IRFU3910中文资料

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IR公司_大功率MOS管选型

I DContinuous Drain Current(A)70°Micro3Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLML2402*912570.54200.25 1.20.95230H1IRLML2803912580.54300.251.20.93230P-ChannelLogic LevelIRLML6302*912590.54-200.6-0.62-4.8230H1IRLML5103912600.54-300.6-0.61-4.8230* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro6Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLMS1902915401.7200.10 3.2 2.675H2IRLMS1503915081.7300.103.22.675P-ChannelLogic LevelIRLMS6702*914141.7-200.20-2.3-1.975H2IRLMS5703914131.7-300.20-2.3-1.975* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRF7601* 912611.820 0.035 5.7 4.6 70 H3IRF7603 912621.830 0.035 5.6 4.5 70Dual N-Channel Logic LevelIRF7501* 912651.220 0.135 2.4 1.9 100 H3IRF7503 912661.2530 0.135 2.4 1.9 100P-Channel Logic LevelIRF7604* 912631.8-20 0.09 -3.6 -2.9 70 H3IRF7606 912641.8-30 0.09 -3.6 -2.9 70Dual P-Channel Logic LevelIRF7504* 912671.25-20 0.27 -1.7 -1.4 100 H3IRF7506 912681.25-30 0.27 -1.7 -1.4 100Dual N- and P-Channel Logic LevelIRF7507* 912691.2520 0.1352.4 1.9 100 H3-20 0.27 -1.7 -1.4IRF7509 912701.2530 0.135 2.4 1.9 100-30 0.27 -1.7 -1.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRF7413913302.5300.011139.250H4IRF7413A 916132.5300.0135128.450IRF9410915622.5300.0375.850Dual N-ChannelIRF7311914352.0200.029 6.6 5.362.5H4IRF7313914802.0300.029 6.5 5.262.5IRF7333917002.0300.10 3.5 2.862.5917002.0300.050 4.9 3.962.5IRF9956915592.0300.103.52.862.5Dual P-ChannelIRF7314914352.0-200.058-5.3-4.362.5H4IRF7316915052.0-300.058-4.9-3.962.5IRF9953915602.0-300.25-2.3-1.862.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)Dual N- and P-ChannelIRF7317 915682.020 0.029 6.6 5.3 62.5 H42.0-20 0.058 -5.3 -4.3 62.5IRF9952 915622.030 0.103.5 2.8 62.5915622.0-30 0.25 -2.3 -1.8 62.5IRF7319 916062.030 0.029 6.5 5.2 62.52.0-30 0.058 -4.9 -3.9 62.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRF7401912442.5200.0228.77.050H4IRF7201911002.5300.0307.0 5.650IRF7403912452.5300.0228.55.450Dual N-ChannelLogic LevelIRF7101908712.0200.10 3.5 2.362.5H4IRF7301912382.0200.050 5.2 4.162.5IRF7303912392.0300.050 4.9 3.962.5IRF7103910952.0500.1303.02.362.5P-ChannelLogic LevelIRF7204911032.5-200.060-5.3-4.250H4IRF7404912462.5-200.040-6.7-5.450IRF7205911042.5-300.070-4.6-3.750IRF7406912472.5-300.045-5.8-3.750IRF7416913562.5-300.02-10-7.150* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)Dual P-ChannelLogic LevelIRF7104910962.0-200.250-2.3-1.862.5H4IRF7304912402.0-200.090-4.3-3.462.5IRF7306912412.0-300.10-3.6-2.962.5Dual N- and P-Channe Logic LevelIRF7307912421.4200.050 4.3 3.490H4-200.090-3.6-2.9IRF7105910972.0250.1093.5 2.862.52-250.25-2.3-1.862IRF7309912432.0300.050 4.9 3.962.5-300.10-3.6-2.9* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SOT-223Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFL4105913812.1550.045 3.7 3.060H6IRFL110908612.01000.54 1.50.9660IRFL4310913682.11000.20 1.6 1.360IRFL21090868 2.02001.50.960.660IRFL214908622.02502.00.790.560P-ChannelIRFL9110908642.0-1001.2-1.1-0.6960H6N-ChannelLogic LevelIRLL3303913792.1300.031 4.6 3.760H6IRLL014N 914992.1550.14 2.0 1.660IRLL2705913802.1550.043.83.060* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFR33039164257300.0313321 2.2H7IRFR024N9133638550.0751610 3.3IRFR41059130248550.0452516 2.7IRFR12059131869550.0273723 1.8IRFR11090524251000.54 4.3 2.75IRFR120N 91365391000.219.1 5.8 3.2IRFR391091364521000.11159.5 2.4IRFR2109052625200 1.5 2.6 1.75IRFR22090525422000.8 4.833IRFR21490703252502 2.2 1.45IRFR2249060042250 1.1 3.8 2.43IRFR3109059725400 3.6 1.7 1.15IRFR3209059842400 1.8 3.123IRFR42090599425003 2.4 1.53IRFRC2090637426004.421.33* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFR55059161057-550.11-18-11 2.2H7IRFR53059140289-550.065-28-18 1.4IRFR90149065425-600.5-5.1-3.25IRFR90249065542-600.28-8.8-5.63IRFR91109051925-100 1.2-3.1-25IRFR91209052042-1000.6-5.6-3.63IRFR9120N 9150739-1000.48-6.5-4.1 3.2IRFR92109052125-2003-1.9-1.25IRFR92209052242-200 1.5-3.6-2.33IRFR92149165850-250 3.0-2.7-1.7 2.5IRFR93109166350-4007.0-1.8-1.12.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLR27039133538300.0452214 3.3H7IRLR33039131657300.0313321 2.2IRLR31039133369300.0194629 1.8IRLR024N 9136338550.0651711 3.3IRLR27059131746550.042415 2.7IRLR29059133469550.0273623 1.8IRLR120N 91541391000.18511 6.9 3.2IRLR341091607521000.10159.52.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-ChannelIRFZ24NS 913554555 0.07 17 12 3.3 H10IRFZ34NS 913116855 0.04 29 20 2.2IRFZ44NS 9131511055 0.022 49 35 1.4IRFZ46NS 9130512055 0.020 53 37 1.3IRFZ48NS 9140814055 0.016 64 45 1.1IRF1010NS 913723.855 0.011 84 60 40IRF3205S 9130420055 0.008 110 80 0.75IRFZ44ES 9171411060 0.023 48 34 1.4IRF1010ES 9172017060 0.012 83 59 0.90IRF2807S 9151815075 0.013 71 50 1.0IRF520NS 9134047100 0.2 9.5 6.7 3.2IRF530NS 9135263100 0.11 15 11 2.4IRF540NS 91342110100 0.052 27 19 1.6IRF1310NS 91514120100 0.036 36 25 1.3IRF3710S 91310150100 0.028 46 33 1.0IRF3315S 9161794150 0.082 21 15 1.6IRF3415S 91509150150 0.042 37 26 1.0IRFBC20S 9.101450600 4.4 2.2 1.4 2.5IRFBC30S 9101574600 2.2 3.6 2.3 1.7IRFBC40S 91016130600 1.2 6.2 3.9 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemandNumberCase Outline KeyPart NumberP D Max.PowerDissipation (W)IRFBF20S 9166554900 8.0 1.7 1.1 2.3 H10P-ChannelIRF5305S 91386110-55 0.06 -31 -22 1.4 H10IRF4905S 914783.8-55 0.02 -74 -52 40IRF9520NS 9152247-100 0.48 -6.7 -4.8 3.2IRF9530NS 9152375-100 0.20 -14 -9.9 2.0IRF9540NS 9148394-100 0.117 -19 -13 1.6IRF5210S 91405150-100 0.06 -35 -25 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302S 916925720 0.020 39 25 2.2 H10IRL3202S916756920 0.016 48 30 1.8IRL3102S 916918920 0.013 61 39 1.4IRL3402S 9169311020 0.01 85 54 1.1IRL3502S 9167614020 0.007 110 67 0.89IRL2703S 913604530 0.04 24 17 3.3IRL3303S 913236830 0.026 38 27 2.2IRL3103S 9133811030 0.014 64 45 1.4IRL2203NS 9136717030 0.007 116 82 0.90IRL3803S 9131920030 0.006 140 98 0.75IRLZ24NS 913584555 0.06 18 13 3.3IRLZ34NS 913086855 0.035 30 21 2.2IRLZ44NS 9134711055 0.022 47 33 1.4IRL3705NS 9150217055 0.01 89 63 0.90IRL2505S 9132620055 0.008 104 74 0.75IRLZ44S 9090615060 0.028 50 36 1.0IRL530NS 9134963100 0.1 15 11 2.4IRL2910S 91376150100 0.026 48 34 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°SOT-227Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)RΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelFully Isolated Low ChargeFA38SA50LC 916155005000.1338240.25H21FA57SA50LC916506255000.0857360.20* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFU33039164257300.0313321 2.2H8IRFU024N 9133638550.0751610 3.3IRFU41059130248550.0452519 2.7IRFU12059131869550.0273723 1.8IRFU11090524251000.54 4.3 2.7 5.0IRFU120N 91365391000.219.1 5.8 3.2IRFU391091364521000.11159.5 2.4IRFU2109052625200 1.5 2.6 1.7 5.0IRFU22090525422000.80 4.8 3.0 3.0IRFU2149070325250 2.0 2.2 1.4 5.0IRFU2249060042250 1.1 3.8 2.4 3.0IRFU3109059725400 3.6 1.7 1.1 5.0IRFU3209059842400 1.8 3.1 2.0 3.0IRFU4209059942500 3.0 2.4 1.5 3.0IRFUC2090637426004.42.01.33.