IXGN50N60BD2中文资料

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FGH40N60SMD;中文规格书,Datasheet资料

Typ.
-
Max.
0.43 1.5 40
Package Marking and Ordering Information
Device Marking
Device
FGH40N60SMD
FGH40N60SMD
Package
TO-247
Reel Size
-
Tape Width
-
Units
oC/W oC/W oC/W
IF = 20A
TC = 25oC TC = 175oC
Erec
Reverse Recovery Energy
TC = 175oC
trr
Diode Reverse Recovery Time IF =20A, dIF/dt = 200A/ms
TC = 25oC TC = 175oC
Qrr
Diode Reverse Recovery Charge
TC = 25oC TC = 175oC
Min.
-
Typ.
2.3 1.67 48.9 36 110 46.8 445
Max
2.8 -
Unit s
V uJ ns
nC
FGH40N60SMD Rev. A
3
/

FGH40N60SMD 600V, 40A Field Stop IGBT
100
20V
12V
15V
10V
Collector Current, IC [A]
Collector Current, IC [A]
80
80
60
60
VGE = 8V
VGE = 8V
40

50N60场效应管资料

UNISONIC TECHNOLOGIES CO., LTD50N06MOSFET50 Amps, 60 VoltsN-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.It is mainly suitable electronic ballast, and low power switching mode power appliances.FEATURES* R DS(ON) = 23m Ω@V GS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer Capacitance ( C RSS = typical 80 pF ) * Fast switching capability* 100% avalanche energy specified * Improved dv/dt capabilitySYMBOL1.GateTO-22011TO-220F*Pb-free plating product number: 50N06LORDERING INFORMATIONOrder Number Pin AssignmentNormalLead Free Plating Package 1 2 3 Packing50N06-TA3-T 50N06L-x-TA3-T TO-220 G D S Tube 50N06-TF3-T 50N06L-x-TF3-T TO-220F G D S TubeABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 VT C = 25 50 AContinuous Drain Current T C = 100 I D35 ADrain Current Pulsed (Note 1) I DM 200 A Single Pulsed Avalanche Energy (Note 2) E AS 480 mJ Repetitive Avalanche Energy (Note 1) E AR 13 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7 V/nsTotal Power Dissipation (T C = 25 ) 130 WDerating Factor above 25P D0.9 W/ Operation Junction Temperature T J -55 ~ +150 Storage Temperature T STG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL DATAPARAMETER SYMBOL MIN TYP MAX UNITThermal Resistance, Junction-to-Case θJC 1.15 °C/W Thermal Resistance, Case-to-Sink θCS 0.5 °C/W Thermal Resistance, Junction-to-Ambient θJA 62.5 °C/WELECTRICAL CHARACTERISTICS T C = 25 unless otherwise specifiedPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 µA 60 V Breakdown Voltage Temperature Coefficient BV DSS /△T J I D = 250 µA,Referenced to 250.07 V/V DS = 60 V, V GS = 0 V µADrain-Source Leakage Current I DSSV DS = 48 V, T C = 1251 µA Gate-Source Leakage Current V GS = 20V, V DS = 0 V 100 nAGate-Source Leakage Reverse I GSSV GS = -20V, V DS = 0 V -100 nA On Characteristics Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250 µA 2.0 4.0 V Static Drain-Source On-StateResistanceR DS(ON) V GS = 10 V, I D = 25 A 18 23 m ΩDynamic Characteristics Input Capacitance C ISS 900 1220 pFOutput Capacitance C OSS 430 550 pFReverse Transfer Capacitance C RSSV GS = 0 V, V DS = 25 Vf = 1MHz80 100 pF Dynamic Characteristics Turn-On Delay Time t D(ON) 40 60 nsRise Time t R 100 200 ns Turn-Off Delay Time t D(OFF) 90 180 nsFall Time t F V DD = 30V, I D =25 A, R G = 50Ω (Note 4, 5) 80 160 ns Total Gate Charge Q G 30 40 nCGate-Source Charge Q GS 9.6 nCGate-Drain Charge (Miller Charge) Q GD V DS = 48V, V GS = 10 VI D = 50A, (Note 4, 5)10 nC2. L=5.6mH, I AS=50A, V DD=25V, R G=0Ω, Starting T J=253. I SD≤50A, di/dt≤300A/µs, V DD≤BV DSS, Starting T J=254. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%5. Essentially independent of operating temperature.TEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS101010101010Drain -Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )On-State Characteristics101010Gate-Source Voltage , V GS (V)D r a i n C u r r e n t , I D (A )Transfer Characteristics0D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) (m Ω)Drain Current , I D (A)4080200100140On-Resistance Variation vs . Drain Current102101000.2Source-Drain Voltage , V SD (V)R e v e r s e D r a i n C u r r e n t , I S D (A )On State Current vs. Allowable CaseTemperature1.60.40.60.8 1.0 1.2 1.420601201601805Drain -Source Voltage, V DC (V)C a p a c i t a n c e (p F )Capacitance Characteristics1020G a t e -t o -S o u r c e V o l t a g e , V G S (V )Total Gate Charge , Q G (nC)81012Gate Charge Characteristics64015253035TYPICAL CHARACTERISTICS(Cont.)-100D r a i n -S o u r c e B r e a k d o w n V o l t a g e , B V D S S (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150Breakdown Voltage Variation vs . Junction, -5050100150On-Resistance Variation vs . 0Junction Temperature , T J (℃)101010Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D ,(A )Maximum Safe Operating1010D r a i n C u r r e n t , I D (A )Case Temperature, T C (℃)7510050Maximum Drain Current vs . Case Temperature 01255025102030401010101010Square Wave Pulse Duration , t 1 (sec)T h e r m a l R e s p o n s e , Z θJ C (t )1010101010101010101Transient Thermal。

