络安全性。
3.3 日志审计与报告启用日志记录功能，记录所有进出网络的数据包信息，便于后续的安全审计和故障排查。
电源线SPTSJTSVT规格是代表什么意思
电源线SPTSJTSVT规格是代表什么意思电源线SPT/SJT/SVT规格是代表什么意思？电源线SPT/SJT/SVT规格是代表什么意思？(1).美规电线(flexible cord)参考的标准为UL62、UL1581.SPT、SJT、SVTSPT-1:(Service Parallel Thermoplastic)热塑型平⾏线.最⼤可⽣产到20~18AWG(2芯或3芯)SPT-2:最⼤⽣产到18~16AWG(2芯或3芯)SPT-3:最⼤⽣产到18~10AWG(2芯或3芯)SVT(Service Vacuum thermoplastic):18~16AWG(2芯或3芯)SJT(Service Junior thermoplastic):18~10AWG(2芯~5芯)ST:18-2AWG(2芯或多芯)l 印刷要求:UL规定电线上必须印UL、CSA logo,最低60℃可印也可不印,印字之间距不可超过610mm.l UL E135710<档案>SPT-1 SPT-2 SPT-1W SPT-2W SPT-3 NISPT-1 NISPT-2 SVT SJT SJTW ST STW l CSA LL95937<档案> SPT-1 SPT-2 SPT-3 SVT SJTl UL与CSA对电线的温度对照UL CSA60℃60℃75℃60℃90℃60℃105℃105℃(2).欧规电线:(欧共型).H03VVH2-F0.752/2CH harmonized(欧共型)03 300/300V05 300/500V07 450/750VV: PVC insulation.V: Jacket PVC.H2: Flat Non-separate cable.H: Flat Separate cable.F: fine wire-flexible cord.H: Extra-fine wire.U: Solid.R: Stranded0.75MM2 Cross sectional size of conductors(截⾯积).(3).⽬前公司已申请认证的电线: VDE H05V-KH03VH-H 2*0.75*0.5 H05VV-F 2*0.75H03VV-F 2*0.75*0.5 H05VV-F 2*1.0H03VV-H2 2*0.75*0.5 H05VV-F 3*0.75H03VV-F 3G*0.75*0.5 H05VV-F F3G*1.0H05VV-F 2*1.5 H05VVH2-F 0.75*2H05VV-F 3G*1.5 H05VVH2-F 2*1.0以上线材具体由哪个认证机构授权需查阅相关档案.三. 插头⽅⾯(1).美规插头结构,UL498及UL1681中规定(依NEMA) NEMA:(National Electrical Manufacturers Association.)美国电机制造协会.常见的⼏种:1-15R: 2Pole 2-Wire 125V 15A Receptacle (SF-51)1-15P: 2Pole 2-Wire 125V 15A Plug (SF-21.23.22A)2-15~30R: 2Pole 2-Wire 250V 15A Receptacle2-15~30P: 2Pole 2-Wire 250V 15A Receptacle5-15~50R: Receptacle Plug (SF-52…)5-15~50P: 2Pole 3-Wire 125V 15A Receptacle (SF-31.31N.32.33.37.45.46.32D)6-15~50P(R): 2Pole 3-Wire 250V 15A~50A7-15~50P(R): 2Pole 3-Wire 277V 15A~50A10-20~50P(R): 3Pole 3-Wire 125V/250V 20A~50A11-15~50P(R): 3Pole 3-Wire 250V 15A~50Al 插头的检验规范主要依据(817)l 插头中的要求:UL规定:不能出现电流及电压及UL logo;可以出现档案号或公司交易标志. CSA规定:不能出现电流及电压但可以出现CSA logo 档案号或公司交易标志.如果制造⼚是属予公司需印上分公司代码.(2).欧规插头:A.主要参照IEC 60083及60320规范.B.⽬前认证:SF-01 SF-81SF-03 SF-82SF-04 (Plug) SF-83 (Connector)SF-05 SF-85ASF-87C.检验规范:Plug ConnectorIEC 60 884 DIN 0625CEE 7 EN 60320EN 50075DIN 0620四. CB与CE的含意(1).CB:(Certification Bodies)认证体系.CB制度是国际电⼯委员会(IECEE)建⽴的⼀套全球性的互认制度.全球有3 4个国家,45个认证机构参加这⼀互认制度.(企业从其中⼀个认证机构获得CB证书后,可以较⽅便地转换成其它机构的认证证书.由此可以取得进⼊相关国家市场的准⼊证.)(2).CE:(European Communities)欧盟委员会CE标⽰是产品在欧盟境内销售的市场准⼊证明.a.CE标志向进⼝国海关表⽰.该产品符合相关的欧盟指令同时欧盟也努⼒使成员国之间的贸易往来更加顺畅.b.CE标志使产品合法进⼊以下⼗⼋国市场:奥地利、⽐利时、丹麦、芬兰、法国、德国、希腊、冰岛、爱尔兰、意⼤利、列⽀敦⼠登、卢森堡、荷兰、挪威、葡萄⽛、西班⽛、瑞典、英国.c. CE标志表⽰产品制造商或进⼝商所负的责任.制造商或进⼝商⾃⾏宣告其产品符合相关欧盟指令.CE标志并⾮经由认证机构颁发.d.其它由第三⽅机构颁发的认证可以与CE标志同时使⽤,但不能够取代CE标志.e.CE标志可以直接标注在产品上,亦可以与CE标注在产品的⽤户⼿册或包装上.另:EN60799规定PLUG<欧规>不能够使⽤“CE”标志(SF-01.03等).Conne ctor或PLUG Connector可以有“CE”标志.电线规格北美线材的线规与国内的表⽰⽅法不同，是以“AWG”为单位。
艾默生灵冻
使用说明书采用先进的技术致力于为客户提供世界级的产品Array艾默生在家用、商用和工业应用方面，是世界领先的供热、通风、空调和冷冻解决方案提供商，我们为客户提供先进的技术解决方案、完善的技术支持和培训服务。
从20世纪40年代的第一台半封闭式压缩机和20世纪50年代的全封闭式压缩机，从20世纪80年代的高效Dicus 半封闭压缩机和20世纪90年代的空调和制热用涡旋压缩机，到今天最新的Stream半封闭压缩机以及数码涡旋压缩机，在过去的80多年里，我们向市场引入了众多的创新科技。
不仅如此，我们还为空调和冷冻市场提供非同一般的解决方案。
艾默生是空调和冷冻业界主要的解决方案提供商，旗下的谷轮品牌产品提供了多种多样的解决方案：从主要冷媒都适用的涡旋和半封闭压缩机，到可变能力输出调节的压缩机以及装备了智能电子控制元器件的压缩机，艾默生引领压缩机科技发展至新的高度。
我们的使命：保障居民舒适和健康保障食品质量和可持续性改善能效和保护环境建立可持续性的基础设施在美国 The Helix 创新中心持续创新23灵冻TM系列涡旋冷凝机组声明感谢购买艾默生灵冻™系列涡旋冷凝机组。