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFU55059161057-550.11-18-11 2.2H8IRFU53059140289-550.065-28-18 1.4IRFU90149065425-600.50-5.1-3.2 5.0IRFU90249065542-600.28-8.8-5.6 3.0IRFU91109051925-100 1.2-3.1-2.0 5.0IRFU91209052042-1000.60-5.6-3.6 3.0IRFU9120N 9150739-1000.48-6.5-4.1 3.2IRFU92109052125-200 3.0-1.9-1.2 5.0IRFU92209052242-200 1.5-3.6-2.3 3.0IRFU92149165850-2503.0-2.7-1.7 2.5IRFU93109166350-4007.0-1.8-1.12.5N-ChannelLogic LevelIRLU27039133538300.0452214 3.3H8IRLU33039131657300.0313321 2.2IRLU31039133369300.0194629 1.8IRLU024N 9136338550.0651711 3.3IRLU27059131746550.04241715IRLU29059133469550.0273623 1.8IRLU120N 91541391000.18511 6.9 3.2IRLU341091607521000.10159.52.4I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°HEXDIPThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFD014907001.3600.2 1.7 1.2120H9IRFD024906991.3600.1 2.5 1.8120IRFD110903281.31000.54 1.00.71120IRFD120903851.31000.27 1.30.94120IRFD210903861.3200 1.50.60.38120IRFD220904171.32000.80.80.50120IRFD214912711.3250 2.00.570.32120IRFD224912721.3250 1.10.760.43120IRFD310912251.3400 3.60.420.23120IRFD320912261.3400 1.80.600.33120IRFD420912271.3500 3.00.460.26120IRFDC20912281.36004.40.320.21120I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance(°C/W)1Faxon Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRF737LC91314743000.75 6.1** 1.7 3.9H11IRF740LC 910681254000.5510** 1.039IRF840LC 910691255000.858.0** 1.039IRFBC40LC910701256001.26.2**1.039I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFZ24N 9135445550.071712 3.3H12IRFZ34N9127656550.042618 2.7IRFZ44N 9130383550.0244129 1.8IRFZ46N 9127788550.024633 1.7IRFZ48N 9140694550.0165337 1.6IRF1010N 91278130550.0127251 1.2IRF320591279150550.0089869 1.0IRFZ34E 9167268600.0422820 2.2IRFZ44E 91671110600.0234834 1.4IRF1010E 91670170600.01281570.90IRF280791517150750.0137150 1.0IRF520N 91339471000.209.5 6.79.5IRF530N 91351601000.111511 2.4IRF540N 91341941000.0522719 1.6IRF1310N 916111201000.0363625 1.3IRF3710913091501000.0284633 1.0IRF331591623941500.0822115 1.6IRF3415914771501500.0423726 1.0IRFBC209062350600 4.4 2.2 1.4 2.5IRFBC309048274600 2.2 3.6 2.3 1.7IRFBC4090506125600 1.2 6.2 3.9 1.0IRFBE2090610548006.51.81.22.3I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFBE3090613125800 3.0 4.1 2.6 2.0H12IRFBF3090616125900 3.7 3.6 2.3 1.0IRFBG209060454100011 1.40.86 2.3IRFBG309062012510005.03.12.01.0P-ChannelIRF9Z24N 9148445-550.175-12-8.53.3H12IRF9Z34N 9148556-550.10-17-12 2.7IRF530591385110-550.06-31-22 1.4IRF490591280150-550.02-64-45 1.0IRF9530N 9148275-1000.20-13-9.2 2.0IRF9540N 9143794-1000.117-19-13 1.6IRF521091434150-1000.06-35-25 1.0IRF62159147983-1500.29-11-7.81.8I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302 916965720 0.020 39 25 2.2 H12IRL3202 916956920 0.016 48 30 1.8IRL3102 916948920 0.013 61 39 1.4IRL3402 9169711020 0.01 85 54 1.1IRL3502 9169814020 0.007 110 67 0.89IRL2703 913594530 0.04 24 17 3.3IRL3303 913225630 0.026 34 24 2.7IRL3103 913378330 0.014 56 40 1.8IRL2203N 9136613030 0.007 100 71 1.230 0.007 61 43 3.2IRL3803 9130115030 0.006 120 83 1.0IRLZ24N 913574555 0.06 18 13 3.3IRLZ34N 913075655 0.035 27 19 2.7IRLZ44N 913468355 0.022 41 29 1.8IRL3705N 9137013055 0.01 77 54 1.2IRL2505 9132520055 0.008 104 74 0.75IRL520N 9149447100 0.18 10 7.1 3.2IRL530N 9134863100 0.10 15 11 2.4IRL540N 9149594100 0.044 30 21 1.6IRL2910 91375150100 0.026 48 34 1.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220 FullPak (Fully Isolated)Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRFI740GLC91209404000.55 6.0** 3.139H13IRFI840GLC 91208405000.85 4.8** 3.139IRFIBC40GLC91211406001.24.0**3.139I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFIZ24N 9150126550.07139.2 5.8H14IRFIZ34N9148931550.041913 4.8IRFIZ44N 9140338550.02428200.024IRFIZ46N 9130640550.023122 3.8IRFIZ48N 9140742550.0163625 3.6IRFI1010N 9137347550.0124431 3.2IRFI32059137448550.0085640 3.1IRFIZ24E 9167329600.071149.6 5.2IRFIZ34E 9167437600.0422115 4.1IRFI510G 90829271000.54 4.5 3.2 5.5IRFI520N 91362271000.207.2 5.1 5.5IRFI530N 91353331000.11117.8 4.5IRFI540N 91361421000.0521813 3.6IRFI1310N 91611451000.0362216 3.3IRFI371091387481000.0252820 3.1IRFI620G 90832302000.8 4.1 2.6 4.1IRFI630G 90652322000.4 5.9 3.7 3.6IRFI640G 90649402000.189.8 6.2 3.1IRFI614G 9083123250 2.0 2.1 1.3 5.5IRFI624G 9083330250 1.1 3.4 2.2 4.1IRFI634G 90738322500.45 5.6 3.5 3.6IRFI644G 90739402500.287.953.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFI720G 9083430400 1.8 2.6 1.7 4.1H14IRFI730G 9065032400 1.0 3.7 2.3 3.6IRFI740G 90651404000.55 5.4 3.4 3.1IRFI734G 9100135450 1.2 3.4 2.1 3.6IRFI744G 91002404500.63 4.9 3.1 3.1IRFI820G 9064130500 3.0 2.1 1.3 4.1IRFI830G 9064632500 1.5 3.12 3.6IRFI840G 90642405000.85 4.6 2.9 3.1IRFIBC20G 90850306004.41.71.1 4.1IRFIBC30G 90851356002.2 2.5 1.63.6IRFIBC40G 9085240600 1.2 3.5 2.2 3.1IRFIBE20G 9085330800 6.5 1.4.86 4.1IRFIBE30G 9085435800 3.0 2.1 1.4 3.6IRFIBF20G 90855309008.0 1.2.79 4.1IRFIBF30G90856359003.71.91.23.6P-ChannelIRFI9Z24N 9152929-550.175-9.5-6.7 5.2H14IRFI9Z34N 9153037-550.10-14-10 4.1IRFI49059152663-550.02-41-29 2.4IRFI9540G 9083742-1000.117-13-9.2 3.6IRFI9540N 9148742-1000.117-13-9.2 3.6IRFI52109140448-1000.06-20-14 3.1IRFI9634G 9148835-2501.0-4.1-2.63.6I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLI2203N 9137847300.0076143 3.2H14IRLI38039132048300.0066747 3.1IRLIZ24N 9134426550.06149.9 5.8IRLIZ34N 9132931550.0352014 4.8IRLIZ44N 9149838550.0222820 4.0IRLI3705N 9136947550.014733 3.2IRLI25059132763550.00858412.4IRLI520N 91496271000.187.7 5.4 5.5IRLI530N 91350331000.10117.8 4.5IRLI540N 91497421000.04420143.6IRLI291091384481000.02627193.1P-ChannelLogic LevelIRFI9520G 9083537-1000.6-5.2-3.6 4.1H14IRFI9530G 9083638-1000.03-7.7-5.4 3.6IRFI9620G 9087430-200 1.5-3.0-1.9 4.1IRFI9630G 9083840-2000.8-4.3-2.7 3.6IRFI9640G9083940-2000.5-6.1-3.93.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-247Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)1N-ChannelLow ChargeIRFP350LC912291904000.3018**0.6570H16IRFP360LC 912302804000.2023**0.4598IRFP450LC 912311905000.4016**0.6570IRFP460LC 912322805000.2720**0.4598IRFPC50LC 912331906000.6013**0.6570IRFPC60LC912342806000.4016**0.4598I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not rated。