BD6020GU中文资料

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

TC58NVG2S0HTAI0_datasheet_en_20130705

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS4 GBIT (512M × 8 BIT) CMOS NAND E2PROMDESCRIPTIONThe TC58NVG2S0HTAI0 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).The TC58NVG2S0HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.FEATURES•Organizationx8Memory cell array 4352 × 128K × 8× 8Register 4352Page size 4352 bytesBlock size (256K + 16K) bytes•ModesRead, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read•Mode controlSerial input/outputCommand control•Number of valid blocksMin 2008 blocksMax 2048 blocks•Power supplyV CC= 2.7V to 3.6V•Access timeCell array to register 25 µs maxSerial Read Cycle 25 ns min (CL=50pF)•Program/Erase timeAuto Page Program 300 µs/page typ.Auto Block Erase 2.5 ms/block typ.•Operating currentRead (25 ns cycle) 30 mA max.Program (avg.) 30 mA maxErase (avg.) 30 mA maxµA maxStandby 50•PackageTSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)•8 bit ECC for each 512Byte is required.PIN ASSIGNMENT (TOP VIEW)PIN NAMESNC NC NC NC I/O8I/O7I/O6I/O5NC NC NC V CC V SS NC NC NC I/O4I/O3I/O2I/O1NC NC NC NCNC NC NC NC NC NC BY/RY RE CE NC NC V CC V SS NC NC CLE ALE WE WP NC NC NC NC NC×8×8TC58NVG2S0HTAI0BLOCK DIAGRAMABSOLUTE MAXIMUM RATINGSSYMBOL RATING VALUE UNIT V CC Power Supply Voltage −0.6 to 4.6 V V IN Input Voltage −0.6 to 4.6V V I/O Input /Output Voltage −0.6 to V CC + 0.3 (≤ 4.6 V)V P D Power Dissipation0.3 W T SOLDER Soldering Temperature (10 s) 260 °C T STG Storage Temperature −55 to 150°C T OPROperating Temperature-40 to 85°CCAPACITANCE *(Ta = 25°C, f = 1 MHz)SYMB0L PARAMETER CONDITION MIN MAX UNIT C IN Input V IN = 0 V ⎯ 10 pF C OUT OutputV OUT = 0 V⎯10 pF* This parameter is periodically sampled and is not tested for every device.I/O1I/O8CEBY/RY toWPVALID BLOCKSMAXUNITTYP.SYMBOL PARAMETER MINN VB Number of Valid Blocks 2008 ⎯ 2048 BlocksNOTE: The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.The first block (Block 0) is guaranteed to be a valid block at the time of shipment.The specification for the minimum number of valid blocks is applicable over lifetimeThe number of valid blocks is on the basis of single plane operations, and this may be decreased with two planeoperations.RECOMMENDED DC OPERATING CONDITIONSUNITMAXTYP.SYMBOL PARAMETER MINV CC Power Supply Voltage 2.7 ⎯ 3.6 VV IH High Level input Voltage Vcc x 0.8 ⎯V CC+ 0.3 VV IL Low Level Input Voltage −0.3*⎯Vcc x 0.2 V*−2 V (pulse width lower than 20 ns)DC CHARACTERISTICS (Ta = -40 to 85 , V CC= 2.7 to 3.6V)AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (Ta = -40 to 85 , V CC= 2.7 to 3.6V)*1: tCLS and tALS can not be shorter than tWP*2: tCS should be longer than tWP + 8ns.AC TEST CONDITIONSCONDITIONPARAMETERV CC: 2.7 to 3.6VInput level V CC− 0.2 V, 0.2 VInput pulse rise and fall time 3 nsInput comparison level Vcc / 2Output data comparison level Vcc / 2Output load C L (50 pF) + 1 TTLRY pin.Note: Busy to ready time depends on the pull-up resistor tied to the BY/(Refer to Application Note (9) toward the end of this document.)PROGRAMMING AND ERASING CHARACTERISTICS(Ta = -40 to 85 , V CC= 2.7 to 3.6V)NOTESUNIT SYMBOL PARAMETER MINMAXTYP.t PROG Average Programming Time ⎯ 300 700 µs t DCBSYW1Data Cache Busy Time in Write Cache (following 11h)⎯ ⎯ 10µs t DCBSYW2Data Cache Busy Time in Write Cache (following 15h)⎯ ⎯ 700µs (2) N Number of Partial Program Cycles in the Same Page⎯⎯ 4 (1) t BERASE Block Erasing Time ⎯ 2.5 5 ms(1) Refer to Application Note (12) toward the end of this document.(2) t DCBSYW2 depends on the timing between internal programming time and data in time.Data OutputWhen tREH is long, output buffers are disabled by /RE=High, and the hold time of data output depend on tRHOH(25ns MIN). On this condition, waveforms look like normal serial read mode.When tREH is short, output buffers are not disabled by /RE=High, and the hold time of data output depend on tRLOH (5ns MIN). On this condition, output buffers are disabled by the rising edge of CLE,ALE,/CE or falling edge of /WE, and waveforms look like Extended Data Output Mode.TIMING DIAGRAMSLatch Timing Diagram for Command/Address/DataCommand Input Cycle Timing Diagram: V IH or V IL: V IH or V ILCE CLEWE ALEI/OAddress Input Cycle Timing DiagramData Input Cycle Timing Diagram: V IH or V ILCLECEALEI/OWE ALE CLE CESerial Read Cycle Timing DiagramStatus Read Cycle Timing DiagramCE BY /RY: V IH or V IL*: 70h represents the hexadecimal numberWE CE CLE RE BY /RY I/ORead Cycle Timing DiagramRead Cycle Timing Diagram: When Interrupted byCEI/O CLE CE ALE BY /RYI/O WE CLE CE ALE RE BY /RYI/OCLECEALEBY/RY Continues to of next page1CLECEBY/RY Continues from of previous page1I/O CLE CE ALE RE WE BY /RY Continues to of next page1I/OCLECEALEBY/RYContinues from of previous page1Data Output Timing DiagramI/O WE CLE CE ALERE BY /RYAuto-Program Operation Timing DiagramCLECE ALEBY/RY : V IH or V ILI/O: Do not input data while data is being output. *) M: up to 4351 (byte input data for ×8 device).Continues to 1 of next page: V IH or V IL: Do not input data while data is being output. Continues from 1 of previous pageContinues to 2 of next page(Note) Make sure to terminate the operation with 80h-10h- command sequence.If the operation is terminated by 80h-15h command sequence, monitor I/O 6 (Ready / Busy) by issuing Status Read command (70h) and make sure the previous page program operation is completed. If the page program operation is completed issue FFh reset before next operation.WE CLE CE ALE RE BY /RY I/O Continues from 2 of previous page program, the t PROG during cache programming is given by the following equation. t PROG = t PROG of the last page + t PROG of the previous page − AA = (command input cycle + address input cycle + data input cycle time of the last page) If “A” exceeds the t PROG of previous page, t PROG of the last page is t PROG max.Multi-Page Program Operation with Data Cache Timing Diagram (1/4)Continues to 1 of next page: V IH or V IL: Do not input data while data is being output. Continues to 2 of next pageContinues from 1 of previous pageContinues from 2 of previous pageContinues to 3 of next page(Note) Make sure to terminate the operation with 81h-10h- command sequence.If the operation is terminated by 81h-15h command sequence, monitor I/O 6 (Ready / Busy) by issuing Status Read command (70h) and make sure the previous page program operation is completed. If the page program operation is completed issue FFh reset before next operation.(*1) t PROG : Since the last page programming by 10h command is initiated after the previous cacheprogram, the t PROG during cache programming is given by the following equation. t PROG = t PROG of the last page + t PROG of the previous page − A A = (command input cycle + address input cycle + data input cycle time of the last page)If “A” exceeds the t PROG of previous page, t PROG of the last page is t PROG max.Continues from 3 of previous pageWE CLE CE ALE BY /RY I/OWECLECEALEREBY/RY : V IH or V IL: Do not input data while data is being output.command I/OCLECEALEBY/RY : V IH or V IL: Do not input data while data is being output.I/OID Read Operation Timing Diagram: V IH or V ILWECLERECEALEI/Ocommand00PIN FUNCTIONSThe device is a serial access memory which utilizes time-sharing input of address information.Command Latch Enable: CLEThe CLE input signal is used to control loading of the operation mode command into the internal command register. The command is latched into the command register from the I/O port on the rising edge of the WE signal while CLE is High.Address Latch Enable: ALEThe ALE signal is used to control loading address information into the internal address register. Addressinformation is latched into the address register from the I/O port on the rising edge of WE while ALE is High.Chip Enable:The device goes into a low-power Standby mode when CE goes High during the device is in Ready state. TheCE signal is ignored when device is in Busy state (BY /RY = L), such as during a Program or Erase or Read operation, and will not enter Standby mode even if the CE input goes High.Write Enable: The WE signal is used to control the acquisition of data from the I/O port.Read Enable: The RE signal controls serial data output. Data is available t REA after the falling edge of RE . The internal column address counter is also incremented (Address = Address + l) on this falling edge.I/O Port: I/O1 to 8The I/O1 to 8 pins are used as a port for transferring address, command and input/output data to and from the device.Write Protect: The WP signal is used to protect the device from accidental programming or erasing. The internal voltage regulator is reset when WP is Low. This signal is usually used for protecting the data during the power-on/off sequence when input signals are invalid.Ready/Busy: The BY /RY output signal is used to indicate the operating condition of the device. The BY /RY signal is in Busy state (BY /RY = L) during the Program, Erase and Read operations and will return to Ready state(BY /RY = H) after completion of the operation. The output buffer for this signal is an open drain and has to be pulled-up to Vccq with an appropriate resister.If BY /RY signal is not pulled-up to Vccq( “Open” state ), device operation can not guarantee.CE WEREWPBY/RYSchematic Cell Layout and Address AssignmentThe Program operation works on page units while the Erase operation works on block units.A page consists of 4352 bytes in which 4096 bytes are used for main memory storage and 256 bytes are for redundancy or for other uses.1 page = 4352 bytes1 block = 4352 bytes × 64 pages = (256K + 16K) bytes Capacity = 4352 bytes × 64pages × 2048 blocksAn address is read in via the I/O port over five consecutive clock cycles, as shown in Table 1.Table 1. AddressingI/O8I/O7 I/O6 I/O5I/O4I/O3I/O2I/O1First cycle CA7CA6 CA5 CA4CA3CA2CA1CA0Second cycle L L L CA12CA11CA10CA9CA8Third cycle PA7PA6PA5PA4PA3PA2PA1PA0CA0 to CA12: Column addressPA0 to PA16: Page addressPA6 to PA16: Block addressPA0 to PA5: NAND address in blockFourth cycle PA15PA14 PA13 PA12PA11PA10PA9PA8Fifth cycleL L L L L L L PA164352131072pages 2048 blocks 40964096 256256Page Buffer Data CacheI/O8I/O164 Pages =1 block8I/OOperation Mode: Logic and Command TablesThe operation modes such as Program, Erase, Read and Reset are controlled by command operations shown in Table 3. Address input, command input and data input/output are controlled by the CLE, ALE, CE, WE, RE and WP signals, as shown in Table 2.Table 2. Logic TableH: V IH, L: V IL, *: V IH or V IL*1: Refer to Application Note (10) toward the end of this document regarding the WP signal when Program or Erase Inhibit*2: If is low during read busy, WE and RE must be held High to avoid unintended command/address input to the device or read to device. Reset or Status Read command can be input during Read Busy.Table 3. Command table (HEX)First CycleSecond CycleAcceptable while BusySerial Data Input80⎯Read 00 30 Column Address Change in Serial Data Output 05 E0 Read with Data Cache31 ⎯ Read Start for Last Page in Read Cycle with Data Cache 3F ⎯Auto Page Program8010 Column Address Change in Serial Data Input 85 ⎯Auto Program with Data Cache801580 1181 15 Multi Page Program81 10Read for Page Copy (2) with Data Out00 3A Auto Program with Data Cache during Page Copy (2) 8C 15 Auto Program for last page during Page Copy (2) 8C 10 Auto Block Erase 60 D0ID Read 90 ⎯ Status Read70 ⎯ { Status Read for Multi-Page Program or Multi Block Erase71⎯{Reset FF ⎯ {Table 4. Read mode operation statesH: V IH , L: V ILHEX data bit assignment(Example)100000008765432I/O1Serial Data Input: 80hDEVICE OPERATIONRead ModeRead mode is set when the "00h" and “30h” commands are issued to the Command register. Between the two commands, a start address for the Read mode needs to be issued. After initial power on sequence, “00h” command is latched into the internal command register. Therefore read operation after power on sequence is executed by the setting of only five address cycles and “30h” command. Refer to the figures below for the sequence and the block diagram (Refer to the detailed timing chart.).Random Column Address Change in Read CycleBY/RY WERE CEStart-address inputA data transfer operation from the cell array to the Data Cache via Page Buffer starts on the rising edge of WE in the 30h command input cycle (after the address information has been latched). The device will be in the Busy state during this transfer period.After the transfer period, the device returns to Ready state. Serial data can be output synchronously with the RE clock from the start address designated in the address input cycle.NI/O1 to 8: m = 4351NBY/RY CLE CEALE During the serial data output from the Data Cache, the column address can be changed by inputting a new column address using the 05h and E0h commands. The data is read out in serial starting at the new column address. Random Column Address Change operation can be done multiple times within the same page.RE2013-07-05C32Read Operation with Read CacheThe device has a Read operation with Data Cache that enables the high speed read operation shown below. When the block address changes, this sequence has to be started from the beginning.Page N + 2If the 31h command is issued to the device, the data content of the next page is transferred to the Page Buffer during serial data out from the Data Cache, and therefore the tR (Data transfer from memory cell to data register) will be reduced.1 Normal read. Data is transferred from Page N to Data Cache through Page Buffer. During this time period, the device outputs Busy state for tR max.2 After the Ready/Busy returns to Ready, 31h command is issued and data is transferred to Data Cache from Page Buffer again. This data transfer takes tDCBSYR1 max and the completion of this timeperiod can be detected by Ready/Busy signal. 3 Data of Page N + 1 is transferred to Page Buffer from cell while the data of Page N in Data cache can be read out by /RE clock simultaneously.4 The 31h command makes data of Page N + 1 transfer to Data Cache from Page Buffer after the completion of the transfer from cell to Page Buffer. The device outputs Busy state for tDCBSYR1 max.. ThisBusy period depends on the combination of the internal data transfer time from cell to Page buffer and the serial data out time. 5 Data of Page N + 2 is transferred to Page Buffer from cell while the data of Page N + 1 in Data cache can be read out by /RE clock simultaneously6The 3Fh command makes the data of Page N + 2 transfer to the Data Cache from the Page Buffer after the completion of the transfer from cell to Page Buffer. The device outputs Busy state for tDCBSYR1max.. This Busy period depends on the combination of the internal data transfer time from cell to Page buffer and the serial data out time. 7 Data ofPage N + 2 in Data Cache can be read out, but since the 3Fh command does not transfer the data from the memory cell to Page Buffer, the device can accept new command input immediately afterthe completion of serial data out.BY/RY WE CE I/OData Cache Page BufferCell Array1217Page NPage N + 130h REMulti Page Read OperationThe device has a Multi Page Read operation and Multi Page Read with Data Cache operation.(1) Multi Page Read without Data CacheThe sequence of command and address input is shown below.Same page address (PA0 to PA5) within each district has to be selected.The data transfer operation from the cell array to the Data Cache via Page Buffer starts on the risingedge of WE in the 30h command input cycle (after the 2 Districts address information has been latched). The device will be in the Busy state during this transfer period. After the transfer period, the device returns to Ready state. Serial data can be output synchronously with the RE clock from the start address designated in the address input cycle. Selectedpage SelectedpageCommand BY /RY Command BY /RY Command(2) Multi Page Read with Data CacheWhen the block address changes (increments) this sequenced has to be started from the beginning. The sequence of command and address input is shown below.Same page address (PA0 to PA5) within each district has to be selected.CommandBY /RYCommandBY /RYCommand BY /RYCommand BY /RYCommand(3) Notes(a) Internal addressing in relation with the DistrictsTo use Multi Page Read operation, the internal addressing should be considered in relation with the District.•The device consists from 2 Districts.•Each District consists from 1024 erase blocks.•The allocation rule is follows.District 0: Block 0, Block 2, Block 4, Block 6,···, Block 2046District 1: Block 1, Block 3, Block 5, Block 7,···, Block 2047(b) Address input restriction for the Multi Page Read operationThere are following restrictions in using Multi Page Read;(Restriction)Maximum one block should be selected from each District.Same page address (PA0 to PA5) within two districts has to be selected.For example;(60) [District 0, Page Address 0x00000] (60) [District 1, Page Address 0x00040] (30)(60) [District 0, Page Address 0x00001] (60) [District 1, Page Address 0x00041] (30)(Acceptance)There is no order limitation of the District for the address input.For example, following operation is accepted;(60) [District 0] (60) [District 1] (30)(60) [District 1] (60) [District 0] (30)It requires no mutual address relation between the selected blocks from each District.(c)WP signalMake sure WP is held to High level when Multi Page Read operation is performedAuto Page Program OperationThe device carries out an Automatic Page Program operation when it receives a "10h" Program command after the address and data have been input. The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.)Random Column Address Change in Auto Page Program OperationThe column address can be changed by the 85h command during the data input sequence of the Auto Page Program operation.Two address input cycles after the 85h command are recognized as a new column address for the data input. After the new data is input to the new column address, the 10h command initiates the actual data program into theselected page automatically. The Random Column Address Change operation can be repeated multiple times within the same page.Page NCol. MCol. M’BusyData inputpageThe data is transferred (programmed) from the Data Cache via the Page Buffer to the selected page on the rising edge of WE following input of the “10h” command. After programming, the programmed data is transferred back to the Page Buffer to be automatically verified by the device. If the programming does not succeed, the Program/Verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached.Data inputCLEALEI/OCEWE RE BYRY/2013-07-05C37Multi Page ProgramThe device has a Multi Page Program, which enables even higher speed program operation compared to Auto Page Program. The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.)Although two planes are programmed simultaneously, pass/fail is not available for each page by "70h" command when the program operation completes. Status bit of I/O 1 is set to “1” when any of the pages fails. Limitation in addressing with Multi Page Program is shown below.Multi Page ProgramNOTE: Any command between 11h and 81h is prohibited except 70h and FFh.DataI/O1~8PassFailPA6 : District0’ PA7~PA16 : Valid’ PA6 : District1 PA7~PA16 : ValidBY /RY2013-07-05C38Auto Page Program Operation with Data CacheThe device has an Auto Page Program with Data Cache operation enabling the high speed program operation shown below. When the block address changes this sequenced has to be started from the beginning.BY /RYCLE ALE I/OCEIssuing the 15h command to the device after serial data input initiates the program operation with Data Cache1 Data for Page N is input to Data Cache.2 Data is transferred to the Page Buffer by the 15h command. During the transfer the Ready/Busy outputs Busy State (t DCBSYW2).3 Data is programmed to the selected page while the data for page N + 1 is input to the Data Cache.4 By the 15h command, the data in the Data Cache is transferred to the Page Buffer after the programming of page N is completed. The device output busy state from the 15h commanduntil the Data Cache becomes empty. The duration of this period depends on timing between the internal programming of page N and serial data input for Page N + 1 (t DCBSYW2). 5 Data for Page N + P is input to the Data Cache while the data of the Page N + P − 1 is being programmed.6 The programming with Data Cache is terminated by the 10h command. When the device becomes Ready, it shows that the internal programming of the Page N + P is completed.NOTE: Since the last page programming by the 10h command is initiated after the previous cache program, the tPROG during cache programming is given by the following;t PROG = t PROG for the last page + t PROG of the previous page − ( command input cycle + address input cycle + data input cycle time of the last page)RE2013-07-05C39Pass/fail status for each page programmed by the Auto Page Programming with Data Cache operation can be detected by the Status Read operation.z I/O1 : Pass/fail of the current page program operation. z I/O2 : Pass/fail of the previous page program operation.The Pass/Fail status on I/O1 and I/O2 are valid under the following conditions.z Status on I/O1: Page Buffer Ready/Busy is Ready State.The Page Buffer Ready/Busy is output on I/O6 by Status Read operation or BY /RY pin after the 10h commandz Status on I/O2: Data Cache Read/Busy is Ready State.The Data Cache Ready/Busy is output on I/O7 by Status Read operation or BY /RY pin after the 15h command.Data Cache BusyPage Buffer BusyIf the Page Buffer Busy returns to Ready before the next 80h command input, and if Status Read is done during this Ready period, the Status Read provides pass/fail for Page 2 on I/O1 and pass/fail result for Page1 on I/O2Example)BY RY/ pinMulti Page Program with Data CacheThe device has a Multi Page Program with Data Cache operation, which enables even higher speed program operation compared to Auto Page Program with Data Cache as shown below. When the block address changes (increments) this sequenced has to be started from the beginning.The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.)After “15h” or “10h” Program command is input to device, physical programing starts as follows. For details of Auto Program with Data Cache, refer to “Auto Page Program with Data Cache”.The data is transferred (programmed) from the page buffer to the selected page on the rising edge of /WE following input of the “15h” or “10h” command. After programming, the programmed data istransferred back to the register to be automatically verified by the device. If the programming does not succeed, the Program/Verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached.Selected pageData inputcommand for multi-pageprogram Data input commandDummy Program Data input command Program with Data CacheDummy Program Auto Page Program Data input command for multi-pageprogramStarting the above operation from 1st page of the selected erase blocks, and then repeating the operation total 64 times with incrementing the page address in the blocks, and then input the last page data of the blocks, “10h” command executes final programming. Make sure to terminate with 81h-10h- command sequence.In this full sequence, the command sequence is following.The 71h command Status description is as below.STATUS OUTPUT I/O1Chip Status1 : Pass/FailPass: 0Fail: 1I/O2 District 0 Chip Status1 : Pass/Fail Pass: 0 Fail: 1I/O3 District 1 Chip Status1 : Pass/Fail Pass: 0 Fail: 1 I/O4 District 0 Chip Status2 : Pass/Fail Pass: 0 Fail: 1I/O5 District 1 Chip Status2 : Pass/Fail Pass: 0 Fail: 1 I/O6 Ready/Busy Ready: 1 Busy: 0I/O7 Data Cache Ready/BusyReady: 1 Busy: 0 I/O8Write ProtectProtect: 0Not Protect: 1I/O1 describes Pass/Fail condition ofdistrict 0 and 1(OR data of I/O2 and I/O3). If one of the districts fails during multipage program operation, it shows “Fail”.I/O2 to 5 shows the Pass/Fail condition ofeach district. For details on “Chip Status1”and “Chip Status2”, refer to section“Status Read”.1st63th64thInternal addressing in relation with the DistrictsTo use Multi Page Program operation, the internal addressing should be considered in relation with the District.•The device consists from 2 Districts.•Each District consists from 1024 erase blocks.•The allocation rule is follows.District 0: Block 0, Block 2, Block 4, Block 6,···, Block 2046District 1: Block 1, Block 3, Block 5, Block 7,···, Block 2047Address input restriction for the Multi Page Program with Data Cache operationThere are following restrictions in using Multi Page Program with Data Cache;(Restriction)Maximum one block should be selected from each District.Same page address (PA0 to PA5) within two districts has to be selected.For example;(80) [District 0, Page Address 0x00000] (11) (81) [District 1, Page Address 0x00040] (15 or 10)(80) [District 0, Page Address 0x00001] (11) (81) [District 1, Page Address 0x00041] (15 or 10) (Acceptance)There is no order limitation of the District for the address input.For example, following operation is accepted;(80) [District 0] (11) (81) [District 1] (15 or 10)(80) [District 1] (11) (81) [District 0] (15 or 10)It requires no mutual address relation between the selected blocks from each District.Operating restriction during the Multi Page Program with Data Cache operation(Restriction)The operation has to be terminated with “10h” command.Once the operation is started, no commands other than the commands shown in the timing diagram is allowed to be input except for Status Read command and reset command.。

