2SB849中文资料
ER2J中文资料
M C C
omponents 21201 Itasca Street Chatsworth
!"# $
6
4
ER2A -2D
ER2M
2
Amps 1 .6 .4
.2 .1 .06 .04
.02 .01
.4
.8 1.2 1.6 2.0 2.4 Volts
Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts
ER2A ER2B ER2C ER2D ER2G ER2J ER2K
Device Marking
ER2A ER2B ER2C ER2D ER2G ER2J ER2K
Maximum Recurrent Peak Reverse Voltage
50V 100V 150V 200V 400V 600V 800V
Pulse Generator
Note 2
Oscilloscope Note 1
trr +0.5A
0 -0.25
-1.0 1cm
Set Time Base for 20/100ns/cm
Average Forward Current
Peak Forward Surge Current
Maximum Instantaneous Forward Voltage
ER2A-D ER2G-K
ER2M
Maximum DC Reverse Current At Rated DC Blocking Voltage
Trr
USCAR-2(中文第5版)-2009[1].03.17
![USCAR-2(中文第5版)-2009[1].03.17](https://img.taocdn.com/s3/m/6511d22804a1b0717ed5ddd1.png)
USCAR-2(中文第5版)-2009[1].03.17SAE international SAE/USCAR-2第5修订版颁布日期：1997年8月修订日期：2007年11月汽车电器连接器系统的性能标准目录1. 范围。
42. 概述及术语汇编。
52.1 总则。
43. 需要的参考文件。
53.1 文件的层次。
53.2 零件图。
53.3 产品设计规范。
63.4 实验要求/顺序。
63.4.1 样品，试验类型及专用试验。
63.4.2 实验要求/顺序说明。
63.4.3 性能和耐久性实验说明. 。
63.4.4 开发试验。
63.4.5 验证试验 .。
6 备。
84.6 测量精确度。
84.7 测量可靠性和刻度。
94.8 试验样品性能标定。
94.9 样品的处置。
104.10 零件的耐久性。
10研究数据、分析、结论、观点和本文的其他内容仅仅是作者的产品。
无论是汽车工程师协会(SAE)还是美国汽车研究委员会(USCAR)都不会出具任何证明某些产品符合基本要求的证书，也不会对本文内容的准确性和适用性作任何介绍。
确定本文内容是否适用于自己的目的，完全是本文用户责任。
版权 2004, USCAR 美国印刷版权所有有关本文件的问题： (724) 772-8545 传真 (724)776-0243要订购文件： (724) 776-4970 传真 (724) 776-0790SAE/USCAR-2 第五修订版修订日期：2007-11汽车电器连接器系统的性能标准5.试验及验收要求。
105.1 总则。
105.1.1 性能要求。
105.1.2 尺寸特性。
105.1.3 材料特性。
115.1.4 分类等级。
115.1.5 试验端板和直接连接部件。
125.1.6 端子样品准备。
135.1.7 连接器和/或端子循环。
145.1.8 目测检查。
145.1.9 电路连贯性监控。
155.2 端子机械性能试验。
185.2.1 端子至端子的啮合/分离力。
185.2.2 端子抗弯力。
2SD882;中文规格书,Datasheet资料
October 2007Rev 31/82SD882NPN medium power transistorFeatures■High current■Low saturation voltage ■Complement to 2SB772Applications■Voltage regulation ■Relay driver ■Generic switch ■Audio power amplifier ■DC-DC converterDescriptionThe device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772.Table 1.Device summaryOrder code Marking Package Packing 2SD882D882SOT -32T ubeAbsolute maximum ratings2SD882 1 Absolute maximum ratingsTable 2.Absolute maximum ratingSymbol Parameter Value UnitV CBO Collector-base voltage (I E = 0) 60VV CEO Collector-emitter voltage (I B = 0) 30VV EBO Collector-base voltage (I C = 0) 5VI C Collector current3AI CM Collector peak current (t P < 5ms)6AI B Base current1AI BM Base peak current (t P < 5ms)2AP TOT T otal dissipation at T c = 25°C12.5WT STG Storage temperature-65 to 150°CT J Max. operating junction temperature150°CTable 3.Thermal dataSymbol Parameter Value UnitR thJ-case Thermal