NRLF391M400V25X20F中文资料

147®NIC COMPONENTS CORP. www www www www Large Can Aluminum Electrolytic CapacitorsFEATURES• LOW PROFILE (20mm HEIGHT)• LOW DISSIPATION FACTOR AND LOW ESR • HIGH RIPPLE CURRENT • WIDE CV SELECTION• SUITABLE FOR SWITCHING POWER SUPPLIES NRLF SeriesSPECIFICATIONSMECHANICAL CHARACTERISTICS:1. Safety Vent:: The capacitors are provided with a pressure sensitive safety vent on the top. The vent is designed torupture in the event that high internal gas pressure is developed by circuit mal f unc t ion or mis-use like reverse voltage.2. Terminal Strength: Each terminal of the capacitor shall withstand an axial pull force of 4.5Kg for a period 10 seconds or a radial bent force of 2.5Kg for a period of 30 seconds.Notice for MountingThe space from the top of the can shall be more than (3mm) from chassis or other construction materials so that safety vent has room to expand in case of emer g en c y.Sleeve Color: Dark BlueCan Top Safety VentInsulation Sleeve and Minus Polarity Marking(4.0mm Leads Available As Option)D+1Max.L ± 26.3 ± 10.810(-)(+)MAXIMUM EX P AN S IONFOR SAFETY VENT Approx. 3.0mmPC Board Mounting Holes:10 ± .1∅= 2 ± 0.1D ∅ ± 0.5PC BoardOperating Temperature Range-40 ~ +85°C-25 ~ +85°C Rated Voltage Range 16 ~ 250Vdc 350 ~ 450Vdc Rated Capacitance Range 100 ~ 15,000µF33 ~ 150µFCapacitance Tolerance ±20% (M)Max. Leakage Current (µA)After 5 minutes (20°C)3 x C(µF)VMax. Tan δat 120Hz/20°C W.V. (Vdc)162535506380100160~450Tan δ max.0.500.400.350.300.250.200.200.15Surge VoltageW.V. (Vdc)162535506380100160S.V. (Vdc)2032446379100125200W.V. (Vdc)180200250350400450--S.V. (Vdc)220250300400450500--Ripple CurrentCorrection FactorsFrequency (Hz)50601001205001K 10K ~ 50K -Multiplier at 85°C 16 ~ 100Vdc 0.930.950.99 1.00 1.05 1.08 1.15-160 ~ 450Vdc 0.750.800.95 1.0 1.20 1.25 1.40Low TemperatureStability (16 to 250Vdc)Temperature (°C)0-25-40-----Capacitance Change-5%-10-30%-----Impedance Ratio 1.539-----Load Life Test2,000 hours at +85°CCapacitance ChangeWithin ±20% of initial measured value Tan δLess than 200% of speciﬁ ed maximum valueLeakage Current Less than speciﬁ ed maximum value Shelf Life Test1,000 hours at +85°C (no load)Capacitance Change Within ±20% of initial measured value Tan δLess than 200% of speciﬁ ed maximum valueLeakage Current Less than speciﬁ ed maximum value Surge Voltage Test Per JIS-C-5141 (table #6, #4)Surge voltage applied: 30 seconds"On" and 5.5 minutes no voltage "Off"Capacitance Change Within ±20% of initial measured value Tan δLess than 200% of speciﬁ ed maximum valueLeakage Current Less than speciﬁ ed maximum value Soldering EffectRefer to MIL-STD-202F Method 210A Capacitance Change Within ±10% of initial measured valueTan δLess than speciﬁ ed maximum value Leakage Current Less than speciﬁ ed maximum valuePRECAUTIONSPlease review the notes on correct use, safety and precautions found on pages T10 & T11of NIC’s Electrolytic Capacitor catalog . Also found at /precautionsIf in doubt or uncertainty, please review your speci ﬁ c application - process details withNIC’s technical support personnel: tpmg@RoHS Compliantincludes all homogeneous materials*See Part Number System for Details148Large Can Aluminum Electrolytic CapacitorsNRLF SeriesNRLF 152 M 50V 22X20 FRoHS compliant Case Size (mm) Voltage Rating Tolerance Code Capacitance Code SeriesPART NUMBER SYSTEM。

FLIR i40 红外热像仪—美国FLIR

F L I R i40红外热像仪—美国F L I R官网：/具体说明：美国FLIR i40 红外热像仪简介：热成像红外热像仪带有画中画功能的内置高分辨率可见光数码相机价格经济的FLIR#8482; i60系列产品是为内部猜测性维护、一般工廠电气及机械檢測而打造。

它将故障连接快速隔离，对电动机和承轴进行分析，检测建筑泄漏。

在故障发生前就获得有说服力的检测结果!全新i40，i50和i60热成像仪是同类产品中最好的，其各方面的特点均优于竞争对手：∙红外成像，具有画中画图像合并功能的内置可见光数码相机，因此可以看到一个叠加在可见光图像中的红外图像。

∙精度高，由于可调节的发射率和优于0.1°C的热灵敏度提供了更加快速而便捷地寻找题目所需的分辨能力，这在丈量温度敏感的设备的阈值温度时是至关重要的。

∙ 3.5寸大彩色液晶显示屏，高解析度红外图像。

∙缩略图图像集帮助你快速观察和寻找红外图像。

∙仪器坚固耐用，便于抓握的把手结构达到IP54防尘/防溅标准。

∙内置的LocatIR#8482;激光指示器帮助你快速地将红外图像上的热门与真实的物理目标相联系，从而大大地增强了定位能力(仅限于i50 和 i60)。

∙存储1000多张全辐射)(已获得专利权)JPEG格式图像。

使用随机配备的Quickreport#8482;软件，可以对每个图像的全部热成像像素进行分析。

∙电池寿命长，可连续使用5个小时。

∙显示丈量模式包括点(中心)和区域(最低/最高)。

∙配有 1 G micro型SD卡，可充电锂离子电池，交流适配器，Quick Report软件，USB电缆，镜头盖，腕带和便携箱。

美国FLIRi40 红外热像仪具体参数：相关热像仪产品先容如下：1.T400红外热像仪--美国FLIR2.i5 红外热像仪--美国FLIR3.i7 热像仪--美国FLIR4.i50 红外热像仪--美国FLIR5.i60 红外热成像仪--美国FLIR6.T200红外热像仪--美国FLIR7.Ti50热成像仪--美国福禄克Fluke8.Ti25热像仪--美国福禄克FLUKE9.E320经济型便携式红外热像仪--美国FLIR10.E65 红外热像仪--美国FLIR11.T360 红外热像仪--美国FLIR12.T250 红外热像仪--美国FLIR其它设备诊断仪器如下：噪音计/分贝仪、测振仪、红外线测温仪、人体测温仪、转速表、频闪仪、热像仪、通讯检测仪器、数字式压力计。