中科曙光系列

中科曙光机架式服务器型号：I420-G10处理器：支持Intel Xeon E5-2400系列多核处理器，高速QPI 互连总线(8.0/7.2/6.4 GT/s，依CPU 型号不同而不同)，大容量三级缓存(10/15/20 MB，依CPU 型号不同而不同)芯片组：Intel C602 芯片组内存：8 根内存插槽支持DDR3 1600/1333/1066 ECC 内存(工作频率依CPU 和内存配置不同而不同) 最大可扩展至256GB 内存网络控制器：集成Intel 双千兆网卡，支持网络唤醒，网络冗余，负载均衡等网络特性PCI I/O 扩展槽：2 根PCI-E 3.0 ×162 根PCI-E 3.0 ×81 个PCI 32bit 插槽注意:一颗CPU 时1 根PCI-E 3.0 x161 根PCI-E 3.0 x81 个PCI 32bit 插槽硬盘：可选Upgrade ROM5 支持SAS 硬盘，支持RAID 0、1、10可选八口SAS RAID 卡，支持RAID 0/1/5/6系统最大支持12 个热插拔3.5/2.5 寸SAS/SATA 硬盘其他端口：2 个RJ-45 网络接口，位于机箱后部1 个RJ-45 管理接口，位于机箱后部12 盘位机型：5 个USB 2.0 接口，4 个位于机箱后部、1 个位于机箱前部8 盘位机型：7 个USB 2.0 接口，4 个位于机箱后部、3 个位于机箱前部1 个VGA 接口，位于机箱后部1 个串口，位于机箱后部电源：可配置单电源，1+1 冗余电源散热：机箱中部3 个系统风扇显卡：集成显示控制器，16MB 显存支持操作系：Windows Server 2008 Enterprise Edition R2 SP1 64bitRed hat Enterprise Linux 6.2 for Intel EM64TSuSE Linux Enterprise Server 11 SP2 for Intel EM64T中标麒麟高级服务器操作系统V6.0 x86-64中标麒麟通用服务器操作系统V6.0 x86-64操作系统的详细支持情况，请参考《产品兼容性列表》电源电压：200-240V/50Hz机箱：2U 机架式服务器机箱机箱尺寸：87mm(高)x 425mm(宽)x685mm(深)重量：最大35 千克（不含导轨）环境温度要求：工作时10℃～35℃(50℉～95℉)存储-40℃～55℃(-40℉～131℉)相对湿度要求：工作时最大相对湿度90％RH（40℃）工作时35％～80％RH运输存储20％～93％RH振动：频率5Hz～150Hz 加速度≤20m/s2 ,振幅≤0.15mm 冲击：峰值加速度150m/s2～300m/s2,持续时间≤11ms 碰撞：峰值加速度100m/s2～150m/s2,次数1000以内型号：A420r-G处理器支持AMD Opteron 4100/4200系列多核处理器，HT3.0直连架构(6.4/GT/s)，4100 系列6MB L3 缓存，4200系列8MB L3缓存芯片组AMD SR5670+SP5100芯片组内存8 个内存插槽支持DDR3 1600/1333/1066MHz RDIMM/UDIMM 内存最高可支持128GB 内存(RDIMM)或32GB 内存(UDIMM)网络控制器集成Intel 82574L双千兆网卡，支持网络唤醒，网络冗余，负载均衡等网络特性集成独立管理网卡PCI I/O 扩展槽1 个PCI-E2.0 x16 扩展插槽（运行在X16速率下）1 个PCI-E2.0 X16扩展插槽（运行在X8 速率下）1 个PCIE2.0 X8插槽（运行在X4 速率下)3 个32bit PCI 33MHz1 个专用SAS卡插槽硬盘主板集成SATA RAID 控制器，可支持4 块SATA 硬盘实现HostRAID 0/1/5/10可选八口SAS 卡，支持RAID 0/1/10/1E可选八口SAS RAID 卡，支持RAID 0/1/5/6存储最大支持8 块3.5寸或2.5 寸热插拔SAS/SATA 硬盘，支持SAS/SATA硬盘混插其他端口2 个RJ-45网络接口，位于机箱后部1 个RJ-45管理接口，位于机箱后部4 个USB 2.0 接口，2 个位于机箱后部、2个位于机箱前部1 个VGA接口，位于机箱后部1个串口，位于机箱后部1 组PS/2 键盘鼠标接口，位于机箱后部电源2U 650W单电源，可选750W 1+1 冗余电源散热3 个系统风扇显卡Aspeed 2050 集成显示芯片（8MB缓存）支持操作系统Windows Server 2008 SP2 SP1 64bitWindows Server 2003 R2 32bit/64bitWindows Server 2003 R2 SP2 32bit/64bit Redhat Enterprise Linux6U2 64bitSuSE Linux Enterprise Server 11SP1 64bit中标麒麟高级服务器操作系统V6.0 x86-64中标麒麟通用服务器操作系统V6.0 x86-64电源电压220V/50Hz机箱2U机架式服务器机箱机箱尺寸87mm(高)x 425mm(宽)x685mm(深)重量满配约35千克环境温度要求工作时10°C~35°C(50°F~95°F)存储-40°C~55°C(-40°F~131°F)相对湿度要求工作时最大相对湿度90%RH(40°C)工作时35%~80% RH运输存储20%~93% RH振动频率5Hz~150Hz 加速度≤20m/s2 ,振幅≤0.15mm 冲击峰值加速度150m/s2~300m/s2,持续时间≤11ms 碰撞峰值加速度100m/s2~150m/s2,次数1000以内型号：A620r-G处理器支持AMD Opteron 6100、6200系列多核处理器，HT3.0直连架构(6.4/GT/s)，16MB L3 缓存芯片组AMD SP5100 高性能芯片组内存16 根内存插槽支持DDR3 1600/1333M/1066Hz RDIMM/UDIMM内存最高可支持256GB 内存(RDIMM)网络控制器集成Intel 双千兆高性能网卡，支持网络唤醒，网络冗余，负载均衡等网络特性PCI I/O 扩展槽4 个PCI-E2.0 扩展插槽1 个32bit PCI 33MHz1 个专用SAS卡插槽硬盘可选主板集成SATA 控制器，最大支持4块SATA 硬盘，支持HostRAID 0/1/10/5 可选SAS 卡，支持RAID 0/1/10 /1E可选SAS RAID 卡，支持RAID 0/1/5/6存储最大支持12 个热插拔SAS/SATA 硬盘其他端口2 个RJ-45网络接口，位于机箱后部1 个RJ-45管理接口，位于机箱后部12 盘位机型：3个USB 2.0 接口，2个位于机箱后部、1 个位于机箱前部8 盘位机型：5个USB 2.0 接口，2个位于机箱后部、3 个位于机箱前部1 个VGA接口，位于机箱后部1 个串口，位于机箱后部1 组PS/2 键盘鼠标接口，位于机箱后部电源2U 650W单电源，可选700W 1+1 冗余电源散热3 个系统风扇显卡Aspeed 2050 集成显示芯片（8MB缓存）支持操作系统Windows Server 2008 SP2 SP1 64bitWindows Server 2003 R2 32bit/64bitWindows Server 2003 R2 SP2 32bit/64bitRedhat Enterprise Linux6U2 64bitSuSE Linux Enterprise Server 11SP1 64bit中标麒麟高级服务器操作系统V6.0 x86-64中标麒麟通用服务器操作系统V6.0 x86-64操作系统的详细支持情况，请参考《产品兼容性列表》电源电压220V/50Hz机箱2U机架式服务器机箱机箱尺寸87mm(高)x 425mm(宽)x685mm(深)重量满配约35千克环境温度要求工作时10°C~35°C(50°F~95°F)存储-40°C~55°C(-40°F~131°F)相对湿度要求工作时最大相对湿度90%RH(40°C)工作时35%~80% RH运输存储20%~93% RH振动频率5Hz~150Hz 加速度≤20m/s2 ,振幅≤0.15mm冲击峰值加速度150m/s2~300m/s2,持续时间≤11ms碰撞峰值加速度100m/s2~150m/s2,次数1000次以内型号：A840r-G处理器最大支持4 颗AMD Opteron 6100系列、6200系列多核处理器，HT3.0直连架构(6.4/GT/s)芯片组AMD SR5690+SP5100芯片组内存32 个内存插槽最大可支持DDR3 1600MHz RDIMM内存最高可支持512GB 内存网络控制器集成Intel 82576双千兆网卡，支持网络唤醒，网络冗余，负载均衡等网络特性集成Intel 82574L 千兆网卡，除常规网口功能外，同时提供IPMI 远程访问功能PCI I/O 扩展槽1 个PCI-E2.0 x16 扩展插槽（与相邻X8槽复用，可运行在X16速率下）1 个PCI-E2.0 x16 扩展插槽（与相邻X8槽复用，可运行在X16速率下）2 个PCIE-2.0 X8插槽（运行在X8 速率下）存储最大支持10 块热插拔2.5 寸SAS或SATA硬盘集成1 个SATA 接口集成8 口6Gbps SAS 2.0硬盘控制器，支持RAID 0/1/1E/10可选八口SAS RAID 卡，支持RAID 0/1/5/6其他端口2 个RJ-45网络接口，位于机箱后部1 个RJ-45管理接口，位于机箱后部7 个USB 2.0 接口，2 个位于机箱后部、4个位于机箱前部、1 个位于机箱内部1 个VGA接口，位于机箱后部1 个串口，位于机箱后部1 组PS/2 键盘鼠标接口，位于机箱后部电源单个模块1000W （最大可选4 个模块）散热3 组（6 个）热拔插冗余风扇模块显卡Aspeed 2050 集成显示芯片（8MB缓存）支持操作系统Windows Server 2008 SP2 SP1 64bitRedhat Enterprise Linux6U2 64bitSuSE Linux Enterprise Server 11SP1 64bit VMware vSphere 5.0中标麒麟高级服务器操作系统V6.0 x86-64中标麒麟通用服务器操作系统V6.0 x86-64更详细信息请参照操作系统兼容性列表电源电压220V/50Hz机箱4U机架式服务器机箱机箱尺寸高176mm；宽448mm；深712mm重量满配约50千克环境温度要求工作时10°C~35°C(50°F~95°F)存储-40°C~55°C(-40°F~131°F)相对湿度要求工作时最大相对湿度90%RH(40°C)工作时35%~80% RH运输存储20%~93% RH振动频率5Hz~150Hz 加速度≤20m/s2 ,振幅≤0.15mm 冲击峰值加速度150m/s2~300m/s2,持续时间≤11ms 碰撞峰值加速度100m/s2~150m/s2,次数1000 次内型号：I210r-G处理器支持Intel Xeon E3-1200 系列多核处理器，5 GT/s 高速DMI 总线，大容量三级缓存(8/6 MB，依CPU 型号不同而不同)；支持Intel Core i3-2100 系列双核处理器；芯片组Intel C204 芯片组内存4 根内存插槽支持DDR3 1333/1066/800 ECC Unbuffered 内存最大可扩展至32GB 内存网络控制器集成Intel 82574L 双千兆网卡，支持网络唤醒，网络冗余，负载均衡等网络特性PCI I/O 扩展槽支持一个PCI-E2.0 x16 扩展槽，支持全高半长扩展卡硬盘控制器6 个SATA 接口，其中2 个SATA 6Gb 接口系统最大支持 2 个 3.5 寸SATA 硬盘其他端口2 个RJ-45网络接口，位于机箱后部1 个RJ-45管理接口，位于机箱后部4 个USB 2.0 接口，2 个位于机箱后部、2 个位于机箱前部1 个VGA接口，位于机箱后部1 个串口，位于机箱后部1 组PS/2 键盘鼠标接口，位于机箱后部电源1U 单电源散热2 个系统风扇显卡集成显示控制器支持操作系统Windows Server 2008 Enterprise Edition 32bit/64bitWindows Server 2003 Enterprise Edition SP2 32bit/64bitRed hat Enterprise Linux 6 for Intel EM64TRed hat Enterprise Linux 5.5 for Intel EM64TSuSE Linux Enterprise Server 11 SP1 for Intel EM64T电源电压220V/50Hz机箱1U 机架式服务器机箱机箱尺寸380mm x 430mm x 43.4mm重量最大6.5 千克（不含导轨）环境温度要求工作时10°C~35°C(50°F~95°F)存储-40°C~55°C(-40°F~131°F)相对湿度要求工作时最大相对湿度90%RH(40°C)工作时35%~80% RH运输存储20%~93% RH振动频率5Hz~150Hz 加速度≤20m/s2 ,振幅≤0.15mm 冲击峰值加速度150m/s2~300m/s2,持续时间≤11ms 碰撞峰值加速度100m/s2~150m/s2,次数1000 次内型号：I410-G10处理器支持Intel Xeon E5-2400系列多核处理器，高速QPI互连总线(8.0/7.2/6.4 GT/s，依CPU型号不同而不同)大容量三级缓存(10/15/20 MB，依CPU型号不同而不同)；芯片组Intel C602芯片组内存8根内存插槽支持DDR3 1600/1333/1066 ECC内存(工作频率依CPU和内存配置不同而不同)，最大可扩展至256GB内存网络控制器集成Intel双千兆网卡，支持网络唤醒，网络冗余，负载均衡等网络特性PCI I/O扩展槽1根PCI-E 3.0 ×16硬盘控制器可选Upgrade ROM5支持SAS硬盘，支持RAID 0、1、10可选八口SAS RAID卡，支持RAID 0/1/5/6系统最大支持4个热插拔3.5/2.5寸SAS/SATA硬盘其他端口2个RJ-45网络接口，位于机箱后部1个RJ-45管理接口，位于机箱后部6个USB 2.0接口，4个位于机箱后部、2个位于机箱前部1个VGA接口，位于机箱后部1个串口，位于机箱后部电源520W单电源散热机箱中部5个系统风扇管理功能集成BMC芯片，支持IPMI2.0和KVM Over IP高级管理功能显卡集成显示控制器，16MB显存支持操作系统Windows Server 2008 Enterprise Edition R2 SP1 64bitRed hat Enterprise Linux 6.2 for Intel EM64TSuSE Linux Enterprise Server 11 SP2 for Intel EM64T电源电压200-240V/50Hz机箱1U机架式服务器机箱机箱尺寸长：503mm X 宽:437mm X 高：43mm重量最大20千克（不含导轨）环境温度要求工作时10℃～35℃(50℉～95℉)存储-40℃～55℃(-40℉～131℉)相对湿度要求工作时最大相对湿度90％RH（40℃）工作时35％～80％RH运输存储20％～93％RH振动频率5Hz～150Hz加速度≤20m/s2 ,振幅≤0.15mm 冲击峰值加速度150m/s2～300m/s2,持续时间≤11ms 碰撞峰值加速度100m/s2～150m/s2,次数1000次内型号：I620-G15处理器支持Intel Xeon E5-2600 系列多核处理器，高速QPI 互连总线(8.0/7.2/6.4 GT/s，依CPU 型号不同而不同)，大容量三级缓存(10/15/20 MB，依CPU 型号不同而不同)；芯片组Intel C602 芯片组内存支持DDR3 1600/1333/1066 ECC 内存(工作频率依CPU 和内存配置不同而不同) 网络控制器集成Intel I350 双千兆网卡，支持网络唤醒，网络冗余，负载均衡等网络特性PCI I/O 扩展槽2 根PCI-E 3.0 ×164 根PCI-E 3.0 ×8PCI-E 扩展槽为横插卡设计，支持全高扩展卡硬盘控制器集成8 口SAS 硬盘控制器，支持RAID 0、1、10可选八口SAS RAID 卡，支持RAID 0/1/5/6系统最大支持8 个热插拔 3.5 寸/16 个2.5 寸SAS/SATA 硬盘内部可支持两块非热插拔SSD 硬盘其他端口2 个RJ-45网络接口，位于机箱后部1 个RJ-45管理接口，位于机箱后部4 个USB 2.0 接口，2 个位于机箱后部、2 个位于机箱前部1 个VGA接口，位于机箱后部1 个串口，位于机箱后部电源可配置单电源，1+1 冗余电源散热机箱中部4 个/7 个系统热插拔风扇管理功能集成BMC 芯片，支持IPMI2.0 和KVM Over IP 高级管理功能显卡集成显示控制器，16MB 显存支持操作系统Windows Server 2008 Enterprise Edition R2 SP164bitRed hat Enterprise Linux 6.2 for Intel EM64TRed hat Enterprise Linux 6.3 for Intel EM64T SuSE Linux Enterprise Server 11 SP2 for Intel EM64T 电源电压200-240V/50Hz机箱2U机架式服务器机箱机箱尺寸87.8mm(高)x 432mm(宽)x732.6mm(深)重量最大35 千克（不含导轨）环境温度要求工作时10°C~35°C(50°F~95°F)存储-40°C~55°C(-40°F~131°F)相对湿度要求工作时最大相对湿度90%RH(40°C)工作时35%~80% RH运输存储20%~93% RH振动频率5Hz~150Hz 加速度≤20m/s2 ,振幅≤0.15mm 冲击峰值加速度150m/s2~300m/s2,持续时间≤11ms 碰撞峰值加速度100m/s2~150m/s2,次数1000 次内型号：I620-G10处理器支持Intel Xeon E5-2600 系列多核处理器，高速QPI 互连总线(8.0/7.2/6.4 GT /s，依CPU型号不同而不同)，大容量三级缓存(10/15/20 MB，依CPU型号不同而不同)；芯片组Intel C606 芯片组内存支持DDR3 1600/1333/1066 ECC 内存(工作频率依CPU 和内存配置不同而不同) 网络控制器集成Intel I350 双千兆网卡，支持网络唤醒，网络冗余，负载均衡等网络特性PCI I/O 扩展槽3 根PCI-E 3.0 ×163 根PCI-E 3.0 ×8配置1 颗处理器时,仅支持1根PCI-E 3.0 ×16, 2 根PCI-E 3.0 ×8硬盘控制器集成8 口SAS 硬盘控制器，支持RAID 0、1、10可选八口SAS RAID 卡，支持RAID 0/1/5/6系统最大支持12 个热插拔3.5/2.5 寸SAS/SATA 硬盘其他端口2 个RJ-45网络接口，位于机箱后部1 个RJ-45管理接口，位于机箱后部12 盘位机型：5个USB 2.0 接口，4个位于机箱后部、1 个位于机箱前部8 盘位机型：7个USB 2.0 接口，4个位于机箱后部、3 个位于机箱前部1 个VGA接口，位于机箱后部1 个串口，位于机箱后部电源可配置单电源，1+1 冗余电源散热机箱中部3 个系统风扇管理功能集成BMC芯片，支持IPMI2.0 和KVM Over IP高级管理功能显卡集成显示控制器，16MB显存支持操作系统Windows Server 2008 Enterprise Edition SP2 32bit/64bitWindows Server 2008 Enterprise Edition R2 SP164bitRed hat Enterprise Linux 6.0 for Intel EM64TRed hat Enterprise Linux 6.1 for Intel EM64TRed hat Enterprise Linux 6.2 for Intel EM64T SuSE Linux Enterprise Server 11 SP1 for Intel EM64T SuSE Linux Enterprise Server 11 SP2 for Intel EM64T 中标麒麟高级服务器操作系统V6.0 x86-64中标麒麟通用服务器操作系统V6.0 x86-64电源电压200-240V/50Hz机箱2U机架式服务器机箱机箱尺寸87mm(高)x 425mm(宽)x685mm(深)重量最大35 千克（不含导轨）环境温度要求工作时10°C~35°C(50°F~95°F)存储-40°C~55°C(-40°F~131°F)相对湿度要求工作时最大相对湿度90%RH(40°C)工作时35%~80% RH运输存储20%~93% RH振动频率5Hz~150Hz 加速度≤20m/s2 ,振幅≤0.15mm 冲击峰值加速度150m/s2~300m/s2,持续时间≤11ms 碰撞峰值加速度100m/s2~150m/s2,次数1000 次内型号：I840-G10处理器支持Intel Xeon E5-4600系列多核处理器，高速QPI互连总线(8.0/7.2/6.4 GT/s，依CPU型号不同而不同)大容量三级缓存(10/15/20 MB，依CPU型号不同而不同)；芯片组Intel C602芯片组内存32根内存插槽最大可支持DDR3 1600MHz RDIMM 内存，最大可扩展至1024GB内存网络控制器集成Intel I350 双千兆网卡，支持网络唤醒，网络冗余，负载均衡等网络特性集成独立管理网口功能，提供IPMI 远程访问功能PCI I/O扩展槽2 个PCI-E3.0 x16 扩展插槽2 个PCI-E3.0 X16 插槽（运行在X8 速率下）注:两颗CPU 的配置时,仅有1 个PCIE3.0 x16 和1 个PCIE3.0 x8 可用硬盘控制器最大支持8 块热插拔2.5 寸SAS 或SATA 硬盘集成6 个SATA 接口可选八口SAS RAID 卡，支持RAID 0/1/5/6其他端口2个RJ-45网络接口，位于机箱后部1个RJ-45管理接口，位于机箱后部6个USB 2.0接口，4个位于机箱后部、2个位于机箱前部1个VGA接口，位于机箱后部1个串口，位于机箱后部电源单个模块1000W （最大可选4 个模块）散热3 组（6 个）热拔插冗余风扇模块显卡Matrox MGA200 集成显示芯片（16MB 缓存）支持操作系统Windows Server 2008 R2 SP1 64bitRedHat Enterprise Linux 6U2 64bitSUSE Linux Enterprise Server 11 SP2 64bit电源电压200V/50Hz机箱4U机架式服务器机箱机箱尺寸高176mm；宽448mm；深712mm重量满配约50 千克环境温度要求工作时10℃～35℃(50℉～95℉)存储-40℃～55℃(-40℉～131℉)相对湿度要求工作时最大相对湿度90％RH（40℃）工作时35％～80％RH运输存储20％～93％RH振动频率5Hz～150Hz加速度≤20m/s2 ,振幅≤0.15mm 冲击峰值加速度150m/s2～300m/s2,持续时间≤11ms 碰撞峰值加速度100m/s2～150m/s2,次数1000次内型号：I840r-GP处理器多核英特尔®至强™处理器7500/E7 系列，四核、六核、八核芯片组Intel® 7500芯片组+ICH10R内存最大8 个内存扩展板，每扩展板8 个内存插槽；支持DDR3 REG 内存，最大可扩展至2048GB 内存支持内存保护：支持内存镜像、内存热备、内存热插拔网络控制器集成双Intel 82576四口千兆网卡，支持网络唤醒，网络冗余，负载均衡等网络特性PCI I/O 扩展槽11个PCI-E插槽，其中4个PCIE2.0x8（支持热插拔），3个PCIE2.0x4，1个PCIE2.0x16，2 个PCIE1.0x4，1 个PCIE2.0x8（为专用6Gb raid 卡预留）硬盘控制器8 口SAS 6Gb 控制器，可支持RAID 0,1,5,6,10,50,60等RAID 级别，并可选电池系统最大支持8 个热插拔SAS/SATA 硬盘其他端口3 个前置USB接口，2 个后置USB接口1 个后置串口，4 个后置RJ45 网络接口1 个前置VGA 接口，1个后置VGA 接口电源可选2-4 个850W高效电源模块，支持2+2或者3+1冗余散热热插拔系统风扇，可支持7+1 冗余显卡集成显示控制器，32MB显存支持操作系统Windows Server 2008 Enterprise Edition 32bit/64bitRed hat Enterprise Linux 5.5 for Intel EM64TRed hat Enterprise Linux 4.8 for Intel EM64TSuSE Linux Enterprise Server 11 SP1 for Intel EM64T中标麒麟高级服务器操作系统V6.0 x86-64中标麒麟通用服务器操作系统V6.0 x86-64具体请参照曙光公司服务器兼容性列表或咨询曙光公司销售代表电源电压：220V/50Hz机箱尺寸4U：424mm(宽)x 173.8mm(高)x704mm(深)重量最大50 千克（不含导轨）环境温度要求工作时10°C~35°C(50°F~95°F)存储-40°C~55°C(-40°F~131°F)相对湿度要求工作时最大相对湿度90%RH(40°C)工作时35%~80% RH运输存储20%~93% RH振动频率5Hz~150Hz 加速度≤20m/s2 ,振幅≤0.15mm 冲击峰值加速度150m/s2~300m/s2,持续时间≤11ms 碰撞峰值加速度100m/s2~150m/s2,次数1000 次内I950r-G处理器最大支持8 颗Intel Xeon 7500/E7 系列高端处理器内存特性支持DDR3 ECC Registered 内存外设DVD ROM/RW网络控制器集成intel82576 双千兆网卡硬盘控制器最多支持16 个2.5寸SATA 或SAS硬盘可选SAS Raid 卡，支持Raid 0/1/5/6/10/50/60可选SAS 卡，支持RAID 0/1/10外设接口1 个VGA接口（后置）4 个USB2.0 接口(前面2 个，后面2 个)2 个RJ45网口（后置）1 个COM口（后置）1 个管理网口（后置）散热热插拔系统风扇，可支持7+1 冗余显示系统集成图形控制器支持操作系统Windows Server 2008 32bit/64bitRed hat Enterprise Linux 5.5 32bit/64bitSuSE Linux 11Enterprise Server 64bit中标麒麟高级服务器操作系统V6.0 x86-64中标麒麟通用服务器操作系统V6.0 x86-64操作系统兼容性和系统配置有很大关系，更多信息请咨询曙光公司销售代表或者曙光公司客户服务热线机箱5U机架式机箱电源电压2800W 2+2 金牌冗余电源机箱尺寸220mm(高)×425mm(宽)×680mm(深)（机架式）重量50KG(满配，不含导轨、托轨)环境温度要求工作时10°C~35°C(50°F~95°F)存储-40°C~55°C(-40°F~131°F)相对湿度要求工作时最大相对湿度90%RH(40°C)工作时35%~80% RH运输存储20%~93% RH振动频率5Hz~150Hz 加速度≤20m/s2 ,振幅≤0.15mm 冲击峰值加速度150m/s2~300m/s2,持续时间≤11ms 碰撞峰值加速度100m/s2~150m/s2,次数1000 次内中科曙光刀片服务器型号TC4600刀片服务器刀片机箱外形特征5U 标准刀箱高度;计算刀片最多14 个计算刀片,提供基于intel Xeon Romley-EP 平台计算刀片供选择;IB 交换网络机箱对外可提供14 个56Gbps 的FDR Infiniband 接口;满足56Gb./s 全线速连接需求;千兆以太网交换网络刀箱对外提供千兆网络配置:(1)配置一:2 *千兆交换模块;此千兆交换模块对外至少提供 6 个RJ45 千兆接口;(2)配置二:1 *千兆交换+1 *直通模块此千兆交换模块对外提供 6 个RJ45 千兆接口或提供可选(带万兆上联: 2*万兆端口+6 千兆口);此千兆直通模块对外提供14 个RJ45 千兆接口;IO 扩展刀箱可支持4节点8块GPU的扩展方式为每一个计算刀片提供两个PCI-E3.0 x16 扩展插槽(提供支持 2 块GPU)可支持两块GPU 卡,卡的类型: NVIDIA Tesla:M2070Q,M2090;电源模块最多配置 4 个具有负载均衡和故障切换功能的热插拔2000W 交流电源模块,可以提供N+1 或N+N 电源冗余配置;散热模块标配4 个带线性预补偿功能的智能冗余风扇;管理模块可实现远程虚拟介质、远程KVM、刀片状态、故障定位、开关机等全方位管理控制监视功能;配套介质可选1 个外置USB DVD-RW; 1 个USB Hub;光学通路状态指示OPSI刀片机箱、刀片、电源、KVM、USB、IB 网络,千兆网络、高级管理模块、硬盘驱动器;外部存储器：支持主流存储解决方案(所有曙光公司存储产品)和非曙光公司的存储产品;外形尺寸(宽×高×深)218mm×446mm× 792.1mm; 重量(满配)50Kg(不包括计算刀片);型号TC3600刀片服务器刀片机箱外形特征19”标准机架,10U;计算刀片最多10 个计算刀片,多种计算刀片可供选择;IB 网络模块机箱可提供一个QDR Infiniband 交换模块,可对外提供18 个40Gbps 的Infiniband 接口千兆以太网模块可提供两个千兆网络交换模块或一个千兆交换模块和一个千兆直通模块;每个网络交换模块可对外提供10 个千兆RJ45 接口或者两个SFP+接口(可扩展万兆)和六个千兆RJ45 接口;IO 刀片为每一个计算刀片提供一个PCI-E2.0 x8 扩展插槽,两个 2.5”SAS/SATA/SSD 硬盘槽位;或一个PCI-E 2.0 x16 扩展插槽;电源模块最多配置 4 个具有负载均衡和故障切换功能的热插拔2000W 交流电源模块,可以提供N+1,N+N 电源冗余配置;散热模块标配4 个带线性预补偿功能的冗余风扇,电源模块附带了风扇套件;管理模块标配一个,可选1+1 冗余。