resistance junction-case max10°C/W 2/83/82 Electrical characteristics(T CASE = 25°C; unless otherwise specified)Table 4.Electrical characteristicsSymbol ParameterTest conditions Min.Typ.Max.Unit I CES Collector cut-off current(V BE = 0)V CE = 60 V 10µA I CEO Collector cut-off current (I B = 0)V CE = 30 V 100µA I EBOEmitter cut-off current (I C = 0)V EB = 5 V10µAV (BR)CEO(1)Collector-emitter breakdownvoltage (I B = 0 )I C = 10 mA 30VV (BR)CBO Collector-base breakdownvoltage(I E = 0 )I C = 100 µA60VV (BR)EBO Emitter-base breakdownvoltage(I C = 0 )I E = 100 µA5V V CE(sat)(1)Collector-emitter saturationvoltageI C = 1 A I B = 50 mAI C = 2 A I B = 100 mAI C = 3 A I B = 150 mA 0.40.71.1V V V V BE(sat)(1)1.Pulsed duration = 300 ms, duty cycle ≤1.5%.Base-emitter saturation voltage I C = 2 A I B = 100 mA 1.2Vh FE DC current gain I C = 100 mA V CE = 2 V I C = 1 A V CE = 2 V I C = 3 A V CE = 2 V 1008030300f TTransition frequencyI C = 0.1 A V CE = 10 V100MHzcharacteristics (curves) 2.1 Typical4/82SD882Package mechanical data 3 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK®packages. These packages have a Lead-free second level interconnect . The category ofsecond level interconnect is marked on the package and on the inner box label, incompliance with JEDEC Standard JESD97. The maximum ratings related to solderingconditions are also marked on the inner box label. ECOPACK is an ST trademark.ECOPACK specifications are available at: 5/8Package mechanical data2SD8826/82SD882Revision history7/84 Revision historyTable 5.Document revision historyDate RevisionChanges09-Sep-20052Final datasheet. New template 02-Oct-20073Updated mechanical data2SD8828/8Please Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNLESS O THERWISE SET FO RTH IN ST’S TERMS AND CO NDITIO NS O F SALE ST DISCLAIMS ANY EXPRESS O R IMPLIED WARRANTY WITH RESPECT TO THE USE AND/O R SALE O F ST PRO DUCTS INCLUDING WITHO UT LIMITATIO N IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPRO VED IN WRITING BY AN AUTHO RIZED ST REPRESENTATIVE, ST PRO DUCTS ARE NO T RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.© 2007 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America分销商库存信息: STM2SD882。
自定义2直播源(朝韩)
CMC,rtmp://:1935/etv1sb/phd1
MTN,rtmp://:1935/etv1sb/phd18
RTN,rtmp://:1935/etv1sb/phd19
JES英语,http://123.108.164.71/etv2sb/pld15/lihattv.m3u8
C'TIME,http://123.108.164.71/etv2sb/pld21/lihattv.m3u8
SEN,http://123.108.164.71/etv2sb/phd22/lihattv.m3u8
娱乐钓鱼,rtmp://:1935/etv2sb/phd13
JTBC FOX体育,rtmp://:1935/etv1/phd197#rtmp://123.108.164.112/etv1/phd197