纳普尔顿电子火场系列电子火场产品说明书

installation” section in your manual). 7. Apply shims (not supplied) between the appliance and the frame. 8. Use 4 screws to secure the appliance into the wall (FIG. 5). Do not overtighten screws.
Framing
Measurements from body of appliance:
Sides, Back, Top
0”
FINISHING MATERIAL
Mantel 8" (203mm)
Mantel 8" (203mm)
A B
0"
A B
JUNCTION BOX
Wall
0"
Floor Side View (Wall Mount)
4 1/2
48 1/2 x 11 1/16
60 3/16 60 11/16 15 7/8 16 1/8 4 1/4
4 1/2
58 5/16 x 11 1/16
74 5/16 F7R4OF1NR3OT/1NV6ITEVW1IE5W7/8 R1I6GR1H/IG8THSTIDSE4IDV1E/IE4VWIEW 4 1/2TOTPOVPIEV7W2IE1W/2 x 11 1/16
9000 9000 9000 9000 9000 5000 5000 5000 5000
Width
Height
Depth
Actual Framing Actual Framing Actual Framing
Viewing Area

IRFU020中文资料

IRFU020中文资料Power MOSFETIRFR020, IRFU020, SiHFR020, SiHFU020Vishay SiliconixFEATURESDynamic dV/dt RatingSurface Mount (IRFR020/SiHFR020)?Available in Tape and Reel ?Fast SwitchingEase of Paralleling ?Simple Drive RequirementsLead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.Notea.See device orientation.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 25 V, starting T J = 25 °C, L = 541 μH, R G = 25 Ω, I AS = 14 A (see fig. 12).c.I SD ≤ 17 A, dI/dt ≤ 110 A/μs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.e.When mounted on 1" square PCB (FR-4 or G-10 material).PRODUCT SUMMARYV DS (V)60R DS(on) (Ω)V GS = 10 V0.10Q g (Max.) (nC)25Q gs (nC) 5.8Q gd (nC)11ConfigurationSingleORDERING INFORMATIONPackage DPAK (TO-252)DPAK (TO-252)IPAK (TO-251)Lead (Pb)-free IRFR020PbF IRFR020TRPbF a IRFU020PbFSiHFR020-E3SiHFR020T-E3a SiHFU020-E3SnPbIRFR020IRFR020TR a IRFU020SiHFR020SiHFR020T aSiHFU020ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedPARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS60VGate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 VT C = 25 °C I D14A T C = 100 °C9.0Pulsed Drain Current a I DM 56Linear Derating Factor0.33W/°C Linear Derating Factor (PCB Mount)e 0.020Single Pulse Avalanche Energy b E AS 91mJ Maximum Power Dissipation T C = 25 °C P D42WMaximum Power Dissipation (PCB Mount)e T A = 25 °C2.5Peak Diode Recovery dV/dt cdV/dt 5.5V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°CSoldering Recommendations (Peak Temperature)for 10 s260d* Pb containing terminations are not RoHS compliant, exemptions may applyIRFR020, IRFU020, SiHFR020, SiHFU020Vishay SiliconixNotea.When mounted on 1" square PCB (FR-4 or G-10 material).Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSPARAMETERYMBOL MIN.TYP.MAX.UNITMaximum Junction-to-Ambient R thJA --110°C/W MaximumJunction-to-Ambient (PCB Mount)aR thJA --50Maximum Junction-to-Case (Drain) R thJC-- 3.0IRFR020, IRFU020, SiHFR020, SiHFU020Vishay SiliconixFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRFR020, IRFU020, SiHFR020, SiHFU020Vishay SiliconixFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test CircuitIRFR020, IRFU020, SiHFR020, SiHFU020Vishay Siliconix Array Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several q ualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?90335.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms andconditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。

华为AAU3910 产品概述-天线

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华为技术有限公司地址：深圳市龙岗区坂田华为总部办公楼邮编：518129网址：客户服务邮箱：support@客户服务电话：4008302118AAU3910概述目录目录1 概述 (1)1.1 外观 (1)1.2 物理接口 (2)2 技术指标 (4)2.1 频段 (4)2.2 容量 (4)2.3 接收灵敏度 (5)2.4 EIRP (5)2.5 功耗 (5)2.6 电源 (6)2.7 风阻 (6)2.8 整机规格 (6)2.9 环境指标 (6)3 缩略语表 (8)1 概述多年以来，基站的架构正在发生不断的变化。

相比于RFU模块，华为创新提出的RRU解决方案，支持近天线安装，降低约3dB的馈线损耗的同时还可降低发射功率，提升网络覆盖率。

射频模块的功能向天线上移，已经成为业界的一种趋势，当前越来越多的运营商选择全网使用RRU解决方案。

AAS有源天线系统（Active Antenna System）是继RFU、RRU之后衍生出的一种新型射频模块形态。

其主要特征在于AAS将原有的RRU单元功能和天线的功能合并，简化站点资源；另外采用射频多通道技术对天线阵列进行控制，通过不同波束赋形的方式可以达到改善无线信号覆盖质量以及提升网络容量的目的。

IRFR3910中文资料

IRFR/U3910HEXFET ®Power MOSFETDescription5/11/98ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 16I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12A I DMPulsed Drain Current 60P D @T C = 25°C Power Dissipation 79W Linear Derating Factor 0.53W/°C V GS Gate-to-Source Voltage± 20V E AS Single Pulse Avalanche Energy 150mJ I AR Avalanche Current9.0A E AR Repetitive Avalanche Energy 7.9mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CAbsolute Maximum RatingsParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.9R θJA Junction-to-Ambient (PCB mount) **–––50°C/WR θJAJunction-to-Ambient–––110Thermal ResistanceD -P AK T O -252AAI-PA K TO -251AAlUltra Low On-Resistance l Surface Mount (IRFR3910)l Straight Lead (IRFU3910)l Advanced Process Technology l Fast Switchingl Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.PD - 91364BIRFR/U3910IRFR/U3910IRFR/U3910IRFR/U3910IRFR/U3910IRFR/U3910IRFR/U3910IRFR/U3910IRFR/U3910。