N-Channel 60V (D-S) MOSFET 数据手册说明书

N-Channel 60-V (D-S) MOSFETFEATURES•Halogen-free According to IEC 61249-2-21 Definition•Low Threshold: 2 V (typ.)•Low Input Capacitance: 25 pF •Fast Switching Speed: 25 ns •Low Input and Output Leakage •TrenchFET ® Power MOSFET •1200V ESD Protection•Compliant to RoHS Directive 2002/95/ECBENEFITS•Low Offset Voltage •Low-Voltage Operation•Easily Driven Without Buffer •High-Speed Circuits •Low Error VoltageAPPLICATIONS•Direct Logic-Level Interface: TTL/CMOS•Drivers: Relays, Solenoids, Lamps, Hammers, Display,Memories, Transistors, etc.•Battery Operated Systems •Solid-State RelaysPRODUCT SUMMARYV DS (V)R DS(on) (Ω)I D (mA)602.8 at V GS = 10 V250SOT -23123 T op ViewGSDNotes:a.Pulse width limited by maximum junction temperature.b.Surface Mounted on FR4 board.*Pb containing terminations are not RoHS compliant, exemptions may apply.ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise notedParameterSymbol Limit Unit Drain-Source Voltage V DS 60VGate-Source VoltageV GS ± 20Continuous Drain Current (T J = 150 °C)b T A = 25 °C I D 250mA T A = 100 °C150Pulsed Drain Current a I DM 800Power Dissipation bT A = 25 °C P D 0.30W T A = 100 °C 0.13Maximum Junction-to-Ambient bR thJA 350°C/W Operating Junction and Storage Temperature Range T J, T stg-55 to 150°CNotes:a.For DESIGN AID ONLY, not subject to production testing.b.Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.c.Switching time is essentially independent of operating temperature.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T A = 25 °C, unless otherwise notedParameter Symbol Test Conditions LimitsUnitMin.Typ.aMax.StaticDrain-Source Breakdown Voltage V DS V GS = 0 V , I D = 10 µA 60V Gate-Threshold VoltageV GS(th)V DS = V GS , I D = 250 µA 12.5Gate-Body LeakageI GSSV DS = 0 V , V GS = ± 20 V ± 10µA V DS = 0 V , V GS = ± 15 V1V DS = 0 V, V GS = ± 10 V ± 150nAV DS = 0 V , V GS = ± 10 V , T J = 85 °C± 1000V DS = 0 V , V GS = ± 5 V± 100Zero Gate Voltage Drain Current I DSS V DS = 60 V , V GS = 0 V1µA V DS = 60 V , V GS = 0 V , T J = 125 °C500On-State Drain Current a I D(on)V GS = 10 V, V DS = 7.5 V 500mA V GS = 4.5 V, V DS = 10 V 300Drain-Source On-Resistance a R DS(on)V GS = 10 V, I D = 200 mA ΩV GS = 4.5 V , I D = 150 mA Forward T ransconductance a g fs V DS = 10 V , I D = 100 mA 100mS Diode Forward Voltage V SDI S = 100 mA, V GS = 0 V1.3V Dynamic aTotal Gate Charge Q g V DS = 10 V, V GS = 4.5 VI D ≅ 150 mA 0.40.6nCInput Capacitance C iss V DS = 25 V , V GS = 0 Vf = 1 MHz25pFOutput CapacitanceC oss 5Reverse Transfer Capacitance C rss2.0Switching a, b, c Turn-On Time t d(on)V DD = 30 V , R L = 150 ΩI D ≅ 200 mA, V GEN = 10 V , R G = 10 Ω20nsTurn-Off Timet d(off)302.83.13.33.8TYPICAL CHARACTERISTICS 25 °C, unless otherwise notedOn-Resistance vs. Drain CurrentOn-Resistance vs. Junction TemperatureTYPICAL CHARACTERISTICS 25 °C, unless otherwise notedThreshold Voltage Variance Over TemperatureOn-Resistance vs. Gate-Source VoltageNormalized Thermal Transient Impedance, Junction-to-AmbientNormalized Thermal Transient Impedance, Junction-to-FootTHERMAL RATINGS (T A = 25 °C, unless otherwise noted)No t e•The characteristics shown in the two graphs-Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)-Normalized Transient Thermal Impedance Junction-to-Foot (25 °C )are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part ca pab ili t i es can widely vary depending on actual application parameters and operating co nditio ns.SOT-23 (TO-236): 3-LEADDimMILLIMETERS INCHESMin Max Min MaxA0.89 1.120.0350.044 A10.010.100.00040.004 A20.88 1.020.03460.040 b0.350.500.0140.020 c0.0850.180.0030.007D 2.803.040.1100.120E 2.10 2.640.0830.104E1 1.20 1.400.0470.055 e0.95 BSC0.0374 Refe1 1.90 BSC0.0748 RefL0.400.600.0160.024 L10.64 Ref0.025 RefS0.50 Ref0.020 Refq3°8°3°8°ECN: S-03946-Rev. K, 09-Jul-01DWG: 5479RECOMMENDED MINIMUM PADS FOR SOT-23DisclaimerAll products due to improve reliability,function or design or for other reasons,product specifications and data are subject to change without notice.Taiwan VBsemi Electronics Co.,Ltd.,branches,agents,employees,and all persons acting on its or their representatives(collectively,the"Taiwan VBsemi"),assumes no responsibility for any errors,inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw)Taiwan VBsemi makes no guarantee,representation or warranty on the product for any particular purpose of any goods or continuous production.To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished:(1)any application and all liability arising out of or use of any products;(2)any and all liability, including but not limited to special,consequential damages or incidental;(3)any and all implied warranties, including a particular purpose,non-infringement and merchantability guarantee.Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of.Statement on whether the product is suitable for a particular application is non-binding.It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time.All operating parameters,including typical parameters must be made by customer's technical experts validated for each customer application.Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions,including but not limited to warranty herein.Unless expressly stated in writing,Taiwan VBsemi products are not intended for use in medical,life saving, or life sustaining applications or any other application.Wherein VBsemi product failure could lead to personal injury or death,use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk.Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing.The information provided in this document and the company's products without a license,express or implied, by estoppel or otherwise,to any intellectual property rights granted to the VBsemi act or document.Product names and trademarks referred to herein are trademarks of their respective representatives will be all.Material Category PolicyTaiwan VBsemi Electronics Co.,Ltd.,hereby certify that all of the products are determined to be R oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65/EU,2011Nian.6.8R i Yue restrict the use of certain hazardous substances in electrical and electronic equipment(EEE)-modification,unless otherwise specified as inconsistent.(www.VBsemi.tw)Please note that some documents may still refer to Taiwan VBsemi RoHS Directive2002/95/EC.We confirm that all products identified as consistent with the Directive2002/95/EC European Directive 2011/65/.Taiwan VBsemi Electronics Co.,Ltd.hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A.Please note that some Taiwanese VBsemi documents still refer to the definition of IEC61249-2-21,and we are sure that all products conform to confirm compliance with IEC61249-2-21standard level JS709A.。

2N60-TN3-T中文资料(Unisonic Technologies)中文数据手册「EasyDatasheet - 矽搜」

VGS
作为D.U.T.
* D.U.T.-测试设备
图 . 1A峰值二极管恢复 dv / dt测试电路
期
P.W.
P. W. D= 期
VGS= 10V
I FM,体二极管正向电流
di/dt IRM
体二极管反向电流
体二极管恢复dv
/dt
VDD
体二极管
正向压降
图 . 1B峰值二极管恢复 dv / dt波形
芯片中文手册,看全文,戳
△BV DSS/ △ TJ
ID = 250 µA
VGS(TH) RDS(ON)
gFS
VDS = VGS, ID = 250µA VGS = 10V, I D =1A VDS = 50V, I D = 1A（注1）
CISS COSS CRSS
VDS =25V, V GS =0V, f =1MHz
功率 M OSFET
注：1.脉冲测试：脉冲宽度 2.基本上是独立工作温度
功率 M OSFET
符号
测试条件
MIN TYP MAX 单元
tD (ON) tR
tD(OFF) tF QG
Q GS Q GD
VDD =300V, I D =2.4A, R G=25Ω （注1,2）
V DS=480V, V GS=10V, I D=2.4A （注1,2）
2N60
测试电路和波形（续）
V V R
10V
R V
D.U.T.
图 . 2A开关测试电路
功率 M OSFET
V
90%
10% V
t t
t t
图 . 2B开关波形
同类型
50kΩ
作为D.U.T.