象棋,rtmp://:1935/etv1sb/phd381
amcTV,rtmp://:1935/etv2/phd873
TRENDY,http://123.108.164.71/etv2sb/phd4/playlist.m3u8
TRENDY,http://123.108.164.71/etv2sb/pld4/lihattv.m3u8
TVN,http://121.156.62.136:1935/chc09/s5.stream/playlist.m3u8
PBC,rtmp://49.1.248.21:1935/live/mp4:tv
FAILARMY,/channels/failarmytv/mid.m3u8EBS1,rtmp://ebsonair.ebs.co.kr/groundwavefam://123.108.164.71/etv2sb/phd43/playlist.m3u8
常用三极管参数表2SD系列
硅NPN三极管,音频功率放大
40
5
200
200
40M
14
3DD159B
2SD772B
硅NPN三极管,音频功率放大
40
5
250
250
40M
14
3DD159B
2SD773
硅NPN三极管,音频放大
1
2
20
16
110M
100-600
3DK30A
2SD774
硅NPN三极管,音频放大
1
1
100
50
硅NPN,达林顿管，音频功率放大,配对管2SB751
40
4
60
60
1000-10000
2SD838
硅NPN三极管,大尺寸电视机行输出管
50
3
2500
900
3-15
2SD839
硅NPN三极管
30
4
35
3DD64B
2SD840
硅NPN三极管
40
5
70
3DD64C
2SD841
停产
40
3
800
4M
3DK306G
95-560
3DK204B
2SD827K
硅NPN三极管
80
4
500
3DK308C
2SD829K
硅NPN三极管
100
15
150
3DK108E
2SD830
硅NPN三极管
30
150
2SD833
硅NPN三极管,大功率达林顿管，功率放大
40
7
60
60
4000
Balluff BIS C系列产品说明书
Supply voltage Current consumption Operating temperature range
24V DC±10% 0.35...0.75A（Depends on the number of connectable antenna） 0...+55℃
Connection to ID converter Connection to Host PLC
3 directions variable
41
Product specification Basicsystem ／ BIS Cseries
Number of connectable antenna Interface Dimension
Processor SerialInterface
1CH (Built in converter) Serial / USB
Remarks
Please request the instruction manual for details about specifications.
Applicable OS：Microsoft Windows2000 and XP Included:Driver CD、USB cable
42
Product specification Basicsystem ／ BIS Cseries
Number of connectable antenna Interface Dimension
Processor SerialInterface
1CH Serial / RS-232C
Interface
38
1CH (Built-in converter) Serial / RS-232C
英语九年级Unit 11 Sad movies make me cry.[ B 2]
![英语九年级Unit 11 Sad movies make me cry.[ B 2]](https://img.taocdn.com/s3/m/411e2949571252d380eb6294dd88d0d232d43c4a.png)
Read Para. 2 - Para. 5 and answer the questions.
1. What kind of advice did Peter’s father offer him? Peter’s father advised him not to be too hard on himself but to learn how to communicate with his teammates and learn from his mistake.
Look at the title and the picture. Then answer the questions below.
The Winning Team
1. What can you see in the picture? A soccer ball team.
2.What does the passage may talk about? It may talk about the soccer ball team’s winning.
1. Larry often gives his little sister a ride 2. on hissh_o_u_ld_e_r_s___. 2. I don't want to go out now, and
2 Read the story and number the b events in the corre队ct友or;同de队r.队员.n __2__ Peter got home and went into his room. __4__ Peter talked to his teammates.