IRFR场效应管

IRFR-IRHM器件索引∙IRFR3410(Power MOSFET)∙IRFR3411(HEXFET Power MOSFET)∙IRFR3412(SMPS MOSFET)∙IRFR3418(HEXFET Power MOSFET)∙IRFR3504(AUTOMOTIVE MOSFET)∙IRFR3504PbF(AUTOMOTIVE MOSFET)∙IRFR3505(AUTOMOTIVE MOSFET)∙IRFR3518(HEXFET Power MOSFET)∙IRFR3704(Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A ))∙IRFR3704Z(HEXFET Power MOSFET)∙IRFR3706(Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A ))∙IRFR3707(Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A ))∙IRFR3707Z(HEXFET Power MOSFET)∙IRFR3707ZPBF(HEXFET Power MOSFET)∙IRFR3708(Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A ))∙IRFR3709Z(HEXFET Power MOSFET)∙IRFR3710Z(Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi)∙IRFR3711(Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A ))∙IRFR3910(Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A))∙IRFR3911(SMPS MOSFET)∙IRFR410(1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs)∙IRFR4104(Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A))∙IRFR4105(Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A ))∙IRFR4105Z(Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A))∙IRFR410B(500V N-Channel MOSFET)∙IRFR420(Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A))∙IRFR420(2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs)∙IRFR420A(SMPS MOSFET)∙IRFR420B(500V N-Channel MOSFET)∙IRFR430A(SMPS MOSFET)∙IRFR430B(500V N-Channel MOSFET)∙IRFR48Z(AUTOMOTIVE MOSFET)∙IRFR48ZPBF(AUTOMOTIVE MOSFET)∙IRFR5305(Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A))∙IRFR5410(Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A))∙IRFR5505(Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A))∙IRFR6215(Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A))∙IRFR9010(P-CHANNEL POWER MOSFETS)∙IRFR9014(Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A))∙IRFR9014TRL(HEXFET Power MOSFET)∙IRFR9020(REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS)∙IRFR9024(P-Channel Enhancement Mode Field Effect Transistor)∙IRFR9024(Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A))∙IRFR9024N(Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A))∙IRFR9110(3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs)∙IRFR9110TRL(Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A))∙IRFR9120(Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A))∙IRFR9120(5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs)∙IRFR9120N(Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A))∙IRFR9210(Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A))∙IRFR9214(Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A))∙IRFR9220(3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs)∙IRFR9220(Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A))∙IRFR9310(Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A))∙IRFR9N20D(Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A))∙IRFRC20(Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A))∙IRFS11N50A(SMPS MOSFET)∙IRFS140A(Advanced Power MOSFET)∙IRFS150A(Advanced Power MOSFET)∙IRFS240B(200V N-Channel MOSFET)∙IRFS244B(250V N-Channel MOSFET)∙IRFS250(200V N-Channel MOSFET)∙IRFS254B(250V N-Channel MOSFET)∙IRFS3306PBF(High Efficiency Synchronous Rectification in SMPS)∙IRFS340A(Advanced Power Mosfet)∙IRFS340B(400V N-Channel MOSFET)∙IRFS350A(Advanced Power MOSFET)∙IRFS4227PBF(PDP SWITCH)∙IRFS440A(Advanced Powre MOSFET)∙IRFS440B(500V N-Channel MOSFET)∙IRFS450(500V N-Channel MOSFET)∙IRFS510(Advanced Power MOSFET)∙IRFS520A(Advanced Power MOSFET)∙IRFS530(Advanced Power MOSFET)∙IRFS540(Advanced Power MOSFET)∙IRFS550A(Advanced Power MOSFET)∙IRFS610A(Advenced Power MOSFET (N-CHANNEL))∙IRFS630A(Advanced Power MOSFET)∙IRFS634A(Advanced Power MOSEFT)∙IRFS640(Improved inductive ruggedness)∙IRFS640(200V N-Channel MOSFET)∙IRFS640A(Rugged Gate Oxide Technology)∙IRFS650A(Advanced Power MOSFET)∙IRFS650B(200V N-Channel MOSFET)∙IRFS720(400V N-Channel MOSFET)∙IRFS730A(Advanced Power MOSFET)∙IRFS750(Advanced Power MOSFET)∙IRFS820A(Advanced Power MOSFET)∙IRFS840(500V N-Channel MOSFET)∙IRFS840A(Advanced Power MOSFET)∙IRFS9N60A(SMPS MOSFET)∙IRFSL11N50A(HEXFET Power MOSFET)∙IRFSL9N60A(SMPS MOSFET)∙IRFU1N60A(SMPS MOSFET)∙IRFU3504Z(AUTOMOTIVE MOSFET)∙IRFU9210N(HEXFET Power MOSFET)∙IRFV064(HEXFET TRANSISTOR, N-CHANNEL)∙IRFV260(TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*))∙IRFV360(REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR)∙IRFV460(REPETITIVE AVALANCHE RATED AND dv/dt RATED)∙IRFW510A(Advanced Power MOSFET)∙IRFW710(400V N-Channel MOSFET)∙IRFW720(400V N-Channel MOSFET)∙IRFW730(400V N-Channel MOSFET)∙IRFW740(400V N-Channel MOSFET)∙IRFW840(500V N-Channel MOSFET)∙IRFWI530A(Advanced Power MOSFET)∙IRFY044(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY044C(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY044CM(POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=16A*))∙IRFY120(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY130(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY130CM(POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A))∙IRFY1310M-T257(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY140(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY140C(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY140CM(POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A))∙IRFY230(N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS)∙IRFY240(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY240CM(POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A))∙IRFY330(N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package)∙IRFY340(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY340CM(POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=8.7A))∙IRFY430(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY430CM(POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A))∙IRFY430M-T257(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY440CM(POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A))∙IRFY9120(P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package)∙IRFY9130(P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY9130CM(POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A))∙IRFY9140(P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY9140C(P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY9140CM(POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A))∙IRFY9230(P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY9240(POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A))∙IRFZ10(HEXFETR POWER MOSFET)∙IRFZ14(HEXFET Power MOSFET)∙IRFZ20(HEXFET TRANSISTORS)∙IRFZ24L(HEXFET Power MOSFET)∙IRFZ24N(Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A))∙IRFZ24N(N-channel enhancement mode TrenchMOS transistor)∙IRFZ24NL(Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A))∙IRFZ24NLPBF(HEXFET Power MOSFET)∙IRFZ24V(Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A))∙IRFZ34(Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A))∙IRFZ34E(HEXFET POWER MOSFET)∙IRFZ34L(HEXFET Power MOSFET)∙IRFZ34NLPbF(HEXFET Power MOSFET)∙IRFZ34NS(HEXFET㈢ Power MOSFET)∙IRFZ34VL(Advanced Process Technology)∙IRFZ34VLPbF(HEXFET Power MOSFET)∙IRFZ40(N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS)∙IRFZ40(N-CHANNEL POWER MOSFETS)∙IRFZ42(Power Field Effect Transistors)∙IRFZ44(Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A))∙IRFZ44(N-channel enhancement mode TrenchMOS transistor)∙IRFZ44E(Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A))∙IRFZ44EL(Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A))∙IRFZ44L(HEXFET Power MOSFET)∙IRFZ44NL(Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A))∙IRFZ44NPBF(HEXFET-R Power MOSFET)∙IRFZ44NS(N-channel enhancement mode TrenchMOS transistor)∙IRFZ44R(Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A))∙IRFZ44V(Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A))∙IRFZ44VPBF(Ultra Low On-Resistance)∙IRFZ44VS(Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A))∙IRFZ44VZL(Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A))∙IRFZ44Z(Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A))∙IRFZ46(Power MOSFET(Vdss=50V, Rds(on)=0.024ohm, Id=50*A))∙IRFZ46N(Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A))∙IRFZ46NL(HEXFET POWER MOSFET)∙IRFZ46S(HEXFET Power MOSFET)∙IRFZ46ZS(AUTOMOTIVE MOSFET)∙IRFZ48(Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A))∙IRFZ48(N-channel enhancement mode TrenchMOS transistor)∙IRFZ48L(HEXFET Power MOSFET)∙IRFZ48NL(Advanced Process Technology)∙IRFZ48V(Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A))∙IRFZ48VS(Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A))∙IRFZ48Z(AUTOMOTIVE MOSFET)∙IRFZ48ZLPBF(AUTOMOTIVE MOSFET)∙IRG4BC10K(Short Circuit Rated UltraFast IGBT)∙IRG4BC10KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A))∙IRG4BC10S(INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A))∙IRG4BC10SD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V,Ic=2.0A))∙IRG4BC10UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A))∙IRG4BC15MD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A))∙IRG4BC15UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A))∙IRG4BC15UD-L(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V,Ic=7.8A))∙IRG4BC20F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A))∙IRG4BC20FD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A))∙IRG4BC20FD-STRL(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A))∙IRG4BC20K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A))∙IRG4BC20KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A))∙IRG4BC20KD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V,Ic=9.0A))∙IRG4BC20K-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A))∙IRG4BC20MD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A))∙IRG4BC20MD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V,Ic=11A))∙IRG4BC20S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A))∙IRG4BC20SD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A))∙IRG4BC20SD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A))∙IRG4BC20U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A))∙IRG4BC20UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A))∙IRG4BC20UD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V,Ic=6.5A))∙IRG4BC20W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A))∙IRG4BC20WS(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A))∙IRG4BC30(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A))∙IRG4BC30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A))∙IRG4BC30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4BC30KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4BC30KD-STRR(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4BC30K-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4BC30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A))∙IRG4BC30S-S(INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A))∙IRG4BC30U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A))∙IRG4BC30UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A))∙IRG4BC30U-S(INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A))∙IRG4BC30U-SPBF(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4BC30W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A))∙IRG4BC30WS(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A))∙IRG4BC30W-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A))∙IRG4BC30W-SPBF(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4BC40F(INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A))∙IRG4BC40K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A))∙IRG4BC40S(INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A))∙IRG4BC40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A))∙IRG4BC40W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A))∙IRG4BH20K-L(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4BH20K-S(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4CC71KB(IRG4CC71KB IGBT Die in Wafer Form)∙IRG4IBC10UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20FD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20FDPBF(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20W(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4IBC30F(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC30KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC30S(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4IBC30UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙irg4ibc30w(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4IBC30WPBF(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4MC50F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4MC50U(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4P254S(INSULATED GATE BIPOLAR TRANSISOR)∙IRG4PC30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A))∙IRG4PC30FD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A))∙IRG4PC30K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4PC30KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4PC30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A))∙IRG4PC30U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A))∙IRG4PC30UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A))∙IRG4PC30W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A))∙IRG4PC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A))∙IRG4PC40(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A))∙IRG4PC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A))∙IRG4PC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A))∙IRG4PC40K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A))∙IRG4PC40KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A))∙IRG4PC40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A))∙IRG4PC40UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A))∙IRG4PC50F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A))∙IRG4PC50FD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A))∙IRG4PC50K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A))∙IRG4PC50KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.84V, @Vge=15V, Ic=30A))∙IRG4PC50S(INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A))∙IRG4PC50U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A))∙IRG4PC50UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A))∙IRG4PC50W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A))∙IRG4PC60F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4PC60U( INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4PF50W(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4PF50WD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PF50WPBF(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4PH20(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A))∙IRG4PH20KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V,Ic=5.0A))∙IRG4PH30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A))∙IRG4PH30(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A))∙IRG4PH40K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A))∙IRG4PH40KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A))∙IRG4PH40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A))∙IRG4PH40UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A))∙IRG4PH40UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PH40UD2-E(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PH40UD2-EP(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PH40UD2PBF(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PH50(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A))∙IRG4PH50K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A))∙IRG4PH50KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A))∙IRG4PH50S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A))∙IRG4PH50U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A))∙IRG4PSC71K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A))∙IRG4PSC71KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.83V, @Vge=15V, Ic=60A))∙IRG4PSC71U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A))∙IRG4PSC71UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A))∙IRG4PSH71(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A))∙IRG4PSH71(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A))∙IRG4PSH71U(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4RC10(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A))∙IRG4RC10(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A))∙IRG4RC10(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A))∙IRG4RC10SD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A))∙IRG4RC10U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A))∙IRG4RC10UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A))∙IRG4RC20F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A))∙IRG4ZC70UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4ZH50KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB10B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB14C40L(IGBT with on-chip Gate-Emitter and Gate-Collector clamps)∙IRGB15B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB20B60PD1(SMPS IGBT)∙IRGB30B60K(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGB4055PBF(Advanced Trench IGBT Technology)∙IRGB420(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A))∙IRGB420UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V,Ic=7.5A))∙IRGB430(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A))∙IRGB430UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A))∙IRGB440U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A))∙IRGB5B120KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB6B60K(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGB6B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB8B60K(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGBC20(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A))∙IRGBC20FD2(IRGBC20FD2)∙IRGBC20K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A))∙IRGBC20KD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.0A))∙IRGBC20K-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A))∙IRGBC20M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGBC20MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGBC20MD2-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGBC20M-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGBC20S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A))∙IRGBC20SD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A))∙IRGBC20U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A))∙IRGBC20UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.5A))∙IRGBC30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A))∙IRGBC30FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A))∙IRGBC30K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A))∙IRGBC30K-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A))∙IRGBC30M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A))∙IRGBC30MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A))∙IRGBC30MD2-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A))∙IRGBC30M-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A))∙IRGBC30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A))∙IRGBC30U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A))∙IRGBC30UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A))∙IRGBC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A))∙IRGBC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A))∙IRGBC40M-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A))∙IRGBC40S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A))∙IRGBC40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A))∙IRGBF20(INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A))∙IRGBF30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A))∙IRGI4065PBF(PDP TRENCH IGBT)∙IRGIB10B60KD1(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGIB15B60KD1(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGIB6B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGIB7B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGIH50F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGKIN050M12(CHOPPER LOW SIDE SWITCH IGBT INTAPAK)∙IRGMC30F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGMC30U(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGMVC50U(INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE)∙IRGP20B120UD-E(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP20B120U-E(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGP20B60PD(WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP30B120KD-E(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP30B60KD-E(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP35B60PD(WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP4050(PDP Switch)∙IRGP420U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A))∙IRGP430U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A))∙IRGP430UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A))∙IRGP440U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A))∙IRGP440UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A))∙IRGP450U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=33A))∙IRGP450UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V, Ic=33A))∙IRGP50B60PD1(SMPS IGBT)∙IRGPC20F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A))∙IRGPC20M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGPC20MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGPC20U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A))∙IRGPC30F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGPC30FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=17A))∙IRGPC30K(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGPC30M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A))∙IRGPC30MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A))∙IRGPC30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A))∙IRGPC30U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A))∙IRGPC30UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A))∙IRGPC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A))∙IRGPC40FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A))∙IRGPC40M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A))∙IRGPC40MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A))∙IRGPC40S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A))∙IRGPC40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A))∙IRGPC40UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A))∙IRGPC50F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=39A))∙IRGPC50FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A))∙IRGPC50KD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGPC50M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=35A))∙IRGPC50MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=35A))∙IRGPC50S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=41A))∙IRGPC50UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A))∙IRGPF20F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=5.3A))∙IRGPF30F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A))∙IRGPF40F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V,@Vge=15V, Ic=17A))∙IRGPF50F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A))∙IRGPH20(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A))∙IRGPH20(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A))∙IRGPH30MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=9.0A))∙IRGPH30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=13A))∙IRGPH40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A))∙IRGPH40FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A))∙IRGPH40M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=18A))∙IRGPH40MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18A))∙IRGPH40S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=20A))∙IRGPH50(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A))∙IRGPH50FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A))∙IRGPH50M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A))∙IRGPH50MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=23A))∙IRGPH50S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=33A))∙IRGPS40B120U(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGPS60B120KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGR3B60KD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGS10B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGS4B60KD1(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRH3054(RADIATION HARDENED POWER MOSFET THRU-HOLE)。