多功能机械芯片用于轻型和标准负载的60 Hz直角齿轮电机安装、维护和配件手册说明书

For other service manuals visit our website at:/service_manuals.aspDORNER MFG. CORP .INSIDE THE USA OUTSIDE THE USA P .O. Box 20 • 975 Cottonwood Ave.TEL: 1-800-397-8664TEL: 262-367-7600Hartland, WI 53029-0020 USAFAX: 1-800-369-2440FAX: 262-367-58273200 & 5200 Series Bottom Mount 90° Drive Package for Light & Standard Load 60 HzGearmotorsInstallation, Maintenance & Parts ManualTable of ContentsIntroduction (2)Warnings - General Safety (3)Product Description (4)Specifications (4)Installation (6)Required Tools (6)Mounting (6)Preventive Maintenance and Adjustment (9)Required Tools (9)Timing Belt Tensioning (9)Timing Belt Replacement (9)Drive or Driven Pulley Replacement (10)Gear Reducer Replacement (10)Motor Replacement (12)Notes (13)Service Parts (14)Bottom Mount Drive Packagefor 90° Industrial Gearmotors (14)90° Industrial Gearmotors (15)Return Policy (16)IntroductionUpon receipt of shipment:•Compare shipment with packing slip. Contact factory regarding discrepancies.•Inspect packages for shipping damage. Contact carrier regarding damage.•Accessories may be shipped loose. See accessory instruc-tions for installation.Dorner 3200 Series conveyors are covered by patent numbers 5156260, 5156261, 5203447, 5265714, 6871737, 6910571, 6971509, and patent applications in other countries.Dorner LPZ Series conveyors are covered by patent numbers 5156260, 5156261, 5203447, 5265714, 5875883 and patent applications in other countries.Dorner 5200 Series conveyors have patents pending. Dorner’s Limited Warranty applies.Dorner reserves the right to make changes at any time without notice or obligation.Dorner has convenient, pre−configured kits of Key Service Parts for all conveyor products. These time saving kits are easy to order, designed for fast installation, and guarantee you will have what you need when you need it. Key Parts and Kits are marked in the Service Parts section of this manual with the Performance Parts Kits logo.IMPORTANT Some illustrations may show guards removed. DO NOT operate equipment without guards.Warnings - General SafetyA WARNINGThe safety alert symbol, black triangle with white exclamation, is used to alert you to potential personal injury hazards.Climbing, sitting, walking or riding on conveyor will cause severe injury.KEEP OFF CONVEYORS.DO NOT OPERATE CONVEYORS IN AN EXPLOSIVE ENVIRONMENT.A WARNINGExposed moving parts can cause severe injury.LOCK OUT POWER before removing guards or performing maintenance.A WARNINGGearmotors may be HOT.DO NOT TOUCH Gearmotors.A WARNINGExposed moving parts can cause severe injury.REPLACE ALL GUARDS BEFORE RUNNING CONVEYOR.A WARNINGDorner cannot control the physicalinstallation and application of conveyors. Taking protective measures is the responsibility of the user.When conveyors are used in conjunction with other equipment or as part of a multiple conveyor system, CHECK FOR POTENTIAL PINCH POINTS and other mechanical hazards before system start-up.Product DescriptionRefer to Figure 1 for typical components.Figure 1SpecificationsGearmotor Mounting Package Models:Example:Table 1: Gearmotor Specifications1Conveyor 2Cover3Driven Pulley 4Timing Belt 5Drive Pulley 6Gearmotor7Timing Belt Tensioner 8Mounting Bracket12834567Item Light Load GearmotorStandard Load GearmotorSingle- Phase Three Phase DC Variable SpeedSingle- Phase Three Phase VFD Variable Speed DC Variable SpeedOutput Power 0.25 hp (0.19 kw)0.5 hp (0.37 kw)Input Voltage 115 VAC 208 – 230/460 VAC130VDC 115 VAC 208 – 230/460 VAC230 VAC 90VDC Input Frequency 60Hz N/A 60Hz 10 – 60Hz N/A Input Current (Amperes) 5.0 1.2/0.6 2.27.4 2.1 – 2/1 1.6 5.0Gearmotor Ratios5:1, 10:1, 20:1, 40:1, 60:15:1, 10:1, 20:1, 40:1, 60:1Frame Size NEMA 42CZNEMA 56CMotor TypeTotally enclosed, Fan cooledT otally enclosed, Fan cooledSpecificationsTable 2: Belt Speeds for Fixed Speed 90° 60 Hz Gearmotors(vp) = voltage and phase 11 = 115 V , 1-phase23 = 208 – 230/460 V , 3-phaseTable 3: Belt Speeds for Variable Speed 90° DC GearmotorsTable 4: Belt Speeds for Fixed Speed 90° VFD GearmotorsLight Load GearmotorsStandard Load Gearmotors Belt Speed Drive Pulley Driven Pulley Part Number RPM In-lb N-m Part Number RPM In-lb N-m Ft/min M/min 32M060HL4(vp)FN 2922625.532M060HS4(vp)FN 2922625.5237.0161632M040HL4(vp)FN 4323726.832M040HS4(vp)FN 4324727.93410.4161632M040HL4(vp)FN 4323726.832M040HS4(vp)FN 4324727.95215.8241632M020HL4(vp)FN 861421632M020HS4(vp)FN 8624827.96921.0161632M020HL4(vp)FN 861421632M020HS4(vp)FN 8624827.910331.4241632M010HL4(vp)FN 173788.832M010HS4(vp)FN 17315617.613741.8161632M010HL4(vp)FN 173788.832M010HS4(vp)FN 17315617.617252.4201632M010HL4(vp)FN173788.832M010HS4(vp)FN 17315617.620662.82416N/A N/A N/A N/A 32M005HS4(vp)FN 345819.127583.81616N/A N/A N/A N/A 32M005HS4(vp)FN 345819.1343104.52016N/AN/AN/AN/A32M005HS4(vp)FN345819.1412125.62416Light Load GearmotorsStandard Load Gearmotors Belt Speed Drive Pulley Driven Pulley Part Number RPM In-lb N-m Part Number RPM In-lb N-m Ft/min M/min 32M060HLD3DEN 4219822.432M060HSD9DEN 4219822.4 4.0 – 33 1.2 – 10161632M040HLD3DEN 6316318.432M040HSD9DEN 6321524.3 6.0 – 50 1.8 – 15161632M040HLD3DEN 6316318.432M040HSD9DEN 6321524.39.0 – 75 2.7 – 23241632M020HLD3DEN 1259811.132M020HSD9DEN 12519622.112 – 100 3.6 – 30161632M020HLD3DEN 1259811.132M020HSD9DEN 12519622.118 – 150 5.5 – 45241632M010HLD3DEN 25054 6.132M010HSD9DEN 25010812.224 – 2007.3 – 61161632M010HLD3DEN 25054 6.132M010HSD9DEN 25010812.230 – 2509.1 – 76201632M010HLD3DEN250546.132M010HSD9DEN25010812.236 – 30011 – 922416Standard Load GearmotorsBelt SpeedDrive Pulley Driven Pulley Part Number RPM In-lb N-m Ft/min M/min 32M060HS423EN 2922625.5 2.3 – 22.90.7 – 7.0161632M040HS423EN 4324727.9 3.4 – 34.3 1.0 – 10.5161632M040HS423EN 4324727.9 5.1 – 51.5 1.6 – 15.7241632M020HS423EN 8624827.9 6.9 – 68.6 2.1 – 20.9161632M020HS423EN 8624827.910.3 – 103.0 3.1 – 31.4241632M010HS423EN 17315617.613.7 – 137.3 4.2 – 41.9161632M010HS423EN 17315617.617.2 – 171.6 5.2 – 52.3201632M010HS423EN 17315617.620.6 – 205.9 6.3 – 62.8241632M005HS423EN 345819.127.5 – 274.68.4 – 83.7161632M005HS423EN 345819.134.3 – 343.210.5 – 104.6201632M005HS423EN345819.141.2 – 411.912.6 – 125.62416NOTEFor belt speed other than those listed, contact factory for details.InstallationRequired Tools•Hex key wrenches:2 mm, 2.5 mm,3 mm, 5 mm •Straight edge•Torque wrenchMountingFigure2 Installation Component List:1.Typical components (Figure 3).Figure3A WARNINGExposed moving parts can cause severe injury.LOCK OUT POWER before removing guards or performing maintenance.A WARNINGFor Cleated Belt Conveyors, Gearmotors must be mounted as shown in Figure 2. Failure to do so creates pinch points which can cause severe injury.NOTEGearmotor position on Flat Belt conveyor shown below left, Figure 2. Gearmotor position on Cleated Belt conveyor shown below right, Figure 2.1Bottom Mount Assembly2Drive Pulley3Cover4M4 Socket Head Screws (4x)5Driven Pulley6Key7M6 Socket Head Screws (4x)8M8 Socket Head Screws (2x)9Timing BeltNOTECleated belt mounting package shown, flatbelt mounting package similar.NOTEGearmotor may be operated in positions 1, 3or 4 (Figure 4).213465879InstallationFigure 42.If required, change gearmotor position by removing four (4) screws (Figure 5,item 1). Rotate gearmotor to other position and replace screws (Figure 5,item 1). Tighten to 110 in-lb (12 Nm).Figure 53.Locate drive output shaft (Figure 6,item 1). Remove two (2) M8 screws (Figure 6,item 2) and four (4) M6 screws (Figure 6,item 3) and discard.Figure 64.Attach mount assembly (Figure 7,item 1) with two (2) M8 screws (Figure 7,item 2) and four (4) M6 screws (Figure 7,item 3). Tighten M6 screws to 146 in −lbs (16.5 N −m) and M8 screws to 288 in −lbs (32.5 N −m).Figure 75.Install key (Figure 8,item1).Figure 86.Wrap timing belt (Figure 8,item 2) around driven pulley (Figure 8,item 3) and drive pulley (Figure 8,item 4). Install driven pulley onto conveyor shaft.113321A WARNINGDrive shaft keyway may be sharp.HANDLE WITH CARE.2134231Installation7.Using a straight edge (Figure 9,item 1), align driven pulley (Figure 9,item 1) with drive pulley (Figure 9,item 1).Figure 98.Tighten driven pulley taper-lock screws (Figure 10,item 1).Figure 109.Depending on conveyor belt travel (direction A or B), locate timing belt tensioner (Figure 11,item 1) as shown. Tension timing belt to obtain 1/8” (3 mm) deflection for 6 lb (3 Kg) of force at timing belt mid-point (Figure 11,item 2). Tighten tensioner screw to 110 in-lb (12 Nm).Figure 1110.Install cover (Figure 12,item 1) with four (4) screws(Figure 12,item 2). Tighten screws to 35 in-lb (4 Nm).Figure 12213121AB212Preventive Maintenance and AdjustmentRequired Tools•Hex key wrenches:2 mm, 2.5 mm,3 mm, 5 mm•Adjustable wrench (for hexagon head screws)•Straight edge•Torque wrenchTiming Belt Tensioning1.Remove four (4) screws (Figure 12,item2) and remove cover (Figure 12,item1).2.Loosen tensioner (Figure 13,item1).Figure133.Depending on conveyor belt travel (direction A or B),locate timing belt tensioner (Figure 11,item1) asshown. Tension timing belt to obtain 1/8” (3 mm)deflection for 6 lb (3 Kg) of force at timing belt mid-point (Figure 11,item2). Tighten tensioner screw to110 in-lb (12 Nm).4.Install cover (Figure 12,item1) with four (4) screws(Figure 12,item2). Tighten screws to 35 in-lb (4 Nm).Timing Belt Replacement1.Remove four (4) screws (Figure 12,item2) andremove cover (Figure 12,item1).2.Loosen tensioner (Figure 13,item1).3.Remove timing belt (Figure 14,item1).Figure144.Install new timing belt.5.Depending on conveyor belt travel (direction A or B),locate timing belt tensioner (Figure 11,item1) asshown. Tension timing belt to obtain 1/8” (3 mm)deflection for 6 lb (3 Kg) of force at timing belt mid-point (Figure 11,item2). Tighten tensioner screw to110 in-lb (12 Nm).6.Install cover (Figure 12,item1) with four (4) screws(Figure 12,item2). Tighten screws to 35 in-lb (4 Nm).A WARNINGExposed moving parts can cause severe injury.LOCK OUT POWER before removing guards or performing maintenance.1A WARNINGExposed moving parts can cause severe injury.LOCK OUT POWER before removing guards or performing maintenance.NOTEIf timing belt does not slide over pulley flange, loosen driven pulley taper-lock screws (Figure 14,item2) and remove pulley with belt (Figure 14,item1). For re-installation, see steps 6 thru 8 on beginning on page7.21Preventive Maintenance and Adjustment Drive or Driven Pulley Replacement1.Complete steps 1 through 3 of “Timing Belt Replacement” section on page9.2.Remove taper-lock screws (Figure 15,item1). Insertone (1) of taper lock screws in remaining hole (Figure 15,item2). Tighten screw until pulley is loose. Remove pulley and taper hub assembly.Figure15plete steps 6 through 9 of “Installation” sectionbeginning on page7.Gear Reducer Replacement 1.Remove four (4) screws (Figure 12,item2) andremove cover (Figure 12,item1).2.Loosen M10 shaft locking screw (Figure 16,item1).Figure163.Loosen tensioner (Figure 13,item1).4.Loosen taper-lock screws (Figure 17,item1) andremove drive pulley: Insert one (1) of taper lock screwsin remaining hole (Figure 17,item2). Tighten screwuntil pulley is loose.Figure175.Remove pulley (Figure 18,item1), taper hub assembly(Figure 18,item2), and timing belt (Figure18,item3).Figure18A WARNINGExposed moving parts can cause severeinjury.LOCK OUT POWER before removing guardsor performing maintenance.NOTEIf drive pulley (Figure 18,item1) is replaced,wrap timing belt around drive pulley andcomplete step 3.A WARNINGExposed moving parts can cause severeinjury.LOCK OUT POWER before removing guardsor performing maintenance.21121132851-526 Rev. E11Dorner Mfg. Corp.3200 & 5200 Series Bottom Mount 90° Drive Package for Light & Standard Load 60 Hz GearmotorsPreventive Maintenance and Adjustment6.Remove four (4) gear reducer mounting screws (Figure 19,item 1). Remove gearmotor.Figure 197.Remove four screws (Figure 20,item 1). Detach motor (Figure 20,item 2) from gear reducer (Figure 20,item 3). Retain motor output shaft key (Figure 20,item 4).Figure 208.Remove two (2) screws (Figure 20,item 5) and detach output shaft cover (Figure 20,item 6).9.Remove M10 shaft locking screw (Figure 21,item 1), remove gear reducer output shaft (Figure 21,item 2) and key (Figure 21,item 3).Figure 2110.Insert the new shaft with key (Figure 21,item 3) intonew gear reducer. Tighten M10 shaft locking screw (Figure 21,item 1) to 300 in −lbs (34 N −m).11.With key (Figure 20,item 4) in keyway, slide motor(Figure 20,item 2) and gear reducer (Figure20,item 3) together. Install screws (Figure 20,item 1) and tighten.Figure 2212.Install gearmotor to mounting bracket and tightenscrews (Figure 19,item 1) to 110 in-lb (12 Nm).plete steps 6 through 10 of “Installation” sectionbeginning on page 7.NOTEOutput shaft (Figure 21,item 2) is held in Gear Reducer with a tapered press fit.Removal may require use of an arbor press.11234165IMPORTANTBe extremely careful when coupling motor to gear reducer. Avoid misalignment and forcing the connection causing possible permanent gear reducer seal damage.NOTEGearmotor position on Flat Belt conveyor shown below left, Figure 22. Gearmotor position on Cleated Belt conveyor shown below right, Figure 22.NOTEDrive pulley (Figure 18,item 1) is removed. Wrap timing belt around drive pulley and complete step 13.123Dorner Mfg. Corp.12851-526 Rev. E3200 & 5200 Series Bottom Mount 90° Drive Package for Light & Standard Load 60 Hz GearmotorsPreventive Maintenance and AdjustmentMotor Replacement1.For single phase motor, unplug power cord from outlet.2.For three phase and VFD variable speed motor:a.Loosen terminal box screws (Figure 23,item 1) and remove cover (Figure 23,item 2).Figure 23b.Record wire colors on terminals 1, 2 and 3. Loosen wire nuts and remove wires 1, 2 and 3.c.Loosen cord grip and remove cord.3.For DC variable speed motor, unplug motor cord at disconnect (Figure 24,item 1).Figure 244.Remove four (4) screws (Figure 25,item 1). Detach motor (Figure 25,item 2) from gear reducer (Figure 25,item 3). Retain motor output shaft key (Figure 25,item 4).Figure 255.With key (Figure 26,item 1) in keyway, slide motor (Figure 26,item 2) and gear reducer together. Install screws (Figure 26,item 3) and tighten.Figure 266.Replace wiring:•For a single phase motor, reverse step 1 on page 12.•For a three phase or VFD variable speed motor, reverse step 2 on page 12.•For a DC variable speed motor, reverse step 3 on page 12.A WARNINGExposed moving parts can cause severe injury.LOCK OUT POWER before removing guards or performing maintenance.Hazardous voltage will cause severe injury or death.LOCK OUT POWER BEFORE WIRING.2111IMPORTANTBe extremely careful when coupling motor to gear reducer. Avoid misalignment and forcing the connection causing possible permanent gear reducer seal damage.4231213Notes3200 & 5200 Series Bottom Mount 90° Drive Package for Light & Standard Load 60 Hz Gearmotors851-526 Rev. E13Dorner Mfg. Corp.Dorner Mfg. Corp.14851-526 Rev. E3200 & 5200 Series Bottom Mount 90° Drive Package for Light & Standard Load 60 Hz GearmotorsService PartsNOTEFor replacement parts other than those shown on this page, contact an authorized Dorner Service Center or the factory. Key Service Parts and Kits are identified by the Performance Parts Kits logo . Dorner recommends keeping these parts on hand.10Item Part Number Description1300139Bearing Shaft Cover2300871Drive Cover3301146Grove Gearhead Output Shaft 4301076Drive Tensioner Slide 5301151Mounting Plate 6301153T ensioner Bearing Assy7811−133Driven Pulley, 14 T ooth, Taper LockTL1108811−126Driven Pulley, 16 T ooth, Taper Lock TL11088811−133Drive Pulley, 14 T ooth, T aper Lock TL1108811−126Drive Pulley, 16 T ooth, T aper Lock TL1108811−127Drive Pulley, 18 T ooth, T aper Lock TL1210811−135Drive Pulley, 20 T ooth, T aper Lock TL1210811−136Drive Pulley, 22 T ooth, T aper Lock TL1610811−137Drive Pulley, 24 T ooth, T aper Lock TL1610Item Part Number Description851-526 Rev. E15Dorner Mfg. Corp.3200 & 5200 Series Bottom Mount 90° Drive Package for Light & Standard Load 60 Hz GearmotorsService Parts90° Industrial Gearmotors9811−288T aper Lock Bushing, 20 MM, TL1108811−289T aper Lock Bushing, 20 MM, TL1210811−290T aper Lock Bushing, 20 MM, TL161010814-125Timing Belt, 1.0” W x 25.5” L 814−059Timing Belt, 1.0” W x 27.0” L 814−060Timing Belt, 1.0” W x 28.0” L 814-079Timing Belt, 1.0” W x 30.0” L 11920483M Flanged Socket Head Screw,M4 x 16 mm 12911−013Flat WasherItem Part Number Description13912−084Square Key14920608M Socket Head Screw, M6 x 8 mm 15920618M Socket Head Screw, M6 x 18 mm 16920622M Socket Head Screw, M6 x 22 mm 17920835M Socket Head Screw, M8 x 35 mm 18961645M Socket Head Screw, M16 x 45 mm 19980630M Square Key 20991610M Hex Jam Nut, M1621931025MFlat Head Screw, M10 x 25 mmItem Part Number Description21Item Part No.Description1 62MS411FN Motor, 0.25hp (0.19Kw), 115/230 Volts,60 Hz, 1-Phase62MS411FR Motor, 0.25hp (0.19Kw), 115/230 Volts, 60 Hz, 1-Phase with Reversing 62MS423Motor, 0.25hp (0.19Kw), 208−230/460 Volts, 60 Hz, 3-Phase22MSD3DEN Motor, 0.25hp (0.19Kw), 130 VDC 62MH411FN Motor, 0.5hp (0.37Kw), 115/230 Volts, 60Hz, 1−Phase62MH423Motor, 0.5hp (0.37Kw) 208−230/460 Volts, 60Hz, 3 Phase62MHD9DEN Motor, 0.5hp (0.37Kw), 90 VDC 32MS423EN Motor, 0.5hp (0.37Kw), 230 Volts, 3 Phase Inverter Duty32MHD9DENMotor, 0.75 hp, (0.56Kw), 90 VDC 2 32M005HL Gear Reducer, 5:1, NEMA 42CZ 32M010HL Gear Reducer, 10:1, NEMA 42CZ 32M020HL Gear Reducer, 20:1, NEMA 42CZ 32M040HL Gear Reducer, 40:1, NEMA 42CZ 32M060HL Gear Reducer, 60:1, NEMA 42CZ 32M005HS Gear Reducer, 5:1, NEMA 56C 32M010HS Gear Reducer, 10:1, NEMA 56C 32M020HS Gear Reducer, 20:1, NEMA 56C 32M040HS Gear Reducer, 40:1, NEMA 56C 32M060HS Gear Reducer, 60:1, NEMA 56C 32M010HHGear Reducer, 10:1, 140 TCDorner Mfg. Corp. reserves the right to change or discontinue products without notice. Allproducts and services are covered in accordance with our standard warranty. All rights reserved. © Dorner Mfg. Corp. 2008DORNER MFG. CORP.975 Cottonwood Ave., PO Box 20Hartland, WI 53029-0020 USAUSATEL 1-800-397-8664 (USA)FAX 1-800-369-2440 (USA)Internet: Outside the USA:TEL 1-262-367-7600FAX 1-262-367-5827Return PolicyReturns must have prior written factory authorization or they will not be accepted. Items that are returned to Dorner without authorization will not be credited nor returned to the original sender. When calling for authorization, please have the following information ready for the Dorner factory representative or your local distributor:1. Name and address of customer.2. Dorner part number(s) of item(s) being returned.3. Reason for return.4. Customer's original order number used when ordering the item(s).5. Dorner or distributor invoice number.A representative will discuss action to be taken on the returned items and provide a Returned Goods Authorization numberfor reference.There will be a return charge on all new undamaged items returned for credit where Dorner was not at fault. Dorner is not responsible for return freight on such items.Conveyors and conveyor accessoriesStandard catalog conveyors 30%MPB Series, cleated and specialty belt conveyors50%7400 & 7600 Series conveyors non-returnable itemsEngineered special products case by caseDrives and accessories30%Sanitary stand supports non-returnable itemsPartsStandard stock parts30%MPB, cleated and specialty belts non-returnable itemsReturns will not be accepted after 60 days from original invoice date.The return charge covers inspection, cleaning, disassembly, disposal and reissuing of components to inventory.If a replacement is needed prior to evaluation of returned item, a purchase order must be issued. Credit (if any) is issued only after return and evaluation is complete.Dorner has representatives throughout the world. Contact Dorner for the name of your local representative. Our Technical Sales, Catalog Sales and Service Teams will gladly help with your questions on Dorner products.For a copy of Dorner's Warranty, contact factory, distributor, service center or visit our website at .For replacement parts, contact an authorized Dorner Service Center or the factory.851-526 Rev. E Printed in U.S.A.。