let sb. down 使某人失望 kick sb. off 开除某人
2SB系列晶体管参数
结构 PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
松下 松下 松下 松下 日立 松下 松下 松下 松下 日电
日电 日电 日电 日电 日电 日电 日电 三洋 日电 日电 三洋 三洋 三洋 松下 罗姆 罗姆 三洋 三洋 三洋 三洋 日立 东芝 东芝 松下 日电 日电 富士电机 富士电机 罗姆 罗姆 日立 日立 日立 日立 日立 日立 富士电机 东芝 三洋 松下 松下 松下 日立 三洋
vcbo(V) -60 -50 -110 -60 -60 -35 -130 -130 -25 -200 -200 -100 -100 -100 -220 -70 -180 -20 -100 -25 -25 -30 -70 -70 -100 -80 -25 -100 -500 -60 -30 -60 -30 -100 -120 -25 -35 -100 -50 -100 -100 -60 -30 -60 -120 -120 -120 -120 -180 -180 -180 -180 -100
2SB1079中文资料
2SB1079Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SD1559 Outline2SB10792Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Collector to base voltage V CBO –100V Collector to emitter voltage V CEO –100V Emitter to base voltage V EBO –7V Collector current I C –20A Collector peak current I C(peak)–30A Base currentI B –3A Collector power dissipation P C *1100W Junction temperature Tj 150°C Storage temperature Tstg–55 to +150°CNote:1.Value at T C = 25°C.Electrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test conditions Collector to base breakdown voltageV (BR)CBO–100——V I C = –0.1 mA, I E = 0Collector to emitter breakdown voltageV (BRCEO –100——V I C = –25 mA, R BE = ∞Collector to emitter sustain voltageV CEO(sus)–100——V I C = –200 mA, R BE = ∞*1Emitter to base breakdown voltageV (BR)EBO –7——V I E = –50 mA, I C = 0Collector cutoff current I CBO ——–100µA V CB = –100 V, I E = 0I CEO ——–1.0mAV CE = –80 V, R BE = ∞DC current transfer ratio h FE 1000—20000V CE = –3 V, I C = –10 A*1Collector to emitter saturation voltageV CE(sat)1——–2.0V I C = –10 A, I B = –20 mA*1Base to emitter saturation voltageV BE(sat)1——–2.5V Collector to emitter saturation voltageV CE(sat)2——–3.0V I C = –20 A, I B = –200 mA*1Base to emitter saturation voltage V BE(sat)2——–3.5V Turn on time t on —0.6—µs I C = –10 A, I B1 = –I B2 = –20 mA Storage time t stg—3.5—µsNote:1.Pulse Test.2SB107932SB10794Hitachi CodeJEDECEIAJWeight (reference value)TO-3P—Conforms5.0 gUnit: mmCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。
2SD424中文资料
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SD424
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.1A ;IB=0
PINNING(see Fig.2) PIN 1 2 3 Base Emittum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER
体 TOR 半导 NDU 固电 ICO E SEM ANG INCH
Collector
Fig.1 simplified outline (TO-3) and symbol
UNIT V V V A A W ℃ ℃
元器件交易网
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD424
体 TOR 半导 NDU 固电 ICO E SEM ANG INCH
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