灵冻™系列涡旋冷凝机组在制冷量和运行范围上均表现出市场领先的品质,专为中温和低温冷冻应用而设计,具有高可靠性和高效率的特点,并能持续监控压缩机运行状态,显示冷凝机组的运行或故障状态。
为保证机组的安全可靠运行,灵冻™系列涡旋冷凝机组的安装必须遵循行业标准,其选型、安装和维修必须由专业人员进行。
本用户手册并未包含所有制冷设备安装需遵循的行业准则。
对于由无经验或未经专业培训的人员操作、或由于错误的安装设计造成的损失,将不作为合理的追责理由。
如有任何疑问,请向当地销售办公室提供机组铭牌上的机组型号和序列号进行咨询。
如随机附带的接线图与本手册中的接线图发生不符情况,请以随机附带的接线图为准。
灵冻TM系列涡旋冷凝机组灵冻TM系列涡旋冷凝机组已享誉市场,以其节约能耗、友好的控制体验在亚洲市场取得巨大成功。
STMicroelectronics STPS10M120SF 高频微型DC DC转换器接线板芯片说
STPS10M120SFFeatures•Low profile design – package height of 1.1 mm typ.•Wettable flanks for automatic visual inspection •Low forward voltage drop •Avalanche capability •ECOPACK ®2 compliantApplications•Switching diode •DC / DC converter •LED Lighting •SMPS•Secondary rectification •Auxiliary powerDescriptionThis high voltage Schottky barrier rectifier has been optimized for use in highfrequency miniature DC/DC converters, reverse battery protection, battery chargers and adaptors.Packaged in PSMC (TO-277A), the STPS10M120SF provides a high level ofperformance in a compact and flat package which can withstand very high operating junction temperature.120 V power Schottky rectifierSTPS10M120SFDatasheetSTPS10M120SFCharacteristics 1CharacteristicsTable 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short-circuited)1.(dP tot/dT j) < (1/R th(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.Table 2. Thermal resistance parametersFor more information, please refer to the following application note:•AN5088: Rectifiers thermal management, handling and mounting recommendationsTable 3. Static electrical characteristics (anode terminals short-circuited)1.Pulse test: t p = 5 ms, δ < 2%2.Pulse test: t p = 380 µs, δ < 2%To evaluate the conduction losses, use the following equation:P = 0.53 x I F(AV) + 0.014 x I F2(RMS)For more information, please refer to the following application notes related to the power losses:•AN604: Calculation of conduction losses in a power rectifier•AN4021: Calculation of reverse losses in a power diodeSTPS10M120SFCharacteristics (curves) 1.1Characteristics curvesFigure 7. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxyprinted board FR4, e Cu= 35 µm) (PSMC (TO-277A))020406080100120012345678910STPS10M120SFCharacteristics (curves)2Package informationIn order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ®packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: . ECOPACK ® is an ST trademark.2.1PSMC (TO-277A) package information•Epoxy meets UL94,V0•Cooling method : by conduction (C)Figure 8.PSMC (TO-277A) package outlineSTPS10M120SFPackage informationSTPS10M120SFPSMC (TO-277A) package information Table 4. PSMC (TO-277A) package mechanical dataFigure 9. PSMC (TO-277A) package footprint in mm (in inches)STPS10M120SFOrdering information 3Ordering informationTable 5. Ordering informationSTPS10M120SFRevision historyTable 6. Document revision historySTPS10M120SFIMPORTANT NOTICE – PLEASE READ CAREFULLYSTMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.No license, express or implied, to any intellectual property right is granted by ST herein.Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.Information in this document supersedes and replaces information previously supplied in any prior versions of this document.© 2018 STMicroelectronics – All rights reservedSTPS10M120SF。