50N60场效应管资料

产品型号

联想U410-IFI处理器第三代智能英特尔® 酷睿™ i5 处理器i5-3317U操作系统正版Windows® 7 家庭普通版 64位推荐升级至正版Windows® 7 专业版内存4GB DDR3硬盘500G大容量高速硬盘+24G固态硬盘显示屏14.0" WXGA超薄炫彩屏，16:9黄金比例显卡NVIDIA Geforce G610M 高性能独立显卡，全面支持DX11 显示内存1G显存键盘联想高触感巧克力键盘视频输出HDMI 1.4高清影音端口摄像头100万像素HD高清摄像头，支持安全易用的人脸识别功能声音系统Dolby Home Theatre音效认证+抗噪麦克风蓝牙蓝牙3.0模块标准接口HDMI 1.4接口，2个USB 3.0接口(读写速度超过USB 2.0 10倍)，2个USB 2.0接口，RJ45以太网口，全阵列式抗噪麦克风，支持立体音的耳机/音频输出整合插孔，多功能读卡器电源100～240V宽电压电源适配器电池类型高性能聚合物电池，9小时超长续航时间尺寸344x235x21mm重量1.85kg(含有聚合物电池，具体重量依据产品出货配置为准) 可选件笔记本包鼠套装礼包(需另行购买)特色功能精湛工艺：极致一体化设计，外表看不到任何一颗螺丝全铝合金外观，20多道冲压、CNC、钻石洗工艺，纳米级喷砂着色工艺超长待机：9小时超长续航，3个月深度睡眠待机即开即用：支持1秒瞬间唤醒，7秒快速从深度睡眠唤醒系统加速：数据存取速度提升至最高4倍，加快运行速度多点触控Touchpad，打字时防误触配备第四代Dolby Home Theatre音效认证*一键拯救系统华硕A55VDLenovo/联想 Z480A-IFI处理器第三代智能英特尔® 酷睿™i5处理器i5-3210M(2.5GHz,可睿频加速至3.1GHz)操作系统Linpus Lite（如需安装WIN7系统，请联系客服）内存4GB DDR3 1333MHz高速内存(支持扩展至8GB)硬盘500G SATA 硬盘无线局域网卡802.11bgn无线局域网卡光驱超级DVD刻录光驱显示屏14.0" WXGA LED背光屏，16:9黄金比例显卡NVIDIA Geforce GT630M 高性能独立显显示内存1G DDR3大容量高速独立显存键盘联想高触感巧克力键盘视频输出HDMI 高清影音端口，标准VGA声音系统第四代Dolby 家庭影院环绕立体音效+2W×2专业级超大音响+抗噪麦克风网络连接10M/100M以太自适应网卡标准接口HDMI 接口，2个USB2.0接口，2个USB3.0接口，VGA接口，RJ45，全阵列式抗噪麦克风，支持立体音的耳机插孔/音频输出，多合一读卡器(SD/MMC/MS/MS pro/XD)电源100～240V宽电压电源适配器电池类型高性能6芯锂离子电池尺寸341mm x 232mm x 20~32.4mm重量 2.3Kg(含有6芯电池，具体重量依据产品特色功能高性能娱乐显卡，支持3D电视输出第四代Dolby 家庭影院环绕立体音效专业级、高保真、超拉风超大音响一键影音快捷触控专区潮流多彩外观、3D立体晶钻工艺超静音高效散热设计电池寿命延长技术+高级电源管理*一键拯救系统Dell/戴尔 Ins14r-9518 戴尔笔记本 14r-9518os。

FKPF12N60中文资料

FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80Electrical Characteristics T C =25°C unless otherwise notedNotes:1.Gate Open2.Measurement using the gate trigger characteristics measurement circuit3.The critical-rate of rise of the off-state commutating voltage is shown in the table below4.The contact thermal resistance R TH(c-f) in case of greasing is 0.5 °C/WQuadrant Definitions for a TriacSymbol ParameterTest ConditionMin.Typ.Max.Units I DRM Repetieive Peak Off-State Current V DRM applied--20µA V TMOn-State VoltageT C =25°C, I TM =17AInstantaneous measurement-- 1.5V V GTGate Trigger Voltage (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)-- 1.5V II T2(+), Gate (-)-- 1.5V IIIT2(-), Gate (-)-- 1.5V I GT Gate Trigger Current (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)--30mA II T2(+), Gate (-)--30mA IIIT2(-), Gate (-)--30mA V GD Gate Non-Trigger Voltage T J =125°C, V D =1/2V DRM 0.2--V I H Holding Current V D = 12V, I TM = 1A 50mA I L Latching Current I, III V D = 12V, I G = 1.2I GT 50mA II70mA dv/dt Critical Rate of Rise of Off-State VoltagV DRM = Rated, T j = 125°C,Exponential Rise300V/µs (dv/dt)CCritical-Rate of Rise of Off-State Commutating Voltage (Note 3)10--V/µsV DRM (V)Test ConditionCommutating voltage and current waveforms(inductive load)FKPF12N601. Junction Temperature T J =125°C2. Rate of decay of on-state commutating current (di/dt)C = - 6.0A/ms3. Peak off-state voltage V D = 400VFKPF12N80Supply VoltageMain CurrentMain VoltageTimeTimeTime V D(dv/dt)C(di/dt)CT2 Positive+-T2 NegativeQuadrant IIQuadrant IQuadrant IIIQuadrant IVI GT -+I GT(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。

FGH40N60UFDTU;中文规格书,Datasheet资料

©2009 Fairchild Semiconductor Corporation
1
FGH40N60UFD Rev. C1
C
G
E
Ratings 600 ± 20 80 40 120 40 20 80 290 116
-55 to +150 -55 to +150
300
Units V V A A A A A A
W W oC oC
oC
Typ.
-
Max.
0.43 1.45 40
Units
oC/W oC/W oC/W

/
FGH40N60UFD 600V, 40A Field Stop IGBT
Package Marking and Ordering Information
TC = 25oC TC = 125oC TC = 25oC TC = 125oC
Min.
-
Typ.
1.95 1.85 45 140 75 375
Max
2.6 -
Units
V ns nC
FGH40N60UFD Rev. C1
3
/

Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 20A
TC = 25oC TC = 125oC
trr Qrr
Diode Reverse Recovery Time
IES =20A, dIES/dt = 200A/µs Diode Reverse Recovery Charge
FGH40N60UFD 600V, 40A Field Stop IGBT

SINAMICS G150 样本(中文)

C lo s e d -Io o p -c o n tr o l
D ia g n o s is
H e lp
ESC
OK
首先，选择所使用的电机类型（技术数据符合标准 IEC 或 NEMA）。
Select Motortype ( IEC/ NEMA)
1 2 3
4
5
操作面板 1 通电指示灯（绿色） 2 报警指示灯（黄色） 3 故障指示灯（红色） 4 数字键盘 5 键盘锁 6 显示 7 功能键 F1 - F5 8 本地 / 远程优先级的选择 9 驱动控制小键盘
1
变频调速柜
SINAMICS G150
■ 特性（续）
• 结构紧凑，模块化设计，极易维护 • 无故障设计 • 易于连接，装配简单 • 调试快速，菜单提示，无需复杂参数化 • 舒适型图形化操作面板，操作简便，一目了然，测量值以纯
文本或准模拟条形图显示
质量
SINAMICS G150 变频调速柜是按最高质量标准和要求监造。产品具有最大的可靠性、可用性和功能性。
A&D Mall 网址： /automation/mall
DA 12 DA 21.1 DA 22 DA 63 DA 65.10 M 11 SD 01 CA 01
SINAMICS G150 变频调速柜订货样本 D 11
2004 年 6 月
本样本所及产品和系统均为最高质量监造，获得德国 DQS 认证，符合标准 DIN EN ISO 9001。 DQS 认证为所有 EQ Net 获得国际认可。
110 kW - 560 kW (~800kW)
SINAMICS G150 变频调速柜，结构紧凑，模块化设计，维修方便。
丰富的电气和机械选件，可使驱动系统优化用于各种应用。

