27C64资料

PACKAGE TYPES
DIP/SOIC
VPP • 1 A12 2
A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 O0 11 O1 12 O2 13 VSS 14
27C64
28 VCC 27 PGM 26 NC 25 A8 24 A9 23 A11 22 OE 21 A10 20 CE 19 O7 18 O6 17 O5 16 O4 15 O3
Conditions
Input Voltages
all Logic "1"
VIH
2.0 VCC+1 V
Logic "0"
VIL
-0.5 0.8 V
Input Leakage
all
—
ILI
-10
10 µA VIN = 0 to VCC
Output Voltages
all Logic "1"
VOH
2.4
1.1 Maximum Ratings*
VCC and input voltages w.r.t. VSS ....... -0.6V to + 7.25V VPP voltage w.r.t. VSS during programming .......................................... -0.6V to +14V Voltage on A9 w.r.t. VSS ...................... -0.6V to +13.5V Output voltage w.r.t. VSS ............... -0.6V to VCC +1.0V Storage temperature .......................... -65˚C to +150˚C Ambient temp. with power applied ..... -65˚C to +125˚C
• High speed “express” programming algorithm
• Organized 8K x 8: JEDEC standard pinouts
- 28-pin Dual-in-line package
- 32-pin PLCC Package
- 28-pin SOIC package
TABLE 1-1: PIN FUNCTION TABLE
Name A0-A12
CE OE PGM VPP O0 - O7 VCC VSS NC
NU
Function
Address Inputs Chip Enable Output Enable Program Enable Programming Voltage Data Output +5V Power Supply Ground No Connection; No Internal Connections Not Used; No External Connection Is Allowed
PLCC
4 A7 3 A12 2 VPP 1 NU 32 Vcc 31 PGM 30 NC
A6 5 A5 6 A4 7 A3 8 A2 9 A1 10 A0 11 NC 12 O0 13
27C64
29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 O7 21 O6
TABLE 1-2: READ OPERATION DC CHARACTERISTICS
VCC = +5V (±10%)
Commercial: Tamb = 0˚C to +70˚C
Industrial:
Tamb = -40˚C to +85˚C
Parameter
Part* Status Symbol Min Max Units
High Z
Address Valid
tCE(2)
t OE(2) t ACC
t OFF(1,3) tOH
Valid Output
High Z
Note 1: tOFF is specified for OE or CE, whichever occurs first. 2: OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE. 3: This parameter is sampled and is not 100% tested.
*Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
O1 14 O2 15 VSS 16 NU 17 O3 18 O4 19 O5 20
© 1996 Microchip Technology Inc.
This document was created with FrameMaker 4 0 4
DS11107L-page 1
27C64
1.0 ELECTRICAL CHARACTERISTICS
A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC or SOIC packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages.
VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL = 0.8V
1 TTL Load + 100 pF
10 ns
Commercial:
Tamb = 0˚C to +70˚C
Industrial:
Tamb = -40˚C to +85˚C
Parameter
27C64-12 27C64-15 27C64-17 27C64-20 27C64-25
Sym
Units
Min Max Min Max Min Max Min Max Min Max
Conditions
Address to Output Delay tACC — 120 — 150 — 170 — 200 — 250 ns CE = OE = VIL
CE to Output Delay
—
2 mA 3 mA 100 µA CE = VCC ± 0.2V
IPP Read Current VPP Read Voltage
all Read Mode all Read Mode
IPP
100
VPP VCC-0.7 VCC
µA VPP = 5.5V V
* Parts: C=Commercial Temperature Range; I =Industrial Temperature Range. Note 1: Typical active current increases .5 mA per MHz up to operating frequency for all temperature ranges.
Output Hold from Address CE or OE, whichever occurs first
tOH 0 — 0 — 0 — 0 — 0 — ns
FIGURE 1-1: READ WAVEFORMS
VIH Address
VIL
VIH CE
VIL
VIH OE
VIL
VOH Outputs O0 - O7 VOL
- 100 µA Standby current
• Factory programming available
• Auto-insertion-compatible plastic packages
• Auto ID aids automated programming
• Separate chip enable and output enable controls
V IOH = -400 µA
Logic "0"
VOL
0.45 V IOL = 2.1 mA
Output Leakage
all
—
ILO
-10
10 µA VOUT = 0V to VCC
Input Capacitance
all
—
CIN
—
6
pF VIN = 0V; Tamb = 25°C;
f = 1 MHz
- Tape and reel
• Available for the following temperature raC to +70˚C
- Industrial:
-40˚C to +85˚C
DESCRIPTION
The Microchip Technology Inc. 27C64 is a CMOS 64K bit (electrically) Programmable Read Only Memory. The device is organized as 8K words by 8 bits (8K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 120 ns. CMOS design and processing enables this part to be used in systems where reduced power consumption and high reliability are requirements.
tCE — 120 — 150 — 170 — 200 — 250 ns OE = VIL
OE to Output Delay
tOE — 65 — 70 — 70 — 75 — 100 ns CE = VIL
CE or OE to O/P High Impedance
tOFF 0 50 0 50 0 50 0 55 0 60 ns
DS11107L-page 2
© 1996 Microchip Technology Inc.
27C64
TABLE 1-3: READ OPERATION AC CHARACTERISTICS
AC Testing Waveform: Output Load: Input Rise and Fall Times: Ambient Temperature:
27C64
64K (8K x 8) CMOS EPROM
FEATURES
• High speed performance
- 120 ns access time available
• CMOS Technology for low power consumption
- 20 mA Active current
25 mA f = 1 MHz; OE = CE = VIL;
IOUT = 0 mA; VIL = -0.1 to 0.8V;
VIH = 2.0 to VCC; Note 1
Power Supply Current, Standby
C
TTL input ICC(S)
—
I
TTL input
—
—
all CMOS input —
Output Capacitance
all
—
COUT
—
12 pF VOUT = 0V; Tamb = 25°C;
f = 1 MHz
Power Supply Current,
C
TTL input
ICC1
—
20 mA VCC = 5.5V; VPP = VCC;
Active
I
TTL input
ICC2
—