MIC39100中文资料

元器件交易网 MIC39100/39101/39102
Micrel
MIC39100/39101/39102
1A Low-Voltage Low-Dropout Regulator
General Description
The MIC39100, MIC39101, and MIC39102 are 1A lowdropout linear voltage regulators that provide low-voltage, high-current output from an extremely small package. Utilizing Micrel’s proprietary Super βeta PNP™ pass element, the MIC39100/1/2 offers extremely low dropout (typically 410mV at 1A) and low ground current (typically 11mA at 1A). The MIC39100 is a fixed output regulator offered in the SOT-223 package. The MIC39101 and MIC39102 are fixed and adjustable regulators, respectively, in a thermally enhanced power 8-lead SOP (small outline package). The MIC39100/1/2 is ideal for PC add-in cards that need to convert from standard 5V to 3.3V, 3.3V to 2.5V or 2.5V to 1.8V. A guaranteed maximum dropout voltage of 630mV over all operating conditions allows the MIC39100/1/2 to provide 2.5V from a supply as low as 3.13V and 1.8V from a supply as low as 2.43V. The MIC39100/1/2 is fully protected with overcurrent limiting, thermal shutdown, and reversed-battery protection. Fixed voltages of 5.0V, 3.3V, 2.5V, and 1.8V are available on MIC39100/1 with adjustable output voltages to 1.24V on MIC39102.

IRFR5410中文资料

IRFR/U5410HEXFET ® Power MOSFET5/3/99ParameterTyp.Max.UnitsR q JC Junction-to-Case1.9R q JA Junction-to-Ambient (PCB mount)** 50°C/WR q JAJunction-to-Ambient110Thermal ResistanceD-Pak TO-252AAI-Pak TO-251AAl Ultra Low On-Resistance l P-Channell Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology l Fast SwitchinglFully Avalanche RatedDescriptionParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ -10V -13I D @ T C = 100°C Continuous Drain Current, V GS @ -10V -8.2A I DMPulsed Drain Current -52P D @T C = 25°C Power Dissipation 66W Linear Derating Factor 0.53W/°C V GS Gate-to-Source Voltage± 20V E A S Single Pulse Avalanche Energy 194mJ I AR Avalanche Current-8.4A E AR Repetitive Avalanche Energy 6.3mJ dv/dt Peak Diode Recovery dv/dt -5.0V/ns T J Operating Junction and-55 to + 150T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CAbsolute Maximum RatingsFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.PD - 9.1533AIRFR/U5410IRFR/U5410IRFR/U5410IRFR/U5410IRFR/U5410IRFR/U5410IRFR/U5410IRFR/U5410IRFR/U5410。

IRFR9120中文资料

S
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE)
4-83
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE™ is a trademark of MicroSim Corporation. or 407-727-9207 | Copyright © Intersil Corporation 1999
PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) SYMBOL VSD trr QRR ISD = -5.6A ISD = -6.8A, dISD/dt = -100A/µs TEST CONDITIONS MIN TYP 130 0.70 MAX -6.3 150 1.4 UNITS V ns µC
oC/W oC/W
Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current