CONDITIONS VALUE 180 Collector-base voltage Open emitter Collector-emitter voltage Open base 180 5 15 1.5 TC=25℃ 150 150 -55~150 Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector
ES2D中文资料(diotec)中文数据手册「EasyDatasheet - 矽搜」
标准Lieferform gegurtet AUF罗尔
2A 50...600 V
~ SMB ~ DO-214AA
0.1 g
最大额定值 类型
Typ
ES2A ES2B ES2C ES2D ES2F ES2G ES2J
重复峰值反向电压
Periodische Spitzensperrspannung V [V] 50 100 150 200 300 400 600
V =V
I
T = 100°C V = V
I
热阻结到环境空气
WärmewiderstandSperrschicht - umgebende拉夫特
R
)
热阻结到终端
R
WärmewiderstandSperrschicht - 德奥合并
120 [%]
100
80
60
40
20
I
0
0 T 50
100
150 [°C]
芯片中文手册,看全文,戳
ES2A ... ES2J
ES2A ... ES2J
超快高效表面贴装整流二极管
Superschnelle Hocheffizienz-Gleichrichterdioden献给死去Oberflächenmontage
版本2013年12月16号
5.4
2.2
2.1
额定正向电流与温度.端子 祖尔. Richtstrom在ABH.诉Ð.温度.德码头
10 [A]
ES2A...D
1
0.1
ES2F...G ES2J
10
I
10 V
T = 25°C
[V]
正向特性（典型值）
2SK2485中文资料
Rth(ch-c) = 1.25(˚C/W) 1
0.1
0.01
0.001 10 µ
100 µ
1m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse Tc = 25 ˚C
10
100 1 000
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100
ID (pulse) ±12
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
100
W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
1 000
100
1.0
0.1
1.0
10
100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
ISD - Diode Forward Current - A
CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
yb_849标准的替代标准_概述说明以及解释
yb 849标准的替代标准概述说明以及解释1. 引言1.1 概述本文旨在对yb 849标准的替代标准进行概述、说明和解释。
yb 849标准是某个领域中被广泛采用的标准，但由于一些原因需要被其他标准替代。
本文将探讨替代yb 849标准的相关概念、原因以及实施过程中可能面临的挑战与解决方案。
1.2 文章结构文章主要分为以下几个部分进行论述：引言、yb 849标准的替代标准概述、替代标准的说明和解释、实施替代yb 849标准的挑战与解决方案、结论与建议。
每个部分都将对相应内容进行详细讲解和分析，以便读者全面了解该主题。
1.3 目的本文旨在帮助读者深入理解yb 849标准的替代问题，并通过概述、说明和解释不同方面来提供有关该主题更多的信息和洞察力。
同时，还将针对实施替代过程中可能遇到的挑战提出一些建议和解决方案，以帮助读者更好地应对这些困扰因素。
通过本文的阅读，读者将能够了解到yb 849标准的基本情况、替代标准的定义和作用，以及为什么需要替代yb 849标准。
此外，还将详细介绍替代标准的适用范围与限制条件，比较不同标准之间的差异和相似之处，并评估替代过程对业务的影响和变化。
最后，我们将讨论实施替代yb 849标准时可能面临的挑战，并提出一些解决方案和应对策略。
通过全面了解yb 849标准的替代问题，读者可以更好地应对相关领域中遇到的技术难题，并在实际操作中选择合适的替代方案。
希望本文能为读者提供有价值的见解和指导，使其在相关领域取得更好的发展与进步。
2. yb 849标准的替代标准概述2.1 yb 849标准简介yb 849标准是指某个特定领域中的规范化文件，通常用于指导和确保相关产品或服务的质量和性能符合一定的要求。
yb 849标准在该领域内被广泛采用，被视为行业内的权威标准，并且已经在该领域中得到了长期有效的应用。
2.2 替代标准的定义和作用替代标准是指与yb 849标准具有相似目的和功能的其他规范化文件。
bs8491试验方法
bs8491试验方法（原创版4篇）目录（篇1）1.试验方法概述2.试验设备与材料3.试验步骤4.试验结果处理5.试验报告正文（篇1）一、试验方法概述BS8491 试验方法是一种针对某种特定产品或材料进行性能测试的标准方法。
它详细描述了进行试验所需的步骤、设备和材料，以及如何处理试验结果。
通过遵循这一标准方法，可以确保试验的准确性和可重复性，从而为产品研发、质量控制和性能评估提供可靠的数据支持。
二、试验设备与材料1.设备：根据试验方法的具体要求，需要准备相应的试验设备，如万能试验机、恒温恒湿箱、电子天平等。
2.材料：试验材料包括待测产品或材料、试验用辅助材料（如夹具、试样等）以及试验用试剂（如溶液、气体等）。
三、试验步骤1.样品准备：根据试验方法的要求，从待测产品或材料中取样，并进行处理，如清洗、烘干等。
2.设备准备：检查试验设备是否完好，并进行校准，确保设备符合试验要求。
3.试验操作：按照试验方法的步骤进行试验，记录试验过程中的关键参数和观察到的现象。