FGH60N60SFDTU中文资料

Dynamic Characteristics
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VCE = 30V, VGE = 0V, f = 1MHz
Switching Characteristics
Notes: 1: Repetitive test, Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RθJC(IGBT) RθJC(Diode) RθJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
180 TC = 125oC
150
120
20V 15V
12V 10V
Collector Current, IC [A]
Collector Current, IC [A]
90
90
60
60
VGE = 8V
VGE = 8V
30
30
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge

IGBT

IGW15N120H3
STGW40N120KD
STGW40NC60WD
FGH60N60UFDTU
FSAM15SM60A
STGY50NC60WD
HGTG27N120BN
IRG4PC30FDPBF
IRGP4066DPBF
HGTG40N60A4
STGD7NC60HT4
STGW20NC60VD
FGA25N120ANTDTU
2SC0435T2A0-17
STGF7NB60SL
FNA41560
STGW60H65F
STGB20NC60V
STGIPL14K60
STGW35NC120HD
HGTP10N120BN
STGIPS14K60T
IRG7PH46UDPBF
IRG4RC10UTRPBF
IRGP4062DPBF
FGPF4533
SKW15N60
IRG7I313UPBF
IRG4PC40UD-EPBF
FGH80N60FD2TU
IRG4PC30FPBF
STGP18N40LZ
IRG7PH42U-EP
IRGP4066-EPBF
HGTG10N120BND
IRGP4063DPBF
FGH75N60UFTU
STGD10NC60KT4
STGIPL20K60
STGIPS20K60
STGWA45HF60WDI
FGL60N100BNTD
STGD18N40LZT4
STGIPS10K60T
IRG7PH42UPBF
HGTG30N60A4
STGW45HF60WD

浪潮服务器产品介绍

1.2.1 塔式服务器说明书1.2.1.1 浪潮英信服务器NP120D2产品手册●产品定位浪潮英信NP120D2是浪潮英信NP120D的升级版，支持单路45纳米Xeon处理器，安全性更强、可靠性更高。

浪潮英信NP120D2灵活的按需配置可以满足不断发展的政府、教育等行业应用环境，便于管理和维护，性价比极具竞争力。

●目标用户政府、教育的无纸化办公中小型企业的应用服务器文件、打印、邮件、Web、多媒体教学应用服务器小型数据库管理服务器校园网应用服务器●产品优势性能单路双核、四核英特尔®至强®处理器（包括UP 45纳米处理器）Xeon 3xxx系列处理器系统前端总线频率最高可达1333MHz，提供强大的计算性能；可靠改进型38°散热机箱机箱侧板打孔，风扇增大提高系统可靠性，充分适应各种CPU需求ECC内存技术内存能够有效地提供数据容错功能，降低系统宕机的概率；集成SATA RAID0，1，10Host RAID 有效的避免数据丢失，提高了数据的安全性，为用户提供了保障。

360 °静音设计全面贯穿健康理念，大幅降低系统噪音，使得低端服务器更加人性化；智能浪潮睿捷服务器套件管理软件＋导航软件大大简化了服务器的维护与+备份还原软件管理工作，降低管理成本弹性最大6块内置硬盘机箱自带2个位置，可扩1个硬盘托架支持4个内置硬盘为用户提供足够的业务拓展空间支持传统PCI和高速PCI-E插槽保护用户现有的IT设备投资，使用户短期的投资获得更长期的超值回报。

NP120D2产品技术规格1.2.1.2 浪潮英信服务器NP370D2产品手册产品定位：浪潮英信NP370D2是一款性能卓越、安全可靠的部门级双路塔式服务器，支持Intel最新45nm双核/四核处理器，提供更优势的性能/功耗比，其灵活的按需配置即可以满足不断发展的商业应用环境，又能够为企业带来更好的经济效益。

目标用户定位在政府电子政务、中低端图形工作站、办公自动化、中小企业的应用服务器、小型数据库服务器、文件管理服务器、校园网应用服务器等。

IXYS IXGN 50N60BD2 IXGN 50N60BD3 数据手册

V CES = 600 V I C25= 75 A V CE(sat)= 2.5 V t fi= 150 nsSymbol Test ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.BV CES I C = 250 m A, V GE = 0 V 600V V GE(th)I C= 250 m A, V CE = V GE2.55V I CES V CE = 0.8 • V CES T J = 25°C 200m A V GE = 0 VT J = 125°C1mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)I C= I C90, V GE = 15 V2.5VFeatures•International standard package miniBLOC•Aluminium nitride isolation -high power dissipation •Isolation voltage 3000 V~•Very high current, fast switching IGBT & FRED diode •MOS Gate turn-on -drive simplicity•Low collector-to-case capacitance •Low package inductance (< 10 nH)-easy to drive and to protect •Molding epoxies meet UL 94 V-0flammability classification Applications •AC motor speed control •DC servo and robot drives •DC choppers •Buck convertersAdvantages•Easy to mount with 2 screws •Space savings •High power density98502C (8/99)Symbol Test Conditions Maximum RatingsIXGN 50N60BD2IXGN 50N60BD3HiPerFAST TM IGBT with HiPerFREDBuck & boost configurationsSOT-227B, miniBLOCE 1534322143...BD2 ...BD3IXGN50N60BD21 = Emitter;2 = Gate3 = Collector;4 = Diode cathode IXGN50N60BD31 = Emitter/Diode Cathode;2 = Gate3 = Collector;4 = Diode anodeIXYS reserves the right to change limits, test conditions, and dimensions.SymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.g fs I C = I C90; V CE = 10 V,3550S Pulse test, t £ 300 m s, duty cycle £ 2 %C ies 4100pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz290pF C res 50pF Q g 110nC Q ge I C = I C90, V GE = 15 V, V CE = 0.5 V CES 30nC Q gc 35nC t d(on)50ns t ri 50ns t d(off)110250ns t fi 150220ns E off 3.0 4.0mJ t d(on)50ns t ri 60ns E on 3.0mJ t d(off)200ns t fi 250ns E off 4.2mJ R thJC 0.50K/WR thCK0.05K/WInductive load, T J = 25°C I C = I C90, V GE = 15 V, L = 100 m H,V CE = 0.8 V CES , R G = R off = 2.7 W Remarks: Switching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R GInductive load, T J = 125°C I C = I C90, V GE = 15 V, L = 100 m H V CE = 0.8 V CES , R G = R off = 2.7 W Remarks: Switching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R GReverse Diode (FRED)Characteristic Values(T J = 25°C, unless otherwise specified)Symbol Test Conditionstyp. max.I R T VJ = 25°C V R = V RRM 650uA T VJ = 150°C2.5mA V F I F = 60 A, T VJ = 150°C1.75V Pulse test, t £ 300 m s, duty cycle d £ 2 %T VJ = 25°C2.40V I RM I F = I C90, V GE = 0 V, -di F /dt = 100 A/m s 8.0A V R = 540 Vt rr I F = 1 A, -di/dt = 50 A/m s, V R = 30 VT J = 25°C35nsR thJC0.85K/WV CE - Volts0246810I C - A m p e r e s4080120160200V GE - Volts 0246810I C - A m p e r e s20406080100V CE -Volts0510152025303540C a p a c i t a n c e - p F10100100010000T J - Degrees C255075100125150V C E (s a t ) - N o r m a l i z e d0.40.60.81.01.21.41.6V CE - Volts012345I C - A m p e r e s20406080100V CE - Volts012345I C - A m p e r e s20406080100Fig. 2. Extended Output CharacteristicsFig. 1. Saturation Voltage CharacteristicsFig. 4. Temperature Dependence of V CE(sat)Fig. 3. Saturation Voltage CharacteristicsFig. 5. Saturation Voltage Characteristics Fig. 6. Junction Capacitance CurvesPulse Width - Seconds0.000010.00010.0010.010.11Z t h J C (K /W )0.0010.010.11V CE - Volts0100200300400500I C - A m p e r e s0.1110100Q g - nanocoulombs50100150200250300V G E - V o l t s5101520R G - Ohms010********60E (OFF) - millijoules024681012E (O N ) - m i l l i j o u l e s123456I C - Amperes20406080100E (OFF) - milliJoules024681012E (O N ) - m i l l i j o u l e s123456600Fig. 11. Transient Thermal ResistanceFig. 8. Dependence of tfi and E OFF on R G .Fig. 7. Dependence of E ON and E OFF on I C .Fig. 9. Gate ChargeFig. 10. Turn-off Safe Operating AreaFig. 18Transient thermal resistance junction to case。

STD5N60DM2 高压N型电源MOSFET说明书

STD5N60DM2DPAKFeatures•Fast-recovery body diode•Extremely low gate charge and input capacitance•Low on-resistance•100% avalanche tested•Extremely high dv/dt ruggedness•Zener-protectedApplications•Switching applicationsDescriptionThis high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Q rr) and time (t rr) combined with low R DS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.N-channel 600 V, 1.38 Ω typ., 3.5 A MDmesh™ DM2Power MOSFET in a DPAK packageSTD5N60DM2DatasheetSTD5N60DM2Electrical ratings 1Electrical ratingsTable 1. Absolute maximum ratings1.Pulse width is limited by safe operating area.2.I SD ≤3.5 A, di/dt=400 A/μs; V DS peak < V(BR)DSS, V DD = 480 V.3.V DS ≤ 480 V.Table 2. Thermal data1.When mounted on a 1-inch² FR-4, 2 Oz copper board.Table 3. Avalanche characteristics1.Pulse width limited by T jmax.2.Starting T j = 25 °C, I D = I AR, V DD = 50 V.STD5N60DM2Electrical characteristics 2Electrical characteristics(T case = 25 °C unless otherwise specified).Table 4. Static1.Defined by design, not subject to production test.Table 5. Dynamic1.C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80% V DSS.Table 6. Switching timesSTD5N60DM2Electrical characteristicsTable 7. Source-drain diode1.Pulse width is limited by safe operating area.2.Pulse test: pulse duration = 300 µs, duty cycle 1.5%.STD5N60DM2Electrical characteristics (curves) 2.1Electrical characteristics (curves)STD5N60DM2 Electrical characteristics (curves)STD5N60DM2 Electrical characteristics (curves)STD5N60DM2Test circuits 3Test circuitsSTD5N60DM2Package information 4Package informationIn order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: . ECOPACK® is an ST trademark.4.1DPAK (TO-252) type A package informationFigure 19. DPAK (TO-252) type A package outline0068772_A_25Table 8. DPAK (TO-252) type A mechanical data4.2DPAK (TO-252) type E package informationFigure 20. DPAK (TO-252) type E package outline0068772_type-E_rev.25Table 9. DPAK (TO-252) type E mechanical dataFigure 21. DPAK (TO-252) type E recommended footprint (dimensions are in mm)FP_0068772_254.3DPAK (TO-252) packing informationFigure 22. DPAK (TO-252) tape outlineP0K 0U ser direction of feed10 pitches cumulativetolerance on tape +/- 0.2 mmU ser direction of feedRBending radiusB 1including draft andradii concentric around B0AM08852v1Figure 23. DPAK (TO-252) reel outlineAM06038v1 Table 10. DPAK (TO-252) tape and reel mechanical dataRevision historyTable 11. Document revision historyContentsContents1Electrical ratings (2)2Electrical characteristics (3)2.1Electrical characteristics (curves) (5)3Test circuits (8)4Package information (9)4.1DPAK (TO-252) type A package information (9)4.2DPAK (TO-252) type E package information (11)4.3DPAK (TO-252) packing information (13)Revision history (16)IMPORTANT NOTICE – PLEASE READ CAREFULLYSTMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.No license, express or implied, to any intellectual property right is granted by ST herein.Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.Information in this document supersedes and replaces information previously supplied in any prior versions of this document.© 2018 STMicroelectronics – All rights reservedSTD5N60DM2。

N60培训手册

OPPO T9
联想 i61
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诺基亚 5232
三星GT-S5230c 三星
LG KP500
OPPO T9
联想 i61
AMOI N60
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上市时间参考报价市场份额尺颜屏寸色幕
2010.3 1489
0.1％ 111×51.7×15.5
2009.5 1500
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核心卖点
个性化彩壳订制开心田园，趣味待机；开心田园，趣味待机；双摄像头，炫我自拍，魔幻相册，随心编辑；双摄像头，炫我自拍，魔幻相册，随心编辑；快捷短信操作功能 Slidetouch分屏菜单分屏菜单,Widget便捷应用；便捷应用；分屏菜单便捷应用英语学习机功能
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手机工坊充值券
济南晨曙赵军山东版
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开心田园趣味待机
操作方法：操作方法：
1、待机下，点按手机桌面，即可弹出图片框（如图1），通过图片框中的左右键，选择“田园物语” 图标，并将其拖至桌面，点击“田园物语”图标，就可进入图3所示的界面。
图1
图2
2、点击图3界面的右上角“设置”菜单，即可进入图2所示画面，可改变养成的动植物数量、天气状况、四季变化等。 3、通过点击动、植物图标，动物会发出叫声，植物会产生不同的表情。
目标人群对手机的关注点
注重手机内在品质，有突出的卖点，有个性，有新鲜的元素。
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Part 1 产品描述 Part 2 市场定位和目标人群 Part 3 核心卖点及讲解 Part 4 主要竞品对比 Part 5 推销方法 Part 6 主要参数 Part 7 细节规格说明 Part 8 疑难解答及术语解释

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