LM39100中文资料

LM39100中⽂资料APPLICATIONSLDO linear regulator for PC add-in cardsPowerPC power suppliesHigh-efficiency linear power suppliesSMPS post regulatorMultimedia and PC processor suppliesBattery chargersLow-voltage microcontrollers and digital logic ORDERING INFORMATIONDESCRIPTION HTCConnect to resitive voltage-divider network GroundDeviceMarking Package PIN DESCRIPTION Enable (Input)IN CMOS-compatible control input.Logic high = enable, logic OUT FLG Regulator Output LM39100-X.X ADJGND Adjustment Input: Feedback input.Connect to resitive voltage-divider network LM39101-X.X LM39102-Adj LM39100-X.XSOT-223Logic low or open = shutdown Supply (Input)Flag (Output): Open-collector error flag output.LM39101-X.XSOP-8LM39102-Adj SOP-8* X.X = Fixed Vout = 1.5V, 1.8V, 2.5V, 3.3V, 5.0VThe LM39100, LM39101, and LM39102 are 1A low-dropout linear voltage regulators that provide low-voltage,high-current output from an extremely small package.The LM39100/1/2 offers extremely low dropout (typically 410mVat 1A) and low ground current (typically 12mA at 1A).The LM39100 is a fixed output regulator offered in theSOT-223 package. The LM39101 and LM39102 are fixedand adjustable regulators, respectively, in a thermally en-hanced power 8-lead SOP (small outline package).The LM39100/1/2 is ideal for PC add-in cards that need toconvert from standard 5V to 3.3V, 3.3V to 2.5V or 2.5V to1.8V. A guaranteed maximum dropout voltage of 630mV overall operating conditions allows the LM39100/1/2 to provide2.5V from a supply as low as 3.13V and 1.8V from a supplyas low as 2.43V.The LM39100/1/2 is fully protected with over current limiting,thermal shutdown, and reversed-battery protection. Fixed voltages of 5.0V, 3.3V, 2.5V,1.8V and 1.5V are available on LM39100/1 with adjustable output voltages to 1.24V on LM39102.Typical Application CircuitAbsolute Maximum Ratings (Note 1)Supply Voltage (VIN) –20V to +20VEnable Voltage (VEN) +20VStorage Temperature (TS) –65°C to +150°C Lead Temperature (soldering, 5 sec) 260°CESD, Note 3Operating Ratings (Note 2)Supply Voltage (VIN) +2.25V to +16V Enable Voltage (VEN) +16V Maximum Power Dissipation (PD(max)) Note 4Junction Temperature (TJ) –40°C to +125°C Package Thermal Resistance SOT-223 (θJC) 15°C/WSOP-8 (θJC) 20°C/WBlock DiagramLM39100 Fixed (1.5V,1.8V,2.5V,3.3V,5.0V)LM39100 Fixed with Flag and EnableLM39102 AdjustableTYPICAL PERFORMANCE CHARACTERISTICSAPPLICATION INFORMATIONThe LM39100/1/2 is a high-performance low-dropout voltage regulator suitable for moderate to high-current voltage regulator applications. Its 630mV dropout voltage at full loadand over temperature makes it especially valuable in battery-powered systems and as high-efficiency noise filters in post-regulator applications. Unlike older NPN-pass transistor de-signs, where the minimum dropout voltage is limited by thebase-to-emitter voltage dropand collector-to-emitter satura-tion voltage, dropout performance of the PNP output of these devices is limited only by the low V CE saturation voltage.A trade-off for the low dropout voltage is a varying base drive requirement.The LM39100/1/2 regulator is fully protected from damage due to fault conditions. Linear current limiting is provided.Output current during overload conditions is constant. Thermal shutdown disables the device when the die temperature exceeds the maximum safe operating temperature. Tran-sient protection allows device (and load) survival even when the input voltage spikes above and below nominal. The output structure of these regulators allows voltages in excess of the desired output voltage to be applied without reverse current flow.Output CapacitorThe LM39100/1/2 requires an output capacitor to maintain stability and improve transient response. Proper capacitor selection is important to ensure proper operation. The LM39100/1/2 output capacitor selection is dependent uponthe ESR (equivalent series resistance) of the output capacitor to maintain stability. When the output capacitor is 10µF orgreater, the output capacitor should have an ESR less than 2?. This will improve transient response as well as promote stability. Ultra-low-ESR capacitors (<100m?), such as ce-ramic chip capacitors, may promote instability. These very low ESR levels may cause an oscillation and/or underdamped transient response. A low-ESR solid tantalum capacitor works extremely well and provides good transient response and stability over temperature. Aluminum electrolytics can also be used, as long as the ESR of the capacitor is <2?.The value of the output capacitor can be increased without limit. Higher capacitance values help to improve transient response and ripple rejection and reduce output noise.Input CapacitorAn input capacitor of 1µF or greater is recommended whenthe device is more than 4 inches away from the bulk ac supply capacitance or when the supply is a battery. Small, surfacemount, ceramic chip capacitors can be used for bypassing. Larger values will help to improve ripple rejection by bypassing the input to the regulator, furtherimproving the integrity of the output voltage.Error FlagThe LM39101 features an error flag (FLG), which monitors the output voltage and signals an error condition when this voltage drops 5% below its expected value. The error flag isan open-collector output that pulls low under fault conditions and may sink up to 10mA. Low output voltage signifies anumber of possible problems, including an overcurrent fault(the device is in current limit) or low input voltage. The flag output is inoperative during overtemperature conditions. Apull-up resistor from FLG to either VIN or VOUT is required for proper operation. For information regarding the minimum and maximum values of pull-up resistance, refer to the graph in the typical characteristics section of the data sheet.Enable InputThe LM39101 and LM39102 versions feature an active-high enable input (EN) that allows on-off control of the regulator. Current drain reduces to “zero” when the device is shutdown, with only micro amperes of leakage current. The EN input has TTL/CMOS compatible thresholds for simple logic interfacing. EN may be directly tied to VIN and pulled upto the maximum supply voltageTransient Response and 3.3V to 2.5V or 2.5V to 1.8V ConversionThe LM39100/1/2 has excellent transient response to varia-tions in input voltage and load current. The device has been designed to respond quickly to load current variations and input voltage variations. Large output capacitors are not required to obtain this performance. A standard 10µF output capacitor, preferably tantalum, is all that is required. Larger values help to improve performance even further.By virtue of its low-dropout voltage, this device does not saturate into dropout as readily as similar NPN-based de-signs. When converting from 3.3V to 2.5V or 2.5V to 1.8V, the NPN based regulators are already operating in dropout, withtypical dropout requirements of 1.2V or greater. To convertdown to 2.5V or 1.8V without operating in dropout, NPN-based regulators require an input voltage of 3.7V at the veryleast. The LM39100 regulator will provide excellent perfor-mance with an input as low as 3.0V or 2.5V respectively. This gives the PNP based regulators a distinct advantage overolder, NPN based linear regulators.Minimum Load CurrentThe LM39100/1/2 regulator is specified between finite loads.If the output current is too small, leakage currents dominate and the output voltage rises. A 10mA minimum load current is necessary for proper regulation.Adjustable Regulator DesignThe LM39102 allows programming the output voltage any-where between 1.24V and the 16V maximum operating rating of the family. Two resistors are used. Resistors can be quite large, up to 1M?, because of the very high input impedance and low bias current of the sense comparator: The resistor values are calculated by :R1=R2(Vout/1.240-1)Where VO is the desired output voltage. Figure 1 shows component definition. Applications with widely varying load currents may scale the resistors to draw the minimum load current required for proper operation (see below).Power SOP-8 Thermal CharacteristicsOne of the secrets of the LM39101/2’s performance is its power SO-8 package featuring half the thermal resistance of a standard SO-8 package. Lower thermal resistance means more output current or higher input voltage for a given package size.Lower thermal resistance is achieved by joining the four ground leads with the die attach paddle to create a single-piece electrical and thermal conductor. This concept hasbeen used by MOSFET manufacturers for years, proving very reliable and cost effective for the user.Thermal resistance consists of two main elements, θJC(junction-to-case thermal resistance) and θCA (case-to-ambient thermal resistance). See Figure2. θJC is the resistance from the die to the leads of the package. θCA is the resistance from the leads to the ambient air and it includes θCS (case-to-sink thermal resistance) and θSA (sink-to-ambient thermal resistance).Using the power SOP-8 reduces the θJC dramatically and allows the user to reduce θCA. The total thermal resistance,θJA (junction-to-ambient thermal resistance) is the limiting factor in calculating the maximum power dissipation capabil-ity of the device. Typically, the power SOP-8 has a θJCof20°C/W, this is significantly lower than the standard SOP-8 which is typically 75°C/W. θCA is reduced because pins 5 through 8 can now be soldered directly to a ground plane which significantly reduces the case-to-sink thermal resis-tance and sink to ambient thermal resistance.Low-dropout linear regulators from HTC are rated to amaximum junction temperature of 125°C. It is important not to exceed this maximum junction temperature during operation of the device. To prevent this maximum junction temperature from being exceeded, the appropriate ground plane heatsink must be used.Figure3 shows copper area versus power dissipation with each trace corresponding to a different temperature rise above ambient.From these curves, the minimum area of copper necessary for the part to operate safely can be determined. The maxi-mum allow able temperature rise must be calculated to deter-mine operation along which curve.T = TJ(max) – TA(max)TJ(max) = 125°CTA(max) = maximum ambient operating temperatureFor example, the maximum ambient temperature is 50°C, the?T is determined as follows:T = 125°C – 50°CT = 75°CUsing Figure3, the minimum amount of required copper can be determined based on the required power dissipation.Power dissipation in a linear regulator is calculated as fol-lows:PD = (VIN – VOUT) IOUT + VIN·IGNDIf we use a 2.5V output device and a 3.3V input at an output current of 1A, then our power dissipation is as follows: PD = (3.3V – 2.5V) × 1A + 3.3V × 11mAPD = 800mW + 36mWPD = 836mWFrom Figure3, the minimum amount of copper required too perate this application at a ?T of 75°C is 160mm2. Quick Method Determine the power dissipation requirements for the design along with the maximum ambient temperature at which the device will be operated. Refer to Figure4, which shows safe operating curves for three different ambient temperatures:25°C, 50°C and 85°C. From these curves, the minimum amount of copper can be determined by knowing the maxi-mum power dissipation required. If the maximum ambient temperature is 50°C and the power dissipation is as above,836mW, the curve in Figure5 shows that the required area of copper is 160?.The θJA of this package is ideally 63°C/W, but it will vary depending upon the availability of copper ground plane to which it is attached.。