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1/8June 2002STP40NF10LN-CHANNEL 100V - 0.028Ω - 40A TO-220LOW GATE CHARGE STripFET™ POWER MOSFET(1) Starting T j = 25°C, I D = 20A, V DD = 40Vs TYPICAL R DS (on) = 0.028Ωs EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED sAPPLICATION ORIENTED CHARACTERIZATIONDESCRIPTIONThis Power Mosfet series realized with STMicro-electronics unique STripFET process has specifical-ly been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.APPLICATIONSs HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVEABSOLUTE MAXIMUM RATINGS(q ) Pulse width limited by safe operating areaTYPE V DSS R DS(on)I D STP40NF10L100 V< 0.033 Ω40 ASymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)100V V DGR Drain-gate Voltage (R GS = 20 k Ω)100V V GS Gate- source Voltage± 17V I D Drain Current (continuos) at T C = 25°C 40A I D Drain Current (continuos) at T C = 100°C 25A I DM (l )Drain Current (pulsed)160A P TOT Total Dissipation at T C = 25°C 150W Derating Factor1W/°C E AS (1)Single Pulse Avalanche Energy 430mJ T stg Storage Temperature–65 to 175°C T jMax. Operating Junction Temperature175°CSTP40NF10L2/8THERMAL DATAELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMICRthj-case Thermal Resistance Junction-case Max 1°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0100V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating1µA V DS = Max Rating, T C = 125 °C 10µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 17V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250µA 11.72.5V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 20 A 0.0280.033ΩV GS = 5V, I D = 20 A0.0300.036ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS = 15V , I D = 20 A25S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 02300pF C oss Output Capacitance 290pF C rssReverse Transfer Capacitance125pF3/8STP40NF10LELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)Turn-on Delay Time V DD = 50 V, I D = 20 A R G =4.7Ω V GS = 4.5V (see test circuit, Figure 3)25ns t r Rise Time 82ns Q g Total Gate Charge V DD= 80V, I D =40A,V GS = 5V4664nC Q gs Gate-Source Charge 12nC Q gdGate-Drain Charge22nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t f Turn-off-Delay Time Fall TimeV DD = 50 V, I D = 20 A,R G=4.7Ω, V GS = 4.5V (see test circuit, Figure 3)6424ns ns t d(off)t f t cOff-voltage Rise Time Fall TimeCross-over TimeVclamp =80V, I D = 40 A R G =4.7Ω, V GS = 4.5V (see test circuit, Figure 3)512953ns ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 40A I SDM (1)Source-drain Current (pulsed)160A V SD (2)Forward On Voltage I SD = 40 A, V GS = 0 1.3V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 40 A, di/dt = 100A/µs, V DD = 30V, T j = 150°C (see test circuit, Figure 5)1104678ns nC ASTP40NF10L4/85/8STP40NF10LNormalized Gate Threshold Voltage vsSource-drain Diode Forward CharacteristicsNormalized On Resistance vs TemperatureNormalized Drain-Source Breakdown vsTemperatureSTP40NF10L6/8Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadSTP40NF10L7/8STP40NF10L8/8Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.© 。