4.数据记录：将试验结果记录在试验报告中，包括试验数据、观察到的现象以及可能的影响因素。
四、试验结果处理1.数据分析：对试验结果进行分析，计算相关性能指标，如强度、硬度、耐腐蚀性等。
2.结果评价：根据试验结果和相关标准或要求，评价产品或材料的性能。
3.报告编制：编写试验报告，包括试验目的、试验方法、试验结果和评价等内容。
五、试验报告试验报告应详细记录试验过程、结果和评价，以便于相关人员查阅和理解。
报告应包括以下内容：1.试验目的和背景2.试验方法的概述和具体步骤3.试验设备和材料的清单4.试验结果和数据分析5.试验结果评价和结论6.报告编制人员和日期通过以上步骤，可以完成 BS8491 试验方法的实施和试验报告的编制。
目录（篇2）1.试验方法概述2.试验方法的步骤3.试验方法的注意事项4.试验结果的评估正文（篇2）一、试验方法概述BS8491 试验方法是一种用于测试某种产品或物质性能的实验方法。
斯巴拓SBT904D2手持操作说明书(二通道232 485变送器)
SBT904D2变送器使用说明V3.0使用本产品前请认真阅读本说明书，在理解内容的基础上正确使用并妥善保存，以便需要时参考。
SBT904D2变送器在同等价位的产品中，速度更快，可达1280次/秒，2路独立通道，同时具有TEDS功能。
1.技术规格基本规格供电电压DC：10V--30V输入灵敏度0.4mV/V~6mV/V传感器激励电压5VDC±2%，100mAA/D性能24位，Delta-Sigma方法显示精度1/10000输出速率10 、40、640、1280次/秒工作温度-30℃~ 60℃耐电压在2000V AC50/60Hz下1分钟周围环境温度：-10~55℃；存储-25~65℃湿度：35~85%RH；存储35~85%RH串口通信RS232或RS485二选一（自由协议、Modbus RTU和ASCII协议）2.安装外形尺寸（导轨式安装）3074101112293. 配线3.1端子构成+ 电源电压+ EXC+ 传感器激励电压+- 电源电压- EXC- 传感器激励电压-A 接上位机A SIG+ 传感器信号+B 接上位机B SIG- 传感器信号-NC 空✂接屏蔽线+ 电源电压+ EXC+ 传感器激励电压+- 电源电压- EXC- 传感器激励电压-Txd 接上位机Rxd SIG+ 传感器信号+Rxd 接上位机Txd SIG- 传感器信号-Gnd 接上位机Gnd ✂接屏蔽线ZERO：按住1S以上置零（8个通道同时置零）USB端口：接手持表注意：当使用六线制传感器时，应将传感器的EX+与SN+短接后接至变送器EXC+端口；EX-与SN-短接至变送器EXC-端口。
4.基本操作■手持终端面板及按键说明序号名称说明1 显示窗在测量状态下，可切换显示毛重、净重、峰值、谷值、峰-谷值在设置状态下，显示参数符号和数值2Net当前显示值状态指示灯，在测量状态下，按键切换显示：显示总值： Net、Peak、Valley三个灯全灭显示净值： Net灯亮显示峰值： Peak灯亮显示谷值： Valley灯亮显示峰-谷值： Peak和Valley灯亮PeakValleyMot 当前数值不稳定Ch1-Ch4变送器为2个通道，在测量状态下，通过按▼切换通道，通道1:CH1亮；通道2：CH2亮3SWITCH/CHN在测量状态下：切换测量值（毛重、净重、峰值、谷值、峰-谷值）在菜单界面下：可返回到上级菜单或测量状态。
BA6219B中文资料
BA6219B / BA6219BFP-Y
(1) When the output voltage control pin (pin 4) is used VR < VCC1 * (VSAT (Q1) ) VBE (Q5) ) VBE (Q6) ) VBE (Q7)) VCC1 * 2.5V VR < VCC2 * {(VSAT (Q3) * VBE (Q3) * VBE (Q2)) ) (VBE (Q5) ) VBE (Q6) ) VBE (Q7))} VCC2 * 1V
3) Built-in output voltage setting pins. 4) Small standby supply current.
398
元器件交易网 Motor driver ICs
FAbsolute maximum ratings (Ta = 25_C)
BA6219B / BA6219BFP-Y
(14) If the potential of the output pin sways greatly and goes below the potential of ground, the operation of the IC may malfunction or be adversely affected. In such a case, place a diode between the output and ground, or other measure, to prevent this.
元器件交易网 Motor driver ICs
Reversible motor driver
BA6219B / BA6219BFP-Y
The BA6219B and BA6219BFP-Y are reversible-motor drivers suitable for brush motors. Two logic inputs allow four output modes: forward, reverse, idling, and braking. The motor revolving speed can be set arbitrarily by controlling the voltage applied to the motor. FApplications VCRs and cassette tape recorders FFeatures 1) Large output current. (IO=2.2A Max.) 2) Built-in thermal shutdown circuit. FBlock diagram