irisys iri 4010多用途热成像仪数据手册说明书

®Jan 2006IPU 40099 issue 1IRI 4010Multi-Purpose Thermal Imager© 2006 InfraRed Integrated Systems Limited (IRISYS). No part of this publication may be reproduced without prior permission in writing from InfraRed Integrated Systems Limited. This document gives only a general description of the product and except where expressly provided otherwise shall form no part of any contract. Whilst IRISYS endeavour to ensure that all descriptions, weights, temperatures, dimensions, and other statistics contained in this product information are correct, they are intended to give a general idea of the product only and IRISYS do not warrant their accuracy or accept liability for any reliance on them. IRISYS have a policy of continuous product improvement and reserve the right to change the specification of the products and descriptions in this data sheet. Prior to ordering products please check with IRISYS for current specification details. This product may be protected by patents RE36136, RE36706, US4752694, US5286976, US5300915, US5420419, US5895233 andUS5637871. All brands and product names are acknowledged and may be trademarks or registered trademarks of their respective holders.The IRI 4010 is an innovative thermal imager product which offers outstanding imaging and temperature measurement performance together with the traditional IRISYS features of flexibility, ease of use and minimal cost of ownership.IRISYS has produced an imager which is ideal for both the thermographer and maintenance engineer alike; high quality images may be captured and manipulated offline or problems can be resolved on the spot. The camera comes with an industry leading 3 ½” display and delivers both price and performance that’s unique to IRISYS.Typical applications for the IRI 4010 include:• Predictive and Preventative Maintenance –electrical and mechanical • Process Monitoring• HVAC & R Troubleshooting and Maintenance • General Industrial/Domestic • SecurityThe IRI 4010 Multi-PurposeThermal ImagerProduct DescriptionThe ergonomically designed imager houses the complete uncooled microbolometer-based camera core together with a long life Li-ion battery pack. For ease of use the image is displayed on a large 3½” colour LCD with LED backlight. Images can be captured using an MMC or SD card for recall and further analysis if required. Images can also be downloaded to a PC from the memory card for analysis, report generation and printing.OperationDesigned for self-contained use, the camera contains everything required by the maintenance engineer in the 21st Century. The high power, field replaceable, rechargeable Li-ion battery allows continuous operation for a full working shift. The IRI 4010 is fully radiometric; temperature measurements can be made over the entire image, and hot spots can also be identified by use of a trigger activated laser pointer.aHotshots in Thermal ImagingSPECIFICATIONPERFORMANCEField of view (FOV): 20o x 15o Focus: Manual Minimum Focus: 30cm Spectral Response: 8µm to 14µmThermal Sensitivity: 150mK @ 25 o C scene temperatureDetector: 160x120 pixels uncooled microbolometerIMAGE STORAGE Number: Up to 1000 images on SD card supplied Medium: MMC/SD cardDISPLAY3½” colour LCD with LED backlight 4 colour palettesLASER POINTERA built in Class 2 laser is supplied to highlight the central measurement areaMEASUREMENTTemperature range: -10 o C to +250 o CRadiometry: Two movable temperature measurement cursors Temperature difference measurement Emissivity Correction:User selectable 0.2 to 1.0 in steps of 0.01 with reflected ambient temperature compensation Accuracy: The greater of +2% of reading or +2 o CIMAGER POWER SUPPLYBattery: Lithium-ion field rechargeable, replaceable batteriesOperation time: 4 hours continuous operation AC operation: AC adaptor suppliedMECHANICALHousing: Impact Resistant Plastic Dimensions: 230mm x 120mm x 110mm Weight: 0.75kg including battery Mounting: Handheld & Tripod mountingIRI 4010 INCLUDESIR Camera, Battery, AC adaptor, USB Cable, user manual and software CD, carrying case, wrist strap , SD card and SD card reader.OPTIONAL ACCESSORIESR eport writing software; desktop charger; 12V car charger; additional battery; light shade.INTERFACESUSB type BSETTINGS AND CONTROLS• On/Off soft power control • User selectable span control • User selectable level control • Auto adjust span and level• Display palettes: rainbow, ironbow, high contrast and greyscale• Laser trigger switch • Readout in o C or o F• Image capture, time and date • 2 x digital zoomFEATURES• Real time image and temperature measurement display• Crisp high resolution images • Large 3 ½ inch display • Simple operation• Multiple temperature measurement• Multiple image storage and retrieval at full digital resolution• Image browser with full image adjustment • Battery Charge indicator • LightweightENVIRONMENTTemp. operating range: -15 o C to +45 o C Humidity: 10% to 90% non condensing Temp. storage range: -20 o C to +70 o C CE Mark (Europe)Use, duplication or disclosure of data contained on this sheet is subject to the restrictions on the front page of this document.InfraRed Integrated Systems Ltd, Towcester Mill,Towcester, Northants, NN12 6AD, UK Telephone: +44 (0) 1327 357824 Fax: +44 (0) 1327 357825 e-mail: ***************.uk web site: aHotshots inThermal Imaging。

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IRFR/U3910
HEXFET ®
Power MOSFET
Description
5/11/98
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 16I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12A I DM
Pulsed Drain Current 60P D @T C = 25°C Power Dissipation 79W Linear Derating Factor 0.53W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pulse Avalanche Energy 150mJ I AR Avalanche Current
9.0A E AR Repetitive Avalanche Energy 7.9mJ dv/dt Peak Diode Recovery dv/dt 5.0
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
––– 1.9R θJA Junction-to-Ambient (PCB mount) **–––50°C/W
R θJA
Junction-to-Ambient
–––
110
Thermal Resistance
D -P AK T O -252AA
I-PA K TO -251AA
l
Ultra Low On-Resistance l Surface Mount (IRFR3910)l Straight Lead (IRFU3910)
l Advanced Process Technology l Fast Switching
l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
PD - 91364B
IRFR/U3910
IRFR/U3910
IRFR/U3910
IRFR/U3910
IRFR/U3910
IRFR/U3910
IRFR/U3910
IRFR/U3910
IRFR/U3910。